Directional ion beam control device and method and semiconductor equipment

Abstract

The invention relates to a directional ion beam control device and method and semiconductor equipment, and the device comprises a screen grid electrode and an acceleration grid electrode which are arranged in parallel, and are respectively provided with a corresponding hole array for an ion beam to pass through; and at least one piezoelectric driver is arranged between the two grids and is used for changing the initial direction of the ion beam emitted from the accelerating grid hole, so that the ion beam is projected to a target position. The control method comprises the following steps: enabling the ion beam to sequentially pass through the screen gate hole and the acceleration gate hole, and changing the initial direction of the ion beam emitted from the acceleration gate hole between the two gates, so as to carry out directional control on the ion beam and project the ion beam to a target position. In the semiconductor equipment, the control device can be used for directionally controlling an ion beam, so that the ion beam is projected to a target position, and directional cleaning of a pressure control butterfly valve connected downstream is realized. Therefore, vector deflection control over the ion beam is achieved, the ion beam is precisely projected towards the target position in a directional mode, and the cleaning effect on the specific position of equipment is improved.

Description

Technical Field

[0001] This application relates primarily to the field of semiconductor process technology, and in particular to a control device, method, and semiconductor equipment for a directional ion beam. Background Technology

[0002] In fields such as semiconductor manufacturing and materials processing, the directional control of ion beams is crucial for achieving precise operations, such as removing process byproducts and modifying materials. Existing ion beam directing devices are limited by installation space and structural design, making it difficult to flexibly adjust the ion beam emission direction to accurately project it to the target location, thus failing to meet the directional control requirements in various scenarios. Summary of the Invention

[0003] One objective of this application is to provide a control device, method, and semiconductor device for directional ion beams, thereby addressing the problem that directional control of ion beams is difficult to achieve with flexibility and precision in the prior art.

[0004] According to one aspect of this application, a control device for a directional ion beam is provided, comprising: a screen gate, an accelerating gate, and at least one piezoelectric actuator; the screen gate is provided with a plurality of screen gate holes for an ion beam to be injected through the plurality of screen gate holes; the accelerating gate is disposed parallel to the screen gate and is provided with the same number of accelerating gate holes as the plurality of screen gate holes for the ion beam to be emitted from the accelerating gate holes; the at least one piezoelectric actuator is disposed between the screen gate and the accelerating gate and is used to change the initial direction of the ion beam emitted from the accelerating gate holes to directionally control the ion beam so that the ion beam is projected to a target position.

[0005] Optionally, the control device includes a deflection electrode group disposed downstream of the acceleration gate, used to deflect the ion beam a second time by a deflection electric field, so as to further directionally control the ion beam and project the ion beam to the target position.

[0006] Optionally, the deflection electrode group includes a vertical deflection electrode group and a horizontal deflection electrode group, which are orthogonally arranged. A deflection electric field is generated by applying a voltage to achieve omnidirectional deflection of the ion beam.

[0007] Optionally, the screen gate is used to apply a positive potential, and the acceleration gate is used to apply a negative potential to form an acceleration electric field between the screen gate and the acceleration gate.

[0008] Optionally, the diameters of the screen gate aperture and the acceleration gate aperture are 0.5mm to 2mm, and the diameter of the screen gate aperture is greater than or equal to the diameter of the acceleration gate aperture.

[0009] Optionally, the at least one piezoelectric actuator is circumferentially and evenly spaced at angles along the distribution direction of the screen gate and the acceleration gate.

[0010] According to another aspect of this application, a method for controlling a directional ion beam is also provided, the method comprising: injecting an ion beam into a plurality of screen gate holes of the screen gate; when the ion beam enters between the screen gate and the accelerating gate, changing the initial direction of the ion beam exiting from the accelerating gate holes to directionally control the ion beam so that the ion beam is projected to a target position.

[0011] Optionally, the method further includes: deflecting the ion beam emitted from the acceleration gate aperture a second time by using a deflection electric field to further directionally control the ion beam so that the ion beam is projected to the target position.

[0012] Optionally, changing the initial direction of the ion beam exiting from the acceleration gate aperture when the ion beam enters between the screen gate and the acceleration gate includes: generating a displacement along a plane parallel to the screen gate and the acceleration gate by applying a voltage, causing the screen gate aperture and the acceleration gate aperture to also be displaced; and based on the displacement generated by the screen gate aperture and the acceleration gate aperture, the accelerating electric field between the two apertures is directionally shifted to change the initial direction of the ion beam exiting from the acceleration gate aperture.

[0013] Optionally, the deflection electric field includes a vertical deflection electric field and a horizontal deflection electric field. The secondary deflection of the ion beam emitted from the accelerating gate aperture by the deflection electric field includes: deflecting the ion beam vertically by the vertical deflection electric field, deflecting the ion beam horizontally by the horizontal deflection electric field, and superimposing the vertical and horizontal deflections to achieve secondary deflection of the ion beam emitted from the accelerating gate aperture.

[0014] According to another aspect of this application, a computer-readable medium is also provided, on which computer instructions are stored, which can be executed by a processor to implement the steps of any of the methods described above.

[0015] According to another aspect of this application, a semiconductor device is also provided, comprising: a process chamber, a front-end conduit, an ion beam source device, a pressure-controlled butterfly valve, and a control device for the aforementioned directional ion beam; the front-end conduit is disposed between the process chamber and the ion beam source device for conveying process gas in the process chamber to the ion beam source device; the ion beam source device is disposed at the front end of the screen grid for dissociating the process gas to generate an ion beam; the control device is used to directionally control the ion beam, so that the ion beam is projected to a target position to achieve directional cleaning of the downstream pressure-controlled butterfly valve.

[0016] Compared with the prior art, this application causes the ion beam to generate vector deflection, which can realize the ion beam directional control. When cleaning specific locations of equipment, the controlled ion beam can be used to achieve precise projection towards specific locations, increase the local concentration of free radicals at specific locations, and thus improve the cleaning effect on specific locations of equipment. Attached Figure Description

[0017] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings, wherein:

[0018] Figure 1 A schematic diagram of a control device for a directional ion beam according to one aspect of this application is shown.

[0019] Figure 2 This diagram illustrates a schematic of an accelerating electric field formed by the screen gate and the accelerating gate in one embodiment of this application.

[0020] Figure 3 This diagram shows a structural schematic of a piezoelectric actuator according to an embodiment of this application;

[0021] Figure 4 This diagram shows a schematic representation of the deflection electrode assembly in one embodiment of this application.

[0022] Figure 5 This illustration shows a structural schematic diagram of a vertical deflection electrode group and a horizontal deflection electrode group in one embodiment of this application;

[0023] Figure 6 A schematic flowchart of a method for controlling a directional ion beam according to another aspect of this application is shown.

[0024] Figure 7 This diagram illustrates the initial deflection of the ion beam by an accelerating electric field in one embodiment of this application.

[0025] Figure 8 This diagram illustrates a secondary deflection of the ion beam by a deflecting electric field in one embodiment of this application.

[0026] Figure 9 A schematic diagram of the structure of a semiconductor device provided according to another aspect of this application is shown;

[0027] The same or similar reference numerals in the accompanying drawings represent the same or similar parts. Detailed Implementation

[0028] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0029] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein, and therefore this application is not limited to the specific embodiments disclosed below.

[0030] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0031] Furthermore, the terms “up,” “down,” “left,” “right,” “top,” “bottom,” “horizontal,” and “vertical” used in the following description should be understood as the orientations shown in the paragraph and related figures. This relative terminology is for illustrative purposes only and does not imply that the described device must be manufactured or operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0032] It is understood that although terms such as “first,” “second,” “third,” etc., may be used here to describe various pipes, channels, components, areas, layers, and / or parts, these components, areas, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different pipes, channels, components, areas, layers, and / or parts.

[0033] In semiconductor chip manufacturing, the amorphous carbon hard mask (ACHM) process is a key auxiliary process for achieving nanoscale circuit pattern transfer, but it generates process byproducts. These byproducts tend to accumulate on the surfaces of components with high flow resistance, especially on the inner walls and control valve plates of the throttle valve (TV) connected to the foreline, leading to obstructed fluid flow and byproduct accumulation.

[0034] Currently, the mainstream and effective cleaning method for byproducts involves connecting a plasma generator upstream of the TV. This generator dissociates oxygen to produce highly reactive free radicals, which then decompose and remove byproducts from the TV's inner wall and pressure control valve plate through oxidation. The core factors affecting the cleaning effect are the oxygen molecule dissociation rate and the local concentration of the generated free radicals in the area to be cleaned. The higher the free radical concentration, the higher the efficiency of oxidizing and decomposing byproducts, and the better the cleaning effect.

[0035] However, due to limitations imposed by the diameter, length, and maintenance space of the upstream pipeline, existing solutions restrict the flow of dissociated gas along the pipeline, resulting in random and non-directional flow. This makes it difficult to precisely control the local concentration of free radicals in the area to be cleaned, especially at specific deposition locations on the inner wall of the TV and the pressure control valve plate. Consequently, ACHM process byproducts at these critical locations cannot be completely removed, affecting the cleaning effect and the stable operation of the equipment. Therefore, this application provides a directional ion beam control device, method, and semiconductor equipment to solve the aforementioned technical problems.

[0036] Figure 1 The diagram illustrates a structural schematic of a directional ion beam control device according to one aspect of this application. The device includes: a screen gate 10, an accelerating gate 20, and at least one piezoelectric actuator 30. The screen gate 10 has a plurality of screen gate holes 101 for the ion beam to enter through the plurality of screen gate holes. The accelerating gate 20 is arranged parallel to the screen gate 10 and has the same number of accelerating gate holes 201 as the plurality of screen gate holes for the ion beam to exit through the accelerating gate holes. The at least one piezoelectric actuator 30 is disposed between the screen gate 10 and the accelerating gate 20, and is used to change the initial direction of the ion beam exiting from the accelerating gate holes 201, thereby directionally controlling the ion beam and projecting it to a target position.

[0037] The directional ion beam control device enables the ion beam to be projected onto the target location in a preset direction. Specifically, the ion beam from the ion beam source first enters the device through the screen grid aperture 101. The accelerating grid 20 is set parallel to the screen grid 10, and the accelerating grid apertures 201 on it are the same in number and position as the screen grid apertures 101. This provides acceleration for the passing ion beam and, through the accelerating grid apertures 201 corresponding to the screen grid apertures 101, provides a channel for the directional control of the ion beam.

[0038] The piezoelectric actuator 30 is installed in the gap between the screen gate 10 and the accelerating gate 20. By applying a voltage, it can indirectly change the local electric field distribution between the screen gate 10 and the accelerating gate 20, thereby changing the relative position of the gates and adjusting the initial emission direction of the ion beam passing through the corresponding gate aperture. For example, it can cause the ion beam to be shifted to the left, right, or precisely aligned with the target position, thereby achieving directional control of the ion beam and ensuring that the emitted ion beam can be accurately projected to the preset target position.

[0039] In one embodiment of this application, the screen gate 10 is used to apply a positive potential, and the acceleration gate 20 is used to apply a negative potential to form an acceleration electric field between the screen gate 10 and the acceleration gate 20.

[0040] exist Figure 2In the illustrated embodiment, opposite potentials are applied to the screen gate 10 and the accelerating gate 20, with the screen gate 10 receiving a positive potential and the accelerating gate 20 receiving a negative potential. The interaction of positive and negative charges provides the power for the directional acceleration of the ion beam. In practical applications, a positive potential, typically several hundred to several thousand volts (e.g., +1200V), is applied to the screen gate 10; a negative potential, typically several hundred to several thousand volts (e.g., -300V), is applied to the accelerating gate 20. A stable accelerating electric field is formed between the two gates, with the field direction pointing from the positively charged screen gate to the negatively charged accelerating gate.

[0041] For cations, such as Figure 2 O cations in + The cations are subjected to the repulsive force of the gate 10 and the attractive force of the accelerating gate 20. Under the action of the electric field, they accelerate along the direction of the electric field and are eventually emitted from the accelerating gate holes that correspond one-to-one with the gate holes. Since the two gates are set in parallel and the gate holes are precisely aligned, the distribution of the accelerating electric field is consistent with the axial direction of the gate holes. Therefore, the movement direction of the cations is basically constrained on the common axis of the two gate holes, which facilitates precise orientation by subsequent piezoelectric actuators.

[0042] In one embodiment of this application, the diameters of the screen gate aperture and the acceleration gate aperture are 0.5mm to 2mm, and the diameter of the screen gate aperture is greater than or equal to the diameter of the acceleration gate aperture.

[0043] Taking into account the beam current density, accelerating electric field strength, and fabrication feasibility, the diameters of the screen gate aperture 101 and the accelerating gate aperture 201 range from 0.5 mm to 2 mm. The screen gate 10 and accelerating gate 20 are initially parallel and concentric, with the corresponding gate apertures precisely concentrically aligned. The diameter of the screen gate aperture is greater than or equal to that of the accelerating gate aperture because the screen gate 10, as the ion beam incident end, has a larger aperture, which reduces the probability of beam obstruction and increases beam current throughput. Conversely, the accelerating gate 20, as the accelerating exit end of the ion beam, has an equal or smaller aperture, which constrains the ion beam accelerated by the accelerating electric field, thereby reducing beam divergence.

[0044] In one embodiment of this application, the at least one piezoelectric driver 30 is circumferentially and evenly spaced at angles along the distribution direction of the screen gate 10 and the acceleration gate 20.

[0045] The distribution direction along the gate 10 and the accelerating gate 20 refers to the arrangement of at least one piezoelectric actuator 30 in a ring-shaped circular pattern within the gap between the two gates, with the line connecting the centers of the two gates as the axis. Figure 3In the embodiment shown, four piezoelectric actuators are arranged in a circular pattern at 90-degree intervals in the gap space between the two gates. Alternatively, the piezoelectric actuators can be arranged in various ways, such as three 120-degree intervals or six 60-degree intervals, to ensure the symmetrical distribution of the driving force, depending on the control accuracy requirements.

[0046] The use of a uniformly distributed circumferential distribution ensures that the forces applied by the piezoelectric actuators 30 to the screen gate and accelerating gate are balanced, preventing uneven local forces that could lead to gate deformation or inconsistent offset. For example, when the four pressure actuators apply the same voltage, they will produce displacements of equal magnitude parallel to the gate plane, thereby causing the initially concentrically aligned screen gate and accelerating gate to shift as a whole. This transforms the corresponding gate apertures from a concentric state to a precisely controllable eccentric state, and the direction and amount of eccentricity can be precisely adjusted via voltage parameters.

[0047] In one embodiment of this application, the control device includes a deflection electrode group 40 disposed downstream of the acceleration gate 20, which is used to deflect the ion beam a second time by a deflection electric field to further directionally control the ion beam so that the ion beam is projected to the target position.

[0048] exist Figure 4 In the illustrated embodiment, the deflection electrode assembly 40 is installed downstream of the accelerating gate 20. By applying a specific voltage to the electrodes, a stable deflection electric field can be formed along the ion beam propagation path. When the ion beam, initially oriented by the piezoelectric driver 30, passes through the deflection electric field, it undergoes a secondary deflection under the influence of the electric field force. The deflection direction is determined by the polarity of the electric field, and the deflection angle can be precisely controlled by adjusting the electrode voltage. The higher the voltage and the stronger the electric field, the larger the deflection angle, thereby achieving fine-grained correction of the ion beam direction.

[0049] Furthermore, the deflection electrode group 40 includes a vertical deflection electrode group 401 and a horizontal deflection electrode group 402, which are orthogonally arranged. A deflection electric field is generated by applying a voltage to achieve omnidirectional deflection of the ion beam.

[0050] exist Figure 5In the illustrated embodiment, the deflection electrode group 40 consists of two sets of orthogonal deflection resistors, including a vertical deflection electrode group 401 and a horizontal deflection electrode group 402. The vertical deflection electrode group 401 consists of a pair of oppositely arranged electrodes, which, when energized, can form a deflection electric field in a vertical plane perpendicular to the ion beam axis, such as a vertical-up-down electric field. Similarly, the horizontal deflection electrode group 402 consists of a pair of oppositely arranged electrodes, orthogonal to the vertical deflection electrode group 401, which, when energized, can form a deflection electric field in a horizontal plane perpendicular to the ion beam axis, such as a horizontal-left electric field. The two sets of electrodes are arranged sequentially along the ion beam propagation path to ensure that the ion beam passes through the two orthogonal electric fields successively.

[0051] By adjusting the magnitude and polarity of the electrode voltage of the vertical deflection electrode group 401, the ion beam can be deflected vertically in the vertical plane; similarly, by adjusting the horizontal deflection electrode group 402, the ion beam can be deflected horizontally in the horizontal plane. When voltage is applied to both the vertical and horizontal deflection electrode groups simultaneously, the ion beam will be subjected to the combined force of two orthogonal electric fields, and the deflection direction will be along the direction of the combined force, such as diagonally upward, diagonally to the right, or any other direction, thereby achieving omnidirectional deflection of the ion beam in three-dimensional space, which can be projected to any position within the target area as needed.

[0052] The ion beam is initially oriented by the piezoelectric actuator 30, and then corrected by the deflection electrode group 40. This enables both large-angle omnidirectional deflection and fine-tuning of the direction by adjusting the voltage, thereby significantly improving the flexibility and accuracy of ion beam orientation control.

[0053] Figure 6 The diagram shows a flow chart of a method for controlling a directional ion beam according to another aspect of this application, the method comprising steps S11 and S12.

[0054] Step S11: Ion beams are injected through multiple screen gate holes of the screen gate.

[0055] Ion beams are typically generated from ion beam sources (such as plasma sources). They are divergent beams with dispersed shapes and inconsistent directions, making direct and precise directional control impossible. By guiding the ion beam through multiple apertures on a screen grid into the region between the screen grid and the accelerating grid, a relatively concentrated initial path is achieved, allowing for subsequent directional control of the ion beam.

[0056] Step S12: When the ion beam enters between the screen gate and the acceleration gate, the initial direction of the ion beam exiting from the acceleration gate aperture is changed to directional control of the ion beam, so that the ion beam is projected to the target position.

[0057] When the ion beam is between the two gates, the direction of the ion beam emitted from the acceleration gate aperture is changed. For example, by displacing the screen gate and the acceleration gate, the gate aperture position is adjusted, or the acceleration electric field is deflected to induce ion beam deflection. Ultimately, the ion beam is accurately projected onto the target position.

[0058] In one embodiment of this application, in step S12, a voltage is applied to generate a displacement along a plane parallel to the screen gate and the acceleration gate, causing the screen gate aperture and the acceleration gate aperture to also be displaced; and based on the displacement generated by the screen gate aperture and the acceleration gate aperture, the acceleration electric field between the two apertures is directionally shifted to change the initial direction of the ion beam emitted from the acceleration gate aperture.

[0059] exist Figure 7 In the illustrated embodiment, the screen gate and accelerating gate generate displacements parallel to the gate plane, which can be achieved by piezoelectric actuators evenly distributed between the two gates, such as four shear piezoelectric actuators evenly distributed at 90 degrees. Shear piezoelectric actuators exhibit the inverse piezoelectric effect, generating shear deformation proportional to the applied voltage under the action of an applied voltage. This, in turn, causes the screen gate and accelerating gate connected to them to generate displacements parallel to the gate plane. That is, when the same voltage is applied to the four piezoelectric actuators, they can produce the same displacement proportional to the voltage, parallel to the gate plane.

[0060] Initially, the gate apertures of the screen gate and the accelerating gate are concentrically aligned. When the gate undergoes a displacement parallel to its own plane, the relative positions of the screen gate aperture and the accelerating gate aperture will shift synchronously, changing from a concentric state to an eccentric state. The accelerating electric field between the screen gate and the accelerating gate will be directionally deflected as the aperture position shifts. When the ion beam passes through this deflecting electric field, the direction of the force will change with the electric field shift.

[0061] Figure 7 The image shows the emission direction of the ion beam. It can be determined using the following formula:

[0062]

[0063] in This indicates the translation distance of the accelerating gate. This indicates the spacing between the screen gate and the accelerating gate; the negative sign indicates that the gate displacement direction is opposite to the ion deflection direction.

[0064] In one embodiment of this application, the ion beam emitted from the accelerating gate aperture is deflected a second time by a deflection electric field to further control the orientation of the ion beam and project it to the target position.

[0065] By offsetting the accelerating electric field through the gate aperture, the initial direction of the ion beam emitted from the accelerating gate aperture can be directionally controlled, thus achieving directional control of the ion beam. Building upon this, a secondary deflection of the ion beam emitted from the accelerating gate aperture is further performed using a deflecting electric field. This compensates for potential issues such as insufficient angular accuracy and ion beam divergence in the initial deflection, ensuring a higher accuracy in the final projection of the ion beam onto the target position.

[0066] Furthermore, the deflection electric field includes a vertical deflection electric field and a horizontal deflection electric field. The secondary deflection of the ion beam emitted from the accelerating gate aperture by the deflection electric field includes: deflecting the ion beam in a vertical plane by the vertical deflection electric field, deflecting the ion beam in a horizontal plane by the horizontal deflection electric field; and superimposing the vertical and horizontal deflections to achieve secondary deflection of the ion beam emitted from the accelerating gate aperture.

[0067] exist Figure 8 In the illustrated embodiment, the ion beam achieves omnidirectional precise deflection through the layered control of vertical and horizontal orthogonal electric fields. Specifically, the vertical deflection electric field consists of vertically arranged electrode pairs; applying a voltage generates a vertical electric field that controls the deflection of the ion beam only in the vertical plane. The horizontal deflection electric field consists of horizontally arranged electrode pairs; applying a voltage generates a horizontal electric field that controls the deflection of the ion beam only in the horizontal plane. Finally, by vector superimposing the deflection angles in the two dimensions, the ion beam can be directed to any target direction in three-dimensional space.

[0068] Figure 8 The diagram shows the deflection direction of the ion beam during secondary deflection. The derivation process, where D is the deflection distance, V is the velocity of the cation leaving the electric field, and V x For the component of this velocity in the x-direction, V y This is the component of the velocity in the y-direction. First, calculate the electric field strength using the formula: Where E is the electric field strength, U is the voltage applied between the two plates, and W is the distance between the plates. The acceleration of the ion along the electric field direction (y-direction) in the deflecting electric field is... The calculation formula is as follows:

[0069]

[0070] in, For electric field force, Where q is the charge of the cation and m is the mass of the cation. The formula for calculating the travel time of the ion beam in the electric field is as follows:

[0071]

[0072] Where L is the length of the electrode, and v0 is the initial velocity of the cation before entering the electric field. Substituting into the above formula, we can obtain the formula for calculating the y-axis velocity of the ion beam when it leaves the electric field:

[0073]

[0074] Substituting the above formula into the equation yields the deflection direction of the ion beam. The calculation formula is as follows:

[0075]

[0076] The final deflection angle of the ion beam is equal to the initial offset. and secondary offset Vector superposition of angles: Initial offset The secondary offset is caused by the offset of the accelerating electric field due to the misalignment of the apertures of the screen gate and the accelerating gate. The total deflection angle of the ion beam is ultimately obtained by the deflection electrode assembly. This enables omnidirectional and precise ion beam directional control.

[0077] Figure 9 A schematic diagram of a semiconductor device according to another aspect of this application is shown, including: a process chamber (not shown), a front-end conduit 50, an ion beam source device 60, a pressure-controlled butterfly valve 70, and a control device for the directional ion beam; the front-end conduit 50 is disposed between the process chamber and the ion beam source device 60, for conveying process gas in the process chamber to the ion beam source device 60; the ion beam source device 60 is disposed at the front end of the screen grid 10, for dissociating the process gas to generate an ion beam; the control device is used to directionally control the ion beam, so that the ion beam is projected to a target position, thereby achieving directional cleaning of the downstream pressure-controlled butterfly valve 70.

[0078] Applying a directional ion beam control device to semiconductor equipment enables the targeted cleaning of process byproducts. The process chamber of semiconductor equipment is used to perform processes such as chip etching and deposition, which generate impurities such as ACHM process byproducts. A front-end conduit 50 connects the process chamber to the ion beam source device 60, removing residual process gases from the process chamber after the reaction, or specifically introducing cleaning gases, precisely delivering them to the ion beam source device 60.

[0079] The ion beam source device 60 is installed at the front end of the grid 10 of the directional ion beam control device, i.e., on the side where the ion beam enters the grid, or it can be directly integrated into the front-end channel 50. The ion beam source device 60 decomposes the gas supplied from the front-end channel 50 into a charged ion beam through plasma dissociation. For example, the introduced oxygen can be dissociated into oxygen cations and oxygen free radicals. Among them, oxygen free radicals have extremely high chemical activity and can be effectively used for material surface oxidation or removal of by-products in the process.

[0080] After receiving the ion beam generated by the ion beam source device 60, the directional ion beam control device precisely regulates the propagation path of the ion beam to ensure that the ion beam is projected onto the target cleaning position according to the preset trajectory. In the amorphous carbon hard mask (ACHM) process, the pressure-controlled butterfly valve 70 is the core target of ion beam directional cleaning, used to dynamically control the pressure stability of the process chamber. The directional cleaning positions of the pressure-controlled butterfly valve include cleaning the inner wall of the pressure-controlled butterfly valve and the pressure-controlled valve plate.

[0081] Figure 9 In this context, O2 represents oxygen molecules, and O represents oxygen free radicals. + 'A' represents oxygen cations, and 'A' represents the target location for planned cleanup. The oxygen cations O generated after dissociation are controlled by a directional ion beam device. + The oxygen free radicals move in a directional manner toward the target cleaning location and collide with free radicals (O) during the movement, causing the free radicals to also move toward the target cleaning location. This allows for precise projection onto the target cleaning location of the pressure-controlled butterfly valve 70. By utilizing the high activity of oxygen free radicals to oxidize and decompose byproducts, the pressure-controlled butterfly valve 70 is ultimately cleaned in a directional and precise manner, preventing the accumulation of byproducts from affecting the valve's pressure control accuracy and the stable operation of the equipment.

[0082] The basic concepts have been described above. Obviously, for those skilled in the art, the above disclosure is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0083] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0084] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

Claims

1. A control device for a directed ion beam, characterized in that The application relates to a method and a device for controlling an ion beam. The device comprises: a screen grid, an acceleration grid and at least one piezoelectric driver; the screen grid is provided with a plurality of screen grid holes for the ion beam to be injected from the screen grid holes; the acceleration grid is parallel to the screen grid and is provided with a plurality of acceleration grid holes which are the same in number as the screen grid holes for the ion beam to be ejected from the acceleration grid holes; 2. The control device according to claim 1, characterized by the at least one piezoelectric driver is arranged between the screen grid and the acceleration grid and is used to change the initial direction of the ion beam ejected from the acceleration grid holes so as to control the orientation of the ion beam and make the ion beam project to a target position.

3. The control device of claim 2, wherein The control device comprises a deflection electrode group arranged downstream of the acceleration grid and used to perform secondary deflection of the ion beam by a deflection electric field so as to further control the orientation of the ion beam and make the ion beam project to a target position.

4. The control device of claim 1, wherein The deflection electrode group comprises a vertical deflection electrode group and a horizontal deflection electrode group which are arranged orthogonally and generate a deflection electric field by applying voltage to realize omnidirectional deflection of the ion beam.

5. The control device of claim 1, wherein The screen grid is used to apply a positive potential and the acceleration grid is used to apply a negative potential to form an acceleration electric field between the screen grid and the acceleration grid.

6. The control device of claim 1, wherein The diameters of the screen grid holes and the acceleration grid holes are 0.5mm-2mm, and the diameter of the screen grid hole is greater than or equal to the diameter of the acceleration grid hole.

7. A method of controlling a directed ion beam using the apparatus for controlling a directed ion beam according to any one of claims 1 to 6, characterized by, The at least one piezoelectric driver is distributed along the screen grid and the acceleration grid in a circumferentially uniform angular distribution. The method comprises: injecting an ion beam from a plurality of screen grid holes of a screen grid; 8. The method of claim 7, wherein, when the ion beam enters between the screen grid and the acceleration grid, changing the initial direction of the ion beam ejected from the acceleration grid holes so as to control the orientation of the ion beam and make the ion beam project to a target position. The method further comprises:

9. The method of claim 7, wherein, performing secondary deflection of the ion beam ejected from the acceleration grid holes by a deflection electric field so as to further control the orientation of the ion beam and make the ion beam project to a target position. The changing of the initial direction of the ion beam ejected from the acceleration grid holes when the ion beam enters between the screen grid and the acceleration grid comprises: generating displacement of the screen grid holes and the acceleration grid holes by applying voltage along a plane parallel to the screen grid and the acceleration grid; and 10. The method of claim 8, wherein, based on the displacement of the screen grid holes and the acceleration grid holes, the acceleration electric field between the two holes is directionally offset to change the initial direction of the ion beam ejected from the acceleration grid holes. The deflection electric field comprises a vertical deflection electric field and a horizontal deflection electric field, and the performing of the secondary deflection of the ion beam ejected from the acceleration grid holes by the deflection electric field comprises: performing vertical plane deflection of the ion beam by the vertical deflection electric field and performing horizontal plane deflection of the ion beam by the horizontal deflection electric field; and superimposing the vertical plane deflection and the horizontal plane deflection to realize the secondary deflection of the ion beam ejected from the acceleration grid holes.

11. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions, when executed by a processor, implement the steps of the method of any one of claims 7-10.

12. A semiconductor device, characterized by comprising: Comprising: a process chamber, a front-stage pipeline, an ion beam source device, a pressure control butterfly valve, and a control device for directional ion beam as claimed in any one of claims 1-6; the front-stage pipeline is arranged between the process chamber and the ion beam source device, for delivering a process gas in the process chamber to the ion beam source device; the ion beam source device is arranged at the front end of the screen grid, for dissociating the process gas to generate an ion beam; the control device is used for directional control of the ion beam, so that the ion beam is projected to a target position, to achieve directional cleaning of the pressure control butterfly valve connected downstream.

Images