Photoelectric packaging structure, preparation method thereof and camera module

Abstract

The invention discloses a photoelectric packaging structure, a preparation method thereof and a camera module. The photoelectric packaging structure comprises a substrate module, a photosensitive chip and a plastic packaging module. The substrate module includes a glass substrate and a first conductive structure. The glass substrate comprises a first surface and a second surface which are opposite. The first conductive structure includes a first conductive pad exposed on the second surface. The photosensitive chip and the plastic package module are arranged on the second surface. The plastic package module comprises a plastic package body and a second conductive structure. The plastic package body comprises a third surface and a fourth surface which are opposite. The second conductive structure comprises a first conductive channel, a second conductive channel, a second conductive pad and a third conductive pad. The first conductive channel and the second conductive channel are arranged in the plastic package body. The second and third conductive pads are exposed on the fourth surface. The first conductive channel is connected with the first conductive pad and the second conductive pad, and the second conductive channel is connected with the non-photosensitive area of the photosensitive chip and the third conductive pad, so that the photosensitive chip can be electrically connected with the substrate module.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and in particular to an optoelectronic packaging structure, a method for preparing the optoelectronic packaging structure, and a camera module having the optoelectronic packaging structure. Background Technology

[0002] A camera module typically consists of a circuit board and a photosensitive chip mounted on the circuit board. The photosensitive chip is usually wire-bonded to the conductive pads of the circuit board to achieve signal connection.

[0003] However, wire bonding requires a certain amount of space between the photosensitive chip and the conductive pads on the circuit board, increasing the lateral dimensions between them. Furthermore, due to manufacturing limitations, the line width and spacing of the circuit board cannot be further reduced, hindering the miniaturization of camera modules. In addition, both the circuit board manufacturing process and wire bonding involve heat treatment, and the circuit board is prone to warping and deformation at high temperatures, reducing the quality of the camera module. Summary of the Invention

[0004] In view of this, it is necessary to provide an optoelectronic packaging structure, a method for preparing the optoelectronic packaging structure, and a camera module having the optoelectronic packaging structure.

[0005] This application provides a first aspect of an optoelectronic packaging structure, including a substrate module, a photosensitive chip, and a molding compound module. The substrate module includes a glass substrate and a first conductive structure disposed on the glass substrate. The glass substrate includes a first surface and a second surface disposed opposite to each other. The first conductive structure includes a first conductive pad. The first conductive pad is exposed on the second surface. The photosensitive chip is disposed on the second surface and includes a photosensitive area and a non-photosensitive area connected together. The molding compound module is disposed on the second surface and includes a molding compound covering the photosensitive chip and a second conductive structure disposed on the molding compound. The molding compound includes a third surface facing the second surface and a fourth surface disposed opposite to the third surface. The second conductive structure includes a first conductive channel, a second conductive channel, a second conductive pad, and a third conductive pad. The first conductive channel and the second conductive channel are respectively disposed within the molding compound, and the second conductive pad and the third conductive pad are exposed on the fourth surface. The two ends of the first conductive channel are respectively connected to the first conductive pad and the second conductive pad. The two ends of the second conductive channel are respectively connected to the non-photosensitive area and the third conductive pad. The second conductive pad is configured to be electrically connected to the third conductive pad, thereby electrically connecting the photosensitive chip to the substrate module.

[0006] A second aspect of this application provides a method for fabricating an optoelectronic packaging structure, comprising: setting a first conductive structure on a glass substrate, the glass substrate including a first surface and a second surface disposed opposite to each other, the first conductive structure including a first conductive pad exposed on the second surface; setting a photosensitive chip on the second surface, the photosensitive chip including a photosensitive area and a non-photosensitive area connected to each other; setting a molding compound on the second surface, the molding compound covering the photosensitive chip, the molding compound including a third surface facing the second surface and a fourth surface disposed opposite to the third surface; and forming a first hollow channel and a second hollow channel within the molding compound using a laser, the bottom of the first hollow channel extending to the first conductive pad and the bottom of the second hollow channel extending to the non-photosensitive area. The top of the hollow channel and the top of the second hollow channel are interconnected; conductive material is filled into the first hollow channel and cured to obtain a first conductive channel and a second conductive pad, the second conductive pad being formed at the top of the first hollow channel; conductive material is filled into the second hollow channel and cured to obtain a second conductive channel and a third conductive pad, the third conductive pad being formed at the top of the second hollow channel; the first conductive channel and the second conductive channel are respectively disposed within a plastic encapsulation body; the second conductive pad and the third conductive pad are respectively exposed on a fourth surface and electrically connected to each other; the two ends of the first conductive channel are respectively connected to the first conductive pad and the second conductive pad; the two ends of the second conductive channel are respectively connected to the non-photosensitive area and the third conductive pad, thereby electrically connecting the photosensitive chip to the substrate module.

[0007] A third aspect of this application provides a camera module, including a lens assembly. The camera module also includes the optoelectronic packaging structure as described above. The lens assembly is disposed on the side of the plastic-encapsulated module of the optoelectronic packaging structure opposite to the substrate module.

[0008] In this application, a molding compound is disposed on a substrate module having a first conductive pad. A hollow channel corresponding to the first conductive pad is formed in the molding compound, and conductive material is filled into the hollow channel to form a first conductive structure. The first conductive structure is electrically connected to the first conductive pad through the first conductive channel. Furthermore, the first conductive structure also connects to the non-photosensitive area of ​​the photosensitive chip through a second conductive channel and a third conductive pad, thereby achieving electrical connection between the photosensitive chip and the substrate module. This application eliminates the need for metal wires, thus eliminating the need to reserve operating space for wire bonding tools, which helps reduce the lateral dimensions of the optoelectronic packaging structure and facilitates its miniaturization. Moreover, compared to existing circuit board wiring processes and wire bonding packaging technologies, this application uses a glass substrate as the carrier of the optoelectronic packaging structure, and the first conductive structure can be formed by creating a hollow channel in the molding compound and filling it with conductive material, which helps reduce warpage deformation of the carrier and thus improves the quality of the optoelectronic packaging structure. Attached Figure Description

[0009] Figure 1This is a module architecture diagram of a camera module provided in one embodiment of this application.

[0010] Figure 2 for Figure 1 The diagram shows the optoelectronic packaging structure of the camera module.

[0011] Figure 3 This is a schematic diagram of the structure of a first glass substrate provided in one embodiment of this application.

[0012] Figure 4 In order to be in Figure 3 The diagram shows the structure after a seed layer is placed on the first glass substrate.

[0013] Figure 5 In order to be in Figure 4 The diagram shows the structure after a mask is placed on the first glass substrate.

[0014] Figure 6 To pass Figure 5 The diagram shows the structure after the seed layer is etched using a mask.

[0015] Figure 7 To remove Figure 6 The diagram shows the structure behind the mask.

[0016] Figure 8 In order to be in Figure 7 The diagram shows the structure after conductive material is applied to the remaining seed layer.

[0017] Figure 9 In order to be in Figure 8 The diagram shows the structure of the substrate module obtained after a protective film is applied to the first glass substrate.

[0018] Figure 10 In order to be in Figure 9 The diagram shows the structure of the substrate module after the photosensitive chip and electronic components are installed.

[0019] Figure 11 In order to be in Figure 10 The diagram shows the structure of the substrate module after the first molding block is installed.

[0020] Figure 12 In order to be in Figure 11 The diagram shows the structure after a second plastic sealant is installed on the first plastic sealant and a hollow channel is opened.

[0021] Figure 13 In order to be in Figure 12 The diagram shows the structure of the photosensitive chip after a mask has been applied.

[0022] Figure 14 In order to be in Figure 13The diagram shows the structure after conductive material is placed inside the hollow channel.

[0023] Figure 15 To remove Figure 14 The diagram shows the structure of the intermediate obtained after masking.

[0024] Figure 16 This is a schematic diagram of the structure of a glass cover plate with a mask provided in one embodiment of this application.

[0025] Figure 17 To pass Figure 16 The diagram shows the structure of the mask after conductive material is applied to the glass cover plate.

[0026] Figure 18 To remove Figure 17 The diagram shows the structure behind the mask.

[0027] Figure 19 In order to be in Figure 18 The diagram shows the structure after a mask is installed on the glass cover plate.

[0028] Figure 20 To pass Figure 19 The diagram shows the structure of the cover plate module obtained after mask etching of the glass cover plate and removal of the mask.

[0029] Figure 21 To be Figure 20 The cover plate module shown is installed at Figure 15 The diagram shows the structure after the intermediate.

[0030] Figure 22 In order to be in Figure 21 The diagram shows the structure of the substrate module after solder balls have been installed.

[0031] Figure 23 To Figure 21 The diagram shows the structure after the cover plate module has been processed and a sealing material has been placed between the cover plate module and the intermediate body.

[0032] Figure 24 In another embodiment, Figure 3 The diagram shows the structure after a protective layer is applied to the first glass substrate.

[0033] Figure 25 In order to be in Figure 24 The diagram shows the structure after a seed layer is added to the protective layer.

[0034] Figure 26 In order to be in Figure 25 The diagram shows the structure after a mask is applied to the seed layer.

[0035] Figure 27To pass Figure 26 The diagram shows the structure after the seed layer is etched using a mask.

[0036] Figure 28 To remove Figure 27 The diagram shows the structure after masking and applying conductive material to the remaining seed layer.

[0037] Figure 29 In order to be in Figure 28 The diagram shows the structure of the substrate module obtained after a protective layer is applied to the first glass substrate.

[0038] Figure 30 In order to be in Figure 29 After the substrate module shown is encapsulated and installed Figure 20 The diagram shows the structure of the optoelectronic packaging structure obtained after the cover plate module is shown.

[0039] Figure 31 A schematic diagram of a glass cover plate with a protective film provided for another embodiment.

[0040] Figure 32 To pass Figure 31 The diagram shows the structure of the protective film after etching the glass cover.

[0041] Figure 33 In order to be in Figure 32 The diagram shows the structure of the cover plate module obtained after adding conductive material to the protective film.

[0042] Figure 34 To be Figure 33 The cover plate module shown is installed at Figure 15 The diagram shows the structure of the optoelectronic packaging structure obtained after the intermediate shown.

[0043] Explanation of main component symbols

[0044] Camera Module 1

[0045] Lens Component 2

[0046] Baseboard Module 10

[0047] Glass substrate 11

[0048] First surface 11A

[0049] Second surface 11B

[0050] First conductive structure 12

[0051] Image sensor 20

[0052] Photosensitive area 21

[0053] Non-photosensitive area 22

[0054] Adhesive layer 23

[0055] Molded module 30

[0056] 31 Molded body

[0057] Third surface 31A

[0058] Fourth surface 31B

[0059] Second conductive structure 32

[0060] Electronic Components 40

[0061] Cover module 50

[0062] Glass cover plate 51

[0063] Fifth surface 51A

[0064] Surface 51B

[0065] Third line layer 52

[0066] First membrane layer 53

[0067] Second film layer 54

[0068] Optoelectronic packaging structures 100, 200, 300

[0069] First glass substrate 110

[0070] First protective film 111

[0071] Second protective film 112

[0072] First line level 120

[0073] Fourth conductive channel 121

[0074] Second solder pad 122

[0075] Connecting pad 220

[0076] First encapsulated block 311

[0077] Second encapsulation block 312

[0078] Second line layer 320

[0079] First conductive channel 321

[0080] Second conductive channel 322

[0081] Third conductive channel 323

[0082] Groove 510

[0083] Second glass substrate 511

[0084] Third protective film 512

[0085] Fifth conductive pad 520

[0086] First protective layer 1121

[0087] Second protective layer 1122

[0088] First conductive pad 1201

[0089] First end face 1201A

[0090] Second end face 1201B

[0091] Side view 1201C

[0092] First solder pad 1202

[0093] Solder ball 1220

[0094] Second conductive pad 3201

[0095] Third conductive pad 3202

[0096] Fourth conductive pad 3203

[0097] 5120 slotting

[0098] Through hole H

[0099] Seed layer S

[0100] Mask C3

[0101] First mask C1

[0102] Second mask C2

[0103] First graphical opening O1

[0104] Second graphic opening O2

[0105] First hollow passage P1

[0106] Second hollow passage P2

[0107] Third hollow passage P3

[0108] The following detailed description, in conjunction with the accompanying drawings, will further illustrate this application. Detailed Implementation

[0109] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0110] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. When a component is said to be "set on" another component, it can be directly set on the other component or there may be an intervening component.

[0111] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0112] Implementation Method 1

[0113] Please see Figure 1 This application provides a camera module 1, which includes a lens assembly 2 and an optoelectronic packaging structure 100. The lens assembly 2 has a light broadcasting path for allowing external light to pass through. The optoelectronic packaging structure 100 is used to receive external light passing through the lens assembly 2 to form an optical signal, and convert the optical signal into a corresponding electrical signal, that is, to realize photoelectric conversion.

[0114] Please see Figure 2 The optoelectronic packaging structure 100 includes a substrate module 10, a photosensitive chip 20, and a molding compound module 30. The substrate module 10 includes a glass substrate 11 and a first conductive structure 12 disposed on the glass substrate 11. The glass substrate 11 includes a first surface 11A and a second surface 11B disposed opposite to each other. The first conductive structure 12 includes a first circuit layer 120 exposed on the second surface 11B and includes a first conductive pad 1201. In some embodiments, the first conductive structure 12 includes a conductive material, which may be a conductive ink or a metal material. The conductive ink may contain at least one element selected from silver, platinum, gold, copper, nickel, and aluminum. The metal material may be silver, copper, or gold.

[0115] A photosensitive chip 20 is disposed on the second surface 11B. The photosensitive chip 20 includes a photosensitive area 21 and a non-photosensitive area 22 connected together. The photosensitive area 21 is used to receive light signals formed by external light propagating from the lens assembly 2 and convert the light signals into electrical signals. The non-photosensitive area 22 may be disposed around the photosensitive area 21. A connecting pad 220 (such as an aluminum pad) may be provided on the non-photosensitive area 22. In some embodiments, the photosensitive chip 20 may be fixed to the second surface 11B by an adhesive layer 23.

[0116] A molding compound module 30 is disposed on the second surface 11B. The molding compound module 30 includes a molding compound body 31 and a second conductive structure 32 disposed on the molding compound body 31. The molding compound body 31 at least covers the side surface of the photosensitive chip 20, with the photosensitive area 21 of the photosensitive chip 20 exposed in the molding compound body 31. The molding compound body 31 improves the stability of the photosensitive chip 20. The molding compound body 31 includes a third surface 31A facing the second surface 11B and a fourth surface 31B disposed opposite to the third surface 31A. The second conductive structure 32 includes a first conductive channel 321, a second conductive channel 322, and a second circuit layer 320. The first conductive channel 321 and the second conductive channel 322 are respectively disposed within the molding compound body 31 and can extend along the thickness direction of the molding compound body 31. The second circuit layer 320 is exposed on the fourth surface 31B. The second circuit layer 320 includes a second conductive pad 3201 and a third conductive pad 3202. Through a redistribution layer (RDL) process, the second conductive pad 3201 and the third conductive pad 3202 redistribute the connection pads 220 in the non-photosensitive area 22 to transmit electrical signals from the photosensitive chip 20 to the substrate module 10. The specific positions of the second conductive pad 3201 and the third conductive pad 3202 on the molding compound 31 can be adjusted. The two ends of the first conductive channel 321 are respectively connected to the first conductive pad 1201 and the second conductive pad 3201, and the two ends of the second conductive channel 322 are respectively connected to the connection pads 220 and the third conductive pad 3202 in the non-photosensitive area 22. The second conductive pad 3201 and the third conductive pad 3202 can be electrically connected through the circuit pattern of the second circuit layer 320 itself, thereby achieving an electrical connection between the photosensitive chip 20 and the substrate module 10. Thus, the electrical signal generated by the photosensitive chip 20 can be transmitted to the first conductive structure 12 via the second conductive channel 322, the third conductive pad 3202, the second conductive pad 3201, and the first conductive channel 321. In some embodiments, the second conductive structure 32 includes a conductive material, which can be conductive ink or a metal material. The second conductive structure 32 can be obtained by creating a hollow channel in the encapsulation 31 and filling the hollow channel with conductive material. For example, the first conductive channel 321 and the second conductive channel 322 can be completely filled with conductive material. In other embodiments, the inner walls of the first conductive channel 321 and the second conductive channel 322 are provided with a conductive layer formed by curing the conductive material to form a hollow conductive channel. In some specific embodiments, filling with conductive material can be achieved by spraying conductive ink or electroplating copper.

[0117] In some embodiments, the molding compound 31 includes a first molding block 311 and a second molding block 312. The first molding block 311 is disposed on the second surface 11B and at least adheres to the side of the photosensitive chip 20. The second molding block 312 is disposed on the first molding block 311 and covers the non-photosensitive area 22 of the photosensitive chip 20. The surface of the first molding block 311 facing away from the second molding block 312 is a third surface 31A, and the surface of the second molding block 312 facing away from the first molding block 311 is a fourth surface 31B. In this case, a first conductive channel 321 is disposed within the first molding block 311 and the second molding block 312, and a second conductive channel 322 is disposed within the second molding block 312. In some embodiments, the first molding block 311 is made of at least one of epoxy resin and phenolic resin, and the second molding block 312 is made of at least one of polyimide adhesive and build-up film. In other embodiments, the molding compound 31 may also be a one-piece structure.

[0118] In the optoelectronic packaging structure 100 of this application, a molding compound 31 is provided on a substrate module 10 having a first conductive pad 1201. A hollow channel corresponding to the first conductive pad 1201 is formed in the molding compound 31, and conductive material is filled in the hollow channel to form a first conductive structure 12. The first conductive structure 12 is electrically connected to the first conductive pad 1201 through the first conductive channel 321. Moreover, the first conductive structure 12 is also connected to the non-photosensitive area 22 of the photosensitive chip 20 through the second conductive channel 322 and the third conductive pad 3202, thereby realizing the electrical connection between the photosensitive chip 20 and the substrate module 10. This application eliminates the need for metal wires, so there is no need to reserve the working space required for wire bonding tools, which is beneficial to reducing the lateral dimension of the optoelectronic packaging structure 100, and thus facilitating the miniaturization of the optoelectronic packaging structure 100. Moreover, compared with existing circuit board wiring processes and wire bonding packaging processes, this application uses a glass substrate 11 as the carrier of the optoelectronic packaging structure 100, and the first conductive structure 12 is formed by opening a hollow channel in the molding compound 31 and filling it with conductive material, which helps to reduce the warping deformation of the carrier and thus improve the quality of the optoelectronic packaging structure 100.

[0119] In some embodiments, the first circuit layer 120 may further include a first bonding pad 1202, and the optoelectronic packaging structure 100 may further include an electronic component 40 mounted on the first bonding pad 1202, and the molding compound 31 may further encapsulate the electronic component 40. The second conductive structure 32 may further include a third conductive channel 323 disposed within the molding compound 31. The second circuit layer 320 may further include a fourth conductive pad 3203, and the fourth conductive pad 3203 is exposed on the fourth surface 31B. The two ends of the third conductive channel 323 are respectively connected to the electronic component 40 and the fourth conductive pad 3203, thereby electrically connecting the fourth conductive pad 3203 to the first conductive pad 1201. The fourth conductive pad 3203 is also configured to be electrically connected to the third conductive pad 3202. Through the redistribution layer (RDL) process, the third conductive pad 3202 and the fourth conductive pad 3203 redistribute the connection pads 220 of the non-photosensitive area 22 to sequentially transmit the electrical signals of the photosensitive chip 20 to the electronic component 40 and the substrate module 10. Thus, the electrical signals generated by the photosensitive chip 20 can also be transmitted to the first conductive structure 12 via the second conductive channel 322, the third conductive pad 3202, the fourth conductive pad 3203, and the third conductive channel 323, thereby realizing the electrical connection between the photosensitive chip 20 and the substrate module 10. The electronic component 40 can be a passive component or an active component. Passive components include resistors, capacitors, etc., while active components include transistors, integrated circuits, or image tubes, etc.

[0120] The first conductive structure 12 may further include a fourth conductive channel 121 and a second solder pad 122. The fourth conductive channel 121 is disposed within the glass substrate 11, and the second solder pad 122 is exposed on the first surface 11A. One end of the fourth conductive channel 121 is selectively connected to either the first conductive pad 1201 or the first solder pad 1202, and the other end of the fourth conductive channel 121 is connected to the second solder pad 122. Solder balls 1220 may be disposed on the second solder pad 122, and other components (such as circuit boards or chips) may be disposed on the solder balls 1220, so that the electrical signals transmitted to the photosensitive chip 20 of the first conductive structure 12 can be further conducted to other components via the solder balls 1220. The solder balls 1220 may be made of solder balls. The first conductive structure 12 can be obtained by creating a hollow channel in the molding compound 31 and filling the hollow channel with conductive material. For example, the fourth conductive channel 121 may be completely filled with conductive material. In other embodiments, the inner wall of the fourth conductive channel 121 is provided with a conductive layer formed by curing the conductive material to form a hollow conductive channel. In some specific embodiments, the conductive material can be filled by spraying conductive ink.

[0121] Further, the glass substrate 11 may include a first glass substrate 110, a first protective film 111, and a second protective film 112, with the first glass substrate 110 located between the first protective film 111 and the second protective film 112. The first glass substrate 110 serves as a carrier for the fourth conductive channel 121, which is disposed within the first glass substrate 110. The first protective film 111 and the second protective film 112 provide insulating protection for the first glass substrate 110. The first protective film 111 covers the side of the first solder pad 1202, and the second protective film 112 covers the side of the first conductive pad 1201. The surface of the first protective film 111 facing away from the first glass substrate 110 is designated as the first surface 11A, and the surface of the second protective film 112 facing away from the first glass substrate 110 is designated as the second surface 11B. In some embodiments, the first protective film 111 and the second protective film 112 may be made of polyimide or build-up film.

[0122] In some embodiments, the optoelectronic packaging structure 100 further includes a cover plate module 50. The cover plate module 50 is disposed on the fourth surface 31B and covers the photosensitive chip 20. The cover plate module 50 includes a glass cover plate 51 and a third circuit layer 52 disposed on the glass cover plate 51. The glass cover plate 51 includes a fifth surface 51A facing the fourth surface 31B and a sixth surface 51B disposed opposite to the fifth surface 51A. The third circuit layer 52 is exposed on the fifth surface 51A and includes a fifth conductive pad 520. The fifth conductive pad 520 can selectively connect to a second conductive pad 3201 or a third conductive pad 3202, thereby electrically connecting the photosensitive chip 20 to the substrate module 10. The cover plate module 50 is used to protect the photosensitive area 21 of the photosensitive chip 20, reducing the risk of damage to the photosensitive area 21 due to external forces. The lens assembly 2 can be mounted on the cover plate module 50. The relatively flat surface of the cover plate module 50 facilitates the mounting of the lens assembly 2 on its surface. Furthermore, the cover plate module 50 can also serve as a carrier for part of the circuit layer, increasing the freedom of rewiring. In some embodiments, the third circuit layer 52 includes a conductive material, which can be conductive ink or a metal material. The third circuit layer 52 can be obtained by creating a circuit pattern in the molding compound 31 and filling the circuit pattern with conductive material. In some specific embodiments, filling with conductive material can be achieved by spraying conductive ink or electroplating copper.

[0123] Furthermore, the fifth surface 51A of the glass cover plate 51 is provided with a groove 510, which, when viewed from the thickness direction of the glass cover plate 51, at least partially overlaps with the photosensitive area 21. In this case, the glass cover plate 51 not only protects the photosensitive area 21 of the photosensitive chip 20, but also, by providing the groove 510 on the fifth surface 51A, thins a portion of the glass cover plate 51 to form a filter. The filter can absorb and filter out certain wavelengths of light while allowing other wavelengths of light to pass through. In some embodiments, the cover plate module 50 may further include at least one of a first film layer 53 and a second film layer 54. The first film layer 53 is disposed on the bottom surface of the groove 510, and the second film layer 54 is disposed on the sixth surface 51B. When viewed from the thickness direction, the first film layer 53 at least partially overlaps with the photosensitive area 21, and the second film layer 54 at least partially overlaps with the photosensitive area 21. In this configuration, the thinned glass cover plate 51, the first film layer 53, and the second film layer 54 together constitute the optical filter, with the first film layer 53 and the second film layer 54 respectively disposed on opposite surfaces of the thinned glass cover plate 51. The materials of the first film layer 53 and the second film layer 54 are related to the function of the optical filter. For example, when the optical filter is an infrared cutoff filter that filters out infrared radiation, the materials of the first film layer 53 and the second film layer 54 can be indium tin oxide (ITO), silicon nitride (Si3N4), or titanium dioxide (TiO2).

[0124] In some embodiments, the optoelectronic packaging structure 100 further includes a sealing material 60 disposed between the fourth surface 31B and the fifth surface 51A. The sealing material 60 is disposed around the second conductive pad 3201, the third conductive pad 3202, and the fifth conductive pad 520. The sealing material 60 can bond the cover plate module 50 and the molding film together to form a sealed cavity, thereby isolating external moisture or impurities and sealing and protecting the photosensitive area 21. In some embodiments, the sealing material 60 may be made of sealant.

[0125] This application also provides a method for preparing an optoelectronic packaging structure 100, comprising the following steps:

[0126] Step S1, please refer to Figures 3 to 9 A first conductive structure 12 is formed on a glass substrate 11 to obtain a substrate module 10. The glass substrate 11 includes a first surface 11A and a second surface 11B disposed opposite to each other. The first conductive structure 12 includes a first circuit layer 120, which is exposed on the second surface 11B and includes a first conductive pad 1201.

[0127] In some embodiments, the first conductive structure 12 further includes a fourth conductive channel 121 and a second bonding pad 122. The fourth conductive channel 121 is disposed within the glass substrate 11, and the second bonding pad 122 is exposed on the first surface 11A. The two ends of the fourth conductive channel 121 are respectively connected to the first conductive pad 1201 and the second bonding pad 122.

[0128] The substrate module 10 can be obtained by the following method: First, multiple through holes H (such as...) are formed in the first glass substrate 110. Figure 3 As shown), each through-hole H penetrates both opposite surfaces of the first glass substrate 110, and then a seed layer S (as shown) is electroplated on the surface of the first glass substrate 110. Figure 4 As shown), a seed layer S is also formed on the inner wall of the through-hole H, and a third mask C3 (as shown) covers the seed layer S. Figure 5 As shown), the third mask C3 shields the via H and the areas of the two opposing surfaces of the first glass substrate 110 adjacent to the via H, and then the seed layer S exposed on the third mask C3 (as shown) is etched. Figure 6 As shown), and remove the third mask C3 (as shown). Figure 7 As shown), the remaining seed layer S is located on the inner wall of the through hole H and in the areas adjacent to the through hole H on the two opposite surfaces of the first glass substrate 110. A conductive material is then placed on the seed layer S and cured. The seed layer S and the conductive material located within the through hole H together form the fourth conductive channel 121. The seed layer S and the conductive material located on the surface of the first glass substrate 110 together form the first circuit layer 120 or the second pad 122 (as shown). Figure 8 (As shown). The conductive material used to form the first conductive structure 12 can be formed by conductive ink or by sequential electroplating. For example, the fourth conductive channel 121 can be completely filled with conductive material. In other embodiments, the inner wall of the fourth conductive channel 121 is provided with a conductive layer formed by curing the conductive material, thereby forming a hollow conductive channel.

[0129] Subsequently, such as Figure 9 As shown, a first protective film 111 and a second protective film 112 can also be provided on opposite surfaces of the first glass substrate 110, such that the first protective film 111 covers the side of the first solder pad 1202 and the second protective film 112 covers the side of the first conductive pad 1201. The first protective film 111 and the second protective film 112 are used to provide insulating protection for the first glass substrate 110. At this time, the first glass substrate 110, the first protective film 111 and the second protective film 112 together constitute the glass substrate 11. The surface of the first protective film 111 facing away from the first glass substrate 110 is the first surface 11A, and the surface of the second protective film 112 facing away from the first glass substrate 110 is the second surface 11B.

[0130] For step S2, please refer to [link / reference]. Figure 10A photosensitive chip 20 is disposed on the second surface 11B. The photosensitive chip 20 includes a photosensitive area 21 and a non-photosensitive area 22 connected to each other.

[0131] In some embodiments, the photosensitive chip 20 can be fixed to the second surface 11B by the adhesive layer 23.

[0132] In some embodiments, when the first circuit layer 120 further includes a first solder pad 1202, after the photosensitive chip 20 is disposed, an electronic component 40 may also be mounted on the first solder pad 1202. The electronic component 40 may be fixed to the first solder pad 1202 by soldering. The electronic component 40 may be a passive component or an active component. Passive components include resistors, capacitors, etc., while active components include transistors, integrated circuits, or image tubes, etc.

[0133] Step S3, please refer to Figure 11 and Figure 12 A molding compound 31 is disposed on the second surface 11B, and the molding compound 31 covers the photosensitive chip 20.

[0134] When electronic component 40 is mounted on the first solder pad 1202, the encapsulation body 31 also covers electronic component 40.

[0135] In some embodiments, the molding compound 31 can be obtained by firstly setting a first molding block 311 on the second surface 11B (e.g., ...). Figure 11 As shown), the first molding compound 311 is at least attached to the side of the photosensitive chip 20, and then a second molding compound 312 is disposed on the first molding compound 311 (as shown). Figure 12 As shown, the second molding compound 312 also covers the non-photosensitive area 22, and the first molding compound 311 and the second molding compound 312 together constitute the molding compound 31. The surface of the first molding compound 311 facing away from the second molding compound 312 is the third surface 31A, and the surface of the second molding compound 312 facing away from the first molding compound 311 is the fourth surface 31B. More specifically, the molding compound 31 can be formed by a molding process.

[0136] For step S4, please refer to [link / reference]. Figure 12 A first hollow channel P1 and a second hollow channel P2 are created within the encapsulated body 31 using a laser.

[0137] The first hollow channel P1 is disposed within the first encapsulation block 311 and the second encapsulation block 312, and the second hollow channel P2 is disposed within the second encapsulation block 312. The bottom of the first hollow channel P1 extends to the first conductive pad 1201, and the top of the first hollow channel P1 may be located on the second encapsulation block 312. The bottom of the second hollow channel P2 extends to the non-photosensitive area 22, and the top of the second hollow channel P2 is located on the second encapsulation block 312. The tops of the multiple first hollow channels P1 and the multiple second hollow channels P2 can be interconnected, and the tops of at least the multiple first hollow channels P1 and the multiple second hollow channels P2 together form a circuit pattern.

[0138] When the electronic component 40 is mounted on the first solder pad 1202, a third hollow channel P3 can also be created within the molding compound 31 using a laser. The bottom of the third hollow channel P3 extends to the electronic component 40, and the top of the third hollow channel P3 can be located at the second molding compound 312. The tops of the multiple first hollow channels P1, the multiple second hollow channels P2, and the multiple third hollow channels P3 can be interconnected to jointly form the aforementioned circuit pattern.

[0139] For step S5, please refer to [link / reference]. Figures 13 to 15 Conductive materials are filled into the first hollow channel P1 and the second hollow channel P2 respectively and then cured to obtain the second conductive structure 32.

[0140] The second conductive structure 32 includes a first conductive channel 321, a second conductive channel 322, a second conductive pad 3201, and a third conductive pad 3202. The second conductive pad 3201 is formed on the top of the first hollow channel P1, and the third conductive pad 3202 is formed on the top of the second hollow channel P2. The first conductive channel 321 and the second conductive channel 322 are respectively disposed within the encapsulation body 31. The second conductive pad 3201 and the third conductive pad 3202 are exposed on the fourth surface 31B and are electrically connected to each other. The two ends of the first conductive channel 321 are respectively connected to the first conductive pad 1201 and the second conductive pad 3201. The two ends of the second conductive channel 322 are respectively connected to the non-photosensitive area 22 and the third conductive pad 3202. Therefore, the photosensitive chip 20 and the substrate module 10 can be electrically connected.

[0141] When the encapsulation body 31 also has a third hollow channel P3, conductive material can be filled into the third hollow channel P3 and cured to obtain a third conductive channel 323 and a fourth conductive pad 3203, with the fourth conductive pad 3203 formed on the top of the third hollow channel P3. The third conductive channel 323 is disposed within the encapsulation body 31. The fourth conductive pad 3203 is exposed on the fourth surface 31B and electrically connected to the third conductive pad 3202. The two ends of the third conductive channel 323 are respectively connected to the electronic component 40 and the fourth conductive pad 3203, so that the photosensitive chip 20 is electrically connected to the electronic component 40. The conductive material used to form the second conductive structure 32 can be formed by conductive ink or by sequential electroplating. For example, the first conductive channel 321, the second conductive channel 322, and the third conductive channel 323 can be completely filled with conductive material. In other embodiments, the inner walls of the first conductive channel 321, the second conductive channel 322, and the third conductive channel 323 are provided with a conductive layer formed by curing the conductive material to form a hollow conductive channel.

[0142] In some embodiments, before filling with conductive material, a fourth mask C4 (such as...) can be first applied to the photosensitive area 21. Figure 13 (as shown), and then conductive materials (such as...) are filled into the first hollow channel P1 and the second hollow channel P2 respectively. Figure 14 (as shown), thereby reducing the risk of the conductive material contaminating the photosensitive area 21. After curing the conductive material, the fourth mask C4 (as shown) is then removed. Figure 15 (As shown).

[0143] Step S6, please refer to Figures 16 to 20 A cover plate module 50 is provided. The cover plate module 50 includes a glass cover plate 51 and a third circuit layer 52 disposed on the glass cover plate 51. The glass cover plate 51 includes a fifth surface 51A and a sixth surface 51B disposed opposite to the fifth surface 51A. The third circuit layer 52 is exposed on the fifth surface 51A and includes a fifth conductive pad 520.

[0144] In some embodiments, the cover plate module 50 can be obtained by first covering the fifth surface 51A of the glass cover plate 51 with a first mask C1 (e.g., ...). Figure 16 As shown), the first mask C1 has a first patterned opening O1, and then a conductive material is filled into the first patterned opening O1 and cured to obtain the third circuit layer 52 (as shown). Figure 17 As shown), then remove the first mask C1 (as shown). Figure 18 (As shown).

[0145] After removing the first mask C1, a second mask C2 can be applied to the third circuit layer 52 (e.g., ...). Figure 19As shown), the second mask C2 has a slot that exposes a portion of the fifth surface 51A, and then a groove 510 is formed at the exposed fifth surface 51A (as shown). Figure 20 (As shown). After creating the groove 510, a first film layer 53 may be provided on the bottom surface of the groove 510. In some embodiments, a second film layer 54 may also be provided on the sixth surface 51B.

[0146] For step S7, please refer to [link / reference]. Figure 21 A cover plate module 50 is disposed on the fourth surface 31B, such that the fifth surface 51A of the glass cover plate 51 faces the fourth surface 31B, and the fifth conductive pad 520 can selectively connect to the second conductive pad 3201 or the third conductive pad 3202. The fifth conductive pad 520 allows the second conductive pad 3201 and the third conductive pad 3202 to be connected, thereby enabling the photosensitive chip 20 to be electrically connected to the substrate module 10.

[0147] When the second conductive structure 32 further includes a fourth conductive pad 3203, the fifth conductive pad 520 can also be selectively connected to the fourth conductive pad 3203. The fifth conductive pad 520 can be soldered to the second conductive pad 3201, the third conductive pad 3202, or the fourth conductive pad 3203.

[0148] In some embodiments, such as Figure 22 As shown, solder balls 1220 can be further provided on the second solder pad 122.

[0149] Step S8, please refer to Figure 23 and Figure 2 A sealing material 60 is disposed between the fourth surface 31B and the fifth surface 51A, and the sealing material 60 surrounds the second conductive pad 3201, the third conductive pad 3202, and the fifth conductive pad 520. At this time, the optoelectronic packaging structure 100 is obtained.

[0150] In some embodiments, the edge region of the cover module 50 may be removed first, and then a sealing material 60 (such as...) may be applied between the fourth surface 31B and the fifth surface 51A. Figure 23 (As shown), then remove the edge areas of the substrate module 10 and the molding module 30 to obtain... Figure 2 The optoelectronic packaging structure 100 shown is illustrated.

[0151] Implementation Method 2

[0152] Please see Figure 30This application also provides an optoelectronic packaging structure 200. The difference between this and the optoelectronic packaging structure 100 lies in the structure of the substrate module 10. Specifically, the first conductive pad 1201 of the substrate module 10 includes a first end face 1201A facing the first glass substrate 110, a second end face 1201B opposite to the first end face 1201A, and a side face 1201C connecting the first end face 1201A and the second end face 1201B respectively. A second protective film 112 covers and adheres to the first end face 1201A, the second end face 1201B, and the side face 1201C. At this time, the first conductive channel 321 also passes through the second protective film 112 on the second end face 1201B to connect with the first conductive pad 1201.

[0153] This application also provides a method for preparing an optoelectronic packaging structure 100, which differs from the preparation method in Embodiment 1 in the preparation steps of the substrate module 10.

[0154] In this embodiment, the substrate module 10 can be obtained by the following method: First, a through hole H is formed in the first glass substrate 110, and then a first protective film 111 and a first protective layer 1121 (e.g., ...) are respectively formed on the two opposite surfaces of the first glass substrate 110. Figure 24 As shown), the first protective layer 1121 has a second patterned opening O2 that connects to the through hole H, and a seed layer S is then formed on the surface of the first glass substrate 110. The seed layer S is also formed in the inner wall of the through hole H and the second patterned opening O2 (as shown). Figure 25 As shown), a third mask C3 is placed over the seed layer S (as shown). Figure 26 As shown), the third mask C3 masks the second patterned opening O2, and then the seed layer S exposed on the third mask C3 (as shown) is etched. Figure 27 (As shown), the third mask C3 is removed, leaving the remaining seed layer S located on the inner wall of the via H and within the second patterned opening O2. Finally, conductive material is applied to the seed layer S and cured. The seed layer S within the via H and the conductive material together form the fourth conductive channel 121. The seed layer S within the second patterned opening O2 and the conductive material together form the first circuit layer 120 or the second pad 122 (as shown). Figure 28 (As shown). Therefore, in this embodiment, by first setting the first protective layer 1121, it is convenient to form the first circuit layer 120 on the first glass substrate 110, and the first protective layer 1121 can provide insulation protection for the first glass substrate 110. The first protective layer 1121 does not need to be removed later, which reduces the process cost.

[0155] Subsequently, such as Figure 29As shown, a second protective layer 1122 can also be provided on the first protective layer 1121. In this case, the first protective layer 1121 and the second protective layer 1122 together constitute the second protective film 112. The second protective film 112 covers and adheres to the first end face 1201A, the second end face 1201B, and the side face 1201C of the first conductive pad 1201. The second protective film 112 also covers and adheres to the two end faces and the side face of the first solder pad 1202. To facilitate the mounting of electronic components 40 on the first solder pad 1202, the second protective film 112 can be perforated so that one end face of the first solder pad 1202 is exposed in the second protective film 112.

[0156] At this point, the first glass substrate 110, the first protective film 111, and the second protective film 112 together constitute the glass substrate 11. The surface of the first protective film 111 facing away from the first glass substrate 110 is the first surface 11A, and the surface of the second protective film 112 facing away from the first glass substrate 110 is the second surface 11B. (Refer to reference...) Figure 29 At this time, the first conductive channel 321 also extends through part of the second protective film 112 to connect the second end face 1201B of the first conductive pad 1201.

[0157] Implementation Method 3

[0158] Please see Figure 34 This application also provides an optoelectronic packaging structure 300. The difference from the optoelectronic packaging structure 100 described above lies in the structure of the cover module 50. Specifically, the glass cover 51 of the cover module 50 includes a second glass substrate 511 and a third protective film 512 disposed on the second glass substrate 511. A third circuit layer 52 is disposed on the second glass substrate 511 and exposed on the third protective film 512. The surface of the third protective film 512 facing away from the second glass substrate 511 is a fifth surface 51A, and the surface of the second glass substrate 511 facing away from the third protective film 512 is a sixth surface 51B.

[0159] This application also provides a method for preparing an optoelectronic packaging structure 300, which differs from the preparation method in Embodiment 1 in the preparation steps of the cover module 50.

[0160] In this embodiment, the cover plate module 50 can be obtained by first covering the second glass substrate 511 with a third protective film 512 (e.g., ...). Figure 31 As shown), the third protective film 512 has a second patterned opening O2 and a groove 5120. The second glass substrate 511 and the third protective film 512 together constitute the glass cover plate 51. Then, the second glass substrate 511 is etched by the groove 5120 to form a groove 510 on the second glass substrate 511 (as shown). Figure 32As shown), the second patterned opening O2 is then filled with conductive material and cured to obtain the third circuit layer 52 (as shown). Figure 33 (As shown). Therefore, in this embodiment, by providing a third protective film 512, it is convenient to form a third circuit layer 52 on the second glass substrate 511, and the third protective film 512 can provide insulation protection for the second glass substrate 511. The third protective film 512 does not need to be removed later, which reduces the process cost.

[0161] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to the embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this application without departing from the spirit and scope of the technical solutions of this application.

Claims

1. A photoelectric packaging structure, characterized in that, include: A substrate module includes a glass substrate and a first conductive structure disposed on the glass substrate. The glass substrate includes a first surface and a second surface disposed opposite to each other. The first conductive structure includes a first conductive pad, and the first conductive pad is exposed on the second surface. A photosensitive chip is disposed on the second surface, the photosensitive chip including a photosensitive area and a non-photosensitive area connected together; as well as A molding module is disposed on the second surface. The molding module includes a molding body covering the photosensitive chip and a second conductive structure disposed on the molding body. The molding body includes a third surface facing the second surface and a fourth surface disposed opposite to the third surface. The second conductive structure includes a first conductive channel, a second conductive channel, a second conductive pad, and a third conductive pad. The first conductive channel and the second conductive channel are respectively disposed within the molding body, and the second conductive pad and the third conductive pad are exposed on the fourth surface. The two ends of the first conductive channel are respectively connected to the first conductive pad and the second conductive pad, and the two ends of the second conductive channel are respectively connected to the non-photosensitive area and the third conductive pad. The second conductive pad is configured to be electrically connected to the third conductive pad, thereby electrically connecting the photosensitive chip to the substrate module.

2. The optoelectronic packaging structure as described in claim 1, characterized in that, The first conductive structure further includes a first solder pad, and the optoelectronic packaging structure further includes an electronic component mounted on the first solder pad, and the molding compound further covers the electronic component; the second conductive structure further includes a third conductive channel and a fourth conductive pad, the third conductive channel is disposed within the molding compound, the fourth conductive pad is exposed on the fourth surface, the two ends of the third conductive channel are respectively connected to the electronic component and the fourth conductive pad, thereby electrically connecting the fourth conductive pad to the first solder pad; the fourth conductive pad is also configured to be electrically connected to the third conductive pad, thereby electrically connecting the photosensitive chip to the electronic component.

3. The optoelectronic packaging structure as described in claim 1, characterized in that, Also includes: A cover plate module is disposed on the fourth surface. The cover plate module includes a glass cover plate and a fifth conductive pad disposed on the glass cover plate. The glass cover plate includes a fifth surface facing the fourth surface and a sixth surface disposed opposite to the fifth surface. The fifth conductive pad is exposed on the fifth surface and can be selectively connected to the second conductive pad or the third conductive pad.

4. The optoelectronic packaging structure as described in claim 3, characterized in that, The fifth surface is provided with a groove, which at least partially overlaps with the photosensitive area.

5. The optoelectronic packaging structure as described in claim 4, characterized in that, The cover plate module further includes a first film layer and a second film layer, the first film layer being disposed on the bottom surface of the groove and the second film layer being disposed on the sixth surface; the first film layer at least partially overlaps with the photosensitive area and the second film layer at least partially overlaps with the photosensitive area.

6. The optoelectronic packaging structure as described in claim 3, characterized in that, Also includes: A sealing material is disposed between the fourth surface and the fifth surface, the sealing material being disposed around the second conductive pad, the third conductive pad, and the fifth conductive pad.

7. The optoelectronic packaging structure as described in claim 1, characterized in that, The molding compound includes a first molding block and a second molding block. The first molding block is disposed on the second surface and is at least attached to the side of the photosensitive chip. The second molding block is disposed on the first molding block and covers the non-photosensitive area. The surface of the first molding block facing away from the second molding block is the third surface, and the surface of the second molding block facing away from the first molding block is the fourth surface. The first conductive channel is disposed within the first molding block and the second molding block, and the second conductive channel is disposed within the second molding block.

8. The optoelectronic packaging structure as described in claim 1, characterized in that, The first conductive structure further includes a fourth conductive channel and a second solder pad. The fourth conductive channel is disposed within the glass substrate, and the second solder pad is exposed on the first surface. The two ends of the fourth conductive channel are respectively connected to the first conductive pad and the second solder pad, and the second solder pad is provided with solder balls.

9. The optoelectronic packaging structure as described in claim 8, characterized in that, The glass substrate includes a first glass substrate, a first protective film, and a second protective film. The first glass substrate is located between the first protective film and the second protective film. The fourth conductive channel is disposed in the first glass substrate. The surface of the first protective film facing away from the first glass substrate is the first surface, and the surface of the second protective film facing away from the first glass substrate is the second surface.

10. The optoelectronic packaging structure as described in claim 1, characterized in that, The inner walls of the first conductive channel and the second conductive channel are provided with conductive layers to form hollow conductive channels.

11. A method for fabricating an optoelectronic packaging structure, characterized in that, include: A first conductive structure is disposed on a glass substrate, the glass substrate including a first surface and a second surface disposed opposite to each other, the first conductive structure including a first conductive pad, the first conductive pad being exposed on the second surface; A photosensitive chip is disposed on the second surface, the photosensitive chip including a photosensitive area and a non-photosensitive area connected together; A molding compound is disposed on the second surface, the molding compound covering the photosensitive chip, the molding compound including a third surface facing the second surface and a fourth surface disposed opposite to the third surface; A first hollow channel and a second hollow channel are created within the encapsulation using a laser. The bottom of the first hollow channel extends to the first conductive pad, and the bottom of the second hollow channel extends to the non-photosensitive area. The tops of the first hollow channel and the tops of the second hollow channel are interconnected. A conductive material is filled into the first hollow channel and cured to obtain a first conductive channel and a second conductive pad, wherein the second conductive pad is formed on the top of the first hollow channel; as well as A conductive material is filled into the second hollow channel and cured to obtain a second conductive channel and a third conductive pad. The third conductive pad is formed on the top of the second hollow channel. The first conductive channel and the second conductive channel are respectively disposed in the encapsulation body. The second conductive pad and the third conductive pad are exposed on the fourth surface and are electrically connected to each other. The two ends of the first conductive channel are respectively connected to the first conductive pad and the second conductive pad. The two ends of the second conductive channel are respectively connected to the non-photosensitive area and the third conductive pad, thereby electrically connecting the photosensitive chip to the substrate module.

12. The method for preparing the optoelectronic packaging structure as described in claim 11, characterized in that, The first conductive structure further includes a first solder pad, and the preparation method further includes, before the encapsulant is disposed on the second surface: Install electronic components on the first solder pad; After the encapsulation is disposed on the second surface, the encapsulation further covers the electronic component, and the preparation method further includes: A third hollow channel is created within the encapsulation using a laser. The bottom of the third hollow channel extends to the electronic component, and the top of the third hollow channel communicates with the top of the second hollow channel. The third hollow channel is filled with conductive material and cured to obtain a third conductive channel and a fourth conductive pad. The fourth conductive pad is formed at the top of the third hollow channel. The third conductive channel is disposed within the encapsulation body. The fourth conductive pad is exposed on the fourth surface and electrically connected to the third conductive pad. The two ends of the third conductive channel are respectively connected to the electronic component and the fourth conductive pad, thereby electrically connecting the photosensitive chip to the electronic component.

13. The method for preparing the optoelectronic packaging structure as described in claim 11, characterized in that, After filling with the conductive material, the preparation method further includes: A cover plate module is provided on the fourth surface. The cover plate module includes a glass cover plate and a fifth conductive pad disposed on the glass cover plate. The glass cover plate includes a fifth surface facing the fourth surface and a sixth surface disposed opposite to the fifth surface. The fifth conductive pad is exposed on the fifth surface and can be selectively connected to the second conductive pad or the third conductive pad.

14. The method for preparing the optoelectronic packaging structure as described in claim 13, characterized in that, The preparation of the cover plate module includes: A first mask is covered on the fifth surface, the first mask having a first patterned opening; The first patterned opening is filled with conductive material and cured to obtain the fifth conductive pad; and Remove the first mask.

15. The method for preparing the optoelectronic packaging structure as described in claim 14, characterized in that, After removing the first mask, the preparation method further includes: A second mask is covered on the fifth conductive pad, the second mask having a slot that exposes a portion of the fifth surface; A groove is formed at the exposed fifth surface, the groove at least partially overlapping the photosensitive area; and Remove the second mask.

16. The method for preparing the optoelectronic packaging structure as described in claim 13, characterized in that, The preparation of the cover plate module includes: A third protective film is applied to a second glass substrate, the third protective film having a second patterned opening, the second glass substrate and the third protective film together constituting the glass cover plate; and The conductive material is filled into the second patterned opening and cured to obtain the fifth conductive pad.

17. The method for preparing the optoelectronic packaging structure according to claim 13, characterized in that, After the cover plate module is disposed on the third surface, the preparation method further includes: A sealing material is disposed between the fourth surface and the fifth surface, the sealing material being disposed around the second conductive pad, the third conductive pad, and the fifth conductive pad.

18. The method for preparing the optoelectronic packaging structure as described in claim 11, characterized in that, Depositing the encapsulation on the second surface includes: A first molding block is disposed on the second surface, the first molding block being at least attached to the side of the photosensitive chip; A second molding block is disposed on the first molding block, and the second molding block also covers the non-photosensitive area. The first molding block and the second molding block together constitute the molding body. The surface of the first molding block facing away from the second molding block is the third surface, and the surface of the second molding block facing away from the first molding block is the fourth surface. The first hollow channel is disposed within the first molding block and the second molding block, and the second hollow channel is disposed within the second molding block.

19. The method for preparing the optoelectronic packaging structure as described in claim 11, characterized in that, The first conductive structure is disposed on the glass substrate including: A through-hole is formed in the first glass substrate; A seed layer is provided on the inner wall of the through hole, and the seed layer extends to the regions of the opposite surfaces of the first glass substrate adjacent to the through hole; and A conductive material is disposed on the seed layer and cured. The seed layer and the conductive material located in the through hole together form a fourth conductive channel. The seed layer and the conductive material located on the surface of the first glass substrate together form the first conductive pad.

20. The method for preparing the optoelectronic packaging structure as described in claim 19, characterized in that, After depositing the conductive material on the seed layer, the preparation method further includes: A first protective film and a second protective film are respectively disposed on two opposite surfaces of the first glass substrate, so that the first conductive pad is exposed on the second protective film. The first glass substrate, the first protective film and the second protective film together constitute the glass substrate. The surface of the first protective film facing away from the first glass substrate is the first surface, and the surface of the second protective film facing away from the first glass substrate is the second surface.

21. The method for preparing the optoelectronic packaging structure as described in claim 11, characterized in that, The first conductive structure is disposed on the glass substrate including: A through-hole is formed in the first glass substrate; A first protective film and a first protective layer are respectively provided on two opposite surfaces of the first glass substrate, and the first protective layer has a second patterned opening that connects to the through hole; A seed layer is provided on the inner wall of the through hole, and the seed layer further extends into the second patterned opening; and A conductive material is disposed on the seed layer and cured. The seed layer and the conductive material located in the through hole together form a fourth conductive channel, and the seed layer and the conductive material located in the second patterned opening together form the first conductive pad.

22. The method for preparing the optoelectronic packaging structure as described in claim 21, characterized in that, After depositing the conductive material on the seed layer, the preparation method further includes: A second protective layer is disposed on the first protective layer. The first protective layer and the second protective layer together constitute a second protective film, so that the first conductive pad is exposed on the second protective film. The first glass substrate, the first protective film and the second protective film together constitute the glass substrate. The surface of the first protective film facing away from the first glass substrate is the first surface, and the surface of the second protective film facing away from the first glass substrate is the second surface. When the first hollow channel is created within the encapsulation using a laser, the first hollow channel also penetrates a portion of the second protective layer.

23. A camera module, comprising a lens assembly, characterized in that, The camera module further includes an optoelectronic packaging structure as described in any one of claims 1 to 10, wherein the lens assembly is disposed on the side of the plastic encapsulation module of the optoelectronic packaging structure opposite to the substrate module.

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