Copper-titanium-selenium alloy with intrinsic low thermal conductivity and preparation method thereof
By employing the processes of 'melting-programmed cooling-isothermal annealing' and 'high-energy ball milling', the problems of impurity phase formation and multiphase existence in the preparation of copper-titanium-selenide alloys were solved, enabling the preparation of rhombohedral and cubic phase copper-titanium-selenide alloys with low thermal conductivity, thus expanding their application in the field of thermal management.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-05
- Publication Date
- 2026-03-13
AI Technical Summary
Existing preparation methods are insufficient to achieve high-purity single rhombohedral and cubic phase copper-titanium-selenide alloys, resulting in limited material properties. Furthermore, the synthesis cycle is long and the process is cumbersome, with impurity phases easily forming, which affects the application potential of the material.
By employing a process combining 'melting-programmed cooling-isothermal annealing' and 'high-energy ball milling', the generation of impurity phases is suppressed by controlling the element melting and cooling processes, and phase transformation is induced by ball milling, thus achieving the preparation of pure rhombohedral and cubic phase copper-titanium-selenium alloys.
Low thermal conductivity rhombohedral and cubic copper-titanium-selenide alloys were successfully prepared, with room temperature thermal conductivity of 1.255 W·m⁻¹·K⁻¹ and 0.819 W·m⁻¹·K⁻¹, respectively, exhibiting low thermal conductivity across the entire temperature range, thus expanding their application potential in thermal management fields such as thermal insulation coatings.
Smart Images
Figure CN121651284A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of alloy technology, specifically relating to a copper-titanium-selenium alloy with intrinsically low thermal conductivity and its preparation method. Background Technology
[0002] The information disclosed in this background section is intended only to enhance understanding of the overall background of the invention and is not necessarily to be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art.
[0003] As high-end power equipment such as aero-engines and gas turbines increasingly demand higher thermal efficiency and thrust-to-weight ratios, the operating temperatures of their hot-end components are approaching the temperature limits of the materials, creating an urgent need for efficient thermal protection technologies. Thermal insulation coatings, as a key technology for solving this problem, depend directly on the thermal conductivity of the coating material for their performance.
[0004] Copper-titanium selenide (CTiSe) is a ternary compound composed of copper, titanium, and selenium. Theoretically, it exists in both rhombohedral and cubic crystal structures. Due to its low intrinsic thermal conductivity, this material shows significant application potential in thermal management fields such as insulating coatings. However, its practical development and performance research are severely constrained by existing preparation methods. First, reported preparation methods generally suffer from long synthesis cycles and cumbersome processes, and the products are prone to the presence of impurity phases such as TiSe2, which seriously affects the purity and performance of the material. Second, the existence of two crystal structures in CTiSe increases the difficulty of obtaining a single pure phase sample; currently, only the cubic phase has been experimentally synthesized, thus limiting the comprehensive exploration of the material's properties. Therefore, there is an urgent need to develop a method for the precise preparation of single pure phase rhombohedral and cubic CTiSe.
[0005] A study has disclosed a method for preparing indium-doped tin telluride thermoelectric materials with high power factors. This method leverages the ease of synthesis of the binary compound tin telluride, controlling intrinsic defects through doping and hot-pressing processes to balance the Seebeck coefficient and conductivity, thereby improving the power factor across the entire temperature range. Since this method targets the simple binary tin telluride system, a conventional "melt-quench" process with quenching as its core is employed. The aim is to achieve complete melting and compositional homogenization of the elements, followed by rapid cooling to form a supersaturated solid solution, ultimately obtaining a cubic tin telluride alloy ingot. However, the study does not address the issue of controllable preparation of high-purity rhombohedral and cubic copper-titanium-selenide phases. Summary of the Invention
[0006] To address the aforementioned problems, this invention provides a copper-titanium-selenium alloy with intrinsically low thermal conductivity and its preparation method. This invention designs a process combining "melting-programmed cooling-isothermal annealing" with "high-energy ball milling," aiming to achieve controllable preparation of rhombohedral and cubic phase copper-titanium-selenium alloys through a novel and selectable synthesis strategy.
[0007] To achieve the above objectives, the present invention adopts the following technical solution: In a first aspect, the present invention provides a method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity, comprising: Copper, titanium, and selenium are melted to prepare alloy ingots, which are then manually ground to obtain rhombohedral phase initial powder. The rhombohedral phase initial powder was pre-pressed and vacuum hot-pressed to obtain a rhombohedral phase copper-titanium-selenium alloy. Alternatively, the rhombohedral initial powder is ball-milled, and the ball-milled powder is pre-pressed and rapidly vacuum hot-pressed to obtain a cubic phase copper-titanium-selenium alloy.
[0008] The intrinsic low thermal conductivity of a material is usually closely related to its crystal structure and microstructure. For the copper-titanium selenide (CTiSe) system, achieving and verifying its intrinsic low thermal conductivity is a key challenge, directly determining the material's application potential and the value of its preparation process. Therefore, in a second aspect, this invention provides rhombohedral phase CTiSe alloys and cubic phase CTiSe alloys prepared by the above method. The rhombohedral phase CTiSe prepared by this invention exhibits excellent intrinsic thermal conductivity (1.255 W·m at room temperature). -1 ·K -1 The cubic copper-titanium selenide prepared by ball milling-induced phase transformation achieved a further breakthrough in thermal conductivity (0.819 W·m at room temperature). -1 ·K -1 This fully demonstrates that, based on successfully solving the synthesis problem, the technical solution of the present invention confirms the application potential of copper titanium selenide as an intrinsically low thermal conductivity material, providing new technical support for its application in the field of thermal management.
[0009] A third aspect of the present invention provides the application of the above-described rhombohedral phase copper-titanium-selenide alloy or cubic phase copper-titanium-selenide alloy in the field of thermal management.
[0010] Beneficial effects of the present invention (1) The rhombohedral phase copper-titanium-selenium alloy prepared by this invention has excellent low intrinsic thermal conductivity, with a thermal conductivity value of 1.255 W·m near room temperature. -1 ·K -1More importantly, the structural transformation from the rhombohedral phase to the cubic phase was successfully achieved through ball milling. The cubic copper-titanium-selenium alloy prepared by this invention achieves a further breakthrough in thermal conductivity, exhibiting an even lower thermal conductivity of 0.819 W·m near room temperature. -1 ·K -1 Meanwhile, the thermal conductivity of both rhombohedral and cubic copper-titanium-selenide alloys decreases with increasing temperature, exhibiting extremely low intrinsic thermal conductivity across the entire temperature range. Based on these outstanding low thermal conductivity characteristics, the rhombohedral and cubic copper-titanium-selenide alloys prepared in this invention, as high-performance, low-thermal-conductivity materials, have broad application prospects in thermal management fields such as thermal insulation coatings.
[0011] (2) This invention designs a process combining "melting-programmed cooling-isothermal annealing" and "high-energy ball milling". Specifically, after the elements are completely melted, they are slowly cooled to an intermediate temperature (about 973K) at a rate of 1 K / min, and held at this temperature for up to 120 hours, followed by natural cooling. The purpose is to provide sufficient long-range diffusion time for atoms, drive the reaction system towards thermodynamic equilibrium, suppress the precipitation of impurity phases such as TiSe2, and thus obtain a pure and stable single rhombohedral phase initial alloy ingot, laying the foundation for subsequent phase transformation control.
[0012] (3) This invention innovatively proposes a unique strategy of "one-step synthesis and dual-path processing": (a) Path 1 (obtaining rhombohedral phase): The synthesized rhombohedral phase initial alloy ingot is manually ground into powder and then directly hot-pressed and sintered to obtain a dense rhombohedral phase copper-titanium-selenium alloy.
[0013] (b) Path 2 (obtaining cubic phase): Based on the initial rhombohedral phase powder, a key "high-energy ball milling" method is introduced. This process is not a simple powder refinement, but rather uses mechanical alloying to induce a structural transformation of the initial rhombohedral phase into a cubic phase, and finally obtains a dense cubic phase copper-titanium-selenium alloy through hot pressing sintering. Attached Figure Description
[0014] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. Exemplary embodiments of the invention and their descriptions are used to explain the invention and do not constitute an improper limitation of the invention.
[0015] Figure 1 The diagram shows the crystal structures of the rhombohedral Cu4TiSe4 in Example 1 and the cubic Cu4TiSe4 in Example 2, with space groups R-3m and P-43m, respectively. Figure 2 X-ray diffraction patterns of rhombohedral Cu4TiSe4 from Example 1 and cubic Cu4TiSe4 from Example 2; Figure 3 Cross-sectional scanning electron microscope images and planar energy dispersive X-ray spectra of rhombohedral Cu4TiSe4 from Example 1 and cubic Cu4TiSe4 from Example 2. Figure 4 The thermal conductivity of the rhombohedral Cu4TiSe4 in Example 1 and the cubic Cu4TiSe4 in Example 2 is ( κ A graph showing how temperature changes the temperature. Figure 5 This is a comparison chart of the thermal conductivity of rhombohedral Cu4TiSe4 in Example 1 and cubic Cu4TiSe4 in Example 2 with the thermal conductivity of other materials. Detailed Implementation
[0016] It should be noted that the following detailed descriptions are exemplary and intended to provide further illustration of the invention. Unless otherwise specified, all technical and scientific terms used in this invention have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.
[0017] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of skill in the art. The reagents and raw materials used in this invention are readily available through conventional means, and unless otherwise specified, they are used in accordance with conventional methods in the art or product instructions. Similarly, unless otherwise specified, the test methods of this invention are performed in accordance with conventional methods in the art or industry-standard methods or practices. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to the methods of this invention. The preferred embodiments and materials described herein are for illustrative purposes only.
[0018] As described in the background section, copper titanium selenide theoretically exists in both rhombohedral and cubic crystal structures. However, experimentally, only the cubic phase has been synthesized to date, and the product often contains impurity phases. No reports have been found regarding the synthesis of the rhombohedral phase. The chemical properties and reactivity of Cu, Ti, and Se differ significantly. During conventional rapid melting and quenching processes, the diffusion rates of each element are mismatched, which easily leads to preferential local reactions between the more reactive Ti and Se, generating the thermodynamically stable TiSe2 impurity phase, resulting in an impure target product.
[0019] On the other hand, based on the successful synthesis of a single phase, how to selectively prepare a specific phase from the same Cu4TiSe4 component by adjusting process parameters is a challenge that has not yet been effectively solved.
[0020] This invention provides a method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity, comprising: Copper, titanium, and selenium are melted to prepare alloy ingots, which are then manually ground to obtain rhombohedral phase initial powder. The rhombohedral phase initial powder was pre-pressed and vacuum hot-pressed to obtain a rhombohedral phase copper-titanium-selenium alloy. Alternatively, the rhombohedral initial powder is ball-milled, and the ball-milled powder is pre-pressed and rapidly vacuum hot-pressed to obtain a cubic phase copper-titanium-selenium alloy.
[0021] Preferably, the melting is carried out under vacuum conditions at a pressure below 0.10 Pa.
[0022] Preferably, the melting conditions are as follows: heating to 853-903 K, holding at that temperature for 14-15 hours, heating again to 1403-1453 K, holding at that temperature for 120 hours, then cooling to 953-1003 K, holding at that temperature for 120 hours, and finally naturally cooling to 293-303 K. More preferably, the temperature is first slowly increased to 853-903 K at a rate of 0.5-1 K per minute and held at this temperature for 14-15 hours, then heated to 1403-1453 K at a rate of 1-2 K per minute and held at this temperature for 120 hours, then cooled to 953-1003 K at a rate of 1-2 K per minute and held at this temperature for 120 hours, and then naturally cooled to 293-303 K. The present invention provides near-equilibrium reaction conditions for the system through the above-mentioned "melting-programmed cooling-constant temperature annealing" process, which allows the three elements Cu, Ti and Se to have sufficient time to diffuse and react fully, thereby driving the chemical reaction toward the formation of a single, pure rhombohedral phase copper titanium selenide, and fundamentally suppressing the formation of impurity phases.
[0023] Preferably, the manual grinding time is 30-60 minutes.
[0024] Preferably, the pre-compression conditions are: pre-compression for 1-2 minutes under a uniaxial pressure of 20-30 MPa.
[0025] Preferably, before vacuum hot pressing sintering, the vacuum is evacuated to 10 Pa or below after pre-pressing.
[0026] The sintering process of this invention is determined based on the phase characteristics of different powders. For the rhombohedral phase, a conventional hot-pressing sintering process (approximately 873 K) is used; for the cubic phase obtained by ball milling, a rapid hot-pressing sintering process (approximately 773 K) is used. Preferably, the vacuum hot-pressing sintering conditions are as follows: under a uniaxial pressure of 50-60 MPa, the temperature is first slowly increased to 373 K-423 K, then increased to 873 K-923 K and held for 50-70 minutes to prepare a pure and stable single rhombohedral phase copper-titanium-selenide alloy. More preferably, after hot-pressing sintering, the vacuum pump is turned off and the pressure is removed when cooling to 473-523 K.
[0027] Preferably, the ball milling speed is 300-500 rpm and the ball milling time is 60-80 minutes. This invention innovatively designs the core method of "ball milling-induced phase transformation." Research has found that applying specific parameters (300-500 r / min, 60-80 min) to the initial rhombohedral phase powder during mechanical ball milling can disrupt its original crystal lattice and successfully induce its transformation into a cubic phase.
[0028] Preferably, before rapid vacuum hot pressing sintering, the pre-pressing conditions are: pre-pressing for 1-2 minutes under a uniaxial pressure of 20-30 MPa.
[0029] Preferably, before rapid vacuum hot pressing sintering, the vacuum is evacuated to 10 Pa or below after pre-pressing.
[0030] The sintering process of this invention is determined based on the phase characteristics of different powders. For the rhombohedral phase, a conventional hot-pressing sintering process (approximately 873 K) is used; for the cubic phase obtained by ball milling, a rapid hot-pressing sintering process (approximately 773 K) is used. Preferably, the conditions for the rapid vacuum hot-pressing sintering are: heating to 753-803 K and holding at that temperature for 30-40 minutes under a uniaxial pressure of 50-60 MPa. Experiments show that compared with conventional hot-pressing sintering, the rapid hot-pressing sintering scheme can significantly improve the synthesis success rate and structural integrity of the cubic phase. More preferably, after rapid hot-pressing sintering, the vacuum pump is turned off and the pressure is removed when cooling to 473-523 K.
[0031] More specifically, including: S1. Weigh copper, titanium and selenium according to the stoichiometric ratio of the chemical formula of copper-titanium-selenium alloy and put them into a quartz tube. Evacuate the quartz tube, seal it with an oxyhydrogen flame, and then place it in a quenching furnace to melt. S2. Take out the molten alloy ingot from the quartz tube and grind it thoroughly by hand in a mortar to obtain the initial rhombohedral phase powder; S3. Take the initial rhombohedral phase powder, directly load it into a graphite mold and place it in a hot press furnace. After pre-pressing, vacuum the furnace and pressurize it for hot pressing sintering. After hot pressing sintering, cool it to obtain the rhombohedral phase copper-titanium-selenium alloy. S4. Take the initial rhombohedral phase powder and ball mill it under inert gas protection. Then, take the ball-milled powder, put it into a graphite mold, place it in a rapid hot press furnace, pre-press it, then vacuum it, press it for hot pressing sintering, and cool it after hot pressing sintering to obtain the cubic phase copper-titanium-selenium alloy.
[0032] The present invention will be further described in detail below with reference to specific embodiments. It should be noted that the specific embodiments are explanations of the present invention and not limitations thereof.
[0033] Example 1 The rhombohedral phase copper-titanium-selenium alloy has the chemical formula Cu4TiSe4. Preparation method: Weigh 4.113868 g of copper (99.99% purity), 0.774708 g of titanium, and 5.111424 g of selenium and seal them in a vacuum quartz tube. Place the tube in a quenching furnace for melting. First, slowly heat the alloy from 323 K to 873 K at a rate of 0.8 K / min and hold for 14 hours. Then, heat the alloy to 1423 K within 340 minutes and hold for 120 hours. After that, cool the alloy to approximately 973 K at a rate of 1 K / min and hold at this temperature for 120 hours. Finally, allow it to cool naturally to 293 K. Remove the molten alloy ingot from the quartz tube and grind it thoroughly by hand in a mortar for 60 minutes. Take 1.5 g of the ground powder, place it in a graphite mold, and place it in a hot press furnace. Pre-press it for 1 minute under a uniaxial pressure of 20 MPa. After removing the pressure, turn on the vacuum pump to evacuate the air. When the pressure inside the equipment reaches 10 Pa, pressurize it to a uniaxial pressure of 60 MPa. Hot pressing sintering was initiated under a uniaxial pressure of 60 MPa. The temperature was first slowly increased to 373 K, then increased to 873 K within 30 minutes and held for 60 minutes. After the holding period, natural cooling was initiated. When the temperature dropped to 523 K, the vacuum pump was turned off and the pressure was removed. After cooling, a circular sample with a diameter of 12.7 mm and a thickness of 2.00 mm was finally obtained.
[0034] Example 2 Cubic phase copper-titanium-selenium alloy, with the chemical formula Cu4TiSe4; Preparation method: Weigh 4.113868 g of copper (99.99% purity), 0.774708 g of titanium, and 5.111424 g of selenium and seal them in a vacuum quartz tube. Place the tube in a quenching furnace for melting. First, slowly heat the alloy from 323 K to 873 K at a rate of 0.8 K / min and hold for 14 hours. Then, heat the alloy to 1423 K over 340 minutes and hold for 120 hours. After that, cool the alloy to approximately 973 K at a rate of 1 K / min and hold at this temperature for 120 hours. Finally, allow it to cool naturally to 303 K. Remove the molten alloy ingot from the quartz tube and grind it thoroughly by hand in a mortar for 60 minutes. Place the ground powder into a ball mill jar under an argon atmosphere and ball mill it at 500 rpm for 60 minutes. Take 1.5 g of the ball-milled powder, place it in a graphite mold, and pre-press it in a rapid hot press furnace under a uniaxial pressure of 20 MPa for 1 minute. After releasing the pressure, the vacuum pump was turned on to evacuate the air. When the internal pressure reached 10 Pa, the pressure was increased to a uniaxial pressure of 50 MPa. Rapid hot pressing sintering was then initiated while maintaining the uniaxial pressure at 50 MPa. The temperature was slowly raised to 773 K and held for 30 minutes. After the holding period, natural cooling was initiated. When the temperature dropped to 473 K, the vacuum pump was turned off and the pressure was released. After cooling, a circular sample with a diameter of 12.7 mm and a thickness of 2.08 mm was finally obtained.
[0035] like Figure 1 As shown, the crystal structures of rhombohedral Cu4TiSe4 and cubic Cu4TiSe4 are illustrated.
[0036] like Figure 2 As shown, based on the X-ray diffraction patterns and crystal plane indexing results of the products of Examples 1 and 2, it was confirmed that rhombohedral Cu4TiSe4 and cubic Cu4TiSe4 were successfully synthesized respectively.
[0037] like Figure 3 As shown, the rhombohedral Cu4TiSe4 prepared in Example 1 exhibits a layered stacked morphology, while the cubic Cu4TiSe4 prepared in Example 2 shows a typical porous bulk morphology. Energy dispersive spectroscopy (EDS) elemental distribution analysis shows that Cu, Ti, and Se in both phases exhibit a spatially uniform distribution, and no obvious elemental segregation or phase separation was observed.
[0038] like Figure 4As shown, both the rhombohedral Cu4TiSe4 and cubic Cu4TiSe4 prepared in this invention exhibit excellent thermal transport properties. Test results show that both have low room temperature thermal conductivity, and the thermal conductivity decreases with increasing temperature. The cubic Cu4TiSe4 exhibits particularly outstanding low thermal conductivity, with values significantly lower than the rhombohedral phase throughout the entire test temperature range. This low thermal conductivity indicates that this material has great application potential in thermal management fields such as thermal insulation coatings.
[0039] like Figure 5 As shown, the rhombohedral and cubic Cu₄TiSe₄ phases prepared in Examples 1 and 2 of this invention exhibit a concentration of 1.255 W·m⁻¹ at room temperature. -1 ·K -1 and 0.819 W·m -1 ·K -1 It has a relatively low thermal conductivity. As temperature increases, the thermal conductivity further decreases, reaching approximately 0.702 W·m at around 720 K. -1 ·K -1 and 0.512 W·m -1 ·K -1 Compared to typical alloys in the prior art, the Cu4TiSe4 prepared in this invention exhibits lower thermal conductivity across the entire temperature range, with the cubic phase Cu4TiSe4 showing particularly high thermal conductivity. These results demonstrate the significant application potential of the Cu4TiSe4 material developed in this invention in thermal insulation coatings.
[0040] Figure 5 Other materials disclosed in the prior art for comparison and their sources are shown in Table 1.
[0041] Table 1. Sources of other materials disclosed in the prior art
[0042] Comparative Example 1 The difference from Example 1 is that the process of "cooling down to about 973 K at a rate of 1 K per minute and holding at this temperature for 120 hours" is omitted, and the sample is directly cooled to 293 K by natural cooling.
[0043] The results show that omitting the "programmed cooling-isothermal annealing" step will prevent the preparation of a pure rhombohedral phase copper-titanium-selenide alloy. This step is crucial for overcoming the reaction rate mismatch among elements in the Cu-Ti-Se ternary system and suppressing the formation of various impurity phases (including but not limited to TiSe2). By providing sufficient thermodynamic equilibrium conditions, it ensures the directional reaction and the acquisition of a single target phase. If the conventional melt-and-natural cooling process is used, omitting this step, a multiphase system dominated by multiple impurity phases will inevitably form in the product, leading to a significant deterioration in crystallinity and phase purity. Due to the influence of the high thermal conductivity impurity phase, the room temperature thermal conductivity of this multiphase material will increase significantly to 2.5 W·m. -1 ·K -1 The above is consistent with the pure phase sample of the present invention (1.255 W·m). -1 ·K -1 A significant difference was observed. This comparative result confirms the necessity of the "programmed cooling-constant temperature annealing" process as the core technical feature of this invention and its decisive contribution to the final material properties.
[0044] Comparative Example 2 The difference from Example 2 is that the "ball milling treatment" is omitted.
[0045] The results show that cubic phase copper-titanium-selenide alloys cannot be prepared without omitting the "ball milling" step. In the technical solution of this invention, the cubic phase is obtained by inducing a structural transformation of the rhombohedral phase through the key step of "high-energy ball milling". Comparative experimental data confirms that cubic phase copper-titanium-selenide alloys can be obtained by ball milling and hot pressing of the same initial rhombohedral phase powder, with a room temperature thermal conductivity of 0.819 W·m. -1 ·K -1 If ball milling is omitted and hot pressing is performed directly, a rhombohedral phase copper-titanium-selenium alloy is obtained, with a room temperature thermal conductivity of 1.255 W·m. -1 ·K -1 Therefore, "ball milling" is an indispensable step in the preparation of cubic phases, which further demonstrates the uniqueness and non-obviousness of the process design of this invention.
[0046] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.
Claims
1. A method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity, characterized in that, include: Copper, titanium, and selenium are melted to prepare alloy ingots, which are then manually ground to obtain rhombohedral phase initial powder. The rhombohedral phase initial powder was pre-pressed and vacuum hot-pressed to obtain a rhombohedral phase copper-titanium-selenium alloy. Alternatively, the rhombohedral initial powder is ball-milled, and the ball-milled powder is pre-pressed and rapidly vacuum hot-pressed to obtain a cubic phase copper-titanium-selenium alloy.
2. The method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity as described in claim 1, characterized in that, The melting is carried out under vacuum conditions at a pressure below 0.10 Pa.
3. The method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity as described in claim 1, characterized in that, The melting conditions are as follows: heat to 853-903 K, hold for 14-15 hours, heat again to 1403-1453 K, hold for 120 hours, then cool down to 953-1003 K, hold for 120 hours, and finally cool naturally to 293-303 K.
4. The method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity as described in claim 1, characterized in that, The manual grinding time is 30-60 minutes.
5. The method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity as described in claim 1, characterized in that, The pre-compression conditions are: pre-compression for 1-2 minutes under a uniaxial pressure of 20-30 MPa.
6. The method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity as described in claim 1, characterized in that, The conditions for vacuum hot pressing sintering are as follows: under a uniaxial pressure of 50-60 MPa, the temperature is first slowly increased to 373 K-423 K, then increased to 873 K-923 K and held for 50-70 minutes.
7. The method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity as described in claim 1, characterized in that, The ball milling speed is 300-500 rpm, and the ball milling time is 60-80 minutes.
8. The method for preparing a copper-titanium-selenium alloy with intrinsically low thermal conductivity as described in claim 1, characterized in that, The conditions for rapid vacuum hot pressing sintering are as follows: under a uniaxial pressure of 50-60 MPa, the temperature is raised to 753-803 K and held for 30-40 minutes.
9. The rhombohedral phase copper-titanium-selenide alloy or cubic phase copper-titanium-selenide alloy prepared by the method according to any one of claims 1-8.
10. The application of the rhombohedral phase copper-titanium-selenide alloy or cubic phase copper-titanium-selenide alloy according to claim 9 in the field of thermal management.