Directional ion beam control device and method and semiconductor equipment

By combining the screen gate, accelerating gate, and piezoelectric actuator, and integrating the accelerating electric field and the deflecting electric field, the problem of precise control in existing ion beam directing devices is solved, enabling flexible directional projection of the ion beam and improving the removal effect of process by-products and equipment stability.

CN121617883APending Publication Date: 2026-03-06PIOTECH (SHANGHAI) CO LTD
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Patent Information

Application Number
CN202511862093.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-10
Publication Date
2026-03-06

AI Technical Summary

Technical Problem

Existing ion beam orientation devices are difficult to adjust the ion beam emission direction flexibly, which cannot meet the orientation control requirements in multiple scenarios, resulting in poor removal of process by-products.

Method used

The system employs a combination structure of a screen gate, an accelerating gate, and a piezoelectric actuator. It uses an accelerating electric field and a deflecting electric field to directionally control the ion beam. Combined with the piezoelectric actuator and deflecting electrode assembly, it achieves secondary deflection of the ion beam, ensuring that the ion beam is accurately projected to the target position.

Benefits of technology

It achieves flexible and precise directional control of the ion beam, improves the cleaning effect of process byproducts at specific locations, and enhances the stable operation of the equipment.

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Abstract

The invention relates to a directional ion beam control device and method and semiconductor equipment, and the device comprises a screen grid electrode and an acceleration grid electrode which are arranged in parallel, and are respectively provided with a corresponding hole array for an ion beam to pass through; and at least one piezoelectric driver is arranged between the two grids and is used for changing the initial direction of the ion beam emitted from the accelerating grid hole, so that the ion beam is projected to a target position. The control method comprises the following steps: enabling the ion beam to sequentially pass through the screen gate hole and the acceleration gate hole, and changing the initial direction of the ion beam emitted from the acceleration gate hole between the two gates, so as to carry out directional control on the ion beam and project the ion beam to a target position. In the semiconductor equipment, the control device can be used for directionally controlling an ion beam, so that the ion beam is projected to a target position, and directional cleaning of a pressure control butterfly valve connected downstream is realized. Therefore, vector deflection control over the ion beam is achieved, the ion beam is precisely projected towards the target position in a directional mode, and the cleaning effect on the specific position of equipment is improved.
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