A memory module installation self-test method

Abstract

The application discloses a memory bank installation self-checking method and belongs to the technical field of computer storage equipment detection. The method separates the test signal suitable for the working state of the memory, obtains incident signals and reflection signals, collects the voltage conversion of the incident signals and the reflection signals into digital information, calculates the reflection coefficient, the actual impedance of each detection frequency point and the deviation, sets the deviation threshold, compares and generates a detection result, analyzes abnormal information, issues a re-plugging or replacement prompt, and synchronizes the result to a memory training process. The method realizes accurate detection of the installation state of the memory bank and the link impedance, timely troubleshoots poor contact problems caused by vibration or improper installation, reduces equipment operation failures, optimizes the memory training effect, and improves the equipment operation stability and maintenance convenience.

Description

Technical Field

[0001] This invention relates to the field of computer storage device testing technology, and in particular to a self-test method for memory module installation. Background Technology

[0002] With the widespread adoption and performance upgrades of data centers, servers, and various computing devices, memory modules, as core storage components, are finding increasingly wider applications, leading to ever-increasing demands for installation stability and link transmission quality. Currently, memory module installation primarily relies on manual operation and mechanical fixtures. Physical fixation is achieved through structural designs such as snap-fit ​​locks, ensuring the initial connection between the memory module and the motherboard slot. During the product manufacturing phase, manufacturers verify the overall operational status of the equipment through stress tests and power-on self-tests to confirm the normal functioning of core components such as memory modules. Some systems also feature memory initialization detection functions, capable of identifying obvious faults such as chip failure or incomplete installation. During equipment operation, some monitoring mechanisms can record bit flips, CE anomalies, and UCE anomalies, providing post-incident reference for troubleshooting. These technologies and application models collectively constitute the current state of memory module installation and testing, providing a certain level of assurance for the basic operation of the equipment.

[0003] However, existing technologies still present unavoidable technical problems in practical applications. During transportation, racking, and relocation, servers and other equipment are inevitably subjected to external forces such as vibration and bumps, which may lead to poor contact between memory modules and slot pins. This poor contact is often not detected by traditional structural fixing checks or initialization processes, causing sudden shutdowns due to abnormal link impedance after a period of operation, severely impacting business continuity. Current memory initialization processes can only screen out completely faulty or obviously not installed memory modules. They lack effective detection methods for cases where initialization passes but link signal transmission quality is poor, making it impossible to accurately determine whether the link impedance is within the normal range. Anomaly monitoring during operation is a post-event alarm mechanism, only recording relevant information after a failure occurs, unable to predict potential risks in advance, and requiring maintenance personnel to continuously monitor log data, resulting in high maintenance costs. Furthermore, existing technologies lack the ability to quantitatively detect link impedance characteristics. They do not analyze link status through systematic processes such as signal separation, voltage acquisition, impedance calculation, and threshold comparison, making it impossible to promptly locate impedance anomalies caused by poor contact or vibration interference, and unable to issue early warnings and guide maintenance operations, severely restricting the stability and reliability of equipment operation. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a memory module installation self-test method.

[0005] The objective of this invention is achieved through the following technical solution:

[0006] A method for self-testing memory module installation is provided, which includes the following steps:

[0007] S1. Separate the test signal that adapts to the working state of the memory to obtain the incident signal and the reflected signal, collect the voltage corresponding to the two signals and convert them into digital information to obtain complete voltage data covering all detection frequency points;

[0008] S2. Calculate the reflection coefficient based on the ratio of the incident signal voltage to the reflected signal voltage. Substitute the reflection coefficient into the reflection method impedance calculation formula and combine it with the link design impedance to obtain the actual link impedance corresponding to each detection frequency point. Then calculate the deviation between the actual link impedance and the link design impedance.

[0009] S3. Based on the link design standards and the transmission line impedance variation law, set the deviation threshold, compare the impedance deviation of each frequency point with the deviation threshold one by one, and generate the impedance detection result containing the impedance value of each frequency point, the deviation data and the overall link impedance evaluation.

[0010] S4. Analyze the impedance detection results, identify abnormal situations that exceed the deviation threshold, clarify the link and frequency information corresponding to the abnormality, issue a prompt to re-insert or replace the relevant memory module, and synchronize the impedance detection results to the memory training process.

[0011] Furthermore, step S1 includes the following sub-steps:

[0012] S1.1. Determine the detection frequency range based on the memory operating frequency, generate a sweep signal covering the frequency range, and adapt the sweep signal to the memory operating state;

[0013] S1.2. The swept frequency signal is separated to obtain the incident signal and the reflected signal;

[0014] S1.3. Collect the voltages corresponding to the incident and reflected signals respectively, convert the collected analog voltage signals into digital information, and form voltage data covering all detection frequency points.

[0015] Furthermore, step S2 includes the following sub-steps:

[0016] S2.1. Using each detection frequency point as a unit, divide the reflected signal voltage at that frequency point by the incident signal voltage to obtain the reflection coefficient corresponding to each frequency point;

[0017] S2.2. Substitute the reflection coefficient of each frequency point into the reflection method impedance calculation formula, combine it with the preset link design impedance, and obtain the actual link impedance corresponding to each frequency point through logical operation;

[0018] S2.3. Using the link design impedance as a benchmark, calculate the deviation between the actual link impedance and the link design impedance at each frequency point, and record the deviation data for each frequency point.

[0019] Furthermore, step S3 includes the following sub-steps:

[0020] S3.1. Based on link design standards, transmission line impedance variation patterns, and actual application scenarios, set a deviation threshold to distinguish between normal and abnormal impedance.

[0021] S3.2. According to the order of the detection frequency points, compare the impedance deviation recorded at each frequency point with the deviation threshold respectively, and mark the comparison result of each frequency point;

[0022] S3.3. Summarize the impedance values, deviation data and comparison results of all frequency points to generate impedance detection results that include overall link impedance evaluation, and clarify whether there are any abnormalities in the overall link.

[0023] Furthermore, step S4 includes the following sub-steps:

[0024] S4.1. Extract the frequency point information marked as abnormal from the impedance detection results, and associate the link identifier and physical connection path corresponding to the abnormal frequency point;

[0025] S4.2. Locate the memory module corresponding to the abnormal frequency point based on the link information associated with it;

[0026] S4.3. Issue a prompt containing information about the abnormal memory module and operation instructions, which include re-inserting or replacing it;

[0027] S4.4. Synchronize the complete impedance detection results to the memory training process.

[0028] Furthermore, in step S1.1, the generation of the sweep frequency signal is combined with the frequency requirements corresponding to different working modes of the memory to define the detection frequency range. The amplitude and phase parameters of the sweep frequency signal are adapted to the working state of the memory, so that the sweep frequency signal can truly reflect the link signal transmission characteristics when the memory is working.

[0029] Furthermore, in step S2.3, before calculating the deviation, the actual impedance of the link and the design impedance of the link corresponding to each frequency point are matched accordingly, and then the deviation is calculated using statistical methods, including average deviation and standard deviation. When calculating the average deviation, the absolute value of the impedance difference at each frequency point is first obtained, and then the average of all absolute values ​​is calculated. When calculating the standard deviation, the sum of the squares of the impedance differences at each frequency point is first obtained, and then the average is calculated and the square root is taken.

[0030] Furthermore, in step S3.1, the deviation threshold is set in two ways: a specified threshold and a proportional threshold. The specified threshold is determined by a fixed value based on the allowable error range of the link design, while the proportional threshold is determined by a fixed proportion of the link design impedance. Both methods are fine-tuned by taking into account the differences in transmission characteristics at different frequencies.

[0031] Furthermore, in step S4.4, when synchronizing the impedance detection results to the memory training process, the actual impedance data and deviation data of each frequency link in the impedance detection results are first formatted, and the data is encapsulated according to the protocol format that the memory training process can recognize before being transmitted to the memory training process.

[0032] Furthermore, after step S4, the impedance detection results, impedance values ​​at each frequency point, deviation data, anomaly indicators, and the location of the memory module are stored. At the same time, the detection execution time, the corresponding device identifier, and the memory channel information are also stored. This information is organized in a structured data format and stored in a designated storage unit to form a complete detection record.

[0033] The beneficial effects of this invention are:

[0034] (1) By separating the test signal of the working state of the memory, collecting voltage data, calculating impedance and deviation and comparing the threshold, the memory module installation and link abnormalities can be accurately identified and timely prompts can be issued to reduce equipment operation failures.

[0035] (2) Relying on the complete data formed by link impedance detection, a reliable reference is provided for adjusting memory training parameters, optimizing the memory initialization process and reducing the probability of training failure;

[0036] (3) By leveraging the integrated design of the chip interface and the detection record storage mechanism, routine detection without the need for external equipment can be achieved, providing data support for equipment maintenance and improving overall operational reliability. Attached Figure Description

[0037] Figure 1 A flowchart outlining the specific steps of a memory module installation self-test method.

[0038] Figure 2 A schematic diagram of the CPUDDR interface topology provided for this embodiment;

[0039] Figure 3 The IO unit topology diagram provided for the embodiment;

[0040] Figure 4 An optimized topology diagram of the IO unit provided for an embodiment. Detailed Implementation

[0041] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0042] Example 1

[0043] See Figure 1 A memory module installation self-test method, the method includes the following steps:

[0044] S1. Separate the test signal that adapts to the working state of the memory to obtain the incident signal and the reflected signal, collect the voltage corresponding to the two signals and convert them into digital information to obtain complete voltage data covering all detection frequency points;

[0045] S2. Calculate the reflection coefficient based on the ratio of the incident signal voltage to the reflected signal voltage. Substitute the reflection coefficient into the reflection method impedance calculation formula and combine it with the link design impedance to obtain the actual link impedance corresponding to each detection frequency point. Then calculate the deviation between the actual link impedance and the link design impedance.

[0046] S3. Based on the link design standards and the transmission line impedance variation law, set the deviation threshold, compare the impedance deviation of each frequency point with the deviation threshold one by one, and generate the impedance detection result containing the impedance value of each frequency point, the deviation data and the overall link impedance evaluation.

[0047] S4. Analyze the impedance detection results, identify abnormal situations that exceed the deviation threshold, clarify the link and frequency information corresponding to the abnormality, issue a prompt to re-insert or replace the relevant memory module, and synchronize the impedance detection results to the memory training process.

[0048] Step S1 includes the following sub-steps:

[0049] S1.1. Determine the detection frequency range based on the memory operating frequency, generate a sweep signal covering the frequency range, and adapt the sweep signal to the memory operating state;

[0050] S1.2. The swept frequency signal is separated to obtain the incident signal and the reflected signal;

[0051] S1.3. Collect the voltages corresponding to the incident and reflected signals respectively, convert the collected analog voltage signals into digital information, and form voltage data covering all detection frequency points.

[0052] Step S2 includes the following sub-steps:

[0053] S2.1. Using each detection frequency point as a unit, divide the reflected signal voltage at that frequency point by the incident signal voltage to obtain the reflection coefficient corresponding to each frequency point;

[0054] S2.2. Substitute the reflection coefficient of each frequency point into the reflection method impedance calculation formula, combine it with the preset link design impedance, and obtain the actual link impedance corresponding to each frequency point through logical operation;

[0055] S2.3. Using the link design impedance as a benchmark, calculate the deviation between the actual link impedance and the link design impedance at each frequency point, and record the deviation data for each frequency point.

[0056] Step S3 includes the following sub-steps:

[0057] S3.1. Based on link design standards, transmission line impedance variation patterns, and actual application scenarios, set a deviation threshold to distinguish between normal and abnormal impedance.

[0058] S3.2. According to the order of the detection frequency points, compare the impedance deviation recorded at each frequency point with the deviation threshold respectively, and mark the comparison result of each frequency point;

[0059] S3.3. Summarize the impedance values, deviation data and comparison results of all frequency points to generate impedance detection results that include overall link impedance evaluation, and clarify whether there are any abnormalities in the overall link.

[0060] Step S4 includes the following sub-steps:

[0061] S4.1. Extract the frequency point information marked as abnormal from the impedance detection results, and associate the link identifier and physical connection path corresponding to the abnormal frequency point;

[0062] S4.2. Locate the memory module corresponding to the abnormal frequency point based on the link information associated with it;

[0063] S4.3. Issue a prompt containing information about the abnormal memory module and operation instructions, which include re-inserting or replacing it;

[0064] S4.4. Synchronize the complete impedance detection results to the memory training process.

[0065] In step S1.1, the generation of the sweep frequency signal is combined with the frequency requirements corresponding to different working modes of the memory to define the detection frequency range. The amplitude and phase parameters of the sweep frequency signal are adapted to the working state of the memory so that the sweep frequency signal can truly reflect the link signal transmission characteristics when the memory is working.

[0066] In step S2.3, before calculating the deviation, the actual impedance of the link and the design impedance of the link corresponding to each frequency point are matched accordingly. Then, the deviation is calculated using statistical methods, including average deviation and standard deviation. When calculating the average deviation, the absolute value of the impedance difference at each frequency point is first obtained, and then the average of all absolute values ​​is calculated. When calculating the standard deviation, the sum of the squares of the impedance differences at each frequency point is first obtained, and then the average is calculated and the square root is taken.

[0067] In step S3.1, the deviation threshold can be set in two ways: a specified threshold and a proportional threshold. The specified threshold is determined by a fixed value based on the allowable error range of the link design, while the proportional threshold is determined by a fixed proportion of the link design impedance. Both methods are fine-tuned by taking into account the differences in transmission characteristics at different frequencies.

[0068] In step S4.4, when synchronizing the impedance detection results to the memory training process, the actual impedance data and deviation data of each frequency link in the impedance detection results are first formatted, and the data is encapsulated according to the protocol format that the memory training process can recognize before being transmitted to the memory training process.

[0069] After step S4, the impedance detection results, impedance values ​​at each frequency point, deviation data, anomaly indicators, and the location of the memory module are stored. At the same time, the detection execution time, the corresponding device identifier, and the memory channel information are also stored. This information is organized in a structured data format and stored in a designated storage unit to form a complete detection record.

[0070] Example 2

[0071] This embodiment provides a memory module installation self-test method. Through a systematic approach, it detects the link impedance after memory module installation, identifying and addressing contact problems caused by improper installation, transportation vibrations, or other factors. This ensures the stability of memory operation. The specific implementation process is as follows:

[0072] S1. Separate the test signal that adapts to the working state of the memory to obtain the incident signal and the reflected signal, collect the voltage corresponding to the two signals and convert them into digital information to obtain complete voltage data covering all detection frequency points;

[0073] S1.1. Determine the detection frequency range based on the memory operating frequency, and generate a sweep signal covering this frequency range. The sweep signal is adapted to the memory operating state:

[0074] The generation of the sweep frequency signal defines the detection frequency range based on the frequency requirements corresponding to different memory operating modes, ensuring coverage of all operating frequencies supported by the memory. The amplitude and phase parameters of the sweep frequency signal are adapted to the memory's operating state, enabling the sweep frequency signal to accurately reflect the link signal transmission characteristics during memory operation. Impedance testing requires creating a sweep frequency signal within the corresponding frequency range based on the actual operating frequency of the memory. This sweep frequency signal must be consistent with the signal characteristics during normal memory operation, providing a signal source that conforms to actual operating conditions for the subsequent separation and acquisition of incident and reflected signals, ensuring that subsequent test results accurately reflect the link status during actual memory operation.

[0075] S1.2. Separate the swept frequency signal to obtain the incident signal and the reflected signal:

[0076] A directional coupler is incorporated into the chip interface unit to separate the swept frequency signal. As a device capable of separating incident and reflected waves, the directional coupler is not specific to any particular model, material, or structure. Its function is to accurately separate the swept frequency signal during transmission into incident and reflected signals, ensuring that the two signals are interference-free and can be separately acquired and processed. Through the integrated design of the directional coupler, signal separation can be completed within the chip without additional external testing equipment, enabling built-in detection of link impedance and avoiding compatibility and operational complexity issues associated with external device access.

[0077] S1.3. Collect the voltages corresponding to the incident and reflected signals respectively, and convert the collected analog voltage signals into digital information to form voltage data covering all detection frequency points:

[0078] The voltages corresponding to the separated incident and reflected signals are acquired separately using an ADC (Analog-to-Digital Converter). An ADC primarily refers to a device that acquires and measures voltage signals and converts them into digital information that a computer can process; it does not specifically refer to a particular model or bandwidth. The acquisition process must cover all set detection frequencies to ensure that the voltages of both the incident and reflected signals at each frequency are completely acquired. The acquired analog voltage signals are converted into digital information by the ADC. This digital information is organized according to the order of the detection frequencies, ultimately forming complete voltage data covering all detection frequencies. This provides the foundational data for subsequent reflection coefficient calculations and impedance derivation. The acquisition process must ensure the accuracy and completeness of the voltage data to avoid data loss or distortion affecting subsequent detection results.

[0079] S2. Calculate the reflection coefficient based on the ratio of the incident signal voltage to the reflected signal voltage. Substitute the reflection coefficient into the reflection method impedance calculation formula and combine it with the link design impedance to obtain the actual link impedance corresponding to each detection frequency point. Then calculate the deviation between the actual link impedance and the link design impedance.

[0080] S2.1. Taking each detection frequency as a unit, divide the reflected signal voltage at that frequency by the incident signal voltage to obtain the reflection coefficient corresponding to each frequency:

[0081] The reflection coefficient is the ratio of the incident wave voltage to the reflected wave voltage at the port. In this embodiment, each detection frequency point is treated as an independent calculation unit. The digital voltage information of the incident signal and the digital voltage information of the reflected signal after ADC conversion at that frequency point are extracted one by one, and the reflection coefficient corresponding to each frequency point is obtained through division. During the calculation process, it is necessary to ensure that the incident signal voltage and the reflected signal voltage at each frequency point correspond one-to-one to avoid errors in the calculation of the reflection coefficient due to frequency confusion. The calculation result of the reflection coefficient is directly related to the accuracy of the subsequent impedance data, so the calculation must be performed strictly according to the correspondence of the voltage data.

[0082] S2.2. Substitute the reflection coefficient of each frequency point into the reflection method impedance calculation formula, and combine it with the preset link design impedance to obtain the actual link impedance corresponding to each frequency point through logical operations:

[0083] The formula for calculating impedance using the reflection method is: ,

[0084] Where Z represents the actual impedance of the link. The default impedance value for the link or chip design. S11 is the (voltage) reflection coefficient calculated in step S2.1, representing the ratio of the incident wave voltage (a1) to the reflected wave voltage (b1) at port 1. The calculation formula is: .

[0085] Link design impedance is an inherent parameter determined during the design phase of a link or chip. While single-ended signals typically have fixed design standards, this method does not impose specific impedance constraints and can be adapted to the design requirements of different chip manufacturers. The reflection coefficient S11 at each frequency point is compared with the preset link design impedance. By substituting the values ​​into the above formulas sequentially, logical operations are performed to obtain the actual link impedance corresponding to each frequency point. The impedance calculation corresponds one-to-one with the frequency point, ensuring that the link status at each frequency point can be reflected through impedance data. This impedance calculation method mainly references the working principle of a vector network analyzer. Its innovation lies in integrating the directional coupler and ADC device into a chip, realizing the built-in and integrated impedance measurement, eliminating the need for external professional testing instruments.

[0086] S2.3. Using the link design impedance as a benchmark, calculate the deviation between the actual link impedance and the link design impedance at each frequency point, and record the deviation data for each frequency point:

[0087] Before calculating the deviation, the actual impedance and design impedance of the link corresponding to each frequency point are matched to ensure that the actual impedance of each frequency point is compared with the design impedance corresponding to that frequency point. The deviation calculation employs statistical methods, including mean deviation and standard deviation. To calculate the mean deviation, the absolute value of the impedance difference at each frequency point is first calculated, and then all absolute values ​​are averaged to obtain the mean deviation. To calculate the standard deviation, the sum of the squares of the impedance differences at each frequency point is first calculated, then averaged, and the square root is taken to obtain the standard deviation. This statistical method yields complete deviation data for each frequency point, and the deviation results for each frequency point are recorded to provide data for subsequent threshold comparison and anomaly identification. The deviation data must be recorded in the order of the detected frequencies to ensure a correspondence with previous voltage data, reflection coefficient data, and actual impedance data, facilitating subsequent data traceability and analysis.

[0088] S3. Based on the link design standards and the transmission line impedance variation law, set the deviation threshold, compare the impedance deviation of each frequency point with the deviation threshold one by one, and generate the impedance detection result containing the impedance value of each frequency point, the deviation data and the overall link impedance evaluation.

[0089] S3.1. Based on link design standards, transmission line impedance variation patterns, and actual application scenarios, set a deviation threshold to distinguish between normal and abnormal impedance:

[0090] The deviation threshold can be set using two methods: a specified threshold and a proportional threshold. The specified threshold is set to a fixed value based on the allowable error range of the link design. The proportional threshold is set based on a fixed proportion of the link design impedance to determine the threshold range. Both methods are based on link design standards and transmission line impedance variation patterns, while also being fine-tuned to account for differences in transmission characteristics at different frequencies. This ensures that the set deviation threshold accurately distinguishes between normal and abnormal impedance states across the entire detection frequency range. The threshold setting must comprehensively consider the physical characteristics of the link and environmental factors in practical applications. It should not be too lenient, leading to missed detections of abnormal situations, nor too strict, causing misjudgments of normal links. The goal is to ensure that the threshold accurately reflects the reasonable fluctuation range of the link impedance.

[0091] S3.2. According to the order of the detection frequency points, compare the impedance deviation recorded at each frequency point with the deviation threshold, and mark the comparison result of each frequency point:

[0092] Following the pre-defined frequency point detection sequence, impedance deviation data for each frequency point is extracted sequentially and compared with a preset deviation threshold. During the comparison, if the impedance deviation of a frequency point is less than or equal to the deviation threshold, the link status of that frequency point is marked as normal; if the impedance deviation of a frequency point is greater than the deviation threshold, the link status of that frequency point is marked as abnormal. Each frequency point's comparison result must be clearly marked, with the marking information associated with the impedance value and deviation data of that frequency point, ensuring that the link status of each frequency point is clearly reflected in the comparison results. The comparison process must strictly adhere to the set threshold standards to avoid inconsistencies caused by human intervention, ensuring the objectivity and accuracy of the comparison process.

[0093] S3.3. Summarize the impedance values, deviation data, and comparison results for all frequency points to generate impedance detection results that include an overall link impedance evaluation, and determine whether there are any anomalies in the overall link:

[0094] All relevant data from the detected frequency points are compiled, including incident signal voltage digital information, reflected signal voltage digital information, reflection coefficient, actual link impedance, impedance deviation data, and comparison marking results for each frequency point. This data is organized in a structured format. Based on the compiled data, impedance detection results are generated. These results must include detailed data information for each frequency point and an overall link impedance evaluation. The overall link impedance evaluation is based on a comprehensive judgment of the comparison results for all frequency points. If one or more frequency points are marked as abnormal, the overall link impedance evaluation is abnormal; if all frequency points are marked as normal, the overall link impedance evaluation is normal. The impedance detection results must clearly indicate whether there are any anomalies in the overall link, providing a clear basis for subsequent anomaly analysis and handling, while ensuring the completeness of the detection results for easy subsequent querying and application.

[0095] S4. Analyze the impedance detection results, identify abnormal situations that exceed the deviation threshold, clarify the link and frequency information corresponding to the abnormality, issue a prompt to re-insert or replace the relevant memory module, and synchronize the impedance detection results to the memory training process.

[0096] S4.1. Extract the frequency information marked as abnormal from the impedance detection results, and associate the link identifier and physical connection path corresponding to the abnormal frequency:

[0097] From the generated impedance detection results, frequency points marked as abnormal are filtered out, including detailed information such as the abnormal frequency point's serial number, corresponding reflection coefficient, actual link impedance, and impedance deviation data. Based on the abnormal frequency point's serial number, the corresponding link identifier and physical connection path are associated. The link identifier distinguishes different memory links, and the physical connection path clarifies the memory module slot location and connection relationship corresponding to that link. By associating the link identifier and physical connection path, the abnormal link can be accurately located, providing fundamental information for subsequent memory module location and ensuring accurate identification of abnormal links.

[0098] S4.2. Based on the link information associated with the abnormal frequency point, locate the memory module corresponding to that link:

[0099] Based on the link identifier and physical connection path information obtained in step S4.1, the memory module corresponding to the link is traced to identify the specific memory module involved in the anomaly. The localization process must be combined with the design topology of the memory link to ensure the accurate correspondence between link information and memory modules, avoiding maintenance errors caused by incorrect link-to-memory module mapping. Accurately locating the memory module corresponding to the anomaly provides a clear direction for subsequent maintenance operations, enabling maintenance personnel to quickly pinpoint the components requiring attention and improving maintenance efficiency.

[0100] S4.3. Issue a prompt containing information about the abnormal memory module and operation instructions, which include reseating or replacing it.

[0101] Once the faulty memory module is located, a corresponding prompt message is issued. This message includes information about the faulty memory module, such as its link identifier, physical connection path, and abnormal frequency data. It also provides clear instructions for reseating or replacing the memory module. The prompt message is automatically triggered by a built-in detection mechanism, eliminating the need for manual monitoring. This ensures that anomalies are detected promptly, preventing undetected anomalies from exacerbating link failures and causing system-wide operational problems. The clear instructions provide maintenance personnel with a clear guide to action, reducing uncertainty during maintenance.

[0102] S4.4. Synchronize the complete impedance detection results to the memory training process:

[0103] The complete impedance detection results, including detailed data for each frequency point, deviation data, comparison results, and overall evaluation, are synchronized to the memory training process. During synchronization, the actual impedance data and deviation data for each frequency point in the impedance detection results are first formatted and encapsulated according to a protocol format recognizable by the memory training process before being transmitted. During the memory module initialization phase, it is typically necessary to adjust the write clock duty cycle to train a suitable parameter to ensure high-speed and stable memory operation. The impedance detection results can serve as a reference for memory training, assisting in optimizing the memory training process. By combining the impedance detection results with the memory training process, the adjustment of memory training parameters can be more closely aligned with the actual impedance state of the current link, improving the targeting and effectiveness of memory training.

[0104] In some embodiments, after step S4, a data storage process is initiated to store the impedance detection results, impedance values ​​at each frequency point, deviation data, anomaly identifiers, and located memory module information. Simultaneously, the detection execution time, corresponding device identifier, and memory channel information are stored. This information is organized according to a structured data format and stored in a designated storage unit to form a complete detection record. This detection record supports retrieval by device identifier, detection time, and memory channel information, and is used for problem tracing and fault diagnosis during subsequent equipment maintenance, providing data support for long-term equipment maintenance and performance analysis.

[0105] In the memory training process, by combining the synchronized impedance detection results, relevant parameters for memory training are adjusted, including write clock duty cycle, signal amplitude, and timing compensation parameters. By referring to the actual impedance and deviation data of the link at each frequency point, the actual situation of the link transmission characteristics can be clarified, and training parameters can be adjusted accordingly to avoid training failures caused by mismatch between parameter settings and the actual link state. When memory training fails, the stored impedance detection records can be used to troubleshoot the cause of the failure, clarifying whether the failure stems from a link problem or other factors, providing a basis for problem localization.

[0106] Meanwhile, the impedance detection process of this method can be performed during the memory initialization phase after the device is powered on, or periodically during device operation, forming a routine detection mechanism. After equipment transportation or rack mounting, this method can quickly detect whether memory modules have poor contact due to vibration, promptly identifying and addressing potential problems to prevent malfunctions caused by abnormal link impedance during device operation. The detection process does not interrupt normal device operation and can be completed automatically in the background, balancing the effectiveness of the detection with the continuity of device operation.

[0107] Furthermore, the integrated design of the directional coupler and ADC device does not require changes to the overall architecture of the existing chip; only local optimization is needed in the chip interface unit, resulting in good compatibility and feasibility. This integrated design makes impedance sensing a built-in function of the chip, eliminating the need for additional external hardware, reducing hardware costs and integration complexity, and minimizing signal interference and compatibility issues that may arise from external device access.

[0108] In the deviation calculation process, the choice of statistical methods can be flexibly adjusted according to actual testing needs. The application of mean deviation and standard deviation can reflect the dispersion of impedance data from different dimensions, providing more comprehensive data support for the comparison of deviation thresholds. The parallel application of the two statistical methods can avoid the limitations of a single method and improve the accuracy of deviation judgment.

[0109] During the frequency sweep signal generation process, the detection frequency range determined based on the memory's operating frequency can comprehensively cover all possible operating conditions of the memory, ensuring that the link impedance can be effectively detected in different operating modes. The adaptability of the amplitude and phase parameters of the frequency sweep signal to the memory's operating state ensures that the detection signal can truly simulate the signal transmission situation when the memory is working, making the detection results more valuable.

[0110] This method achieves accurate detection of memory module installation status and link transmission quality through a systematic link impedance detection process. Its technical effects are mainly reflected in the following aspects:

[0111] First, it can effectively detect whether memory modules are installed correctly and whether the link impedance is normal. Through comprehensive detection and deviation analysis of link impedance at various frequency points, it can promptly identify contact problems caused by improper installation, transportation vibration, etc., reducing equipment failures caused by link anomalies. Second, by combining impedance detection results with the memory training process, it improves the effectiveness and targeting of memory training, optimizes the memory initialization process, and reduces the probability of memory training failure. Third, the complete detection records generated provide rich data support for equipment maintenance, facilitating problem tracing and troubleshooting, and improving the efficiency and accuracy of equipment maintenance. Fourth, the built-in detection design eliminates the need for external equipment support, reducing detection costs and operational complexity. At the same time, the routine detection mechanism enables early detection and handling of potential problems, improving the stability and reliability of equipment operation. Fifth, by clarifying the cause of memory training failure, it improves the accuracy of problem delimitation, provides a clear direction for subsequent fault handling, and reduces the time cost of problem troubleshooting. Sixth, it is compatible with different chip designs and memory operating modes, has wide applicability, and can meet the memory module detection needs of various servers and other devices.

[0112] Among them, the effective detection of memory module installation status and link impedance normality is directly achieved through core detection steps. This effect is directly derived from the complete process of incident and reflected signal acquisition, impedance calculation, threshold comparison and anomaly identification, which ensures the timely detection and handling of link problems and provides a basic guarantee for the stable operation of the equipment.

[0113] Example 3

[0114] In some embodiments, by optimizing the CPU interface design and signal processing flow, accurate detection of link impedance after memory module installation can be achieved, thus identifying potential problems such as poor contact. The implementation of this method is based on a specific hardware topology; the specific hardware connections and steps are as follows:

[0115] See Figure 2 The CPU establishes a signal connection with the I / O unit through the DDR controller. The I / O unit forms a transmission link with the memory slot via the PHY module. After the memory module is inserted into the slot, it contacts the pins inside the slot, forming a complete signal path between the CPU and the memory module. This topology provides basic hardware support for subsequent impedance testing, ensuring that the test signal can be stably transmitted between the CPU and the memory module, laying the hardware foundation for the accuracy of the test data.

[0116] See Figure 3 The original I / O unit topology consists of a TX transmitter, an RX receiver, and a PHY module. It can only perform conventional signal transmission and reception functions and cannot separate incident and reflected signals, making it difficult to meet the requirements of impedance detection. To achieve the signal separation and acquisition functions required for impedance detection, the I / O unit topology needs to be optimized.

[0117] like Figure 4 As shown, the optimized IO unit topology adds a directional coupler and two sets of ADC devices to the original structure. The input of the directional coupler is connected to the TX transmitter, and the output is connected to the incident wave sampling branch and the reflected wave sampling branch, respectively. The two sets of ADC devices are connected to the two sampling branches, and the end establishes a data connection with the CPU's computing unit. The directional coupler, as a device capable of separating incident and reflected waves, is not specific to a particular model or material. Its function is to accurately separate the test signal output from the TX transmitter into incident and reflected signals, ensuring that the two signals enter the corresponding sampling branches without interference.

[0118] Once the detection process officially begins, the detection frequency range is first determined based on the memory's operating frequency. A sweep signal covering this range is then generated. The amplitude and phase parameters of the sweep signal are adapted to the memory's operating state, accurately reflecting the link signal transmission characteristics during memory operation. After being output from the TX transmitter, the sweep signal enters a directional coupler, which separates the incident and reflected signals. The separated incident signal propagates along the incident wave sampling branch, while the reflected signal propagates along the reflected wave sampling branch.

[0119] Two sets of ADC devices acquire the voltages of the incident and reflected signals, respectively. The ADC devices convert the acquired analog voltage signals into digital information that can be processed by a computer, without specifying a particular model or bandwidth. The acquisition process covers all detection frequencies, ensuring that the incident and reflected signal voltages at each frequency are completely acquired. The acquired digital voltage information is organized according to frequency order to form a complete voltage dataset, which is then transmitted to the CPU's computing unit.

[0120] The calculation unit first divides the reflected signal voltage at each detection frequency by the incident signal voltage to obtain the reflection coefficient S11 for each frequency. S11 is the voltage reflection coefficient of port 1, which is equal to the ratio of the incident wave voltage to the reflected wave voltage at port 1. Then, the calculation unit substitutes the reflection coefficient S11 into the reflection impedance calculation formula and, combined with the preset link design impedance Z0, obtains the actual link impedance for each frequency through logical operations. The core logic of this formula is that the actual link impedance equals the link design impedance multiplied by (the sum of 1 and the reflection coefficient) divided by (the difference between 1 and the reflection coefficient).

[0121] After obtaining the actual impedance of the link at each frequency point, the calculation unit uses the link design impedance as a benchmark and employs statistical methods to calculate the deviation between the actual impedance and the design impedance. These statistical methods include mean deviation and standard deviation, obtaining complete deviation data for each frequency point. Simultaneously, considering link design standards, transmission line impedance variation patterns, and actual application scenarios, deviation thresholds are set to distinguish between normal and abnormal impedance. These thresholds can be set using specified thresholds or proportional thresholds, both of which are fine-tuned based on the differences in transmission characteristics at different frequencies.

[0122] The calculation unit compares the impedance deviation of each frequency point with the deviation threshold one by one according to the detection frequency point order, marks the comparison result of each frequency point, and then summarizes the impedance values, deviation data and comparison results of all frequency points to generate an impedance detection result that includes an overall link impedance evaluation, and determines whether there is an anomaly in the overall link. If an abnormal frequency point is found, the calculation unit extracts the abnormal frequency point information from the detection result, associates it with the corresponding link identifier and physical connection path, and locates the corresponding memory module based on the link information.

[0123] Once the location is determined, the system automatically issues a prompt containing information about the abnormal memory module and operational instructions, including reseating or replacing it. Simultaneously, the calculation unit organizes and encapsulates the complete impedance detection results according to a protocol format recognizable by the memory training process, synchronizing it to the memory training process to provide a reference for adjusting memory training parameters. After the steps are completed, the system structurally stores the impedance detection results, frequency data, anomaly identifiers, memory module information, detection time, and device identifiers, forming a complete detection record for easy retrieval during subsequent maintenance.

[0124] This method is achieved through Figure 4 The optimized I / O unit topology shown achieves effective separation and accurate acquisition of incident and reflected signals. Combined with data analysis and processing by the computing unit, it completes comprehensive detection of link impedance. The implementation process does not rely on external testing equipment. Through the collaborative work of the built-in hardware and software processes, it improves the convenience and timeliness of testing, enabling timely detection of problems such as improper memory module installation or poor contact caused by transportation vibrations. This reduces the risk of downtime caused by link anomalies during device operation, while providing a reliable reference for memory training and improving the stability and reliability of memory operation.

[0125] The above description is merely a preferred embodiment of the present invention. It should be understood that the present invention is not limited to the forms disclosed herein and should not be construed as excluding other embodiments. It can be used in various other combinations, modifications, and environments, and can be altered within the scope of the concept described herein through the above teachings or related technologies or knowledge. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of the present invention should be within the protection scope of the appended claims.

Claims

1. A self-test method for installing a memory module, characterized in that, Includes the following steps: S1. Separate the test signal that adapts to the working state of the memory to obtain the incident signal and the reflected signal, collect the voltage corresponding to the two signals and convert them into digital information to obtain complete voltage data covering all detection frequency points; S2. Calculate the reflection coefficient based on the ratio of the incident signal voltage to the reflected signal voltage. Substitute the reflection coefficient into the reflection method impedance calculation formula and combine it with the link design impedance to obtain the actual link impedance corresponding to each detection frequency point. Then calculate the deviation between the actual link impedance and the link design impedance. S3. Based on the link design standards and the transmission line impedance variation law, set the deviation threshold, compare the impedance deviation of each frequency point with the deviation threshold one by one, and generate the impedance detection result containing the impedance value of each frequency point, the deviation data and the overall link impedance evaluation. S4. Analyze the impedance detection results, identify abnormal situations that exceed the deviation threshold, clarify the link and frequency information corresponding to the abnormality, issue a prompt to re-insert or replace the relevant memory module, and synchronize the impedance detection results to the memory training process. Step S1 includes the following sub-steps: S1.

1. Determine the detection frequency range based on the memory operating frequency, generate a sweep signal covering the frequency range, and adapt the sweep signal to the memory operating state; S1.

2. The swept frequency signal is separated to obtain the incident signal and the reflected signal; S1.

3. Collect the voltages corresponding to the incident and reflected signals respectively, convert the collected analog voltage signals into digital information, and form voltage data covering all detection frequency points.

2. The method according to claim 1, characterized in that, Step S2 includes the following sub-steps: S2.

1. Using each detection frequency point as a unit, divide the reflected signal voltage at that frequency point by the incident signal voltage to obtain the reflection coefficient corresponding to each frequency point; S2.

2. Substitute the reflection coefficient of each frequency point into the reflection method impedance calculation formula, combine it with the preset link design impedance, and obtain the actual link impedance corresponding to each frequency point through logical operation; S2.

3. Using the link design impedance as a benchmark, calculate the deviation between the actual link impedance and the link design impedance at each frequency point, and record the deviation data for each frequency point.

3. The method according to claim 1, characterized in that, Step S3 includes the following sub-steps: S3.

1. Based on link design standards, transmission line impedance variation patterns, and actual application scenarios, set a deviation threshold to distinguish between normal and abnormal impedance. S3.

2. According to the order of the detection frequency points, compare the impedance deviation recorded at each frequency point with the deviation threshold respectively, and mark the comparison result of each frequency point; S3.

3. Summarize the impedance values, deviation data and comparison results of all frequency points to generate impedance detection results that include overall link impedance evaluation, and clarify whether there are any abnormalities in the overall link.

4. The method according to claim 1, characterized in that, Step S4 includes the following sub-steps: S4.

1. Extract the frequency point information marked as abnormal from the impedance detection results, and associate the link identifier and physical connection path corresponding to the abnormal frequency point; S4.

2. Locate the memory module corresponding to the abnormal frequency point based on the link information associated with it; S4.

3. Issue a prompt containing information about the abnormal memory module and operation instructions, which include re-inserting or replacing it; S4.

4. Synchronize the complete impedance detection results to the memory training process.

5. The method according to claim 1, characterized in that, In step S1.1, the generation of the sweep frequency signal is combined with the frequency requirements corresponding to different working modes of the memory to define the detection frequency range. The amplitude and phase parameters of the sweep frequency signal are adapted to the working state of the memory so that the sweep frequency signal can truly reflect the link signal transmission characteristics when the memory is working.

6. The method according to claim 2, characterized in that, In step S2.3, before calculating the deviation, the actual impedance of the link and the design impedance of the link corresponding to each frequency point are matched accordingly. Then, the deviation is calculated using statistical methods, including average deviation and standard deviation. When calculating the average deviation, the absolute value of the impedance difference at each frequency point is first obtained, and then the average of all absolute values ​​is calculated. When calculating the standard deviation, the sum of the squares of the impedance differences at each frequency point is first obtained, and then the average is calculated and the square root is taken.

7. The method according to claim 3, characterized in that, In step S3.1, the deviation threshold can be set in two ways: a specified threshold and a proportional threshold. The specified threshold is determined by a fixed value based on the allowable error range of the link design, while the proportional threshold is determined by a fixed proportion of the link design impedance. Both methods are fine-tuned by taking into account the differences in transmission characteristics at different frequencies.

8. The method according to claim 4, characterized in that, In step S4.4, when synchronizing the impedance detection results to the memory training process, the actual impedance data and deviation data of each frequency link in the impedance detection results are first formatted, and the data is encapsulated according to the protocol format that the memory training process can recognize before being transmitted to the memory training process.

9. The method according to claim 1, characterized in that, After step S4, the impedance detection results, impedance values ​​at each frequency point, deviation data, anomaly indicators, and the location of the memory module are stored. At the same time, the detection execution time, the corresponding device identifier, and the memory channel information are also stored. This information is organized in a structured data format and stored in a designated storage unit to form a complete detection record.

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