Perovskite photovoltaic cell, photovoltaic module, power utilization device and power generation device

Abstract

The invention provides a perovskite photovoltaic cell, a photovoltaic module, a power utilization device and a power generation device. The perovskite photovoltaic cell comprises a first electrode, a first carrier transport layer, a perovskite light absorption layer, a passivation layer, a second carrier transport layer and a second electrode which are stacked in the thickness direction of the perovskite photovoltaic cell, the passivation layer comprises a polysulfide compound, and the polysulfide compound contains carbon-sulfur double bonds. The photovoltaic cell provided by the invention has relatively high photoelectric conversion efficiency.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, specifically to a perovskite photovoltaic cell, photovoltaic module, electrical device, and power generation device. Background Technology

[0002] Perovskite photovoltaic cells are photovoltaic cells that use perovskite-type organometal halide semiconductors as light-absorbing materials. They have excellent photoelectric properties and have brought new possibilities and hope to photovoltaic power generation.

[0003] Improving the photoelectric conversion efficiency of perovskite photovoltaic cells is one of the most pressing issues to be addressed in the production process. Summary of the Invention

[0004] To address the aforementioned technical problems, this application provides a perovskite photovoltaic cell, a photovoltaic module, an electrical device, and a power generation device.

[0005] In a first aspect, this application provides a perovskite photovoltaic cell, which includes a first electrode, a first carrier transport layer, a perovskite light-absorbing layer, a passivation layer, a second carrier transport layer, and a second electrode stacked along the thickness direction of the perovskite photovoltaic cell, wherein the passivation layer includes a polysulfide compound containing carbon-sulfur double bonds.

[0006] In this application, a polysulfide compound containing a carbon-sulfur double bond is used to passivate the perovskite light-absorbing layer. The sulfur atom in the carbon-sulfur double bond (C=S) of the polysulfide compound molecule can react with uncoordinated metal ions such as Pb on the surface of the perovskite light-absorbing layer. 2+ Sn 2+ Isocoordinated formation of metal ions and sulfur atoms (such as Pb-S bonds, Sn-S bonds, etc.) reduces surface defects in the perovskite light-absorbing layer and decreases oxygen binding sites on its surface. This, in turn, reduces water-oxygen contact oxidation on the perovskite light-absorbing layer surface, thereby improving its stability and photoelectric conversion efficiency. Furthermore, the high bond strength of the formed Pb-S isocoordinated bonds effectively suppresses the aging and degradation of the perovskite structure, further stabilizing the perovskite crystal structure and enhancing the stability of perovskite photovoltaic cells.

[0007] In some embodiments, the polysulfide compound comprises a compound as shown in Formula 1:

[0008]

[0009] In Equation 1,

[0010] M1 and M2 each independently include alkyl, substituted or unsubstituted phenyl, substituted or unsubstituted phenylamino, amino, nitrogen-containing heterocyclic group or carboxyl group;

[0011] R1 includes n1, n2, and n3 are each an independent integer from 0 to 8, and R3 includes alkylene groups;

[0012] R2 includes n4 is any integer from 0 to 10, and R4 includes alkylene groups; n5 is 0 or 1, and R5 includes...

[0013] In some embodiments, when M1 is a nitrogen-containing heterocyclic group, the nitrogen atom in the nitrogen-containing heterocyclic group is connected to the carbon atom in the carbon-sulfur double bond.

[0014] In some embodiments, the polysulfide compound comprises compounds as shown in Formula 1-1:

[0015]

[0016] In some embodiments, the compound represented by Formula 1-1 includes one or more of the compounds represented by Formulas 1-1a to 1-1d as follows:

[0017]

[0018] In some embodiments, the polysulfide compound comprises compounds as shown in Formulas 1-2:

[0019]

[0020] In some embodiments, the compounds shown in Formulas 1-2 include one or more of the compounds shown in Formulas 1-2a to 1-2i:

[0021]

[0022]

[0023] In some embodiments, the polysulfide compound comprises compounds as shown in Formulas 1-3:

[0024]

[0025] In some embodiments, the compounds represented by formulas 1-3 include those represented by formulas 1-3a as follows:

[0026]

[0027] In some embodiments, the polysulfide compound has a molecular weight of 100 to 1500.

[0028] In some embodiments, the thickness of the passivation layer is from 0.5 nm to 10 nm.

[0029] In some embodiments, one of the first carrier transport layer and the second carrier transport layer is an electron transport layer and the other is a hole transport layer.

[0030] Secondly, this application provides a photovoltaic module, including the perovskite photovoltaic cell of the first aspect of this application.

[0031] Thirdly, this application provides an electrical device, including a photovoltaic module according to the second aspect of this application.

[0032] Fourthly, this application provides a power generation device, including a photovoltaic module according to the second aspect of this application. Attached Figure Description

[0033] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of the structure of a perovskite photovoltaic cell in one embodiment of this application.

[0035] The accompanying drawings are not necessarily drawn to scale.

[0036] Explanation of reference numerals in the attached figures: 1. First electrode; 2. First carrier transport layer; 3. Perovskite light-absorbing layer; 4. Passivation layer; 5. Second carrier transport layer; 6. Second electrode. Detailed Implementation

[0037] The following detailed description, with appropriate reference to the accompanying drawings, specifically discloses embodiments of the battery cell, battery, and power-consuming device of this application. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0038] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0039] Unless otherwise specified, all embodiments and optional embodiments of this application may be combined with each other to form new technical solutions, and such technical solutions should be considered to be included in the disclosure of this application.

[0040] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, optionally sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the method may also include step (c), indicating that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0041] Unless otherwise specified, the terms "connected" and "linked" in this application should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0042] In this application, "multiple" refers to two or more, including two. "Multiple types" refers to two or more, including two.

[0043] A perovskite photovoltaic cell generally consists of a perovskite light-absorbing layer, a hole transport layer, an electron transport layer, and an electrode layer. The perovskite light-absorbing layer, hole transport layer, and electron transport layer are collectively referred to as the cell's functional layers. The working process of a perovskite photovoltaic cell mainly includes: exciton generation and separation, free carrier transport, carrier collection, and current generation. Specifically, in a perovskite photovoltaic cell, sunlight is absorbed by the perovskite light-absorbing layer, which absorbs photons to generate excitons. Due to the low Coulomb force binding of the perovskite light-absorbing layer, the excitons subsequently separate into free electrons and holes. The separated free carriers are transported within the perovskite light-absorbing layer and then through the transport layer. The electron transport layer acts as a transport layer for electrons and a barrier for holes, while the hole transport layer acts as a transport layer for holes and a barrier for electrons. The electrons and holes transported through the transport layer are collected by the electrodes to form current and voltage, respectively. The charge carriers generated in the hole transport layer and the electron transport layer are collected by the longitudinal guide strips and then led out through the busbars. The busbars pass through the lead-out holes on the back plate and are connected to the junction box, thereby conducting out the photocurrent.

[0044] Based on the polarity of the electrodes on the light-receiving side, perovskite photovoltaic cells can be divided into conventional and inverted structures. In a conventional perovskite photovoltaic cell, light enters from the transparent conductive substrate, passes through the electron transport layer, and reaches the perovskite absorber layer. The absorber layer absorbs the light, generating electron-hole pairs. Electrons are collected by the electron transport layer and transported to the transparent conductive substrate, while holes travel through the hole transport layer to the metal electrode, thus forming a photocurrent. In an inverted perovskite solar cell, the arrangement of the functional layers is reversed compared to a conventional structure. In the inverted structure, light enters from the transparent conductive substrate, first passes through the hole transport layer, and then reaches the perovskite absorber layer. The absorber layer absorbs the light, generating electron-hole pairs; electrons flow to the metal electrode, while holes flow to the transparent conductive substrate.

[0045] Due to the intrinsic crystal quality of perovskite, the interface between the perovskite light-absorbing layer and the transport layer is a crucial site for nonradiative recombination. On one hand, interface defects at the interface can trap carriers during transport, severely impacting carrier transport efficiency. On the other hand, the exposed upper surface of the perovskite transport layer is in relatively prolonged contact with the atmosphere during the manufacturing and operation of perovskite photovoltaic cells. Water and oxygen molecules can more easily enter the bulk phase from the upper surface of the perovskite light-absorbing layer, undergoing oxidation on the perovskite surface. This promotes the degradation of the perovskite lattice into the secondary phase, deteriorating the stability of the perovskite photovoltaic cell and consequently leading to a significant reduction in its photoelectric conversion efficiency.

[0046] In view of the above problems, this application provides a perovskite photovoltaic cell that improves the carrier transport efficiency and enhances the photoelectric conversion efficiency of the perovskite photovoltaic cell by passivating perovskite interface defects and reducing water-oxygen contact oxidation on the surface of the perovskite light-absorbing layer.

[0047] Perovskite photovoltaic cells

[0048] An embodiment of the first aspect of this application provides a perovskite photovoltaic cell, referring to... Figure 1 The perovskite photovoltaic cell may include a first electrode 1, a first carrier transport layer 2, a perovskite light-absorbing layer 3, a passivation layer 4, a second carrier transport layer 5, and a second electrode 6 stacked along the thickness direction of the perovskite photovoltaic cell. The passivation layer 4 includes a polysulfide compound containing carbon-sulfur double bonds.

[0049] In this application, polysulfide compounds refer to compounds containing at least two sulfur atoms in their molecular structure. The perovskite light-absorbing layer is passivated using polysulfide compounds containing carbon-sulfur double bonds. The sulfur atoms in the carbon-sulfur double bonds (C=S) of the polysulfide compound molecule can interact with uncoordinated metal ions such as Pb on the surface of the perovskite light-absorbing layer. 2+ Sn 2+ Isocoordinated formation of metal ions and sulfur atoms (such as Pb-S bonds, Sn-S bonds, etc.) reduces surface defects in the perovskite light-absorbing layer and decreases oxygen binding sites on its surface. This, in turn, reduces water-oxygen contact oxidation on the perovskite light-absorbing layer surface, improving its stability and photoelectric conversion efficiency. Furthermore, the high bond strength of the formed Pb-S isocoordinated bonds effectively suppresses the aging and degradation of the perovskite structure, further stabilizing the perovskite crystal structure and enhancing the stability of perovskite photovoltaic cells.

[0050] In some embodiments, the polysulfide compound may include a compound as shown in Formula 1:

[0051]

[0052] In Equation 1,

[0053] M1 and M2 each independently include alkyl, substituted or unsubstituted phenyl, substituted or unsubstituted phenylamino, amino, nitrogen-containing heterocyclic group or carboxyl group;

[0054] R1 includes n1, n2, and n3 are each an independent integer from 0 to 8, and R3 includes alkylene groups;

[0055] R2 includes n4 is any integer from 0 to 10, and R4 includes alkylene groups; n5 is 0 or 1, and R5 includes...

[0056] In some embodiments, R3 and R4 may each independently comprise a straight-chain or branched alkylene group having 1 to 10 carbon atoms.

[0057] Polysulfide compounds with the structure shown in Formula 1 may contain at least one carbon-sulfur double bond and at least one single sulfur atom (—S—) in their molecular structure. These single sulfur atoms can break during high-temperature annealing to form free sulfur atoms, which can then react with uncoordinated metal ions such as Pb in the perovskite light-absorbing layer. 2+ The reaction forms sulfides (such as PbS), which can reduce the number of free metal ions on the surface of the perovskite light-absorbing layer, reduce perovskite surface defects, reduce perovskite surface oxidation, and improve the structural stability and photoelectric conversion efficiency of perovskite photovoltaic cells.

[0058] In some embodiments, when M1 is a nitrogen-containing heterocyclic group, the nitrogen atom in the nitrogen-containing heterocyclic group can be attached to the carbon atom in the carbon-sulfur double bond.

[0059] In some embodiments, the polysulfide compound includes compounds as shown in Formula 1-1:

[0060]

[0061] The compound shown in Formula 1-1 has a carbon-sulfur double bond and at least one single sulfur atom in its molecular structure. Polysulfide compounds with this structure form a passivation layer on the surface of the perovskite light-absorbing layer, which can passivate and modify the surface of the perovskite light-absorbing layer, reduce surface defects of the perovskite light-absorbing layer, and improve the structural stability and photoelectric conversion efficiency of perovskite photovoltaic cells.

[0062] In some embodiments, the compound represented by Formula 1-1 may include one or more of the compounds represented by Formula 1-1a to Formula 1-1d as follows:

[0063]

[0064] In some embodiments, the polysulfide compound may include compounds as shown in Formulas 1-2:

[0065]

[0066] The molecular structure of polysulfide compounds, as shown in Formula 1-2, can have two carbon-sulfur double bonds and at least one single sulfur atom.

[0067] In some embodiments, the polysulfides represented by formulas 1-2 may include one or more of the compounds described in formulas 1-2a to 1-2i:

[0068]

[0069] In some embodiments, the polysulfide compound may include compounds as shown in Formulas 1-3:

[0070]

[0071] Polysulfide compounds as shown in Formulas 1-3 may include at least four carbon-sulfur double bonds and at least one single-bonded sulfur atom.

[0072] In some embodiments, the polysulfide compounds shown in Formulas 1-3 include compounds shown in Formulas 1-3a as follows:

[0073]

[0074] In some embodiments, the molecular weight of the polysulfide compound can be from 100 to 1500.

[0075] In some embodiments, the thickness of the passivation layer can be from 0.5 nm to 10 nm. Exemplarily, the thickness of the passivation layer can be 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1.0 nm, 1.5 nm, 2.0 nm, 2.5 nm, 3.0 nm, 3.5 nm, 4.0 nm, 4.5 nm, 5.0 nm, 5.5 nm, 6.0 nm, 6.5 nm, 7.0 nm, 7.5 nm, 8.0 nm, 8.5 nm, 9.0 nm, 9.5 nm, 10.0 nm, or any range of the above values. Optionally, the thickness of the passivation layer can be from 1.0 nm to 5.0 nm, more preferably from 1.5 nm to 3.5 nm.

[0076] In some embodiments, the passivation layer can be prepared by any one of spin coating, blade coating, spray coating, vapor deposition, printing, spray pyrolysis, slot coating, and atomic deposition.

[0077] In some embodiments, the material of the perovskite light-absorbing layer may include one or more of inorganic halide perovskite materials, organic halide perovskite materials, and inorganic-organic hybrid halide perovskite materials.

[0078] In some embodiments, the chemical formula of the perovskite light-absorbing layer material can be ABX3 or A2CDX6, wherein...

[0079] A is an inorganic, organic, or mixed organic-inorganic cation, and may be a methylamine ion (CH3NH3). + (MA) + ), formamidinium ion (HC(NH2)2) + (FA) + ), cesium ions (Cs) + ), rubidium ions (Rb + One or more of the following, further optionally methylamine ions (CH3NH3)+ ) or formamidinium ion (HC(NH2)2 + );

[0080] B is an inorganic, organic, or mixed organic-inorganic cation, and optionally a divalent metal ion Pb. 2+ and Sn 2+ At least one of them;

[0081] C is an inorganic, organic, or mixed organic-inorganic cation, optionally a monovalent metal ion Ag. + wait;

[0082] D is an inorganic, organic, or organic-inorganic mixed cation, optionally a trivalent metal ion bismuth cation Bi. 3+ Antimony cation Sb 3+ Indium cations In 3+ wait;

[0083] X is an inorganic, organic, or organic-inorganic mixed anion, optionally one or more of a halide anion and a halide-like anion, and more preferably a bromide ion (Br). - ) or iodide ions (I - ).

[0084] In some embodiments, the material of the perovskite light-absorbing layer may include, but is not limited to, CH3NH3PbI3 (abbreviated as MAPbI3), CH(NH2)2PbI3 (abbreviated as FAPbI3), and Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 (abbreviated as CsFAMA), Cs 0.5 FA 0.5 At least one of PbCl2I, FAPbCl3, CsPbI3, CsPbI2Br, and CsPbIBr2.

[0085] In some embodiments, the band gap of the perovskite light-absorbing layer can be from 1.20 eV to 2.30 eV.

[0086] In some embodiments, the thickness of the perovskite light-absorbing layer can be from 400 nm to 1000 nm. For example, the thickness of the perovskite light-absorbing layer can be 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 100 nm, or any range of the above values; the thickness of the perovskite light-absorbing layer can be selected from 500 nm to 800 nm.

[0087] In some embodiments, the method for preparing the perovskite light-absorbing layer may include any one of chemical deposition, vapor deposition, magnetron sputtering, or coating.

[0088] In some embodiments, one of the first carrier transport layer and the second carrier transport layer is an electron transport layer and the other is a hole transport layer.

[0089] The electron transport layer serves to efficiently transport free electrons generated by the perovskite layer, effectively block the passage of free holes, and form an ohmic contact at the interface with the perovskite active layer.

[0090] In some embodiments, the electron transport material in the electron transport layer may include, but is not limited to, one or more of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, methoxytriphenylamine-fluoroformamidine (OMeTPA-FA), calcium titanate (CaTiO3), lithium fluoride (LiF), calcium fluoride (CaF2), poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid (PEDOT:PSS), poly3-hexylthiophene (P3HT), triphenylamine with a triphenylene core (H101), and 3,4-ethylenedioxythiophene-methoxytriphenylamine. (EDOT-OMeTPA), N-(4-aniline)carbazole-spirobisfluorene (CzPAF-SBF), polythiophene, metal oxides (which can be referred to as first metal oxides), silicon oxide (SiO2), strontium titanate (SrTiO3), calcium titanate, lithium fluoride, calcium fluoride, cuprous thiocyanate (CuSCN), etc.; wherein, the metal element in the first metal oxide may include one or more of Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr.

[0091] In some embodiments, the thickness of the electron transport layer can be from 30 nm to 120 nm, and optionally from 40 nm to 60 nm. Exemplarily, the thickness of the electron transport layer can be 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, or any range of the above values.

[0092] In some embodiments, the material of the hole transport layer may include, but is not limited to, one or more of 2,2',7,7'-tetratetra(N,N-p-methoxyanilino)-9,9'-spirodifluorene, methoxytriphenylamine-fluoroformamidinium, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid (PEDOT:PSS), poly3-hexylthiophene (P3HT), triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirodifluorene, polythiophene, phosphate monomers, carbazole monomers, sulfonic acid monomers, triphenylamine monomers, aromatic monomers, metal oxides (which may be referred to as second metal oxides), and cuprous thiocyanate (CuSCN), wherein the metal element in the second metal oxide may include one or more of Ni, Mo, and Cu.

[0093] In some embodiments, the thickness of the hole transport layer can be from 5 nm to 50 nm, and optionally from 20 nm to 50 nm.

[0094] In some embodiments, the hole transport layer can be prepared by methods including but not limited to magnetron sputtering, atomic deposition, and spin coating.

[0095] In some embodiments, the perovskite light-absorbing layer further includes a lower passivation layer on the side adjacent to the hole transport layer. The material of the lower passivation layer may include molecules having π-π conjugation and one end anchorable to the perovskite light-absorbing layer. Optionally, the material of the lower passivation layer may include one or more of 3-triethoxysilylpropionitrile, 2-aminothiazol-4-acetic acid, 1-hydroxy-4-carbonylbenzene, MeO-4PACz ([4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid), MeO-2PACz ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), and MeO-4CACz ([4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]carboxylic acid).

[0096] In some embodiments, the electrode layer may include a first electrode and a second electrode.

[0097] In some embodiments, the first electrode may be a transparent electrode.

[0098] In some embodiments, the material of the first electrode may include one or more of indium tin oxide, fluorine-doped indium tin oxide, tungsten-doped indium oxide, indium zinc oxide, boron-doped zinc oxide, and aluminum-doped zinc oxide.

[0099] In some embodiments, the material of the second electrode can be a metallic electrode or a transparent electrode. Optionally, the material of the second electrode may include one or more of silver (Ag), gold (Au), copper (Cu), aluminum (Al), graphite, indium tin oxide, and indium zinc oxide.

[0100] In some embodiments, the perovskite photovoltaic cell further includes a substrate disposed on the side of the transparent conductive electrode away from the other electrode. The substrate structure can be made of rigid material or flexible material. In some embodiments, the substrate structure can be made of transparent glass. The material of the substrate structure can be specifically set as needed, and this application does not limit it.

[0101] As an example, perovskite photovoltaic cells can be prepared by the following method:

[0102] S10, a hole transport layer is formed on the first electrode;

[0103] S20, a perovskite light-absorbing layer is formed on the hole transport layer;

[0104] S30, a passivation layer is formed on the perovskite light-absorbing layer;

[0105] S40, an electron transport layer is formed on the passivation layer;

[0106] S50, a second electrode is formed on the electron transport layer;

[0107] The passivation layer includes a polysulfide compound containing carbon-sulfur double bonds.

[0108] In some embodiments, step S30 may include:

[0109] Provide passivation solutions containing polysulfide compounds;

[0110] A passivation solution is applied to the surface of the perovskite light-absorbing layer, and then annealed to form a passivation layer.

[0111] In some embodiments, the content of polysulfide compounds in the passivation solution can be from 0.1 mg / mL to 5 mg / mL. Exemplarily, the content of polysulfide compounds in the passivation solution can be 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.4 mg / mL, 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, 1.0 mg / mL, 1.2 mg / mL, 1.5 mg / mL, 1.8 mg / mL, 2.0 mg / mL, 2.5 mg / mL, 2.8 mg / mL, 3.0 mg / mL, 3.5 mg / mL, 3.8 mg / mL, 4.0 mg / mL, 4.2 mg / mL, 4.5 mg / mL, 4.8 mg / mL, 5.0 mg / mL, or any range of the above values. The thickness of the passivation layer can be adjusted by changing the content of polysulfide compounds in the passivation solution.

[0112] In some embodiments, the solvent used to disperse the polysulfide compound in the passivation solution may include one or more of ethanol, isopropanol, chlorobenzene, toluene, ethyl acetate, methanol, acetonitrile, chloroform, isopropyl ether, and diethyl ether.

[0113] In some embodiments, the annealing temperature can be from 60°C to 150°C. Exemplarily, the annealing temperature can be 60°C, 65°C, 70°C, 75°C, 0°C, 5°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 125°C, 130°C, 135°C, 140°C, 145°C, 150°C, or any range of the above values.

[0114] In some embodiments, the annealing time can be from 5 min to 30 min. Exemplarily, the annealing time can be 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, 20 min, 21 min, 22 min, 23 min, 24 min, 25 min, 26 min, 27 min, 28 min, 29 min, 30 min, or any range of the above values.

[0115] It is understood that the preparation methods of the above layers may include, but are not limited to, any one of the following: chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, thermal evaporation, atomic layer deposition, magnetron sputtering, precursor liquid coating, precursor liquid slot coating, and precursor liquid scraping. Those skilled in the art can select according to actual needs. In addition to the above-mentioned setup methods, mechanical pressing can also be used to form at least two interconnected functional layers at one time.

[0116] photovoltaic modules

[0117] An embodiment of the second aspect of this application provides a photovoltaic module, which includes the perovskite photovoltaic cell of the first aspect of this application.

[0118] A photovoltaic (PV) module refers to a solar cell module, which is an overall module comprising multiple perovskite PV cells. This includes several cell strings, each of which can contain multiple perovskite PV cells connected in series via connectors such as solder ribbons.

[0119] In addition to cell strings, photovoltaic modules may also include front glass, front encapsulating film, back encapsulating film, and back glass. As an example, a photovoltaic module includes front glass (substrate), front encapsulating film, cell strings, back encapsulating film, and back glass stacked sequentially along the thickness direction.

[0120] Electrical appliances

[0121] An embodiment of the third aspect of this application provides an electrical device that includes a photovoltaic module according to the second aspect of this application, the photovoltaic module being used to provide electrical energy.

[0122] Electrical appliances can take many forms, such as electric vehicles, ships, spacecraft, solar water heaters, and solar energy.

[0123] Power generation unit

[0124] An embodiment of the fourth aspect of this application provides a power generation device that includes a photovoltaic module according to the second aspect of this application.

[0125] Example

[0126] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0127] Example 1

[0128] A perovskite photovoltaic cell includes a transparent substrate (first electrode), a hole transport layer, a perovskite light-absorbing layer, a passivation layer, an electron transport layer, and a second electrode stacked along the thickness direction of the perovskite photovoltaic cell, and is prepared by the following method:

[0129] S10, take an FTO conductive glass with a specification of 2cm×2cm, and remove 1μm of thickness by laser etching at a distance of 0.35cm from the left and right ends to ensure that the glass substrate is exposed; then clean the surface with acetone and isopropanol twice in sequence, then immerse it in deionized water for ultrasonic treatment for 10min, then dry it in a drying oven, and place it in a glove box (nitrogen atmosphere) to serve as a transparent substrate.

[0130] S20, to prepare a hole transport layer, 0.25 mg of [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid (MeO-4PACz) was added to 1 mL of ethanol solvent and stirred for 12 h, then filtered. The ethanol solution of MeO-4PACz was spin-coated onto a transparent substrate (spin-coating speed 4000 rpm, spin-coating time 30 s), and then transferred to a hot plate and annealed at 100 °C for 10 min to form a hole transport layer with a thickness of 5 nm.

[0131] S30, to prepare a perovskite light-absorbing layer, 19 mg of CsI, 24 mg of MAI, 219 mg of FAI, and 692 mg of PbI2 were added to 1 mL of a mixed solvent of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio of 4:1). The mixture was stirred at 600 rpm for 8 h on a magnetic stirrer and then filtered to obtain a perovskite precursor solution. 100 μL of the above perovskite precursor solution was spin-coated onto the hole transport layer (first spin-coated at 2000 rpm and 200 rpm / s for 10 s, then spin-coated at 4000 rpm and 1000 rpm / s for 25 s), then 200 μL of chlorobenzene was added dropwise onto the spin-coated perovskite precursor solution, and then the above perovskite precursor solution was spin-coated again at 4000 rpm for 15 s. Then it was transferred to a hot stage and annealed at 100 °C for 15 min to form a perovskite light-absorbing layer with a thickness of 900 nm.

[0132] S40, prepare a passivation layer by depositing a 3nm thick passivation layer on the perovskite light-absorbing layer using a evaporation equipment with a polysulfide compound.

[0133] S50, to prepare an electron transport layer, a 25 nm thick layer of fullerene C60 is deposited on the passivation layer using a vapor deposition equipment, and then a 7 nm thick layer of bath copper (BCP) is deposited to form an electron transport layer.

[0134] S60, prepare the second electrode by evaporating a 100nm layer of metallic copper (Cu) on the electron transport layer to form the second electrode layer.

[0135] Examples 2 to 17

[0136] The difference from Example 1 is that the structure of the polysulfide compound in the passivation layer and / or the parameters of the passivation layer are different, as detailed in Table 1.

[0137] Table 1

[0138]

[0139]

[0140]

[0141] Comparative Example 1

[0142] The difference from Example 1 is that no passivation layer is provided; otherwise, they are the same as in Example 1.

[0143] Test section

[0144] 1. Photoelectric conversion efficiency

[0145] Using a Keithley 2400SMU under standard simulated sunlight (AM 1.5G, 100mW / cm²) 2 Under irradiation, the battery performance was tested, and the JV curve was obtained;

[0146] Based on the JV curve and the data fed back from the testing equipment, the photoelectric conversion efficiency (PCE) of the battery is calculated using the following formula:

[0147] PCE = Voc × Jsc × FF, in % (percentage).

[0148] FF is the fill factor of the battery, FF = (Vmpp × Jmpp) / (Voc × Jsc), and the unit is %;

[0149] Voc is the open-circuit voltage, measured in volts (V).

[0150] Jsc is the short-circuit current, measured in mA / cm². 2 ;

[0151] Vmpp is the battery's maximum power point voltage, measured in volts (V).

[0152] Jmpp is the battery's maximum power point current, measured in mA.

[0153] 2. Battery stability

[0154] Perovskite solar cells were stored in a nitrogen glove box at 25°C to protect them from light. The change in their photoelectric conversion efficiency was tracked over time. The time required for their photoelectric conversion efficiency to decay to 80% of the initial efficiency was recorded as T80 (in hours). The value of this parameter represents the stability of the perovskite solar cell.

[0155] The test results are detailed in Table 2.

[0156] Table 2

[0157]

[0158]

[0159] Based on the data in Table 2, the polysulfide compounds provided in this application embodiment, when used for passivation treatment on the perovskite light-absorbing layer, can effectively improve the photoelectric conversion efficiency and stability of perovskite photovoltaic cells.

[0160] Although this application has been described with reference to optional embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A perovskite photovoltaic cell, characterized in that, The perovskite photovoltaic cell includes a first electrode, a first carrier transport layer, a perovskite light-absorbing layer, a passivation layer, a second carrier transport layer, and a second electrode which are stacked in the thickness direction of the perovskite photovoltaic cell, The passivation layer includes a polysulfur compound containing a carbon-sulfur double bond.

2. The perovskite photovoltaic cell of claim 1, wherein, The polysulfur compound includes a compound as shown in Formula 1: In Formula 1, M1 and M2 each independently include an alkyl group, a substituted or unsubstituted phenyl group, a substituted or unsubstituted phenylamino group, an amine group, a nitrogen-containing heterocyclic group, or a carboxyl group. R1comprises or n1, n2, and n3 are each independently any integer from 0 to 8, and R3comprises an alkylene group; R2comprises n4 is any integer from 0 to 10, R4 comprises an alkylene group; n5 is 0 or 1, R5 comprises 3. The perovskite photovoltaic cell of claim 2, wherein, When M1 is a nitrogen-containing heterocyclic group, the nitrogen atom in the nitrogen-containing heterocyclic group is connected to the carbon atom in the carbon-sulfur double bond.

4. The perovskite photovoltaic cell according to claim 2 or 3, characterized in that, The polysulfur compound includes a compound as shown in Formula 1-1:

5. The perovskite photovoltaic cell of claim 4, wherein, The compound as shown in Formula 1-1 includes one or more of the following compounds as shown in Formula 1-1a to Formula 1-1d:

6. The perovskite photovoltaic cell according to any of claims 2 or 3, characterized in that, The polysulfur compound includes a compound as shown in Formula 1-2:

7. The perovskite photovoltaic cell according to claim 6, characterized in that, The compound as shown in Formula 1-2 includes one or more of the following compounds as shown in Formula 1-2a to Formula 1-2i:

8. The perovskite photovoltaic cell according to claim 2 or 3, characterized in that, The polysulfur compound includes a compound as shown in Formula 1-3:

9. The perovskite photovoltaic cell of claim 8, wherein, The compound as shown in Formula 1-3 includes a compound as shown in Formula 1-3a:

10. The perovskite photovoltaic cell according to any one of claims 1 to 9, characterized in that, The molecular weight of the polysulfur compound is 100 to 1500.

11. The perovskite photovoltaic cell according to any one of claims 1 to 10, characterized in that, The thickness of the passivation layer is 0.5 nm to 10 nm.

12. The perovskite photovoltaic cell according to any one of claims 1 to 11, characterized in that, One of the first carrier transport layer and the second carrier transport layer is an electron transport layer, and the other is a hole transport layer.

13. A photovoltaic module, characterized by, The perovskite photovoltaic cell according to any one of claims 1 to 12.

14. An electrical device, comprising: The photovoltaic module according to claim 13.

15. A power generation device characterized by comprising: The photovoltaic module according to claim 14.

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