Composite material, thin film, preparation method of thin film, photoelectric device and display device

Abstract

The invention discloses a composite material, a thin film, a preparation method of the thin film, a photoelectric device and a display device, and relates to the technical field of display. The composite material comprises a semiconductor material and a passivator, and the structural formula of the passivator is shown in the specification. The composite material provided by the invention has relatively high carrier mobility.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a composite material, a thin film and its preparation method, an optoelectronic device and a display apparatus. Background Technology

[0002] In related technologies, semiconductor materials are often used as the materials for the carrier functional layer, and the carrier mobility of existing semiconductor materials needs to be further improved. Summary of the Invention

[0003] In view of this, this application provides a composite material, a thin film, a method for preparing the same, an optoelectronic device, and a display device.

[0004] The embodiments of this application are implemented as follows: a composite material includes a semiconductor material and a passivating agent, wherein the passivating agent has the following structural formula:

[0005] Wherein, X is selected from halogens;

[0006] Ar is selected from one or more of the following: aryl (6-60 ring atoms, substituted or unsubstituted), heteroaryl (5-60 ring atoms, substituted or unsubstituted), arylamino (6-60 ring atoms, substituted or unsubstituted), aryloxy (6-60 ring atoms, substituted or unsubstituted), arylthiol (6-60 ring atoms, substituted or unsubstituted), heteroarylamino (5-60 ring atoms, substituted or unsubstituted), heteroaryloxy (5-60 ring atoms, substituted or unsubstituted), and heteroarylthiol (5-60 ring atoms); wherein, in Ar, the substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C20 alkyl, C1-C20 alkoxy, C1-C20 alkylthio, aryl (6-60 ring atoms, aryloxy (6-60 ring atoms, arylthio (6-60 ring atoms), and arylthio (6-60 ring atoms);

[0007] L is selected from single bonds, substituted or unsubstituted C1-C40 alkylene groups, substituted or unsubstituted C2-C40 alkenyl groups, substituted or unsubstituted C2-C40 alkyne groups, substituted or unsubstituted C2-C20 etheryl groups, substituted or unsubstituted aryl groups, substituted or unsubstituted aryloxy groups, substituted or unsubstituted arylthio groups, and substituted or unsubstituted -(CH2). n1 CO(CH2) n2 -, substituted or unsubstituted -(CH2) n3 NHCO(CH2) n4 -, substituted or unsubstituted -(CH2) n5 CONH(CH2) n6 -, substituted or unsubstituted -(CH2) n7COO(CH2) n8 - is one or more of the following: n1 to n8 are each independently selected from integers from 1 to 20; in L, the substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1 to C20 alkyl, C1 to C20 alkoxy, C1 to C20 alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, and arylthio with 6 to 60 ring atoms.

[0008] Accordingly, this application also provides a thin film, the material of which includes the above-mentioned composite material.

[0009] Accordingly, embodiments of this application also provide a method for preparing a thin film, comprising the following steps:

[0010] Provide the aforementioned composite material;

[0011] The composite material is deposited to obtain a thin film.

[0012] Accordingly, embodiments of this application also provide an optoelectronic device, comprising an anode, an active layer, and a cathode stacked together, wherein,

[0013] The optoelectronic device further includes a hole functional layer located between the anode and the active layer. The material of the hole functional layer includes a first passivating agent, which is the passivating agent described above; and / or

[0014] The optoelectronic device further includes an electronic functional layer located between the active layer and the cathode. The electronic functional layer is made of a second passivating agent, which is the passivating agent described above; and / or

[0015] The optoelectronic device further includes an electronic functional layer and a passivation layer. The electronic functional layer is located between the active layer and the passivation layer, and the passivation layer is located between the electronic functional layer and the cathode. The material of the passivation layer includes a third passivating agent, which is the passivating agent described above.

[0016] Accordingly, this application also provides a display device, which includes the above-mentioned optoelectronic device.

[0017] The composite material provided in this application has a high carrier mobility. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a flowchart of the thin film preparation method provided in the embodiments of this application;

[0020] Figure 2 This is a schematic diagram of the structure of the optoelectronic device provided in the embodiments of this application;

[0021] Figure 3 This is a schematic diagram of the structure of another optoelectronic device provided in the embodiments of this application;

[0022] Figure 4 This is a schematic diagram of the structure of another optoelectronic device provided in the embodiments of this application;

[0023] Figure 5 This is a schematic diagram of the structure of another optoelectronic device provided in the embodiments of this application.

[0024] Figure label:

[0025] Optoelectronic device 100; anode 10; hole functional layer 20; active layer 30; electron functional layer 40; cathode 50; passivation layer 60. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0027] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0028] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0029] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0030] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0031] In this application, aromatic groups, aromatic families, and aromatic ring systems have the same meaning and can be used interchangeably.

[0032] In this application, heteroaromatic groups, heteroaromatic families, and heteroaromatic ring systems have the same meaning and can be used interchangeably.

[0033] In this application, "substituted or unsubstituted" means that the defined group may or may not be substituted. It is understood that when the group is substituted by a substituent, the number of substituents may be one, two, three or more, and when the number of substituents is two or more, the substituents may be the same or different.

[0034] In this application, "ring atom number" refers to the number of ring atoms constituting the ring itself in a cyclic compound (e.g., a monocyclic or polycyclic compound) obtained by atomic bonding, i.e., the number of atoms forming the ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring atom count. The same applies to the "ring atom number" described below unless otherwise specified. For example, the benzene ring has 6 ring atoms, the naphthalene ring has 10 ring atoms, and the thiophene group has 5 ring atoms.

[0035] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and for polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" means an aryl containing 6 to 40 ring atoms, and the aryl may optionally be further substituted. Preferably, it is a substituted or unsubstituted aryl having 6 to 30 ring atoms; more preferably, it is a substituted or unsubstituted aryl having 6 to 18 ring atoms; particularly preferably, it is a substituted or unsubstituted aryl having 6 to 14 ring atoms, and the aryl may optionally be further substituted. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0036] In this application, "heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, Si atom, P atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms" refers to a heteroaryl group having 5 to 60 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 5 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 5 to 14 ring atoms, and the heteroaryl group may optionally be further substituted; suitable examples include, but are not limited to: thiophene, furanyl, pyrrole, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, etc. Triazinyl, acridineyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinylpyrimidineyl, pyridinylpyrazinyl, benzothiopheneyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrololyl, thienopyrrololyl, thienopyrrololyl, furanolololyl, furanolofuranyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridineyl, primidyl, quinazolinoneyl, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives.

[0037] In this application, "alkyl" can mean straight-chain, branched, and / or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 30, 1 to 25, 1 to 20, 1 to 15, 1 to 10, or 1 to 6. Phrases containing this term, such as "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each time it appears, it can independently be a C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, etc. tert-amyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl The compounds include 3,7-dimethyloctyl, cyclooctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-hepta ...

[0038] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-Decaalkoxy (-OC) 10 H 21 ), n-dodecyloxy (-OC) 12 H 25 ).

[0039] "alkylthiol" refers to a group with the structure "-S-alkyl", that is, an alkyl group as defined above that is attached to other groups via a sulfur atom. Suitable examples of phrases containing this term include, but are not limited to: methylthio (-S-CH3 or -SMe), ethylthio (-S-CH2CH3 or -SEt), tert-butylthio (-SC(CH3)3 or -StBu), and n-hexanethio (-S-C6H). 13 ), n-Decadecylthio (-SC) 10 H 21 ), n-Dodecylthio (-SC) 12 H 25 Similarly, "aryl thiol" refers to a group with the structure "-S-aryl", and "heteroaryl thiol" refers to a group with the structure "-S-heteroaryl".

[0040] In this application, "aryloxy group" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc.

[0041] In this application, amino represents -NR 1 R 2 , where R 1 R 2 Each can independently represent H or alkyl, that is, amino can refer to -NH2, -NH (alkyl), or -N alkyl (alkyl).

[0042] In this application, "arylamino" refers to a group with the structure "-NR-aryl" or "-N-aryl (aryl)", that is, an aryl group as defined above is attached to other groups via an N atom, for example... "Heteroarylene amino" refers to a group with the structure "-NR-heteroaryl" or "-N-heteroaryl (heteroaryl)", that is, a heteroaryl group as defined above is attached to other groups via an N atom.

[0043] In this application, "halogen" represents -Cl, -Br, -F or -I; hydroxyl represents -OH; carboxyl represents -COOH; nitro represents -NO2; sulfonic acid represents -SO3H; mercapto represents -SH; and cyano represents...

[0044] In this application, "alkyl carbonyl" refers to a structure with the following structure: The group, "alkoxycarbonyl", refers to the structure with The group is denoted by R. Where R represents an alkyl group, and C1 to C30 in the alkyl carbonyl group refers to the number of carbon atoms in the entire group.

[0045] In this application, -(R) nThis indicates that R can appear 0 to n times, and each appearance can be independently selected from the group list, meaning each R can be selected from different groups. If n is 0, it means there is no substituent R.

[0046] In this application, if the single bond connecting the substituents extends through the corresponding ring, then the substituent can be attached to any position on the ring, where "*" indicates a attachment site, for example... Ar in If -R extends through the benzene ring, it means that R can be attached to any substituted site on the benzene ring.

[0047] In this application, L is a linking group with two points at both ends. When L is formed by multiple combinations, the linking order can be changed, and all possible linking combinations fall within the protection scope of L in this application.

[0048] Semiconductor materials include inorganic nanoparticles and organic semiconductor materials. Defects in inorganic nanoparticles generally include surface defects and bulk defects. Surface defects refer to structural or chemical defects on the nanoparticle surface. Due to the large number of atoms on the surface of nanoparticles, surface defects are very important and can include surface oxides, the presence or absence of surface modifiers, and the absence or heterogeneity of surface atoms. Surface defects have a significant impact on the catalytic activity, optical properties, and stability of nanoparticles. Bulk defects refer to structural defects or distortions within the nanoparticles. These defects can be lattice defects, such as vacancies (missing atoms), heterogeneous atoms (different types of atoms replacing atoms in the lattice), dislocations (dislocations in the crystal), or grain boundaries (interfaces between grains). Bulk defects affect the physical and chemical properties of nanoparticles, such as their mechanical and electrical properties. Excessive defects in inorganic nanoparticles and low cross-linking in organic semiconductor materials can both lead to decreased carrier mobility and exciton quenching, significantly reducing the brightness and lifespan of optoelectronic devices.

[0049] The technical solution of this application is as follows:

[0050] In a first aspect, embodiments of this application provide a composite material, comprising a semiconductor material and a passivating agent, wherein the passivating agent has the following structural formula:

[0051] Wherein, X is selected from halogens;

[0052] Ar is selected from one or more of the following: aryl (6-60 ring atoms, substituted or unsubstituted), heteroaryl (5-60 ring atoms, substituted or unsubstituted), arylamino (6-60 ring atoms, substituted or unsubstituted), aryloxy (6-60 ring atoms, substituted or unsubstituted), arylthiol (6-60 ring atoms, substituted or unsubstituted), heteroarylamino (5-60 ring atoms, substituted or unsubstituted), heteroaryloxy (5-60 ring atoms, substituted or unsubstituted), and heteroarylthiol (5-60 ring atoms); wherein, in Ar, the substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C20 alkyl, C1-C20 alkoxy, C1-C20 alkylthio, aryl (6-60 ring atoms, aryloxy (6-60 ring atoms, arylthio (6-60 ring atoms), and arylthio (6-60 ring atoms);

[0053] L is selected from single bonds, substituted or unsubstituted C1-C40 alkylene groups, substituted or unsubstituted C2-C40 alkenyl groups, substituted or unsubstituted C2-C40 alkyne groups, substituted or unsubstituted C2-C20 etheryl groups, substituted or unsubstituted aryl groups, substituted or unsubstituted aryloxy groups, substituted or unsubstituted arylthio groups, and substituted or unsubstituted -(CH2). n1 CO(CH2) n2 -, substituted or unsubstituted -(CH2) n3 NHCO(CH2) n4 -, substituted or unsubstituted -(CH2) n5 CONH(CH2) n6 -, substituted or unsubstituted -(CH2) n7 COO(CH2) n8 - is one or more of the following: n1 to n8 are each independently selected from integers from 1 to 20; in L, the substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1 to C20 alkyl, C1 to C20 alkoxy, C1 to C20 alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, and arylthio with 6 to 60 ring atoms.

[0054] The composite material provided in this application introduces a passivating agent into the semiconductor material. The -Ar in the passivating agent can act as a framework, increasing the contact area between the passivating agent and the semiconductor material and improving the passivation effect. The -NH2 in the passivating agent acts as a fulcrum to connect the halogen X in HX, while the halogen X directly passivates the semiconductor material. Through the synergistic effect of -Ar, -NH2 and halogen X, the passivating agent can effectively passivate the surface defects and bulk defects of the semiconductor material, and promote the cross-linking of the semiconductor material through bonding with the semiconductor material, thereby improving the carrier mobility of the semiconductor material.

[0055] In some embodiments, the heteroatoms in the heteroaryl group, the heteroaryloxy group, the heteroarylamino group, and the heteroarylthiol group are each independently selected from one or more of O, P, N, and S.

[0056] In some embodiments, the aryl group having 6 to 60 ring atoms can be selected from aryl groups having 8 to 50 ring atoms, aryl groups having 10 to 40 ring atoms, aryl groups having 20 to 30 ring atoms, etc., specifically phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthryl, etc.

[0057] In some embodiments, the heteroaryl group having 5 to 60 ring atoms can be selected from heteroaryl groups having 8 to 50 ring atoms, heteroaryl groups having 10 to 40 ring atoms, heteroaryl groups having 20 to 30 ring atoms, etc., specifically thiazolyl, thiophenel, furanyl, pyrrolel, pyridinyl, pyrimidinyl, imidazolyl, azole, pyrazinyl, indolyl, quinolinyl, pteridinyl, acridinel, carbazolyl, etc.

[0058] In some embodiments, the arylamino group having 6 to 60 ring atoms can be selected from arylamino groups having 8 to 50 ring atoms, arylamino groups having 10 to 40 ring atoms, arylamino groups having 20 to 30 ring atoms, etc., specifically phenylamino, naphthylamino, fluorenylamino, phenanthreneamino, etc.

[0059] In some embodiments, the aryloxy group having 6 to 60 ring atoms can be selected from aryloxy groups having 8 to 50 ring atoms, aryloxy groups having 10 to 40 ring atoms, aryloxy groups having 20 to 30 ring atoms, etc., specifically phenoxy, naphthoxy, fluorenoxy, phenanthreneoxy, etc.

[0060] In some embodiments, the aryl mercapto group having 6 to 60 ring atoms can be selected from aryl mercapto groups having 8 to 50 ring atoms, aryl mercapto groups having 10 to 40 ring atoms, aryl mercapto groups having 20 to 30 ring atoms, etc., specifically phenyl mercapto, naphthyl mercapto, fluorenyl mercapto, phenanthryl mercapto, etc.

[0061] In some embodiments, the heteroarylamino group having 5 to 60 ring atoms can be selected from heteroarylamino groups having 8 to 50 ring atoms, heteroarylamino groups having 10 to 40 ring atoms, heteroarylamino groups having 20 to 30 ring atoms, etc., specifically thienylamino, imidazolylamino, thiazolylamino, pyrimidinylamino, thiadiazolylamino, pyridoxy, carbazoleoxy, etc.

[0062] In some embodiments, the heteroaryloxy group having 5 to 60 ring atoms can be selected from heteroaryloxy groups having 8 to 50 ring atoms, heteroaryloxy groups having 10 to 40 ring atoms, heteroaryloxy groups having 20 to 30 ring atoms, etc., specifically thiophenoxy, imidazolyloxy, thiazolyloxy, pyrimidineoxy, thiadiazoloxy, pyridinoxy, carbazoleoxy, etc.

[0063] In some embodiments, the heteroaryl thiol group having 5 to 60 ring atoms can be selected from heteroaryl thiol groups having 8 to 50 ring atoms, heteroaryl thiol groups having 10 to 40 ring atoms, heteroaryl thiol groups having 20 to 30 ring atoms, etc., specifically thiophene thiol, imidazol thiol, thiazolyl thiol, pyrimidinyl thiol, thiadiazolyl thiol, pyridinoxy, carbazoleoxy, etc.

[0064] In some embodiments, Ar is selected from aryl groups with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl groups with 5 to 30 substituted or unsubstituted ring atoms, arylamino groups with 6 to 30 substituted or unsubstituted ring atoms, aryloxy groups with 6 to 30 substituted or unsubstituted ring atoms, arylthiol groups with 6 to 30 substituted or unsubstituted ring atoms, heteroarylamino groups with 5 to 30 substituted or unsubstituted ring atoms, and other aryl groups with 6 to 30 substituted or unsubstituted ring atoms. One or more of the following: 5 to 30 heteroaryloxy groups, substituted or unsubstituted heteroarylthiol groups having 5 to 30 ring atoms; wherein, in Ar, the substituted substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1 to C10 alkyl, C1 to C10 alkoxy, C1 to C10 alkylthio, aryl group having 6 to 30 ring atoms, aryloxy group having 6 to 30 ring atoms, and arylthio group having 6 to 30 ring atoms.

[0065] In some embodiments, Ar is selected from one or more of aryl groups having 6 to 30 substituted or unsubstituted cyclic atoms, arylamino groups having 6 to 30 substituted or unsubstituted aryloxy groups having 6 to 30 substituted or unsubstituted arylthio groups having 6 to 30 substituted or unsubstituted arylthiol groups having 6 to 30 substituted or unsubstituted arylthiol groups; wherein, in Ar, the substituents include one or more of halogen groups, hydroxyl groups, nitro groups, cyano groups, isocyano groups, silyl groups, C1 to C10 alkyl groups, C1 to C10 alkoxy groups, and C1 to C10 alkylthio groups.

[0066] In some embodiments, Ar is selected from Wherein, n is selected from an integer from 0 to 5, and R is selected from one or more of the following groups: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C10 alkyl, C1-C10 alkoxy, and C1-C10 alkylthio.

[0067] In some embodiments, n is 0, 1, or 2.

[0068] In some embodiments, R is selected from one or more of halogen, C1-C8 alkyl, and C1-C8 alkoxy groups.

[0069] In some embodiments, L is selected from single bonds, substituted or unsubstituted C1-C20 alkylene groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkyne groups, substituted or unsubstituted C2-C10 etheryl groups, substituted or unsubstituted aryl groups, substituted or unsubstituted aryloxy groups, substituted or unsubstituted arylthio groups, and substituted or unsubstituted -(CH2) groups. n1 CO(CH2) n2 -, substituted or unsubstituted -(CH2) n3 NHCO(CH2) n4 -, substituted or unsubstituted -(CH2) n5 CONH(CH2) n6 -, substituted or unsubstituted -(CH2) n7 COO(CH2) n8 - is one or more of the following: n1 to n8 are each independently selected from integers from 1 to 10; in L, the substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C10 alkyl, C1-C10 alkoxy, C1-C10 alkylthio, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, and arylthio with 6 to 30 ring atoms.

[0070] In some embodiments, L is selected from single bonds, substituted or unsubstituted C1-C20 alkylene groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkyne groups, substituted or unsubstituted C2-C10 etheryl groups, and substituted or unsubstituted -(CH2). n1 CO(CH2) n2 -, substituted or unsubstituted -(CH2) n3 NHCO(CH2) n4 -, substituted or unsubstituted -(CH2) n5 CONH(CH2) n6 -, substituted or unsubstituted -(CH2) n7 COO(CH2) n8 - is one or more of the following: n1 to n8 are each independently selected from integers from 1 to 10; in L, the substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1 to C10 alkyl, C1 to C10 alkoxy, and C1 to C10 alkylthio.

[0071] In some embodiments, L is selected from one or more combinations of single bonds, substituted or unsubstituted C1-C8 alkylene groups, substituted or unsubstituted C2-C8 alkenyl groups, and substituted or unsubstituted C2-C8 alkyne groups; wherein, in L, the substituted substituents include one or more of C1-C5 alkyl groups, C1-C5 alkoxy groups, and C1-C5 alkylthio groups.

[0072] In some embodiments, the halogen is selected from F, Cl, Br or I.

[0073] Further, the halogen is selected from Cl, Br, or I. In some embodiments, the passivating agent is selected from aryl halogenated amine salts, including phenyl halogenated amine salts. The phenyl halogenated amine salts include one or more of phenyl bromide amine salts, phenyl iodide amine salts, and phenyl chloride amine salts.

[0074] Furthermore, the phenylammonium bromide salt compound is selected from one or more compounds having the following structural formula:

[0075] (Phenylacetyl bromide, CAS: 53916-94-2) (3-Fluorophenylethylammonium bromide, CAS: 2710237-38-8) (2-Fluorophenylethylammonium bromide, CAS: 2710237-37-7) (4-Bromophenylethylammonium bromide, CAS: 206559-45-7) (4-Methoxyphenylethylammonium bromide, CAS: 2705331-53-7) (3-Methoxyphenylethylammonium bromide, CAS: 60189-29-9) (Benzylmethylammonium bromide, CAS: 37488-40-7) (Phenylacetylammonium bromide, CAS: 120375-53-3) (4-Methylbenzylmethylammonium bromide, CAS: 130191-64-9) (4-tert-butylbenzylmethylammonium bromide, CAS: 663941-83-1) (4-tert-butylphenylammonium bromide, CAS: 1446307-72-7) (4-Fluorobenzylmethylammonium bromide, CAS: 2270172-94-4).

[0076] The phenyl iodide ammonium salt compounds are selected from one or more compounds having the following structural formula:

[0077] (Phenylethylammonium iodide, CAS: 151059-43-7) (4-Bromophenylethyl iodide, CAS: 206559-45-7) (4-Fluorophenylethyl iodide, CAS: 2810129-43-0) (2-Fluorophenylethyl iodide, CAS: 2764625-99-0) (3-Methoxyphenylethyl iodide, CAS: 2760292-10-0) (Benzylbutyl iodide, CAS: 2602663-31-8) (4-Chlorophenylethyl iodide, CAS: 1639014-61-2) (Benzyl iodide, CAS: 45579-91-7) (Phenylacetyl iodide, CAS: 2673196-34-2).

[0078] The phenylamine chloride salt compounds are selected from one or more compounds having the following structural formula:

[0079] (Phenylacetylamine chloride, CAS: 156-28-5) (3-Fluorophenylethylammonium chloride, CAS: 199296-53-2) (2-Fluorophenylethylammonium chloride, CAS: 1553856-85-1) (4-Fluorophenylethylammonium chloride, CAS: 459-19-8).

[0080] In some embodiments, the semiconductor material includes an N-type semiconductor material or a P-type semiconductor material. It is understood that the N-type semiconductor material is a material conventionally used in the art for the electronic functional layer 40, and the P-type semiconductor material is a material conventionally used in the art for the hole functional layer 20. The passivating agent can improve the electron mobility of the N-type semiconductor material and the hole mobility of the P-type semiconductor material.

[0081] Furthermore, the N-type semiconductor material includes N-type inorganic nanoparticles or N-type organic semiconductor materials, and the P-type semiconductor material includes P-type inorganic nanoparticles or P-type organic semiconductor materials.

[0082] In some embodiments, the average particle size of the N-type inorganic nanoparticles is 2 nm to 5 nm, for example, it can be 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, or any range between two values. It should be noted that in this application, the particle size is measured using transmission electron microscopy (TEM).

[0083] In some embodiments, the average particle size of the p-type inorganic nanoparticles is 2 nm to 5 nm, for example, it can be 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, or any range between two values. It should be noted that in this application, the particle size is measured using transmission electron microscopy (TEM).

[0084] In some embodiments, the N-type inorganic nanoparticles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The group IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The group IIIA-VA semiconductor material includes one or more of InP and GaP. The group IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0085] In some embodiments, the N-type organic semiconductor material includes aluminum 8-hydroxyquinoline (Alq3), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), 4,7-diphenyl-1,10-o-diazaphenanthroline (BPhen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (DMBP), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (BT-1,2,4-Tz), bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq2), and 2,2'-(1,3-phenyl)bis[5-( [4-tert-butylphenyl)-1,3,4-oxadiazole] (BTPA), tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane (TM-3PB), tetra[(m-pyridyl)-phenyl-3-yl]biphenyl (m-PyBP), 3,3'-[5'-[3-(3-pyridyl)phenyl][1,1':3',1”-terphenyl]-3,3”-diyl]dipyridine (TPD-Py), 1,3-bis(3,5-dipyridin-3-ylphenyl)benzene (DBP), n,n′-bis(naphthyl-1-yl)-n,n′-bis(phenyl)benzidine (NPB), and diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TPDPS) are among the following.

[0086] In some embodiments, the P-type inorganic nanoparticles include one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide, and a metal nitride. The metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, and V2O5. The doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, and WS3. The metal selenide includes one or more of MoSe3 and WSe3. The metal nitride includes P-type gallium nitride.

[0087] In some embodiments, the p-type organic semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, and N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenyl Benzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzanphenanthrene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] Poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-Tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spiroNPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinone dimethane, doped graphene, undoped graphene.

[0088] In some embodiments, the mass ratio of the N-type inorganic nanoparticles to the passivating agent is (10–30):1, for example, it can be 12:1, 15:1, 18:1, 20:1, 22:1, 25:1, 28:1, or any range between two ratios. Within the range of the mass ratio, it is beneficial for the passivating agent to interact with the N-type inorganic nanoparticles, thereby improving the electron mobility of the N-type inorganic nanoparticles.

[0089] In some embodiments, the mass ratio of the N-type organic semiconductor material to the passivating agent is (10–25):1, for example, it can be 12:1, 15:1, 18:1, 20:1, 22:1, or any range between two ratios. Within the range of such mass ratios, the passivating agent is beneficial in promoting the connection of the N-type organic semiconductor material and improving the electron mobility of the N-type organic semiconductor material.

[0090] In some embodiments, the mass ratio of the p-type inorganic nanoparticles to the passivating agent is (10–45):1, for example, it can be 12:1, 15:1, 18:1, 20:1, 22:1, 25:1, 28:1, 30:1, 32:1, 35:1, 38:1, 40:1, 42:1, or any range between two ratios. Within the range of the mass ratio, it is beneficial for the passivating agent to interact with the p-type inorganic nanoparticles, thereby improving the hole mobility of the p-type inorganic nanoparticles.

[0091] In some embodiments, the mass ratio of the p-type organic semiconductor material to the passivating agent is (10–40):1, for example, it can be 12:1, 15:1, 18:1, 20:1, 22:1, 25:1, 28:1, 30:1, 32:1, 35:1, 38:1, or any range between two ratios. Within the range of the mass ratio, the passivating agent is beneficial in promoting the crosslinking of the p-type organic semiconductor material and improving the hole mobility of the p-type organic semiconductor material.

[0092] In some embodiments, the semiconductor material and the passivating agent are connected by chemical bonds in the composite material. Further, the chemical bonds include one or more of covalent bonds and hydrogen bonds.

[0093] Specifically, when the semiconductor material is the N-type inorganic nanoparticle or the P-type inorganic nanoparticle, the semiconductor material includes metallic and non-metallic elements, and the non-metallic elements in the semiconductor material are covalently connected to the -X in the passivating agent.

[0094] When the semiconductor material is an N-type or P-type organic semiconductor material, the semiconductor material and the passivating agent are connected by hydrogen bonds. Specifically, -NH2 and HX in the passivating agent are bonded to the organic semiconductor material via hydrogen bonds. The P-type organic semiconductor material can further bond with each other through these hydrogen bonds, thereby promoting cross-linking of the P-type organic semiconductor material.

[0095] The composite material can be obtained by mixing and reacting the semiconductor material and the passivating agent using conventional methods.

[0096] Secondly, embodiments of this application also provide a thin film, the material of which includes the aforementioned composite material.

[0097] Modifying semiconductor materials with passivating agents can improve the density of the thin film, reduce its surface roughness, and improve its quality.

[0098] In some embodiments, when the semiconductor material is N-type inorganic nanoparticles:

[0099] The thickness of the thin film is 20nm to 30nm, for example, it can be 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm, or any range between two values. It should be noted that in this application, the thickness of the thin film is measured using a step tester.

[0100] The surface roughness of the thin film is 2nm to 4nm, for example, it can be 2.1nm, 2.2nm, 2.3nm, 2.4nm, 2.5nm, 2.6nm, 2.7nm, 2.8nm, 2.9nm, 3nm, 3.1nm, 3.2nm, 3.3nm, 3.4nm, 3.5nm, 3.6nm, 3.7nm, 3.8nm, 3.9nm, or any range between two values. It should be noted that in this application, the surface roughness of the thin film is measured using atomic force microscopy (AFM).

[0101] In some embodiments, when the semiconductor material is an N-type organic semiconductor material:

[0102] The thickness of the film is 20nm to 30nm, for example, it can be 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm or any range between two values.

[0103] The surface roughness of the thin film is 1nm to 3nm, for example, it can be 1.1nm, 1.2nm, 1.3nm, 1.4nm, 1.5nm, 1.6nm, 1.7nm, 1.8nm, 1.9nm, 2nm, 2.1nm, 2.2nm, 2.3nm, 2.4nm, 2.5nm, 2.6nm, 2.7nm, 2.8nm, 2.9nm or any range between two values.

[0104] In some embodiments, when the semiconductor material is a p-type inorganic nanoparticle:

[0105] The thickness of the film is 25nm to 40nm, for example, it can be 26nm, 28nm, 30nm, 32nm, 34nm, 36nm, 38nm or any range between two values.

[0106] The surface roughness of the thin film is 1.5nm to 3.5nm, for example, it can be 1.6nm, 1.7nm, 1.8nm, 1.9nm, 2nm, 2.1nm, 2.2nm, 2.3nm, 2.4nm, 2.5nm, 2.6nm, 2.7nm, 2.8nm, 2.9nm, 3nm, 3.1nm, 3.2nm, 3.3nm, 3.4nm or any range between two values.

[0107] In some embodiments, when the semiconductor material is a p-type organic semiconductor material:

[0108] The thickness of the film is 20nm to 30nm, for example, it can be 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm or any range between two values.

[0109] The surface roughness of the thin film is 1nm to 3nm, for example, it can be 1.1nm, 1.2nm, 1.3nm, 1.4nm, 1.5nm, 1.6nm, 1.7nm, 1.8nm, 1.9nm, 2nm, 2.1nm, 2.2nm, 2.3nm, 2.4nm, 2.5nm, 2.6nm, 2.7nm, 2.8nm, 2.9nm or any range between two values.

[0110] Thirdly, please refer to Figure 1 This application also provides a method for preparing a thin film, comprising the following steps:

[0111] S11. Provide the above-mentioned composite material;

[0112] S12. Deposit the composite material to obtain a thin film.

[0113] It is understood that the thin film can be prepared using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0114] For example, when the method for preparing the thin film is a solution method, it includes:

[0115] A composite material dispersion is provided, the composite material dispersion comprising the composite material and a solvent;

[0116] The composite material dispersion is deposited to obtain a thin film.

[0117] In some embodiments, when the semiconductor material in the composite material is N-type inorganic nanoparticles or P-type inorganic nanoparticles, the solvent is selected from one or more of trimethoxybutanol, ethanol, propanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0118] In some embodiments, when the semiconductor material in the composite material is an N-type organic semiconductor material or a P-type organic semiconductor material, the solvent is selected from one or more of chlorobenzene, chloroform, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, toluene, and dichloromethane.

[0119] In some embodiments, the mass concentration of the composite material in the composite material dispersion is 20 mg / mL to 30 mg / mL, for example, it can be 21 mg / mL, 22 mg / mL, 23 mg / mL, 24 mg / mL, 25 mg / mL, 26 mg / mL, 27 mg / mL, 28 mg / mL, 29 mg / mL or any range between two values.

[0120] In some embodiments, after depositing the composite material, an annealing treatment is further included. Further, the annealing temperature is 80°C to 120°C, for example, it can be 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, or any range between two values; the annealing time is 10 min to 30 min, for example, it can be 12 min, 15 min, 18 min, 20 min, 22 min, 25 min, 28 min, or any range between two values. Under the conditions of the annealing treatment, it is beneficial to remove solvent, improve the film-forming properties, and reduce film defects.

[0121] Fourthly, please refer to Figure 2 , Figure 3 , Figure 4 and Figure 5 This application also provides an optoelectronic device 100, comprising an anode 10, an active layer 30, and a cathode 50 stacked together; wherein,

[0122] The optoelectronic device 100 further includes a hole functional layer 20, which is located between the anode 10 and the active layer 30. The material of the hole functional layer 20 includes a first passivating agent, which is the passivating agent described above; and / or

[0123] The optoelectronic device 100 further includes an electronic functional layer 40, which is located between the active layer 30 and the cathode 50. The material of the electronic functional layer 40 includes a second passivating agent, which is the passivating agent described above; and / or

[0124] The optoelectronic device 100 further includes an electronic functional layer 40 and a passivation layer 60. The electronic functional layer 40 is located between the active layer 30 and the passivation layer 60, and the passivation layer 60 is located between the electronic functional layer 40 and the cathode 50. The material of the passivation layer 60 includes a third passivating agent, which is the passivating agent described above.

[0125] The optoelectronic device 100 provided in this application uses a composite material to improve the carrier mobility of the semiconductor material, thereby promoting the recombination efficiency of holes and electrons in the optoelectronic device 100. In addition, the passivating agent in the composite material can improve the interfacial contact between the active layer 30 and the carrier functional layer, reduce exciton accumulation, and reduce interface defects. The passivation layer 60 can improve the interfacial defects between the electronic functional layer 40 and the cathode 50, enhance the stability of the optoelectronic device 100, improve the brightness and photoelectric efficiency of the optoelectronic device 100, and extend the service life of the optoelectronic device 100.

[0126] The electronic functional layer 40 includes one or more of an electron injection layer and an electron transport layer.

[0127] The hole functional layer 20 includes one or more of a hole injection layer and a hole transport layer.

[0128] The hole functional layer also includes a first P-type semiconductor material, which includes the aforementioned P-type semiconductor material.

[0129] The material of the electronic functional layer also includes a first N-type semiconductor material, which includes the aforementioned N-type semiconductor material.

[0130] In some embodiments, the first N-type semiconductor material and the third passivating agent are covalently bonded between the interface of the passivation layer 60 and the electronic functional layer 40.

[0131] The material of the third passivating agent can be the same as that of the passivating agent in the first aspect, and will not be described again here.

[0132] In some embodiments, the thickness of the passivation layer 60 is 1 nm to 5 nm, for example, it can be 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm or any range between two values.

[0133] The passivation layer 60 can be prepared using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating.

[0134] The first passivating agent, the second passivating agent, and the third passivating agent may be made of the same or different materials.

[0135] The active layer 30 includes a light-emitting layer, and the material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dot materials.

[0136] The organic light-emitting material may be selected from, but is not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)]), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III)]), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, and Exciplex (excitoplex) light-emitting materials.

[0137] The quantum dot material may be selected from, but is not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots.

[0138] The materials for the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots can be selected from, but are not limited to, one or more compounds from group II-VI, group IV-VI, group III-V, and group I-III-VI. The shell of the core-shell quantum dots may consist of one or more layers. The group II-VI compounds may be selected from, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may be selected from, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may be selected from, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may be selected from, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0139] As an example, the core-shell structured quantum dots can be selected from, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the above descriptions of CdSe / ZnS, etc., the " / " indicates that the material after the " / " (as the shell) covers the material before the " / " (as the core).

[0140] The materials used for the perovskite quantum dots can be selected from, but are not limited to, doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX'3, where A is Cs. + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2 + Yb 2+ Eu 2+ One or more of the following, where X' is a halide anion selected from Cl... - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX'3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2 + Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X' is a halide anion selected from Cl... -,Br - I - One or more of them.

[0141] In some embodiments, the materials of the anode 10 and the cathode 50 respectively include one or more of metals, carbon materials, and metal oxides; the metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxides include metal oxide electrodes or composite electrodes in which metals are disposed between doped or undoped transparent metal oxides, the materials of the metal oxide electrodes include one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. In this context, " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode consisting of sequentially stacked AZO, Ag, and AZO layers.

[0142] Fifthly, this application also provides a display device, which includes the above-described optoelectronic device 100.

[0143] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0144] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0145] Example 1

[0146] This embodiment provides a composite material and a thin film prepared therefrom, the preparation method of which is as follows:

[0147] N-type inorganic nanoparticles ZnO, passivating agent phenylethyl ammonium bromide, and ethanol were mixed. ZnO and phenylethyl ammonium bromide reacted to generate a composite material, and a composite material dispersion was prepared. The mass ratio of ZnO to phenylethyl ammonium bromide was 20:1, and the mass concentration of the composite material in the composite material dispersion was 25 mg / mL.

[0148] The composite material dispersion was spin-coated onto a glass substrate and annealed at 100°C for 15 min to obtain a thin film with a thickness of 30 nm.

[0149] Example 2

[0150] This embodiment is basically the same as Embodiment 1, except that phenylethyl bromide is replaced with 3-methoxyphenylethyl bromide in this embodiment.

[0151] Example 3

[0152] This embodiment is basically the same as Embodiment 1, except that phenylethyl ammonium bromide is replaced with 4-chlorophenylethyl ammonium iodide in this embodiment.

[0153] Example 4

[0154] This embodiment is basically the same as Embodiment 1, except that phenylethylammonium bromide is replaced with 2-fluorophenylethylammonium chloride in this embodiment.

[0155] Example 5

[0156] This embodiment is basically the same as Embodiment 1, except that the mass ratio of ZnO to phenylethylammonium bromide is 30:1 in this embodiment.

[0157] Example 6

[0158] This embodiment is basically the same as Embodiment 1, except that the mass ratio of ZnO to phenylethylammonium bromide is 10:1 in this embodiment.

[0159] Example 7

[0160] This embodiment is basically the same as Embodiment 1, except that the N-type inorganic nanoparticles ZnO are replaced with ZnMgO (magnesium-doped zinc oxide) in this embodiment.

[0161] Example 8

[0162] This embodiment is basically the same as Embodiment 1, except that the N-type inorganic nanoparticles ZnO are replaced with TiO2 in this embodiment.

[0163] Example 9

[0164] This embodiment is basically the same as Embodiment 1, except that the N-type inorganic nanoparticles ZnO are replaced with the N-type organic semiconductor material n,n′-bis(naphthyl-1-yl)-n,n′-bis(phenyl)benzidine (NPB), wherein the mass ratio of NPB to phenylethylamine bromide is 15:1.

[0165] Example 10

[0166] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the N-type inorganic nanoparticles ZnO are replaced with P-type inorganic nanoparticles NiO, wherein the mass ratio of NiO to phenylethylamine bromide is 30:1.

[0167] Example 11

[0168] This embodiment is basically the same as that of Embodiment 10, except that phenylethyl ammonium bromide is replaced with 4-tert-butylphenylmethyl ammonium bromide in this embodiment.

[0169] Example 12

[0170] This embodiment is basically the same as that of Embodiment 10, except that phenylethylammonium bromide is replaced with phenylbutylammonium iodide in this embodiment.

[0171] Example 13

[0172] This embodiment is basically the same as that of Embodiment 10, except that phenylethyl ammonium bromide is replaced with phenylethyl ammonium chloride in this embodiment.

[0173] Example 14

[0174] This embodiment is basically the same as that of Embodiment 10, except that the mass ratio of NiO to phenylethylamine bromide is 45:1 in this embodiment.

[0175] Example 15

[0176] This embodiment is basically the same as that of Embodiment 10, except that the mass ratio of NiO to phenylethylamine bromide is 10:1 in this embodiment.

[0177] Example 16

[0178] This embodiment is basically the same as Embodiment 10, except that in this embodiment, the p-type inorganic nanoparticles NiO are replaced with NiMoO (molybdenum-doped nickel oxide).

[0179] Example 17

[0180] This embodiment is basically the same as Embodiment 10, except that in this embodiment, the P-type inorganic nanoparticles NiO are replaced with CuO.

[0181] Example 18

[0182] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the N-type inorganic nanoparticles ZnO are replaced with the organic P-type semiconductor material TFB, wherein the mass ratio of TFB to phenylethylamine bromide is 25:1.

[0183] Example 19

[0184] This embodiment is basically the same as embodiment 17, except that the P-type organic semiconductor material TFB is replaced with CBP in this embodiment.

[0185] Example 20

[0186] This embodiment is basically the same as that of Embodiment 17, except that the mass ratio of TFB to phenylethylammonium bromide is 40:1 in this embodiment.

[0187] Example 21

[0188] This embodiment is basically the same as that of Embodiment 17, except that the mass ratio of TFB to phenylethylammonium bromide is 10:1 in this embodiment.

[0189] Comparative Example 1

[0190] This comparative example is basically the same as Example 1, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0191] Comparative Example 2

[0192] This comparative example is basically the same as Example 7, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0193] Comparative Example 3

[0194] This comparative example is basically the same as Example 8, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0195] Comparative Example 4

[0196] This comparative example is basically the same as Example 9, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0197] Comparative Example 5

[0198] This comparative example is basically the same as Example 10, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0199] Comparative Example 6

[0200] This comparative example is basically the same as Example 16, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0201] Comparative Example 7

[0202] This comparative example is basically the same as Example 17, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0203] Comparative Example 8

[0204] This comparative example is basically the same as Example 18, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0205] Comparative Example 9

[0206] This comparative example is basically the same as Example 19, except that the composite material in this comparative example does not contain the passivating agent phenylethylamine bromide.

[0207] Electron mobility and surface roughness were tested on the thin films of Examples 1-9 and Comparative Examples 1-4, and the test results are shown in Table 1. Hole mobility and surface roughness were tested on the thin films of Examples 10-21 and Comparative Examples 5-9, and the test results are shown in Table 2.

[0208] The method for detecting carrier mobility (electron mobility and hole mobility) is as follows: The current density-voltage curves of the optoelectronic devices (single carrier transport thin film devices HOD / EOD) of Examples 1-21 and Comparative Examples 1-9 are tested. The structure of EOD is anode / quantum dot emitting layer / electron transport layer / cathode, and the structure of HOD is anode / hole transport thin film / quantum dot emitting layer / cathode. The electron transport layer is the thin film of Examples 1-9 and Comparative Examples 1-4, and the hole transport layer is the thin film of Examples 10-21 and Comparative Examples 5-9. The space charge confinement current (SCLC) region in the current density-voltage curve is obtained, and then the value is calculated according to the formula J = (9 / 8)ε. r ε0μ e V 2 / d 3 Calculate the electron / hole mobility, where J represents the current density in mA / cm². -2 ;ε r ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Electron / hole mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, with units of V; d represents the film thickness, with units of m.

[0209] Surface roughness was measured using atomic force microscopy (AFM).

[0210] Table 1

[0211]

[0212] As shown in Table 1:

[0213] As can be seen from Examples 1-9 and Comparative Examples 1-4, modifying N-type inorganic nanoparticles or N-type organic semiconductor materials with the passivating agent provided in this application can effectively improve the defects of passivated N-type inorganic nanoparticles, promote the connection of N-type organic semiconductor materials, thereby improving the electron mobility of N-type semiconductor materials. In addition, the passivating agent also improves the film-forming properties of the film, promotes the close and uniform arrangement of composite materials, and reduces the surface roughness of the film.

[0214] Table 2

[0215]

[0216]

[0217] As shown in Table 2:

[0218] As can be seen from Examples 10-17 and Comparative Examples 5-7, the passivating agent modification of P-type inorganic nanoparticles can reduce the defects of P-type inorganic nanoparticles. The synergistic effect of the passivating agent's -Ar, -NH2 and -X improves the hole mobility of P-type inorganic nanoparticles and reduces the surface roughness of the film, thereby improving the continuous conductivity of the film and making it more conducive to hole transport.

[0219] As can be seen from Examples 18-21 and Comparative Examples 8-9, the passivating agent modification of P-type organic nanoparticles significantly improved the hole mobility of P-type organic nanoparticles and reduced the surface roughness of the film. This is because the hydrogen bonds formed between the passivating agent and the P-type organic nanoparticles promoted further bonding and cross-linking between the P-type organic nanoparticles, effectively improving the performance of the P-type organic nanoparticles.

[0220] Device Example 1

[0221] This embodiment provides an optoelectronic device, the fabrication method of which is as follows:

[0222] The patterned ITO glass substrate was ultrasonically cleaned in acetone, cleaning solution, deionized water and isopropanol in sequence, then dried with a nitrogen gun and irradiated with ultraviolet light for 15 minutes to obtain the anode with a thickness of 100 nm.

[0223] A thin film was prepared on the anode surface according to Comparative Example 5 to form a hole transport layer;

[0224] An octane dispersion of CdSe / ZnS was provided, spin-coated onto a hole transport layer, and annealed at 100°C for 5 min to form a luminescent layer.

[0225] A thin film was prepared on the surface of the light-emitting layer as described in Example 1 to form an electron transport layer;

[0226] Place it in a vacuum chamber and set the vacuum level to no higher than 3 x 10⁻⁶. -4Pa, with a deposition rate of 1 angstrom / second, deposits a 20 nm thick Ag layer on the surface of the electron transport layer as the cathode;

[0227] Optoelectronic devices are obtained by encapsulating with epoxy resin.

[0228] Device Examples 2-9

[0229] Device Examples 2-9 are basically the same as Device Example 1, except that thin films are prepared in Device Examples 2-9 respectively to form electron transport layers.

[0230] Device Example 10

[0231] Device Example 10 is basically the same as Device Example 1, except that in Device Example 10, a thin film is prepared with reference to Comparative Example 1 to form an electron transport layer; and a thin film is prepared with reference to Example 10 to form a hole transport layer.

[0232] Device Examples 11-17

[0233] Device Examples 11-17 are basically the same as Device Example 10, except that thin films are prepared in Device Examples 11-17 respectively to form hole transport layers.

[0234] Device Examples 18-21

[0235] Device Examples 18-21 are basically the same as Device Example 10, except that thin films are prepared in Device Examples 18-21 respectively to form hole transport layers.

[0236] Device Example 22

[0237] Device Example 22 is basically the same as Device Example 1, except that in Device Example 22, a thin film is prepared in accordance with Example 10 to form a hole transport layer.

[0238] Device Example 23

[0239] Device Example 23 is basically the same as Device Example 1, except that in Device Example 23, a thin film is prepared in accordance with Example 18 to form a hole transport layer.

[0240] Device Example 24

[0241] Device Example 24 is basically the same as Device Example 1, except that in Device Example 24, a thin film is prepared according to Comparative Example 1 to form an electron transport layer; after forming the electron transport layer, the following steps are also taken: prepare an ethanol dispersion of 8 mg / mL phenylethyl ammonium bromide, spin-coat it on the electron transport surface at a speed of 4000 rpm, heat and anneal at 120°C for 20 min to form a passivation layer, and then form a cathode on the passivation layer.

[0242] Device Example 25

[0243] Device Example 25 is basically the same as Device Example 22, except that after forming the electron transport layer in Device Example 25, it further includes: preparing an ethanol dispersion of 8 mg / mL phenylethyl ammonium bromide, spin-coating it onto the electron transport surface at a speed of 4000 rpm, heating and annealing it at 120°C for 20 min to form a passivation layer, and then forming a cathode on the passivation layer.

[0244] Device Example 26

[0245] Device Example 26 is basically the same as Device Example 23, except that after forming the electron transport layer in Device Example 26, it further includes: preparing an ethanol dispersion of 8 mg / mL phenylethyl ammonium bromide, spin-coating it onto the electron transport surface at a speed of 4000 rpm, heating and annealing it at 120°C for 20 min to form a passivation layer, and then forming a cathode on the passivation layer.

[0246] Device Comparison Example 1

[0247] Device Comparative Example 1 is basically the same as Device Example 1, except that a thin film is prepared in Device Comparative Example 1 to form an electron transport layer.

[0248] Device Comparison Example 2

[0249] Device Comparative Example 2 is basically the same as Device Comparative Example 1, except that in Device Comparative Example 2, a thin film is prepared to form an electron transport layer, while in Device Comparative Example 6, a thin film is prepared to form a hole transport layer.

[0250] Device Comparison Example 3

[0251] Device Comparative Example 3 is basically the same as Device Comparative Example 1, except that in Device Comparative Example 3, a thin film is prepared to form an electron transport layer, while in Device Comparative Example 7, a thin film is prepared to form a hole transport layer.

[0252] Device Comparison Example 4

[0253] Device Comparative Example 4 is basically the same as Device Comparative Example 1, except that in Device Comparative Example 4, a thin film is prepared to form an electron transport layer.

[0254] Device Comparison Example 5

[0255] Device Comparative Example 5 is basically the same as Device Comparative Example 1, except that in Device Comparative Example 5, a thin film is prepared in accordance with Comparative Example 8 to form a hole transport layer.

[0256] Device Comparison Example 6

[0257] Device Comparative Example 6 is basically the same as Device Comparative Example 1, except that in Device Comparative Example 6, a thin film is prepared in accordance with Comparative Example 9 to form a hole transport layer.

[0258] Brightness L, current efficiency CE, and lifetime T95 and T95@1000nit were tested on the optoelectronic devices of Device Examples 1 to 26 and Device Comparative Examples 1 to 6 respectively. The test results are shown in Table 3.

[0259] The brightness and current efficiency were obtained through testing and calculation using a Keithley 2400 high-precision digital source meter, an Ocean OpticUSB2000+ spectrometer, and an LS-160 luminance meter.

[0260] The test methods for lifespan T95 and T95@1000nit are as follows:

[0261] The time required for a device's brightness to decrease to a certain percentage of its maximum brightness under constant current or voltage drive, defined as T95, is the time it takes for the brightness to drop to 95% of its maximum brightness. This lifetime is the measured lifetime. To shorten the testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at high brightness is obtained by fitting an extended exponential decay brightness decay formula. For example, the lifetime at 1000 nits is measured as T95@1000nits. The specific calculation formula is as follows:

[0262]

[0263] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor. In this experiment, the lifetime of several groups of QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0264] Table 3

[0265]

[0266]

[0267]

[0268] As shown in Table 3:

[0269] As can be seen from Device Examples 1-9 and Device Comparative Examples 1-4, after the passivating agent improves the performance of the N-type semiconductor material, it is applied to the electron transport layer of the optoelectronic device, which promotes electron transport and reduces the fluorescence quenching of the light-emitting layer by the N-type semiconductor material, thereby improving the brightness, current efficiency and service life of the optoelectronic device.

[0270] As can be seen from device examples 10-17 and device comparative examples 1-4, after the passivating agent improves the defects of P-type inorganic nanoparticles, it is applied to the hole transport layer of optoelectronic devices, which promotes hole transport and facilitates the effective recombination of holes and electrons in the light-emitting layer, thereby improving the brightness and current efficiency of optoelectronic devices and extending the service life of optoelectronic devices.

[0271] As can be seen from device examples 18-21 and device comparative examples 5-6, the passivating agent promotes the cross-linking of the P-type organic semiconductor material, promotes hole transport, thereby promoting the effective recombination of holes and electrons in the light-emitting layer, which in turn improves the brightness and current efficiency of the optoelectronic device and extends the service life of the optoelectronic device.

[0272] As can be seen from Device Examples 22-26 and Device Comparative Examples 1-6, in Device Examples 22-23, both the hole transport layer and the electron transport layer are made of composite materials containing passivating agents. Compared with only the hole transport layer or only the electron transport layer using composite materials containing passivating agents, the performance improvement effect on optoelectronic devices is more significant. In Device Examples 25-26, passivating agents are introduced into the electron transport layer and / or the hole transport layer, and a passivation layer formed by passivating agents is set separately between the electron transport layer and the cathode. The passivation layer can improve the interfacial contact between the electron transport layer and the cathode, further promote electron transport, and improve the performance of optoelectronic devices.

[0273] In summary, this application utilizes passivating agents to modify N-type inorganic nanoparticles, N-type organic semiconductor materials, P-type inorganic nanoparticles, or P-type organic semiconductor materials, which are then applied to the electronic functional layer or hole transport layer of optoelectronic devices. This can effectively improve the brightness and current efficiency of optoelectronic devices, extend their service life, and enhance their overall performance.

[0274] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composite material, characterized by, comprising a semiconductor material and a passivating agent having a structure according to the following formula: wherein X is selected from halogen; Ar is selected from one or more of substituted or unsubstituted aryl having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl having 5 to 60 ring atoms, substituted or unsubstituted arylamino having 6 to 60 ring atoms, substituted or unsubstituted aryloxy having 6 to 60 ring atoms, substituted or unsubstituted arylmercapto having 6 to 60 ring atoms, substituted or unsubstituted heteroarylamino having 5 to 60 ring atoms, substituted or unsubstituted heteroaryloxy having 5 to 60 ring atoms, substituted or unsubstituted heteroarylmercapto having 5 to 60 ring atoms; wherein, in Ar, the substituents include one or more of halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C20 alkyl, C1-C20 alkoxy, C1-C20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms; L is selected from one or more combinations of a single bond, substituted or unsubstituted C1-C40 alkylene, substituted or unsubstituted C2-C40 alkenylene, substituted or unsubstituted C2-C40 alkynylene, substituted or unsubstituted C2-C20 etherylene, substituted or unsubstituted arylene, substituted or unsubstituted aryloxyylene, substituted or unsubstituted arylthioylene, substituted or unsubstituted -(CH2) n1 CO(CH2) n2 -, substituted or unsubstituted -(CH2) n3 NHCO(CH2) n4 -, substituted or unsubstituted -(CH2) n5 CONH(CH2) n6 -, substituted or unsubstituted -(CH2) n7 COO(CH2) n8 - ; wherein each of n1 to n8 is independently selected from an integer of 1 to 20, and in L, the substituted substituent includes one or more of a halogen group, a hydroxyl group, a nitro group, a cyano group, an isocyano group, a silane group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C1-C20 alkylthio group, an aryl group having 6 to 60 ring atoms, an aryloxy group having 6 to 60 ring atoms, and an arylthio group having 6 to 60 ring atoms.

2. The composite material of claim 1, wherein the halogen is selected from F, Cl, Br, or I; and / or Ar is selected from one or more of substituted or unsubstituted aryl having 6 to 30 ring atoms, substituted or unsubstituted heteroaryl having 5 to 30 ring atoms, substituted or unsubstituted arylamino having 6 to 30 ring atoms, substituted or unsubstituted aryloxy having 6 to 30 ring atoms, substituted or unsubstituted arylmercapto having 6 to 30 ring atoms, substituted or unsubstituted heteroarylamino having 5 to 30 ring atoms, substituted or unsubstituted heteroaryloxy having 5 to 30 ring atoms, substituted or unsubstituted heteroarylmercapto having 5 to 30 ring atoms; wherein, in Ar, the substituents include one or more of halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C10 alkyl, C1-C10 alkoxy, C1-C10 alkylthio, aryl having 6 to 30 ring atoms, aryloxy having 6 to 30 ring atoms, arylthio having 6 to 30 ring atoms; and / or L is selected from one or more combinations of a single bond, substituted or unsubstituted C1-C20 alkylene, substituted or unsubstituted C2-C20 alkenylene, substituted or unsubstituted C2-C20 alkynylene, substituted or unsubstituted C2-C10 etherylene, substituted or unsubstituted arylene, substituted or unsubstituted aryloxyylene, substituted or unsubstituted arylthioylene, substituted or unsubstituted -(CH2) n1 CO(CH2) n2 -, substituted or unsubstituted -(CH2) n3 NHCO(CH2) n4 -, substituted or unsubstituted -(CH2) n5 CONH(CH2) n6 -, substituted or unsubstituted -(CH2) n7 COO(CH2) n8 - ; wherein each of n1 to n8 is independently selected from an integer of 1 to 10, and in L, the substituted substituent includes one or more of a halogen group, a hydroxyl group, a nitro group, a cyano group, an isocyano group, a silane group, a C1-C10 alkyl group, a C1-C10 alkoxy group, a C1-C10 alkylthio group, an aryl group having 6 to 30 ring atoms, an aryloxy group having 6 to 30 ring atoms, and an arylthio group having 6 to 30 ring atoms.

3. The composite material of claim 2, wherein the halogen is selected from Cl, Br, or I; and / or Ar is selected from one or more of substituted or unsubstituted aryl having 6 to 30 ring atoms, substituted or unsubstituted arylamino having 6 to 30 ring atoms, substituted or unsubstituted aryloxy having 6 to 30 ring atoms, substituted or unsubstituted arylmercapto having 6 to 30 ring atoms; wherein, in Ar, the substituents include one or more of halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C10 alkyl, C1-C10 alkoxy, C1-C10 alkylthio; and / or L is selected from one or more combinations of a single bond, substituted or unsubstituted C1-C20 alkylene, substituted or unsubstituted C2-C20 alkenylene, substituted or unsubstituted C2-C20 alkynylene, substituted or unsubstituted C2-C10 ether group, substituted or unsubstituted -(CH2) n1 CO(CH2) n2 -, substituted or unsubstituted -(CH2) n3 NHCO(CH2) n4 -, substituted or unsubstituted -(CH2) n5 CONH(CH2) n6 -, substituted or unsubstituted -(CH2) n7 COO(CH2) n8 - ; wherein each of n1 to n8 is independently selected from an integer of 1 to 10, and in L, the substituted substituent includes one or more of a halogen group, a hydroxyl group, a nitro group, a cyano group, an isocyano group, a silane group, a C1-C10 alkyl group, a C1-C10 alkoxy group, and a C1-C10 alkylthio group.

4. The composite material of claim 3, wherein Ar is selected from wherein n is selected from an integer from 0 to 5, and R is selected from one or more of a halide, a hydroxyl, a nitro, a cyano, an isocyano, a silyl, a Ci to Cio alkyl, a Ci to Cio alkoxy, a Ci to Cio alkylthio; and / or L is selected from one or a combination of two or more of a single bond, substituted or unsubstituted C1-C8 alkylene, substituted or unsubstituted C2-C8 alkenylene, substituted or unsubstituted C2-C8 alkynylene; wherein, in L, the substituents include one or more of C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio.

5. The composite material according to any one of claims 1 to 4, wherein The passivation agent is selected from aryl halide amine salt compounds, the aryl halide amine salt compounds including phenyl halide amine salt compounds, the phenyl halide amine salt compounds including one or more of phenyl bromide amine salt compounds, phenyl iodide amine salt compounds, phenyl chloride amine salt compounds; Optionally, the phenyl bromide amine salt compounds are selected from one or more of compounds having the following structural formula: Optionally, the phenyl iodide amine salt compounds are selected from one or more of compounds having the following structural formula: Optionally, the phenyl chloride amine salt compounds are selected from one or more of compounds having the following structural formula:

6. The composite material of claim 1, wherein, The semiconductor material includes an N-type semiconductor material or a P-type semiconductor material, the N-type semiconductor material including N-type inorganic nanoparticles or N-type organic semiconductor material, the P-type semiconductor material including P-type inorganic nanoparticles or P-type organic semiconductor material; and / or The semiconductor material and the passivation agent in the composite material are connected by a chemical bond, the chemical bond including one or more of a covalent bond, a hydrogen bond.

7. The composite material of claim 6, wherein, The mass ratio of the N-type inorganic nanoparticles to the passivation agent is (10-30): 1; and / or The mass ratio of the N-type organic semiconductor material to the passivation agent is (10-25): 1; and / or The mass ratio of the P-type inorganic nanoparticles to the passivation agent is (10-45): 1; and / or The mass ratio of the P-type organic semiconductor material to the passivation agent is (10-40): 1; and / or The N-type inorganic nanoparticles and the passivation agent are connected by the covalent bond; and / or The N-type organic semiconductor material and the passivation agent are connected by the hydrogen bond; and / or The P-type inorganic nanoparticles and the passivation agent are connected by the covalent bond; and / or The P-type organic semiconductor material and the passivation agent are connected by the hydrogen bond; and / or The average particle size of the N-type inorganic nanoparticles is 2-5 nm; and / or The average particle size of the P-type inorganic nanoparticles is 2-5 nm; and / or The N-type inorganic nanoparticles include one or more of a first doped metal oxide particle, a first non-doped metal oxide particle, a Group IIB-VIA semiconductor material, a Group IIIA-VA semiconductor material, and a Group IB-IIIA-VIA semiconductor material, the first non-doped metal oxide particle material includes one or more of ZnO, Ti02, Sn02, Zr02, Ta205, the metal oxide in the first doped metal oxide particle includes one or more of ZnO, Ti02, Sn02, Zr02, Ta205, AI2O3, the doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the Group IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, CdS, the Group IIIA-VA semiconductor material includes one or more of InP, GaP, and the Group IB-IIIA-VIA semiconductor material includes one or more of CuInS, CuGaS; and / or The N-type organic semiconductor material includes one or more of 8-hydroxyquinoline aluminum, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, 2,2'-(1,3-phenyl)di[5-(4-tert-butylphenyl)-1,3,4-oxadiazole], tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, tetrakis(m-pyridyl)-phen-3-yl)biphenyl, 3,3'-[5'-[3-(3-pyridyl)phenyl][1,1':3',1"-terphenyl]-3,3"-diyl]dipyridine, 1,3-bis(3,5-dipyrid-3-ylphenyl)benzene, n,n'-bis(naphthalen-1-yl)-n,n'-bis(phenyl)benzidine, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, and / or The P-type inorganic nanoparticles include one or more of second doped metal oxide particles, second non-doped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles each independently include one or more of M0O3, WO3, NiO, CrO3, CuO, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include one or more of CuS, M0S3, WS3, the metal selenides include one or more of M0Se3, WSe3, and the metal nitrides include P-type gallium nitride; and / or The P-type organic semiconductor materials include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(l-naphthyl)-l,l'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(l,l'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-di(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)- triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light emitting material, 2,3,6,7,10,11-hexacyano-l,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-buty lphenyl)diphenylamine)], poly(4-butylphenyl-diphenylamine), poly[bi s(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-l,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-l,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-l,l'-biphenyl compound, N,N,N',N'-tetraarylbiphenylamine, PEDOT, PEDOT:PSS and derivatives thereof, derivatives of PEDOT:PSS doped with s-MoO3, poly(N-vinylcarbazole) and derivatives thereof, polymethacrylate and derivatives thereof, poly(9,9-octylfluorene) and derivatives thereof, poly(spirofluorene) and derivatives thereof, N,N'-di(naphthalen-l-yl)-N,N'-diphenylbenzidine, spiro NPB, nanopolycrystalline diamond, microcrystalline cellulose, and tetracyanoquinodimethane, doped graphene, non-doped graphene.

8. A film, characterized by, The material of the thin film comprises the composite material according to any one of claims 1-7.

9. The film of claim 8, wherein The semiconductor material comprises an N-type semiconductor material or a P-type semiconductor material, the N-type semiconductor material comprises N-type inorganic nanoparticles or N-type organic semiconductor material, and the P-type semiconductor material comprises P-type inorganic nanoparticles or P-type organic semiconductor material; When the semiconductor material is N-type inorganic nanoparticles, the thickness of the thin film is 20-30 nm, and / or the surface roughness of the thin film is 2-4 nm; When the semiconductor material is N-type organic semiconductor material, the thickness of the thin film is 20-30 nm, and / or the surface roughness of the thin film is 1-3 nm; When the semiconductor material is P-type inorganic nanoparticles, the thickness of the thin film is 25-40 nm, and / or the surface roughness of the thin film is 1.5-3.5 nm; When the semiconductor material is P-type organic semiconductor material, the thickness of the thin film is 20-30 nm, and / or the surface roughness of the thin film is 1-3 nm.

10. A method of producing a film, characterized by, The method comprises the following steps: providing the composite material according to any one of claims 1-7; depositing the composite material to obtain a thin film.

11. The production method according to claim 10, wherein The deposition of the composite material comprises: providing a composite material dispersion liquid comprising the composite material and a solvent; and depositing the composite material dispersion liquid to obtain a thin film. Optionally, when the semiconductor material in the composite material is N-type inorganic nanoparticles or P-type inorganic nanoparticles, the solvent is selected from one or more of ethanol, propanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, phenylacetone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol. Optionally, when the semiconductor material in the composite material is N-type organic semiconductor material or P-type organic semiconductor material, the solvent is selected from one or more of chlorobenzene, chloroform, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, toluene, and dichloromethane. Optionally, in the composite material dispersion liquid, the mass concentration of the composite material is 20-30 mg / mL. Optionally, after the deposition of the composite material, the method further comprises an annealing treatment, the annealing treatment is performed at a temperature of 80-120°C for 10-30 min.

12. An optoelectronic device, characterized in that The photoelectric device further comprises a hole functional layer between the anode and the active layer, and the material of the hole functional layer comprises a first passivation agent, wherein the first passivation agent is the passivation agent according to any one of claims 1-5; and / or The photoelectric device further comprises an electron functional layer between the active layer and the cathode, and the material of the electron functional layer comprises a second passivation agent, wherein the second passivation agent is the passivation agent according to any one of claims 1-5. ​ The photoelectric device further comprises an electron functional layer and a passivation layer, the electron functional layer is located between the active layer and the passivation layer, the passivation layer is located between the electron functional layer and the cathode, and the material of the passivation layer comprises a third passivation agent, the third passivation agent being the passivation agent in any one of claims 1 to 5.

13. The photoelectric device of claim 12, wherein, the materials of the first passivation agent, the second passivation agent and the third passivation agent are the same or different; and / or the thickness of the passivation layer is 1 nm to 5 nm; and / or the material of the hole functional layer further comprises a first P-type semiconductor material, the first P-type semiconductor material being the P-type semiconductor material in any one of claims 6 to 7; and / or the material of the electron functional layer further comprises a first N-type semiconductor material, the first N-type semiconductor material being the N-type semiconductor material in any one of claims 6 to 7; the first N-type semiconductor material and the third passivation agent are connected by a covalent bond; and / or The active layer comprises a light-emitting layer, a material of the light-emitting layer comprises one or more of an organic light-emitting material selected from one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium (III)], 4,4',4"-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium], diaryl anthracene derivative, stilbene aromatic derivative, pyrene derivative, fluorene derivative, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescent material, TTA material, TADF material, polymer containing B-N covalent bond, HLCT material, Exciplex light-emitting material; and a quantum dot material selected from one or more of a single-structure quantum dot, a core-shell quantum dot and a perovskite quantum dot; a material of the single-structure quantum dot, a core material of the core-shell quantum dot and a shell material of the core-shell quantum dot are respectively selected from one or more of a II-VI compound, a IV-VI compound, a III-V compound and a I-III-VI compound; the shell of the core-shell quantum dot comprises one or more layers; the II-VI compound is selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe.The III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI compound is selected from one or more of CuInS2, CuInSe2, and AgInS2; the core-shell quantum dot is selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the material of the perovskite quantum dot is selected from a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor; the inorganic perovskite semiconductor has a general structure of AMX'3, where A is Cs; + ion, M is a divalent metal cation selected from one or more of Pb 2+ , Sn 2 + , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ , and X' is a halide anion selected from one or more of Cl - , Br - , I - ; the organic-inorganic hybrid perovskite semiconductor has a general structure of BMX'3, where B is an organic amine cation selected from one or more of CH3(CH2) n-2 NH3 + , [NH3(CH2) n NH3] 2+ , where n > 2, and M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu 2+ one or more of the group consisting of Cl - Br - I - ; and / or the materials of the anode and the cathode respectively comprise one or more of a metal, a carbon material and a metal oxide; the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material comprises one or more of graphite, carbon nanotube, graphene and carbon fiber; the metal oxide comprises a metal oxide electrode or a composite electrode with a metal arranged between a doped or undoped transparent metal oxide, the material of the metal oxide electrode comprising one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode comprising one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

14. A display device comprising: The photoelectric device as claimed in any one of claims 12 to 13. The photoelectric device as claimed in any one of claims 12 to 13.

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