MEMS sensor component and MEMS inertial sensor

Abstract

The invention relates to a microelectromechanical sensor component (1), comprising: a substrate (2) having a substrate surface (2a); a seismic mass (4) connected to the substrate (2) and movable relative to the substrate (2) by means of suspension springs (3), the seismic mass being deflectable in a deflection direction (A) running perpendicular to the substrate surface (2a); and an evaluation electrode (5) arranged between the substrate and the seismic mass for capacitively detecting a deflection of the seismic mass (4) and providing a capacitive useful signal, the microelectromechanical sensor component (1) further comprising a reference electrode (6) having a plurality of reference electrode segments (6a), which form a reference electrode frame (6b) surrounding the seismic mass (4) at least in some sections, the reference electrode (6) is anchored on the substrate (2) via at least two connection points (7), and a respective reference electrode section (6a) extends overhanging between the two connection points (7); and a reference counter electrode (9) arranged between the substrate (2) and the reference electrode (6) for interacting with the reference electrode to provide a capacitive reference signal. The invention also relates to a micro-electromechanical inertial sensor (20) having such a micro-electromechanical sensor component.

Description

Technical Field

[0001] This invention relates to a microelectromechanical sensor component. It also relates to a microelectromechanical inertial sensor. Background Technology

[0002] Microelectromechanical sensor components and microelectromechanical inertial sensors are known in the prior art. Microelectromechanical systems are also abbreviated as MEMS.

[0003] To detect acceleration, microelectromechanical sensor components may include a substrate and a seismic mass deflectable relative to the substrate, the deflection of which can be detected capacitively by means of evaluation electrodes. Depending on the design of the microelectromechanical sensor components, they can be configured to detect deflection of the seismic mass of the sensor component parallel to and / or perpendicular to the substrate surface. For detecting deflection of the seismic mass perpendicular to the substrate surface, various measurement principles are known for the corresponding sensor components (identified according to three-dimensional spatial axes x, y, z, also referred to as z-accelerometer components). For example, the seismic mass can be constructed as a pendulum structure with an asymmetrical configuration of pendulum arms and suspended by means of torsion springs on two spaced-apart evaluation electrodes, which can capacitively detect the deflection of the pendulum arms from a rest position. Furthermore, it is known to arrange the seismic mass translatably above the evaluation electrodes by means of suspension springs, such that the seismic mass does not experience tilting motion during deflection, but rather experiences translational displacement away from or towards the substrate surface. An example of such a sensor component with a seismic mass having translational motion perpendicular to the substrate surface can be found in US 6,892,576B2. In order to differentially assess capacitance changes associated with translational deflection of seismic mass, a so-called top electrode can be positioned on the side of the seismic mass away from the assessment electrode, or a reference electrode can be positioned between the substrate and a substantially immovable anchored portion of the seismic mass. Summary of the Invention

[0004] According to the features of independent claim 1, a microelectromechanical sensor component is proposed, comprising a substrate with a substrate surface, a seismic mass connected to the substrate and movable relative to the substrate by a suspension spring, wherein the seismic mass is deflectable in a deflection direction extending perpendicular to the substrate surface, and an evaluation electrode disposed between the substrate and the seismic mass for capacitively detecting the deflection of the seismic mass and providing a useful capacitance signal, wherein the microelectromechanical sensor component further comprises a reference electrode with a plurality of reference electrode segments forming at least segmentally surrounding the seismic mass, wherein the reference electrode is anchored to the substrate by means of at least two attachment points, and the respective reference electrode segments extend cantilevered between the two attachment points, wherein the microelectromechanical sensor component has a reference counter electrode disposed between the substrate and the reference electrode for interacting with the reference electrode to provide a capacitance reference signal.

[0005] In short, a method is proposed to surround a seismic mass with reference electrodes on multiple (especially all) lateral planes for differential capacitance assessment. This provides a particularly accurate reference signal, taking into account possible mechanical stress effects during the operation of the sensor assembly, thereby ensuring high offset stability in signal assessment. For example, mechanical stress on the sensor assembly can cause localized or widespread substrate bending, which in turn causes a change in the fundamental distance between the assessment electrode and the seismic mass. This distance change can be correlated with a corresponding offset of the useful signal from the assessment electrode. If the seismic mass is surrounded by reference electrodes, the substrate bending also affects the reference electrode segment in the relevant region, causing the reference signal to undergo a corresponding change, and the offset of the useful signal can be approximated by the change in the reference signal. Therefore, the differential signal between the useful signal and the reference signal remains small when mechanical stress occurs, and the sensor assembly is relatively offset stable. In other words, localized stress-related adjustments at the reference electrode level can be obtained through the mechanical interaction between the reference electrode and the substrate surface. By constructing the reference electrode as a reference electrode frame, the microelectromechanical sensor assembly can be compactly implemented while still effectively realizing the proposed effects on differential capacitance assessment. The reference electrode can be arranged in a functional layer with the same seismic quality, thereby reliably avoiding the associated offset effect, especially compared to the spaced top electrode.

[0006] Microelectromechanical sensor components can be, for example, components produced using semiconductor technology that have mechanical and electrical microstructures. Due to their microstructure implementation, microelectromechanical sensor components can be suitable for implementation as a system-on-a-chip (SoC). As sensor components, microelectromechanical sensor components can be configured to detect physical quantities. The sensor components described within the scope of this application can in particular be configured to detect translational acceleration in a direction-dependent manner as a physical quantity.

[0007] The substrate can be a planar semiconductor technology carrier structure. For example, the substrate can be a silicon wafer. The substrate has a substrate surface on the front side and a back surface on the opposite back side. The front side of the substrate can form the active side of the substrate, on which the mechanical and electrical microstructures of the sensor components are arranged.

[0008] The seismic mass is connected to a substrate and is movable relative to the substrate via suspension springs. The seismic mass can be a mechanical structure of a sensor component configured to interact with the physical quantity to be detected (especially acceleration force), and its deflection can induce a change in capacitance signal representing the physical quantity at the evaluation electrodes. The seismic mass can be anchored to the substrate via one or more connection points. For example, the seismic mass can be deflected from a defined rest position, such that the relative deflection of the seismic mass to the rest position can be used to detect the physical quantity. The mobility of the seismic mass is achieved via one or more suspension springs, wherein the degrees of freedom of the seismic mass can be predetermined by a suitable spring design. The suspension springs can be fixed at the connection point between the seismic mass and the substrate with a first spring end and at the movable seismic mass with a second spring end.

[0009] The seismic mass can be deflected in a deflection direction that extends substantially perpendicular to the substrate surface. In short, the seismic mass can be implemented as moving towards and away from the substrate surface. In particular, the seismic mass can be translated and deflected in the aforementioned deflection direction. Compared to a pendulum structure, a translationally deflectable seismic mass has reduced mechanical noise (also known as Brownian noise) because not only the asymmetric mass portion, but the entire movable seismic mass contributes to the mechanical sensitivity of the microelectromechanical sensor component. Therefore, by utilizing a translationally displaceable seismic mass, a good signal-to-noise ratio can be achieved for the microelectromechanical sensor component.

[0010] The microelectromechanical sensor component also includes evaluation electrodes disposed between a substrate and a seismic mass for capacitive detection of seismic mass deflection and providing a useful capacitance signal. The evaluation electrodes can be conductive, fixed electrode elements substantially immovably fixed to the substrate. The evaluation electrodes can be spaced apart from and electrically insulated from the substrate by an insulating layer (e.g., through an oxide layer). The evaluation electrodes can be connected to an electrically conductive rail system of the microelectromechanical sensor component, which in turn can be electrically connected to evaluation circuitry. The evaluation electrodes can extend particularly below a movable section of the seismic mass. The evaluation electrodes can be positioned away from the mechanical connection point of the seismic mass.

[0011] The microelectromechanical sensor component also has a reference electrode with multiple reference electrode segments. The reference electrode works in conjunction with a reference counter electrode to provide a capacitive reference signal, enabling the evaluation of the useful signal and the reference signal into a differential total signal. Using differential evaluation, physical quantities can be detected more accurately, unaffected by, for example, fluctuating environmental conditions, manufacturing tolerances, and mechanical stress effects within the sensor component. The reference electrode configuration is substantially immovable. In other words, the reference electrode will not deflect under acceleration forces. The reference electrode segments at least segmentally frame the seismic mass, i.e., multiple (especially all) lateral sides surrounding the seismic mass. The lateral sides of the seismic mass can be understood herein as sides of the seismic mass that do not coincide with the lower side facing the substrate surface or the upper side facing away from the substrate surface, but rather lie on the outer surface connecting the upper and lower sides. The lateral surfaces of the seismic mass can, in particular, extend substantially perpendicular to the substrate surface. The reference electrode frame at least segmentally surrounding the seismic mass may include reference electrode frames that can be selectively continuous or discontinuous, as will be further explained in conjunction with appropriate embodiments. The reference electrode is anchored to the substrate via at least two attachment points. By purposefully selecting the number and positioning of the attachment points of the reference electrode, it can be ensured that mechanical stress affects the distance changes of the reference capacitance and the evaluation capacitance (i.e., below the seismic mass) in a similar manner. Therefore, when mechanical stress occurs, the differential signal, which is the difference between the useful signal and the reference signal, remains small, or in other words, the sensor is relatively offset stable. The attachment points can represent a local fixation of the reference electrode, with no other degrees of freedom, making the reference electrode immovably connected to the substrate. Currently, a reference electrode segment refers to the region where the reference electrode extends cantilevered between two attachment points. Therefore, the reference electrode segment can be configured as a bridge. If substrate bending exists in the substrate region where the attachment points are located, the substrate bending is at least approximately transmitted to the cantilevered portion of the reference electrode segment, resulting in potentially locally different distances between the reference electrode and the reference electrode, which leads to variations in the reference signal. Using the variations in the reference signal, the variations in the useful signal caused by the local distance changes between the seismic mass and the evaluation electrode (caused by substrate bending) can be at least approximately compensated for. Since the reference electrode is primarily cantilevered above the substrate, when substrate bending occurs due to mechanical stress, not only will the fundamental distance between the evaluation electrode and the seismic mass change, but at least regionally, the fundamental distance between the reference electrode and the reference counter electrode will also change. Because the reference electrode is framed around the seismic mass, very different forms of substrate bending (e.g., with respect to different directions and combinations thereof, and with respect to different orders of substrate bending, such as quadratic or cubic) can occur without causing significant shift changes. Therefore, the effect of substrate bending can be said to be compensated for relative to the shift signal. Here, the attachment points of the reference electrode can be selected based on the seismic mass, the geometry of the chip, and / or the housing used to implement the microelectromechanical component sensor.In principle, there is a high degree of design freedom in choosing the ratio between the length and width of the reference electrode, as well as in the location and number of mechanical connection points for seismic mass, the geometry and number of suspension springs, and the size and location of the evaluation electrode.

[0012] The reference electrode can be a conductive, fixed electrode element that is substantially immovably fixed to the substrate. The reference electrode can be spaced apart from and electrically insulated from the substrate by an insulating layer (e.g., an oxide layer). The reference electrode can be connected to an electrically conductive rail system of a microelectromechanical sensor component, which in turn can be electrically connected to evaluation circuitry.

[0013] According to one embodiment, the reference electrode section can be constructed and arranged in the microelectromechanical sensor component such that the average distance change between the evaluation electrode and the seismic mass (relative to the static position of the seismic mass) caused by mechanical stress in the sensor component deviates by a maximum of 25% from the average distance change between the reference electrode and the reference electrode. This allows for very good compensation for stress-induced changes in the useful signal by means of a corresponding change in the reference signal. Specifically, the reference electrode section can be constructed and arranged in the microelectromechanical sensor component such that the average distance change between the evaluation electrode and the seismic mass deviates by a maximum of 15%, particularly 5%, from the average distance change between the reference electrode and the reference electrode. Ideally, the average distance change between the evaluation electrode and the seismic mass and the average distance change between the reference electrode and the reference electrode can be consistent. The average distance change can correspond to the sum of the distance changes observed along the evaluation electrode or the reference electrode divided by the number of observed distance changes. To achieve this relationship between average distance variations, various component-specific parameters need to be considered, such as those related to geometry, dimensional design, material properties, conductor rail systems, chip, packaging, and conductor plate design, as well as other conditions and parameters affecting the potential mechanical stresses of the sensor components, such as those implemented in inertial sensors. To determine the appropriate construction and arrangement of the reference electrode segment to achieve comparable average distance variations in the seismic mass and the reference electrode region, calculations, simulation models, or actual tests can be performed, for example, based on specific product specifications.

[0014] According to one embodiment, the reference electrode segment may extend parallel to the outer edge of the seismic mass. Thus, the mechanical stress effect along the seismic mass can affect the reference electrode in a similar manner, allowing for a change in the reference signal that substantially corresponds to a change in the useful signal. The outer edge of the seismic mass refers to its lateral outer boundary, which may define the contour (e.g., rectangular or square contour) of the seismic mass in a plane parallel to the substrate surface. The parallel extension of the reference electrode segment can be understood in particular as the corresponding longitudinal extension of the reference electrode segment (which may correspond to the maximum extension direction of the reference electrode segment parallel to the substrate surface) extending parallel to the outer edge of the seismic mass. Furthermore, the reference electrode segment may be positioned at a predetermined distance parallel to the corresponding nearest outer edge extension of the seismic mass. This predetermined distance may, for example, be smaller than the width extension of the associated reference electrode segment that extends parallel to the substrate surface and perpendicular to the longitudinal extension.

[0015] According to one embodiment, the effective capacitive electrode area of ​​the reference electrode can deviate from the effective capacitive electrode area of ​​the evaluation electrode by a maximum of 10%. Specifically, the effective capacitive electrode area of ​​the reference electrode can deviate from the effective capacitive electrode area of ​​the evaluation electrode by a maximum of 5%. Ideally, the effective capacitive electrode areas of the reference electrode and the evaluation electrode can be identical. This minimizes the offset of the total signal from the differential evaluation of the useful signal and the reference signal. In short, by appropriately matching the electrode areas, the aim is to ensure that, at the resting position of the seismic mass, the detected reference signal value substantially corresponds to the detected useful signal value, so that, ideally, a representative total signal is obtained only when the seismic mass deflects. In the case of multiple evaluation electrode segments, the effective capacitive electrode area of ​​the evaluation electrode can correspond to the sum of the effective capacitive electrode areas of each evaluation electrode segment. The effective capacitive electrode area of ​​the reference electrode can correspond to the sum of the effective capacitive electrode areas of each reference electrode segment.

[0016] According to one embodiment, the reference electrode segments can form a coherent reference electrode frame. In other words, the reference electrodes can continuously surround the seismic mass. Therefore, the reference electrode segments can form a closed reference electrode frame. A coherent reference electrode frame has the advantages of simple fabrication and a large reference electrode area to obtain a significant reference signal. Furthermore, a relatively large area of ​​components that may be affected by mechanical stress can be used to influence the reference signal. According to one configurational feasibility, the reference electrode segments can extend parallel to the outer edge along the entire length of the outer edge of the seismic mass.

[0017] According to one embodiment, the reference electrode segments can form a segmented, discontinuous reference electrode frame. In other words, the reference electrode can surround the seismic mass segmentally only, with at least one discontinuity provided in the form of free space between two reference electrode segments. Therefore, the reference electrode segments can form an open reference electrode frame. For example, when there are relatively small evaluation electrodes and the effective electrode areas of the capacitances, as previously described, need to be matched, the segmented, discontinuous reference electrode frame can have the advantage of reduced effective electrode area. Furthermore, for example, conductor rails can be guided to the evaluation electrode through the discontinuities in the reference electrode frame without parasitic capacitance. Moreover, the reference electrode segments are more mechanically separated from each other, allowing stress effects to be detected spatially in a limited manner through localized bending of the reference electrodes. According to one configurational feasibility, the reference electrode segments can extend parallel to the outer edge segments of the seismic mass, wherein free outer edge segments are provided without parallel extending reference electrode segments.

[0018] According to the extended scheme, the discontinuous reference electrode frame can have at least one discontinuity on the longitudinal side between two corner regions of the reference electrode frame. A corner region can be understood here as a segment of the reference electrode frame where a first portion of the reference electrode segment transitions at an angle (especially a right angle) to a second portion of the reference electrode segment, or where a first reference electrode segment transitions at an angle (especially a right angle) to a second reference electrode segment, wherein the attachment point of the reference electrode is arranged between the first and second reference electrode segments. The corner regions of the reference electrode frame can be connected to each other via straight longitudinal sides. If a discontinuity in the reference electrode frame is provided on such a longitudinal side, then, for example, a conductor rail can be easily guided to the evaluation electrode without parasitic capacitance. Furthermore, for example, an angled reference electrode frame portion can exist between two discontinuities provided on different longitudinal sides, the reference electrode frame portion having two principal extension directions perpendicular to each other (parallel to the substrate surface), thus allowing for precise distance variation in response to multidimensional mechanical stress effects (especially substrate bending). Depending on the feasibility of a configuration, at least one discontinuity can be provided on each of all longitudinal sides.

[0019] Alternatively or additionally, according to the extended scheme, the discontinuous reference electrode frame may have at least one discontinuity in the corner regions of the reference electrode frame. For example, a gap may be provided between two reference electrode segments facing each other at right angles. In particular, the discontinuity may be so obvious that the discontinuous corner regions of the reference electrode frame themselves do not exist, i.e., the angular transition between or between portions of the reference electrode segments is completely abandoned. Depending on the feasibility of a configuration, at least one discontinuity may be provided in each of the corner regions. If all corner regions of the reference electrode frame are omitted in this way, only straight reference electrode segments exist along the longitudinal side of the seismic mass. This geometrically simplified reference electrode frame is easy to manufacture and, if necessary, can ensure good mechanical decoupling of the reference electrode segments.

[0020] According to one embodiment, the reference electrode may have at least four attachment points. This ensures a particularly stable attachment between the reference electrode and the substrate. For example, four or eight attachment points can ensure an advantageous symmetry in arrangement about the x-axis and y-axis parallel to the substrate surface. For example, the attachment points may be uniformly distributed on the reference electrode frame such that reference electrode segments extending between the attachment points can have the same capacitively effective single electrode area.

[0021] According to one embodiment, the reference electrode can have up to eight attachment points. This ensures a sufficiently large overhanging reference electrode section with a capacitively effective reference electrode area, which can be used to compensate for useful signal variations caused by stress on the evaluation electrode. The up to eight attachment points can be regularly distributed. In particular, when the seismic mass has a rectangular or square basic shape, two attachment points of the reference electrode can be located on each longitudinal side of the seismic mass. The two attachment points on each longitudinal side can divide the reference electrode frame on the longitudinal side into three equal sections, or they can be closer to the center of the reference electrode extending particularly parallel to the outer edge of the seismic mass, such that the middle section is smaller than the two outer sections of the reference electrode. In this arrangement, when substrate bending occurs, the distance variation in the corner regions of the reference electrode frame can be less than the distance variation in the arrangement described below, which has correspondingly centrally arranged attachment points on the longitudinal sides, because the distance variation increases with increasing lateral distance to the attachment points. Based on the specific design of the microelectromechanical sensor component regarding the material, geometry, and size of the sensor component structure, and depending on the environment of the sensor component (e.g., chip, package, or circuit board), different compensation effects can be purposefully set by varying the positioning of the attachment points.

[0022] According to one embodiment, the reference electrode may have at most two attachment points. This provides a reference electrode with a particularly large effective capacitive reference electrode area, enabling the acquisition of a significant reference signal. Furthermore, if the effective capacitive electrode areas of the reference electrode and the evaluation electrode are matched, the evaluation electrode can also be configured with a correspondingly large area to obtain a significant useful signal. For example, a reference electrode with two attachment points can be advantageous when the chip arranged on and / or the housing in which the sensor component is mounted has an elongated shape, because stress-induced effects will occur in the x-axis direction, which is significantly different from those in the y-axis direction perpendicular to it.

[0023] According to one embodiment, at least one attachment point can be arranged in a corner region of the reference electrode frame. This creates a stable reference electrode frame with good mechanical interaction with the substrate surface, facilitating localized stress-related adjustments at the reference electrode level. Depending on configurational feasibility, one attachment point can be provided in each corner region of the reference electrode frame.

[0024] According to one embodiment, at least one attachment point can be arranged on the longitudinal side between two corner regions of the reference electrode frame. This allows, for example, focus to be placed on the angled reference electrode segments to better map multidimensional stress or bending effects with the mechanically responsive reference electrode segments. Furthermore, the manufacture of such attachment points can be simplified because it is not necessary to arrange them with particular precision in the angled corner regions.

[0025] According to one embodiment, the evaluation electrode can have a regular cross shape. For example, the evaluation electrode can have four symmetrically arranged cross arms. The cross arms can extend between mechanical connection points, by means of which the seismic mass is anchored to the substrate. For example, the cross arms can extend to attachment points of the reference electrode frame. The evaluation electrode can be aligned below the center of a movable region of the seismic mass. The cross shape can be point-symmetric and / or axisymmetric. Using an evaluation electrode with a regular cross shape, microelectromechanical sensor components with electrode shapes that are advantageous for measurement technology can be provided, which are capable of uniformly detecting the deflection of the seismic mass in different spatial directions, and whose effective capacitive electrode area can be easily matched to the effective capacitive electrode area of ​​the reference electrode.

[0026] According to the extension scheme, the evaluation electrode can have an extension section molded onto a regular cross shape. For example, the cross arms can transition into the cross arms at their ends opposite the center of the cross shape. The evaluation electrode can be constructed symmetrically by means of the extension section, for example, in a way that two opposing cross arms have congruently shaped cross arms, such that the geometry of the evaluation electrode can be divided into two congruent mirror halves along an axis of symmetry extending through the center of the cross shape. With the extension section, the effective capacitive electrode area of ​​the evaluation electrode can be easily matched with the effective capacitive electrode area of ​​the reference electrode. Furthermore, by increasing the electrode area relative to the cross shape, a more significant useful signal can be achieved with good area utilization, for example, when the mechanical connection points of the seismic mass impede the extension of the cross arms. In addition, the extension section can also advantageously capacitively monitor longitudinally shaped seismic masses having a rectangular basic shape with a length greater than its width.

[0027] According to one embodiment, the seismic mass may have at least two recesses, wherein at least corresponding attachment points of the reference electrode are arranged in the respective recesses of the seismic mass. Therefore, the attachment points of the reference electrode can be spatially moved to the interior region of the seismic mass via attachment arms extending from the reference electrode frame toward the geometric center of the seismic mass. Through the recesses in the seismic mass, the seismic mass can be divided into movable mass wings from its geometric center, the mass wings extending between the recesses. The evaluation electrode can have a basic shape matching these mass wings, for example, a crossarm having an arm diameter that expands outward toward the reference electrode frame. The seismic mass can be connected to the substrate via a connection point at its geometric center and a suspension spring extending from that connection point. Using the proposed arrangement, a compact, centered mechanical attachment of the seismic mass and the reference electrode can be achieved, while the seismic mass exhibits high mobility and the arrangement of the anchored attachment points and connection points is protected.

[0028] According to one embodiment, the suspension spring can be designed such that the seismic mass can deflect in deflection directions extending perpendicularly to and parallel to the substrate surface, wherein the microelectromechanical sensor component has at least one lateral sensing element for detecting the deflection of the seismic mass parallel to the substrate surface. The lateral sensing element can be understood as, for example, a capacitively effective sensing structure that, unlike changes in distance between the seismic mass and the evaluation electrode, can detect lateral deflection of the seismic mass from a rest position. The degrees of freedom of the seismic mass can be precisely predetermined by a corresponding configuration of the suspension spring (wherein the suspension spring has a purposefully reduced spring stiffness in a predetermined spatial direction, for example, by a specific spring shape, so that the seismic mass can deflect accordingly along the predetermined spatial direction).

[0029] According to the extended scheme, the seismic mass can deflect in three mutually perpendicular spatial directions, wherein the microelectromechanical sensor component has at least two lateral sensing elements configured to detect the deflection of the seismic mass along two mutually perpendicular spatial directions parallel to the substrate surface. This advantageously expands the application range of the sensor component and increases the functional density on the required chip area in the system-on-chip implementation of the sensor component. Therefore, the microelectromechanical sensor component can be configured to capacitively detect acceleration in all three-dimensional spatial axis directions. Thus, by means of a suitable spring geometry and by adding lateral sensing elements detecting along the x-axis and y-axis, the sensor component can be extended into a triaxial sensor component. This is particularly advantageous because the seismic mass simultaneously mitigates mechanical noise in all three spatial directions. Compared to arranging three uniaxial sensing elements side-by-side on the chip, the same noise performance can therefore be achieved in a significantly smaller area, or significantly better noise performance in the same total area.

[0030] According to one embodiment, at least one lateral sensing element may have an electrode comb structure formed by mass electrode fingers arranged on the seismic mass and counter electrode fingers arranged parallel to the mass electrode fingers on a substrate. In particular, all lateral sensing elements may have this electrode comb structure. Using the electrode comb structure (where the mass electrode fingers and counter electrode fingers are comb-shaped into the spaces between the fingers of the other corresponding electrode fingers), a simple lateral sensing element suitable for accurately detecting lateral deflection motion can be realized.

[0031] The present invention also relates to a microelectromechanical inertial sensor having a microelectromechanical sensor component according to any one of the above features and a signal processing unit for applying and processing signals from the microelectromechanical sensor component. The advantages of the aforementioned compact structure, high offset stability, and improved signal-to-noise ratio can also be achieved using the microelectromechanical inertial sensor. The microelectromechanical inertial sensor can be configured as an accelerometer for detecting translational acceleration, and can additionally be implemented as an angular velocity sensor for detecting rotational acceleration, for example, by combining the aforementioned microelectromechanical sensor component with an angular velocity sensor component. The microelectromechanical inertial sensor can particularly be configured to detect acceleration in a vertical spatial direction by means of the deflection of seismic mass perpendicular to the substrate surface. Due to the high offset stability of the microelectromechanical sensor component, an inertial sensor with high measurement accuracy and high measurement sensitivity can be realized according to the proposed features. The signal processing unit can have an evaluation circuit, which can particularly be configured as an integrated circuit, such as an ASIC (application-specific integrated circuit). The signal processing unit is configured to apply and / or process signals from the microelectromechanical sensor component, and can be used, for example, to receive and evaluate sensor signals from the microelectromechanical sensor component and to perform manipulation tasks.

[0032] Microelectromechanical (MEMS) sensor components can be advantageously integrated with, for example, triaxial angular velocity sensing elements and / or other (especially triaxial) accelerometer sensing elements on a common MEMS chip, in a common housing, or in a common end device. In particular, MEMS sensor components, angular velocity sensing elements, and / or other accelerometer sensing elements can be integrated onto the same chip because, unlike pendulum designs, very small electrode gaps are not required to achieve very low noise values. Therefore, the same electrode gaps as those for angular velocity sensing elements and / or other accelerometer sensing elements can be used in the MEMS sensor component. This simplifies fabrication integration, as achieving different electrode gap sizes would imply significantly higher costs in the fabrication of inertial sensors.

[0033] According to one embodiment, a microelectromechanical inertial sensor can be configured for detecting solid-borne sound, particularly bone-conducted sound, and / or airborne sound. Even very weak sound waves can be reliably detected by the inertial sensor due to its high measurement sensitivity and small installation space requirements. In particular, the microelectromechanical sensor component of the inertial sensor can be configured for detecting bone-conducted sound, wherein a particularly offset-stable and low-noise bone-conducted sound detector can be provided by the configuration of the sensor component having the proposed features and according to an alternative embodiment. Due to its compact form and high measurement sensitivity, the microelectromechanical inertial sensor is advantageously suited for applications near the body, thereby achieving comfortable and reliable bone-conducted sound detection. Such bone-conducted sound detection can, for example, be advantageously used in modern wireless headphones or headsets. For example, the signal from the sensor component detecting bone-conducted sound can be calculated with a simultaneously recorded microphone signal, for example, to achieve active noise cancellation. If the microelectromechanical sensor component is used in combination with other sensor elements, the aforementioned sensor component can be used as a bone-conducted sound sensor, while other sensing elements can be used for motion detection or angular velocity detection, for example, for 3D audio applications.

[0034] The application of the aforementioned microelectromechanical sensor components and / or inertial sensors is particularly advantageous in cases where noise reduction is of exceptionally high priority, especially in z-accelerometers. Microelectromechanical sensor components with the aforementioned characteristics can ensure a very good signal-to-noise ratio, while simultaneously exhibiting favorable offset performance.

[0035] The aforementioned microelectromechanical sensor components and / or the aforementioned microelectromechanical inertial sensors can be used, for example, in the automotive and / or consumer fields, such as in miniaturized wearable devices, such as headphones, earbuds, or true wireless stereo headphones.

[0036] The aforementioned microelectromechanical sensor components and / or the aforementioned microelectromechanical inertial sensors can, for example, be combined with smartphones and tablets, wearable devices, hearing devices, smart glasses, smart contact lenses, augmented reality, virtual reality, drones, games, toys, robots, smart homes, and other applications, particularly in industrial environments, such as: wake-up functionality of selected device modules, device orientation recognition, screen orientation and display orientation, recognition of significant motion, impact and free fall recognition; HMI (Human Machine Interface) functions, such as multi-click recognition, activity, gesture and context recognition, bone conduction sound detection, user recognition, and voice recognition. Recognition, keyword recognition; motion control, gimbal systems, altitude and position stabilization, flight control, image stabilization, indoor and outdoor navigation, floor recognition, location tracking and route recording, PDR (pedestrian dead reckoning), dynamic route planning, boundary and obstacle recognition, indoor SLAM (simultaneous localization and mapping); intrusion detection, real-time motion recognition and tracking, activity tracking, pedometers, calorie counters, sleep monitoring; hearing device wear status detection (in-ear / out-ear detection), head orientation and head movement determination; logistics, parts tracking, energy management and energy-saving measurement, predictive maintenance; sensor data fusion.

[0037] In this context, the invention can also be used in automotive applications, such as: collision detection, for example in airbag systems; Electronic Stability Program (ESP), Vehicle Dynamics Control (VDC); Hill Start Assist, Hill Hold Control (to prevent rolling backward when starting on a slope); Adaptive Suspension Control; Smart Tires, such as Road Condition Monitoring, Road Noise Cancellation; Navigation Applications; Autonomous Driving; Anti-theft Detection, Alarm Functions; Tailgate Tilt Control; Optimization of Engine Control and Combustion Processes in Gasoline or Diesel Engines.

[0038] Due to their basic simple structure, the aforementioned microelectromechanical sensor components and / or the aforementioned microelectromechanical inertial sensors are suitable for manufacture in the mass production process of semiconductor technology.

[0039] In the context of this application, unless explicitly defined otherwise, the word “one” should not be understood as a numeral, but rather as an indefinite article meaning “at least one”. Attached Figure Description

[0040] This invention allows for various implementations, which will be described in more detail below with the aid of embodiments and accompanying drawings. These are illustrated schematically:

[0041] Figure 1 - A schematic diagram of the microelectromechanical sensor component according to the first embodiment in a top view;

[0042] Figure 2a) - A microelectromechanical sensor component according to the first embodiment in its initial state in a side view along section line AB;

[0043] Figure 2 b) - The microelectromechanical sensor component according to the first embodiment under stress in a side view along section line AB;

[0044] Figure 3 -A schematic diagram of the microelectromechanical sensor component according to the first embodiment in its initial state, as shown in the side view along the CD section line;

[0045] Figure 4 – A schematic diagram of the microelectromechanical sensor component according to the second embodiment in a top view;

[0046] Figure 5 – A schematic diagram of the microelectromechanical sensor component according to the third embodiment in a top view;

[0047] Figure 6 - A schematic diagram of the microelectromechanical sensor component according to the fourth embodiment in a top view;

[0048] Figure 7 - A schematic diagram of the microelectromechanical sensor component according to the fifth embodiment in a top view;

[0049] Figure 8 - A schematic diagram of the microelectromechanical sensor component according to the sixth embodiment in a top view;

[0050] Figure 9 - A schematic diagram of the microelectromechanical sensor component according to the seventh embodiment in a top view;

[0051] Figure 10 - Schematic diagram of a microelectromechanical inertial sensor with microelectromechanical sensor components. Detailed Implementation

[0052] Figure 1 , 2 a), 2b), and 3 schematically illustrate the microelectromechanical sensor component 1 in top and side sectional views. According to the illustrated embodiment, the microelectromechanical sensor component 1 is configured as an acceleration sensor component.

[0053] The microelectromechanical sensor component 1 has a substrate 2, such as a silicon wafer, with a substrate surface 2a. Figure 2 a) shows a sensor component 1 in an initial state in which ideally no mechanical stress effect exists on the sensor component 1. Figure 2b) shows the sensor component 1 under stress, where the substrate surface 2a bends due to mechanical stress on the sensor component 1. The related effects on the sensor component 1 will be further explained below.

[0054] The microelectromechanical sensor component 1 has a seismic mass 4 connected to a substrate 2, which is movable relative to the substrate 2 via a suspension spring 3. (The last sentence appears to be incomplete and unrelated to the preceding text. It likely refers to a separate, unrelated sentence.) Figure 2 As seen in a), 2b), and 3, the seismic mass 4 can be deflected in a deflection direction A perpendicular to the substrate surface 2a along the z-axis of the three-dimensional spatial coordinate system. According to Figure 1 In the illustrated embodiment, the seismic mass 4 is connected to the substrate 2 via four mechanical connection points 8, thereby achieving a favorable symmetrical arrangement about the x-axis and y-axis. Suspension springs 3 are connected to the mechanical connection points 8 via first spring ends and to the movable seismic mass 4 via second spring ends. The seismic mass 4 may have perforated openings (not shown in detail) to provide etching channels for manufacturing-related etching processes and / or to purposefully influence the damping characteristics of the microelectromechanical sensor component 1.

[0055] An evaluation electrode 5 is disposed between the substrate 2 and the seismic mass 4. This electrode is used for capacitive detection of the deflection of the seismic mass 4 and provides a useful capacitance signal based on the detected deflection. The evaluation electrode 5 has a regular cross shape 5a and is positioned directly below and centrally below the movable seismic mass 4. The cross arms of the evaluation electrode 5 are spaced apart from the mechanical connection point 8 of the seismic mass 4 and extend to the attachment point 7 of the reference electrode frame 6b, which will be described below.

[0056] Furthermore, the microelectromechanical sensor component 1 has a substantially immovable reference electrode 6. The reference electrode 6 has multiple reference electrode segments 6a, which form a reference electrode frame 6b at least surrounding the seismic mass 4, wherein... Figure 1 The reference electrode frame 6b shown is a continuous reference electrode frame 6b, thereby providing a large electrode area E. R Furthermore, the mechanical stress effect is effective along large electrode paths. Figure 1 As can be seen, the reference electrode segment 6a extends parallel to the lateral outer edge 4a of the seismic mass 4, that is, it surrounds the seismic mass on its lateral side. Figure 1 As shown, the reference electrode 6 is anchored to the substrate 2 via a total of four attachment points 7. Between each attachment point 7, a corresponding reference electrode segment 6a extends cantilevered. The attachment points 7 are respectively arranged on the longitudinal side 6d between the two corner regions 6c of the reference electrode frame 6b. Figure 3 As can be seen from the side cross-sectional view, attachment point 7 is constructed to locally anchor reference electrode 6 onto substrate 2.

[0057] Furthermore, the microelectromechanical sensor component 1 has a reference counter electrode 9 disposed between the substrate 2 and the reference electrode 6, for working together with the reference electrode 6 to provide a capacitance reference signal. Figure 2 As can be seen in a) and 2b), the evaluation electrode 5 and the reference electrode 9 are insulated relative to the substrate 2 by the oxide layer 23. The evaluation electrode 5 and the reference electrode 9 are connected to an electrical conductor rail system (not shown in detail) of the microelectromechanical sensor component 1.

[0058] A reference signal can be provided by a frame-like arrangement of a reference electrode 6 surrounding the seismic mass 4. This reference signal incorporates mechanical stress effects (such as substrate bending), ensuring that the distance change Δd1 between the seismic mass 4 (relative to its rest position) and the evaluation electrode 5 caused by stress effects exists to at least a similar degree between the reference electrode 6 and the reference counter electrode 9. Thus, in differential capacitance evaluation, the offset signal caused by stress can be compensated for or at least reduced, thereby providing a microelectromechanical sensor component 1 with relatively stable offset. Since the seismic mass 4 can be translated and deflected, the microelectromechanical sensor component 1 also exhibits lower mechanical noise than, for example, sensor structures with a pendulum design. Furthermore, the frame-like arrangement of the reference electrode 6 provides a compact microelectromechanical sensor component 1 that is relatively flat compared to sensor structures with a top electrode, enabling differential capacitance evaluation.

[0059] Figure 2 a) and 2b) schematically illustrate the effect of substrate bending due to mechanical stress on the component structure of microelectromechanical sensor component 1. Figure 2 a) It can be seen that, in the initial state without substrate bending, there is a basic distance d1 between the evaluation electrode 5 and the seismic mass 4 in a stationary position, and a basic distance d2 between the reference electrode 9 and the reference electrode 6. Figure 2As seen in b), the mechanical stress S causes the substrate 2 to bend, resulting in a localized distance variation Δd1 between the evaluation electrode 5 and the seismic mass 4 in its stationary position. Since the reference electrode 6 frames around the seismic mass 4, a localized distance variation Δd2 also occurs between the reference electrode 9 and the reference electrode 6 in the region of the reference electrode 6. Therefore, the stress-induced offset of the useful signal of the evaluation electrode 5 and the reference signal of the reference electrode 9 can be advantageously compensated for by the changing reference signal. The reference electrode section 6a can be constructed and arranged such that the average distance variation Δd1 between the evaluation electrode 5 and the seismic mass 4 (relative to the stationary position of the seismic mass 4) caused by the mechanical stress S in the sensor component 1 deviates by a maximum of 25% from the average distance variation Δd2 between the reference electrode 9 and the reference electrode 6. The deviation can be, in particular, a maximum of 15% or a maximum of 5%. Thus, a very good compensation effect for the stress-induced variation of the useful signal can be achieved by means of the corresponding change in the reference signal. The average distance changes Δd1 and Δd2 can be represented here as the sum of the distance changes Δd1 and Δd2 observed along the evaluation electrode 5 and the reference electrode 6, respectively, divided by the number of observed distance changes Δd1 and Δd2.

[0060] like Figure 1 It can be seen that the reference electrode 6 has an effective electrode area E with capacitance. R The electrode area is determined by the single electrode area E of the reference electrode segment 6a. R The sum of components. Furthermore, evaluation electrode 5 has an effective electrode area E for capacitance. A Here, the electrode area E is shown as a continuous line. A Advantageously, the effective electrode area E of the reference electrode 6 is [missing information]. R The effective electrode area E of the capacitance of evaluation electrode 5 can be compared with that of the evaluation electrode 5. A There is a maximum deviation of 10%. The deviation can be as high as 5%. If the electrode area E... A E R If the areas are matched, the useful signal value can correspond to the reference signal value, so that the total signal that directly represents the seismic mass deflection can be obtained in the differential assessment.

[0061] Figure 4A microelectromechanical sensor component 1 according to a second embodiment is shown. In this embodiment, a total of eight attachment points 7 are provided for anchoring a reference electrode 6 to a substrate 2. Two attachment points 7 are provided on each longitudinal side 6d of the seismic mass 4. The two attachment points 7 are arranged closer to the geometric center of the longitudinal side 6d rather than at the corner region 6c, such that the middle reference electrode segment 6a is smaller than the outer reference electrode segment 6a. Thus, when substrate bending occurs, the distance change Δd2 in the corner region 6c of the reference electrode frame 6b can be smaller than in the case of an arrangement with attachment points 7 correspondingly centrally arranged on the longitudinal side 6c, because the distance change Δd2 increases with the increase of the lateral distance to the attachment point 7.

[0062] Figure 5 A microelectromechanical sensor component 1 according to a third embodiment is shown. In this embodiment, a total of four attachment points 7 are provided for anchoring a reference electrode 6 onto a substrate 2, wherein, with Figure 1 Unlike the first embodiment shown, the attachment point 7 is arranged in the corner region 6c of the reference electrode frame 6b. This provides a stable reference electrode frame 6b with good mechanical interaction with the substrate surface 2a.

[0063] Figure 6 A microelectromechanical sensor component 1 according to a fourth embodiment is shown. In this embodiment, a total of two attachment points 7 are provided for anchoring a reference electrode 6 onto a substrate 2. Thus, due to the large electrode area E R A very significant reference signal can be obtained. Furthermore, the evaluation electrode 5 has an extended segment 5b molded onto a regular cross shape 5a. Due to the altered shape of the evaluation electrode 5, the useful signal will change more significantly when the substrate 2 is severely bent at the upper or lower edge of the figure. This can now be better compensated for because the reference electrode 6 also experiences a larger distance change Δd2 when substrate bending occurs. This can be achieved through the freer electrode area E of the reference electrode 6 with two lateral attachment points 7. R To achieve this, the reference electrode 6 with only two attachment points 7 can be advantageously used in a longitudinally elongated sensor component 1, chip, or housing, because stress-induced effects will occur in the x-axis direction that are significantly different from those in the y-axis direction perpendicular to it.

[0064] Figure 7The image shows a microelectromechanical sensor component 1 according to a fifth embodiment. In this embodiment, a reference electrode segment 6a forms a segmented, discontinuous reference electrode frame 6b, which has a corresponding discontinuity 10 on each longitudinal side 6d between the corner regions 6c of the reference electrode frame 6b. Through the discontinuities 10, for example, a conductor rail can be directed to the evaluation electrode 5 without parasitic capacitance. Furthermore, the angled reference electrode frame portions allow for reliable consideration of multidimensional mechanical stress effects. It is also conceivable, in principle (although not shown in detail), that the discontinuous reference electrode frame 6b has at least one discontinuity 10 in the corner regions of the reference electrode frame 6b.

[0065] Figure 8 The image shows a microelectromechanical sensor component 1 according to a sixth embodiment. In this embodiment, the seismic mass 4 has a plurality of recesses 4b (four in total according to the illustrated embodiment), wherein an attachment point 7 of a reference electrode 6 is arranged in each recess 4b of the seismic mass 4. The attachment point 7 is moved to the inner region of the seismic mass 4 via a connecting arm 7b extending from the reference electrode frame 6b toward the geometric center of the seismic mass 4. The seismic mass 4 is divided into movable mass wings by the recesses 4b, which extend between the recesses 4b. The evaluation electrode 5 has a matching basic shape in that the cross arm has an arm diameter that expands outward toward the reference electrode frame 6b. The seismic mass 4 is connected to the substrate 2 by a single mechanical connection point 8 arranged at the geometric center of the seismic mass 4 and a suspension spring 3 extending from this connection point. Using the sensor component 1 according to the sixth embodiment, a compact, centrally located mechanical connection between the seismic mass 4 and the reference electrode 6 can be achieved.

[0066] Figure 9 A microelectromechanical sensor component 1 according to a seventh embodiment is shown. In this embodiment, the suspension spring 3 is designed such that the seismic mass 4 can deflect in a deflection direction A extending perpendicularly to and parallel to the substrate surface 2a. Furthermore, according to the illustrated embodiment, the microelectromechanical sensor component 1 has four lateral sensing elements 11 for detecting the deflection of the seismic mass 4 parallel to the substrate surface 2a. Overall, according to... Figure 9 In the embodiment shown, the seismic mass 4 can deflect in three mutually perpendicular spatial directions x, y, and z, and the lateral sensing element 11 is configured to detect the deflection of the seismic mass 4 along two mutually perpendicular spatial directions x and y parallel to the substrate surface 2a. Thus, the microelectromechanical sensor component 1 is implemented as a triaxial accelerometer element. Here, the seismic mass 4 can simultaneously reduce mechanical noise in all three spatial directions x, y, and z. Figure 9As schematically shown, the lateral sensing element 11 has an electrode comb structure, which is formed by mass electrode fingers 11b arranged on the seismic mass 4 and counter electrode fingers 11c arranged parallel to the mass electrode fingers 11b on the substrate 2, thereby enabling accurate detection of lateral deflection motion in a simple manner.

[0067] Figure 10 A schematic diagram of a microelectromechanical inertial sensor 20 with a microelectromechanical sensor component 1 is shown. This microelectromechanical sensor component is connected via a signal connection 22 to a signal processing unit 21, for example, implemented as an ASIC, for applying and processing signals from the microelectromechanical sensor component 1. The microelectromechanical sensor component 1 can be constructed, for example, according to one of the embodiments described above. The microelectromechanical inertial sensor 20 can be constructed, for example, as an accelerometer for detecting translational acceleration. The microelectromechanical inertial sensor 20 can be constructed for detecting solid-borne sound and / or airborne sound, particularly for detecting bone conduction sound. Using the microelectromechanical inertial sensor 20, due to the implemented microelectromechanical sensor component 1 according to the aforementioned characteristics, an inertial sensor 20 with high offset stability and a good signal-to-noise ratio is obtained. Due to its compact structure and high sensitivity, reliable and comfortable sound detection can be achieved, for example, in wireless headphones or headsets, using the microelectromechanical inertial sensor 20.

Claims

1. A microelectromechanical sensor component (1), comprising: - A substrate (2) having a substrate surface (2a); - A seismic mass (4) connected to the substrate (2) and movable relative to the substrate (2) via a suspension spring (3), wherein, The seismic mass (4) can be deflected in a deflection direction (A) that extends perpendicular to the substrate surface (2a); and - An evaluation electrode (5) is arranged between the substrate (2) and the seismic mass (4) for capacitive detection of the deflection of the seismic mass (4) and providing a useful capacitive signal; The microelectromechanical sensor component (1) further comprises: - A reference electrode (6) with multiple reference electrode segments (6a), the reference electrode segments forming at least segmented reference electrode frames (6b) surrounding the seismic mass (4), wherein the reference electrode (6) is anchored to the substrate (2) by at least two attachment points (7), and the corresponding reference electrode segment (6a) extends cantilevered between the two attachment points (7); and - A reference electrode (9) disposed between the substrate (2) and the reference electrode (6) is used to work together with the reference electrode (6) to provide a capacitance reference signal.

2. The microelectromechanical sensor component (1) according to claim 1, wherein, The reference electrode section (6a) is constructed and arranged in the microelectromechanical sensor component (1) such that the average distance change (Δd1) between the evaluation electrode (5) and the seismic mass (4) relative to the static position of the seismic mass (4) caused by the mechanical stress (S) in the sensor component (1) deviates by a maximum of 25% from the average distance change (Δd2) between the reference electrode (9) and the reference electrode (6).

3. The microelectromechanical sensor component (1) according to claim 1 or 2, wherein, The reference electrode segment (6a) extends parallel to the outer edge (4a) of the seismic mass (4).

4. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, The effective electrode area (E) of the reference electrode (6) R The effective electrode area (E) of the capacitance of the evaluation electrode (5) A There is a maximum deviation of 10%.

5. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, The reference electrode segment (6a) forms a continuous reference electrode frame (6b).

6. The microelectromechanical sensor component (1) according to any one of claims 1 to 4, wherein, The reference electrode segment (6a) forms a segmented, discontinuous reference electrode frame (6b).

7. The microelectromechanical sensor component (1) according to claim 6, wherein, The discontinuous reference electrode frame (6b) has at least one discontinuity (10) on the longitudinal side (6d) between the two corner regions (6c) of the reference electrode frame (6b).

8. The microelectromechanical sensor component (1) according to claim 6 or 7, wherein, The discontinuous reference electrode frame (6b) has at least one discontinuity (10) in the corner region (6c) of the reference electrode frame (6b).

9. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, The reference electrode (6) has at least four attachment points (7).

10. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, The reference electrode (6) has up to eight attachment points (7).

11. The microelectromechanical sensor component (1) according to any one of claims 1 to 8, wherein, The reference electrode (6) has at most two attachment points (7).

12. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, At least one attachment point (7) is arranged in the corner region (6c) of the reference electrode frame (6b).

13. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, At least one attachment point (7) is arranged on the longitudinal side (6d) between the two corner regions (6c) of the reference electrode frame (6b).

14. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, The evaluation electrode (5) has a regular cross shape (5a).

15. The microelectromechanical sensor component (1) according to claim 14, wherein, The evaluation electrode (5) has an extended section (5b) molded onto the regular cross shape (5a).

16. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, The seismic mass (4) has at least two recesses (4b), wherein at least one attachment point (7) of the reference electrode (6) is arranged in the corresponding recess (4b) of the seismic mass (4).

17. The microelectromechanical sensor component (1) according to any one of the preceding claims, wherein, The suspension spring (3) is designed such that the seismic mass (4) can deflect in a deflection direction (A) that extends perpendicularly to and parallel to the substrate surface (2a), wherein the microelectromechanical sensor component (1) has at least one lateral sensing element (11) for detecting the deflection of the seismic mass (4) parallel to the substrate surface (2a).

18. The microelectromechanical sensor component (1) according to claim 17, wherein, The seismic mass (4) can deflect in three mutually perpendicular spatial directions (x, y, z), wherein the microelectromechanical sensor component (1) has at least two lateral sensing elements (11) configured to detect the deflection of the seismic mass (4) along two mutually perpendicular spatial directions parallel to the substrate surface (2a) (x, y).

19. The microelectromechanical sensor component (1) according to claim 17 or 18, wherein, At least one lateral sensing element (11) has an electrode comb structure (11a) formed by mass electrode fingers (11b) arranged on the seismic mass (4) and counter electrode fingers (11c) arranged parallel to the mass electrode fingers (11b) on the substrate (2).

20. A microelectromechanical inertial sensor (20) having a microelectromechanical sensor component (1) according to any one of the preceding claims and a signal processing unit (21) for applying and processing signals of the microelectromechanical sensor component (1).

21. The microelectromechanical inertial sensor (20) according to claim 20, wherein, The microelectromechanical inertial sensor (20) is configured to detect solid-borne sound, especially bone conduction sound and / or airborne sound.

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