Preparation method of display panel, display panel and display device

Abstract

The invention discloses a preparation method of a display panel, the display panel and a display device. After an isolation material layer is prepared on a substrate, a first barrier layer with a first opening is prepared, the isolation material layer is patterned through the first opening, and a first groove is formed in the isolation material layer. After a first groove is formed in an isolation material layer, a second barrier layer with a second opening is prepared, and the orthographic projection of the first groove on a substrate is overlapped with the orthographic projection of the second opening on the substrate, so that the first groove is subsequently patterned through the second opening, and a first isolation opening is formed in the isolation material layer. The second barrier layer can cover the area, except the first groove, of the isolation material layer, the problem that wet etching liquid medicine damages the first electrode in the via hole during subsequent wet etching of the first groove is avoided, the structural integrity of the first electrode in the via hole is guaranteed, stable electric signals are provided for the first electrode, and the reliability of the device is improved. Therefore, the use performance of the display panel is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a method for manufacturing a display panel, the display panel itself, and a display device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) and flat panel displays based on light-emitting diodes (LEDs) are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream of display devices.

[0003] However, the performance of current OLED display products needs to be improved. Summary of the Invention

[0004] This application provides a method for manufacturing a display panel, a display panel, and a display device, aiming to improve the performance of the display panel.

[0005] The first aspect of this application provides a method for manufacturing a display panel, the method comprising:

[0006] An isolation material layer is prepared on a substrate;

[0007] A first barrier layer with a first opening is prepared on the side of the isolation material layer away from the substrate, and the isolation material layer is patterned through the first opening to obtain an isolation material layer with a first groove.

[0008] A second barrier layer is prepared on the side of the isolation material layer with the first groove away from the substrate. The second barrier layer has a second opening, and the orthographic projection of the first groove on the substrate overlaps with the orthographic projection of the second opening on the substrate.

[0009] The first groove is patterned through the second opening to form an isolation material layer with the first isolation opening.

[0010] According to an embodiment of the first aspect of this application, prior to the step of preparing an isolation material layer on the substrate, the method further includes:

[0011] A conductive layer and a planarization layer are sequentially prepared on a substrate. The conductive layer includes an overlap portion, and the planarization layer includes a via. At least a portion of the overlap portion is exposed through the via.

[0012] A first electrode layer is prepared on the side of the planarization layer away from the substrate. The first electrode layer includes a plurality of first electrodes spaced apart from each other. The first electrodes and the overlapping portion are electrically connected through vias. At least a portion of the vias are projected onto the substrate within the projection of the second barrier layer onto the substrate. A first isolation opening exposes a portion of the corresponding first electrode. The projection of the first isolation opening onto the substrate is outside the projection of the vias onto the substrate.

[0013] According to any of the foregoing embodiments of the first aspect of this application, the insulating material layer having a first groove is recessed in the via to form a first recess, and at least a portion of the first recess is located within the orthogonal projection of the second barrier layer onto the substrate.

[0014] According to any of the foregoing embodiments of the first aspect of this application, after the step of forming the insulating material layer having the first insulating opening, the method further includes:

[0015] The first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer are prepared sequentially.

[0016] The first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer are patterned to form a first light-emitting unit, a first sub-electrode, and a first encapsulation portion located on the side of the first sub-electrode away from the substrate, corresponding to the first isolation opening.

[0017] According to any of the foregoing embodiments of the first aspect of this application, the orthographic projection of the first package portion on the substrate is located outside the orthographic projection of the via on the substrate.

[0018] According to any of the foregoing embodiments of the first aspect of this application, after the step of forming the isolation material layer having the first isolation opening and before the step of sequentially preparing the first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer, the method further includes:

[0019] The second barrier layer is peeled off.

[0020] According to any of the foregoing embodiments of the first aspect of this application, the surface of the isolation material layer facing away from the substrate is recessed toward the substrate to form a first recess, and at least a portion of the first recess is located within the orthogonal projection of the second barrier layer onto the substrate.

[0021] According to any of the foregoing embodiments of the first aspect of this application, at least a portion of the second barrier layer fills the first recess.

[0022] According to any of the foregoing embodiments of the first aspect of this application, the film thickness of the insulating material layer in the first recess is less than the film thickness of at least a portion of the insulating material layer outside the first recess.

[0023] According to any of the foregoing embodiments of the first aspect of this application, the size of the first groove is smaller than the size of the first isolation opening.

[0024] According to any of the foregoing embodiments of the first aspect of this application, the orthographic projection of the first groove on the substrate is located within the orthographic projection of the second opening on the substrate.

[0025] According to any of the foregoing embodiments of the first aspect of this application, the second opening is provided at a distance from the first groove at the orthographic projection edge of the substrate.

[0026] According to any of the foregoing embodiments of the first aspect of this application, the distance between the outer contour of the second opening projected onto the substrate and the outer contour of the first groove projected onto the substrate is greater than or equal to 3 micrometers.

[0027] According to any of the foregoing embodiments of the first aspect of this application, the first groove is a blind groove or a through groove.

[0028] According to any of the foregoing embodiments of the first aspect of this application, prior to the step of preparing an isolation material layer on the substrate, the method further includes: preparing a planarization layer on the substrate, the planarization layer including vias; the isolation material layer being recessed within the vias to form a first recess. At least a portion of the vias, in their orthogonal projection onto the substrate, lies within the orthogonal projection of the second barrier layer onto the substrate; a first isolation opening exposes a portion of the corresponding first electrode, and the orthogonal projection of the first isolation opening onto the substrate lies outside the orthogonal projection of the vias onto the substrate.

[0029] According to any of the foregoing embodiments of the first aspect of this application, the thickness of the insulating material layer inside the via is less than at least a portion of the thickness of the insulating material layer outside the via.

[0030] According to any of the foregoing embodiments of the first aspect of this application, after the steps of forming the first light-emitting unit, the first sub-electrode, and the first package portion located on the side of the first sub-electrode away from the substrate corresponding to the first isolation opening, the method further includes:

[0031] The isolation material layer with the first isolation opening is patterned to obtain an isolation material layer with the first isolation opening and the second isolation opening, which are spaced apart.

[0032] According to any of the foregoing embodiments of the first aspect of this application, after obtaining the insulating material layer having a first insulating opening and a second insulating opening, the method further includes:

[0033] The second light-emitting material layer, the second electrode material layer, and the second encapsulation material layer are prepared sequentially.

[0034] The second light-emitting material layer, the second electrode material layer, and the second encapsulation material layer are patterned to form a second light-emitting unit, a second sub-electrode, and a second encapsulation portion located on the side of the second sub-electrode away from the substrate, corresponding to the second isolation opening.

[0035] According to any of the foregoing embodiments of the first aspect of this application, the orthographic projection of the second package portion on the substrate is located outside the orthographic projection of the via on the substrate.

[0036] According to any of the foregoing embodiments of the first aspect of this application, the first light-emitting unit and the second light-emitting unit emit different colors.

[0037] According to any of the foregoing embodiments of the first aspect of this application, the step of patterning the isolation material layer having the first isolation opening further includes:

[0038] A third barrier layer with a third opening is prepared on the side of the isolation material layer with a first isolation opening away from the substrate, and the isolation material layer with the first isolation opening is patterned through the third opening to obtain an isolation material layer with a first isolation opening and a second groove, wherein the second groove is spaced apart from the first isolation opening in the orthogonal projection on the substrate.

[0039] A fourth barrier layer is prepared on the side of the isolation material layer having a first isolation opening and a second groove that is away from the substrate. The fourth barrier layer has a fourth opening, and the second groove is located within the orthogonal projection of the substrate.

[0040] The second groove is patterned through the fourth opening to form an isolation material layer with a first isolation opening and a second isolation opening.

[0041] According to any of the foregoing embodiments of the first aspect of this application, the size of the second groove is smaller than the size of the second isolation opening.

[0042] According to any of the foregoing embodiments of the first aspect of this application, after the step of forming the isolation material layer having the second isolation opening, and before the steps of sequentially preparing the second light-emitting material layer, the second electrode material layer, and the second encapsulation material layer, the method further includes:

[0043] The fourth barrier layer is peeled off.

[0044] According to any of the foregoing embodiments of the first aspect of this application, at least a portion of the vias are projected onto the substrate within the projected image of the fourth barrier layer onto the substrate.

[0045] According to any of the foregoing embodiments of the first aspect of this application, the insulating material layer having the second groove is recessed in the via to form a second recess, and at least a portion of the second recess is located within the orthogonal projection of the fourth barrier layer on the substrate.

[0046] According to any of the foregoing embodiments of the first aspect of this application, the fourth opening is provided at a distance from the orthographic projection edge of the substrate to the second groove at the orthographic projection edge of the substrate.

[0047] According to any of the foregoing embodiments of the first aspect of this application, the distance between the outer contour of the fourth opening projected onto the substrate and the outer contour of the second groove projected onto the substrate is greater than or equal to 3 micrometers.

[0048] According to any of the foregoing embodiments of the first aspect of this application, the second groove is a blind groove or a through groove.

[0049] According to any of the foregoing embodiments of the first aspect of this application, after the step of obtaining the isolation material layer having the first isolation opening and the second groove, and before the step of preparing the fourth barrier layer on the side of the isolation material layer having the first isolation opening and the second groove facing away from the substrate, the method further includes:

[0050] The third barrier layer is peeled off.

[0051] According to any of the foregoing embodiments of the first aspect of this application, prior to the step of preparing a first barrier layer having a first opening on the side of the isolation material layer facing away from the substrate, the method further includes:

[0052] The isolation material layer is patterned to obtain an isolation material layer with a third isolation opening.

[0053] According to any of the foregoing embodiments of the first aspect of this application, the first isolation opening and the third isolation opening are spaced apart.

[0054] According to any of the foregoing embodiments of the first aspect of this application, after the step of obtaining the isolation material layer having the third isolation opening, and before the step of preparing the first barrier layer having the first opening on the side of the isolation material layer facing away from the substrate, the method further includes:

[0055] The third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer are prepared sequentially.

[0056] The third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer are patterned to form a third light-emitting unit, a third sub-electrode, and a third encapsulation part located on the side of the third sub-electrode away from the substrate, corresponding to the third isolation opening.

[0057] According to any of the foregoing embodiments of the first aspect of this application, the orthographic projection of the third package portion on the substrate is located outside the orthographic projection of the via on the substrate.

[0058] According to any of the foregoing embodiments of the first aspect of this application, in the step of patterning the insulating material layer to obtain an insulating material layer with a third insulating opening, the method further includes:

[0059] A fifth barrier layer with a fifth opening is prepared on the side of the isolation material layer away from the substrate, and the isolation material layer is patterned through the fifth opening to obtain an isolation material layer with a third groove.

[0060] The third groove is patterned to form an isolation material layer with a third isolation opening.

[0061] According to any of the foregoing embodiments of the first aspect of this application, the size of the third groove is smaller than the size of the third isolation opening.

[0062] According to any of the foregoing embodiments of the first aspect of this application, prior to the step of patterning the third groove, the method further includes:

[0063] A sixth barrier layer is prepared on the side of the insulating material layer with a third groove away from the substrate. The sixth barrier layer has a sixth opening, and the orthogonal projection of the third groove onto the substrate is located within the orthogonal projection of the sixth opening onto the substrate.

[0064] According to any of the foregoing embodiments of the first aspect of this application, at least a portion of the vias are projected onto the substrate within the projection of the sixth barrier layer onto the substrate.

[0065] According to any of the foregoing embodiments of the first aspect of this application, the insulating material layer having a third groove is recessed in the via to form a third recess, and at least a portion of the third recess is located within the orthogonal projection of the sixth barrier layer onto the substrate.

[0066] According to any of the foregoing embodiments of the first aspect of this application, the sixth opening is provided at a distance from the orthographic projection edge of the substrate to the third groove at the orthographic projection edge of the substrate.

[0067] According to any of the foregoing embodiments of the first aspect of this application, the distance between the outer contour of the sixth opening projected onto the substrate and the outer contour of the third groove projected onto the substrate is greater than or equal to 3 micrometers.

[0068] According to any of the foregoing embodiments of the first aspect of this application, the third groove is a blind groove or a through groove.

[0069] According to any of the foregoing embodiments of the first aspect of this application, after the step of forming the isolation material layer having the third isolation opening and before the step of sequentially preparing the third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer, the method further includes:

[0070] The sixth barrier layer is peeled off.

[0071] According to any of the foregoing embodiments of the first aspect of this application, after the step of obtaining the isolation material layer having the third groove, and before the step of preparing the sixth barrier layer on the side of the isolation material layer having the third groove facing away from the substrate, the preparation method further includes:

[0072] The fifth barrier layer is peeled off.

[0073] According to any of the foregoing embodiments of the first aspect of this application, the isolation material layer includes a first film layer and a second film layer, the second film layer is located on the side of the first film layer away from the substrate, the first groove penetrates the second film layer, and the depth of the first groove penetrating the first film layer is less than or equal to the thickness of the first film layer.

[0074] According to any of the foregoing embodiments of the first aspect of this application, the depth of the first isolation opening in the first film layer is greater than or equal to the depth of the first groove in the first film layer; and / or, the cross-section of the first isolation opening in the first film layer parallel to the substrate is greater than the cross-section of the first groove in the first film layer parallel to the substrate; and / or, the cross-section of the first isolation opening in the first film layer perpendicular to the substrate is greater than the cross-section of the first groove in the first film layer perpendicular to the substrate.

[0075] According to any of the foregoing embodiments of the first aspect of this application, the first film layer includes a conductive material.

[0076] According to any of the foregoing embodiments of the first aspect of this application, the second film layer includes a conductive material or an insulating material.

[0077] According to any of the foregoing embodiments of the first aspect of this application, both the first film layer and the second film layer comprise metallic materials, and the materials of the first film layer and the second film layer are different.

[0078] According to any of the foregoing embodiments of the first aspect of this application, the corrosion resistance of the second film layer is greater than that of the first film layer.

[0079] According to any of the foregoing embodiments of the first aspect of this application, the insulating material layer further includes a third film layer located on the side of the first film layer facing the substrate, wherein the orthographic projection of the first film layer on the substrate is located within the orthographic projection of the third film layer on the substrate.

[0080] According to any of the foregoing embodiments of the first aspect of this application, the isolation material layer is patterned through the first opening by a dry etching process; and the first groove is patterned through the second opening by a wet etching process.

[0081] According to any of the foregoing embodiments of the first aspect of this application, after the step of obtaining the insulating material layer having the first groove and before the step of preparing the second barrier layer on the side of the insulating material layer having the first groove facing away from the substrate, the method further includes:

[0082] The first barrier layer is peeled off.

[0083] A second aspect of this application provides a display panel, comprising: a substrate; a conductive layer located on the substrate and including an overlap portion; a planarization layer located on the substrate and including a via, wherein at least a portion of the overlap portion is exposed through the via; and an isolation structure located on the side of the planarization layer opposite to the substrate, the isolation structure enclosing and forming a plurality of isolation openings; the isolation structure includes a first film layer and a second film layer, the second film layer being located on the side of the first film layer opposite to the substrate, the second film layer having a slot, the orthographic projection of the slot onto the substrate being within the orthographic projection of the via onto the substrate.

[0084] According to an embodiment of the second aspect of this application, the first film layer includes a first portion and a second portion, the first portion being exposed by a slot, the second portion being located within the orthographic projection of the second film layer onto the substrate, and the thickness of the first portion being less than the thickness of the second portion.

[0085] According to any of the foregoing embodiments of the second aspect of this application, the first film layer includes a conductive material.

[0086] According to any of the foregoing embodiments of the second aspect of this application, the second film layer includes a conductive material or an insulating material.

[0087] According to any of the foregoing embodiments of the second aspect of this application, both the first film layer and the second film layer comprise metallic materials, and the materials of the first film layer and the second film layer are different.

[0088] According to any of the foregoing embodiments of the second aspect of this application, the size of the isolation opening in the first film layer parallel to the substrate is larger than the size of the isolation opening in the second film layer parallel to the substrate.

[0089] According to any of the foregoing embodiments of the second aspect of this application, the isolation structure further includes a third film layer located on the side of the first film layer facing the substrate, wherein the orthographic projection of the first film layer on the substrate is located within the orthographic projection of the third film layer on the substrate.

[0090] According to any of the foregoing embodiments of the second aspect of this application, the film thickness of the isolation structure inside the via is less than the film thickness of at least a portion of the isolation structure outside the via.

[0091] According to any of the foregoing embodiments of the second aspect of this application, the display panel further includes:

[0092] A first electrode layer, located between the planarization layer and the isolation structure, includes a plurality of mutually spaced first electrodes. The orthographic projection of the isolation opening onto the substrate overlaps with the orthographic projection of the corresponding first electrode onto the substrate. The orthographic projection of the via onto the substrate overlaps with the orthographic projection of the first electrode onto the substrate. The first electrodes and the overlapping portion are electrically connected through the vias. A pixel definition layer, located between the first electrode layer and the isolation structure, includes a pixel defining portion and a pixel opening formed by the pixel defining portion. The pixel opening communicates with the isolation opening.

[0093] According to any of the foregoing embodiments of the second aspect of this application, the isolation structure is located on the side of the pixel limiting portion away from the substrate.

[0094] According to any of the foregoing embodiments of the second aspect of this application, the pixel definition layer includes an inorganic insulating material; and / or, the planarization layer includes an organic insulating material.

[0095] According to any of the foregoing embodiments of the second aspect of this application, the pixel limiting portion is continuously disposed within the via.

[0096] According to any of the foregoing embodiments of the second aspect of this application, the pixel defining portion includes a first sub-portion and a second sub-portion, wherein the orthographic projection of the first sub-portion onto the substrate is located within the orthographic projection of the via onto the substrate, and the orthographic projection of the second sub-portion onto the substrate is located outside the orthographic projection of the via onto the substrate, and the thickness of the first sub-portion is less than the thickness of the second sub-portion.

[0097] According to any of the foregoing embodiments of the second aspect of this application, the second film layer includes a first portion and a second portion, the first portion and the second portion being projected onto the substrate outside the projection of the via onto the substrate, and the film thickness of the first portion being greater than the film thickness of the second portion.

[0098] According to any of the foregoing embodiments of the second aspect of this application, the second portion is located on the side of the first portion away from the via, and the second portion is located on the side of the first portion close to the isolation opening.

[0099] According to any of the foregoing embodiments of the second aspect of this application, the distance between the surface of the first portion facing away from the substrate and the substrate is a first distance, and the distance between the surface of the second portion facing away from the substrate and the substrate is a second distance, wherein the first distance is greater than the second distance.

[0100] According to any of the foregoing embodiments of the second aspect of this application, the display panel further includes a light-emitting device, at least a portion of which is located in a corresponding isolation opening. The light-emitting device includes a first electrode, a light-emitting unit, and a second electrode that are sequentially stacked along a direction away from the substrate. The first electrode and the overlapping portion are electrically connected through a via.

[0101] According to any of the foregoing embodiments of the second aspect of this application, the second electrode is electrically connected to the isolation structure.

[0102] According to any of the foregoing embodiments of the second aspect of this application, the isolation structure forms a recessed portion within the via.

[0103] According to any of the foregoing embodiments of the second aspect of this application, the display panel further includes a driving circuit layer located between the substrate and the planarization layer. The driving circuit layer includes pixel circuits, which are electrically connected to the overlapping portion, or the pixel circuits include the overlapping portion.

[0104] According to any of the foregoing embodiments of the second aspect of this application, the display panel further includes: a first encapsulation layer located on the side of the second electrode away from the substrate, the first encapsulation layer including a plurality of encapsulation portions.

[0105] According to any of the foregoing embodiments of the second aspect of this application, the orthographic projection of the package portion on the substrate is located outside the orthographic projection of the via on the substrate.

[0106] According to any of the foregoing embodiments of the second aspect of this application, the encapsulation portion extends through the isolation structure toward the sidewall of the isolation opening to the side of the isolation structure away from the substrate.

[0107] According to any of the foregoing embodiments of the second aspect of this application, a plurality of encapsulation portions are spaced apart, and / or the first encapsulation layer is an inorganic layer.

[0108] According to any of the foregoing embodiments of the second aspect of this application, the display panel further includes: a second encapsulation layer located on the side of the first encapsulation layer away from the substrate.

[0109] According to any of the foregoing embodiments of the second aspect of this application, the display panel further includes: a third encapsulation layer located on the side of the second encapsulation layer away from the substrate.

[0110] According to any of the foregoing embodiments of the second aspect of this application, the second encapsulation layer is an organic layer, and / or the third encapsulation layer is an inorganic layer.

[0111] An embodiment of the third aspect of this application provides a display device comprising a display panel prepared according to any embodiment of the first aspect or a display panel according to any embodiment of the second aspect.

[0112] According to the display panel fabrication method of this application embodiment, after preparing an isolation material layer on a substrate, a first barrier layer with a first opening is prepared, and the isolation material layer is patterned through the first opening to form a first groove on the isolation material layer. After forming the first groove on the isolation material layer, a second barrier layer with a second opening is prepared, such that the orthographic projection of the first groove on the substrate overlaps with the orthographic projection of the second opening on the substrate, facilitating subsequent patterning of the first groove through the second opening, thereby forming a first isolation opening on the isolation material layer. After forming the first groove on the isolation material layer, a second barrier layer is prepared. When the first barrier material layer is peeled off after forming the first groove, the second barrier layer can cover the area outside the first groove of the isolation material layer, thereby protecting the isolation material layer and avoiding damage to the first electrode inside the via by the wet etching solution during subsequent wet etching of the first groove. This ensures the structural integrity of the first electrode inside the via, provides a stable electrical signal to the first electrode, and improves the performance of the display panel. Attached Figure Description

[0113] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals denote the same or similar features, and the drawings are not drawn to scale.

[0114] Figure 1 This is a schematic flowchart of a method for manufacturing a display panel provided in an embodiment of this application;

[0115] Figures 2 to 18 This is a process diagram illustrating the fabrication of a display panel according to an embodiment of this application;

[0116] Figure 19 This is a partial cross-sectional view of a display panel provided in an embodiment of this application;

[0117] Figure 20 yes Figure 19 A magnified view of a portion of the image;

[0118] Figure 21 This is a partial cross-sectional view of a display panel provided in another embodiment.

[0119] Explanation of reference numerals in the attached figures:

[0120] 10. Display panel;

[0121] 100. Substrate;

[0122] 200. Isolation structure; 201. Isolation material layer; 202. First groove; 203. Second groove; 204. Third groove; 205. First recessed portion; 206. Second recessed portion; 207. Third recessed portion; 210. First membrane layer; 211. First section; 212. Second section; 220. Second membrane layer; 221. First part; 222. Second part; 223. Groove; 230. Third membrane layer; 240. Isolation opening; 241. First isolation opening; 242. Second isolation opening; 243. Third isolation opening;

[0123] 300, Light-emitting layer; 310, Light-emitting unit; 311, First light-emitting unit; 312, Second light-emitting unit; 313, Third light-emitting unit;

[0124] 400, First electrode layer; 410, First electrode;

[0125] 500, Pixel definition layer; 510, Pixel limiting section; 511, First sub-section; 512, Second sub-section; 520, Pixel opening;

[0126] 600, Second electrode layer; 610, Second electrode; 611, First sub-electrode; 612, Second sub-electrode; 613, Third sub-electrode;

[0127] 710. First barrier layer; 711. First opening; 720. Second barrier layer; 721. Second opening; 730. Third barrier layer; 731. Third opening; 740. Fourth barrier layer; 741. Fourth opening; 750. Fifth barrier layer; 751. Fifth opening; 760. Sixth barrier layer; 761. Sixth opening;

[0128] 800, planarization layer; 810, via;

[0129] 900, Conductive layer; 910, Overlapping portion; 920, First encapsulation layer; 921, Encapsulation portion; 930, Second encapsulation layer; 940, Third encapsulation layer;

[0130] D1, first distance; D2, second distance;

[0131] Z, thickness direction. Detailed Implementation

[0132] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0133] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0134] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0135] In some display panels, due to the presence of an isolation structure, it is possible to fabricate light-emitting units without using a precision mask. The light-emitting material is separated into light-emitting units by the isolation structure. When fabricating light-emitting units of different colors, the first color light-emitting material and electrode material are first deposited across the entire surface, allowing them to fall into the isolation opening and be encapsulated. Then, a portion of the encapsulation material and a portion of the first color light-emitting material and electrode material are etched away, leaving the first color light-emitting material and electrode material in the isolation opening, along with the encapsulation material covering the opening, forming a light-emitting unit of the first color and a second electrode (e.g., a cathode). This process is repeated to form light-emitting units of the second and third colors. However, during the etching process, the etching material may over-etch the isolation structure and pixel definition layer, exposing the underlying film layer, such as the anode. When subsequently etching the isolation structure to form the isolation openings corresponding to other color light-emitting units, the wet etching solution may come into contact with the first electrode (e.g., the anode), potentially damaging the first electrode (e.g., the anode) beneath the isolation structure. Especially in the recessed area formed by the downward indentation of the isolation structure, the film of the isolation structure itself is relatively thin. Before etching, the light-emitting material, electrode material and encapsulation material covering the recess are also relatively thin, or even missing. As a result, the isolation structure and pixel definition layer are easily etched through, exposing and damaging the first electrode (e.g., the anode), thus affecting the performance of the display panel.

[0136] To address the aforementioned issues, this application provides a method for manufacturing a display panel, a display panel, and a display device. The following description, in conjunction with the accompanying drawings, will illustrate various embodiments of the method for manufacturing the display panel, the display panel, and the display device.

[0137] This application provides a method for manufacturing a display panel, a display panel, and a display device. The display panel may be an organic light-emitting diode (OLED) display panel.

[0138] Please refer to the following: Figures 1 to 17 , Figure 1 This is a schematic flowchart of a method for manufacturing a display panel provided in an embodiment of this application; Figures 2 to 17This is a process diagram of the fabrication of a display panel provided in an embodiment of this application.

[0139] like Figures 1 to 7 As shown, the first aspect of this application provides a method for manufacturing a display panel 10, the method comprising:

[0140] Step S01: Prepare an isolation material layer on the substrate;

[0141] Step S02: Prepare a first barrier layer with a first opening on the side of the isolation material layer away from the substrate, and pattern the isolation material layer through the first opening to obtain an isolation material layer with a first groove;

[0142] Step S03: A second barrier layer is prepared on the side of the isolation material layer with the first groove away from the substrate. The second barrier layer has a second opening, and the orthographic projection of the first groove on the substrate overlaps with the orthographic projection of the second opening on the substrate.

[0143] Step S04: Pattern the first groove through the second opening to form an isolation material layer with the first isolation opening.

[0144] According to the manufacturing method of the display panel 10 of this application embodiment, after the isolation material layer 201 is prepared on the substrate 100 in step S01, a first barrier layer 710 with a first opening 711 is prepared in step S02, and the isolation material layer 201 is patterned through the first opening 711 to form a first groove 202 on the isolation material layer 201. After the first groove 202 is formed on the isolation material layer 201 in step S03, a second barrier layer 720 with a second opening 721 is prepared, and the orthographic projection of the first groove 202 on the substrate 100 overlaps with the orthographic projection of the second opening 721 on the substrate 100, so that the first groove 202 can be patterned through the second opening 721 in step S04 to enlarge the first groove 202, for example, by etching the sidewalls of the first groove 202, and / or etching the bottom of the first groove 202, thereby forming a first isolation opening 241 on the isolation material layer 201, and transforming the first groove 202 into the first isolation opening 241. After forming the first groove 202 on the isolation material layer 201, a second barrier layer 720 is prepared. When the first barrier material layer is peeled off after the formation of the first groove 202, the second barrier layer 720 can cover the area outside the first groove 202 of the isolation material layer 201, thereby protecting the isolation material layer 201 and preventing damage to the first electrode 410 in the via 810 caused by the wet etching solution during subsequent wet etching of the first groove 202. This ensures the structural integrity of the first electrode 410 within the via 810, provides a stable electrical signal to the first electrode 410, improves the dark spot problem of the display panel 10, and thus improves the display reliability and performance of the display panel 10. For example, the size of the first groove 202 is smaller than the size of the first isolation opening 241.

[0145] In some alternative embodiments, the surface of the insulating material layer 201 facing away from the substrate is recessed toward the substrate 100 to form a first recess 205. For example, at least a portion of the first recess 205 is projected onto the substrate 100 within the projection of the second barrier layer 720 onto the substrate 100. For example, the first recess 205 includes a bottom and a sidewall located on the side of the bottom away from the substrate.

[0146] In some optional embodiments, prior to the step of fabricating the isolation material layer 201 on the substrate 100, the fabrication method further includes: a planarization layer 800 on the substrate 100, the planarization layer 800 including vias 810, at least a portion of the vias 810 being projected onto the substrate 100 within the projected projection of the second barrier layer 720 onto the substrate 100; and a first isolation opening 241 being projected onto the substrate 100 outside the projected projection of the vias 810 onto the substrate 100. The isolation material layer 201 is recessed within the vias 810 to form a first recess 205. For example, at least a portion of the second barrier layer 720 fills the first recess 205. The vias 810 may be located in a display area or a non-display area. For example, the thickness of the isolation material layer 201 in the first recess 205 is less than the thickness of at least a portion of the isolation material layer 201 outside the first recess 205. For example, the thickness of the insulating material layer 201 inside the via 810 is less than at least a portion of the thickness of the insulating material layer 201 outside the via 810.

[0147] In some optional embodiments, prior to the step of fabricating the insulating material layer 201 on the substrate 100, the method further includes:

[0148] A conductive layer 900 and a planarization layer 800 are sequentially prepared on a substrate 100. The conductive layer 900 includes an overlap portion 910, and the planarization layer 800 includes a via 810. At least a portion of the overlap portion 910 is exposed through the via 810.

[0149] A first electrode layer 400 is formed on the side of the planarization layer 800 facing away from the substrate 100. The first electrode layer 400 includes a plurality of first electrodes 410 spaced apart from each other. The first electrodes 410 and the overlapping portion 910 are electrically connected through vias 810. At least a portion of the vias 810 are projected onto the substrate 100 within the projection of the second barrier layer 720 onto the substrate 100. A first isolation opening 241 exposes a portion of the corresponding first electrode 410. The projection of the first isolation opening 241 onto the substrate 100 is outside the projection of the vias 810 onto the substrate 100. That is, the projection of the first isolation opening 241 onto the substrate 100 is offset from the projection of the vias 810 onto the substrate 100.

[0150] In these alternative embodiments, the first electrode 410 is electrically connected to the overlap portion 910 of the underlying conductive layer 900 through a via 810 on the planarization layer 800, thereby providing an electrical signal to the first electrode 410. Due to the presence of via 810, the thickness of the insulating material layer 201 becomes very thin when deposited within the via 810. Therefore, the portion of the insulating material layer 201 within the via 810 is easily over-etched away by subsequent etching processes, exposing the first electrode 410. This leads to damage to the first electrode 410 by subsequent wet etching processes. At least a portion of the via 810's orthogonal projection onto the substrate 100 lies within the orthogonal projection of the second barrier layer 720 onto the substrate 100. In other words, the second barrier layer 720 covers the portion of the insulating material layer 201 within the via 810, thus protecting the weak portion of the insulating material layer 201 within the via 810 and the first electrode 410. This avoids damage to the first electrode 410 within the via 810 caused by the wet etching solution during subsequent wet etching of the first groove 202, ensuring the structural integrity of the first electrode 410 within the via 810, and providing a stable electrical signal to the first electrode 410, thereby improving the performance of the display panel 10. A portion of the first electrode 410 is exposed through the first isolation opening 241, allowing the first electrode 410 to serve as the first electrode 410 of the subsequent first light-emitting unit 311, driving the first light-emitting unit 311 to emit light. The orthographic projection of the first isolation opening 241 onto the substrate 100 is located outside the orthographic projection of the via 810 onto the substrate 100, thus avoiding the via 810 from affecting the light emission of the first light-emitting unit 311.

[0151] In some optional embodiments, after obtaining the insulating material layer 201 with the first groove 202 and before the step of preparing the second barrier layer 720 on the side of the insulating material layer 201 with the first groove 202 facing away from the substrate 100, the preparation method further includes:

[0152] The first barrier layer 710 can be peeled off, and the first groove 202 can be rinsed.

[0153] In these optional embodiments, when the isolation material layer 201 is dry-etched to form the first groove 202, the reaction byproducts generated during dry etching will cover the inner wall of the isolation material layer 201 in the first groove 202. When the first groove 202 is subsequently wet-etched, the wet etching solution will be blocked by the reaction byproducts, resulting in poor wet etching effect. Therefore, after the first groove 202 is formed, other types of wet etching solutions are used to peel off the first barrier layer 710 and simultaneously rinse the first groove 202, so that when the first groove 202 is wet-etched again, a better etching effect can be produced, thereby forming the first isolation opening 241.

[0154] like Figure 5As shown, in some optional embodiments, the insulating material layer 201 with the first groove 202 is recessed within the via 810 (which may include vias corresponding to some or all of the light-emitting units) to form a first recess 205, and at least a portion of the first recess 205 is projected onto the substrate 100 in the orthogonal projection of the second barrier layer 720 onto the substrate 100. For example, at least a portion of the first recess 205 is projected onto the substrate 100 in the orthogonal projection of the first barrier layer 710 onto the substrate 100.

[0155] In these optional embodiments, the isolation material layer 201 forms a first recess 205 in the via 810. The first recess 205 is covered by a second barrier layer 720, which protects the weak part of the isolation material layer 201 and the first electrode 410 in the via 810. This avoids the problem of the wet etching solution damaging the first electrode 410 in the via 810 when the first groove 202 is wet-etched later. It ensures the structural integrity of the first electrode 410 in the via 810 and provides a stable electrical signal to the first electrode 410, thereby improving the performance of the display panel 10.

[0156] Optionally, the orthographic projection of the first groove 202 onto the substrate 100 is located within the orthographic projection of the second opening 721 onto the substrate 100, which facilitates the subsequent patterning of the first groove 202 through the second opening 721 in step S04, thereby forming the first isolation opening 241 on the isolation material layer 201.

[0157] like Figure 5 As shown, in some optional embodiments, the second opening 721 is spaced apart from the orthographic projection edge of the first groove 202 on the substrate 100. For example, the distance d1 between the outer contour of the second opening 721 and the outer contour of the first groove 202 on the substrate 100 is greater than or equal to 3 micrometers to improve the side-marking effect and enhance the isolation effect of the sidewall of the first isolation opening. d1 can be 3 micrometers, 4 micrometers, 5 micrometers, etc.

[0158] In these optional embodiments, the projected area of ​​the second opening 721 on the substrate 100 is larger than the projected area of ​​the first groove 202 on the substrate 100, and the projected area of ​​the second opening 721 on the substrate 100 is located within the projected area of ​​the first groove 202 on the substrate 100. The edge of the second opening 721 near the edge of the first groove 202 is spaced apart from the edge of the first groove 202 by a certain distance. This avoids the problem that when the second barrier layer 720 is prepared, it falls into the first groove 202 and covers the inner wall surface of the isolation material layer 201 of the first groove 202, which would cause the second barrier layer 720 to block the wet etching solution in the subsequent wet etching process, resulting in poor wet etching effect on the first groove 202.

[0159] Optionally, the first groove 202 can be a blind groove or a through groove. When the first groove 202 is a blind groove, the wet etching solution can etch the isolation material layer 201 along the side facing the substrate 100 to etch the bottom of the first groove 202, thereby increasing the depth of the first groove 202. The wet etching solution can also etch the isolation material layer 201 in a direction parallel to the substrate 100 to etch the sidewalls of the first groove 202, thereby increasing the size of the cross-section of the first groove 202 perpendicular to or parallel to the substrate 100. When the first groove 202 is a through groove, the wet etching solution can etch the isolation material layer 201 in a direction parallel to the substrate 100, thus effectively etching the first isolation opening 241.

[0160] like Figure 8 As shown, in some optional embodiments, after step S04, the method further includes:

[0161] The first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer are prepared sequentially.

[0162] The first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer are patterned to form a first light-emitting unit 311, a first sub-electrode 611, and a first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100, corresponding to the first isolation opening 241.

[0163] The first light-emitting unit 311 and the first sub-electrode 611 corresponding to the first isolation opening 241 refer to the first light-emitting unit 311 and the first sub-electrode 611 whose orthogonal projections onto the substrate 100 are located within the orthogonal projection of the first isolation opening 241 onto the substrate 100. At least a portion of the first light-emitting unit 311 and / or at least a portion of the first sub-electrode 611 may be located in the first isolation opening 241. At least a portion means partially or entirely.

[0164] In these alternative embodiments, after forming the first isolation opening 241, a first light-emitting unit 311, a first sub-electrode 611, and a first encapsulation part corresponding to the first isolation opening 241 are prepared. The first light-emitting unit 311, the first sub-electrode 611, and the first encapsulation part are prepared directly through the isolation effect of the isolation material layer 201, without the need to use a precision mask, thus reducing process costs.

[0165] Optionally, the orthographic projection of the first encapsulation portion onto the substrate 100 is located outside the orthographic projection of the via 810 onto the substrate 100. The first encapsulation portion does not cover the via 810, but uses a first barrier layer, a second barrier layer, etc., as protective portions to cover the isolation material layer at the via 810, so as to avoid the problem of the wet etching solution damaging the first electrode 410 inside the via 810 during the fabrication of the isolation opening 240, ensuring the structural integrity of the first electrode 410 inside the via 810, realizing the provision of a stable electrical signal to the first electrode 410, improving the dark spot problem of the display panel 10, thereby improving the display reliability and performance of the display panel 10.

[0166] Optionally, after the step of forming the isolation material layer with the first isolation opening 241 and before the steps of sequentially preparing the first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer, the preparation method further includes: peeling off the second barrier layer 720 and rinsing the first isolation opening 241. The second barrier layer 720 can be peeled off before forming the pixel opening 520 corresponding to the first isolation opening 241.

[0167] like Figures 9 to 12 As shown, in some optional embodiments, after forming the first light-emitting unit 311 corresponding to the first isolation opening 241, the first sub-electrode 611, and the first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100, the method further includes:

[0168] The isolation material layer 201 with the first isolation opening 241 is patterned to obtain an isolation material layer 201 with the first isolation opening 241 and the second isolation opening 242. The first isolation opening 241 and the second isolation opening 242 are spaced apart in the orthographic projection of the substrate 100.

[0169] In these optional embodiments, after the first isolation opening 241 is formed in the isolation material layer 201, the isolation material layer 201 is then patterned to obtain the second isolation opening 242. The first isolation opening 241 and the second isolation opening 242 are fabricated independently, which can reduce the mutual influence between the fabrication processes of the first isolation opening 241 and the second isolation opening 242, and ensure that the dimensions of the first isolation opening 241 and the second isolation opening 242 are controllable. Furthermore, the step of forming the second isolation opening 242 is located after the steps of forming the first light-emitting unit 311, the first sub-electrode 611 and the first encapsulation part 921 corresponding to the first isolation opening 241. The first encapsulation part 921 encapsulates and protects the first isolation opening 241, which can prevent the etching process of forming the second isolation opening 242 from affecting the interior of the first isolation opening 241.

[0170] like Figures 9 to 12As shown, in some optional embodiments, the step of patterning the isolation material layer 201 having the first isolation opening 241 further includes:

[0171] A third barrier layer 730 with a third opening 731 is prepared on the side of the isolation material layer 201 with a first isolation opening 241 facing away from the substrate 100, and the isolation material layer 201 with the first isolation opening 241 is patterned through the third opening 731 to obtain an isolation material layer 201 with a first isolation opening 241 and a second groove 203, wherein the second groove 203 is spaced apart from the first isolation opening 241 in the orthogonal projection on the substrate 100.

[0172] A fourth barrier layer 740 is prepared on the side of the isolation material layer 201 having a first isolation opening 241 and a second groove 203 away from the substrate 100. The fourth barrier layer 740 has a fourth opening 741. The orthographic projection of the second groove 203 on the substrate 100 overlaps with the orthographic projection of the fourth opening 741 on the substrate 100. For example, the orthographic projection of the second groove 203 on the substrate 100 is located within the orthographic projection of the fourth opening 741 on the substrate 100.

[0173] The second groove 203 is patterned through the fourth opening 741 to form an isolation material layer 201 with a first isolation opening 241 and a second isolation opening 242.

[0174] In these optional embodiments, a third barrier layer 730 with a third opening 731 is formed on the side of the isolation material layer 201 facing away from the substrate 100, and the isolation material layer 201 is patterned through the third opening 731 to form a second groove 203 on the isolation material layer 201. After forming the second groove 203 on the isolation material layer 201, a fourth barrier layer 740 with a fourth opening 741 is formed, such that the orthographic projection of the second groove 203 on the substrate 100 is located within the orthographic projection of the fourth opening 741 on the substrate 100, which facilitates subsequent patterning of the second groove 203 through the fourth opening 741 to enlarge the second groove 203, for example, by etching the sidewalls of the second groove 203, and / or etching the bottom of the second groove 203, thereby forming a second isolation opening 242 on the isolation material layer 201, transforming the second groove 203 into the second isolation opening 242. After forming the second groove 203 on the isolation material layer 201, a fourth barrier layer 740 is prepared. When the third barrier material layer is peeled off after the second groove 203 is formed, the fourth barrier layer 740 can cover the area of ​​the isolation material layer 201 outside the second groove 203, thereby protecting the isolation material layer 201 and avoiding damage to the first electrode 410 in the via 810 caused by the wet etching solution during subsequent wet etching of the second groove 203. This ensures the structural integrity of the first electrode 410 in the via 810, provides a stable electrical signal to the first electrode 410, and improves the performance of the display panel 10. For example, the size of the second groove 203 is smaller than the size of the second isolation opening 242.

[0175] like Figure 11 As shown, optionally, at least a portion of the via 810 is projected onto the substrate 100 within the projection of the fourth barrier layer 740 onto the substrate 100. That is, the fourth barrier layer 740 covers the portion of the isolation material layer 201 located within the via 810, thereby protecting the weak portion of the isolation material layer 201 within the via 810 and the first electrode 410. This avoids damage to the first electrode 410 within the via 810 caused by the wet etching solution during subsequent wet etching of the second groove 203, ensuring the structural integrity of the first electrode 410 within the via 810, and providing a stable electrical signal to the first electrode 410, thereby improving the performance of the display panel 10.

[0176] like Figure 11As shown, in some optional embodiments, the insulating material layer 201 with the second groove 203 is recessed within the via 810 (which may include vias corresponding to some or all of the light-emitting units) to form a second recess 206. At least a portion of the second recess 206 is projected onto the substrate 100 within the projected image of the fourth barrier layer 740 onto the substrate 100. At least a portion of the fourth barrier layer 740 fills the second recess 206. The second recess 206 and the first recess 205 may correspond to the same via or different vias. For example, the film thickness of the insulating material layer 201 in the second recess 206 is less than the film thickness of the insulating material layer 201 outside the second recess 206.

[0177] In these optional embodiments, the insulating material layer 201 with the second groove 203 forms a second recess 206 in the via 810. The second recess 206 is covered by the fourth barrier layer 740, which protects the weak part of the insulating material layer 201 and the first electrode 410 in the via 810. This avoids the problem of the wet etching solution damaging the first electrode 410 in the via 810 when the second groove 203 is wet-etched. It ensures the structural integrity of the first electrode 410 in the via 810 and provides a stable electrical signal to the first electrode 410, thereby improving the performance of the display panel 10.

[0178] like Figure 10 and Figure 11 As shown, in some optional embodiments, the edge of the fourth opening 741 projected onto the substrate 100 and the edge of the second groove 203 projected onto the substrate 100 are spaced apart. For example, the distance d2 between the outer contour of the fourth opening 741 projected onto the substrate 100 and the outer contour of the second groove 203 projected onto the substrate 100 is greater than or equal to 3 micrometers to improve the side-marking effect and enhance the isolation effect of the sidewall of the second isolation opening. d2 can be 3 micrometers, 4 micrometers, 5 micrometers, etc.

[0179] In these optional embodiments, the projected area of ​​the fourth opening 741 on the substrate 100 is larger than the projected area of ​​the second groove 203 on the substrate 100, and the projected area of ​​the fourth opening 741 on the substrate 100 is located within the projected area of ​​the second groove 203 on the substrate 100. The edge of the fourth opening 741 near the edge of the second groove 203 is spaced apart from the edge of the second groove 203 by a certain distance. This avoids the problem that when the fourth barrier layer 740 is prepared, it falls into the second groove 203 and covers the inner wall surface of the isolation material layer 201 in the second groove 203, which would cause the fourth barrier layer 740 to block the wet etching solution in the subsequent wet etching process, resulting in poor wet etching effect on the second groove 203.

[0180] Optionally, the second groove 203 can be a blind groove or a through groove. When the second groove 203 is a blind groove, the wet etching solution can etch the isolation material layer 201 along the side facing the substrate 100 to etch the bottom of the second groove 203, thereby increasing the depth of the second groove 203. The wet etching solution can also etch the isolation material layer 201 in a direction parallel to the substrate 100 to etch the sidewalls of the second groove 203, thereby increasing the size of the cross-section of the second groove 203 perpendicular to or parallel to the substrate 100. When the second groove 203 is a through groove, the wet etching solution can etch the isolation material layer 201 in a direction parallel to the substrate 100, thus effectively etching the second isolation opening 242.

[0181] In some optional embodiments, after obtaining the isolation material layer 201 having the first isolation opening 241 and the second groove 203, and before preparing the fourth barrier layer 740 on the side of the isolation material layer 201 having the first isolation opening 241 and the second groove 203 facing away from the substrate 100, the preparation method further includes:

[0182] The third barrier layer 730 can be peeled off, and the second groove 203 can be rinsed.

[0183] In these optional embodiments, when the isolation material layer 201 is dry-etched to form the second groove 203, the reaction byproducts generated during dry etching cover the inner wall of the second groove 203. When the second groove 203 is subsequently wet-etched, the wet etching solution is blocked by these byproducts, resulting in poor wet etching performance. Therefore, after forming the second groove 203, using other types of wet etching solutions to peel off the third barrier layer 730 and simultaneously rinse the second groove 203 allows for better etching results during subsequent wet etching of the second groove 203, thereby forming the second isolation opening 242. For example... Figure 13 As shown, in some optional embodiments, after obtaining the insulating material layer 201 having the first insulating opening 241 and the second insulating opening 242, the method further includes:

[0184] The second light-emitting material layer, the second electrode 610 material layer, and the second encapsulation material layer are prepared sequentially.

[0185] The second light-emitting material layer, the second electrode 610 material layer, and the second encapsulation material layer are patterned to form a second light-emitting unit 312, a second sub-electrode 612, and a second encapsulation portion located on the side of the second sub-electrode 612 away from the substrate 100, corresponding to the second isolation opening 242.

[0186] The second light-emitting unit 312 and the second sub-electrode 612 corresponding to the second isolation opening 242 refer to the second light-emitting unit 312 and the second sub-electrode 612 whose orthogonal projections onto the substrate 100 are located within the orthogonal projections of the second isolation opening 242 onto the substrate 100. At least a portion of the second light-emitting unit 312 and / or at least a portion of the second sub-electrode 612 may be located in the second isolation opening 242.

[0187] In these alternative embodiments, after forming the second isolation opening 242, a second light-emitting unit 312, a second sub-electrode 612, and a second encapsulation part corresponding to the second isolation opening 242 are prepared. The second light-emitting unit 312, the second sub-electrode 612, and the second encapsulation part are prepared directly through the isolation effect of the isolation material layer 201, without the need to use a precision mask, thus reducing process costs.

[0188] Optionally, the orthographic projection of the second encapsulation portion onto the substrate 100 is located outside the orthographic projection of the via 810 onto the substrate 100. The second encapsulation portion does not cover the via 810, but uses a third barrier layer, a fourth barrier layer, etc., as a protective portion to cover the isolation material layer at the via 810, so as to avoid the problem of the wet etching solution damaging the first electrode 410 inside the via 810 during the preparation of the isolation opening 240, ensuring the structural integrity of the first electrode 410 inside the via 810, realizing the provision of a stable electrical signal to the first electrode 410, improving the dark spot problem of the display panel 10, thereby improving the display reliability and performance of the display panel 10.

[0189] Optionally, the first light-emitting unit 311 and the second light-emitting unit 312 emit different colors. The first light-emitting unit 311 emits one of red, green, or blue. The second light-emitting unit 312 emits one of red, green, or blue.

[0190] Optionally, the first isolation opening 241 and the second isolation opening 242 can be prepared simultaneously. Then, a first light-emitting unit 311, a first sub-electrode 611, and a first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100 corresponding to the first isolation opening 241 are prepared. Then, a second light-emitting unit 312, a second sub-electrode 612, and a second encapsulation portion located on the side of the second sub-electrode 612 away from the substrate 100 corresponding to the second isolation opening 242 are prepared.

[0191] Optionally, after the step of forming the isolation material layer with the second isolation opening 242 and before the steps of sequentially preparing the second light-emitting material layer, the second electrode material layer, and the second encapsulation material layer, the preparation method further includes: peeling off the fourth barrier layer 740 and rinsing the second isolation opening 242. The fourth barrier layer 740 can be peeled off before forming the pixel opening 520 corresponding to the second isolation opening 242.

[0192] like Figures 14 to 17 As shown, in some optional embodiments, before step S02, the method further includes:

[0193] The isolation material layer 201 is patterned to obtain an isolation material layer 201 with a third isolation opening 243.

[0194] In these alternative embodiments, before the step of preparing the first barrier layer 710 with the first opening 711 on the side of the isolation material layer 201 facing away from the substrate 100, the isolation material layer 201 is patterned to obtain the third isolation opening 243. The third isolation opening 243 and the first isolation opening 241 are prepared independently, which can reduce the mutual influence of the manufacturing processes of the first isolation opening 241 and the third isolation opening 243 and ensure that the size of the first isolation opening 241 and the third isolation opening 243 is controllable.

[0195] Optionally, the first isolation opening 241 and the third isolation opening 243 are spaced apart in the orthographic projection of the substrate 100.

[0196] like Figures 14 to 17 As shown, in some optional embodiments, the step of patterning the isolation material layer 201 to obtain the isolation material layer 201 with the third isolation opening 243 further includes:

[0197] A fifth barrier layer 750 with a fifth opening 751 is prepared on the side of the isolation material layer 201 away from the substrate 100, and the isolation material layer 201 is patterned through the fifth opening 751 to obtain an isolation material layer 201 with a third groove 204.

[0198] The third groove 204 is patterned to form an isolation material layer 201 with a third isolation opening 243.

[0199] In these optional embodiments, a fifth barrier layer 750 with a fifth opening 751 is formed on the side of the isolation material layer 201 facing away from the substrate 100, and the isolation material layer 201 is patterned through the fifth opening 751 to form a third groove 204 on the isolation material layer 201. After forming the third groove 204 on the isolation material layer 201, a sixth barrier layer 760 with a sixth opening 761 is formed, such that the orthographic projection of the third groove 204 on the substrate 100 is located within the orthographic projection of the sixth opening 761 on the substrate 100, which facilitates subsequent patterning of the third groove 204 through the sixth opening 761 to enlarge the third groove 204, for example, by etching the sidewalls of the third groove 204, and / or etching the bottom of the third groove 204, thereby forming a third isolation opening 243 on the isolation material layer 201, transforming the third groove 204 into the third isolation opening 243. After forming the third groove 204 on the isolation material layer 201, a sixth barrier layer 760 is prepared. When the fifth barrier material layer is peeled off after the formation of the third groove 204, the sixth barrier layer 760 can cover the area of ​​the isolation material layer 201 outside the third groove 204, thereby protecting the isolation material layer 201 and avoiding damage to the first electrode 410 in the via 810 caused by the wet etching solution during subsequent wet etching of the third groove 204. This ensures the structural integrity of the first electrode 410 within the via 810, provides a stable electrical signal to the first electrode 410, and improves the performance of the display panel 10. For example, the size of the third groove 204 is smaller than the size of the third isolation opening 243.

[0200] Before wet etching of the third groove 204, no light-emitting material, electrode material, or encapsulation material was prepared, and no dry etching was performed on the via 810. Therefore, there is no over-etching of the isolation material layer 201 and the pixel definition material layer at the via 810. However, since the isolation material layer 201 and the pixel definition material layer in the via 810 are thin or even missing, setting the sixth barrier layer 760 can further reduce the risk of the first electrode 410 being exposed and etched due to the thinness or absence of the isolation material layer 201 and the pixel definition material layer.

[0201] In some optional embodiments, before patterning the third groove 204 to form the isolation material layer 201 with the third isolation opening 243, it is not necessary to form the light-emitting material, electrode material, or encapsulation material, or to pattern the light-emitting material, electrode material, or encapsulation material. Therefore, during the process of patterning the third groove 204 to form the isolation material layer 201 with the third isolation opening 243, the second film layer 210 in the isolation material layer 201 is not damaged or missing at the recess or via 810, and the second film layer does not form a groove or is missing in the via. Therefore, the second film layer in the isolation material layer 201 can be used as a mask barrier layer, and there is no need to set a sixth barrier layer.

[0202] like Figures 14 to 17 As shown, in some optional embodiments, prior to the step of patterning the third groove 204, the method further includes:

[0203] A sixth barrier layer 760 is formed on the side of the isolation material layer 201 with the third groove 204 away from the substrate 100. The sixth barrier layer 760 has a sixth opening 761. The orthographic projection of the third groove 204 on the substrate 100 overlaps with the orthographic projection of the sixth opening 761 on the substrate 100. For example, the orthographic projection of the third groove 204 on the substrate 100 is located within the orthographic projection of the sixth opening 761 on the substrate 100.

[0204] Optionally, at least a portion of the via 810 is projected onto the substrate 100 within the projection of the sixth barrier layer 760 onto the substrate 100. That is, the sixth barrier layer 760 covers the portion of the insulating material layer 201 located within the via 810, thereby protecting the weak portion of the insulating material layer 201 within the via 810 and the first electrode 410. This avoids damage to the first electrode 410 within the via 810 caused by the wet etching solution during subsequent wet etching of the third groove 204, ensuring the structural integrity of the first electrode 410 within the via 810, and providing a stable electrical signal to the first electrode 410, thereby improving the performance of the display panel 10.

[0205] In some optional embodiments, the insulating material layer 201 having a third groove 204 is recessed within the via 810 (which may include vias corresponding to some or all of the light-emitting units) to form a third recess 207, at least a portion of the third recess 207 having its orthographic projection on the substrate 100 within the orthographic projection of the sixth barrier layer 760 on the substrate 100. At least a portion of the sixth barrier layer 760 may fill the third recess 207. The third recess 207 and the first recess 205 may correspond to the same or different vias. The second recess 206 and the third recess 207 may correspond to the same or different vias. For example, the film thickness of the insulating material layer 201 in the third recess 207 is less than the film thickness of at least a portion of the insulating material layer 201 outside the third recess 207.

[0206] In these optional embodiments, the insulating material layer 201 with the third groove 204 forms a third recess 207 in the via 810. The third recess 207 is covered by the sixth barrier layer 760, which protects the weak part of the insulating material layer 201 and the first electrode 410 in the via 810. This avoids the problem of the wet etching solution damaging the first electrode 410 in the via 810 when the third groove 204 is wet-etched. It ensures the structural integrity of the first electrode 410 in the via 810 and provides a stable electrical signal to the first electrode 410, thereby improving the performance of the display panel 10.

[0207] In some optional embodiments, the edge of the sixth opening 761 projected onto the substrate 100 is spaced apart from the edge of the third groove 204 projected onto the substrate 100. For example, the distance d3 between the outer contour of the sixth opening 761 projected onto the substrate 100 and the outer contour of the third groove 204 projected onto the substrate 100 is greater than or equal to 3 micrometers to improve the side-marking effect and enhance the isolation effect of the sidewall of the third isolation opening. d3 can be 3 micrometers, 4 micrometers, 5 micrometers, etc.

[0208] In these optional embodiments, the projected area of ​​the sixth opening 761 on the substrate 100 is larger than the projected area of ​​the third groove 204 on the substrate 100, and the projected area of ​​the sixth opening 761 on the substrate 100 is located within the projected area of ​​the third groove 204 on the substrate 100. The edge of the sixth opening 761 near the edge of the third groove 204 is spaced apart from the edge of the third groove 204 by a certain distance. This avoids the problem that when the sixth barrier layer 760 is prepared, it falls into the third groove 204 and covers the inner wall of the isolation material layer 201 on the third groove 204, which would cause the sixth barrier layer 760 to block the wet etching solution in the subsequent wet etching process, resulting in poor wet etching effect on the third groove 204.

[0209] Optionally, the third groove 204 can be a blind groove or a through groove. When the third groove 204 is a blind groove, the wet etching solution can etch the isolation material layer 201 along the side facing the substrate 100 to etch the bottom of the third groove 204, thereby increasing the depth of the third groove 204. The wet etching solution can also etch the isolation material layer 201 in a direction parallel to the substrate 100 to etch the sidewalls of the third groove 204, thereby increasing the cross-sectional dimensions of the third groove 204 perpendicular to or parallel to the substrate 100. When the third groove 204 is a through groove, the wet etching solution can etch the isolation material layer 201 in a direction parallel to the substrate 100, thus effectively etching the third isolation opening 243.

[0210] In some alternative embodiments, after obtaining the insulating material layer 201 with the third groove 204 and before forming the sixth barrier layer 760 on the side of the insulating material layer 201 with the third groove 204 facing away from the substrate 100, the method further includes:

[0211] The fifth barrier layer 750 can be peeled off, and the third groove 204 can be rinsed.

[0212] In these optional embodiments, when the isolation material layer 201 is dry-etched to form the third groove 204, the reaction byproducts generated during dry etching cover the inner wall of the isolation material layer 201 in the third groove 204. When the third groove 204 is subsequently wet-etched, the wet etching solution is blocked by these byproducts, resulting in poor wet etching performance. Therefore, after forming the third groove 204, using other types of wet etching solutions to peel off the fifth barrier layer 750 and simultaneously rinse the third groove 204 allows for better etching results when the third groove 204 is subsequently wet-etched, thereby forming the third isolation opening 243.

[0213] like Figure 18 As shown, in some optional embodiments, after obtaining the isolation material layer 201 with the third isolation opening 243 and before the step of preparing the first barrier layer 710 with the first opening 711 on the side of the isolation material layer 201 facing away from the substrate 100, the preparation method further includes:

[0214] The third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer are prepared sequentially.

[0215] The third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer are patterned to form a third light-emitting unit 313, a third sub-electrode 613, and a third encapsulation portion located on the side of the third sub-electrode 613 away from the substrate 100, corresponding to the third isolation opening 243.

[0216] The third light-emitting unit 313 and the third sub-electrode 613 corresponding to the third isolation opening 243 refer to the third light-emitting unit 313 and the third sub-electrode 613 whose orthogonal projections onto the substrate 100 are located within the orthogonal projections of the third isolation opening 243 onto the substrate 100. At least a portion of the third light-emitting unit 313 and / or at least a portion of the third sub-electrode 613 may be located in the third isolation opening 243.

[0217] In these optional embodiments, after forming the third isolation opening 243, a third light-emitting unit 313, a third sub-electrode 613, and a third encapsulation portion corresponding to the third isolation opening 243 are fabricated. The third light-emitting unit 313, the third sub-electrode 613, and the third encapsulation portion are directly fabricated through the isolation effect of the isolation material layer 201, without the need for a precision mask, thus reducing process costs. Furthermore, the step of forming the first isolation opening 241 occurs after the step of forming the third light-emitting unit 313, the third sub-electrode 613, and the third encapsulation portion corresponding to the third isolation opening 243. The third encapsulation portion encapsulates and protects the third isolation opening 243, preventing the etching process from affecting the interior of the third isolation opening 243. The third light-emitting unit 313 and the first light-emitting unit 311 emit different colors. The third light-emitting unit 313, the first light-emitting unit 311, and the second light-emitting unit 312 emit different colors. The emission color of the third light-emitting unit 313 can be one of red, green, or blue.

[0218] Optionally, the orthographic projection of the third encapsulation portion onto the substrate 100 is located outside the orthographic projection of the via 810 onto the substrate 100. The third encapsulation portion does not cover the via 810, but uses a fifth barrier layer, a sixth barrier layer, etc., as protective portions to cover the isolation material layer at the via 810, so as to avoid the problem of the wet etching solution damaging the first electrode 410 inside the via 810 during the fabrication of the isolation opening 240, ensuring the structural integrity of the first electrode 410 inside the via 810, realizing the provision of a stable electrical signal to the first electrode 410, improving the dark spot problem of the display panel 10, thereby improving the display reliability and performance of the display panel 10.

[0219] In some optional embodiments, during the patterning of the third groove 204 to form an isolation material layer 201 with a third isolation opening 243, the second film layer 220 in the isolation material layer 201 is undamaged or missing at the recess or via 810, and the second film layer does not form grooves or missing parts within the via. Therefore, the second film layer in the isolation material layer 201 can be used as a mask barrier layer, and a sixth barrier layer is not provided. Subsequently, the third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer are patterned. The etching solution used in this process may cause damage to the second film layer 220, resulting in grooves or missing parts within the via. Subsequently, during the formation of the first isolation opening, a second barrier layer is provided, and during the formation of the second isolation opening, a fourth barrier layer is provided. This can reduce the risk of further damage to the second film layer 220, leading to over-etching damage to the film layer below the second film layer 220.

[0220] Optionally, after forming the corresponding isolation opening, the pixel definition material layer is patterned to form a pixel opening that is connected to the isolation opening, and then the corresponding light-emitting material layer is prepared.

[0221] Optionally, the first isolation opening 241 may include a first sub-isolation opening and a second sub-isolation opening. The first light-emitting unit includes a first sub-light-emitting unit and a second sub-light-emitting unit. After the first isolation opening 241 is formed, a first light-emitting material layer, a first electrode material layer, and a first encapsulation material layer corresponding to the first sub-light-emitting unit are prepared and patterned to form a first sub-light-emitting unit, a first sub-electrode 611, and a first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100. Then, a second sub-light-emitting unit 312, a first sub-electrode 611, and a first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100 are formed by preparing a first light-emitting material layer, a first electrode material layer, and a first encapsulation material layer corresponding to the second sub-light-emitting unit and patterning them. The first sub-light-emitting unit and the second sub-light-emitting unit may emit different colors. The emission color of the first sub-light-emitting unit may be one of red, green, and blue. The emission color of the second sub-light-emitting unit may be one of red, green, and blue. For example, the first sub-isolation opening and the second sub-isolation opening are spaced apart in the orthographic projection of the substrate.

[0222] Optionally, the first isolation opening 241 and the second isolation opening 242 can be formed simultaneously. Then, a first light-emitting unit 311, a first sub-electrode 611, and a first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100 are prepared corresponding to the first isolation opening 241. Then, a second light-emitting unit 312, a second sub-electrode 612, and a second encapsulation portion located on the side of the second sub-electrode 612 away from the substrate 100 are prepared corresponding to the second isolation opening 242. Then, a third isolation opening 243 is formed. Then, a third light-emitting unit 313, a third sub-electrode 613, and a third encapsulation portion located on the side of the third sub-electrode 613 away from the substrate 100 are prepared corresponding to the third isolation opening 243.

[0223] Optionally, the first isolation opening 241 and the third isolation opening 243 can be formed simultaneously. Then, a third light-emitting unit 313, a third sub-electrode 613 corresponding to the third isolation opening 243 and a third encapsulation portion located on the side of the third sub-electrode 613 away from the substrate 100 are prepared. Then, a first light-emitting unit 311, a first sub-electrode 611 corresponding to the first isolation opening 241 and a first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100 are prepared.

[0224] Optionally, the first isolation opening 241 and the third isolation opening 243 can be formed simultaneously. Then, a first light-emitting unit 311, a first sub-electrode 611, and a first encapsulation portion located on the side of the first sub-electrode 611 away from the substrate 100 are prepared corresponding to the first isolation opening 241. Then, a third light-emitting unit 313, a third sub-electrode 613, and a third encapsulation portion located on the side of the third sub-electrode 613 away from the substrate 100 are prepared corresponding to the third isolation opening 243.

[0225] Optionally, after the step of forming the isolation material layer with the third isolation opening 243 and before the steps of sequentially preparing the third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer, the preparation method further includes: peeling off the sixth barrier layer 760, and rinsing the third isolation opening 243. The sixth barrier layer 760 can be peeled off before forming the pixel opening 520 corresponding to the third isolation opening 243.

[0226] In some optional embodiments, the display panel 10 includes a display area and a non-display area. For example, the non-display area may be located on at least one side of the display area. The conductive layer 900 also includes conductive portions located in the non-display area. For example, the conductive portions are used for electrical connection with other signal lines, including power supply voltage signal lines, data voltage signal lines, etc., or the conductive portions serve as pins for electrical connection with flexible circuit boards or integrated circuits. The orthographic projection of the conductive portions onto the substrate 100 is located within the orthographic projection of the first barrier layer 710 onto the substrate 100.

[0227] In these optional embodiments, the second barrier layer 720 can cover the area where the conductive part is located, thereby protecting the conductive part and avoiding the problem of etching damage to the conductive part by the wet etching solution during subsequent wet etching, such as the problem of corroding the side etching position of the conductive part, and ensuring the structural integrity of the conductive part.

[0228] Optionally, the orthographic projection of the conductive part on the substrate 100 is located within the orthographic projection of the fourth barrier layer 740 on the substrate 100. The fourth barrier layer 740 can cover the area where the conductive part is located, thereby protecting the conductive part and avoiding the problem of etching damage to the conductive part by the wet etching solution during subsequent wet etching, such as the problem of eroding the side etching position of the conductive part, and ensuring the structural integrity of the conductive part.

[0229] Optionally, the orthographic projection of the conductive part on the substrate 100 is located within the orthographic projection of the sixth barrier layer 760 on the substrate 100. The sixth barrier layer 760 can cover the area where the conductive part is located, thereby protecting the conductive part and avoiding the problem of etching damage to the conductive part by the wet etching solution during subsequent wet etching, such as the problem of corroding the side etching position of the conductive part, and ensuring the structural integrity of the conductive part.

[0230] Optionally, the first barrier layer 710 includes photoresist. Optionally, the second barrier layer 720 includes photoresist. Optionally, the third barrier layer 730 includes photoresist. Optionally, the fourth barrier layer 740 includes photoresist. Optionally, the fifth barrier layer 750 includes photoresist. Optionally, the sixth barrier layer 760 includes photoresist.

[0231] Optionally, the pixel defining portion 510 may be made of inorganic materials, such as SiO or SiN. The pixel defining portion 510 made of inorganic materials has good barrier properties against water and oxygen, which can reduce the intrusion of water and oxygen into the first electrode 410 and improve the reliability of the first electrode 410.

[0232] In some optional embodiments, the insulating material layer 201 includes a first film layer 210 and a second film layer 220 located on the side of the first film layer 210 facing away from the substrate 100; a first groove 202 penetrates the second film layer 220, and the depth of the first groove 202 penetrating the first film layer 210 is less than or equal to the thickness of the first film layer 210. For example, the thickness of the second film layer 220 is less than the thickness of the first film layer 210.

[0233] In some alternative embodiments, the depth of the first isolation opening 241 in the first film layer 210 is greater than or equal to the depth of the first groove 202 in the first film layer 210; and / or, the cross-section of the first isolation opening 241 in the first film layer 210 parallel to the substrate 100 is greater than the cross-section of the first groove 202 in the first film layer 210 parallel to the substrate 100; and / or, the cross-section of the first isolation opening 241 in the first film layer 210 perpendicular to the substrate 100 is greater than the cross-section of the first groove 202 in the first film layer 210 perpendicular to the substrate 100.

[0234] In these optional embodiments, the first film layer 210 and the second film layer 220 are stacked to form the isolation material layer 201. Optionally, the first film layer 210 is recessed relative to the second film layer 220 in a direction away from the isolation opening 240. When the light-emitting layer 300 is fabricated, the light-emitting layer 300 has a large drop at the edge of the isolation material layer 201, and the first film layer 210 is recessed relative to the second film layer 220. The light-emitting layer 300 is difficult to connect at the edge of the isolation material layer 201, resulting in breakage. The breakage of the light-emitting layer 300 forms mutually disconnected light-emitting units 310. All embodiments of this application do not require the isolation material layer 201 to be an inverted trapezoidal structure or a two-layer structure; any structure that can achieve the isolation effect of the light-emitting layer 300 is acceptable. The first groove 202 penetrates the second film layer 220 and part of the first film layer 210. Part of the first film layer 210 can protect the pixel definition material layer within the first isolation opening 241, avoiding over-etching of the pixel definition material layer during the etching process, which would expose the first electrode 410 and cause etching damage. For example, the second membrane layer 220 is continuously disposed within the via.

[0235] Optionally, the first film layer 210 includes a conductive material, such as a non-metallic conductive material or a metallic conductive material, to achieve electrical connection between the isolation material layer 201 and the second electrode 610.

[0236] In some optional embodiments, the second film layer 220 includes a conductive material or an insulating material, wherein the insulating material may be at least one of silicon nitride or silicon oxide.

[0237] In these optional embodiments, the second film layer 220 includes a conductive material, such as a non-metallic conductive material or a metallic conductive material. When the second film layer 220 is a non-metallic conductive material or an insulating material, the second film layer 220 is difficult to etch during the wet etching process of the first film layer 210 with an etching solution, thereby making it easier for the first film layer 210 to be recessed relative to the second film layer 220.

[0238] In some alternative embodiments, the first film layer 210 and the second film layer 220 comprise metallic materials, and the materials of the first film layer 210 and the second film layer 220 are different.

[0239] In these optional embodiments, when both the first film layer 210 and the second film layer 220 are made of metallic materials, the first film layer 210 can be wet-etched using an etching solution. By adjusting the etching solution, the etching rate of the second film layer 220 can be made lower than that of the first film layer 210. For example, the corrosion resistance of the second film layer 220 can be greater than that of the first film layer 210. Because the etching rate of the first film layer 210 is higher, when wet etching is performed using an etching solution, even if the second film layer 220 is etched to some extent, the first film layer 210 is etched faster, thereby making the first film layer 210 recessed relative to the second film layer 220.

[0240] In some optional embodiments, the insulating material layer 201 further includes a third film layer 230 located on the side of the first film layer 210 facing the substrate 100, wherein the orthographic projection of the first film layer 210 onto the substrate 100 lies within the orthographic projection of the third film layer 230 onto the substrate 100.

[0241] In these optional embodiments, to obtain the recessed first film layer 210, the first film layer 210 has a faster etching rate than the second film layer 220 and the third film layer 230 during the etching process, thereby forming the recessed first film layer 210. Because the first film layer 210 has a faster etching rate, more etching waste is generated and can easily enter other locations on the display panel 10, causing adverse effects. After the third film layer 230 is provided, the first film layer 210 can adhere better to the third film layer 230, and the generated etching waste falls onto the third film layer 230, making it easy to clean. For example, the third film layer 230 can be continuously disposed within a via.

[0242] Optionally, the second film layer 220 is made of titanium (Ti) or molybdenum (Mo), the first film layer 210 is made of aluminum (Al), silver (Ag) or copper (Cu), and the third film layer 230 is made of titanium (Ti) or molybdenum (Mo). For example, the isolation material layer 201 is a Ti / Al / Ti (titanium / aluminum / titanium) or Ti / Al / Mo (titanium / aluminum / molybdenum) three-layer metal composite material.

[0243] Optionally, the isolation material layer 201 is patterned through the first opening 711 by dry etching process; the first groove 202 is patterned through the second opening 721 by wet etching process, the first groove 202 is formed by dry etching, and the first isolation opening 241 is formed by wet etching of the first groove 202.

[0244] Optionally, the isolation material layer 201 is patterned through the third opening 731 by dry etching process; the second groove 203 is patterned through the fourth opening 741 by wet etching process, the second groove 203 is formed by dry etching, and the second isolation opening 242 is formed by wet etching of the second groove 203.

[0245] Optionally, the isolation material layer 201 is patterned through the fifth opening 751 by dry etching process; the third groove 204 is patterned through the sixth opening 761 by wet etching process, the third groove 204 is formed by dry etching, and the third isolation opening 243 is formed by wet etching of the third groove 204.

[0246] A second aspect of this application provides a display panel 10, which includes: a substrate 100; a conductive layer 900 located on the substrate 100 and including an overlap portion 910; a planarization layer 800 located on the substrate 100 and including a via 810, with at least a portion of the overlap portion 910 exposed through the via 810; and an isolation structure 200 located on the side of the planarization layer 800 away from the substrate 100, the isolation structure 200 enclosing a plurality of isolation openings 240; the isolation structure 200 includes a first film layer 210 and a second film layer 220, the second film layer 220 being located on the side of the first film layer 210 away from the substrate 100, the second film layer 220 having a slot 223, the orthographic projection of the slot 223 onto the substrate 100 being within the orthographic projection of the via 810 onto the substrate 100.

[0247] Patents CN118251982A, 202410864269.8, PCT / CN2024 / 098407, PCT / CN2024 / 102783, PCT / CN2024 / 098217, PCT / CN2024 / 099419, and PCT / CN2024 / 099072 describe the relevant content of the isolation structure 200 (or partition structure or isolation column), for reference.

[0248] The display panel 10 of this embodiment can be prepared by the preparation method of the display panel 10 in the above embodiment.

[0249] Please see Figure 19 , Figure 19 This is a partial cross-sectional view of a display panel provided in an embodiment of this application.

[0250] like Figure 19 As shown, the display panel 10 according to an embodiment of this application includes a substrate 100, a conductive layer 900, a planarization layer 800, and an isolation structure 200. A via 810 is formed on the planarization layer 800. The first electrode 410 of the first electrode layer 400 is electrically connected to the overlap portion 910 of the underlying conductive layer 900 through the via 810 of the planarization layer 800, thereby providing an electrical signal to the first electrode 410. The isolation structure 200 is composed of a first film layer 210 and a second film layer 220. During the fabrication of the isolation structure 200, the second film layer 220 forms a groove 223 in the area where the via 810 is located. The second film layer 220 protects the first film layer 210 during fabrication, preventing etching of the first film layer 210 and ensuring the structural continuity of the first film layer 210. The isolation structure 200 can isolate the light-emitting layer 300 to form mutually disconnected light-emitting units 310, thereby reducing the development and use of precision photomasks and lowering fabrication costs. For example, the film thickness of the isolation structure 200 inside the via 810 is less than at least a portion of the film thickness of the isolation structure 200 outside the via 810. For example, the isolation structure 200 is recessed within the via 810 to form a recessed portion.

[0251] There are several other ways to configure the substrate 100. For example, the substrate 100 may include a substrate and an array substrate disposed on the substrate. Alternatively, the substrate 100 may be the substrate itself. Or, the substrate 100 may include a buffer layer and a support plate on the side facing away from the substrate. Figure 19As shown, optionally, the display panel 10 further includes a pixel definition layer 500. The pixel definition layer 500 includes a pixel defining portion 510 and a pixel opening 520 formed by the pixel defining portion 510, used to define the light-emitting area of ​​the display panel 10. The pixel opening 520 is connected to the isolation opening 240 to reduce the occlusion of the pixel opening 520 by the isolation structure 200 and ensure the light-emitting effect of the display panel 10. Optionally, the isolation structure 200 is located on the side of the pixel defining portion 510 facing away from the substrate 100.

[0252] like Figure 19 As shown, in some optional embodiments, the isolation structure 200 includes a first film layer 210 and a second film layer 220 located on the side of the first film layer 210 facing away from the substrate 100.

[0253] In these optional embodiments, the first film layer 210 and the second film layer 220 are stacked to form the isolation structure 200. Optionally, the first film layer 210 is recessed relative to the second film layer 220 in a direction away from the isolation opening 240. When the light-emitting layer 300 is fabricated, the light-emitting layer 300 has a large drop at the edge of the isolation structure 200, and the first film layer 210 is recessed relative to the second film layer 220. The light-emitting layer 300 is difficult to connect at the edge of the isolation structure 200, resulting in breakage. The breakage of the light-emitting layer 300 forms mutually disconnected light-emitting units 310. All embodiments of this application do not require the isolation structure 200 to be an inverted trapezoidal structure or a two-layer structure; any structure that can achieve the isolation effect of the light-emitting layer 300 is acceptable. For example, the thickness of the second film layer 220 is less than the thickness of the first film layer 210.

[0254] For example, the thickness of the first film layer 210 inside the via 810 is less than at least a portion of the thickness of the first film layer 210 outside the via 810. For example, the thickness of the second film layer 220 inside the via 810 is less than at least a portion of the thickness of the second film layer 220 outside the via 810.

[0255] Please see Figure 19 and Figure 20 , Figure 20 yes Figure 19 A magnified view of a portion of the image.

[0256] like Figure 19 and Figure 20 As shown, in some optional embodiments, the first film layer 210 includes a first portion 211 and a second portion 212, the first portion 211 being exposed by a slot 223, and the second portion 212 being projected onto the substrate 100 within the projected image of the second film layer 220 onto the substrate 100. For example, the thickness of the first portion 211 is less than the thickness of the second portion 212.

[0257] In these optional embodiments, during the etching process, the second film layer 220 is etched to form a groove 223, and the first film layer 210 is exposed through the groove 223 and etched to a certain extent, such that the thickness of the first portion 211 of the first film layer 210 is less than the thickness of the second portion 212. However, the structures of the first portion 211 and the second portion 212 of the first film layer 210 are continuous, so that the first film layer 210 covers the portion of the pixel definition material layer located within the via 810, forming protection for the pixel definition material layer and preventing the pixel definition material layer from being over-etched, which would expose the first electrode 410 and cause etching damage. For example, the first film layer 210 may be continuously disposed within the via 810 or without any gaps. For example, the first electrode 410 may be continuously disposed within the via 810 or without any gaps.

[0258] Optionally, the display panel 10 further includes: a first electrode layer 400 located between the planarization layer 800 and the isolation structure 200. The first electrode layer 400 includes a plurality of mutually spaced first electrodes 410. The orthographic projection of the isolation opening 240 on the substrate 100 overlaps with the orthographic projection of the corresponding first electrode 410 on the substrate 100. The orthographic projection of the via 810 on the substrate 100 overlaps with the orthographic projection of the first electrode 410 on the substrate 100. The first electrode 410 and the overlapping portion 910 are electrically connected through the via 810. The first electrode 410 of the first electrode layer 400 is electrically connected to the overlapping portion 910 of the lower conductive layer 900 through the via 810 of the planarization layer 800, thereby providing an electrical signal to the first electrode 410.

[0259] Optionally, the display panel 10 further includes a pixel defining layer 500 located between the first electrode layer 400 and the isolation structure 200. The pixel defining layer 500 includes a pixel defining portion 510 and a pixel opening 520 formed by the pixel defining portion 510, and the pixel opening 520 communicates with the isolation opening 240. Optionally, the isolation structure 200 is located on the side of the pixel defining portion 510 facing away from the substrate 100, or the pixel defining layer 500 is provided with a clearance opening, and the isolation structure 200 is located in the clearance opening.

[0260] For example, pixel definition layer 500 includes inorganic insulating material; and / or planarization layer 800 includes organic insulating material.

[0261] Optionally, the pixel defining portion 510 is continuously disposed within the via 810. The pixel defining portion 510 is protected by the first film layer 210 to avoid the pixel defining material layer being over-etched, which would expose the first electrode 410 and cause it to be etched and damaged.

[0262] like Figure 19 and Figure 20As shown, in some optional embodiments, the pixel defining portion 510 includes a first sub-portion 511 and a second sub-portion 512. The orthographic projection of the first sub-portion 511 onto the substrate 100 is located within the orthographic projection of the via 810 onto the substrate 100, and the orthographic projection of the second sub-portion 512 onto the substrate 100 is located outside the orthographic projection of the via 810 onto the substrate 100. The thickness (i.e., film thickness) of the first sub-portion 511 is less than the thickness of the second sub-portion 512.

[0263] In these alternative embodiments, the first sub-part 511 of the pixel defining part 510 is disposed in the via 810. Since the via 810 has a slope, the first sub-part 511 has a smaller thickness when the film is formed, so that the thickness of the first sub-part 511 is less than the thickness of the second sub-part 512. However, the first sub-part 511 and the second sub-part 512 are structurally continuous, avoiding the problem of the first electrode 410 being exposed and damaged by etching.

[0264] Optionally, the second film layer 220 includes a first portion 221 and a second portion 222. The orthographic projections of the first portion 221 and the second portion 222 onto the substrate 100 are outside the orthographic projection of the via 810 onto the substrate 100. The thickness of the first portion 221 is greater than the thickness of the second portion 222. Optionally, the second portion 222 is located on the side of the first portion 221 away from the via 810, and the second portion 222 is located on the side of the first portion 221 closer to the isolation opening 240. The thickness of the second portion 222 is reduced due to etching during the formation of the isolation opening 240, making the thickness of the second portion 222 less than the thickness of the first portion 221.

[0265] Optionally, the distance between the surface of the first part 221 facing away from the substrate 100 and the substrate 100 is a first distance D1, and the distance between the surface of the second part 222 facing away from the substrate 100 and the substrate 100 is a second distance D2. The first distance D1 is greater than the second distance D2, that is, the second part 222 is etched during the preparation process.

[0266] The first part 221 is covered by the second barrier layer 720, the fourth barrier layer 740 or the sixth barrier layer 760, and the second part 222 is exposed from the second opening 721, the fourth opening 741 or the sixth opening 761. The second part 222 is not covered by the second barrier layer 720, the fourth barrier layer 740 or the sixth barrier layer 760, so the first part 221 will not be etched, and the second part 222 may be partially etched. The film thickness of the first part 221 is greater than the film thickness of the second part 222. There is a height difference between the surface of the first part 221 facing away from the substrate 100 and the surface of the second part 222 facing away from the substrate 100 in the thickness direction Z of the substrate 100.

[0267] Optionally, the first film layer 210 includes a conductive material, such as a non-metallic conductive material or a metallic conductive material, to achieve an electrical connection between the isolation structure 200 and the second electrode 610.

[0268] In some optional embodiments, the second film layer 220 includes a conductive material or an insulating material, wherein the insulating material may be at least one of silicon nitride or silicon oxide.

[0269] In these optional embodiments, the second film layer 220 includes a conductive material, such as a non-metallic conductive material or a metallic conductive material. When the second film layer 220 is a non-metallic conductive material or an insulating material, the second film layer 220 is difficult to etch during the wet etching process of the first film layer 210 with an etching solution, thereby making it easier for the first film layer 210 to be recessed relative to the second film layer 220.

[0270] In some alternative embodiments, the first film layer 210 and the second film layer 220 comprise metallic materials, and the materials of the first film layer 210 and the second film layer 220 are different.

[0271] In these optional embodiments, when both the first film layer 210 and the second film layer 220 are made of metallic materials, the first film layer 210 can be wet-etched using an etching solution. By adjusting the etching solution, the etching rate of the second film layer 220 can be made lower than that of the first film layer 210. Since the etching rate of the first film layer 210 is relatively high, when wet etching is performed using an etching solution, even if the second film layer 220 is etched to some extent, the first film layer 210 is etched faster, thereby making the first film layer 210 recessed relative to the second film layer 220.

[0272] like Figure 12 As shown, in some optional embodiments, the isolation structure 200 further includes a third film layer 230 located on the side of the first film layer 210 facing the substrate 100, wherein the orthographic projection of the first film layer 210 onto the substrate 100 lies within the orthographic projection of the third film layer 230 onto the substrate 100. For example, the third film layer 230 may be continuously disposed within the via 810 or may be without any gaps.

[0273] In some optional embodiments, the size of the isolation opening 240 in the cross-section 100 parallel to the substrate of the first film layer 210 is larger than the size of the isolation opening 240 in the cross-section parallel to the substrate 100 of the second film layer 220. In these optional embodiments, in order to obtain the recessed first film layer 210, the first film layer 210 has a faster etching rate than the second film layer 220 and the third film layer 230 during the etching process, thereby forming the recessed first film layer 210. Because the etching rate of the first film layer 210 is faster, more etching waste is generated and can easily enter other locations of the display panel 10, thus causing adverse effects. After the third film layer 230 is provided, the first film layer 210 can adhere better to the third film layer 230, and the generated etching waste falls on the third film layer 230, which is easy to clean. For example, the film thickness of the third film layer 230 inside the via 810 is less than at least a portion of the film thickness of the third film layer 230 outside the via 810.

[0274] Optionally, the second film layer 220 is made of titanium (Ti) or molybdenum (Mo), the first film layer 210 is made of aluminum (Al), silver (Ag) or copper (Cu), and the third film layer 230 is made of titanium (Ti) or molybdenum (Mo). For example, the isolation structure 200 is a Ti / Al / Ti (titanium / aluminum / titanium) or Ti / Al / Mo (titanium / aluminum / molybdenum) three-layer metal composite material.

[0275] like Figure 12 As shown, optionally, the display panel 10 further includes a light-emitting layer 300 and a second electrode layer 600. The light-emitting layer 300 is located on one side of the substrate 100 and includes light-emitting units 310 located in the pixel opening 520. The light-emitting units 310 are used to realize the light-emitting display of the display panel 10. The second electrode layer 600 is located on the side of the light-emitting layer 300 away from the substrate 100. The second electrode layer 600 includes second electrodes 610 spaced apart and located in the pixel opening 520. When an isolation structure 200 is present, the second electrodes 610 and the isolation structure 200 are electrically connected, and the second electrodes 610 are electrically connected to each other through the isolation structure 200 to form a full-surface electrode.

[0276] Optionally, at least the first electrode 410 is exposed through the pixel opening 520 to serve as an electrode of the light-emitting unit 310, thereby ensuring the light emission of the light-emitting unit 310. One of the first electrode 410 and the second electrode 610 serves as the anode of the light-emitting unit 310, and the other serves as the cathode of the light-emitting unit 310. This application embodiment illustrates this by using the first electrode 410 as the anode of the light-emitting unit 310 and the second electrode 610 as the cathode of the light-emitting unit 310.

[0277] Optionally, the material of the second electrode 610 may include MgAg alloy or ITO, etc. MgAg alloy or ITO and other materials have high transmittance, so that the light emitted by the light-emitting unit 310 can pass through the second electrode 610, thereby improving the light-emitting effect of the display panel 10.

[0278] In some optional embodiments, the orthographic projection of the light-emitting unit 310 onto the substrate 100 is located within the orthographic projection of the second electrode 610 onto the substrate 100, that is, the second electrode 610 is disposed covering the light-emitting unit 310 to serve as the electrode of the light-emitting unit 310, thereby ensuring the normal light emission of the light-emitting unit 310 and improving the display effect of the display panel 10.

[0279] Optionally, the light-emitting unit 310 and the isolation structure 200 are spaced apart, meaning that the light-emitting unit 310 and the isolation structure 200 are spaced apart with a certain distance, and the space between the light-emitting unit 310 and the isolation structure 200 is filled with a second electrode 610 to avoid direct contact between the light-emitting unit 310 and the isolation structure 200. In addition, each light-emitting unit 310 is spaced apart from each other to reduce crosstalk of charge carriers between each light-emitting unit 310 and improve the color crosstalk problem of the light-emitting unit 310.

[0280] Optionally, the planarization layer 800 may include an organic insulating material. Organic insulating materials have better flow properties and planarization effect, and can also prevent other film layers from contacting the conductive layer 900 and short-circuiting.

[0281] Optionally, the display panel 10 further includes a light-emitting device, at least a portion of which is located in a corresponding isolation opening 240. The light-emitting device includes a first electrode 410, a light-emitting unit 310, and a second electrode 610 sequentially stacked along a direction away from the substrate 100. The first electrode 410 is electrically connected to the overlapping portion 910 through a through-hole 810. The light-emitting unit 310 may include at least one of a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit. The isolation opening 240 may include at least one of a first isolation opening, a second isolation opening, and a third isolation opening.

[0282] Optionally, the display panel 10 may further include a driving circuit layer located between the substrate 100 and the planarization layer 800. The driving circuit layer includes pixel circuits, which are electrically connected to the overlap portion 910. Alternatively, the pixel circuits may include the overlap portion 910.

[0283] Please see Figure 21 , Figure 21 This is a partial cross-sectional view of a display panel provided in another embodiment.

[0284] like Figure 21As shown, optionally, the display panel 10 further includes: a first encapsulation layer 920 located on the side of the second electrode layer 600 facing away from the substrate 100. The first encapsulation layer 920 includes a plurality of encapsulation portions 921, at least a portion of which is located within the isolation opening 240, thereby encapsulating the second electrode 610 and the light-emitting unit 310. The plurality of encapsulation portions 921 may be spaced apart. The second electrode may include at least one of a first sub-electrode, a second sub-electrode, and a third sub-electrode. The encapsulation portions 921 may include at least one of a first encapsulation portion, a second encapsulation portion, and a third encapsulation portion.

[0285] Optionally, the orthographic projection of the encapsulation portion 921 onto the substrate 100 may be located outside the orthographic projection of the via 810 onto the substrate 100. For example, the orthographic projection of the encapsulation portion 921 onto the substrate 100 may be misaligned with the orthographic projection of the via 810 onto the substrate 100. The encapsulation portion 921 may not cover the via 810. Instead, a first barrier layer, a second barrier layer, a third barrier layer, a fourth barrier layer, a fifth barrier layer, and a sixth barrier layer are used as protective layers to cover the isolation material layer at the via 810. This prevents the wet etching solution from damaging the first electrode 410 within the via 810 during the fabrication of the isolation opening 240, ensuring the structural integrity of the first electrode 410 within the via 810. This provides a stable electrical signal to the first electrode 410, improves the dark spot problem of the display panel 10, and thus enhances the display reliability and performance of the display panel 10. For example, the encapsulation portion 921 may extend through the isolation structure 200 toward the sidewall of the isolation opening 240 to the side of the isolation structure 200 away from the substrate 100.

[0286] In some alternative embodiments, the material of the first encapsulation layer 920 includes inorganic materials, for example, the first encapsulation layer 920 is an inorganic layer.

[0287] In these alternative embodiments, the first encapsulation layer 920 comprises an inorganic material, which has good density and good barrier properties against water vapor and oxygen.

[0288] like Figure 21 As shown, optionally, the display panel 10 further includes: a second encapsulation layer 930 located on the side of the first encapsulation layer 920 facing away from the substrate 100; and a third encapsulation layer 940 located on the side of the second encapsulation layer 930 facing away from the substrate 100. The display panel 10 employs a three-layer encapsulation, which has better encapsulation performance and reduces the possibility of water and oxygen intrusion.

[0289] Optionally, the material of the second encapsulation layer 930 may include organic materials, for example, the second encapsulation layer 930 may be an organic layer.

[0290] Optionally, the material of the third encapsulation layer 940 may include inorganic materials, for example, the third encapsulation layer 940 may be an inorganic layer. The first encapsulation layer 920, the second encapsulation layer 930 and the third encapsulation layer 940 are encapsulated using inorganic materials, organic materials and inorganic materials respectively, forming a TFE (Thin Film Encapsulation) thin film encapsulation structure, which further improves the encapsulation performance.

[0291] Optionally, the light-emitting layer 300 includes an electron injection layer (EIL), an electron transport layer (ETL), a light-emitting material layer, a hole injection layer (HIL), and a hole transport layer (HTL).

[0292] Optionally, the display panel further includes a protective portion located on the side of the isolation structure away from the substrate, wherein the orthographic projection of the protective portion onto the substrate overlaps with the orthographic projection of the via onto the substrate. This is equivalent to retaining at least a portion of at least one of the second barrier layer 720, the fourth barrier layer 740, and the sixth barrier layer 760 as a protective portion, without completely peeling it off.

[0293] Optionally, the projection of the protective part onto the substrate is located outside the projection of the packaging part onto the substrate.

[0294] Optionally, the protective element is located between the second encapsulation layer and the isolation structure.

[0295] The structural design in this embodiment can be applied to other display panels 10. The specific choice can be made according to the actual situation, and this application does not impose any specific limitations on it. The display panel 10 provided in this application also includes a touch structure, a polarizer, and a cover plate, etc., which are stacked sequentially on the side of the second electrode layer 600 away from the substrate 100.

[0296] An embodiment of the third aspect of this application also provides a display device, including a display panel prepared according to any embodiment of the first aspect or a display panel 10 according to any embodiment of the second aspect. Since the display device provided by the embodiment of the third aspect of this application includes a display panel prepared according to any embodiment of the first aspect or a display panel 10 according to any embodiment of the second aspect, the display device provided by the embodiment of the third aspect of this application has the beneficial effects of the display panel prepared according to any embodiment of the first aspect or the display panel 10 according to any embodiment of the second aspect, which will not be elaborated further here.

[0297] The display devices in this application include, but are not limited to, mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, control consoles, and other devices with display functions.

[0298] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0299] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

[0300] The embodiments described above are not exhaustive, nor do they limit the invention to the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to effectively utilize this application and its modifications. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A method for manufacturing a display panel, characterized in that, The method includes: An isolation material layer is prepared on a substrate; A first barrier layer with a first opening is prepared on the side of the isolation material layer away from the substrate, and the isolation material layer is patterned through the first opening to obtain an isolation material layer with a first groove. A second barrier layer is prepared on the side of the insulating material layer having a first groove away from the substrate. The second barrier layer has a second opening, and the orthographic projection of the first groove on the substrate overlaps with the orthographic projection of the second opening on the substrate. The first groove is patterned through the second opening to form an isolation material layer with a first isolation opening.

2. The preparation method according to claim 1, characterized in that, Prior to the step of fabricating an insulating material layer on the substrate, the method further includes: A conductive layer and a planarization layer are sequentially formed on the substrate. The conductive layer includes an overlap portion, and the planarization layer includes a via. At least a portion of the overlap portion is exposed through the via. A first electrode layer is formed on the side of the planarization layer opposite to the substrate. The first electrode layer includes a plurality of first electrodes spaced apart from each other. The first electrodes are electrically connected to the overlapping portion through the vias. At least a portion of the vias are located within the orthographic projection of the second barrier layer on the substrate. The first isolation opening exposes the portion of the corresponding first electrode. The orthographic projection of the first isolation opening on the substrate is located outside the orthographic projection of the vias on the substrate. Preferably, the insulating material layer with the first groove is recessed in the via to form a first recess, and at least a portion of the first recess is located within the orthographic projection of the second barrier layer on the substrate.

3. The preparation method according to claim 2, characterized in that, After the step of forming the insulating material layer having the first insulating opening, the method further includes: The first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer are prepared sequentially. The first light-emitting material layer, the first electrode material layer and the first encapsulation material layer are patterned to form a first light-emitting unit, a first sub-electrode and a first encapsulation portion located on the side of the first sub-electrode away from the substrate, corresponding to the first isolation opening; Preferably, the orthographic projection of the first package portion onto the substrate is located outside the orthographic projection of the via onto the substrate; Preferably, after the step of forming the isolation material layer with the first isolation opening and before the steps of sequentially preparing the first light-emitting material layer, the first electrode material layer, and the first encapsulation material layer, the method further includes: The second barrier layer is peeled off.

4. The preparation method according to claim 1, characterized in that, The surface of the insulating material layer facing away from the substrate is recessed towards the substrate to form a first recess, and at least a portion of the first recess is located within the orthogonal projection of the second barrier layer onto the substrate. Preferably, at least a portion of the second barrier layer fills the first recess; Preferably, the thickness of the insulating material layer in the first recess is less than the thickness of the insulating material layer outside the first recess in at least a portion thereof; Preferably, the size of the first groove is smaller than the size of the first isolation opening; Preferably, the orthographic projection of the first groove onto the substrate is located within the orthographic projection of the second opening onto the substrate; Preferably, the second opening is spaced apart from the first groove at the same angle as ... first groove. Preferably, the distance between the outer contour of the second opening projected onto the substrate and the outer contour of the first groove projected onto the substrate is greater than or equal to 3 micrometers. Preferably, the first groove is a blind groove or a through groove; Preferably, prior to the step of preparing the insulating material layer on the substrate, the method further includes: A planarization layer is prepared on the substrate, the planarization layer including vias; an isolation material layer is recessed in the vias to form a first recess; at least a portion of the vias are located within the orthographic projection of the second barrier layer on the substrate; a first isolation opening exposes a portion of the corresponding first electrode, and the orthographic projection of the first isolation opening on the substrate is located outside the orthographic projection of the vias on the substrate. Preferably, the thickness of the insulating material layer inside the via is less than the thickness of at least a portion of the insulating material layer outside the via.

5. The preparation method according to claim 3, characterized in that, After the steps of forming a first light-emitting unit, a first sub-electrode, and a first encapsulation portion located on the side of the first sub-electrode away from the substrate corresponding to the first isolation opening, the method further includes: The isolation material layer with the first isolation opening is patterned to obtain an isolation material layer with the first isolation opening and the second isolation opening, wherein the first isolation opening and the second isolation opening are spaced apart in the orthographic projection of the substrate.

6. The preparation method according to claim 5, characterized in that, After obtaining the insulating material layer having the first insulating opening and the second insulating opening, the method further includes: The second light-emitting material layer, the second electrode material layer, and the second encapsulation material layer are prepared sequentially. The second light-emitting material layer, the second electrode material layer, and the second encapsulation material layer are patterned to form a second light-emitting unit, a second sub-electrode, and a second encapsulation portion located on the side of the second sub-electrode away from the substrate, corresponding to the second isolation opening. Preferably, the orthographic projection of the second encapsulation portion onto the substrate is located outside the orthographic projection of the via onto the substrate; Preferably, the first light-emitting unit and the second light-emitting unit emit different colors.

7. The preparation method according to any one of claims 5 or 6, characterized in that, In the step of patterning the insulating material layer having the first insulating opening, the method further includes: A third barrier layer with a third opening is prepared on the side of the isolation material layer with the first isolation opening away from the substrate, and the isolation material layer with the first isolation opening is patterned through the third opening to obtain an isolation material layer with the first isolation opening and a second groove, wherein the second groove is spaced apart from the first isolation opening in the orthogonal projection on the substrate. A fourth barrier layer is prepared on the side of the isolation material layer having the first isolation opening and the second groove away from the substrate. The fourth barrier layer has a fourth opening, and the orthographic projection of the second groove on the substrate is located within the orthographic projection of the fourth opening on the substrate. The second groove is patterned through the fourth opening to form an isolation material layer having the first isolation opening and the second isolation opening; Preferably, the size of the second groove is smaller than the size of the second isolation opening; Preferably, after the step of forming the isolation material layer with the second isolation opening and before the steps of sequentially preparing the second light-emitting material layer, the second electrode material layer, and the second encapsulation material layer, the method further includes: The fourth barrier layer is peeled off.

8. The preparation method according to claim 7, characterized in that, At least a portion of the vias are projected onto the substrate in a direction within the projection of the fourth barrier layer onto the substrate. Preferably, the insulating material layer with the second groove is recessed in the via to form a second recess, and at least a portion of the second recess is located within the orthographic projection of the fourth barrier layer on the substrate. Preferably, the fourth opening is disposed at a distance from the frontal projection edge of the substrate to the second groove at the frontal projection edge of the substrate; Preferably, the distance between the outer contour of the fourth opening projected onto the substrate and the outer contour of the second groove projected onto the substrate is greater than or equal to 3 micrometers. Preferably, the second groove is a blind groove or a through groove; Preferably, after obtaining the insulating material layer having the first insulating opening and the second groove, and before preparing the fourth barrier layer on the side of the insulating material layer having the first insulating opening and the second groove facing away from the substrate, the method further includes: The third barrier layer is peeled off.

9. The preparation method according to claim 2, characterized in that, Before the step of preparing a first barrier layer with a first opening on the side of the insulating material layer facing away from the substrate, the method further includes: The insulating material layer is patterned to obtain an insulating material layer with a third insulating opening; Preferably, the first isolation opening and the third isolation opening are spaced apart in the orthographic projection of the substrate.

10. The preparation method according to claim 9, characterized in that, After obtaining the insulating material layer with the third isolation opening, and before the step of preparing a first barrier layer with the first opening on the side of the insulating material layer facing away from the substrate, the method further includes: The third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer are prepared sequentially. The third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer are patterned to form a third light-emitting unit, a third sub-electrode, and a third encapsulation portion located on the side of the third sub-electrode away from the substrate, corresponding to the third isolation opening. Preferably, the orthographic projection of the third encapsulation portion onto the substrate is located outside the orthographic projection of the via onto the substrate.

11. The preparation method according to any one of claims 9 or 10, characterized in that, In the step of patterning the insulating material layer to obtain an insulating material layer with a third insulating opening, the method further includes: A fifth barrier layer with a fifth opening is prepared on the side of the isolation material layer opposite to the substrate, and the isolation material layer is patterned through the fifth opening to obtain an isolation material layer with a third groove. The third groove is patterned to form an isolation material layer with a third isolation opening; Preferably, the size of the third groove is smaller than the size of the third isolation opening.

12. The preparation method according to claim 11, characterized in that, Before the step of patterning the third groove, the method further includes: A sixth barrier layer is prepared on the side of the insulating material layer having a third groove away from the substrate. The sixth barrier layer has a sixth opening, and the orthographic projection of the third groove onto the substrate is located within the orthographic projection of the sixth opening onto the substrate. Preferably, at least a portion of the vias are projected onto the substrate in the orthographic projection of the sixth barrier layer onto the substrate; Preferably, the insulating material layer with the third groove is recessed in the via to form a third recess, and at least a portion of the third recess is located within the orthographic projection of the sixth barrier layer on the substrate. Preferably, the sixth opening and the third groove are spaced apart at the same point on the orthographic projection edge of the substrate. Preferably, the distance between the outer contour of the sixth opening projected onto the substrate and the outer contour of the third groove projected onto the substrate is greater than or equal to 3 micrometers. Preferably, the third groove is a blind groove or a through groove; Preferably, after the step of forming the isolation material layer with the third isolation opening and before the step of sequentially preparing the third light-emitting material layer, the third electrode material layer, and the third encapsulation material layer, the method further includes: The sixth barrier layer is peeled off; And / or, after the step of obtaining the insulating material layer with the third groove, and before the step of preparing the sixth barrier layer on the side of the insulating material layer with the third groove facing away from the substrate, the method further includes: The fifth barrier layer is peeled off.

13. The preparation method according to claim 1, characterized in that, The insulating material layer includes a first film layer and a second film layer, the second film layer is located on the side of the first film layer away from the substrate, the first groove penetrates the second film layer, and the depth of the first groove penetrating the first film layer is less than or equal to the thickness of the first film layer. Preferably, the depth of the first isolation opening in the first membrane layer is greater than or equal to the depth of the first groove in the first membrane layer; And / or, the cross-section of the first isolation opening in the first film layer parallel to the substrate is larger than the cross-section of the first groove in the first film layer parallel to the substrate; and / or, the cross-section of the first isolation opening in the first film layer perpendicular to the substrate is larger than the cross-section of the first groove in the first film layer perpendicular to the substrate. Preferably, the first film layer comprises a conductive material; Preferably, the second film layer comprises a conductive material or an insulating material; Preferably, both the first film layer and the second film layer comprise a metallic material, and the materials of the first film layer and the second film layer are different; Preferably, the corrosion resistance of the second film layer is greater than that of the first film layer; Preferably, the insulating material layer further includes a third film layer located on the side of the first film layer facing the substrate, wherein the orthographic projection of the first film layer on the substrate is located within the orthographic projection of the third film layer on the substrate; Preferably, the insulating material layer is patterned through the first opening using a dry engraving process; The first groove is patterned through the second opening using a wet etching process; Preferably, after obtaining the insulating material layer with the first groove and before forming a second barrier layer on the side of the insulating material layer with the first groove facing away from the substrate, the method further includes: The first barrier layer is peeled off.

14. A display panel, characterized in that, The display panel includes: substrate; A conductive layer is located on the substrate and includes an overlapping portion; A planarization layer is located on the substrate and includes vias, with at least a portion of the overlap exposed through the vias; An isolation structure is located on the side of the planarization layer opposite to the substrate, and the isolation structure encloses and forms a plurality of isolation openings; The isolation structure includes a first film layer and a second film layer, the second film layer being located on the side of the first film layer opposite to the substrate, the second film layer having a slot, the orthographic projection of the slot onto the substrate being within the orthographic projection of the via onto the substrate.

15. The display panel according to claim 14, characterized in that, The first film layer includes a first portion and a second portion. The first portion is exposed by the slot, and the second portion is located within the orthographic projection of the second film layer on the substrate. The thickness of the first portion is less than the thickness of the second portion. Preferably, the first film layer comprises a conductive material; Preferably, the second film layer comprises a conductive material or an insulating material; Preferably, both the first film layer and the second film layer comprise a metallic material, and the materials of the first film layer and the second film layer are different; Preferably, the size of the isolation opening in the first film layer parallel to the cross-section of the substrate is larger than the size of the isolation opening in the second film layer parallel to the cross-section of the substrate. Preferably, the isolation structure further includes a third film layer located on the side of the first film layer facing the substrate, wherein the orthographic projection of the first film layer on the substrate is located within the orthographic projection of the third film layer on the substrate; Preferably, the film thickness of the isolation structure within the via is less than the film thickness of at least a portion of the isolation structure outside the via.

16. The display panel according to claim 14, characterized in that, The display panel also includes: A first electrode layer is located between the planarization layer and the isolation structure. The first electrode layer includes a plurality of mutually spaced first electrodes. The orthographic projection of the isolation opening on the substrate overlaps with the orthographic projection of the corresponding first electrode on the substrate. The orthographic projection of the via on the substrate overlaps with the orthographic projection of the first electrode on the substrate. The first electrode and the overlapping portion are electrically connected through the via. A pixel definition layer is located between the first electrode layer and the isolation structure. The pixel definition layer includes a pixel defining portion and a pixel opening formed by the pixel defining portion. The pixel opening is connected to the isolation opening. Preferably, the isolation structure is located on the side of the pixel defining portion opposite to the substrate; Preferably, the pixel definition layer comprises an inorganic insulating material; and / or, the planarization layer comprises an organic insulating material.

17. The display panel according to claim 16, characterized in that, The pixel defining portion is continuously disposed within the via; Preferably, the pixel defining portion includes a first sub-portion and a second sub-portion, wherein the orthographic projection of the first sub-portion onto the substrate is located within the orthographic projection of the via onto the substrate, and the orthographic projection of the second sub-portion onto the substrate is located outside the orthographic projection of the via onto the substrate, and the thickness of the first sub-portion is less than the thickness of the second sub-portion.

18. The display panel according to claim 14, characterized in that, The second film layer includes a first part and a second part, wherein the first part and the second part are projected onto the substrate outside the projection of the via onto the substrate, and the thickness of the first part is greater than the thickness of the second part. Preferably, the second portion is located on the side of the first portion away from the via, and the second portion is located on the side of the first portion closer to the isolation opening; Preferably, the distance between the surface of the first portion facing away from the substrate and the substrate is a first distance, and the distance between the surface of the second portion facing away from the substrate and the substrate is a second distance, wherein the first distance is greater than the second distance.

19. The display panel according to claim 14, characterized in that, The display panel further includes a light-emitting device, at least a portion of which is located in the corresponding isolation opening. The light-emitting device includes a first electrode, a light-emitting unit, and a second electrode sequentially stacked along a direction away from the substrate. The first electrode is electrically connected to the overlapping portion through the via. Preferably, the second electrode is electrically connected to the isolation structure; Preferably, the isolation structure is recessed within the via to form a recessed portion; Preferably, the display panel further includes a driving circuit layer located between the substrate and the planarization layer, the driving circuit layer including pixel circuits, the pixel circuits being electrically connected to the overlapping portion, or the pixel circuits including the overlapping portion; Preferably, the display panel further includes: a first encapsulation layer located on the side of the second electrode facing away from the substrate, the first encapsulation layer including a plurality of encapsulation portions; Preferably, the orthographic projection of the package portion onto the substrate is located outside the orthographic projection of the via onto the substrate; Preferably, the encapsulation portion extends through the sidewall of the isolation structure toward the isolation opening to the side of the isolation structure away from the substrate; Preferably, the plurality of encapsulation portions are spaced apart, and / or the first encapsulation layer is an inorganic layer; Preferably, the display panel further includes: a second encapsulation layer located on the side of the first encapsulation layer away from the substrate; Preferably, the display panel further includes: a third encapsulation layer located on the side of the second encapsulation layer away from the substrate; Preferably, the second encapsulation layer is an organic layer, and / or the third encapsulation layer is an inorganic layer.

20. A display device, characterized in that, The display panel includes a display panel prepared by the method of any one of claims 1 to 13, or a display panel as described in any one of claims 14 to 19.

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