Double-pulse confinement ion current energy screening device and method

Abstract

The invention discloses a double-pulse confinement ion current energy screening device and method, and relates to the field of ion beam control, the device comprises a plasma source, a deflection magnetic field, a parallel plate electrode, an ion beam control electrode, a capillary tube beam and a deposition target disc; the plasma source is used for providing plasma; the deflecting magnetic field is used for longitudinally scanning and homogenizing the plasma according to a vertical electric field to obtain an ion beam; the parallel plate electrode is used for providing an electric field orthogonal to the vertical electric field and controlling focusing and deflection of the ion beam through the voltage of the parallel plate electrode to obtain a deflected ion beam; the ion beam control electrode is used for adjusting the energy of the deflected ion beam to obtain a single-energy ion beam; the capillary tube beam is used for leading out single ions in the single-energy ion beam; the deposition target disc is used for receiving single ions in the single-energy ion beam; according to the invention, single-energy single-ion extraction can be realized, and the stability and precision of a single-ion beam can be ensured.

Description

Technical Field

[0001] This application relates to the field of ion beam control, and in particular to a dual-pulse confined ion current energy screening device and method. Background Technology

[0002] With the rapid development of technology, traditional manufacturing faces severe challenges in manufacturing precision, material performance, and device integration. To overcome these bottlenecks, core components for high-end equipment in fields such as semiconductor manufacturing, new displays, aerospace, and ultra-precision instruments are accelerating towards extreme dimensions and functions. Against this backdrop, atomic-level manufacturing technology, capable of producing devices and materials with superior performance and smaller size, is driving leaps in the performance of individual devices or entire systems, thereby pushing manufacturing precision and product performance to higher levels.

[0003] However, there are still many serious technical difficulties and challenges in moving atomic manufacturing from the laboratory to future commercialization. Its core lies in the single, precise and controllable manipulation of matter, and the single-energy single-ion technology is the key breakthrough to achieving this goal. However, existing ion screening technologies still have significant drawbacks: First, at the limit of atomic-level manipulation, existing ion screening technologies have significant limitations. Traditional magnetic analyzers are limited by the uniformity and stability of the magnetic field, while electrostatic analyzers are affected by field distortion and space charge effects, resulting in limited energy resolution and difficulty in obtaining truly single-energy ion beams. Furthermore, thermal vibrations, quantum effects, and environmental interference can easily cause atomic displacement, severely affecting the accuracy, stability, and consistency of the processing. Second, in terms of operational efficiency, existing devices have low energy screening efficiency and significant beam intensity loss. Coupled with the inherently low efficiency of assembling individual atoms, they cannot meet the high-throughput and high-precision processing requirements of atomic-level manufacturing. In addition, in terms of environmental dependence, most quantum precision manipulations require extremely harsh conditions such as ultra-low temperatures (close to absolute zero) and ultra-high vacuum. The equipment is complex and energy consumption is extremely high. The environmental maintenance costs and technical challenges have not yet been solved in industrial applications, greatly limiting practical application scenarios.

[0004] These technological bottlenecks severely restrict the application of atomic manufacturing in the field of microelectronics. In particular, in highly demanding process steps such as quantum bit preparation and atomic-level precision doping, existing technologies cannot provide single-ion beams with sufficient precision and stability, making it difficult to fully leverage the advantages of atomic manufacturing.

[0005] Therefore, based on the above problems, there is an urgent need to provide a dual-pulse confined ion current energy screening device that can achieve single-energy single-ion extraction and ensure the stability and accuracy of the single-ion beam. Summary of the Invention

[0006] The purpose of this application is to provide a dual-pulse confined ion current energy screening device and method, which can realize single-energy single-ion extraction and ensure the stability and accuracy of the single-ion beam.

[0007] To achieve the above objectives, this application provides the following solution: In a first aspect, this application provides a dual-pulse confined ion current energy screening device, which includes: A plasma source is used to provide plasma. The deflection magnetic field, in conjunction with the plasma source, is used to longitudinally scan and homogenize the plasma according to the vertical electric field to obtain an ion beam. Parallel plate electrodes are used to provide a parallel electric field orthogonal to the vertical electric field, and the voltage of the parallel plate electrodes controls the focusing and deflection of the ion beam to obtain a deflected ion beam. An ion beam control electrode, vertically positioned between parallel plate electrodes, is used to adjust the energy of the deflected ion beam to obtain a single-energy ion beam. The ion beam control electrode includes an electron suppression electrode and an energy adjustment electrode, both equipped with circular holes. The electron suppression electrode and the energy adjustment electrode are connected to corresponding power supplies to adjust the ion energy. The capillary bundle, with one end connected to the circular hole of the electron suppression electrode and the other end connected to the circular hole of the energy regulation electrode, is used to extract single ions from the single-energy ion beam. A deposition target disk used to receive single ions from a single-energy ion beam.

[0008] Optionally, the dual-pulse confined ion current energy screening device further includes: a parallel plate electrode power supply; The power supply for the parallel plate electrode is connected to the parallel plate electrode and is used to provide voltage to the parallel plate electrode.

[0009] Optionally, the dual-pulse confined ion current energy screening device further includes: a suppression electrode power supply and a regulating electrode power supply; The power supply for the suppression electrode is connected to the electronic suppression electrode and is used to control the voltage of the electronic suppression electrode; The power supply for the regulating electrode is connected to the energy regulating electrode and is used to control the voltage of the energy regulating electrode.

[0010] Optionally, the dual-pulse confined ion current energy screening device further includes: an automatic drive shaft; The automatic drive shaft is mechanically connected to the deposition target disk and is used to control the rotation of the deposition target disk.

[0011] Optionally, the rotation speed of the automatic drive shaft is 1R / min to 5R / min.

[0012] Optionally, the distance between the electron suppression electrode and the energy regulation electrode is 5mm to 20mm.

[0013] Optionally, both the electron suppression electrode and the energy regulation electrode are disk-shaped electrodes.

[0014] Optionally, the diameter of the circular hole is 0.2mm to 2mm, and the center distance between the circular holes is 1mm to 5mm.

[0015] Optionally, the length of the capillary bundle is 10mm~100mm, and the diameter is 10mm. ~100 .

[0016] Secondly, this application provides a dual-pulse confined ion current energy screening method, implemented by the aforementioned dual-pulse confined ion current energy screening device. The dual-pulse confined ion current energy screening method includes: Acquiring plasma; A deflection magnetic field is used to longitudinally scan and homogenize the plasma to obtain an ion beam; the ion beam is an ion beam with a magnetic stiffness lower than a preset threshold. The ion beam is focused and deflected using parallel plate electrodes to obtain the deflected ion beam. The energy of the deflected ion beam is adjusted using an ion beam control electrode to obtain a single-energy ion beam. Single ions from a single-energy ion beam are extracted using a capillary bundle and then transmitted to a deposition target.

[0017] According to the specific embodiments provided in this application, this application has the following technical effects: This application provides a dual-pulse confined ion current energy screening device and method. By providing a vertical electric field through a deflecting magnetic field, longitudinal scanning of plasma is achieved, further homogenizing and filtering the output of ion clusters. By setting the cross field of the magnetic field and electric field and the energy adjustment electrode (acceleration / deceleration electrode), the extraction of a single energy ion beam is realized. Finally, the single ion is extracted through the capillary bundle between the circular holes, realizing the confinement of ion energy, direction, size and flux, laying the foundation for atomic-level manufacturing and realizing the precise control of single ions. It has significant advantages in achieving the consistency and stability of single ion extraction in atomic-level manufacturing. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of a dual-pulse confined ion current energy screening device according to an embodiment of this application; Figure 2 This is a schematic diagram of a dual-pulse confined ion current energy screening method in one embodiment of this application.

[0020] Figure reference numerals: 101-Plasma source, 102-Parallel plate electrode positive electrode, 103-Electron suppression electrode, 104-Energy regulation electrode, 105-Suppression electrode power supply, 106-Regulation electrode power supply, 107-Ground electrode, 108-Parallel plate electrode power supply, 109-Automatic drive shaft, 110-Deposition target disk, 111-Parallel plate electrode negative electrode, 112-Deflection magnetic field, 113-Capillary bundle. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0022] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0023] In one exemplary embodiment, such as Figure 1 As shown, a dual-pulse confined ion current energy screening device is provided, including: a plasma source 101, a deflection magnetic field 112, a parallel plate electrode, an ion beam control electrode, a capillary bundle 113, and a deposition target disk 110.

[0024] Plasma source 101 is used to provide plasma. Specifically, plasma source 101 is the foundation of the dual-pulse confined ion current energy screening device, used to provide stable and controllable plasma; the plasma includes positive ions and electrons. Selecting a suitable plasma source 101 can optimize the ion species and energy distribution, improving the quality of the ion beam; for example, if the process requires high-purity aluminum ions, the energy of the plasma source can be adjusted to 100 eV ± 5 eV, and the ion beam density can be greater than 1 mA / cm². 2 At the same time, its operating parameters (gas pressure, power, etc.) are precisely controlled to ensure that the output ion beam meets all requirements.

[0025] The deflection magnetic field 112 works in conjunction with the plasma source 101 to longitudinally scan and homogenize the plasma according to the vertical electric field, thereby obtaining an ion beam. Specifically, the magnetic field strength of the deflection magnetic field 112 is -50mT to +50mT. The deflection magnetic field can filter out ions with low magnetic stiffness, further improving the quality of the ion beam and reducing the risk of sample loss.

[0026] Parallel plate electrodes are used to provide a parallel electric field orthogonal to the vertical electric field, and the voltage of the parallel plate electrodes controls the focusing and deflection of the ion beam to obtain a deflected ion beam.

[0027] Specifically, the parallel plate electrode includes a positive electrode 102 and a negative electrode 111. Both the positive and negative electrodes are grounded to provide a parallel electric field with a strength of 0V / cm to ±50V / cm. Furthermore, the positions of the positive and negative electrodes 102 and 111 are interchangeable. By adjusting the voltage of the parallel plate electrodes, the strength and direction of the parallel electric field can be precisely controlled, enabling the focusing and deflection of the ion beam, thus achieving precise control of the ion beam.

[0028] The ion beam control electrode is vertically positioned between the parallel plate electrodes to adjust the energy of the deflected ion beam, thereby obtaining a single-energy ion beam.

[0029] Specifically, the ion beam control electrode includes an electron suppression electrode 103 and an energy adjustment electrode 104, both equipped with circular holes. In this application, the distance between the electron suppression electrode 103 and the energy adjustment electrode 104 is 5mm to 20mm. Both are the same size, being disc-shaped electrodes. The diameter of the circular holes in the disc-shaped electrodes is 0.2mm to 2mm, and the center distance between the circular holes is 1mm to 5mm. The electron suppression electrode 103 and the energy adjustment electrode 104 are connected to corresponding power supplies. By adjusting their respective voltages, the energy of the deflected ion beam is adjusted, thereby achieving the extraction of a single-energy ion beam. This application achieves more precise energy adjustment and single-energy ion beam extraction through the combination of a cross field (deflecting magnetic field 112 and parallel electric field) and acceleration / deceleration electrodes (energy adjustment electrode 104), further improving the quality of the ion beam.

[0030] One end of the capillary bundle 113 is connected to the circular hole of the electron suppression electrode 103, and the other end is connected to the circular hole of the energy regulation electrode 104, which is used to extract single ions from the single-energy ion beam.

[0031] Specifically, the ion beam passes through the capillary bundle, and the design of the capillary bundle 113 not only enables the extraction of single ions but also reduces the risk of sample damage.

[0032] The deposition target disk 110 is used to receive and place single ions from a single-energy ion beam, which is the deposition sample.

[0033] The dual-pulse confined ion current energy screening device also includes: a parallel plate electrode power supply 108, a ground electrode 107, a suppression electrode power supply 105, an adjustment electrode power supply 106, and an automatic drive shaft 109.

[0034] The parallel plate electrode power supply 108 is connected to the parallel plate electrode and is used to provide voltage to the parallel plate electrode to establish a parallel electric field. The voltage range of the parallel plate electrode power supply 108 is -1000V to +1000V. By precisely controlling the voltage of the parallel plate electrode, the parallel plate electrode power supply 108 can achieve precise control of the strength and direction of the parallel electric field, thereby achieving precise control of the ion beam.

[0035] The grounding electrode 107 is grounded together with the vacuum chamber, which can provide a stable electric field environment and ensure the stable operation of the dual-pulse confined ion current energy screening device. A stable electric field environment is the key to ensuring the stability of the ion beam.

[0036] The suppression electrode power supply 105 is connected to the electron suppression electrode 103 and is used to control the voltage of the electron suppression electrode 103; the voltage range of the suppression electrode power supply 105 is -200V to -500V. The regulating electrode power supply 106 is connected to the energy regulating electrode 104 and is used to control the voltage of the energy regulating electrode 104; the voltage range of the regulating electrode power supply 106 is -5000V to +2000V. By precisely controlling the voltages of the electron suppression electrode 103 and the energy regulating electrode 104, the suppression electrode power supply 105 and the regulating electrode power supply 106 achieve precise regulation of ion energy, thereby achieving precise control of the ion beam.

[0037] An automatic drive shaft 109 is mechanically connected to a deposition target disk 110 to control the rotation of the deposition target disk 110. Compared with a traditional fixed target disk, this application achieves a rotating target disk design through the mechanical connection between the automatic drive shaft 109 and the deposition target disk 110, thereby realizing uniform deposition and improving sample quality.

[0038] In one exemplary embodiment, such as Figure 2 As shown, a dual-pulse confined ion current energy screening method is provided, comprising S1-S5, wherein: S1: Obtain plasma.

[0039] Plasma and plasma data are acquired from plasma source 101; the plasma data includes information such as ion species and energy distribution.

[0040] S2: The plasma is longitudinally scanned and homogenized using a deflection magnetic field to obtain an ion beam.

[0041] The deflection magnetic field 112 provides a vertical electric field, which enables longitudinal scanning and homogenization of the plasma, filters the plasma, selects low magnetic stiffness ions, and forms an ion beam; low magnetic stiffness ions are ions with magnetic stiffness below a preset threshold.

[0042] S3: The ion beam is focused and deflected using parallel plate electrodes to obtain the deflected ion beam.

[0043] The ion beam is focused and deflected by adjusting the voltage of the parallel plate electrodes.

[0044] S4: The energy of the deflected ion beam is adjusted using ion beam control electrodes to obtain a single-energy ion beam.

[0045] By adjusting the voltage of the electron suppression electrode 103 and the energy regulation electrode 104, the energy of the deflected ion beam is precisely adjusted, thereby extracting a single-energy ion beam.

[0046] S5: Use capillary bundles to extract single ions from a single-energy ion beam and send the single ions to the deposition target disk.

[0047] Single ions drawn from the capillary bundle form a monoenergetic, continuously tunable single-ion state ion current with an energy range of 30 eV to 400 eV, and are deposited on the deposition target disk 110.

[0048] This application selects the ion velocity by setting up a cross-field of electric and magnetic fields. The formula for calculating the ion velocity is as follows: ,in, For ion velocity, For electric field strength, The magnetic field strength is [value missing]. Furthermore, this application combines a cross-field, an electron suppression electrode, and an energy regulation electrode to achieve controllable energy, direction, size, and flux of the extracted ions. Experiments show that the ion energy dispersion and direction dispersion using the method of this application do not exceed 10%, with an energy range of 0 keV to 5 keV. Moreover, the confinement effect of this application enables the deposition of a single atomic layer, achieving a packing density greater than 0.98 compared to bulk material deposition films.

[0049] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0050] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A dual-pulse confined ion current energy screening device, characterized in that, The dual-pulse confined ion current energy screening device includes: A plasma source is used to provide plasma. The deflection magnetic field, in conjunction with the plasma source, is used to longitudinally scan and homogenize the plasma according to the vertical electric field to obtain an ion beam. Parallel plate electrodes are used to provide a parallel electric field orthogonal to the vertical electric field, and the voltage of the parallel plate electrodes controls the focusing and deflection of the ion beam to obtain a deflected ion beam. An ion beam control electrode, vertically positioned between parallel plate electrodes, is used to adjust the energy of the deflected ion beam to obtain a single-energy ion beam. The ion beam control electrode includes an electron suppression electrode and an energy adjustment electrode, both equipped with circular holes. The electron suppression electrode and the energy adjustment electrode are connected to corresponding power supplies to adjust the ion energy. The capillary bundle, with one end connected to the circular hole of the electron suppression electrode and the other end connected to the circular hole of the energy regulation electrode, is used to extract single ions from the single-energy ion beam. A deposition target disk used to receive single ions from a single-energy ion beam.

2. The dual-pulse confined ion current energy screening device according to claim 1, characterized in that, The dual-pulse confined ion current energy screening device further includes: a parallel plate electrode power supply; The power supply for the parallel plate electrode is connected to the parallel plate electrode and is used to provide voltage to the parallel plate electrode.

3. The dual-pulse confined ion current energy screening device according to claim 1, characterized in that, The dual-pulse confined ion current energy screening device further includes: a suppression electrode power supply and a regulating electrode power supply; The power supply for the suppression electrode is connected to the electronic suppression electrode and is used to control the voltage of the electronic suppression electrode; The power supply for the regulating electrode is connected to the energy regulating electrode and is used to control the voltage of the energy regulating electrode.

4. The dual-pulse confined ion current energy screening device according to claim 1, characterized in that, The dual-pulse confined ion current energy screening device further includes: an automatic drive shaft; The automatic drive shaft is mechanically connected to the deposition target disk and is used to control the rotation of the deposition target disk.

5. The dual-pulse confined ion current energy screening device according to claim 4, characterized in that, The rotational speed of the automatic drive shaft is 1R / min to 5R / min.

6. The dual-pulse confined ion current energy screening device according to claim 1, characterized in that, The distance between the electron suppression electrode and the energy regulation electrode is 5mm to 20mm.

7. The dual-pulse confined ion current energy screening device according to claim 1, characterized in that, Both the electron suppression electrode and the energy regulation electrode are disk-shaped electrodes.

8. The dual-pulse confined ion current energy screening device according to claim 1, characterized in that, The diameter of the circular holes is 0.2mm to 2mm, and the center distance between the circular holes is 1mm to 5mm.

9. The dual-pulse confined ion current energy screening device according to claim 1, characterized in that, The capillary bundle has a length of 10mm to 100mm and a diameter of 10mm. ~100 .

10. A dual-pulse confined ion current energy screening method, implemented by the dual-pulse confined ion current energy screening device according to any one of claims 1-9, characterized in that, The dual-pulse confined ion current energy screening method includes: Acquiring plasma; A deflection magnetic field is used to longitudinally scan and homogenize the plasma to obtain an ion beam; the ion beam is an ion beam with a magnetic stiffness lower than a preset threshold. The ion beam is focused and deflected using parallel plate electrodes to obtain the deflected ion beam. The energy of the deflected ion beam is adjusted using an ion beam control electrode to obtain a single-energy ion beam. Single ions from a single-energy ion beam are extracted using a capillary bundle and then transmitted to a deposition target.

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