Transformer and manufacturing method thereof

Abstract

The invention provides a transformer and a manufacturing method thereof. The transformer includes a bottom structure, a top structure, and an intermediate structure. The bottom structure includes a bottom wiring layer embedded in a bottom insulating layer. The top structure is disposed on the bottom structure, wherein the top structure includes a top wiring layer embedded in a top insulating layer. The middle structure is arranged between the bottom structure and the top structure. The intermediate structure comprises an insulating layer, a plurality of annular metal layers and a plurality of conductive columns. The plurality of annular metal layers are stacked on each other in the insulating layer in the first direction. The plurality of conductive columns are arranged in the insulating layer and are arranged on the inner side and the outer side of the plurality of stacked annular metal layers, wherein the insulating layer electrically isolates the plurality of conductive columns from the annular metal layers. The top circuit layer and the bottom circuit layer are electrically connected through a plurality of conductive columns of the middle structure.

Description

Technical Field

[0001] This application relates to an electronic component and a method for manufacturing the same, and more particularly to a transformer and a method for manufacturing the same. Background Technology

[0002] Generally, a transformer consists of an iron core and two sets of independent coils. The iron core is, for example, made of multiple stacked toroidal iron sheets. The two sets of coils are formed by enameled wire wrapped around opposite sides of the iron core, serving as the primary and secondary sides respectively. Based on the principle of electromagnetic induction, they achieve voltage conversion under the influence of alternating current. However, traditional transformers are large and heavy, making miniaturization difficult and limiting their applications. Summary of the Invention

[0003] The technical problem to be solved by this application is to provide a transformer and a method for manufacturing the same, which has a reduced size and is easy to manufacture.

[0004] According to an embodiment of this application, a method for manufacturing a transformer includes the following steps: Forming a plurality of intermediate layers, each of the plurality of intermediate layers including an insulating layer, an annular metal layer, and a plurality of vertical connectors. The annular metal layer is embedded within the insulating layer. The plurality of vertical connectors are disposed in the insulating layer and along the inner and outer sides of the annular metal layer, wherein the insulating layer electrically isolates the plurality of vertical connectors from the annular metal layer. Forming a top structure, wherein the top structure includes a top wiring layer embedded in a top insulating layer. Forming a bottom structure, wherein the bottom structure includes a bottom wiring layer embedded in a bottom insulating layer. Sequentially stacking the bottom structure, the plurality of intermediate layers, and the top structure in a first direction, such that the plurality of intermediate layers are located between the bottom structure and the top structure, wherein the annular metal layers of the plurality of intermediate layers overlap each other, and the plurality of vertical connectors of the plurality of intermediate layers overlap each other. Joining the bottom structure, the plurality of intermediate layers, and the top structure, wherein the top wiring layer and the bottom wiring layer are electrically connected to each other through the plurality of vertical connectors of the plurality of intermediate layers.

[0005] In one embodiment of this application, each of the plurality of intermediate layers comprises a plurality of first vertical connectors and a plurality of second vertical connectors. The plurality of first vertical connectors are located in an insulating layer and are arranged in pairs on both sides of a first side of the annular metal layer. The plurality of second vertical connectors are located in an insulating layer and are arranged in pairs on both sides of a second side of the annular metal layer, wherein the second side is opposite to the first side.

[0006] In one embodiment of this application, the top wiring layer of the top structure includes a plurality of first top wiring patterns and a plurality of second top wiring patterns, and the bottom wiring layer of the bottom structure includes a plurality of first bottom wiring patterns and a plurality of second bottom wiring patterns. When the bottom structure, the plurality of intermediate layers and the top structure are stacked sequentially, the plurality of first top wiring patterns and the plurality of first bottom wiring patterns correspond to the first side of the annular metal layer, and the plurality of second top wiring patterns and the plurality of second bottom wiring patterns correspond to the second side of the annular metal layer.

[0007] In one embodiment of this application, each of the plurality of intermediate layers has a plurality of first vertical connectors corresponding to both ends of each of the plurality of first bottom circuit patterns, and each of the plurality of intermediate layers has a plurality of second vertical connectors corresponding to both ends of each of the plurality of second bottom circuit patterns.

[0008] In one embodiment of this application, the plurality of first top circuit patterns and the plurality of first bottom circuit patterns are electrically connected to each other through a plurality of first vertical connectors in a plurality of intermediate layers to form a first conductive path that surrounds the first side of the annular metal layer. The plurality of second top circuit patterns and the plurality of second bottom circuit patterns are electrically connected to each other through a plurality of second vertical connectors in a plurality of intermediate layers to form a second conductive path that surrounds the second side of the annular metal layer.

[0009] In one embodiment of this application, when the bottom structure, multiple intermediate layers and the top structure are stacked sequentially, the first end of the Nth first top circuit pattern arranged in the second direction corresponds to the first end of the (N+1)th first bottom circuit pattern arranged in the second direction, and the second end of the Nth first top circuit pattern arranged in the second direction corresponds to the second end of the Nth first bottom circuit pattern arranged in the second direction. The first end refers to the end near the outer side of the annular metal layer, and the second end refers to the end near the inner side of the annular metal layer. N is a positive integer.

[0010] In one embodiment of this application, the step of forming each of the plurality of intermediate layers includes the following steps: forming a first insulating layer, wherein the first insulating layer has a plurality of first openings; forming an annular metal layer on the first insulating layer; forming a plurality of vertical connectors on the first insulating layer and in the plurality of first openings; forming a second insulating layer on the annular metal layer and the plurality of vertical connectors to cover the top surfaces of the annular metal layer and the plurality of vertical connectors, wherein the first insulating layer and the second insulating layer constitute the insulating layer; forming a plurality of second openings in the second insulating layer to expose the plurality of vertical connectors.

[0011] In one embodiment of this application, the step of forming the top structure includes the following steps: forming a first top insulating layer, wherein the first top insulating layer has a plurality of top openings; forming a conductive material layer on the first top insulating layer; patterning the conductive material layer to form a top wiring layer on the first top insulating layer and in the plurality of top openings, wherein the top wiring layer includes a top wiring pattern located on the first top insulating layer and a plurality of top contacts located in the plurality of top openings, the plurality of top contacts corresponding to the two ends of the top wiring pattern; and forming a second top insulating layer on the top wiring layer.

[0012] In one embodiment of this application, the step of forming the bottom structure includes the following steps: forming a first bottom insulating layer; forming a conductive material layer on the first bottom insulating layer; patterning the conductive material layer to form a bottom wiring layer on the first bottom insulating layer, wherein the bottom wiring layer includes a plurality of bottom wiring patterns; forming a second bottom insulating layer on the bottom wiring layer; and forming a plurality of bottom openings in the second bottom insulating layer to expose both ends of each of the plurality of bottom wiring patterns.

[0013] In one embodiment of this application, the method for joining the bottom structure, multiple intermediate layers, and the top structure includes the following steps: Vertical connectors corresponding to adjacent intermediate layers are joined and electrically connected to each other using a first conductive connector. The bottom wiring layer of the bottom structure is joined and electrically connected to the multiple vertical connectors corresponding to the bottommost layer of the multiple intermediate layers using a second conductive connector. The top wiring layer of the top structure is joined and electrically connected to the multiple vertical connectors corresponding to the topmost layer of the multiple intermediate layers using a third conductive connector.

[0014] In one embodiment of this application, the first conductive connector, the second conductive connector, and the third conductive connector include solder balls or microbumps.

[0015] In one embodiment of this application, after the bottom structure, multiple intermediate layers and the top structure are joined, the multiple vertical connectors of the bottommost layer of the multiple intermediate layers extend through a portion of the bottom insulation layer of the bottom structure to be physically and electrically connected to the bottom wiring layer of the bottom structure.

[0016] In one embodiment of this application, after the bottom structure, multiple intermediate layers and top structure are joined, a portion of the top wiring layer of the top structure extends through the top insulating layer of the multiple intermediate layers to be physically and electrically connected to multiple vertical connectors on the top layer of the multiple intermediate layers.

[0017] The transformer of this application includes a bottom structure, a top structure, and an intermediate structure. The bottom structure includes a bottom wiring layer embedded in a bottom insulating layer. The top structure is disposed on top of the bottom structure, and includes a top wiring layer embedded in a top insulating layer. The intermediate structure is disposed between the bottom structure and the top structure. The intermediate structure includes an insulating layer, multiple annular metal layers, and multiple conductive posts. The multiple annular metal layers are stacked on top of each other in a first direction within the insulating layer. The multiple conductive posts are disposed within the insulating layer and are located inside and outside the stacked multiple annular metal layers, wherein the insulating layer electrically isolates the multiple conductive posts from the multiple annular metal layers. The top wiring layer and the bottom wiring layer are electrically connected through the multiple conductive posts of the intermediate structure.

[0018] In one embodiment of this application, the plurality of conductive pillars includes a plurality of first conductive pillars and a plurality of second conductive pillars. The plurality of first conductive pillars are located in an insulating layer and are arranged in pairs on both sides of a first side of the stacked plurality of annular metal layers. The plurality of second conductive pillars are located in an insulating layer and are arranged in pairs on both sides of a second side of the stacked plurality of annular metal layers, wherein the second side is opposite to the first side.

[0019] In one embodiment of this application, the top wiring layer of the top structure includes a plurality of first top wiring patterns and a plurality of second top wiring patterns, and the bottom wiring layer of the bottom structure includes a plurality of first bottom wiring patterns and a plurality of second bottom wiring patterns. The plurality of first top wiring patterns and the plurality of first bottom wiring patterns correspond to the first side of the stacked plurality of annular metal layers, and the plurality of second top wiring patterns and the plurality of second bottom wiring patterns correspond to the second side of the stacked plurality of annular metal layers.

[0020] In one embodiment of this application, the orthographic projections of the plurality of first top circuit patterns in the first direction and the orthographic projections of the plurality of first bottom circuit patterns in the first direction are arranged alternately along the second direction.

[0021] In one embodiment of this application, the plurality of first top circuit patterns and the plurality of first bottom circuit patterns are electrically connected to each other through the plurality of first conductive pillars of the intermediate structure to form a first conductive path surrounding the first side of the plurality of stacked annular metal layers. The plurality of second top circuit patterns and the plurality of second bottom circuit patterns are electrically connected to each other through the plurality of second conductive pillars of the intermediate structure to form a second conductive path surrounding the second side of the plurality of stacked annular metal layers.

[0022] In one embodiment of this application, each of the plurality of conductive pillars includes vertical connectors and conductive connectors that are staggered in a first direction, wherein the materials of the vertical connectors and the conductive connectors are different.

[0023] In one embodiment of this application, the material of the vertical connector is the same as the material of the plurality of annular metal layers.

[0024] Based on the above, the transformer of this application is manufactured using semiconductor processes, which effectively reduces its size to form an ultra-thin transformer, thus facilitating its application in small-volume products. Furthermore, the transformer of this application can be easily integrated with semiconductor devices, achieving efficient application in terms of both process flow and space.

[0025] The other effects and embodiments of this application are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1A This is a perspective view of a transformer according to an embodiment of this application.

[0028] Figure 1B This is a cross-sectional schematic diagram of a transformer according to an embodiment of this application.

[0029] Figure 1C This is a top view schematic diagram of the intermediate structure of a transformer according to an embodiment of this application.

[0030] Figure 1D This is a top view schematic diagram of the bottom structure of a transformer according to an embodiment of this application.

[0031] Figure 1E This is a schematic diagram of the first conductor structure and the second conductor structure of a transformer according to an embodiment of this application, in a first direction.

[0032] Figures 2A to 2E This is a cross-sectional schematic diagram of the manufacturing process of an intermediate structure according to an embodiment of this application.

[0033] Figures 3A to 3C This is a cross-sectional schematic diagram of the manufacturing process of a top structure according to an embodiment of this application.

[0034] Figures 4A to 4B This is a cross-sectional schematic diagram of the manufacturing process of a bottom structure according to an embodiment of this application.

[0035] Figures 5A to 5BThis is a cross-sectional schematic diagram of the manufacturing process of a transformer according to an embodiment of this application.

[0036] Figures 6A to 6F This is a cross-sectional schematic diagram of the manufacturing process of a transformer according to an embodiment of this application. Detailed Implementation

[0037] In the accompanying drawings, the thicknesses of layers, films, panels, regions, etc., are enlarged for clarity. Throughout the specification, the same reference numerals denote the same components. It should be understood that when a component such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another component, it may be directly on or connected to the other component, or an intermediate component may also be present. Conversely, when a component is referred to as being "directly on" or "directly connected" to another component, no intermediate component is present. As used herein, "connection" can refer to a physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may refer to the presence of other components between the two components.

[0038] It should be understood that although the terms “first,” “second,” etc., may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, and / or portions should not be limited by these terms. These terms are used only to distinguish one component, part, region, layer, or portion from another. Therefore, the “first component,” “part,” “region,” “layer,” or “part” discussed below may be referred to as a second component, part, region, layer, or portion without departing from the teachings of this document.

[0039] Figure 1A This is a perspective view of a transformer 10 according to an embodiment of this application. Figure 1B This is a cross-sectional schematic diagram of a transformer 10 according to an embodiment of this application. Figure 1C This is a top view schematic diagram of the intermediate structure 104 of a transformer 10 according to an embodiment of this application. Figure 1D This is a top view schematic diagram of the bottom structure 102 of a transformer 10 according to an embodiment of this application. Figure 1E This is a schematic diagram of the first conductor structure 130a and the second conductor structure 130b of a transformer 10 according to an embodiment of this application, projected onto a first direction D1. Figure 1B It can be along Figure 1A A sectional view along section line A-A'. For clarity, Figure 1A , Figure 1C and Figure 1D It is drawn in perspective. Figure 1A Only two annular metal layers 120, represented by dashed lines, are shown in the diagram for illustrative purposes, while other annular metal layers are omitted.

[0040] Please refer to Figures 1A to 1D The transformer 10 includes a bottom structure 102, an intermediate structure 104, and a top structure 106. The bottom structure 102 includes a bottom wiring layer 132 embedded in a bottom insulating layer 110b. The top structure 106 is disposed above the bottom structure 102 and includes a top wiring layer 136 embedded in a top insulating layer 110b. The intermediate structure 104 is disposed between the bottom structure 102 and the top structure 106. The intermediate structure 104 may include multiple intermediate layers (e.g., intermediate layers 104a to 104h) sequentially stacked on the bottom structure 102 in a first direction D1. Figure 1B The diagram schematically illustrates eight intermediate layers, but this is not intended to limit the scope of this application. The number of intermediate layers can be one or more, and can be adjusted according to actual needs.

[0041] Intermediate layers 104a to 104h have essentially the same structure and configuration. For example, each of intermediate layers 104a to 104h includes an insulating layer 110, an annular metal layer 120, and a plurality of vertical connectors 134. The annular metal layer 120 is embedded in the insulating layer 110, and the plurality of vertical connectors 134 are disposed in the insulating layer 110 and along the inner side 120a and outer side 120b of the annular metal layer 120. The insulating layer 110 electrically isolates the plurality of vertical connectors 134 from the annular metal layer 120. In some embodiments, the annular metal layer 120 may be a closed ring. The closed ring may include, for example, a rectangular ring, a circular ring, an elliptical ring, or other suitable shapes, and this application is not limited thereto. In embodiments where the annular metal layer 120 is a rectangular ring, such as Figure 1A As shown, the annular metal layer 120 is composed of four sides S1, S2, S3, and S4. Sides S1, S2, S3, and S4 are sequentially connected to form a rectangle. Sides S1 and S3 extend in the second direction D2 and are opposite to each other, for example, while sides S2 and S4 extend in the third direction D3 and are opposite to each other. The first direction D1, the second direction D2, and the third direction D3 are perpendicular to each other. In some embodiments, the plurality of vertical connectors 134 may include a plurality of first vertical connectors 134a and a plurality of second vertical connectors 134b. The plurality of first vertical connectors 134a are arranged in pairs on both sides of side S1 of the annular metal layer 120 in the second direction D2; the plurality of second vertical connectors 134b are arranged in pairs on both sides of side S3 of the annular metal layer 120 in the second direction D2. Specifically, in Figure 1CThe diagram shows 12 pairs of first vertical connectors 134a arranged sequentially along the second direction D2 and 9 pairs of second vertical connectors 134b arranged sequentially along the second direction D2. The symbol for each vertical connector is followed by (n) to indicate the order of the pair along the arrangement direction (e.g., the second direction D2), where n is a positive integer. For example, 134a(1) represents the first pair of first vertical connectors, 134a(2) represents the second pair of first vertical connectors, and so on. One of each pair of first vertical connectors 134a is arranged inside the side S1 of the annular metal layer 120 (also called the inner vertical connector), and the other of each pair of first vertical connectors 134a is arranged outside the side S1 of the annular metal layer 120 (also called the outer vertical connector). Similarly, one of each pair of second vertical connectors 134b is arranged inside the side S3 of the annular metal layer 120 (also referred to as the inner vertical connector), and the other of each pair of second vertical connectors 134b is arranged outside the side S3 of the annular metal layer 120 (also referred to as the outer vertical connector). It should be understood that... Figure 1C The illustrations of multiple first vertical connectors 134a and multiple second vertical connectors 134b are merely schematic and are not intended to limit this application. The number of first vertical connectors 134a and the number of second vertical connectors 134b may be adjusted according to actual needs.

[0042] In some embodiments, the number of first vertical connector pairs differs from the number of second vertical connector pairs. In this embodiment, the number of first vertical connector pairs is greater than the number of second vertical connector pairs, but this application is not limited thereto. In other embodiments, the number of first vertical connector pairs may be less than the number of second vertical connector pairs.

[0043] In some embodiments, the annular metal layer 120 of each of the intermediate layers 104a to 104h (e.g., intermediate layer 104a) is arranged and overlaps with the annular metal layer 120 of the adjacent intermediate layer (e.g., intermediate layer 104b) in the first direction D1, and a plurality of vertical connectors 134 of each of the intermediate layers 104a to 104h (e.g., intermediate layer 104a) are arranged and overlaps with a plurality of vertical connectors 134 of the adjacent intermediate layer (e.g., intermediate layer 104b) in the first direction D1. In some embodiments, the plurality of vertical connectors 134 from different intermediate layers arranged and overlapping in the first direction D1 are electrically connected to each other, thereby forming a plurality of conductive pillars 134', such as... Figure 1BAs shown. That is, each conductive post 134' may include one of the vertical connectors 134 of each intermediate layer 104a to 104h. The conductive post 134' may be divided into a first conductive post 134a' and a second conductive post 134b'. The first conductive post 134a' may correspond, for example, to a plurality of first vertical connectors 134a arranged in the first direction D1 and electrically connected to each other. The second conductive post 134b' may correspond, for example, to a plurality of second vertical connectors 134b arranged in the first direction D1 and electrically connected to each other. That is, the first conductive posts 134a' may be arranged in pairs along the second direction D2 on both sides of the side S1 of the stacked plurality of annular metal layers 120, and the second conductive posts 134b' may be arranged in pairs along the second direction D2 on both sides of the side S3 of the stacked plurality of annular metal layers 120. In other words, the intermediate structure 104 may include a plurality of annular metal layers 120 and a plurality of conductive pillars 134' located in the insulating layer 110. The plurality of conductive pillars 134' are disposed on the inner and outer sides of the stacked plurality of annular metal layers 120 and are electrically isolated from the stacked plurality of annular metal layers 120.

[0044] In some embodiments, the number of first conductive posts 134a' differs from the number of second conductive posts 134b'. Figure 1A The diagram schematically illustrates 12 pairs of first conductive posts 134a' and 9 pairs of second conductive posts 134b', but is not intended to limit this application. The number of first conductive posts 134a' and second conductive posts 134b' can be adjusted according to actual needs, and the number of first conductive posts 134a' can be greater than or less than the number of second conductive posts 134b'. Figures 1A to 1E In the symbol of the conductive pillar, (n) is added after the symbol to indicate the order of the pair of conductive pillars along the arrangement direction (e.g., the second direction D2, etc.) (where n is a positive integer). For example, 134a'(1) represents the first pair of first conductive pillars, 134b'(1) represents the first pair of second conductive pillars, and so on.

[0045] The top wiring layer 136 of the top structure 106 and the bottom wiring layer 132 of the bottom structure 102 are electrically connected through multiple conductive pillars 134' (or multiple vertical connectors 134) of the intermediate structure 104.

[0046] In some embodiments, the top wiring layer 136 includes a plurality of first top wiring patterns 136a and a plurality of second top wiring patterns 136b. The plurality of first top wiring patterns 136a are, for example, a plurality of line segments arranged in a second direction D2 and extending in a third direction D3. Each of the plurality of first top wiring patterns 136a crosses the side S1 of the stacked plurality of annular metal layers 120 in the third direction D3; that is, the width w2 of the first top wiring pattern 136a in the third direction D3 is greater than the width w1 of the side S1 of the annular metal layer 120 in the third direction D3. Similarly, the plurality of second top wiring patterns 136b are, for example, a plurality of line segments arranged in the second direction D2 and extending in the third direction D3. Each of the plurality of second top wiring patterns 136b crosses the side S3 of the stacked plurality of annular metal layers 120 in the third direction D3; that is, the width w4 of the second top wiring pattern 136b in the third direction D3 is greater than the width w3 of the side S3 of the annular metal layer 120 in the third direction D3. The first top line pattern 136a and the second top line pattern 136b can be collectively referred to as top line patterns.

[0047] In some embodiments, the number of first top line patterns 136a is different from the number of second top line patterns 136b. Figure 1A The diagram schematically illustrates 12 first top line patterns 136a and 9 second top line patterns 136b, but is not intended to limit this application. The number of first top line patterns 136a and second top line patterns 136b can be adjusted according to actual needs. Figures 1A to 1E In the diagram, (n) is added after the symbol of the top line pattern to indicate the order of the top line pattern along the arrangement direction (e.g., the second direction D2, etc.) (where n is a positive integer). For example, 136a(1) represents the first first top line pattern, 136b(1) represents the first second top line pattern, and so on.

[0048] In some embodiments, the bottom wiring layer 132 includes a plurality of first bottom wiring patterns 132a and a plurality of second bottom wiring patterns 132b. The plurality of first bottom wiring patterns 132a are, for example, a plurality of line segments arranged in a second direction D2 and extending in a fourth direction D4. Each of the plurality of first bottom wiring patterns 132a crosses the side edge S1 of the stacked plurality of annular metal layers 120 in the fourth direction D4; that is, the width w5 of the first bottom wiring pattern 132a in the fourth direction D4 is greater than the width w1 of the side edge S1 of the annular metal layer 120 in the third direction D3. The fourth direction D4 intersects but is not perpendicular to the third direction D3 and the second direction D2, and the fourth direction D4 is perpendicular to the first direction D1. Multiple second bottom circuit patterns 132b are, for example, multiple line segments arranged in the second direction D2 and extending in the fifth direction D5. Each of the multiple second bottom circuit patterns 132b crosses the side S3 of the stacked multiple annular metal layers 120 in the fifth direction D5. That is, the width w6 of the second bottom circuit pattern 132b in the fifth direction D5 is greater than the width w3 of the side S3 of the annular metal layer 120 in the third direction D3. The fifth direction D5 intersects but is not perpendicular to the third direction D3 and the second direction D2, and the fifth direction D5 is perpendicular to the first direction D1. The fourth direction D4 may be the same as or different from the fifth direction D5.

[0049] In some embodiments, the number of first bottom line patterns 132a is different from the number of second bottom line patterns 132b. Figure 1A The diagram schematically illustrates 12 first bottom line patterns 132a and 9 second bottom line patterns 132b, but is not intended to limit this application. The number of first bottom line patterns 132a and second bottom line patterns 132b can be adjusted according to actual needs. Figures 1A to 1E In the diagram, (n) is added after the symbol of the bottom line pattern to indicate the order of the bottom line pattern along the arrangement direction (e.g., the second direction D2, etc.) (where n is a positive integer). For example, 132a(1) represents the first bottom line pattern, 132a(2) represents the second bottom line pattern, and so on.

[0050] In some embodiments, the number of first bottom circuit patterns 132a is the same as the number of first top circuit patterns 136a, and the number of second bottom circuit patterns 132b is the same as the number of second top circuit patterns 136b. The number of first conductive pillars 134a' is substantially twice the number of first bottom circuit patterns 132a, and the number of second conductive pillars 134b' is substantially twice the number of second bottom circuit patterns 132b.

[0051] In some embodiments, the two ends of the first bottom circuit pattern 132a may correspond to a pair of first conductive posts 134a' (or a pair of first vertical connectors 134a of intermediate layers 104a to 104h) and be electrically connected to the first conductive posts 134a' (or the pair of first vertical connectors 134a of intermediate layers 104a to 104h), and the two ends of the second bottom circuit pattern 132b may correspond to a pair of second conductive posts 134b' (or a pair of second vertical connectors 134b of intermediate layers 104a to 104h) and be electrically connected to the second conductive posts 134b' (or the pair of second vertical connectors 134b of intermediate layers 104a to 104h). For example, the first pair of first conductive posts 134a' (1) corresponds to the two ends of the first first bottom circuit pattern 132a (1), the second pair of first conductive posts 134a' (2) corresponds to the two ends of the second first bottom circuit pattern 132a (2), and so on. Specifically, all first bottom circuit patterns 132a and second bottom circuit patterns 132b have a first end E1 and a second end E2. The first end E1 is, for example, on the outer side near the annular metal layer 120, and the second end E2 is, for example, on the inner side near the annular metal layer 120. The first end E1 of the first bottom circuit pattern 132a(1) can correspond to the outer conductive post of the first pair of first conductive posts 134a'(1) (referring to the conductive post of the first pair of first conductive posts 134a'(1) that is close to the outer side of the annular metal layer 120), and the second end E2 of the first bottom circuit pattern 132a(1) can correspond to the inner conductive post of the first pair of first conductive posts 134a'(1) (referring to the conductive post of the first pair of first conductive posts 134a'(1) that is close to the inner side of the annular metal layer 120), and so on, which will not be elaborated here.

[0052] In some embodiments, such as Figure 1EAs shown, the orthographic projections of multiple first bottom circuit patterns 132a in the first direction D1 and multiple first top circuit patterns 136a in the first direction D1 are staggered along the second direction D2, forming a Z-shaped orthographic projection shape. Specifically, all first bottom circuit patterns 132a and first top circuit patterns 136a have a first end E1 and a second end E2. The first end E1 is, for example, on the outer side near the annular metal layer 120, and the second end E2 is, for example, on the inner side near the annular metal layer 120. The first end E1 of the Nth first top circuit pattern 136a arranged in the second direction D2 corresponds to the first end E1 of the (N+1)th first bottom circuit pattern 132a arranged in the second direction D2, and the second end E2 of the Nth first top circuit pattern 136a arranged in the second direction D2 corresponds to the second end E2 of the Nth first bottom circuit pattern 132a arranged in the second direction D2. For example, the second end E2 of the first bottom circuit pattern 132a(1) can correspond to the second end E2 of the first top circuit pattern 136a(1), so the inner conductive post of the first pair of first conductive posts 134a'(1) can be connected between the second end E2 of the first bottom circuit pattern 132a(1) and the second end E2 of the first top circuit pattern 136a(1). In addition, the first end E1 of the first top circuit pattern 136a(1) corresponds to the first end E1 of the second bottom circuit pattern 132a(2), so the outer conductive post of the second pair of first conductive posts 134a'(2) can be connected between the first end E1 of the first top circuit pattern 136a(1) and the first end E1 of the second bottom circuit pattern 132a(2). In this way, the outer conductive post of the first pair of first conductive posts 134a'(1), the first first bottom circuit pattern 132a(1), the inner conductive post of the first pair of first conductive posts 134a'(1), and the first first top circuit pattern 136a(1) are connected in sequence to form a first coil structure surrounding the side S1 of the stacked multiple annular metal layers 120. Similarly, the second end E2 of the second first bottom circuit pattern 132a(2) can correspond to the second end E2 of the second first top circuit pattern 136a(2), so the inner conductive post of the second pair of first conductive posts 134a'(2) can be connected between the second end E2 of the second first bottom circuit pattern 132a(2) and the second end E2 of the second first top circuit pattern 136a(2).In this way, the outer conductive post of the second pair of first conductive posts 134a'(2), the second first bottom circuit pattern 132a(2), the inner conductive post of the second pair of first conductive posts 134a'(2) and the second first top circuit pattern 136a(2) are connected in sequence to form a second coil structure of multiple ring-shaped metal layers 120 stacked around each other. Since the outer conductive post of the second pair of first conductive posts 134a'(2) is connected between the first first top circuit pattern 136a(1) and the second first bottom circuit pattern 132a(2), the first coil structure and the second coil structure are connected to each other and electrically connected. Based on the above, the above configuration can be repeated to obtain a continuous coil structure (e.g., including 12 interconnected coil structures) composed of a first bottom circuit pattern 132a, a first top circuit pattern 136a, and a first conductive post 134a'. This coil structure surrounds the sides S1 of the stacked annular metal layers 120 and can be referred to as a primary coil structure, thereby forming a first conductive path surrounding the sides S1 of the stacked annular metal layers 120. In this embodiment, the primary coil structure surrounds the sides S1 of the annular metal layers 120 in a counterclockwise direction, but this application is not limited thereto. In other embodiments, the primary coil structure can be made to surround in a clockwise direction by adjusting the relative positions of the first bottom circuit pattern 132a, the first top circuit pattern 136a, and the first conductive post 134a'.

[0053] On the other hand, the orthographic projections of multiple second bottom circuit patterns 132b on the first direction D1 and the orthographic projections of multiple second top circuit patterns 136b on the first direction D1 are staggered along the second direction D2, forming a Z-shaped orthographic projection shape. Specifically, similar to the connection method of the first bottom circuit pattern 132a, the first top circuit pattern 136a and the first conductive post 134a', the first end E1 of the Nth second top circuit pattern 136b arranged on the second direction D2 corresponds to the first end E1 of the (N+1)th second bottom circuit pattern 132b arranged on the second direction D2, and the second end E2 of the Nth second top circuit pattern 136b arranged on the second direction D2 corresponds to the second end E2 of the Nth second bottom circuit pattern 132b arranged on the second direction D2. For example, the second end E2 of the first second bottom circuit pattern 132b(1) can correspond to the second end E2 of the first second top circuit pattern 136b(1). Therefore, the inner conductive post of the first pair of second conductive posts 134b'(1) can be connected between the second end E2 of the first second bottom circuit pattern 132b(1) and the second end E2 of the first second top circuit pattern 136b(1). In addition, the first end E1 of the first second top circuit pattern 136b(1) corresponds to the first end E1 of the second second bottom circuit pattern 132b(2). Therefore, the outer conductive post of the second pair of second conductive posts 134b'(2) can be connected between the first end E1 of the first second top circuit pattern 136b(1) and the first end E1 of the second second bottom circuit pattern 132b(2). In this way, the outer conductive post of the first pair of second conductive posts 134b'(1), the first second bottom circuit pattern 132b(1), the inner conductive post of the first pair of second conductive posts 134b'(1), and the first second top circuit pattern 136b(1) are sequentially connected to form a first coil structure surrounding the side S3 of the stacked multiple annular metal layers 120. Similarly, a continuous coil structure (e.g., including 9 interconnected coil structures) can be formed by the second bottom circuit pattern 132b, the second top circuit pattern 136b, and the second conductive posts 134b'. This coil structure surrounds the side S3 of the stacked multiple annular metal layers 120 and can be referred to as a secondary side coil structure, thereby forming a second conductive path surrounding the side S3 of the stacked multiple annular metal layers 120. In this embodiment, the secondary side coil structure surrounds the side S3 of the multiple annular metal layers 120 in a clockwise direction, but this application is not limited to this. In other embodiments, the secondary coil structure can be wound in a clockwise direction by adjusting the relative positions of the second bottom circuit pattern 132b, the second top circuit pattern 136b, and the second conductive post 134b'.

[0054] In some embodiments, the top wiring layer 136 further includes a first top connection line 136c and a second top connection line 136d. The first top connection line 136c may be electrically connected to the outer conductive post of the first pair of first conductive posts 134a'(1) to serve as one of the lines connecting the primary coil structure to the outside. The second top connection line 136d may be physically and electrically connected to the last (i.e., the twelfth top wiring pattern 136a(12)) of the first top wiring pattern 136a. That is, the second top connection line 136d may also be regarded as an extension of the twelfth top wiring pattern 136a(12) to serve as another line connecting the primary coil structure to the outside.

[0055] In some embodiments, the top wiring layer 136 further includes a third top connection line 136e and a fourth top connection line 136f. The third top connection line 136e may be electrically connected to the outer conductive post of the first pair of second conductive posts 134b'(1) as one of the lines connecting the secondary coil structure to the outside. The fourth top connection line 136f may be physically and electrically connected to the last one of the second top wiring patterns 136b (i.e., the ninth top wiring pattern 136b(9)). That is, the fourth top connection line 136f may also be regarded as an extension of the ninth top wiring pattern 136b(9) as another line connecting the secondary coil structure to the outside.

[0056] In some embodiments, the top insulating layer 110t of the top structure 106 may include a plurality of openings (not shown) to expose portions of the first top connection line 136c, a portion of the second top connection line 136d, a portion of the third top connection line 136e, and a portion of the fourth top connection line 136f, so that the exposed portions can serve as contacts cp for external connections.

[0057] From another perspective, the transformer 10 may include an insulator 110', a plurality of annular metal layers 120, a first conductor structure 130a, and a second conductor structure 130b. The insulator 110' may include a stacked top insulating layer 110t, a plurality of insulating layers 110, and a bottom insulating layer 110b. The plurality of annular metal layers 120, the first conductor structure 130a, and the second conductor structure 130b are disposed within the insulator 110' and electrically isolated from each other. The plurality of annular metal layers 120 are arranged in a first direction D1 and overlap each other, with adjacent annular metal layers 120 separated by the insulator 110'. The first conductor structure 130a surrounds one side (e.g., side S1) of the stacked plurality of annular metal layers 120, and the second conductor structure 130b surrounds the other side (e.g., side S3) of the stacked plurality of annular metal layers 120. In some embodiments, the first conductor structure 130a may include a primary coil structure composed of a plurality of first top circuit patterns 136a, a plurality of first conductive pillars 134a', and a plurality of first bottom circuit patterns 132a, wherein the orthographic projections of the plurality of first top circuit patterns 136a in the first direction D1 and the orthographic projections of the plurality of first bottom circuit patterns 132a in the first direction D1 are staggered along the second direction D2. The second conductor structure 130b may include a secondary coil structure composed of a plurality of second top circuit patterns 136b, a plurality of second conductive pillars 134b', and a plurality of second bottom circuit patterns 132b, wherein the orthographic projections of the plurality of second top circuit patterns 136b in the first direction D1 and the orthographic projections of the plurality of second bottom circuit patterns 132b in the first direction D1 are staggered along the second direction D2.

[0058] In some embodiments, the first conductor structure 130a may further include a first top connecting line 136c and a second top connecting line 136d, which are respectively connected to the two ends of the primary coil structure. In some embodiments, the second conductor structure 130b may further include a third top connecting line 136e and a fourth top connecting line 136f, which are respectively connected to the two ends of the secondary coil structure.

[0059] In some embodiments, the width W of the transformer 10 measured in the third direction D3 may be approximately between 1 μm and 0.1 cm. In some embodiments, the length L of the transformer 10 measured in the second direction D2 may be approximately between 1 μm and 0.1 cm.

[0060] In some embodiments, the material of the annular metal layer 120 is substantially the same as the material of the first conductive structure 130a and the second conductive structure 130b, but this application is not limited thereto. In other embodiments, the material of the annular metal layer 120 is different from the material of the first conductive structure 130a and the second conductive structure 130b.

[0061] In some embodiments, the material of insulator 110' may include polyimide (PI), benzocyclobutene (BCB), silicon oxide, silicon nitride, combinations thereof, or other suitable insulating materials.

[0062] Figures 2A to 2E This is a cross-sectional schematic diagram illustrating the manufacturing process of an intermediate layer 204 according to an embodiment of this application. It should be noted that... Figures 2A to 2E The embodiments follow Figures 1A to 1E The component reference numerals and partial content of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0063] Please refer to Figure 2A A first insulating layer 112 is formed on the carrier substrate 200, wherein the first insulating layer 112 has a plurality of first openings OP1. For example, an insulating material layer (not shown) can be formed on the carrier substrate 200 by chemical vapor deposition, physical vapor deposition, spin coating or other suitable deposition processes, and then a plurality of first openings OP1 are formed in the insulating material layer using photolithography to form the first insulating layer 112. The carrier substrate 200 can be, for example, a wafer, glass, ceramic or other suitable material to support the structure subsequently formed thereon.

[0064] Please refer to Figure 2B and Figure 2C An annular metal layer 120 is formed on the first insulating layer 112, and a plurality of vertical connectors 134 are formed on the first insulating layer 112 and in the first opening OP1. The annular metal layer 120 is located between the plurality of vertical connectors 134. For example, such as Figure 2BAs shown, a conductive material layer 120' can be formed over the first insulating layer 112 and in the first opening OP1. The conductive material layer 120' is then patterned to form an annular metal layer 120 over the first insulating layer 112, and a plurality of vertical connectors 134 are formed over the first insulating layer 112 and in the first opening OP1. In some embodiments, the conductive material layer 120' can be formed by chemical vapor deposition, physical vapor deposition, electroplating, electroless plating, or other suitable deposition processes. In some embodiments, the material of the conductive material layer 120' may include copper, tungsten, gold, aluminum, silver, titanium, alloys thereof, combinations thereof, or other suitable conductive materials. In some embodiments, a barrier layer (not shown), such as titanium nitride or a similar material, can be formed on the carrier 200 before the conductive material layer 120' is formed to reduce the diffusion of conductive material into the insulating layer. In some embodiments, the method for patterning the conductive material layer 120' is, for example, to form a patterned photoresist on the conductive material layer 120', and to perform an etching process using the patterned photoresist as a mask to remove a portion of the conductive material layer 120', while the remaining conductive material layer 120' is formed as an annular metal layer 120 and a vertical connector 134. That is, the material of the annular metal layer 120 is substantially the same as the material of the vertical connector 134.

[0065] In some embodiments, the vertical connector 134 may include a horizontal portion h and a vertical portion v, the horizontal portion being located on the first insulating layer 112 and the vertical portion v being located in the first opening OP1. In some embodiments, the top surface of the horizontal portion h of the vertical connector 134 is substantially flush with the top surface of the annular metal layer 120. The bottom surface of the vertical portion v of the vertical connector 134 is substantially flush with the bottom surface of the first insulating layer 112.

[0066] Please refer to Figure 2D A second insulating layer 114 is formed on the annular metal layer 120 and the plurality of vertical connectors 134 to cover the top surface of the annular metal layer 120 and the plurality of vertical connectors 134, wherein the first insulating layer 112 and the second insulating layer 114 together constitute the insulating layer 110. Thus, the annular metal layer 120 and the plurality of vertical connectors 134 are embedded in the insulating layer 110 and are electrically isolated from each other by the insulating layer 110.

[0067] In some embodiments, the first insulating layer 112 and the second insulating layer 114 may comprise thermally conductive insulating materials. In some embodiments, the materials of the first insulating layer 112 and the second insulating layer 114 may each comprise polyimide (PI), benzocyclobutene (BCB), silicon oxide, silicon nitride, combinations thereof, or other suitable insulating materials. The method for forming the second insulating layer 114 may be similar to the method for forming the first insulating layer 112 described above.

[0068] Please refer to Figure 2E A plurality of second openings OP2 are formed in the second insulating layer 114 to expose the vertical connector 134, allowing the vertical connector 134 to be connected to other components in subsequent processes. The method for forming the second openings OP2 can be similar to the method for forming the first opening OP1 described above.

[0069] In some embodiments, the carrier 200 may be peeled off during subsequent processes (such as bonding processes, pressing processes, etc.).

[0070] Based on the above, the manufacturing of intermediate layer 204 can be largely completed. In some embodiments, intermediate layers 104a to 104h of transformer 10 can be manufactured using the above process.

[0071] Figures 3A to 3C This is a cross-sectional schematic diagram illustrating the manufacturing process of a top structure 206 according to an embodiment of this application. It must be noted that... Figures 3A to 3C The embodiments follow Figures 1A to 1E The component reference numerals and partial content of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0072] Please refer to Figure 3A A first top insulating layer 112t is formed on a carrier plate 200t, wherein the first top insulating layer 112t has a plurality of top openings OP3. The carrier plate 200t may be similar to the aforementioned carrier plate 200. The material and forming method of the first top insulating layer 112t are similar to those of the aforementioned first insulating layer 112, and the forming method of the top openings OP3 is similar to that of the aforementioned first opening OP1.

[0073] Please refer to Figure 3B A top wiring layer 136 is formed over the first top insulating layer 112t. For example, a conductive material layer (not shown) may first be formed over the first top insulating layer 112t, and then the conductive material layer may be patterned to form the top wiring layer 136 over the first top insulating layer 112t and in the first opening OP1. In some embodiments, the top wiring layer 136 may include a plurality of first top wiring patterns 136a and a plurality of second top wiring patterns 136b located over the first top insulating layer 112t, and a plurality of top contacts 136v located in the top opening OP3. The plurality of top contacts 136v may correspond to the two ends of the first top wiring pattern 136a and / or the two ends of the second top wiring pattern 136b for connection with other components in subsequent processes.

[0074] Please refer to Figure 3CA second top insulating layer 114t is formed on the top wiring layer 136 to cover the top surface of the top wiring layer 136. The first top insulating layer 112t and the second top insulating layer 114t together constitute the top insulating layer 110t, thus the top wiring layer 136 is embedded in the top insulating layer 110t. The material and formation method of the second top insulating layer 114t are similar to those of the aforementioned second insulating layer 114.

[0075] In some embodiments, an opening (not shown) may be formed in the second top insulating layer 114t to expose a portion of the top wiring layer 136, for example as... Figure 1A The cp node described herein is a node that provides external connections.

[0076] In some embodiments, the carrier 200t can be peeled off during subsequent processes (such as bonding processes, pressing processes, etc.).

[0077] Based on the above, the manufacturing of the top structure 206 can be largely completed. In some embodiments, the top structure 106 of the transformer 10 can be manufactured using the above-described process.

[0078] Figures 4A to 4B This is a cross-sectional schematic diagram illustrating the manufacturing process of a bottom structure 202 according to an embodiment of this application. It must be noted that... Figures 4A to 4B The embodiments follow Figures 1A to 1E The component reference numerals and partial content of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0079] Please refer to Figure 4A A first bottom insulating layer 112b is formed on the carrier plate 200b, and then a conductive material layer 120' is formed on the first bottom insulating layer 112b. The carrier plate 200b may be similar to the aforementioned carrier plate 200. The materials and formation methods of the first bottom insulating layer 112b and the conductive material layer 120' may be similar to those of the aforementioned first insulating layer 112 and conductive material layer 120'.

[0080] Please refer to Figure 4BA patterned conductive material layer 120 is then formed to create a bottom wiring layer 132 over the first bottom insulating layer 112b. In some embodiments, the bottom wiring layer 132 may include a plurality of first bottom wiring patterns 132a and a plurality of second bottom wiring patterns 132b. A second bottom insulating layer 114b is then formed on the bottom wiring layer 132 to cover its top surface. The first bottom insulating layer 112b and the second bottom insulating layer 114b together constitute a bottom insulating layer 110b, thus the bottom wiring layer 132 is embedded within the bottom insulating layer 110b. The material and formation method of the second bottom insulating layer 114b may be similar to those of the aforementioned second insulating layer 114.

[0081] Subsequently, a plurality of bottom openings OP4 are formed in the second bottom insulating layer 110b to expose portions of the bottom wiring layer 132, which can be connected to other components in subsequent processes. In some embodiments, the plurality of bottom openings OP4 may expose both ends of a plurality of first bottom wiring patterns 132a and both ends of a plurality of second bottom wiring patterns 132b. The method of forming the bottom openings OP4 may be similar to the method of forming the first opening OP1 described above.

[0082] In some embodiments, the carrier 200b may be peeled off during subsequent processes (such as bonding processes, pressing processes, etc.).

[0083] Based on the above, the manufacturing of the bottom structure 202 can be largely completed. In some embodiments, the bottom structure 102 of the transformer 10 can be manufactured using the above process.

[0084] Figures 5A to 5B This is a cross-sectional schematic diagram illustrating the manufacturing process of a transformer 20 according to an embodiment of this application. It should be noted that... Figures 5A to 5B The embodiments follow Figures 2A to 2E , Figures 3A to 3C and Figures 4A to 4B The component reference numerals and partial content of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0085] Please refer to Figure 5A It provides a bottom structure 202, multiple intermediate layers 204, and a top structure 206. The bottom structure 202, intermediate layers 204, and top structure 206 can be configured according to the aforementioned... Figures 4A to 4B , Figures 2A to 2E and Figures 3A to 3C The manufacturing process is as follows. In this embodiment, three intermediate layers 204 are provided schematically, but this is not intended to limit the application. The number of intermediate layers 204 can be adjusted according to actual needs.

[0086] Please refer to Figure 5A and Figure 5B The bottom structure 202, multiple intermediate layers 204, and top structure 206 are sequentially stacked and joined, such that the multiple intermediate layers 204 are located between the bottom structure 202 and the top structure 206. The annular metal layers 120 of the multiple intermediate layers 204 overlap each other, and the multiple vertical connectors 134 of the multiple intermediate layers 204 overlap each other. In some embodiments, the bottom structure 202, multiple intermediate layers 204, and top structure 206 can be joined in one or more pressing operations by a lamination process, such that the top wiring layer 136 of the top structure 206 and the bottom wiring layer 132 of the bottom structure 202 are electrically connected to each other through the multiple vertical connectors 134 of the multiple intermediate layers 204.

[0087] In some embodiments, the top wiring layer 136 of the top structure 206 can be joined and electrically connected to the vertical connector 134 corresponding to the topmost of the plurality of intermediate layers 204 via a third conductive connector 140. For example, the third conductive connector 140 can be formed on the top contact 136v of the top structure 206, and the top contact 136v of the top structure 206 can be aligned with the vertical connector 134 of the topmost intermediate layer 204, for example, the third conductive connector 140 of the top structure 206 can be disposed in the second opening OP2 of the second insulating layer 114 of the topmost intermediate layer 204, so that the top contact 136v of the top structure 206 can be joined with the vertical connector 134 of the topmost intermediate layer 204 via the third conductive connector 140. In some embodiments, the first top insulating layer 112t of the top structure 206 can be dielectric-to-dielectric bonded to the second insulating layer 114 of the topmost intermediate layer 204.

[0088] In some embodiments, the third conductive connector 140 may include solder balls, microbumps, or other suitable conductive connectors. The solder ball material may include tin, its alloys, or other suitable solder. The microbump material may include copper, aluminum, gold, silver, tungsten, titanium, its alloys, or other suitable conductive materials. In some embodiments, when the third conductive connector 140 is a solder ball, the top contact 136v can be joined to the vertical connector 134 by performing a reflow soldering process. When the third conductive connector 140 is a microbump, the top contact 136v can be joined to the vertical connector 134 by performing a metal-to-metal bonding process.

[0089] In some embodiments, the vertical connectors 134 corresponding to adjacent intermediate layers 204 can be joined and electrically connected to each other via the first conductive connector 142. For example, the first conductive connector 142 can be formed on the vertical portion v of the vertical connector 134 of the intermediate layer 204, and the first conductive connector 142 can be aligned with the vertical connector 134 of the lower intermediate layer 204, for example, the first conductive connector 142 can be disposed in the second opening OP2 of the second insulating layer 114 of the lower intermediate layer 204, so that the vertical connectors 134 of the intermediate layer 204 can be joined with the vertical connectors 134 of the lower intermediate layer 204 via the first conductive connector 142. In some embodiments, the first insulating layer 112 of the intermediate layer 204 can be dielectric-to-dielectric bonding with the second insulating layer 114 of the lower intermediate layer 204. Repeating the above steps can join multiple intermediate layers 204 to form an intermediate structure 204'.

[0090] In some embodiments, an additional conductive connector may be formed in the second opening OP2 of the second insulating layer 114 of the lower intermediate layer 204 to facilitate its bonding with the upper intermediate layer 204. The additional conductive connector and the first conductive connector 142 may be similar to the aforementioned third conductive connector 140.

[0091] In some embodiments, the bottom wiring layer 132 of the bottom structure 202 can be joined and electrically connected to the vertical connector 134 corresponding to the bottommost of the plurality of intermediate layers 204 via a second conductive connector 144. For example, the second conductive connector 144 can be formed on the vertical portion v of the vertical connector 134 of the bottommost intermediate layer 204, and the second conductive connector 144 can be aligned with the bottom opening OP4 of the second bottom insulating layer 114b of the bottom structure 202, that is, aligned with the two ends of the first bottom wiring pattern 132a and the second bottom wiring pattern 132b. In this way, the vertical connector 134 of the bottommost intermediate layer 204 can be joined to the bottom wiring layer 132 of the bottom structure 202 via the second conductive connector 144. In some embodiments, the first insulating layer 112 of the bottommost intermediate layer 204 can be dielectric-to-dielectric bonded to the second bottom insulating layer 114b of the bottom structure 202.

[0092] In some embodiments, an additional conductive connector may be formed in the bottom opening OP4 of the second bottom insulating layer 114b of the bottom structure 202 to facilitate its bonding with the bottommost intermediate layer 204. The additional conductive connector and the second conductive connector 144 may be similar to the aforementioned third conductive connector 140.

[0093] Based on the above, the manufacturing of transformer 20 can be largely completed. Transformer 20 is manufactured using semiconductor processes, comprising a bottom structure 202, intermediate layers 204, and a top structure 206. Then, an appropriate number of intermediate layers are selected according to requirements, and the bottom structure 202, multiple intermediate layers 204, and top structure 206 are joined together to form transformer 20. In this way, transformer 20 can be manufactured efficiently and flexibly, and the size of transformer 20 can be reduced due to semiconductor processes.

[0094] A three-dimensional schematic diagram of transformer 20 can be similar to Figure 1A ,and Figure 5B It can be along Figure 1A A cross-sectional view of one embodiment of section line A-A'.

[0095] Please refer to Figure 5B The transformer 20 may include an insulator 110', a plurality of annular metal layers 120, a first conductor structure 130a, and a second conductor structure 130b. The insulator 110' may include a stacked top insulating layer 110t, a plurality of insulating layers 110, and a bottom insulating layer 110b. The plurality of annular metal layers 120, the first conductor structure 130a, and the second conductor structure 130b are disposed within the insulator 110' and electrically isolated from each other. The plurality of annular metal layers 120 are arranged in a first direction D1 and overlap each other, with adjacent annular metal layers 120 separated by the insulator 110'. The first conductor structure 130a surrounds one side (e.g., side S1) of the stacked plurality of annular metal layers 120, and the second conductor structure 130b surrounds the other side (e.g., side S3) of the stacked plurality of annular metal layers 120.

[0096] In some embodiments, the first conductor structure 130a may include a primary coil structure composed of a plurality of first top circuit patterns 136a, a plurality of first conductive posts 134a', and a plurality of first bottom circuit patterns 132a, wherein the orthographic projections of the plurality of first top circuit patterns 136a in the first direction D1 and the orthographic projections of the plurality of first bottom circuit patterns 132a in the first direction D1 are staggered along the second direction D2. In some embodiments, the first conductive posts 134a' may include staggered stacked first vertical connectors 134a and first conductive connectors 142. In some embodiments, the first conductive posts 134a' may be connected to the first top circuit patterns 136a via a third conductive connector 140 and a top contact 136v. In some embodiments, the first conductive posts 134a' may be connected to the first bottom circuit patterns 132a via a second conductive connector 144.

[0097] In some embodiments, the material of the first vertical connector 134a is different from the material of the first conductive connector 142. However, this application is not limited thereto, and in other embodiments, the material of the first vertical connector 134a is the same as the material of the first conductive connector 142.

[0098] In some embodiments, the second conductor structure 130b may include a secondary coil structure composed of a plurality of second top circuit patterns 136b, a plurality of second conductive posts 134b', and a plurality of second bottom circuit patterns 132b, wherein the orthographic projections of the plurality of second top circuit patterns 136b in the first direction D1 and the orthographic projections of the plurality of second bottom circuit patterns 132b in the first direction D1 are staggered along the second direction D2. In some embodiments, the second conductive posts 134b' may include staggered stacked second vertical connectors 134b and first conductive connectors 142. In some embodiments, the second conductive posts 134b' may be connected to the second top circuit patterns 136b via a third conductive connector 140 and a top contact 136v. In some embodiments, the second conductive posts 134b' may be connected to the second bottom circuit patterns 132b via a second conductive connector 144.

[0099] In some embodiments, the second vertical connector 134b is made of a different material than the first conductive connector 142. However, this application is not limited thereto, and in other embodiments, the second vertical connector 134b is made of the same material as the first conductive connector 142.

[0100] Figures 6A to 6F This is a cross-sectional schematic diagram illustrating the manufacturing process of a transformer 30 according to an embodiment of this application. It should be noted that... Figures 6A to 6F The embodiments follow Figures 1A to 1E The component reference numerals and partial content of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0101] Please refer to Figure 6A A first insulating layer 312 is formed on a carrier board 300, a bottom circuit layer 132 is formed on the first insulating layer 312, and then a second insulating layer 314 is formed on the bottom circuit layer 132. Subsequently, a plurality of bottom openings OP5 are formed in the second insulating layer 314 to expose portions of the bottom circuit layer 132. The above process is similar to... Figures 4A to 4BThe described process will not be elaborated here. In some embodiments, the bottom circuit layer 132, the first insulating layer 312, and the second insulating layer 314 may constitute the bottom structure 302. In some embodiments, the first insulating layer 312 and the second insulating layer 314 may be regarded as the bottom insulating layer 110b of the bottom structure 302, and the bottom circuit layer 132 is embedded in the bottom insulating layer 110b.

[0102] Please refer to Figure 6B A conductive material layer 320' is formed on the second insulating layer 314 and in the bottom opening OP5. Then, as... Figure 6C As shown, a patterned conductive material layer 320' is used to form an annular metal layer 120 on the second insulating layer 314, and a vertical connector 134 is formed on the second insulating layer 314 and in the bottom opening OP5. Then, as... Figure 6D As shown, a third insulating layer 316 is formed on the annular metal layer 120 and the vertical connector 134. The above process is similar to... Figures 2B to 2D The described process will not be elaborated here. In some embodiments, the annular metal layer 120, the vertical connector 134, and the third insulating layer 316 may constitute an intermediate layer 304. In some embodiments, the third insulating layer 316 may be regarded as the insulating layer 110 of the intermediate layer 304, and the annular metal layer 120 is embedded in the insulating layer 110. The annular metal layer 120 is encapsulated by the insulating layer 110 and the bottom insulating layer 110b of the bottom structure 302. In some embodiments, the vertical connector 134 of the intermediate layer 304 is located in the insulating layer 110 of the intermediate layer 304 and also extends through a portion of the bottom insulating layer 110b of the bottom structure 302 to be physically and electrically connected to the bottom wiring layer 132, that is, the vertical connector 134 of the intermediate layer 304 is in direct contact with the bottom wiring layer 132.

[0103] Please refer to Figure 6D Multiple openings OP6 are formed in the third insulating layer 316 to expose the vertical connector 134, similar to Figure 2E The process described.

[0104] Please refer to Figure 6E The above can be repeated. Figures 6B to 6DThe process involves forming multiple intermediate layers 304 on top of the bottom structure 302. The stacked intermediate layers 304 can constitute an intermediate structure 304'. The vertical connectors 134 of the intermediate layers 304 are physically and electrically connected to their corresponding vertical connectors 134 of adjacent intermediate layers 304, meaning that the vertical connectors 134 of the intermediate layers 304 can directly contact their corresponding vertical connectors 134 of adjacent intermediate layers 304. The annular metal layer 120 of the intermediate layer 304 is encapsulated by an insulating layer 110 and the insulating layers 110 of adjacent intermediate layers 304. In this embodiment, three intermediate layers 304 are illustrated exemplary, but this is not intended to limit the application; the intermediate layers 304 can be adjusted according to actual needs.

[0105] Please refer to Figure 6F A top wiring layer 136 is formed on the insulating layer 110 of the topmost intermediate layer 304 and in its openings. A portion of the top wiring layer 136 (i.e., the top wiring layer 136 located in the openings of the insulating layer 110 of the topmost intermediate layer 304) extends through the insulating layer 110 of the topmost intermediate layer 304 to be physically and electrically connected to the vertical connector 134 of the topmost intermediate layer 304; that is, the top wiring layer 136 can directly contact the vertical connector 134 of the topmost intermediate layer 304. Then, a top insulating layer 110t is formed on the top wiring layer 136. The above process is similar to... Figures 3B to 3C The described process will not be elaborated here. In some embodiments, the top wiring layer 136 and the top insulating layer 110t may constitute the top structure 306.

[0106] In some embodiments, the carrier board 300 may be peeled off. In other embodiments, the carrier board 300 may not be peeled off. For example, the carrier board 300 may be a device substrate, circuit board or other suitable substrate having electronic components, circuits and other devices disposed thereon or therein, and the transformer 30 may be manufactured during the manufacturing process of the device on the carrier board 300 and integrated with the device on the carrier board 300.

[0107] Based on the above, the manufacturing of transformer 30 can be largely completed. Transformer 30 can be manufactured by stacking layers sequentially using semiconductor process methods, thus it can be integrated with the manufacturing of other devices in the semiconductor process, thereby effectively utilizing space and reducing the size of transformer 30.

[0108] The three-dimensional schematic diagram of transformer 30 can be similar to Figure 1A , Figure 6F It can be along Figure 1A A cross-sectional view of one embodiment along section line A-A'. Please refer to... Figure 6FTransformer 30 is similar to transformer 20, with the main difference being that: in transformer 30, the first conductive post 134a' in the first conductor structure 130a is formed by directly connecting multiple first vertical connectors 134a, and the second conductive post 134b' in the second conductor structure 130b is formed by directly connecting multiple second vertical connectors 134b. In some embodiments, the first vertical connector 134a and the second vertical connector 134b may each include a horizontal portion h and a vertical portion v (e.g., ...). Figure 2C As shown), the horizontal part h is located on the vertical part v, and the width of the horizontal part h can be greater than or equal to the width of the vertical part v.

[0109] In summary, the transformer of this application is manufactured using semiconductor processes, which effectively reduces its size to form an ultra-thin transformer, thus facilitating its application in small-volume products. Furthermore, the transformer of this application can be easily integrated with semiconductor devices, achieving efficient application in terms of process flow and space.

[0110] The embodiments and / or implementation methods described above are merely preferred embodiments and / or implementation methods for implementing the technology of this application, and are not intended to limit the implementation methods of the technology of this application in any way. Any person skilled in the art may make some modifications or alterations to other equivalent embodiments without departing from the scope of the technical means disclosed in this application, but these should still be regarded as the technology or embodiments that are substantially the same as those of this application.

Claims

1. A method for manufacturing a transformer, characterized in that, The method for manufacturing the transformer includes: Forming a plurality of intermediate layers, each of the plurality of intermediate layers comprising: Insulating layer; An annular metal layer, embedded within the insulating layer; and Multiple vertical connectors are disposed in the insulating layer and arranged along the inner and outer sides of the annular metal layer, wherein the insulating layer electrically isolates the multiple vertical connectors from the annular metal layer; A top structure is formed, wherein the top structure includes a top wiring layer embedded in a top insulating layer; A bottom structure is formed, wherein the bottom structure includes a bottom circuit layer embedded in a bottom insulating layer; The bottom structure, the plurality of intermediate layers, and the top structure are stacked sequentially in a first direction, wherein the annular metal layers of the plurality of intermediate layers overlap each other, and the plurality of vertical connectors of the plurality of intermediate layers overlap each other; and The bottom structure, the plurality of intermediate layers, and the top structure are joined together, wherein the top wiring layer and the bottom wiring layer are electrically connected to each other through the plurality of vertical connectors of the plurality of intermediate layers.

2. The method for manufacturing a transformer according to claim 1, characterized in that, The plurality of vertical connectors for each of the plurality of intermediate layers include: A plurality of first vertical connectors are located in the insulating layer and are arranged in pairs on both sides of the first side of the annular metal layer; and Multiple second vertical connectors are located in the insulating layer and are arranged in pairs on both sides of the second side of the annular metal layer, wherein the second side is opposite to the first side.

3. The method for manufacturing a transformer according to claim 2, characterized in that, The top wiring layer of the top structure includes multiple first top wiring patterns and multiple second top wiring patterns, and the bottom wiring layer of the bottom structure includes multiple first bottom wiring patterns and multiple second bottom wiring patterns. When the bottom structure, the plurality of intermediate layers and the top structure are stacked in sequence, the plurality of first top circuit patterns and the plurality of first bottom circuit patterns correspond to the first side of the annular metal layer, and the plurality of second top circuit patterns and the plurality of second bottom circuit patterns correspond to the second side of the annular metal layer.

4. The method for manufacturing a transformer according to claim 3, characterized in that, The plurality of first vertical connectors of each of the plurality of intermediate layers correspond to the two ends of each of the plurality of first bottom circuit patterns, and the plurality of second vertical connectors of each of the plurality of intermediate layers correspond to the two ends of each of the plurality of second bottom circuit patterns.

5. The method for manufacturing a transformer according to claim 3, characterized in that, The plurality of first top circuit patterns and the plurality of first bottom circuit patterns are electrically connected to each other through the plurality of first vertical connectors of the plurality of intermediate layers to form a first conductive path surrounding the first side of the annular metal layer. The plurality of second top circuit patterns and the plurality of second bottom circuit patterns are electrically connected to each other through the plurality of second vertical connectors of the plurality of intermediate layers to form a second conductive path surrounding the second side of the annular metal layer.

6. The method for manufacturing a transformer according to claim 3, characterized in that, When the bottom structure, the plurality of intermediate layers and the top structure are stacked in sequence, the first end of the Nth first top circuit pattern arranged in the second direction corresponds to the first end of the (N+1)th first bottom circuit pattern arranged in the second direction, and the second end of the Nth first top circuit pattern arranged in the second direction corresponds to the second end of the Nth first bottom circuit pattern arranged in the second direction. The first end refers to the end near the outer side of the annular metal layer, and the second end refers to the end near the inner side of the annular metal layer. N is a positive integer.

7. The method for manufacturing a transformer according to claim 1, characterized in that, The steps for forming each of the plurality of intermediate layers include: A first insulating layer is formed, wherein the first insulating layer has a plurality of first openings; The annular metal layer is formed on top of the first insulating layer; The plurality of vertical connectors are formed on the first insulating layer and in the plurality of first openings; A second insulating layer is formed on the annular metal layer and the plurality of vertical connectors to cover the top surface of the annular metal layer and the plurality of vertical connectors, wherein the first insulating layer and the second insulating layer constitute the insulating layer; and A plurality of second openings are formed in the second insulating layer to expose the plurality of vertical connectors.

8. The method for manufacturing a transformer according to claim 2, characterized in that, The steps for forming the top structure include: A first top insulating layer is formed, wherein the first top insulating layer has a plurality of top openings; A conductive material layer is formed on top of the first top insulating layer; The conductive material layer is patterned to form a top wiring layer over the first top insulating layer and in the plurality of top openings, wherein the top wiring layer includes a top wiring pattern located over the first top insulating layer and a plurality of top contacts located in the plurality of top openings, the plurality of top contacts corresponding to the two ends of the top wiring pattern; and A second top insulating layer is formed on the top line layer.

9. The method for manufacturing a transformer according to claim 1, characterized in that, The steps for forming the bottom structure include: Form the first bottom insulating layer; A conductive material layer is formed on top of the first bottom insulating layer; The conductive material layer is patterned to form the bottom wiring layer over the first bottom insulating layer, wherein the bottom wiring layer includes a plurality of bottom wiring patterns; A second bottom insulating layer is formed on the bottom circuit layer; and Multiple bottom openings are formed in the second bottom insulating layer to expose both ends of each of the multiple bottom circuit patterns.

10. The method for manufacturing a transformer according to claim 1, characterized in that, A method for joining the bottom structure, the plurality of intermediate layers, and the top structure includes: The vertical connectors corresponding to adjacent intermediate layers are joined and electrically connected to each other through the first conductive connector. The bottom circuit layer of the bottom structure is joined and electrically connected to the vertical connector corresponding to the bottommost layer of the plurality of intermediate layers via a second conductive connector; and The top wiring layer of the top structure is joined and electrically connected to the vertical connector corresponding to the topmost layer among the plurality of intermediate layers via a third conductive connector.

11. The method for manufacturing a transformer according to claim 5, characterized in that, The first conductive connector, the second conductive connector, and the third conductive connector include solder balls or microbumps.

12. The method for manufacturing a transformer according to claim 1, characterized in that, After the bottom structure, the plurality of intermediate layers and the top structure are joined, the plurality of vertical connectors at the bottommost layer of the plurality of intermediate layers extend through a portion of the bottom insulating layer of the bottom structure to be physically and electrically connected to the bottom wiring layer of the bottom structure, and a portion of the top wiring layer of the top structure extends through the topmost insulating layer of the plurality of intermediate layers to be physically and electrically connected to the plurality of vertical connectors at the topmost layer of the plurality of intermediate layers.

13. A method for manufacturing a transformer, characterized in that, The method for manufacturing the transformer includes: A first insulating layer is formed on the carrier plate; A bottom circuit layer is formed on the first insulating layer, wherein the bottom circuit layer includes a plurality of first bottom circuit patterns and a plurality of second bottom circuit patterns; A second insulating layer is formed on the bottom circuit layer; An intermediate layer is formed on the second insulating layer, wherein the intermediate layer comprises: Insulating layer; A ring-shaped metal layer is embedded within the insulating layer; A plurality of first vertical connectors are disposed in the insulating layer and arranged along the inner and outer sides of the first side edge of the annular metal layer; and Multiple second vertical connectors are disposed in the insulating layer and along the inner and outer sides of the second side of the annular metal layer, the second side being opposite to the first side; A top wiring layer is formed on top of the intermediate layer, wherein the top wiring layer includes a plurality of first top wiring patterns and a plurality of second top wiring patterns. The plurality of first top circuit patterns and the plurality of first bottom circuit patterns are electrically connected to each other through the plurality of first vertical connectors of the intermediate layer to form a first conductive path surrounding the first side of the annular metal layer, and the plurality of second top circuit patterns and the plurality of second bottom circuit patterns are electrically connected to each other through the plurality of second vertical connectors of the intermediate layer to form a second conductive path surrounding the second side of the annular metal layer.

14. The method for manufacturing a transformer according to claim 13, characterized in that, The top wiring layer extends through the insulating layer of the intermediate layer to directly contact a plurality of first vertical connectors or a plurality of second vertical connectors of the intermediate layer.

15. The method for manufacturing a transformer according to claim 13, characterized in that, The plurality of first vertical connectors or the plurality of second vertical connectors of the intermediate layer extend through the second insulating layer to make direct contact with the bottom circuit layer.

16. A transformer, characterized in that, The transformer includes: The bottom structure includes a bottom circuit layer embedded in a bottom insulating layer; A top structure, disposed above the bottom structure, wherein the top structure includes a top wiring layer embedded in a top insulating layer; and An intermediate structure is disposed between the bottom structure and the top structure, wherein the intermediate structure includes: Insulating layer; Multiple annular metal layers are stacked on top of each other in the insulating layer in a first direction; and Multiple conductive pillars are disposed within the insulating layer and on the inner and outer sides of the stacked multiple annular metal layers, wherein the insulating layer electrically isolates the multiple conductive pillars from the multiple annular metal layers. The top circuit layer and the bottom circuit layer are electrically connected through the plurality of conductive pillars of the intermediate structure.

17. The transformer according to claim 16, characterized in that, The plurality of conductive pillars include: A plurality of first conductive pillars are located in the insulating layer and are arranged in pairs on both sides of the first side of the stacked plurality of annular metal layers; and Multiple second conductive pillars are located in the insulating layer and are arranged in pairs on both sides of the second side of the stacked multiple annular metal layers, wherein the second side is opposite to the first side.

18. The transformer according to claim 17, characterized in that, The top wiring layer of the top structure includes multiple first top wiring patterns and multiple second top wiring patterns, and the bottom wiring layer of the bottom structure includes multiple first bottom wiring patterns and multiple second bottom wiring patterns. The plurality of first top circuit patterns and the plurality of first bottom circuit patterns correspond to the first sides of the stacked plurality of annular metal layers, and the plurality of second top circuit patterns and the plurality of second bottom circuit patterns correspond to the second sides of the stacked plurality of annular metal layers. The orthographic projections of the plurality of first top line patterns in the first direction and the orthographic projections of the plurality of first bottom line patterns in the first direction are staggered along the second direction.

19. The transformer according to claim 16, characterized in that, Each of the plurality of conductive pillars includes vertical connectors and conductive connectors that are staggered and stacked in the first direction, wherein the material of the vertical connectors is different from the material of the conductive connectors.

20. The transformer according to claim 19, characterized in that, The vertical connector is made of the same material as the plurality of annular metal layers.

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