Micro-range integrated beam arm structure, micro-melting pressure sensor and manufacturing method

Abstract

The invention belongs to the technical field of pressure sensors, and discloses a micro-range integrated beam arm structure, a micro-melting pressure sensor and a manufacturing method.The micro-range integrated beam arm structure comprises an edge fixing part, an arm beam and a diaphragm, a sunken structure is formed in the bottom of the edge fixing part, the arm beam is located at the top of the edge fixing part, and the diaphragm is located at the bottom of the edge fixing part; the diaphragm extends from the edge fixing part to the center, is located at the top of the sunken structure, is used for sensing the pressure of a measured medium and is connected with the arm beam through a supporting column, and the supporting column is located at the bottom of the arm beam; according to the invention, the glass micro-melting sensor has 100 kPa micro-range measurement capability, micro-range pressure measurement of the micro-melting sensor in the semiconductor industry is developed, meanwhile, the external stress resistance of the micro-range glass micro-melting sensor can be improved, the hysteresis and repeatability of the sensor can be obviously improved, and the comprehensive precision of the sensor is improved from 0.5% to 0.3%.

Description

Technical Field

[0001] This invention relates to the field of pressure sensor technology, specifically to an integrated beam arm structure with a small range, a micro-melting pressure sensor, and a manufacturing method thereof. Background Technology

[0002] As a precision pressure measurement tool, the glass micro-fusion pressure sensor is manufactured using advanced micro-fusion technology. A robust glass layer is formed by sintering glass adhesive at high temperatures, which is then tightly bonded to the surface of the sensor's elastomer with a silicon strain gauge. This unique structure allows the sensor to accurately convert external pressure into an electrical signal, thus enabling precise pressure measurement.

[0003] Silicon strain gauges require differential signal output, which necessitates sufficient stress from the sensor elastomer. This elastomer primarily generates concentrated stress through diaphragm deformation; the lower the pressure, the thinner the diaphragm needs to be. Simultaneously, silicon strain gauges are highly sensitive to stress in all directions. Due to the inevitable stress generated during the welding and installation of the sensor elastomer, this stress directly affects the differential signal output by the silicon strain gauge, thereby influencing the output of the glass micro-fuse sensor and causing output drift.

[0004] However, due to limitations in the processing of ultrathin films and drift caused by external stress, there are currently no micro-fuse sensors with ultra-small ranges in the semiconductor industry. The smallest range of micro-fuse sensors can currently reach 1.6 MPa (accuracy 0.5%), and the maximum normal force at the GAGE ​​is approximately +40 MPa and -40 MPa. With current processing technology, even the thinnest 0.2 mm diaphragm, without changing the diameter of the pressure inlet, can only generate a maximum normal force of +3 MPa and -3 MPa after being subjected to 100 kPa of pressure. This is completely insufficient to generate a sufficient differential signal from the GAGE ​​to achieve the measurement of small-range pressure.

[0005] Therefore, there is an urgent need for a new technology that can solve the problem of the lack of small-range dry cavity sensors resistant to external stress interference in the semiconductor industry. Summary of the Invention

[0006] The purpose of this invention is to provide an integrated beam arm structure with a small range, a micro-fused pressure sensor, and a manufacturing method to overcome the problems existing in the prior art. This invention enables the glass micro-fused sensor to have the ability to measure small ranges (100kPa), opening up the application of micro-fused sensors in the semiconductor industry for pressure measurement with small ranges. At the same time, it can improve the resistance of the small-range glass micro-fused sensor to external stress, and can also significantly improve the sensor's hysteresis and repeatability, increasing the overall accuracy of the sensor from 0.5% to 0.3%.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides an integral beam arm structure with a small range, comprising: An edge fixing part, wherein a recessed structure is formed inside the bottom of the edge fixing part; An arm beam is located at the top of the edge fixing part and extends from the edge fixing part toward the center; A diaphragm, located at the top of the recessed structure, is used to sense the pressure of the measured medium. The diaphragm is connected to the arm beam via a support column located at the bottom of the arm beam.

[0008] According to one embodiment of the present invention, support platforms are fixed at both ends of the bottom of the arm beam, the bottom of the support platform is fixedly connected to the edge fixing part, and the support column is located between the two support platforms.

[0009] According to one embodiment of the present invention, the two support platforms are arranged symmetrically.

[0010] According to one embodiment of the present invention, the support column forms a bridge-shaped pressure cavity between each of the two support platforms.

[0011] According to one embodiment of the present invention, the two bridge-shaped pressure chambers are symmetrically arranged.

[0012] According to one embodiment of the present invention, the edge fixing part includes a stress plate fixedly connected to the bottom of the support platform, and the bottom of the stress plate is fixedly connected to the lower edge of the sensor; The stress plate is coaxially arranged with the lower edge of the sensor and has a recessed structure inside.

[0013] Secondly, the present invention also provides a micro-melting pressure sensor with a small range, based on an integrated beam-arm structure with the small range, comprising: Sensor base; A circuit board support is disposed on top of the sensor base; An integrated beam arm structure is disposed on the top of the sensor base, and the integrated beam arm structure is located inside the circuit board support base; Several glass substrates are disposed on the surface of the arm beam, and a silicon strain gauge is fixed on each glass substrate by a glass micro-melting process; The circuit board is connected to the top of the circuit board support base, and the circuit board is connected to the silicon strain gauge to form a Wheatstone bridge.

[0014] Thirdly, the present invention also provides a method for manufacturing a micro-melt pressure sensor with a small range, the method comprising the following steps: Step 1: After screen printing the glass slurry onto the surface of the integrated beam arm structure, perform the first high-temperature sintering and install several glass substrates on the beam arm after high-temperature sintering. Step 2: After attaching the silicon strain gauge to each glass substrate, perform a second high-temperature sintering to allow the silicon strain gauge to be micro-melted onto the glass substrate; Step 3: Fix the integrated beam arm structure to the sensor base by laser welding, and then fix the circuit board support base to the sensor base by laser welding. Step 4: Attach the circuit board to the circuit board support base, and then connect the circuit board to the silicon strain gauge through a bonding process to form a Wheatstone bridge, thus completing the manufacturing of the micro-fused pressure sensor.

[0015] According to one embodiment of the present invention, the temperature of the first high-temperature sintering is 400℃~450℃, and the time of the first high-temperature sintering is 1.5-2.5h.

[0016] According to one embodiment of the present invention, the temperature of the second high-temperature sintering is 390°C to 440°C, and the time of the second high-temperature sintering is 0.5-1.5h.

[0017] The above technical solution has the following advantages or beneficial effects: Firstly, this invention provides an integrated beam-arm structure for small-range pressure measurement. Through innovative design of this integrated beam-arm structure, this invention successfully achieves a breakthrough in the field of small-range (100 kPa) pressure measurement using glass micro-fusion sensors. This structure utilizes the beam arm and diaphragm connected by a support column, effectively amplifying the sensor output signal to the normal detection range without the need for an ultra-thin film sheet, significantly improving the applicability of micro-fusion sensors for small pressure measurement in high-end fields such as semiconductors. Simultaneously, the beam-arm structure forms a stress isolation layer between the silicon strain gauge and the external welding / installation parts, greatly reducing the interference of external stress on the measurement and enhancing the stability and resistance to external stress of the sensor under small-range pressure. The overall structure is compact and reliable, expanding the application range and measurement accuracy of glass micro-fusion sensors, significantly improving sensor hysteresis and repeatability, and increasing the overall sensor accuracy from 0.5% to 0.3%.

[0018] In some embodiments, the support platform structure of the present invention further optimizes the mechanical properties of the integrated beam arm. By setting support platforms at both ends of the bottom of the beam arm and fixing them to the edge fixing part, the displacement at both ends of the beam arm is effectively constrained, so that the deformation is concentrated in the middle stress area, thereby improving the linearity and sensitivity of the sensing structure. The design of the support column located between the two support platforms more accurately transmits the pressure on the diaphragm to the effective part of the beam arm with the greatest deformation, optimizes the force transmission path, and reduces signal loss. This layout enhances the overall structural rigidity and stability while ensuring that small pressure can be converted into elastic deformation of the beam arm more efficiently, further improving the measurement accuracy and reliability of the sensor in small ranges such as 100 kPa.

[0019] In some embodiments, the symmetrical layout of the support platform ensures balanced force on the arm beam, resulting in symmetrical and stable deformation. This effectively suppresses lateral interference and nonlinear errors, further improving the accuracy and reliability of small-range measurements.

[0020] In some embodiments, the bridge-shaped pressure cavity formed by the support column and the two side support platforms provides a stable and undisturbed deformation space for the arm beam, optimizing the stress transmission path. This structure effectively isolates the interference of the stress at the fixed end of the support platform on the sensitive area, ensuring that the small pressure can drive the arm beam more concentratedly and linearly, significantly improving the measurement accuracy and anti-interference capability of the sensor in small ranges.

[0021] In some embodiments, the symmetrical bridge-shaped pressure chamber ensures that the mechanical environment on both sides of the boom beam is consistent, eliminating the influence of off-center loading, making the pressure transmission more balanced and linear, and significantly improving the measurement accuracy and stability under small ranges.

[0022] In some embodiments, the stress plate serves as a key intermediary structure, precisely aligned with the lower edge of the sensor through a coaxial design. Its internal recess, in conjunction with the upper beam arm, forms a pressure cavity, which can efficiently collect and transmit the pressure sensed by the diaphragm. This structure can effectively absorb and disperse external installation stress, significantly reducing its interference with the upper precision beam arm system, thereby fundamentally improving the zero-point stability and overall overload resistance of the sensor in small ranges.

[0023] Secondly, this invention provides a micro-melted pressure sensor with a small range. This micro-melted pressure sensor, by integrating the aforementioned integrated beam-arm structure, successfully realizes the high-performance application of glass micro-melting technology in the measurement of small-range pressure (such as 100 kPa). The unique beam-arm structure, as the core force-sensitive element, efficiently amplifies the small pressure and converts it into significant deformation of the beam arm without relying on the ultra-thin film. The glass substrate arranged on the beam arm and the silicon strain gauge form a stable connection through the glass micro-melting process, ensuring the stability and reliability of signal transmission. Finally, the Wheatstone bridge composed of strain gauges converts the deformation into a high-sensitivity electrical signal output. The entire sensor structure is compact and rigid, which not only greatly expands the lower limit of measurement, but also effectively resists installation stress and external interference due to its inherent stress isolation design, significantly improving the measurement accuracy and long-term stability in precision industrial scenarios such as semiconductors.

[0024] Thirdly, this invention provides a method for manufacturing a micro-fused pressure sensor with a small range. This method reliably achieves the precision manufacturing of a high-performance micro-fused pressure sensor through an optimized process sequence. First, screen printing and two high-temperature sintering processes are used to ensure a high-strength, low-stress micro-fused connection between the glass substrate, the integrated beam arm structure, and the silicon strain gauge, laying the foundation for the stable transmission of small pressure signals. Subsequently, the core sensing unit (integrated beam arm structure) and the external mechanical structure (base, support) are precisely and firmly assembled through laser welding, minimizing the interference of thermal effects and assembly stress on the sensitive core. Finally, the circuit connection is completed through a bonding process to construct a high-sensitivity Wheatstone bridge. The entire process integrates the reliability of micro-fused technology with the precision of laser welding, ensuring that the sensor has excellent small-range measurement capabilities while also endowing it with excellent long-term stability and environmental robustness.

[0025] In some embodiments, the first high-temperature sintering within this temperature and time window ensures that the glass slurry fully melts and flows and forms a dense, robust, and extremely low-stress transition layer with the beam arm structure substrate, laying a crucial foundation for subsequent micro-melting processes.

[0026] In some embodiments, the parameter settings for the second high-temperature sintering can effectively control thermal stress while ensuring reliable micro-fusion bonding between the silicon strain gauge and the glass substrate, avoiding damage to the formed structure, and ensuring the long-term stability and sensitivity of the sensor. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of a small-range integral beam arm structure according to some embodiments of this specification; Figure 2 This is a cross-sectional view of a small-range integral beam arm structure according to some embodiments of this specification; Figure 3 This is a schematic diagram of the micro-fusible pressure sensor structure shown in some embodiments according to this specification; Figure 4 This is a schematic diagram of the normal force analysis of the diaphragm under full pressure. Figure 5 This is a schematic diagram of the normal force analysis of the boom beam under full load. In all the accompanying drawings, the same reference numerals denote the same technical features, specifically: 1. Beam arm; 2. Support column; 3. Support platform; 4. Diaphragm; 5. Stress disc; 6. Lower edge of sensor; 7. Sensor base; 8. Circuit board support; 9. Integrated beam arm structure; 10. Glass substrate; 11. Silicon strain gauge; 12. Circuit board. Detailed Implementation

[0028] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of the invention. Therefore, the drawings and description are considered to be exemplary in nature and not restrictive.

[0029] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0031] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0032] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] Example 1: This embodiment provides a small-range integrated beam-arm structure, see [link / reference]. Figure 1 and Figure 2 It includes: edge fixing part, arm beam 1, diaphragm 4, support column 2 and arm beam 1; The bottom interior of the edge fixing part forms a recessed structure; the arm beam 1 is located at the top of the edge fixing part and extends from the edge fixing part towards the center; the diaphragm 4 is located at the top of the recessed structure and is used to sense the pressure of the measured medium. The diaphragm 4 is connected to the arm beam 1 through the support column 2, and the support column 2 is located at the bottom of the arm beam 1.

[0035] In some embodiments, support platforms 3 are fixed at both ends of the bottom of the arm beam 1, the bottom of the support platform 3 is fixedly connected to the edge fixing part, and the support column 2 is located between the two support platforms 3.

[0036] In some embodiments, the two support platforms 3 are arranged symmetrically.

[0037] In some embodiments, the support column 2 forms a bridge-shaped pressure cavity between each of the two support platforms 3.

[0038] In some embodiments, the two bridge-shaped pressure chambers are symmetrically arranged.

[0039] In some embodiments, the edge fixing part includes a stress plate 5 fixedly connected to the bottom of the support platform 3, and the bottom of the stress plate 5 is fixedly connected to the lower edge 6 of the sensor; The stress plate 5 is coaxially arranged with the lower edge 6 of the sensor, and has a recessed structure inside.

[0040] Example 2: This embodiment provides a micro-melting pressure sensor with a very small range. See [link to documentation]. Figure 3 The integrated beam arm structure based on the small range includes a sensor base 7, a circuit board support 8, an integrated beam arm structure 9, a glass substrate 10, a silicon strain gauge 11, and a circuit board 12. A circuit board support 8 is disposed on the top of the sensor base 7; an integrated beam arm structure 9 is disposed on the top of the sensor base 7, and the integrated beam arm structure 9 is located inside the circuit board support 8; a plurality of glass substrates 10 are disposed on the surface of the arm beam 1, and a silicon strain gauge 11 is fixed on each glass substrate 10 by a glass micro-melting process; a circuit board 12 is connected to the top of the circuit board support 8, and the circuit board 12 is connected to the silicon strain gauge 11 to form a Wheatstone bridge.

[0041] In some embodiments, the integrated beam arm structure 9 may also be referred to as a beam arm sensor elastomer; the circuit board 12 may also be referred to as a circuit board.

[0042] The structure and working principle of the present invention will be further explained below: The micro-melting pressure sensor with a small range shown in some embodiments of this specification, when used to measure pressure, has the back of the diaphragm 4 in contact with the measured medium, responsible for sensing the pressure of the measured medium. The pressure of the measured medium is transmitted to the beam arm 1 through the support column 2. The beam arm 1 has a glass body 10 and a silicon strain gauge 11 sintered thereon. The generated stress is finally transmitted to the silicon strain gauge 11, providing a signal output for the sensor. The lower edge 6 of the sensor is connected to the sensor base 7 by laser welding and sealed. The stress plate 5 and the support platform 3 provide stress isolation for the sensor, reducing the influence of the stress at the lower installation and welding points on the silicon strain gauge 11.

[0043] Example 3: This embodiment provides a method for manufacturing a micro-melted pressure sensor with a small range, which includes the following steps: Step 1: After printing the glass slurry onto the surface of the integrated beam arm structure 9 by screen printing, the glass slurry is sintered at 425°C for 2 hours to solidify. Several glass substrates 10 are then installed on the beam arm 1 after high-temperature sintering. Step 2: After attaching the silicon strain gauge 11 to each glass substrate 10, perform a second high-temperature sintering at 410°C for 1 hour to allow the silicon strain gauge 11 to be micro-melted onto the surface of the glass substrate 10. Step 3: Fix the integrated beam arm structure 9 to the sensor base 7 by laser welding, and then fix the circuit board support 8 to the sensor base 7 by laser welding. Step four: Attach the circuit board 12 to the circuit board support 8, and then connect the circuit board 12 to the silicon strain gauge 11 through a bonding process to form a Wheatstone bridge, thus completing the manufacturing of the micro-molded pressure sensor.

[0044] Example 4: This embodiment provides a method for manufacturing a micro-melted pressure sensor with a small range, which includes the following steps: Step 1: After printing the glass slurry onto the surface of the integrated beam arm structure 9 by screen printing, perform a first high-temperature sintering at 400℃ for 2.5 h to solidify the glass slurry, and then install several glass substrates 10 on the beam arm 1 after high-temperature sintering. Step 2: After attaching the silicon strain gauge 11 to each glass substrate 10, perform a second high-temperature sintering at 390°C for 1.5 hours to allow the silicon strain gauge 11 to be micro-melted onto the surface of the glass substrate 10. Step 3: Fix the integrated beam arm structure 9 to the sensor base 7 by laser welding, and then fix the circuit board support 8 to the sensor base 7 by laser welding. Step four: Attach the circuit board 12 to the circuit board support 8, and then connect the circuit board 12 to the silicon strain gauge 11 through a bonding process to form a Wheatstone bridge, thus completing the manufacturing of the micro-molded pressure sensor.

[0045] Example 5: This embodiment provides a method for manufacturing a micro-melted pressure sensor with a small range, which includes the following steps: Step 1: After printing the glass slurry onto the surface of the integrated beam arm structure 9 by screen printing, perform a first high-temperature sintering at 450°C for 1.5 h to solidify the glass slurry, and then install several glass substrates 10 on the beam arm 1 after high-temperature sintering. Step 2: After attaching the silicon strain gauge 11 to each glass substrate 10, perform a second high-temperature sintering at 440℃ for 0.5h to allow the silicon strain gauge 11 to be micro-melted onto the surface of the glass substrate 10. Step 3: Fix the integrated beam arm structure 9 to the sensor base 7 by laser welding, and then fix the circuit board support 8 to the sensor base 7 by laser welding. Step four: Attach the circuit board 12 to the circuit board support 8, and then connect the circuit board 12 to the silicon strain gauge 11 through a bonding process to form a Wheatstone bridge, thus completing the manufacturing of the micro-molded pressure sensor.

[0046] This specification provides experimental data to demonstrate that the micro-melt pressure sensor of Example 2, manufactured in Examples 3-5, can achieve pressure measurement with a small range (100 kPa), improve the sensor's resistance to external stress, and significantly improve the sensor's hysteresis and repeatability, increasing the sensor's overall accuracy from 0.5% to 0.3%. Experimental conditions: (1) Connect the sensor to the transmitter board, assemble it into a transmitter with 24V power supply and 4mA-20mA output, and calibrate the transmitter according to the range of 0 kPa-100 kPa.

[0047] (2) Test the current output of the transmitter at five points (0 kPa, 25 kPa, 50 kPa, 75 kPa, 100 kPa) under high and low temperature (-10℃, 0℃, 30℃, 50℃, 70℃, 80℃) and three cycles (zero...full...zero...full...zero...full).

[0048] (3) Record and calculate the overall accuracy of the transmitter, as shown in the table below: Table 1 Summary of Transmitter Overall Accuracy

[0049] Table 2 Summary of Specific Accuracy Data for -10℃

[0050] Table 3 Summary of Specific Accuracy Data at 0℃

[0051] Table 4 Summary of Specific Accuracy Data at 30℃

[0052] Table 5 Summary of Specific Accuracy Data at 50℃

[0053] Table 6 Summary of Specific Accuracy Data at 70℃

[0054] Table 7 Summary of Specific Accuracy Data at 80℃

[0055] As can be seen from Tables 1-7, the overall accuracy of all five transmitters across the entire temperature range (-10℃ to 80℃) can reach 0.3%.

[0056] Currently, the smallest range (1.6MPa) micro-fuse sensor experiences a maximum normal force of approximately +40MPa and -40MPa at the GAGE. With current manufacturing technology, even the thinnest 0.2mm diaphragm, without changing the pressure inlet diameter, can only generate a maximum normal force of +3MPa and -3MPa after being subjected to 100kPa of pressure. This is completely insufficient to generate a sufficient differential signal at the GAGE ​​to achieve the measurement of small-range pressure.

[0057] See Figure 4 and Figure 5 This invention enlarges the sensor pressure inlet and adds an integrated beam arm structure to the upper part of the sensor. Without requiring an ultra-thin film sheet, all the stress sensed on the diaphragm 4 is concentrated on the cantilever arm 1, amplifying the output of the micro-fusion sensor with a small range, making it applicable to pressure measurement with a small range (100 kPa) in the semiconductor industry. Furthermore, the cantilever arm 1 structure increases the structural isolation between the silicon strain gauge 11 and the sensor welding / mounting point, improving the sensor's resistance to external stress. At the same time, this structural design significantly improves the sensor's hysteresis and repeatability, increasing the sensor's overall accuracy from 0.5% to 0.3%.

[0058] This invention enables glass micro-fuse sensors to measure pressure within a small range (100 kPa), opening up new possibilities for micro-fuse sensors in the semiconductor industry for pressure measurement within this range. It solves the current problem in the semiconductor industry of lacking dry cavity sensors with resistance to external stress interference within a small range (100 kPa). Furthermore, because glass micro-fuse sensors are highly sensitive to external stress, especially in the small range, this invention utilizes a beam-arm structure to add a layer of structural isolation at the welding / installation point between the silicon strain gauge and the sensor, significantly improving the stress resistance of the small-range glass micro-fuse sensor. This invention also provides a method for manufacturing a small-range micro-fuse pressure sensor. Through structural design, the position of the silicon strain gauge is kept consistent with that of conventional micro-fuse sensors, expanding the usable range of the micro-fuse sensor while facilitating production and assembly.

[0059] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the above embodiments should be considered exemplary rather than restrictive in all respects; the scope of protection of the present invention is defined by the appended claims, not by the foregoing description, and thus all changes falling within the meaning and scope of the equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0060] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity; those skilled in the art should consider the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art. The above content is merely illustrative of the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solutions based on the technical concept proposed in this invention fall within the scope of protection of the claims of this invention.

Claims

1. A micro-range integrated beam-arm structure, characterized in that, include: An edge fixing part, wherein a recessed structure is formed inside the bottom of the edge fixing part; The arm beam (1) is located at the top of the edge fixing part and extends from the edge fixing part toward the center; A diaphragm (4) is located at the top of the recessed structure and is used to sense the pressure of the measured medium. The diaphragm (4) is connected to the arm beam (1) through a support column (2), which is located at the bottom of the arm beam (1).

2. The integrated beam-arm structure with a small range according to claim 1, characterized in that, The bottom ends of the arm beam (1) are respectively fixed with support platforms (3), the bottom of the support platform (3) is fixedly connected to the edge fixing part, and the support column (2) is located between the two support platforms (3).

3. The integrated beam-arm structure with a small range according to claim 2, characterized in that, The two support platforms (3) are symmetrically arranged.

4. The integrated beam-arm structure with a small range according to claim 2, characterized in that, The support column (2) forms a bridge-shaped pressure cavity between each of the two support platforms (3).

5. The integrated beam-arm structure with a small range according to claim 4, characterized in that, The two bridge-shaped pressure chambers are arranged symmetrically.

6. The integrated beam-arm structure with a small range according to claim 2, characterized in that, The edge fixing part includes a stress plate (5) fixedly connected to the bottom of the support platform (3), and the bottom of the stress plate (5) is fixedly connected to the lower edge (6) of the sensor. The stress plate (5) is coaxially arranged with the lower edge (6) of the sensor, and has a recessed structure inside.

7. A micro-melt pressure sensor with a small range, characterized in that, The integral beam-arm structure based on any one of claims 1-6 with a small range includes: Sensor base (7); A circuit board support (8) is disposed on top of the sensor base (7); An integrated beam arm structure (9) is disposed on the top of the sensor base (7), and the integrated beam arm structure (9) is located inside the circuit board support (8); Several glass substrates (10) are disposed on the surface of the arm beam (1), and a silicon strain gauge (11) is fixed on each glass substrate (10) by a glass micro-melting process. The circuit board (12) is connected to the top of the circuit board support (8), and the circuit board (12) is connected to the silicon strain gauge (11) to form a Wheatstone bridge.

8. A method for manufacturing a micro-melt pressure sensor with a small range, characterized in that, The micro-melting pressure sensor based on the small range of claim 7 includes the following steps: After the glass slurry is printed onto the surface of the integrated beam arm structure (9) by screen printing, a first high-temperature sintering is performed, and several glass substrates (10) are installed on the beam arm (1) after high-temperature sintering. After attaching the silicon strain gauge (11) to each glass substrate (10), a second high-temperature sintering is performed to make the silicon strain gauge (11) micro-melt onto the glass substrate (10); The integrated beam arm structure (9) is fixed to the sensor base (7) by laser welding, and then the circuit board support (8) is fixed to the sensor base (7) by laser welding. The circuit board (12) is bonded to the circuit board support (8), and then the circuit board (12) is connected to the silicon strain gauge (11) through the bonding process to form a Wheatstone bridge, thus completing the manufacturing of the micro-molded pressure sensor.

9. A method for manufacturing a micro-range micro-melting pressure sensor according to claim 8, characterized in that, The temperature of the first high-temperature sintering is 400℃~450℃, and the time of the first high-temperature sintering is 1.5-2.5 h.

10. A method for manufacturing a micro-range micro-molded pressure sensor according to claim 8, characterized in that, The second high-temperature sintering temperature is 390℃~440℃, and the second high-temperature sintering time is 0.5-1.5 h.

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