A semiconductor chamber leak detection system and method

Abstract

The application relates to a semiconductor chamber leakage detection system and method. The semiconductor chamber leakage detection system comprises a channel module, a laser emitter, a beam splitter, a laser pipeline, a pumping module and a detection module. The laser emitter emits laser into a laser channel. Part of the laser passes through the beam splitter to form first laser. The rest of the laser is reflected by the beam splitter to form second laser and enter a detection channel. The laser pipeline reflects the first laser to form third laser. The pumping module pumps the third laser. The detection module receives the second laser and the third laser to analyze and determine the leakage of the semiconductor chamber. The semiconductor chamber leakage detection method comprises the following steps: placing the gas cap of the laser pipeline at the detection point; collecting the signals of the first detector and the second detector and converting them into gas concentration value C; setting a standard value; comparing the gas concentration value C with the standard value to determine whether leakage occurs. The application can be effectively applied to the narrow space of semiconductor equipment and high-precision detection is realized.

Description

Technical Field

[0001] This invention relates to the field of semiconductor testing technology, and in particular to a semiconductor chamber leakage detection system and method. Background Technology

[0002] In semiconductor manufacturing, key processes such as etching (ETCH), chemical vapor deposition (CVD), and ion implantation all require the use of various high-purity, highly corrosive, or flammable and explosive specialty gases, such as chlorine, hydrogen fluoride, silane, or phosphine. These process gases are delivered to the process chamber through a sophisticated piping system, via valves, flanges, and other connecting components. Due to the highly integrated structure and extremely compact internal space of semiconductor equipment, and the presence of strong electromagnetic interference environments generated by plasma and high-frequency power supplies, extremely stringent requirements are placed on the airtightness of the gas delivery system. Even a minor gas leak can lead to the leakage of process gases within a short period of time, not only contaminating and scrapping the current batch of wafers but also potentially corroding expensive equipment components and causing safety accidents.

[0003] Currently, the commonly used gas leak detection methods in the industry are mainly electrochemical sensors or traditional optical detection technologies. While electrochemical sensors initially offer high sensitivity, their sensing elements are prone to irreversible chemical reactions upon contact with the target gas, resulting in a short lifespan and frequent replacements, increasing maintenance costs and downtime. Furthermore, in the complex environment of semiconductor equipment, electromagnetic interference, temperature and humidity fluctuations, or cross-interference from other coexisting gases can easily cause false alarms in electrochemical sensors, affecting the continuity and reliability of production. Traditional optical detection equipment based on principles such as infrared absorption or spectral analysis typically includes large light sources, spectroscopic modules, and long-path gas chambers, resulting in a bulky overall structure that is difficult to integrate into the space-constrained interiors of semiconductor equipment, especially unsuitable for real-time, in-situ monitoring of confined spaces such as valves and joints. In addition, the high cost of traditional optical systems limits their widespread application in multi-point distributed monitoring. Existing leak detection solutions struggle to achieve a balance between reliability, anti-interference capability, spatial adaptability, and cost, failing to meet the urgent needs of modern, increasingly advanced semiconductor manufacturing for online leak monitoring.

[0004] Therefore, it is necessary to provide a new semiconductor chamber leakage detection system and method to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0005] The technical problem to be solved by this application is how to provide a semiconductor chamber leakage detection system and method with high detection accuracy that can be adapted for use in semiconductor equipment in confined spaces.

[0006] To address the aforementioned technical problems, according to embodiments of this application, a semiconductor chamber leakage detection system is provided, comprising: a pathway module including a laser channel extending through the system in a first direction, a detection channel extending through the system in a second direction, and an extraction channel extending through the system in the second direction; the detection channel is connected to the laser channel to form a communicating cavity, and the extraction channel is connected to the laser channel and spaced apart from the detection channel; a laser emitter disposed at one end of the laser channel to emit laser light into the laser channel; a beam splitter disposed in the communicating cavity to allow a portion of the laser light to pass through the beam splitter to form a first laser light, and the remaining portion of the laser light to be reflected by the beam splitter to form a second laser light and enter the detection channel; a laser tube disposed at the other end of the laser channel, and the other end of the laser tube is used to reflect the first laser light to form a third laser light; an extraction module connected to the extraction channel for extracting gas so that gas enters the extraction channel through the end of the laser tube; and a detection module disposed at the end of the detection channel to receive the second laser light and the third laser light, for analysis and determination of the leakage status of the semiconductor chamber.

[0007] According to an embodiment of this application, the laser tube is a hollow optical fiber, and an air cap is provided at the end of the laser tube; the air cap is sleeved on the end of the laser tube and an air hole is opened on the side wall of the air cap so that gas enters the laser tube through the air hole.

[0008] According to an embodiment of this application, the air cap is provided with a reflector, which is used to reflect the first laser to form the third laser.

[0009] According to an embodiment of this application, the detection module includes a first detector and a second detector, which are respectively located at both ends of the detection channel. The first detector is used to receive the second laser, and the second detector is used to receive the third laser.

[0010] According to an embodiment of this application, the laser pipeline has multiple components, with one end of each laser pipeline connected to the laser channel and the other end placed at a different test point.

[0011] A semiconductor chamber leakage detection method is applied to the aforementioned semiconductor chamber leakage detection system. The semiconductor chamber leakage detection method includes the following steps: placing the gas cap of the laser pipeline at the test point; controlling the gas extraction module to extract gas, so that the gas at the test point enters the laser pipeline after passing through the gas cap; controlling the laser emitter to emit laser light; a second laser is received by the first detector of the detection module, and a third laser is received by the second detector of the detection module after being reflected by the beam splitter; acquiring the signals from the first detector and the second detector, and converting them into a gas concentration value C; setting a standard value; and comparing the gas concentration value C with the standard value to determine whether a leak has occurred.

[0012] According to an embodiment of this application, the step of acquiring the signals from the first detector and the second detector and converting them into a gas concentration value includes: acquiring the signal from the first detector to obtain a reference signal V1, and acquiring the signal from the second detector to obtain a measurement signal V2; calculating the ratio of the reference signal V1 to the measurement signal V2 to obtain a normalized absorption signal R; modulating the normalized absorption signal R to obtain a second harmonic peak value S; calibrating the sensitivity coefficient k; and obtaining the gas concentration value C based on the second harmonic peak value S and the sensitivity coefficient k, where C = S / k.

[0013] According to an embodiment of this application, the step of modulating the normalized absorption signal R to obtain the second harmonic peak value S includes superimposing a high-frequency sinusoidal modulation on the driving current of the laser emitter so that the instantaneous frequency of the laser satisfies the instantaneous frequency ν(t).

[0014] ;

[0015] in, The wavelength of the gas absorption peak; It is the angular frequency of the high-frequency sinusoidal modulation; The modulation amplitude is given by R(t), which is a function of the normalized absorption signal R changing with time. The function R(t) of the normalized absorption signal R changing with time is expanded by Fourier series, and the second harmonic component is extracted by narrowband through a lock-in amplifier to obtain the second harmonic peak value S.

[0016] According to an embodiment of this application, the calibration of the sensitivity coefficient k includes: modulating the laser emitter so that the wavelength of the laser corresponds to the wavelength of the gas absorption peak; introducing a gas of standard concentration C1 into the laser tube; obtaining the standard second harmonic peak value S1 corresponding to the gas of standard concentration C1; and calculating the sensitivity coefficient k based on the standard concentration C1 and the standard second harmonic peak value S1 to obtain k = S1 / C1.

[0017] According to an embodiment of this application, comparing the gas concentration value C with the standard value to determine whether a leak has occurred includes determining that a leak has occurred at the test point when the gas concentration value C is greater than or equal to the standard value; and determining that no leak has occurred at the test point when the gas concentration value C is less than the standard value.

[0018] By adopting the above technical solution, setting hollow optical fibers, and placing the ends of the hollow optical fibers at different test points, leakage detection can be performed at different test points to determine whether a leak has occurred. The gas cap at the end of the hollow optical fiber serves as both a gas sampling and a reflector, allowing the laser to pass through the extracted leaking gas and then return, increasing the laser's optical path and making the detection process more stable. This also meets the testing requirements of the confined space of the semiconductor equipment. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the main structure of a semiconductor chamber leakage detection system according to an embodiment of the present invention.

[0020] Figure 2 This is a schematic diagram illustrating the placement and structure of an air cap according to an embodiment of the present invention.

[0021] Figure 3 This is a step diagram of a semiconductor chamber leakage detection method according to an embodiment of the present invention.

[0022] Figure label:

[0023] 100, Pathway Module; 110, Laser Channel; 120, Detection Channel; 130, Air Extraction Channel; 200, Laser Emitter; 300, Beam Splitter; 400, Laser Pipeline; 410, Air Cap; 411, Air Hole; 412, Reflector; 500, Air Extraction Module; 610, First Detector; 620, Second Detector; 710, First Laser; 720, Second Laser; 730, Third Laser. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0025] The following is combined Figures 1-3 The specific embodiments of the present invention will be further described in detail below.

[0026] The present invention provides a semiconductor chamber leakage detection system and method. The semiconductor chamber leakage detection system is used to detect whether a leakage has occurred in a semiconductor chamber during wafer processing. The semiconductor chamber leakage detection method is applied to the semiconductor chamber leakage detection system to help determine whether a leakage has occurred in the semiconductor chamber. Specifically, the semiconductor chamber leakage detection system includes a path module 100, a laser emitter 200, a beam splitter 300, a laser pipeline 400, a vacuum module 500, and a detection module.

[0027] In some embodiments, the passage module 100 includes a laser channel 110 extending along a first direction, a detection channel 120 extending along a second direction, and an exhaust channel 130 extending along the second direction; the detection channel 120 communicates with the laser channel 110 and forms a communicating cavity, and the exhaust channel 130 communicates with the laser channel 110 and is spaced apart from the detection channel 120; specifically, the passage module 100 is block-shaped and has a length direction, a width direction, and a height direction; the passage module 100 has the laser channel 110, the detection channel 120, and the exhaust channel 130, wherein the laser channel 110 extends through the passage module 100 along the first direction, wherein the first direction can be parallel to the length direction, or parallel to the width direction or the height direction; here, the example is that the first direction is parallel to the length direction, that is, the laser channel 110 extends through the passage module 100 along the length direction of the passage module 100; The detection channel 120 extends through the passage module 100 along a second direction. This second direction is not parallel to the first direction; that is, the second direction can extend along the width or height direction, without limitation. The primary feature is that the detection channel 120 is connected to the laser channel 110. Simultaneously, the angle between the axis of the detection channel 120 and the axis of the laser channel 110 can be acute, obtuse, or right, without limitation. In this embodiment, a right angle is used as an example, meaning the laser channel 110 and the detection channel 120 are perpendicular to each other. The exhaust channel 130 can have the same or different orientation as the detection channel 120, without limitation. The primary feature is that the exhaust channel 130 is connected to the laser channel 110 while having a gap between them. Furthermore, a connecting cavity is formed at the connection point between the detection channel 120 and the laser channel 110 to facilitate the installation of the beam splitter 300.

[0028] In some specific embodiments, the beam splitter 300 is disposed within the communicating cavity. Its placement method can be adhesive, snap-fit, or other fixing methods; no specific limitation is made here, as long as the position of the beam splitter 300 within the communicating cavity does not move. The beam splitter 300 can separate the incident light into reflected light and transmitted light, which is well known to those skilled in the art and will not be elaborated here. By setting the beam splitter 300, a portion of the laser light passes through the beam splitter 300 to form the first laser 710, while the remaining portion of the laser light is reflected by the beam splitter 300 to form the second laser 720, which then enters the detection channel 120.

[0029] In some specific embodiments, the laser emitter 200 is located at one end of the laser channel 110. The laser emitter 200 can be attached, snapped, or fixed in other ways. No specific method is limited here. The main point is that the relative position of the laser emitter 200 and the laser channel 110 will not change. The laser emitter 200 is used to emit laser into the laser channel 110 so that part of the laser passes through the beam splitter 300 to form the first laser 710, and the remaining part of the laser is reflected by the beam splitter 300 to form the second laser 720 and enter the detection channel 120. In addition, the laser tube 400 is located at the other end of the laser channel 110. Its installation method can be adhesive, snap-fit, or other fixing methods; no specific restrictions are imposed here, as long as the relative position of the laser tube 400 and the laser channel 110 remains unchanged. The other end of the laser tube 400 is used to reflect the first laser 710 to form the third laser 730. That is, the second laser 720 passes through the laser channel 110 and enters the laser tube 400, and is reflected by the end of the laser tube 400 to form the third laser 730. The third laser 730 continues to illuminate the beam splitter 300 and is reflected by the beam splitter 300. The detection module is located at the end of the detection channel 120 to receive the second laser 720 and the third laser 730 for analysis and assessment of leakage in the semiconductor chamber.

[0030] In some more specific embodiments, the extraction module 500 is connected to the extraction channel 130 and is used to extract gas so that the gas enters the extraction channel 130 through the end of the laser tube 400. During the detection process, the end of the laser tube 400 is placed at the test point, and the extraction module 500 is activated so that the gas at the test point enters the laser tube 400 through the end of the laser tube 400, passes through the laser tube 400 and part of the laser channel 110 in sequence, and enters the extraction channel 130 and is extracted. During this process, the gas absorbs the energy of the laser, thereby changing the energy of the laser. Therefore, the detection module can determine whether a leak has occurred at the test point by analyzing the energy changes of the second laser 720 and the third laser 730.

[0031] In some embodiments, the laser tube 400 is a hollow optical fiber. Specifically, in order to accommodate long optical paths and allow gas passage, and to place its end within millimeter-level gaps in semiconductor devices, the laser tube 400 is chosen to be a hollow optical fiber. More specifically, to facilitate gas entry into the laser tube 400, a gas cap 410 is provided at the end of the laser tube. The gas cap 410 is fitted onto the end of the laser tube 400, and the sidewall of the gas cap 410 has an air hole 411, so that gas can enter the laser tube 400 through the air hole 411. This reduces the possibility that the end of the laser tube 400 will be blocked when the foundation of the laser tube 400 is against the sidewall of the semiconductor device. By placing the air hole 411 on the sidewall of the gas cap 410, the possibility of the air hole 411 being blocked is reduced.

[0032] In some specific embodiments, in order to facilitate the re-reflection of the laser passing through the beam splitter 300 back to the beam splitter 300, a reflector 412 is provided inside the air cap 410. The reflector 412 is located at the end inside the air cap 410 so that when the first laser 710 irradiates the reflector 412, the first laser 710 is reflected to form the third laser 730. That is, the reflector 412 is used to reflect the first laser 710 to form the third laser 730.

[0033] In some specific embodiments, to detect the second laser 720 and the third laser 730, a detection module is provided, including a first detector 610 and a second detector 620. The first detector 610 and the second detector 620 are respectively located at opposite ends of the detection channel 120 and connected to the detection channel 120 via optical fiber. The first detector 610 is used to receive the second laser 720, and the second detector 620 is used to receive the third laser 730. Specifically, the first detector 610 receives the second laser 720, which does not absorb gas; therefore, the laser signal of the second laser 720 is used as a reference signal. The second detector 620 receives the third laser 730, which absorbs gas; therefore, the laser signal of the third laser 730 is used as a detection signal. The detection signal and the reference signal are analyzed to determine whether a leak has occurred at the test point.

[0034] In some specific embodiments, in order to detect multiple test points, multiple laser tubes 400 are provided. One end of each laser tube 400 is connected to the laser channel 110, and the other end is placed at different test points. During the detection process, one laser tube 400 is turned on while the others are turned off, thereby detecting whether the corresponding test point has been obliquely cut. A hollow fiber optic switch can be provided on each laser tube 400 to control the on / off state of the corresponding laser tube 400. This is known to those skilled in the art and will not be described in detail here.

[0035] This application also discloses a semiconductor chamber leakage detection method, which is applied to the above-mentioned semiconductor chamber leakage detection system. Specifically, the semiconductor chamber leakage detection method includes the following steps;

[0036] S1. Place the gas cap 410 of the laser tube 400 at the test point. Specifically, during the test, first place the gas cap 410 of the laser tube 400 at the test point so that the gas at the test point can enter the laser tube 400 from the gas cap 410 during the subsequent test, thereby facilitating the detection of whether there is a leak at the test point.

[0037] S2. Control the gas extraction module 500 to extract gas, so that the gas at the test point enters the laser tube 400 after passing through the gas cap 410. Specifically, during the detection process, the gas extraction module 500 is activated, so that the gas at the test point enters the laser tube 400 after passing through the air hole 411 on the side wall of the gas cap 410. The gas extraction module 500 can be a micro diaphragm pump or other device capable of gas extraction. There are no specific restrictions here, as long as it can extract the gas at the test point into the laser tube 400.

[0038] S3. Control the laser emitter 200 to emit a laser; the second laser 720 is received by the first detector 610 of the detection module, and the third laser 730 is reflected by the beam splitter 300 and then received by the second detector 620 of the detection module; specifically, during the detection process, when the gas at the test point can be stably extracted by the extraction module 500 and moves from the gas cap 410 to the extraction module 500, control the laser emitter 200 to emit a laser. When the laser irradiates the beam splitter 300, part of the laser passes through the beam splitter 300 and becomes the first laser 710. The first laser 710 continues to irradiate along the laser channel 110 until it enters the laser tube 400 and is reflected by the reflector 412 to form the third laser 730. 30. The third laser 730 returns along the original path and illuminates the beam splitter 300. It is then reflected by the beam splitter 300 and enters the branch channel corresponding to the detection channel 120 and the second detector 620, so that the second detector 620 can receive the third laser 730 and obtain its signal. When the laser illuminates the beam splitter 300, the remaining part of the laser is reflected by the beam splitter 300 to form the second laser 720. The second laser 720 enters the branch channel corresponding to the detection channel 120 and the first detector 610, so that the first detector 610 can receive the second laser 720 and obtain its signal for subsequent detection.

[0039] S4. Acquire the signals from the first detector 610 and the second detector 620, and convert them into a gas concentration value C. Specifically, during the detection process, it is necessary to acquire the signals from the first detector 610 and the second detector 620, and convert the signals into a gas concentration value, so as to facilitate subsequent judgment on whether a leak has occurred at the test point. More specifically, during the detection process, the wavelength of the laser is modulated to the center absorption line of the corresponding target gas. Therefore, through the processing of the signals from the first detector 610 and the second detector 620, the concentration value C of the corresponding target gas can be detected.

[0040] S5. Set a standard value; Specifically, in the process of determining whether a leak has occurred at the test point, it is necessary to set a judgment standard, that is, set a standard value, so as to facilitate the subsequent judgment process.

[0041] S6. Compare the gas concentration value C with the standard value to determine whether a leak has occurred; specifically, after setting the standard value, compare the gas concentration value C with the standard value to determine whether a leak has occurred at the corresponding test point.

[0042] In some embodiments, acquiring signals from the first detector 610 and the second detector 620 and converting them into gas concentration values ​​includes: acquiring a reference signal V1 from the first detector 610 and a measurement signal V2 from the second detector 620; calculating the ratio of the reference signal V1 to the measurement signal V2 to obtain a normalized absorption signal R; modulating the normalized absorption signal R to obtain the second harmonic peak value S; calibrating the sensitivity coefficient k; and obtaining the gas concentration value C based on the second harmonic peak value S and the sensitivity coefficient k, where C = S / k.

[0043] In some specific embodiments, during signal acquisition, the photodiode of the first detector 610 converts the optical power of the second laser 720 into a photocurrent, which is then converted into a voltage linearly corresponding to the power by a transimpedance amplifier. Therefore, all subsequent ratio, phase-locked loop, and calibration steps directly operate on this voltage. The acquisition principle of the second detector 620 is the same as that of the first detector 610, and will not be elaborated here. The reference signal V1 includes the laser's own power fluctuations; while the measurement signal V2 includes both attenuation caused by gas absorption and laser power fluctuations similar to those in the reference optical path. After obtaining the reference signal V1 and the measurement signal V2, the ratio of the reference signal V1 to the measurement signal V2 is calculated to obtain the normalized absorption signal R, i.e., R = V2 / V1, thereby eliminating noise sources caused by laser power fluctuations and improving the stability of the reference signal V1 and the measurement signal V2.

[0044] In some more specific embodiments, after obtaining the normalized absorption signal R, it is also necessary to modulate the normalized absorption signal R to obtain the second harmonic peak value S. Specifically, modulating the normalized absorption signal R to obtain the second harmonic peak value S includes superimposing a high-frequency sinusoidal modulation on the driving current of the laser emitter 200 so that the instantaneous frequency of the laser satisfies the instantaneous frequency ν(t).

[0045] ;

[0046] in, The wavelength of the gas absorption peak; It is the angular frequency of the high-frequency sinusoidal modulation; Modulation amplitude;

[0047] The normalized absorption signal R is a function of time, R(t). The function R(t) of the normalized absorption signal R is expanded by Fourier series, and the second harmonic component is extracted by narrowband through a lock-in amplifier to obtain the second harmonic peak value S.

[0048] In some specific embodiments, a high-frequency sinusoidal modulation is superimposed on the driving current of the laser emitter 200, so that the instantaneous frequency of the laser swings rapidly with the sinusoidal wave, thereby making the instantaneous frequency of the laser satisfy the instantaneous frequency ν(t).

[0049] ;

[0050] in, The wavelength of the gas absorption peak; It is the angular frequency of the high-frequency sinusoidal modulation; The modulation amplitude is used; simultaneously, as the driving current of the laser emitter 200 is modulated, the instantaneous frequency of the laser oscillates periodically, causing the value of the normalized absorption signal R to change over time and form a function R(t), the variation of which is determined by the gas absorption curve (usually a Voigt curve). The function R(t) is expanded using a Fourier series, and harmonic components are generated at the harmonics of the modulation frequency. The amplitude of the second harmonic component is then precisely extracted using a lock-in amplifier, i.e., the second harmonic component is extracted, thus obtaining the second harmonic peak value S. The extraction of the second harmonic component's amplitude is crucial because in the baseline region without gas absorption, the transmittance spectrum is flat, and even harmonics are not generated. Therefore, the amplitude of the second harmonic component can effectively suppress slowly changing background interference caused by particulate scattering, optical window contamination, etc.

[0051] In some specific embodiments, in order to obtain the gas concentration value C, it is also necessary to calibrate the sensitivity coefficient k. Specifically, calibrating the sensitivity coefficient k includes: modulating the laser emitter 200 so that the wavelength of the laser corresponds to the wavelength of the gas absorption peak; introducing a gas of standard concentration C1 into the laser tube 400; obtaining the standard second harmonic peak value S1 corresponding to the gas of standard concentration C1; and calculating the sensitivity coefficient k based on the standard concentration C1 and the standard second harmonic peak value S1, obtaining k = S1 / C1. The steps for calibrating the sensitivity coefficient k partially overlap with those for obtaining the gas concentration value C, and will not be elaborated here. The difference lies in the fact that, during the calibration process, the gas introduced is a gas with a standard concentration C1. The specific concentration can be set according to requirements, and will not be elaborated here. Since the concentration of the gas introduced at this time is considered to be the standard concentration C1, other relevant parameters obtained based on the standard concentration C1 are all parameters used as control groups for comparison. That is, the sensitivity coefficient k can be obtained based on the standard concentration C1 and the standard second harmonic peak value S1. After obtaining the sensitivity coefficient k, it is substituted into the calculation formula C=S / k for obtaining the gas concentration value C, thereby obtaining the gas concentration value C at the corresponding test point during the detection process.

[0052] In some embodiments, the standard value is set according to different devices during the actual testing process, and no restrictions are imposed here.

[0053] In some embodiments, the process of comparing the gas concentration value C with a standard value to determine whether a leak has occurred includes determining that a leak has occurred at the test point when the gas concentration value C is greater than or equal to the standard value, and determining that no leak has occurred at the test point when the gas concentration value C is less than the standard value.

[0054] The implementation principle of the semiconductor chamber leakage detection system and method in this application embodiment is as follows: by setting a hollow optical fiber and placing the ends of the hollow optical fiber at different test points, leakage detection can be performed at different test points to determine whether a leakage has occurred. The gas cap 410 at the end of the hollow optical fiber serves as both a gas sampling device and a reflector 412, allowing the laser to pass back and forth through the extracted leakage gas and then return, increasing the optical path of the laser and making the detection process more stable. At the same time, it is suitable for the detection needs of the narrow space of semiconductor equipment.

[0055] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor chamber leakage detection system, characterized in that, include: The pathway module includes a laser channel extending through the device along a first direction, a detection channel extending through the device along a second direction, and an air extraction channel extending along the second direction. The detection channel is connected to the laser channel and forms a connecting cavity; the air extraction channel is connected to the laser channel and is spaced apart from the detection channel. A laser emitter is located at one end of the laser channel to emit laser light into the laser channel; A beam splitter is disposed in the communicating cavity so that a portion of the laser light passes through the beam splitter to form a first laser light, and the remaining portion of the laser light is reflected by the beam splitter to form a second laser light and enter the detection channel. A laser tube is located at the other end of the laser channel; the laser tube is a hollow optical fiber, and an air cap is provided at the end of the laser tube; the air cap is fitted onto the end of the laser tube, and an air hole is opened on the side wall of the air cap to allow gas to enter the laser tube through the air hole; a reflector is provided inside the air cap, and the reflector is used to reflect the first laser to form a third laser; the laser signal of the second laser is used as a reference signal, and the laser signal of the third laser is used as a detection signal. The detection signal and the reference signal are analyzed to determine whether a leak has occurred; An air extraction module, connected to the air extraction channel, is used to extract air so that gas enters the air extraction channel through the end of the laser tube. A detection module is located at the end of the detection channel to receive the second laser and the third laser, so as to analyze and determine the leakage of the semiconductor chamber.

2. The semiconductor chamber leakage detection system according to claim 1, characterized in that, The detection module includes a first detector and a second detector, which are respectively located at both ends of the detection channel. The first detector is used to receive the second laser, and the second detector is used to receive the third laser.

3. The semiconductor chamber leakage detection system according to claim 1, characterized in that, The laser pipeline has multiple laser lines, with one end of each laser pipeline connected to the laser channel and the other end placed at a different test point.

4. A method for detecting leakage in a semiconductor chamber, characterized in that, Applied to the semiconductor chamber leakage detection system according to any one of claims 1-3, the semiconductor chamber leakage detection method includes the following steps. Place the gas cap of the laser tube at the point to be tested; The gas extraction module is controlled to extract gas, so that the gas at the test point enters the laser tube after passing through the gas cap; The laser emitter is controlled to emit a laser; the second laser is received by the first detector of the detection module, and the third laser is reflected by the beam splitter and received by the second detector of the detection module. The signals from the first detector and the second detector are collected and converted into a gas concentration value C; Set standard values; The gas concentration value C is compared with the standard value to determine whether a leak has occurred.

5. The semiconductor chamber leakage detection method according to claim 4, characterized in that, The process involves collecting signals from the first detector and the second detector, and converting them into gas concentration values, including... The reference signal V1 is obtained by collecting the signal from the first detector, and the measurement signal V2 is obtained by collecting the signal from the second detector. Calculate the ratio of the reference signal V1 to the measurement signal V2 to obtain the normalized absorption signal R; The normalized absorption signal R is modulated to obtain the second harmonic peak value S; Calibrate the sensitivity coefficient k; The gas concentration value C is obtained based on the second harmonic peak value S and the sensitivity coefficient k, where C = S / k.

6. The semiconductor chamber leakage detection method according to claim 5, characterized in that, The step of modulating the normalized absorption signal R to obtain the second harmonic peak value S includes, A high-frequency sinusoidal modulation is superimposed on the driving current of the laser emitter so that the instantaneous frequency of the laser satisfies the following condition: in, The wavelength of the gas absorption peak; It is the angular frequency of the high-frequency sinusoidal modulation; Modulation amplitude; The normalized absorption signal R is a function of time, R(t). The function R(t) of the normalized absorption signal R is expanded by Fourier series, and the second harmonic component is extracted by narrowband lock-in amplifier to obtain the second harmonic peak value S.

7. The semiconductor chamber leakage detection method according to claim 5, characterized in that, The calibration sensitivity coefficient k includes, The laser emitter is modulated so that the wavelength of the laser corresponds to the wavelength of the gas absorption peak; Gas of standard concentration C1 is introduced into the laser pipeline; Obtain the standard second harmonic peak value S1 corresponding to the gas with the standard concentration C1; The sensitivity coefficient k is calculated based on the standard concentration C1 and the standard second harmonic peak value S1, resulting in k = S1 / C1.

8. The semiconductor chamber leakage detection method according to claim 4, characterized in that, The gas concentration value C is compared with the standard value to determine whether a leak has occurred. include, When the gas concentration value C is greater than or equal to the standard value, it is determined that a leak has occurred at the test point; When the gas concentration value C is less than the standard value, it is determined that no leakage has occurred at the test point.

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