Defect monitoring method, device and system and storage medium

Abstract

The invention provides a defect monitoring method, device and system and a storage medium, in a wafer manufacturing process, whether key factors on a production line are changed is monitored, and the key factors comprise at least one of a used material on the production line, a machine condition of a semiconductor machine and a use program of the semiconductor machine; and when the key factors are monitored to change, the first batch of wafers processed in the changed production line state are sent to the defect detection machine table so as to detect the first batch of wafers after the key factors change, so that the yield of the wafers when the key factors on the production line change can be monitored in time, and the number of defects of the wafers is reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor integration and products, and more particularly to a defect monitoring method, device, system, and storage medium. Background Technology

[0002] The stability of semiconductor manufacturing (Fab) production lines is crucial for ensuring production quality. Therefore, it is necessary to conduct defect detection to promptly identify problems on the line and stop production immediately when anomalies occur, thereby minimizing the impact on wafers.

[0003] Currently, the most common defect monitoring method on semiconductor manufacturing production lines is random sampling, which involves randomly selecting wafers for scanning and re-inspection, resulting in low monitoring efficiency. Summary of the Invention

[0004] This invention provides a defect monitoring method, device, system, and storage medium to improve monitoring efficiency on semiconductor manufacturing production lines.

[0005] In a first aspect, the present invention provides a defect monitoring method, comprising:

[0006] During the wafer manufacturing process, it is important to monitor whether there are any changes in key factors on the production line. These key factors include at least one of the following: the materials used on the production line, the condition of the semiconductor equipment, and the operating program of the semiconductor equipment.

[0007] When a change in the key factor is detected, the first batch of wafers processed under the changed production line condition will be sent to a defect inspection machine for inspection.

[0008] Optionally, the materials used on the production line may be supplied sequentially from at least two backup sources;

[0009] Specifically, when a change in the key factor is detected, the first batch of wafers processed under the changed production line condition will be dispatched to the defect inspection machine. This includes: when a switch is detected in the backup source corresponding to the material used on the production line, the first batch of wafers processed under the switched backup source will be dispatched to the defect inspection machine.

[0010] Optionally, the materials in the backup source are supplied to the usage bins, and then the usage bins are used to supply the materials to the production line;

[0011] Specifically, when the backup source corresponding to the material used on the production line is switched, the first batch of wafers processed under the new backup source will be dispatched to the defect inspection machine, including:

[0012] When the backup source corresponding to the material used on the production line is detected to switch from the Nth bucket to the N+1th bucket, the first time point when the backup source switches from the Nth bucket to the N+1th bucket is recorded; wherein, when the material in the Nth bucket is emptied by the used bucket, the backup source of the used bucket is switched from the Nth bucket to the N+1th bucket, and the used bucket has a preset capacity of material remaining, where N is an integer greater than 0;

[0013] The consumption time of the material in the remaining preset capacity in the usage bucket is obtained by using a pre-established material consumption time model;

[0014] Calculate the second time point at which the material from the (N+1)th barrel is supplied to the production line based on the first time point and the consumption duration; and,

[0015] The first batch of wafers processed from the second time point are sent to the defect inspection machine.

[0016] Optionally, the method for switching the backup source of the bucket from the Nth bucket to the N+1th bucket includes:

[0017] After the material in the Nth bucket is emptied by the usage bucket, the material in the N+1th bucket is transferred to the Nth bucket, and the Nth bucket supplies material to the usage bucket, so that the backup source of the usage bucket is switched from the Nth bucket to the N+1th bucket.

[0018] Optionally, the method for establishing the material consumption time model includes:

[0019] A material consumption time model is established based on the type of material, the concentration of the material, the consumption rate of the material, and the actual consumption time of the material.

[0020] Optionally, the materials used include at least one of: polishing slurry, photoresist, etching solution, polishing pad of the semiconductor machine, and dresser of the semiconductor machine.

[0021] Optionally, during the wafer manufacturing process, the condition of the semiconductor equipment operating on the production line may change, including monitoring whether the semiconductor equipment requires maintenance or is out of service.

[0022] Optionally, monitoring whether key factors on the production line change during wafer manufacturing specifically includes:

[0023] During wafer manufacturing, it is necessary to monitor whether the preset programs of the semiconductor equipment running on the production line change. The preset programs include the program corresponding to the execution steps of at least one of the processes of etching, deposition, and polishing.

[0024] In a second aspect, the present invention provides a defect monitoring device, comprising: a memory and a processor;

[0025] The memory is used to store instructions; the processor is used to invoke the instructions in the memory to execute the first aspect and any possible defect detection method in the design of the first aspect.

[0026] Thirdly, the present invention provides a defect monitoring system, including the aforementioned defect monitoring equipment and defect detection machine.

[0027] Fourthly, the present invention provides a computer-readable storage medium storing computer instructions, wherein when at least one processor of a defect monitoring device executes the computer instructions, the defect monitoring device performs the first aspect and any possible design of the first aspect of the defect monitoring method.

[0028] Fifthly, the present invention provides a computer program product comprising computer instructions, wherein when at least one processor of a defect monitoring device executes the computer instructions, the defect monitoring device executes the first aspect and any possible design of the first aspect of the defect monitoring method.

[0029] The defect monitoring method, equipment, system, and storage medium provided by this invention monitor whether key factors on the production line change during the wafer manufacturing process. Key factors include at least one of the materials used on the production line, the condition of the semiconductor equipment, and the operating program of the semiconductor equipment. When a change in a key factor is detected, the first batch of wafers processed under the changed production line condition is sent to a defect detection machine for inspection of the first batch of wafers after the change in key factors. This enables timely monitoring of wafer yield when key factors on the production line change, thereby reducing the number of wafer defects. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0031] Figure 1 A flowchart of a defect monitoring method provided in an embodiment of the present invention;

[0032] Figure 2 This is a schematic diagram of material supply on a production line according to an embodiment of the present invention;

[0033] Figure 3 A flowchart of a defect monitoring method provided in another embodiment of the present invention;

[0034] Figure 4A flowchart illustrating a defect monitoring method provided in another embodiment of the present invention;

[0035] Figure 5 This is a schematic diagram of the hardware structure of a defect monitoring device provided in an embodiment of the present invention;

[0036] Figure 6 This is a schematic diagram of the structure of a defect monitoring system provided in an embodiment of the present invention. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0038] As described in the background section, defect monitoring is a crucial step in ensuring the stability of semiconductor manufacturing production lines. The comprehensiveness, timeliness, and accuracy of defect monitoring are of paramount importance. Currently, the most common defect monitoring method on semiconductor manufacturing production lines is random sampling, which involves randomly selecting wafers for scanning and re-inspection to pinpoint the source of problems and ensure that the semiconductor equipment and process parameters on the production line are kept in a healthy state.

[0039] However, in reality, due to the large number of semiconductor machines on the production line and the complexity of the process, and the inventor's research, it was discovered that even small changes in the semiconductor manufacturing production line could become the source of problems, increasing the possibility of defects in the wafers.

[0040] To address this, the present invention proposes a defect monitoring method. During the wafer fabrication process, key factors on the production line are monitored. When a change in a key factor is detected, the first batch of wafers processed under the changed production line condition are sent to a defect detection machine for inspection. This allows for timely monitoring of wafer yield when key factors on the production line change, thereby reducing the number of wafer defects.

[0041] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0042] Figure 1 A flowchart of a defect monitoring method according to an embodiment of the present invention is shown. Figure 1 As shown, with the defect monitoring equipment as the executing entity, the method in this embodiment may include the following steps:

[0043] S101. During the wafer manufacturing process, monitor whether key factors on the production line change.

[0044] Key factors include at least one of the following: materials used on the production line, the condition of the semiconductor equipment running on the production line, and the operating program of the semiconductor equipment running on the production line.

[0045] It should be noted that the wafer manufacturing process is a multi-step pipeline operation, which may include: wafer processing - oxidation - photolithography - etching - thin film deposition - epitaxial growth - diffusion - ion implantation.

[0046] In this embodiment of the invention, monitoring whether key factors on the production line change during wafer manufacturing includes monitoring whether key factors change in each process step of the wafer manufacturing process.

[0047] Since different process steps may use different materials, the materials used on the production line can include slurry, photoresist, etching solution, and components of semiconductor equipment, such as polishing pads and disks. The status of semiconductor equipment can include maintenance (PM), downtime, and restart. Maintenance refers to regular equipment uptime, downtime refers to equipment shutdown, and restart refers to restarting the equipment after a shutdown.

[0048] Semiconductor equipment operating programs include the programs and codes corresponding to the execution steps of each process. In semiconductor manufacturing, various equipment are used to perform different process steps, and the operation of these equipment is usually implemented by specialized programs (control software). For example, the operating program for a lithography machine includes: setting exposure time and intensity, selecting and loading the mask, aligning the wafer and mask, and executing the exposure process; the operating program for a plasma etching machine includes: setting the type and flow rate of the etching gas, setting the RF power, setting the etching time, and starting the etching process; the operating program for a chemical vapor deposition machine includes: setting the gas flow rate and ratio, setting the reaction chamber temperature, setting the deposition time, and starting the deposition process; and the operating program for a chemical mechanical polishing (CMP) machine includes: setting the type and flow rate of the polishing slurry, setting the polishing pressure, setting the polishing time, and starting the polishing process.

[0049] In some embodiments, monitoring changes in the materials used on the production line may include monitoring whether a backup source for the materials on the production line has switched. Specifically, a usage bin is typically installed on the production line. This usage bin obtains the materials used from the backup source and supplies the materials to the production line. To ensure an uninterrupted supply of materials, at least two backup sources may be installed simultaneously, such as a Nth bin and an N+1th bin. Figure 2 As shown, Figure 2The diagram illustrates the material supply process on the production line. The Nth bucket prioritizes supplying materials to the used buckets. When the material in the Nth bucket is emptied, the backup source switches from the Nth bucket to the (N+1)th bucket. One switching method involves transferring material from the (N+1)th bucket to the Nth bucket, and then supplying materials to the used buckets through the Nth bucket. Therefore, during wafer manufacturing, the switching of the backup source for used materials on the production line can be monitored to detect changes in the materials used on the line. In other embodiments, changes in the type of materials used on the production line can also be monitored.

[0050] In some embodiments, the machine condition changes of the equipment that need to be monitored can be predefined according to actual conditions, such as machine condition changes that may have a significant impact on wafers. Then, during the wafer manufacturing process, the machine condition of the semiconductor equipment running on the production line can be monitored to see if changes occur, such as whether a machine has stopped or needs maintenance. In other embodiments, all machine condition changes of the semiconductor equipment running on the production line can also be monitored, such as whether a machine has stopped, needs maintenance, or needs to be restarted.

[0051] In some embodiments, the operating programs of the equipment that need to be monitored can be predefined according to actual conditions. During wafer manufacturing, the preset programs of the semiconductor equipment running on the production line can be monitored to see if they change. In practical applications, the operating programs of semiconductor equipment may be adjusted according to actual conditions, and changes in some operating programs may affect the precision of the wafer. In this embodiment, some operating programs that need to be monitored are predefined, and then the preset programs on the production line can be monitored to see if they change. The preset programs may include programs corresponding to the execution steps of at least one of the processes: etching, deposition, and polishing.

[0052] S102. When a change in key factors is detected, the first batch of wafers processed under the changed production line condition will be sent to the defect inspection machine for inspection.

[0053] In this embodiment of the invention, when a change in a key factor is detected in a process, or when a change in a key factor is detected between different processes, the first batch of wafers processed under the changed production line condition are dispatched to the defect monitoring machine.

[0054] For example, when a change in the materials used on the production line is detected during wafer manufacturing, the first batch of wafers processed with the changed materials will be sent to a defect monitoring machine. For instance, if a switch to a backup source corresponding to the materials used on the production line is detected, the first batch of wafers processed with the new backup source will be sent to a defect detection machine. Similarly, when a change in the operating condition of a semiconductor machine on the production line is detected during wafer manufacturing, the first batch of wafers processed with the new operating condition will be sent to a defect detection machine to promptly confirm whether the machine has returned to normal operation. Likewise, when a change in the operating program of a semiconductor machine on the production line is detected during wafer manufacturing, the first batch of wafers processed with the new operating program will be sent to a defect detection machine to promptly confirm the health of the operating program.

[0055] The defect monitoring method provided by this invention can monitor the wafer yield in a timely manner when key factors on the production line change, thereby reducing the number of wafer defects.

[0056] Figure 3 This is a schematic flowchart illustrating another defect monitoring method according to an embodiment of the present invention. Figure 3 As shown, in step S102, when a change in a key factor is detected, the first batch of wafers processed under the changed production line condition are sent to the defect monitoring machine so that the defect detection machine can inspect the first batch of wafers, including the following steps.

[0057] S201. When the backup source corresponding to the material used on the production line is switched from the Nth barrel to the N+1th barrel, record the first time point when the backup source is switched from the Nth barrel to the N+1th barrel.

[0058] When using the remaining preset capacity of material from the Nth bucket, the backup source is switched from the Nth bucket to the (N+1)th bucket, where N is an integer greater than 0.

[0059] As mentioned in the above embodiments, to ensure an uninterrupted supply of materials, at least two backup sources are installed simultaneously. The backup sources supply materials to the usage buckets, and the usage buckets supply materials to the corresponding machines. In other words, the backup sources supply materials to the machines through the usage buckets. Furthermore, to ensure an uninterrupted supply of materials to the machines, typically when the material in the Nth bucket is emptied (i.e., when all the material in the Nth bucket is transferred to the usage bucket), the backup source switches from the Nth bucket to the (N+1)th bucket. At this time, the usage bucket still contains a preset capacity of material from the Nth bucket. Therefore, when the backup source of the usage bucket switches, the remaining preset capacity of material in the usage bucket is used.

[0060] In this embodiment, the first time point when the backup source switches from the Nth bucket to the N+1th bucket is recorded, so as to calculate the time when the material in the N+1th bucket arrives at the machine.

[0061] S202. Obtain the consumption time of materials with the remaining preset capacity in the bucket by using a pre-established material consumption time model.

[0062] As one approach, a material consumption time model can be established based on the type of material, its concentration, its consumption rate, and its actual consumption time. Since different materials, concentrations, and consumption rates all affect the consumption time, the material consumption time model can be trained based on the material, its concentration, its consumption rate, and its actual consumption time to more accurately estimate the material consumption time.

[0063] In practical applications, the actual consumption time of a material can be obtained experimentally, given a fixed type, concentration, and consumption rate. Therefore, a material consumption time model can be established based on the type, concentration, consumption rate, and actual consumption time of the material.

[0064] S203. Calculate the second time point at which the material of the N+1th barrel is supplied to the machine based on the first time point and the consumption time.

[0065] It can be understood that the first time point A1 when the backup source switches from bucket N to bucket N+1, plus the consumption time A0 of the material from bucket N in the used bucket, is the second time point when the material in bucket N+1 is supplied to the machine, which is also the time point Achange when the machine consumes the material from bucket N+1. Figure 2 As shown.

[0066] S204. The first batch of wafers processed from the second time point is sent to the defect inspection machine.

[0067] As described above, the second time point is the time when the material in the N+1th barrel is supplied to the machine, that is, the time when the material used by the machine is replaced. The first batch of wafers processed from this time point is sent to the defect detection machine to confirm the safety of the new material.

[0068] The defect monitoring method provided in this embodiment takes the updating of materials used on the production line as the starting point. It calculates the time for new materials to be supplied to the machine through a material consumption time model, and detects the first batch of wafers under the new material supply to confirm the safety of the new materials in a timely manner and reduce defects caused by material changes.

[0069] Figure 4 This is a schematic flowchart illustrating another defect monitoring method according to an embodiment of the present invention. Figure 4 As shown, the defect monitoring method provided in this embodiment includes:

[0070] S301, Preset preset machine conditions and preset programs.

[0071] The preset machine condition can include at least one of maintenance or downtime.

[0072] The preset program may include the program corresponding to the execution step of at least one of the processes of etching, deposition, and polishing.

[0073] S302. During the wafer manufacturing process, monitor whether the materials used on the production line change, monitor whether the condition of the semiconductor equipment running on the production line changes, and monitor whether the preset program of the semiconductor equipment running on the production line changes.

[0074] When it is detected that the backup source corresponding to the material used on the production line is switched from the Nth barrel to the N+1th barrel, step S303 is executed; when it is detected that the condition of the semiconductor machine running on the production line changes, step S304 is executed; when it is detected that the preset program of the semiconductor machine running on the production line changes, step S305 is executed.

[0075] S303. Record the first time point when the backup source switches from the Nth bucket to the N+1th bucket. Obtain the consumption time of the material from the Nth bucket using the remaining preset capacity in the bucket through a pre-established material consumption time model. Calculate the second time point when the material from the N+1th bucket is supplied to the machine based on the first time point and the consumption time. Send the first batch of wafers processed from the second time point to the defect detection machine for inspection.

[0076] S304. The first batch of wafers processed under the changed semiconductor equipment conditions are sent to the defect inspection equipment for inspection.

[0077] S305, The first batch of wafers processed under the modified semiconductor equipment operating program is dispatched to the defect inspection equipment for inspection.

[0078] The defect monitoring method provided in this embodiment predefines preset machine conditions and preset programs so that only the machine conditions and programs that have a significant impact on the wafer are monitored, thereby improving monitoring efficiency.

[0079] Figure 5 A schematic diagram of the hardware structure of a defect monitoring device provided in an embodiment of the present invention is shown. Figure 5 As shown, the defect monitoring device 20 is used to implement the operation corresponding to the defect monitoring device in any of the above method embodiments. The defect monitoring device 20 in this embodiment may include: a memory 21, a processor 22 and a communication interface 23.

[0080] The memory 21 is used to store computer instructions. The memory 21 may include high-speed random access memory (RAM) and may also include non-volatile memory (NVM), such as at least one disk storage device, and may also be a USB flash drive, external hard drive, read-only memory, disk or optical disc, etc.

[0081] Processor 22 is used to execute computer instructions stored in memory to implement the defect monitoring method in the above embodiments. For details, please refer to the relevant descriptions in the foregoing method embodiments. The processor 22 can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), etc. A general-purpose processor can be a microprocessor or any conventional processor. The steps of the method disclosed in this invention can be directly implemented by a hardware processor, or implemented by a combination of hardware and software modules within the processor.

[0082] Alternatively, the memory 21 can be either standalone or integrated with the processor 22.

[0083] The communication interface 23 can be connected to the processor 22. The processor 22 can control the communication interface 23 to realize the functions of receiving and sending signals.

[0084] The defect monitoring device provided in this embodiment can be used to perform the defect monitoring method described above. Its implementation method and technical effect are similar, and will not be described again in this embodiment.

[0085] Figure 6 A schematic diagram of the structure of a defect monitoring system provided in an embodiment of the present invention is shown. Figure 6 As shown, the defect monitoring system includes: defect monitoring equipment 20 and defect detection machine 10.

[0086] The defect monitoring equipment 20 is used to monitor whether key factors on the production line change during the wafer manufacturing process, and when a change is detected, to dispatch the first batch of wafers processed under the changed production line condition to the defect inspection machine 10. The defect inspection machine 10 is used to inspect the wafers dispatched by the defect monitoring equipment 20.

[0087] For example, the defect monitoring device 20 can access a database containing material, program, and machine condition information in order to determine whether the material, program, and / or machine condition has changed.

[0088] In some embodiments, the defect monitoring device 20 can record the time point of material replacement and use the model to estimate the time point when the new material arrives at the machine, lock the first batch of wafers after that time point, and send the first batch of wafers to the defect detection machine 10. The defect detection machine 10 can detect the first batch of wafers through scanning, shooting and other operations.

[0089] The present invention also provides a computer-readable storage medium storing computer instructions, which, when executed by a processor, are used to implement the methods provided in the various embodiments described above.

[0090] The present invention also provides a computer program product comprising computer instructions stored in a computer-readable storage medium. At least one processor of the device can read the computer instructions from the computer-readable storage medium, and the at least one processor executes the computer instructions to cause the device to perform the methods provided in the various embodiments described above.

[0091] This invention also provides a chip including a memory and a processor. The memory stores computer instructions, and the processor retrieves and executes the computer instructions from the memory, causing a device equipped with the chip to perform the methods described in the various possible embodiments described above.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A defect monitoring method characterized by, The method comprises: In a wafer manufacturing process, whether a key factor on a production line changes is monitored, the key factor including at least one of a material used on the production line, a machine condition of a semiconductor machine, and a use program of the semiconductor machine; When the key factor is monitored to change, a first batch of wafers processed under a changed production line state is sent to a defect detection machine to detect the first batch of wafers.

2. The method of claim 1, wherein, The material used on the production line is supplied by at least two backup sources in turn; Wherein, when the key factor is monitored to change, the first batch of wafers processed under the changed production line state is sent to the defect detection machine, specifically including: when the backup source corresponding to the material used on the production line is monitored to switch, the first batch of wafers processed under the switched backup source is sent to the defect detection machine.

3. The method of claim 2, wherein, The material in the backup source is supplied to a use barrel, and the material is supplied to the production line through the use barrel; Wherein, when the backup source corresponding to the material used on the production line is monitored to switch, the first batch of wafers processed under the switched backup source is sent to the defect detection machine, specifically including: When the backup source corresponding to the material used on the production line is monitored to switch from an Nth barrel to an N+1th barrel, a first time point at which the backup source is switched from the Nth barrel to the N+1th barrel is recorded; wherein, when the material in the Nth barrel is emptied by the use barrel, the backup source of the use barrel is switched from the Nth barrel to the N+1th barrel, and the use barrel remains a preset capacity of material, and N is an integer greater than 0; A consumption time of the remaining preset capacity of material in the use barrel is obtained through a pre-established material consumption time model; A second time point at which the material in the N+1th barrel is supplied to the production line is calculated according to the first time point and the consumption time; and The first batch of wafers processed from the second time point is sent to the defect detection machine.

4. The method of claim 3, wherein, The method for switching the backup source of the use barrel from the Nth barrel to the N+1th barrel comprises: After the material in the Nth barrel is emptied by the use barrel, the material in the N+1th barrel is transitioned to the Nth barrel, and the use barrel is supplied with the material through the Nth barrel, so that the backup source of the use barrel is switched from the Nth barrel to the N+1th barrel.

5. The method of claim 3, wherein, The method for establishing the material consumption time model comprises: A material consumption time model is established based on a kind of material, a concentration of the material, a consumption speed of the material, and an actual consumption time of the material.

6. The method according to any one of claims 1 to 5, characterized in that, The material used includes at least one of a grinding liquid, a photoresist, an etching liquid, a grinding pad of the semiconductor machine, and a trimmer of the semiconductor machine.

7. The method according to any one of claims 1 to 5, characterized in that, In a wafer manufacturing process, whether a machine condition of a semiconductor machine running on a production line changes includes whether the semiconductor machine is repaired or down.

8. The method according to any one of claims 1-5, characterized in that, In a wafer manufacturing process, whether a preset program of a semiconductor machine running on a production line changes, the preset program including a program corresponding to an execution step of at least one process of etching, deposition, and grinding.

9. A defect monitoring apparatus characterized by comprising: Comprise: A processor, and a memory in communication connection with the processor; The memory stores computer execution instructions; The processor executes computer-executed instructions stored in the memory to implement the defect monitoring method according to any one of claims 1 to 8.

10. A defect detection system, characterized by, Comprise: The defect monitoring device and the defect detection machine table according to claim 9.

11. A computer readable storage medium, characterized in that, The computer readable storage medium stores computer instructions, and the computer instructions are executed by the processor to implement the defect monitoring method according to any one of claims 1 to 8.

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