Process chamber, PEALD equipment and process method

Abstract

The invention provides a process chamber, PEALD equipment and a process method. The process chamber includes a housing, a gate valve, and a transfer unit. A deposition cavity is formed in the shell. The gate valve is movably arranged on the shell. The gate valve has a closed state and an open state. In the closed state, the gate valve divides the deposition cavity into a precursor spraying cavity and a coating cavity. In the open state, the precursor spraying cavity and the coating cavity define a deposition cavity. And the transfer unit is configured to be capable of driving the wafer to move between the precursor spraying cavity and the coating cavity. According to the process chamber provided by the embodiment of the invention, the precursor deposition and the reaction of the plasma gas and the precursor are respectively carried out in the two isolated independent chambers, so that a product obtained after the reaction of the plasma gas and the precursor is not attached to the chamber wall of the coating chamber, and the cleanliness of the coating chamber can be improved; and moreover, rapid process switching between the same precursor and different plasma gases can be realized, the steps of preventive maintenance and chamber passivation are omitted, and the production efficiency can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a process chamber, a PEALD device, and a process method. Background Technology

[0002] In related technologies, when switching between oxide and nitride processes in the process chamber of ALD equipment, preventive maintenance and chamber passivation are usually performed. The maintenance and passivation time is relatively long, which affects the production capacity. Summary of the Invention

[0003] In view of this, the embodiments of this application aim to provide a process chamber, PEALD equipment, and process method that can achieve rapid switching between oxide and nitride processes and improve production capacity.

[0004] To achieve the above objectives, one aspect of this application provides a process chamber for atomic layer deposition, the process chamber comprising: The shell contains sedimentation cavities; A valve is movably disposed in the housing. The valve has a closed state and an open state. In the closed state, the valve divides the deposition chamber into a precursor spraying chamber and a coating chamber. In the open state, the precursor spraying chamber and the coating chamber enclose the deposition chamber. The transfer unit is configured to move the wafer between the precursor spray chamber and the coating chamber.

[0005] In some embodiments, the process chamber further includes a fixing unit disposed in one of the precursor spray chamber and the coating chamber, and a portion of the transfer unit disposed in the other of the precursor spray chamber and the coating chamber. Another portion of the transfer unit is capable of transferring the wafer to the chamber where the fixing unit is located. The fixing unit is used to receive and fix the wafer on the transfer unit.

[0006] In some embodiments, the fixing unit includes a fixing part and a connecting part. The fixing part is connected to the cavity wall of the coating cavity. The connecting part and the fixing part are telescopically engaged in a first direction. The connecting part retracts toward the fixing part in the first direction to avoid the wafer. The connecting part extends in the first direction so that the wafer is supported on the connecting part.

[0007] In some embodiments, the transfer unit includes a carrier disk and a lifting member. The carrier disk is used to carry the wafer. One end of the lifting member is connected to the carrier disk, and the other end of the lifting member is connected to the cavity wall of the precursor spraying chamber. The lifting member can drive the carrier disk to extend into the coating chamber and retract from the coating chamber into the precursor spraying chamber along a second direction, wherein the first direction is perpendicular to the second direction.

[0008] In some embodiments, the number of fixing units is at least three.

[0009] In some embodiments, the pressure difference between the coating chamber and the precursor spray chamber is positive.

[0010] In some embodiments, the precursor spraying chamber has a first nozzle on its wall, the first nozzle being used to spray out the precursor, and the number of the first nozzles is even, and greater than or equal to six.

[0011] In some embodiments, a second nozzle is provided on the cavity wall of the coating chamber, and the process chamber further includes an airflow equalization disk, which is disposed at the second nozzle.

[0012] Another aspect of this application provides a PEALD device, including the process chamber described in any of the above embodiments.

[0013] Another aspect of this application provides a process method applied to the process chamber described in any of the above claims, the process method comprising: Precursor deposition is performed on the wafer within the precursor spray chamber; The valve is opened, and the transfer unit moves the wafer to the coating chamber. The valve is closed, and plasma gas is sprayed onto the wafer inside the coating chamber, causing the plasma gas to react with the precursor on the wafer. The valve is opened, and the transfer unit moves the wafer to the precursor spray chamber. Repeat the above steps until a deposited film of the preset type is obtained.

[0014] The process chamber provided in this application embodiment uses a valve movable in the housing. When the valve is closed, it divides the deposition chamber into a precursor spraying chamber and a coating chamber. When the valve is open, the precursor spraying chamber and the coating chamber together form the deposition chamber, and the transfer unit can move the wafer between the precursor spraying chamber and the coating chamber. Thus, precursor deposition and the reaction between plasma gas and the precursor occur in two isolated independent chambers. The precursor is deposited only inside the wall of the precursor spraying chamber and not on the wall of the coating chamber. This prevents the products of the reaction between plasma gas and the precursor from adhering to the wall of the coating chamber, improving the cleanliness of the coating chamber. It also allows for rapid process switching between the same precursor and different plasma gases, eliminating the need for preventative maintenance and chamber passivation, thereby improving production efficiency. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of the PEALD device provided in the embodiments of this application; Figure 2 This is a first flow diagram of the process method provided in the embodiments of this application; Figure 3 This is a schematic diagram of the second process flow of the method provided in the embodiments of this application.

[0016] Explanation of reference numerals in the attached figures 10. Process chamber; 11. Shell; 11a. Deposition chamber; 11b. Precursor spray chamber; 11c. Coating chamber; 11d. First nozzle; 11e. Second nozzle; 11f. Feed port; 12. Valve; 13. Transfer unit; 131. Carrier tray; 132. Lifting component; 133. Top lifting component; 14. Fixing unit; 141. Fixing part; 142. Connecting part; 15. Airflow equalization plate; 16. Feed gate; 100. PEALD equipment; 20. Vacuum pump; 30. Plasma gas delivery system. Detailed Implementation

[0017] The embodiments of this application will be described in further detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate this application, but should not be used to limit the scope of this application.

[0018] In the description of the embodiments of this application, it should be noted that the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0019] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application based on the specific circumstances.

[0020] In the embodiments of this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature and the second feature are in direct contact, or that the first feature and the second feature are in indirect contact through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0021] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the embodiments of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0022] In related technologies, when switching between oxide and nitride processes in the process chamber of ALD equipment, preventive maintenance (PM) and chamber passivation are usually performed. The maintenance and passivation time is relatively long, which affects the production capacity.

[0023] Based on the above, a first aspect of this application provides a process chamber 10 for atomic layer deposition. Please refer to [link to relevant documentation]. Figure 1The process chamber 10 includes a housing 11, a gate valve 12, and a transfer unit 13. The housing 11 forms a deposition chamber 11a. The gate valve 12 is movably disposed within the housing 11. The gate valve 12 has a closed state and an open state. In the closed state, the gate valve 12 divides the deposition chamber 11a into a precursor spray chamber 11b and a coating chamber 11c. In the open state, the precursor spray chamber 11b and the coating chamber 11c enclose the deposition chamber 11a. The transfer unit 13 is configured to move the wafer between the precursor spray chamber 11b and the coating chamber 11c.

[0024] It should be noted that atomic layer deposition (ALD) is a method that deposits material onto a substrate surface layer by layer in the form of single-atom films. ALD is similar to ordinary chemical deposition (chemical vapor deposition), but in ALD, the chemical reaction of the new atomic film is directly related to the previous layer, so that each reaction deposits only one atomic layer.

[0025] The process chamber 10 in this application can be the process chamber 10 of a plasma-enhanced atomic layer deposition (PEALD) apparatus. The following description takes the process chamber 10 of a PEALD apparatus as an example.

[0026] The shell 11 of the process chamber 10 has a deposition chamber 11a, which is used to deposit precursors, and the reaction between the precursors and plasma gas also takes place in the deposition chamber 11a.

[0027] The valve 12 is movably disposed on the housing 11, meaning that the valve 12 can move relative to the housing 11.

[0028] The transfer unit 13 can be used to carry and move the wafer.

[0029] In the closed state, valve 12 divides the deposition chamber 11a into a precursor spraying chamber 11b and a coating chamber 11c, meaning valve 12 can separate the deposition chamber 11a into two independent chambers. The precursor spraying chamber 11b is used to spray and deposit the precursor, while the coating chamber 11c is used for the reaction of the precursor with the plasma gas. When valve 12 is closed, the transfer unit 13 can only be located within either the precursor spraying chamber 11b or the coating chamber 11c.

[0030] When the transfer unit 13 is in the precursor spray chamber 11b, it can spray the precursor onto the wafer on the transfer unit 13, so that the precursor is deposited on the wafer surface.

[0031] When the transfer unit 13 is in the coating chamber 11c, plasma gas can be ejected from the wafer on the transfer unit 13, causing the plasma gas to react with the precursor on the wafer and form a product compound between the plasma gas and the precursor on the wafer. The plasma gas can be, for example, oxygen, nitrogen, ammonia, or others. Furthermore, after the plasma gas reacts with the precursor on the wafer, the coating chamber 11c can be purged with an inert gas to remove excess plasma gas. The inert gas can be, for example, argon.

[0032] In the open state, the precursor spray chamber 11b and the coating chamber 11c together form the deposition chamber 11a. At this time, the transfer unit 13 can drive the wafer to move between the precursor spray chamber 11b and the coating chamber 11c.

[0033] For example, the transfer unit 13 itself can move relative to the housing 11 and be located entirely within the precursor spray chamber 11b or entirely within the coating chamber 11c.

[0034] For example, a groove is formed on one of the walls of the transfer unit 13 and the deposition chamber 11a, and a slide rail is formed on the other. The transfer unit 13 and the wall of the deposition chamber 11a are slidably engaged by the groove and the slide rail, so that the transfer unit 13 can move between the precursor spray chamber 11b and the coating chamber 11c.

[0035] The process chamber 10 provided in this application embodiment has a gate valve 12 movably disposed on the housing 11. When the gate valve 12 is closed, it divides the deposition chamber 11a into a precursor spray chamber 11b and a coating chamber 11c. With valve 12 open, the precursor spray chamber 11b and coating chamber 11c together form deposition chamber 11a. Transfer unit 13 can move the wafer between the precursor spray chamber 11b and coating chamber 11c. Thus, precursor deposition and plasma gas reaction with the precursor occur in two isolated independent chambers. The precursor is deposited only inside the chamber wall of precursor spray chamber 11b and not on the chamber wall of coating chamber 11c. This prevents the products of plasma gas reaction with the precursor from adhering to the chamber wall of coating chamber 11c, improving the cleanliness of coating chamber 11c. It also enables rapid process switching between the same precursor and different plasma gases, eliminating the need for preventive maintenance and chamber passivation, which is beneficial for improving production efficiency.

[0036] In some embodiments, please refer to Figure 1The process chamber 10 also includes a fixing unit 14. The fixing unit 14 is disposed within one of the precursor spray chamber 11b and the coating chamber 11c, and a portion of the transfer unit 13 is disposed within the other of the precursor spray chamber 11b and the coating chamber 11c. The other portion of the transfer unit 13 is capable of transferring the wafer to the chamber where the fixing unit 14 is located. The fixing unit 14 is used to receive and fix the wafer on the transfer unit 13.

[0037] It should be noted that although the transfer unit 13 and the fixing unit 14 are located in different chambers, part or all of the transfer unit 13 can be moved to the chamber where the fixing unit 14 is located, so as to transfer the wafer to the fixing unit 14, so that the fixing unit 14 can receive and fix the wafer on the transfer unit 13.

[0038] In this embodiment, by setting a fixing unit 14 and placing the transfer unit 13 and the fixing unit 14 in different chambers, that is, when the gate valve 12 is closed, the transfer unit 13 and the fixing unit 14 are always in the same chamber in the precursor spray chamber 11b and the coating chamber 11c, which can improve the situation where the reaction products of precursor and plasma gas are easily formed on the transfer unit 13, and is beneficial to improve the cleanliness of the transfer unit 13 and the cleanliness of the deposition chamber 11a.

[0039] For example, the fixing unit 14 is disposed in the precursor spray chamber 11b, and the transfer unit 13 is disposed in the coating chamber 11c. Thus, at the beginning of the process, after the wafer is placed and fixed in the fixing unit 14, the gate valve 12 is closed, and the transfer unit 13 is located in the coating chamber 11c. At this time, the precursor is sprayed onto the wafer fixed by the fixing unit 14. After the precursor is deposited, it is purged, the gate valve 12 is opened, and the transfer unit 13 located in the coating chamber 11c extends into the precursor spray chamber 11b and brings the wafer back. Inside the coating chamber 11c, the gate valve 12 is closed, and plasma gas is sprayed onto the wafer fixed by the transfer unit 13. After the plasma gas reacts with the precursor, it is purged, the gate valve 12 is opened, and the transfer unit 13 drives the wafer into the precursor spray chamber 11b. The fixing unit 14 fixes the wafer. After the transfer unit 13 returns to the coating chamber 11c, the gate valve 12 is closed, and the precursor is sprayed onto the wafer again. The above steps are repeated, and the plasma gas sprayed in the coating chamber 11c can be switched according to the process requirements.

[0040] In some embodiments, please refer to Figure 1 The fixing unit 14 includes a fixing part 141 and a connecting part 142. The fixing part 141 is connected to the cavity wall of the coating cavity 11c. The connecting part 142 is telescopically engaged with the fixing part 141 in a first direction. The connecting part 142 retracts towards the fixing part 141 in the first direction to avoid the wafer. The connecting part 142 extends in the first direction so that the wafer is supported on the connecting part 142.

[0041] The fixing part 141 is connected to the cavity wall of the coating cavity 11c. That is, in this embodiment, the fixing unit 14 is disposed in the coating cavity 11c, and the transfer unit 13 is disposed in the precursor spray cavity 11b.

[0042] It should be noted that the deposition chamber 11a of the process chamber 10 can be roughly cylindrical, prismatic, or other shapes.

[0043] This application describes an embodiment where the deposition chamber 11a of the process chamber 10 is cylindrical.

[0044] For example, the first direction may be the radial direction of the cylindrical deposition cavity 11a.

[0045] For example, Figure 1 R1 in the equation can be the first direction.

[0046] It should be noted that the form in which the fixing unit 14 supports or carries the wafer can be that the connecting part 142 of a single fixing unit 14 supports the wafer at at least three points, or that the connecting parts 142 of multiple fixing units 14 support the wafer at at least three points.

[0047] The "multiple" mentioned in the embodiments of this application refers to two or more.

[0048] The contact form between the connector 142 and the wafer can be point contact, line contact, or surface contact.

[0049] For example, the central angle corresponding to the connecting portion 142 of a single fixing unit 14 in the circumferential direction of the cylindrical deposition cavity 11a can be 5°, 10°, 15°, 20°, 25°, 30°, 60°, 90°, 120°, 180°, or 360°, etc. Wherein, a central angle of 360° corresponding to the connecting portion 142 of a single fixing unit 14 in the circumferential direction of the cylindrical deposition cavity 11a means that the fixing unit 14 is annular and arranged around the circumference of the deposition cavity 11a.

[0050] The connecting portion 142 retracts towards the fixing portion 141 along the first direction to avoid the wafer. Specifically, when the transfer unit 13 transfers the wafer to the fixing unit 14, interference between the wafer and the connecting portion 142 can be avoided. In addition, when the fixing unit 14 transfers the wafer to the transfer unit 13, the connecting portion 142 retracts towards the fixing portion 141 along the first direction, which can release the wafer and facilitate the transfer unit 13 to directly support and transfer the wafer from below.

[0051] Thus, through the telescopic cooperation between the connecting part 142 and the fixing part 141 along the first direction, the connecting part 142 can extend inward along the radial direction of the deposition chamber 11a into the fixing part 141 or retract outward into the fixing part 141. When the connecting part 142 retracts outward into the fixing part 141 along the first direction, the inner circle dimension defined by the fixing unit 14 becomes larger than the radial dimension of the wafer. This allows the transfer unit 13 to carry the wafer through the fixing unit 14. After the wafer passes through the fixing unit 14 and is positioned above it, the connecting part 142 extends outward along the first direction below the wafer, and the transfer unit 13 moves towards the precursor spray chamber 11b, allowing the wafer to rest on the connecting part 142. This facilitates the transfer unit 13 in transferring the wafer from the fixing unit 14 and reduces the probability of damage to the wafer during the transfer process.

[0052] In some embodiments, the number of fixing units 14 is at least three.

[0053] The number of fixed units 14 is unlimited; it can be three, four, five, six, seven, or eight, etc.

[0054] The number of fixing units 14 is at least three, which can improve the stability and reliability of the wafer supported by the fixing units 14.

[0055] In some embodiments, please refer to Figure 1 The transfer unit 13 includes a carrier tray 131 and a lifting member 132. The carrier tray 131 is used to carry the wafer. One end of the lifting member 132 is connected to the carrier tray 131, and the other end of the lifting member 132 is connected to the cavity wall of the precursor spray chamber 11b. The lifting member 132 can drive the carrier tray 131 to extend into the coating chamber 11c and retract from the coating chamber 11c into the precursor spray chamber 11b along a second direction, wherein the first direction is perpendicular to the second direction.

[0056] The carrier tray 131 is used to carry the wafer. Exemplarily, the transfer unit 13 further includes a lifting member 133, which is disposed on the carrier tray 131 and is capable of moving up and down in a second direction. The lifting member 133 switches between two states: protruding from the upper top surface of the carrier tray 131 and not protruding from the upper top surface of the carrier tray 131. When the lifting member 133 protrudes from the upper top surface of the carrier tray 131, the wafer can be placed on the lifting member 133 first. Then, the lifting member 133 descends until it is flush with the upper top surface of the carrier tray 131 or recessed into the upper top surface of the carrier tray 131, at which point the carrier tray 131 takes over carrying the wafer.

[0057] When the transfer unit 13 transfers the wafer to the fixing unit 14, the lifting member 133 can rise relative to the carrier 131 and lift the wafer, so that the connecting part 142 of the fixing unit 14 can extend under the wafer. This simplifies the wafer transfer operation between the transfer unit 13 and the fixing unit 14 and improves the stability and reliability of the transfer.

[0058] For example, the lifting member 133 may be a PIN pin.

[0059] For example, the number of lifting components 133 is at least 3.

[0060] For example, the second direction may be the length direction of the cylindrical deposition cavity 11a.

[0061] For example, the second direction can be the top-bottom direction of the deposition cavity 11a, or the up-down direction.

[0062] For example, Figure 1 R2 in the equation can be the second direction.

[0063] For example, one end of the lifting member 132 is connected to the side wall of the precursor spray chamber 11b away from the coating chamber 11c along the second direction, and the other end is connected to the carrier plate 131, and can drive the carrier plate 131 to move up and down along the second direction.

[0064] For example, the lifting member 132 is connected to an external cylinder, which can push the lifting member 132 to move up and down.

[0065] In this embodiment, the precursor spraying chamber 11b and the coating chamber 11c can be distributed along the second direction. By setting the lifting member 132 to lift the carrier 131 along the second direction, the carrier 131 can be extended to the coating chamber 11c or retracted from the coating chamber 11c to the precursor spraying chamber 11b. This can shorten the lifting path, reduce the movement time of the transfer unit 13, and improve production efficiency.

[0066] In some embodiments, the pressure difference between the coating chamber 11c and the precursor spray chamber 11b is positive.

[0067] Here, the pressure in the coating chamber 11c and the pressure in the precursor spray chamber 11b both refer to the air pressure inside the chamber. Typically, both the coating chamber 11c and the precursor spray chamber 11b are in a vacuum state, that is, an environment with air pressure lower than normal atmospheric pressure.

[0068] Thus, the air pressure inside the coating chamber 11c is greater than the air pressure inside the precursor spray chamber 11b, causing the gas inside the coating chamber 11c to tend to flow towards the precursor spray chamber 11b. This reduces the probability of the precursor in the precursor spray chamber 11b entering the coating chamber 11c, improves the cleanliness of the cavity wall of the coating chamber 11c, reduces the frequency of preventive maintenance and passivation of the coating chamber 11c, and further improves production efficiency.

[0069] In some embodiments, please refer to Figure 1 The precursor spray chamber 11b has a first nozzle 11d on its wall. The first nozzle 11d is used to spray out the precursor. The number of first nozzles 11d is even and greater than or equal to six.

[0070] For example, the number of first nozzles 11d can be six, eight, ten, twelve, fourteen, sixteen, eighteen, or twenty, etc., without limitation.

[0071] Multiple first nozzles 11d surround the cavity wall of the precursor spray chamber 11b and are spaced apart.

[0072] Here, by limiting the number of first nozzles 11d to an even number, and greater than or equal to six, the uniformity of the first nozzles 11d spraying precursors on the wafer can be improved.

[0073] In some embodiments, please refer to Figure 1 The coating chamber 11c has a second nozzle 11e on its cavity wall. The process chamber 10 also includes an airflow equalization disk 15. The airflow equalization disk 15 is located at the second nozzle 11e.

[0074] Here, by setting an airflow equalization disk 15 at the second nozzle 11e, the uniformity of the plasma gas injected from the second nozzle 11e can be improved, and the reaction efficiency between the plasma gas and the precursor can be improved.

[0075] For example, the second nozzle 11e is disposed on the side wall of the coating chamber 11c away from the precursor spray chamber 11b along the second direction.

[0076] In some embodiments, please refer to Figure 1 The process chamber 10 also includes a feeding door 16, and the housing 11 has a feeding port 11f, with the feeding door 16 located at the feeding port 11f.

[0077] Here, by opening the feed gate 16 to open the feed port 11f, it is convenient to remove the wafer from the deposition chamber 11a or to place the wafer from outside the deposition chamber 11a. By closing the feed gate 16 to seal the feed port 11f, the sealing performance of the deposition chamber 11a is improved, the leakage of gas inside the deposition chamber 11a is reduced, and the safety of the production environment is enhanced.

[0078] For example, the feed port 11f is located in the housing 11 portion corresponding to the precursor spray chamber 11b, which allows the newly placed wafer to be deposited with the precursor directly without additional operation, thereby simplifying the process steps and improving production efficiency.

[0079] A second aspect of this application provides a PEALD device 100, please refer to... Figure 1 The PEALD device 100 includes the process chamber 10 provided in any embodiment of this application.

[0080] Exemplarily, the PEALD device 100 also includes a vacuum pump 20 and a plasma gas delivery system 30. The vacuum pump 20 is connected to the precursor spray chamber 11b and the coating chamber 11c, respectively, and provides negative pressure to the precursor spray chamber 11b and the coating chamber 11c. The plasma gas delivery system 30 is connected to the second nozzle 11e and selectively introduces plasma gas into the coating chamber 11c.

[0081] It should be noted that PEALD is an abbreviation for Plasma Enhanced Atomic Layer Deposition, and PEALD equipment 100 refers to a plasma enhanced atomic layer deposition equipment.

[0082] For example, the PEALD device 100 also includes a precursor delivery system connected to the first nozzle 11d to eject precursors from the wafer.

[0083] For example, the plasma gas delivery system 30 is connected to the second nozzle 11e and is capable of delivering different plasma gases, such as nitrogen, oxygen, ammonia or argon.

[0084] The PEALD equipment 100 provided in this application, based on the advantages of the aforementioned process chamber 10, has the characteristic of improving production efficiency.

[0085] A third aspect of this application provides a process method applied to the process chamber 10 provided in any embodiment of this application. Please refer to [link to relevant documentation]. Figure 2 and Figure 3 The process methods include: S01: Precursor deposition is performed on the wafer within the precursor spray chamber; S02: Open the valve, and the transfer unit moves the wafer to the coating chamber; S03: Close the valve and spray plasma gas into the wafer in the coating chamber to make the plasma gas react with the precursor on the wafer. S04: Open the valve, and the transfer unit moves the wafer to the precursor spray chamber; S05: Repeat the above steps until a pre-defined type of deposited film is obtained.

[0086] The pre-defined type of deposited thin film can be a thin film containing at least one compound such as oxides or nitrides of precursor elements.

[0087] Prior to step S01, the process method further includes: S00: Place the wafer on the transfer unit inside the precursor spray chamber.

[0088] Step S00 may specifically include: The feeding door is opened, the lifting device rises, and the wafer is placed on the lifting device through the feeding port. Then the feeding door is closed. The lifting device descends, and the wafer falls onto the carrier disk.

[0089] Step S01 may include: The first nozzle ejects the precursor, causing the precursor to deposit on the wafer. After the precursor is deposited, the first nozzle purges the remaining precursor and discharges the excess precursor from the precursor spray chamber.

[0090] Step S02 may include: Open the valve, and the connecting part retracts towards the fixing part; The carrier disk rises along the second direction until the wafer moves onto the connector; The connecting portion extends out of the fixing portion along the first direction and extends to the bottom of the wafer; The carrier disk descends along the second direction, and after the wafer is supported on the connector, the carrier disk continues to descend along the second direction until it returns to the precursor spray chamber.

[0091] After step S03, the process method may further include: After the plasma gas reacts with the precursor on the wafer, the second nozzle is purged with inert gas to remove the remaining plasma gas from the coating cavity.

[0092] In step S05, the precursor that the wafer is sprayed again in the precursor spraying chamber needs to be the same as the one before. If the precursor is different, the deposition chamber needs to be opened for cleaning and passivated. However, since there is only the precursor on the chamber wall of the precursor spraying chamber and no precursor and plasma gas products, preventive maintenance is not required, which can shorten maintenance and cleaning time and increase production capacity.

[0093] In step S05, after the wafer is sprayed with the precursor again and transferred to the coating chamber, since there is no precursor on the chamber wall and no precursor and plasma gas products, the same plasma gas as before can be sprayed, or other types of plasma gas can be sprayed. Switching plasma gas allows for process switching. At this time, it is not necessary to open and clean the deposition chamber, nor is it necessary to perform preventive maintenance and passivation treatment on the deposition chamber. This enables rapid switching between oxide, nitride, or other compound processes.

[0094] For example, in one embodiment, the process includes: S00: Open the feeding door, the lifting device rises, the wafer is placed on the lifting device through the feeding port, and then the feeding door is closed; S10: The lifting device descends, and the wafer falls onto the carrier disk; S20: The first nozzle ejects the precursor, causing the precursor to deposit on the wafer; S30: After the precursor is deposited, the first nozzle purges the remaining precursor and discharges the excess precursor from the precursor spray chamber; S40: Open the valve, and the connecting part retracts towards the fixed part; S50: The carrier disk rises along the second direction until the wafer moves onto the connector; S60: The lifting component is raised; S70: The connecting part extends out of the fixing part along the first direction and extends to the bottom of the wafer; S80: Lifting component descends; S90: The carrier disk descends along the second direction. After the wafer is supported on the connector, the carrier disk continues to descend along the second direction until it returns to the precursor spray chamber; S100: Close the valve and spray plasma gas onto the wafer in the coating chamber to allow the plasma gas to react with the precursor on the wafer. S110: After the plasma gas reacts with the precursor on the wafer, the second nozzle is purged with inert gas to remove the remaining plasma gas and discharge the excess plasma gas in the coating cavity. S120: Open the valve, and the transfer unit moves the wafer to the precursor spray chamber.

[0095] After step S100, the process method further includes: S130: Close the valve and perform precursor deposition on the wafer in the precursor spray chamber; S140: Open the valve, and the transfer unit moves the wafer to the coating chamber; S150: Close the valve and, according to process requirements, spray the same or different types of plasma gas into the wafer in the coating chamber, where it reacts with the precursor.

[0096] The above description is merely a preferred embodiment of this application and is not intended to limit the application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A process chamber for atomic layer deposition, characterized in that, The process chamber includes: The shell contains sedimentation cavities; A valve is movably disposed in the housing. The valve has a closed state and an open state. In the closed state, the valve divides the deposition chamber into a precursor spraying chamber and a coating chamber. In the open state, the precursor spraying chamber and the coating chamber enclose the deposition chamber. The transfer unit is configured to move the wafer between the precursor spray chamber and the coating chamber.

2. The process chamber according to claim 1, characterized in that, The process chamber further includes a fixing unit, which is disposed in one of the precursor spray chamber and the coating chamber. A portion of the transfer unit is disposed in the other of the precursor spray chamber and the coating chamber. Another portion of the transfer unit is capable of transferring the wafer to the chamber where the fixing unit is located. The fixing unit is used to receive and fix the wafer on the transfer unit.

3. The process chamber according to claim 2, characterized in that, The fixing unit includes a fixing part and a connecting part. The fixing part is connected to the cavity wall of the coating cavity. The connecting part and the fixing part are in telescopic cooperation along a first direction. The connecting part retracts towards the fixing part along the first direction to avoid the wafer. The connecting part extends along the first direction so that the wafer is supported on the connecting part.

4. The process chamber according to claim 3, characterized in that, The transfer unit includes a carrier tray and a lifting member. The carrier tray is used to carry the wafer. One end of the lifting member is connected to the carrier tray, and the other end of the lifting member is connected to the cavity wall of the precursor spraying chamber. The lifting member can drive the carrier tray to extend into the coating chamber and retract from the coating chamber to the precursor spraying chamber along a second direction, wherein the first direction is perpendicular to the second direction.

5. The process chamber according to claim 2, characterized in that, The number of fixed units is at least three.

6. The process chamber according to claim 1, characterized in that, The pressure difference between the coating chamber and the precursor spraying chamber is positive.

7. The process chamber according to claim 1, characterized in that, The precursor spray chamber has a first nozzle on its wall. The first nozzle is used to spray out the precursor. The number of the first nozzles is even and greater than or equal to six.

8. The process chamber according to claim 1, characterized in that, The coating chamber has a second nozzle on its wall, and the process chamber also includes an airflow equalization disk, which is located at the second nozzle.

9. A PEALD device, characterized in that, Includes the process chamber as described in any one of claims 1 to 8.

10. A process method applied to the process chamber according to any one of claims 1 to 8, characterized in that, The process includes: Precursor deposition is performed on the wafer within the precursor spray chamber; The valve is opened, and the transfer unit moves the wafer to the coating chamber. The valve is closed, and plasma gas is sprayed onto the wafer inside the coating chamber, causing the plasma gas to react with the precursor on the wafer. The valve is opened, and the transfer unit moves the wafer to the precursor spray chamber. Repeat the above steps until a deposited film of the preset type is obtained.

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