Vertical power delivery module including cross-inductor voltage regulator

Abstract

The present disclosure is directed to a vertical power delivery module including a cross-inductor voltage regulator. A power module (110) includes a substrate (320) having first and second surfaces and first, second, and third metal interconnects. A semiconductor die (310) on the first surface is coupled to the first metal interconnect. The encapsulation material (338) has a third surface and an opposing fourth surface. The third surface is on the second surface. A primary inductor (Lp) in the encapsulation material has a first lateral segment (362), a first vertical segment (361) extending between a first end of the first lateral segment and the third surface, and a second vertical segment (363) extending from a second end of the first lateral segment to the fourth surface. The secondary inductor (Ls) has a second transverse segment (372) and third and fourth vertical segments (371, 372) extending from an end of the second transverse segment to the third surface. A pair of adjacent third vertical segments are coupled via a second metal interconnect. A pair of adjacent fourth vertical segments are coupled via a third metal interconnect.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Provisional Application No. 63 / 686,357, filed August 23, 2024, entitled “Vertical Transinductor Voltage Regulators (TLVRs)”, which is hereby incorporated herein by reference. Technical Field

[0003] This disclosure pertains to semiconductor devices. Background Technology

[0004] A multiphase power converter comprises multiple output power phases coupled in parallel. Each power phase may contain a pair of transistors coupled to an inductor (e.g., a half-bridge). A controller controls the timing of the transistors within the power phase. A transinductor voltage regulator (TLVR) is a multiphase power converter that comprises a set of "secondary" inductors connected in series. Each secondary inductor is magnetically coupled to the corresponding "primary" inductor of the power phase of the regulator. Through the magnetic coupling between the primary and secondary inductors, the current through the primary inductor of the power phase is adjusted (increased or decreased) more rapidly, thus providing a faster transient response compared to the absence of a secondary inductor. Summary of the Invention

[0005] In one example, a power module includes a substrate having a first surface and an opposing second surface, as well as a first metal interconnect, a second metal interconnect, and a third metal interconnect. A semiconductor die on the first surface is coupled to the first metal interconnect. An encapsulation material has a third surface and an opposing fourth surface. The third surface is on the second surface. A primary inductor in the encapsulation material has a first lateral segment, a first vertical segment extending between a first end of the first lateral segment and the third surface, and a second vertical segment extending from a second end of the first lateral segment to the fourth surface. A secondary inductor in the encapsulation material has a second lateral segment and third and fourth vertical segments extending from corresponding ends of the second lateral segment to the third surface, wherein a pair of adjacent third vertical segments are coupled via the second metal interconnect, and a pair of adjacent fourth vertical segments are coupled via the third metal interconnect.

[0006] In another example, a system includes: a circuit board having a first surface and an opposing second surface; and a first integrated circuit on the first surface. A transinductor voltage regulator (TLVR) module is on the second surface and coupled to the first integrated circuit via the circuit board. The TLVR module includes a substrate having a third surface and an opposing fourth surface, and first, second, and third metal interconnects. A semiconductor die is on the third surface and coupled to the first metal interconnects. An encapsulation material has a fifth surface and an opposing sixth surface. The sixth surface is on the fourth surface. Primary inductors are contained in the encapsulation material. Each primary inductor has a first lateral segment, a first vertical segment extending between a first end of the first lateral segment and the first surface, and a second vertical segment extending from a second end of the first lateral segment to the sixth surface. Secondary inductors are contained in the encapsulation material. Each secondary inductor has a second lateral segment and third and fourth vertical segments extending from corresponding ends of the second lateral segment to the fifth surface. Each pair of adjacent third vertical segments is coupled via the second metal interconnect, and a pair of adjacent fourth vertical segments is coupled via the third metal interconnect. Attached Figure Description

[0007] Figure 1 The diagram illustrates a system in one example that includes a vertical power delivery (VPD) module, which includes a transinductor voltage regulator (TLVR).

[0008] Figure 2 In an instance Figure 1 A schematic diagram of at least a portion of a VPD.

[0009] Figure 3 In an instance Figure 1 A schematic diagram of a VPD.

[0010] Figure 4 In an instance Figure 1 A schematic diagram of the primary and secondary inductors of a TLVR.

[0011] Figure 5 This is a top view of the surface of the substrate of a VPD in one example.

[0012] Figure 6 This is a side view of the core of a four-phase TLVR in one example.

[0013] Figure 7 This is a schematic diagram of the primary and secondary inductors of a four-phase TLVR in one example.

[0014] Figure 8This is a schematic diagram illustrating the current direction in the two pairs of primary / secondary inductors of a TLVR in one example.

[0015] Figure 9 This is a perspective view of the primary and secondary inductors of a four-phase TLVR in an example.

[0016] Figure 10 In an instance Figure 9 A bottom view of the primary and secondary inductor pairs of a four-phase TLVR. Detailed Implementation

[0017] Use the same reference numerals or other reference indicators in the drawings to indicate the same or similar features (functionally and / or structurally).

[0018] Figure 1 This is a schematic diagram of system 100, which includes an integrated circuit (IC) 130 (e.g., a processor, general-purpose central processing unit (CPU), graphics processing unit (GPU), etc.) coupled to one surface 120b of a circuit board 120 (e.g., a printed circuit board) and a vertical power delivery (VPD) module 110 coupled to an opposing surface 120a of the circuit board 120. In one example, the VPD module 110 and IC 130 are attached to the circuit board 120 by means of a ball grid array. The VPD module 110 includes a voltage regulator, such as a transinductance voltage regulator (TLVR). The VPD module 110 provides power to the IC 130 through electrical connections (e.g., traces and vias) in the circuit board 120. Power is delivered vertically relative to the IC 130 (e.g., along...). Figure 1 By stacking VPD modules 110 on the z-axis, the electrical connection on the circuit board 120 between the VPD modules 110 and the IC 130 can be shorter compared to a case where the power modules are placed laterally (e.g., along the x / y axis) adjacent to the IC 130 on the same surface of the circuit board 120. With a shorter electrical connection for transferring power from the VPD modules 110 to the IC 130, less power is lost (and wasted) due to the parasitic resistance of the connection. Furthermore, by arranging the VPD modules 110 on the surface of the circuit board 120 opposite to the IC 130, the overall footprint of the system 100 can be reduced, and more space on the circuit board can be available for other components.

[0019] Figure 2This is a schematic diagram of at least a portion of VPD module 110. VPD module 110 includes an n-phase TLVR, comprising a controller 202, half-bridges 204a, 204b, 204c, ..., 204n (collectively referred to as half-bridges 204), primary inductors Lp1, Lp2, Lp3, ..., Lpn (collectively referred to as primary inductors Lp), secondary inductors Ls1, Ls2, Ls3, ..., Lsn (collectively referred to as secondary inductors Ls), and a compensation inductor Lc. The compensation inductor Lc adjusts the transient performance of the TLVR. The compensation inductor Lc may be provided by physical inductors or by the parasitic inductance of the traces connecting the secondary inductors Ls and the leakage inductance of the secondary inductors. In one example, VPD module 110 includes a four-phase TLVR, where n is 4. As a four-phase TLVR, the VPD module 110 includes four half-bridges 204, four primary inductors Lp, and four secondary inductors Ls.

[0020] Half-bridge 204a includes a high-side (HS) switch (e.g., a transistor) coupled to a low-side (LS) switch (e.g., a transistor) at switching terminal 205a. Half-bridges 204b, 204c, and 204n are similarly constructed and have corresponding switching terminals 205b, 205c, and 205n. Switching terminals 205a-205n are collectively referred to as switching terminal 205. An input voltage VIN is provided to one terminal of the HS switch. One terminal of each primary inductor Lp is coupled to the corresponding switching terminal 205. The other terminals of the primary inductors Lp are coupled together at output terminal 208, which provides the output voltage VO. An output capacitor Cout is coupled between output terminal 208 and ground.

[0021] Controller 202 includes outputs coupled to each half-bridge 204. Controller 202 can control which of the HS or LS switches is closed at any given time. Controller 202 controls the duty cycle of each half-bridge 204 while operating the half-bridge with a phase delay. For example, in a two-phase TLVR, each half-bridge operates 180 degrees out of phase with respect to the other half-bridge. In, for example... Figure 2 In the four-phase TLVR shown, controller 202 causes the half-bridges to operate out of phase with respect to each other at a 90-degree angle.

[0022] The secondary inductor Ls and the compensating inductor Lc are coupled in series between the ground terminals. Each secondary inductor Ls is magnetically coupled to its corresponding primary inductor Lp. For example, secondary inductors Ls1, Ls2, Ls3, and Lsn are magnetically coupled to their corresponding primary inductors Lp1, Lp2, Lp3, and Lpn. In one instance, each secondary inductor Ls is encapsulated in the same material as its corresponding primary inductor. In one instance, the encapsulation material is a magnetic material, referred to herein as a core. By encapsulating the corresponding primary and secondary inductors in the same core, each such pair of primary and secondary inductors forms a transformer. Each pair of primary and secondary inductors encapsulated in the same magnetic material is referred to herein as a primary / secondary pair.

[0023] A change in current in one of the primary or secondary inductors of a given primary / secondary pair induces a current in the other inductor of the pair. Following a sudden change in load conditions (e.g., a sudden increase or decrease in current from VPD to IC 130), the change in current through one of the primary inductors Lp immediately induces a corresponding current in its magnetically coupled secondary inductor Ls. Because the secondary inductors Ls are series-coupled, the same induced current flows through the other secondary inductor Ls, thereby inducing a voltage back in its corresponding primary inductor. In this way, all other things being equal, a TLVR can have a faster transient response than a multiphase converter without a secondary inductor loop.

[0024] The primary inductor Lp has a "point-added" terminal on its left and a non-point-added terminal on its right. The point-added terminal of the primary inductor Lp is coupled to switching terminal 205, and the non-point-added terminals are coupled together on the right side of the primary inductor. The secondary inductor Ls also has a point-added terminal on its left. Because the secondary inductors Ls are series-coupled, the non-point-added terminal of each secondary inductor is coupled to the point-added terminal of the next secondary inductor in the series loop. The example described herein relates to the arrangement of the primary inductor Lp and the secondary inductor Ls such that the connection (trace, conductor, etc.) between the non-point-added and point-added terminals of adjacent secondary inductors Ls is located without passing through the magnetic material magnetically coupling each pair of primary and secondary inductors. Otherwise, if such a connection passed through the magnetic material, the inductance and coupling between the primary and secondary windings would change (e.g., decrease). The resistance of the secondary winding would also change (e.g., increase).

[0025] Figure 3This is a schematic diagram of a VPD module 110, which includes a semiconductor die 310, a substrate 320 and 350, and a magnetic material 338 containing a primary inductor Lp and a secondary inductor Ls. The magnetic material 338 may comprise ferrite, iron powder, amorphous materials, and nanocrystalline cores embedded in an insulating material (e.g., epoxy resin, resin, etc.). An example of the magnetic material 338 is a magnetic molding compound. The magnetic material can increase the overall inductance of the primary inductor Lp and the secondary inductor Ls, while providing / improving DC electrical insulation between the inductors. Figure 3 In the example, each pair of magnetically coupled primary inductors Lp and secondary inductors Ls are vertically stacked within magnetic material 338, wherein each primary inductor Lp and its corresponding secondary inductor Ls vertically overlap (e.g., along the...). Figure 3 (z-axis). Substrate 320 has opposing surfaces 320a and 320b. Magnetic material 338 has opposing surfaces 338a and 338b. Semiconductor die 310 is on surface 320a of substrate 320, and surface 338a of magnetic material 338 is on surface 320b of substrate 320. Substrate 350 is on surface 338b of substrate 338 and coupled to surface 338b via metal interconnect 342. In one example, semiconductor die 310 includes controller 202 and half-bridge 204. In some examples, semiconductor die 310, substrate 320, primary inductor Lp, secondary inductor Ls, and magnetic material 338 are part of a packaged integrated circuit.

[0026] Each primary inductor Lp includes a lateral segment 362 and vertical segments 361 and 363. Each lateral segment of the primary inductor Lp may be along a first axis (e.g., Figure 3 The z-axis extends, and each vertical segment may extend along a second axis (e.g., at an angle to the first axis) and each vertical segment may extend along a second axis (e.g., at an angle to the first axis). Figure 3 The vertical segment 361 extends between one end of the transverse segment 362 and the surface 338a of the magnetic material 338, wherein a portion of the vertical segment 361 is exposed by the magnetic material 338 and forms an output terminal electrically coupled to the metal interconnect 342 (e.g., along the x-axis or y-axis). Figure 2 The output terminal 208). Via the metal interconnect 342, the output terminal can be coupled to other components, such as... Figure 3 The Cout capacitor shown, and Figure 1 The circuit board 120 and IC 130. Furthermore, a vertical segment 362 extends from the opposite ends of the transverse segment 362 and the surface 338b of the magnetic material 338, wherein a portion of the vertical segment 362 is exposed by the magnetic material 338 and coupled to a switching terminal (e.g., one of switching terminals 205a-n) via pads on the surface 320b of the substrate 320 and interconnects (e.g., traces and vias) in the substrate 320.

[0027] Furthermore, each secondary inductor Ls includes a lateral segment 372 and vertical segments 371 and 373. Each lateral segment of the secondary inductor Ls may be along the same first axis as the lateral segment of the corresponding primary inductor Lp (e.g., Figure 3 The secondary inductor Ls extends along the z-axis, and each vertical segment of the secondary inductor Ls may extend along the same second axis as the corresponding vertical segment of the primary inductor Lp (e.g., the z-axis). Figure 3 The vertical segment 371 of each stage inductor Ls extends between one end of the transverse segment 372 and the surface 338a of the magnetic material 338, and another vertical segment 372 extends from the opposite end of the transverse segment 372 and the surface 338a. Parts of the two vertical segments 372 may be exposed by the magnetic material 338 and may be electrically insulated from the output terminals and switching terminals by the magnetic material 338.

[0028] Vertical segments 363 of the primary inductor Lp are coupled together and to one or more capacitors Cout via metal interconnects 342 and the metal interconnects of the substrate 350. Capacitors Cout are also coupled together via metal interconnects (e.g., pads on surface 320a of the substrate 350). One or more input capacitors Cin may also be included and connected together via metal interconnects on the substrate 320. Furthermore, each vertical end 361 of the primary inductor Lp is coupled to a corresponding switching terminal 205 on the semiconductor die 310 via metal interconnects (e.g., pads on surface 320b of the substrate 320, traces and vias in the substrate 320, etc.), as described above.

[0029] Figure 4 This is a perspective view of the primary inductor Lp and secondary inductor Ls in a four-phase TLVR. The primary inductor Lp includes inductors Lp1, Lp2, Lp3, and Lp4. The secondary inductor includes inductors Ls1, Ls2, Ls3, and Ls4. Figure 4 In the example shown, the primary inductors Lp1-Lp4 and the corresponding secondary inductors Ls1-Ls4 are vertically overlapped (e.g., along the path of the primary inductors Lp1-Lp4). Figure 4 (z-axis). Each pair of primary and secondary inductors is covered by magnetic material 338. Primary inductor Lp1 and secondary inductor Ls1 are in magnetic material 338_1. Primary inductor Lp2 and secondary inductor Ls2 are in magnetic material 338_2. Primary inductor Lp3 and secondary inductor Ls3 are in magnetic material 338_3. Primary inductor Lp4 and secondary inductor Ls4 are in magnetic material 338_4. In some instances, the magnetic material 338 of adjacent pairs of primary and secondary inductors may be spaced apart to improve electrical insulation.

[0030] Primary inductor Lp1 has a lateral segment 362a and vertical segments 361a and 363a. Vertical segment 361a extends from one end of lateral segment 362a to the bottom surface 338_1a of magnetic material 338_1, and vertical segment 363a extends from the other end of lateral segment 362a to the top surface 338_1b of magnetic material 338_1. Primary inductor Lp2 has a lateral segment 362b and vertical segments 361b and 363b. Vertical segment 361b extends from one end of lateral segment 362b to the bottom surface 338_2a of magnetic material 338_2, and vertical segment 363b extends from the other end of lateral segment 362b to the top surface 338_2b of magnetic material 338_2. Primary inductor Lp3 has a lateral segment 362c and vertical segments 361c and 363c. A vertical segment 361c extends from one end of the transverse segment 362c to the bottom surface 338_3a of the magnetic material 338_3, and a vertical segment 363c extends from the other end of the transverse segment 362c to the top surface 338_3b of the magnetic material 338_3. The primary inductor Lp4 has a transverse segment 362d and vertical segments 361d and 363d. A vertical segment 361d extends from one end of the transverse segment 362d to the bottom surface 338_4a of the magnetic material 338_4, and a vertical segment 363d extends from the other end of the transverse segment 362d to the top surface 338_4b of the magnetic material 338_4.

[0031] Figure 4 The four primary / secondary inductor pairs are along the axis (e.g., Figure 4 The primary inductors Lp2 and Ls2 are parallel to each other (their x-axis or y-axis is parallel to each other). The primary inductor Lp2 and secondary inductor Ls2 are arranged in a reverse orientation relative to the primary inductor Lp1 and secondary inductor Ls1, such that the terminals of Lp2 and Ls1 are on opposite sides of the corresponding magnetic materials 338_2 and 338_1. Similarly, the primary inductor Lp3 and secondary inductor Ls3 are reversed relative to the primary inductor Lp2 and secondary inductor Ls2. Furthermore, the primary inductor Lp4 and secondary inductor Ls4 are reversed relative to the primary inductor Lp3 and secondary inductor Ls3. The connection between the series-connected secondary inductors Ls can be made via metal interconnects on substrate 320 by reversing the position of the connection to the switching terminals from adjacent pairs of primary and secondary inductors to the corresponding half-bridges, rather than having such connections pass through magnetic materials 338-1 to 338-4. Figure 5 The diagram illustrates the connection between adjacent secondary inductors Ls. This arrangement reduces the complexity of forming the secondary inductors Ls and the electrical connections between them. Furthermore, having electrical connections within the magnetic material reduces the amount of magnetic material covering the inductors, which reduces the total inductance, increases losses in the secondary inductors, and degrades the electrical isolation between the secondary and primary inductors. Figure 4 Examples of the arrangement of primary and secondary inductors shown in subsequent figures allow the connection between the secondary inductors to be formed in the substrate and outside the magnetic material, and can solve at least some of the problems described above.

[0032] Figure 5 This is a top view of surface 320b of substrate 320, showing where the vertical segments 361a, 361b, 361c, and 361d corresponding to the primary inductors Lp1-Lp4 land on substrate 320. Because the vertical segments 361a-361d are coupled to the corresponding half-bridges (e.g., Figure 2 The switching terminals of the half-bridge 204 in the substrate 320 are used, so the landing pads on the surface 320b of the substrate 320 for the vertical segments 361a-361d are identified as Vsw1 (for vertical segment 361a), Vsw2 (for vertical segment 361b), Vsw3 (for vertical segment 361c), and Vsw4 (for vertical segment 361d). The four blocks marked Vout represent portions of the other vertical segments (363a-363d) of the primary inductors Lp1-Lp4 exposed in the magnetic material 338 on the surface 338b (e.g., 338_1b, 338_2b, 338_3b, and 338_4b) opposite to the substrate 320.

[0033] Figure 5 Landing pads 501-508 on surface 320b of substrate 320 also mark the vertical segments of the secondary inductor Ls. Landing pads 501 and 502 correspond to the vertical segments 371a and 373a of secondary inductor Ls1, respectively. Landing pads 503 and 504 correspond to the vertical segments 371b and 373b of secondary inductor Ls2, respectively. Landing pads 505 and 506 correspond to the vertical segments 371c and 373c of secondary inductor Ls3, respectively. Landing pads 507 and 508 correspond to the vertical segments 371d and 373d of secondary inductor Ls4, respectively. The lateral segments 372a to 372d of secondary inductors Ls1 to Ls4 are shown in dashed outline, indicating that the lateral segments of the secondary inductors are from the corresponding lateral segments 362a-362d of the primary inductors Lp1 to Lp4. Figure 5 (Not specifically shown in the image) Coverage. Landing pads 501-508 are electrically isolated from output terminals 208 and switching terminals 205.

[0034] Substrate 320 includes metal interconnects 511, 512, and 513. Metal interconnect 511 couples landing pads 502 and 503 together, and thus couples vertical segments 373a and 371b of secondary inductors Ls1 and Ls2 together. Metal interconnect 512 couples landing pads 504 and 505 together, and thus couples vertical segments 373b and 371c of secondary inductors Ls2 and Ls3 together. Metal interconnect 513 couples landing pads 506 and 507 together, and thus couples vertical segments 373c and 371d of secondary inductors Ls3 and Ls4 together. Metal interconnects 511, 512, and 513 on substrate 320 further connect secondary inductors Ls1-Ls4 in series. In some instances, metal interconnects 511, 512, and 513 may be located below surface 320b of substrate 320. In some instances, metal interconnects 511, 512, and 513 may be located on surface 320b and extend from (or be incorporated into) landing pads 502, 503 (for 511), 504, 505 (for 512), and 506, 507 (for 513).

[0035] Figure 6 Side views of four magnetic materials / cores 338_1 to 338_4. Figure 6 The primary and secondary inductors in the magnetic material are not shown in the diagram. In this example, each magnetic material 338a_1-338_4 comprises vertically extending (e.g., along) Figure 6 The gaps (along the z-axis). Magnetic material 338_1 has a gap 601. Magnetic material 338_2 has a gap 602. Magnetic material 338_3 has a gap 603. Magnetic material 338_4 has a gap 604. Each gap 601-604 is partially downward (e.g., along the z-axis). Figure 6 The z-axis extends from the corresponding top surfaces 338_1b to 338_4b toward the opposite bottom surfaces 338_1a to 338_4a. The gaps 601-604 may also extend laterally along (or parallel to) the lateral segments of the primary and secondary inductors (e.g., along...). Figure 6 The gaps may extend along the flux path (either along the x-axis or y-axis) or otherwise. The gaps may be filled with air or a non-magnetic material (e.g., epoxy, resin, plastic, or ceramic spacers). Gap 601-604 may be useful if the magnetic materials 338_1 to 338_4 have relatively high permeability, whereby gap 601-604 can confine the magnetic field to prevent core saturation.

[0036] Figure 7This is a schematic diagram of primary inductors Lp1-Lp4 and secondary inductors Ls1-Ls4, wherein the lateral segments 362a-363d of the primary inductors and the lateral segments 372a-372d of the secondary inductors overlap laterally along the x-axis on the substrate 320 (e.g., along...). Figure 7 (x-axis or y-axis), not like Figure 3-6 The primary and secondary inductors are vertically overlapped. S2 represents the distance between a primary and secondary inductor pair and its neighboring primary / secondary inductor pair. For example, S2 represents the distance between the lateral segment 362a of primary inductor Lp1 and the lateral segment 372b of secondary inductor Ls2, the distance between the lateral segment 362b of primary inductor Lp2 and the lateral segment 372c of secondary inductor Ls3, and the distance between the lateral segment 362c of primary inductor Lp3 and the lateral segment 372d of secondary inductor Ls4. S1 represents the distance between the primary and secondary inductors in each primary / secondary inductor pair. For example, S1 represents the distance between the lateral segment 362a of the primary inductor Lp1 and the lateral segment 372a of the secondary inductor Ls1, the distance between the lateral segment 362b of the primary inductor Lp2 and the lateral segment 372b of the secondary inductor Ls2, the distance between the lateral segment 362c of the primary inductor Lp3 and the lateral segment 372c of the secondary inductor Ls3, and the distance between the lateral segment 362d of the primary inductor Lp4 and the lateral segment 372d of the secondary inductor Ls4. In one instance, S1 is greater than S2. In another instance, S1 is equal to S2. Figure 7 The advantage of this configuration is the higher inductance and magnetic coupling depending on the coil and core size and aspect ratio.

[0037] exist Figure 4-6 In one example, each pair of magnetically coupled primary and secondary inductors is contained within its own respective core. In another example, two pairs of primary / secondary inductors are contained within a single core. Therefore, in a four-phase TLVR example, this TLVR would contain two cores: one core containing two pairs of primary / secondary inductors, and the other core containing the other two pairs of primary / secondary inductors.

[0038] Figure 8This is a schematic diagram of an example of a core / magnetic material 338 comprising two pairs of primary / secondary inductors. One pair comprises a primary inductor Lp1 and a secondary inductor Ls1, and the other pair comprises a primary inductor Lp2 and a secondary inductor Ls2. The magnetic material 338 improves the magnetic coupling between the primary inductor Lp1 and the secondary inductor Ls1, and also improves the magnetic coupling between the primary inductor Lp2 and the secondary inductor Ls2. The magnetic material 338 also improves the magnetic coupling between the primary inductors Lp1 and Lp2. Because the switching terminals of the primary inductors Lp1 and Lp2 are on opposite sides, currents of different phases can flow in opposite directions in the lateral segments of the primary inductors Lp1 and Lp2. For example, as... Figure 8 As shown, the current I1 flowing through the primary inductor Lp1 flows in the opposite direction to the current I2 flowing through the adjacent primary inductor Lp2. Because currents I1 and I2 are in opposite directions, the magnetic flux generated by the current I1 flowing through the primary inductor Lp1 is at least partially canceled out by the magnetic flux generated by the current I2 flowing through the primary inductor Lp2. Due to the reduced magnetic flux, in Figure 8 In this example, the primary and secondary inductors can have a large inductance per unit volume, which allows for a reduction in the size of the primary and secondary inductors for the same current ripple. Such an arrangement reduces the overall footprint of the TLVR and VPD.

[0039] Figure 9 This is a perspective view of the primary inductor Lp and secondary inductor Ls in a four-phase TLVR, where the magnetic coupling pairs of the primary and secondary inductors are arranged in a loop on substrate 320. Figure 9 In one example, the ring is generally rectangular in shape, with each pair of primary and secondary inductors forming one side of the rectangle. Other examples of rings containing pairs of primary and secondary inductors may include squares, parallelograms, circles, etc., and may contain more than four pairs of primary and secondary inductors. The lateral segment 362a of primary inductor Lp1 forms an angle A1 relative to the lateral segment 362b of the adjacent primary inductor Lp2. Similar angles are formed between lateral segments 362b and 362c, between lateral segments 362c and 362d, and between lateral segments 362d and 362a. In one example, angle A1 is approximately 90 degrees. In other examples, the angle A1 between a pair of adjacent primary inductor lateral segments may differ from the angle between another pair of lateral segments. Some vertical segments 371 and 373 of adjacent secondary inductors Ls, such as vertical segment 371b of Ls2 and vertical segment 373a of Ls1, are connected via metal interconnects of substrate 320. Figure 9Electrical coupling (not shown). One or more capacitors, such as Cin and Cout, can be positioned inside the loop of the primary / secondary inductor pair. Such an arrangement reduces the overall height of the system (e.g., along the z-axis). In instances where the magnetic material has relatively high permeability, Figure 9 The magnetic materials 338a_1 to 338a_4 may include those mentioned above. Figure 6 The described gap (e.g., gaps 601-604). In instances where magnetic materials 338a_1 to 338a_4 comprise magnetic materials with relatively low permeability, magnetic materials 338a_1 to 338a_4 do not contain gaps.

[0040] Figure 10 for Figure 9 A bottom view of the primary / secondary inductor pair loop. Figure 10 Also shown is a substrate 320 ( Figure 10 Metal interconnects 1001, 1002, and 1003 (not shown) are on or in the following configuration. Metal interconnect 1001 couples the vertical segment 373a of secondary inductor Ls1 to the vertical segment 371b of secondary inductor Ls2. Metal interconnect 1002 couples the vertical segment 373b of secondary inductor Ls2 to the vertical segment 371c of secondary inductor Ls3. Metal interconnect 1003 couples the vertical segment 373c of secondary inductor Ls3 to the vertical segment 371d of secondary inductor Ls4. If the parasitic inductance of the combined metal interconnects 1001 to 1004 is sufficiently large to meet transient performance requirements, the vertical segment 373d of secondary inductor Ls4 can be coupled to the vertical segment 371a of secondary inductor Ls1 via metal interconnect 1004 to form a compensating inductor Lc. In another example, a single inductor Lc can be coupled between the corresponding vertical segments 373d and 371a.

[0041] In this specification, the term "coupling" may encompass a connection, transmission, or signal path that achieves a functional relationship consistent with this specification. For example, if device A generates a signal to control device B to perform an action, then: (a) in a first instance, device A is coupled to device B via a direct connection; or (b) in a second instance, if intermediate component C does not alter the functional relationship between device A and device B, then device A is coupled to device B via intermediate component C, such that device B is controlled by the control signal generated by device A.

[0042] Furthermore, in this description, the statement "based on" means "at least partially based on". Therefore, if X is based on Y, then X can depend on Y and any number of other factors.

[0043] A device “configured to” perform a task or function may be configured (e.g., programmed and / or hardwired) to perform the function during manufacturing by the manufacturer, and / or may be configured (or reconfigurable) by the user after manufacturing to perform the function and / or other additional or alternative functions. The configuration may be achieved through firmware and / or software programming of the device, through the construction and / or layout of hardware components and the interconnection of the device, or a combination thereof.

[0044] As used herein, the terms “terminal,” “node,” “interconnect,” “lead,” and “pin” are used interchangeably. Unless specifically stated otherwise, these terms are generally used to refer to interconnections or ends between device elements, circuit elements, integrated circuits, devices, or other electronic or semiconductor components.

[0045] The circuits or devices described herein as containing certain components may be substantially adapted to be coupled to those components to form the described circuit system or device. For example, the described circuits, such as those comprising one or more semiconductor elements (e.g., transistors), one or more passive elements (e.g., resistors, capacitors, and / or inductors), and / or one or more sources (e.g., voltage sources and / or current sources), may conversely comprise semiconductor elements within only a single physical device (e.g., semiconductor dies and / or integrated circuit (IC) packages), and may be adapted to be coupled to at least some of the passive elements and / or sources to form the described structure, for example, during or after manufacture by an end user and / or a third party.

[0046] The circuits described herein can be reconfigured to include additional or different components to provide functionality at least partially similar to that available before the component replacement. Unless otherwise stated, components shown as resistors generally represent one or more elements coupled in series and / or parallel to provide the amount of impedance represented by the resistor shown. For example, a resistor or capacitor shown and described herein as a single component may alternatively be multiple resistors or capacitors coupled in parallel between the same nodes. For example, a resistor or capacitor shown and described herein as a single component may actually be multiple resistors or capacitors coupled in series between the same two nodes as the single resistor or capacitor.

[0047] While some elements of the described examples are contained within the integrated circuit and others are external to the integrated circuit, in other example embodiments, additional or fewer features may be incorporated into the integrated circuit. Additionally, some or all of the features described as external to the integrated circuit may be contained within the integrated circuit, and / or some features described as internal to the integrated circuit may be incorporated externally. As used herein, the term "integrated circuit" means one or more circuits that are: (i) incorporated in / above a semiconductor substrate; (ii) incorporated in a single semiconductor package; (iii) incorporated in the same module; and / or (iv) incorporated in / on the same printed circuit board.

[0048] The use of the phrase "grounding" in the foregoing description includes chassis grounding, ground wire grounding, floating grounding, virtual grounding, digital grounding, general grounding, and / or any other form of grounding connection applicable to or suited to the teachings herein. In this specification, unless otherwise stated, "about," "approximately," or "generally" preceding a parameter means within + / - 10% of said parameter, or, if the parameter is zero, within a reasonable range of values ​​approximately zero.

[0049] Within the scope of the claims, modifications to the described instances are possible, and other instances are also possible.

Claims

1. A power module comprising: A substrate having a first surface and a second surface opposite to the first surface, and a first metal interconnect, a second metal interconnect, and a third metal interconnect; A semiconductor die, which is on the first surface and coupled to the first metal interconnect; An encapsulating material having a third surface and a fourth surface opposite to the third surface, the third surface being on the second surface; A primary inductor, each primary inductor having a first lateral segment, a first vertical segment extending between a first end of the first lateral segment and the third surface, and a second vertical segment extending from a second end of the first lateral segment to the fourth surface, in the encapsulation material. as well as Secondary inductors, each inductor having a second lateral segment and a third and fourth vertical segments extending from corresponding ends of the second lateral segment to the third surface, wherein a pair of adjacent third vertical segments are coupled via a second metal interconnect, and a pair of adjacent fourth vertical segments are coupled via the third metal interconnect.

2. The power module of claim 1, wherein the pair of adjacent third vertical segments are adjacent to the first vertical segment of the first primary inductor and the second vertical segment of the second primary inductor; and The pair of adjacent fourth vertical segments are adjacent to the second vertical segment of the first primary inductor and the first vertical segment of the second primary inductor.

3. The power module of claim 1, wherein the secondary inductor is coupled in series via the adjacent fourth vertical segment and the third metal interconnect.

4. The power module of claim 1, wherein the first lateral segment of each of the primary inductors is parallel to the second lateral segment of the corresponding one of the secondary inductors.

5. The power module of claim 4, wherein the first lateral segment of each of the primary inductors vertically overlaps with the second lateral segment of the corresponding one of the secondary inductors.

6. The power module of claim 4, wherein the first lateral segment of each of the primary inductors laterally overlaps with the second lateral segment of the corresponding one of the secondary inductors.

7. The power module of claim 1, further comprising a capacitor on at least one of the first surface or the second surface of the substrate and coupled to the first metal interconnect.

8. The power module of claim 1, wherein the substrate is a first substrate, and the power module further includes a second substrate on the fourth surface, and the second vertical segment is coupled to the second substrate.

9. The power module of claim 8, further comprising a capacitor on the second substrate, wherein the second substrate includes a fourth metal interconnect and the capacitor is coupled to the second vertical segment via the fourth metal interconnect.

10. The power module of claim 1, wherein the first lateral segments of adjacent primary inductors are parallel to each other, and the encapsulation material comprises a first core encapsulating a pair of adjacent first lateral segments.

11. The power module of claim 10, further comprising a capacitor above and coupled to the primary inductor.

12. The power module of claim 1, wherein the first lateral segments of adjacent primary inductors are at an angle to each other.

13. The power module of claim 12, further comprising a capacitor surrounded by the primary inductor, the capacitor being coupled to the primary inductor.

14. The power module of claim 1, wherein the encapsulation material comprises a magnetic material.

15. The power module of claim 14, wherein the encapsulating material comprises a gap in the first lateral segment extending from the third surface or the fourth surface and parallel to at least one of the primary inductors.

16. The power module of claim 1, wherein the semiconductor die comprises a half-bridge, each having a corresponding switching terminal, the first vertical segment of each of the primary inductors being coupled to a corresponding one of the switching terminals, and the second vertical segment of the secondary inductor being coupled to a power output.

17. The power module of claim 1, wherein the substrate, the semiconductor die, the encapsulation material, the primary inductor, and the secondary inductor are part of a packaged integrated circuit.

18. A system comprising: A circuit board having a first surface and a second surface opposite to the first surface; A first integrated circuit is located on the first surface; as well as A trans-inductor voltage regulator (TLVR) module, which is located on the second surface and coupled to the first integrated circuit via the circuit board, the TLVR module comprising: A substrate having a third surface and a fourth surface opposite to the third surface, as well as a first metal interconnect, a second metal interconnect, and a third metal interconnect; A semiconductor die, which is located on the third surface and coupled to the first metal interconnect; An encapsulating material having a fifth surface and a sixth surface opposite to the fifth surface, the sixth surface being on the fourth surface; Each primary inductor in the encapsulation material has a first lateral segment, a first vertical segment extending between a first end of the first lateral segment and the first surface, and a second vertical segment extending from a second end of the first lateral segment to the sixth surface. as well as Secondary inductors, each having a second lateral segment and a third and fourth vertical segment extending from a corresponding end of the second lateral segment to the fifth surface, wherein a pair of adjacent third vertical segments are coupled via the second metal interconnect, and a pair of adjacent fourth vertical segments are coupled via the third metal interconnect.

19. The system of claim 18, wherein the secondary inductor is coupled in series via the adjacent fourth vertical segment and the third metal interconnect.

20. The system of claim 18, wherein the first lateral segment of each of the primary inductors overlaps with the second lateral segment of a corresponding one of the secondary inductors between the fifth surface and the sixth surface.

21. The system of claim 18, wherein the first lateral segments of adjacent primary inductors are parallel to each other, and the encapsulation material comprises a first core encapsulating a pair of adjacent first lateral segments.

22. The system of claim 18, wherein the first lateral segment of the adjacent primary inductor is arranged in a ring within the encapsulation material.

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