Gluing and developing equipment with double sheet conveying paths

Abstract

The invention discloses gluing and developing equipment with double sheet conveying paths. The gluing and developing equipment comprises at least two layers of sheet feeding liquid treatment frames and at least two layers of sheet returning liquid treatment frames, at least two layers of feeding heat treatment frames and at least two layers of returning heat treatment frames; the sheet feeding heat treatment frame is arranged corresponding to the sheet feeding liquid treatment frame; the heat treatment module is used for performing a heat treatment process on the wafer; the interface module is connected with the heat treatment module and is used for transferring the wafer fed into the heat treatment frame to the wafer heat treatment frame; the wafers subjected to the surface coating process in at least one layer of wafer feeding liquid treatment frame enter the corresponding wafer feeding heat treatment frame to be subjected to the heat treatment process; after processing is completed, the interface module is entered; and after passing through the interface module, the wafer enters any wafer returning heat treatment frame for a heat treatment process, and enters the corresponding wafer returning liquid treatment frame for a developing treatment process, so that at least two wafer conveying paths are formed. According to the invention, the wafer transfer efficiency can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a dual-path coating and developing apparatus. Background Technology

[0002] In existing coating and developing equipment, the liquid processing unit and the heat treatment unit are located in the same module, with the heat treatment module operating at a higher temperature than the liquid processing module. A single robotic arm must retrieve wafers for both liquid processing and heat treatment, potentially impacting the liquid processing results, such as affecting the film thickness on the wafer surface and leading to a decrease in wafer yield. Furthermore, both the heat treatment and liquid processing modules are arranged in three rows. Single-wafer transfer operations by the robotic arm will affect its throughput.

[0003] Therefore, it is necessary to provide a new dual-path coating and developing device to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0004] The technical problem to be solved by this application is how to provide a dual-path coating and developing device that can improve wafer transfer efficiency.

[0005] To solve the above-mentioned technical problems, according to an embodiment of this application, a dual-path coating and developing apparatus is provided, comprising: The liquid processing module includes at least two layers of wafer entry liquid processing frames and at least two layers of wafer return liquid processing frames; the wafer entry liquid processing frames are used for surface coating processes on the wafers, and the wafer return liquid processing frames are used for developing processes on the wafers. A heat treatment module includes at least two layers of wafer entry heat treatment frames and at least two layers of wafer return heat treatment frames; the wafer entry heat treatment frames are configured corresponding to the wafer entry liquid treatment frames, and the wafer return heat treatment frames are configured corresponding to the wafer return liquid treatment frames; the heat treatment module is used to perform heat treatment processes on wafers. An interface module, connected to the heat treatment module, is used to transfer the wafer from the wafer-to-wafer heat treatment frame to the wafer heat treatment frame. In this process, wafers undergoing surface coating within at least one of the wafer loading solution treatment frames are fed into the corresponding wafer loading heat treatment frame for heat treatment; after heat treatment, they are fed into the interface module; after passing through the interface module, they are fed into any of the return wafer heat treatment frames for heat treatment, and then into the corresponding return wafer loading solution treatment frame for development, thus forming at least two wafer transfer paths.

[0006] According to an embodiment of this application, the interface module includes a first transfer cavity, a second transfer cavity, and a third transfer cavity; the first transfer cavity is provided with a forward washing unit, the second transfer cavity is provided with a back washing unit, and the third transfer cavity is provided with a pre-lithography cooling unit; the back washing unit is connected to the wafer entry heat treatment frame; the forward washing unit is connected to the wafer return heat treatment frame; so that the wafer passes through the back washing unit, the pre-lithography cooling unit, and the forward washing unit in sequence within the interface module before entering any of the wafer return heat treatment frames.

[0007] According to an embodiment of this application, the interface module further includes an edge exposure unit, a first wall-penetrating unit, a second wall-penetrating unit, and a third wall-penetrating unit; The edge exposure unit is disposed on the wafer loading heat treatment frame, and the wafer loading heat treatment frame is connected to the first transfer cavity; The first through-wall unit is located in the first transfer cavity and connects the first transfer cavity with the second transfer cavity so that the wafer of the wafer loading heat treatment frame enters the back washing unit after passing through the edge exposure unit and the first through-wall unit. The second through-wall unit is located in the first transfer cavity, connecting the first transfer cavity and the second transfer cavity, so as to transfer the wafer from the back washing unit to the photolithography pre-cooling unit; The third through-wall unit is located in the first transfer cavity and connects the return heat treatment frame to the first transfer cavity, so that the wafer of the forward washing unit enters the return heat treatment frame through the third through-wall unit.

[0008] According to an embodiment of this application, the interface module further includes a first transfer robot, a second transfer robot, and a third transfer robot; the first transfer robot is disposed in the first transfer cavity to drive the wafer within the first transfer cavity to move; the second transfer robot is disposed in the second transfer cavity to drive the wafer within the second transfer cavity to move; and the third transfer robot is disposed in the third transfer cavity to drive the wafer within the third transfer cavity to move.

[0009] According to an embodiment of this application, it further includes an interlayer process module and a wafer cassette module that are interconnected; the interlayer process module includes a wafer loading port and a wafer return loading port; the wafer loading port is connected to the wafer loading solution frame to transfer the wafer from the wafer cassette module to the wafer loading solution frame; the wafer return loading port is connected to the wafer return solution frame to transfer the wafer from the wafer return solution frame to the wafer cassette module.

[0010] According to an embodiment of this application, the interlayer process module further includes a cooling unit; the cooling unit is located in the wafer transfer path and is used to cool the wafer when in contact with it.

[0011] According to an embodiment of this application, the wafer loading solution treatment frame includes a first coating section and a second coating section arranged sequentially in a vertical direction; the first coating section is connected to the wafer loading port; and the second coating section is connected to the cooling unit. The wafer feeding heat treatment frame includes a first baking section and a second baking section arranged sequentially in a vertical direction; one end of the first baking section is connected to the first coating section, and the other end is connected to the cooling unit; one end of the second baking section is connected to the second coating section, and the other end is connected to the back washing unit; so that the wafer passes through the first coating section, the first baking section, the cooling unit, the second coating section, and the second baking section in sequence before entering the back washing unit.

[0012] According to an embodiment of this application, the film return solution processing frame includes two developing units arranged sequentially in a vertical direction; the film return solution processing frame is connected to the cooling unit; The wafer return heat treatment frame includes a third baking section and a fourth baking section arranged sequentially in a vertical direction; one end of the third baking section is connected to the forward washing unit, and the other end is connected to the cooling unit; one end of the fourth baking section is connected to the wafer return liquid treatment frame, and the other end is connected to the wafer return loading port; so that the wafer passes through the forward washing unit, then sequentially passes through the third baking section, the cooling unit, any one of the developing units, and the fourth baking section, and enters the wafer return loading port.

[0013] According to embodiments of this application, the wafer transfer path also includes a plurality of transfer robots; each transfer path corresponds to at least two transfer robots; one of the transfer robots is used to transfer the wafer from the wafer entry liquid treatment frame to the wafer entry heat treatment frame; the other transfer robot is used to transfer the wafer from the return heat treatment frame to the return liquid treatment frame.

[0014] According to an embodiment of this application, the combined height of the liquid treatment module and the heat treatment module is less than 3.5 meters.

[0015] By adopting the above technical solution to form a dual-path wafer transfer system, wafer transfer efficiency can be improved. Even if one transfer path fails, the remaining paths can still be used, ensuring uninterrupted wafer transfer. In existing technologies, the entire equipment uses a serial transfer route; a malfunction in a single robot within a process module can cause the entire system to crash, making the reliability of the entire equipment highly dependent on the stability of the robotic arms. The dual-path setup significantly improves wafer transfer efficiency. Furthermore, placing the back-wash unit in the second transfer chamber and the forward-wash unit in the first transfer chamber brings the forward-wash unit closer to the return heat treatment frame. Wafers that have completed the back-wash process in the back-wash unit are collected in a temporary storage unit, and then pass through the temporary storage unit and the pre-lithography cooling unit before entering the forward-wash unit. This shortens the wafer transfer path and further improves wafer transfer efficiency. Meanwhile, the overall height of the coating and developing equipment is less than 3.5m. Based on the traditional six-layer film transfer method, it expands to an eight-layer film transfer method (the first coating section and the first baking section form one layer, the second coating section and the second baking section form one layer, the third baking section and the corresponding developing unit form one layer, and the fourth baking section and the corresponding developing unit form one layer, i.e., the liquid treatment module and the heat treatment module together form eight layers of film transfer), and two film transfer paths. This increases the number of film transfer paths without increasing the equipment height, thereby improving the conveying capacity of the robotic arm. Furthermore, the capacity of the existing six-layer duplex symmetrical architecture is limited by the number of robotic arms and process units, and its capacity has consistently failed to exceed 300WPH. By improving it to an eight-layer duplex symmetrical architecture, a capacity exceeding 300WPH is achieved without increasing the equipment height. Attached Figure Description

[0016] Figure 1 This is a top view of a dual-path coating and developing apparatus according to an embodiment of the present invention; Figure 2 This is a cross-sectional view of a dual-path coating and developing apparatus according to an embodiment of the present invention. Figure 3 This is a schematic diagram of the film transfer path of a dual-path coating and developing device according to an embodiment of the present invention; Figure 4 This is a cross-sectional view of the structure of a liquid treatment module in a dual-path coating and developing equipment according to an embodiment of the present invention. Figure 5 This is a cross-sectional view of the structure of a heat treatment module of a dual-path coating and developing device according to an embodiment of the present invention.

[0017] Figure label: 100. Liquid treatment module; 110. Wafer loading liquid treatment frame; 120. Wafer return liquid treatment frame; 200. Heat treatment module; 210. Wafer loading heat treatment frame; 220. Wafer return heat treatment frame; 310. First transfer chamber; 320. Second transfer chamber; 330. First transfer robot; 340. Second transfer robot; 350. Third transfer chamber; 400. Interlayer process module; 500. Wafer cassette module; 600. Transfer robot. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0019] The following is in conjunction with the appendix Figures 1-5 The specific embodiments of the present invention will be further described in detail below.

[0020] Embodiments of the present invention provide a dual-path coating and developing apparatus, comprising: The liquid processing module 100 includes at least two layers of wafer entry liquid processing frame 110 and at least two layers of wafer return liquid processing frame 120; the wafer entry liquid processing frame 110 is used for surface coating process of wafer, and the wafer return liquid processing frame 120 is used for developing process of wafer. The heat treatment module 200 includes at least two layers of wafer entry heat treatment frame 210 and at least two layers of wafer return heat treatment frame 220; the wafer entry heat treatment frame 210 is set to correspond to the wafer entry liquid treatment frame 110, and the wafer return heat treatment frame 220 is set to correspond to the wafer return liquid treatment frame 120; the heat treatment module 200 is used to perform heat treatment processes on the wafer. An interface module, connected to the heat treatment module 200, is used to transfer the wafer from the wafer-to-wafer heat treatment frame 210 to the wafer heat treatment frame. In this process, wafers undergoing surface coating within at least one wafer loading solution treatment frame 110 are fed into the corresponding wafer loading heat treatment frame 210 for heat treatment; after processing, they enter the interface module; after passing through the interface module, they enter any return wafer heat treatment frame 220 for heat treatment, and then enter the corresponding return wafer processing solution frame 120 for development processing, thus forming at least two wafer transfer paths.

[0021] In some embodiments, the liquid treatment module 100, the heat treatment module 200, and the interface module are arranged sequentially in a horizontal direction, so that the wafer can pass through the liquid treatment module 100, the heat treatment module 200, and the interface module in sequence, and then enter the heat treatment module 200 and the liquid treatment module 100 in sequence from the interface module.

[0022] In some specific embodiments, the liquid treatment module 100 includes at least two layers of wafer entry liquid treatment frames 110 and at least two layers of wafer return liquid treatment frames 120; taking two layers of both wafer entry liquid treatment frames 110 and wafer return liquid treatment frames 120 as an example, the two layers of wafer entry liquid treatment frames 110 are arranged side by side in a vertical direction, the two layers of wafer return liquid treatment frames 120 are arranged side by side in a vertical direction, and the two layers of wafer return liquid treatment frames 120 are positioned above the two layers of wafer entry liquid treatment frames 110. The heat treatment module 200 includes at least two layers of wafer entry heat treatment frames 210 and at least two layers of wafer return heat treatment frames 220; taking two layers of both wafer entry heat treatment frames 210 and wafer return heat treatment frames 220 as an example, the two layers of wafer entry heat treatment frames 210 are arranged side by side in a vertical direction, the two layers of wafer return heat treatment frames 220 are arranged side by side in a vertical direction, and the two layers of wafer return heat treatment frames 220 are positioned above the two layers of wafer entry heat treatment frames 210. During wafer movement, the wafer travel path consists of the wafer entry solution treatment frame 110, the wafer entry heat treatment frame 210, the interface module, the return heat treatment frame 220, and the return solution treatment frame 120. The wafer can undergo surface coating within any layer of the wafer entry solution treatment frame 110, then proceed to the corresponding wafer entry heat treatment frame 210 for heat treatment; after heat treatment, it enters the interface module; via the interface module, it enters any layer of the return heat treatment frame 220 for heat treatment, and finally enters the corresponding return solution treatment frame 120 for development, thus forming at least two wafer transfer paths. This results in at least two wafer entry paths and at least two wafer exit paths. Therefore, if one wafer entry path is damaged, the other wafer entry path can still operate; similarly, if one wafer exit path is damaged, the other wafer exit path can still operate, ensuring uninterrupted wafer processing and improving wafer processing efficiency.

[0023] In some embodiments, the dual-path coating and developing apparatus further includes an interlayer process module 400 and a wafer cassette module 500 connected to each other. The wafer cassette module 500 provides wafers and also receives wafers. The interlayer process module 400 connects the wafer cassette module 500 and the liquid processing module 100 to facilitate the transfer of wafers from the wafer cassette module 500 to the liquid processing module 100 for processing, or the transfer of processed wafers to the wafer cassette module 500. Specifically, the interlayer process module 400 includes an infeed loading port and a return loading port. The infeed loading port is connected to the infeed liquid processing frame 110 to transfer wafers from the wafer cassette module 500 to the infeed liquid processing frame 110; the return loading port is connected to the return liquid processing frame 120 to transfer wafers from the return liquid processing frame 120 to the wafer cassette module 500. More specifically, the wafer cassette module 500 is equipped with a wafer cassette robot, and the interlayer process module 400 is equipped with an interlayer robot. The wafer cassette robot is used to transfer wafers from the wafer cassette module 500 to the interlayer process module 400. The interlayer robot is used to transfer wafers from the interlayer process module 400 to the wafer loading port into the wafer loading liquid treatment frame 110. Simultaneously, the interlayer robot can also transfer wafers from the return wafer loading frame 120 to the interlayer process module 400 through the return wafer loading port, where they are picked up by the wafer cassette robot to complete the processing. In some specific embodiments, the wafer loading port can be understood as an opening located on the side wall of the liquid treatment module 100 and corresponding to the position of the wafer loading liquid treatment frame 110; the return wafer loading port can be understood as an opening located on the side wall of the liquid treatment module 100 and corresponding to the position of the return wafer loading liquid treatment frame 120.

[0024] In some embodiments, the interlayer process module 400 further includes a cooling unit SCPC; the cooling unit SCPC is a cooling pad; the cooling unit SCPC is located in the wafer transfer path, that is, in both the wafer entry path and the wafer exit path, as detailed later. The cooling unit SCPC is used to cool the wafer when in contact with it, to remove the heat generated by the wafer, and to prevent the wafer from carrying residual heat during liquid processing after heat treatment. Specifically, the cooling pad is connected to a heat sink (not shown in the figure), and the heat sink and the cooling pad have interconnected cooling paths (not shown in the figure); a cooling medium is provided in the cooling path. More specifically, the cooling medium is a coolant. In some examples, the coolant is pure water. In this embodiment, the heat sink increases the heat dissipation area of ​​the cooling pad, which helps to accelerate heat dissipation, and the circulation of the cooling medium further improves the heat dissipation effect of the cooling pad on the wafer.

[0025] In some embodiments, the wafer loading solution treatment frame 110 includes a first coating section SCB and a second coating section COT arranged sequentially in a vertical direction; the first coating section SCB is connected to the wafer loading port; the second coating section COT is connected to the cooling unit SCPC; specifically, a cooling element TCP is provided at the wafer loading port, and the wafer enters the first coating section SCB after being cooled by the cooling element TCP. The wafer loading heat treatment frame 210 includes a first baking section BHTB and a second baking section HLTB arranged sequentially in a vertical direction; one end of the first baking section BHTB is connected to the first coating section SCB, and the other end is connected to the cooling unit SCPC; one end of the second baking section HLTB is connected to the second coating section COT, and the other end is connected to the back wash unit BS; so that the wafer enters the back wash unit BS after sequentially passing through the first coating section SCB, the first baking section BHTB, the cooling unit SCPC, the second coating section COT, and the second baking section HLTB, forming a wafer loading path. Before entering the interface module, the wafer is first cooled by the cooling unit TCP, then cooled by the first coating unit SCB and the first baking unit BHTB, and then cooled by the cooling unit SCPC. After cooling, it passes through the second coating unit COT and the second baking unit HLTB and enters the back wash unit BS.

[0026] In some specific embodiments, the first coating unit SCB is used to spin-coat an anti-reflective layer onto the bottom of the wafer; the second coating unit COT is used to spin-coat photoresist onto the top of the wafer. The first baking unit BHTB is used to bake the wafer with the anti-reflective layer spin-coated by the anti-reflective unit SCB; the second baking unit HLTB is used to bake the wafer with the photoresist spin-coated by the coating unit COT.

[0027] In some embodiments, the return solution processing frame 120 includes two developing units (DEVs) arranged vertically in sequence; the return solution processing frame 120 is also connected to a cooling unit (SCPC); the return heat treatment frame 220 includes a third baking section (HAEB) and a fourth baking section (DLTB) arranged vertically in sequence; one end of the third baking section (HAEB) is connected to the forward washing unit (PIS), and the other end is connected to the cooling unit (SCPC); one end of the fourth baking section (DLTB) is connected to the return solution processing frame 120, and the other end is connected to the return loading port; so that after the wafer passes through the forward washing unit (PIS), it sequentially passes through the third baking section (HAEB), the cooling unit (SCPC), one of the developing units (DEVs), and the fourth baking section (DLTB) before entering the return loading port, forming a return path. Specifically, an optical inspection unit (AOI) is also provided at the return loading port, that is, after the wafer passes through the baking section of the fourth baking section (DLTB), it first passes through the optical inspection unit (AOI) for inspection, and then enters the interlayer process module 400 through the return loading port. Since the return solution processing frame 120 includes two developing units (DEVs) arranged sequentially in the vertical direction, the wafer can pass through either developing unit (DEV) when it passes through the developing unit (DEV). There is no restriction on this, and the decision will be made based on the actual situation in actual use.

[0028] In some specific embodiments, the third baking section HAEB is used to bake the exposed wafer; the fourth baking section DLTB is used to bake the developed wafer.

[0029] In some embodiments, the channel coating and developing apparatus further includes multiple transfer robots 600; each transfer path corresponds to at least two transfer robots 600; one transfer robot 600 is used to transfer the wafer from the wafer entry liquid treatment frame 110 to the wafer entry heat treatment frame 210; the other transfer robot 600 is used to transfer the wafer from the return heat treatment frame 220 to the return liquid treatment frame 120. Specifically, each wafer entry path corresponds to a transfer robot 600, which facilitates the transfer of wafers from the wafer entry liquid treatment frame 110 to the wafer entry heat treatment frame 210, or from the wafer entry heat treatment frame 210 to the wafer entry liquid treatment frame 110. More specifically, in the wafer entry path, the wafer is first cooled by the cooling unit TCP, and then transferred by the transfer robot 600 to the first coating section SCB for spin coating of the anti-reflective layer. After the spin coating of the anti-reflective layer is completed, the wafer is transferred by the transfer robot 600 to the first baking section BHTB for baking. After baking, the wafer is transferred by the transfer robot 600 to the cooling unit SCPC for cooling. After cooling, the wafer is transferred by the transfer robot 600 to the second coating section COT for spin coating of the photoresist. After the spin coating of the photoresist is completed, the wafer is transferred by the transfer robot 600 to the second baking section HLTB for baking. After baking, the wafer is transferred by the transfer robot 600 to the edge exposure unit. In the wafer ejection path, the wafer lithographically processed by the pre-lithography cooling unit enters the third baking unit HAEB for baking. After baking, it is transferred by the transfer robot 600 corresponding to the wafer ejection path to the cooling unit SCPC for cooling. After cooling, it is transferred by the transfer robot 600 to the developing unit DEV for developing. After developing, it is transferred by the transfer robot 600 to the fourth baking unit for baking. After baking, it enters the optical inspection unit AOI for inspection.

[0030] In some embodiments, the combined height of the liquid treatment module 100 and the heat treatment module 200 is less than 3.5 meters. That is, the overall height of the coating and developing equipment is less than 3.5 meters. Based on the traditional six-layer film transfer method, an eight-layer film transfer method is added (the first coating section SCB and the first baking section BHTB are one layer, the second coating section COT and the second baking section HLTB are one layer, the third baking section HAEB and the corresponding developing unit DEV are one layer, and the fourth baking section DLTB and the corresponding developing unit DEV are one layer, that is, the liquid treatment module 100 and the heat treatment module 200 form a total of eight-layer film transfer method), and two film transfer paths. The increase in film transfer paths is achieved without increasing the height of the equipment. If one film transfer path is damaged, the other can still continue to work normally, reducing the possibility of equipment downtime.

[0031] In some embodiments, the interface module includes a first transfer cavity 310, a second transfer cavity 320, and a third transfer cavity 350; wherein the first transfer cavity 310 is connected to the heat treatment module 200, and the second transfer cavity 320 is connected to the first transfer cavity 310. That is, the dual-transfer path coating and developing equipment consists of, from left to right, a wafer cassette module 500, an interlayer process module 400, a liquid treatment module 100, a heat treatment module 200, the first transfer cavity 310, and the second transfer cavity 320, arranged in a specific manner to improve the wafer transfer efficiency. In addition, the third transfer cavity... 350 is located at the bottom of the first transfer cavity 310 and the second transfer cavity 320. The third transfer cavity 350 is equipped with a pre-lithography cooling unit to cool the wafer before photolithography. Specifically, the first transfer cavity 310 is equipped with a forward washing unit PIS, and the second transfer cavity 320 is equipped with a back washing unit BS. The back washing unit BS is connected to the wafer entry heat treatment frame 210. The forward washing unit PIS is connected to the wafer return heat treatment frame 220. This allows the wafer to pass through the back washing unit BS, the pre-lithography cooling unit, and the forward washing unit PIS in sequence within the interface module before entering any wafer return heat treatment frame 220.

[0032] In some specific embodiments, the interface module further includes an edge exposure unit TWEE, a first wall penetration unit TRN1, a second wall penetration unit TRN2, and a third wall penetration unit TRN3; The edge exposure unit TWEE is located on the wafer loading heat treatment frame 210, which connects the wafer loading heat treatment frame 210 to the first transfer cavity 310. The first through-wall unit TRN1 is located in the first transfer cavity 310, connecting the first transfer cavity 310 with the second transfer cavity 320, so that the wafer of the wafer loading heat treatment frame 210 enters the back washing unit BS after passing through the edge exposure unit TWEE and the first through-wall unit TRN1. The second through-wall unit TRN2 is located in the first transfer cavity 310, connecting the first transfer cavity 310 and the second transfer cavity 320 to transfer the wafer from the back washing unit BS to the photolithography pre-cooling unit. During the transfer process, the wafer is held in the second through-wall unit TRN2 and the third transfer cavity 350 by a third transfer robot for picking and placing. Details will be described later.

[0033] The third through-wall unit TRN3 is located in the first transfer cavity 310, connecting the return heat treatment frame 220 to the first transfer cavity 310, so that the wafers of the forward washing unit PIS enter the return heat treatment frame 220 through the second through-wall unit TRN2.

[0034] Specifically, the edge exposure unit TWEE is located in the wafer entry heat treatment frame 210, which is connected to the first transfer cavity 310. When the wafer enters the edge exposure unit TWEE from the second baking section HLTB, the exposure process is first performed in the edge exposure unit TWEE. After the exposure process is completed, the edge exposure unit TWEE transfers the wafer to the first transfer cavity 310, where it is transferred. The wafer is transferred by a robotic arm, as described later. Since the back wash unit BS is located in the second transfer cavity 320, and back washing is required after exposure, the wafer is transferred from the first transfer cavity 310 to the first through-wall unit TRN1. The first through-wall unit TRN1 transfers the wafer from the first transfer cavity 310 to the second transfer cavity 320, where it is transferred to the back wash unit BS for back washing. The second transfer cavity 320 is also equipped with a temporary storage unit BF, which is used to place the wafers after back washing, so as to collect the wafers in a unified manner and facilitate the transfer of the wafers to the next step for processing.

[0035] In some embodiments, the cooling component TCP and the edge exposure unit TWEE are configured in the same way, that is, the cooling component TCP can cool the wafer while performing through-wall transfer, and the edge exposure unit TWEE can expose the wafer while performing through-wall transfer; thereby reducing the space occupied inside the cavity and improving space utilization.

[0036] More specifically, the pre-lithography cooling unit includes a pre-lithography cooling plate CPC and a lithography machine SCAN. The pre-lithography cooling plate CPC is located in the first transfer cavity 310, and the lithography machine SCAN is located in the second transfer cavity 320. During lithography, the pre-lithography cooling plate CPC needs to be cooled first, and after cooling, it enters the lithography machine SCAN for lithography. More specifically, the wafers in the temporary storage unit BF in the second transfer cavity 320 are transferred to the second through-wall unit TRN2, and then transferred by the second through-wall unit TRN2 to the first transfer cavity 310. In the first transfer cavity 310, they are transferred to the pre-lithography cold plate CPC for cooling. After cooling, they enter the lithography machine SCAN for lithography. After lithography, they are sent to the forward washing unit PIS, which is located in the first transfer cavity 310. The wafers that have been processed by the lithography machine SCAN can be sent to the second through-wall unit TRN2 first, and then transferred to the first transfer cavity 310 by the second through-wall unit TRN2. Alternatively, a temporary storage unit BF can be set up to place the lithographic wafers, and a separate through-wall unit can be set up for transfer. There are no restrictions here, as long as the lithographic wafers can be transferred to the forward washing unit PIS.

[0037] More specifically, the position of the forward washing unit PIS is located in the first transfer cavity 310 and corresponds to the position of the return heat treatment frame 220, thereby shortening the wafer transfer distance and improving the wafer transfer efficiency. The third through-wall unit TRN3 connects the return heat treatment frame 220 to the first transfer cavity 310; at the same time, since the return heat treatment frame 220 has two layers, the number of third through-wall units TRN3 corresponds to the number of return heat treatment frames 220, and the number of forward washing units PIS is greater than or equal to the number of third through-wall units TRN3; after the wafer undergoes the forward washing process in the forward washing unit PIS, it is transferred to the third through-wall unit TRN3, and then transferred by the third through-wall unit TRN3 to the third baking section HAEB, thereby completing the wafer transfer process. Among them, the first through-wall unit TRN1, the second through-wall unit TRN2, and the third through-wall unit TRN3 are all prior art, which can be understood as openings in the side walls of two adjacent cavities, with conveyor belts set in the openings, which will not be elaborated here.

[0038] In some embodiments, the interface module further includes a first transfer robot 330, a second transfer robot 340, and a third transfer robot; the first transfer robot 330 is disposed in the first transfer cavity 310 to drive the wafer within the first transfer cavity 310 to move; specifically, one or more first transfer robots 330 may be disposed in the first transfer cavity 310, without limitation, as long as they can transfer the wafer within the first transfer cavity 310, and the first transfer robot 330 can move the wafer within the first transfer cavity 310 between any two of the edge exposure unit TWEE, the first through-wall unit TRN1, the second through-wall unit TRN2, the pre-lithography cooling unit, the positive washing unit PIS, and the third through-wall unit TRN3; the second transfer machine A robotic arm 340 is disposed in the second transfer cavity 320 to move the wafer within the second transfer cavity 320. One or more second transfer robotic arms 340 can be disposed in the second transfer cavity 320; there is no limitation on this, as long as they can transfer the wafer within the second transfer cavity 320. The second transfer robotic arm 340 can move the wafer between any two of the backwash unit BS, the temporary storage unit BF, the first through-wall unit TRN1, and the second through-wall unit TRN2. One or more third transfer robotic arms can be disposed in the third transfer cavity 350; there is no limitation on this, as long as they can transfer the wafer. The third transfer robotic arms can move the wafer between the second through-wall unit TRN2 and the pre-lithography cooling unit.

[0039] In some specific embodiments, a fourth through-wall unit TRN4 is provided at the wafer return loading port. Two TRN4 units are provided, each corresponding to one of the two wafer return liquid processing modules 100, for transferring wafers inspected by the optical inspection unit (AOI) to the interlayer process module 400. The interlayer process module 400 also includes a temporary storage unit BF for holding wafers that have entered the interlayer process module 400 after passing through the AOI, thus performing unified processing on the wafers and transferring them to the wafer cassette module 500. In addition, the interlayer process module 400 also includes a wafer notch lookup unit NF and an adhesion enhancement unit ADB. Before entering the wafer feed path, the wafer first passes through the wafer notch lookup unit NF and the adhesion enhancement unit ADB; this is prior art and will not be elaborated upon here.

[0040] In some more specific embodiments, the liquid processing module 100, the heat treatment module 200, and the interface module are arranged side by side and symmetrically to form a control channel. Moving robots, conveying robots, and other robotic arms are all located within the control channel to facilitate the control of wafer movement. In the prior art, the production capacity of a six-layer duplex symmetrical architecture is limited by the number of robotic arms and process units, and its capacity has consistently failed to exceed 300 WPH. By improving it to an eight-layer duplex symmetrical architecture, a production capacity exceeding 300 WPH is achieved without increasing the equipment height.

[0041] The implementation principle of a dual-path coating and developing device according to an embodiment of this application is as follows: the wafers in the wafer cassette module 500 sequentially pass through the wafer notch query unit NF, the adhesion enhancement unit ADB, the cooling unit TCP, the first coating section SCB, the first baking section BHTB, the cooling unit SCPC, the second coating section COT, the second baking section HLTB, the edge exposure unit TWEE, the first through-wall unit TRN1, the back wash unit BS, the temporary storage unit BF, the second through-wall unit TRN2, the pre-lithography cold plate CPC, the lithography machine SCAN, the forward wash unit PIS, the third through-wall unit TRN3, the third baking section HAEB, the cooling unit SCPC, the developing unit DEV, the fourth baking section DLTB, the optical inspection unit AOI, and the fourth through-wall unit TRN2. After passing through the wall unit TRN4 and the temporary storage unit BF, the wafers return to the wafer cassette module 500, thus completing the wafer processing. Simultaneously, the dual wafer transfer path setup improves wafer transfer efficiency; if one transfer path is damaged, the remaining paths can still be used, ensuring uninterrupted wafer transfer. Furthermore, the back wash unit BS is located in the second transfer cavity 320, and the forward wash unit PIS is located in the first transfer cavity 310, bringing the forward wash unit PIS closer to the return heat treatment frame 220. Wafers that have completed the back wash process in the back wash unit BS are uniformly collected in the temporary storage unit BF, and then pass through the temporary storage unit BF and the pre-lithography cooling unit before entering the forward wash unit PIS, thereby shortening the wafer transfer path and improving wafer transfer efficiency.

[0042] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A dual-path coating and developing device, characterized in that, include: The liquid treatment module includes at least two layers of infeed liquid treatment frame and at least two layers of return liquid treatment frame; The wafer entry solution treatment frame is used for surface coating processes on wafers, and the wafer return solution treatment frame is used for developing processes on wafers. A heat treatment module includes at least two layers of wafer entry heat treatment frames and at least two layers of wafer return heat treatment frames; the wafer entry heat treatment frames are configured corresponding to the wafer entry liquid treatment frames, and the wafer return heat treatment frames are configured corresponding to the wafer return liquid treatment frames; the heat treatment module is used to perform heat treatment processes on wafers. An interface module, connected to the heat treatment module, is used to transfer the wafer from the wafer-to-wafer heat treatment frame to the wafer heat treatment frame. Among them, wafers undergoing surface coating processes within at least one layer of the wafer entry liquid treatment frame are introduced into the corresponding wafer entry heat treatment frame for heat treatment processes; after processing, they are introduced into the interface module. After passing through the interface module, the film enters any of the returned film heat treatment frames for heat treatment, and then enters the corresponding returned film liquid treatment frame for development, thus forming at least two film transfer paths.

2. The dual-path coating and developing equipment according to claim 1, characterized in that, The interface module includes a first transfer cavity, a second transfer cavity, and a third transfer cavity; the first transfer cavity is equipped with a forward washing unit, the second transfer cavity is equipped with a back washing unit, and the third transfer cavity is equipped with a pre-lithography cooling unit; the back washing unit is connected to the wafer entry heat treatment frame; the forward washing unit is connected to the wafer return heat treatment frame; so that the wafer passes through the back washing unit, the pre-lithography cooling unit, and the forward washing unit in sequence within the interface module before entering any of the wafer return heat treatment frames.

3. The dual-path coating and developing equipment according to claim 2, characterized in that, The interface module also includes an edge exposure unit, a first wall penetration unit, a second wall penetration unit, and a third wall penetration unit; The edge exposure unit is disposed on the wafer loading heat treatment frame, and the wafer loading heat treatment frame is connected to the first transfer cavity; The first through-wall unit is located in the first transfer cavity and connects the first transfer cavity with the second transfer cavity so that the wafer of the wafer loading heat treatment frame enters the back washing unit after passing through the edge exposure unit and the first through-wall unit. The second through-wall unit is located in the first transfer cavity, connecting the first transfer cavity and the second transfer cavity, so as to transfer the wafer from the back washing unit to the photolithography pre-cooling unit; The third through-wall unit is located in the first transfer cavity and connects the return heat treatment frame to the first transfer cavity, so that the wafer of the forward washing unit enters the return heat treatment frame through the third through-wall unit.

4. The dual-path coating and developing equipment according to claim 3, characterized in that, The interface module further includes a first transfer robot, a second transfer robot, and a third transfer robot; the first transfer robot is disposed in the first transfer cavity to drive the wafer within the first transfer cavity to move. The second transfer robot is disposed in the second transfer cavity to drive the wafer within the second transfer cavity to move; The third transfer robot is located in the third transfer cavity to move the wafer within the third transfer cavity.

5. The dual-path coating and developing equipment according to claim 1, characterized in that, It also includes an interlayer process module and a wafer cassette module that are interconnected; the interlayer process module includes a wafer loading port and a wafer return loading port; the wafer loading port is connected to the wafer loading solution frame to transfer the wafer from the wafer cassette module to the wafer loading solution frame; the wafer return loading port is connected to the wafer return solution frame to transfer the wafer from the wafer return solution frame to the wafer cassette module.

6. The dual-path coating and developing equipment according to claim 5, characterized in that, The interlayer process module also includes a cooling unit; the cooling unit is located in the wafer transfer path and is used to cool the wafer when in contact with it.

7. The dual-path coating and developing equipment according to claim 6, characterized in that, The wafer loading solution treatment frame includes a first coating section and a second coating section arranged sequentially in a vertical direction; the first coating section is connected to the wafer loading port; the second coating section is connected to the cooling unit. The wafer feeding heat treatment frame includes a first baking section and a second baking section arranged sequentially in a vertical direction; one end of the first baking section is connected to the first coating section, and the other end is connected to the cooling unit; one end of the second baking section is connected to the second coating section, and the other end is connected to the back washing unit; so that the wafer passes through the first coating section, the first baking section, the cooling unit, the second coating section, and the second baking section in sequence before entering the back washing unit.

8. The dual-path coating and developing equipment according to claim 6, characterized in that, The film return solution processing frame includes two developing units arranged sequentially along the vertical direction; the film return solution processing frame is connected to the cooling unit; The wafer return heat treatment frame includes a third baking section and a fourth baking section arranged sequentially in a vertical direction; one end of the third baking section is connected to the forward washing unit, and the other end is connected to the cooling unit; one end of the fourth baking section is connected to the wafer return liquid treatment frame, and the other end is connected to the wafer return loading port; so that the wafer passes through the forward washing unit, then sequentially passes through the third baking section, the cooling unit, any one of the developing units, and the fourth baking section, and enters the wafer return loading port.

9. The dual-path coating and developing equipment according to claim 1, characterized in that, It also includes multiple transfer robots; each wafer transfer path corresponds to at least two transfer robots; one of the transfer robots is used to transfer the wafer from the wafer entry liquid treatment frame to the wafer entry heat treatment frame; the other transfer robot is used to transfer the wafer from the return heat treatment frame to the return liquid treatment frame.

10. The dual-path coating and developing apparatus according to any one of claims 1-9, characterized in that, The combined height of the liquid treatment module and the heat treatment module is less than 3.5 meters.

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