Resonance bunching device for radio frequency high-energy ion implanter and ion implanter

Abstract

The invention discloses a resonance bunching device for a radio-frequency high-energy ion implanter and the ion implanter, the resonance bunching device comprises a resonance buncher with a double-gap asymmetric electrode structure, the resonance buncher is arranged at an inlet of a radio-frequency acceleration section and is used for longitudinally bunching direct-current ion beams into micro-beam clusters; the double-gap asymmetric electrode structure comprises a radio frequency electrode and two ground electrodes, the radio frequency electrode is located between the two ground electrodes, a first gap is formed between one ground electrode and the radio frequency electrode, a second gap is formed between the other ground electrode and the radio frequency electrode, and the distance between the first gap and the second gap is different; wherein the size of the second gap is configured to enable the time for the beam to pass through the gap to be equal to one resonance period of the resonance beam buncher. The longitudinal bunching device has the advantages of good longitudinal bunching effect and the like.

Description

Technical Field

[0001] This invention relates to the field of ion implantation technology, specifically to a resonant focusing device and an ion implanter for a radio frequency high-energy ion implanter. Background Technology

[0002] Ion implanters are one of the core pieces of equipment in the semiconductor device manufacturing field. They are used to accelerate specific types of ions and implant them into substrate materials to alter the physical properties of the materials. High-energy ion implanters can accelerate ions to energy levels of hundreds of keV or even MeV and implant them into wafers, which is of great significance for the manufacturing of logic devices and memory devices.

[0003] High-energy ion implanters can be classified into electrostatic high-energy ion implanters and radio frequency (RF) high-energy ion implanters based on their acceleration methods. Compared to electrostatic high-energy ion implanters, RF high-energy ion implanters can accelerate high-energy ion beams over shorter distances, have a more compact structure, and use multiple RF acceleration units for step-by-step acceleration, enabling precise output of ion energy.

[0004] The working process of an ion implanter can be simply described as follows: An ion source generates charged ions and guides them to an analytical magnet. The analytical magnet filters the charged ions, deflecting the desired ion types into the radio frequency (RF) acceleration zone. In the RF acceleration zone, the ions pass through a resonant beam mixer and multiple RF acceleration units, completing longitudinal beam focusing and acceleration. Simultaneously, multiple quadrupole lenses are placed in the RF acceleration zone to laterally focus the beam and reduce beam loss caused by lateral beam divergence. The accelerated charged ion beam enters an energy magnet for energy filtering, and then is shaped into a strip beam by scanning electrodes and parallel lenses before entering the target chamber to complete ion implantation.

[0005] In the above process, based on the fundamental characteristics of radio frequency acceleration, the resonant beam focusing device and its focusing effect in the radio frequency acceleration region are closely related to the current intensity from the ion implanter to the target. Existing radio frequency high-energy ion implanters use a resonant beam focusing device with a symmetrical gap for longitudinal focusing of the ion beam. Its advantages are simple structure (same as the resonant accelerator) and frequency adjustment method is also the same as the resonant accelerator. Its disadvantage is that the focusing effect of the symmetrical gap structure is poor.

[0006] For radio frequency (RF) high-energy ion implanters, due to the characteristics of RF acceleration, only a portion of the ions in the DC beam emitted from the ion source are in the accelerating phase of the accelerating field when entering the acceleration region, thus achieving ideal acceleration. To improve the beam transmission efficiency of RF high-energy ion implanters and obtain a higher-dose target beam, a longitudinal focusing device—a resonant beam concentrater—can be installed in the entrance region of its RF acceleration section. This resonant beam concentrater longitudinally focuses the charged DC beam generated by the ion source and filtered by the analytical magnet, converging the original DC beam longitudinally into micro-bundles. This ensures that more ions are in the accelerating phase when entering the subsequent resonant acceleration unit. The resonant beam concentrater provides little or no longitudinal acceleration to the beam; therefore, its installation increases the overall length of the RF acceleration section and the footprint of the ion implanter. In reality, the components and electrode structure of the resonant beam concentrate itself are not large. However, to achieve a good beam-concentrating effect, a relatively long drift section needs to be set between the resonant beam concentrate and the subsequent acceleration unit (the resonant beam concentrate accelerates some ions and decelerates others in the DC beam, requiring a certain drift distance to convert the velocity change into a position change, thus completing the longitudinal beam concentration). In addition, due to the special structure of the resonant beam concentrate, frequency adjustment itself is also a technical challenge. Summary of the Invention

[0007] To address the technical problems existing in the prior art, the present invention provides a resonant focusing device and an ion implanter for radio frequency high-energy ion implanters with good longitudinal focusing effect.

[0008] To solve the above-mentioned technical problems, the technical solution proposed by this invention is as follows: A resonant focusing device for a radio frequency high-energy ion implanter includes a resonant focusing device with a dual-gap asymmetric electrode structure, wherein the resonant focusing device is disposed at the entrance of the radio frequency acceleration section and is used to longitudinally focus a DC ion beam into a micro-bundle. The dual-gap asymmetric electrode structure includes a radio frequency electrode and two ground electrodes. The radio frequency electrode is located between the two ground electrodes. One ground electrode and the radio frequency electrode form a first gap, and the other ground electrode and the radio frequency electrode form a second gap. The distances between the first gap and the second gap are different. The size of the second gap is configured such that the time for the beam to pass through the gap is equal to one resonant period of the resonant beam gatherer.

[0009] Preferably, it further includes a frequency adjustment device, comprising a movable short-circuit clamp disposed on the inductor coil of the resonant cluster, wherein the equivalent inductance of the resonant circuit is changed by moving the short-circuit clamp to adjust the resonant frequency.

[0010] Preferably, the short-circuit clamp includes a left clamp body, a right clamp body, and a fastener; the left clamp body and the right clamp body are fastened to adjacent turns of the inductor coil by the fastener.

[0011] Preferably, the left clamp, the right clamp, and the fastener are all made of conductive material; the left clamp, the right clamp, and the fastener are all silver-plated.

[0012] Preferably, the resonant beam gatherer further includes a barrel shell, which is a detachable structure.

[0013] Preferably, the barrel shell is a sleeve-type or assembled structure.

[0014] The present invention also discloses a radio frequency high-energy ion implanter, including the resonant focusing device as described above, wherein the ion implanter includes a low-energy section, a radio frequency acceleration section and a high-energy section; The low-energy band includes an ion source and an analytical magnet for generating and screening ion beams; The radio frequency acceleration section includes the focusing resonator and multiple resonant accelerators for rectifying and accelerating the ion beam; The high-energy band includes an energy magnet, a scanning electrode, a parallel magnet, and a target chamber, used for energy screening, beam shaping, and ion implantation.

[0015] Preferably, at least one transverse beam-focusing unit and / or beam detection unit is integrated in the beam-focusing drift section between the resonant beam focuser and the first resonant accelerator.

[0016] Preferably, the lateral beam focusing unit is a quadrupole lens, used to reduce lateral beam divergence; the beam detection unit is a Faraday cup, used to monitor beam intensity in real time.

[0017] Preferably, the length of the beam-focusing drift section is configured to match the voltage applied by the resonant beam-focuser and the initial energy of the ions, so as to ensure that the ion beam completes longitudinal focusing when entering the resonant accelerator.

[0018] Compared with the prior art, the advantages of the present invention are as follows: The electrode structure proposed in this invention is a resonant beam focusing device with a double-gap asymmetric structure. Due to its asymmetric structure and the design of the two gap dimensions and the longitudinal length of the intermediate radio frequency electrode, it can achieve a good longitudinal beam focusing effect. Furthermore, based on the aforementioned asymmetric electrode structure design, the resonant structure design and frequency modulation method of the beam focusing resonant device proposed in this invention can modulate the frequency of the resonant beam focusing device without changing the positions of each electrode (radio frequency electrode and two ground electrodes). Specifically applied to the practical use of radio frequency high-energy ion implanters, it can further achieve frequency adjustment of the resonant beam focusing device without disrupting the vacuum in the focusing and acceleration regions.

[0019] The beam-focusing resonator and its frequency adjustment method of the present invention can be used to adjust the frequency of the resonator by moving the short-circuit clamp set on the inductor coil, which is simple and easy to implement. In addition, the resonant beam focuser is set at the entrance of the radio frequency acceleration section of the ion implanter, and the quadrupole lens for lateral beam focusing and the Faraday cup detector for measuring the beam current are set in its beam-focusing drift section, which reduces the increase in the overall length of the radio frequency acceleration section caused by the introduction of the resonant beam focuser.

[0020] This invention significantly improves the beam transmission efficiency (up to 50%) of a radio frequency high-energy ion implanter by employing a resonant beam gatherer with a dual-gap asymmetric electrode structure and combining it with an online frequency modulation design using a movable short-circuit clamp. This effectively focuses the DC ion beam longitudinally into a high-density micro-cluster. By optimizing the layout of the beam gatherer drift section and integrating a quadrupole lens and a Faraday cup, it reduces the size and footprint of the equipment while achieving high-efficiency beam gatherer. Its unique frequency adjustment mechanism allows maintenance to be performed without disrupting the beamline vacuum, greatly improving equipment calibration efficiency and operational reliability. Overall, it solves the technical problems of poor beam gatherer effect, complex frequency modulation, and lengthy equipment layout in traditional solutions. Attached Figure Description

[0021] Figure 1 This is a basic principle block diagram of an existing radio frequency high-energy ion implanter.

[0022] Figure 2 This is a schematic diagram showing the change of the longitudinal electric field distribution (beam propagation direction) along the central axis of a certain acceleration gap in a standing wave accelerator tube as a function of the acceleration field phase.

[0023] Figure 3 This is a schematic diagram of an existing resonant beam gatherer.

[0024] Figure 4 This is a schematic diagram showing the effect of the resonant beam on the DC beam after the ion beam enters the electric field region of the resonant beam.

[0025] Figure 5 This is one of the structural schematic diagrams of the resonant beam gatherer of the present invention in an embodiment.

[0026] Figure 6 This is a second schematic diagram of the resonant beam gatherer of the present invention in an embodiment.

[0027] Figure 7 This is a schematic diagram of the structure of the short-circuit clamp in an embodiment of the present invention.

[0028] Figure 8 This is a schematic diagram of the arrangement of each unit in the RF acceleration section beamline cavity of the present invention. Detailed Implementation

[0029] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0030] like Figure 1 The diagram shows the basic principle block diagram of a radio frequency (RF) high-energy ion implanter. Simply put, an ion implanter can be divided into three parts: a low-energy segment, an RF acceleration segment, and a high-energy segment. The low-energy segment includes an ion source and an analytical magnet (also known as a mass analyzer). The ion source generates and extracts the desired type of charged ion beam, and the analytical magnet filters the extracted ion beam to remove impurity ions. The RF acceleration segment is equipped with a resonant beam gatherer and multiple resonant accelerators to longitudinally accelerate the ion beam to the required energy. The high-energy segment includes an energy magnet, a scanning electrode, a parallel magnet, and a target chamber. The energy magnet filters to obtain the ion beam with the required energy (due to the characteristics of RF acceleration, some ions are outside the required energy range). The scanning magnet shapes the ion beam into a divergent beam, and the parallel magnet shapes the divergent beam into a parallel beam, which then enters the target chamber to complete the implantation of the wafer.

[0031] To facilitate understanding, a brief introduction to radio frequency (RF) acceleration and drift tube linear accelerators is provided here. The biggest difference between RF acceleration and electrostatic acceleration, which is more common in ion implantation, is that RF acceleration uses a radio frequency field, also known as a resonant field. The acceleration field region of an electrostatic accelerator is a steady-state field, while the acceleration field region of RF acceleration is a resonant field. For example... Figure 2 This diagram illustrates the change in the longitudinal (beam propagation direction) electric field distribution along the central axis of a certain accelerating gap in a standing wave accelerator tube as a function of the accelerating field phase. Assuming that charged ions can achieve the desired acceleration at a phase of 90°±45°, for a DC beam uniformly arranged longitudinally, only 1 / 4 of the beam can be accelerated, resulting in low radio frequency acceleration transmission efficiency.

[0032] The basic principle and structure of a radio frequency resonant beam concentrater are similar to those of a resonant accelerator; it can be called a dual-gap drift tube linear accelerator, such as... Figure 3 As shown, the basic structure can be divided into a coil, a casing, a ceramic cup, radio frequency (RF) electrodes, and two ground electrodes. The electric field required for focusing and acceleration is distributed in the region between the RF electrodes and the ground electrodes at both ends. This region can be equivalent to the capacitance of an RLC circuit, while the solenoid-shaped coil provides the inductance required to generate resonance. Copper, a material with high conductivity, is typically used as the coil material to reduce losses in the resonant circuit. The coaxial feedthrough transmits the signal from the external RF power source into the resonator, and the ceramic cup separates the vacuum region of the beam channel from the region inside the casing, while also insulating the coil from the outer wall.

[0033] The resonant clusterer is located at the very front of the radio frequency acceleration section. Its function is to longitudinally focus the DC ion beam generated by the ion source and filtered by the analytical magnet into micro-clusters, so that more particles are in the acceleration phase of the accelerator when the ion beam enters the subsequent resonant accelerator. For example... Figure 4This diagram illustrates the effect of the resonant cluster on the DC beam after the ion beam enters the electric field region of the resonant cluster. It can be seen that as the DC beam passes through the resonant cluster, some ions are accelerated, while others are decelerated. During the subsequent drift phase, the accelerated ions gradually catch up with the decelerated ions, transforming the original DC beam into a series of micro-clusters with higher longitudinal density (whose period is the same as the resonant cluster's resonant period).

[0034] The above process can be completed with just one acceleration gap. For the dual acceleration gap structure of the RF resonator, the electric field of the second acceleration gap will actually affect the beam-gathering effect.

[0035] To address this problem, this invention provides a resonant beam focusing device for a radio frequency high-energy ion implanter, comprising a resonant beam focuser with a dual-gap asymmetric electrode structure. The electrode structure includes one radio frequency electrode and two ground electrodes, with the radio frequency electrode located between the two ground electrodes. One ground electrode and the radio frequency electrode form a first gap, and the other ground electrode and the radio frequency electrode form a second gap. The distances between the first and second gaps are different. By designing the dimensions of the second gap, its impact on the beam current is minimized. Specifically, the size of the second gap is set such that the time required for the beam current to pass through this gap is exactly one resonant cycle of the resonant beam focuser. In this case, the second gap accelerates and decelerates the ions at different times, with the overall impact approaching zero. Figure 5 The diagram shown is a schematic of an asymmetric electrode resonant beam gatherer.

[0036] In actual use, due to manufacturing errors and other reasons, the resonant frequency of the entire resonant assembly may not be the required operating frequency after all the sub-components are assembled. In this case, it is necessary to adjust the resonant frequency to the required frequency by changing the equivalent capacitance or equivalent inductance of the resonant circuit.

[0037] Specifically, the present invention achieves the above-mentioned frequency adjustment by setting a frequency adjustment device (short-circuit clamp) on the coil, such as... Figure 6 As shown, by using a short-circuit clamp (or other short-circuiting method) to short-circuit two adjacent turns of the resonator inductor coil, the overall equivalent inductance of the coil can be changed. Since the equivalent inductance varies at different locations within the inductor coil, moving the short-circuit clamp along the inductor coil allows for continuous adjustment of the resonator's equivalent inductance, thus enabling frequency regulation. Figure 7 As shown, it should be noted that the use of short-circuit clips has a significant impact on the fundamental frequency of the resonator. After using short-circuit clips, certain modifications need to be made to the original inductor coil, such as increasing the number of turns.

[0038] Figure 7The initial position of the short-circuit clamp is near the bottom of the inductor coil. When it rotates and moves along the inductor coil, the equivalent inductance of the circuit decreases and the resonant frequency increases when it moves towards the top, and vice versa.

[0039] resonant frequency f : f=1 / LC L The equivalent inductance of the resonator. C This is the equivalent capacitance of the resonator.

[0040] Figure 7 This diagram illustrates the mechanical structure of a short-circuit clamp that connects two adjacent turns of the inductor coil. The short-circuit clamp includes a left clamp body, a right clamp body, and fasteners. The left and right clamp bodies are secured to adjacent turns of the inductor coil by the fasteners. The short-circuit clamp is made of copper, and to prevent electrochemical oxidation of the device, the fastening screws are also made of copper. Preferably, the coil, short-circuit clamp, and fastening screws can be silver-plated to improve conductivity, reduce losses, and prevent metal oxidation after prolonged operation, thereby increasing the device's lifespan.

[0041] In one specific embodiment, the barrel of the resonant clusterer can be configured as a detachable structure (sleeve type or modular type). This is because the resonant clusterer requires a relatively low focusing voltage amplitude, and the voltage is low throughout its barrel. Unlike resonant accelerators, which require the filling of the barrel (coil area) with sulfur hexafluoride gas to prevent high-voltage arcing, the resonant clusterer's coil area chamber does not require sealing. By configuring it as a detachable structure, the barrel can be disassembled after the clusterer is installed on the ion implanter for frequency adjustment, without disrupting the vacuum in the beamline chamber. Common resonators use a metal ring fitted near the electrode rod, and the frequency is adjusted by changing the equivalent capacitance of the resonator by moving the metal ring up and down. Using this frequency adjustment method, frequency calibration during machine maintenance requires breaking the vacuum in the beamline chamber, which is time-consuming. The solution of this invention can significantly reduce the time spent on frequency maintenance of the clusterer.

[0042] This invention also provides a radio frequency high-energy ion implanter, including the resonant focusing device described above. The ion implanter includes a low-energy section, a radio frequency acceleration section, and a high-energy section. The low-energy band includes an ion source and an analytical magnet, used to generate and screen ion beams; The radio frequency acceleration section includes the focused resonator and multiple resonant accelerators for rectifying and accelerating the ion beam; The high-energy band includes an energy magnet, a scanning electrode, a parallel magnet, and a target chamber, used for energy screening, beam shaping, and ion implantation.

[0043] When the aforementioned resonant beam gatherer is used in a radio frequency ion implanter, it is placed at the entrance of the radio frequency acceleration section. Preferably, one or more lateral beam gatherer units (quadrupole lenses) or beam detectors (e.g., Faraday cups) can be set between the resonant beam gatherer and the subsequent first resonant accelerator (the aforementioned beam drift section) to improve the utilization rate of the machine body size, reduce the overall size of the machine, and improve the beam transmission efficiency.

[0044] It should be noted that the length of the beam-focusing drift section, i.e. the distance between the resonant beam focusr and the first resonant accelerator, must be matched with the voltage applied by the resonant beam focusr and the initial energy of the ions when they enter the radio frequency section. That is, the ion beam is accelerated or decelerated at a specific amplitude at the first beam-focusing gap, so that it can complete good longitudinal beam-focusing when it drifts to the first acceleration gap of the first resonant accelerator. At this time, the beam emittance matches the resonant accelerator receiveance. Figure 8 This diagram illustrates the arrangement of units within the beamline cavity of the radio frequency acceleration section.

[0045] As described above, the frequency modulation structure and method of the resonant beam gatherer can be applied not only to beam gatherers but also to radio frequency resonant acceleration units.

[0046] Using the aforementioned short-circuit clamp frequency modulation scheme, the frequency adjustment device is located in the non-beamline vacuum chamber area; that is, the casing can be configured as a detachable structure. This allows for frequency adjustment of the focused resonator after it is installed on the ion implanter, without disrupting the vacuum in the beamline chamber, facilitating instrument maintenance once the machine is fully operational.

[0047] After setting up the resonant beam concentrator, the DC beam can be longitudinally focused, so that when the ion beam enters the electric field region of the subsequent acceleration unit, more ions are located in the acceleration phase, improving the beam transmission efficiency. The transmission efficiency of the radio frequency acceleration section can reach 50%.

[0048] Of course, the frequency of the resonant cluster can also be adjusted by changing the distance between the radio frequency electrode and the ground electrode, thereby altering its equivalent capacitance. However, this would change the electric field distribution of the cluster, making it difficult to ensure consistency between different ion implantation machines in practical applications.

[0049] The electrode structure proposed in this invention is a resonant beam focusing device with a double-gap asymmetric structure. Due to its asymmetric structure and the design of the two gap dimensions and the longitudinal length of the intermediate radio frequency electrode, it can achieve a good longitudinal beam focusing effect. Furthermore, based on the aforementioned asymmetric electrode structure design, the resonant structure design and frequency modulation method of the beam focusing resonant device proposed in this invention can modulate the frequency of the resonant beam focusing device without changing the positions of each electrode (radio frequency electrode and two ground electrodes). Specifically applied to the practical use of radio frequency high-energy ion implanters, it can further achieve frequency adjustment of the resonant beam focusing device without disrupting the vacuum in the focusing and acceleration regions.

[0050] The beam-focusing resonator and its frequency adjustment method of the present invention can be used to adjust the frequency of the resonator by moving the short-circuit clamp set on the inductor coil, which is simple and easy to implement. In addition, the resonant beam focuser is set at the entrance of the radio frequency acceleration section of the ion implanter, and the quadrupole lens for lateral beam focusing and the Faraday cup detector for measuring the beam current are set in its beam-focusing drift section, which reduces the increase in the overall length of the radio frequency acceleration section caused by the introduction of the resonant beam focuser.

[0051] This invention significantly improves the beam transmission efficiency (up to 50%) of a radio frequency high-energy ion implanter by employing a resonant beam gatherer with a dual-gap asymmetric electrode structure and combining it with an online frequency modulation design using a movable short-circuit clamp. This effectively focuses the DC ion beam longitudinally into a high-density micro-cluster. By optimizing the layout of the beam gatherer drift section and integrating a quadrupole lens and a Faraday cup, it reduces the size and footprint of the equipment while achieving high-efficiency beam gatherer. Its unique frequency adjustment mechanism allows maintenance to be performed without disrupting the beamline vacuum, greatly improving equipment calibration efficiency and operational reliability. Overall, it solves the technical problems of poor beam gatherer effect, complex frequency modulation, and lengthy equipment layout in traditional solutions.

[0052] Explanation of related terms: Ion source: generates a charged ion beam (continuous beam); Analyzing the magnet: filtering impurity ions generated by the ion source (based on the different trajectories of ions with different charge-to-mass ratios and energies in the magnetic field). Radio frequency acceleration section: resonant beam gatherer *1 + resonant accelerator *n + lateral beam gatherer *n; wherein the resonant beam gatherer is used for longitudinal beam gathering to improve the beam capture rate of the radio frequency acceleration section; the resonant accelerator is used to accelerate the beam; the lateral beam gatherer and the resonant accelerator are arranged alternately to perform lateral beam gathering during the beam acceleration process and reduce beam loss caused by lateral beam divergence.

[0053] Energy magnet: Screens ions that meet the energy requirements (ions with different energies move in different trajectories in the magnetic field, and ions with incorrect energy will hit the beam tube wall and be lost). Scanning electrode: The ion beam is scanned into a strip by applying a time-varying transverse electric field to the electrode plate; Parallel magnets: deflect the strip-shaped beam used by the scanning electrodes to complete the scanning process into a parallel beam that enters the target chamber; Target chamber: The target chamber contains the wafer, and the beam is injected within the target chamber.

[0054] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principle of the present invention should be considered within the scope of protection of the present invention.

Claims

1. A resonant focusing device for a radio frequency high-energy ion implanter, characterized in that, It includes a resonant beam focusing device with a dual-gap asymmetric electrode structure, the resonant beam focusing device being disposed at the entrance of the radio frequency acceleration section, for longitudinally focusing a DC ion beam into micro-bundles; The dual-gap asymmetric electrode structure includes a radio frequency electrode and two ground electrodes. The radio frequency electrode is located between the two ground electrodes. One ground electrode and the radio frequency electrode form a first gap, and the other ground electrode and the radio frequency electrode form a second gap. The distances between the first gap and the second gap are different. The size of the second gap is configured such that the time for the beam to pass through the gap is equal to one resonant period of the resonant beam gatherer.

2. The resonant focusing device for a radio frequency high-energy ion implanter according to claim 1, characterized in that, It also includes a frequency adjustment device, comprising a movable short-circuit clamp disposed on the inductor coil of the resonant cluster, wherein the equivalent inductance of the resonant circuit is changed by moving the short-circuit clamp to adjust the resonant frequency.

3. The resonant focusing device for a radio frequency high-energy ion implanter according to claim 2, characterized in that, The short-circuit clamp includes a left clamp body, a right clamp body, and a fastener; the left clamp body and the right clamp body are fastened to adjacent turns of the inductor coil by the fastener.

4. The resonant focusing device for a radio frequency high-energy ion implanter according to claim 3, characterized in that, The left clamp, right clamp, and fasteners are all made of conductive materials; the left clamp, right clamp, and fasteners are all silver-plated.

5. The resonant focusing device for a radio frequency high-energy ion implanter according to any one of claims 1-4, characterized in that, The resonant beam gatherer also includes a barrel shell, which is a detachable structure.

6. The resonant focusing device for a radio frequency high-energy ion implanter according to claim 5, characterized in that, The barrel shell is a sleeve-type or assembled structure.

7. A radio frequency high-energy ion implanter, characterized in that, Including the resonant beam-focusing device as described in any one of claims 1-6, the ion implanter includes a low-energy band, a radio frequency acceleration band, and a high-energy band; The low-energy band includes an ion source and an analytical magnet for generating and screening ion beams; The radio frequency acceleration section includes the focusing resonator and multiple resonant accelerators for rectifying and accelerating the ion beam; The high-energy band includes an energy magnet, a scanning electrode, a parallel magnet, and a target chamber, used for energy screening, beam shaping, and ion implantation.

8. The radio frequency high-energy ion implanter according to claim 7, characterized in that, In the beam drift section between the resonant beam gatherer and the first resonant accelerator, at least one transverse beam gathering unit and / or beam detection unit are integrated.

9. The radio frequency high-energy ion implanter according to claim 8, characterized in that, The lateral beam focusing unit is a quadrupole lens, used to reduce lateral beam divergence; the beam detection unit is a Faraday cup, used to monitor beam intensity in real time.

10. The radio frequency high-energy ion implanter according to claim 8, characterized in that, The length of the focusing drift section is configured to match the voltage applied by the resonant focusing device and the initial energy of the ions to ensure that the ion beam completes longitudinal focusing when entering the resonant accelerator.

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