Display panel and manufacturing method therefor, and display apparatus

Abstract

Disclosed in the present application are a display panel and a manufacturing method therefor, and a display apparatus. An auxiliary portion is arranged on one side of a corresponding first electrode, and a light-emitting portion is arranged on the side of the corresponding auxiliary portion that is away from the first electrode, wherein the auxiliary portion comprises a first material, the light-emitting portion comprises a plurality of quantum dots and a connection structure connected between the plurality of quantum dots, the connection structure comprises the first material substituted by a cross-linked structure, and the connection structure is connected to the quantum dots by means of the cross-linked structure.

Description

Display panel and its manufacturing method, display device

[0001] This application claims priority to Chinese Patent Application No. 202411600791.1, filed with the Chinese Patent Office on November 11, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of display technology, and in particular to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0003] Quantum dots are extremely small semiconductor nanocrystals invisible to the naked eye, with a particle size of less than 10 nanometers. Typically, quantum dots are composed of zinc, cadmium, selenium, and sulfur atoms. A unique property of quantum dots is that they emit colored light when stimulated by light or electricity. The color of the light is determined by the constituent materials, size, and shape of the quantum dots. This property allows quantum dots to alter the color of light emitted from a light source.

[0004] Quantum dot light-emitting diode (QLED) display panels have unique advantages, such as wide color gamut, high purity, high brightness, low voltage, and extremely thin appearance, and therefore have great development prospects.

[0005] Currently, photolithography is commonly used to fabricate QLED display panels. However, during the patterning process of the quantum dot emitting layer in the preset color emitting area, the material of the quantum dot emitting layer is prone to remain in other color emitting areas, which in turn affects the color gamut and the display effect of the display panel. Technical solutions

[0006] This application provides a display panel and its manufacturing method and display device, which can avoid the phenomenon of residual light-emitting layer in non-preset areas during the patterning process, improve the color gamut of the display panel, and enhance the display effect of the display panel.

[0007] This application provides a display panel, which includes:

[0008] The first electrode layer includes a plurality of first electrodes;

[0009] An auxiliary layer is disposed on one side of the first electrode layer. The auxiliary layer includes a plurality of auxiliary parts disposed corresponding to a plurality of first electrodes, and the auxiliary parts are disposed on one side of the corresponding first electrodes.

[0010] A light-emitting layer is disposed on the side of the auxiliary layer away from the first electrode layer. The light-emitting layer includes a plurality of light-emitting portions disposed corresponding to the plurality of auxiliary portions. The light-emitting portions are disposed on the side of the corresponding auxiliary portion away from the first electrode.

[0011] The second electrode layer is disposed on the side of the light-emitting layer away from the auxiliary layer;

[0012] The auxiliary part includes a first material, and the light-emitting part includes a plurality of quantum dots and a connection structure connecting the plurality of quantum dots. The connection structure includes the first material replaced by a cross-linked structure, and the connection structure is connected to the quantum dots through the cross-linked structure.

[0013] In accordance with the above-mentioned objectives of this application, embodiments of this application also provide a method for manufacturing a display panel, the method comprising the following steps:

[0014] A first electrode layer is formed, and a plurality of first electrodes are formed in the first electrode layer;

[0015] An auxiliary layer and a light-emitting layer are formed on one side of the first electrode layer. The light-emitting layer is formed on the side of the auxiliary layer away from the first electrode layer. The auxiliary layer has multiple auxiliary portions corresponding to multiple first electrodes. The light-emitting layer has multiple light-emitting portions corresponding to multiple auxiliary portions. The auxiliary portions are disposed on one side of their corresponding first electrodes, and the light-emitting portions are disposed on the side of their corresponding auxiliary portions away from the first electrodes. Each auxiliary portion includes a first material. Each light-emitting portion includes multiple quantum dots and a connecting structure connecting the multiple quantum dots. The connecting structure includes the first material replaced by a cross-linked structure, and the connecting structure is connected to the quantum dots through the cross-linked structure.

[0016] A second electrode layer is formed on the side of the light-emitting layer away from the auxiliary layer.

[0017] In accordance with the above-mentioned objectives of this application, embodiments of this application also provide a display device, the display device including a display panel, the display panel comprising:

[0018] The first electrode layer includes a plurality of first electrodes;

[0019] An auxiliary layer is disposed on one side of the first electrode layer. The auxiliary layer includes a plurality of auxiliary parts disposed corresponding to a plurality of first electrodes, and the auxiliary parts are disposed on one side of the corresponding first electrodes.

[0020] A light-emitting layer is disposed on the side of the auxiliary layer away from the first electrode layer. The light-emitting layer includes a plurality of light-emitting portions disposed corresponding to the plurality of auxiliary portions. The light-emitting portions are disposed on the side of the corresponding auxiliary portion away from the first electrode.

[0021] The second electrode layer is disposed on the side of the light-emitting layer away from the auxiliary layer;

[0022] The auxiliary part includes a first material, and the light-emitting part includes a plurality of quantum dots and a connection structure connecting the plurality of quantum dots. The connection structure includes the first material replaced by a cross-linked structure, and the connection structure is connected to the quantum dots through the cross-linked structure. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0025] Figures 1a to 1d are schematic diagrams of the manufacturing process of a display panel provided in one embodiment;

[0026] Figure 2 is a schematic diagram of a display panel provided in an embodiment of this application;

[0027] Figure 3 is a schematic diagram of a quantum dot connection structure provided in an embodiment of this application;

[0028] Figure 4 is a schematic diagram of another structure of the display panel provided in an embodiment of this application;

[0029] Figure 5 is a flowchart of the manufacturing method of the display panel provided in the embodiment of this application;

[0030] Figures 6 to 10 are schematic diagrams illustrating the manufacturing process of a display panel provided in an embodiment of this application.

[0031] Explanation of reference numerals in the attached figures: 1. Substrate; 2. Anode; 3. Pixel definition layer; 4. Light-emitting material layer; 5. Light-emitting layer; 6. Residual material; 10. First electrode layer; 11. First electrode; 20. Auxiliary layer; 21. Auxiliary part; 211. First auxiliary part; 212. Second auxiliary part; 213. Third auxiliary part; 210. Auxiliary part to be etched; 30. Light-emitting layer; 31. Light-emitting part; 311. First light-emitting part; 312. Second light-emitting part; 313. Third light-emitting part; 310. Light-emitting material layer; 32. Quantum dot; 321. Quantum dot body; 322. Third material; 33. Connection structure; 331. Cross-linking structure; 3101. Light-emitting part to be etched; 40. Second electrode layer; 50. Array substrate; 60. Pixel definition layer; 70. First functional layer; 80. Mask. Embodiments of the present invention

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0033] Referring to Figures 1a to 1d, the fabrication method of the existing quantum dot light-emitting display panel includes:

[0034] A substrate 1 is provided, and the substrate 1 may include a substrate and a thin-film transistor layer disposed on the substrate.

[0035] Multiple anodes 2 are formed on substrate 1.

[0036] A pixel definition layer 3 is formed on the substrate 1, and multiple pixel openings are formed in the pixel definition layer 3. Each pixel opening can expose the surface of an anode 2.

[0037] A quantum dot material layer 4 is formed on the pixel definition layer 3.

[0038] The quantum dot material layer 4 is patterned using a mask to form a light-emitting layer 5 located at a preset pixel opening position.

[0039] In this process, functional films such as hole transport layers or electron blocking layers are formed between the anode 2 and the light-emitting layer 5. During the film formation process, the quantum dot material layer 4 undergoes a cross-linking reaction and cross-links with the underlying functional films such as hole transport layers or electron blocking layers. This increases the adhesion between the quantum dot material layer 4 and the underlying functional films such as hole transport layers or electron blocking layers. Consequently, during the removal of the quantum dot material layer 4, residual material 6 of the quantum dot material layer 4 is formed in the non-preset pixel opening. Since the light emission color of the light-emitting layer 5 formed in the preset pixel opening is different from the light emission color of the light-emitting layer 5 to be formed in the non-preset pixel opening, the residual material 6 will affect the light emission of the light-emitting layer 5 in the non-preset opening, thus affecting the color gamut of the display panel and the display effect of the display panel.

[0040] Referring to Figures 2 and 3, this application embodiment provides a display panel, which includes a first electrode layer 10, an auxiliary layer 20, a light-emitting layer 30, and a second electrode layer 40.

[0041] The first electrode layer 10 includes a plurality of first electrodes 11; the auxiliary layer 20 is disposed on one side of the first electrode layer 10, and the auxiliary layer 20 includes a plurality of auxiliary parts 21 corresponding to the plurality of first electrodes 11, the auxiliary parts 21 being disposed on one side of the corresponding first electrode 11; the light-emitting layer 30 is disposed on the side of the auxiliary layer 20 away from the first electrode layer 10, the light-emitting layer 30 including a plurality of light-emitting parts 31 corresponding to the plurality of auxiliary parts 21, the light-emitting parts 31 being disposed on the side of the corresponding auxiliary part 21 away from the first electrode 11; the second electrode layer 40 is disposed on the side of the light-emitting layer 30 away from the auxiliary layer 20.

[0042] Furthermore, the auxiliary part 21 includes a first material, and the light-emitting part 31 includes a plurality of quantum dots 32 and a connection structure 33 connecting the plurality of quantum dots 32. The connection structure 33 includes the first material replaced by a cross-linking structure 331, and the connection structure 33 is connected to the quantum dots 32 through the cross-linking structure 331.

[0043] In the implementation process, this embodiment adds an auxiliary part 21 between the light-emitting part 31 and the first electrode 11. The first material in the auxiliary part 21 does not have the cross-linking structure 331 relative to the light-emitting part 31. Therefore, the first material in the auxiliary part 21 is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31 is avoided. This reduces the adhesion between the auxiliary part 21 and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31. Since the auxiliary part 21 is located between the light-emitting part 31 and the first electrode 11, during the patterning process of the light-emitting layer 30, when removing the light-emitting part 31, the same layer material of the light-emitting part 31 and the same layer material of the auxiliary part 21 below can be removed simultaneously. This avoids the phenomenon of the light-emitting layer 30 remaining in non-preset areas during the patterning process, improves the color gamut of the display panel, and enhances the display effect of the display panel.

[0044] In one embodiment of this application, the first material comprises at least one of the following compounds:

[0045] In one embodiment of this application, the connection structure includes at least one of the following structures:

[0046] In this context, * indicates a connection site.

[0047] In one embodiment of this application, the cross-linked structure replaces hydrogen atoms in the first material.

[0048] In one embodiment of this application, the light-emitting layer includes a first light-emitting part, a second light-emitting part, and a third light-emitting part. The quantum dots in the first light-emitting part, the quantum dots in the second light-emitting part, and the quantum dots in the third light-emitting part are selected from any one of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots in the first light-emitting part, the quantum dots in the second light-emitting part, and the quantum dots in the third light-emitting part are all different from each other.

[0049] The auxiliary layer includes a first auxiliary portion located between the first electrode and the first light-emitting portion, a second auxiliary portion located between the first electrode and the second light-emitting portion, and a third auxiliary portion located between the first electrode and the third light-emitting portion. The first material in the first auxiliary portion, the first material in the second auxiliary portion, and the first material in the third auxiliary portion are selected from the same or different first materials.

[0050] In one embodiment of this application, the quantum dot includes a quantum dot body and a second material attached to the quantum dot body, wherein the second material is selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

[0051] In one embodiment of this application, the auxiliary layer further includes a third material selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

[0052] In one embodiment of this application, the display panel further includes a first functional layer, which is located at least between the auxiliary portion and the first electrode, and the adhesive force between the auxiliary portion and the first functional layer is less than the adhesive force between the auxiliary portion and the light-emitting portion.

[0053] Specifically, referring to Figures 2 and 3, the display panel further includes an array substrate 50 and a pixel definition layer 60, wherein the first electrode layer 10 is disposed on the array substrate 50 and the pixel definition layer 60 is disposed on the first electrode layer 10.

[0054] In some embodiments, the array substrate 50 may include a substrate and a thin-film transistor layer disposed on the substrate, the thin-film transistor layer being located on the side of the substrate closer to the first electrode layer 10. The substrate may be a rigid substrate, such as a glass substrate; or the substrate may be a flexible substrate, such as a substrate formed of polyimide. When the substrate is a flexible substrate, it may be formed of multiple sub-substrates of the same material, such as polyimide, with adjacent sub-substrates bonded together by adhesive sub-layers.

[0055] In some embodiments, the thin-film transistor layer includes a thin-film transistor comprising a semiconductor located on the substrate, the semiconductor being formed of polycrystalline silicon or a metal oxide (such as indium gallium zinc oxide). The semiconductor is divided into a channel region and source and drain regions formed on either side of the channel region. The thin-film transistor layer further includes a first gate insulating layer covering the semiconductor. The thin-film transistor also includes a first gate formed on the first gate insulating layer, the first gate overlapping the channel region. The first gate may be formed as multiple layers or a single layer comprising a low-resistance material such as Al, Ti, Mo, Cu, Ni, or alloys thereof, or a material with high corrosion resistance. The thin-film transistor layer further includes a second gate insulating layer covering the first gate. The thin-film transistor also includes a second gate located on the second gate insulating layer, the second gate overlapping the first gate, the second gate being formed as multiple layers or a single layer comprising a low-resistance material such as Al, Ti, Mo, Cu, Ni, or alloys thereof, or a material with high corrosion resistance. The thin-film transistor layer further includes a first interlayer insulating layer formed on the second gate. The first interlayer insulating layer, the first gate insulating layer, and the second gate insulating layer include source contact holes and drain contact holes, and the source region and the drain region are exposed through the source contact holes and the drain contact holes, respectively.

[0056] The thin-film transistor further includes a source and a drain disposed on the same layer. Both the source and the drain are formed on the first interlayer insulating layer. The source is connected to the source region through a source contact hole, and the drain is connected to the drain region through a drain contact hole. The source and the drain can be multiple layers or a single layer formed of low-resistance materials such as Al, Ti, Mo, Cu, Ni, or their alloys, or materials with high corrosion resistance. For example, the source and the drain can be a triple layer of Ti / Cu / Ti, Ti / Ag / Ti, Ti / Al / Ti, or Mo / Al / Mo, or other single-layer or multi-layer structures.

[0057] In some embodiments, the array substrate 50 further includes a planarization layer located between the thin-film transistor layer and the first electrode layer 10, the planarization layer covering the source and the drain.

[0058] In some embodiments, the pixel definition layer 60 is disposed on the planarization layer and the first electrode layer 10, and the pixel definition layer 60 has a plurality of pixel openings, each of which is disposed in a one-to-one correspondence with a plurality of first electrodes 11, and the pixel openings expose the surface of the corresponding first electrode 11.

[0059] In some embodiments, a plurality of auxiliary portions 21 in the auxiliary layer 20 are disposed within a plurality of pixel openings. For example, one auxiliary portion 21 is located within one pixel opening, and each auxiliary portion 21 is located on the side of a corresponding first electrode 11 away from the array substrate 50.

[0060] In some embodiments, a plurality of light-emitting portions 31 in the light-emitting layer 30 are disposed corresponding to a plurality of pixel openings. For example, one light-emitting portion 31 is located in one pixel opening, or one light-emitting portion 31 is partially located in the pixel opening and the other part extends outside the pixel opening and is located on the side of the pixel definition layer 60 away from the array substrate 50; and each light-emitting portion 31 is located on the side of a corresponding auxiliary portion 21 away from the first electrode 11.

[0061] Furthermore, the second electrode layer 40 is disposed on the side of the light-emitting layer 30 away from the auxiliary layer 20, and the second electrode layer 40 covers the plurality of light-emitting parts 31 and the pixel definition layer 60.

[0062] It should be noted that the light-emitting layer 30 provided in this application embodiment can be a quantum dot light-emitting layer, and the first electrode layer 10 can be an anode, the second electrode layer 40 can be a cathode, and the holes provided by the first electrode layer 10 and the electrons provided by the second electrode layer 40 converge in the light-emitting layer 30 to form photons, which can emit light through the recombination of photons.

[0063] In some embodiments, referring to FIG4, the display panel further includes a first functional layer 70, which is located between the auxiliary layer 20 and the first electrode layer 10; wherein, the first functional layer 70 may include at least one of a hole injection layer, a hole transport layer and an electron blocking layer.

[0064] For example, the first functional layer 70 may include a hole injection layer and a hole transport layer, and the hole transport layer is located between the hole injection layer and the auxiliary layer 20, and the auxiliary layer 20 is disposed on the side of the hole transport layer away from the hole injection layer.

[0065] Alternatively, the first functional layer 70 may include a hole injection layer, a hole transport layer, and an electron blocking layer, wherein the hole transport layer is located on the side of the hole injection layer away from the first electrode layer 10, the electron blocking layer is located on the side of the hole transport layer away from the first electrode layer 10, and the auxiliary layer 20 is disposed on the side of the electron blocking layer away from the hole transport layer.

[0066] Alternatively, the first functional layer 70 may include a hole transport layer and an electron blocking layer, with the electron blocking layer located on the side of the hole transport layer away from the first electrode layer 10, and the auxiliary layer 20 disposed on the side of the electron blocking layer away from the hole transport layer.

[0067] In some embodiments, the first functional layer 70 is located at least between the auxiliary portion 21 and the first electrode 11, that is, the first functional layer 70 may be located within the pixel opening and between the auxiliary portion 21 and the first electrode 11; or, the first functional layer 70 may cover the entire surface of the pixel definition layer 60 and extend into the pixel opening, and the first functional layer 70 within the pixel opening is located between the auxiliary portion 21 and the first electrode 11.

[0068] It is understood that in some embodiments, the display panel further includes a second functional layer disposed between the light-emitting layer 30 and the second electrode layer 40. The second functional layer may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer. When the second functional layer may include a hole blocking layer, an electron transport layer, and an electron injection layer, the hole blocking layer is located on the side of the light-emitting layer 30 away from the auxiliary layer 20, the electron transport layer is located on the side of the hole blocking layer away from the light-emitting layer 30, and the electron injection layer is located on the side of the electron transport layer away from the hole blocking layer.

[0069] In this embodiment, the auxiliary part 21 is located on the surface of the first functional layer 70 away from the array substrate 50, while the light-emitting part 31 is located on the surface of the auxiliary part 21 away from the first functional layer 70.

[0070] The auxiliary part 21 includes a first material, and the light-emitting part 31 includes a plurality of quantum dots 32 and a connecting structure 33 connecting the quantum dots 32. The connecting structure 33 includes the first material replaced by a cross-linking structure 331. The connecting structure 33 is connected to the quantum dots 32 through the cross-linking structure 331. Therefore, the first material in the auxiliary part 21 is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31 is avoided. This reduces the adhesion between the auxiliary part 21 and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31, avoids the phenomenon of the light-emitting layer 30 remaining in non-preset areas during the patterning process, improves the color gamut of the display panel, and enhances the display effect of the display panel.

[0071] In some embodiments, the adhesive force between the auxiliary part 21 and the first functional layer 70 is less than the adhesive force between the auxiliary part 21 and the light-emitting part 31; thereby facilitating the peeling of the auxiliary part 21 from the first functional layer 70 and reducing the residual phenomenon of the light-emitting layer 30 during the patterning process.

[0072] Specifically, in some embodiments, the light-emitting layer 30 includes a first light-emitting part 311, a second light-emitting part 312, and a third light-emitting part 313. The quantum dots in the first light-emitting part 311, the quantum dots in the second light-emitting part 312, and the quantum dots in the third light-emitting part 313 are selected from any one of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots in the first light-emitting part 311, the quantum dots in the second light-emitting part 312, and the quantum dots in the third light-emitting part 313 are all different from each other.

[0073] It should be noted that the first light-emitting part 311, the second light-emitting part 312, and the third light-emitting part 313 are each selected as quantum dots of different colors. For example, the first light-emitting part 311 is selected as a red quantum dot, the second light-emitting part 312 is selected as a green quantum dot, and the third light-emitting part 313 is selected as a blue quantum dot, thereby enabling the full-color display of the display panel.

[0074] The auxiliary layer 20 includes a first auxiliary portion 211 located between the first electrode 11 and the first light-emitting portion 311, a second auxiliary portion 212 located between the first electrode 11 and the second light-emitting portion 312, and a third auxiliary portion 213 located between the first electrode 11 and the third light-emitting portion 313. The first material in the first auxiliary portion 211, the first material in the second auxiliary portion 212, and the first material in the third auxiliary portion 213 are selected from the same or different first materials.

[0075] In this embodiment, during the fabrication of the first light-emitting part 311, an auxiliary material layer can be formed at least within each pixel opening. For example, a first auxiliary part 211 can be formed within a preset pixel opening corresponding to the first light-emitting part 311, and an etchable auxiliary part 210 can be formed within other non-preset pixel openings. The etchable auxiliary part 210 and the first auxiliary part 211 are formed in the same process. Then, a full-layer first light-emitting material layer is formed on the pixel definition layer 60 and the auxiliary material layer. Within the preset pixel opening, the first light-emitting material layer is located on the first auxiliary part 211, and within the non-preset pixel opening, the first light-emitting material layer is located on the etchable auxiliary part 210. The first light-emitting material layer may include a plurality of quantum dots 32 and... The connection structure 33 connecting the quantum dots 32 allows the first light-emitting material layer to undergo a cross-linking reaction during film formation. Next, the first light-emitting material layer is patterned to remove the first light-emitting material layer and the etchable auxiliary portion 210 from the non-preset pixel opening, and to form the first light-emitting portion 311 within the preset pixel opening. Since the first material in the etchable auxiliary portion 210 is not cross-linked, and cross-linking between the first material and the first functional layer 70 is avoided, the adhesion between the auxiliary portion 21 and the first functional layer 70 is reduced. This prevents the first light-emitting material layer from remaining in non-preset areas during patterning, improves the color gamut of the display panel, and enhances the display effect of the display panel.

[0076] It is understood that the subsequent fabrication processes of the second light-emitting part 312 and the third light-emitting part 313 can be carried out with reference to the fabrication process of the first light-emitting part 311, and the material of the second light-emitting part 312 and the third light-emitting part 313 can also be kept away from the non-preset pixel opening, so as to improve the color gamut in the display panel and improve the display effect of the display panel.

[0077] In some embodiments, the first material comprises at least one of the following compounds:

[0078] ((1E,4E)-1,5-bis(2,3,5,6-tetrafluorophenyl)pentan-1,4-dien-3-one), (ethylene bis(2,3,5,6-tetrafluorobenzoate)) ((3E,5E)-3,5-bis(2,3,5,6-tetrafluorobenzyl)-1-methylpiperidin-4-one), (3,3'-(4,4'-(perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-propidium(4)).

[0079] In some embodiments, the connection structure 33 includes at least one of the following structures:

[0080] Wherein, * indicates a connection site, and the crosslinking structure 331 can be formed by crosslinking at least one unsaturated bond selected from azide groups, bisacrididine groups, carbon-carbon double bonds, and carbon-carbon triple bonds; and the first material does not have the crosslinking structure 331 relative to the connection structure 33, so that crosslinking will not occur during the film formation process of the auxiliary part 21, and the auxiliary part 21 will not be crosslinked with the first functional layer 70, so that the auxiliary part 21 is easy to remove during the patterning process, reducing the material residue of the light-emitting layer 30.

[0081] It should be noted that the auxiliary part 21 does not contain the quantum dot 32; if the auxiliary part 21 contains the quantum dot 32, it will increase the thickness of the film layer with the quantum dot 32 stacked in the display panel, resulting in an increase in the driving voltage of the display panel. Therefore, in this embodiment, the auxiliary part 21 does not contain the quantum dot 32, which can ensure that the display panel operates at a suitable or smaller driving voltage.

[0082] In some embodiments, the crosslinking structure 331 replaces hydrogen atoms in the first material, for example, it may replace hydrogen atoms located on both sides of the benzene rings in the first material, or replace hydrogen atoms located on both sides of the alkyl chains in the first material.

[0083] In some embodiments, the quantum dot 32 includes a quantum dot body 321 and a second material 322 connected to the quantum dot body 321. The second material 322 is selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms. The modification of the quantum dot body 321 with the second material 322 can improve the uniformity of the distribution and crosslinking of the quantum dots 32 in the light-emitting layer 30. The quantum dots 32 are connected to the connecting structure 33 through the second material 322, and the substituents in the second material 322 can be the same as those in the crosslinking structure 331. For example, they can be formed by crosslinking at least one unsaturated bond selected from azide groups, bis(acrylidine) groups, carbon-carbon double bonds, and carbon-carbon triple bonds.

[0084] In some embodiments, the auxiliary layer 20 further includes a third material selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms; the substituents in the third material may include amino groups; it is understood that, in the process, the material of the auxiliary layer 20 can be considered as the material of the light-emitting layer 30 obtained by removing the quantum dots 32 and crosslinking groups.

[0085] Continuing from the above, this embodiment adds an auxiliary part 21 between the light-emitting part 31 and the first electrode 11. The first material in the auxiliary part 21 does not have the cross-linking structure 331 relative to the light-emitting part 31. Therefore, the first material in the auxiliary part 21 is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31 is avoided. This reduces the adhesion between the auxiliary part 21 and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31. Since the auxiliary part 21 is located between the light-emitting part 31 and the first electrode 11, during the patterning process of the light-emitting layer 30, when removing the light-emitting part 31, the same layer material of the light-emitting part 31 and the same layer material of the auxiliary part 21 below can be removed simultaneously. This avoids the phenomenon of the light-emitting layer 30 remaining in non-preset areas during the patterning process, improves the color gamut of the display panel, and enhances the display effect of the display panel.

[0086] In addition, this application embodiment also provides a method for manufacturing a display panel. Referring to Figures 2, 3, 4, 5 and 6 to 10, the method for manufacturing the display panel includes the following steps:

[0087] S10, a first electrode layer 10 is formed, wherein a plurality of first electrodes 11 are formed in the first electrode layer 10.

[0088] S20. An auxiliary layer 20 and a light-emitting layer 30 are formed on one side of the first electrode layer 10. The light-emitting layer is formed on the side of the auxiliary layer 20 away from the first electrode layer. The auxiliary layer 20 has a plurality of auxiliary portions 21 corresponding to the first electrode 11. The light-emitting layer 30 has a plurality of light-emitting portions 31 corresponding to the plurality of auxiliary portions 21. The auxiliary portion 21 is disposed on the side of the corresponding first electrode 11, and the light-emitting portion 31 is disposed on the side of the corresponding auxiliary portion 21 away from the first electrode 11. The auxiliary portion 21 includes a first material. The light-emitting portion 31 includes a plurality of quantum dots 32 and a connecting structure 33 connecting the plurality of quantum dots 32. The connecting structure 33 includes the first material replaced by a cross-linking structure 331. The connecting structure 33 is connected to the quantum dots 32 through the cross-linking structure 331.

[0089] S30, a second electrode layer 40 is formed on the side of the light-emitting layer 30 away from the auxiliary layer 20.

[0090] In one embodiment of this application, the step of forming an auxiliary layer and a light-emitting layer on one side of the first electrode layer includes:

[0091] The auxiliary material layer is formed using the first material, wherein the first material is selected from at least one of the following compounds:

[0092] A first light-emitting material layer is formed on the side of the auxiliary material layer away from the first electrode layer;

[0093] A first light-emitting portion and a light-emitting portion to be etched are formed in the first light-emitting material layer. The auxiliary material layer includes a first auxiliary portion located between the first light-emitting portion and the first electrode, and an etchable auxiliary portion located between the light-emitting portion to be etched and the first electrode.

[0094] Remove the light-emitting part to be etched and the auxiliary part to be etched.

[0095] In one embodiment of this application, the step of forming a first light-emitting material layer on the side of the auxiliary material layer away from the first electrode layer includes:

[0096] The first luminescent material layer is formed by reacting the quantum dots and crosslinking materials. The crosslinking materials are selected from the first material substituted with crosslinking groups, and the crosslinking groups are selected from at least one of azide groups, bisacrididine groups, carbon-carbon double bonds, and carbon-carbon triple bonds.

[0097] In one embodiment of this application, the crosslinking material includes at least one of the following compounds;

[0098] Specifically, in step S10, an array substrate 50 is first provided.

[0099] Next, a first electrode layer 10 is formed on the array substrate 50, and a plurality of first electrodes 11 are formed in the first electrode layer 10.

[0100] In step S20, a pixel definition layer 60 is formed on the array substrate 50. The pixel definition layer 60 has a plurality of pixel openings, and each pixel opening corresponds to one of the first electrodes 11 to expose the surface of the corresponding first electrode 11, as shown in FIG6.

[0101] In some embodiments, the display panel further includes a first functional layer 70 formed within the pixel opening, the first functional layer 70 being located on the side of the first electrode layer 10 away from the array substrate 50; wherein the first functional layer 70 may include at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.

[0102] Next, an auxiliary material layer is formed at least in each of the pixel openings, and the auxiliary material layer includes a first auxiliary portion 211 located in a preset pixel opening and an auxiliary portion 210 to be etched located in a non-preset pixel opening, as shown in FIG7.

[0103] In some embodiments, the first functional layer 70 may include a hole injection layer and a hole transport layer, wherein the hole transport layer is located between the hole injection layer and the auxiliary layer 20, and the auxiliary material layer is disposed on the side of the hole transport layer away from the hole injection layer.

[0104] In some embodiments, the first functional layer 70 includes a hole injection layer, a hole transport layer, and an electron blocking layer, wherein the hole transport layer is located on the side of the hole injection layer away from the first electrode layer 10, the electron blocking layer is located on the side of the hole transport layer away from the first electrode layer 10, and the auxiliary material layer is disposed on the side of the electron blocking layer away from the hole transport layer.

[0105] In some embodiments, the first functional layer 70 includes a hole transport layer and an electron blocking layer, wherein the electron blocking layer is located on the side of the hole transport layer away from the first electrode layer 10, and the auxiliary material layer is disposed on the side of the electron blocking layer away from the hole transport layer.

[0106] In some embodiments, the first functional layer 70 is located at least between the auxiliary material layer and the first electrode 11, that is, the first functional layer 70 may be located within the pixel opening and between the auxiliary portion 21 and the first electrode 11; or, the first functional layer 70 may cover the entire surface of the pixel definition layer 60 and extend into the pixel opening, and the first functional layer 70 within the pixel opening is located between the auxiliary material layer and the first electrode 11.

[0107] The auxiliary material layer is formed using the first material, wherein the first material is selected from at least one of the following compounds:

[0108] A first light-emitting material layer 310 is formed on the side of the auxiliary material layer away from the first electrode layer 10, as shown in FIG8.

[0109] Specifically, the first luminescent material layer 310 is formed by reacting the quantum dot 32 with a crosslinking material. The crosslinking material is selected from the first material substituted with crosslinking groups, and the crosslinking groups are selected from at least one of azide groups, bisacrididine groups, carbon-carbon double bonds, and carbon-carbon triple bonds.

[0110] In some embodiments, the crosslinking material includes at least one of the following compounds;

[0111] ((1E,4E)-1,5-bis(4-azido-2,3,5,6-tetrafluorophenyl)pentan-1,4-dien-3-one), (ethylene bis(4-azido-2,3,5,6-tetrafluorobenzoate)) ((3E,5E)-3,5-bis(4-azido-2,3,5,6-tetrafluorobenzyl)-1-methylpiperidin-4-one), (3,3'-(4,4'-(perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-diazolicid(4)).

[0112] The first light-emitting material layer 310 is photo-treated using a mask 80. After photo-treatment, the first light-emitting material layer 310 corresponding to the first region in the mask 80 forms the first light-emitting part 311. After photo-treatment, the first light-emitting material layer 310 corresponding to the second region in the mask 80 forms the light-emitting part 3101 to be etched. The auxiliary material layer includes a first auxiliary part 211 located between the first light-emitting part 311 and the first electrode 11, and an etchable auxiliary part 210 located between the light-emitting part 3101 to be etched and the first electrode 11. The etchable auxiliary part 210 is located in a non-preset opening, as shown in FIG9.

[0113] In the mask 80, the first region and the second region have different transmittance. For example, the transmittance of the first region is greater than that of the second region, or the first region is transparent while the second region is opaque.

[0114] Next, the light-emitting part 3101 to be etched and the auxiliary part 210 to be etched can be removed to form a first auxiliary part 211 located in the preset pixel opening and a first light-emitting part 311 located on the side of the first auxiliary part 211 away from the first electrode 11, as shown in FIG10.

[0115] It should be noted that within the non-preset pixel opening, the first light-emitting material layer 310 is located on the etchable auxiliary part 210; wherein, the first light-emitting material layer 310 may include a plurality of quantum dots 32 and a connection structure 33 connecting the quantum dots 32, and thus the first light-emitting material layer 310 undergoes a cross-linking reaction during the film formation process; while the first material in the etchable auxiliary part 210 is not cross-linked, and cross-linking between the first material and the first functional layer 70 is avoided, reducing the adhesion between the etchable auxiliary part 210 and the first functional layer 70, avoiding the phenomenon of the first light-emitting material layer 310 remaining in the non-preset area during the patterning process, improving the color gamut of the display panel, and improving the display effect of the display panel.

[0116] In some embodiments, during the removal of the light-emitting portion 3101 to be etched and the auxiliary portion 210 to be etched, ultrasonic cleaning (USC) combined with development is used to further reduce the risk of residue of the first light-emitting material layer 310.

[0117] It is understood that the subsequent fabrication processes of the second light-emitting part 312 and the third light-emitting part 313 can refer to the fabrication process of the first light-emitting part 311. That is, first, an auxiliary material layer is formed, and then a second light-emitting material layer or a third light-emitting material layer is formed on the auxiliary material layer. Then, when removing the second light-emitting material layer and the third light-emitting material layer from the non-preset pixel opening, the second light-emitting material layer and the third light-emitting material layer can be removed together with the auxiliary material layer below. This also avoids the second light-emitting material layer and the third light-emitting material layer remaining in the non-preset pixel opening, thereby improving the color gamut in the display panel and enhancing the display effect of the display panel.

[0118] Referring to the above process, the second light-emitting part 312 and the third light-emitting part 313 are formed sequentially. Correspondingly, the second auxiliary part 212 is formed between the second light-emitting part 312 and the first electrode 11, and the third auxiliary part 213 is formed between the third light-emitting part 313 and the first electrode 11. The first light-emitting part 311, the second light-emitting part 312, and the third light-emitting part 313 constitute the light-emitting layer 30, and the first auxiliary part 211, the second auxiliary part 212, and the third auxiliary part 213 constitute the auxiliary layer 20.

[0119] In step S30, a second electrode layer 40 is formed on the side of the light-emitting layer 30 away from the auxiliary layer 20, and the second electrode layer 40 covers the pixel definition layer 60 and the plurality of light-emitting parts 31.

[0120] In this embodiment, by adding an auxiliary part 21 between the light-emitting part 31 and the first electrode 11, and by not providing the cross-linking structure 331 for the first material in the auxiliary part 21 relative to the light-emitting part 31, the first material in the auxiliary part 21 is not cross-linked, thus preventing cross-linking between the first material and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31. This reduces the adhesion between the auxiliary part 21 and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31. Since the auxiliary part 21 is located between the light-emitting part 31 and the first electrode 11, during the patterning process of the light-emitting layer 30, when removing the light-emitting part 31, the same layer material of the light-emitting part 31 and the same layer material of the auxiliary part 21 below can be removed simultaneously. This avoids the phenomenon of the light-emitting layer 30 remaining in non-preset areas during the patterning process, improves the color gamut of the display panel, and enhances the display effect of the display panel.

[0121] In addition, this application embodiment also provides a display device, which includes the display panel described in the above embodiments, or a display panel manufactured using the manufacturing method of the display panel described in the above embodiments.

[0122] It is understood that since the display device has the same display panel as in the above embodiments, the display device has the same beneficial effects as the display panel, which will not be elaborated here.

[0123] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0124] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0125] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0126] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A display panel comprising: The first electrode layer includes a plurality of first electrodes; An auxiliary layer is disposed on one side of the first electrode layer. The auxiliary layer includes a plurality of auxiliary parts disposed corresponding to a plurality of first electrodes, and the auxiliary parts are disposed on one side of the corresponding first electrodes. A light-emitting layer is disposed on the side of the auxiliary layer away from the first electrode layer. The light-emitting layer includes a plurality of light-emitting portions disposed corresponding to the plurality of auxiliary portions. The light-emitting portions are disposed on the side of the corresponding auxiliary portion away from the first electrode. The second electrode layer is disposed on the side of the light-emitting layer away from the auxiliary layer; The auxiliary part includes a first material, and the light-emitting part includes a plurality of quantum dots and a connection structure connecting the plurality of quantum dots. The connection structure includes the first material replaced by a cross-linked structure, and the connection structure is connected to the quantum dots through the cross-linked structure.

2. The display panel according to claim 1, wherein, The first material includes at least one of the following compounds:

3. The display panel according to claim 2, wherein, The connection structure includes at least one of the following structures: In this context, * indicates a connection site.

4. The display panel according to any one of claims 1 to 3, wherein, The cross-linked structure replaces hydrogen atoms in the first material.

5. The display panel according to claim 1 or 2, wherein, The light-emitting layer includes a first light-emitting part, a second light-emitting part, and a third light-emitting part. The quantum dots in the first light-emitting part, the quantum dots in the second light-emitting part, and the quantum dots in the third light-emitting part are selected from any one of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots in the first light-emitting part, the quantum dots in the second light-emitting part, and the quantum dots in the third light-emitting part are all different from each other. The auxiliary layer includes a first auxiliary portion located between the first electrode and the first light-emitting portion, a second auxiliary portion located between the first electrode and the second light-emitting portion, and a third auxiliary portion located between the first electrode and the third light-emitting portion. The first material in the first auxiliary portion, the first material in the second auxiliary portion, and the first material in the third auxiliary portion are selected from the same or different first materials.

6. The display panel according to claim 1, wherein, The quantum dot includes a quantum dot body and a second material attached to the quantum dot body, the second material being selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

7. The display panel according to claim 1 or 6, wherein, The auxiliary layer further includes a third material selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

8. The display panel according to claim 1, wherein, The display panel further includes a first functional layer, which is located at least between the auxiliary part and the first electrode, and the adhesive force between the auxiliary part and the first functional layer is less than the adhesive force between the auxiliary part and the light-emitting part.

9. A method for manufacturing a display panel, the method comprising the following steps: A first electrode layer is formed, and a plurality of first electrodes are formed in the first electrode layer; An auxiliary layer and a light-emitting layer are formed on one side of the first electrode layer. The light-emitting layer is formed on the side of the auxiliary layer away from the first electrode layer. The auxiliary layer has multiple auxiliary portions corresponding to multiple first electrodes. The light-emitting layer has multiple light-emitting portions corresponding to multiple auxiliary portions. The auxiliary portions are disposed on one side of their corresponding first electrodes, and the light-emitting portions are disposed on the side of their corresponding auxiliary portions away from the first electrodes. Each auxiliary portion includes a first material. Each light-emitting portion includes multiple quantum dots and a connecting structure connecting the multiple quantum dots. The connecting structure includes the first material replaced by a cross-linked structure, and the connecting structure is connected to the quantum dots through the cross-linked structure. A second electrode layer is formed on the side of the light-emitting layer away from the auxiliary layer.

10. The method for manufacturing a display panel according to claim 9, wherein, The step of forming an auxiliary layer and a light-emitting layer on one side of the first electrode layer includes: The auxiliary material layer is formed using the first material, wherein the first material is selected from at least one of the following compounds: A first light-emitting material layer is formed on the side of the auxiliary material layer away from the first electrode layer; A first light-emitting portion and a light-emitting portion to be etched are formed in the first light-emitting material layer. The auxiliary material layer includes a first auxiliary portion located between the first light-emitting portion and the first electrode, and an etchable auxiliary portion located between the light-emitting portion to be etched and the first electrode. Remove the light-emitting part to be etched and the auxiliary part to be etched.

11. The method for manufacturing a display panel according to claim 10, wherein, The step of forming a first light-emitting material layer on the side of the auxiliary material layer away from the first electrode layer includes: The first luminescent material layer is formed by reacting the quantum dots and crosslinking materials. The crosslinking materials are selected from the first material substituted with crosslinking groups, and the crosslinking groups are selected from at least one of azide groups, bisacrididine groups, carbon-carbon double bonds, and carbon-carbon triple bonds.

12. The method for manufacturing a display panel according to claim 11, wherein, The crosslinking material includes at least one of the following compounds; 13. A display device, the display device comprising a display panel, the display panel comprising: The first electrode layer includes a plurality of first electrodes; An auxiliary layer is disposed on one side of the first electrode layer. The auxiliary layer includes a plurality of auxiliary parts disposed corresponding to a plurality of first electrodes, and the auxiliary parts are disposed on one side of the corresponding first electrodes. A light-emitting layer is disposed on the side of the auxiliary layer away from the first electrode layer. The light-emitting layer includes a plurality of light-emitting portions disposed corresponding to the plurality of auxiliary portions. The light-emitting portions are disposed on the side of the corresponding auxiliary portion away from the first electrode. The second electrode layer is disposed on the side of the light-emitting layer away from the auxiliary layer; The auxiliary part includes a first material, and the light-emitting part includes a plurality of quantum dots and a connection structure connecting the plurality of quantum dots. The connection structure includes the first material replaced by a cross-linked structure, and the connection structure is connected to the quantum dots through the cross-linked structure.

14. The display device according to claim 13, wherein, The first material includes at least one of the following compounds:

15. The display device according to claim 14, wherein, The connection structure includes at least one of the following structures: In this context, * indicates a connection site.

16. The display device according to any one of claims 13 to 15, wherein, The cross-linked structure replaces hydrogen atoms in the first material.

17. The display device according to claim 13 or 14, wherein, The light-emitting layer includes a first light-emitting part, a second light-emitting part, and a third light-emitting part. The quantum dots in the first light-emitting part, the quantum dots in the second light-emitting part, and the quantum dots in the third light-emitting part are selected from any one of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots in the first light-emitting part, the quantum dots in the second light-emitting part, and the quantum dots in the third light-emitting part are all different from each other. The auxiliary layer includes a first auxiliary portion located between the first electrode and the first light-emitting portion, a second auxiliary portion located between the first electrode and the second light-emitting portion, and a third auxiliary portion located between the first electrode and the third light-emitting portion. The first material in the first auxiliary portion, the first material in the second auxiliary portion, and the first material in the third auxiliary portion are selected from the same or different first materials.

18. The display device according to claim 13, wherein, The quantum dot includes a quantum dot body and a second material attached to the quantum dot body, the second material being selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

19. The display device according to claim 13 or 18, wherein, The auxiliary layer further includes a third material selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

20. The display device according to claim 13, wherein, The display panel further includes a first functional layer, which is located at least between the auxiliary part and the first electrode, and the adhesive force between the auxiliary part and the first functional layer is less than the adhesive force between the auxiliary part and the light-emitting part.

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