Power module of pulse power supply, wafer carrier device and semiconductor process equipment

Abstract

Provided in the present application are a power module of a pulse power supply, a wafer carrier device, and semiconductor process equipment. The power module of a pulse power supply comprises: a board card (6) having a first board surface and a second board surface opposite each other; a power tube (7) arranged on the first board surface; a cooling device (8) which is arranged on a side facing the first board surface of the board card and is in thermally conductive connection with the power tube; a dissipative element (9) which is a surface-mounted element and is arranged on the first board surface and in thermally conductive connection with the cooling device; and a common-mode choke (10) arranged on the second board surface, wherein a secondary-side cable (103) of the common-mode choke (10) passes through the board card and is electrically connected to the dissipative element. In the structure, the common-mode choke, and the power tube and the cooling device are respectively located on two sides of the board card, such that the power module of a pulse power supply can have an optimized structural layout, and thus can be disposed in an internal space of semiconductor process equipment; the dissipative element that cooperates with the common-mode choke is a small-sized surface-mounted element, and can be disposed on the side where the cooling device is located and cooled by the cooling device, thereby avoiding EMI in the internal space of the semiconductor process equipment.

Description

Pulse power supply components, wafer carriers and semiconductor process equipment Technical Field

[0001] This application relates to the field of semiconductor equipment technology, specifically to a pulse power supply component, a wafer carrier device, and semiconductor process equipment. Background Technology

[0002] In semiconductor process equipment, there are some components that can generate electromagnetic waves. Due to some process requirements, sometimes multiple such components with different power are placed in the same space. This can cause mutual interference (EMI) between high-frequency electromagnetic waves, which in turn generates high-frequency noise. Therefore, it is necessary to set up a filter module to suppress high-frequency noise. However, due to the size and structural layout of existing filter modules, they are not suitable for installation and use in the internal space of semiconductor process equipment. Summary of the Invention

[0003] In view of this, this application provides a pulse power supply component that can suppress high-frequency noise in the internal space of semiconductor process equipment and avoid the occurrence of EMI in the internal space.

[0004] To achieve the above objectives, according to a first aspect of this application, a pulse power supply assembly is provided, comprising: a circuit board having a first surface and a second surface disposed opposite to each other; a power transistor disposed on the first surface; a cooling device disposed on one side facing the first surface of the circuit board and thermally connected to the power transistor; a dissipative element, which is a surface-mount element, disposed on the first surface and thermally connected to the cooling device; and a common-mode inductor disposed on the second surface, wherein a secondary cable of the common-mode inductor passes through the circuit board and is electrically connected to the dissipative element.

[0005] In some embodiments, a gap exists between the cooling device and the first plate, and the dissipative element is a surface mount resistor disposed in the gap.

[0006] In some embodiments, a heat sink for dissipating heat from the power transistor is further provided on the first plate surface, and the cooling device is thermally connected to the heat sink.

[0007] In some embodiments, the dissipation element is a semiconductor refrigeration chip, which is at least thermally connected to the heat sink.

[0008] In some embodiments, the thermoelectric cooler is disposed between the heat sink and the cooling device, and is thermally connected to both the heat sink and the cooling device.

[0009] In some embodiments, a heat-conducting element is further included to thermally connect the dissipative element and the cooling device.

[0010] In some embodiments, the thermally conductive element includes a ceramic sheet and a thermally conductive silicon pad, wherein the thickness of the ceramic sheet ranges from 0.5 mm to 1 mm, and the thermal conductivity of the thermally conductive silicon pad ranges from 0.1 W / m*k to 2 W / m*k.

[0011] In some embodiments, the resistance value of the chip resistor is in the range of 10Ω to 100Ω. In some embodiments, the common mode inductor includes: a toroidal magnetic core; a primary side cable, which is a two-strand wire wound around one side of the toroidal magnetic core; and a secondary side cable, which is a single-strand wire wound around the other side of the toroidal magnetic core, with its lead electrically connected to the dissipative element.

[0012] Optionally, in the above-mentioned pulse power supply component, the ratio of the number of turns of the primary side cable wound on the annular magnetic core to the number of turns of the secondary side cable wound on the annular magnetic core is 1:2.

[0013] Optionally, in the aforementioned pulse power supply component, the permeability of the toroidal magnetic core ranges from 10 to 1000, the specific loss coefficient at 1 MHz ranges from 10 to 200, the specific loss coefficient at 15 MHz ranges from 200 to 1000, the temperature coefficient ranges from 200 to 100, and the resistivity ranges from 10... 5 ~10 7 The saturation magnetic flux density ranges from 100 to 600, the remanent magnetic flux density ranges from 100 to 500, the coercivity ranges from 100 to 500, the Curie temperature ranges from 300 to 1000, and the operating frequency ranges from 10MHz to 100MHz.

[0014] And / or,

[0015] The diameter of a single conductor in the primary side cable and the secondary side cable ranges from 0.5mm to 1mm, and the temperature resistance is above 180℃.

[0016] And / or,

[0017] The primary side cable is wound 2 to 5 turns on one side of the toroidal magnetic core, and the secondary side cable is wound 4 to 10 turns in either the forward or reverse direction on the other side of the toroidal magnetic core.

[0018] Optionally, the aforementioned pulse power supply assembly further includes a transformer and a digital isolator disposed on the second board and electrically connected to the primary side cable.

[0019] In some embodiments, the cooling device includes a heat-conducting block with a flow channel for coolant flow; and the same heat-conducting block is connected to multiple boards so that heat exchange can be performed on the dissipative components on each board.

[0020] According to a second aspect of this application, a wafer carrier device is also provided, including a chuck base, a chuck, a pulse signal generator, and the aforementioned pulse power supply component; wherein, the chuck is provided with electrodes, the chuck is used to carry a wafer, and is disposed on the chuck base to form an accommodating space with the chuck base, and the accommodating space is provided with the pulse signal generator and the pulse power supply component; wherein, the pulse signal generator is used to generate a pulse square wave signal, and the pulse power supply component is used to amplify the pulse square wave signal and feed it to the electrodes.

[0021] According to a third aspect of this application, a semiconductor process apparatus is also provided, comprising a chamber body and the aforementioned pulse power supply component disposed within the chamber body; or comprising a chamber body and the aforementioned wafer carrier disposed within the chamber body.

[0022] The pulse power supply component provided in this application places the common-mode inductor and the power transistor that needs to be cooled on two opposite sides of the circuit board. This allows the common-mode inductor, power transistor, and cooling device to be located on opposite sides of the circuit board, thus optimizing the structural layout of the pulse power supply component and enabling it to be placed within the internal space of semiconductor process equipment. Furthermore, a dissipative element that works with the common-mode inductor to suppress high-frequency noise is placed on the side where the cooling device is located. Since this dissipative element is a small surface-mount component, it can be placed on the side where the cooling device is located (i.e., the first board surface) while working with the common-mode inductor. This allows the cooling device to cool the dissipative element, enabling the heat generated by the common-mode inductor in suppressing high-frequency noise to dissipate quickly. This ensures that the common-mode inductor has a good suppression effect on high-frequency noise and avoids the occurrence of EMI within the internal space of semiconductor process equipment. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0024] Figure 1 is a schematic diagram of the PWM signal generator and its related components provided in the embodiment of this application, arranged in the accommodating space;

[0025] Figure 2 is a partial structural schematic diagram of the circuit board, cooling device and common mode inductor of the pulse power supply component provided in the embodiment of this application;

[0026] Figure 3 is a schematic diagram of the structure of the pulse power supply component provided in the embodiment of this application;

[0027] Figure 4 is a schematic diagram of the structure of the pulse power component provided in this application, including the board, cooling device, common mode inductor, dissipative element, power transistor, and semiconductor cooling chip.

[0028] Figure 5 is a schematic diagram of the common-mode inductor structure of the pulse power supply component provided in the embodiment of this application;

[0029] Figure 6 is a schematic diagram of the structure of the isolation device of the pulse power component provided in the embodiment of this application, which is set on the board;

[0030] Figure 7 is a schematic diagram of the noise consumption circuit of the pulse power supply component provided in the embodiment of this application.

[0031] List of reference numerals in the attached diagram: 1-PWM signal generator, 2-pulse power supply component, 3-pulse output component, 4-base, 5-interface panel, 6-board, 7-power transistor, 8-cooling device, 9-dissipative component, 10-common mode inductor, 11-thermal conductive component, 12-heat sink, 13-semiconductor cooling chip, 14-isolation device, 15-insulating ring; 101-toroidal magnetic core, 102-primary side cable, 103-secondary side cable; 1021-first terminal, 1022-second terminal; 1031-third terminal, 1032-fourth terminal. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0033] In semiconductor process equipment, the bias system of a semiconductor etching machine has a single-peak ion energy power supply to provide bias voltage, and requires a multi-channel synchronously adjustable pulse signal generator (i.e., a PWM signal generator) to generate multi-channel complementary pulse waves with a maximum frequency of 50MHz, a minimum pulse width of 5ns, adjustable phase between different channels, pulse width and phase adjustment accuracy of less than 1ns, and controllable envelope pulses. The PWM signal generator 1 and its related components need to be deployed as small components in the space below the chuck inside the semiconductor etching machine, so one of its requirements is small size. Furthermore, the single-peak ion energy power supply generates significant electromagnetic interference, therefore it also needs to have anti-interference capabilities.

[0034] In related technologies, components associated with PWM signal generators include pulse power supply components and pulse output components. PWM signal generators produce high-frequency pulse square waves, which, after Fourier expansion, contain a large number of high-order harmonics (e.g., 1MHz expands to 2MHz, 4MHz, 20MHz, 200MHz, etc.). The entire pulse circuit, including the electronic components such as the pulse power supply components and pulse output components, has a certain parasitic inductance. If placed outside the semiconductor etching machine, the inductive reactance at different frequencies will vary, resulting in inconsistent attenuation and waveform distortion, thus interfering with the process. Therefore, these components need to be placed within the semiconductor etching machine's enclosure space, specifically within the cavity formed by the chuck base and the chuck, directly below the chuck. This significantly reduces parasitic inductance. However, it places the sensitive element (i.e., the PWM signal generator) and the interference source (i.e., the pulse power supply components) in the same environment. In this environment, high-frequency noise can interfere with the normal operation of the PWM signal generator along the signal coaxial cable. Therefore, anti-interference measures, such as setting up a filtering module, are required.

[0035] The filtering module in the pulse power supply component can be a common-mode inductor. A common-mode inductor is an inductor that filters out the influence of high-frequency, high-voltage pulses on the drive circuit. Because high-frequency noise has extremely high energy, the common-mode inductor absorbs this noise energy and dissipates it as heat, resulting in significant heat generation. Under 200V bus voltage conditions, the surface temperature of a common-mode inductor can reach up to 130℃, and this temperature will continue to rise as the voltage increases. The core of the common-mode inductor is made of a temperature-sensitive material. When the temperature is too high, the permeability of the core changes, gradually decreasing. Therefore, excessively high temperatures cause a decrease in the permeability of the common-mode inductor core, leading to a decrease in the inductive reactance and consequently a deterioration in the filtering effect. Therefore, cooling and heat dissipation of the common-mode inductor are necessary.

[0036] In related technologies, pulse power supply components include power transistors, typically GaN MOS transistors (GaN Metal-Oxide-Semiconductor Field-Effect Transistors, a type of power semiconductor device based on gallium nitride material). These transistors generate significant heat, so the cooling device needs to be located on the same side of the circuit board as the GaN MOS transistor for adequate cooling. The pulse power supply components also need to be arranged according to a specific layout on the circuit board. One requirement is to place the pins of the GaN MOS transistor and the common-mode inductor close together. However, due to the large size of the common-mode inductor, and the fact that the space on that side of the circuit board is already occupied by the GaN MOS transistor and the cooling device, there is no space to place the common-mode inductor. Therefore, existing pulse power supply components, due to their size and structural layout, are not suitable for use within the internal space of semiconductor process equipment.

[0037] Based on the above, as shown in Figures 1-7, this application provides a novel pulse power supply component that can be installed and used in the internal space of semiconductor process equipment. This pulse power supply component 2 mainly includes a board 6, a power transistor 7, a cooling device 8, a dissipative element 9, and a common-mode inductor 10. The board 6 is a plate-shaped carrier with a first plate surface and a second plate surface facing away from each other. A circuit board can be formed by printing circuits on it and electrically connecting electronic components. In this embodiment, the electronic component can be the aforementioned power transistor 7.

[0038] Specifically, the power transistor 7 is an electronic component that generates heat during operation. It is mounted on the first surface of the board 6, and its pins are electrically connected to the printed circuit on the board 6. This power transistor 7 is, for example, a MOSFET in the pulse power supply assembly 2, typically a GaN MOSFET. The cooling device 8 is a component that cools the power transistor 7 and the dissipation element 9. It is thermally connected to both the power transistor 7 and the dissipation element 9 (i.e., in close contact) to efficiently cool them. In practice, the cooling device 8 is also mounted on the board 6, and to ensure good heat dissipation for the power transistor 7, it is positioned on the side facing the first surface of the board 6, i.e., the cooling device 8 is located on the side facing away from the second surface. The dissipation element 9 is a small surface-mount component, also mounted on the first surface of the board 6 to make full contact with the cooling device 8, thereby being fully cooled by the cooling device 8 to achieve efficient heat dissipation. The common-mode inductor 10 is one of the main filtering components of the pulse power supply assembly 2 to suppress high-frequency noise. Unlike the devices and components set on the first board surface of board 6, the common mode inductor 10 is set on the second board surface of board 6. The secondary cable 103 of the common mode inductor 10 passes through board 6 and extends to the side where the power transistor 7, cooling device 8 and dissipation element 9 are located, and is electrically connected to the dissipation element 9. In this way, the dissipation element 9 and the common mode inductor 10 can cooperate to form a more complex filtering network, thereby improving the filtering effect on common mode noise and differential mode noise. Especially in high frequency circuits, this combined filtering method can more effectively filter out unwanted signals and improve the signal-to-noise ratio of the circuit.

[0039] The pulse power supply component 2 described above optimizes the structure of the pulse power supply component by placing the common-mode inductor 10 and the power transistor 7 on opposite sides of the circuit board 6. In other words, since the cooling device 8 and the power transistor 7 are located on the same side of the circuit board 6, while the common-mode inductor 10 is located on the side of the circuit board 6 away from the power transistor 7, the cooling device 8 does not occupy the mounting space of the common-mode inductor 10. This allows for sufficient cooling of the power transistor 7 while simultaneously optimizing the arrangement of the common-mode inductor 10 on the circuit board 6, thus enabling its installation on semiconductor process equipment. In the internal space; on the other hand, the dissipation element 9, which works with the common mode inductor 10 to suppress high-frequency noise, is a small surface-mount component, so it can be placed on the first board. That is to say, even if the power transistor 7 and the cooling device 8 are placed on the first board, there is still space to accommodate the dissipation element 9, and the dissipation element 9 can also be cooled by the cooling device 8. In this way, the heat generated by the common mode inductor 10 can be quickly dissipated under the cooling effect of the cooling device, avoiding the occurrence of EMI in the internal space of the semiconductor process equipment, and ensuring the normal operation of the PWM signal generator 1 and the pulse power supply component 2.

[0040] As shown in Figures 2-4, there is a gap between the cooling device 8 and the first plate surface, and the dissipation element 9 is a surface-mount resistor disposed in the gap. In the pulse power supply power assembly 2 provided in this application, there are two main heat-generating components: one is a heat sink 12 connected to the power transistor 7 (e.g., a MOSFET) for heat dissipation of the power transistor 7, and the other is a common-mode inductor 10. Since the power transistor 7 has a large thermal power, it generates a lot of heat and heats up quickly. Therefore, there must be good thermal conduction between the heat sink 12 and the cooling device 8. As is well known, the longer the flow path of the heat-conducting medium, the worse the thermal conductivity. Therefore, in order to achieve good thermal conduction, the flow path of the heat-conducting medium needs to be shortened as much as possible. Therefore, placing the cooling device 8 and the power transistor 7 on the same side of the board 6 allows the cooling device 8 and the heat sink 12 to fit tightly together. Since the heat sink 12 itself also needs to dissipate heat, it also needs to have a certain heat dissipation area. This means the heat sink 12 will protrude relative to the first surface of the board 6. Therefore, when the cooling device 8 is attached to the heat sink 12, there will be a gap between it and the first surface. However, the width of this gap is not very large, and the common-mode inductor in related technologies cannot be placed in the gap. Therefore, the pulse power supply components in related technologies cannot be used in the internal space of semiconductor process equipment due to their size and structural layout (i.e., the common-mode inductor cannot be placed in the gap). In this application, although the common-mode inductor 10 also cannot be placed in the gap due to its large size, without improving the pin placement of the common-mode inductor 10 on the board 6, this application places the common-mode inductor 10 on the second surface of the board 6. To ensure that the heat generated by the common-mode inductor 10 can be dissipated in a timely manner… The common-mode inductor 10 still needs to be cooled by the cooling device 8. Based on this, the dissipation element 9 that works with the common-mode inductor 10 is placed on the first board surface that can contact the cooling device 8. Since the dissipation element 9 is a small surface-mount element, it can be placed in the gap between the cooling device 8 and the first board surface to make full use of the space. Furthermore, the secondary side cable 103 of the common-mode inductor 10 passes through the board 6 from the second board surface to the first board surface to be electrically connected to the dissipation element 9. This allows the heat generated by high-frequency noise to be transferred to the dissipation element 9 and then quickly dissipated through the cooling device 8.

[0041] Among them, the dissipation element 9 is preferably a surface-mount resistor. The reason for choosing a surface-mount resistor is twofold: firstly, it is more suitable for use with the common-mode inductor 10; secondly, it is small in size, easy to install in gaps, and is relatively common and inexpensive. To ensure good heat dissipation, the surface-mount resistor is preferably a thick-film resistor with a resistance range of 10Ω to 100Ω and an accuracy of less than 1%. Alternatively, the dissipation element 9 can also be a capacitor or a variable resistor, etc.

[0042] In a further embodiment of this application, the pulse power supply component 2 may also be provided with an LED indicator that is electrically connected to the dissipation element 9 or the common mode inductor 10. The brightness of this LED indicator will change with the strength of the high-frequency noise, so that the change of the high-frequency noise can be obtained more intuitively.

[0043] Specifically, to better adapt to the above layout and to ensure sufficient heat conduction, this application also includes a thermally conductive element 11 that connects the surface mount resistor and the cooling device 8. This thermally conductive element 11 is, for example, thermal grease, formed by combining a ceramic sheet and a thermally conductive silicone pad. The ceramic sheet is made of aluminum nitride or beryllium oxide and has a thickness of 0.5 mm to 1 mm. The thermal conductivity of the thermally conductive silicone pad is 0.1 to 2 W / m*k. Furthermore, the thermally conductive element 11 is located in the aforementioned gap and is tightly fitted to the surface mount resistor and the cooling device 8. In other words, the thermally conductive element 11 is placed between the surface mount resistor and the cooling device 8 to fill the gap between them, thus facilitating the thermal connection between the dissipation element 9 and the cooling device 8, thereby achieving rapid heat dissipation.

[0044] In some other embodiments, the heat dissipation of the common mode inductor 10 can also be achieved in other ways. For example, based on the first board surface having a power transistor 7 (e.g., a MOSFET) and a heat sink 12 for dissipating heat from the power transistor 7 (e.g., a MOSFET), and the cooling device 8 being thermally connected to the heat sink 12, the dissipation element 9 can be replaced with a thermoelectric cooler 13. The thermoelectric cooler 13 has a cold end and a hot end, and at least the cold end of the thermoelectric cooler 13 is thermally connected to the heat sink 12. Specifically, the secondary cable 103 is converted to DC by a bridge rectifier and then passes through the board 6 and is electrically connected to the thermoelectric cooler 13 disposed on the first board surface. This allows the heat generated by high-frequency noise to be transferred to the thermoelectric cooler 13. Since the thermoelectric cooler 13 has its own cooling function, in other words, when power is supplied to the thermoelectric cooler 13, the cold end temperature of the thermoelectric cooler 13 decreases, thereby achieving cooling. Therefore, by making the thermoelectric cooler 13 thermally connected to the heat sink 12 of the power transistor 7 (e.g., MOSFET), the waste energy generated by electromagnetic interference can be used to power the thermoelectric cooler 13, thereby allowing the thermoelectric cooler 13 to dissipate heat and cool the power transistor 7 (e.g., MOSFET), achieving simultaneous improvement in efficiency and performance.

[0045] In a specific configuration, as shown in Figure 4, the thermoelectric cooler 13 is placed between the heat sink 12 and the cooling device 8, so that the cold end of the thermoelectric cooler 13 is thermally connected to the heat sink 12, and the hot end of the thermoelectric cooler 13 is thermally connected to the cooling device 8. This allows the temperature of the hot end of the thermoelectric cooler 13 to be reduced while the cold end is cooling, thereby improving the cooling efficiency of the cold end. When connecting the thermoelectric cooler 13 to the first plate surface, the thermoelectric cooler 13 is also placed in the gap, allowing it to thermally connect to both the heat sink 12 and the cooling device 8. In other words, the thermoelectric cooler 13 is placed between the heat sink 12 and the cooling device 8, ensuring that the two opposing surfaces of the thermoelectric cooler 13 are fully in contact with the heat sink 12 and the cooling device 8, respectively. This allows the cooling device 8 to cool both the heat sink 12 and the thermoelectric cooler 13 through the thermal conductivity of the thermoelectric cooler 13, resulting in faster heat dissipation from the common-mode inductor 10.

[0046] In some embodiments, as shown in FIG5, the common mode inductor 10 includes: a toroidal core 101, a primary side cable 102, and a secondary side cable 103; the primary side cable 102 is a two-strand wire wound around one side of the toroidal core 101; the secondary side cable 103 is a single-strand wire wound around the other side of the toroidal core 101, and the lead end of the secondary side cable 103 is electrically connected to the dissipative element 9. In this application, the common-mode impedance of the common-mode inductor 10 needs to be sufficiently large (above 1000 ohms), the differential-mode impedance needs to be sufficiently small (leakage inductance should be within 100nH), and the impedance needs to remain relatively stable within the range of 10MHz to 200MHz. To better meet this requirement, the preferred materials and parameters of the common-mode inductor 10 are as follows: the toroidal core 101 is made of ferrite, which is sensitive to temperature changes, with a permeability between 10 and 1000, a specific loss coefficient between 10 and 200 at 1MHz, a specific loss coefficient between 200 and 1000 at 15MHz, a temperature coefficient between 200 and 100, and a resistivity between 10. 5 ~10 7 The saturation magnetic flux density is between 100 and 600, the residual magnetic flux density is between 100 and 500, the coercivity is between 100 and 500, the Curie temperature is between 300 and 1000, and the operating frequency is between 10MHz and 100MHz; the wire diameter of a single conductor in the primary side cable 102 and the secondary side cable 103 is between 0.5 and 1mm, and the temperature resistance is above 180℃.

[0047] The structure of the common-mode inductor 10 is shown in Figures 2-5. The cable closest to the power transistor 7 (e.g., a MOSFET) is the primary-side cable 102. This primary-side cable 102 is a two-strand wire (i.e., the primary-side cable 102 is a bundle of two wires) and has a first end 1021 and a second end 1022. The first end 1021 connects to the common-mode input, specifically between the gate and source terminals of the power transistor 7 (e.g., a MOSFET). The second end 1022 connects to the common-mode output, specifically between the positive and negative terminals of the driver chip. The secondary-side cable 103 is a single-strand wire (i.e., the secondary-side cable 10...). 3 includes only one wire) and has a third end 1031 and a fourth end 1032. The third end 1031 is connected to one end of the dissipation element 9, and the fourth end 1032 is connected to the other end of the dissipation element 9. In this structure, the magnetic flux generated by the common mode current in the primary side cable 102 will induce an electromotive force in the secondary side cable 103, thereby making a voltage between the primary side cable 102 and the secondary side cable 103. That is, the energy of the common mode noise is transferred from the primary side cable 102 to the secondary side cable 103, and then the energy is released as heat through the dissipation element 9.

[0048] In some embodiments, the ratio of the number of turns of the primary side cable 102 wound on the toroidal core 101 to the number of turns of the secondary side cable 103 wound on the toroidal core 101 is 1:2. During specific winding, the primary side cable 102 is wound 2 to 5 turns on one side of the toroidal core 101, while the secondary side cable 103 is wound 4 to 10 turns in either the forward or reverse direction on the other side of the toroidal core 101, always maintaining a 1:2 ratio. In this structure, by making the primary side cable 102 a two-strand wire and the secondary side cable 103 a single-strand wire, and maintaining a 1:2 ratio, the operating performance of the common-mode inductor 10 can be optimized, resulting in better suppression of high-frequency noise. Furthermore, the common-mode inductor 10 has a simple structure, moderate size, and is easy to install on the second surface of the board 6.

[0049] In a further embodiment, as shown in FIG6, the pulse power supply component 2 provided in this application further includes a transformer and a digital isolator disposed on the second board and electrically connected to the primary side cable 102, that is, it includes an isolation device 14 (the transformer and the digital isolator are collectively referred to as isolation device 14). By including a transformer and a digital isolator in the pulse power supply component, the quality of the signal emitted by the PWM signal generator 1 can be better guaranteed under the isolation of the transformer and the isolation effect of the low parasitic capacitance digital isolator.

[0050] Specifically, as shown in Figure 7, a noise dissipation circuit can be formed by combining the dissipation element 9 and the common-mode inductor 10. The dissipation element 9 can include multiple resistors connected in parallel (i.e., a dissipation array resistor). When noise passes through the primary side of the common-mode inductor 10, low-frequency control signals and DC voltages can flow through easily without being affected. When noise passes through, the subsequent dissipation array resistors R1 to R4 can quickly dissipate the noise energy. Adjusting the number of turns of the primary and secondary cables of the common-mode inductor 10 can adjust the noise inductance of the circuit, thereby achieving different filtering characteristics (such as different frequencies). Using this method, noise energy can be effectively directed to a place where heat dissipation is convenient, thus achieving heat control simultaneously.

[0051] As shown in Figures 2-4, the cooling device 8 includes a heat-conducting block with a flow channel for coolant flow. The same heat-conducting block is connected to multiple circuit boards 6 (not shown) to exchange heat with the dissipation components 9 on each board 6. In this structure, the heat-conducting block contacts the power transistor 7 and the dissipation components 9 to conduct cooling to them. The heat-conducting block is preferably made of a metal with good thermal conductivity, such as copper, aluminum, silver, or stainless steel. The heat-conducting block has flow channels for guiding the coolant, which can be cooling water, cooling oil, or refrigerant, etc., providing cooling to the heat-conducting block as it flows through the channels. Preferably, the same heat-conducting block is connected to two boards 6, and the two boards 6 are respectively connected to the two largest surfaces of the heat-conducting block, so that one heat-conducting block can simultaneously cool the power transistors 7 and dissipation components 9 on the two boards 6. This simplifies the structure of the pulse power supply assembly, saves space, facilitates the use of the pulse power supply assembly in the internal chamber of semiconductor process equipment, and can also make full use of the cooling capacity of the cooling device 8.

[0052] Furthermore, this application embodiment also provides a wafer carrier device, including a chuck base (in Figure 1, to fully demonstrate the layout of the pulse power supply component 2, the entire structure of the chuck base is not shown, but only the base 4 of the chuck base is shown), a chuck (this chuck can be, for example, an electrostatic chuck), a pulse signal generator (i.e., PWM signal generator 1), and the aforementioned pulse power supply component 2; wherein,

[0053] The chuck contains electrodes and is used to carry the wafer. The chuck is mounted on a chuck base to form an accommodating space, which includes a PWM signal generator 1, a pulse power supply component, and a pulse output component 3. The PWM signal generator 1 generates a pulse square wave signal, and the pulse power supply component amplifies the pulse square wave signal before feeding it to the electrodes through the pulse output component 3. In a specific structure, as shown in Figure 1, an insulating ring 15 and an interface disk 5 are generally provided between the chuck (not shown) and the chuck base. The insulating ring 15 is located above the interface disk 5, and the chuck is positioned above the insulating ring 15. Both the insulating ring 15 and the interface disk 5 have inner spaces. The chuck base includes an annular base (not shown in the figure) and a base 4, which has an inner space. The chuck base is a support seat located below the chuck, used to support and install the chuck. Since the annular base, insulating ring 15, and interface plate 5 have inner spaces, these inner spaces form an accommodating space when the chuck is placed on the chuck base. The base 4 of the chuck base blocks the lower opening of this accommodating space. This accommodating space can be used to accommodate the PWM signal generator 1, the pulse power supply component 2, and the pulse output component 3. During installation, the PWM signal generator 1 is placed near or at the center of the chuck base (or base 4). Multiple pulse power supply components are provided (e.g., three as shown in Figure 1). To meet process requirements and for installation within the accommodating space... To meet the requirements and optimize the performance and structural layout of the components, these pulse power supply components are placed on the inner walls of the insulating ring 15, the interface disk 5, and / or the annular base, and are evenly distributed around the insulating ring 15, the interface disk 5, and the annular base. This also allows the pulse power supply components to evenly surround the PWM signal generator 1. The pulse output component 3 is connected to the top of the pulse power supply components (i.e., the end of the pulse power supply component away from the PWM signal generator 1), and each pulse power supply component has a pulse output component 3 at its top. This pulse output component 3 can be a wire for pulse output, and the wire is electrically connected to the electrode set in the chuck, thereby transmitting a pulse signal to the reaction chamber of the semiconductor process equipment through the electrode.

[0054] Since this wafer carrier device includes the aforementioned pulse power supply component, the beneficial effects of the pulse power supply component on the wafer carrier device are explained in the above content and will not be repeated here.

[0055] In addition, this application embodiment also provides a semiconductor process apparatus, which includes a chamber body and the aforementioned pulse power supply component or the aforementioned wafer carrier device disposed within the chamber body.

[0056] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0057] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0058] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0059] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0060] It should be understood that the qualifiers “first,” “second,” “third,” “fourth,” “fifth,” and “sixth” used in the description of the embodiments of this application are only used to more clearly illustrate the technical solutions and are not intended to limit the scope of protection of this application.

[0061] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A pulse power supply component, characterized in that, include: The circuit board has a first board surface and a second board surface arranged opposite to each other; The power transistor is disposed on the first board surface; A cooling device is disposed on one side of the first plate facing the board, and the cooling device is thermally connected to the power tube; The dissipative element is a surface-mount element, which is disposed on the first plate and thermally connected to the cooling device; A common-mode inductor is disposed on the second board surface, and the secondary cable of the common-mode inductor passes through the board and is electrically connected to the dissipative element.

2. The pulsed power supply power assembly of claim 1, wherein, There is a gap between the cooling device and the first plate surface, and the dissipation element is a surface mount resistor disposed in the gap.

3. The pulsed power supply power assembly of claim 1, wherein, The first plate surface is also provided with a heat sink for dissipating heat from the power transistor, and the cooling device is thermally connected to the heat sink.

4. The pulsed power supply power pack of claim 3, wherein, The dissipation element is a semiconductor refrigeration chip, and is at least thermally connected to the heat sink.

5. The pulsed power supply power pack of claim 4, wherein, The semiconductor cooling chip is disposed between the heat sink and the cooling device, and is thermally connected to both the heat sink and the cooling device.

6. The pulsed power supply power pack of claim 2, wherein, It also includes a thermally conductive component that connects the chip resistor and the cooling device.

7. The pulsed power assembly of claim 6, wherein, The thermally conductive component includes a ceramic sheet and a thermally conductive silicon pad. The thickness of the ceramic sheet ranges from 0.5 mm to 1 mm, and the thermal conductivity of the thermally conductive silicon pad ranges from 0.1 W / m*k to 2 W / m*k.

8. The pulsed power supply power pack of claim 2, wherein, The resistance value of the chip resistor is in the range of 10Ω to 100Ω.

9. The pulsed power assembly of any of claims 1-8, wherein, The common-mode inductor includes: Toroidal magnetic core; The primary side cable is a two-strand wire, wound around one side of the toroidal magnetic core; The secondary side cable is a single strand, wound around the other side of the annular magnetic core, and its lead-out end is electrically connected to the dissipative element.

10. The pulsed power supply power pack of claim 9, wherein, The ratio of the number of turns of the primary side cable wound on the annular magnetic core to the number of turns of the secondary side cable wound on the annular magnetic core is 1:

2.

11. The pulse power supply component according to claim 9, characterized in that, The toroidal magnetic core has a permeability range of 10 to 1000, a specific loss coefficient range of 10 to 200 at 1 MHz, a specific loss coefficient range of 200 to 1000 at 15 MHz, a temperature coefficient range of 200 to 100, a resistivity range of 105 to 107, a saturation magnetic flux density range of 100 to 600, a remanent magnetic flux density range of 100 to 500, a coercivity range of 100 to 500, a Curie temperature range of 300 to 1000, and an operating frequency range of 10 MHz to 100 MHz. And / or, The diameter of a single conductor in the primary side cable and the secondary side cable ranges from 0.5 to 1 mm, and the temperature resistance is above 180℃. And / or, The primary side cable is wound 2 to 5 turns on one side of the toroidal magnetic core, and the secondary side cable is wound 4 to 10 turns in either the forward or reverse direction on the other side of the toroidal magnetic core.

12. The pulsed power supply power pack of claim 9, wherein, It also includes a transformer and a digital isolator disposed on the second plate and electrically connected to the primary side cable.

13. The pulsed power supply power assembly of claim 1, wherein, The cooling device includes a heat-conducting block, and the heat-conducting block has a flow channel for the flow of coolant. Furthermore, the same heat-conducting block is connected to multiple boards so that heat exchange can be performed on the dissipative components on each board.

14. A wafer carrier apparatus, comprising: It includes a chuck base, a chuck, a pulse signal generator, and a pulse power supply assembly as described in any one of claims 1-13; wherein, The chuck is provided with electrodes, the chuck is used to carry the wafer, and is disposed on the chuck base to form an accommodating space with the chuck base, and the accommodating space is provided with the pulse signal generator and the pulse power supply component; The pulse signal generator is used to generate a pulse square wave signal, and the pulse power supply component is used to amplify the pulse square wave signal and feed it into the electrode.

15. A semiconductor process apparatus, characterized by, Includes a chamber body and a pulse power supply assembly as described in any one of claims 1-13 disposed within the chamber body; It may include a chamber body and a wafer carrier device as described in claim 14 disposed within the chamber body.

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