Chemical etching system and etching method based on dynamic control

Abstract

The invention discloses a chemical etching system based on dynamic control and an etching method. The chemical etching system based on dynamic control comprises an etching tank, a mounting structure, a sensor module, a liquid supplementing structure and a control module, the etching groove is provided with a cavity for accommodating etching liquid; the mounting structure is arranged in the cavity and is provided with a plurality of mounting stations for fixing workpieces to be etched along the circumferential direction; the sensor module comprises a plurality of sensor units arranged on the mounting structure, and each sensor unit is located between two adjacent mounting stations; the liquid discharging end of the liquid supplementing structure is communicated with the cavity of the etching groove, and the liquid supplementing structure is used for supplementing etching liquid into the etching groove; according to the invention, aiming at the problems of concentration attenuation, temperature fluctuation, uneven areas and the like in a traditional chemical etching method, real-time sensing and accurate regulation and control of multi-dimensional parameters in the etching groove are realized through the synergistic effect of the distributed sensor network and the dynamic liquid supplementing device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of glass substrate processing, in particular to a chemical etching system based on dynamic control and an etching method. BACKGROUND

[0002] Chemical etching is a process that uses etching solution to isotropically or anisotropically corrode materials, thereby achieving separation, thinning or shaping. In the processing of brittle materials such as glass substrates, flexible glass (UTG), sapphire substrates, etc., chemical etching has the advantages of no stress and no micro-cracks. However, the traditional chemical etching method has significant drawbacks: usually the workpiece is soaked in etching solution of fixed concentration, and the etching depth is controlled by the preset soaking time. This method ignores the problems of concentration decay due to consumption of active components of etching solution, temperature fluctuations in the tank, and concentration and temperature unevenness in different areas of the tank due to fluid dynamics effects during the processing. As a result, the etching rate is unstable, the etching depth of different stations or even different areas of the same workpiece is inconsistent, the product yield is low, and the etching solution cannot be replenished as needed, but only can be replaced as a whole regularly, resulting in high production cost and serious environmental pollution.

[0003] Some improvements have been made in the prior art. For example, Chinese Patent No. CN102557465A discloses a device for etching a glass substrate, which includes a container configured to hold an etchant, a first plate located in the container and configured to receive a horizontally placed glass substrate on the first plate, and a circulation unit located in the container and facing the first plate and configured to generate a flow of etchant on the face of the first plate. This scheme improves the uniformity of etchant distribution on the glass surface to some extent by forced flow.

[0004] However, the flow generated by the circulation unit in this scheme lacks precise directional control and is difficult to adjust specifically to the specific parameter deviations of different installation station areas. When the etching solution concentration, temperature and other parameters at different positions in the tank differ greatly, only this overall forced flow cannot achieve accurate regulation of each area. SUMMARY

[0005] The present application aims to overcome the above technical deficiencies and proposes a chemical etching system based on dynamic control and an etching method to solve the technical problem of large parameter difference of etching solution in different areas during the etching process in the prior art and the difficulty of accurate regulation.

[0006] To achieve the above technical purpose, the present application adopts the following technical solution: In a first aspect, the present invention provides a chemical etching system based on dynamic control, comprising an etching tank, a mounting structure, a sensor module, a liquid replenishment structure, and a control module; the etching tank has a cavity for containing etching liquid; the mounting structure is disposed within the cavity and has multiple mounting positions arranged circumferentially for fixing the workpiece to be etched; the sensor module includes multiple sensor units arranged on the mounting structure, each sensor unit being located between two adjacent mounting positions; the liquid replenishment structure has its drain end connected to the cavity of the etching tank and corresponding to each of the mounting positions, for replenishing etching liquid into the etching tank; the control module is connected to the sensor module and the liquid replenishment structure, for adjusting the liquid discharge of the liquid replenishment structure toward the etching tank based on the monitoring data of the sensor module.

[0007] In some embodiments, each of the sensor units includes a plurality of sensor components distributed along the height direction of the etched groove, and each of the sensor components includes a plurality of sensor groups distributed along the radial direction of the etched groove.

[0008] In some embodiments, the number of sensor units is equal to the number of installation stations; both the sensor assembly and the sensor group are provided in at least three groups.

[0009] In some embodiments, the sensor group includes one or more of the following: a concentration sensor for detecting the concentration of the etching solution, a temperature sensor for detecting the temperature of the etching solution, and a level sensor for detecting the liquid level.

[0010] In some embodiments, the dynamic control-based chemical etching system further includes a stirring structure installed in the etching tank, with its stirring end positioned on the geometric central axis of the cavity for stirring the etching solution in the etching tank.

[0011] In some embodiments, the liquid replenishment structure includes an annular pipe and a plurality of nozzles. The annular pipe is disposed at the bottom of the mounting structure and is arranged along the annular direction of the mounting positions. The plurality of nozzles are evenly distributed on the annular pipe and are respectively disposed corresponding to each of the mounting positions. The drain port of each nozzle faces the space between two mounting positions inside the etching tank.

[0012] In some embodiments, the spray axis of each nozzle forms an acute angle equal to the annular tangent direction of the etching groove, and its spray direction is consistent with the rotational stirring direction of the stirring structure.

[0013] In some embodiments, the chemical etching system based on dynamic control further includes a heating structure, which includes a plurality of heating units arranged sequentially along the height direction of the etching groove, and the heating units are all arranged circumferentially around the mounting structure.

[0014] Secondly, the present invention also provides an etching method, comprising a dynamically controlled chemical etching system as described in any one of the preceding claims, comprising the following steps: Install the workpiece to be etched and begin the chemical etching process; The sensor module is used to monitor the etching fluid parameters at different locations in the etching tank in real time, and the monitoring data is transmitted to the control module. The control module calculates the deviation between the parameters at different spatial locations and the set values ​​based on the received monitoring data, and controls the fluid replenishment structure to replenish etching fluid to the corresponding installation station area according to the deviation.

[0015] In some embodiments, the method further includes the step of: controlling the rotational speed of the stirring structure and / or the power of each independent heating unit of the heating structure based on the calculation results of the control module; The control of the stirring structure includes: increasing the rotation speed of the stirring structure when the concentration uniformity detected by different radial position sensor units exceeds a preset range; and decreasing the rotation speed of the stirring structure when the concentration uniformity detected by different radial position sensor units does not exceed the preset range. Controlling the heating structure includes: increasing the power of the heating unit in the corresponding axial height region when the temperature difference detected by different axial height sensor units exceeds a preset threshold; and maintaining or decreasing the power of the heating unit in the corresponding axial height region when the temperature difference detected by different axial height sensor units does not exceed the preset threshold.

[0016] Compared with existing technologies, the chemical etching system and method based on dynamic control provided by this invention constructs a closed-loop control system based on real-time data by deploying sensor modules across multiple workstations and linking them with a point-to-point replenishment structure. This achieves precision and intelligence in the etching process. The system can perceive the parameter distribution in the multi-dimensional space within the tank in real time and make data-driven decisions to adjust the etching solution state in each area in a timely manner, ensuring that the glass substrate at each installation station can be etched under optimal conditions. Simultaneously, this solution adopts an on-demand replenishment mode, effectively avoiding etching solution waste and significantly reducing production costs. This mode enables the system to automatically adapt to various operating condition disturbances, ensuring long-term and stable process repeatability and providing a solid guarantee for large-scale industrial production. Attached Figure Description

[0017] Figure 1This is a three-dimensional structural schematic diagram of a chemical etching system based on dynamic control provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the front cross-sectional structure of a chemical etching system based on dynamic control provided in an embodiment of the present invention; Figure 3 This is a top-view cross-sectional structural diagram of a chemical etching system based on dynamic control provided in an embodiment of the present invention; Figure 4 yes Figure 2 Enlarged structural diagram at point A in the middle; Figure 5 This is a schematic diagram of the stirring structure of the chemical etching system based on dynamic control provided in an embodiment of the present invention; Figure 6 This is a schematic diagram of the liquid replenishment structure of the chemical etching system based on dynamic control provided in an embodiment of the present invention; Figure 7 This is a flowchart of the etching method provided in an embodiment of the present invention.

[0018] Explanation of reference numerals in the attached figures: 1. Etching tank; 11. Fixed cover; 12. Movable cover; 2. Mounting structure; 3. Sensor module; 31. Concentration sensor; 32. Temperature sensor; 33. Liquid level sensor; 4. Liquid replenishment structure; 41. Annular pipe; 42. Nozzle; 43. Connecting pipe; 5. Stirring structure; 51. Motor; 52. Central shaft; 53. Spiral blade; 54. Connecting rod; 6. Heating structure; 61. Heating unit; 7. Glass substrate. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0020] To address the technical problem of large differences in etching solution parameters in different regions during the etching process and the difficulty in achieving precise control in existing technologies, this invention provides a chemical etching system and method based on dynamic control. It can solve the problems of concentration decay, temperature fluctuation and regional unevenness in traditional chemical etching methods by using the synergistic effect of a distributed sensor network and a dynamic replenishment device to achieve real-time perception and precise control of multi-dimensional parameters in the etching tank.

[0021] It should be noted that the chemical etching system and etching method based on dynamic control described in this invention are applied to, but not limited to, glass substrate etching. For ease of explanation, this invention will only use the application of the chemical etching system and etching method based on dynamic control to glass substrate etching as an example. The principle of applying the chemical etching system and etching method based on dynamic control to the etching of other types of parts is essentially the same as that applied to glass substrate etching, and will not be elaborated here.

[0022] Please see Figures 1 to 3 In a first aspect, embodiments of this application provide a chemical etching system based on dynamic control, including an etching tank 1, a mounting structure 2, a sensor module 3, a liquid replenishment structure 4, and a control module. The etching tank 1 is an annular container with a cavity for containing etching liquid. The mounting structure 2 is disposed within the cavity and has multiple mounting positions along the circumference for fixing the workpiece to be etched. The sensor module 3 includes multiple sensor units arranged on the mounting structure 2, each sensor unit being located between two adjacent mounting positions. The liquid replenishment structure 4 has its drain end connected to the cavity of the etching tank 1 and corresponds to each mounting position, for replenishing etching liquid into the etching tank 1. The control module is connected to the sensor module 3 and the liquid replenishment structure 4 to adjust the liquid discharge of the liquid replenishment structure 4 toward the etching tank 1 based on the monitoring data of the sensor module 3.

[0023] In this device, the etching tank 1 has a cavity for containing the etching solution. The glass substrate 7 to be etched can be fixed to the mounting station by the mounting structure 2, ensuring stable position during the etching process. Multiple sensor units of the sensor module 3 can monitor the state of the etching solution near each mounting station in real time during the etching process, such as key parameters like the concentration and temperature of the etching solution. The replenishment structure 4, according to the instructions of the control module, precisely replenishes the etching solution to the area of ​​the etching tank 1 where the corresponding mounting station is located, ensuring that the etching solution is always under suitable etching conditions. The control module receives the monitoring data from the sensor module 3, and after rapid analysis and processing, promptly issues instructions to the replenishment structure 4 to adjust the drainage, thereby realizing a dynamically controlled chemical cutting process and effectively improving the accuracy and efficiency of chemical cutting.

[0024] To improve the uniformity of the etching solution in etching tank 1 after replenishment and during etching operations, please refer to... Figures 1 to 3 In some possible embodiments, a stirring structure 5 is also installed at the top center of the etching tank 1. The stirring structure 5 is installed in the etching tank 1, and its stirring end is set on the geometric center axis 52 of the cavity. It is used to stir the etching liquid in the etching tank 1. By rotating, a stirring force is generated, so that the etching liquid in the etching tank 1 forms an orderly flow, so that the etching liquid is evenly distributed in the etching tank 1, avoiding the occurrence of local concentrations that are too high or too low.

[0025] Please see Figures 1 to 3 ,Figure 5 In one specific embodiment, the stirring structure 5 includes a motor 51, a central shaft 52, and a spiral blade 53. The motor 51 serves as a power source and is mounted on a fixed cover 11 at the top of the etching tank 1. The fixed cover 11 is fixedly connected to the tank body of the etching tank 1 via a connecting bracket. The central shaft 52 is vertically mounted at the middle position at the top of the etching tank 1, with its lower end extending to the annular cavity. The spiral blade 53 is fixed to the outside of the central shaft 52 via a connecting rod 54 and is arranged in a spiral shape. When the motor 51 drives the central shaft 52 to rotate, the spiral blade 53 rotates accordingly, fully stirring the etching solution in the etching tank 1. This causes the etching solution to form a uniform vortex flow in the cavity, further enhancing the uniformity of the etching solution in the etching tank 1 and ensuring that the etching conditions of each part are highly consistent during the chemical cutting process, thereby improving the quality and stability of the chemical cutting.

[0026] It should be noted that you should refer to [link / reference]. Figure 1 In this design, the mounting structure 2 is a mounting frame with multiple mounting stations evenly distributed on it. Each station is equipped with a dedicated fixing device to firmly secure the workpiece to be etched, preventing displacement or shaking during the etching process. A ring-shaped movable cover 12 is also provided at the top of the etching tank 1. The movable cover 12 is movably mounted on the top of the etching tank 1, its position corresponding to the position of the mounting frame. The movable cover 12 can be opened or closed as needed. When installing the workpiece to be etched, the movable cover 12 is opened to facilitate the placement and fixing of the workpiece by the operator. During the etching process, the movable cover 12 is closed to reduce the evaporation of the etching solution, minimizing its impact on the surrounding environment, and preventing external impurities from entering the etching tank 1, thus avoiding interference with the etching process and ensuring the purity and stability of the chemical cutting process.

[0027] Please see Figures 2 to 4 In some possible embodiments, each sensor unit includes multiple sensor components distributed along the height direction of the etching tank 1, and each sensor component includes multiple sensor groups distributed along the radial direction of the etching tank 1, enabling omnidirectional monitoring of the etching solution from different heights and radial positions. This multi-layered, multi-directional sensor component layout allows for more accurate acquisition of changes in parameters such as the concentration and temperature of the etching solution at different locations within the etching tank 1.

[0028] In one specific embodiment, the number of sensor units is equal to the number of installation stations, and a corresponding arrangement is adopted so that the etching solution state near each installation station can be accurately monitored by the corresponding sensor unit. Furthermore, each sensor unit has three sensor components distributed vertically: upper, middle, and lower, used to monitor parameters at different heights near the liquid surface, the core reaction zone of the workpiece, and the bottom of the tank. The upper sensor component is located approximately 10-15 cm below the liquid surface, providing timely feedback on potential concentration changes of the etching solution at the liquid surface due to contact with air; the middle sensor component focuses on the core reaction zone of the workpiece, accurately determining the actual effect parameters of the etching solution on the workpiece at this location; the lower sensor component is located 10-15 cm above the bottom of the tank, monitoring for sediment accumulation or temperature stratification to prevent factors such as bottom sedimentation from affecting the overall performance of the etching solution. Simultaneously, each height's sensor component is further arranged with sensor groups in three radial positions: inner ring, middle ring, and outer ring. This allows for detailed capture of the etching solution state differences at different radial positions within the etching tank 1. The inner ring sensor group is installed near the stirring structure 5 to monitor the state of the etching solution immediately output from the stirring center. The middle ring sensor group is installed in the middle section of the glass substrate mounting station 7, which is the most critical point directly reflecting the status of the working area. The outer ring sensor group is installed near the tank wall to monitor the boundary layer where the flow rate is slower and concentration or temperature lags may occur. In this way, a dense "three-ring, three-layer" three-dimensional monitoring network is formed, which can provide real-time feedback on the parameter information of the etching solution at any point in the entire processing chamber.

[0029] Please see Figure 4 In some possible embodiments, the sensor group includes one or more of the following: a concentration sensor 31 for detecting the concentration of the etching solution, a temperature sensor 32 for detecting the temperature of the etching solution, and a level sensor 33 for detecting the liquid level. The sensor group can be equipped with both the concentration sensor 31 and the temperature sensor 32 simultaneously. This allows for precise monitoring of changes in the etching solution concentration, ensuring it remains within a suitable etching concentration range, while also providing real-time temperature monitoring to prevent excessively high or low temperatures from affecting the etching reaction rate and quality. In embodiments with specific requirements for liquid level control, the sensor group can focus on configuring the level sensor 33. By accurately detecting the liquid level height, it provides timely feedback to the control module, allowing the control module to adjust the discharge volume of the replenishment structure 4 based on the liquid level, ensuring a stable liquid level in the etching tank 1 and preventing excessive liquid level fluctuations from affecting the normal chemical cutting process. This flexible combination of multiple sensors enables the chemical cutting system to better adapt to different types of workpieces and chemical cutting tasks with varying etching requirements, further improving the system's versatility and adaptability.

[0030] In this embodiment, not all sensor groups contain all three types of sensors simultaneously; rather, the configuration is flexibly adjusted based on the actual monitoring focus. Specifically, the middle sensor assembly, being located in the core reaction zone of the workpiece, is extremely sensitive to changes in the etching solution concentration and temperature. Therefore, it is primarily equipped with a concentration sensor 31 and a temperature sensor 32 to accurately capture subtle fluctuations in the etching solution concentration and temperature changes in this area, ensuring that the workpiece receives stable and suitable etching conditions in the core reaction zone. The lower sensor assembly, located above the tank bottom, primarily monitors sediment accumulation and temperature stratification, and has relatively lower requirements for precise liquid level monitoring. Therefore, some lower sensor assemblies are only equipped with a concentration sensor 31 and a temperature sensor 32 to focus on monitoring the etching solution concentration and temperature, preventing factors such as sedimentation at the tank bottom from adversely affecting the overall performance of the etching solution. Of course, some lower sensor assemblies are equipped with a concentration sensor 31, a temperature sensor 32, and a liquid level sensor 33, depending on actual needs, to achieve more comprehensive monitoring. The upper sensor assembly is located below the liquid surface and reacts quickly to changes in the state of the etching solution at the liquid surface. Some of the upper sensor assemblies take into account the frequent contact between the etching solution and air near the liquid surface, resulting in relatively significant concentration changes. In addition to the concentration sensor 31 and temperature sensor 32, a liquid level sensor 33 is also added to the configuration ratio. This allows for more timely and accurate monitoring of subtle changes in the liquid level height while simultaneously monitoring the concentration and temperature, preventing excessive air from entering the etching solution due to liquid surface fluctuations and affecting the etching effect.

[0031] Of course, in other possible implementations, the sensor array can be supplemented with other types of sensors according to actual needs and application scenarios. For example, an ion sensor can be added to detect the concentration of specific ions in the etching solution, and a flow rate sensor can be set to detect the flow rate of the etching solution, etc.

[0032] Please see Figure 2 and Figure 6 In some embodiments, the replenishment structure 4 includes an annular pipe 41 and several nozzles 42. The annular pipe 41 is located at the bottom of the mounting structure 2 and is arranged in an annular direction along the mounting positions. The annular pipe 41 is connected to an external etching solution supply source via a connecting pipe 43 for conveying the etching solution. Several nozzles 42 are evenly distributed on the annular pipe 41, and the spray nozzle of each nozzle 42 is precisely aligned with the area between two mounting positions. The spray axes of all nozzles 42 are at the same acute angle to the tangential direction of the annular groove, so that the newly replenished liquid can form a tangential jet. The tangential jet direction generated by the replenishment nozzles 42 is consistent with the rotational stirring direction of the stirring structure 5. The two work together to push and form a strong, stable, and unidirectional annular vortex in the annular groove, thereby ensuring the extreme uniformity of the etching solution composition and temperature.

[0033] The opening and closing of each nozzle 42 and the flow rate are precisely controlled by valves. Specifically, each nozzle 42 has an independent solenoid valve installed at its inlet. These solenoid valves are connected to the control module and can quickly adjust their opening and closing status and flow rate based on real-time data fed back from the sensor module 3.

[0034] Please see Figure 2 and Figure 3 In some possible embodiments, the heating structure 6 employs zoned control. The heating structure 6 includes several heating units 61, which can be in the form of electric heating tubes or infrared heating plates, etc. These heating units 61 are arranged sequentially along the height of the etching tank 1, and all heating units 61 are arranged circumferentially around the mounting structure 2. Each heating unit 61 is equipped with an independent temperature controller. The control module can precisely control the working state of each heating unit 61 based on the temperature data of different areas fed back by the sensor module 3. For example, when the temperature of a certain area is lower than a set value, the control module will instruct the corresponding heating unit 61 to increase its power for heating; and when the temperature reaches a suitable range, it will reduce the power or stop heating, thereby achieving precise temperature control of different areas within the etching tank 1 and ensuring that the temperature remains within the optimal etching temperature range throughout the entire etching process.

[0035] Please see Figure 7 Secondly, embodiments of this application also provide an etching method, including a dynamically controlled chemical etching system as described in any of the above claims, comprising the following steps: S1. Install the workpiece to be etched and begin the chemical cutting process.

[0036] S2. The sensor module 3 is used to monitor the etching fluid parameters at different locations in the etching tank 1 in real time, and the monitoring data is transmitted to the control module.

[0037] S3. The control module calculates the deviation between the parameters and the set values ​​at different spatial locations based on the received monitoring data, and controls the replenishment structure 4 to replenish etching fluid to the corresponding installation station area according to the deviation.

[0038] In some embodiments, the method further includes the step of: controlling the rotational speed of the stirring structure 5 and / or the power of each independent heating unit 61 of the heating structure 6 based on the calculation results of the control module.

[0039] The stirring structure 5 includes: increasing the rotation speed of the stirring structure 5 when the concentration uniformity detected by the concentration sensor 31 in different radial position sensor units exceeds a preset range; and decreasing the rotation speed of the stirring structure 5 when the concentration uniformity detected by the different radial position sensor units does not exceed the preset range.

[0040] The heating control structure 6 includes: increasing the power of the heating unit 61 in the corresponding axial height region when the temperature difference detected by the temperature sensor 32 in different axial height sensor units exceeds a preset threshold; and maintaining or decreasing the power of the heating unit 61 in the corresponding axial height region when the temperature difference detected by the different axial height sensor units does not exceed the preset threshold.

[0041] During the actual implementation process, when installing the glass substrate 7, it is necessary to ensure that the glass substrate 7 is firmly fixed on the installation position of the installation structure 2. After the workpiece installation is completed, the chemical cutting system is started, and the sensor module 3 immediately starts working. Its sensor units, distributed at different positions and heights in the etching tank 1, continuously collect key parameter information such as the concentration and temperature of the etching solution, and accurately transmit these real-time monitoring data to the control module.

[0042] After receiving data from sensor module 3, the control module quickly performs calculations and analysis, comparing the actual parameters at different spatial locations with the pre-set suitable etching parameter range to accurately determine the parameter deviation at each location. Based on this deviation information, the control module intelligently controls the operation of the fluid replenishment structure 4, ensuring that it precisely replenishes the etching fluid to the corresponding etching tank 1 area, thus maintaining the etching fluid in the optimal etching state at all times.

[0043] When the concentration uniformity detected by the concentration sensor 31 in different radial position sensor units exceeds the preset range, it indicates that the concentration difference of the etching solution at different radial positions in the etching tank 1 is large, which may affect the uniformity of chemical cutting. At this time, the control module will automatically issue a command to increase the rotation speed of the stirring structure 5. The motor 51 of the stirring structure 5 accelerates, driving the central shaft 52 and the spiral blades 53 to rotate rapidly, generating a stronger stirring force, causing the etching solution in the etching tank 1 to form a more vigorous and orderly flow, thereby promoting the full mixing of the etching solution at different radial positions and quickly adjusting the concentration uniformity. When the concentration uniformity detected by the different radial position sensor units does not exceed the preset range, it indicates that the concentration distribution of the etching solution is relatively uniform. At this time, the control module will appropriately reduce the rotation speed of the stirring structure 5 to save energy and reduce unnecessary equipment wear.

[0044] In another implementation, when the concentration uniformity detected by the concentration sensor 31 in different radial position sensor units exceeds a preset range, and the etching solution in the relatively low concentration area has not reached the preset replenishment threshold, the control module will not only increase the rotation speed of the stirring structure 5, but also simultaneously analyze the spatial relationship between the low concentration area and the surrounding area, and predict the concentration diffusion trend through an intelligent algorithm. If the prediction shows that simple stirring cannot restore the concentration uniformity within a specified time, the control module will immediately activate the replenishment structure 4 to accurately inject an appropriate amount of high-concentration etching solution into the low concentration area, while maintaining the stirring structure 5 to promote mixing. During this process, the control module will continuously receive real-time feedback from the sensor units, dynamically adjust the replenishment amount and stirring speed, forming a closed-loop control of "stirring-replenishing-re-stirring" until the concentration uniformity at each radial position in the etching tank 1 returns to the preset range.

[0045] Regarding temperature control, when the temperature difference detected by temperature sensor 32 in different axial height sensor units exceeds a preset threshold, it means that there is a significant temperature difference in the etching solution at different axial heights within the etching tank 1, which may affect the rate and quality of the etching reaction. The control module will increase the power of the heating unit 61 in the corresponding axial height area based on the specific situation. The heating unit 61 will rapidly heat up, heating the etching solution in the corresponding area to bring the temperature to a suitable range as quickly as possible. When the temperature difference detected by different axial height sensor units does not exceed the preset threshold, it indicates that the etching solution temperature distribution is relatively reasonable. At this time, the control module will maintain or reduce the power of the heating unit 61 in the corresponding axial height area to maintain temperature stability.

[0046] For liquid level control, when the liquid level sensor 33 detects that the liquid level in the etching tank 1 is lower than the preset lower limit, the control module will quickly instruct the liquid replenishment structure 4 to start. Alternatively, the etching liquid can be quickly replenished into the etching tank 1 through the pipe set on one side of the etching tank 1 until the liquid level rises back to the preset normal range.

[0047] This invention, by setting up an etching tank 1, a mounting structure 2, a sensor module 3, a liquid replenishment structure 4, and a control module, constructs a closed-loop control system based on real-time data by deploying the sensor module 3 across multiple workstations and linking it with the liquid replenishment structure 4, which can replenish liquid at specific points. This achieves precision and intelligence in the etching process. The system can perceive the parameter distribution in the multi-dimensional space within the tank in real time and make data-driven decisions to adjust the state of the etching solution in each area in a timely manner, ensuring that the glass substrate 7 at each mounting station can be etched under optimal conditions. Simultaneously, this solution adopts an on-demand liquid replenishment mode, effectively avoiding waste of etching solution and significantly reducing production costs. This mode enables the system to automatically adapt to various operating condition disturbances, ensuring long-term and stable process repeatability and providing a solid guarantee for large-scale industrial production.

[0048] In the description of this application, it should be noted that the terms "upper" and "lower," etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Unless otherwise expressly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two elements. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0049] It should be noted that in this application, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0050] The specific embodiments of the present invention described above do not constitute a limitation on the scope of protection of the present invention. Any other corresponding changes and modifications made in accordance with the technical concept of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A dynamic control based chemical etching system, comprising: The application relates to a dynamic control-based chemical etching system, which comprises the following steps: installing a workpiece to be etched and starting a chemical etching process; monitoring etching liquid parameters at different positions in an etching tank in real time by using a sensor module and transmitting monitoring data to a control module; calculating deviations of parameters at different spatial positions from set values according to the received monitoring data, and controlling an etching liquid supplementing structure to supplement etching liquid to corresponding installation position areas according to the deviation conditions. Each sensor module comprises one or more of a concentration sensor, a temperature sensor and a liquid level sensor, and the chemical etching system further comprises a stirring structure and a heating structure; the method further comprises the steps of controlling the rotating speed of the stirring structure and / or the power of each independent heating unit of the heating structure based on the calculation results of the control module. ​ 2. The dynamically controlled chemical etching system of claim 1, wherein, ​ 3. The dynamically controlled chemical etching system of claim 2, wherein, ​ 4. The dynamically controlled chemical etching system of claim 3, wherein, ​ 5. The dynamically controlled chemical etching system of claim 1, wherein, ​ 6. The dynamically controlled chemical etching system of claim 5, wherein, ​ 7. The dynamically controlled chemical etching system of claim 6, wherein, ​ 8. The dynamically controlled chemical etching system of claim 1, wherein, ​ 9. An etching method, characterized by, ​ ​ ​ ​ 10. The etching method according to claim 9, wherein ​ ​ The control of the stirring structure includes: when the concentration uniformity detected by the different radial position sensor units exceeds the preset range, the rotating speed of the stirring structure is increased; when the concentration uniformity detected by the different radial position sensor units does not exceed the preset range, the rotating speed of the stirring structure is decreased. The control of the heating structure includes: when the temperature difference detected by the different axial height sensor units exceeds the preset threshold, the power of the heating unit corresponding to the axial height area is increased; when the temperature difference detected by the different axial height sensor units does not exceed the preset threshold, the power of the heating unit corresponding to the axial height area is maintained or decreased.

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