SiC power module with embedded shell and assembling method

Abstract

The invention discloses a SiC power module with an embedded shell and an assembling method, and relates to the field of SiC power modules. The SiC power module with the embedded shell comprises the embedded shell, a plurality of independent cavities are arranged in the embedded shell, a heat dissipation base is embedded in the independent cavities, the top of the heat dissipation base is fixedly connected with an AMB substrate, and the AMB substrate is fixedly connected with the embedded shell. According to the SiC power module with the embedded shell and the assembly method, through the laminated busbar design of the terminal and the low-inductance planar circuit integrated on the AMB substrate, and through the cooperation design of parallel connection in combination with the metal foil strips arranged in parallel, the parasitic inductance of the module is greatly reduced to be less than 3-5nH, switch overshoot and oscillation are effectively inhibited, the EMC performance is improved, and the cost is reduced. The high thermal conductivity ceramic insulating layer in the AMB substrate is used for efficiently conducting heat to the heat dissipation base, the AMB substrate remarkably shortens the heat conduction path by means of the excellent thermal conductivity and reliable electrical insulation performance, and the complete thermal resistance of the module from a chip junction area to the environment is effectively reduced.

Description

Technical Field

[0001] This invention relates to the field of SiC power module technology, specifically to an embedded SiC power module and its assembly method. Background Technology

[0002] Silicon carbide (SiC) power modules, with their high breakdown electric field strength, high thermal conductivity, low switching losses, and excellent high-temperature operating capabilities, have become key components in high-efficiency, high-power-density applications such as electric drive systems for new energy vehicles, industrial frequency conversion drives, and renewable energy inverters.

[0003] The widely used bonded wire interconnect packaging structure has significant drawbacks: due to the long wiring path and large power loop area of ​​the bonded wires, parasitic inductance of up to 10nH is inevitably introduced. This parasitic inductance can trigger voltage overshoot, ringing, and electromagnetic interference (EMI) during high-speed switching of SiC power modules. This not only weakens the high-frequency and high-efficiency advantages that SiC power modules should possess, but may also cause device overvoltage breakdown or drive signal distortion, seriously threatening the safety and stability of power electronic systems.

[0004] In terms of thermal management, traditional power modules generally adopt a single-sided cooling structure combined with direct bonding of copper ceramic substrates for heat dissipation. However, this solution has a long heat dissipation path, many interfaces, and high overall thermal resistance, making it difficult to effectively dissipate the concentrated heat flow generated by high power density SiC chips. This leads to increased junction temperature, limits the module's ability to continuously output current, and exacerbates the accumulation of thermal stress.

[0005] Furthermore, the bonding wire connection itself carries inherent reliability risks. Under frequent power or temperature cycling conditions, alternating thermomechanical stresses can occur between the chip, bonding wire, and substrate due to the mismatch in the coefficients of thermal expansion (CTE) of the materials. This can easily lead to bonding point fatigue, void propagation, or even wire breakage, significantly shortening the module's lifespan.

[0006] To address the shortcomings of existing technologies, this invention provides an embedded SiC power module and its assembly method to solve the aforementioned problems. Summary of the Invention

[0007] To address the shortcomings of existing technologies, this invention provides an embedded SiC power module and its assembly method, solving the problem of parasitic inductance exceeding 10nH that is unavoidably introduced due to the long bonding wire wiring paths and large power loop areas. This parasitic inductance can trigger voltage overshoot, ringing, and electromagnetic interference (EMI) during high-speed switching of the SiC power module, not only weakening the high-frequency and high-efficiency advantages that the SiC power module should possess, but also potentially causing device overvoltage breakdown or drive signal distortion, seriously threatening the safety and stability of power electronic systems. Regarding thermal management, traditional power modules generally adopt a single-sided cooling structure combined with direct bonding to a copper-ceramic substrate for heat dissipation. However, this solution has a long heat dissipation path, multiple interfaces, and high overall thermal resistance, making it difficult to effectively dissipate the concentrated heat flow generated by high-power-density SiC chips, leading to increased junction temperature, limiting the module's continuous current output capability, and exacerbating thermal stress accumulation. Furthermore, the bonding wire connections themselves have inherent reliability risks. Under frequent power or temperature cycling conditions, alternating thermomechanical stress is generated between the chip, bonding wires and substrate due to the mismatch of the coefficient of thermal expansion (CTE) of the materials. This can easily lead to bonding point fatigue, void expansion and even metal wire breakage, significantly shortening the module's service life.

[0008] To achieve the above objectives, the present invention provides the following technical solution: a SiC power module with an embedded housing and an assembly method thereof, comprising: An embedded housing, wherein a plurality of independent chambers are arranged inside the embedded housing; A heat dissipation base is embedded in the independent chamber; An AMB substrate is fixedly connected to the heat sink base, and a circuit pattern is etched on the AMB substrate. SiC chipset, disposed on the circuit pattern; A metal foil strip is disposed within the cavity of the embedded housing; The terminals are embedded on the outer side using a stacked common busbar method, and the terminals are soldered to the circuit pattern via metal foil strips. The circuit pattern includes a low-inductance planar circuit, which is connected in parallel with parallel metal foil strips.

[0009] Preferably, the circuit pattern includes an isolated chip mounting area, drive pads, drive signal traces, and power loops.

[0010] Preferably, the independent chamber located above the SiC chipset is provided with a gate driving board. The gate driving board is connected to the driving pads on the circuit pattern through short-pitch spring pins to form a driving loop, which shortens the driving loop and avoids coupling with high-power current.

[0011] Preferably, the top of the heat sink base is provided with a positioning mechanism for positioning and installing the AMB substrate, and the bottom of the heat sink base is provided with heat dissipation fins.

[0012] Preferably, the AMB substrate includes a substrate, the upper and lower surfaces of which are covered with a thick copper layer, and the thick copper layer is formed into a functional circuit pattern by precision etching.

[0013] Preferably, the substrate is made of a highly insulating aluminum nitride ceramic material.

[0014] Preferably, the SiC chipset is fixed to the isolated chip mounting area by a silver sintering process.

[0015] Preferably, the heat dissipation base is made of a high thermal conductivity metal material.

[0016] Preferably, the embedded housing is integrally injection molded from high-performance engineering plastic.

[0017] Preferably, a SiC power module assembly method includes the following steps: Step 1: A functionalized circuit pattern is formed on the thick copper layer on the AMB substrate through precision etching; Step 2: The SiC chipset is fixed to the isolated chip mounting area on the circuit pattern using a silver sintering process, achieving a robust low-resistance connection. Step 3: An embedded shell is integrally injection molded from high-performance engineering plastics, with several independent chambers designed inside the embedded shell; Step 4: Insert a heat sink into one of the independent chambers, and use the positioning mechanism on the heat sink to position and install the AMB substrate. Step 5: Embed the terminals in a stacked common busbar structure into the side wall of the embedded housing, and then solder the terminals to the circuit pattern with metal foil strips and connect them in parallel with the low-inductance planar circuit on the circuit pattern; Step 6: Embed the gate driver board into the independent chamber located on the SiC chipset, and directly solder it to the corresponding circuit pads on the circuit pattern using short-pitch spring pins to complete the SiC power module assembly.

[0018] The technical effects and advantages of this invention are as follows: The embedded SiC power module and its assembly method utilize power electrodes from the SiC chipset connected in parallel via low-inductance planar circuits integrated on an AMB substrate, combined with parallel-arranged metal foil strips; simultaneously, DC+ and DC-DC... The terminals adopt a stacked common busbar structure design, which makes the positive and negative conductors closely parallel. It effectively utilizes the principle of mutual cancellation of magnetic fields generated by reverse current, significantly reducing the loop area of ​​the power circuit and successfully controlling the overall parasitic inductance at an extremely low level of 3–5nH. This greatly suppresses voltage overshoot, ringing and electromagnetic oscillation generated by SiC power modules during high-speed switching, and improves the switching efficiency, operating stability and electromagnetic compatibility (EMC) performance of the system.

[0019] The embedded SiC power module and its assembly method achieve low inductance and high reliability connection by using a drive circuit through the circuit pattern on the AMB substrate and a spring pin to directly connect to the gate drive board. This shortens the drive circuit path, effectively isolates the sensitive gate drive signal from the high-current power circuit, avoids electromagnetic coupling and noise interference between the two, and further ensures the precise control and long-term reliability of the SiC module under high-frequency and high-voltage conditions.

[0020] The embedded SiC power module and its assembly method utilize the heat generated by the SiC chipset during operation. One heat dissipation path involves efficient heat conduction through the high thermal conductivity ceramic insulating layer in the AMB substrate to the heat sink, where heat dissipation fins further enhance heat dissipation efficiency. The other heat dissipation path is an upward auxiliary path, where heat is transferred to the embedded housing through the upper packaging material. This dual-sided heat dissipation design significantly shortens the heat conduction distance, effectively reducing the overall thermal resistance from the chip junction to the environment, improving the module's heat dissipation efficiency, and enabling the device to maintain a safe operating temperature even at higher power densities. Simultaneously, it slows down thermal stress accumulation and material aging, thereby significantly extending the power module's lifespan and operational reliability.

[0021] The embedded housing SiC power module and its assembly method form an integrated structure by embedding the housing and AMB substrate into a robust mechanical whole through an embedded bonding process. This significantly improves the module's vibration and shock resistance, effectively coping with harsh industrial or automotive application environments. The module abandons the traditional bonding wire connection method and instead uses a silver sintering process to achieve electrical and mechanical connections between the SiC chipset and the AMB substrate. This process forms a metallurgical bond between silver particles under high temperature and high pressure conditions, resulting in excellent electrical and thermal conductivity, as well as a high degree of matching of the thermal expansion coefficients at the connection interface. This eliminates failure modes such as easy detachment of traditional bonding wires, solder joint fatigue, and interface thermal resistance aging, greatly improving the long-term reliability and service life of the module under high temperature and high power cycling conditions. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a cross-sectional structural diagram of the present invention; Figure 3 This is a schematic cross-sectional view of the AMB substrate structure of the present invention.

[0024] In the diagram: 1. Embedded housing; 2. Heat sink base; 3. AMB substrate; 31. Substrate; 32. Thick copper layer; 4. SiC chipset; 5. Metal foil strip; 6. Terminal. Detailed Implementation

[0025] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] This embodiment discloses an embedded SiC power module and its assembly method, according to the appendix. Figure 1 To be continued Figure 3 As shown, it includes an embedded housing 1, a heat sink 2, an AMB substrate 3, a SiC chipset 4, a metal foil strip 5, terminals 6, and a gate driver board. The embedded housing 1 is made of high-performance engineering plastic through integral injection molding process, and has excellent mechanical strength, heat resistance, electrical insulation performance and dimensional stability. Inside the embedded housing 1, there are several independent chambers that are isolated from each other, which are used to accommodate the SiC chipset 4, the gate driving element and the terminal 6 respectively. A portion of the independent chambers are located on the upper side of the inner cavity of the embedded housing 1, and the gate driving board is installed in the upper independent chambers; the other portion is arranged on the lower side of the inner cavity to support the SiC chipset 4, the AMB substrate 3, and the heat sink 2. Through spatial separation, not only is physical isolation between the power circuit and the signal circuit achieved, effectively suppressing electromagnetic interference, but also facilitating the optimization of the thermal management path and the modular assembly of the module. The heat dissipation base 2 is made of a high thermal conductivity metal material, such as aluminum alloy or copper alloy, to ensure excellent thermal conductivity. A positioning mechanism is set on the heat dissipation base 2 for precise positioning and installation of the AMB substrate 3. The positioning mechanism uses precision-machined grooves and pins to ensure that the AMB substrate 3 can be accurately positioned during installation and maintain good thermal contact and mechanical stability. Several heat dissipation fins are arranged at equal intervals at the bottom of the heat dissipation base 2. These heat dissipation fins greatly increase the surface area of ​​the heat dissipation base 2, thereby significantly improving its heat dissipation efficiency. By increasing the contact area with the surrounding air, the heat dissipation fins can more effectively dissipate heat, reduce the operating temperature of the entire module, ensure that the internal SiC chipset 4 and other electronic components operate within a safe temperature range, extend the service life of the equipment, and improve system reliability. The AMB substrate 3 is precisely positioned and installed on the heat dissipation base 2 by a positioning mechanism. The AMB substrate 3 consists of a substrate 31 and a thick copper layer 32. The substrate 31 is made of highly insulating aluminum nitride (AlN) ceramic material and serves as the insulating layer of the AMB substrate 3, possessing excellent electrical isolation performance and high thermal conductivity. Both the upper and lower surfaces of the substrate 31 are covered with thick copper layers 32. The thick copper layers 32 not only enhance the overall thermal conductivity of the AMB substrate 3 but also provide a good electrical connection foundation. The upper thick copper layer 32 is processed by a precision etching process to form a functional circuit pattern. The circuit pattern is precisely composed of multiple functional areas, including: electrically isolated chip mounting area, driver pads, driver signal traces, power loops and low-inductance planar circuits. Each area is strictly partitioned in layout to ensure that power and signal paths do not interfere with each other, while optimizing electromagnetic compatibility and heat distribution. The SiC chipset 4 is fixed to the isolated chip mounting area on the circuit pattern by silver sintering process, achieving a robust low-resistance connection. This process forms a metallurgical bond between silver particles under high temperature and high pressure conditions, which not only has excellent electrical and thermal conductivity, but also has a high degree of matching of the thermal expansion coefficient of the connection interface. It fundamentally eliminates the failure modes such as easy detachment of traditional bonding wires, solder joint fatigue and interface thermal resistance aging, and greatly improves the long-term reliability and service life of the module under high temperature and high power cycling conditions. The SiC chipset 4 is fixed in the isolated chip mounting area on the circuit pattern by silver sintering process. At the same time, it can be efficiently conducted to the heat sink 2 through the high thermal conductivity ceramic insulating layer in the AMB substrate 3 for heat dissipation, forming a heat dissipation channel on the lower side. This effectively improves the overall double-sided heat dissipation capability of the module, reduces the thermal resistance from the junction to the environment, and enhances the reliability and thermal stability of long-term operation. The power chips in SiC chipset 4 are encapsulated with high thermal conductivity packaging materials. The selected materials can be advanced packaging media such as high thermal conductivity epoxy molding compound (EMC) or thermally conductive silicone. The materials not only have good electrical insulation and mechanical protection capabilities, but also have high thermal conductivity, which helps to efficiently conduct the heat generated by the chip during operation upward to the embedded shell 1, forming a continuous heat conduction path, further strengthening the upper heat dissipation channel, effectively improving the overall double-sided heat dissipation capability of the module, reducing the junction-to-environment thermal resistance, and enhancing the long-term reliability and thermal stability. The heat sink 2 is embedded into one of the independent chambers, and the embedded housing 1 covers the periphery of the AMB substrate 3; Terminal 6 adopts a stacked common busbar method and is embedded in the side wall of the embedded housing 1 to achieve high integration and compact layout; Terminal 6 consists of power terminals and signal terminals, which are embedded into the two side walls of the embedded housing 1. Metal foil strips 5 are soldered onto the power terminals and signal terminals, and are directly soldered to the corresponding circuit pads on the AMB substrate 3 through the metal foil strips 5, replacing the traditional bonding wires. This achieves an interconnection method that abandons the traditional reliance on bonding wires. The low-inductance, high-thermal-conductivity metal foil strips 5 are used to achieve electrical interconnection between terminal 6 and AMB substrate 3. The metal foil strips 5 not only have a larger cross-sectional area and shorter wiring path, significantly reducing parasitic inductance, but also have a fully welded structure that eliminates the problems of bonding wires being prone to falling off, breaking, and interface aging due to thermomechanical stress. This greatly improves the long-term reliability and stability of the module under high temperature, high power cycling, and vibration environments. At the same time, the integrated embedding of terminal 6 and embedded housing 1 enhances the mechanical strength and sealing performance of the overall structure. The metal foil strip 5 is connected in parallel with the low-inductance planar circuit. The DC+ and DC- terminals 6 are designed with a stacked common busbar. The two are closely parallel and the magnetic fields generated cancel each other out, thereby successfully reducing the overall parasitic inductance of the power circuit to 3-5nH. This greatly suppresses voltage overshoot, ringing and electromagnetic oscillation generated by the SiC power module during high-speed switching, and improves the switching efficiency, operating stability and electromagnetic compatibility (EMC) performance of the system. The drive pads on the circuit pattern are directly connected to the gate drive board via short-pitch spring pins, forming a low-inductance, high-response drive circuit. This design significantly shortens the drive signal path and effectively reduces the parasitic inductance and resistance of the drive circuit, thereby improving the control accuracy and dynamic performance of the SiC power module switching process. Due to the extremely short connection path of the spring pins, the electromagnetic coupling and noise interference of the high-power current circuit to the sensitive drive signal are greatly reduced, enhancing the electromagnetic compatibility (EMC) of the system and effectively preventing false triggering or drive instability caused by crosstalk. Assembly method of SiC power module: The thick copper layer 32 on the AMB substrate 3 is precision etched to form a functional circuit pattern consisting of an electrically isolated chip mounting area, drive pads, drive signal traces, power loops, and low-inductance planar circuits. The SiC chipset 4 uses a silver sintering process to fix the isolated chip mounting area on the circuit pattern, ensuring a robust and low-impedance electrical connection, while providing an excellent heat conduction path, enhancing the module's heat dissipation capacity and long-term reliability. The embedded housing 1 is integrally injection molded from high-performance engineering plastic and has several independent chambers designed inside it; One of the independent chambers is used to mount the heat sink 2, and the AMB substrate 3 is precisely positioned and installed by the positioning mechanism on the heat sink 2 to ensure good thermal contact and mechanical stability. Terminal 6 is embedded in the side wall of the embedded housing 1 in a stacked common busbar manner to achieve compact and efficient electrical lead-out. Each terminal is directly soldered to the circuit pattern through metal foil strip 5 and connected in parallel with the low inductance planar circuit in the circuit pattern, replacing the traditional bonding wire connection method, reducing parasitic inductance and improving current carrying capacity. A gate driver board is installed in an independent cavity on the upper side of the embedded housing 1. The driver board is directly soldered to the corresponding circuit pads on the circuit pattern through short-pitch spring pins to form a high-efficiency, low-inductance drive circuit. The SiC power module assembly was completed, achieving high integration, excellent electrical performance, efficient thermal management, and enhanced mechanical strength, meeting the requirements of modern power electronic systems for high efficiency, high reliability, and compact design.

[0027] This embodiment takes low inductance as an example, combined with the attached... Figure 1 Detailed Workflow: The workflow is as follows: The power electrodes of the SiC chipset 4 are connected in parallel through a low-inductance planar circuit integrated on the AMB substrate 3, combined with parallel-arranged metal foil strips 5; simultaneously, DC+ and DC... Terminal 6 adopts a stacked common busbar structure design, which makes the positive and negative conductors closely parallel and effectively utilizes the principle of mutual cancellation of the magnetic field generated by the reverse current. This significantly reduces the loop area of ​​the power circuit and successfully controls the overall parasitic inductance to an extremely low level of 3–5nH. This greatly suppresses voltage overshoot, ringing and electromagnetic oscillation generated by the SiC power module during high-speed switching, and improves the switching efficiency, operating stability and electromagnetic compatibility (EMC) performance of the system. The drive circuit, through the circuit pattern on the AMB substrate 3, directly connects to the gate drive board via spring pins to achieve low inductance and high reliability. This shortens the drive circuit path, effectively isolates the sensitive gate drive signal from the high-current power circuit, avoids electromagnetic coupling and noise interference between the two, and further ensures the precise control and long-term reliability of the SiC module under high-frequency and high-voltage conditions.

[0028] This embodiment takes a high-efficiency heat dissipation path as an example, combined with the attached... Figure 1 Detailed Workflow: The workflow is as follows: During operation, the heat generated by the SiC chipset 4 is dissipated through two paths: First, through the highly thermally conductive ceramic insulating layer in the AMB substrate 3, it is efficiently conducted to the heat sink 2. The heat sink fins on the heat sink 2 further enhance the heat dissipation efficiency. Second, as an upward auxiliary heat dissipation path, heat is transferred to the embedded housing 1 through the upper packaging material. This double-sided heat dissipation structure significantly shortens the heat conduction distance, effectively reduces the overall thermal resistance of the module from the chip junction area to the environment, improves the heat dissipation efficiency of the module, and enables the device to maintain a safe operating temperature even at higher power densities. At the same time, it slows down the accumulation of thermal stress and material aging, thereby significantly extending the service life and operational reliability of the power module.

[0029] This embodiment takes high reliability assurance as an example, combined with the attached... Figure 1 Detailed Workflow: The workflow is as follows: The embedded housing 1 and the AMB substrate 3 are integrated into a single structure through an embedded bonding process, forming a robust mechanical whole, which significantly improves the module's vibration and shock resistance and effectively copes with harsh industrial or automotive application environments. Meanwhile, the module abandons the traditional bonding wire connection method and instead adopts a silver sintering process to achieve electrical and mechanical connection between SiC chipset 4 and AMB substrate 3. This process forms a metallurgical bond between silver particles under high temperature and high pressure conditions, which not only has excellent electrical and thermal conductivity, but also has a high degree of matching of thermal expansion coefficients at the connection interface. This fundamentally eliminates failure modes such as easy detachment of traditional bonding wires, solder joint fatigue, and interface thermal resistance aging, and greatly improves the long-term reliability and service life of the module under high temperature and high power cycling conditions.

[0030] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A SiC power module with an embedded housing, characterized in that, include: An embedded housing (1) has several independent chambers arranged inside it; An AMB substrate (3) is disposed within the independent cavity, and a circuit pattern is etched on the AMB substrate (3); SiC chipset (4) is disposed on the circuit pattern; A metal foil strip (5) is disposed in the inner cavity of the embedded housing (1); Terminal (6) is soldered to the circuit pattern via metal foil strip (5); The circuit pattern is provided with a low-inductance planar circuit, so that the power electrode of the SiC chip group (4) is connected in parallel with the parallel metal foil strip (5) through the low-inductance planar circuit, and is embedded in the outside of the embedded shell (1) with the terminal (6) using a stacked common busbar structure. The magnetic fields generated by the two cancel each other out, suppressing the voltage overshoot generated by the SiC power module during high-speed switching.

2. The SiC power module with an embedded housing according to claim 1, characterized in that, The circuit pattern includes an isolated chip mounting area, driver pads, driver signal traces, and power loops.

3. The SiC power module with an embedded housing according to claim 2, characterized in that, The independent chamber located above the SiC chipset (4) is provided with a gate driving board, which is connected to the driving pads on the circuit pattern by short-pitch spring pins.

4. The SiC power module with an embedded housing according to claim 1, characterized in that, The bottom of the AMB substrate (3) is fixedly connected to a heat sink base (2), which is embedded in an independent cavity. The top of the heat sink base (2) is provided with a positioning mechanism for positioning and installing the AMB substrate (3). The bottom of the heat sink base (2) is provided with heat sink fins.

5. A SiC power module with an embedded housing according to claim 1, characterized in that, The AMB substrate (3) includes a substrate (31), and the upper and lower surfaces of the substrate (31) are covered with a thick copper layer (32). The upper thick copper layer (32) is formed into a functional circuit pattern by precision etching.

6. A SiC power module with an embedded housing according to claim 5, characterized in that, The substrate (31) is made of highly insulating aluminum nitride ceramic material.

7. A SiC power module with an embedded housing according to claim 2, characterized in that, The SiC chipset (4) is fixed to the isolated chip mounting area by a silver sintering process.

8. A SiC power module with an embedded housing according to claim 4, characterized in that, The heat dissipation base (2) is made of a high thermal conductivity metal material.

9. A SiC power module with an embedded housing according to claim 1, characterized in that, The embedded housing (1) is integrally injection molded from high-performance engineering plastic.

10. A method for assembling a SiC power module, utilizing a SiC power module with an embedded housing as described in any one of claims 1 to 9, characterized in that, Includes the following steps: Step 1: A functionalized circuit pattern is formed on the thick copper layer on the AMB substrate (3) by precision etching; Step 2: The SiC chipset (4) is fixed to the isolated chip mounting area on the circuit pattern by silver sintering process to achieve a robust low-resistance connection; Step 3: An embedded shell (1) is integrally injection molded from high-performance engineering plastic, and several independent chambers are designed inside the embedded shell (1); Step 4: Insert the heat sink base (2) into one of the independent chambers, and position and install the AMB substrate (3) using the positioning mechanism on the heat sink base (2); Step 5: Insert the terminal (6) into the side wall of the embedded housing (1) in a stacked common busbar structure, and then weld the terminal (6) to the circuit pattern through the metal foil strip (5) and connect it in parallel with the low inductance planar circuit on the circuit pattern; Step 6: Insert the gate driver board into the independent cavity located on the SiC chipset (4), and directly solder it to the corresponding circuit pad on the circuit pattern through short-pitch spring pins to complete the SiC power module assembly.

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