Power module and power device having the same

Abstract

The present invention provides a power module and a power device having the same, the power module comprising: a half-bridge assembly, a first conductive plate disposed on a substrate, a first chip having a first electrode portion and a second electrode portion, a second chip having a third electrode portion and a fourth electrode portion, the first chip disposed on the first conductive plate, the second chip disposed on the second conductive plate, and the third chip disposed on the second conductive plate; the first electrode part is connected with the first conductive plate; the direct-current positive terminal comprises a first vertical connecting part and a first transverse connecting part, and the first vertical connecting part is arranged on the first conductive plate and is conductively connected with the first conductive plate; the direct-current negative terminal comprises a second vertical connecting part and a second transverse connecting part connected with the second vertical connecting part, the second vertical connecting part is electrically connected with the third electrode part, and in the thickness direction of the substrate, at least part of structures of the second transverse connecting part and the first transverse connecting part are arranged in an overlapped mode. According to the technical scheme, the problem that the parasitic inductance of the power module is large in the prior art is effectively solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor power module technology, and more specifically, to a power module and a power device having the same. Background Technology

[0002] A half-bridge power module typically includes a first chip, a second chip, a positive terminal, a negative terminal, and an AC terminal. The first chip is connected to both the positive terminal and the AC terminal, and the second chip is connected to both the negative terminal and the AC terminal. By controlling the on / off state of the first and second chips, fast switching can be achieved.

[0003] In related technologies, the improper arrangement of the positive terminal, negative terminal, and AC terminal of the power module leads to a large parasitic inductance in the power circuit. Especially during high-frequency switching, the parasitic inductance can cause voltage overshoot and oscillation, increasing the voltage stress and losses of the device and affecting the switching performance and electromagnetic compatibility of the module. Summary of the Invention

[0004] The main objective of this invention is to provide a power module and a power device having the same, in order to solve the problem of large parasitic inductance in power modules in related technologies.

[0005] To achieve the above objectives, according to one aspect of the present invention, a power module is provided, comprising: a half-bridge assembly including a substrate, a first conductive plate, a first chip, and a second chip, wherein the first conductive plate is disposed on the substrate, the first chip has a first electrode portion and a second electrode portion, the second chip has a third electrode portion and a fourth electrode portion, the first chip is disposed on the first conductive plate, and the first electrode portion is electrically connected to the first conductive plate; a DC positive terminal disposed on the substrate, the DC positive terminal including a first vertical connecting portion and a first horizontal connecting portion connected to the first vertical connecting portion, the first vertical connecting portion being disposed on the first conductive plate and electrically connected to the first conductive plate; a DC negative terminal disposed on the substrate, the DC negative terminal including a second vertical connecting portion and a second horizontal connecting portion connected to the second vertical connecting portion, the second vertical connecting portion being electrically connected to the third electrode portion, and at least a portion of the second horizontal connecting portion and the first horizontal connecting portion being structurally stacked in the thickness direction of the substrate; and an AC terminal electrically connected to both the second electrode portion and the fourth electrode portion.

[0006] Furthermore, the half-bridge assembly also includes a second conductive plate disposed on the substrate, a second chip disposed on the second conductive plate, a second electrode portion electrically connected to the second conductive plate, a fourth electrode portion electrically connected to the second conductive plate, an AC terminal electrically connected to the second conductive plate, a projection of the first lateral connecting portion on the substrate as a first projection area, a projection of the second lateral connecting portion on the substrate as a second projection area, and the overlapping portion of the first projection area and the second projection area as an overlapping projection area. In the direction from the first conductive plate to the second conductive plate, the distance between the two sides of the overlapping projection area is a first distance a, and the distance between the two sidewalls of the substrate is a second distance b. The maximum value of the first distance a is greater than or equal to the second distance b.

[0007] Furthermore, the power module also includes an upper half-bridge, which includes two half-bridge assemblies spaced apart. A portion of the structure of the first lateral connection is located directly above one of the two half-bridge assemblies of the upper half-bridge, and another portion of the structure of the first lateral connection is located directly above the other half-bridge assembly of the two half-bridge assemblies of the upper half-bridge. A portion of the structure of the second lateral connection is located directly above one of the two half-bridge assemblies of the upper half-bridge, and another portion of the structure of the second lateral connection is located directly above the other half-bridge assembly of the two half-bridge assemblies of the upper half-bridge.

[0008] Furthermore, the first transverse connecting portion includes a first transverse connecting plate, and the second transverse connecting portion includes a second transverse connecting plate.

[0009] Furthermore, the first transverse connecting plate includes a first plate segment, one side of which is connected to a first vertical connecting part. In the direction from the side of the first plate segment connected to the first vertical connecting part to the side of the first plate segment away from the first vertical connecting part, the distance between the two sidewalls of the first plate segment is a third distance c, and the third distance c gradually increases.

[0010] Furthermore, the first transverse connecting plate also includes a second plate segment. The first plate segment is connected between the first vertical connecting part and the second plate segment. In the direction from the first plate segment to the second plate segment, the distance between the two side walls of the second plate segment is a fourth distance d. The fourth distance d gradually increases, and the maximum value of the third distance c is less than or equal to the minimum value of the fourth distance d.

[0011] Furthermore, the second transverse connecting plate includes a third plate segment, one side of which is connected to the second vertical connecting part. In the direction from the side of the third plate segment connected to the second vertical connecting part to the side of the third plate segment away from the second vertical connecting part, the distance between the two sidewalls of the third plate segment is a fifth distance e, and the fifth distance e gradually increases.

[0012] Furthermore, the half-bridge assembly also includes a second conductive plate and a third conductive plate. The second conductive plate is located between the first conductive plate and the third conductive plate. The second chip is disposed on the second conductive plate. The fourth electrode is electrically connected to the second conductive plate. The AC terminal is electrically connected to the second conductive plate. The second vertical connection part is disposed on the third conductive plate.

[0013] Furthermore, the second vertical connecting part is disposed at the first end of the first conductive plate, the first vertical connecting part is disposed at the first end of the third conductive plate, the AC terminal is connected to the first end of the second conductive plate, the first end of the first conductive plate is disposed adjacent to the first end of the second conductive plate, and the first end of the second conductive plate is disposed adjacent to the first end of the third conductive plate.

[0014] Furthermore, the end of the second transverse connecting portion is provided with a clearance portion, which is used to clear the AC terminal.

[0015] Furthermore, the second lateral connecting portion is disposed on the side of the first lateral connecting portion away from the substrate.

[0016] Furthermore, the power module also includes an upper half-bridge and a lower half-bridge arranged symmetrically. The upper half-bridge includes two half-bridge components arranged at intervals, and the lower half-bridge includes two half-bridge components arranged at intervals. One of the two half-bridge components of the upper half-bridge is the first half-bridge component, and one of the two half-bridge components of the lower half-bridge is the second half-bridge component. The first end of the first conductive plate of the first half-bridge component is arranged adjacent to the first end of the first conductive plate of the second half-bridge component.

[0017] Furthermore, the AC terminal includes a third vertical connecting portion and a third horizontal connecting portion connected to the third vertical connecting portion. The third vertical connecting portion is electrically connected to both the second electrode portion and the fourth electrode portion. The third horizontal connecting portion includes a fourth plate segment. In the direction from the side of the fourth plate segment connected to the third vertical connecting portion to the side of the fourth plate segment away from the third vertical connecting portion, the distance between the two sidewalls of the fourth plate segment is a sixth distance f, and the sixth distance f gradually increases.

[0018] Furthermore, the power module also includes a first support isolation block, which is disposed between the first lateral connecting portion and the second lateral connecting portion.

[0019] Furthermore, the power module also includes a second support isolation block, and the DC negative terminal also includes an extended connection portion connected to the second lateral connection portion. The second support isolation block is disposed on the side of the second lateral connection portion away from the substrate, and part of the structure of the extended connection portion is mounted on the second support isolation block.

[0020] Furthermore, the power module also includes a housing and a third support isolation block. The housing includes a base plate and a surrounding plate. The base plate is disposed on the base plate, and the surrounding plate is disposed on the base plate and surrounds the outside of the base plate. The third support isolation block is disposed on the inner wall of the surrounding plate and is supported on the side of the first transverse connection portion near the base plate.

[0021] According to another aspect of the present invention, an electric device is provided, including a power module, wherein the power module is the power module described above.

[0022] According to the technical solution of this invention, the power module includes a half-bridge assembly, a DC positive terminal, a DC negative terminal, and an AC terminal. A first vertical connection portion supports a first horizontal connection portion, allowing current to flow sequentially through the first horizontal connection portion and the first vertical connection portion, ultimately flowing into the substrate. A second vertical connection portion supports a second horizontal connection portion, allowing current to flow from the third electrode portion of the second chip into the second vertical connection portion, then through the second vertical connection portion into the second horizontal connection portion, and finally out through the second horizontal connection portion. When the first chip is running and the second chip is not running, current flows in from the first horizontal connection portion of the DC positive terminal, then through the first vertical connection portion into the first conductive plate, and subsequently through the first conductive plate and the first electrode portion of the first chip into the first chip, then through the second electrode portion of the first chip into the AC terminal, and finally out through the AC terminal. When the first chip is not running and the second chip is running, current flows in from the AC terminal, then through the fourth electrode portion of the second chip into the second chip, then through the third electrode portion of the second chip into the second vertical connection portion, and finally out through the second horizontal connection portion. When current flows through the first transverse connecting portion, the current flows in a first direction; when current flows through the second transverse connecting portion, the current flows in a second direction. At least a portion of the second transverse connecting portion is stacked with the first transverse connecting portion. Since the first and second flow directions are opposite, the parasitic inductance generated when current flows through the first transverse connecting portion and the parasitic inductance generated when current flows through the second transverse connecting portion can cancel each other out, thereby reducing the parasitic inductance of the power module's current loop. Therefore, the technical solution of this application effectively solves the problem of large parasitic inductance in power modules in related technologies. Attached Figure Description

[0023] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0024] Figure 1 A three-dimensional structural schematic diagram of an embodiment of the power module according to the present invention is shown;

[0025] Figure 2 It shows Figure 1 A cross-sectional view of the first position of the power module;

[0026] Figure 3 It shows Figure 1 A three-dimensional structural diagram showing the connection between the half-bridge assembly of the power module and the DC positive terminal, DC negative terminal, and AC terminals;

[0027] Figure 4 It shows Figure 1 A three-dimensional structural diagram of the half-bridge component of the power module;

[0028] Figure 5 It shows Figure 1 A three-dimensional structural diagram of the DC positive terminal, DC negative terminal, and AC terminals of the power module;

[0029] Figure 6 It shows Figure 1 A bottom view of the DC positive and DC negative terminals of the power module;

[0030] Figure 7 It shows Figure 1 A top view of the AC terminals of the power module and the lower half-bridge assembly;

[0031] Figure 8 It shows Figure 1 A top view of the DC positive terminal, DC negative terminal, and lower half-bridge assembly of the power module;

[0032] Figure 9 It shows Figure 1 A cross-sectional view of the second position of the power module;

[0033] Figure 10 It shows Figure 1 A three-dimensional structural diagram of the power module when both the upper and lower half-bridges are connected to the base plate.

[0034] Figure 11 It shows Figure 1 A three-dimensional structural diagram of the DC positive terminal of the power module;

[0035] Figure 12 It shows Figure 11 A top view of the DC positive terminal;

[0036] Figure 13 It shows Figure 1 A three-dimensional structural diagram of the DC negative terminal of the power module;

[0037] Figure 14 It shows Figure 13 A bottom-view diagram of the DC negative terminal;

[0038] Figure 15 It shows Figure 1 A three-dimensional structural diagram of the AC terminals of the power module;

[0039] Figure 16 It shows Figure 15 A top view of the AC terminals;

[0040] Figure 17 It shows Figure 1 An exploded structural diagram of the power module's housing;

[0041] Figure 18 It shows Figure 1 A schematic diagram showing the current flow of the DC negative terminal, DC positive terminal, and AC terminals of the power module.

[0042] The above figures include the following reference numerals:

[0043] 10. Half-bridge assembly; 11. Substrate; 12. First conductive plate; 13. First chip; 14. Second chip; 15. Second conductive plate; 16. Third conductive plate; 20. DC positive terminal; 21. First vertical connection part; 22. First horizontal connection part; 221. First horizontal connection plate; 2211. First plate segment; 2212. Second plate segment; 30. DC negative terminal; 31. Second vertical connection part; 32. Second horizontal connection part; 321. Second horizontal connection plate; 3211. Third plate segment; 322. Clearance part; 33. Extended connection part; 40. AC terminal; 41. Third vertical connection part; 42. Third horizontal connection part; 4 21. Fourth segment; 50. Upper half-bridge; 60. Lower half-bridge; 70. First support isolation block; 71. Support plate; 72. First block; 73. Second block; 80. Second support isolation block; 81. Third block; 82. Fixing plate; 90. Outer shell; 91. Base plate; 92. Enclosure plate; 93. Top cover; 931. Groove; 100. Third support isolation block; 101. Support groove; 102. Receiving groove; 103. Bolt mounting hole; 104. Limiting groove; 110. First signal terminal; 120. Second signal terminal; 130. Third signal terminal; 140. Fourth signal terminal; 150. Fifth signal terminal; 160. Sixth signal terminal. Detailed Implementation

[0044] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0045] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0046] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following figures denote similar items; therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0047] like Figure 1 , Figure 3 , Figure 4 as well as Figure 18As shown, the power module of this embodiment includes: a half-bridge assembly 10, a DC positive terminal 20, a DC negative terminal 30, and an AC terminal 40. The half-bridge assembly 10 includes a substrate 11, a first conductive plate 12, a first chip 13, and a second chip 14. The first conductive plate 12 is disposed on the substrate 11. The first chip 13 has a first electrode portion and a second electrode portion. The second chip 14 has a third electrode portion and a fourth electrode portion. The first chip 13 is disposed on the first conductive plate 12, and the first electrode portion is conductively connected to the first conductive plate 12. The DC positive terminal 20 is disposed on the substrate 11. The DC positive terminal 20 includes a first vertical connecting portion 21 and a first horizontal connecting portion 22 connected to the first vertical connecting portion 21. The first vertical connecting portion 21 is disposed on the first conductive plate 12 and is conductively connected to the first conductive plate 12. A DC negative terminal 30 is disposed on the substrate 11. The DC negative terminal 30 includes a second vertical connection portion 31 and a second horizontal connection portion 32 connected to the second vertical connection portion 31. The second vertical connection portion 31 is electrically connected to a third electrode portion. In the thickness direction of the substrate 11, at least a portion of the second horizontal connection portion 32 is stacked with the first horizontal connection portion 22. An AC terminal 40 is electrically connected to both the second electrode portion and the fourth electrode portion.

[0048] Using the technical solution of this embodiment, the power module includes a half-bridge assembly 10, a DC positive terminal 20, a DC negative terminal 30, and an AC terminal 40. The first vertical connection portion 21 supports the first horizontal connection portion 22, allowing current to flow sequentially through the first horizontal connection portion 22 and the first vertical connection portion 21, ultimately flowing into the substrate 11. The second vertical connection portion 31 supports the second horizontal connection portion 32, allowing current to flow from the third electrode portion of the second chip 14 into the second vertical connection portion 31, then through the second vertical connection portion 31 into the second horizontal connection portion 32, and finally out through the second horizontal connection portion 32. When the first chip 13 is running and the second chip 14 is not running, current flows in from the first horizontal connection portion 22 of the DC positive terminal 20, then through the first vertical connection portion 21 into the first conductive plate 12. The current then flows sequentially through the first conductive plate 12 and the first electrode portion of the first chip 13 into the first chip 13, and then through the second electrode portion of the first chip 13 into the AC terminal 40, and finally out through the AC terminal 40. When the first chip 13 stops operating and the second chip 14 operates, current can flow in through the AC terminal 40, then through the fourth electrode of the second chip 14, and through the third electrode to the second vertical connection portion 31, and then out through the second horizontal connection portion 32. When the current flows through the first horizontal connection portion 22, the current flow direction is the first direction; when the current flows through the second horizontal connection portion 32, the current flow direction is the second direction. At least a portion of the second horizontal connection portion 32 and the first horizontal connection portion 22 are stacked. Since the first direction and the second direction are opposite, the parasitic inductance generated when the current flows through the first horizontal connection portion 22 and the parasitic inductance generated when the current flows through the second horizontal connection portion 32 can cancel each other out, thereby reducing the parasitic inductance of the current loop of the power module. Therefore, the technical solution of this embodiment effectively solves the problem of large parasitic inductance of the power module in the related art.

[0049] It should be noted that the substrate 11 is an insulating material, which can be ceramic. The first chip 13 is connected to the first conductive plate 12 by welding or high-temperature sintering. The first electrode portion is the drain, the second electrode portion is the source, the third electrode portion is the drain, and the fourth electrode portion is the source.

[0050] like Figure 18As shown, the black arrow on the DC positive terminal 20 indicates the first flow direction, and the black arrow on the DC negative terminal 30 indicates the second flow direction. Specifically, when one of the first chip 13 and the second chip 14 is running, the induced electromotive force generated by the current flowing through the DC positive terminal 20 or the DC negative terminal 30 does not disappear immediately, but gradually decays in the circuit of the power module. Therefore, the first flow direction and the second flow direction are opposite, which can cancel out the parasitic inductance, thereby reducing the parasitic inductance of the power module.

[0051] There are multiple first chips 13 and second chips 14, which improves the overcurrent capability of the power module. First chips 13 and second chips 14 are silicon carbide MOSFET (metal-oxide-semiconductor field-effect transistor) chips, but other chips can also be used.

[0052] The power module in this embodiment is a half-bridge module.

[0053] like Figure 3 , Figure 4 , Figure 6 as well as Figure 8 As shown, in this embodiment, the half-bridge assembly 10 further includes a second conductive plate 15 disposed on a substrate 11, a second chip 14 disposed on the second conductive plate 15, a second electrode portion electrically connected to the second conductive plate 15, a fourth electrode portion electrically connected to the second conductive plate 15, and an AC terminal 40 electrically connected to the second conductive plate 15. The projection of the first lateral connecting portion 22 on the substrate 11 is a first projection area, the projection of the second lateral connecting portion 32 on the substrate 11 is a second projection area, and the overlapping portion of the first projection area and the second projection area is an overlapping projection area. In the direction from the first conductive plate 12 to the second conductive plate 15, the distance between the two sides of the overlapping projection area is a first distance a, and the distance between the two sidewalls of the substrate 11 is a second distance b. The maximum value of the first distance a is greater than or equal to the second distance b. When the first chip 13 is running and the second chip 14 is not running, current can flow into the second conductive plate 15 through the second electrode portion and flow out through the AC terminal 40. When the first chip 13 stops operating and the second chip 14 operates, current can flow into the second conductive plate 15 through the AC terminal 40 and into the second chip 14 through the fourth electrode. By limiting the relationship between the maximum distance between the two sides of the overlapping projection area and the distance between the two sidewalls of the substrate 11, the overlapping area of ​​the first lateral connection portion 22 and the second lateral connection portion 32 is larger. This is beneficial for canceling the parasitic inductance generated when current flows through the first lateral connection portion 22 and the parasitic inductance generated when current flows through the second lateral connection portion 32, and can further reduce the parasitic inductance of the power module.

[0054] It should be noted that the first distance a gradually increases in the direction from the first vertical connecting part 21 to the first horizontal connecting part 22.

[0055] like Figure 3 , Figure 9 as well as Figure 10 As shown, in this embodiment, the power module further includes an upper half-bridge 50, which includes two half-bridge components 10 spaced apart. A portion of the first lateral connection 22 is located directly above one of the two half-bridge components 10 of the upper half-bridge 50, and another portion of the first lateral connection 22 is located directly above the other half-bridge component 10 of the upper half-bridge 50. A portion of the second lateral connection 32 is located directly above one of the two half-bridge components 10 of the upper half-bridge 50, and another portion of the second lateral connection 32 is located directly above the other half-bridge component 10 of the upper half-bridge 50. The two half-bridge components 10 of the upper half-bridge 50 are connected in parallel, which allows the power module to carry a larger current. A portion of the first lateral connection 22 is located above one of the half-bridge components 10, and another portion is located above the other half-bridge component 10. This allows the first lateral connection 22 to have a larger area, resulting in a larger cross-sectional area for current flow and efficient heat dissipation when current flows through it. Similarly, a portion of the second lateral connection 32 is located above one of the half-bridge components 10, and another portion is located above the other half-bridge component 10. This allows the second lateral connection 32 to have a larger area, resulting in a larger cross-sectional area for current flow and efficient heat dissipation when current flows through it. This arrangement also increases the overlapping area of ​​the first and second lateral connection 22, which helps to cancel out the parasitic inductance generated when current flows through the first and second lateral connection 32, thus reducing the parasitic inductance of the power module.

[0056] It should be noted that, as Figure 6 As shown, the section line region is the overlapping projection region. (As...) Figure 7As shown, the area bounded by the dashed line represents the region enclosed by the two substrates 11 in the lower half-bridge 60. The area enclosed by the two substrates 11 in the upper half-bridge 50 is equal to the area enclosed by the two substrates 11 in the lower half-bridge 60. The ratio of the area s1 of the overlapping projection region to the area s2 of the region enclosed by the two substrates 11 in the upper half-bridge 50 satisfies: 0.2 ≤ s1 / s2 ≤ 1. By limiting the value of s1 / s2, the overlapping projection region can have a larger area, resulting in a larger overlapping area between the first lateral connection portion 22 and the second lateral connection portion 32. This facilitates the cancellation of parasitic inductance generated when current flows through the first lateral connection portion 22 and the second lateral connection portion 32, further reducing the parasitic inductance of the power module. Specifically, s1 / s2 can be 0.2, 0.3, 0.31, 0.317, 0.32, 0.35, 0.4, 0.5, 0.7, 0.8, or 1. In this embodiment, s1 / s2 is 0.317.

[0057] like Figure 3 , Figure 11 as well as Figure 13 As shown, in this embodiment, the first transverse connecting portion 22 includes a first transverse connecting plate 221, and the second transverse connecting portion 32 includes a second transverse connecting plate 321. The first transverse connecting plate 221 is provided so that the cross-sectional area for current flow is larger, which facilitates the timely dissipation of heat generated in the first transverse connecting portion 22 when current flows through it, preventing heat accumulation. Similarly, the second transverse connecting plate 321 is provided so that the cross-sectional area for current flow is larger, which facilitates the timely dissipation of heat generated in the second transverse connecting portion 32 when current flows through it, preventing heat accumulation.

[0058] like Figure 3 , Figure 11 as well as Figure 12 As shown, in this embodiment, the first transverse connecting plate 221 includes a first plate segment 2211. One side of the first plate segment 2211 is connected to the first vertical connecting portion 21. In the direction from the side where the first plate segment 2211 is connected to the first vertical connecting portion 21 to the side of the first plate segment 2211 away from the first vertical connecting portion 21, the distance between the two sidewalls of the first plate segment 2211 is a third distance c, which gradually increases. This gradual increase in the third distance c results in a gradually increasing cross-sectional area of ​​the first plate segment 2211 in the direction from the side where the first plate segment 2211 is connected to the first vertical connecting portion 21 to the side of the first plate segment 2211 away from the first vertical connecting portion 21. This increases the cross-sectional area for current flow and allows the heat generated when current flows through the first plate segment 2211 to dissipate in a timely manner.

[0059] like Figure 3 , Figure 11 as well as Figure 12 As shown, in this embodiment, the first transverse connecting plate 221 further includes a second plate segment 2212. The first plate segment 2211 is connected between the first vertical connecting portion 21 and the second plate segment 2212. In the direction from the first plate segment 2211 to the second plate segment 2212, the distance between the two side walls of the second plate segment 2212 is a fourth distance d. The fourth distance d gradually increases, and the maximum value of the third distance c is less than or equal to the minimum value of the fourth distance d. The gradually increasing distance between the two side walls of the second plate segment 2212 results in a gradually increasing cross-sectional area of ​​the second plate segment 2212 in the direction from the first plate segment 2211 to the second plate segment 2212. This increases the cross-sectional area for current flow and allows the heat generated when the current flows through the second plate segment 2212 to dissipate in a timely manner.

[0060] It should be noted that, in this embodiment, at the junction of the first plate segment 2211 and the second plate segment 2212, the distance between the two sidewalls of the first plate segment 2211 is the largest, and the distance between the two sidewalls of the second plate segment 2212 is the smallest. In this embodiment, the maximum value of the third distance c is equal to the minimum value of the fourth distance d, making the structure at the junction of the first plate segment 2211 and the second plate segment 2212 more reasonable and avoiding the generation of a high electric field region at the junction of the first plate segment 2211 and the second plate segment 2212, which would affect the electrical performance and reliability of the power module. In other embodiments, the maximum value of the third distance c is less than the minimum value of the fourth distance d.

[0061] like Figure 3 , Figure 13 as well as Figure 14 As shown, in this embodiment, the second transverse connecting plate 321 includes a third plate segment 3211. One side of the third plate segment 3211 is connected to the second vertical connecting portion 31. In the direction from the side where the third plate segment 3211 is connected to the second vertical connecting portion 31 to the side of the third plate segment 3211 away from the second vertical connecting portion 31, the distance between the two sidewalls of the third plate segment 3211 is a fifth distance e, which gradually increases. The connection between the third plate segment 3211 and the second vertical connecting portion 31 allows current to flow between the third plate segment 3211 and the second vertical connecting portion 31. The gradually increasing distance between the two sidewalls of the third plate segment 3211 allows the cross-sectional area of ​​current flow to gradually increase in the direction from the side where the third plate segment 3211 is connected to the second vertical connecting portion 31 to the side of the third plate segment 3211 away from the second vertical connecting portion 31, thus allowing the heat generated when the current flows through the second transverse connecting plate 321 to dissipate in a timely manner.

[0062] It should be noted that by defining the relationship between the first distance a and the second distance b, the gradual increase of the third distance c, the relationship between the maximum value of the third distance c and the fourth distance d, and the gradual increase of the fifth distance e, the area of ​​the overlapping projection region can be further increased. That is, in the thickness direction of the substrate 11, there are more stacked structures of the second lateral connecting portion 32 and the first lateral connecting portion 22, which is beneficial for the dissipation of heat generated when the current flows through the first lateral connecting portion 22 and the heat generated when the current flows through the second lateral connecting portion 32. It can also make more of the parasitic inductance generated when the current flows through the first lateral connecting portion 22 and the parasitic inductance generated when the current flows through the second lateral connecting portion 32 cancel each other out, which is beneficial for further reducing the parasitic inductance of the power module.

[0063] It should be noted that the first horizontal connecting plate 221 also includes a fourth plate segment, which is located on the side of the first plate segment 2211 away from the second plate segment 2212, and the first vertical connecting part is connected to the fourth plate segment.

[0064] The second horizontal connecting plate 321 also includes a fifth plate segment, which is disposed between the third plate segment 3211 and the second vertical connecting part 31.

[0065] like Figure 3 , Figure 4 , Figure 9 as well as Figure 10 As shown, in this embodiment, the half-bridge assembly 10 further includes a second conductive plate 15 and a third conductive plate 16. The second conductive plate 15 is located between the first conductive plate 12 and the third conductive plate 16. The second chip 14 is disposed on the second conductive plate 15. The fourth electrode is electrically connected to the second conductive plate 15. The AC terminal 40 is electrically connected to the second conductive plate 15. The second vertical connection portion 31 is disposed on the third conductive plate 16. By setting the second conductive plate 15 and the third conductive plate 16, normal current flow can be ensured. The second conductive plate 15 is located between the first conductive plate 12 and the third conductive plate 16, which facilitates the arrangement of the DC positive terminal 20, the DC negative terminal 30, and the AC terminal 40.

[0066] It should be noted that the first conductive plate 12, the second conductive plate 15, and the third conductive plate 16 are arranged alternately. The second conductive plate 15 is located between the first conductive plate 12 and the third conductive plate 16. By setting the maximum value of the third distance c to be less than or equal to the fourth distance d, it is convenient to arrange the DC positive terminal 20 and the DC negative terminal 30. Specifically, it facilitates the corresponding arrangement of the first vertical connecting part 21 with the first conductive plate 12, the corresponding arrangement of the second vertical connecting part 31 with the second conductive plate 15, the connection of the first vertical connecting part 21 with the first horizontal connecting part 22, and the connection of the second vertical connecting part 31 with the second horizontal connecting part 32.

[0067] like Figure 3 , Figure 5 as well as Figure 9 As shown, in this embodiment, the second vertical connecting portion 31 is disposed at the first end of the first conductive plate 12, the first vertical connecting portion 21 is disposed at the first end of the third conductive plate 16, and the AC terminal 40 is connected to the first end of the second conductive plate 15. The first ends of the first conductive plate 12 and the second conductive plate 15 are disposed adjacent to each other, and the first ends of the second conductive plate 15 and the third conductive plate 16 are disposed adjacent to each other. This arrangement facilitates the arrangement of the relative positions of the first vertical connecting portion 21, the second vertical connecting portion 31, and the AC terminal 40.

[0068] It should be noted that the second chip 14 and the second conductive plate 15 are connected by welding or high-temperature sintering. The second electrode part and the second conductive plate 15 can be connected by bonding wires or by copper clips.

[0069] It should be noted that the half-bridge assembly 10 also includes a fourth conductive plate and a fifth conductive plate. The first conductive plate 12 is disposed between the fourth conductive plate and the second conductive plate 15, and the fifth conductive plate is disposed between the second conductive plate 15 and the third conductive plate 16. The fourth conductive plate is connected to the gate of the first chip 13 via a bonding wire. The fifth conductive plate is connected to the gate of the second chip 14 via a bonding wire.

[0070] like Figure 3 , Figure 15 as well as Figure 16 As shown, in this embodiment, the AC terminal 40 includes a third vertical connecting portion 41 and a third horizontal connecting portion 42 connected to the third vertical connecting portion 41. The third vertical connecting portion 41 is electrically connected to both the second electrode portion and the fourth electrode portion. The third horizontal connecting portion 42 includes a fourth plate segment 421. In the direction from the side where the fourth plate segment 421 is connected to the third vertical connecting portion 41 to the side of the fourth plate segment 421 away from the third vertical connecting portion 41, the distance between the two sidewalls of the fourth plate segment 421 is a sixth distance f, which gradually increases. With the above arrangement, current can flow between the second electrode portion, the third vertical connecting portion 41, and the third horizontal connecting portion 42, and also between the third horizontal connecting portion 42, the third vertical connecting portion 41, and the second electrode portion. The sixth distance f gradually increases, which makes the cross-sectional area of ​​current flow gradually increase in the direction from the side where the fourth plate segment 421 is connected to the third vertical connection part 41 to the side of the fourth plate segment 421 away from the third vertical connection part 41. It also makes the heat generated when the current flows through the fourth plate segment 421 dissipate in time.

[0071] It should be noted that the first vertical connecting part 21 includes a first vertical connecting plate, the second vertical connecting part 31 includes a second vertical connecting plate, and the third vertical connecting part 41 includes a third vertical connecting plate.

[0072] The third transverse connecting part 42 includes a third transverse connecting plate, which includes a fourth plate segment 421 and a sixth plate segment. The fourth plate segment 421 is connected between the sixth plate segment and the third vertical connecting part 41.

[0073] The third transverse connecting plate also includes a seventh plate segment, which is connected between the third vertical connecting part 41 and the fourth plate segment 421.

[0074] like Figure 3 , Figure 5 , Figure 9 as well as Figure 10 As shown, in this embodiment, the power module further includes a symmetrically arranged upper half-bridge 50 and a lower half-bridge 60. The upper half-bridge 50 includes two half-bridge components 10 spaced apart, and the lower half-bridge 60 includes two half-bridge components 10 spaced apart. One of the two half-bridge components 10 in the upper half-bridge 50 is the first half-bridge component, and one of the two half-bridge components 10 in the lower half-bridge 60 is the second half-bridge component. The first end of the first conductive plate 12 of the first half-bridge component is adjacent to the first end of the first conductive plate 12 of the second half-bridge component. This arrangement facilitates the placement of the DC positive terminal 20, the DC negative terminal 30, and the AC terminal 40.

[0075] It should be noted that, as Figure 10 As shown, the dashed line is the dividing line between the upper half-bridge 50 and the lower half-bridge 60. The two half-bridge components 10 in the upper half-bridge 50 are symmetrically arranged about a first symmetry plane, the two half-bridge components in the lower half-bridge 60 are symmetrically arranged about the first symmetry plane, and the upper half-bridge 50 and lower half-bridge 60 are arranged about a second symmetry plane. The first end of the first conductive plate 12, the first end of the second conductive plate 15, and the first end of the third conductive plate 16 in a half-bridge component 10 are arranged adjacent to each other, facilitating the symmetrical arrangement of adjacent half-bridge components 10 in the upper half-bridge 50 and lower half-bridge 60, and facilitating the connection of adjacent half-bridge components 10 in the upper half-bridge 50 and lower half-bridge 60 to the DC positive terminal 20, the DC negative terminal 30, and the AC terminal 40, respectively.

[0076] Specifically, the first half-bridge assembly and the second half-bridge assembly are symmetrically arranged about a second symmetrical plane. The first end of the second conductive plate 15 of the first half-bridge assembly is adjacent to the first end of the second conductive plate 15 of the second half-bridge assembly. The first end of the third conductive plate 16 of the first half-bridge assembly is adjacent to the first end of the third conductive plate 16 of the second half-bridge assembly.

[0077] It should be noted that there are multiple first vertical connecting parts 21, and each of the multiple first vertical connecting parts 21 is arranged in a one-to-one correspondence with a multiple first conductive plate 12. There are multiple second vertical connecting parts 31, and each of the multiple second vertical connecting parts 31 is arranged in a one-to-one correspondence with a multiple second conductive plate 15. There are multiple third vertical connecting parts 41, and each of the multiple third vertical connecting parts 41 is arranged in a one-to-one correspondence with a multiple third conductive plate 16.

[0078] It should be noted that when the first chip 13 is running and the second chip 14 is not running, the current direction on the third lateral connection part 42 is opposite to the current direction on the second conductive plate 15 of the half-bridge component 10 in the lower half-bridge 60, which can reduce parasitic inductance.

[0079] The projection of AC terminal 40 onto the second conductive plate 15 of one half-bridge assembly 10 of the lower half-bridge 60 is the third projection area. For example... Figure 7 As shown, both cross-sectional areas are third projection areas. The ratio of the area s3 of the third projection area to the area s4 of the second conductive plate 15 satisfies: 0.5 ≤ s3 / s4 ≤ 1. By limiting the value of s3 / s4, the third projection area can have a larger area. Consequently, when the first chip 13 is running and the second chip 14 is not running, the current direction on the third lateral connection portion 42 is opposite to the current direction on the second conductive plate 15 of the half-bridge component 10 in the lower half-bridge 60, which can reduce parasitic inductance. Specifically, s3 / s4 can be 0.5, 0.6, 0.7, 0.8, 0.9, or 1. In this embodiment, s3 / s4 is 0.6.

[0080] like Figure 9 , Figure 13 as well as Figure 14 As shown, in this embodiment, a clearance portion 322 is provided at the end of the second lateral connecting portion 32 to allow the AC terminal 40 to pass. Part of the structure of the AC terminal 40 is located within the clearance portion 322, which makes the DC negative terminal 30 and the AC terminal 40 occupy less space, thus helping to reduce the size of the power module.

[0081] It should be noted that the clearance part 322 is located on the side of the fifth plate segment away from the third plate segment 3211. The clearance part 322 includes a clearance groove.

[0082] like Figures 3 to 4 As shown, in this embodiment, the second lateral connecting portion 32 is disposed on the side of the first lateral connecting portion 22 away from the substrate 11. This arrangement facilitates the arrangement of the DC positive terminal 20, the DC negative terminal 30, and the AC terminal 40.

[0083] It should be noted that the second transverse connecting portion 32 is disposed on the side of the first transverse connecting portion 22 away from the substrate 11, that is, the first transverse connecting portion 22 is located between the second transverse connecting portion 32 and the substrate 11. By arranging the first end of the first conductive plate 12 adjacent to the first end of the second conductive plate 15, and the second conductive plate 15 adjacent to the first end of the first conductive plate 12, it is convenient to arrange the relative positions of the first vertical connecting portion 21, the second vertical connecting portion 31, and the third vertical connecting portion 41. In the direction from the first conductive plate 12 to the third conductive plate 16, the first vertical connecting portion 21, the second vertical connecting portion 31, and the third vertical connecting portion 41 are arranged sequentially. The first transverse connecting portion 22 is disposed between the second transverse connecting portion 32 and the substrate 11. Compared to the second transverse connecting portion 32, the first transverse connecting portion 22 is disposed between the second transverse connecting portion 32 and the substrate 11. 2. The first horizontal connecting part 22 and the substrate 11 are disposed between the first vertical connecting part 21 and the first horizontal connecting part 22, and the second vertical connecting part 31 and the second horizontal connecting part 32. In order to connect the first vertical connecting part 21 with the first horizontal connecting part 22 and the second vertical connecting part 31 with the second horizontal connecting part 32, multiple avoidance structures need to be set on the DC positive terminal 20 and the DC negative terminal 30, resulting in a relatively complex structure of the DC positive terminal 20 and the DC negative terminal 30. In this embodiment, the DC positive terminal 20 and the DC negative terminal 30 can not only achieve electrical connection, but also make the structure of the DC positive terminal 20 and the DC negative terminal 30 simpler, which is convenient for design and manufacturing.

[0084] like Figure 2 and Figure 17 As shown, in this embodiment, the power module further includes a first support isolation block 70, which is disposed between the first transverse connecting portion 22 and the second transverse connecting portion 32. The first support isolation block 70 can support the first transverse connecting portion 22 and the second transverse connecting portion 32, and also can insulate the first transverse connecting portion 22 and the second transverse connecting portion 32.

[0085] like Figure 2 and Figure 17 As shown, in this embodiment, the power module further includes a second support isolation block 80, and the DC negative terminal 30 also includes an extended connection portion 33 connected to the second lateral connection portion 32. The second support isolation block 80 is disposed on the side of the second lateral connection portion 32 away from the substrate 11, and part of the structure of the extended connection portion 33 is mounted on the second support isolation block 80. The second support isolation block 80 can support the extended connection portion 33, facilitating the connection of the extended connection portion 33 to an external conductive structure.

[0086] The external conductive structure is a busbar.

[0087] It should be noted that the DC positive terminal 20 also includes a fourth vertical connection portion, which is located on the side of the first horizontal connection portion 22 away from the first vertical connection portion 21. The fourth vertical connection portion includes a fourth vertical connection plate and a fourth horizontal connection plate connected to the fourth vertical connection plate and vertically arranged therefrom. The fourth horizontal connection plate is connected to an external conductive structure. Multiple fourth horizontal connection plates are spaced apart, and these multiple fourth horizontal connection plates are spaced apart in the direction from the first conductive plate 12 to the second conductive plate 15.

[0088] The DC negative terminal 30 also includes a fifth vertical connection portion, which is located on the side of the second horizontal connection portion 32 away from the second vertical connection portion 31. The fifth vertical connection portion includes a fifth vertical connection plate and a fifth horizontal connection plate connected to the fifth vertical connection plate and vertically arranged. The fifth horizontal connection plate is connected to an external conductive structure. Multiple fifth horizontal connection plates are spaced apart, and these plates are spaced apart in the direction from the first conductive plate 12 to the second conductive plate 15.

[0089] Specifically, the current directions of the fourth vertical connecting plate and the fifth vertical connecting plate are opposite, which allows the parasitic inductance generated when the current flows through the fourth vertical connecting plate and the parasitic inductance generated when the current flows through the fifth vertical connecting plate to cancel each other out, thereby reducing the parasitic inductance of the power module.

[0090] It should be noted that the extended connecting part 33 includes a sixth vertical connecting plate and a sixth horizontal connecting plate connected to the sixth vertical connecting plate and vertically arranged. The sixth horizontal connecting plate is connected to the external conductive structure. Multiple sixth horizontal connecting plates are spaced apart. The bottom of the second support isolation block 80 is located on the second horizontal connecting part 32, and the sixth horizontal connecting plate is located on the top of the second support isolation block 80.

[0091] Specifically, the fourth vertical connecting part, the fifth vertical connecting part, and the extended connecting part are arranged at intervals in a direction perpendicular to the first conductive plate 12 to the second conductive plate 15.

[0092] The fourth horizontal connecting plate is located at the end of the fourth vertical connecting plate furthest from the fifth vertical connecting part. The fifth horizontal connecting plate is located at the end of the fifth vertical connecting plate furthest from the fourth vertical connecting part. The sixth horizontal connecting plate is located at the end of the sixth vertical connecting plate furthest from the fourth vertical connecting part.

[0093] like Figure 2 and Figure 17As shown, in this embodiment, the power module further includes a housing 90 and a third support isolation block 100. The housing 90 includes a base plate 91 and a surrounding plate 92. The substrate 11 is disposed on the base plate 91, and the surrounding plate 92 is disposed on the base plate 91 and surrounds the outer side of the substrate 11. The third support isolation block 100 is disposed on the inner wall of the surrounding plate 92 and supports the first transverse connecting portion 22 on the side near the substrate 11. The third support isolation block 100 can support the first transverse connecting portion 22. The third support isolation block 100 can also provide insulation between the first transverse connecting portion 22 and the first conductive plate 12, between the first transverse connecting portion 22 and the second conductive plate 15, between the first transverse connecting portion 22 and the third conductive plate 16, between the first transverse connecting portion 22 and the first chip 13, and between the first transverse connecting portion 22 and the second chip 14.

[0094] It should be noted that the outer casing 90 also includes an upper cover 93, which is disposed on the surrounding plate 92, and the upper cover 93 is provided with a groove 931 for avoiding the second support isolation block.

[0095] The base plate 91 is made of metal. It provides mechanical support for the entire power module and transfers heat generated by the module to the heat sink. The base plate 91 can be made of copper or aluminum-based composite material, with its bottom surface coated with an anti-corrosion coating or sandblasted to improve durability. The bottom surface of the base plate 91 is tightly bonded to the air-cooled / water-cooled heat sink using thermal grease or a thermal interface material to ensure efficient heat dissipation. Heat generated during the operation of the first chip 13 and the second chip 14 can be conducted to the base plate 91 via the substrate 11.

[0096] The enclosure 92 is made of high-insulation plastic or composite material through one-time injection molding to ensure the overall electrical insulation of the power module. Epoxy resin or silicone gel is potted inside the housing 90, with the filling height maintained above the highest point of the bonding wires to prevent external dust from entering, while also increasing internal flame retardancy and weather resistance.

[0097] It should be noted that during the potting of the power module, the first support isolation block 70, the second support isolation block 80, and the third support isolation block 100 provide a physical voltage isolation layer for the DC positive terminal 20 and the DC negative terminal 30. The first support isolation block 70, the second support isolation block 80, and the third support isolation block 100 are detachably connected to the housing 90, which makes the assembly and disassembly of the first support isolation block 70, the second support isolation block 80, and the third support isolation block 100 more convenient, simplifies the assembly process, and improves production efficiency.

[0098] Specifically, the first support isolation block 70 is detachably connected to the base plate 91, the surrounding plate 92, or the third support isolation block 100, which can be a plug-in connection or a screw connection. The second support isolation block 80 is detachably connected to the base plate 91, the surrounding plate 92, or the third support isolation block 100, which can be a plug-in connection or a screw connection. The third support isolation block 100 is detachably connected to the base plate 91, the surrounding plate 92, or the third support isolation block 100, which can be a plug-in connection or a screw connection. In this embodiment, the first support isolation block 70 is detachably connected to the base plate 91 or the surrounding plate 92, which can be a plug-in connection or a screw connection. The second support isolation block 80 is detachably connected to the base plate 91, the surrounding plate 92, or the third support isolation block 100, which can be a plug-in connection or a screw connection. The third support isolation block 100 is detachably connected to the base plate 91 or the surrounding plate 92, which can be a plug-in connection or a screw connection. In this embodiment, the first support isolation block 70 and the third support isolation block 100 are detachably connected by a support plate 71 and a support groove 101, which extend along the length of the base plate 91. The second support isolation block 80 and the third support isolation block 100 are detachably connected by bolts. The third support isolation block 100 is detachably connected to the surrounding plate 92 by a second slot and a second plate, which can extend along the height of the surrounding plate or along its length. One of the second slot and the second plate is located on the inner wall of the surrounding plate, and the other is located at the end of the third support isolation block.

[0099] Existing power module enclosures require the integration of multiple signal and power terminals during mold opening, resulting in complex outer casing molds, high requirements for injection molding processes, low yield rates, and increased manufacturing costs and difficulties. In contrast, the first support isolation block 70, the second support isolation block 80, the third support isolation block 100, and the top cover of the power module in this embodiment are detachably configured, simplifying the mold opening process for the enclosure and top cover, reducing the requirements for injection molding processes, increasing yield rates, and lowering manufacturing costs and difficulties. Furthermore, the first support isolation block 70, the second support isolation block 80, and the third support isolation block 100 can share the thermal expansion stress of the power module and significantly improve the internal insulation performance of the power module. Electrical simulations show that the internal insulation voltage of the power module can reach 6 kV.

[0100] The length direction of the base plate 91 is perpendicular to the direction from the first conductive plate 12 to the second conductive plate 15, and parallel to the direction from the upper half bridge 50 to the lower half bridge 60.

[0101] The first support isolation block 70 includes a first block 72 and a second block 73, which are arranged vertically. The first block 72 is disposed between the first transverse connecting portion 22 and the second transverse connecting portion 32, and the second block 73 is disposed between the fourth vertical connecting plate and the fifth vertical connecting plate. The first block 72 includes a support plate 71 and a reinforcing plate, with the reinforcing plate disposed between the support plate 71 and the second block 73.

[0102] In other embodiments, the second block 73 is provided with a mounting groove extending through the height direction of the second block 73, the fourth vertical connecting plate of the fourth vertical connecting part is inserted into the mounting groove, and the first block 72 is disposed on the top surface of the first horizontal connecting part 22.

[0103] The second support isolation block 80 includes a third block 81 and a fixing plate 82 disposed at the end of the third block 81. The third block 81 is disposed on the second transverse connecting portion 32 and is used to support the extended connecting portion 33. The fixing plate 82 is bolted to the third support isolation block 100. The length direction of the third block 81 is parallel to the width direction of the outer casing 90, and the length direction of the third block 81 is parallel to the direction from the first conductive plate 12 to the second conductive plate 15.

[0104] The third support isolation block 100 has a receiving groove 102 in its middle. The first transverse connecting part 22 is disposed in the receiving groove 102. The bolts connecting the fixing plate 82 and the third support isolation block 100 are disposed outside the receiving groove 102 and located on the side of the receiving groove 102. The third support isolation block 100 has bolt mounting holes 103 for mounting the bolts connecting the fixing plate 82 and the third support isolation block 100. The support groove 101 is disposed on the third support isolation block 100 and is connected to the receiving groove 102. The third support isolation block 100 also has a limiting groove 104. The first support isolation block 70 also includes a limiting plate disposed between the first block 72 and the second block 73. The limiting plate and the limiting groove 104 are mutually limiting.

[0105] The power module also includes a first signal terminal 110, which is disposed on the first transverse connecting portion 22. An annular washer is provided at the end of the first signal terminal 110 away from the first transverse connecting portion to facilitate fastener connection. The first signal terminal is connected to the fourth board segment 421.

[0106] The power module also includes a second signal terminal 120, which is disposed on the second transverse connecting portion 32. The second signal terminal 120 comprises two spaced apart and symmetrically arranged terminals. An annular washer is provided at the end of the second signal terminal 120 away from the second transverse connecting portion 32 to facilitate fastener connection. The second signal terminal 120 is connected to the third board segment 3211.

[0107] The power module also includes a third signal terminal 130, which is disposed on the third transverse connecting portion 42. The third signal terminal 130 comprises two spaced-apart and symmetrically arranged terminals. The third signal terminal is connected to the sixth board segment.

[0108] The power module also includes a fourth signal terminal 140, which is connected to multiple fifth conductive plates. The fourth signal terminal includes a sixth vertical connecting portion and a fourth horizontal connecting portion. There are multiple sixth vertical connecting portions, each corresponding to one of the multiple fifth conductive plates. These sixth vertical connecting portions are located on the side of the fourth horizontal connecting portion. The fourth signal terminal also includes a seventh vertical connecting portion, which is a circuit input terminal and is located at one end of the fourth horizontal connecting portion.

[0109] The power module also includes a fifth signal terminal 150, which is connected to both fourth conductive plates in the lower half-bridge 60. The fifth signal terminal 150 includes an eighth vertical connection portion and a fifth horizontal connection portion. There are multiple eighth vertical connection portions, each corresponding to one of the fourth conductive plates in the lower half-bridge 60. These eighth vertical connection portions are located on the side of the fifth horizontal connection portion. One end of the fifth horizontal connection portion is a circuit input terminal. There are also two fifth signal terminals 150. One of the two fifth signal terminals 150 is connected to both fourth conductive plates in the upper half-bridge 50, and the other of the two fifth signal terminals 150 is connected to both fourth conductive plates in the lower half-bridge 60.

[0110] The power module also includes a sixth signal terminal 160, which is connected to a third conductive plate 16 in the lower half-bridge 60. The sixth signal terminal 160 includes a ninth vertical connecting portion, a sixth horizontal connecting portion, and a tenth vertical connecting portion arranged sequentially. The ninth vertical connecting portion is connected to the third conductive plate 16.

[0111] It should be noted that the first signal terminal 110, the second signal terminal 120, the third signal terminal 130, and the sixth signal terminal 160 are source signal terminals. The fourth signal terminal 140 and the fifth signal terminal 150 are gate signal terminals. The sixth vertical connecting portion, the fourth horizontal connecting portion, the eighth vertical connecting portion, the fifth horizontal connecting portion, and the ninth vertical connecting portion are all rod-shaped structures. The sixth horizontal connecting portion and the tenth vertical connecting portion are both plate-shaped structures.

[0112] This embodiment relates to the field of high-voltage high-power semiconductor module packaging, specifically to a symmetrical stacked terminal high-voltage high-current power module packaging structure suitable for voltage levels of 1200V-6500V and current levels of 500A-2000A. It can meet the requirements of high reliability, low parasitic parameters and high thermal uniformity for high-voltage and high-current application scenarios such as power grids, rail transit and new energy power generation.

[0113] This embodiment proposes a highly symmetrical power module packaging structure. Specifically, it employs a centrally symmetrical layout of four substrates 11, connecting the two parallel half-bridge components 10 of the upper half-bridge 50 and the two parallel half-bridge components 10 of the lower half-bridge 60 from the center of the base plate 91 to the AC terminal 40. This achieves symmetrical current paths, reduces parasitic inductance, and ensures that the four parallel current paths are perfectly consistent in geometric length and impedance, improving current sharing performance. It also ensures uniform heat generation within the power module, fully utilizing the heat dissipation performance of the power module and heat sink, thus enhancing the power module's thermal management capabilities and lifespan. Compared to the uneven current distribution caused by loop asymmetry in traditional packaging, the power module of this embodiment can control the current sharing error of parallel chips within ±5%, significantly improving the parallel expansion capability and operational reliability of the power module. Furthermore, the positions of the multiple substrates 11, the multiple first chips 13, and the multiple second chips 14 within the power module are all symmetrically arranged about the central axis of the power module, ensuring consistent loop lengths, optimizing electrothermal distribution, and enhancing the reliability of the power module.

[0114] In this embodiment, the DC positive terminal 20 and the DC negative terminal 30 form a double-layer structure, which cancels out the parasitic inductance generated by the DC positive terminal 20 and the DC negative terminal 30, reducing the overall inductance of the power module circuit. In high-speed switching applications, small parasitic inductances and resistances in the circuit can cause severe overshoot and oscillations, leading to increased switching losses and exacerbating electromagnetic interference. To address this issue, this embodiment designs the first signal terminal 110 and the DC positive terminal 20 as a single integrated terminal, the second signal terminal 120 and the DC negative terminal 30 as a single integrated terminal, with the two second signal terminals 120 symmetrically led out from both sides of the DC negative terminal 30, and the third signal terminal 130 and the AC terminal 40 as a single integrated terminal, with the two third signal terminals 130 symmetrically led out from both sides of the AC terminal 40. This significantly shortens and evens out the conduction path of the signal and power circuits. Compared with the prior art, this design significantly shortens the path of the signal and power circuits, reduces parasitic inductance by about 30%, and reduces parasitic resistance by about 20%, thereby effectively reducing switching overshoot, oscillation, and electromagnetic interference, significantly improving switching speed and energy efficiency, and also resulting in better electromagnetic compatibility performance.

[0115] This embodiment provides a high-voltage, high-current power semiconductor module packaging structure through structural symmetry and the stacking of positive and negative terminals. It features low parasitic inductance, excellent current sharing performance, and thermal management capabilities, making it suitable for high-voltage, high-current applications such as power grids, rail transit, and new energy power generation.

[0116] Thanks to the overall symmetrical layout and integrated terminal design of the power module in this embodiment, the power module can be seamlessly applied to various circuit topologies such as half-bridge, full-bridge, or multi-phase parallel connection without additional layout adjustments, greatly improving the versatility and market adaptability of the power module.

[0117] The power device of this embodiment includes a power module, which is the power module described above. The parasitic inductance generated when the current flows through the first lateral connecting portion 22 and the parasitic inductance generated when the current flows through the second lateral connecting portion 32 of the power module can cancel each other out, thereby reducing the parasitic inductance of the current loop of the power module. The power device having the power module described above also has the advantages mentioned above.

[0118] It should be noted that the power device in this embodiment can be a power transmission system, a power generation system, an inverter, or a converter. Of course, it can also be other devices or systems that use power modules.

[0119] In the description of this invention, it should be understood that "a plurality of" means two or more. Directional terms such as "front, back, up, down, left, right," "horizontal, vertical, perpendicular, horizontal," and "top, bottom" indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. These terms are used solely for the convenience of describing the invention and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the scope of protection of this invention. The directional terms "inner" and "outer" refer to the inner or outer contours relative to the outline of each component itself.

[0120] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0121] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore should not be construed as limiting the scope of protection of this invention.

[0122] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A power module, characterized by The application relates to a half-bridge assembly (10) comprising a substrate (11), a first conductive plate (12), a first chip (13) and a second chip (14), the first conductive plate (12) being arranged on the substrate (11), the first chip (13) having a first electrode part and a second electrode part, the second chip (14) having a third electrode part and a fourth electrode part, the first chip (13) being arranged on the first conductive plate (12), the first electrode part being in conductive connection with the first conductive plate (12); a direct-current positive terminal (20) arranged on the substrate (11), the direct-current positive terminal (20) comprising a first vertical connecting part (21) and a first horizontal connecting part (22) connected with the first vertical connecting part (21), the first vertical connecting part (21) being arranged on the first conductive plate (12) and being in conductive connection with the first conductive plate (12); a direct-current negative terminal (30) arranged on the substrate (11), the direct-current negative terminal (30) comprising a second vertical connecting part (31) and a second horizontal connecting part (32) connected with the second vertical connecting part (31), the second vertical connecting part (31) being in electrical connection with the third electrode part, the second horizontal connecting part (32) being arranged in a structure overlapping at least part of the first horizontal connecting part (22) in the thickness direction of the substrate (11); and an alternating-current terminal (40) in conductive connection with the second electrode part and the fourth electrode part. The half-bridge assembly (10) further comprises a second conductive plate (15) arranged on the substrate (11), the second chip (14) being arranged on the second conductive plate (15), the second electrode part being in electrical connection with the second conductive plate (15), the fourth electrode part being in electrical connection with the second conductive plate (15), the alternating-current terminal (40) being in conductive connection with the second conductive plate (15), a projection of the first horizontal connecting part (22) on the substrate (11) being a first projection area, a projection of the second horizontal connecting part (32) on the substrate (11) being a second projection area, an overlapping part of the first projection area and the second projection area being an overlapping projection area, a distance between two sides of the overlapping projection area in the direction from the first conductive plate (12) to the second conductive plate (15) being a first distance a, a distance between two side walls of the substrate (11) being a second distance b, a maximum value of the first distance a being greater than or equal to the second distance b. ​ ​ ​ 2. The power module of claim 1, wherein, ​ 3. The power module of claim 2, wherein, The power module further comprises an upper half-bridge (50), the upper half-bridge (50) comprising two of the half-bridge assemblies (10) arranged in parallel, a part of the first lateral connecting part (22) being located directly above one of the two half-bridge assemblies (10) of the upper half-bridge (50), another part of the first lateral connecting part (22) being located directly above the other of the two half-bridge assemblies (10) of the upper half-bridge (50), a part of the second lateral connecting part (32) being located directly above one of the two half-bridge assemblies (10) of the upper half-bridge (50), another part of the second lateral connecting part (32) being located directly above the other of the two half-bridge assemblies (10) of the upper half-bridge (50).

4. The power module of claim 1, wherein, The first lateral connecting part (22) comprises a first lateral connecting plate (221), and the second lateral connecting part (32) comprises a second lateral connecting plate (321).

5. The power module of claim 4, wherein, The first lateral connecting plate (221) comprises a first plate segment (2211), one side of the first plate segment (2211) being connected with the first vertical connecting part (21), the distance between the two side walls of the first plate segment (2211) gradually increasing in a direction from the side of the first plate segment (2211) connected with the first vertical connecting part (21) to the side of the first plate segment (2211) away from the first vertical connecting part (21), and the maximum value of the third distance c being less than or equal to the minimum value of the fourth distance d.

6. The power module of claim 5, wherein, The first lateral connecting plate (221) further comprises a second plate segment (2212), the first plate segment (2211) being connected between the first vertical connecting part (21) and the second plate segment (2212), the distance between the two side walls of the second plate segment (2212) gradually increasing in a direction from the first plate segment (2211) to the second plate segment (2212), and the maximum value of the third distance c being less than or equal to the minimum value of the fourth distance d.

7. The power module of claim 4, wherein, The second lateral connecting plate (321) comprises a third plate segment (3211), one side of the third plate segment (3211) being connected with the second vertical connecting part (31), the distance between the two side walls of the third plate segment (3211) gradually increasing in a direction from the side of the third plate segment (3211) connected with the second vertical connecting part (31) to the side of the third plate segment (3211) away from the second vertical connecting part (31).

8. The power module of claim 1, wherein, The half-bridge assembly (10) further comprises a second conductive plate (15) and a third conductive plate (16), the second conductive plate (15) is located between the first conductive plate (12) and the third conductive plate (16), the second chip (14) is arranged on the second conductive plate (15), the fourth electrode part is electrically connected with the second conductive plate (15), the alternating current terminal (40) is conductively connected with the second conductive plate (15), and the second vertical connecting part (31) is arranged on the third conductive plate (16).

9. The power module of claim 8, wherein, The second vertical connecting part (31) is arranged at the first end of the first conductive plate (12), the first vertical connecting part (21) is arranged at the first end of the third conductive plate (16), the alternating current terminal (40) is connected with the first end of the second conductive plate (15), the first end of the first conductive plate (12) is arranged adjacent to the first end of the second conductive plate (15), and the second conductive plate (15) is arranged adjacent to the first end of the third conductive plate (16).

10. The power module of claim 8, wherein, An end of the second horizontal connecting part (32) is provided with a avoiding part (322) for avoiding the alternating current terminal (40).

11. The power module of any one of claims 1 to 10, characterized in that, The second horizontal connecting part (32) is arranged on the side of the first horizontal connecting part (22) away from the substrate (11).

12. The power module of any one of claims 1 to 10, characterized in that, The power module further comprises symmetrically arranged upper half-bridge (50) and lower half-bridge (60), the upper half-bridge (50) comprises two half-bridge assemblies (10) arranged at intervals, the lower half-bridge (60) comprises two half-bridge assemblies (10) arranged at intervals, one of the two half-bridge assemblies (10) of the upper half-bridge (50) is a first half-bridge assembly, one of the two half-bridge assemblies (10) of the lower half-bridge (60) is a second half-bridge assembly, and the first end of the first conductive plate (12) of the first half-bridge assembly is arranged adjacent to the first end of the first conductive plate (12) of the second half-bridge assembly.

13. The power module of any one of claims 1 to 10, characterized by The alternating current terminal (40) comprises a third vertical connecting part (41) and a third horizontal connecting part (42) connected with the third vertical connecting part (41), the third vertical connecting part (41) is conductively connected with the second electrode part and the fourth electrode part, the third horizontal connecting part (42) comprises a fourth plate segment (421), the distance between the two side walls of the fourth plate segment (421) gradually increases from the side of the fourth plate segment (421) connected with the third vertical connecting part (41) to the side of the fourth plate segment (421) away from the third vertical connecting part (41).

14. The power module of any one of claims 1 to 10, characterized by The power module further comprises a first support isolation block (70), and the first support isolation block (70) is arranged between the first horizontal connecting part (22) and the second horizontal connecting part (32).

15. The power module of any one of claims 1 to 10, characterized by The power module further comprises a second support isolation block (80), the DC negative terminal (30) further comprises an overhanging connecting part (33) connected with the second transverse connecting part (32), the second support isolation block (80) is arranged on the side of the second transverse connecting part (32) away from the base plate (11), and part of the structure of the overhanging connecting part (33) is arranged on the second support isolation block (80).

16. The power module of any one of claims 1 to 10, characterized by The power module further comprises a shell (90) and a third support isolation block (100), the shell (90) comprises a bottom plate (91) and a surrounding plate (92), the base plate (11) is arranged on the bottom plate (91), the surrounding plate (92) is arranged on the bottom plate (91) and surrounds the outside of the base plate (11), and the third support isolation block (100) is arranged on the inner wall of the surrounding plate (92), and the third support isolation block (100) is supported on the side of the first transverse connecting part (22) close to the base plate (11).

17. An electric power device comprising a power module, characterized by The power module is the power module according to any one of claims 1 to 16.

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