Radiation type one-bit digital phased array applied to millimeter wave band

Abstract

The invention provides a radiation type one-bit digital phased array applied to a millimeter wave band, which is characterized in that a main body part is only composed of a radiation plate and a control plate without a T / R assembly, the main body part is manufactured by adopting a PCB (Printed Circuit Board) process, the plates are directly inserted and connected without a cable, and the radiation plate comprises a radiation array surface, a bias network and a feed network; the control panel comprises a control module and a power conversion module; the radiation plate is divided into K symmetrical sub-arrays, each sub-array is formed by uniformly arranging M * N radiation type one-bit electric control phase modulation units on a two-dimensional plane according to the same interval d, each sub-array corresponds to an independent connector, d is a positive non-zero real number, and K, M and N are positive integers in the form of even numbers. The device does not need long-time calibration before use, and has a power-on self-calibration characteristic; compared with a microstrip line feed network, the height of the profile of the whole machine can be further reduced on the basis of reducing feed loss in a millimeter wave band.

Description

Technical Field

[0001] This invention relates to the field of digital phased array technology based on reconfigurable smart surface technology, and in particular to a radial one-bit digital phased array applied in the millimeter-wave band. Background Technology

[0002] Phased array technology originated in the early 20th century and experienced rapid development in the 1960s, now widely used in military communication and radar systems. With the maturation of phased array applications, it has gradually gained attention from industry. However, traditional phased array antennas are limited by their complex structure, large weight, and high cost, making them difficult to promote in the civilian sector. Reconfigurable Smart Surface (RIS) technology is a revolutionary technology derived from metamaterials and the generalized Snell's law. It typically consists of an array surface composed of large-scale reconfigurable cells, allowing for on-site programming and intelligent reconfiguration of the radio electromagnetic environment, manipulating the transmission path of electromagnetic waves, and altering the signals received by users. This will bring about revolutionary changes to existing communication systems and network architectures. As a digital phased array technology, RIS uses a field-programmable gate array to change the near-field digital coding matrix, thereby achieving effective real-time beamforming in the far field. After its successful development as a new technology, RIS digital phased arrays have made comprehensive progress in industrial applications due to their low cost, high integration, conformal design, and ease of deployment. The new communication system based on RIS digital phased array has unique characteristics such as high mobility, wide applicability, long distance, full automation, and instant link establishment, and has important application value.

[0003] The patent search query (one bit + digital phased array) yielded only one patent result.

[0004] Patent application (publication number CN118943747A) discloses a broadband one-bit digital reconfigurable antenna element and a digital multi-beam antenna system. This invention provides a broadband digital reconfigurable antenna element that integrates two PIN diodes on its structure. By applying different bias voltages, the antenna element is excited to exhibit two digital states, "0" and "1," with a phase difference of 180°. The above elements are arranged periodically, and a microstrip feed power divider network is used to construct a novel digital antenna system. This patent differs from the one in that it targets high-frequency bands such as millimeter waves, uses stripline feeds to reduce profile height and feed loss, and has a different element structure; the entire array is divided into subarrays, which can further reduce feed loss while providing more directional anti-interference capabilities; a fast beamforming algorithm enables agile three-dimensional beam scanning, and a corresponding function codebook is established for single-beam scanning to achieve real-time beamforming. Summary of the Invention

[0005] The technical problem to be solved by this invention is to provide a radial one-bit digital phased array for millimeter-wave band. By adjusting the phase coding matrix introduced by the combination of the on and off states of the PIN diode array, the phase distribution matrix of the feed source introduced by the feed network and the above-mentioned phase coding matrix are changed. Thus, based on the radial one-bit RIS electronically controlled phase modulation unit, single-beam scanning agility within the pitch direction of ±60° can be achieved, which is suitable for the construction of 5G-Advanced and next-generation 6G mobile communication platforms.

[0006] The technical solution of this invention is as follows: A radial one-bit digital phased array for millimeter-wave band is characterized in that the main body consists only of a radiating plate and a control board without the need for a transceiver (T / R) assembly. It is manufactured using PCB technology, and the boards are directly connected by plug-and-play without the need for cables. The radiating plate includes three parts: a radiating array surface, a bias network, and a feed network. The control board includes two parts: a control module and a power conversion module. The radiating plate is divided into K symmetrical subarrays. Each subarray consists of M×N radial one-bit electronically controlled phase modulation units uniformly arranged at the same spacing d on a two-dimensional plane. Each subarray corresponds to a separate connector, where d is a positive non-zero real number, and K, M, and N are even positive integers.

[0007] Furthermore, the radiating plate operates at 25-27 GHz, is divided into 4 sub-arrays, each with a size of 8×8 and a total of 256 array elements, with an element spacing of 5.75 mm, and the radiating plate has a lateral dimension of 115 mm × 92 mm.

[0008] Furthermore, the radial one-bit electrically controlled phase modulation unit includes a metal radiating layer, a dielectric substrate A, a metal bias layer, an adhesive substrate A, a metal ground plate A, a dielectric substrate B, an adhesive substrate B, a metal network layer, a dielectric substrate C, and a metal ground plate B arranged sequentially. The metal radiating layer and the metal network layer, the metal radiating layer and the metal ground plate B, the metal radiating layer and the metal bias layer, and the metal ground plate A and the metal ground plate B are electrically connected by metallized vias.

[0009] Furthermore, the metal radiating layer uses copper or aluminum with a thickness of 0.018 mm. Each unit has two unidirectional PIN diodes mounted on the metal radiating layer, model MADP-14020. The combination of the two PIN diode states, "on / off" and "off / on", enables the switching of two digital states "0" and "1" with a phase difference of 180°. The metal bias layer uses copper / aluminum and has a thickness of 0.018 mm. It consists of symmetrically bent metal wires and symmetrical fan-shaped matching branches, and can simultaneously control the on / off state of two PIN diodes.

[0010] Furthermore, dielectric substrate A uses Guoneng GNC350T with a thickness of 0.508mm; dielectric substrates B and C both use Guoneng GNC350T with a thickness of 0.254mm; and adhesive substrates A and B both use Guoneng GN350B with a thickness of 0.1mm.

[0011] Furthermore, both metal floor A and metal floor B are made of copper or aluminum with a thickness of 0.018 mm. Metal floor A and metal floor B are fed by a stripline, and energy is fed to the metal radiation layer through a coupling layer.

[0012] Furthermore, the control module is based on FPGA control logic, which generates the required one-bit binary encoded data by the chip and generates the required array encoding distribution by controlling the DC bias voltage on each PIN diode.

[0013] Furthermore, the power conversion module is a two-stage voltage conversion structure, which steps down the input voltage to +3.3V, +1.8V, +1.65V, and +1.0V.

[0014] Furthermore, the PCB process of the control board uses FR4 dielectric substrate, with a total of 12 layers and a total thickness of 2.0mm.

[0015] This invention provides a radial one-bit digital phased array for millimeter-wave band applications, which has the following advantages compared to existing technologies: The digital phased array described in this invention can achieve single-beam scanning within a ±60° elevation angle range based on a one-bit RIS basic unit, and can realize the required design functions within approximately 8% of the relative bandwidth of the K-band. The digital phased array of this invention uses a stripline feed network, which, compared to a microstrip feed network, can further reduce the overall profile height in the millimeter-wave band while reducing feed losses. This invention is a digital phased array that, compared to traditional phased arrays, does not require large-scale T / R components, does not require long-term calibration before use, and has power-on self-calibration characteristics. This invention is a radiating digital metasurface that, compared to reflective and transmissive digital metasurfaces, does not require an external feed source and features high feed stability and a low profile. The radiating plate and control plate of the digital phased array described in this invention are connected by a direct plug-in method, eliminating the need for extra cabling and flying wires, which can further improve the stability of hardware operation; the digital phased array described in this invention is equipped with a fast beamforming algorithm to achieve effective single-beam shaping; the digital phased array described in this invention has a simple structure, low cost, and is easy to manufacture, and can be extended to different microwave frequency bands, making it widely applicable to different communication application scenarios. Attached Figure Description

[0016] Figure 1 This is a photograph of the prototype of the ZF1-26-RIS corresponding to this invention.

[0017] Figure 2 This is a schematic diagram of the unit structure of the ZF1-26-RIS prototype of this invention.

[0018] Figure 3 These are the phase curves of the ZF1-26-RIS prototype unit corresponding to different codes in this invention.

[0019] Figure 4 These are the gain curves of the ZF1-26-RIS prototype unit corresponding to different encodings in this invention.

[0020] Figure 5 These are the VSWR curves for different encodings of the ZF1-26-RIS prototype unit corresponding to this invention.

[0021] Figure 6 This is a cross-sectional structural diagram of the radiation plate of the ZF1-26-RIS prototype of the present invention.

[0022] Figure 7 This is a schematic diagram of the radiating layer metal structure of the radiating plate of the ZF1-26-RIS prototype of the present invention.

[0023] Figure 8 This is a schematic diagram of the bias layer metal structure of the radiation plate of the ZF1-26-RIS prototype of the present invention.

[0024] Figure 9 This is a schematic diagram of the network layer metal structure of the radiation plate of the ZF1-26-RIS prototype of this invention.

[0025] Figure 10 This is a schematic diagram / schematic diagram of the front and back structure of the control board of the ZF1-26-RIS prototype of this invention.

[0026] Figure 11 This is a comparison chart of simulation and measured results of the standing wave ratio at the subarray port of the ZF1-26-RIS prototype corresponding to this invention.

[0027] Figure 12 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 25GHz frequency and with a beam pointing at 15°.

[0028] Figure 13 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 25GHz frequency and 30° beam direction.

[0029] Figure 14 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 25GHz frequency and with a beam pointing at 45°.

[0030] Figure 15 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 25GHz frequency and with a beam pointing at 60°.

[0031] Figure 16 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 26GHz frequency and with a beam pointing at 15°.

[0032] Figure 17 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 26GHz frequency and with a beam pointing at 30°.

[0033] Figure 18 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 26GHz frequency and with a beam pointing at 45°.

[0034] Figure 19 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 26GHz frequency and with a beam pointing at 60°.

[0035] Figure 20 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 27GHz frequency and with a beam pointing at 15°.

[0036] Figure 21 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 27GHz frequency and 30° beam direction.

[0037] Figure 22 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 27GHz frequency and with a beam pointing at 45°.

[0038] Figure 23 This is a comparison chart of the numerical simulation and actual measurement results of the algorithm for the radiation pattern of the ZF1-26-RIS prototype at 27GHz frequency and with a beam pointing at 60°.

[0039] Figure 24 This is the beamforming result of the single-beam scanning algorithm along the azimuth angle φ=0° for the ZF1-26-RIS prototype of this invention.

[0040] Figure 25 This is a schematic diagram of the overall structure of the ZF1-26-RIS prototype corresponding to this invention. Detailed Implementation

[0041] The present invention will be further illustrated below with reference to the accompanying drawings and specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the invention. After reading this invention, any modifications of the invention in various equivalent forms by those skilled in the art will fall within the scope defined by the appended claims.

[0042] This invention discloses a radial one-bit digital phased array for millimeter-wave band applications, which can be used to build novel communication systems. The invention provides a radial one-bit digital phased array for millimeter-wave band applications, such as... Figure 25 As shown, the main body consists only of a radiating board and a control board, eliminating the need for T / R components. It is manufactured using PCB technology, and the boards are directly connected via plug-and-play connections without cables. The radiating board primarily comprises three parts: the radiating array, the bias network, and the feed network. The control board mainly comprises two parts: a control module and a power conversion module. The radiating board is divided into K symmetrical subarrays. Each subarray consists of M×N radially-type one-bit electrically controlled phase modulation units uniformly arranged at the same spacing d on a two-dimensional plane. Each subarray corresponds to a separate connector. Here, d is a carefully designed positive non-zero real number, and K, M, and N are typically even-numbered positive integers.

[0043] This invention achieves agile single-beam scanning within a certain spatial range by controlling the digital encoding matrix corresponding to the on / off state combinations of the PIN diode array on the radiating plate via a control board. This alters the combined phase matrix of the feed phase distribution matrix introduced by the feed network on the radiating plate and the aforementioned phase encoding matrix. Finally, based on a matching fast beamforming algorithm, a functional codebook corresponding to single-beam scanning is established for real-time beamforming.

[0044] The radial one-bit digital phased array described in this invention mainly comprises two parts: a radiating board and a control board. It is manufactured using PCB technology and connected via an interlocking method.

[0045] The radiating plate is divided into K subarrays. Each subarray consists of M×N radiating one-bit RIS basic units evenly arranged on a two-dimensional plane at a spacing d. K, M, and N are all even-numbered non-zero positive integers, and d is a carefully designed positive non-zero real number.

[0046] Preferred configuration: The radiating plate operates in the 25-27 GHz range, is divided into 4 subarrays, each with an 8×8 subarray size, and contains a total of 256 array elements. The element spacing is 5.75 mm, and the lateral dimensions of the radiating plate are 115 mm × 92 mm.

[0047] The basic unit of the radiation-type one-bit RIS is as follows: Figure 2As shown, the system includes, in sequence, a metal radiating layer, dielectric substrate A, a metal bias layer, adhesive substrate A, metal ground plate A, dielectric substrate B, adhesive substrate B, a metal network layer, dielectric substrate C, and metal ground plate B. Electrical connections are achieved between the metal radiating layer and the metal network layer, between the metal radiating layer and the metal ground plate B, between the metal radiating layer and the metal bias layer, and between metal ground plate A and metal ground plate B using metallized vias. Dielectric substrate A uses a GNC350T material with a thickness of 0.508 mm; dielectric substrates B and C both use GNC350T materials with a thickness of 0.254 mm; adhesive substrates A and B both use GNC350B materials with a thickness of 0.1 mm.

[0048] Preferably, the total thickness of the radiant panel is approximately 1.27 mm.

[0049] Preferably, the metal radiating layer is made of copper / aluminum with a thickness of 0.018mm. Each unit has two unidirectional PIN diodes mounted on the metal radiating layer, model MADP-14020. The combination of the two PIN diode states, "on / off" and "off / on", can realize the switching of two digital states "0" and "1" with a phase difference of 180°.

[0050] Preferred: The dielectric substrate A is selected from Guoneng GNC350T, with a thickness of 0.508mm, a dielectric constant of 3.5, and a loss tangent of 0.0025.

[0051] Preferably, the metal bias layer uses copper / aluminum with a thickness of 0.018 mm, and consists of symmetrically bent metal wires and symmetrical fan-shaped matching branches, which can simultaneously control the on / off state of two PIN diodes. In addition, it can suppress high-frequency leakage in the bias network.

[0052] Preferred: The bonding plate A is selected from Guoneng GN350B, with a thickness of 0.1mm, a dielectric constant of 3.55, and a loss tangent of 0.0035.

[0053] Preferably, both metal floor A and metal floor B are made of copper / aluminum with a thickness of 0.018mm. A stripline feed is used between metal floor A and metal floor B, and energy is fed to the radiating layer through a metal network layer, which can reduce high-frequency line loss while reducing the overall profile height.

[0054] Preferred: The dielectric substrate B is selected from Guoneng GNC350T, with a thickness of 0.254mm, a dielectric constant of 3.5, and a loss tangent of 0.0025.

[0055] Preferred: The bonding plate B is selected from Guoneng GN350B, with a thickness of 0.1mm, a dielectric constant of 3.55, and a loss tangent of 0.0035.

[0056] Preferably, the metal network layer uses copper / aluminum with a thickness of 0.018 mm. As the feed section in the stripline, it provides the feed phase distribution matrix through a "serial-parallel feed" method to compensate for the 3 dB energy loss due to one bit of phase discrepancy.

[0057] Preferred: The dielectric substrate C is selected from Guoneng GNC350T, with a thickness of 0.254mm, a dielectric constant of 3.5, and a loss tangent of 0.0025.

[0058] Preferred: The key performance indicators of the radiation-type one-bit RIS radiation board are shown in Table 1: Table 1 Key Performance Indicators Serial Number category index Remark 1 Operating frequency band 25-27GHz K-band 2 Phase quantization One bit 0 / π 3 Array size 16×16 256 formation elements 4 Scan range Pitch ±60° 360° 5 Actual gain ≥18dB No less than within the scanning range 6 3dB beamwidth 6°~12° Narrow middle and wide side 7 Beam switching time <1ms From receiving the instruction to beamforming 8 size <140mm×140mm×20mm Overall machine outer envelope 9 weight <1.5kg Total weight The control board consists of a control module and a power conversion module.

[0059] Preferably, the control module is based on FPGA control logic. The XC7K325T-2FFG900I chip generates the required one-bit (binary) encoded data, and generates the required array encoding distribution by controlling the DC bias voltage on each PIN diode. Specifically, the common terminal voltage of the PIN diode is +1.65V, and the diode is turned on or off by outputting high and low levels from the FPGA's I / O port.

[0060] Preferably, the power conversion module is designed as a two-stage voltage conversion structure, stepping down the input voltage to +3.3V, +1.8V, +1.65V, and +1.0V. Preferred design: The control board PCB uses FR4 dielectric substrate, with a total of 12 layers, a total thickness of 2.0mm, and front dimensions of 115mm×115mm.

[0061] This invention also provides a prototype operating in the K-band with a center frequency of 26 GHz, designated ZF1-26-RIS, as follows: Figure 1 The image shown is a photograph of the ZF1-26-RIS prototype. Results from this prototype are used to verify the functions and performance indicators described in this invention.

[0062] The radiant panel consists of 256 such Figure 2 The radial one-bit RIS cell shown has a phase curve as follows: Under the two digital states "0" and "1" determined by the combination of the on / off states of the PIN diodes. Figure 3 As shown, the gain curve is as follows Figure 4 As shown, the VSWR curve is as follows: Figure 5 As shown.

[0063] The aforementioned radiating board has a multi-layer structure, designed using multi-layer PCB technology. Its overall structural diagram is shown below. Figure 6As shown. The radiating layer metal structure with the PIN diode array mounted is as follows: Figure 7 As shown; the bias layer metal structure that determines the on / off state of the PIN diode array combination is as follows Figure 8 As shown; striplines are used to feed the radiating layer, which reduces high-frequency feeding losses and further lowers the profile height of the RIS digital phased array. The corresponding network layer metal structure is as follows. Figure 9 As shown. Furthermore, electrical connections are achieved between the metal radiating layer and the metal network layer, between the metal radiating layer and metal ground plane B, between the metal radiating layer and the metal bias layer, and between metal ground plane A and metal ground plane B using metallized vias.

[0064] The example divides the 16×16 square array in the radiating plate into four symmetrical 8×8 square subarrays with an element spacing of 5.75mm. The radiating array size is 96mm×92mm, the array size including the connector is 115mm×92mm, the array size including the feeder connector is 115mm×115mm, and the overall outer envelope size including the structural components does not exceed 140mm×140mm×20mm.

[0065] Each of the subarrays is powered by a separate connector to ensure that the RIS digital phased array is resistant to interference from at least three directions after connecting four digital channels. If no such requirement exists, the entire 16×16 square RIS array can be powered using a single connector.

[0066] The front and back design drawings of the above control board are as follows: Figure 10 As shown, it mainly consists of a control module and a power supply module. Among them, the core device of the FPGA control module located in the center is the XC7K325T-2FFG900I, which realizes real-time parallel control of 512 pin tubes.

[0067] Figure 11 To Figure 1 The figure shows a comparison of the simulation and measured results of the port standing wave ratio of the prototype subarray. It can be seen that the prototype satisfies S11 < -10dB and has an impedance bandwidth of 8% in the 25-27GHz frequency band.

[0068] Figures 12 to 15 for Figure 1 The figure shows a comparison between the numerical simulation results and the measured results of beamforming obtained by the matching fast beamforming algorithm at the 25GHz frequency point when the target beam pointing is 15°, 30°, 45° and 60° respectively.

[0069] Figures 16 to 19 for Figure 1The figure shows a comparison between the numerical simulation results and the measured results of beamforming obtained by the matching fast beamforming algorithm at the 26GHz frequency point when the target beam pointing is 15°, 30°, 45° and 60° respectively.

[0070] Figures 20 to 23 for Figure 1 The figure shows a comparison between the numerical simulation results and the measured results of beamforming obtained by the matching fast beamforming algorithm at the 25GHz frequency point when the target beam pointing is 15°, 30°, 45° and 60° respectively.

[0071] pass Figures 12 to 23 A comparison between the numerical simulation results and the measured results shows that... Figure 1 The K-band prototype shown can achieve beam scanning within a ±60° range along the elevation direction in the 25-27 GHz frequency range. The main beam pointing is basically consistent with the measured results, as shown in Table 2. When the directional beam points to 15°, 30°, 45°, and 60°, the corresponding peak gains are 22.1 dB, 21.5 dB, 20.3 dB, and 19.2 dB, respectively, and the corresponding 3 dB beamwidths are 6.5°, 7.0°, 9.0°, and 12.1°, respectively.

[0072] Table 2. Beam scanning codebook design results of the ZF1-26-RIS prototype of this invention. It should be noted that the above description is merely illustrative and explanatory of the present invention. Those skilled in the art should understand that any modifications and substitutions to the present invention fall within the scope of protection of the present invention.

Claims

1. A radial one-bit digital phased array for millimeter-wave band applications, characterized in that, The main body consists only of a radiating board and a control board, without the need for T / R components. It is manufactured using PCB technology, and the boards are directly connected by plug-and-play without the need for cables. The radiating board includes three parts: a radiating array, a bias network, and a power supply network. The control board includes two parts: a control module and a power conversion module. The radiating board is divided into K symmetrical subarrays. Each subarray consists of M×N radiating one-bit electronically controlled phase modulation units evenly arranged at the same spacing d on a two-dimensional plane. Each subarray corresponds to a separate connector, where d is a positive non-zero real number, and K, M, and N are even positive integers.

2. The radial one-bit digital phased array for millimeter-wave band as described in claim 1, characterized in that, The radiating plate operates at 25-27 GHz and is divided into 4 sub-arrays, each with a size of 8×8 and a total of 256 array elements. The element spacing is 5.75 mm, and the horizontal dimensions of the radiating plate are 115 mm × 92 mm.

3. The radial one-bit digital phased array for millimeter-wave band as described in claim 1, characterized in that, The radial one-bit electrically controlled phase modulation unit includes a metal radiating layer, a dielectric substrate A, a metal bias layer, an adhesive substrate A, a metal ground plate A, a dielectric substrate B, an adhesive substrate B, a metal network layer, a dielectric substrate C, and a metal ground plate B arranged sequentially. The metal radiating layer and the metal network layer, the metal radiating layer and the metal ground plate B, the metal radiating layer and the metal bias layer, and the metal ground plate A and the metal ground plate B are electrically connected by metallized vias.

4. The radial one-bit digital phased array for millimeter-wave band as described in claim 3, characterized in that, The metal radiating layer uses copper or aluminum and has a thickness of 0.018 mm. Each unit has two unidirectional PIN diodes mounted on the metal radiating layer, model MADP-14020. The "on / off" and "off / on" states of the two PIN diodes are combined to switch between two digital states "0" and "1" with a phase difference of 180°. The metal bias layer uses copper / aluminum and has a thickness of 0.018 mm. It consists of symmetrically bent metal wires and symmetrical fan-shaped matching branches, and can simultaneously control the on / off state of two PIN diodes.

5. The radial one-bit digital phased array for millimeter-wave band as described in claim 3, characterized in that, The dielectric substrate A uses Guoneng GNC350T with a thickness of 0.508mm; both dielectric substrates B and C use Guoneng GNC350T with a thickness of 0.254mm; both adhesive substrates A and B use Guoneng GN350B with a thickness of 0.1mm.

6. The radial one-bit digital phased array for millimeter-wave band according to claim 3, characterized in that, Both metal floor A and metal floor B are made of copper or aluminum and have a thickness of 0.018 mm. Metal floor A and metal floor B are fed by a stripline, and energy is fed to the metal radiation layer through a coupling layer.

7. The radial one-bit digital phased array for millimeter-wave band as described in claim 4, characterized in that, The control module is based on FPGA control logic. The chip generates the required one-bit binary encoded data and generates the required array encoding distribution by controlling the DC bias voltage on each PIN diode.

8. The radial one-bit digital phased array for millimeter-wave band according to claim 1, characterized in that, The power conversion module is a two-stage voltage conversion structure, which steps down the input voltage to +3.3V, +1.8V, +1.65V, and +1.0V.

9. The radial one-bit digital phased array for millimeter-wave band according to claim 1, characterized in that, The control board uses a dielectric substrate FR4 with 12 layers and a total thickness of 2.0 mm for its PCB.

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