Complementary metal oxide semiconductor device and repair circuit
By introducing a self-healing functional layer into CMOS devices and performing heat repair when damaged, the problem of microstructure damage in the devices is solved, achieving self-healing and extended lifespan of the devices, and reducing circuit costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-27
- Publication Date
- 2026-03-10
AI Technical Summary
Traditional complementary metal-oxide-semiconductor (CMOS) devices are prone to microstructural damage under long-term high-load operation or strong radiation environments, leading to changes in electrical performance and open-circuit faults, affecting service life and increasing circuit costs.
Introducing a self-healing functional layer into CMOS devices allows for the heating of the device when microstructural damage is detected by heating electrodes. The self-healing functional layer then repairs the damage and restores the conductive channels.
It extends the lifespan of CMOS devices, reduces circuit costs, and restores devices to a usable state by recovering microstructural damage through the self-healing functional layer.
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Figure CN121646358A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of semiconductor, in particular to a complementary metal-oxide-semiconductor device and a repair circuit. BACKGROUND
[0002] The conventional complementary metal-oxide-semiconductor (CMOS) device is prone to various microstructure damages in long-term high-load operation conditions or strong radiation environment, mainly embodied as lattice distortion of the silicon functional layer as a conductive channel and other microstructure damages. Such microstructure damages can have a significant impact on the electrical performance of the device, causing irreversible drift changes of the source-drain current, and even causing open-circuit failure between the source-drain electrodes in severe cases.
[0003] After the complementary metal-oxide-semiconductor device in the circuit appears microstructure damage, it cannot continue to be used and can only be replaced with a new complementary metal-oxide-semiconductor device. It can be seen that the microstructure damage can seriously affect the service life of the complementary metal-oxide-semiconductor device and increase the circuit cost. SUMMARY
[0004] Therefore, it is necessary to provide a complementary metal-oxide-semiconductor device and a repair circuit to realize self-repair of the microstructure damage of the complementary metal-oxide-semiconductor device, thereby prolonging the service life of the complementary metal-oxide-semiconductor device and reducing the circuit cost.
[0005] In a first aspect, the present application provides a complementary metal-oxide-semiconductor device, comprising:
[0006] a substrate and a heating electrode arranged on a first surface of the substrate, the heating electrode being configured to heat the complementary metal-oxide-semiconductor (CMOS) device when a heating power source is connected;
[0007] an insulating layer formed on a second surface of the substrate;
[0008] a self-repair functional layer formed on the insulating layer, the self-repair functional layer being configured to perform self-repair of damage when the CMOS device is heated;
[0009] a gate oxide layer formed on the self-repair functional layer;
[0010] a metal electrode layer formed on the gate oxide layer, a source and a drain in the metal electrode layer being connected to the self-repair functional layer by penetrating the gate oxide layer.
[0011] In an embodiment, the thickness of the self-repair functional layer is [1, 30] nm.
[0012] In one embodiment, the material of the self-repairing functional layer is tin diselenide, diantimony triselenide, diindium triselenide, or bismuth telluride.
[0013] In one embodiment, the region of the self-repairing functional layer under the source electrode is a first via structure, the first via structure is filled with a first contact electrode, and the first contact electrode is used to connect the source electrode and the self-repairing functional layer; and the region of the self-repairing functional layer under the drain electrode is a second via structure, and the second via structure is filled with a second contact electrode, and the second contact electrode is used to connect the drain electrode and the self-repairing functional layer.
[0014] In a second aspect, the present application provides a self-repairing circuit, comprising:
[0015] A current collection module is configured to collect a source-drain current of a complementary metal-oxide-semiconductor (CMOS) device.
[0016] A drift judgment module is connected to the current collection module and configured to output a first level when a drift degree of the source-drain current exceeds a drift threshold.
[0017] A control module is connected to the drift judgment module, the power on-off module, and the heating power supply, and configured to, when the first level is received, cut off a working power supply of the CMOS device through the power on-off module, and start a heating operation of the heating power supply, so that the CMOS device connected to the heating power supply is self-repaired under heating.
[0018] In one embodiment, the control module is further configured to, after the self-repairing is completed, connect the working power supply of the CMOS device through the power on-off module, and update the drift threshold used by the drift judgment module according to a source-drain current of the CMOS device after the self-repairing.
[0019] In one embodiment, the current collection module comprises a sampling resistor connected to a drain electrode of the CMOS device, configured to convert the source-drain current into a first voltage signal, and the first voltage signal is proportional to the source-drain current.
[0020] In one embodiment, the current collection module further comprises an operational amplifier connected to the sampling resistor, configured to amplify the first voltage signal into a second voltage signal.
[0021] In one embodiment, the drift judgment module comprises a comparator configured to, when the second voltage signal is less than or equal to a reference voltage, output the first level; and when the second voltage signal is greater than the reference voltage, output a second level, and the second level is different from the first level; wherein the reference voltage is determined according to the drift threshold.
[0022] In one embodiment, the control module is further configured to control the heating power supply to stop heating work after the CMOS device is heated to the preset repair temperature and the temperature holding duration reaches the preset duration.
[0023] The complementary metal oxide semiconductor device and the repair circuit have the following advantages. The source and the drain in the metal electrode layer are respectively connected to the self-repairing functional layer by penetrating the gate oxide layer, so that the source and the drain are electrically connected to the self-repairing functional layer, and a conductive channel is formed in the source and the drain. Based on the conductive channel, the CMOS device can work normally. When the self-repairing functional layer in the CMOS device is damaged and cannot be used, the heating power supply heats the CMOS device through the heating electrode. In the case that the CMOS device is heated, the self-repairing functional layer can repair the microstructure damage, so that the microstructure damage in the self-repairing functional layer is greatly reduced, and the CMOS device is restored to a usable state, the service life of the CMOS device is prolonged, and the cost of the circuit using the CMOS device is reduced. BRIEF DESCRIPTION OF DRAWINGS
[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the drawings needed to be used in the description of the embodiments of the present application or the related art will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other related drawings can also be obtained without creative labor.
[0025] Figure 1 A structural schematic diagram of a CMOS device connected to a heating power supply in one embodiment;
[0026] Figure 2 A structural schematic diagram of a repair circuit in one embodiment;
[0027] Figure 3 A structural schematic diagram of a current collection module in one embodiment;
[0028] Figure 4 A structural schematic diagram of a current collection module in one embodiment;
[0029] Figure 5 A structural schematic diagram of a drift judgment module in one embodiment;
[0030] Figure 6 A structural schematic diagram of a repair circuit in one embodiment.
[0031] REFERENCE SIGNS:
[0032] 101 - substrate; 102 - insulating layer; 103 - self-repairing functional layer; 104 - gate oxide layer; 105 - heating electrode; 1061 - first contact electrode; 1062 - second contact electrode; 107 - source; 108 - gate; 109 - drain;
[0033] 1 - CMOS device; 2 - MOSFET device; 3 - sampling resistor; 4 - operational amplifier; 5 - comparator; 6 - MCU; VDD - working power supply; G - gate; D - drain; S - source; V out1 - first voltage signal; V ref - reference voltage; V out2 - second voltage signal; GPIO1 - first pin; GPIO2 - second pin; GPIO3 - third pin. DETAILED DESCRIPTION
[0034] In order to make the purposes, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not intended to limit the present application.
[0035] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the related drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.
[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terms used in the specification of the present application are only for the purpose of describing the specific embodiments of the present application and are not intended to limit the present application.
[0037] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present. It will also be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section; for example, a first doped type could be termed a second doped type; and similarly, a second doped type could be termed a first doped type; a first doped type and a second doped type are different doped types, e.g., a first doped type can be p-type and a second doped type can be n-type, or the first doped type can be n-type and the second doped type can be p-type.
[0038] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and / or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can also be oriented in the other direction (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
[0039] The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Also, as used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0040] Embodiments of the application will be described with reference to cross-sectional illustrations that are schematic representations of ideal embodiments (and intermediate structures) of the application. Variations to the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and / or a gradient of implant concentration at its edges rather than a binary change between implanted and non-implanted regions. Similarly, a buried region formed by implantation can result in some implantation in a region between the buried region and a surface through which the implantation was made. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the application.
[0041] In one example embodiment, a complementary metal-oxide-semiconductor device is provided. Referring to Figure 1 the complementary metal-oxide-semiconductor device comprises:
[0042] a substrate 101 and a heating electrode 105 disposed on a first surface of the substrate 101, the heating electrode 105 being configured to heat the complementary metal-oxide-semiconductor (CMOS) device when a heating power source is connected thereto;
[0043] an insulating layer 102 formed on a second surface of the substrate 101;
[0044] a self-repairing functional layer 103 formed on the insulating layer 102, the self-repairing functional layer 103 being configured to perform self-repairing of damages when the CMOS device is heated;
[0045] a gate oxide layer 104 formed on the self-repairing functional layer 103;
[0046] a metal electrode layer formed on the gate oxide layer 104, a source 107 and a drain 109 in the metal electrode layer being respectively connected to the self-repairing functional layer 103 by penetrating through the gate oxide layer 104.
[0047] wherein the CMOS device can be a P-type CMOS device or an N-type CMOS device. If the CMOS device is a P-type CMOS device, the substrate 101 is an N-type substrate. If the CMOS device is an N-type CMOS device, the substrate 101 is a P-type substrate.
[0048] wherein the substrate 101 is configured to provide support, and the substrate 101 can be made of silicon, or other materials, without limitation.
[0049] wherein the first surface can be a bottom surface, and the second surface can be a top surface, and in this case, the heating electrode 105 is disposed on the bottom surface of the substrate 101, and the insulating layer 102 is formed on the top surface of the substrate 101.
[0050] The heating electrode 105 is used to connect the heating power supply. The heating electrode 105 can be a copper electrode, and the thickness of the heating electrode 105 can be 5-200 nm. Of course, the heating electrode 105 can be made of other materials and have other thicknesses, which are not limited herein.
[0051] The insulating layer 102 is used to isolate the substrate 101 and the self-repairing functional layer 103. The material of the insulating layer 102 can be aluminum oxide, and of course other materials can also be selected, which are not limited herein.
[0052] The self-repairing functional layer 103 has a conductive capacity, and is a conductive channel between the source 107 and the drain 109. In a normal working condition of the CMOS device, the self-repairing functional layer 103 has a conductive function. However, in a long-term high-load operation condition or a strong radiation environment, the self-repairing functional layer 103 is damaged in a microstructure, and the CMOS device cannot work normally. Therefore, the CMOS device is heated. In the heated condition, the self-repairing functional layer 103 can be repaired due to the temperature rise, so as to greatly reduce the microstructure damage, and thus the CMOS device can continue to be applied in a circuit. It can be seen that the self-repairing functional layer 103 has a dual function of carrier transport channel and self-repairing.
[0053] The thickness of the self-repairing functional layer 103 can be [1, 30] nm, and the material of the self-repairing functional layer 103 can be tin diselenide, antimony diselenide, indium diselenide or bismuth telluride. Of course, the thickness of the self-repairing functional layer 103 can be other thicknesses, and the material of the self-repairing functional layer 103 can be other materials, which are not limited herein.
[0054] The gate oxide layer 104 is used to isolate the gate 108 in the metal electrode layer and the self-repairing functional layer 103, i.e. to form electrical isolation between the gate 108 and the self-repairing functional layer 103.
[0055] The gate oxide layer 104 can be silicon dioxide, and of course other materials can also be used, which are not limited herein.
[0056] The metal electrode layer includes the source 107, the gate 108 and the drain 109. The source 107 and the drain 109 are connected to the self-repairing functional layer 103 by penetrating the gate oxide layer 104, so as to form a conductive channel between the source 107 and the drain 109.
[0057] In an optional implementation, the region of the self-repairing functional layer 103 under the source electrode 107 is a first via structure, the first via structure is filled with a first contact electrode 1061, and the first contact electrode 1061 is used to connect the source electrode 107 and the self-repairing functional layer 103; and the region of the self-repairing functional layer 103 under the drain electrode 109 is a second via structure, and the second via structure is filled with a second contact electrode 1062, and the second contact electrode 1062 is used to connect the drain electrode 109 and the self-repairing functional layer 103.
[0058] The material of the contact electrode can be titanium or gold, and can also be other materials, which are not limited herein.
[0059] As can be seen, the regions of the self-repairing functional layer 103 under the source electrode 107 and the drain electrode 109 are both via structures, and the via structures are filled with contact electrodes, so that the source electrode 107 and the drain electrode 109 can be electrically connected to the self-repairing functional layer 103 through the contact electrodes.
[0060] In the embodiment, the source electrode and the drain electrode in the metal electrode layer are connected to the self-repairing functional layer by penetrating the gate oxide layer, so that the source electrode and the drain electrode are electrically connected to the self-repairing functional layer, thereby forming a conductive channel in the source electrode and the drain electrode, and the CMOS device can work normally based on the conductive channel. When the self-repairing functional layer in the CMOS device is damaged and cannot be used, the heating power supply heats the CMOS device through the heating electrode. In the case that the CMOS device is heated, the self-repairing functional layer can repair the microstructure damage, thereby greatly reducing the microstructure damage in the self-repairing functional layer, and further making the CMOS device return to the usable state, prolonging the service life of the CMOS device, and reducing the cost of the circuit using the CMOS device.
[0061] In an exemplary embodiment, a repair circuit is provided, as shown in Figure 2 The repair circuit comprises:
[0062] A current collection module is configured to collect the source-drain current of the CMOS device.
[0063] A drift judgment module is connected to the current collection module and configured to output a first level when the drift degree of the source-drain current exceeds a drift threshold.
[0064] A control module is connected to the drift judgment module, the power supply on-off module and the heating power supply, and configured to, when the first level is received, cut off the working power supply of the CMOS device through the power supply on-off module, and start the heating work of the heating power supply, so that the CMOS device connected to the heating power supply is repaired under the condition of being heated. The CMOS device is the CMOS device provided in the above embodiments.
[0065] It can be seen that the process of repairing the CMOS device by the repair circuit includes: the current collection module collects the source-drain current of the CMOS device, the drift judgment module judges whether the drift degree of the source-drain current exceeds the drift threshold, and outputs the first level if the drift degree exceeds the drift threshold; otherwise, the second level is output. The control module cuts off the working power supply of the CMOS device through the power supply on-off module in the case that the drift judgment module outputs the first level, so that the CMOS device stops working; and the control module starts the heating work of the heating power supply, so that the heating power supply heats the CMOS device, and the self-repairing functional layer in the CMOS device repairs the damaged structure after the temperature rises, so as to realize the repair of the CMOS device.
[0066] Of course, in the case that the drift judgment module outputs the second level, the control module will not cut off the working power supply of the CMOS device, so that the CMOS device continues to work normally, and will not start the heating work of the heating power supply, so that the CMOS device will not be heated. It can be seen that the microstructure damage of the self-repairing functional layer in the CMOS device at this time is not enough to make the drift degree of the source-drain current exceed the drift threshold, so it can work normally.
[0067] In an optional implementation, the control module is further configured to: control the heating power supply to stop the heating work after the heating power supply heats the CMOS device to a preset repair temperature and the temperature maintaining duration reaches a preset duration.
[0068] The preset repair temperature can be set as needed, for example, 200-500℃, and of course can also be other temperatures, which are not limited herein.
[0069] The preset duration can be set as needed, for example, 5-30 minutes, and of course can also be other durations, which are not limited herein.
[0070] The applied voltage of the heating power supply can be set as needed, for example, 3-10V, and of course can also be other voltage values, which are not limited herein.
[0071] The self-repairing functional layer of the CMOS device occurs atomic diffusion and lattice reconstruction at the preset repair temperature, and realizes in-situ self-repairing.
[0072] It can be understood that after the control module controls the heating power supply to stop the heating work, the temperature of the CMOS device gradually returns to room temperature, and the control module will turn on the working power supply of the CMOS device through the power supply on-off module, so that the CMOS device reenters the working state.
[0073] In the above implementation, by controlling the heating temperature and the heating time length, the microstructure damage in the CMOS device can be ensured to be fully self-repaired, thereby improving the self-repairing effect.
[0074] In an optional implementation, the control module is further configured to: after the self-repairing is completed, turn on the working power supply of the CMOS device through the power supply on-off module; and update the drift threshold used by the drift judgment module according to the source-drain current of the CMOS device after the self-repairing.
[0075] That is, after the control module controls the CMOS device to re-enter the working state, the drift threshold is also updated. For example, the original drift threshold is 10% of the initial source-drain current of the CMOS device before the self-repairing, and the updated drift threshold is 10% of the initial source-drain current of the CMOS device after the self-repairing, thereby realizing adaptive updating of the drift threshold to ensure the judgment accuracy of the drift judgment module.
[0076] In an actual scenario, if the drift judgment module uses a comparator to realize the judgment of whether the drift degree exceeds the drift threshold, the controller determines the updated reference voltage according to the updated drift threshold, and inputs the updated reference voltage to the comparator, so that the comparator obtains the updated reference voltage.
[0077] In the above implementation, after the repair is completed, the drift threshold is also updated according to the source-drain current after the self-repairing, to improve the accuracy of the drift judgment module in judging whether the drift degree exceeds the drift threshold.
[0078] It can be understood that the circuit using the CMOS device is not the above repair circuit, and the function of the repair circuit is to control the CMOS device to perform self-repairing, and the circuit using the CMOS device is an application circuit of the CMOS device.
[0079] The power supply on-off module can use a MOSFET device (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide-semiconductor field-effect transistor). By turning on the MOSFET device, the connection between the CMOS device and the working power supply is turned on; by turning off the MOSFET device, the connection between the CMOS device and the working power supply is turned off. Of course, other ways can also be used to realize the power supply on-off module, which is not limited here.
[0080] The control module can be realized by using an MCU (Microcontroller Unit, microcontroller unit), and of course other ways can also be used, which is not limited here.
[0081] In the embodiment, when the microstructure damage of the CMOS device is such that the shift degree of the source-drain current exceeds the drift threshold, the control module cuts off the working power supply of the CMOS device through the power supply on-off module, so that the CMOS device stops working; the heating work of the heating power supply is started, so that the heating power supply heats the CMOS device, and the self-repairing functional layer in the CMOS device repairs the damaged structure after the temperature rises, so that the CMOS device is repaired, the microstructure damage in the self-repairing functional layer is greatly reduced, the CMOS device is restored to a usable state, the service life of the CMOS device is prolonged, and the cost of the circuit using the CMOS device is reduced.
[0082] On the basis of the technical solutions provided in the above embodiments, an optional embodiment is provided, in which the structure of the current collection module is refined.
[0083] Referring to Figure 3 , the current collection module comprises:
[0084] The sampling resistor 3 is connected to the drain of the CMOS device and is used to convert the source-drain current into a first voltage signal V out1 , which is proportional to the source-drain current. out1
[0085] In the embodiment, the source-drain current flows through the sampling resistor 3, so as to convert the source-drain current into the first voltage signal V out1 . Since the resistance value of the sampling resistor 3 is fixed, the greater the source-drain current is, the greater the first voltage signal V out1 is. The first voltage signal V out1 is used to represent the source-drain current, which is convenient for subsequent processing.
[0086] On the basis of the technical solutions provided in the above embodiments, an optional embodiment is provided, in which the structure of the current collection module is refined.
[0087] Referring to Figure 4 , the current collection module further comprises:
[0088] The operational amplifier 4 is connected to the sampling resistor 3 and is used to amplify the first voltage signal V out1 into a second voltage signal V out2 .
[0089] The positive input end of the operational amplifier 4 is connected to the first end of the sampling resistor 3, and the negative input end of the operational amplifier 4 is connected to the second end of the sampling resistor 3. The source-drain current flows from the second end to the first end of the sampling resistor 3.
[0090] In the embodiment, the current collection module includes a sampling resistor 3 and an operational amplifier 4. The sampling resistor 3 converts the source-drain current into a first voltage signal V out1 . Then, the first voltage signal V out1 is amplified by the operational amplifier 4 to obtain a second amplified signal with enhanced signal, thereby improving the sensitivity of the drift judgment module in judging the drift degree. out1
[0091] On the basis of the technical solution provided in the above embodiment, an optional embodiment is provided, in which the structure of the drift judgment module is refined.
[0092] Referring to Figure 5 , the drift judgment module includes:
[0093] a comparator 5, configured to output a first level when the second voltage signal V out2 is less than or equal to a reference voltage V ref , and output a second level when the second voltage signal V out2 is greater than the reference voltage V ref , the second level being different from the first level; wherein the reference voltage V ref is determined according to a drift threshold.
[0094] The second voltage signal V out2 is input to one input end of the comparator 5, and the reference voltage V ref is input to another input end of the comparator 5, so that the comparator 5 compares the second voltage signal V out2 with the reference voltage V ref , and outputs the first level or the second level.
[0095] If the second voltage signal V out2 is less than or equal to the reference voltage V ref , it indicates that the drift degree of the source-drain current is greater than the drift threshold. If the second voltage signal V out2 is greater than the reference voltage V ref , it indicates that the drift degree of the source-drain current is less than or equal to the drift threshold.
[0096] It can be understood that, in the normal case of the CMOS device 1, the source-drain current is large, the second voltage signal V out2 is higher than the reference voltage V ref , and the comparator 5 outputs the second level at this time. When the CMOS device 1 is damaged in microstructure, the source-drain current drifts, so the source-drain current becomes small, the second voltage signal V out2 becomes small accordingly, and the second voltage signal V out2 is less than or equal to the reference voltage V ref After that, the comparator 5 outputs the first level, so that the CMOS device 1 enters the self-repairing state.
[0097] In this embodiment, the comparator 5 compares the second voltage signal V out2 with the reference voltage V ref , and outputs the first level or the second level. If the first level is output, it indicates that the second voltage signal V out2 is less than or equal to the reference voltage V ref , and the drift degree of the source-drain current is greater than the drift threshold value. If the second level is output, it indicates that the second voltage signal V out2 is greater than the reference voltage V ref , and the source-drain current does not drift or the drift degree is less than or equal to the drift threshold value. It can be seen that the comparator 5 can accurately determine whether the drift degree of the source-drain current exceeds the drift threshold value.
[0098] In one embodiment, a repairing circuit is provided, as shown in Figure 6 , which comprises the MOSFET device 2, the sampling resistor 3, the operational amplifier 4, the comparator 5 and the MCU 6.
[0099] The MOSFET device 2 is connected between the gate G of the CMOS device 1 and the working power supply VDD as a power supply on-off module. The MOSFET device 2 is also connected to the first pin of the MCU 6.
[0100] The sampling resistor 3 is connected to the drain D of the CMOS device 1, so as to convert the source-drain current into the first voltage signal V out1 . The source S of the CMOS device 1 is grounded.
[0101] The operational amplifier 4 is connected to both ends of the sampling resistor 3, and is used to amplify the first voltage signal V out1 into the second voltage signal V out2 .
[0102] One end of the comparator 5 inputs the second voltage signal V out2 , and the other end inputs the reference voltage V ref . By comparing the second voltage signal V out2 with the reference voltage V ref , the second level is output when the second voltage signal V out2 is greater than the reference voltage V ref , and the first level is output when the second voltage signal V out2 is less than or equal to the reference voltage V ref .
[0103] In the case that the level signal outputted by the comparator 5 is changed from the second level to the first level, the MCU 6 controls the MOSFET device 2 to be off through the first pin GPIO1, so that the connection between the working power supply VDD and the gate of the CMOS device 1 is disconnected, and the CMOS device 1 stops working. Moreover, the MCU 6 controls the heating power supply to start working through the second pin GPIO2, so that the heating power supply heats the CMOS device 1, and the CMOS device 1 enters the self-repairing state. After the self-repairing is completed, the MCU 6 controls the heating power supply to stop heating the CMOS device 1 through the second pin GPIO2. After the temperature of the CMOS device 1 cools down to the room temperature, the MCU 6 controls the MOSFET device 2 to be on through the first pin GPIO1, so that the connection between the working power supply VDD and the gate G of the CMOS device 1 is connected, and the CMOS device 1 starts working again. After the CMOS device 1 starts working again, the MCU 6 updates the drift threshold value according to the initial source-drain current after the self-repairing, so as to determine the updated reference voltage V ref according to the drift threshold value, and inputs the updated reference voltage V ref to the comparator 5 through the third pin GPIO3, so that the comparator 5 obtains the updated reference voltage V ref , and the comparator 5 determines whether the drift degree of the source-drain current exceeds the drift threshold value according to the updated reference voltage V ref .
[0104] The technical features of the above embodiment can be combined in any manner. In order to make the description simple, all possible combinations of the technical features of the above embodiment are not described, however, as long as the combinations of the technical features do not contradict, they should be considered as the scope of the present application.
[0105] The above embodiment only expresses several implementation manners of the present application, and the description is relatively specific and detailed, however, it should not be understood as the limitation to the patent scope of the present application. It should be pointed out that, for the ordinary skilled in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.
Claims
1. A complementary metal oxide semiconductor device, characterized by, The device comprises: a substrate and a heating electrode arranged on a first surface of the substrate, the heating electrode being used for heating a complementary metal-oxide semiconductor (CMOS) device when a heating power source is connected thereto; an insulating layer formed on a second surface of the substrate; a self-repairing functional layer formed on the insulating layer, the self-repairing functional layer being used for self-repairing damage when the CMOS device is heated; a gate oxide layer formed on the self-repairing functional layer; a metal electrode layer formed on the gate oxide layer, a source and a drain in the metal electrode layer being connected to the self-repairing functional layer through the gate oxide layer.
2. The device of claim 1, wherein, The self-repairing functional layer has a thickness of [1, 30] nm.
3. The device of claim 1, wherein, The self-repairing functional layer is made of tin diselenide, antimony diselenide, indium diselenide or bismuth telluride.
4. The device according to any one of claims 1 to 3, characterized in that A region of the self-repairing functional layer under the source is a first through-hole structure, and the first through-hole structure is filled with a first contact electrode for connecting the source and the self-repairing functional layer. A region of the self-repairing functional layer under the drain is a second through-hole structure, and the second through-hole structure is filled with a second contact electrode for connecting the drain and the self-repairing functional layer. The device comprises:
5. A repair circuit, characterized by a current collecting module for collecting source-drain current of a complementary metal-oxide semiconductor (CMOS) device; a drift judging module connected to the current collecting module, for outputting a first level when a drift degree of the source-drain current exceeds a drift threshold; a control module connected to the drift judging module, a power on-off module and a heating power source, for cutting off working power of the CMOS device through the power on-off module and starting heating work of the heating power source when the first level is received, so that the CMOS device connected to the heating power source is self-repaired when heated. The CMOS device is any one of the devices in claims 1-4. The control module is further used for:
6. The repair circuit of claim 5, wherein, turning on the working power of the CMOS device through the power on-off module after self-repairing is completed; and updating the drift threshold used by the drift judging module according to source-drain current of the CMOS device after self-repairing. The current collecting module comprises:
7. The repair circuit of claim 5, wherein, a sampling resistor connected to a drain of the CMOS device, for converting the source-drain current into a first voltage signal, the first voltage signal being proportional to the source-drain current. The current collecting module further comprises:
8. The repair circuit of claim 7, wherein, an operational amplifier connected to the sampling resistor, for amplifying the first voltage signal into a second voltage signal. The drift judging module comprises:
9. The repair circuit of claim 8, wherein, a comparator, for outputting the first level when the second voltage signal is less than or equal to a reference voltage, and outputting a second level when the second voltage signal is greater than the reference voltage, the second level being different from the first level; wherein the reference voltage is determined according to the drift threshold. 10. The repair circuit of any one of claims 5 to 9, wherein, The control module is further configured to control the heating power supply to stop heating work after the heating power supply heats the CMOS device to a preset repair temperature and a temperature holding duration reaches a preset duration.