Display device and manufacturing method thereof

Abstract

An embodiment discloses a display device and a method of manufacturing the same, the display device including: a substrate having a plurality of pixels disposed on one surface, and including a side surface as an etched surface; and an organic film disposed on the other surface of the substrate opposite to the one surface and including a plurality of etching patterns at positions corresponding to the etching surface.

Description

Technical Field

[0001] This manual relates to display devices and methods of manufacturing them. Background Technology

[0002] Display devices include various light-emitting devices within the display area, such as liquid crystal display (LCD) devices or organic or inorganic light-emitting devices. Such display devices may include a display panel on a glass substrate on which multiple light-emitting devices are formed, and a polarizing film disposed on the display panel.

[0003] Typically, when etching a substrate to separate multiple display devices disposed on the substrate, laser processing of a mask is used to determine the etching area of ​​the glass substrate. In this case, slight errors occur in positional accuracy because the mask is patterned using a laser.

[0004] The descriptions provided in this Background section should not be assumed to be prior art simply because they are mentioned in or associated with this section. The Background section may include information describing one or more aspects of the subject matter art. Summary of the Invention

[0005] Therefore, the inventors of this disclosure recognized the problems mentioned above and other limitations associated with the related art, and conducted various experiments to achieve a display device and a method of manufacturing the same, which can improve positional accuracy when etching a substrate using multiple etch patterns formed on an organic film, and adjust the etch shape of the etched surface in the etched area of ​​the substrate.

[0006] This specification is not limited to the foregoing aspects, and those skilled in the art will clearly understand from the following description other aspects not mentioned.

[0007] To achieve these and other aspects of the inventive concept, as implemented and broadly described herein, a display device may include: a substrate having a plurality of pixels disposed on one surface and including a side surface as an etched surface; and an organic film disposed on another surface of the substrate opposite to one surface and including a plurality of etched patterns at positions corresponding to the etched surfaces.

[0008] Another aspect of this disclosure is to provide a method for manufacturing a display device, the method comprising: forming a plurality of display units on one surface of a substrate; forming an organic film on another surface of the substrate opposite to the one surface; forming a plurality of etch patterns by patterning the organic film; and forming etch grooves along the etched areas by etching the substrate below the plurality of etch patterns.

[0009] According to this disclosure, by etching an organic film disposed on another surface of a substrate to form multiple etching patterns, and then using the etching patterns as an etching mask to etch portions of the substrate located in the etching area, the accuracy of the etching position on the substrate can be improved compared with laser processes.

[0010] According to this disclosure, by forming a side coating film on the etched surface of the substrate, light leakage can be prevented or reduced, and the edges of the display panel can be prevented or avoided from being visible.

[0011] According to this disclosure, since the etched surface of the substrate can be controlled by adjusting the width of the etched holes between the etched patterns of the organic film, the rigidity of the etched surface of the substrate can be improved, and accidents of workers being injured by sharp etched surfaces can be prevented or reduced.

[0012] According to this disclosure, by forming an organic film on another surface of the substrate to define an etched area for cutting the substrate, damage to the substrate can be prevented or reduced, and external impacts can be prevented or reduced from being transmitted to the display panel.

[0013] According to this disclosure, since an organic film with multiple etched patterns is formed on another surface of the substrate, it is not necessary to form a separate side coating film, which can reduce manufacturing processes and costs.

[0014] It should be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the claimed inventive concept. Attached Figure Description

[0015] The accompanying drawings may be included to provide a further understanding of the present disclosure and may be incorporated into and constitute a part of the present disclosure. The drawings illustrate embodiments of the present disclosure and, together with the description, serve to illustrate various principles of the present disclosure.

[0016] By describing in detail the exemplary embodiments of this specification with reference to the accompanying drawings, the above and other aspects, features, and effects of this specification will become clearer to those skilled in the art, in which:

[0017] Figure 1 This is a perspective view showing a display device according to an exemplary embodiment of this specification;

[0018] Figure 2 It is shown schematically. Figure 1 A diagram illustrating the construction of an example display panel;

[0019] Figure 3 It shows along Figure 1 Example of a cross-sectional view of line II′;

[0020] Figure 4 This is a flowchart illustrating a method for manufacturing a display device according to an exemplary embodiment of this specification;

[0021] Figures 5A to 5L This is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment of this specification;

[0022] Figure 6 This is a cross-sectional view showing the substrate etching of a display panel according to an example embodiment of this specification;

[0023] Figure 7 This is a cross-sectional view showing the substrate etching of a display panel according to an example embodiment of this specification;

[0024] Figure 8 This is a cross-sectional view showing the substrate etching of a display panel according to an example embodiment of this specification;

[0025] Figure 9 This is a cross-sectional view showing the substrate etching of a display panel according to an example embodiment of this specification;

[0026] Figure 10 This is a cross-sectional view showing the substrate etching of a display panel according to an example embodiment of this specification;

[0027] Figures 11A to 11C This is a cross-sectional view showing the etching process of the substrate of a display panel according to an example embodiment of this specification;

[0028] Figures 12A to 12C This is a cross-sectional view showing the etching process of the substrate of a display panel according to an example embodiment of this specification;

[0029] Figures 13A to 13C This is a cross-sectional view showing the etching process of the substrate of a display panel according to an example embodiment of this specification;

[0030] Figures 14A to 14C This is a cross-sectional view illustrating the etching process of the substrate of a display panel according to an exemplary embodiment of this specification; and

[0031] Figures 15A to 15C This is a cross-sectional view showing the etching process of the substrate of a display panel according to an example embodiment of this specification.

[0032] Throughout the accompanying drawings and detailed description, unless otherwise described, the same reference numerals should be understood to refer to the same elements, features, and structures. For clarity, illustrative purposes, and convenience, the dimensions, lengths, and thicknesses of layers, regions, and elements, and their illustrations, may be exaggerated. Detailed Implementation

[0033] Reference will now be made in detail to embodiments of this disclosure, examples of which are illustrated in the accompanying drawings. In the following description, detailed descriptions of well-known functions or configurations relevant to this document will be omitted where such description would be determined to unnecessarily obscure the gist of the inventive concept. The described progression of processing steps and / or operations is exemplary; however, the order of steps and / or operations is not limited to the order set forth herein and can be varied as is known in the art, except for steps and / or operations that must occur in a specific order. Similar reference numerals designate similar elements throughout. The names of corresponding elements used in the following description may be chosen solely for ease of writing and therefore may differ from the names used in actual products.

[0034] The advantages and features of this disclosure and its implementation methods should become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed below, but can be implemented in various different forms. The exemplary embodiments are provided only to enable those skilled in the art to fully understand the scope of this disclosure, and this disclosure is limited only by the scope of the appended claims.

[0035] The numbers, shapes, dimensions, ratios, angles, quantities, etc., disclosed in the accompanying drawings used to describe various exemplary embodiments of this disclosure are merely exemplary and are not limited to the matters shown in this disclosure. Throughout the specification, similar reference numerals refer to similar elements. Furthermore, in describing this disclosure, detailed descriptions of well-known technologies will be omitted or may be provided briefly when it is determined that such detailed descriptions may unnecessarily obscure the essential points of this disclosure. Any implementation described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other implementations.

[0036] Unless used with terms such as “only,” additional components may be added when using terms such as “comprising,” “having,” “including,” and “consisting of” as used in this disclosure. When a component is referred to in the singular, this includes cases where multiple components are included, unless otherwise specified. In interpreting a component, it is construed as including a range of errors or tolerances, even if no explicit description of such a range of errors or tolerances exists.

[0037] In describing positional relationships, for example, if the positional relationship between two components is described as "on top of," "above," "below," "below," "next to," etc., one or more other components may be located between the two components, unless more restrictive terms such as "closely," "exactly," or "directly" are used. Any element or layer referred to as being "on" or "above" another layer includes cases where another layer or other element is placed directly on or in the middle of another element. Furthermore, the terms "left side," "right side," "top," "bottom," "downward," "upward," "upper," "lower," etc., refer to any frame of reference.

[0038] When describing temporal relationships, such as when time sequence is described as "after," "following," "next," and "before," discontinuous situations may be included unless more restrictive terms such as "only," "immediately," or "directly" are used.

[0039] Furthermore, although terms such as "first," "second," "A," "B," "(a)," and "(b)" are used to describe various components, these components are not limited by these terms. For example, the substance, order, sequence, or number of corresponding elements should not be limited by these terms. These terms are only used to distinguish one component from another. Therefore, within the technical concept of this disclosure, the first component mentioned below can be the second component.

[0040] Throughout this disclosure, the same reference numerals refer to the same components.

[0041] When a component or layer is referred to as being "on," "above," "above," or "connected to" another component or layer, it should be understood to mean that the component or layer may be directly on or directly connected to the other component or layer, or that there may be intermediate components or layers. Furthermore, when a component is referred to as being "on" or "below" another component, it should be understood to mean that the components may be configured to be in direct contact with each other, or may be configured not to be in direct contact with each other.

[0042] The term "at least one" should be understood to include any and all combinations of one or more associated listed items. For example, "at least one of the first, second, and third items" means a combination of all items derived from two or more of the first, second, and third items, as well as the first, second, or third item alone.

[0043] Unless otherwise defined, the terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. It will also be further understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent, for example, with their meaning in the context of the relevant field, and should not be interpreted in an idealized or overly formal sense unless expressly defined herein. For example, the terms “component” or “unit” can be applied, for example, to a single circuit or structure, an integrated circuit, a computational block of a circuit arrangement, or any structure configured to perform the described functions, as would be understood by one of ordinary skill in the art.

[0044] The dimensions and thicknesses of each component shown in the accompanying drawings are for illustrative purposes only and are not intended to limit the dimensions and thicknesses of the components shown in this disclosure.

[0045] Features of each of the various exemplary embodiments of this disclosure may be partially or wholly linked or combined with each other, and may interact and drive each other in various technical ways. Furthermore, each embodiment may be implemented independently of each other or may be implemented together in a related relationship.

[0046] In this specification, the pixel circuitry and gating drivers formed on the display panel may include multiple transistors. The transistors may be implemented using oxide thin-film transistors (oxide TFTs) including oxide semiconductors, low-temperature polycrystalline silicon (LTPS) TFTs, etc. Furthermore, each transistor may be implemented using a p-channel TFT or an n-channel TFT.

[0047] A transistor is a three-electrode device comprising a gate, a source, and a drain. The source is the electrode that supplies charge carriers to the transistor. Furthermore, charge carriers in the transistor begin to flow from the source. The drain is the electrode that discharges charge carriers from the transistor to the outside. In a transistor, charge carriers flow from the source to the drain. In the case of an n-channel transistor, since the charge carriers are electrons, the source voltage is lower than the drain voltage, causing electrons to flow from the source to the drain. In this case, current flows from the drain to the source in an n-channel transistor. In the case of a p-channel transistor (PMOS), since the charge carriers are holes, the source voltage is higher than the drain voltage, causing holes to flow from the source to the drain. Furthermore, in a p-channel transistor, current flows from the source to the drain because holes flow from the source to the drain. It should be noted that the source and drain of a transistor are not fixed in position. For example, the source and drain can be interchanged depending on the applied voltage. Therefore, this embodiment is not limited to the source and drain of the transistor. In the following description, the source and drain of a transistor will be referred to as the first electrode and the second electrode.

[0048] In the following description, various exemplary embodiments of the display device according to this specification will be described with reference to the accompanying drawings. When assigning reference numerals to components in each figure, the same figures may be assigned to the same components whenever possible, even if these components are shown in different figures. Furthermore, in describing this disclosure, detailed descriptions of related known constructions or functions may be omitted if it is determined that such detailed descriptions may obscure the essential points of this disclosure.

[0049] Figure 1 This is a perspective view showing a display device according to an embodiment of this specification. Figure 2 It is shown schematically. Figure 1 A diagram showing the structure of the display panel.

[0050] In the following text, the X-axis indicates the direction parallel to the scan lines, the Y-axis indicates the direction parallel to the data lines, and the Z-axis indicates the height direction of the display device.

[0051] Although this document primarily describes the case where the display device 10 according to the embodiments described herein is implemented as an organic light-emitting display device, the display device 10 may also be an electroluminescent display device such as a quantum dot light-emitting diode (QLED) display device or a micro light-emitting display device.

[0052] like Figure 1 As shown, the display device 10 according to the embodiments of this specification may include a display panel 100 and a cover plate 200.

[0053] According to one embodiment of this specification, a display panel 100 displays an image and may include a substrate 110, a circuit device layer 122, a light-emitting device layer 124, and an encapsulation layer 126, such as Figure 2 As shown.

[0054] The substrate 110 may be a glass substrate disposed facing the cover substrate 200. In the following description, it will be assumed that the substrate 110 is a glass substrate. However, this disclosure is not limited thereto, and the substrate 110 may include glass, plastic, or a flexible polymer film. For example, the flexible polymer film may be made of any of the following: polyethylene terephthalate (PET), polycarbonate (PC), acrylonitrile-butadiene-styrene copolymer (ABS), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyethersulfone (PES), cyclic olefin copolymer (COC), triacetyl cellulose (TAC) film, polyvinyl alcohol (PVA) film, polyimide (PI) film, and polystyrene (PS), these are merely examples and are not necessarily limited thereto.

[0055] A circuit device layer 122 is disposed on one surface of the substrate 110 facing the cover substrate 200. In the circuit device layer 122, circuit devices including various signal lines, thin-film transistors, capacitors, etc., are provided for each pixel. Signal lines may include scan lines, data lines, drive power lines, common power lines, and reference lines, but this disclosure is not limited thereto. Thin-film transistors may include switching thin-film transistors, driving thin-film transistors, and sensing thin-film transistors.

[0056] The switching thin-film transistor is used to switch according to the scan signal provided to the scan line, and the data voltage provided from the data line is provided to the driving thin-film transistor.

[0057] The driving thin-film transistor is used to switch according to the data voltage provided from the switching thin-film transistor, generate data current according to the power supply provided from the driving power line, and provide the data current to the first electrode of each pixel.

[0058] Sensing thin-film transistors (TFTs) can be used to sense threshold voltage deviations that drive the TFTs, which can cause image quality degradation. The sensing TFT supplies current to the reference line in response to a sensing control signal provided from a gate line or a separate sensing control line.

[0059] A capacitor can be used to maintain the data voltage supplied to the driving thin-film transistor during a frame. Therefore, the capacitor is connected to each of the gate and source terminals of the driving thin-film transistor.

[0060] A light-emitting device layer 124 is disposed on a circuit device layer 122. The light-emitting device layer 124 includes a plurality of light-emitting devices. Each of the plurality of light-emitting devices includes a first electrode, a light-emitting layer, and a second electrode. The light-emitting layer may be an organic light-emitting layer comprising organic materials. In this case, the light-emitting layer may include a hole transport layer, an organic light-emitting layer, and an electron transport layer. For example, the light-emitting layer may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL), but this disclosure is not limited thereto. When a voltage is applied to the first electrode and the second electrode, holes and electrons move to the organic light-emitting layer through the hole transport layer and the electron transport layer, respectively, and recombine with each other, thereby emitting light.

[0061] The light-emitting device layer 124 can be a pixel array layer on which pixels are formed. Therefore, the area where the light-emitting device layer 124 is formed can be defined as the display area DA. The area surrounding the display area can be defined as the non-display area NDA. For example, the non-display area NDA can be set to be adjacent to the display area DA.

[0062] An encapsulation layer 126 is disposed on the light-emitting device layer 124. The encapsulation layer 126 is used to prevent or reduce the penetration of oxygen or moisture into the light-emitting device layer 124. The encapsulation layer 126 may include at least one inorganic film and at least one organic film. For example, the encapsulation layer 126 may have a structure in which at least one organic film is disposed between the inorganic films. The uppermost film in the encapsulation layer 126 may be an inorganic film. For example, the upper surface and side surfaces of the encapsulation layer 126 may be covered by an inorganic film.

[0063] The cover plate 200 can be formed of plastic or glass and is disposed on the display panel 100. Although in Figure 1 The display panel 100 is illustrated as a top-emitting type, but this specification is not limited to this. For example, the cover plate 200 may be positioned in the direction in which the display panel 100 emits light.

[0064] Therefore, when the display panel 100 is a top-emitting type, the cover plate 200 can be disposed above the display panel 100. When the display panel 100 is a bottom-emitting type, the cover plate 200 can be disposed below the display panel 100. In the following description, for ease of description, the case where the display panel 100 is a top-emitting type will be described.

[0065] Figure 3 It shows along Figure 1 An example of a cross-sectional view of line II′.

[0066] Although for the sake of ease of description, in Figure 3 The illustration shows a substrate 110 instead of a display panel 100, but does not exclude the circuit device layer 122, the light-emitting device layer 124, and the encapsulation layer 126 disposed on one surface of the substrate 110. In the following text, glass substrate 110 refers to a substrate 110 on which the circuit device layer 122, the light-emitting device layer 124, and the encapsulation layer 126 are disposed.

[0067] like Figure 3 As shown, an organic film 150 having multiple etched patterns 153a and 153b can be disposed in an etched region EA on another surface of the substrate 110. Here, the first etched pattern 153a and the second etched pattern 153b may each include one or more etched patterns. However, this specification is not limited thereto.

[0068] Furthermore, in the organic film 150, the first etch hole 155a and the second etch hole 155b can be formed between the etched surface 150a and the first etched pattern 153a, and between the first etched pattern 153a and the second etched pattern 153b, respectively.

[0069] Specifically, a first etched hole 155a may be formed between an etched surface 150a and a first etched pattern 153a on a portion of the organic film 150 located in the display panel region DPA, and a second etched hole 155b may be formed between the first etched pattern 153a and the second etched pattern 153b. The width of the first etched hole 155a may be the separation distance between the first etched pattern 153a and the etched surface 150a of the organic film 150, and the width of the second etched hole 155b may be the separation distance between the first etched pattern 153a and the second etched pattern 153b.

[0070] More specifically, the width can be configured to gradually increase from the first etched hole 155a toward the second etched hole 155b. For example, the second etched hole 155b can have a larger width than the first etched hole 155a. However, this specification is not limited to this.

[0071] For example, the ratio of the width of the first etched hole 155a to the width of the second etched hole 155b can be in the range of about 1:3 to 3:5. However, this specification is not limited to this. More specifically, the width of the first etched hole 155a can be in the range of about 1 μm to 3 μm (more specifically, 2 μm), and the width of the second etched hole 155b can be in the range of about 3 μm to 10 μm (e.g., about 5 μm to 8 μm or about 6 μm to 7 μm). However, this specification is not limited to this.

[0072] The width difference between the first etched hole 155a and the second etched hole 155b can be used to adjust the etch cross-sectional shape of the etched surface of the glass substrate 110 by changing the inflow amount, inflow rate, etc. of the etchant penetrating the substrate 110.

[0073] In addition, the polarizing film 120 and the adhesive layer 130 can be disposed between the substrate 110 and the cover substrate 200.

[0074] The polarizing film 120 is disposed on the substrate 110 so as to overlap with the substrate 110.

[0075] More specifically, the polarizing film 120 can be configured to overlap with the display area of ​​the substrate 110 to prevent or reduce the reduction in visibility due to reflection of external light. The polarizing film 120 can have a larger area than the substrate 110 and can have an end that protrudes beyond the substrate 110. For example, the substrate 110 can be formed in the area where the polarizing film 120 is formed. In a display device 10 according to one embodiment of the present disclosure, since the end of the polarizing film 120 can be located at the outermost possible boundary, it is advantageous in terms of ensuring viewing angle.

[0076] An adhesive layer 130 is disposed on the polarizing film 120 to overlap with the polarizing film 120. The adhesive layer 130 may be disposed between the polarizing film 120 and the cover substrate 200 to bond the polarizing film 120 and the cover substrate 200 to each other.

[0077] The adhesive layer 130 may have the same area as the polarizing film 120 and may have an end located at the same position as the polarizing film 120. Specifically, the adhesive layer 130 may be formed on the polarizing film 120 and then simultaneously cut with the polarizing film 120 using a laser. Therefore, the adhesive layer 130 may have an end located at the same position as the polarizing film 120.

[0078] Furthermore, since the adhesive layer 130 and the polarizing film 120 have the same area, the adhesive layer 130 can have a larger area than the substrate 110. Therefore, the adhesive layer 130 can have an end that protrudes beyond the substrate 110.

[0079] Since the polarizing film 120 and the adhesive layer 130 have ends that protrude beyond the end of the substrate 110, a step difference may exist between them and the substrate 110. In a display device 10 according to one embodiment of the present disclosure, a side coating film 170 may be provided to fill the step difference between the substrate 110 and the polarizing film 120.

[0080] Specifically, the side coating 170 can be disposed at the etched surface 113 of the substrate 110 to fill the step difference between the substrate 110 and the polarizing film 120. Here, the side coating 170 can contact the lower surface of the polarizing film 120 exposed due to the polarizing film 120 protruding from the end of the substrate 110. The side coating 170 and the polarizing film 120 can be cut simultaneously using a laser, so that the end of the side coating 170 can be formed at the same position as the end of the polarizing film 120.

[0081] Furthermore, the side coating 170 can be formed to cover the etched surface 113 of the substrate 110. In this way, the side coating 170 can improve the rigidity of the etched surface of the etched substrate 110.

[0082] According to various embodiments, based on the manufacturing process of the etching pattern using an organic film, the etched surface 113 of the substrate 110 can have, for example, Figures 6 to 10 Various inclined cross-sectional structures of different shapes are shown. For example, the etched surface 113 may include, for example, Figure 6 The conical side surface shown. Figure 7 As shown, the etched surface 113 may include a tapered side surface 113a, a vertical side surface 113b, and an inverted tapered side surface 113c; as Figure 8 As shown, the etched surface 313 may include a vertical side surface 313a and an inverted conical side surface 313b; or as shown Figure 9As shown, the etched surface 413 may include sharp, inverted conical sides. Additionally, as... Figure 10 As shown, the etched surface 513 may include a gently tapered side surface 513a, a vertical side surface 513b, and a very sharp inverted tapered side surface 513c. However, the shape of the etched surface of the substrate is not limited to this.

[0083] The display units of the display panel can be separated from each other by a separation process and each can be used as a display panel 100. Here, the mother plate of each of the multiple separated display units can correspond to the substrate 110.

[0084] In one embodiment, multiple display units can be separated from each other by a wet etching process using hydrofluoric acid. The substrate 110 of the display panel 100 may have a sloping surface in which the etched surface etched by the wet etching is sloping and may have sharp ends. In this case, the ends of the substrate 110 may be easily damaged when an impact is applied to the etched surface of the substrate 110.

[0085] In a display device 10 according to one embodiment of this specification, since the side coating 170 is formed to cover the inclined etched surface 113 of the substrate 110, the sharp ends of the substrate 110 can be covered by the side coating 170. Therefore, since the side coating 170 is used to mitigate impact when an impact is applied to the etched surface 113 of the substrate 110, the rigidity of the etched surface 113 of the substrate 110 can be improved.

[0086] Furthermore, the side coating 170 can be made of an organic material that absorbs light. In one embodiment, the side coating 170 can be made of an organic material with an optical density (OD) of about 1.0 or higher. However, this specification is not limited thereto.

[0087] In a display device 10 according to one embodiment of this specification, by providing a side coating 170 made of a light-absorbing material at the etched surface 113 of the substrate 110, light leakage in the display area of ​​the display panel 100 can be prevented or reduced. Therefore, in a display device 10 according to one embodiment of this disclosure, the visibility of the ends of the substrate 110 can also be prevented or avoided.

[0088] In a display device 10 according to one embodiment of this specification, since the side coating film 170 can fill the step difference between the substrate 110 and the polarizing film 120 at the etched surface 113 of the substrate 110, the inclined shape of the etched surface 113 of the substrate 110 can be formed in various ways.

[0089] As will be described below Figure 3 as well as Figures 7 to 10As shown, the width of the substrate 110 can be formed to gradually increase from the lower part to the upper part of the substrate 110 on which the organic film 150 is disposed, and the etched surface 113 of the substrate 110 can have an inverted conical shape. However, this specification is not limited to this.

[0090] Furthermore, in another embodiment, such as Figure 6 As shown, the substrate 110 may have a width that gradually decreases from the bottom to the top, and the etched surface 113 may have a tapered shape. In another embodiment, as will be described below... Figure 7 As shown, the etched surface 113 of the substrate 110 may have a conical upper side, an inverted conical lower side, and a central portion formed vertically between them, thereby being constructed into a rounded shape.

[0091] In this way, in a display device according to one embodiment of this specification, even when the shape of the etched surface 113 of the substrate 110 is formed in various ways, the etched surface 113 can be covered by the side coating film 170, thus increasing the design freedom of the shape of the etched surface 113 of the substrate 110.

[0092] In a display device 10 according to one embodiment of this specification, an organic film 150 may be disposed on another surface of a substrate 110. The organic film 150 may be configured to cover the entire other surface of the substrate 110 from below.

[0093] The organic film 150 may include a first covering portion (not shown) configured to cover a central region of the substrate 110 and a second covering portion (not shown) configured to cover an etched region EA located on the outer boundary portion of the central region of the substrate 110. The organic film 150 not only allows etching of the etched region EA of the substrate 110 but also protects the substrate 110. Furthermore, the organic film 150 may be formed of an organic material and is used to mitigate impacts, preventing or reducing the transmission of external impacts to the display panel 100.

[0094] In a display device according to one embodiment of this specification, an etch-resistant film 145 may be provided between the side coating 170 and the polarizing film 120. The etch-resistant film 145 can determine the etching depth when the substrate 110 is cut by a wet etching process.

[0095] In addition, it will refer to Figure 4 as well as Figures 5A to 5L The process of etching the glass substrate 110 by wet etching is described in more detail.

[0096] Figure 4 This is a flowchart illustrating a method for manufacturing a display device according to one embodiment of this specification, and Figures 5A to 5LThis is a cross-sectional view showing a method of manufacturing a display device according to one embodiment of this specification.

[0097] First, as a first operation (S401), a plurality of display units DC are formed on the substrate 110.

[0098] More specifically, refer to Figure 5A Display units DC1 and DC2 can be formed in multiple display panel regions DPA1 and DPA2 on the substrate 110a, respectively. Here, the substrate 110a can be a mother board.

[0099] First, a circuit device layer 122 can be formed on the substrate 110a. The circuit device layer 122 can provide circuit devices including various signal lines, thin-film transistors, capacitors, etc., for each pixel. Signal lines may include scan lines, data lines, drive power lines, common power lines, and reference lines, and thin-film transistors may include switching thin-film transistors, driving thin-film transistors, and sensing thin-film transistors, but this disclosure is not limited thereto.

[0100] Then, a light-emitting device layer 124 can be formed on the circuit device layer 122. The light-emitting device layer 124 includes a plurality of light-emitting devices. Each of the plurality of light-emitting devices may include a first electrode, a light-emitting layer, and a second electrode.

[0101] The light-emitting layer can be an organic light-emitting layer comprising organic materials. In this case, the light-emitting layer may include a hole transport layer, an organic light-emitting layer, and an electron transport layer.

[0102] When a voltage is applied to the first and second electrodes, holes and electrons move to the organic light-emitting layer through the hole transport layer and electron transport layer, respectively, and recombine with each other, thereby emitting light.

[0103] The light-emitting device layer 124 can be a pixel array layer on which pixels are formed. Therefore, the area where the light-emitting device layer 124 is formed can be defined as a display area. In addition, the area surrounding the display area can be defined as a non-display area.

[0104] Next, an encapsulation layer 126 can be formed on the light-emitting device layer 124. The encapsulation layer 126 is used to prevent or reduce the penetration of oxygen or moisture into the light-emitting device layer 124. The encapsulation layer 126 may include at least one inorganic film and at least one organic film.

[0105] Furthermore, an etching prevention film 145 may be formed along the etching region EA on one surface of the substrate 110a. Here, the etching region EA may be the region dividing multiple display panel regions DPA1 and DPA2. Therefore, the etching region EA may be disposed between the multiple display panel regions DPA1 and DPA2. The etching prevention film 145 may be formed of the same material as at least one of the multiple insulating films (not shown) disposed on the circuit device layer 122, the light-emitting device layer 124, and the encapsulation layer 126. For example, a planarization film may be provided at the circuit device layer 122 to planarize the step difference between the driving transistor and the light-emitting device caused by the driving transistor. The etching prevention film 145 may be formed simultaneously with the planarization film disposed on the circuit device layer 122 and made of the same material.

[0106] Next, as a second operation (S402), the other surface of substrate 110a is completely etched. More specifically, refer to... Figure 5B and Figure 5C The other surface of substrate 110a can be completely etched to form substrate 110 with a predetermined thickness. For example, substrate 110a can be etched so that substrate 110 has a thickness of about 0.2t, where t represents the original thickness of substrate 110a. However, this specification is not limited thereto.

[0107] Then, as a third operation (S403), with the substrate 110 flipped up and down, for example, with its other surface positioned facing upwards, an organic film 150 is formed on the other surface of the substrate 110 that has been completely etched.

[0108] More specifically, refer to Figure 5D An organic material can be applied to the entire other surface of the substrate 110 to form an organic film 150. The organic material forming the organic film 150 can be a colorless or transparent material, but this specification is not limited to this. The material forming the organic film 150 can also be a colored organic material. A screen printing machine can be used to apply the material forming the organic film to the other surface of the substrate 110, but this specification is not limited to this.

[0109] Next, as the fourth operation (S404), refer to Figure 5E The exposure mask 160 can be disposed on the upper side of the organic film 150 on the substrate 110 at predetermined intervals. Here, the exposure mask 160 may include a light-blocking portion LB and a light-transmitting portion LT.

[0110] The light-blocking portion LB of the exposure mask 160 can be positioned to overlap with multiple display panel regions DPA1 and DPA2, and the light-transmitting portion LT can be positioned to overlap with the etched region EA between the multiple display panel regions DPA1 and DPA2. Here, a portion of the light-transmitting portion LT can overlap with a portion of each of the multiple display panel regions DPA1 and DPA2. However, this specification is not limited thereto.

[0111] The exposure mask 160 may include a transparent substrate 160a, a first light-blocking pattern 161, and a second-first to second-third light-blocking patterns 163a, 163b, and 163c including a plurality of slits S1, S2, and S3.

[0112] The first light-blocking pattern 161 can be disposed on the light-blocking portion LB of the exposure mask 160, and the second-first light-blocking patterns 163a, 163b, and 163c can be disposed on the light-transmitting portion LT. Here, the first to third slits S1, S2, and S3 can be formed between the second-first light-blocking patterns 163a, 163b, and 163c. The first to third slits S1, S2, and S3 can adjust the intensity of the transmitted light source to adjust the linewidth of the second-first light-blocking patterns 163a, 163b, and 163c. Furthermore, each of the second-first light-blocking patterns 163a, 163b, and 163c may include one or more light-blocking patterns, but this specification is not limited to this.

[0113] The first slit S1 can be formed between the first light-blocking pattern 161 and the second-first light-blocking pattern 163a, and the second slit S2 can be formed between the second-first light-blocking pattern 163a and the second-second light-blocking pattern 163b. In addition, the third slit S3 can be formed between the second-second light-blocking pattern 163b and the second-third light-blocking pattern 163c.

[0114] Here, the width can be configured to gradually increase from the first slit S1 toward the third slit S3. More specifically, the second slit S2 can have a larger width than the first slit S1, and the third slit S3 can have a larger width than the second slit S2. However, this specification is not limited thereto.

[0115] For example, the ratio of the width of the first slit S1 to the width of the second slit S2 to the width of the third slit S3 can be defined as ranging from about 1:3:5 to 1:5:10. However, this specification is not limited to this. Specifically, the width of the first slit S1 can be in the range of about 1 μm to 3 μm, the width of the second slit S2 can be in the range of about 3 μm to 10 μm, and the width of the third slit S3 can be in the range of 5 μm to 50 μm. However, this specification is not limited to this.

[0116] Next, a photolithography process is performed to expose the organic film 150 by irradiating it with light via the exposure mask 160. Here, during the exposure process, while the light is blocked by the light-blocking portion LB provided at the exposure mask 160, the light is transmitted through the light-transmitting portion LT and can irradiate the organic film 150 with light.

[0117] Specifically, the organic film 150 can be irradiated with light through the first to third slits S1, S2, and S3 between the second-1st to second-3rd light-blocking patterns 163a, 163b, and 163c constituting the light-transmitting portion LT. Here, the area irradiated with light can be the etched area EA of the organic film 150.

[0118] Then, refer to Figure 5F By developing and removing the exposed portion of the organic film 150 corresponding to the etched area EA, first to third etched patterns 153a, 153b, and 153c can be formed in the etched area EA of the organic film 150. Here, the first to third etched patterns 153a, 153b, and 153c can be formed at positions overlapping with the second-first light-shielding patterns 163 to 163a, 163b, and 163c of the exposure mask 160. Each of the first to third etched patterns 153a, 153b, and 153c may comprise one or more etched patterns. However, this specification is not limited thereto.

[0119] Furthermore, the first etched hole to the third etched hole 155a, 155b and 155c can be formed between the first etched pattern to the third etched pattern 153a, 153b and 153c.

[0120] The first etched hole 155a can be formed on the etched surface 150a of the portion of the organic film 150 located in the display panel regions DPA1 and DPA2 (e.g., ...). Figure 3 The second etched hole 155b can be formed between the first etched pattern 153a and the second etched pattern 153b. Furthermore, a third etched hole 155c can be formed between the second etched pattern 153b and the third etched pattern 153c.

[0121] More specifically, the width can be configured to gradually increase from the first etched hole 155a toward the third etched hole 155c. More specifically, the second etched hole 155b can have a larger width than the first etched hole 155a, and the third etched hole 155c can have a larger width than the second etched hole 155b. However, this specification is not limited thereto.

[0122] For example, the ratio of the diameter of the first etched hole 155a to the diameter of the second etched hole 155b to the diameter of the third etched hole 155c can be defined as being in the range of about 1:3:5 to 1:5:10. However, this specification is not limited to this. Specifically, the diameter of the first etched hole 155a can be in the range of about 1 μm to 3 μm, the diameter of the second etched hole 155b can be in the range of about 3 μm to 10 μm, and the diameter of the third etched hole 155c can be in the range of 5 μm to 50 μm. However, this specification is not limited to this.

[0123] Next, as a fifth operation (S405), an organic film 150 having first to third etch patterns 153a, 153b, and 153c is used as an etching mask, and wet etching is performed on the portion of the substrate 110 located on the etch region EA using an etchant to form an etch trench EH. Here, the third etch pattern 153c can be removed during the formation of the etch trench EH. However, this specification is not limited thereto.

[0124] More specifically, refer to Figure 5F and Figure 5G By using a wet etching process with hydrofluoric acid, the substrate 110 is isotropically etched as the etchant (not shown) penetrates into the surface of the substrate 110 along the first etch pattern to the third etch pattern 153a, 153b and 153c between the first etch pattern and the third etch pattern 155a, 155b and 155c, thus forming an etch groove EH.

[0125] Here, since the degree to which the etchant penetrates into the substrate 110 is different along each of the first to the third etch holes 155a, 155b and 155c, the degree to which the etched surface of the substrate 110 is etched can also vary depending on the thickness of the substrate 110.

[0126] For example, refer to the description below. Figures 6 to 10 In some embodiments, the etched surface 113 of the substrate 110 located in the etched region EA may include, for example: Figure 6 The conical cross section shown may include, for example: Figure 7 The shown conical cross-section, vertical side surface, and inverted conical cross-section may include, for example: Figure 8 The vertical side and inverted conical cross-section shown may include, for example: Figure 9The steep inverted conical cross section shown may include, for example, Figure 10 The diagram shows a gentle, conical cross-section, a vertical side, and a steep, inverted conical cross-section. However, depending on the shape of the etching pattern of the organic film 150, the etched surface 113 of the substrate 110 can have various etched cross-sectional structures other than those described above.

[0127] In addition, refer to Figure 5F The shape of the etched surface 113 of the substrate 110 can vary according to the size (e.g., width or diameter) of the first etch hole to the third etch hole 155a, 155b and 155c between the first etch pattern to the third etch pattern 153a, 153b and 153c, or according to the inflow amount, inflow rate, etc. of the etchant introduced into the substrate 110 through the first etch hole to the third etch hole 155a, 155b and 155c. However, this specification is not limited thereto.

[0128] Furthermore, although the etched groove EH can be formed in a single wet etching process, this specification is not limited to this. In another embodiment, the etched groove EH can be formed along the thickness of the substrate 110 by multiple wet etching processes. For example, a portion of the thickness of the substrate 110 can be etched along the etching region EA by a first wet etching process. Then, the remaining thickness of the substrate 110 can be etched along the etching region EA by a second wet etching process.

[0129] Specifically, the first embodiment is illustrated with reference to... Figure 6 The etched surface 113 of the etched region EA of the substrate 110 may include a cross-sectional structure having a positive conical shape.

[0130] Furthermore, the second embodiment is illustrated by reference. Figure 7 The etched surface 113 may include a cross-sectional structure having a positive conical side 113a, a vertical side 113b, and an inverted conical side 113c.

[0131] Additionally, the third embodiment is illustrated by reference. Figure 8 The etched surface 313 of the etched region EA of the substrate 310 may include a cross-sectional structure having a vertical side surface 313a and a gently sloping inverted conical side surface 313b. Furthermore, reference is made to the fourth embodiment illustrated. Figure 9 The etched surface 413 of the etched region EA of the substrate 410 may include an inclined cross-sectional structure having a steep inverted conical shape. Furthermore, reference is made to the fifth embodiment illustrated. Figure 10 The etched surface 513 of the etched area EA of the substrate 510 may include a cross-sectional structure having a gentle conical side 513a, a vertical side 513b, and a steep inverted conical side 513c.

[0132] Then, as a sixth operation (S406), a side coating film 170 is formed in the etching tank EH of the substrate 110.

[0133] More specifically, refer to Figure 5H With the etching tank EH face of the substrate 110 facing upwards, an organic material can be applied to the etching tank EH to form a side coating film 170. The side coating film 170 can be made of a light-absorbing colored organic material. In one embodiment, the side coating film 170 can be made of an organic material with an optical density (OD) of about 1.0 or higher. The organic material can be applied to the etching tank EH using an ink dispenser. The material forming the side coating film 170 can be the same as the material forming the organic film 150. However, this specification is not limited to this. The side coating film 170 can be applied to the etching tank EH using any of a variety of known methods.

[0134] Next, as the seventh operation (S407), the side coating 170 and the organic film 150 are cut.

[0135] More specifically, refer to Figure 5I The side coating 170 disposed at the etching tank EH and the organic film 150 disposed on another surface of the substrate 110 can be cut along the first cutting line. Here, the first cutting line can be a line for cutting the side coating 170 and the organic film 150, and can be collinear with the etching area EA, allowing the cutting of the side coating 170 disposed at the etching tank EH.

[0136] Here, the organic film 150 cut along the first cutting line can be at least one of the first etched pattern 153a and the second etched pattern 153b located in the etched region EA.

[0137] Because the substrate 110 is etched by a wet etching process, the substrate 110 is not disposed along the first cutting line. Therefore, the etching prevention film 145, the side coating film 170, and the first etch pattern 153a and the second etch pattern 153b can be disposed along the first cutting line.

[0138] Since the etching prevention film 145, the side coating film 170, and the first etched pattern 153a and the second etched pattern 153b are all formed of organic materials, they can all be cut simultaneously using a laser. Therefore, there can be no step difference between the etching prevention film 145, the side coating film 170, and the first etched pattern 153a and the second etched pattern 153b, and their ends can be formed at the same position.

[0139] When one of the first etched pattern 153a and the second etched pattern 153b and the side coating 170 are cut, the multiple display panels, each having a plurality of display units DC1 and DC2 formed thereon, can be separated from each other.

[0140] Next, as the eighth operation (S408), a polarizing film 120 and an adhesive layer 130 are sequentially formed on display units DC1 and DC2. However, this specification is not limited thereto.

[0141] More specifically, refer to Figure 5J The polarizing film 120 and the adhesive layer 130 can constitute an adhesive film. Furthermore, the ends of the adhesive film can be formed to protrude beyond the side coating film 170.

[0142] Then, as a ninth operation (S409), the adhesive film including the polarizing film 120 and the adhesive layer 130 is cut.

[0143] More specifically, refer to Figure 5K The polarizing film 120 and the adhesive layer 130 can be cut along the second cutting line. Here, the second cutting line can be a line used to cut the polarizing film 120 and the adhesive layer 130, and can be collinear with the etched area, but this specification is not limited to this. The second cutting line can also be disposed inside the etched area. Even in this case, the second cutting line may not overlap with the substrate 110. Alternatively, the second cutting line can be disposed outside the etched area.

[0144] When the second cutting line is collinear with or located within the etching area, since the adhesive film including the polarizing film 120 and the adhesive layer 130, the etching prevention film 145, the side coating film 170, and the organic film 150 are all formed of organic materials, they can all be simultaneously cut using a laser. Figure 5K As shown. Therefore, no step difference may occur between the adhesive film including the polarizing film 120 and the adhesive layer 130, the etching prevention film 145, the side coating film 170 and the organic film 150, and their ends may be formed at the same position.

[0145] Furthermore, when the second cutting line is positioned outside the etching area, a laser can be used to simultaneously cut the adhesive film including the polarizing film 120 and the adhesive layer 130. No step difference may occur in the adhesive film including the polarizing film 120 and the adhesive layer 130, and their ends may be formed at the same location. However, the adhesive film including the polarizing film 120 and the adhesive layer 130 may be formed at its ends protruding beyond the first etch pattern 153a and the second etch pattern 153b of the etching prevention film 145, the side coating film 170, and the organic film 150.

[0146] Then, as the tenth operation (S410), a cover substrate 200 is formed on the adhesive layer 130.

[0147] More specifically, refer to Figure 5L It can remove the base layer of the adhesive film and can adhere the cover plate 200 to the adhesive layer 130.

[0148] In addition, it will refer to Figures 6 to 10 This specification describes an embodiment of the etched cross-sectional structure of the glass substrate of the display device according to this specification.

[0149] Figure 6 This is a cross-sectional view showing the substrate etching of a display panel according to the first embodiment of this specification. Figure 7 This is a cross-sectional view showing the substrate etching of a display panel according to the second embodiment of this specification. Figure 8 This is a cross-sectional view showing the substrate etching of a display panel according to the third embodiment of this specification. Figure 9 This is a cross-sectional view showing the substrate etching of the display panel according to the fourth embodiment of this specification, and Figure 10 This is a cross-sectional view showing the substrate etching of a display panel according to the fifth embodiment of this specification.

[0150] exist Figure 6 For ease of description, substrate 110 is shown instead of [other example]. Figure 2 The display panel 100, but does not exclude the circuit device layer (not shown) disposed on the substrate 110 (see...). Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0151] In the following text, substrate 110 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0152] Reference Figure 6 The display device according to the first embodiment of this specification may include an organic film 150 disposed on another surface of a glass substrate 110 and having a first etched pattern 153a and a second etched pattern 153b corresponding to the etched area EA.

[0153] Here, the first etched pattern 153a and the second etched pattern 153b may each include one or more etched patterns. However, this specification is not limited thereto.

[0154] Furthermore, the first etched hole 155a and the second etched hole 155b can be formed between the first etched pattern 153a and the second etched pattern 153b.

[0155] The first etched hole 155a may be formed between the first etched pattern 153a and the portion of the organic film 150 located in the display panel region DPA, and the second etched hole 155b may be formed between the first etched pattern 153a and the second etched pattern 153b.

[0156] More specifically, the second etched hole 155b may have a larger width than the first etched hole 155a. However, this specification is not limited to this.

[0157] For example, the ratio of the width of the first etched hole 155a to the width of the second etched hole 155b can be in the range of at least 1:3 to 1:5. However, this specification is not limited to this.

[0158] More specifically, the width of the first etched hole 155a can be in the range of about 1 μm to 3 μm, and the width of the second etched hole 155b can be in the range of about 3 μm to 15 μm. However, the width of the etched hole is not limited to these dimensions.

[0159] The width difference between the first etched hole 155a and the second etched hole 155b is used to adjust the etch cross-sectional shape of the etched surface of the substrate 110 by changing the inflow amount, inflow rate, etc. of the etchant penetrating into the substrate 110.

[0160] Therefore, since the first etch hole 155a and the second etch hole 155b are configured with different widths, the degree to which the etched surface 113 in the etch region EA of the substrate 110 is etched can be different in the upper and lower parts.

[0161] Specifically, the amount of etchant penetrating into the substrate 110 through the second etch hole 155b can be greater than the amount of etchant penetrating into the substrate 110 through the first etch hole 155a, which has a smaller width.

[0162] Therefore, due to the degree to which the etched surface 113 of the substrate 110 is etched, the isotropic etching rate gradually decreases from the top to the bottom, thus forming a cross section with a positive conical shape.

[0163] exist Figure 7 For ease of description, substrate 110 is shown instead of display panel 100, but a circuit device layer (not shown) disposed on one surface of substrate 110 is not excluded (see [link to documentation]). Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0164] In the following text, substrate 110 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0165] Reference Figure 7The display device according to the second embodiment of this specification includes an organic film 150 disposed on another surface of a substrate 110 and having a plurality of first etched patterns 153a disposed in an etched region EA.

[0166] Here, the first etched pattern 153a may each include one or more etched patterns. However, this specification is not limited thereto.

[0167] In addition, the first etched hole 155a can be formed between the first etched patterns 153a.

[0168] A first etched hole 155a may be formed between an etched surface on the portion of the organic film 150 located in the display panel region DPA and a first etched pattern 153a. More specifically, when multiple first etched patterns 153a are provided, the width of the etched hole may be formed from the first etched hole 155a toward the etched patterns 153b, 153c, and 153d located on the outer boundary side (see...). Figure 12B Etched holes 155b, 155c, and 155d between (see) Figure 12B (This gradually increases. However, this instruction manual is not limited to this.)

[0169] The first etched hole 155a and the etched holes 155b, 155c and 155d at its outer boundary (see...) Figure 12B This width difference is used to adjust the etch cross-sectional shape of the etched surface of the substrate 110 by changing the inflow amount, inflow rate, etc. of the etchant penetrating the substrate 110.

[0170] exist Figure 7 In the process, due to the first etched hole 155a of the organic film 150 and the etched holes 155b, 155c and 155d at its outer boundary (see... Figure 12B The amount of etchant introduced into the substrate 110 gradually increases, and etching isotropically performed on the etching surface in the etching region EA of the substrate 110. Therefore, the etching surface 113 of the substrate 110 in the etching region EA can have a rounded cross-section. For example, located in the first etching hole 155a and the second etching hole 155b (see... Figure 12B The etched surface 113 of the substrate 110 below may include a positively conical side surface 113a and an inverted conical side surface 113c, and includes a vertical side surface 113b disposed therebetween. More specifically, the upper portion of the etched surface 113 may have a positively conical side surface 113a, the central portion of the etched surface 113 may have a vertical side surface 113b, and the lower portion of the etched surface 113 may have an inverted conical side surface 113c.

[0171] This allows for the use of a first etched hole 155a and a second etched hole 155b with a small width (see...) Figure 12BA small amount of etchant is introduced, and it is used in conjunction with the first etched hole 155a and the second etched hole 155b (see...). Figure 12B Compared to the third etched hole 155c and the fourth etched hole 155d (see...), Figure 12B The amount of etchant introduced is larger, and in this way, the etching degree of the etched surface 113 of the substrate 110 can be changed.

[0172] Therefore, the etched surface 113 of the substrate 110 can be constructed with a rounded cross-section structure having a positive conical side 113a, a vertical side 113b, and an inverted conical side 113c by performing wet etching using an etchant. Here, since a rounded cross-section structure having a positive conical side 113a, a vertical side 113b, and an inverted conical side 113c is formed on the etched surface 113 of the substrate 110, some of the first to fourth etched patterns 153a, 153b, 153c, and 153d can be removed and no longer retained. For example, the second to fourth etched patterns 153b, 153c, and 153d can be removed by wet etching of portions of the substrate 110 below them. However, this specification is not limited to this.

[0173] In addition, Figure 8 For ease of description, glass substrate 310 is shown instead of [other material]. Figure 2 The display panel 100, but does not exclude the circuit device layer (not shown) disposed on the substrate 310 (see Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0174] In the following text, substrate 310 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0175] Reference Figure 8 The display device according to the third embodiment of this specification may include an organic film 350 disposed on another surface of a substrate 310 and having a plurality of first etched patterns 353a, second etched patterns 353b and third etched patterns 353c corresponding to the etched area EA.

[0176] Here, the first etched pattern 353a and the second etched pattern 353b may each include one or more etched patterns. However, this specification is not limited thereto.

[0177] Furthermore, the first etched hole 355a and the second etched hole 355b can be formed between the first etched pattern 353a and the second etched pattern 353b.

[0178] The first etched hole 355a may be formed between the portion of the organic film 350 located in the display panel area DPA and the first etched pattern 353a, and the second etched hole 355b may be formed between the first etched pattern 353a and the second etched pattern 353b.

[0179] More specifically, the first etched hole 355a and the second etched hole 355b may have similar widths. However, this specification is not limited to this.

[0180] For example, the ratio of the width of the first etched hole 355a to the width of the second etched hole 355b can be in the range of about 1:1 to 1:2. However, this specification is not limited to this.

[0181] More specifically, the width of the first etched hole 355a can be in the range of about 1 μm to 5 μm, and the width of the second etched hole 355b can be in the range of about 1 μm to 10 μm. However, the width of the etched holes is not limited to these dimensions.

[0182] The width difference between the first etched hole 355a and the second etched hole 355b is used to adjust the etch cross-sectional shape of the etched surface of the substrate 310 by changing the inflow amount, inflow rate, etc. of the etchant penetrating into the substrate 310.

[0183] Here, since the first etch hole 355a and the second etch hole 355b are constructed to have similar widths, the degree to which the etched surface 313 in the etch region EA of the substrate 310 is etched can be only slightly different on its upper and lower parts.

[0184] Specifically, since the amount of etchant penetrating into the substrate 310 through the first etch hole 355a and the second etch hole 355b with small width is small and its speed is slow, a vertical side surface 313a can be formed on the upper part of the etched surface 313 of the substrate 310, and a slightly inverted conical side surface 313b can be formed on the lower part of the etched surface 313 of the substrate 310.

[0185] Therefore, since the etchant is introduced in similar amounts through the first etch hole 355a and the second etch hole 355b, the etched surface 313 of the substrate 310 can be etched by wet etching using the etchant introduced through the first etch hole 355a and the second etch hole 355b, thus forming a cross section having a vertical side surface 313a and an inverted conical side surface 313b.

[0186] exist Figure 9 For ease of description, substrate 410 is shown instead of [other substrate]. Figure 2The display panel 100, but does not exclude the circuit device layer (not shown) disposed on the substrate 410 (see Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0187] In the following text, substrate 410 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0188] In addition, refer to Figure 9 The display device according to the fourth embodiment of this specification includes an organic film 450, which is disposed on another surface of a substrate 410 and has a first etched pattern 453a and a second etched pattern 453b located in an etched region EA (see [link]). Figure 14B ).

[0189] Here, the first etched pattern 453a and the second etched pattern 453b may each include one or more etched patterns. However, this specification is not limited thereto.

[0190] In addition, a first etch hole 455a can be formed between the organic film 450 and the first etch pattern 453a.

[0191] The first etched hole 455a can be formed between the portion of the organic film 450 located in the display panel area DPA and the first etched pattern 453a.

[0192] More specifically, the second etched hole 455b (see Figure 14B The width of the second etched hole 455b can be made larger than the width of the first etched hole 455a. For example, the width of the first etched hole 455a is greater than the width of the second etched hole 455b (see [reference]). Figure 14B The ratio can be approximately 1:5 or greater. However, this specification is not limited to this.

[0193] Furthermore, the width of the first etched hole 455a can be in the range of approximately 1 μm to 5 μm, and the width of the second etched hole 455b (see...) Figure 14B The width of the etched hole can range from approximately 5 μm to 30 μm. However, the width of the etched hole is not limited to this.

[0194] First etched hole 455a and second etched hole 455b (see...) Figure 14B This width difference between the two is used to adjust the etch cross-sectional shape of the etched surface of the substrate 410 by changing the inflow amount, inflow rate, etc. of the etchant penetrating the substrate 410.

[0195] exist Figure 9In this process, the amount of etchant introduced into the substrate 410 through the second etching hole 455b of the organic film 450 is greater than the amount of etchant introduced through the first etching hole 455a.

[0196] As a result, due to the second etched hole 455b (see...) Figure 14B The etching of the etched surface in the etch region EA of the substrate 410 is performed isotropically faster than through the first etch hole 455a, so the etched surface 413 of the substrate 410 in the etch region EA may include a cross section with a steep inverted conical shape.

[0197] In addition, Figure 10 For ease of description, substrate 510 is shown instead of [other substrate]. Figure 2 The display panel 100, but does not exclude the circuit device layer (not shown) disposed on the substrate 510 (see Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0198] In the following text, substrate 510 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0199] Reference Figure 10 The display device according to the fifth embodiment of this specification includes an organic film 550 disposed on another surface of a substrate 510 and having a first etched pattern to a third etched pattern 553a, 553b and 553c located in an etched region EA.

[0200] Here, the first to third etched patterns 553a, 553b and 553c may each include one or more etched patterns. However, this specification is not limited thereto.

[0201] Furthermore, the first etched hole to the third etched hole 555a, 555b and 555c can be formed between the first etched pattern to the third etched pattern 553a, 553b and 553c.

[0202] More specifically, a first etched hole 555a may be formed between the portion of the organic film 550 located in the display panel region DPA and the first etched pattern 553a, and a second etched hole 555b may be formed between the first etched pattern 553a and the second etched pattern 553b. Furthermore, a third etched hole 555c may be formed between the second etched pattern 553b and the third etched pattern 553c.

[0203] More specifically, the first to third etched holes 555a, 555b and 555c can be formed with widths of similar dimensions, and the fourth etched hole 555d (see...) Figure 15B The width of the ) can be made to be greater than the width of the first to third etched holes 555a, 555b and 555c.

[0204] For example, the widths of the first to third etched holes 555a, 555b, and 555c are the same as those of the fourth etched hole 555d (see [reference]). Figure 15B The ratio of the width of the part can be approximately 1:3 or greater. However, this specification is not limited to this.

[0205] Furthermore, the widths of the first to third etched holes 555a, 555b, and 555c can range from approximately 1 μm to 5 μm, and the width of the fourth etched hole 555d (see...) Figure 15B The width of the etched hole can range from approximately 3 μm to 20 μm. However, the width of the etched hole is not limited to this.

[0206] The width difference between the first to third etched holes 555a, 555b and 555c and the fourth etched hole 555d is used to adjust the etch cross-sectional shape of the etched surface of the substrate 510 by changing the inflow amount, inflow rate and other parameters of the etchant penetrating the substrate 510.

[0207] exist Figure 10 In this process, the amount of etchant introduced into the substrate 510 through the fourth etch hole 555d of the organic film 550 is greater than the amount of etchant introduced through the first to third etch holes 555a, 555b, and 555c. As a result, due to the amount of etchant introduced through the fourth etch hole 555d (see...) Figure 15B The etching of the etched surface in the etch region EA of the substrate 510 is performed more isotropically than through the first to third etch holes 555a, 555b, and 555c. Therefore, the etched surface 513 of the substrate 510 in the etch region EA can have a cross-section including a positive conical side 513a, a vertical side 513b, and an inverted conical side 513c. Furthermore, the inverted conical side can be inclined at a greater angle than the positive conical side.

[0208] Figures 11A to 11C This is a cross-sectional view showing the substrate etching process of a display panel according to the first embodiment of this specification.

[0209] exist Figures 11A to 11C For ease of description, substrate 110 is shown instead of [other example]. Figure 2 The display panel 100, but does not exclude the circuit device layer (not shown) disposed on one surface of the substrate 110 (see Figure 2 122), Light-emitting device layer (not shown) (see 122)Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0210] In the following text, substrate 110 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0211] Reference Figure 11A After the other surface of the substrate 110 is completely etched, an organic film 150 is formed on the other surface of the substrate 110 that is positioned facing upwards while the substrate 110 is flipped upside down.

[0212] Specifically, an organic film 150 is formed by applying an organic material to the entire other surface of the substrate 110. Here, the organic material forming the organic film 150 can be a colorless or transparent material, but this specification is not limited to this. Alternatively, the material forming the organic film can also be a colored organic material. A screen printing machine can be used to apply the material forming the organic film to the other surface of the substrate 110, but this specification is not limited to this.

[0213] Next, the exposure mask 660 is positioned on the upper side of the organic film 150 at a predetermined distance.

[0214] Here, the exposure mask 660 may include a light-blocking portion LB and a light-transmitting portion LT. The light-blocking portion LB of the exposure mask 660 may be positioned to overlap with multiple display panel regions DPA, and the light-transmitting portion LT may be positioned to overlap with an etched region EA between the multiple display panel regions DPA. Here, a portion of the etched region EA may overlap with a portion of each of the multiple display panel regions DPA.

[0215] The exposure mask 660 may include a transparent substrate 660a, a first light-blocking pattern 661, and a second-first to second-third light-blocking patterns 663a, 663b and 663c including a plurality of slits S1, S2 and S3.

[0216] Furthermore, the first light-blocking pattern 661 can be disposed at the light-blocking portion LB of the exposure mask 660, and the second-first to third light-blocking patterns 663a, 663b, and 663c can be disposed at the light-transmitting portion LT. Here, the first to third slits S1, S2, and S3 can be formed between the second-first to third light-blocking patterns 663a, 663b, and 663c. Here, the first to third slits S1, S2, and S3 can adjust the intensity of the transmitted light source to adjust the linewidth of the second-first, second-second, and third light-blocking patterns 663a, 663b, and 663c. In addition, the second-first to third light-blocking patterns 663a, 663b, and 663c can each include one or more light-blocking patterns, but this specification is not limited thereto.

[0217] The first slit S1 can be formed between the first light-blocking pattern 661 and the second-first light-blocking pattern 663a, and the second slit S2 can be formed between the second-first light-blocking pattern 663a and the second-second light-blocking pattern 663b. In addition, the third slit S3 can be formed between the second-second light-blocking pattern 663b and the second-third light-blocking pattern 663c.

[0218] The first to third slits S1, S2, and S3 can be formed with different widths. More specifically, the second slit S2 can have a larger width than the first slit S1, and the third slit S3 can have a larger width than the second slit S2. However, this specification is not limited thereto.

[0219] For example, the widths of the first slit S1, the second slit S2, and the third slit S3 can be similar to each other and can be limited to a range of approximately 1:3:7 to 1:5:10. However, this specification is not limited to this.

[0220] More specifically, the width of the first slit S1 can be in the range of about 1 μm to 3 μm, the width of the second slit S2 can be in the range of about 3 μm to 15 μm, and the width of the third slit S3 can be in the range of 7 μm to 50 μm. However, the width of the slits is not limited to these ranges.

[0221] Next, using photolithography through the exposure mask 660, an exposure process is performed to irradiate the organic film 150 with light. Here, during the exposure process, when light is blocked by the first light-blocking pattern 661 set on the exposure mask 660, light is transmitted through the first slit to the third slit S1, S2 and S3 of the light-transmitting portion LT, and the organic film 150 can be irradiated with light.

[0222] Specifically, the organic film 150 can be illuminated with light through the first to third slits S1, S2, and S3, which constitute the light-transmitting portion LT and are located between the second-1st to the second-3rd light-blocking patterns 663a, 663b, and 663c. Here, the area illuminated with light can be the etched area EA of the organic film 150.

[0223] Then, refer to Figure 11B By developing and removing the exposed portion of the organic film 150 located in the etching region EA, first etched patterns to third etched patterns 153a, 153b, and 153c can be formed in the etching region EA of the organic film 150 overlapping with the first to third slits S1, S2, and S3 of the exposure mask 660. The first to third etched patterns 153a, 153b, and 153c may each include one or more etched patterns. However, this specification is not limited thereto.

[0224] Furthermore, the first etched hole to the third etched hole 155a, 155b and 155c can be formed between the first etched pattern to the third etched pattern 153a, 153b and 153c.

[0225] A first etched hole 155a may be formed between the portion of the organic film 150 located in the display panel region DPA and the first etched pattern 153a, and a second etched hole 155b may be formed between the first etched pattern 153a and the second etched pattern 153b. Furthermore, a third etched hole 155c may be formed between the second etched pattern 153b and the third etched pattern 153c.

[0226] More specifically, the second etched hole 155b may have a wider width than the first etched hole 155a, and the third etched hole 155c may have a wider width than the second etched hole 155b. However, this specification is not limited to this.

[0227] For example, the widths of the first etched hole 155a, the second etched hole 155b, and the third etched hole 155c can be similar to each other and can be limited to a range of at least 1:3:7 to 1:5:10. However, this specification is not limited to this.

[0228] More specifically, the width of the first etched hole 155a can be in the range of about 1 μm to 3 μm, the width of the second etched hole 155b can be in the range of about 3 μm to 15 μm, and the width of the third etched hole 155c can be in the range of 7 μm to 50 μm. However, the width of the etched hole is not limited to these dimensions.

[0229] Next, refer to Figure 11CBy performing a wet etching process, etchant is introduced into the first etch hole to the third etch hole 155a, 155b and 155c between the first etch pattern to the third etch pattern 153a, 153b and 153c to etch the substrate 110 located in the etch region EA.

[0230] Here, the width differences between the first etched holes to the third etched holes 155a, 155b, and 155c are used to adjust the etch cross-sectional shape of the etched surface of the substrate 110 by changing the inflow amount and inflow rate of the etchant penetrating into the substrate 110. Furthermore, finally, due to the etching of the substrate 110, only the first etched pattern 153a and the second etched pattern 153b can be retained. This specification is not limited thereto.

[0231] In this way, by using a wet etching process with an etchant, a cross-sectional structure with a positive conical shape can be formed on the etched surface 113 of the substrate 110 in the etched area EA.

[0232] Therefore, since the first to third etch holes 155a, 155b and 155c are constructed with widths of different dimensions, the degree to which the etched surface 113 in the etch region EA of the substrate 110 is etched can be different in its upper and lower parts.

[0233] Specifically, the amount of etchant penetrating into the substrate 110 through the second etch hole 155b can be greater than the amount of etchant penetrating into the substrate 110 through the first etch hole 155a with a smaller width, and the amount of etchant introduced through the third etch hole 155c can be greater than the amount of etchant introduced through the second etch hole 155b.

[0234] Therefore, due to the degree to which the etched surface 113 of the substrate 110 is etched, the isotropic etching rate gradually decreases from the top to the bottom, thus forming a cross section with a positive conical shape.

[0235] Furthermore, manufacturing methods for different embodiments of the etched cross-sectional structure of the substrate of the display device according to this specification will be described.

[0236] Figures 12A to 12C This is a cross-sectional view showing the etching process of the substrate of the display panel according to the second embodiment of this specification.

[0237] exist Figures 12A to 12C For ease of description, substrate 110 is shown instead of display panel 100, but a circuit device layer (not shown) disposed on substrate 110 is not excluded (see [link to documentation]). Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0238] In the following text, substrate 110 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0239] Reference Figure 12A After completely etching the other surface of the substrate 110, an organic film 150 is formed on the other surface of the substrate 110 with the substrate 110 flipped upside down so that the other surface faces upward.

[0240] Specifically, an organic film 150 is formed by applying an organic material to the entire other surface of the substrate 110. Here, the organic material forming the organic film 150 can be a colorless or transparent material, but this specification is not limited to this. Alternatively, the material forming the organic film can also be a colored organic material. A screen printing machine can be used to apply the material forming the organic film to the other surface of the substrate 110, but this specification is not limited to this.

[0241] Next, the exposure mask 160 is positioned on the upper side of the organic film 150 at a predetermined distance.

[0242] Here, the exposure mask 160 may include a light-blocking portion LB and a light-transmitting portion LT. The light-blocking portion LB of the exposure mask 160 may be positioned to overlap with a plurality of display panel regions DPA, and the light-transmitting portion LT may be positioned to overlap with an etched region EA between the plurality of display panel regions DPA. Here, a portion of the etched region EA may overlap with a portion of each of the plurality of display panel regions DPA. However, this specification is not limited to this.

[0243] The exposure mask 160 may include a transparent substrate 160a, a first light-blocking pattern 161, and second-1st to second-4th light-blocking patterns 163a, 163b, 163c, and 163d, which include a plurality of slits S1, S2, S3, and S4.

[0244] Furthermore, the first light-blocking pattern 161 can be disposed on the light-blocking portion LB of the exposure mask 160, and the second-first to second-fourth light-blocking patterns 163a, 163b, 163c, and 163d can be disposed on the light-transmitting portion LT. Here, the first to fourth slits S1, S2, S3, and S4 can be formed between the second-first to second-fourth light-blocking patterns 163a, 163b, 163c, and 163d. Here, the first to fourth slits S1, S2, S3, and S4 can adjust the intensity of the transmitted light source to adjust the linewidth of the second-first light-blocking pattern 163a, the second-second light-blocking pattern 163b, the second-third light-blocking pattern 163c, and the second-fourth light-blocking pattern 163d. In addition, light-blocking patterns 2-1 to 2-4, 163a, 163b, 163c and 163d, may each include one or more light-blocking patterns, but this specification is not limited thereto.

[0245] A first slit S1 can be formed between a first light-blocking pattern 161 and a second-first light-blocking pattern 163a, and a second slit S2 can be formed between a second-first light-blocking pattern 163a and a second-second light-blocking pattern 163b. Furthermore, a third slit S3 can be formed between a second-second light-blocking pattern 163b and a second-third light-blocking pattern 163c. Additionally, a fourth slit S4 can be formed between a second-third light-blocking pattern 163c and a second-fourth light-blocking pattern 163d.

[0246] The slit width can be configured to gradually increase from the first slit S1 toward the fourth slit S4. More specifically, the second slit S2 can have a larger width than the first slit S1, the third slit S3 can have a larger width than the second slit S2, and the fourth slit S4 can have a larger width than the third slit S3. However, this specification is not limited thereto.

[0247] For example, the ratio of the width of the first slit S1 to the width of the second slit S2, the width of the third slit S3, and the width of the fourth slit S4 can be defined as being in the range of approximately 1:3:5:7 to 1:5:10:15. However, this specification is not limited to this. Specifically, the width of the first slit S1 can be in the range of approximately 1 μm to 3 μm, the width of the second slit S2 can be in the range of approximately 3 μm to 5 μm, the width of the third slit S3 can be in the range of 5 μm to 10 μm, and the width of the fourth slit S4 can be in the range of 7 μm to 20 μm. However, this specification is not limited to this.

[0248] Next, using photolithography through the exposure mask 160, an exposure process is performed to irradiate the organic film 150 with light. Here, during the exposure process, while the light is blocked by the first light-blocking pattern 161 set on the exposure mask 160, a portion of the light is transmitted through the first to fourth slits S1, S2, S3 and S4 of the light-transmitting portion LT, and the organic film 150 can be irradiated with light.

[0249] Specifically, the organic film 150 can be illuminated by light through the first to fourth slits S1, S2, S3, and S4 between the second to fourth light-blocking patterns 163a, 163b, 163c, and 163d constituting the light-transmitting portion LT. Here, the area illuminated by light can be the etched area EA of the organic film 150.

[0250] Then, refer to Figure 12B By developing and removing the exposed portion of the organic film 150 located in the etching region EA, first to fourth etched patterns 153a, 153b, 153c, and 153d can be formed in the etching region EA of the organic film 150. Here, the first to fourth etched patterns 153a, 153b, 153c, and 153d can be formed at locations overlapping with the first to fourth slits S1, S2, S3, and S4 of the exposure mask 160. Each of the first to fourth etched patterns 153a, 153b, 153c, and 153d may comprise one or more etched patterns. However, this specification is not limited thereto.

[0251] In addition, first etched holes to fourth etched holes 155a, 155b, 155c and 155d can be formed between the first etched pattern to the fourth etched pattern 153a, 153b, 153c and 153d.

[0252] A first etched hole 155a may be formed between the etched surface of the organic film 150 located in the display panel region DPA and the first etched pattern 153a, and a second etched hole 155b may be formed between the first etched pattern 153a and the second etched pattern 153b. Furthermore, a third etched hole 155c may be formed between the second etched pattern 153b and the third etched pattern 153c. Additionally, a fourth etched hole 155d may be formed between the third etched pattern 153c and the fourth etched pattern 153d.

[0253] More specifically, the width can be configured to gradually increase from the first etched hole 155a toward the fourth etched hole 155d. For example, the second etched hole 155b can have a larger width than the first etched hole 155a, and the third etched hole 155c can have a larger width than the second etched hole 155b. Furthermore, the fourth etched hole 155d can have a larger width than the third etched hole 155c. However, this specification is not limited to this.

[0254] For example, the ratio of the width of the first etched hole 155a to the width of the second etched hole 155b, the width of the third etched hole 155c, and the width of the fourth etched hole 155d can be limited to a range of about 1:3:5:7 to 1:5:7:15. However, this specification is not limited to this. More specifically, the width of the first etched hole 155a can be in the range of about 1 μm to 3 μm, the width of the second etched hole 155b can be in the range of about 3 μm to 5 μm, the width of the third etched hole 155c can be in the range of about 5 μm to 10 μm, and the width of the fourth etched hole 155d can be in the range of about 7 μm to 20 μm. However, the width of the etched holes is not limited to this.

[0255] Next, refer to Figure 12C An etchant is introduced into the first etch holes to the fourth etch holes 155a, 155b, 155c, and 155d between the first etch patterns to the fourth etch patterns 153a, 153b, 153c, and 153d of the organic film 150, allowing the etchant to penetrate into the substrate 110 beneath the organic film 150, and isotropic etching is performed. Here, because the substrate 110 is etched, only the first etch pattern 153a can ultimately be retained. However, this specification is not limited to this.

[0256] The width differences of the first to fourth etched holes 155a, 155b, 155c and 155d are used to adjust the etch cross-sectional shape of the etched surface of the substrate 110 by changing the inflow amount, inflow rate and other factors of the etchant penetrating the substrate 110.

[0257] Furthermore, after performing isotropic etching, the etched surface 113 of the glass substrate 110 located in the etched region EA may ultimately include a positive conical side surface 113a, a vertical side surface 113b, and an inverted conical side surface 113c. Here, the positive conical side surface 113a, the vertical side surface 113b, and the inverted conical side surface 113c can form a rounded etched surface 113.

[0258] The conical side surface 113a and the inverted conical side surface 113c can be formed at positions overlapping with the first slit S1 and the second slit S2 of the organic film 150, and the vertical side surface 113b can be formed extending between the conical side surface 113a and the inverted conical side surface 113c. However, this specification is not limited to this. Additionally, the third etched pattern 153c and the fourth etched pattern 153d of the organic film 150 can be removed during the etching process. However, this specification is not limited to this.

[0259] Specifically, after the etching process, the third etched pattern 153c of the organic film 150, or the third etched pattern 153c and the fourth etched patterns 153c and 153d of the organic film 150, can be removed. However, this specification is not limited to this. According to another embodiment, one or more of the first to fourth etched patterns 153a, 153b, 153c and 153d can be left after the etching process.

[0260] More specifically, as the amount of etchant introduced into the substrate 110 gradually increases through the first to fourth etch holes 155a, 155b, 155c, and 155d of the organic film 150, and the etching of the etched surface in the etch region EA of the substrate 110 is performed isotropically, the etched surface 113 of the substrate 110 in the etch region EA has a rounded cross-section. For example, the etched surface 113 of the substrate 110 located below the first etch hole 155a and the second etch hole 155b may include a positive conical side surface 113a, a vertical side surface 113b, and an inverted conical side surface 113c. For example, the upper part of the etched surface 113 may have a positive conical side surface 113a, the middle part of the etched surface 113 may have a vertical side surface 113b, and the lower part of the etched surface 113 may have an inverted conical side surface 113c.

[0261] As a result, the etching rate of the etched surface 113 of the substrate 110 can be varied because the amount of etchant introduced from the first etched hole to the fourth etched hole 155a, 155b, 155c and 155d with the width gradually increases.

[0262] Therefore, the etched surface 113 of the substrate 110 can have a rounded cross section due to wet etching performed using an etchant, the rounded cross section having a positive conical side 113a, a vertical side 113b and an inverted conical side 113c.

[0263] Figures 13A to 13C This is a cross-sectional view showing the etching process of the substrate of the display panel according to the third embodiment of this specification.

[0264] exist Figures 13A to 13CFor ease of description, substrate 310 is shown instead of display panel 100, but a circuit device layer (not shown) disposed on one surface of substrate 310 is not excluded (see [link to documentation]). Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0265] In the following text, substrate 310 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0266] Reference Figure 13A After completely etching the other surface of the substrate 310, an organic film 350 is formed on the other surface of the substrate 310 with the substrate 310 flipped upside down so that the other surface is on top.

[0267] Specifically, an organic film 350 is formed by applying an organic material to the entire other surface of the substrate 310. Here, the organic material forming the organic film 350 can be a colorless or transparent material, but this specification is not limited to this. Alternatively, the material forming the organic film can also be a colored organic material. A screen printing machine can be used to apply the material forming the organic film to the other surface of the substrate 310, but this specification is not limited to this.

[0268] Next, the exposure mask 360 is positioned on the upper side of the organic film 350 at a predetermined distance.

[0269] Here, the exposure mask 360 may include a light-blocking portion LB and a light-transmitting portion LT. The light-blocking portion LB of the exposure mask 360 may be positioned to overlap with multiple display panel regions DPA, and the light-transmitting portion LT may be positioned to overlap with an etched region EA between the multiple display panel regions DPA. Here, a portion of the etched region EA may overlap with a portion of each of the multiple display panel regions DPA.

[0270] The exposure mask 360 may include a transparent substrate 360a, a first light-blocking pattern 361, and a second-first to second-third light-blocking patterns 363a, 363b, and 363c including a plurality of slits S1, S2, and S3.

[0271] The first light-blocking pattern 361 can be disposed on the light-blocking portion LB of the exposure mask 360, and the second-first to third light-blocking patterns 363a, 363b, and 363c can be disposed on the light-transmitting portion LT. Here, the first to third slits S1, S2, and S3 can be formed between the second-first to third light-blocking patterns 363a, 363b, and 363c. Here, the first to third slits S1, S2, and S3 can adjust the intensity of the transmitted light source to adjust the linewidth of the second-first light-blocking pattern 363a, the second-second light-blocking pattern 363b, and the second-third light-blocking pattern 363c. In addition, the second-first to third light-blocking patterns 363a, 363b, and 363c can each include one or more light-blocking patterns, but this specification is not limited thereto.

[0272] The first slit S1 can be formed between the first light-blocking pattern 361 and the second-first light-blocking pattern 363a, and the second slit S2 can be formed between the second-first light-blocking pattern 363a and the second-second light-blocking pattern 363b. In addition, the third slit S3 can be formed between the second-second light-blocking pattern 363b and the second-third light-blocking pattern 363c.

[0273] The widths of the first to third slits S1, S2 and S3 may be the same or slightly different from each other. However, this specification is not limited thereto.

[0274] For example, the ratio of the width of the first slit S1 to the width of the second slit S2 to the width of the third slit S3 can be limited to a range of approximately 1:1:1 to 1:1.5:2. However, this specification is not limited to this. Specifically, the width of the first slit S1 can be in the range of approximately 1 μm to 5 μm, the width of the second slit S2 can be in the range of approximately 1 μm to 7 μm, and the width of the third slit S3 can be in the range of 1 μm to 10 μm. However, this specification is not limited to this.

[0275] Next, using photolithography through the exposure mask 360, an exposure process is performed to irradiate the organic film 350 with light. Here, during the exposure process, while the light is blocked by the first light-blocking pattern 361 set on the exposure mask 360, the light is transmitted through the first to third slits S1, S2 and S3 of the light-transmitting portion LT, and the organic film 350 can be irradiated with light.

[0276] Specifically, the organic film 350 can be illuminated by light through the first to third slits S1, S2, and S3 between the second-1st to the second-3rd light-blocking patterns 363a, 363b, and 363c that constitute the light-transmitting portion LT. Here, the area illuminated by light can be the etched area EA of the organic film 350.

[0277] Then, refer toFigure 13B By developing and removing the exposed portion of the organic film 350 located in the etching region EA, first etched patterns to third etched patterns 353a, 353b, and 353c can be formed at the locations where they overlap with the first to third slits S1, S2, and S3 of the exposure mask 360 in the etching region EA of the organic film 350. Each of the first to third etched patterns 353a, 353b, and 353c may comprise one or more etched patterns. However, this specification is not limited thereto.

[0278] In addition, first etched holes to third etched holes 355a, 355b and 355c can be formed between the first etched pattern and the third etched patterns 353a, 353b and 353c.

[0279] A first etched hole 355a may be formed between the etched surface of the organic film 350 located in the display panel region DPA and the first etched pattern 353a, and a second etched hole 355b may be formed between the first etched pattern 353a and the second etched pattern 353b. Additionally, a third etched hole 355c may be formed between the second etched pattern 353b and the third etched pattern 353c.

[0280] Here, the first to third etched patterns 353a, 353b and 353c may each include one or more etched patterns. However, this specification is not limited thereto.

[0281] In addition, first etched holes to third etched holes 355a, 355b and 355c can be formed between the first etched pattern and the third etched patterns 353a, 353b and 353c.

[0282] Specifically, a first etched hole 355a may be formed between the portion of the organic film 350 located in the display panel region DPA and the first etched pattern 353a, and a second etched hole 355b may be formed between the first etched pattern 353a and the second etched pattern 353b. Furthermore, a third etched hole 355c may be formed between the second etched pattern 353b and the third etched pattern 353c.

[0283] More specifically, the first etched hole 355a, the second etched hole 355b, and the third etched hole 355c may have similar widths. However, this specification is not limited to this.

[0284] For example, the ratio of the width of the first etched hole 355a to the width of the second etched hole 355b to the width of the third etched hole 355c can be in the range of approximately 1:1:1 to 1:1.5:2. However, this specification is not limited to this.

[0285] More specifically, the width of the first etched hole 355a can be in the range of about 1 μm to 5 μm, the width of the second etched hole 355b can be in the range of about 1 μm to 7 μm, and the width of the third etched hole 355c can be in the range of 1 μm to 10 μm. However, the width of the etched hole is not limited to these dimensions.

[0286] The width difference between the first etched hole and the third etched holes 355a, 355b and 355c is used to adjust the etch cross-sectional shape of the etched surface of the glass substrate 310 by changing the inflow amount, inflow rate and other factors of the etchant penetrating into the glass substrate 310.

[0287] Here, since the first to third etch holes 355a, 355b and 355c are constructed to have similar widths, the degree to which the etched surface 313 in the etched region EA of the substrate 310 is etched may differ only slightly between the upper and lower parts.

[0288] Next, refer to Figure 13C The etchant is introduced into the first etch hole to the third etch hole 355a, 355b and 355c located between the first etch pattern to the third etch pattern 353a, 353b and 353c of the organic film 350, so that the etchant penetrates into the substrate 310 below the organic film 350 and performs isotropic etching.

[0289] In this manner, through the etching process, because the amount of etchant penetrating into the substrate 310 through the narrow-width first to third etch holes 355a, 355b, and 355c is small and the etching speed is slow, a vertical side surface 313a can be formed on the upper part of the etched surface 313 of the substrate 310, and an inverted conical side surface 313b can be formed on the lower part of the etched surface 313 of the substrate 310. Here, due to the etching of the substrate 310, only the first etched pattern 353a and the second etched pattern 353b can remain. This specification is not limited thereto.

[0290] Therefore, since the etchant is introduced into the first etch hole to the third etch hole 355a, 355b and 355c in similar amounts, as the etchant is introduced through the first etch hole to the third etch hole 355a, 355b and 355c, the etched surface 313 of the substrate 310 can simultaneously have a vertical side 313a and an inverted conical side 313b due to wet etching performed using the etchant.

[0291] Here, during the wet etching process, the third etched pattern 353c can be removed as a portion of the substrate 310 is etched. However, this specification is not limited to this. Specifically, during the wet etching process, at least one of the first etched pattern 353a, the second etched pattern 353b, and the third etched pattern 353c can be removed.

[0292] Figures 14A to 14C This is a cross-sectional view showing the etching process of the substrate of the display panel according to the fourth embodiment of this specification.

[0293] exist Figures 14A to 14C For ease of description, substrate 410 is shown instead of [other substrate]. Figure 2 The display panel 100, but does not exclude the circuit device layer (not shown) disposed on one surface of the substrate 410 (see Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0294] In the following text, glass substrate 410 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0295] Reference Figure 14A After completely etching the other surface of the substrate 410, an organic film 450 is formed on the other surface of the substrate 410 with the substrate 410 flipped up and down so that the other surface faces upward.

[0296] Specifically, an organic film 450 is formed by applying an organic material to the entire other surface of the substrate 410. Here, the organic material forming the organic film 450 can be a colorless or transparent material, but this specification is not limited to this. Alternatively, the material forming the organic film can also be a colored organic material. A screen printing machine can be used to apply the material forming the organic film to the other surface of the substrate 410, but this specification is not limited to this.

[0297] Next, the exposure mask 460 is positioned on the upper side of the organic film 450 at a predetermined distance.

[0298] Here, the exposure mask 460 may include a light-blocking portion LB and a light-transmitting portion LT. The light-blocking portion LB of the exposure mask 460 may be positioned to overlap with multiple display panel regions DPA, and the light-transmitting portion LT may be positioned to overlap with an etched region EA between the multiple display panel regions DPA. Here, a portion of the etched region EA may overlap with a portion of each of the multiple display panel regions DPA.

[0299] The exposure mask 460 may include a transparent substrate 460a, a first light-blocking pattern 461, and a second-first light-blocking pattern 463a and a second-second light-blocking pattern 463b including a plurality of slits S1 and S2.

[0300] Furthermore, the first light-blocking pattern 461 can be disposed on the light-blocking portion LB of the exposure mask 460, and the second-first light-blocking pattern 463a and the second-second light-blocking pattern 463b can be disposed on the light-transmitting portion LT. Here, the first slit S1 and the second slit S2 can be formed between the second-first light-blocking pattern 463a and the second-second light-blocking pattern 463b. Here, the first slit S1 and the second slit S2 can adjust the intensity of the transmitted light source to adjust the linewidth of the second-first light-blocking pattern 463a and the second-second light-blocking pattern 463b. Furthermore, the second-first light-blocking pattern 463a and the second-second light-blocking pattern 463b can each include one or more light-blocking patterns, but this specification is not limited thereto.

[0301] The first slit S1 can be formed between the first light-blocking pattern 461 and the second-first light-blocking pattern 463a, and the second slit S2 can be formed between the second-first light-blocking pattern 463a and the second-second light-blocking pattern 463b.

[0302] The widths of the first slit S1 and the second slit S2 can be different from each other. More specifically, the second slit S2 can have a larger width than the first slit S1. However, this specification is not limited thereto.

[0303] For example, the ratio of the width of the first slit S1 to the width of the second slit S2 can be limited to about 1:5 or greater. However, this specification is not limited to this. Specifically, the width of the first slit S1 can be in the range of about 1 μm to 5 μm, and the width of the second slit S2 can be in the range of about 5 μm to 30 μm. However, this specification is not limited to this.

[0304] Next, using photolithography through the exposure mask 460, an exposure process is performed to irradiate the organic film 450 with light. Here, during the exposure process, while the light is blocked by the first light-blocking pattern 461 set on the exposure mask 460, the light is transmitted through the first slit S1 and the second slit S2 of the light-transmitting portion LT, and the organic film 450 can be irradiated with light.

[0305] Specifically, the organic film 450 can be illuminated by light through the first slit S1 and the second slit S2, which constitute the light-transmitting portion LT and are located between the second-1 light-blocking pattern 463a and the second-2 light-blocking pattern 463b. Here, the area illuminated by light can be the etched area EA of the organic film 450.

[0306] Then, refer to Figure 14B By developing and removing the exposed portion of the organic film 450 located in the etching region EA, a first etched pattern 453a and a second etched pattern 453b can be formed at the position where the first slit S1 and the second slit S2 of the exposure mask 460 overlap in the etching region EA of the organic film 450.

[0307] Here, the first etched pattern 453a and the second etched pattern 453b may each include one or more etched patterns. However, this specification is not limited thereto.

[0308] In addition, a first etched hole 455a and a second etched hole 455b can be formed between the first etched pattern 453a and the second etched pattern 453b.

[0309] A first etched hole 455a may be formed between the portion of the organic film 450 located in the display panel area DPA and the first etched pattern 453a, and a second etched hole 455b may be formed between the first etched pattern 453a and the second etched pattern 453b.

[0310] More specifically, the width of the second etched hole 455b can be made larger than the width of the first etched hole 455a. For example, the ratio of the width of the first etched hole 455a to the width of the second etched hole 455b can be in the range of about 1:5 or greater. However, this specification is not limited to this.

[0311] Furthermore, the width of the first etched hole 455a can be in the range of about 1 μm to 5 μm, and the width of the second etched hole 455b can be in the range of about 5 μm to 30 μm. However, the width of the etched holes is not limited to these ranges.

[0312] The width difference between the first etched hole 455a and the second etched hole 455b is used to adjust the etch cross-sectional shape of the etched surface of the substrate 410 by changing the inflow amount, inflow rate, etc. of the etchant penetrating into the glass substrate 410.

[0313] Reference Figure 14C The substrate 410 is etched by introducing etchant into the first etch hole 455a and the second etch hole 455b between the first etch pattern 453a and the second etch pattern 453b through a wet etching process. Here, the amount of etchant introduced into the substrate 410 through the second etch hole 455b of the organic film 450 is greater than the amount of etchant introduced into the substrate 410 through the first etch hole 455a.

[0314] As a result, since the etching of the etched surface in the etch region EA of the glass substrate 410 is performed isotropically faster through the second etch hole 455b than through the first etch hole 455a, the etched surface 413 of the substrate 410 in the etch region EA can include a cross section with a steep inverted conical shape.

[0315] Here, after the etching process, the first etched pattern 453a of the organic film 450 can be retained, and the second etched pattern 453b can be removed. However, this specification is not limited thereto.

[0316] Figures 15A to 15C This is a cross-sectional view showing the etching process of the substrate of the display panel according to the fifth embodiment of this specification.

[0317] exist Figures 15A to 15C For ease of description, substrate 510 is shown instead of [other substrate]. Figure 2 The display panel 100, but does not exclude the circuit device layer (not shown) disposed on one surface of the substrate 510 (see Figure 2 122), Light-emitting device layer (not shown) (see 122) Figure 2 124) and encapsulation layer (not shown) (see 124) Figure 2 (126).

[0318] In the following text, substrate 510 may refer to a glass substrate on which a circuit device layer 122, a light-emitting device layer 124 and an encapsulation layer 126 are disposed.

[0319] Reference Figure 15A After completely etching the other surface of the substrate 510, an organic film 550 is formed on the other surface of the substrate 510 with the substrate 510 flipped up and down so that the other surface faces upward.

[0320] Specifically, an organic film 550 is formed by applying an organic material to the entire other surface of the substrate 510. Here, the organic material forming the organic film 550 can be a colorless or transparent material, but this specification is not limited to this. Alternatively, the material forming the organic film can also be a colored organic material. A screen printing machine can be used to apply the material forming the organic film to the other surface of the substrate 510, but this specification is not limited to this.

[0321] Next, the exposure mask 560 is positioned on the upper side of the organic film 550 at a predetermined distance.

[0322] Here, the exposure mask 560 may include a light-blocking portion LB and a light-transmitting portion LT. The light-blocking portion LB of the exposure mask 560 may be positioned to overlap with multiple display panel regions DPA, and the light-transmitting portion LT may be positioned to overlap with an etched region EA between the multiple display panel regions DPA. Here, a portion of the etched region EA may overlap with a portion of each of the multiple display panel regions DPA.

[0323] The exposure mask 560 may include a transparent substrate 560a, a first light-blocking pattern 561, and second-1st to second-4th light-blocking patterns 563a, 563b, 563c, and 563d including a plurality of slits S1, S2, S3, and S4.

[0324] Furthermore, the first light-blocking pattern 561 can be disposed on the light-blocking portion LB of the exposure mask 560, and the second-first to second-fourth light-blocking patterns 563a, 563b, 563c, and 563d can be disposed on the light-transmitting portion LT. Here, the first to fourth slits S1, S2, S3, and S4 can be formed between the second-first to second-fourth light-blocking patterns 563a, 563b, 563c, and 563d. Here, the first to fourth slits S1, S2, S3, and S4 can adjust the intensity of the transmitted light source to adjust the linewidth of the second-first to second-fourth light-blocking patterns 563a, 563b, 563c, and 563d. Furthermore, the second-first to second-fourth light-blocking patterns 563a, 563b, 563c, and 563d can each include one or more light-blocking patterns, but this specification is not limited thereto.

[0325] A first slit S1 can be formed between a first light-blocking pattern 561 and a second-first light-blocking pattern 563a, and a second slit S2 can be formed between a second-first light-blocking pattern 563a and a second-second light-blocking pattern 563b. Furthermore, a third slit S3 can be formed between a second-second light-blocking pattern 563b and a second-third light-blocking pattern 563c. Additionally, a fourth slit S4 can be formed between a second-third light-blocking pattern 563c and a second-fourth light-blocking pattern 563d.

[0326] The first to third slits S1, S2, and S3 may be formed to have the same width, and the width of the fourth slit S4 may be formed to be greater than the width of each of the first to third slits S1, S2, and S3. However, this specification is not limited thereto.

[0327] For example, the ratio of the width of each of the first to third slits S1, S2, and S3 to the width of the fourth slit S4 can be about 1:3 or greater. However, this specification is not limited to this. More specifically, the width of each of the first to third slits S1, S2, and S3 can be in the range of about 1 μm to 5 μm, and the width of the fourth slit S4 can be in the range of about 3 μm to 20 μm. However, this specification is not limited to this.

[0328] Next, using photolithography through the exposure mask 560, an exposure process is performed to irradiate the organic film 550 with light. Here, during the exposure process, while the light is blocked by the first light-blocking pattern 561 set on the exposure mask 560, the light is transmitted through the first to fourth slits S1, S2, S3 and S4 of the light-transmitting portion LT, and the organic film 550 can be irradiated with light.

[0329] Specifically, the organic film 550 can be illuminated by light through the first to fourth slits S1, S2, S3, and S4, which constitute the light-transmitting portion LT and are located between the second to fourth light-blocking patterns 563a, 563b, 563c, and 563d. Here, the area illuminated by light can be the etched area EA of the organic film 550.

[0330] Then, refer to Figure 15B By developing and removing the exposed portion of the organic film 550 located in the etched region EA, first etched patterns to fourth etched patterns 553a, 553b, 553c, and 553d can be formed at the locations where they overlap with the first to fourth slits S1, S2, S3, and S4 of the exposure mask 560 in the etched region EA of the organic film 550. Each of the first to fourth etched patterns 553a, 553b, 553c, and 553d may comprise one or more etched patterns. However, this specification is not limited thereto.

[0331] Next, first etched holes to fourth etched holes 555a, 555b, 555c and 555d can be formed between the first etched pattern to the fourth etched pattern 553a, 553b, 553c and 553d.

[0332] More specifically, a first etched hole 555a may be formed between the portion of the organic film 550 located in the display panel region DPA and the first etched pattern 553a, and a second etched hole 555b may be formed between the first etched pattern 553a and the second etched pattern 553b. Furthermore, a third etched hole 555c may be formed between the second etched pattern 553b and the third etched pattern 553c. Additionally, a fourth etched hole 555d may be formed between the third etched pattern 553c and the fourth etched pattern 553d.

[0333] More specifically, the widths of the first to third etched holes 555a, 555b and 555c can be formed to have similar dimensions, and the width of the fourth etched hole 555d can be formed to be greater than the width of each of the first to third etched holes 555a, 555b and 555c.

[0334] For example, the ratio of the width of each of the first etched hole 555a, the second etched hole 555b, and the third etched hole 555c to the width of the fourth etched hole 555d can be about 1:3 or greater. However, this specification is not limited to this.

[0335] Furthermore, the width of each of the first to third etched holes 555a, 555b, and 555c can be in the range of approximately 1 μm to 5 μm, and the width of the fourth etched hole 555d can be in the range of approximately 3 μm to 20 μm. However, the width of the etched holes is not necessarily limited to these ranges.

[0336] The width difference between the first to third etched holes 555a, 555b and 555c and the fourth etched hole 555d is used to adjust the etch cross-sectional shape of the etched surface of the substrate 510 by changing the inflow amount, inflow rate and other parameters of the etchant penetrating the substrate 510.

[0337] Then, refer to Figure 15C By performing a wet etching process, etchant is introduced into the first to fourth etch holes 555a, 555b, 555c, and 555d between the first to fourth etch patterns 553a, 553b, 553c, and 553d to etch the substrate 510 located in the etch region EA. Here, due to the etching of the substrate 510, only the first to third etch patterns 553a, 553b, and 553c can remain. However, this specification is not limited to this.

[0338] More specifically, in Figure 15C In this process, the amount of etchant introduced into the substrate 510 through the fourth etch hole 555d of the organic film 550 is greater than the amount of etchant introduced through the first to third etch holes 555a, 555b, and 555c. As a result, since the etching of the etched surface in the etch region EA of the substrate 510 is performed more isotropically through the fourth etch hole 555d than through the first to third etch holes 555a, 555b, and 555c, the etched surface 513 of the substrate 510 in the etch region EA can have a cross-section including a positive conical side 513a, a vertical side 513b, and an inverted conical side 513c. Furthermore, the inverted conical side 513c can be inclined at a larger angle than the positive conical side 513a.

[0339] In this way, in the display device according to this specification, by adjusting the width of the etched holes between multiple etched patterns during the wet etching process, the etched surface of the substrate can have various shapes, such as a rounded surface shape including vertical and conical sides, an inverted conical shape, or a regular conical shape.

[0340] Therefore, in the display device according to this specification, by etching an organic film disposed on another surface of a substrate to form multiple etching patterns, and then using the etching patterns as an etching mask to etch the portion of the substrate located in the etching area, the accuracy of the etching position on the substrate can be improved compared with laser process.

[0341] In the display device according to this specification, by forming a side coating film on the etched surface of the substrate, light leakage can be prevented or reduced, and the edges of the display panel can be prevented or avoided from being visible.

[0342] In the display device according to this specification, since the etched surface of the substrate can be controlled by adjusting the width of the etched holes between the etched patterns of the organic film, the rigidity of the etched surface of the substrate can be improved, and accidents of workers being injured by the sharp etched surface can be prevented or reduced.

[0343] In the display device according to this specification, by forming an organic film on another surface of the substrate to define an etched area for cutting the substrate, damage to the substrate can be prevented or reduced, and external impacts can be prevented or reduced from being transmitted to the display panel.

[0344] Furthermore, in the display device according to this specification, since an organic film with multiple etched patterns is formed on another surface of the substrate, it is not necessary to form a separate side coating film, which can reduce manufacturing processes and costs.

[0345] According to this specification, by forming multiple etching patterns on an organic film disposed on another surface of a substrate, and then using the etching patterns as an etching mask to etch portions of the substrate located in the etching area, the accuracy of the etching position on the substrate can be improved compared with laser processes.

[0346] According to this specification, by forming a side coating film on the etched surface of the substrate, light leakage can be prevented or reduced, and the visible edges of the display panel can be prevented or reduced.

[0347] Furthermore, according to this specification, since the tilt pattern of the etched surface of the substrate can be controlled by adjusting the width of the etched holes between the etched patterns formed on the organic film, the rigidity of the etched surface of the substrate can be improved, and accidents of workers being injured by the sharp etched surface can be prevented or reduced.

[0348] According to this specification, by forming an organic film on another surface of the substrate to define an etched area for cutting the substrate, damage to the substrate can be prevented or reduced, and external impacts can be prevented or reduced from being transmitted to the display panel.

[0349] Furthermore, according to this specification, since an organic film with multiple etched patterns is formed on another surface of the substrate, it is not necessary to form a separate side coating film, which can reduce manufacturing processes and costs.

[0350] The display device according to embodiments of this disclosure can be applied to mobile devices, video phones, smartwatches, watch phones, wearable devices, foldable devices, rollable devices, bendable devices, flexible devices, curved devices, sliding devices, variable devices, electronic notebooks, e-books, portable multimedia players (PMPs), personal digital assistants (PDAs), MP3 players, mobile medical devices, desktop personal computers (PCs), laptop PCs, netbooks, workstations, navigation devices, automotive display devices, theater displays, televisions (TVs), wallpaper devices, signage devices, laptop computers, monitors, cameras, portable video cameras, home appliances, etc. Furthermore, the display device and its manufacturing method according to one or more embodiments of this disclosure can be applied to various types of display devices such as organic light-emitting lighting devices or inorganic light-emitting lighting devices, and this disclosure is not limited thereto.

[0351] A display device according to one or more embodiments of the present disclosure can be described as follows.

[0352] A display device according to one or more embodiments of the present disclosure may include: a substrate having a plurality of pixels disposed on one surface and including a side surface as an etched surface; and an organic film disposed on another surface of the substrate opposite to one surface and including a plurality of etched patterns at positions corresponding to the etched surfaces.

[0353] The display device may also include a side coating film disposed on an etched surface of the substrate.

[0354] The etched surface of the substrate may include a tapered end face, and the side coating film may cover the tapered end face of the etched surface.

[0355] The display device may also include a polarizing film on a substrate and having an end that protrudes beyond the substrate, and a side coating film may be configured to fill the step difference between the substrate and the polarizing film.

[0356] An etching prevention film can be placed between the side coating and the polarizing film.

[0357] The side coating can be made of light-absorbing organic materials.

[0358] Multiple etched patterns of an organic film may include at least two or more etched patterns.

[0359] Multiple etching patterns may include a first etching pattern and a second etching pattern.

[0360] A first etching hole can be provided between the side end of the organic film and the first etching pattern, and a second etching hole can be provided between the first etching pattern and the second etching pattern, and the first etching hole and the second etching hole can have different widths.

[0361] The ratio of the width of the first etched hole to the width of the second etched hole can be 1:5 or greater. The width of the first etched hole can be in the range of 1μm to 5μm, and the width of the second etched hole can be in the range of 5μm to 30μm.

[0362] Multiple etching patterns may include a first etching pattern, a second etching pattern, and a third etching pattern. A first etching hole may be provided between the side end of the organic film and the first etching pattern. A second etching hole may be provided between the first and second etching patterns. A third etching hole may be provided between the second and third etching patterns. The first etching hole to the third etching hole may have the same width or different widths.

[0363] The width ratio of the first etched hole to the third etched hole can be in the range of 1:1:1 to 1:1.5:2, the width of the first etched hole can be in the range of 1μm to 5μm, the width of the second etched hole can be in the range of 1μm to 7μm, and the width of the third etched hole can be in the range of 1μm to 10μm; or, the width ratio of the first etched hole to the third etched hole can be in the range of 1:3:7 to 1:5:10, the width of the first etched hole can be in the range of 1μm to 3μm, the width of the second etched hole can be in the range of 3μm to 15μm, and the width of the third etched hole can be in the range of 7μm to 50μm.

[0364] Multiple etching patterns may include a first etching pattern, a second etching pattern, a third etching pattern, and a fourth etching pattern. A first etching hole may be provided between the side end of the organic film and the first etching pattern. A second etching hole may be provided between the first and second etching patterns. A third etching hole may be provided between the second and third etching patterns. A fourth etching hole may be provided between the third and fourth etching patterns. The first to fourth etching holes have different widths, or the first to third etching holes have the same width. The fourth etching hole has a width greater than that of each of the first to third etching holes.

[0365] The widths of the first to fourth etched holes can be formed to gradually increase from the side end of the organic film toward the outer boundary portion. The ratio of the widths of the first to fourth etched holes can be in the range of 1:3:5:7 to 1:5:10:15, and the width of the first etched hole can be in the range of 1 μm to 3 μm, the width of the second etched hole can be in the range of 3 μm to 5 μm, the width of the third etched hole can be in the range of 5 μm to 10 μm, and the width of the fourth etched hole can be in the range of 7 μm to 20 μm.

[0366] The ratio of the width of each of the first to third etched holes to the width of the fourth etched hole can be 1:3 or greater, the width of each of the first to third etched holes can be in the range of 1 μm to 5 μm, and the width of the fourth etched hole can be in the range of 3 μm to 20 μm.

[0367] The etched surface of the substrate may include a conical side, a vertical side, and an inverted conical side, or may include a vertical side and an inverted conical side, or may include an inverted conical side or a conical side.

[0368] At the inverted conical side, vertical side, and positive conical side of the etched surface constituting the substrate, the inverted conical side can be tilted at a greater angle than the positive conical side.

[0369] Organic films and side-coated films can be made from the same material.

[0370] A method of manufacturing a display device according to one or more embodiments of the present disclosure may include: forming a plurality of display units on one surface of a substrate; forming an organic film on another surface of the substrate opposite to one surface; forming a plurality of etch patterns by patterning the organic film; and forming etch grooves along the etched areas by etching the substrate below the plurality of etch patterns.

[0371] The method may also include: forming a side coating on the etching tank; and cutting the side coating disposed on the etching tank.

[0372] Forming multiple etch patterns can include: forming multiple etch patterns on an organic film located in an etched region by using a patterning process of an exposure mask having multiple light-blocking patterns and slits disposed between the light-blocking patterns, and simultaneously forming etch holes between the multiple etch patterns.

[0373] Multiple etched patterns can include at least two or more etched patterns.

[0374] Etched holes can have different widths, or at least one etched hole can have a larger width than the others.

[0375] Forming an etch groove by etching a substrate below multiple etch patterns along an etched area can include: forming an etched surface including the etch groove by guiding an etchant through etch holes between multiple etch patterns and isotropically etching the etched area of ​​the substrate.

[0376] The etched surface may include a conical side, a vertical side, and an inverted conical side; or include a vertical side and an inverted conical side; or include an inverted conical side or a conical side.

[0377] The effects of this disclosure are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

[0378] While embodiments have been described in detail above with reference to the accompanying drawings, this disclosure is not limited to these embodiments, and various variations and modifications can be made without departing from the technical spirit of this disclosure. Therefore, the embodiments disclosed herein should be considered descriptive rather than limiting of the technical spirit of this disclosure, and the scope of the technical spirit of this disclosure is not limited by these embodiments. Thus, the above embodiments should be understood as exemplary rather than restrictive in any respect.

[0379] Cross-references to related applications

[0380] This application claims priority and benefit to Korean Patent Application No. 2024-0120776, filed in Korea on September 5, 2024, the entire disclosure of which is incorporated herein by reference for all purposes.

Claims

1. A display device comprising: a substrate having a plurality of pixels provided on one surface and including a side surface as an etching surface; and an organic film provided on another surface of the substrate opposite to the one surface and including a plurality of etching patterns at positions corresponding to the etching surface.

2. The display device according to claim 1, further comprising: a side coating film provided on the etching surface of the substrate. The organic film and the side coating film are made of the same material.

3. The display device of claim 2, wherein, 4. The display device according to claim 2, wherein the etching surface of the substrate includes a tapered end surface, and the side coating film covers the tapered end surface of the etching surface.

5. The display device according to claim 2, further comprising a polarizing film on the substrate and having an end portion protruding beyond the substrate, the side coating film is provided to fill a step difference between the substrate and the polarizing film. wherein an etching prevention film is provided between the side coating film and the polarizing film.

6. The display device of claim 5, wherein, The side coating film is made of an organic material that absorbs light.

7. The display device according to claim 2, wherein The plurality of etching patterns of the organic film includes at least two or more etching patterns.

8. The display device according to claim 1, wherein The plurality of etching patterns includes a first etching pattern and a second etching pattern.

9. The display device of claim 8, wherein, A first etching hole is provided between a side end portion of the organic film and the first etching pattern, a second etching hole is provided between the first etching pattern and the second etching pattern, and the first etching hole and the second etching hole have widths of different sizes.

10. The display device of claim 9, wherein, A ratio of the width of the first etching hole to the width of the second etching hole is 1:5 or more, the width of the first etching hole is in a range of 1 μm to 5 μm, and the width of the second etching hole is in a range of 5 μm to 30 μm.

11. The display device of claim 10, wherein, The plurality of etching patterns includes a first etching pattern, a second etching pattern, and a third etching pattern, and 12. The display device of claim 8, wherein, wherein a first etching hole is provided between a side end portion of the organic film and the first etching pattern, a second etching hole is provided between the first etching pattern and the second etching pattern, a third etching hole is provided between the second etching pattern and the third etching pattern, and the first etching hole to the third etching hole have widths of the same size or different sizes. A ratio of the widths of the first etching hole to the third etching hole is in a range of 1:1:1 to 1:1.5:2, a size of the width of the first etching hole is in a range of 1 μm to 5 μm, a size of the width of the second etching hole is in a range of 1 μm to 7 μm, and a size of the width of the third etching hole is in a range of 1 μm to 10 μm, or 13. The display device of claim 12, wherein, A ratio of the widths of the first etching hole to the third etching hole is in a range of 1:3:7 to 1:5:10, a size of the width of the first etching hole is in a range of 1 μm to 3 μm, a size of the width of the second etching hole is in a range of 3 μm to 15 μm, and a size of the width of the third etching hole is in a range of 7 μm to 50 μm. ​ 14. The display device of claim 8, wherein, The plurality of etching patterns includes a first etching pattern, a second etching pattern, a third etching pattern, and a fourth etching pattern, wherein a first etching hole is provided between the side end portion of the organic film and the first etching pattern, a second etching hole is provided between the first etching pattern and the second etching pattern, a third etching hole is provided between the second etching pattern and the third etching pattern, and a fourth etching hole is provided between the third etching pattern and the fourth etching pattern, and wherein the first etching hole to the fourth etching hole have different sizes of width, or the first etching hole to the third etching hole have the same size of width and the fourth etching hole has a width greater than that of each of the first etching hole to the third etching hole.

15. The display device of claim 14, wherein, The width of the first etching hole to the fourth etching hole is formed to gradually increase from the side end portion of the organic film toward an outer boundary portion, the ratio of the width of the first etching hole to the fourth etching hole is in the range of 1:3:5:7 to 1:5:10:15, and the width of the first etching hole is in the range of 1 μm to 3 μm, the width of the second etching hole is in the range of 3 μm to 5 μm, the width of the third etching hole is in the range of 5 μm to 10 μm, and the width of the fourth etching hole is in the range of 7 μm to 20 μm.

16. The display device of claim 14, wherein, The ratio of the width of each of the first etching hole to the third etching hole to the width of the fourth etching hole is 1:3 or more, the width of each of the first etching hole to the third etching hole is in the range of 1 μm to 5 μm, and the width of the fourth etching hole is in the range of 3 μm to 20 μm.

17. The display device of claim 1, wherein, The etched surface of the substrate includes a positive taper side, a perpendicular side, and an inverse taper side, includes the perpendicular side and the inverse taper side, or includes the inverse taper side or the positive taper side.

18. The display device of claim 17, wherein, At the inverse taper side, the perpendicular side, and the positive taper side constituting the etched surface of the substrate, the inverse taper side is inclined at a greater angle than the positive taper side.

19. A method of manufacturing a display device, the method comprising the steps of: forming a plurality of display units on one surface of a substrate; forming an organic film on another surface of the substrate opposite to the one surface; forming a plurality of etching patterns by patterning the organic film; and forming an etching groove along an etching region by etching the substrate under the plurality of etching patterns.

20. The method according to claim 19, further comprising the steps of: forming a side coating film on the etching groove; and cutting the side coating film provided on the etching groove.

21. The method of claim 19, wherein, The step of forming the plurality of etching patterns includes the step of forming the plurality of etching patterns on the organic film located in the etching region by using a patterning process of an exposure mask having a plurality of light-blocking patterns and slits provided between the light-blocking patterns, and simultaneously forming etching holes between the plurality of etching patterns.

22. The method of claim 21, wherein, The plurality of etching patterns includes at least two or more etching patterns.

23. The method of claim 22, wherein, The etch holes have different sizes of width, or at least one etch hole has a greater width than the other etch holes.

24. The method of claim 21, wherein, The step of forming the etch trench along the etch region by etching the substrate under the plurality of etch patterns includes a step of forming an etch surface including the etch trench by introducing an etchant through the etch holes between the plurality of etch patterns and isotropically etching the etch region of the substrate.

25. The method of claim 24, wherein, The etch surface includes a positive taper side, a vertical side, and an inverted taper side, includes a vertical side and an inverted taper side, or includes an inverted taper side or a positive taper side.

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