Conversion chamber and semiconductor process equipment

Abstract

The invention discloses a conversion chamber and semiconductor process equipment. The conversion chamber comprises a placing table used for placing a wafer; the gas transmission port is located at the bottom of the conversion cavity, and gas is fed into and exhausted from the cavity through the gas transmission port, so that conversion between the atmospheric environment and the vacuum environment is carried out; gas distribution holes are distributed in the gas distribution baffle, and the gas distribution baffle is located between the placement table and the gas transmission opening in the bottom and used for increasing gas flow resistance during gas inlet or gas exhaust. The air flow disturbance in the vacuum and atmospheric environment conversion process in the conversion chamber can be reduced, so that the dust raising effect of the particles is reduced, the pollution influence of the particles on the wafer can be reduced, and the subsequent device yield is improved.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor manufacturing, and more specifically to a conversion chamber and a semiconductor process apparatus. Background Technology

[0002] With breakthroughs in semiconductor chip manufacturing processes towards 7nm and below, the cleanliness requirements for the production environment have reached the nanometer level. Precision semiconductor process equipment is the carrier of core processes, and its production quality directly determines the device yield. Microparticle contamination is a key factor in improving product yield. Even particles only one-third the size of a process node can cause device failure.

[0003] Loadlocks are a critical component of semiconductor process equipment, serving as the transition point between atmospheric and vacuum environments for wafers. However, numerous factors can lead to particle generation during semiconductor manufacturing processes. For example, wafers themselves may carry tiny particles, and friction between the wafer and robotic arms can generate particles. Particles within the loadlock primarily originate from residues on the inner walls and are carried in during wafer transport. During the vacuum-to-atmosphere transition process, the airflow disturbances generated during intake and exhaust can cause particle migration and suspension within the loadlock, leading to their adhesion to the wafer surface and causing particle contamination. Furthermore, the greater the airflow disturbance, the higher the probability of wafer contamination. Current loadlock structures are relatively simple, resulting in significant airflow disturbances during vacuum-to-atmosphere transitions, easily stirring up deposited particles and exacerbating particle contamination.

[0004] To address the aforementioned problems in the prior art, there is an urgent need in the art for an improved conversion chamber that can reduce airflow disturbances during the vacuum and atmospheric environment conversion process within the conversion chamber, thereby reducing the dust effect of particles, which in turn can reduce the contamination impact of particles on the wafer and improve the yield of subsequent devices. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a conversion chamber and a semiconductor process apparatus that can reduce airflow disturbance during the vacuum and atmospheric environment conversion process within the conversion chamber, thereby reducing the dust effect of particles, which in turn reduces the contamination impact of particles on the wafer and improves the yield of subsequent devices.

[0007] Specifically, the conversion chamber provided according to the first aspect of the present invention includes: a placement stage for placing a wafer; a gas inlet located at the bottom of the conversion chamber for introducing and extracting gas into the chamber to convert between an atmospheric environment and a vacuum environment; and a gas distribution baffle with gas distribution holes distributed therein, the gas distribution baffle being located between the placement stage and the gas inlet at the bottom for increasing gas flow resistance during gas introduction or extraction.

[0008] Furthermore, in some embodiments of the present invention, the placement stage is disposed on the side wall of the cavity to form a plurality of inwardly extending inner bosses on the same plane, wherein the diameter of the inscribed circle corresponding to each inner boss is smaller than the diameter of the wafer.

[0009] Furthermore, in some embodiments of the present invention, the inner boss is an annular inner boss, and the inner ring diameter of the annular inner boss is smaller than the diameter of the wafer.

[0010] Furthermore, in some embodiments of the present invention, the air distribution hole is a truncated eccentric through hole, wherein the upper through hole and the lower through hole are eccentrically arranged, and their airflow channels have an overlapping area, so that the gas flows along the overlapping path.

[0011] Furthermore, in some embodiments of the present invention, the upper through hole and the lower through hole have the same diameter, and the diameter of the overlapping path is smaller than the diameter of the upper through hole or the lower through hole.

[0012] Furthermore, in some embodiments of the present invention, the diameter of the upper through hole is greater than the diameter of the lower through hole, and the diameter of the overlapping path is less than or equal to the diameter of the lower through hole.

[0013] Furthermore, in some embodiments of the present invention, the top of the upper through hole is a funnel-shaped structure that is wider at the top and narrower at the bottom, so as to guide the gas to flow smoothly along the inner wall of the funnel-shaped structure.

[0014] Furthermore, in some embodiments of the present invention, the conversion chamber further includes a sealing ring located on the outer edge of the air distribution baffle to seal the internal space of the chamber during the air intake and the air extraction.

[0015] Furthermore, in some embodiments of the present invention, the gas inlet includes an air inlet and an air extraction port. The air extraction port is connected to an air pump for evacuating the interior of the chamber after the wafer to be processed is fed into the chamber to form the vacuum environment. The air inlet is connected to an air intake source for introducing air into the chamber after the processed wafer is fed into the chamber to form the atmospheric environment.

[0016] Furthermore, the semiconductor process apparatus provided according to the second aspect of the present invention includes: a wafer transfer box for temporarily storing wafers; the conversion chamber provided in the first aspect of the present invention for converting the internal environment of the chamber into a vacuum environment after receiving a wafer to be processed, and converting the internal environment of the chamber into an atmospheric environment after receiving a processed wafer; a vacuum transfer chamber having a robotic arm inside for transferring the wafer between the conversion chamber and the reaction chamber; and a reaction chamber for performing process reactions on the wafer fed into it. Attached Figure Description

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A structural cross-sectional view of a conversion chamber provided according to some embodiments of the present invention is shown.

[0019] Figure 2A A structural diagram of a placement platform provided according to some embodiments of the present invention is shown.

[0020] Figure 2B A top view of the placement platform provided according to some embodiments of the present invention is shown.

[0021] Figure 3A A schematic diagram of the structure of the air distribution hole provided according to some embodiments of the present invention is shown.

[0022] Figure 3B A schematic diagram of the structure of the air distribution hole provided according to other embodiments of the present invention is shown.

[0023] Figure 4A A velocity cross-sectional trace diagram of the prior art during the air extraction process in the conversion chamber is shown.

[0024] Figure 4B A velocity cross-sectional trace diagram of the air extraction process in the conversion chamber provided by the present invention is shown.

[0025] Figure 5AThe diagram shows a velocity cross-sectional trace during the intake process in the conversion chamber of the prior art.

[0026] Figure 5B A velocity cross-sectional trace diagram of the air extraction process in the conversion chamber provided by the present invention is shown.

[0027] Figure label:

[0028] 100 conversion chambers;

[0029] 101 sidewalls;

[0030] 110 placement platform;

[0031] 111 Inner boss;

[0032] 112 inscribed circle;

[0033] 120 air intake;

[0034] 130 air extraction port;

[0035] 140-point air baffle;

[0036] 141 pores;

[0037] 150 sealing ring;

[0038] 200 wafers;

[0039] 300 eccentric through hole;

[0040] 310 upper section through hole;

[0041] 311 horn hole structure;

[0042] 320 lower section through hole;

[0043] 330 overlapping paths. Detailed Implementation

[0044] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0045] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0046] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0047] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0048] As mentioned above, many factors can lead to particle generation during semiconductor manufacturing processes. Particles within the conversion chamber primarily originate from residues on the inner walls and are carried in during wafer transport. During the vacuum and atmospheric environment transition within the conversion chamber, the airflow disturbances generated during these transitions can cause particle migration and suspension, leading to their adhesion to the wafer surface and causing particle contamination. Furthermore, the greater the airflow disturbance, the higher the probability of wafer contamination. Current conversion chamber structures are relatively simple; therefore, the airflow disturbances during vacuum and atmospheric environment transitions are significant, easily swirling up deposited particles and exacerbating particle contamination.

[0049] To address the aforementioned problems in the prior art, the present invention provides a conversion chamber and a semiconductor process apparatus that can reduce airflow disturbance during the vacuum and atmospheric environment conversion process within the conversion chamber, thereby reducing the dust effect of particles, which in turn reduces the contamination impact of particles on the wafer and improves the yield of subsequent devices.

[0050] In some non-limiting embodiments, the conversion chamber provided in the first aspect of the present invention can be configured in the semiconductor process equipment provided in the second aspect of the present invention.

[0051] The working principle of the above-described conversion chamber will be described below with reference to some embodiments of semiconductor process equipment. Those skilled in the art will understand that these embodiments of semiconductor process equipment are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating modes or functions of the conversion chamber. Similarly, the conversion chamber is also only one non-limiting implementation provided by the present invention and does not constitute a limitation on all operating modes or functions of these semiconductor process equipment.

[0052] Please refer to Figure 1 , Figure 1 A structural cross-sectional view of a conversion chamber provided according to some embodiments of the present invention is shown.

[0053] like Figure 1 As shown, in some embodiments of the present invention, the semiconductor process equipment may mainly include a wafer transfer box, a conversion chamber 100, a vacuum transfer chamber, and a reaction chamber.

[0054] Specifically, the wafer transfer box is a sealed cavity structure that isolates particulate contaminants such as dust and aerosols from the production line environment, temporarily storing wafers awaiting processing or already processed wafers. The interior of the wafer transfer box can be made of ultra-clean materials (such as polyetheretherketone (PEEK) or electrostatic dissipative polyphenylene ether (ESP)) to further prevent particle generation. Optionally, some wafer transfer boxes have a built-in nitrogen filling interface, allowing high-purity nitrogen to be introduced into the box to create an inert atmosphere, preventing wafer surface oxidation and inhibiting the deterioration of coatings such as photoresist. Furthermore, the box can have a moisture-proof and anti-static design to prevent electrostatic discharge from damaging the delicate circuit structures on the wafer surface.

[0055] The conversion chamber 100 is the next module after the wafer transfer box. Both ends of the conversion chamber 100 are wafer transfer channels. An observation window can be provided in the upper cover of the conversion chamber 100 for visual monitoring of the wafer transfer process within the chamber, thereby ensuring the safety, reliability, and process traceability of wafer transfer. After receiving the wafer to be processed from the wafer transfer box, the conversion chamber 100 converts the internal environment to a vacuum environment to facilitate communication with the subsequent vacuum environment of the reaction chamber. Conversely, after receiving the processed wafer from the reaction chamber, the conversion chamber 100 converts the internal environment to an atmospheric environment to facilitate communication with the preceding atmospheric environment of the wafer transfer box.

[0056] Between the conversion chamber 100 and the reaction chamber, a vacuum transfer chamber is provided, containing a robotic arm for transferring the wafer between the conversion and reaction chambers. The next module after the vacuum transfer chamber consists of several reaction chambers for performing process reactions on the wafers to be processed. These process reactions can employ various thin film fabrication processes, including but not limited to plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and metal-organic chemical vapor deposition (MOCVD), as well as etching processes such as dry etching and wet etching.

[0057] In this invention, by improving and optimizing the conversion chamber 100, airflow disturbance during the vacuum and atmospheric environment conversion process can be reduced, thereby reducing the dust effect of particles and thus reducing the contamination impact of particles on the wafer.

[0058] Specifically, such as Figure 1 As shown, in some embodiments of the present invention, the conversion chamber 100 may mainly include a placement platform 110, an air inlet, and an air distribution baffle 140.

[0059] exist Figure 1 In the illustrated embodiment, the placement stage 110 is used to place the wafer. A gas inlet is located at the bottom of the conversion chamber 100. Gas is introduced into and evacuated from the chamber via the gas inlet, thereby converting the atmospheric environment and vacuum environment within the chamber. Specifically, the gas inlet may include an inlet 120 and an evacuation port 130. The evacuation port 130 can be connected to a vacuum pump. After the wafer to be processed is fed into the conversion chamber 100, the chamber can be evacuated through the evacuation port 130 to create a vacuum environment. The inlet 120 can be connected to an air supply source. After the processed wafer is fed into the conversion chamber 100, the chamber can be filled with gas through the inlet 120 to create an atmospheric environment. By separating the chamber's air intake and evacuation into two separate ports, particles remaining in the evacuation line during the evacuation process can be prevented from being reintroduced into the conversion chamber 100 during the next air intake stage, thus avoiding wafer contamination.

[0060] Continue as Figure 1As shown, the gas distribution baffle 140 contains gas distribution holes 141. The gas distribution baffle 140 can be located between the placement platform 110 and the bottom air inlet 120 and air outlet 130 to increase gas flow resistance during air intake or exhaust. When air is introduced into the cavity through the air inlet 120, the densely packed gas distribution holes 141 on the gas distribution baffle 140 can break down a single concentrated jet into numerous parallel fine streams, thereby dispersing the kinetic energy of the intake airflow and preventing excessively high local flow velocities. When air is extracted from the cavity through the air outlet 130, the negative pressure of the air outlet 130 is evenly transmitted to the entire cavity cross-section through the densely packed gas distribution holes 141 on the gas distribution baffle 140, ensuring that the pressure gradient in each region of the cavity remains consistent. Furthermore, the solid portion of the gas distribution baffle 140 can block the vortex formed by the airflow near the air extraction port 130, forcing the airflow to flow orderly along the gas distribution hole 141 to the air extraction port 130, which helps to further improve the uniformity of the extraction process. Therefore, in this invention, the gas distribution baffle 140 can distribute the gas flow during air intake and extraction inside the conversion chamber 100 to reduce the gas flow velocity, thereby improving the uniformity of the airflow during air intake and extraction and helping to reduce airflow disturbance within the chamber.

[0061] Furthermore, please combine Figure 2A A shared understanding. Figure 2A A structural diagram of a placement platform provided according to some embodiments of the present invention is shown.

[0062] like Figure 1 and Figure 2A As shown, in some embodiments, the placement stage 110 can be disposed on the side wall 101 within the chamber, forming multiple inwardly extending inner bosses 111 on the same plane. The diameter of the inscribed circle 112 corresponding to each inner boss 111 can be smaller than the diameter of the wafer 200. The placement stage 110 can include at least three inner bosses 111 on the same plane. By placing the placement stage 110 carrying the wafer 200 close to the side wall 101, compared to the conventional tray-like support structure, the placement stage 110 in this embodiment does not occupy the main space in the center of the chamber. By reserving sufficient unobstructed space in the central area within the conversion chamber 100, local flow resistance can be eliminated during air intake and exhaust, reducing the probability of eddies and helping to construct a uniform pressure gradient field, thereby improving the efficiency of air intake and exhaust, as well as the uniformity of airflow.

[0063] Furthermore, in the above embodiments, by setting the gas distribution baffle 140 below the placement stage 110, it is also possible to prevent gas from blowing directly onto the front side of the wafer 200 when the conversion chamber 100 is filled with gas, thereby protecting the precision structure and process film layer on the front side of the wafer and reducing the damage to the front side of the wafer caused by the airflow impact force.

[0064] Alternatively, please see Figure 2B . Figure 2BA top view of the placement platform provided according to some embodiments of the present invention is shown.

[0065] like Figure 2B As shown, in some optional embodiments, the inner bosses 111 can be directly distributed in the sidewall 101 region within the cavity. Furthermore, the radial thickness of each inner boss 111 satisfies the condition that the diameter of the inscribed circle 112 corresponding to each inner boss 111 is smaller than the diameter of the wafer, thus stably supporting the wafer 200. Alternatively, the inner bosses 111 can also be annular inner bosses. The inner ring diameter of the annular inner boss is smaller than the diameter of the wafer 200, thus stably supporting the wafer 200.

[0066] In addition, such as Figure 2B As shown, in some embodiments, a sealing ring 150 is provided on the outer edge of the air distribution baffle 140. The sealing ring 150 can seal the internal space of the conversion chamber 100 during air intake and exhaust.

[0067] Next, please refer to Figure 3A . Figure 3A A schematic diagram of the structure of the air distribution hole provided according to some embodiments of the present invention is shown.

[0068] like Figure 3A As shown, in some embodiments, the air distribution hole 141 can be a truncated eccentric through hole 300. The upper through hole 310 and the lower through hole 320 are eccentrically arranged, and their airflow channels overlap, allowing gas to flow along the overlapping path 330 (the shaded area in Figure 3). Figure 3A As shown, the aperture of the overlapping path 330 is smaller than the aperture of the upper through hole 310 located at the upper end. Therefore, during the air intake process in the cavity, the narrower aperture of the overlapping path 330 can effectively prevent residual particles in the base plate area from flowing back during air intake and contaminating the wafer with the airflow, thereby causing particle contamination of the wafer.

[0069] Specifically, in Figure 3A In the illustrated embodiment, the diameters of the upper through hole 310 and the lower through hole 320 can be the same. The diameter of the overlapping path 330 can be smaller than the diameter of either the upper through hole 310 or the lower through hole 320.

[0070] Alternatively, such as Figure 3BAs shown, in some embodiments, the diameter of the upper through-hole 310 of the eccentric through-hole 300 can be larger than the diameter of the lower through-hole 320. The diameter of the overlapping path 330 can be less than or equal to the diameter of the lower through-hole 320. During the air intake stage, the external airflow will generate a certain velocity in the lower through-hole 320 with a small diameter due to the channel contraction. When the airflow enters the upper through-hole 310 with a large diameter, the channel cross-section suddenly expands, the kinetic energy of the airflow is converted into static pressure energy, the velocity decreases instantaneously, and the original high-speed jet is dispersed into a gentle planar airflow. The upper through-hole 310 with a large diameter is equivalent to a micro buffer cavity, which can disperse the local high pressure at the outlet of the air distribution hole 141 into a uniform low-pressure area. In this embodiment, the eccentric through-hole 300 with a stepped hole structure that is larger at the top and smaller at the bottom can avoid the airflow directly impacting the wafer in the cavity at high speed, reducing the damage caused by the airflow impact force to the wafer and its surface process film. During the evacuation phase, the large-diameter upper through-hole 310 increases the inlet area of ​​the evacuated gas, reducing the contraction resistance when the gas flows into the distribution port 141. Compared to a constant-diameter orifice, this eccentric through-hole 300 with its stepped structure (larger at the top and smaller at the bottom) allows the gas in the cavity to flow more smoothly into the evacuation port 130, thereby shortening the evacuation time and reducing equipment energy consumption.

[0071] In the above Figure 3A and Figure 3B In the illustrated embodiment, by setting a truncated eccentric through-hole 300 as a venting port 141, the backflow of residual particles in the bottom plate area during the air intake stage is blocked via the overlapping path 330 of the small aperture corresponding to the overlapping area of ​​the upper through-hole 310 and the lower through-hole 320, thereby reducing the risk of wafer particle contamination. In some other embodiments, those skilled in the art can also adopt other particle blocking methods based on the concept of the present invention, such as setting a filter structure in the venting port 141, to achieve the same technical effect of preventing bottom particle backflow.

[0072] Continue back Figure 3A As shown, in some preferred embodiments, the top of the upper through-hole 310 can be a funnel-shaped structure 311 that is wider at the top and narrower at the bottom, to guide the gas to flow smoothly along the inner wall of the funnel-shaped structure 311. During the evacuation phase in the conversion chamber 100, the funnel-shaped structure 311 can increase the contact area between the gas and the channel, making it easier for the gas in the chamber to flow into the gas distribution hole 141, avoiding airflow congestion caused by an excessively narrow inlet. The gradually narrowing opening will create a guiding and accelerating effect on the airflow. According to the Venturi effect in fluid mechanics, the airflow velocity increases in the contraction section, which can reduce the residence time of the gas in the chamber, thereby improving the overall evacuation efficiency and meeting the requirements of the vacuum-atmosphere conversion chamber 100 for rapid switching of the chamber atmosphere. In addition, the aforementioned funnel-shaped structure 311 can also guide the gas to flow smoothly along the inner wall of the channel, thereby avoiding the local vortex problem that is easily generated in right-angle or abrupt cross-section channels.

[0073] This concludes the basic description of the main structure of the conversion chamber 100 provided by the present invention.

[0074] Next, please refer to Figure 4A and Figure 4B .like Figure 4A and Figure 4B As shown, during the process of evacuating air from the conversion chamber, the uniformity of the airflow velocity in the internal flow field of the conversion chamber 100 is significantly improved after adding the air distribution baffle 140 of the present invention.

[0075] In addition, please see Figure 5A and Figure 5B .like Figure 5A and Figure 5B As shown, during the process of air intake and backfilling in the conversion chamber, the turbulence phenomenon in the internal flow field of the conversion chamber 100 was significantly improved after the addition of the air distribution baffle 140 in this invention.

[0076] In summary, the present invention provides a conversion chamber and a semiconductor process apparatus that can reduce airflow disturbance during the vacuum and atmospheric environment conversion process within the conversion chamber, thereby reducing the dust effect of particles, which in turn reduces the contamination impact of particles on wafers and improves the yield of subsequent devices.

[0077] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0078] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A conversion chamber, characterized in that, include: A placement stage, used to place wafers; An air inlet, located at the bottom of the conversion chamber, allows for the intake and extraction of air within the chamber, enabling the conversion between atmospheric and vacuum environments; and A gas distribution baffle, wherein gas distribution holes are distributed, the gas distribution baffle is located between the placement platform and the gas inlet at the bottom, and is used to increase gas flow resistance during gas intake or extraction.

2. The conversion chamber as described in claim 1, characterized in that, The placement stage is located on the side wall of the cavity, forming multiple inwardly extending inner protrusions on the same plane, wherein the diameter of the inscribed circle corresponding to each inner protrusion is smaller than the diameter of the wafer.

3. The conversion chamber as described in claim 2, characterized in that, The inner boss is an annular inner boss, and the inner ring diameter of the annular inner boss is smaller than the diameter of the wafer.

4. The conversion chamber as described in claim 1, characterized in that, The air distribution hole is a truncated eccentric through hole, wherein the upper section through hole and the lower section through hole are eccentrically set, and the airflow channels of the two overlap to allow the gas to flow along the overlapping path.

5. The conversion chamber as described in claim 4, characterized in that, The upper and lower through holes have the same diameter, and the diameter of the overlapping path is smaller than the diameter of either the upper or lower through hole.

6. The conversion chamber as described in claim 4, characterized in that, The diameter of the upper through hole is greater than the diameter of the lower through hole, and the diameter of the overlapping path is less than or equal to the diameter of the lower through hole.

7. The conversion chamber as described in claim 4, characterized in that, The top of the upper through hole has a funnel-shaped structure that is wider at the top and narrower at the bottom, so as to guide the gas to flow smoothly along the inner wall of the funnel-shaped structure.

8. The conversion chamber as described in claim 1, characterized in that, It also includes a sealing ring located on the outer edge of the air distribution baffle to seal the internal space of the chamber during air intake and air extraction.

9. The conversion chamber as described in claim 1, characterized in that, The gas inlet includes an air inlet and an air extraction port. The air extraction port is connected to an air pump and is used to evacuate the interior of the chamber after the wafer to be processed is sent into the chamber to form the vacuum environment. The air inlet is connected to an air intake source and is used to introduce air into the chamber after the processed wafer is sent into the chamber to form the atmospheric environment.

10. A semiconductor process apparatus, characterized in that, include: Wafer transfer box, used for temporary storage of wafers; The conversion chamber as described in any one of claims 1 to 9 is used to convert the internal environment of the chamber into a vacuum environment after receiving the wafer to be processed, and to convert the internal environment of the chamber into an atmospheric environment after receiving the processed wafer; A vacuum transfer chamber, internally equipped with a robotic arm, for transferring the wafer between the conversion chamber and the reaction chamber; and The reaction chamber is where the wafer fed into it undergoes a process reaction.

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