Atomic force microscopic testing method for barrier effect of multilayer dielectric charge interface
By obtaining the potential map of multilayer dielectric samples using atomic force microscopy, the destructive problem in testing the potential distribution at the interface of multilayer materials was solved, and accurate charge blocking performance analysis was achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-05
- Publication Date
- 2026-03-13
AI Technical Summary
Existing techniques are prone to material damage when characterizing the potential distribution at the interface of multilayer materials, which affects the accuracy of test results.
Atomic force microscopy was used to obtain the pre- and post-charge potential maps of the target side surface of a multilayer dielectric sample using a probe, and the interfacial charge blocking performance was analyzed.
Accurately determine the charge blocking effect of multilayer dielectric samples to avoid material damage and improve the accuracy of test results.
Smart Images
Figure CN121656598A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of material property testing technology, and in particular to an atomic force microscopy method for testing the charge interface blocking effect of multilayer dielectrics. Background Technology
[0002] With the miniaturization and high performance of electronic devices, multilayer composite materials are widely used in capacitors, electrode materials, and energy storage devices due to their excellent dielectric properties and interfacial charge-blocking properties. However, the interfacial characteristics of multilayer materials (such as interfacial potential distribution and charge distribution) have a significant impact on their overall performance. Existing methods for characterizing the charge distribution of interfacial potential in materials mainly include electrochemical methods, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). However, these methods may have drawbacks when characterizing the interfacial characteristics of multilayer materials, such as damaging the material (e.g., etching or sputtering), which can alter the interfacial properties and affect the accuracy of the test results. Summary of the Invention
[0003] Therefore, it is necessary to provide an atomic force microscopy method for measuring the blocking effect of the charge interface in multilayer dielectrics, which can determine the blocking effect of multilayer dielectric samples, in order to address the above-mentioned technical problems.
[0004] In a first aspect, this application provides an atomic force microscopy method for measuring the charge interface blocking effect of multilayer dielectrics, the method comprising:
[0005] A potential map of the target side surface of a multilayer dielectric sample before charging is obtained using a probe; the target side surface includes the side surface of the multilayer dielectric layer of the multilayer dielectric sample; the multilayer dielectric sample includes a target material layer;
[0006] The multilayer dielectric sample is charged, and the potential map of the target side surface after charging is obtained through the probe;
[0007] Based on the pre-charging potential diagram and the post-charging potential diagram, the interfacial charge blocking performance of the target material layer is determined.
[0008] In some embodiments, the multilayer dielectric sample includes:
[0009] First electrode layer;
[0010] The target material layer is located on the surface of one side of the first electrode layer;
[0011] The second electrode layer is located on the surface of the target material layer away from the first electrode layer;
[0012] The target side surface includes the side surface of the target material layer, and also includes the side surface of the first electrode layer and / or the second electrode layer.
[0013] In some embodiments, the target material layer includes at least one of a first metal oxide inorganic layer, a polymer layer, and a second metal oxide inorganic layer.
[0014] In some embodiments, determining the interfacial charge blocking performance of the target material layer based on the pre-charging potential diagram and the post-charging potential diagram includes:
[0015] Based on the pre-charging potential diagram and the post-charging potential diagram, the target potential change curve of the multilayer dielectric sample is determined;
[0016] Analyze the potential characteristics of the target potential change curve to determine the interfacial charge blocking performance of the target material layer. The potential characteristics include the peak potential and the change in the peak potential.
[0017] In some embodiments, it also includes:
[0018] Based on the pre-charging potential diagram and the post-charging potential diagram, the target potential change curve of the multilayer dielectric sample is determined;
[0019] Based on the target potential change curve, determine the charge density distribution map of the target side surface;
[0020] Based on the charge density distribution map, the interfacial charge blocking performance of the target material layer is determined.
[0021] In some embodiments, determining the target potential change curve of the multilayer dielectric sample based on the pre-charging potential diagram and the post-charging potential diagram includes:
[0022] Based on the pre-charging potential diagram and the post-charging potential diagram, determine the first potential change curve of each multilayer dielectric sample;
[0023] Based on all the first potential change curves, multiple second potential change curves are determined.
[0024] The target potential change curve is determined by smoothing the multiple second potential change curves.
[0025] In some embodiments, charging the multilayer dielectric sample and obtaining the post-charging potential map of the target side surface through the probe includes:
[0026] The multilayer dielectric sample is charged at a preset voltage for a first preset time and then discharged for a second preset time.
[0027] The probe is used to obtain the post-discharge potential map of the target side surface of the multilayer dielectric sample after discharge, and the post-discharge potential map is used as the post-charge potential map.
[0028] In some embodiments, the preset voltage ranges from 5 to 10V, the first preset time ranges from 1 to 3 hours, and the second preset time ranges from 1 to 10 minutes.
[0029] Secondly, this application also proposes a testing device, including a probe, a memory, and a processor. The probe is used to scan the target side surface of the multilayer dielectric sample to transmit the scan information to the processor. The memory stores a computer program, and the processor executes the computer program to implement the steps of the above-described method based on the scan information.
[0030] Thirdly, this application also proposes a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the above-described method.
[0031] Fourthly, this application also proposes a computer program product, including a computer program that, when executed by a processor, implements the steps of the above-described method.
[0032] The aforementioned atomic force microscopy method for measuring the charge barrier effect of multilayer dielectrics includes: acquiring a pre-charging potential map of a target side surface of a multilayer dielectric sample using a probe; the target side surface includes the side surfaces of the multilayer dielectric layers of the multilayer dielectric sample; the multilayer dielectric sample includes a target material layer; charging the multilayer dielectric sample and acquiring a post-charging potential map of the target side surface using the probe; and determining the interface charge barrier performance of the target material layer based on the pre-charging and post-charging potential maps. This application designs multilayer dielectric samples for charge barrier effect analysis to accurately determine the charge barrier effect of different multilayer dielectric samples. Attached Figure Description
[0033] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0034] Figure 1 This is a structural block diagram of a testing device used in an atomic force microscopy method for testing the charge interface barrier effect of multilayer dielectrics in one embodiment.
[0035] Figure 2 This is one of the flowcharts for an atomic force microscopy method for measuring the charge interface blocking effect of multilayer dielectrics in one embodiment;
[0036] Figure 3 This is one of the structural diagrams of the target material layer in a multilayer dielectric sample in one embodiment;
[0037] Figure 4 This is the second structural diagram of the target material layer in a multilayer dielectric sample in one embodiment;
[0038] Figure 5 This is one of the structural block diagrams of a multilayer dielectric sample in one embodiment;
[0039] Figure 6 This is a second structural block diagram of a multilayer dielectric sample in one embodiment;
[0040] Figure 7 This is a second schematic diagram of an atomic force microscopy method for measuring the charge interface blocking effect of multilayer dielectrics in one embodiment.
[0041] Figure 8(a) is one of the topographic images of the target side surface before charging in one embodiment;
[0042] Figure 8(b) is one of the potential diagrams of the target side surface before charging in one embodiment;
[0043] Figure 8(c) is one of the topographic images of the target side surface after charging in one embodiment;
[0044] Figure 8(d) is one of the potential diagrams of the target side surface after charging in one embodiment;
[0045] Figure 8(e) is one of the potential comparison curves of the target side surface in one embodiment;
[0046] Figure 9(a) is a second topographic view of the target side surface before charging in one embodiment;
[0047] Figure 9(b) is a second potential diagram of the target side surface before charging in one embodiment;
[0048] Figure 9(c) is a second topographic image of the target side surface after charging in one embodiment;
[0049] Figure 9(d) is a second potential diagram of the target side surface after charging in one embodiment;
[0050] Figure 9(e) is a second example of a potential comparison curve of the target side surface in one embodiment;
[0051] Figure 10(a) is the third topographic view of the target side surface before charging in one embodiment;
[0052] Figure 10(b) is a third potential diagram of the target side surface before charging in one embodiment;
[0053] Figure 10(c) is the third topographic image of the target side surface after charging in one embodiment;
[0054] Figure 10(d) is a third potential diagram of the target side surface after charging in one embodiment;
[0055] Figure 10(e) is the third of the potential comparison curves of the target side surface in one embodiment;
[0056] Figure 11(a) is the fourth topographic view of the target side surface before charging in one embodiment;
[0057] Figure 11(b) is a fourth potential diagram of the target side surface before charging in one embodiment;
[0058] Figure 11(c) is the fourth topographic image of the target side surface after charging in one embodiment;
[0059] Figure 11(d) is a fourth potential diagram of the target side surface after charging in one embodiment;
[0060] Figure 11(e) is the fourth of the potential comparison curves of the target side surface in one embodiment;
[0061] Figure 12 A comparison of the potential change curves of the target side surface in the four embodiments;
[0062] Figure 13 This is the third flowchart illustrating the atomic force microscopy method for measuring the charge interface blocking effect of multilayer dielectrics in one embodiment.
[0063] Figure 14 This is a charge density distribution diagram of an atomic force microscopy method for measuring the charge interface barrier effect of multilayer dielectrics in one embodiment.
[0064] Figure 15 This is a schematic diagram of the test device in one embodiment. Detailed Implementation
[0065] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.
[0066] It should be noted that the terms "first," "second," etc., used in this application can be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from the second element. The terms "comprising" and "having," and any variations thereof, used in this application, are intended to cover non-exclusive inclusion. The term "multiple" used in this application refers to two or more. The term "and / or" used in this application refers to one of the embodiments, or any combination of multiple embodiments.
[0067] To avoid damaging the material, Kelvin probe force microscopy (KPFM) can be used to characterize the interfacial potential and charge distribution. However, the complex structure of multilayer materials may lead to the superposition of potential signals, making it difficult to extract the material potential information.
[0068] To address the aforementioned issues, this application proposes an atomic force microscopy method for measuring the charge interface blocking effect of multilayer dielectrics.
[0069] The atomic force microscopy method for testing the charge interface barrier effect of multilayer dielectrics provided in this application can be applied to characterize the interface properties of single-layer and multilayer materials. These interface properties include, but are not limited to, surface potential, work function, and charge distribution. The single-layer and multilayer materials can be used in applications including, but not limited to, electronic devices and integrated circuits (e.g., interlayer insulation, signal isolation, electrostatic discharge protection), energy storage and conversion devices (e.g., high-temperature capacitor energy storage, lithium battery safety protection), optoelectronic devices and sensors (e.g., photodetector performance optimization, solar cell interface engineering), electromagnetic protection (e.g., aerospace electromagnetic shielding, medical device anti-interference), industrial applications, and cutting-edge research (e.g., quantum computing and cryogenic electronics, flexible wearable devices).
[0070] For ease of explanation, a testing apparatus is given below, and the atomic force microscopy testing method for the multilayer dielectric charge interface blocking effect of this application can be applied to this testing apparatus.
[0071] Please refer to Figure 1 , Figure 1This application illustrates a testing apparatus 10 according to an embodiment of the present application. The testing apparatus 10 includes a probe 11 and a testing circuit 12, with both ends of the testing circuit 12 connected to the two terminals of an external test object 20. The probe 11 vibrates and scans the surface of the test object 20. A compensation voltage is applied to reduce the electrostatic force between the probe 11 and the sample to zero; at this point, the compensation voltage value is equal to the contact potential difference. When the probe 11 scans a point on the surface of the test object 20, the potential at that point can be obtained. Therefore, if all points on one surface of the test object 20 are scanned, a potential map of the entire surface of the test object 20 can be obtained.
[0072] Alternatively, the probe 11 can be scanned using methods such as line scanning or dot matrix scanning to obtain the potential map of the surface of the object under test 20. There is no restriction on the scanning method.
[0073] Please refer to Figure 2 , Figure 2 An atomic force microscopy method for testing the charge interface blocking effect of a multilayer dielectric is shown in one embodiment of this application. The method includes steps S110 to S130.
[0074] Step S110: Obtain the pre-charging potential map of the target side surface of the multilayer dielectric sample through probe 11; the target side surface includes the side surface of the multilayer dielectric layer of the multilayer dielectric sample.
[0075] Understandably, the multilayer dielectric sample is the object under test 20, which includes a target material layer 26. The target material layer 26 is the object whose interface charge-blocking performance needs to be tested. Since the structure of the target material layer 26 may be a single-layer material structure, a multilayer material structure, etc., the complex structure of the multilayer material may lead to superposition of potential signals, making it difficult to extract the material's potential information. Analysis shows that the potential information of a single-layer material is generally obtained by scanning the surface of the material (e.g., ...). Figure 3 The surfaces 21 and 22 of the single-layer material shown are not permeable to multi-layer materials. Figure 4 To obtain accurate potential information from the simplified surface 23 of the multilayer material shown, this application fabricates the target material layer 26 into a multilayer dielectric sample and then tests the side surface of the multilayer dielectric sample. Since the side surface includes the side surface of the multilayer dielectric layer (e.g., ... Figure 4 The simplified side surface 24 of the multilayer material shown can be scanned when scanning the side surface 24 to obtain the potential information of each layer of material. This solves the problem of potential signal superposition caused by testing on the surface 23 of the multilayer material, and can accurately measure the interface potential information of the target material layer 26.
[0076] It should be noted that the target material layer 26 is made into a multilayer dielectric sample for more stable scanning and energizing. The pre-charging potential map is the potential map of the target side surface scanned before charging.
[0077] Step S120: Charge the multilayer dielectric sample and obtain the post-charge potential map of the target side surface through probe 11.
[0078] Step S130: Based on the potential diagram before charging and the potential diagram after charging, determine the interface charge blocking performance of the target material layer 26.
[0079] Understandably, after charging the multilayer dielectric sample, the target side surface is scanned by probe 11 to obtain a post-charging potential map, i.e., the post-charging potential map is the potential map of the target side surface scanned after charging. The pre-charging potential map and the post-charging potential map can respectively reflect the potential distribution of the target side surface of the multilayer dielectric sample before and after charging.
[0080] It should be noted that this method can perform charge blocking effect analysis on different multilayer dielectric samples to determine the charge blocking effect (including whether a blocking effect exists and the strength of the blocking effect) of different multilayer dielectric samples. Furthermore, the charge blocking effect of the multilayer dielectric sample can be considered as the charge blocking effect of the target material layer 26. For example, if it is necessary to analyze the charge blocking effect of the first target material layer and the second target material layer, the first target material layer needs to be fabricated into a first multilayer dielectric sample, and the second target material layer needs to be fabricated into a second multilayer dielectric sample. After testing, the first interface charge blocking performance of the first multilayer dielectric sample and the second interface charge blocking performance of the second multilayer dielectric sample can be obtained. The first interface charge blocking performance can be considered as the interface charge blocking performance of the first target material layer, and the second interface charge blocking performance can be considered as the interface charge blocking performance of the second target material layer. Optionally, the first interface charge blocking performance can also be considered as the interface charge blocking performance of the first target material layer after certain processing, and the second interface charge blocking performance can also be considered as the interface charge blocking performance of the second target material layer after certain processing; no limitation is imposed here.
[0081] It should be noted that if it is necessary to compare the interfacial charge blocking performance of two target material layers 26, either the interfacial charge blocking performance of the multilayer dielectric samples corresponding to the two target material layers 26 should be compared simultaneously, or the interfacial charge blocking performance of the target material layer 26 should be compared simultaneously. If the interfacial charge blocking performance of the multilayer dielectric sample is regarded as the interfacial charge blocking performance of the target material layer 26, then either the interfacial charge blocking performance of the target material layer 26 or the interfacial charge blocking performance of the multilayer dielectric sample can be compared. For example, the interfacial charge blocking performance of the first target material layer can be compared with the second interfacial charge blocking performance of the second multilayer dielectric sample.
[0082] In the above embodiments, the target material layer 26 to be tested is made into a multilayer dielectric sample, and the side surface of the multilayer dielectric sample is tested to more accurately determine the interface potential information of the target material layer 26.
[0083] In some embodiments, such as Figure 5 As shown, the multilayer dielectric sample includes: a first electrode layer 25, a target material layer 26, and a second electrode layer 27. The target material layer 26 is located on the surface of the first electrode layer 25, and the second electrode layer 27 is located on the surface of the target material layer 26 away from the first electrode layer 25.
[0084] In order to apply voltage to both ends of the target material layer 26 without damaging its surface structure, an electrode layer needs to be integrated on each of the two surfaces of the target material layer 26 to form a multilayer dielectric sample. The entire multilayer dielectric sample can be energized through the two electrode layers. The materials of the first electrode layer 25 and the second electrode layer 27 can be at least one of, but not limited to, nickel, copper, gold, and silver. The target side surface includes the side surfaces of the first electrode layer 25, the target material layer 26, and the second electrode layer 27.
[0085] The multilayer dielectric sample in this embodiment includes a first electrode layer 25 and a second electrode layer 27. The first electrode layer 25 and the second electrode layer 27 are respectively integrated on both sides of the target material layer 26 so as to facilitate the connection of the target material layer 26 to the test circuit without damaging the target material.
[0086] In some embodiments, since the scanning process involves scanning the side surface of the multilayer dielectric sample, instability in the multilayer dielectric sample can cause inaccurate scanning of probe 11, resulting in inaccurate test structures. Therefore, as... Figure 6 As shown, Figure 6 Another side view of a multilayer dielectric sample is shown. To ensure the stability of the entire multilayer dielectric sample during testing, the multilayer dielectric sample further includes a first fixing layer 28 and a second fixing layer 29. The first fixing layer 28 is located on the surface of the first electrode layer 25 away from the target material layer 26, and the second fixing layer 29 is located on the surface of the second electrode layer 27 away from the target material layer 26. The materials of the first fixing layer 28 and the second fixing layer 29 may include at least one material such as resin, and are not limited herein.
[0087] In some embodiments, the target material layer 26 includes at least one of a first metal oxide inorganic layer 30, a polymer layer 31, and a second metal oxide inorganic layer 32. For example, the target material layer 26 may be a single-layer material structure of polymer layer 31, a two-layer material structure including the first metal oxide inorganic layer 30 and polymer layer 31, a two-layer material structure including the second metal oxide inorganic layer 32 and polymer layer 31, or a three-layer material structure including the first metal oxide inorganic layer 30, polymer layer 31, and second metal oxide inorganic layer 32, etc. Of course, this is just an example, and many other combinations of materials can also be used; no limitation is made here. The polymer layer 31 may be made of at least one of the following materials, including but not limited to polyethyleneimine (PEI), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polystyrene (PS), polycarbonate (PC), polyamide (PA, nylon), polyoxymethylene (POM), polyetheretherketone (PEEK), polyphenylene sulfide (PPS), polyimide (PI), liquid crystal polymer (LCP), etc. The metal oxide inorganic layer may include, but is not limited to, at least one of alumina, zirconium oxide, etc.
[0088] Since this application analyzes the interfacial charge blocking performance of the side surface of the target material layer 26, and the side surface of the target material layer 26 includes two electrode layers, such as... Figure 5 As shown, the first electrode layer 25 on the left and the second electrode layer 27 on the right. The interface charge barrier performance of the target material layer 26 can be scanned by selecting either the interface between the target material layer and the first electrode layer 25 or the interface between the target material layer and the second electrode layer 27; there is no limitation here. To save scanning time, depending on the different structures of the target material layer 26, a portion of the side surface of the corresponding multilayer dielectric sample can be selected as the target side surface for probe 11 scanning. For example, Figure 5 In this process, the side surface formed by the side surface of the target material layer 26 and the side surface of the first electrode layer 25 can be selected as the target side surface; or the side surface formed by the side surface of the target material layer 26 and the side surface of the second electrode layer 27 can be selected as the target side surface.
[0089] In some embodiments, the interfacial charge blocking performance of the target material layer 26 is determined based on the pre-charging potential diagram and the post-charging potential diagram, including steps S131 to S132.
[0090] Step S131: Based on the potential diagram before charging and the potential diagram after charging, determine the target potential change curve of the multilayer dielectric sample.
[0091] The potential difference between each scan point in the potential graph before and after charging is the potential change value. Since there are many scan points in each potential graph, the curve formed by the changes in several consecutive scan points is called the potential change curve. Therefore, one potential graph corresponds to several potential change curves, and the target potential change curve is determined based on these curves. For example, if a line scan is used, each scan line has several scan points. Each scan point corresponds to the potential before and after charging. The difference between the potential before and after charging at each scan point is called the potential change value at that scan point. The curve formed by the potential change values of several consecutive scan points on each line is the potential change curve.
[0092] Step S132: Analyze the potential characteristics of the target potential change curve to determine the interface charge blocking performance of the target material layer 26. The potential characteristics include the peak potential and the magnitude of the change in the peak potential.
[0093] Understandably, if a potential peak exists at the scanning interface, it indicates that the interface of the target material layer 26 has a higher potential, suggesting charge accumulation, and thus the target material layer 26 possesses charge-blocking properties. The magnitude of the change in the potential peak indicates the strength of the charge-blocking properties of the target material layer 26. A larger change in the potential peak indicates more charge leakage, thus indicating weaker charge-blocking properties of the target material layer 26; a smaller change in the potential peak indicates less charge leakage, thus indicating stronger charge-blocking properties of the target material layer 26.
[0094] The following are graphs showing the morphology and potential changes of the target side surface before and after charging in different specific embodiments.
[0095] Example 1, Figure 8(a) shows the morphology of the target side surface of a multilayer dielectric sample before charging. The multilayer dielectric sample includes a first fixing layer 28, a first electrode layer 25, a target material layer 26, a second electrode layer 27, and a second fixing layer 29. The target material layer 26 is a polymer layer 31, and the fixing layer is made of resin. The target side surface may include the target material layer 26, the electrode layer, and the fixing layer. For example, the target side surface may be composed of a polymer layer 31, a first electrode layer 25, and a first fixing layer 28. Figure 8(b) shows the potential diagram of the target side surface of the multilayer dielectric sample before charging. Figure 8(c) shows the morphology of the target side surface of the multilayer dielectric sample after charging; Figure 8(d) shows the potential diagram of the target side surface of the multilayer dielectric sample after charging; Figure 8(e) shows the potential change curves of the target side surface of the multilayer dielectric sample before and after charging, where K... 11 The potential curve of the target material layer 26 before charging, K 12The potential curve of the target material layer 26 after charging, K 13 This is a potential change curve of the target material layer 26 before and after charging. The side surface width of the polymer layer on the target side surface is 4 μm, meaning the probe scan starts 4 μm from the interface of the polymer layer. Of course, this is just an example; the specific configuration can be determined based on actual conditions, and no limitation is imposed here.
[0096] Example 2, Figure 9(a) shows the morphology of the target side surface of a multilayer dielectric sample before charging. The multilayer dielectric sample includes a first fixing layer 28, a first electrode layer 25, a target material layer 26, a second electrode layer 27, and a second fixing layer 29. The target material layer 26 includes a polymer layer 31 and a first metal oxide inorganic layer 30, and the fixing layer is made of resin. The target side surface may include the target material layer 26, the electrode layer, and the fixing layer. For example, the target side surface may be composed of a polymer layer 31, a first metal oxide inorganic layer 30, a first electrode layer 25, and a first fixing layer 28, wherein the first metal oxide inorganic layer 30 is zirconium oxide. Figure 9(b) shows the potential diagram of the target side surface of the multilayer dielectric sample before charging. Figure 9(c) shows the morphology of the target side surface of the multilayer dielectric sample after charging; Figure 9(d) shows the potential diagram of the target side surface of the multilayer dielectric sample after charging; Figure 9(e) shows the potential change curves of the target side surface of the multilayer dielectric sample before and after charging, wherein K... 21 The potential curve of the target material layer 26 before charging, K 22 The potential curve of the target material layer 26 after charging, K 23 This is a potential change curve of the target material layer 26 before and after charging. The side surface width of the polymer layer on the target side surface is 4 μm, meaning the probe scan starts 4 μm from the interface of the polymer layer. Of course, this is just an example; the specific configuration can be determined based on actual conditions, and no limitation is imposed here.
[0097] Example 3, Figure 10(a) shows the morphology of the target side surface of a multilayer dielectric sample before charging. The multilayer dielectric sample includes a first fixing layer 28, a first electrode layer 25, a target material layer 26, a second electrode layer 27, and a second fixing layer 29. The target material layer 26 includes a polymer layer 31 and a second metal oxide inorganic layer 32, and the fixing layer is made of resin. The target side surface may include the target material layer 26, the electrode layer, and the fixing layer. For example, the target side surface may be composed of a polymer layer 31, a second metal oxide inorganic layer 32, a first electrode layer 25, and a first fixing layer 28, wherein the second metal oxide inorganic layer 32 is aluminum oxide. Figure 10(b) shows the potential diagram of the target side surface of the multilayer dielectric sample before charging. Figure 10(c) shows the morphology of the target side surface of the multilayer dielectric sample after charging; Figure 10(d) shows the potential diagram of the target side surface of the multilayer dielectric sample after charging; Figure 10(e) shows the potential change curves of the target side surface of the multilayer dielectric sample before and after charging, where K 31 The potential curve of the target material layer 26 before charging, K 32 The potential curve of the target material layer 26 after charging, K 33 This is a potential change curve of the target material layer 26 before and after charging. The side surface width of the polymer layer on the target side surface is 4 μm, meaning the probe scan starts 4 μm from the interface of the polymer layer. Of course, this is just an example; the specific configuration can be determined based on actual conditions, and no limitation is imposed here.
[0098] Example 4, Figure 11(a) shows the morphology of the target side surface of a multilayer dielectric sample before charging. The multilayer dielectric sample includes a first fixing layer 28, a first electrode layer 25, a target material layer 26, a second electrode layer 27, and a second fixing layer 29. The target material layer 26 includes a first metal oxide inorganic layer 30, a polymer layer 31, and a second metal oxide inorganic layer 32. The fixing layer is made of resin. The target side surface may include the target material layer 26, the electrode layer, and the fixing layer. For example, as shown in Figure 11(a), the target side surface may be composed of the polymer layer 31, the first metal oxide inorganic layer 30, the first electrode layer 25, and the first fixing layer 28, or the target side surface may be composed of the polymer layer 31, the second metal oxide inorganic layer 32, the second electrode layer 27, and the second fixing layer 29. The material of the first metal oxide inorganic layer 30 is zirconium oxide, and the material of the second metal oxide inorganic layer 32 is aluminum oxide. Figure 11(b) shows the potential diagram of the target side surface of the multilayer dielectric sample before charging. Figure 11(c) shows the morphology of the target side surface of the multilayer dielectric sample after charging; Figure 11(d) shows the potential diagram of the target side surface of the multilayer dielectric sample after charging; Figure 11(e) shows the potential change curves of the target side surface of the multilayer dielectric sample before and after charging, where K 41 The potential curve of the target material layer 26 before charging, K 42 The potential curve of the target material layer 26 after charging, K 43 This is a potential change curve of the target material layer 26 before and after charging. The side surface width of the polymer layer on the target side surface is 4 μm, meaning the probe scan starts 4 μm from the interface of the polymer layer. Of course, this is just an example; the specific configuration can be determined based on actual conditions, and no limitation is imposed here.
[0099] It should be noted that the potential change curves in the above embodiments all include the scanning potential change curve segment in the fixed layer. Of course, if the target side surface does not include the side surface of the fixed layer, then probe 11 does not need to scan the side surface of the fixed layer, and the obtained potential change curve does not include the potential change curve segment corresponding to the side surface of the fixed layer. Whether the target side surface includes the side surface of the fixed layer can be selected according to actual needs. Of course, the potential change curve segment of the fixed layer side surface can show that the potential of the fixed layer side surface is changing, and can reflect that the target material layer 26 is currently being charged.
[0100] Figure 12A comparison diagram of the potential change curves (excluding the potential change curve segment on the side of the fixed layer) for each of the four embodiments described above is shown. Analysis of this comparison diagram reveals that the target material layer 26 in Embodiment 1 shows no change in the peak potential value at the interface, indicating that the charge blocking effect of the target material layer 26 is not significant. In Embodiments 2 through 4, the target material layer 26 shows a change in the peak potential value at the interface, indicating that the corresponding target material layer 26 has a significant charge blocking effect. Based on the magnitude of the change in the peak potential value, the target material layer 26 in Embodiment 4 has the smallest change in the peak potential value, indicating the largest charge blocking effect.
[0101] In some embodiments, such as Figure 13 As shown, the atomic force microscopy method for measuring the charge interface blocking effect of multilayer dielectrics also includes steps S210 to S230.
[0102] Step S210: Based on the potential diagram before charging and the potential diagram after charging, determine the target potential change curve of the multilayer dielectric sample.
[0103] Step S220: Based on the target potential change curve, determine the charge density distribution map of the target side surface.
[0104] Step S230: Determine the interface charge blocking performance of the target material layer 26 based on the charge density distribution diagram.
[0105] Understandably, in addition to the potential change curve analysis method in the above embodiments, the potential change curve can also be differentiated to calculate the charge density distribution, for example, by second-order differentiation (i.e., second-order electrostatic Poisson equation).
[0106] like Figure 14 As shown, Figure 14 A comparison diagram of the charge density distribution corresponding to the target potential change curves of Examples 1 to 5 is shown. Using the charge density distribution diagram allows for a more intuitive comparison of the potential change and volume charge density at the interface. Kρ 13 Corresponding potential change curve K 13 The charge density distribution; Kρ 23 Corresponding potential change curve K 23 The charge density distribution; Kρ 33 Corresponding potential change curve K 33 The charge density distribution; Kρ 43 Corresponding potential change curve K 43 The charge density distribution.
[0107] Alternatively, the second-order electrostatic Poisson equation is as follows:
[0108] ;
[0109] Where V represents the surface potential, x represents the distance between the point and the starting scan position, ρ is the charge density, ε0 represents the vacuum permittivity (ε0=8.854×10-12F / m), and ε represents the relative permittivity of the corresponding material.
[0110] Alternatively, since the potential change curve in this embodiment is relatively narrow, a first-order equation can be differentiated to obtain the charge density distribution map and the aforementioned charge blocking conclusion.
[0111] In some embodiments, determining the target potential change curve of the multilayer dielectric sample based on the pre-charging potential diagram and the post-charging potential diagram includes:
[0112] Based on the potential diagrams before and after charging, the first potential change curves of each multilayer dielectric sample are determined.
[0113] Based on the screening of all the first potential change curves, multiple second potential change curves were determined.
[0114] Understandably, when scanning the target side surface of a multilayer dielectric sample, all pre-charging and post-charging potential curves of the entire target side surface can be obtained. The target side surface is then divided into several target lines, which can be considered as components of the target side surface. Each target line corresponds to a pre-charging and post-charging potential curve. Based on the difference between the pre-charging and post-charging potential curves, the potential change curve corresponding to that target line can be obtained, and this potential change curve is called the first potential change curve. Since there are many first potential change curves on the target side surface, and some of these curves have large errors (e.g., the first potential change curves in the edge region of the target side surface), it is necessary to filter them to obtain multiple second potential change curves with smaller errors.
[0115] The target potential change curve is determined by smoothing multiple second potential change curves.
[0116] Understandably, since there are differences between each second potential change curve, it is necessary to smooth each second potential change curve to obtain a target potential change curve with smaller errors.
[0117] Optionally, each second potential change curve can be averaged to obtain the target potential change curve. Of course, this is just one smoothing method, and other methods are also possible. There are no restrictions here.
[0118] In some embodiments, the multilayer dielectric sample is charged, and the post-charge potential map of the target side surface is obtained through probe 11, including:
[0119] The multilayer dielectric sample is charged at a preset voltage for a first preset time, and then discharged for a second preset time.
[0120] The post-discharge potential map of the target side surface of the multilayer dielectric sample after discharge is obtained by probe 11, and the post-discharge potential map is used as the post-charge potential map.
[0121] Understandably, the purpose of the discharge step is to provide the charge with a certain transport time. Testing immediately after charging can easily cause abnormal changes in potential, leading to larger errors in the test results. After discharge, the charge undergoes a certain migration process. If the sample blocks the charge, the amount of charge will differ at the interface, ultimately reflected in the level and rate of change of the potential.
[0122] Optionally, the preset voltage range is 5V~10V, the first preset time range is 1h~3h, and the second preset time range is 1min~10min. Of course, this is just an example, and other ranges are also possible. There are no restrictions here.
[0123] This application designs multilayer dielectric samples to analyze the charge blocking effect, so as to accurately determine the charge blocking effect of different multilayer dielectric samples.
[0124] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages in other steps. It is understood that the steps in different embodiments can be freely combined as needed, and all non-contradictory solutions formed by such combinations are within the scope of protection of this application.
[0125] This application also proposes a testing device, such as Figure 15 As shown, the system includes a probe 11, a memory 42, and a processor 41. The probe 11 is used to scan the target side surface of the multilayer dielectric sample to transmit the scan information to the processor 41. The memory 42 stores a computer program, and the processor 41 executes the computer program to implement the steps of any of the above methods based on the scan information. It should be noted that the connection between the processor 41 and the probe 11 is not necessarily an electrical connection; it can also be an optical connection, depending on the specific method used, and no limitation is made here.
[0126] It is understood that the steps performed by the test equipment in this embodiment correspond to the test methods in the above embodiments. The optional methods of the above test methods are also applicable to this embodiment, and will not be described again here.
[0127] This application also proposes a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of any of the above methods.
[0128] This application also proposes a computer program product, including a computer program that, when executed by a processor, implements the steps of any of the methods described above.
[0129] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, artificial intelligence (AI) processors, etc., and are not limited to these.
[0130] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.
[0131] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.
Claims
1. An atomic force microscopy method for measuring the charge interface blocking effect of multilayer dielectrics, characterized in that, The method includes: A potential map of the target side surface of a multilayer dielectric sample before charging is obtained using a probe; the target side surface includes the side surface of the multilayer dielectric layer of the multilayer dielectric sample; the multilayer dielectric sample includes a target material layer; The multilayer dielectric sample is charged, and the potential map of the target side surface after charging is obtained through the probe; Based on the pre-charging potential diagram and the post-charging potential diagram, the interfacial charge blocking performance of the target material layer is determined.
2. The method according to claim 1, characterized in that, The multilayer dielectric sample includes: First electrode layer; The target material layer is located on the surface of one side of the first electrode layer; The second electrode layer is located on the surface of the target material layer away from the first electrode layer; The target side surface includes the side surface of the target material layer, and also includes the side surface of the first electrode layer and / or the second electrode layer.
3. The method according to claim 1, characterized in that, The target material layer includes at least one of a first metal oxide inorganic layer, a polymer layer, and a second metal oxide inorganic layer.
4. The method according to claim 1, characterized in that, Determining the interface charge blocking performance of the target material layer based on the pre-charging potential diagram and the post-charging potential diagram includes: Based on the pre-charging potential diagram and the post-charging potential diagram, the target potential change curve of the multilayer dielectric sample is determined; Analyze the potential characteristics of the target potential change curve to determine the interfacial charge blocking performance of the target material layer. The potential characteristics include the peak potential and the change in the peak potential.
5. The method according to claim 1, characterized in that, Also includes: Based on the pre-charging potential diagram and the post-charging potential diagram, the target potential change curve of the multilayer dielectric sample is determined; Based on the target potential change curve, determine the charge density distribution map of the target side surface; Based on the charge density distribution map, the interfacial charge blocking performance of the target material layer is determined.
6. The method according to any one of claims 4 or 5, characterized in that, The step of determining the target potential change curve of the multilayer dielectric sample based on the pre-charging potential diagram and the post-charging potential diagram includes: Based on the pre-charging potential diagram and the post-charging potential diagram, determine the first potential change curve of each multilayer dielectric sample; Based on all the first potential change curves, multiple second potential change curves are determined. The target potential change curve is determined by smoothing the multiple second potential change curves.
7. The method according to claim 1, characterized in that, The step of charging the multilayer dielectric sample and obtaining the post-charging potential map of the target side surface through the probe includes: The multilayer dielectric sample is charged at a preset voltage for a first preset time and then discharged for a second preset time. The probe is used to obtain the post-discharge potential map of the target side surface of the multilayer dielectric sample after discharge, and the post-discharge potential map is used as the post-charge potential map.
8. The method according to claim 7, characterized in that, The preset voltage ranges from 5 to 10V, the first preset time ranges from 1 to 3 hours, and the second preset time ranges from 1 to 10 minutes.
9. A testing device, characterized in that, The method includes a probe, a memory, and a processor. The probe is used to scan a target side surface of a multilayer dielectric sample to transmit scan information to the processor. The memory stores a computer program, and the processor executes the computer program to implement the steps of the method according to any one of claims 1 to 8 based on the scan information.
10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 8.
11. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 8.