Gate drive circuit and display panel

Abstract

The invention provides a gate drive circuit and a display panel. The gate drive circuit comprises an output module, a pull-up node, an input module and a bootstrap module. The output module is used for receiving a clock signal and outputting a current-stage grid signal; the pull-up node is connected to the control end of the output module; the input module is connected to the pull-up node and is used for pre-charging the pull-up node to a high level under the triggering of a frame starting signal or a cascade signal; the bootstrap module is connected between the pull-up node and the output end of the output module; wherein the bootstrap module comprises at least two capacitors, and the bootstrap module is configured to adjust the equivalent capacitance of the bootstrap module according to a temperature detection signal. The capacitor is additionally arranged in the bootstrap module, and the equivalent capacitor of the bootstrap module is adjusted according to the environment temperature change, so that the output stability of the current-stage grid signal is maintained, and the driving abnormity caused by the temperature change is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a gate driving circuit and a display panel. Background Technology

[0002] GOA (Gate Driver On Array, also known as Gate-on-Array) is a technology widely used in modern display device manufacturing. It integrates the gate (row scan) driving circuitry directly onto the array substrate of the display panel, replacing external driving chips. This technology plays a crucial role in achieving narrow bezels and low costs in devices.

[0003] While GOA technology offers significant advantages, fabricating complex drive circuits on a glass substrate also presents challenges, primarily concerning circuit stability, power consumption, and lifespan. In particular, there are drive anomalies caused by temperature variations. Summary of the Invention

[0004] The main technical problem addressed by this application is to provide a gate driving circuit and a display panel that solves the problem of abnormal driving caused by temperature changes in the gate driving circuit in the prior art.

[0005] To address the aforementioned technical problems, the first technical solution provided in this application is: a gate driving circuit, comprising: The output module is used to receive clock signals and output the current stage gate signals; The pull-up node is connected to the control terminal of the output module; The input module, connected to the pull-up node, is used to precharge the pull-up node to a high level upon triggering by a frame start signal or a cascade signal. The bootstrap module is connected between the pull-up node and the output terminal of the output module; The bootstrap module includes at least two capacitors and is configured to adjust the equivalent capacitance of the bootstrap module according to the temperature detection signal.

[0006] In some embodiments, the bootstrap module further includes a switching unit; in the bootstrap module, the number of switching units is less than or equal to the number of capacitors; the switching unit is configured to control the connection or disconnection of a corresponding capacitor according to a temperature detection signal.

[0007] In some embodiments, the bootstrap module includes two switching units and three capacitors connected in series, with the switching units and their corresponding capacitors connected in parallel; or, The bootstrap module includes two switching units and three capacitors connected in parallel, with the switching units connected in series with their corresponding capacitors.

[0008] In some embodiments, the gate drive circuit further includes a temperature detection module; the temperature detection module is used to detect the ambient temperature and output at least one temperature detection signal; the temperature detection signal is configured to correspond one-to-one with the switching unit.

[0009] In some embodiments, the temperature detection module outputs at least two temperature detection signals; In response to the ambient temperature being higher than the first temperature threshold, the potentials of the temperature detection signals are all the same and are at the first level, and the switching units are all in the first state. In response to the ambient temperature being lower than the second temperature threshold, the potentials of the temperature detection signals are all the same and are at the second level, and the switching units are all in the second state. In response to the ambient temperature being within the range of a second temperature threshold to a first temperature threshold, a portion of the temperature detection signal has a potential at the first level, while the other portion of the temperature detection signal has a potential at the second level. Among them, one of the first level and the second level is a high level and the other is a low level; one of the first state and the second state is an on state and the other is an off state.

[0010] In some embodiments, the output module includes a driving transistor. In response to the positive correlation between the mobility of the driving transistor and the ambient temperature, the first state is the on state and the second state is the off state. In response to the fact that the mobility of the driving transistor is negatively correlated with the ambient temperature, the first state is the off state and the second state is the on state.

[0011] In some embodiments, the temperature detection module includes a temperature sampling unit, a first comparator, and a second comparator; The temperature sampling unit is connected to the common node of the first input terminal of the first comparator and the first input terminal of the second comparator; The second input terminal of the first comparator is connected to the first reference voltage, and the second input terminal of the second comparator is connected to the second reference voltage. The output of the first comparator sends a first temperature detection signal to the bootstrap module. The output of the second comparator sends a second temperature detection signal to the bootstrap module. Since the output voltage of the temperature sampling unit is positively correlated with the ambient temperature, the first input terminal is a non-inverting input terminal and the second input terminal is an inverting input terminal; Since the output voltage of the temperature sampling unit is negatively correlated with the ambient temperature, the first input terminal is an inverting input terminal, and the second input terminal is a non-inverting input terminal.

[0012] In some embodiments, the temperature sampling unit includes a first resistor, a first node, and a second resistor arranged in series. The other end of the first resistor receives the reference voltage, the other end of the second resistor is grounded, and the first node is connected to the first comparator and the second comparator respectively; one of the first resistor and the second resistor is a thermistor.

[0013] In some embodiments, the temperature detection module further includes a first voltage divider unit and a second voltage divider unit; The first voltage divider unit includes a third resistor, a second node, and a fourth resistor connected in series; the other end of the fourth resistor is grounded, and the second node is connected to the first comparator. The second voltage divider unit includes a fifth resistor, a third node, and a sixth resistor connected in series; the other end of the sixth resistor is grounded, and the third node is connected to the second comparator. The resistance values ​​of the fourth resistor and the sixth resistor are equal.

[0014] To solve the above-mentioned technical problems, the second technical solution provided in this application is: to provide a display panel, which includes an array substrate and the above-mentioned gate driving circuit; the gate driving circuit is integrated into the array substrate.

[0015] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a gate driving circuit and a display panel. The gate driving circuit includes an output module, a pull-up node, an input module, and a bootstrap module. The output module receives a clock signal and outputs the current stage gate signal. The pull-up node is connected to the control terminal of the output module. The input module is connected to the pull-up node and is used to precharge the pull-up node to a high level upon triggering a frame start signal or a cascading signal. The bootstrap module is connected between the pull-up node and the output terminal of the output module. The bootstrap module includes at least two capacitors and is configured to adjust its equivalent capacitance based on a temperature detection signal. By adding capacitors to the bootstrap module and adjusting its equivalent capacitance according to changes in ambient temperature, the output stability of the current stage gate signal is maintained, improving driving abnormalities caused by temperature variations. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0017] Figure 1 This is a schematic diagram of the gate drive circuit in the prior art; Figure 2 This is a waveform diagram of the gate signal output at different temperatures; Figure 3This is a schematic diagram of a module of an embodiment of the gate drive circuit provided in this application; Figure 4 This is a schematic diagram of the circuit structure of an embodiment of the gate drive circuit provided in this application; Figure 5 This is a schematic diagram of the circuit structure of another embodiment of the gate drive circuit provided in this application; Figure 6 This is a schematic diagram of another embodiment of the gate drive circuit provided in this application; Figure 7 This is a schematic diagram of the structure of an embodiment of the temperature detection module provided in this application; Figure 8 This is a schematic diagram of the negative temperature characteristic of the thermistor provided in this application; Figure 9 This is a schematic diagram of the structure of an embodiment of the display panel provided in this application.

[0018] Explanation of icon numbers: 100. Gate drive circuit; 10. Input module; 20. Output module; 30. Bootstrap module; 31. Switching unit; 40. Pull-down sustaining module; 50. Temperature detection module; 51. Temperature sampling unit; 52. First voltage divider unit; 53. Second voltage divider unit; 200. Array substrate; 300. Display panel; PU. Pull-up node; T0. Drive transistor; C1. First capacitor; C2. Second capacitor; C3. Third capacitor; S1. First temperature detection signal; S2. Second temperature detection signal; U1. First comparator; U2. Second comparator; +, In-phase input Input terminal; - Inverting input terminal; R1, First resistor; R2, Second resistor; R3, Third resistor; R4, Fourth resistor; R5, Fifth resistor; R6, Sixth resistor; T1, First transistor; T2, Second transistor; T3, Third transistor; T4, Fourth transistor; T5, Fifth transistor; T6, Sixth transistor; T7, Seventh transistor; T8, Eighth transistor; C0, Bootstrap capacitor; Q1, First switching unit; Q2, Second switching unit; CK, Clock signal; Gn, Current stage gate signal; a, First node; b, Second node; c, Third node. Detailed Implementation

[0019] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0020] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0023] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0024] Please see Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the gate drive circuit in the prior art. Figure 2 This is a waveform diagram of the gate signal output at different temperatures.

[0025] Under extreme high and low temperature conditions, the temperature drift effect inherent in the TFT (Thin-Film Transistor) in the gate drive circuit 100 can easily lead to abnormal driving.

[0026] The gate drive circuit 100 includes an output module 20, a pull-up node PU, an input module 10, a pull-down sustaining module 40, and a bootstrap capacitor C0. During the input phase, the input module 10 receives cascaded signals (i.e., the previous stage gate signal Gn-1 and the next stage gate signal Gn+1) and controls the potential of the pull-up node PU, pulling it high. The output module 20 controls the output of the current stage gate signal Gn through the pull-up node PU. The pull-up node PU controls the conduction state of the output module 20. During the non-operating phase, the pull-down sustaining module 40 pulls the output terminals of the pull-up node PU and the gate drive circuit 100 to a low level to prevent false triggering. The bootstrap capacitor C0 utilizes capacitive coupling to further raise the potential of the pull-up node PU during the output phase, thereby enhancing the driving capability and ensuring a stable high-level output. The non-operating phase refers to the period when the gate drive circuit 100 is not responsible for outputting the high-level current stage gate signal Gn.

[0027] Specifically, the input module 10 includes a first transistor T1 and a second transistor T2. The control terminal of the first transistor T1 receives the gate signal Gn-1 from the previous stage, one end of which is connected to a high-level signal VGH, and the other end of which is connected to the pull-up node PU. The control terminal of the second transistor T2 receives the gate signal Gn+1 from the next stage, one end of which is connected to the pull-up node PU, and the other end of which is connected to a low-level signal VGL. The output module 20 includes a third transistor T3. The control terminal of the third transistor T3 is connected to the pull-up node PU, one end of which receives a clock signal CK, and the other end of which outputs the current stage gate signal Gn. The bootstrap capacitor C0 is connected between the pull-up node PU and the other end of the third transistor T3. The pull-down sustaining module 40 includes a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, and a seventh transistor T7. The control terminal of the fourth transistor T4 is connected to the pull-up node PU, one end of which is connected to one end of the fifth transistor T5, and the other end of which is connected to the low-level signal VGL; the control terminal and the other end of the fifth transistor T5 are both connected to the high-level signal VGH; the control terminal of the sixth transistor T6 is connected to the common node of the fifth transistor T5 and the fourth transistor T4, one end of which is connected to the high-level signal VGH, and the other end of which is connected to the control terminals of the seventh transistor T7 and the eighth transistor T8; one end of the seventh transistor T7 is connected to the pull-up node PU, and the other end of which is connected to the low-level signal VGL; one end of the eighth transistor T8 is connected to the output terminal of the gate drive circuit 100, and the other end of which is connected to the low-level signal VGL, used to pull down the output signal and maintain it at a low level during the non-output phase.

[0028] In conventional GOA circuits, the bootstrap capacitor C0 is fixed, primarily serving bootstrapping and stabilization purposes. Therefore, when the ambient temperature changes, the drive current in the GOA circuit varies significantly. For example... Figure 2As shown, the output signal of the gate drive circuit 100 varies significantly under different ambient temperatures (such as high temperature, normal temperature, and low temperature).

[0029] Please see Figure 1 , Figures 3 to 5 , Figure 3 This is a schematic diagram of a module of an embodiment of the gate drive circuit provided in this application. Figure 4 This is a schematic diagram of the circuit structure of an embodiment of the gate driving circuit provided in this application. Figure 5 This is a schematic diagram of the circuit structure of another embodiment of the gate drive circuit provided in this application.

[0030] This application provides a gate driving circuit 100, which includes an output module 20, a pull-up node PU, an input module 10, and a bootstrap module 30. The output module 20 receives a clock signal CK and outputs the current stage gate signal Gn. The pull-up node PU is connected to the control terminal of the output module 20. The input module 10 is connected to the pull-up node PU and is used to precharge the pull-up node PU to a high level under the triggering of a frame start signal or a cascading signal. The bootstrap module 30 is connected between the pull-up node PU and the output terminal of the output module 20. The bootstrap module 30 includes at least two capacitors and is configured to adjust the equivalent capacitance of the bootstrap module 30 according to a temperature detection signal.

[0031] By adding a capacitor to the bootstrap module 30 and adjusting the equivalent capacitance of the bootstrap module 30 according to changes in ambient temperature, the output stability of the current stage gate signal Gn is maintained, and the driving abnormality caused by temperature changes is improved.

[0032] The gate drive circuit 100 also includes a pull-down sustaining module 40 for pulling up the pull-up node PU and the output of the gate drive circuit 100 to a low level.

[0033] For example, the connection method of the output module 20, pull-up node PU, input module 10 and pull-down maintenance module 40 in this application embodiment is as described above.

[0034] In other embodiments, the output module 20, the pull-up node PU, the input module 10, and the pull-down sustaining module 40 may have other structures, which are not limited here.

[0035] It should be noted that this application adds an additional capacitor to the existing gate drive circuit 100, which includes a bootstrap capacitor C0, to adjust the equivalent capacitance of the bootstrap module 30 when the temperature changes. That is, the output module 20, pull-up node PU, input module 10, and pull-down sustaining module 40 in this application are all existing structures.

[0036] The temperature detection signal can be a signal generated internally by the gate drive circuit 100 or an input signal from the outside. There are no strict restrictions here, and the choice can be made according to actual needs.

[0037] In some embodiments, the bootstrap module 30 further includes a switching unit 31; in the bootstrap module 30, the number of switching units 31 is less than or equal to the number of capacitors; the switching unit 31 is configured to control the connection or disconnection of a corresponding capacitor according to the temperature detection signal.

[0038] For example, in the bootstrap module 30, the switching units 31 are set one-to-one with the capacitors, and the number of switching units 31 is equal to the number of capacitors.

[0039] For example, in the bootstrap module 30, the number of switching units 31 is less than the number of capacitors. In the bootstrap module 30, there is at least one capacitor that is fixedly connected to the gate drive circuit 100. This fixedly connected capacitor is always physically connected between the pull-up node PU and the output terminal of the output module 20 in the circuit topology, and its on / off state is not controlled by a switch (such as a transistor).

[0040] The following explanation mainly uses the example of the bootstrap module 30 where the number of switching units 31 is less than the number of capacitors, in order to simplify the circuit design.

[0041] For example, the bootstrap module 30 includes three capacitors: a first capacitor C1, a second capacitor C2, and a third capacitor C3. The bootstrap module 30 also includes two switching units 31: a first switching unit Q1 and a second switching unit Q2. Selectively turning on the first switching unit Q1 and the second switching unit Q2 adjusts the number of connected capacitors, thereby adjusting the equivalent capacitance of the bootstrap module 30, which can improve drive abnormalities caused by temperature changes.

[0042] In some specific embodiments, such as Figure 4 As shown, the bootstrap module 30 includes two switching units 31 and three capacitors connected in parallel, with the switching units 31 connected in series with the corresponding capacitors.

[0043] The first switching unit Q1 and the second capacitor C2 are connected in series to form the first branch, the second switching unit Q2 and the third capacitor C3 are connected in series to form the second branch, and the first capacitor C1, the first branch and the second branch are connected in parallel.

[0044] In the bootstrap module 30, when the capacitors are connected in series, the capacitors are connected in parallel with the corresponding switching units 31; or when the capacitors are connected in parallel, the capacitors are connected in series with the corresponding switching units 31, so that the equivalent capacitance of the bootstrap module 30 is maximized when all switching units 31 are turned on, and minimized when all switching units 31 are turned off, which can simplify the design of temperature detection signals and circuits.

[0045] In other specific embodiments, such as Figure 5 As shown, the bootstrap module 30 includes two switching units 31 and three capacitors connected in series. The switching units 31 and the corresponding capacitors are connected in parallel.

[0046] The first capacitor C1, the second capacitor C2, and the third capacitor C3 are connected in series to form a connection path, which connects the pull-up node PU and the output terminal of the output module 20. One end of the first switching unit Q1 is connected to the common node of the first capacitor C1 and the second capacitor C2, and the other end of the first switching unit Q1 is connected to the common node of the second capacitor C2 and the third capacitor C3. One end of the second switching unit Q2 is connected to the common node of the second capacitor C2 and the third capacitor C3, and the other end of the second switching unit Q2 is connected to the output terminal of the output module 20.

[0047] It should be understood that in other embodiments, the capacitors in the bootstrap module 30 can be connected in parallel or in series, which makes the circuit and signal design more complex than a single connection (series or parallel) between capacitors.

[0048] The following explanation uses a single connection between capacitors in bootstrap module 30 as an example.

[0049] In other embodiments, the bootstrap module 30 may include two or more capacitors. It should be understood that introducing a reasonable number of capacitors into the bootstrap module 30 can further optimize the output stability of the current stage gate signal Gn.

[0050] The following explanation uses the temperature detection signal generated internally by the gate drive circuit 100 as an example.

[0051] Please see Figures 4 to 8 , Figure 6 This is a schematic diagram of another embodiment of the gate drive circuit provided in this application. Figure 7 This is a schematic diagram of the structure of an embodiment of the temperature detection module provided in this application. Figure 8 This is a schematic diagram of the negative temperature characteristic of the thermistor provided in this application.

[0052] In some embodiments, the gate drive circuit 100 further includes a temperature detection module 50; the temperature detection module 50 is used to detect the ambient temperature and output at least one temperature detection signal; the temperature detection signal is set in a one-to-one correspondence with the switching unit 31.

[0053] A temperature detection signal controls the on / off state of a switching unit 31.

[0054] The ambient temperature can be divided into temperature ranges based on the number of temperature detection signals.

[0055] For example, the temperature detection signal is one, and the bootstrap module 30 includes two capacitors. One of the capacitors is controlled to be connected and disconnected by the switching unit 31, dividing the ambient temperature into two temperature ranges. In one temperature range, only one capacitor is connected in the bootstrap module 30, and in the other temperature range, two capacitors are connected in the bootstrap module 30.

[0056] For example, there are two temperature detection signals. The bootstrap module 30 includes two capacitors to divide the ambient temperature into two temperature ranges. In one temperature range, only one capacitor is connected in the bootstrap module 30, and in the other temperature range, two capacitors are connected in the bootstrap module 30.

[0057] For example, there are two temperature detection signals, and the bootstrap module 30 includes three capacitors to divide the ambient temperature into three temperature ranges. In the first temperature range, only one capacitor is connected in the bootstrap module 30, in the second temperature range, two capacitors are connected in the bootstrap module 30, and in the third temperature range, all three capacitors are connected in the bootstrap module 30.

[0058] It should be understood that in the bootstrap module 30, at least one capacitor can be connected simultaneously within a temperature range, or at least one capacitor can be disconnected simultaneously within a temperature range. There are no excessive restrictions here, and the choice can be made according to actual needs.

[0059] The switching unit 31 has two conduction types: high-level conduction and low-level conduction. The level of the temperature detection signal is related to the conduction type of the switching unit 31.

[0060] The conductivity types of the switching units 31 in the bootstrap module 30 can be different or the same.

[0061] The following explanation uses the example where all switching units 31 have the same conductivity type to simplify circuit design.

[0062] In some embodiments, the temperature detection module 50 outputs at least two temperature detection signals; in response to an ambient temperature higher than a first temperature threshold, the potentials of the temperature detection signals are all the same and at a first level, and the switching unit 31 is in a first state; in response to an ambient temperature lower than a second temperature threshold, the potentials of the temperature detection signals are all the same and at a second level, and the switching unit 31 is in a second state; in response to an ambient temperature within the range of the second temperature threshold to the first temperature threshold, a portion of the temperature detection signals are at a first level, and the other portion of the temperature detection signals are at a second level; wherein, one of the first level and the second level is a high level, and the other is a low level; one of the first state and the second state is an on state, and the other is an off state.

[0063] In this embodiment, the ambient temperature is divided into three temperature ranges using a first temperature threshold and a second temperature threshold. The first temperature threshold is greater than the second temperature threshold. The specific values ​​of the first and second temperature thresholds are not limited here and can be selected according to actual needs.

[0064] The level of the temperature detection signal, the on / off state of the switching unit 31, and the conductivity type of the switching unit 31 are all related to each other.

[0065] For example, the first state is the on state, and all switch units 31 are high-level conduction type, with the first level being high level.

[0066] For example, the first state is the on state, and all switch units 31 are low-level conduction type, with the first level being low level.

[0067] For example, the first state is the off state, all switch units 31 are high-level conduction type, and the first level is low level.

[0068] For example, the first state is the off state, all switch units 31 are low-level conduction type, and the first level is high level.

[0069] The following explanation will mainly focus on the first state as the on state, where all switch units 31 are high-level conducting and the first level is high.

[0070] In some embodiments, the output module 20 includes a driving transistor T0 (i.e., corresponding to...). Figure 1 The third transistor T3 in the transistor is in the following states: the first state is the on state and the second state is the off state, which is in response to the positive correlation between the mobility of the driving transistor T0 and the ambient temperature; the first state is the off state and the second state is the on state, which is in response to the negative correlation between the mobility of the driving transistor T0 and the ambient temperature.

[0071] The control terminal of the driving transistor T0 is connected to the common node of the pull-up node PU and the bootstrap module 30. One end of the driving transistor T0 receives the clock signal CK, and the other end of the driving transistor T0 serves as the output terminal of the gate drive circuit 100, used to output the current stage gate signal Gn.

[0072] When the mobility of the driving transistor T0 is positively correlated with ambient temperature, the driving transistor T0 experiences severe leakage at high temperatures and poor driving performance due to low mobility at low temperatures. Therefore, a larger equivalent capacitance is needed to maintain stable output at high temperatures, while a smaller equivalent capacitance is required to achieve fast charging at low temperatures.

[0073] Conversely, when the mobility of the driving transistor T0 is negatively correlated with the ambient temperature, a smaller equivalent capacitance is needed at high temperatures to maintain stable output, while a larger equivalent capacitance is needed at low temperatures to achieve fast charging.

[0074] In some specific embodiments, in response to the positive correlation between the mobility of the driving transistor T0 and the ambient temperature, the first state is the on state. As the ambient temperature changes from high temperature to low temperature, the equivalent capacitance of the bootstrap module 30 decreases sequentially. Specifically, when the ambient temperature is in the high temperature range (above the first temperature threshold), the equivalent capacitance of the bootstrap module 30 is the first equivalent capacitance; when the ambient temperature is in the normal temperature range (within the range of the second temperature threshold to the first temperature threshold), the equivalent capacitance of the bootstrap module 30 is the second equivalent capacitance; when the ambient temperature is in the low temperature range (below the second temperature threshold), the equivalent capacitance of the bootstrap module 30 is the third equivalent capacitance; the first equivalent capacitance is greater than the second equivalent capacitance, and the second equivalent capacitance is greater than the third equivalent capacitance.

[0075] For example, the driving transistor T0 can be an amorphous silicon (a-Si) transistor.

[0076] See Figure 4 The first equivalent capacitance is C1+C2+C3, the second equivalent capacitance is either C1+C2 or C1+C3, and the third equivalent capacitance is C1. The specific value of the second equivalent capacitance depends on the specific capacitor connected; that is, at room temperature, either the second capacitor C2 or the third capacitor C3 can be connected.

[0077] See Figure 5 The first equivalent capacitance is C1, the second equivalent capacitance is C1*C3 / (C1+C3) or the second equivalent capacitance C=C1*C2 / (C1+C2), and the third equivalent capacitance is C1*C2*C3 / (C1*C2+C2*C3+C1*C3). Similarly, at room temperature, only one of the second capacitor C2 and the third capacitor C3 needs to be connected.

[0078] In some other specific embodiments, in response to the negative correlation between the mobility of the driving transistor T0 and the ambient temperature, the first state is the off state, and as the ambient temperature changes from high temperature to low temperature, the equivalent capacitance of the bootstrap module 30 increases sequentially.

[0079] For example, the driving transistor T0 can be a single-crystal silicon (c-Si) transistor.

[0080] The following explanation uses the output of two temperature detection signals from the temperature detection module 50, namely the first temperature detection signal S1 and the second temperature detection signal S2, as an example.

[0081] In some embodiments, such as Figure 7As shown, the temperature detection module 50 includes a temperature sampling unit 51, a first comparator U1, and a second comparator U2. The temperature sampling unit 51 is connected to the common node of the first input terminal of the first comparator U1 and the first input terminal of the second comparator U2. The second input terminal of the first comparator U1 is connected to a first reference voltage, and the second input terminal of the second comparator U2 is connected to a second reference voltage. The output terminal of the first comparator U1 outputs a first temperature detection signal S1 to the bootstrap module 30. The output terminal of the second comparator U2 outputs a second temperature detection signal S2 to the bootstrap module 30. In response to the output voltage of the temperature sampling unit 51 being positively correlated with the ambient temperature, the first input terminal is a non-inverting input terminal (+), and the second input terminal is an inverting input terminal (-). In response to the output voltage of the temperature sampling unit 51 being negatively correlated with the ambient temperature, the first input terminal is an inverting input terminal (-), and the second input terminal is a non-inverting input terminal (+).

[0082] The temperature sampling unit 51 is used to convert the ambient temperature into a corresponding voltage signal.

[0083] Both the first comparator U1 and the second comparator U2 are operational amplifiers.

[0084] For example, a first temperature detection signal S1 is output to the control terminal of the first switching unit Q1, and a second temperature detection signal S2 is output to the control terminal of the second switching unit Q2.

[0085] For example, such as Figure 7 As shown, the output voltage of the temperature sampling unit 51 is positively correlated with the ambient temperature. The first input terminal is a non-inverting input (+), and the second input terminal is an inverting input (-). In response to an ambient temperature higher than a first temperature threshold, both the first temperature detection signal S1 and the second temperature detection signal S2 are high; in response to an ambient temperature lower than the second temperature threshold, both the first temperature detection signal S1 and the second temperature detection signal S2 are low. In response to an ambient temperature within the range of the second temperature threshold to the first temperature threshold, one of the first temperature detection signals S1 is high, and the other is low. If the second reference voltage is greater than the first reference voltage, the first temperature detection signal S1 is high, and the second temperature detection signal S2 is low. If the second reference voltage is less than the first reference voltage, the first temperature detection signal S1 is low, and the second temperature detection signal S2 is high.

[0086] For example, the output voltage of the temperature sampling unit 51 is negatively correlated with the ambient temperature. The first input terminal is an inverting input terminal (-), and the second input terminal is a non-inverting input terminal (+). In response to an ambient temperature higher than a first temperature threshold, both the first temperature detection signal S1 and the second temperature detection signal S2 are at a low level; in response to an ambient temperature lower than the second temperature threshold, both the first temperature detection signal S1 and the second temperature detection signal S2 are at a high level. In response to an ambient temperature within the range of the second temperature threshold to the first temperature threshold, one of the first temperature detection signals S1 is at a high level, and the other is at a low level. If the second reference voltage is less than the first reference voltage, the first temperature detection signal S1 is at a high level, and the second temperature detection signal S2 is at a low level. If the second reference voltage is greater than the first reference voltage, the first temperature detection signal S1 is at a low level, and the second temperature detection signal S2 is at a high level.

[0087] The first and second reference voltages are used to set the temperature threshold.

[0088] In some embodiments, the temperature sampling unit 51 includes a first resistor R1, a first node a, and a second resistor R2 connected in series; the other end of the first resistor R1 receives a reference voltage VCC, the other end of the second resistor R2 is grounded, and the first node a is connected to the first comparator U1 and the second comparator U2 respectively; one of the first resistor R1 and the second resistor R2 is a thermistor.

[0089] One end of the temperature sampling unit 51 receives the reference voltage VCC, and the other end is grounded.

[0090] The first node a is the output terminal of the temperature sampling unit 51.

[0091] For example, such as Figure 7 As shown, the first resistor R1 is a thermistor with a negative temperature coefficient, and the output voltage of the temperature sampling unit 51 is positively correlated with the ambient temperature.

[0092] For example, the first resistor R1 is a thermistor with a positive temperature coefficient, and the output voltage of the temperature sampling unit 51 is negatively correlated with the ambient temperature.

[0093] For example, the second resistor R2 is a thermistor with a negative temperature coefficient, and the output voltage of the temperature sampling unit 51 is negatively correlated with the ambient temperature.

[0094] For example, the second resistor R2 is a thermistor with a positive temperature coefficient, and the output voltage of the temperature sampling unit 51 is positively correlated with the ambient temperature.

[0095] In other embodiments, the temperature sampling unit 51 may be of other structures.

[0096] In some embodiments, the temperature detection module 50 further includes a first voltage divider unit 52 and a second voltage divider unit 53; the first voltage divider unit 52 includes a third resistor R3, a second node b and a fourth resistor R4 connected in series; the other end of the fourth resistor R4 is grounded, and the second node b is connected to the first comparator U1; the second voltage divider unit 53 includes a fifth resistor R5, a third node c and a sixth resistor R6 connected in series; the other end of the sixth resistor R6 is grounded, and the third node c is connected to the second comparator U2; the resistance values ​​of the fourth resistor R4 and the sixth resistor R6 are equal.

[0097] The fourth resistor R4 and the sixth resistor R6 have the same resistance value to stabilize the voltage division ratio.

[0098] In some specific embodiments, the first resistor R1 is a thermistor with a negative temperature coefficient, and the resistance values ​​of the second resistor R2, the fourth resistor R4 and the sixth resistor R6 are all equal, further stabilizing the voltage division ratio.

[0099] In other embodiments, the first voltage divider unit 52 and the second voltage divider unit 53 may also have other structures.

[0100] In other embodiments, the temperature detection module 50 may be located outside the gate drive circuit 100, that is, the temperature detection signal comes from outside the gate drive circuit 100.

[0101] Please see Figure 9 , Figure 9 This is a schematic diagram of the structure of an embodiment of the display panel provided in this application.

[0102] This application provides a display panel 300, which includes an array substrate 200 and the aforementioned gate driving circuit 100; the gate driving circuit 100 is integrated into the array substrate 200.

[0103] The gate drive circuit 100 is the GOA circuit.

[0104] The gate driving circuit 100 is located in the non-display area (not shown) of the array substrate 200. There is at least one gate driving circuit 100, and it is located on at least one side of the display area (not shown) of the array substrate 200.

[0105] For example, the gate drive circuit 100 is one.

[0106] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0107] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A gate driving circuit, characterized in that, include: The output module is used to receive clock signals and output the current stage gate signals; The pull-up node is connected to the control terminal of the output module; An input module, connected to the pull-up node, is used to precharge the pull-up node to a high level upon triggering by a frame start signal or a cascade signal; A bootstrap module is connected between the pull-up node and the output terminal of the output module; The bootstrap module includes at least two capacitors and is configured to adjust the equivalent capacitance of the bootstrap module according to the temperature detection signal.

2. The gate driving circuit according to claim 1, characterized in that, The bootstrap module further includes a switching unit; in the bootstrap module, the number of switching units is less than or equal to the number of capacitors; the switching unit is configured to control the connection or disconnection of a corresponding capacitor according to the temperature detection signal.

3. The gate driving circuit according to claim 2, characterized in that, The bootstrap module includes two switching units and three capacitors connected in series, wherein the switching units and their corresponding capacitors are connected in parallel; or, The bootstrap module includes two switching units and three capacitors connected in parallel, with each switching unit connected in series with its corresponding capacitor.

4. The gate driving circuit according to claim 2, characterized in that, The gate driving circuit further includes a temperature detection module; the temperature detection module is used to detect the ambient temperature and output at least one temperature detection signal; the temperature detection signal is configured to correspond one-to-one with the switching unit.

5. The gate driving circuit according to claim 4, characterized in that, The temperature detection module outputs at least two of the temperature detection signals; In response to the ambient temperature being higher than a first temperature threshold, the potentials of the temperature detection signals are all the same and are at a first level, and the switching units are all in a first state. In response to the ambient temperature being lower than the second temperature threshold, the potentials of the temperature detection signals are all the same and are at the second level, and the switching units are all in the second state; In response to the ambient temperature being within the range of the second temperature threshold to the first temperature threshold, a portion of the temperature detection signal has a potential at the first level, and another portion of the temperature detection signal has a potential at the second level; In this configuration, one of the first level and the second level is a high level, and the other is a low level; one of the first state and the second state is an on state, and the other is an off state.

6. The gate driving circuit according to claim 5, characterized in that, The output module includes a driving transistor. In response to the fact that the mobility of the driving transistor is positively correlated with the ambient temperature, the first state is the on state and the second state is the off state; In response to the fact that the mobility of the driving transistor is negatively correlated with the ambient temperature, the first state is the off state and the second state is the on state.

7. The gate driving circuit according to claim 5, characterized in that, The temperature detection module includes a temperature sampling unit, a first comparator, and a second comparator; The temperature sampling unit is connected to the common node of the first input terminal of the first comparator and the first input terminal of the second comparator; The second input terminal of the first comparator is connected to a first reference voltage, and the second input terminal of the second comparator is connected to a second reference voltage. The first comparator outputs a first temperature detection signal to the bootstrap module. The output of the second comparator outputs a second temperature detection signal to the bootstrap module; Since the output voltage of the temperature sampling unit is positively correlated with the ambient temperature, the first input terminal is a non-inverting input terminal and the second input terminal is an inverting input terminal; Since the output voltage of the temperature sampling unit is negatively correlated with the ambient temperature, the first input terminal is an inverting input terminal and the second input terminal is a non-inverting input terminal.

8. The gate driving circuit according to claim 1, characterized in that, The temperature sampling unit includes a first resistor, a first node, and a second resistor arranged in series. The other end of the first resistor receives a reference voltage, the other end of the second resistor is grounded, and the first node is connected to the first comparator and the second comparator respectively; one of the first resistor and the second resistor is a thermistor.

9. The gate driving circuit according to claim 7, characterized in that, The temperature detection module further includes a first voltage divider unit and a second voltage divider unit; The first voltage divider unit includes a third resistor, a second node, and a fourth resistor connected in series; the other end of the fourth resistor is grounded, and the second node is connected to the first comparator. The second voltage divider unit includes a fifth resistor, a third node, and a sixth resistor connected in series; the other end of the sixth resistor is grounded, and the third node is connected to the second comparator. The fourth resistor has the same resistance value as the sixth resistor.

10. A display panel, characterized in that, It includes an array substrate and a gate driving circuit according to any one of claims 1 to 9; the gate driving circuit is integrated into the array substrate.

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