Quantum dot light-emitting device and preparation method thereof

Abstract

The invention provides a quantum dot light-emitting device and a preparation method thereof. The quantum dot light-emitting device includes: a light-emitting unit; a first groove is formed in the side, facing the light-emitting unit, of the light-transmitting base, a second groove is formed in the side, deviating from the light-emitting unit, of the light-transmitting base, and the light-emitting unit is arranged in the first groove; the quantum dot solution comprises a solvent and quantum dots, the quantum dots are dispersed in the solvent, and the quantum dot solution is arranged in the second groove. The quantum dot light-emitting device has the advantages of high performance, high reliability and low cost.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a quantum dot light-emitting device and its fabrication method. Background Technology

[0002] In the field of display technology, quantum dot materials have shown great potential in improving display quality due to their excellent optical properties such as narrow half-width and high color gamut, and have become an important component of high-end display devices.

[0003] Currently, the mainstream solutions for applying quantum dot materials to display devices include quantum dot (QD) optical films, quantum dot panels, and quantum dot light-emitting diodes (LEDs). However, these existing solutions all have significant drawbacks: QD films are expensive due to their high-barrier substrates, and the light conversion efficiency of quantum dot materials is relatively low; QD panels use polymer substrates, but quantum dots themselves have poor water and oxygen barrier properties, requiring complex encapsulation processes to ensure the stability of quantum dot materials. This increases process complexity and leads to a significant loss of quantum dot fluorescence efficiency (typically 10% to 15%); while QD-OLED technology is extremely expensive due to its complex device structure and manufacturing process. Therefore, there is an urgent need for a quantum dot application solution that can balance high performance, high reliability, and low cost. Summary of the Invention

[0004] This application provides a quantum dot light-emitting device and its fabrication method, which has the advantages of balancing high performance, high reliability and low cost.

[0005] This application provides a quantum dot light-emitting device, including: Light-emitting unit; A light-transmitting base, wherein the light-transmitting base has a first groove on the side facing the light-emitting unit and a second groove on the side away from the light-emitting unit, and the light-emitting unit is disposed in the first groove; A quantum dot solution disposed within the second groove; the quantum dot solution comprises a solvent and quantum dots, wherein the quantum dots are dispersed in the solvent.

[0006] In some embodiments, the quantum dot light-emitting device further includes a barrier layer that covers the opening of the second groove.

[0007] In some embodiments, the size of the barrier layer is larger than the opening size of the second groove and smaller than the outer edge size of the light-transmitting base.

[0008] In some embodiments, the quantum dot light-emitting device further includes a glass cover plate disposed on the barrier layer and the light-transmitting base.

[0009] In some embodiments, the light-emitting unit includes a blue light chip, and the quantum dot includes a green quantum dot.

[0010] In some embodiments, the light-emitting unit further includes a red phosphor layer disposed on the light-emitting side of the blue light chip.

[0011] In some embodiments, the light-emitting unit further includes a bracket having a third groove, the opening of the third groove being opposite to the bottom of the first groove, and the blue light chip and the red phosphor layer being disposed within the third groove.

[0012] In some embodiments, the depth of the first groove is greater than or equal to the height of the light-emitting unit.

[0013] This application also provides a method for fabricating a quantum dot light-emitting device, used to fabricate the above-mentioned quantum dot light-emitting device, the fabrication method comprising: Provide a light-emitting unit; A light-transmitting base is provided, and a first groove and a second groove are formed on opposite sides of the light-transmitting base, respectively; The light-transmitting base is placed over the light-emitting unit so that the light-emitting unit is located within the first groove; Provide a quantum dot solution, and inject the quantum dot solution into the second groove.

[0014] In some embodiments, after injecting the quantum dot solution into the second groove, the second groove is further sealed.

[0015] The quantum dot light-emitting device and its fabrication method provided in this application include a light-emitting unit, a light-transmitting base, and a quantum dot solution. The light-emitting unit and the quantum dot solution are respectively disposed in a first groove and a second groove of the light-transmitting base. The excitation light emitted by the light-emitting unit first passes through the light-transmitting base and then excites the quantum dot solution in the second groove, causing it to emit light of a specific wavelength, thereby achieving efficient light conversion. Quantum dots exhibit better dispersion in solution and their concentration is easily and precisely controlled. Combined with their inherent high fluorescence efficiency and narrow half-width characteristics, the device can achieve higher luminous brightness and a wider color gamut, avoiding the material waste problem in traditional quantum dot plate solutions. This significantly improves the effective utilization rate of quantum dot materials and reduces the overall manufacturing cost. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of a quantum dot light-emitting device provided in an embodiment of this application.

[0018] Figure 2 An environmental reliability test curve of the quantum dot light-emitting device provided in the embodiments of this application.

[0019] Figure 3 This is a schematic diagram of the structure of the light-transmitting base provided in an embodiment of this application.

[0020] Figure 4 This is a schematic flowchart illustrating the fabrication method of the quantum dot light-emitting device provided in the embodiments of this application. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0022] This application provides a quantum dot light-emitting device and its fabrication method, which has the advantages of balancing high performance, high reliability, and low cost. The following is a detailed description with reference to the accompanying drawings.

[0023] Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of a quantum dot light-emitting device provided in an embodiment of this application.

[0024] This application provides a quantum dot light-emitting device 100, which includes a light-emitting unit 10, a light-transmitting base 20, and a quantum dot solution 30.

[0025] The light-emitting unit 10 serves as the excitation source for the device and can be an LED chip with an emission wavelength in the ultraviolet to blue light range. Its emission spectrum should match the absorption band of the quantum dot, thereby efficiently converting light energy into excitation energy for the quantum dot. This light-emitting unit 10 possesses high power density and excellent photoelectric conversion efficiency, providing stable and sufficient excitation conditions for the quantum dot.

[0026] The light-transmitting base 20 constitutes the mechanical support body and optical transmission structure of the entire device. Its material is selected from glass or highly transparent ceramics with high light transmittance, excellent thermal stability, and good insulation properties, such as borosilicate glass or alumina transparent ceramics. Such materials can effectively reduce energy loss during light propagation and withstand the heat generated during device operation, avoiding deformation or cracking due to mismatched coefficients of thermal expansion. The light-transmitting base 20 has a first groove 21 on the side facing the light-emitting unit 10 and a second groove 22 on the side facing away from the light-emitting unit 10.

[0027] The light-emitting unit 10 is disposed in the first groove 21, the size of which is adapted to the shape of the light-emitting unit 10 to achieve precise positioning and stable assembly. Since the light-emitting surface of the light-emitting unit 10 faces the bottom wall of the first groove 21, this structure not only helps to constrain the direction of beam propagation, but also enhances the light extraction efficiency and reduces light loss caused by total internal reflection through the reflection and refraction of the groove wall.

[0028] The quantum dot solution 30 is disposed within the second groove 22. The quantum dot solution 30 comprises a solvent and quantum dots, with the quantum dots dispersed in the solvent. The quantum dots are semiconductor nanocrystals with size-dependent luminescence properties, such as cadmium selenide (CdSe) quantum dots or indium phosphide (InP) quantum dot systems. Their stimulated emission fluorescence exhibits advantages such as narrow half-maximum width and high color purity, enabling wide color gamut and high color saturation. The solvent is an inert organic solvent with high transparency, such as alkanes or aromatics, which provides a liquid environment that isolates the quantum dots from water vapor and oxygen, effectively suppressing common problems in solid-state films such as aggregation, fluorescence quenching, and photo-oxidation, significantly improving the luminescence stability and lifespan of the device.

[0029] Suitable inert organic solvents may include alkanes (such as octane and dodecane), alkenes (such as 1-octadecene and ODE), and some benzene derivatives (such as toluene and xylene).

[0030] In this embodiment, the quantum dots can be colloidal quantum dots synthesized by colloidal chemistry, which have characteristics such as uniform size, controllable morphology, and surface passivation by organic ligands. These quantum dots allow for precise size and composition control, thereby possessing excellent optical properties, such as high photoluminescence quantum yield, size-tunable emission wavelength, and outstanding photostability.

[0031] This application further limits the emission half-width (HWHM) of the quantum dots to less than 30 nm. HWHM refers to the wavelength width corresponding to half the peak height of the photoluminescence spectrum, and is a key parameter for evaluating the color purity of a light source. Controlling the HWHM within this range means that the colloidal quantum dots used in this application can emit monochromatic light with highly pure color, extremely high saturation, and a wide color gamut coverage, thereby meeting the stringent requirements for color reproduction in high-end display and lighting applications.

[0032] The solvent can be an organic solvent such as octane, dodecane, or 1-octadectone. The concentration of quantum dots in the solvent is controlled between 15 mg / ml and 20 mg / ml. This concentration range ensures that the solution has a suitable viscosity while allowing the quantum dots to achieve optimal photoluminescence efficiency. It should be noted that the choice of solvent must match the polarity of the ligands on the quantum dot surface and the solvent used in the synthesis process, following the principle of "like dissolves like." Generally, nonpolar or weakly polar solvents are preferred, and the solution system should be controlled to be close to neutral (pH≈7) to maintain the stability of the chemical state of the quantum dot surface.

[0033] The quantum dot light-emitting device 100 operates as follows: After being powered on, the light-emitting unit 10 emits excitation light of a specific wavelength (typically ultraviolet or blue light). This excitation light first passes through a light-transmitting base 20 with high light transmittance, and then precisely illuminates the quantum dot solution 30 contained in the second groove 22. The quantum dots in the quantum dot solution 30, upon excitation, emit light of the target wavelength, thereby achieving precise light color conversion and synthesis.

[0034] In summary, this application achieves efficient integration of the light-emitting unit 10 and the quantum dot solution 30 in terms of spatial structure and optical path through the integrated first groove 21 and second groove 22 on the light-transmitting base 20. This design not only fully leverages the performance advantages of the quantum dot solution 30 in terms of luminous efficiency, color gamut coverage, and color saturation, but also significantly enhances the physical stability of the device and its isolation capability from water and oxygen environments through the stable mechanical support provided by the light-transmitting base 20 and the liquid sealing environment formed by the quantum dot solution 30 itself. Most importantly, compared to the yellowing phenomenon caused by the degradation of the matrix material during long-term photothermal aging of traditional solid quantum dot films, the liquid quantum dot solution 30 system used in this application fundamentally avoids such problems—the liquid environment effectively blocks direct contact between the quantum dots and moisture and oxygen in the air, while eliminating the risk of photo-oxidation of solid encapsulation materials under long-term light exposure leading to a decrease in light transmittance, thereby ensuring that the device maintains stable light and color performance and excellent light transmission characteristics during long-term use.

[0035] In some optional embodiments, the quantum dot light-emitting device 100 further includes a barrier layer 40 covering the second groove 22. The barrier layer 40 achieves a primary liquid seal for the quantum dot solution 30, effectively preventing performance degradation of the quantum dot solution 30 due to evaporation, leakage, or contamination by the external environment.

[0036] In one specific embodiment, the barrier layer 40 is a layered polymer film made of a transparent resin material that is insoluble, has high light transmittance, and possesses a certain degree of flexibility, such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Such materials inherently have extremely low water vapor and oxygen permeability, providing a stable initial protective environment for the internal quantum dot solution 30.

[0037] In another alternative embodiment, the barrier layer 40 is an inorganic thin film layer directly formed on the surface of the groove 22 opening by physical vapor deposition (such as thermal evaporation or electron beam evaporation). Suitable inorganic materials include, but are not limited to, metal oxides, such as alumina (Al2O3), silicon oxide (SiO2), metal nitrides, such as silicon nitride (Si3N4), or their composite stacked structures. Such inorganic barrier layers 40 have a dense amorphous structure, and their water and oxygen barrier performance can be improved by several orders of magnitude compared to polymer films. Through processes such as thermal evaporation, a uniform, pinhole-free, and stress-controllable nanoscale thin film can be formed on the surface of the light-transmitting base 20 at a relatively low temperature. This film has good adhesion to the light-transmitting base 20, for example, if the material is glass, thereby achieving a more direct and effective seal for the groove 22 opening, fundamentally enhancing the device's long-term barrier capability against water vapor and oxygen.

[0038] The size of the barrier layer 40 is larger than the groove size of the second groove 22 and smaller than the outer boundary size of the light-transmitting base 20, so as to ensure that the barrier layer 40 can completely cover and seal the groove to prevent the quantum dot solution 30 from leaking. At the same time, its edge is confined to the light-transmitting base 20, providing a flat and stepless transition interface for the subsequent bonding of the glass cover 50, avoiding weak sealing points caused by edge lifting.

[0039] Based on this, the quantum dot light-emitting device 100 also includes a glass cover plate 50, which is disposed on the barrier layer 40 and the light-transmitting base 20. The glass cover plate 50 is attached to the surface of the barrier layer 40 and the surrounding light-transmitting base 20 by a high-transmittance adhesive 60 (such as UV-curable optical adhesive). As a second rigid barrier, the glass cover plate 50 itself has extremely low water and oxygen transmittance, providing long-term, stable physical isolation protection. The glass cover plate 50 and the barrier layer 40 work together to form multiple sealing layers, which can protect the quantum dot solution 30.

[0040] In some optional embodiments, the light-emitting unit 10 includes a blue light chip 11 whose emission wavelength is controlled within the range of 450 nm to 470 nm. This wavelength band has high photon energy, enabling it to efficiently serve as a primary light source and excitation source for the device. The quantum dots include green quantum dots whose emission wavelength is designed between 520 nm and 550 nm. This wavelength band is located within the region of human visual sensitivity, meaning that for the same light power generated in this band, the human eye perceives a higher brightness. This characteristic gives devices using these green quantum dots an advantage in total luminous flux output, thereby contributing to improved overall luminous efficiency.

[0041] To further achieve white light synthesis, the light-emitting unit 10 also includes a red phosphor layer 12, which is disposed on the light-emitting side of the blue light chip 11, i.e., on its light propagation path. This arrangement ensures that some of the blue light emitted from the blue light chip 11 will first penetrate the red phosphor layer 12 during its emission process, thereby effectively exciting it to emit the target red light. Finally, blue light, red light, and green light are combined to form white light.

[0042] The light-emitting unit 10 also includes a support 13, which serves as the mechanical carrier and structural foundation of the entire light-emitting unit 10. The support 13 has a third groove 131, which forms an integrated optical cavity. The blue light chip 11 and the red phosphor layer 12 are both disposed within the third groove 131, with the red phosphor layer 12 filling the area above and around the blue light chip 11 to form a complete encapsulation structure.

[0043] In this embodiment, the red phosphor layer 12 innovatively combines the dual functions of fluorescence conversion and chip encapsulation. This layer is formed on and around the light-emitting side of the blue LED chip 11 by uniformly mixing red phosphor particles with a transparent encapsulation substrate, and then applying the mixture through processes such as dot coating, molding, or printing, achieving complete encapsulation of the chip. The red phosphor particles are preferably fluoride phosphors (K2SiF6:Mn). 4+ KSF (KF) can be effectively excited by blue light and emit red light with a narrow half-width.

[0044] Therefore, the red phosphor layer 12, as an encapsulation layer, provides necessary mechanical protection, electrical insulation, and environmental protection for the blue light chip 11, replacing the traditional single-function barrier layer 40. By uniformly dispersing the red phosphor in the encapsulation layer, the uniformity of red light conversion is ensured, effectively avoiding local color shift problems caused by uneven phosphor distribution. The design that integrates the phosphor function and the encapsulation structure simplifies the device structure and manufacturing process, reduces the types of materials and usage steps, and improves product consistency while also helping to reduce production costs.

[0045] To verify the advantages of the quantum dot light-emitting device 100 proposed in this invention in terms of optical performance, the following comparative test was designed and conducted.

[0046] In the test sample (hereinafter referred to as QDLED) provided in this application embodiment, the quantum dot solution 30 is made of green CdSe / ZnS core-shell structure quantum dots with an emission peak wavelength of 540nm. Simultaneously, a phosphor layer based on KSF red phosphor is disposed on the light-emitting side of the blue light chip 11 with an emission wavelength of 455nm. Through the synergistic light color conversion of the two, a quantum dot light-emitting device 100 capable of emitting white light is finally fabricated.

[0047] As Comparative Example 1, a white LED (hereinafter referred to as phosphor LED) was fabricated using the exact same support structure 13 and blue light chip 11, but using a conventional phosphor scheme (i.e., a mixed system of β-SiAlON green phosphor and KSF red phosphor). As Comparative Example 2, a barrier quantum dot film (hereinafter referred to as QD film) was selected, and its formulation was adjusted so that its initial color coordinates were close to the target values ​​of the aforementioned devices.

[0048] The color points (i.e., color coordinates) of the three devices were uniformly calibrated to the same value. Subsequently, they were placed in the same integrating sphere test system and under constant current drive conditions to measure and compare key photoelectric parameters. The test results of their brightness and luminous efficacy are shown in Table 1 below.

[0049] Table 1

[0050] Performance comparison results show that, under the premise of basically the same color coordinates, the quantum dot light-emitting device 100 (QD-LED) provided in this application embodiment exhibits a significant brightness advantage: its luminous brightness is increased by about 18% compared with the phosphor white LED in the comparative example, and by about 43% compared with the barrier-type QD film solution in the comparative example. This data fully demonstrates that the device in this application, through its unique structural design, effectively improves the light conversion efficiency, thereby achieving a significant optimization of energy efficiency.

[0051] Please see Figure 2 , Figure 2 This is an environmental reliability test curve of the quantum dot light-emitting device provided in the embodiments of this application. To assess the long-term stability of the device, it was continuously lit at a power of 0.5W for 360 hours under harsh conditions of 50°C and 90% relative humidity. The test results show that the device did not exhibit significant light decay after aging, and the key optical parameters remained stable.

[0052] In some alternative embodiments, please refer to Figure 3 , Figure 3 This is a schematic diagram of the structure of the light-transmitting base provided in an embodiment of this application. The key dimensions of the light-transmitting base are optimized to balance the optical performance and structural strength of the device. Specifically, the overall height of the light-transmitting base is designed to be 3.7 mm. The first groove for accommodating the light-emitting unit has a depth of 0.7 mm, while the second groove for accommodating the quantum dot solution has a depth of 2 mm. The width of the second groove is designed to be 2.8 mm, and the width from its edge to the edge of the light-transmitting base is 5 mm. This design provides the necessary structural support margin for the device and ensures the stability of the optical window.

[0053] In some optional embodiments, the depth of the first groove 21 is greater than or equal to the height of the light-emitting unit 10 to ensure that the light-emitting unit 10 can be completely accommodated within the internal space of the first groove 21. Specifically, the first groove 21 refers to a precision cavity structure provided on the side of the light-transmitting base 20 facing the light-emitting unit 10, whose main function is to provide precise positioning and stable mechanical support for the light-emitting unit 10. The height of the light-emitting unit 10 mentioned here refers to its total vertical dimension from the mounting reference plane to the highest light-emitting surface. The core purpose of designing the depth of the first groove 21 to be no less than the height of the light-emitting unit 10 is to ensure that the light-emitting unit 10 can be completely accommodated within the first groove 21, that is, the overall structure of the light-emitting unit 10 does not protrude beyond the opening plane of the groove in the depth direction.

[0054] Optically, when the light-emitting unit 10 is fully contained within the groove, a controllable optical space is formed between its light-emitting surface and the reference surface of the light-transmitting base 20. This helps guide and homogenize the light emitted from the sides and surface of the light-emitting unit 10, resulting in a more uniform light field distribution when it enters the light-transmitting base 20 and is incident on the quantum dot solution 30 in the second groove 22, thereby improving excitation efficiency and light emission consistency. In terms of mechanical reliability, this structure effectively prevents the light-emitting unit 10 from shifting or being damaged by external forces during subsequent packaging processes (such as coating the adhesive 60 and attaching the cover plate) or during transportation and use, thus ensuring long-term product yield and reliability.

[0055] When the light-emitting unit 10 includes a bracket 13, the height of the bracket 13 is the key dimension that determines the total height of the light-emitting unit 10. In a specific embodiment of this application, the height of the bracket 13 is set to 0.5 mm, which matches the aforementioned depth of the first groove 21 of 0.7 mm, ensuring that the light-emitting unit 10 can be perfectly accommodated within the groove.

[0056] Please see Figure 4 , Figure 4 This is a schematic flowchart illustrating the fabrication method of the quantum dot light-emitting device provided in the embodiments of this application.

[0057] This application provides a method for fabricating a quantum dot light-emitting device 100. This method, through an optimized process flow, achieves the fabrication of a high-performance, high-reliability quantum dot light-emitting device 100. The fabrication method of the quantum dot light-emitting device 100 includes the following steps.

[0058] S1. Provide a light-emitting unit 10.

[0059] In some embodiments, this step specifically includes: providing a support 13 having a third groove 131; providing a blue light chip 11 and disposing the blue light chip 11 within the third groove 131; subsequently, filling the third groove 131 with a red phosphor layer 12 to cover the light-emitting side of the blue light chip 11. The red phosphor layer 12 (e.g., using KSF phosphor) performs a wavelength conversion function in this process, converting a portion of the blue light into red light.

[0060] It is worth noting that the red phosphor layer 12 can also serve as an encapsulation layer for the blue LED chip 11. Specifically, the phosphor particles are pre-uniformly dispersed in the optical adhesive used to fix the chip, thereby integrally forming the red phosphor layer 12 while completing the chip encapsulation. Thus, the phosphor layer, the blue LED chip 11, and the green quantum dot solution 30 within the second groove 22 in subsequent steps together constitute a highly efficient, high color gamut white light synthesis system.

[0061] S2. A light-transmitting base 20 is provided, and a first groove 21 and a second groove 22 are formed on opposite sides of the light-transmitting base 20, respectively.

[0062] The base, serving as both the support substrate and optical transmission medium for the device, is preferably made of materials with high light transmittance, good thermal stability, and insulation, such as glass. Subsequently, through precision processing techniques such as wet etching or laser etching, a first groove 21 is formed on the first surface of the light-transmitting base 20 (i.e., the side facing the light-emitting unit 10), and a second groove 22 is formed on the second surface opposite to the first surface. The first groove 21 is used to accommodate and position the light-emitting unit 10, and its depth is precisely designed to ensure that the light-emitting unit 10 can be completely accommodated; the second groove 22 serves as a sealed cavity for subsequently accommodating the quantum dot solution 30. This double-sided groove structure is the core of achieving partitioned integration of the light-emitting unit 10 and the quantum dot solution 30 without interference.

[0063] S3. Place the light-transmitting base 20 over the light-emitting unit 10 so that the light-emitting unit 10 is located within the first groove 21. This step achieves the initial integration of the excitation light source and the light conversion unit in the mechanical structure.

[0064] S4. Provide quantum dot solution 30 and inject quantum dot solution 30 into second groove 22.

[0065] The quantum dot solution 30 comprises an inert organic solvent and colloidal quantum dots with a full width at half maximum (FWHM) of less than 30 nm. This step can be performed in an inert gas-protected environment (such as a glove box) to minimize the performance degradation of the quantum dot solution 30 due to contact with water and oxygen during the injection process.

[0066] The method for preparing the quantum dot light-emitting device 100 after injecting the quantum dot solution 30 into the second groove 22 also includes a crucial step of sealing the second groove 22 to ensure the long-term reliability of the device. Specifically, this may include: covering the opening of the second groove 22 with a barrier layer 40 for initial liquid sealing; applying adhesive 60 to the barrier layer 40 and the surrounding light-transmitting base 20; and finally, bonding and curing a glass cover plate 50 with the adhesive 60 to form a robust and reliable three-layer (film-adhesive layer-cover plate) sealing structure.

[0067] The adhesive 60 can be an optical adhesive with high water and oxygen barrier properties, meaning it has extremely low water vapor and oxygen transmittance, serving as an effective barrier against environmental water and oxygen erosion of the quantum dot solution 30. Simultaneously, the adhesive 60 also needs to have high light transmittance to ensure light extraction efficiency.

[0068] In summary, this fabrication method integrates the light-emitting unit 10 and the quantum dot solution 30 onto a single transparent substrate 20, exhibiting high synergy. This method not only avoids the complex multi-layer bonding and separate encapsulation processes of traditional technologies, but also significantly improves the environmental reliability of the device through an integrated sealing solution. The overall process is conducive to large-scale production and cost control.

[0069] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0070] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0071] The quantum dot light-emitting devices and their fabrication methods provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A quantum dot light emitting device, comprising: The quantum dot light emitting device comprises: a light emitting unit; a light transmitting base, which has a first groove on a side facing the light emitting unit and a second groove on a side facing away from the light emitting unit, the light emitting unit being disposed in the first groove; a quantum dot solution, which is disposed in the second groove, the quantum dot solution comprising a solvent and quantum dots dispersed in the solvent.

2. The quantum dot light emitting device of claim 1, wherein, A barrier layer is further included, which covers a groove opening of the second groove.

3. The quantum dot light emitting device of claim 2, wherein, The barrier layer has a size greater than that of the groove opening of the second groove and less than that of an outer edge of the light transmitting base.

4. The quantum dot light emitting device of claim 2, wherein, A glass cover plate is further included, which is disposed on the barrier layer and the light transmitting base.

5. The quantum dot light emitting device of any one of claims 1 to 4, wherein, The light emitting unit comprises a blue light chip, and the quantum dots comprise green quantum dots.

6. The quantum dot light emitting device of claim 5, wherein, The light emitting unit further comprises a red phosphor layer, which is disposed on a light emitting side of the blue light chip.

7. The quantum dot light emitting device of claim 6, wherein, The light emitting unit further comprises a support, which has a third groove, a groove opening of the third groove being opposite to a bottom of the first groove, the blue light chip and the red phosphor layer being disposed in the third groove.

8. The quantum dot light emitting device of any one of claims 1 to 4, wherein, The first groove has a depth greater than or equal to a height of the light emitting unit.

9. A method for fabricating a quantum dot light-emitting device, characterized in that, A method for preparing the quantum dot light emitting device of any one of claims 1 to 8, the method comprising: providing a light emitting unit; providing a light transmitting base, and forming a first groove and a second groove on opposite sides of the light transmitting base, respectively; covering the light transmitting base on the light emitting unit, so that the light emitting unit is located in the first groove; providing a quantum dot solution, and injecting the quantum dot solution into the second groove.

10. The method for fabricating a quantum dot light-emitting device according to claim 9, characterized in that, The method further comprises, after the quantum dot solution is injected into the second groove, sealing the second groove. The method further comprises, after the quantum dot solution is injected into the second groove, sealing the second groove.

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