Ion implantation device and beam current measuring apparatus

Abstract

A beam current measuring device (100) for an ion implantation device is provided with: a first electrode (110) for detecting ions of an ion beam irradiated on a first beam irradiation surface; a plurality of second electrodes (120) that are disposed downstream of the first electrode (110) in the direction of travel of the ion beam and that respectively correspond to a plurality of apertures (116) of the first electrode (110), the plurality of second electrodes (120) respectively detecting ions of the ion beam irradiated on a second beam irradiation surface of each of the plurality of second electrodes (120); and a magnetic field generator (130) configured so as to apply a first magnetic field (B11) that suppresses the inflow of electrons to the first electrode (110) and the outflow of electrons from the first electrode (110), and a second magnetic field (B12) that suppresses the inflow of electrons to each of the plurality of second electrodes (120) and the outflow of electrons from each of the plurality of second electrodes (120).

Description

Technical Field

[0001] This invention relates to an ion implantation device and a beam current measuring device. Background Technology

[0002] In semiconductor device manufacturing processes, ion implantation is typically performed on semiconductor wafers to alter their conductivity, crystal structure, or other purposes (also known as ion implantation). To monitor or control the ion beam, the beam current distribution can be measured. Therefore, a technique is known to place a beam current meter, for example, at the end of the beam line (see, for example, Patent Document 1).

[0003] Previous technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2021-72251 Summary of the Invention

[0004] The technical problem to be solved by the invention Typically, such beam current meters measure the charge per unit time during ion beam incidence, thereby obtaining the beam current of the ion beam. Therefore, if suspended electrons flow into the beam current meter from the surrounding space or secondary electrons released from the beam current meter during ion beam incidence are lost into the surrounding space, the beam current meter's measurement of the ion beam's beam current may become inaccurate.

[0005] One exemplary objective of one embodiment of the present invention is to provide a technique for accurately measuring the beam current of an ion beam.

[0006] means for solving technical problems An ion implantation apparatus according to one embodiment of the present invention includes a beam current measuring device, the beam current measuring device comprising: a first electrode having a first beam irradiation surface for detecting ions of an ion beam irradiating the first beam irradiation surface, and having a plurality of apertures formed on the first beam irradiation surface in a predetermined arrangement; a plurality of second electrodes disposed downstream of the first electrode in the ion beam travel direction and corresponding to the plurality of apertures respectively, the plurality of second electrodes each having a second beam irradiation surface for detecting ions of an ion beam irradiating the respective second beam irradiation surface of the plurality of second electrodes through the plurality of apertures respectively; and a magnetic field generator configured to apply a first magnetic field that suppresses the inflow of electrons to the first electrode and the outflow of electrons from the first electrode and a second magnetic field that suppresses the inflow of electrons to the plurality of second electrodes respectively and the outflow of electrons from the plurality of second electrodes respectively.

[0007] A beam current measuring device according to one embodiment of the present invention includes: a first electrode having a first beam irradiation surface for detecting ions of an ion beam irradiating the first beam irradiation surface, and having a plurality of apertures formed on the first beam irradiation surface in a predetermined arrangement; a plurality of second electrodes disposed downstream of the first electrode in the ion beam travel direction and corresponding to the plurality of apertures respectively, each of the plurality of second electrodes having a second beam irradiation surface for detecting ions of an ion beam irradiating the respective second beam irradiation surface of the plurality of second electrodes through the plurality of apertures respectively; and a magnetic field generator configured to apply a first magnetic field that suppresses the inflow of electrons into the first electrode and the outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into the plurality of second electrodes respectively and the outflow of electrons from the plurality of second electrodes respectively.

[0008] Furthermore, any combination of the above-mentioned constituent elements, as well as the substitution of the constituent elements and descriptions of the present invention among methods, apparatuses, systems, etc., are also effective as embodiments of the present invention.

[0009] Invention Effects According to a non-limiting exemplary embodiment of the present invention, a technique for accurately measuring the beam current of an ion beam can be provided. Attached Figure Description

[0010] Figure 1 This is a top view showing the schematic structure of the ion implantation apparatus involved in the embodiment.

[0011] Figure 2 This is a side view showing the schematic structure of the ion implantation apparatus involved in the embodiment.

[0012] Figure 3 This is a front view showing the schematic structure of the first holding device and the second holding device.

[0013] Figure 4 Figures (a) and (b) are top views schematically showing the orientation of the first object being processed, held by the first holding device, in the horizontal direction.

[0014] Figure 5 Figures (a) to (c) are side views schematically showing the orientation of the first object being processed, held by the first holding device, in the vertical direction.

[0015] Figure 6 This is a front view showing an example of the operation of the first holding device and the second holding device.

[0016] Figure 7 This is a front view showing an example of the operation of the first holding device and the second holding device.

[0017] Figure 8This is a front view showing an example of the operation of the first holding device and the second holding device.

[0018] Figure 9 This is a front view showing an example of the operation of the first holding device and the second holding device.

[0019] Figure 10 This is a flowchart illustrating the process of the ion implantation method involved in the implementation method.

[0020] Figure 11 This is a flowchart illustrating the process of the ion implantation method involved in the modified example.

[0021] Figure 12 This is a top view showing the schematic structure of an ion implantation apparatus according to another embodiment.

[0022] Figure 13 This is a side view showing a schematic structure of an ion implantation apparatus according to another embodiment.

[0023] Figure 14 This is a schematic front view of the beam current measuring device according to the embodiment.

[0024] Figure 15 It is a schematic representation Figure 14 The cross-sectional view of the beam current measuring device shown is taken along line AA.

[0025] Figure 16 This is a schematic diagram illustrating an example of the magnetic field generator of the beam current measuring device according to the embodiment and the electron suppression magnetic field generated therefrom.

[0026] Figure 17 It is a more detailed expression Figure 15 A partial cross-sectional view of a portion of the beam current measuring device shown.

[0027] Figure 18 This is a schematic diagram illustrating another example of the magnetic field generator of the beam current measuring device according to the embodiment.

[0028] Figure 19 Figures (a) and (b) are schematic diagrams illustrating exemplary magnet configurations for a magnetic field generator. Detailed Implementation

[0029] Hereinafter, with reference to the accompanying drawings, the ion implantation apparatus and ion implantation method for implementing the present invention will be described in detail. Furthermore, the same symbols will be used to denote the same elements in the description of the drawings, and repeated descriptions will be omitted where appropriate. Moreover, the structures described below are illustrative and do not limit the scope of the present invention in any way.

[0030] Figure 1This is a top view showing the schematic structure of the ion implantation apparatus 10 according to the embodiment. Figure 2 This is a side view showing a schematic structure of the ion implantation apparatus 10 according to the embodiment. The ion implantation apparatus 10 is configured to perform ion implantation treatment on the surfaces of the workpieces W1 and W2. The workpieces W1 and W2 are, for example, substrates and, for example, semiconductor wafers. For ease of explanation, the workpiece is sometimes referred to as a "substrate" or a "wafer" in this specification, but this is not intended to limit the object of the implantation treatment to a specific object. The workpiece may also be a large substrate (e.g., a glass substrate or a resin substrate) used to manufacture a flat panel display (FPD).

[0031] The ion implantation apparatus 10 is configured to reciprocate an ion beam in a predetermined scanning direction and to reciprocate the workpieces W1 and W2 in a direction intersecting the scanning direction, thereby irradiating the entire treated surface of the workpieces W1 and W2 with a point-like ion beam. The ion implantation apparatus 10 includes a beam generation device 12, an implantation processing chamber 14, a transport device 16, and a control device 18.

[0032] The beam generating apparatus 12 is configured to generate an ion beam and deliver it to the implantation processing chamber 14. The implantation processing chamber 14 contains the workpieces W1 and W2, which are the objects to be implanted. Inside the implantation processing chamber 14, the ion beam provided by the beam generating apparatus 12 irradiates the workpieces W1 and W2. The transport device 16 is configured to move the workpieces W1 and W2 into the implantation processing chamber 14 before implantation processing and to remove the workpieces W1 and W2 from the implantation processing chamber 14 after implantation processing. The control device 18 is configured to control all operations of the various devices constituting the ion implantation apparatus 10. The ion implantation apparatus 10 includes the beam generating apparatus 12, the implantation processing chamber 14, and a vacuum exhaust system (not shown) for providing the desired vacuum environment to the transport device 16.

[0033] The beam generation apparatus 12 comprises, in sequence from the upstream side of beamline A, an ion source 20, an extraction section 22, a mass spectrometry analysis section 24, a beam shaping section 26, a beam scanning section 28, a beam parallelization section 30, an acceleration / deceleration section 32, and an energy analysis section 34. Here, beamline A is used for ease of explanation and has the same meaning as the ideal beam trajectory designed when the beam scanning section 28 is not scanning the ion beam. Furthermore, upstream of beamline A refers to the side closer to the ion source 20, and downstream of beamline A refers to the side closer to the injection processing chamber 14 (or beam blocker 38).

[0034] The beam generating apparatus 12 is configured such that beamline A bends along its path. The direction of travel of beamline A changes at the mass spectrometer 24 and the energy analyzer 34. Beamline A is configured to extend in a horizontal plane orthogonal to the vertical direction. In this specification, for ease of explanation, the direction of travel of the ion beam along beamline A is defined as the z-direction, the vertical direction as the y-direction, and the direction orthogonal to both the y-direction and the z-direction as the x-direction. In particular, the direction of travel of beamline A from the ion source 20 to the mass spectrometer 24 is defined as the z1-direction, and the direction orthogonal to both the y-direction and the z1-direction is defined as the x1-direction. Furthermore, the direction of travel of beamline A from the mass spectrometer 24 to the energy analyzer 34 is defined as the z2-direction, and the direction orthogonal to both the y-direction and the z2-direction is defined as the x2-direction. Additionally, the direction of travel of beamline A downstream of the energy analyzer 34 is defined as the z3-direction, and the direction orthogonal to both the y-direction and the z3-direction is defined as the x3-direction.

[0035] The ion source 20 is configured to generate ions constituting an ion beam. The ion source 20 includes an arc chamber 20a. The arc chamber 20a has an internal space 20b for generating plasma. The arc chamber 20a has a generally cuboid box shape that separates the internal space 20b. The arc chamber 20a has a front slit 20c for extracting ions from the plasma generated in the internal space 20b. The front slit 20c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). That is, the opening width of the front slit 20c in the horizontal direction is greater than the opening width of the front slit 20c in the vertical direction.

[0036] The ion source 20 includes a source magnet device 20d. The source magnet device 20d is configured to apply a horizontal (x1 direction) magnetic field B1 to the internal space 20b of the arc chamber 20a. By applying the magnetic field B1, the source magnet device 20d improves the generation efficiency of plasma generated in the internal space 20b of the arc chamber 20a. The direction of the magnetic field B1 applied by the source magnet device 20d corresponds to the length direction of the front slit 20c.

[0037] An extraction section 22 is located downstream of the ion source 20. The extraction section 22 extracts ions from the ion source 20 to generate an ion beam. The extraction section 22 is configured to extract ions from plasma generated in the internal space 20b of the arc chamber 20a. The extraction section 22 includes a first extraction electrode 22a and a second extraction electrode 22b. The first extraction electrode 22a is located downstream of the arc chamber 20a, and the second extraction electrode 22b is located downstream of the first extraction electrode 22a. A negative suppression voltage is applied to the first extraction electrode 22a. A ground voltage is applied to the second extraction electrode 22b. Additionally, a positive extraction voltage is applied to the arc chamber 20a.

[0038] The first lead-out electrode 22a has a first lead-out opening 22c through which the ion beam passes. Similar to the front slit 20c, the first lead-out opening 22c has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the first lead-out opening 22c in the horizontal direction is greater than the opening width of the first lead-out opening 22c in the vertical direction. The second lead-out electrode 22b has a second lead-out opening 22d through which the ion beam passes. Similar to the front slit 20c, the second lead-out opening 22d has a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). That is, the opening width of the second lead-out opening 22d in the horizontal direction is greater than the opening width of the second lead-out opening 22d in the vertical direction.

[0039] The ion beam extracted by the extraction section 22 can be a ribbon-shaped beam that diffuses in the horizontal direction (x1 direction). By increasing the horizontal opening width of the front slit 20c, the first extraction opening 22c, and the second extraction opening 22d, the horizontal dimension of the ribbon-shaped beam can be increased. As a result, the beam current of the ion beam extracted from the ion source 20 can be easily increased.

[0040] The mass spectrometry analysis unit 24 is located downstream of the extraction unit 22. The mass spectrometry analysis unit 24 is configured to select the necessary ion species from the ion beam extracted by the extraction unit 22 through mass spectrometry analysis. The mass spectrometry analysis unit 24 includes a mass spectrometry analysis magnet device 24a, a mass spectrometry analysis slit 24b, and an injector Faraday cup 24c.

[0041] The mass spectrometer magnet device 24a applies a magnetic field B2 to the ion beam, deflecting it along different paths according to the mass-to-charge ratio M = m / q (where m is mass and q is charge). The mass spectrometer magnet device 24a applies a magnetic field B2 in the vertical direction (-y direction), deflecting the ion beam in the horizontal direction (x1 direction). The strength of the magnetic field B2 applied by the mass spectrometer magnet device 24a is adjusted to allow ion species with the desired mass-to-charge ratio M to pass through the mass spectrometer slit 24b. The ion beam passing through the mass spectrometer slit 24b is, for example, deflected by 90 degrees when passing through the mass spectrometer magnet device 24a.

[0042] The mass spectrometry slit 24b is located downstream of the mass spectrometry magnet device 24a. The mass spectrometry slit 24b has a slit shape with a short opening width in the horizontal direction (x2 direction) and a long opening width in the vertical direction (y direction). That is, the opening width of the mass spectrometry slit 24b in the vertical direction is greater than the opening width of the mass spectrometry slit 24b in the horizontal direction.

[0043] The mass spectrometry slit 24b can also be configured to have a variable opening width (i.e., slit width) in the horizontal direction (x2 direction) to adjust the mass resolution. The mass spectrometry slit 24b can also be configured to consist of two beam shields movable in the slit width direction, and the slit width can be adjusted by changing the interval between the two beam shields. The mass spectrometry slit 24b can also be configured to have a variable slit width by switching between any of a plurality of slits with different slit widths.

[0044] An injector Faraday cup 24c is positioned downstream of the mass spectrometry analysis slit 24b. The injector Faraday cup 24c measures the beam current of the mass-spectrated ion beam passing through the mass spectrometry analysis slit 24b. By simultaneously changing the magnetic field strength of the mass spectrometry analysis magnet device 24a and measuring the beam current, the injector Faraday cup 24c can measure the mass spectrometry analysis spectrum of the ion beam. The measured mass spectrometry analysis spectrum can be used to calculate the mass resolution of the mass spectrometry analysis unit 24.

[0045] The injector Faraday cup 24c is configured to enter and exit the beamline A via the operation of the injector drive unit 24d. The injector drive unit 24d moves the injector Faraday cup 24c in a direction orthogonal to the z2 direction (e.g., the x2 direction) extending from the beamline A. Figure 1 As shown by the dashed line, the Faraday cup 24c implanter, when positioned on beamline A, blocks the ion beam toward the downstream side. On the other hand, as... Figure 1 As shown by the solid line, the injector Faraday cup 24c releases the blockage of the ion beam toward the downstream side after being withdrawn from beam line A.

[0046] A magnetic shield 23 can be provided between the extraction section 22 and the mass spectrometry analysis section 24. The magnetic shield 23 is configured to suppress magnetic field interference between the magnetic field B1 applied to the ion source 20 and the magnetic field B2 applied to the mass spectrometry analysis section 24. The magnetic shield 23 is made of a magnetic material such as an electromagnet. The magnetic shield 23 has a passage opening 23a for the ion beam to pass through from the extraction section 22 toward the mass spectrometry analysis section 24. Similar to the front slit 20c, the passage opening 23a may also have a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). That is, the opening width in the horizontal direction of the passage opening 23a can be greater than the opening width in the vertical direction of the passage opening 23a.

[0047] A beamforming section 26 is disposed downstream of the mass spectrometry analysis section 24. The beamforming section 26 is configured to shape the ion beam after passing through the mass spectrometry analysis section 24 into a desired cross-sectional shape and convergence / divergence angle. The beamforming section 26 includes a lens device for adjusting at least one of the cross-sectional shape and convergence / divergence angle of the ion beam. For example, the beamforming section 26 is configured to converge a horizontally diffused band-shaped ion beam into a point-shaped ion beam.

[0048] The beamforming unit 26 includes multiple lens devices, such as three lens devices 26a, 26b, and 26c. These three lens devices 26a to 26c are configured, for example, as electric field-type three-segment quadrupole lenses (also called tripolar Q lenses). By combining multiple lens devices, the beamforming unit 26 can independently adjust the convergence or divergence of the ion beam in both the horizontal direction (x2 direction) and the vertical direction (y direction). The beamforming unit 26 may also include magnetic field-type lens devices. Furthermore, the beamforming unit 26 may also include lens devices that shape the ion beam using both electric and magnetic fields.

[0049] A beam scanning unit 28 is disposed downstream of a beam forming unit 26. The beam scanning unit 28 is configured to reciprocate the ion beam in a predetermined scanning direction to generate a scanning beam SB. The beam scanning unit 28 can also be described as a beam deflection device that deflects the ion beam formed by the beam forming unit 26 in the predetermined scanning direction. The beam scanning unit 28 is configured such that the scanning direction is different from the horizontal direction, for example, configured such that the scanning direction is the vertical direction (y-direction).

[0050] The beam scanning unit 28 includes a pair of scanning electrodes 28a and 28b facing each other in the vertical direction (y-direction). The scanning electrode pairs 28a and 28b are connected to a variable voltage power supply (not shown). By periodically changing the voltage applied between the scanning electrode pairs 28a and 28b, the electric field generated between them is changed, causing the ion beam to deflect at various angles. As a result, the ion beam can be scanned across the entire scanning range in the vertical direction (y-direction). Figure 2 In the diagram, the scanning direction and range of the ion beam are illustrated by arrow Y, and multiple trajectories of the ion beam within the scanning range are shown by dashed lines. Furthermore, the beam scanning unit 28 can be a magnetic field type instead of an electric field type. The beam scanning unit 28 may include a magnet device for deflecting the ion beam.

[0051] A beam parallelization section 30 is located downstream of the beam scanning section 28. The beam parallelization section 30 is configured such that the travel direction of the ion beam reciprocated by the beam scanning section 28 is parallel to the direction of beamline A. The beam parallelization section 30 has multiple parallelization lens electrodes 30a and 30b in an arc shape with the ion beam passing through a slit at their center in the horizontal direction (x2 direction). The parallelization lens electrodes 30a and 30b are connected to a high-voltage power supply (not shown), so that an electric field generated by applying voltage acts on the ion beam to make the ion beam's travel direction parallel. Alternatively, the beam parallelization section 30 can be a magnetic field type instead of an electric field type. The beam parallelization section 30 may also include a magnet device for deflecting the ion beam.

[0052] An acceleration / deceleration unit 32 is disposed downstream of the beam parallelization unit 30. The acceleration / deceleration unit 32 is configured to accelerate or decelerate the scanning beam parallelized by the beam parallelization unit 30. The acceleration / deceleration unit 32 is an electrostatic acceleration / deceleration device, which accelerates or decelerates the ion beam by utilizing the potential difference between a first potential applied to the upstream side of the acceleration / deceleration unit 32 and a second potential applied to the downstream side of the acceleration / deceleration unit 32.

[0053] An energy analysis unit 34 is located downstream of the acceleration / deceleration unit 32. The energy analysis unit 34 is configured to analyze the energy of the ion beam and guide ions with the desired energy into the implantation processing chamber 14. The energy analysis unit 34 selects an angle energy filter (AEF) with the desired energy based on the deflection angle θ to deflect the ion beam horizontally. The deflection angle θ is, for example, 10 degrees or more and 20 degrees or less, approximately 15 degrees. The energy analysis unit 34 includes AEF electrode pairs 34a and 34b and an energy analysis slit 34c.

[0054] AEF electrode pairs 34a and 34b are configured to face each other in a direction orthogonal to the scanning direction. AEF electrode pairs 34a and 34b are also configured to face each other in a horizontal direction (x2 or x3). AEF electrode pairs 34a and 34b are connected to a high-voltage power supply (not shown) to apply an electric field to the ion beam, thereby deflecting it. AEF electrode pairs 34a and 34b are deflection devices that deflect the scanning beam in the horizontal direction. An energy analysis slit 34c is located downstream of AEF electrode pairs 34a and 34b.

[0055] The energy analysis slit 34c has a slit shape with a long opening width in the vertical direction (y-direction) and a short opening width in the horizontal direction (x3-direction). That is, the opening width of the energy analysis slit 34c in the vertical direction is greater than the opening width in the horizontal direction. The energy analysis slit 34c allows the ion beam with the desired energy value or energy range to pass through to the treated objects W1 and W2, while blocking other ion beams.

[0056] The energy analysis unit 34 can also be a magnetic field type instead of an electric field type. The energy analysis unit 34 can be equipped with a magnet device for magnetic field deflection. The energy analysis unit 34 can also utilize both electric and magnetic fields, and can also be equipped with an AEF electrode pair for electric field deflection and a magnet device for magnetic field deflection.

[0057] Thus, the beam generating device 12 supplies the ion beam to be irradiated onto the objects W1 and W2 to the injection processing chamber 14. The beam generating device 12 can also be referred to as a beamline device. The beam generating device 12 is configured to generate an ion beam to achieve the desired injection conditions by adjusting the operating parameters of the various machines constituting the beam generating device 12.

[0058] The injection processing chamber 14 is equipped with a plasma shower device 36, a beam blocker 38, a first holding device 40, and a second holding device 42.

[0059] The plasma shower device 36 is located downstream of the energy analysis unit 34. The plasma shower device 36 supplies low-energy electrons to the ion beam and the surfaces (treated surfaces) of the objects W1 and W2 according to the beam current of the ion beam, suppressing charging caused by the accumulation of positive charges on the treated surfaces due to ion implantation. The plasma shower device 36 includes, for example, a shower tube 36a through which the ion beam passes and a plasma generating unit 36b that supplies electrons into the shower tube 36a. The shower tube 36a has a shape with a long opening width in the vertical direction (y-direction) and a short opening width in the horizontal direction (x3-direction).

[0060] A beam blocker 38 is located at the downstream end of beamline A, for example, mounted on the side wall of the injection processing chamber 14. When no objects W1 or W2 are present on beamline A, the ion beam is incident on the beam blocker 38. Multiple tuning cups 38a, 38b, 38c, and 38d are provided on the beam blocker 38. These tuning cups 38a to 38d are Faraday cups configured to measure the beam current of the ion beam incident on the beam blocker 38. The tuning cups 38a to 38d are arranged at intervals, for example, in the vertical direction (y-direction).

[0061] The first holding device 40 is configured to hold the first processed object W1, which is the object to be injected. The first holding device 40 is configured to reciprocate the first processed object W1 held by the first holding device 40 in the direction traversing the scanning beam. The first holding device 40 is configured to reciprocate the first processed object W1 in the horizontal direction (x3 direction). The first holding device 40 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0062] The first holding device 40 includes a first clamping mechanism 50, a first torsion mechanism 52, a first vertical angle adjustment mechanism 54, a first horizontal angle adjustment mechanism 56, and a first reciprocating motion mechanism 58.

[0063] The first clamping mechanism 50 is configured to hold the first workpiece W1 by contacting its back side. The first clamping mechanism 50 may include, for example, an electrostatic clamp for holding the first workpiece W1. The first clamping mechanism 50 may also include a temperature adjustment mechanism for cooling or heating the first workpiece W1. The first clamping mechanism 50 includes a first lifting mechanism for lifting the first workpiece W1 to move it away from the first clamping mechanism 50.

[0064] The first torsion mechanism 52 rotatably supports the first clamping mechanism 50. The first torsion mechanism 52 causes the first clamping mechanism 50 to rotate about a rotation axis (also called a torsion axis) extending along the normal direction of the processed surface of the first workpiece W1 held by the first clamping mechanism 50, to adjust the torsion angle φa1 of the first workpiece W1. The first torsion mechanism 52, for example, adjusts the torsion angle φa1 between an alignment mark provided on the outer periphery of the first workpiece W1 and a reference position. Here, the alignment mark of the first workpiece W1 refers, for example, to a notch or orientation flat provided on the outer periphery of the wafer, and is a mark that serves as a reference for the angular position in the wafer's crystal axis direction or circumferential direction.

[0065] The first vertical angle adjustment mechanism 54 rotatably supports the first torsion mechanism 52. The first vertical angle adjustment mechanism 54 causes the first torsion mechanism 52 to rotate about a rotation axis (also called a transport tilt axis) extending in the horizontal direction to adjust the orientation of the first processed object W1 in the vertical direction. The orientation of the first processed object W1 in the vertical direction can be defined by the vertical rotation angle φb1 about the horizontal rotation axis.

[0066] The first horizontal angle adjustment mechanism 56 rotatably supports the first vertical angle adjustment mechanism 54. The first horizontal angle adjustment mechanism 56 causes the first vertical angle adjustment mechanism 54 to rotate about a rotation axis (also called an injection tilt axis) extending along the vertical direction to adjust the orientation of the first processed object W1 in the horizontal direction. The orientation of the first processed object W1 in the horizontal direction is defined by the horizontal rotation angle φc1 about the vertical rotation axis.

[0067] The first reciprocating motion mechanism 58 is configured to move the first horizontal angle adjustment mechanism 56 in the horizontal direction (x3 direction). The first reciprocating motion mechanism 58 moves the first horizontal angle adjustment mechanism 56 along the guide rail 44. The first reciprocating motion mechanism 58 includes, for example, a first ball screw 58a extending along the guide rail 44 in the horizontal direction (x3 direction). The first reciprocating motion mechanism 58 causes the first horizontal angle adjustment mechanism 56 to move linearly in the horizontal direction by rotating the first ball screw 58a.

[0068] The second holding device 42 is configured to hold the second object to be processed, W2, which is the target of the injection process. The second holding device 42 is configured to reciprocate the second object to be processed, W2, held by the second holding device 42, in the direction traversing the scanning beam. The second holding device 42 is configured to reciprocate the second object to be processed, W2, in the horizontal direction (x3 direction). The second holding device 42 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0069] The second holding device 42 can have the same structure as the first holding device 40. The second holding device 42 can move in the same direction as the first holding device 40. The second holding device 42 can move along the same guide rail 44 as the first holding device 40. Alternatively, the second holding device 42 can be configured to move along a different guide rail than the first holding device 40. That is, the injection processing chamber 14 can be provided with a first guide rail for the movement of the first holding device 40 and a second guide rail for the movement of the second holding device 42. The second holding device 42 can move simultaneously with the first holding device 40. The second holding device 42 can also move independently of the first holding device 40.

[0070] The second holding device 42 includes a second clamping mechanism 60, a second torsion mechanism 62, a second vertical angle adjustment mechanism 64, a second horizontal angle adjustment mechanism 66, and a second reciprocating motion mechanism 68.

[0071] The second clamping mechanism 60 is configured to hold the second workpiece W2 by contacting its back side. The second clamping mechanism 60 may include, for example, an electrostatic clamp for holding the second workpiece W2. The second clamping mechanism 60 may also include a temperature adjustment mechanism for cooling or heating the second workpiece W2. The second clamping mechanism 60 includes a second lifting mechanism for lifting the second workpiece W2 to move it away from the second clamping mechanism 60.

[0072] The second torsion mechanism 62 rotatably supports the second clamping mechanism 60. The second torsion mechanism 62 rotates the second clamping mechanism 60 about a rotation axis (also called a torsion axis) extending along the normal direction of the processed surface of the second workpiece W2 held by the second clamping mechanism 60, thereby adjusting the torsion angle φa2 of the second workpiece W2. For example, the second torsion mechanism 62 adjusts the torsion angle φa2 between an alignment mark provided on the outer periphery of the second workpiece W2 and a reference position.

[0073] The second vertical angle adjustment mechanism 64 rotatably supports the second torsion mechanism 62. The second vertical angle adjustment mechanism 64 causes the second torsion mechanism 62 to rotate about a rotation axis extending in the horizontal direction (also called a transport tilt axis) to adjust the orientation of the second workpiece W2 in the vertical direction. The orientation of the second workpiece W2 in the vertical direction can be defined by the vertical rotation angle φb2 about the horizontal rotation axis.

[0074] The second horizontal angle adjustment mechanism 66 rotatably supports the second vertical angle adjustment mechanism 64. The second horizontal angle adjustment mechanism 66 causes the second vertical angle adjustment mechanism 64 to rotate about a rotation axis (also called an injection tilt axis) extending along the vertical direction, so as to adjust the orientation of the second processed object W2 in the horizontal direction. The orientation of the second processed object W2 in the horizontal direction is defined by the horizontal rotation angle φc2 about the vertical rotation axis.

[0075] The second reciprocating motion mechanism 68 is configured to move the second horizontal angle adjustment mechanism 66 in the horizontal direction (x3 direction). The second reciprocating motion mechanism 68 moves the second horizontal angle adjustment mechanism 66 along the guide rail 44. The second reciprocating motion mechanism 68 includes, for example, a second ball screw 68a extending in the horizontal direction (x3 direction) along the guide rail 44, and the second horizontal angle adjustment mechanism 66 moves linearly in the horizontal direction by rotating the second ball screw 68a.

[0076] The conveying device 16 includes a first conveying device 70 and a second conveying device 72. The first conveying device 70 and the second conveying device 72 are arranged separately from the cable bundle A in the horizontal direction (x3 direction). Figure 1 In the example, the first transport device 70 is configured separately from the beam A in the -x3 direction, and the second transport device 72 is configured separately from the beam A in the +x3 direction. The first transport device 70 and the second transport device 72 are configured, for example, such that a beam blocker 38 is located between the first transport device 70 and the second transport device 72.

[0077] The first transport device 70 is configured to transport the first processed object W1 before injection processing into the injection processing chamber 14, and to remove the first processed object W1 after injection processing from the injection processing chamber 14. The first transport device 70 transports the first processed object W1 onto the first holding device 40, and removes the first processed object W1 from the first holding device 40. The first transport device 70 may include, for example, a first transport robot (not shown) for transporting the first processed object W1. The first transport device 70 transports the first processed object W1 via a first transport port 74 provided on the side wall of the injection processing chamber 14.

[0078] The second transport device 72 is configured to transport the second processed object W2 before injection processing into the injection processing chamber 14, and to remove the second processed object W2 after injection processing from the injection processing chamber 14. The second transport device 72 transports the second processed object W2 onto the second holding device 42, and removes the second processed object W2 from the second holding device 42. The second transport device 72 may include, for example, a second transport robot (not shown) for transporting the second processed object W2. The second transport device 72 transports the second processed object W2 via a second transport port 76 provided on the side wall of the injection processing chamber 14.

[0079] The control device 18 controls all operations of the ion implantation device 10. The control device 18 is implemented in hardware by components or mechanical devices, such as a computer's CPU or memory, and in software by computer programs. The various functions provided by the control device 18 can be achieved through the cooperation of hardware and software.

[0080] The control device 18 includes a processor 18a such as a CPU (Central Processing Unit) and a memory 18b such as ROM (Read Only Memory) or RAM (Random Access Memory). For example, the control device 18 executes a program stored in the memory 18b via the processor 18a, controlling all operations of the ion implantation device 10 according to the program. The processor 18a can also execute a program stored in any storage device different from the memory 18b, a program obtained from any storage medium via a reading device, or a program obtained via a network. The memory 18b storing the program can be a volatile memory such as DRAM (Dynamic Random Access Memory), or a non-volatile memory such as EEPROM (Electrically Erasable Programmable Read-Only Memory), flash memory, magnetoresistive memory, resistive alternating current memory, or ferroelectric memory. Magnetic storage media such as non-volatile memory, magnetic tape and magnetic disk, and optical storage media such as optical disk are examples of non-transitory and tangible computer-readable storage media.

[0081] The various functions provided by the control device 18 can be implemented by a single device having a processor 18a and a memory 18b, or by the cooperation of multiple devices each having a processor 18a and a memory 18b.

[0082] Figure 3 This is a front view showing the schematic structure of the first holding device 40 and the second holding device 42, indicating the structure as viewed along the beam travel direction (z3 direction) in the injection processing chamber 14. Figure 3In this configuration, a first holding device 40 is disposed at a first transport position 80, and a second holding device 42 is disposed at a second transport position 82. The first transport position 80 is used to transfer a first workpiece W1 onto or from the first holding device 40 via a first transport port 74. The first transport position 80 corresponds to the position of the first transport port 74. The second transport position 82 is used to transfer a second workpiece W2 onto or from the second holding device 42 via a second transport port 76. The second transport position 82 corresponds to the position of the second transport port 76. The first transport position 80 and the second transport position 82 are horizontally (x3 direction) away from the injection position 84 used for irradiating the workpieces W1 and W2 with an ion beam.

[0083] The injection position 84 is located at the center of the injection processing chamber 14 in the horizontal direction (x3 direction). The injection position 84 is located between the first transport position 80 and the second transport position 82. The injection position 84 includes a central injection position 84C, a left injection position 84L, and a right injection position 84R. Figure 3 In the diagram, double-dotted lines indicate the treated materials WC, WL, and WR located at the injection center position 84C, the injection left end position 84L, and the injection right end position 84R, respectively. The injection center position 84C corresponds to the position irradiated by the scanning beam SB generated by the beam generating device 12. The injection left end position 84L is oriented to the left (…). Figure 3 The +x3 direction) is offset from the injection center position 84C, and the entire treated surface of the workpiece WL positioned at the left injection position 84L is set so that it does not overlap with the scanning beam SB. The injection right position 84R is to the right ( Figure 3 The position of the object to be processed (in the -x3 direction) is offset from the injection center position 84C, and the entire surface of the object to be processed (WR) configured at the injection right end position 84R is set so that it does not overlap with the scanning beam SB.

[0084] The size h of the irradiation range of the scanning beam SB in the vertical direction (y direction). B The dimension h in the vertical direction (y direction) of the surface to be processed of the processed objects W1 and W2 is larger than that of the processed objects. W The vertical dimension h of the scanning beam SB. B For example, the vertical dimension h of the surface to be processed of objects W1 and W2. W The ratio is more than 1.1 times and less than 3 times, preferably more than 1.2 times and less than 2 times.

[0085] The first holding device 40 reciprocates in the horizontal direction (x3 direction) at the injection position 84, causing the scanning beam SB to irradiate the entire surface of the first workpiece W1. The first holding device 40 also reciprocates within a range C from the left injection position 84L to the right injection position 84R, causing the scanning beam SB to irradiate the entire surface of the first workpiece W1. The first holding device 40 can move in or out of the first workpiece W1 by moving to the first transport position 80. The first holding device 40 is movable between the injection position 84 and the first transport position 80. The first holding device 40 is movable within a first movable range E1 from the first transport position 80 to the left injection position 84L. The first holding device 40 cannot move to the second transport position 82.

[0086] The second holding device 42, by reciprocating in the horizontal direction (x3 direction) at the injection position 84, irradiates the entire surface of the second workpiece W2 with the scanning beam SB. The second holding device 42, by reciprocating within a movement range C from the left injection position 84L to the right injection position 84R, irradiates the entire surface of the second workpiece W2 with the scanning beam SB. The second holding device 42 can move in or out of the second workpiece W2 by moving to the second transport position 82. The second holding device 42 is movable between the injection position 84 and the second transport position 82. The second holding device 42 is movable within a second movable range E2 from the second transport position 82 to the right injection position 84R. The second holding device 42 cannot move to the first transport position 80.

[0087] The first injection position for irradiating the first workpiece W1 held by the first holding device 40 with the ion beam is the same as the second injection position for irradiating the second workpiece W2 held by the second holding device 42 with the ion beam. That is, the first injection position and the second injection position coincide with a common injection position 84. Furthermore, the first movement range of the first holding device 40 reciprocating the first workpiece W1 at the first injection position is the same as the second movement range of the second holding device 42 reciprocating the second workpiece W2 at the second injection position. That is, the first movement range and the second movement range coincide with a common movement range C. When viewed along the beam travel direction, the first movement range and the second movement range overlap. The vertical position of the first workpiece W1 held by the first holding device 40 at the first injection position is the same vertical position of the second workpiece W2 held by the second holding device 42 at the second injection position. The position of the first processed object W1, held by the first holding device 40 at the first injection position, in the beam travel direction is the same as the position of the second processed object W2, held by the second holding device 42 at the second injection position, in the beam travel direction. Therefore, the first holding device 40 and the second holding device 42 are configured to allow the first processed object W1 and the second processed object W2 to reciprocate in the same way relative to the scanning beam SB. Thus, the first processed object W1 and the second processed object W2 are irradiated by the scanning beam SB under the same injection environment.

[0088] Figure 4 Figures (a) and (b) are top views schematically showing the orientation of the first processed object W1 held by the first holding device 40 in the horizontal direction. Figure 4 Figures (a) and (b) show the change in the horizontal direction of the first processed object W1 caused by the first horizontal angle adjustment mechanism 56. The same applies to the horizontal direction of the second processed object W2 held by the second holding device 42.

[0089] Figure 4 Figures (a) and (b) show the orientation of the first processed object W1 in the injection process of irradiating the first processed object W1 with the scanning beam SB. Figure 4 Figure (a) shows the case where the surface of the first object W1 being processed is orthogonal to the direction of travel (z3 direction) of the scanning beam SB. Figure 4 Figure (b) shows the case where the surface of the first object W1 being processed intersects obliquely with the travel direction (z3 direction) of the scanning beam SB. Figure 4In Figure (b), the treated surface of the first treated object W1 has a horizontal tilt angle α1 relative to the travel direction (z3 direction) of the scanning beam SB. The horizontal tilt angle α1 represents the inclination of the incident direction of the scanning beam SB relative to the normal of the treated surface of the first treated object W1 in the horizontal direction. The first holding device 40 can adjust the horizontal tilt angle α1 of the first treated object W1 by driving the first horizontal angle adjustment mechanism 56 to adjust the horizontal rotation angle φc1. The first holding device 40 is configured to adjust the horizontal tilt angle α1 within a range of ±30 degrees or ±60 degrees during ion implantation.

[0090] Figure 5 Figures (a) to (c) are side views schematically showing the orientation of the first processed object W1 held by the first holding device 40 in the vertical direction. Figure 5 Figures (a) to (c) show the change in the vertical direction of the first processed object W1 caused by the first vertical angle adjustment mechanism 54. The same applies to the vertical direction of the second processed object W2 held by the second holding device 42.

[0091] Figure 5 Figure (a) shows an example of the direction of the first processed object W1 in the injection process of irradiating the first processed object W1 with the scanning beam SB. Figure 5 In Figure (a), the first holding device 40 holds the first workpiece W1 such that the surface to be processed on the first workpiece W1 is orthogonal to the travel direction (z3 direction) of the scanning beam SB. That is, the first holding device 40 holds the first workpiece W1 such that the surface to be processed on the first workpiece W1 is not in the horizontal direction. Figure 5 In the example of Figure (a), the first holding device 40 holds the first processed object W1 with the processed surface of the first processed object W1 in the vertical direction.

[0092] Figure 5 Figure (b) shows another example of the direction of the first processed object W1 in the injection process of irradiating the first processed object W1 with the scanning beam SB. Figure 5 In Figure (b), the first holding device 40 holds the first workpiece W1 in a direction in which the surface to be processed is inclined relative to the vertical direction. Figure 5 In Figure (b), the first holding device 40 holds the first workpiece W1 with the treated surface not along the horizontal direction. Figure 5In Figure (b), the treated surface of the first workpiece W1 has a vertical tilt angle β1 relative to the travel direction (z3 direction) of the scanning beam SB. The vertical tilt angle β1 represents the inclination of the incident direction of the scanning beam SB relative to the normal of the treated surface of the first workpiece W1 in the vertical direction. The first holding device 40 can adjust the vertical tilt angle β1 by driving the first vertical angle adjustment mechanism 54 to adjust the vertical rotation angle φb1. The first holding device 40 is configured to adjust the vertical tilt angle β1 within, for example, a range of ±30 degrees or ±60 degrees during ion implantation.

[0093] Figure 5 Figure (c) shows the orientation of the first workpiece W1 in a transport process where the first workpiece W1 is moved onto or removed from the first holding device 40. Figure 5 In Figure (c), the first holding device 40 holds the first workpiece W1 with the processed surface of the first workpiece W1 in a horizontal direction. Figure 5 In Figure (c), the first holding device 40 uses the first lifting mechanism 50a to lift the first workpiece W1, moving it away from the first clamping mechanism 50. This allows the robotic arm of the first handling robot, used for loading or unloading the first workpiece W1, to be inserted into the gap 50b between the first clamping mechanism 50 and the first workpiece W1. Alternatively, the robotic arm of the first handling robot does not necessarily have to be inserted into the gap 50b between the first clamping mechanism 50 and the first workpiece W1. The robotic arm of the first handling robot can also be configured to support the outer periphery of the first workpiece W1, rather than its back side. In this case, the gap 50b can be very small.

[0094] Figures 6-9 This is a front view illustrating an example of the operation of the first holding device 40 and the second holding device 42. Figure 6 This indicates the status of the first injection process performed on the first processed object W1. Figure 6 In this configuration, a first holding device 40 is positioned at the injection position 84, and a second holding device 42 is positioned at the second transport position 82. The first holding device 40 reciprocates horizontally at the injection position 84 as indicated by arrow X to perform injection processing on the first workpiece W1. The second holding device 42, at the second transport position 82, uses a second lifting mechanism 60a to lift the second workpiece W2, and then removes the injected workpiece W2 through the second transport port 76. The second holding device 42, at the second transport position 82, uses the second lifting mechanism 60a to receive the second workpiece W2, and then receives the workpiece W2 before injection processing through the second transport port 76.

[0095] exist Figure 6In this configuration, the first holding device 40 holds the first workpiece W1 in a direction such that the scanning beam SB irradiates the surface of the first workpiece W1 to be processed. For example, as... Figure 4 As shown in Figure (a), the first holding device 40 holds the first processed object W1 with a horizontal tilt angle α1 of 0. For example, as Figure 5 As shown in Figure (a), the first holding device 40 holds the first processed object W1 in a direction where the vertical tilt angle β1 is 0. Figure 4 As shown in Figure (b), the first holding device 40 can also hold the first processed object W1 in a direction where the horizontal tilt angle α1 is not 0. Figure 5 As shown in Figure (b), the first holding device 40 can also hold the first processed object W1 in a direction in which the vertical tilt angle β1 is not 0. The first holding device 40 can also hold the first processed object W1 in a direction in which neither the horizontal tilt angle α1 nor the vertical tilt angle β1 is 0.

[0096] exist Figure 6 In this configuration, the second holding device 42 holds the second processed object W2 in an orientation that allows it to be moved in or out through the second conveying port 76. Figure 5 Similar to Figure (c), the second holding device 42 holds the second workpiece W2 with the treated surface of the second workpiece W2 in a horizontal direction. The second holding device 42 uses the second lifting mechanism 60a to lift the second workpiece W2, forming a gap 60b between the second clamping mechanism 60 and the second workpiece W2. The second transport device 72 removes the injected second workpiece W2 by inserting the robotic arm of the second transport robot into the gap 60b between the second clamping mechanism 60 and the second workpiece W2. When the second workpiece W2 before injection treatment has been placed on the second lifting mechanism 60a using the robotic arm of the second transport robot, the second holding device 42 releases the lifting of the second workpiece W2 and holds the second workpiece W2 in the second clamping mechanism 60. After holding the second workpiece W2 before injection treatment, the second holding device 42 drives the second vertical angle adjustment mechanism 64 to change the vertical rotation angle φb2, so that the treated surface of the second workpiece W2 is not along the horizontal direction.

[0097] Figure 7 This indicates a switch from the first injection process for the first processed object W1 to the second injection process for the second processed object W2. In other words, it indicates the end of the first injection process for the first processed object W1 and the start of the second injection process for the second processed object W2. Figure 7In this process, the first holding device 40 moves from the injection position 84 toward the first transport position 80 as indicated by arrow F1, and the second holding device 42 moves from the second transport position 82 toward the injection position 84 as indicated by arrow F2. Figure 7 As shown, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required to switch from the first injection process to the second injection process can be shortened.

[0098] exist Figure 7 In this process, the first holding device 40 and the second holding device 42 can be moved in a manner that maintains the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, by making the moving speeds of the first holding device 40 and the second holding device 42 the same, the relative distance d can be kept constant. Alternatively, the moving speeds of the first holding device 40 and the second holding device 42 can be adjusted to maintain the relative distance d within a range from a predetermined upper limit to a lower limit. In this case, the moving speed of the first holding device 40 can be faster or slower than the moving speed of the second holding device 42. In the case of ion implantation that provides a uniform dose distribution to the workpiece in the horizontal direction, it is preferable that the relative distance d be as small as possible. In the case of ion implantation that provides a non-uniform dose distribution to the workpiece in the horizontal direction, it is preferable that the relative distance d be larger than the dimension in the horizontal direction (x3 direction) of the scanning beam SB.

[0099] exist Figure 7 In this process, the moving speed of the first holding device 40 holding the first workpiece W1, which is about to complete the injection process, can be the maximum speed that the first holding device 40 can adopt. By moving the first holding device 40 at its maximum speed, the time required from completing the first injection process for the first workpiece W1 to removing the first workpiece W1 can be shortened, thereby improving production efficiency. On the other hand, the moving speed of the second holding device 42 holding the second workpiece W2, which is about to begin the injection process, can be determined according to the injection conditions of the second workpiece W2. By moving the second holding device 42 at a moving speed corresponding to the injection conditions, the second injection process for the second workpiece W2 can begin at the same moving speed after the second workpiece W2 has moved to the injection position 84. As a result, the second injection process can be started earlier, thereby improving production efficiency.

[0100] Figure 8 This indicates the status of the second injection process performed on the second processed object W2. Figure 8In this configuration, a second holding device 42 is positioned at the injection position 84, and a first holding device 40 is positioned at the first transport position 80. The second holding device 42 reciprocates horizontally at the injection position 84 as indicated by arrow X to perform injection processing on the second workpiece W2. The first holding device 40, at the first transport position 80, uses a first lifting mechanism 50a to lift the first workpiece W1, after injection processing, and removes it through the first transport port 74. The first holding device 40, at the first transport position 80, uses the first lifting mechanism 50a to receive the first workpiece W1, before injection processing, and loads it into the first transport port 74.

[0101] exist Figure 8 In this configuration, the second holding device 42 holds the second workpiece W2 in an orientation such that the scanning beam SB irradiates the surface of the second workpiece W2 being processed. For example, with... Figure 4 Similar to Figure (a), the second holding device 42 holds the second processed object W2 with a horizontal tilt angle α2 of 0. For example, with Figure 5 Similar to Figure (a), the second holding device 42 holds the second processed object W2 with a vertical tilt angle β2 of 0. Figure 4 Similar to Figure (b), the second holding device 42 can also hold the second processed object W2 in an orientation where the horizontal tilt angle α2 is not 0. Figure 5 Similarly to Figure (b), the second holding device 42 can also hold the second processed object W2 in an orientation in which the vertical tilt angle β2 is not 0. The second holding device 42 can also hold the second processed object W2 in an orientation in which both the horizontal tilt angle α2 and the vertical tilt angle β2 are not 0.

[0102] exist Figure 8 In this configuration, the first holding device 40 holds the first processed object W1 in an orientation that allows it to be moved in or out through the first conveying port 74. For example... Figure 5As shown in Figure (c), the first holding device 40 holds the first workpiece W1 with the treated surface of the first workpiece W1 facing horizontally. The first holding device 40 lifts the first workpiece W1 using the first lifting mechanism 50a, forming a gap 50b between the first clamping mechanism 50 and the first workpiece W1. The first transport device 70 removes the first workpiece W1 after injection treatment by inserting the robotic arm of the first transport robot into the gap 50b between the first clamping mechanism 50 and the first workpiece W1. When the first workpiece W1 before injection treatment has been placed on the first lifting mechanism 50a using the robotic arm of the first transport robot, the first holding device 40 releases the lifting of the first workpiece W1 and holds the first workpiece W1 in the first clamping mechanism 50. After holding the first workpiece W1 before injection treatment, the first holding device 40 drives the first vertical angle adjustment mechanism 54 to change the vertical rotation angle φb1 so that the treated surface of the first workpiece W1 is not aligned with the horizontal direction.

[0103] Figure 9 This indicates a switch from the second injection process for the second processed object W2 to the first injection process for the first processed object W1. In other words, it indicates the end of the second injection process for the second processed object W2 and the beginning of the first injection process for the first processed object W1. Figure 9 In this process, the first holding device 40 moves from the first transport position 80 toward the injection position 84 as indicated by arrow F3, and the second holding device 42 moves from the injection position 84 toward the second transport position 82 as indicated by arrow F4. Figure 9 As shown, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required to switch from the second injection process to the first injection process can be shortened.

[0104] exist Figure 9 In this configuration, the first holding device 40 and the second holding device 42 can be moved in a manner that maintains the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, by making the moving speeds of the first holding device 40 and the second holding device 42 the same, the relative distance d can be kept constant. Alternatively, the moving speeds of the first holding device 40 and the second holding device 42 can be adjusted to maintain the relative distance d within a range from a predetermined upper limit to a lower limit. In this case, the moving speed of the first holding device 40 can be faster or slower than the moving speed of the second holding device 42. The relative distance d is preferably greater than the dimension in the horizontal direction (x3 direction) of the scanning beam SB.

[0105] exist Figure 9In this process, the moving speed of the second holding device 42, which holds the second workpiece W2 at the end of the injection process, can be the maximum speed that the second holding device 42 can adopt. By moving the second holding device 42 at its maximum speed, the time required from completing the second injection process for the second workpiece W2 to removing the second workpiece W2 can be shortened, thereby improving production efficiency. On the other hand, the moving speed of the first holding device 40, which holds the first workpiece W1 at the beginning of the injection process, can be determined according to the injection conditions of the first workpiece W1. By moving the first holding device 40 at a moving speed corresponding to the injection conditions, the first injection process for the first workpiece W1 can begin at the same moving speed after the first workpiece W1 has moved to the injection position 84. Thus, the first injection process can be started earlier, thereby improving production efficiency.

[0106] Figure 10 This is a flowchart illustrating the process of the ion implantation method according to the embodiment. First, a first workpiece W1 before implantation is placed onto a first holding device 40 (S10). In S10, the first workpiece W1 before implantation can be placed onto the first holding device 40 after the first workpiece W1 held by the first holding device 40 has been removed. Next, a second holding device 42 is moved to a second transport position 82 (S12), and a first holding device 40 is moved to a first implantation position (e.g., implantation position 84) (S14). S12 and S14 can be performed simultaneously, and can be performed in such a way that the execution periods of S12 and S14 at least partially overlap. Next, by reciprocating the first holding device 40 at the first implantation position, the reciprocating first workpiece W1 is irradiated with an ion beam (S16).

[0107] Before, during, or after S16, the second workpiece W2 before implantation is moved onto the second holding device 42 (S18). In S18, the second workpiece W2 before implantation can be moved onto the second holding device 42 after the implanted second workpiece W2 held by the second holding device 42 has been removed. Next, the first holding device 40 is moved to the first transport position 80 (S20), and the second holding device 42 is moved to the second implantation position (e.g., implantation position 84) (S22). S20 and S22 can be performed simultaneously, and can be performed in such a way that the execution periods of S20 and S22 overlap at least partially. Next, by reciprocating the second holding device 42 at the second implantation position, the reciprocating second workpiece W2 is irradiated with an ion beam (S24).

[0108] Figure 10The illustrated process can be repeated. For example, the processing of S10 after repeated execution can be performed before, during, or after S24. The first processed object W1, held by the first holding device 40, after injection treatment, can be removed before, during, or after S24, and the first processed object W1 before injection treatment can be moved onto the first holding device 40. This can be achieved through repeated execution. Figure 10 The process shown can repeatedly and alternately perform the first injection step for the first workpiece W1 held by the first holding device 40 and the second injection step for the second workpiece W2 held by the second holding device 42. Figure 10 The process shown can be repeated until the injection process for multiple substances to be processed continuously is completed.

[0109] According to this embodiment, by providing multiple holding devices within the injection processing chamber 14, the injection process and the transport process of the processed items can be performed in parallel. For example, the transport process of the second processed item W2 can be performed simultaneously with the first injection process for the first processed item W1 held by the first holding device 40 using the second holding device 42. Furthermore, the transport process of the first processed item W1 can be performed simultaneously with the second injection process for the second processed item W2 held by the second holding device 42 using the first holding device 40. As a result, compared to using a single holding device to alternately perform the injection process and the transport process, the time required for continuous processing of multiple processed items can be shortened, thereby improving production efficiency.

[0110] According to this embodiment, by configuring a structure in which multiple holding devices reciprocate in the horizontal direction, the complexity of the structure of the implantation processing chamber 14 and the transport device 16 can be suppressed compared to a structure in which multiple holding devices reciprocate in the vertical direction. Furthermore, by configuring a structure in which multiple holding devices reciprocate in the horizontal direction, the dimensions of the implantation processing chamber 14 and the transport device 16 in the vertical direction can be suppressed. As a result, an ion implantation apparatus 10 with dimensions within the height limitations of a typical semiconductor manufacturing plant floor can be provided.

[0111] According to this embodiment, by configuring multiple holding devices to move along a common guide rail 44, the reciprocating movements of each of the multiple holding devices at the injection position can be made identical. As a result, differences in the injection environment can be prevented by using multiple holding devices. Consequently, deviations in the injection processing for multiple processed items can be suppressed, while improving the production efficiency of the injection processing for multiple processed items.

[0112] According to this embodiment, by reciprocating the ion beam in the vertical direction and moving the workpiece back and forth in the horizontal direction, the entire surface of the workpiece can be efficiently irradiated with the scanning beam. Furthermore, by deflecting the ion beam in the horizontal direction at the mass spectrometry unit 24 and the energy analysis unit 34, a beamline A traveling along the horizontal plane can be formed, thereby suppressing the vertical dimension of the beam generation apparatus 12.

[0113] According to this embodiment, by setting the front slit 20c of the ion source 20 to a slit shape that is long in the horizontal direction, an ion beam that diffuses horizontally via the extraction portion 22 can be generated. As a result, compared to the case where a point-like ion beam is extracted from the ion source 20, it is easier to generate an ion beam with a larger beam current. Furthermore, since the vertical dimension of the ion beam extracted from the ion source 20 is small, the spacing between the opposing magnetic poles of the mass spectrometry magnet device 24a through which the ion beam passes can be reduced. As a result, the size of the mass spectrometry magnet device 24a can be suppressed. For example, compared to a comparative example where the front slit of the ion source is set to a slit shape that is narrow in the horizontal direction and long in the vertical direction, the size of the mass spectrometry magnet device 24a can be suppressed while generating an ion beam with a larger beam current.

[0114] According to this embodiment, by using the beam shaping unit 26 to shape the horizontally diffused ion beam into a dot shape, a dot beam suitable for vertical beam scanning by the beam scanning unit 28 can be formed. By using the beam scanning unit 28 to scan the dot beam in the vertical direction, ions can be implanted into large-sized workpieces in the vertical direction. According to this embodiment, a scanning beam with a larger beam current can be irradiated into large-sized workpieces in the vertical direction, thus improving the production efficiency of the implantation process.

[0115] In this embodiment, the application direction of the magnetic field B1 at the ion source 20 is orthogonal to the application direction of the magnetic field B2 at the mass spectrometer analysis unit 24. Therefore, the possibility of adverse effects on beam quality and magnetic field control due to mutual interference between the two increases. On the other hand, in the comparative example where the application direction of the magnetic field at the ion source is vertical, the application direction of the magnetic field at the ion source is parallel to the application direction of the magnetic field at the mass spectrometer analysis unit. Therefore, even if there is slight interference between the two magnetic fields, it will not be a major problem. According to this embodiment, by providing a magnetic shield 23 between the extraction part 22 and the mass spectrometer analysis unit 24, magnetic field interference between the horizontal magnetic field B1 applied to the ion source 20 and the vertical magnetic field B2 applied to the mass spectrometer analysis unit 24 can be suppressed. As a result, both the plasma generation efficiency at the ion source 20 and the mass spectrometer analysis accuracy of the mass spectrometer analysis unit 24 can be achieved.

[0116] This embodiment is applicable to ion implantation processing of large-sized objects in the vertical direction. An example of a large-sized object in the vertical direction is a large substrate used in the manufacture of flat panel displays (FPDs). The dimensions of such a large substrate in both the vertical and horizontal directions are, for example, 1m × 2m or more. It is impractical to move such a large object back and forth in the vertical direction. According to this embodiment, the object is moved back and forth in the horizontal direction, thus making the reciprocating movement of the large substrate easier than moving it back and forth in the vertical direction. Ion implantation processing can be performed on the large substrate by irradiating it with a scanning beam that scans in the vertical direction while it is moving back and forth in the horizontal direction.

[0117] When the substrate being processed is a large substrate for an FPD (Flexible Printed Device), the ion implantation apparatus 10 may not include at least one of the beam parallelization section 30, acceleration / deceleration section 32, and energy analysis section 34. When the substrate being processed is a large substrate for an FPD, the implantation chamber 14 can be moved horizontally to move the substrate into and out of the chamber. For example, the large substrate before implantation can be moved into the implantation chamber 14 from the right (or left) side, and the large substrate can be moved left (or right) within the chamber to perform ion implantation. The large substrate after implantation can then be removed from the left (or right) side of the chamber. Thus, the ion implantation apparatus 10 can perform continuous online processing of large substrates.

[0118] Figure 11 This is a flowchart illustrating the ion implantation method involved in the modified example. Figure 11 In the process, the first injection step for the first processed object W1 and the second injection step for the second processed object W2 are performed in parallel.

[0119] First, the first workpiece W1 before injection processing is moved onto the first holding device 40 (S30). In S30, the first workpiece W1 before injection processing can be moved onto the first holding device 40 after the first workpiece W1 after injection processing has been moved out of the first holding device 40. Then, the second workpiece W2 before injection processing is moved onto the second holding device 42 (S32). In S32, the second workpiece W2 before injection processing can be moved onto the second holding device 42 after the second workpiece W2 after injection processing has been moved out of the second holding device 42. The order of steps S30 and S32 is not important; S32 can start after S30 or after S32. Steps S30 and S32 can also be performed simultaneously.

[0120] Next, the first holding device 40 is moved to a first injection position (e.g., injection position 84) (S34). The first treated object W1 is irradiated with an ion beam by reciprocating the first holding device 40 at the first injection position (S36). The number of reciprocations of the first treated object W1 in S36 is not particularly limited; for example, it can be only one reciprocation. Afterward, the first holding device 40 is retracted from the first injection position (S38), and the second holding device 42 is moved to a second injection position (e.g., injection position 84) (S40). The first retraction position for retracting the first holding device 40 is, for example, located between the first transport position 80 and the first injection position. The first retraction position for retracting the first holding device 40 can also be the same as the first transport position 80.

[0121] Next, by reciprocating the second holding device 42 at the second injection position, the reciprocating second processed object W2 is irradiated with an ion beam (S42). The number of reciprocations of the second processed object W2 in S42 is not particularly limited; for example, it can be only one reciprocation. Afterward, the second holding device 42 is retracted from the second injection position (S44). The second retraction position for retracting the second holding device 42 is, for example, located between the second transport position 82 and the second injection position. The second retraction position for retracting the second holding device 42 can also be the same as the second transport position 82.

[0122] If the implantation process for the first processed object W1 and the second processed object W2 has not yet been completed (No in S46), then steps S34 to S44 are repeated until the implantation process is completed. For example, if the number of reciprocating movements required to complete the implantation process for the first processed object W1 and the second processed object W2 is three (i.e., three reciprocations), then steps S34 to S44 are repeated three times. At this time, the steps of irradiating the first processed object W1 with the ion beam once and the steps of irradiating the second processed object W2 with the ion beam once are performed alternately. At this time, the relative distance d between the first processed object W1 and the second processed object W2 can be minimized as much as possible to perform S38 and S40 simultaneously, and the relative distance d between the first processed object W1 and the second processed object W2 can be minimized as much as possible to perform S44 and S34 simultaneously. That is, it is possible to maintain a state in which the relative distance d between the first processed object W1 and the second processed object W2 is minimized, so that the first processed object W1 and the second processed object W2 move synchronously back and forth in the same direction. As a result, the utilization efficiency of the ion beam can be improved.

[0123] If the injection process is completed in S46 (S46 "Yes"), the first holding device 40 is moved to the first transport position 80 (S48), and the second holding device 42 is moved to the second transport position 82 (S50). The order of steps S48 and S50 is irrelevant; S50 can start after S48 or after S50. Steps S48 and S50 can also be performed simultaneously. Furthermore, when the first retraction position is the first transport position 80, the first holding device 40 is already positioned at the first transport position 80 in step S38, so step S48 can be omitted. Similarly, when the second retraction position is the second transport position 82, the second holding device 42 is already positioned at the second transport position 82 in step S44, so step S50 can be omitted.

[0124] Figure 11 The illustrated process can be repeated until the injection step for multiple items to be processed consecutively is completed. According to... Figure 11 The process can simultaneously perform the first handling step of moving the first workpiece W1 in and out using the first holding device 40 and the second handling step of moving the second workpiece W2 in and out using the second holding device 42, thus improving production efficiency. Figure 11 The illustrated process is preferably suitable for situations where the implantation time of the ion beam irradiation of the treated object is sufficiently short as to be less than the handling time required for the object to be removed and placed in (e.g., less than half). Furthermore, Figure 11 The process shown is also preferably applicable when the injection time of the ion beam irradiating the object to be treated is sufficiently long than the handling time required for the object to be removed and placed in (e.g., more than twice as long). Figure 11 The illustrated process can also be applied when the injection time for irradiating the object with the ion beam is approximately the same as the handling time required for removing and placing the object, but in this case, Figure 10 The process shown may be more efficient.

[0125] In the above embodiment, the beam generating apparatus 12 is shown to generate a scanning beam using a beam scanning unit 28 and a beam parallelization unit 30. In another embodiment, the beam generating apparatus may also generate a strip beam. The beam generating apparatus may include a strip beam generating unit instead of the beam scanning unit 28. The strip beam generating unit generates a strip beam by diverging a point-like ion beam in the vertical direction. The strip beam generating unit may be configured as an electric field type or a magnetic field type beam diverging device.

[0126] In the above embodiment, the ion beam extracted from the ion source 20 is shown as a strip-shaped beam that diffuses in the horizontal direction. In another embodiment, the ion beam extracted from the ion source may also be a strip-shaped beam that diffuses in the vertical direction. In this case, the front slit of the ion source has a slit shape with a long opening width in the vertical direction and a short opening width in the horizontal direction. Similarly, the extraction electrode of the extraction section has a slit shape with a long opening width in the vertical direction and a short opening width in the horizontal direction. In this case, the mass spectrometry analysis section is configured to deflect the strip-shaped beam that diffuses in the vertical direction in the horizontal direction. In this case, the beam generation apparatus may not include the beam scanning section 28 and the beam parallelization section 30. In this case, the ion source and the extraction section can be described as a strip-shaped beam generation section for generating a strip-shaped beam that diffuses in the vertical direction.

[0127] In another embodiment described above, the size of the vertically diffused strip beam's irradiation range in the vertical direction is larger than the size of the workpiece in the vertical direction. Therefore, the beam generating apparatus for generating the strip beam is configured to irradiate an ion beam within an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed on the workpiece. Furthermore, in the above embodiment, the beam generating apparatus 12 for generating a scanning beam is configured to irradiate an ion beam within an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed on the workpiece.

[0128] In the above embodiment, a plurality of retaining devices 40, 42 are shown to be provided in the injection processing chamber 14. In another embodiment, only one retaining device may be provided in the injection processing chamber 14. The retaining device may be configured identically to either the first retaining device 40 or the second retaining device 42 described above.

[0129] In the above embodiment, the scanning direction of the scanning beam SB is shown to be vertical. In another embodiment, the scanning direction of the scanning beam SB may also be configured to be inclined relative to the vertical direction. In this case, the beam scanning unit 28, the beam parallelization unit 30, the acceleration / deceleration unit 32, and the energy analysis unit 34 (for example, located downstream of the mass spectrometry analysis unit 24 and upstream of the beam scanning unit 28) are arranged in a position that rotates about the beamline A extending along the z2 direction as the rotation axis (i.e., arranged in an inclined orientation). Alternatively, it may be configured such that only the beam scanning unit 28 and the beam parallelization unit 30 are rotated, without rotating at least one of the acceleration / deceleration unit 32 and the energy analysis unit 34. In this case, the scanning direction of the scanning beam SB is preferably within 45 degrees from the vertical direction.

[0130] In the above embodiment, the first holding device 40 and the second holding device 42 are shown moving in the horizontal direction. In another embodiment, the direction of movement of the first holding device 40 and the second holding device 42 may not be horizontal; they may be tilted relative to the horizontal direction. The direction of movement of the first holding device 40 and the second holding device 42 may be any direction different from the horizontal direction and traversing the scanning beam.

[0131] One embodiment of the present invention is as follows.

[0132] (Item 1) An ion implantation device comprising: Ion source, generates ions; An extraction section extracts ions from the ion source to generate an ion beam; The beam scanning unit is configured to reciprocate the ion beam in a scanning direction different from the horizontal direction to generate a scanning beam; and The holding device is configured to hold the object being processed and to cause the object being processed held by the holding device to reciprocate in a direction tangential to the scanning beam.

[0133] (Item 2) The ion implantation apparatus according to Item 1, wherein, The holding device is configured to cause the object being processed, which is held by the holding device, to reciprocate in the horizontal direction.

[0134] (Item 3) The ion implantation apparatus according to item 1 or 2, wherein, The scanning direction is within 45 degrees from the vertical direction.

[0135] (Item 4) The ion implantation apparatus according to item 1 or 2, wherein, The scanning direction is vertical.

[0136] (Item 5) The ion implantation apparatus according to any one of items 1 to 4, wherein, The ion source has a front slit through which the ions extracted by the extraction portion pass. The horizontal opening width of the front slit is greater than the vertical opening width of the front slit.

[0137] (Item 6) The ion implantation apparatus according to Item 5, wherein, The ion source has the following characteristics: An arc chamber having an internal space and a front slit for drawing out the ions from plasma generated in the internal space; and A magnetic device applies a magnetic field in the horizontal direction to the internal space.

[0138] (Item 7) The ion implantation apparatus according to item 5 or 6, wherein, The extraction portion includes an extraction electrode, and the extraction electrode has an extraction opening through which the ion beam passes. The width of the outlet in the horizontal direction is greater than the width of the outlet in the vertical direction.

[0139] (Item 8) The ion implantation apparatus according to any one of items 1 to 7 further comprises: A mass spectrometry analysis unit is disposed between the extraction unit and the beam scanning unit, which deflects the ion beam in the horizontal direction.

[0140] (Item 9) The ion implantation apparatus according to Item 8, wherein, The mass spectrometry analysis unit includes a magnet device for applying a vertical magnetic field to the ion beam.

[0141] (Item 10) The ion implantation apparatus according to item 8 or 9 further comprises: A magnetic shielding component is disposed between the lead-out portion and the mass spectrometry analysis portion, and has a passage opening through which the ion beam passes.

[0142] (Item 11) The ion implantation apparatus according to any one of items 8 to 10 further comprises: A beamforming section is disposed between the mass spectrometry analysis section and the beam scanning section, and includes at least one lens device for adjusting at least one of the cross-sectional shape of the ion beam and the convergence / divergence angle.

[0143] (Item 12) The ion implantation apparatus according to any one of items 1 to 11 further comprises: A beam parallelization section is provided downstream of the beam scanning section to make the scanning beam parallel.

[0144] (Item 13) The ion implantation apparatus according to any one of items 1 to 12 further comprises: An energy analysis unit, the energy analysis unit comprising a deflection device for deflecting the scanning beam in the horizontal direction and an energy analysis slit disposed downstream of the deflection device.

[0145] (Item 14) The ion implantation apparatus according to Item 13, wherein, The deflection device includes an electrode pair facing each other across the scanning beam and a power source for applying a DC voltage to the electrode pair.

[0146] (Item 15) The ion implantation apparatus according to Item 14, wherein, The electrode pairs of the deflection device are configured to be opposite each other in the horizontal direction.

[0147] (Item 16) The ion implantation apparatus according to Item 14, wherein, The electrode pairs of the deflection device are configured to face each other in a direction orthogonal to the scanning direction.

[0148] (Item 17) An ion implantation method, comprising the following steps: Use an ion source to generate ions; Ions are extracted from the ion source to generate an ion beam; The ion beam is scanned back and forth in a scanning direction different from the horizontal direction to generate a scanning beam; and The object being processed is moved back and forth in a direction that is transverse to the scanning beam.

[0149] One embodiment of the present invention is as follows.

[0150] (Item 18) An ion implantation apparatus comprising: A beam generating apparatus is configured to generate an ion beam to irradiate a workpiece, wherein the ion beam irradiates a vertically irradiated area whose size is larger than the size of the surface to be treated of the workpiece. The first holding device is configured to hold a first subject to be treated, and is configured to reciprocate the first subject to be treated in a horizontal direction such that the first subject to be treated, held by the first holding device, bisects the irradiation range; and The second holding device is configured to hold the second subject and to reciprocate the second subject in the horizontal direction such that the second subject held by the second holding device traverses the irradiation range.

[0151] (Item 19) The ion implantation apparatus according to Item 18, wherein, The first holding device is configured to move between a first injection position for irradiating the first treated object with the ion beam and a first transport position for moving the first treated object onto or from the first holding device. The second holding device is configured to move between a second injection position for irradiating the second subject with the ion beam and a second transport position for moving the second subject onto or from the second holding device.

[0152] (Item 20) The ion implantation apparatus according to Item 19, wherein, The first injection position and the second injection position are located between the first transport position and the second transport position.

[0153] (Item 21) The ion implantation apparatus according to item 19 or 20, wherein, When viewed from the beam travel direction, the first range of movement of the first object being treated, which is reciprocated at the first injection position by the first holding device, overlaps with the second range of movement of the second object being treated, which is reciprocated at the second injection position by the second holding device.

[0154] (Item 22) The ion implantation apparatus according to Item 21, wherein, The first moving range is the same as the second moving range.

[0155] (Item 23) The ion implantation apparatus according to any one of items 19 to 22, wherein, The position of the first processed object held by the first holding device at the first injection position in the vertical direction is the same as the position of the second processed object held by the second holding device at the second injection position in the vertical direction.

[0156] (Item 24) An ion implantation apparatus according to any one of items 19 to 23, wherein the position of the first treated object held by the first holding device at the first implantation position in the beam travel direction is the same as the position of the second treated object held by the second holding device at the second implantation position in the beam travel direction.

[0157] (Item 25) The ion implantation apparatus according to any one of items 19 to 24, wherein, The first holding device is configured to be unable to move to the second transport position. The second holding device is configured to be unable to move to the first transport position.

[0158] (Item 26) The ion implantation apparatus according to any one of items 18 to 25, wherein, The first holding device and the second holding device are capable of moving in the same direction.

[0159] (Item 27) The ion implantation apparatus according to any one of items 18 to 26, wherein, The first holding device and the second holding device are capable of moving simultaneously in the same direction while maintaining the relative distance between the first processed object held by the first holding device and the second processed object held by the second holding device.

[0160] (Item 28) The ion implantation apparatus according to any one of items 18 to 27, wherein, The first holding device and the second holding device are capable of moving along a common guide rail.

[0161] (Item 29) The ion implantation apparatus according to any one of items 18 to 28, wherein, The first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed in the vertical direction and a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction. The second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed in the vertical direction and a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction.

[0162] (Item 30) The ion implantation apparatus according to any one of items 18 to 28, wherein, The first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first object to be processed by rotating about the horizontal rotation axis and a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed by rotating about the vertical rotation axis. The second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed by rotating about the horizontal rotation axis and a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed by rotating about the vertical rotation axis.

[0163] (Item 31) The ion implantation apparatus according to any one of items 18 to 28, wherein, The first holding device includes a first vertical angle adjustment mechanism for adjusting the orientation of the first workpiece. The first vertical angle adjustment mechanism is configured such that, when the first workpiece is being moved in or out, the surface to be treated of the first workpiece is aligned with the horizontal direction, and when the first workpiece is irradiated with the ion beam, the surface to be treated of the first workpiece is not aligned with the horizontal direction. The second holding device includes a second vertical angle adjustment mechanism for adjusting the orientation of the second object to be processed. The second vertical angle adjustment mechanism is configured such that when the second object to be processed is being moved in or out, the surface to be processed of the second object to be processed is aligned with the horizontal direction, and when the second object to be processed is irradiated with the ion beam, the surface to be processed of the second object to be processed is not aligned with the horizontal direction.

[0164] (Item 32) The ion implantation apparatus according to any one of items 18 to 31, wherein, The first holding device includes a first horizontal angle adjustment mechanism for adjusting the orientation of the first object to be processed in the horizontal direction and a first torsion mechanism for adjusting the torsion angle of the first object to be processed. The second holding device includes a second horizontal angle adjustment mechanism for adjusting the orientation of the second object to be processed in the horizontal direction and a second torsion mechanism for adjusting the torsion angle of the second object to be processed.

[0165] (Item 33) The ion implantation apparatus according to any one of items 18 to 32, wherein, The beam generating apparatus includes a beam scanning unit that reciprocates the ion beam within the irradiation range.

[0166] (Item 34) The ion implantation apparatus according to any one of items 18 to 32, wherein, The beam generating apparatus includes a strip beam generating section that generates a strip beam having a beam size corresponding to the size of the irradiation range.

[0167] (Item 35) An ion implantation method comprising the following steps: Generate an ion beam that irradiates the object being treated; The ion beam is irradiated within the irradiation range whose size in the vertical direction is larger than the size of the surface to be treated of the object being treated. The first object to be processed is held using the first holding device; The first holding device is used to reciprocate the first subject in a horizontal direction such that the first subject is transverse to the irradiation range; The second object to be processed is held by the second holding device; and The second holding device is used to reciprocate the second treated object in the horizontal direction such that the second treated object is traversed across the irradiation range.

[0168] Figure 12 This is a top view showing the schematic structure of the ion implantation apparatus 10A according to another embodiment. Figure 13 This is a side view showing the schematic structure of the ion implantation apparatus 10A according to another embodiment. Figure 12 and Figure 13 The ion implantation device 10A shown is Figure 1 and Figure 2 The difference in the ion implantation device 10 shown is that the beam current meter 100 is disposed within the beam blocker 38. The following discusses... Figure 12 and Figure 13 The ion implantation device 10A shown is used in conjunction with... Figure 1 and Figure 2The description focuses on the differences of the ion implantation device 10 shown, while omitting the description of the commonalities as appropriate.

[0169] A beam blocker 38 is located at the downstream end of beamline A, for example, mounted on the side wall of the injection processing chamber 14. When no substances W1 or W2 are present on beamline A, the ion beam is incident on the beam blocker 38. A beam current meter 100 is configured to measure the beam current of the ion beam incident on the beam blocker 38. The beam current meter 100 is sometimes also referred to as a tuning Faraday.

[0170] Figure 14 This is a schematic front view of the beam current measuring device 100 according to the embodiment. Figure 15 It is a schematic representation Figure 14 The cross-sectional view of the beam current measuring device 100 shown is taken along line AA. As shown, the beam current measuring device 100 includes a first electrode 110, a plurality of second electrodes 120, and a magnetic field generator 130 configured to apply an electron suppression magnetic field B around these electrodes. Details regarding the magnetic field generator 130 will be described later.

[0171] The first electrode 110 has a first beam irradiation surface 112 for irradiating an ion beam (e.g., a scanning beam SB). The first beam irradiation surface 112 corresponds to the surface of the first electrode 110 facing upstream. The first electrode 110 is a plate-shaped electrode configured orthogonal to the travel direction (z3 direction) of the ion beam, and the first beam irradiation surface 112 is configured along a plane (x3-y plane) orthogonal to the z3 direction.

[0172] As described above, the ion beam incident on the beam current measuring device 100 is scanned in the vertical direction (y-direction), thus the area capable of irradiating the ion beam in the x3-y plane is elongated along the y-direction. The dimensions of the first electrode 110 in the x3 and y directions are defined such that the irradiation range of this elongated ion beam falls within the first beam irradiation surface 112. In other words, the dimension of the scanning beam SB in the y-direction is smaller than the dimension of the first electrode 110 in the y-direction. Furthermore, the dimension of the scanning beam SB in the x3 direction is smaller than the dimension of the first electrode 110 in the x3 direction. Therefore, when the scanning beam SB is incident on the beam current measuring device 100, its entirety irradiates the first beam irradiation surface 112. The scanning beam SB does not irradiate the outer side of the first electrode 110.

[0173] The first electrode 110 is configured to detect ions of the ion beam irradiating the first beam irradiation surface 112. The first electrode 110 is made of, for example, graphite. Alternatively, the first electrode 110 may be made of a metal such as a high-melting-point metal or other suitable conductor. A first current detector 114, electrically connected to the first electrode 110, is provided on the beam current measuring device 100. The first current detector 114 is configured to detect ions of the ion beam irradiating the first beam irradiation surface 112 as a first ion beam current. The first current detector 114 may be, for example, a well-known galvanometer. The measurement result of the first ion beam current by the first current detector 114 can be provided from the first current detector 114 to the control device 18.

[0174] A plurality of apertures 116 are formed on the first electrode 110 and on the first beam irradiation surface 112 in a predetermined configuration. The first electrode 110 may have at least three apertures 116 or any number of apertures 116. As a non-limiting example, as shown in the figure, the first electrode 110 has four apertures 116.

[0175] Multiple apertures 116 are arranged along the y-direction. When viewed towards the z3-direction, the multiple apertures 116 have the same shape. Each aperture 116 has an aperture width in the y-direction and an aperture length in the x3-direction, with the aperture length being longer than the aperture width. That is, each aperture 116 is elongated along the x3-direction.

[0176] The aperture length of aperture 116 is equivalent to, or may be slightly longer than, the dimension of the ion beam in the x3 direction. Thus, aperture 116 can receive the entire width of the ion beam in the x3 direction.

[0177] The dimension of the ion beam in the y-direction is larger than the dimension of each of the plurality of apertures 116 in the y-direction. Therefore, a portion of the ion beam irradiating the first beam irradiation surface 112 is cut off by the apertures 116. The cut-off beam portion 118 passes through the apertures 116 and advances further downstream within the beam current measuring device 100. The remaining portion of the ion beam, excluding the beam portion 118, irradiates the first beam irradiation surface 112 as described above and is detected as the first ion beam current by the first current detector 114.

[0178] A plurality of second electrodes 120 are disposed downstream of the first electrode 110 in the z3 direction and correspond to a plurality of apertures 116 of the first electrode 110, respectively. Therefore, similar to the plurality of apertures 116 of the first electrode 110, the plurality of second electrodes 120 are arranged along the y direction. When viewed in the z3 direction, the plurality of second electrodes 120 have the same shape. A Faraday cup is formed by a combination of an aperture 116 and its corresponding second electrode 120, provided with the same number of second electrodes 120 as the plurality of apertures 116.

[0179] Multiple second electrodes 120 each have a second beam irradiation surface 122. Each second electrode 120 is a cup-shaped electrode disposed opposite the back surface of the first electrode 110 (i.e., the surface of the first electrode 110 opposite to the first beam irradiation surface 112), and the second beam irradiation surface 122 includes the bottom surface of the cup-shaped electrode disposed opposite the back surface of the first electrode 110. The dimensions of the second electrode 120 in the x3 and y directions are defined such that the beam portion 118 from the corresponding aperture 116 falls within the second beam irradiation surface 122. Therefore, the second electrode 120 has an elongated shape along the x3 direction. The entire beam portion 118 through the corresponding aperture 116 irradiates the second beam irradiation surface 122. The beam portion 118 does not irradiate the outer side of the second electrode 120.

[0180] Multiple second electrodes 120 are configured to detect ions that irradiate the second beam irradiation surface 122 of each of the multiple second electrodes 120 through multiple apertures 116. Similar to the first electrode 110, the second electrodes 120 are made of, for example, graphite or other suitable conductors. A plurality of second current detectors 124 are provided on the beam current measuring device 100. The multiple second current detectors 124 are each configured to be electrically connected to the multiple second electrodes 120 to detect ions irradiating the beam portion 118 of the second beam irradiation surface 122 as a second ion beam current. The second current detectors 124 can be, for example, well-known galvanometers. The measurement results of the second ion beam current by the second current detectors 124 can be provided from the second current detectors 124 to the control device 18.

[0181] The control device 18 can use the measurement results of the beam current measuring device 100 as follows. For example, the control device 18 can add the measurement results of the first ion beam current by the first current detector 114 and the measurement results of the second ion beam current by the second current detector 124, and regard the sum of the beam currents thus obtained as the beam current of the ion beam.

[0182] Furthermore, when irradiated by the scanning beam SB, it is assumed that the measured result of the first ion beam current and the measured result of the second ion beam current exist in a predetermined ratio. This ratio is based on the ratio of the dimension of the scanning beam SB in the y-direction to the sum of the dimensions of the plurality of apertures 116 in the y-direction. Therefore, by comparing the ratio of the first ion beam current to the second ion beam current obtained through actual measurement with the expected ratio, the validity of the measurement by the beam current measuring device 100 can be evaluated. For example, if the difference between the measured ratio and the expected ratio is within a predetermined range, the measurement can be judged as valid; on the other hand, if the difference is outside the predetermined range, the measurement can be judged as invalid. Alternatively, the validity of the measurement performed by each second electrode 120 can also be evaluated by comparing the measurement results from each second electrode 120 with each other.

[0183] When irradiated by a scanning ion beam as a scanning beam SB, the beam density distribution of the ion beam in the scanning direction can be inferred from the time-dependent change in the beam current detected from a certain second electrode 120. Furthermore, by comparing the measurement results of the time-dependent change in the beam current detected from each second electrode 120 with each other, the validity of the measurement performed by each second electrode 120 can also be evaluated.

[0184] Figure 16 This is a schematic diagram illustrating an example of the magnetic field generator 130 of the beam current measuring device 100 according to the embodiment and the electron suppression magnetic field generated therefrom. The magnetic field generator 130 is configured to apply a first magnetic field B11 that suppresses the inflow of electrons into and out of the first electrode 110 and a second magnetic field B12 that suppresses the inflow of electrons into and out of the plurality of second electrodes 120 respectively.

[0185] The magnetic field generator 130 includes: a plurality of first permanent magnets 132 generating a first magnetic field B11; a plurality of second permanent magnets 134 generating a second magnetic field B12; and a magnetic yoke 136 connecting the plurality of first permanent magnets 132 and the plurality of second permanent magnets 134. The magnetic field generator 130 is disposed in the z3 direction between the first electrode 110 and the second electrode 120.

[0186] Multiple first permanent magnets 132 are arranged along the y-direction such that, when viewed towards the z3 direction, multiple apertures 116 are respectively disposed between two first permanent magnets 132. In the illustrated arrangement example of the first permanent magnets 132, an aperture 116 is disposed between two adjacent first permanent magnets 132 in the y-direction arrangement, and a first permanent magnet 132 is disposed between two adjacent apertures 116 in the y-direction. In other words, the first permanent magnets 132 and apertures 116 are arranged alternately in the y-direction.

[0187] A plurality of first permanent magnets 132 are disposed in the z3 direction between the first electrode 110 and the yoke 136. More specifically, the plurality of first permanent magnets 132 are mounted on the front surface 136a of the yoke. The yoke 136 is disposed in the z3 direction downstream of the first electrode 110 and upstream of the second electrode 120, and the front surface 136a of the yoke corresponds to the surface of the yoke 136 facing the first electrode 110.

[0188] The first permanent magnet 132 is arranged along the aperture 116 in the x3 direction. Therefore, the first magnetic field B11 is generated over the entire length of the aperture 116 in the x3 direction.

[0189] Two first permanent magnets 132, adjacent in the y-direction with an aperture 116 between them, are configured to have their distinct magnetic poles facing the first electrode 110. Figure 16 In this diagram, for ease of explanation, the N pole of a magnet is represented as black, and the S pole as white. If we consider... Figure 16 Taking two first permanent magnets 132 separated by the uppermost aperture 116 in the y-direction as an example, the first permanent magnet 132 on the upper side relative to the aperture 116 is configured such that its S pole faces the first electrode 110 and its N pole is in contact with the yoke 136, while the first permanent magnet 132 on the lower side is configured such that its N pole faces the first electrode 110 and its S pole is in contact with the yoke 136. In this way, a plurality of first permanent magnets 132 are arranged in such a way that the directions of their magnetic poles alternate in opposite directions.

[0190] Therefore, multiple first permanent magnets 132 generate a first magnetic field B11 in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112 in the z3 direction. The first magnetic field B11 is a tangential magnetic field with magnetic poles between adjacent apertures 116 when viewed in the z3 direction. The magnetic poles of the tangential magnetic field are arranged alternately in the y-direction of the first permanent magnets 132.

[0191] like Figure 16 As shown, an additional first permanent magnet 132a can be arranged along the y-direction together with the first permanent magnet 132 arranged adjacent to the aperture 116. When viewed towards the z3 direction, the additional first permanent magnet 132a is arranged on the upper and lower sides of the first permanent magnet 132 in the y-direction at both ends of the first electrode 110. Similar to the first permanent magnet 132, the additional first permanent magnet 132a is mounted on the front side 136a of the yoke. In this way, by adding the first permanent magnet 132a, the y-direction length of the region generating the first magnetic field B11 can be made to match the y-direction length of the first electrode 110.

[0192] Similar to the first permanent magnet 132, the additional first permanent magnet 132a is also configured such that the orientation of its magnetic poles is opposite to that of the adjacent first permanent magnet 132 in the y-direction. Figure 16 Taking the first permanent magnet 132a at the top in the y direction as an example, the additional first permanent magnet 132a is configured with its N pole facing the first electrode 110 and its S pole in contact with the yoke 136, opposite to the orientation of the magnetic pole of the first permanent magnet 132 adjacent to the top aperture 116 on the upper side.

[0193] Multiple second permanent magnets 134 are arranged along the y-direction such that, when viewed towards the z3 direction, multiple second electrodes 120 are respectively disposed between two second permanent magnets 134. In the illustrated configuration example of the second permanent magnets 134, a second electrode 120 is disposed between two adjacent second permanent magnets 134 in the y-direction arrangement, and two second permanent magnets 134 are disposed between two adjacent second electrodes 120 in the y-direction. In other words, a second permanent magnet 134 is provided on both sides of each second electrode 120, and multiple such combinations of one second electrode 120 and two second permanent magnets 134 are arranged along the y-direction.

[0194] Furthermore, as described above, the second electrode 120 and the aperture 116 are positioned at the same location in the y-direction. Therefore, when viewed in the z3 direction, the first permanent magnet 132 and the second electrode 120 are arranged alternately in the y-direction. A plurality of first permanent magnets 132 are arranged along the y-direction such that, when viewed in the z3 direction, each first permanent magnet 132 is positioned between two second permanent magnets 134. As shown, two second permanent magnets 134 are positioned between two adjacent second electrodes 120 in the y-direction, and a first permanent magnet 132 is positioned between these two second permanent magnets 134.

[0195] A plurality of second permanent magnets 134 are disposed in the z3 direction between the second electrode 120 and the yoke 136. More specifically, the plurality of second permanent magnets 134 are mounted on the back side 136b of the yoke. The back side 136b of the yoke corresponds to the surface of the yoke 136 facing the side of the second electrode 120 (i.e., the side opposite to the front side 136a of the yoke).

[0196] The second permanent magnet 134 is arranged along the second electrode 120 in the x3 direction. Therefore, the second magnetic field B12 is generated over the entire length of the second electrode 120 in the x3 direction.

[0197] Two second permanent magnets 134, adjacent in the y-direction and separated by the second electrode 120, are arranged such that their distinct magnetic poles face the first electrode 110. If... Figure 16Taking the combination of two second permanent magnets 134 separated by the uppermost second electrode 120 in the y-direction as an example, the second permanent magnet 134 on the upper side relative to the second electrode 120 is configured such that its S pole faces the first electrode 110 and is in contact with the yoke 136, while the second permanent magnet 134 on the lower side is configured such that its N pole faces the first electrode 110 and is in contact with the yoke 136. Regarding Figure 16 A combination of two second permanent magnets 134 separated by the second second electrode 120 from the top in the y-direction. The upper second permanent magnet 134 relative to the second electrode 120 is configured with its N pole facing the first electrode 110 and in contact with the yoke 136, while the lower second permanent magnet 134 is configured with its S pole facing the first electrode 110 and in contact with the yoke 136. Regarding... Figure 16 The combination of two second permanent magnets 134, which are the third and fourth second electrodes 120 from the top in the y direction, also repeats this orientation of the magnetic poles.

[0198] Therefore, a plurality of second permanent magnets 134 generate a second magnetic field B12 around and inside the second electrode 120, which includes the upstream side of the second electrode 120. As described above, the second electrode 120 is a cup-shaped electrode, so the second magnetic field B12 transversely cuts through the space surrounded by the cup-shaped electrode along the y-direction.

[0199] Furthermore, the orientation of the magnetic poles of the second permanent magnet 134 is defined such that the first permanent magnet 132 and the second permanent magnet 134 reinforce each other's magnetic fields in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112. As shown, the orientation of the magnetic poles of the second permanent magnet 134 adjacent to a certain first permanent magnet 132 is the same as that of the first permanent magnet 132. Therefore, the magnetic poles of one first permanent magnet 132 and two second permanent magnets 134 disposed between two adjacent second electrodes 120 have the same orientation. The orientation of the second magnetic field B12 generated by the second permanent magnet 134 becomes the same as that of the first magnetic field B11 in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112. Therefore, the second magnetic field B12 can strengthen the first magnetic field B11 in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112. Similarly, the orientation of the first magnetic field B11 becomes the same as that of the second magnetic field B12 when it is transversely cut across the second electrode 120 along the y-direction. Therefore, the first magnetic field B11 can enhance the second magnetic field B12 when it is transversely cut across the second electrode 120 along the y-direction.

[0200] The magnetic yoke 136 is a single, plate-shaped yoke configured orthogonal to the z3 direction, having multiple openings 138 through which the beam portion 118 passes. The magnetic yoke 136 is made, for example, of pure iron or other soft magnetic materials. The same magnetic yoke 136 is used for the first permanent magnet 132 and the second permanent magnet 134. This saves space, reduces costs, and shortens assembly time.

[0201] With this configuration, the magnetic field generator 130 can generate a tangential magnetic field as a first magnetic field B11 in the space upstream of the first electrode 110 and adjacent to the first beam irradiation surface 112, and generate a second magnetic field B12 that tangentially cuts across the second electrode 120 along the y-direction in the space surrounded by the second electrode 120. The first magnetic field B11 and the second magnetic field B12 are superimposed to generate an electron suppression magnetic field B. The first magnetic field B11 functions to suppress the inflow of electrons into and out of the first electrode 110. The second magnetic field B12 functions to suppress the inflow of electrons into and out of each of the multiple second electrodes 120. With this electron suppression magnetic field B, the beam current of the ion beam can be accurately measured through the first electrode 110 and each of the multiple second electrodes 120.

[0202] Existing beam current measuring devices include those with only one Faraday cup, which measures the beam current of the entire ion beam, including the scanning beam SB, using this single Faraday cup. In this case, to measure an ion beam with relatively large diffusion, such as the scanning beam SB, the opening of the single Faraday cup must be increased to accommodate the ion beam. However, if the opening of the Faraday cup becomes too large, it becomes difficult to properly apply an electron suppression magnetic field to suppress electron inflow into or outflow from the Faraday cup, resulting in a decrease in the accuracy of beam current detection. Furthermore, another existing beam current measuring device employs a structure with multiple Faraday cups arranged with openings smaller than the ion beam size. However, such a structure cannot measure the beam current of ion beams that are not incident on the openings of the Faraday cups.

[0203] In contrast, according to a non-limiting exemplary embodiment of the present invention, the beam current can be measured by the second electrode 120 with respect to the beam portion 118 of the ion beam incident on the beam current measuring device 100, and the beam current can be measured by the first electrode 110 with respect to the portion other than the beam portion 118. Therefore, the problems described above in existing beam current measuring devices can be solved or mitigated.

[0204] Furthermore, existing beam current meters employ devices that generate electron suppression magnetic fields by placing magnets only at both ends of the meter. In this case, to generate the desired magnetic field size, the magnets at each end become relatively large, resulting in a tendency for the leakage magnetic field around the beam current meter to strengthen. If this leakage magnetic field extends to the region where ions are implanted on the wafer, it may affect the behavior of electrons around the wafer. Consequently, the leakage magnetic field may lead to product defects in components processed in the ion implantation apparatus.

[0205] In contrast, in a non-limiting exemplary embodiment of the present invention, the first permanent magnets 132 with different pole orientations are arranged at relatively short intervals. Therefore, the distance between the poles is small and the magnetic path length is short, and the magnetic flux densities of the different poles cancel each other out over a distance. Thus, leakage magnetic fields in the ion-implanted region of the wafer can be reduced. Similarly, leakage magnetic fields in the ion-implanted region of the wafer can be reduced with respect to the second permanent magnet 134.

[0206] Alternatively, the first permanent magnet 132 and the second permanent magnet 134 may be arranged differently from the example shown in the figure.

[0207] In the above example, the first permanent magnet 132 and the aperture 116 are arranged alternately in the y-direction. Alternatively, as with the arrangement of the second permanent magnet 134 described above, the first permanent magnet 132 can be placed on both sides of each aperture 116, and multiple such combinations of one aperture 116 and two first permanent magnets 132 can be arranged along the y-direction. Even so, the multiple first permanent magnets 132 are arranged along the y-direction such that when viewed towards the z3 direction, the multiple apertures 116 are respectively positioned between two first permanent magnets 132. Two first permanent magnets 132 adjacent in the y-direction with one aperture 116 between them are arranged so that their different magnetic poles face the first electrode 110.

[0208] Furthermore, the second permanent magnet 134 and the second electrode 120 can be arranged alternately in the y-direction. Even so, the multiple second permanent magnets 134 are arranged along the y-direction such that when viewed in the z3 direction, the multiple second electrodes 120 are respectively disposed between two second permanent magnets 134. Two adjacent second permanent magnets 134 in the y-direction, separated by one second electrode 120, are arranged such that their different magnetic poles face the first electrode 110.

[0209] Figure 17 It is a more detailed expression Figure 15The diagram shows a partial cross-sectional view of a portion of the beam current measuring device 100. As described above, the beam current measuring device 100 includes a first electrode 110, a plurality of second electrodes 120, and a magnetic field generator 130. The magnetic field generator 130 is disposed between the first electrode 110 and the plurality of second electrodes 120, and includes a plurality of first permanent magnets 132, a plurality of second permanent magnets 134, and a yoke 136. The first electrode 110 has a plurality of recesses 111 arranged corresponding to the plurality of second electrodes 120, and an aperture 116 is formed at the bottom of each recess 111.

[0210] The beam current measuring device 100 includes a cooling block 140 for cooling the first electrode 110. The cooling block 140 is disposed between the first electrode 110 and the magnetic yoke 136 in the z3 direction and between a plurality of recesses 111 of the first electrode 110 in the y direction. The cooling block 140 is mounted on the back side of the first electrode 110 and is in thermal contact with the first electrode 110. The cooling block 140 is formed, for example, of aluminum, but may also be made of other suitable metals or materials with high thermal conductivity. A refrigerant flow path for refrigerant (e.g., cooling water) may be formed inside the cooling block 140. The cooling block 140 helps suppress excessive temperature rise of the first electrode 110 caused by ion beam irradiation. Alternatively, a similar cooler (not shown) may be attached to the second electrode 120.

[0211] A groove for accommodating the first permanent magnet 132 is provided on the surface of the cooling block 140 on the side opposite to the first electrode 110 in the z3 direction. Furthermore, a protrusion 142 is formed on the front surface 136a of the yoke 136 so that the first permanent magnet 132, housed in the groove of the cooling block 140, can contact the yoke 136. In this way, the first permanent magnet 132 can be positioned close to the first electrode 110 while simultaneously contacting the yoke 136, and the first electrode 110 can be cooled by the cooling block 140.

[0212] Figure 18 This is a schematic diagram illustrating another example of the magnetic field generator 130 of the beam current measuring device 100 according to the embodiment. Similar to the embodiment described above, the magnetic field generator 130 includes: a plurality of first permanent magnets 132 that apply a first magnetic field B11 near the first beam irradiation surface 112 of the first electrode 110; and a plurality of second permanent magnets 134 that apply a second magnetic field B12 to the second electrode 120.

[0213] The arrangement of the first permanent magnets 132 is the same as in the above embodiment, but the arrangement of the second permanent magnets 134 is different. As shown, two second permanent magnets 134 adjacent in the y-direction, separated by the second electrode 120, are arranged such that their different magnetic poles face each other. For example, the second permanent magnet 134 on the upper side of the second electrode 120 has its S pole facing the second electrode 120, and the second permanent magnet 134 on the lower side of the second electrode 120 has its N pole facing the second electrode 120. Even so, a second magnetic field B12 can be generated by transversely cutting across the second electrode 120 along the y-direction.

[0214] Figure 19 Figures (a) and (b) are schematic diagrams illustrating an exemplary magnet configuration of the magnetic field generator 130. Figure 19 Figures (a) and (b) schematically illustrate the arrangement of the first permanent magnet 132 along the length direction (i.e., the x3 direction) of the aperture 116 when viewed towards the z3 direction. Figure 19 As shown in Figure (a), the first permanent magnet 132 can be arranged without gaps along the aperture 116 in the x3 direction. Or, as... Figure 19 As shown in Figure (b), the first permanent magnets 132 can also be arranged along the aperture 116 in the x3 direction with some gaps between them. By adjusting the gaps between the first permanent magnets 132, the magnetic field strength distribution generated by the first permanent magnets 132 in, for example, the x3 direction can be adjusted.

[0215] In the above embodiment, the case where the beam current measuring device 100 is located at the beam blocker 38 is described as an example. However, the beam current measuring device 100 may also be located at other positions on the beamline A. For example, the beam current measuring device 100 may be located inside the injection processing chamber 14 and be able to enter and exit the surface of the processed objects W1 and W2. The beam current measuring device 100 can retract from the injection position where the processed object W1 or W2 is located during ion injection and insert into the injection position when the processed object W1 or W2 is not in the injection position. In this way, the beam current measuring device 100 can measure the scanning beam SB at the position on the surface of the processed objects W1 and W2.

[0216] One embodiment of the present invention is as follows.

[0217] (Item 36) An ion implantation apparatus comprising a beam current measuring device, the beam current measuring device comprising: a first electrode having a first beam irradiation surface, detecting ions of an ion beam irradiating the first beam irradiation surface, and having a plurality of apertures formed on the first beam irradiation surface in a predetermined configuration. A plurality of second electrodes are disposed downstream of the first electrode in the direction of ion beam travel and respectively correspond to the plurality of apertures. Each of the plurality of second electrodes has a second beam irradiation surface, and each detects ions of the ion beam that pass through the plurality of apertures and irradiate the respective second beam irradiation surface of the plurality of second electrodes; and The magnetic field generator is configured to apply a first magnetic field that suppresses the inflow of electrons into and outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into and outflow of electrons from each of the plurality of second electrodes.

[0218] (Item 37) The ion implantation apparatus according to Item 36, wherein the magnetic field generator is configured to generate a tangential magnetic field as the first magnetic field in a space upstream of the first electrode and adjacent to the first beam irradiation surface in the direction of travel, and the tangential magnetic field has magnetic poles between adjacent apertures in the plurality of apertures when viewed in the direction of travel.

[0219] (Item 38) The ion implantation apparatus according to item 36 or 37, wherein each of the second electrodes is a cup-shaped electrode. The magnetic field generator is configured to generate a magnetic field that cuts through the space surrounded by the cup-shaped electrode as the second magnetic field.

[0220] (Item 39) An ion implantation apparatus according to any one of items 36 to 38, wherein the plurality of apertures of the first electrode and the plurality of second electrodes are arranged along a first direction orthogonal to the direction of travel.

[0221] (Item 40) The ion implantation apparatus according to item 39, wherein the magnetic field generator comprises: A plurality of first permanent magnets are arranged along a first direction such that, when viewed toward the direction of travel, the plurality of apertures are respectively disposed between two first permanent magnets to generate the first magnetic field; and A plurality of second permanent magnets are arranged along the first direction such that, when viewed toward the direction of travel, the plurality of second electrodes are respectively disposed between two second permanent magnets to generate the second magnetic field.

[0222] (Item 41) The ion implantation apparatus according to Item 40, wherein the two first permanent magnets are configured to have different magnetic poles facing the first electrode. The two second permanent magnets are configured to have different magnetic poles facing the first electrode.

[0223] (Item 42) The ion implantation apparatus according to Item 40, wherein the two first permanent magnets are configured to have different magnetic poles facing the first electrode. The two second permanent magnets are configured such that their different magnetic poles face each other.

[0224] (Item 43) An ion implantation apparatus according to any one of items 40 to 42, wherein the orientation of the magnetic poles of the second permanent magnet is defined such that the first permanent magnet and the second permanent magnet enhance each other's magnetic fields in the space upstream of the first electrode and adjacent to the first beam irradiation surface in the direction of travel.

[0225] (Item 44) An ion implantation apparatus according to any one of items 40 to 43, wherein the magnetic field generator has a magnetic yoke connecting the plurality of first permanent magnets and the plurality of second permanent magnets.

[0226] (Item 45) The ion implantation apparatus according to item 44, wherein the magnetic yoke is disposed downstream of the first electrode in the travel direction, and has a front side of the magnetic yoke facing the first electrode and a back side of the magnetic yoke facing the side opposite to the first electrode. The plurality of first permanent magnets are disposed on the front side of the yoke, and the plurality of second permanent magnets are disposed on the back side of the yoke.

[0227] (Item 46) An ion implantation apparatus according to any one of items 39 to 45, wherein the plurality of apertures each have an aperture width in the first direction and an aperture length in a second direction orthogonal to the ion beam travel direction and the first direction, the aperture length being longer than the aperture width.

[0228] (Item 47) An ion implantation apparatus according to any one of items 39 to 46, wherein the dimension of the ion beam in the first direction is smaller than the dimension of the first electrode in the first direction and larger than the dimension of each of the plurality of apertures in the first direction.

[0229] (Item 48) The ion implantation apparatus according to any one of items 39 to 47 further comprises: a beam scanner, which is capable of scanning the ion beam in the first direction by applying at least one of an electric field and a magnetic field to the ion beam by being disposed upstream of the first electrode in the direction of travel of the ion beam.

[0230] (Item 49) The ion implantation apparatus according to any one of items 36 to 48, wherein the beam current measuring device comprises: A first current detector, electrically connected to the first electrode, detects ions from the ion beam irradiated onto the first beam irradiation surface as the first ion beam current; and The second current detector is electrically connected to the plurality of second electrodes respectively, and detects the ions of the ion beam irradiated on the second beam irradiation surface as the second ion beam current.

[0231] (Item 50) A beam current measuring device, comprising: a first electrode having a first beam irradiation surface, detecting ions of an ion beam irradiating the first beam irradiation surface, and having a plurality of apertures formed on the first beam irradiation surface in a predetermined configuration; A plurality of second electrodes are disposed downstream of the first electrode in the direction of ion beam travel and respectively correspond to the plurality of apertures. Each of the plurality of second electrodes has a second beam irradiation surface, and each detects ions of the ion beam that pass through the plurality of apertures and irradiate the respective second beam irradiation surface of the plurality of second electrodes; and The magnetic field generator is configured to apply a first magnetic field that suppresses the inflow of electrons into and outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into and outflow of electrons from each of the plurality of second electrodes.

[0232] The present invention has been described above with reference to the various embodiments described above. However, the present invention is not limited to the embodiments described above. The structures of the various embodiments can be appropriately combined or replaced. Furthermore, the combination or processing order of the various embodiments can be appropriately rearranged based on the knowledge of those skilled in the art, or various design changes or modifications can be applied to the embodiments. Embodiments with such rearrangements or modifications can also be included within the scope of the ion implantation apparatus and ion implantation method involved in the present invention.

[0233] The embodiments of the present invention can be implemented by means of a computer program comprising one or more computer-readable sequences describing the methods of the present invention, or by means of a non-transitory and tangible storage medium (e.g., non-volatile memory, magnetic tape, disk, or optical disc) storing such a computer program. A processor can implement the methods of the present invention by executing such a computer program.

[0234] Industrial availability This invention can be applied to the fields of ion implantation devices and beam current measuring devices.

[0235] Symbol explanation: 10-Ion implantation device, 12-Beam generation device, 14-Implantation processing chamber, 16-Transportation device, 18-Control device, 20-Ion source, 20a-Arc chamber, 20b-Internal space, 20c-Front slit, 22-Extraction section, 22a-First extraction electrode, 22b-Second extraction electrode, 22c-First extraction opening, 22d-Second extraction opening, 23-Magnetic shielding, 24-Mass spectrometer analysis section, 24a-Mass spectrometer magnet device, 24b-Mass spectrometer slit, 2 6-Beamforming section, 26a-Lens assembly, 28-Beam scanning section, 28a, 28b-Scanning electrode pairs, 30-Beam parallelization section, 30a, 30b-Parsing lens electrodes, 34-Energy analysis section, 34a, 34b-AEF electrode pairs, 34c-Energy analysis slit, 40-First holding device, 42-Second holding device, 44-Guide rail, 50-First clamping mechanism, 50a-First lifting mechanism, 52-First torsion mechanism, 54-First vertical angle adjustment mechanism 56 - First horizontal angle adjustment mechanism; 58 - First reciprocating motion mechanism; 60 - Second clamping mechanism; 60a - Second lifting mechanism; 62 - Second torsion mechanism; 64 - Second vertical angle adjustment mechanism; 66 - Second horizontal angle adjustment mechanism; 68 - Second reciprocating motion mechanism; 70 - First conveying device; 72 - Second conveying device; 74 - First conveying port; 76 - Second conveying port; 80 - First conveying position; 82 - Second conveying position; 84 - Injection position; 100 - Beam current. Flow measuring device, 110-first electrode, 112-first beam irradiation surface, 116-aperture, 120-second electrode, 122-second beam irradiation surface, 130-magnetic field generator, 132-first permanent magnet, 134-second permanent magnet, 136-yoke, A-beam line, SB-scanning beam, W1-first processed object, W2-second processed object, B11-first magnetic field, B12-second magnetic field, C-moving range, E1-first movable range, E2-second movable range.

Claims

1. An ion implantation apparatus comprising a beam current measuring device, the beam current measuring device comprising: The first electrode has a first beam irradiation surface, detects ions of an ion beam irradiating the first beam irradiation surface, and has a plurality of apertures formed on the first beam irradiation surface in a predetermined configuration. A plurality of second electrodes are disposed downstream of the first electrode in the direction of ion beam travel and respectively correspond to the plurality of apertures. Each of the plurality of second electrodes has a second beam irradiation surface, and each detects ions of the ion beam that pass through the plurality of apertures and irradiate the respective second beam irradiation surface of the plurality of second electrodes; and The magnetic field generator is configured to apply a first magnetic field that suppresses the inflow of electrons into and outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into and outflow of electrons from each of the plurality of second electrodes.

2. The ion implantation apparatus according to claim 1, wherein, The magnetic field generator is configured to generate a tangential magnetic field as the first magnetic field in the space upstream of the first electrode and adjacent to the first beam irradiation surface in the direction of travel. When viewed in the direction of travel, the tangential magnetic field has magnetic poles between adjacent apertures in the plurality of apertures.

3. The ion implantation apparatus according to claim 1 or 2, wherein, Each of the second electrodes is a cup-shaped electrode. The magnetic field generator is configured to generate a magnetic field that cuts through the space surrounded by the cup-shaped electrode as the second magnetic field.

4. The ion implantation apparatus according to claim 1, wherein, The plurality of apertures of the first electrode and the plurality of second electrodes are arranged along a first direction orthogonal to the direction of travel.

5. The ion implantation apparatus according to claim 4, wherein, The magnetic field generator has the following features: A plurality of first permanent magnets are arranged along a first direction such that, when viewed toward the direction of travel, the plurality of apertures are respectively disposed between two first permanent magnets to generate the first magnetic field; and A plurality of second permanent magnets are arranged along the first direction such that, when viewed toward the direction of travel, the plurality of second electrodes are respectively disposed between two second permanent magnets to generate the second magnetic field.

6. The ion implantation apparatus according to claim 5, wherein, The two first permanent magnets are configured to have different magnetic poles facing the first electrode. The two second permanent magnets are configured to have different magnetic poles facing the first electrode.

7. The ion implantation apparatus according to claim 5, wherein, The two first permanent magnets are configured to have different magnetic poles facing the first electrode. The two second permanent magnets are configured such that their different magnetic poles face each other.

8. The ion implantation apparatus according to claim 5, wherein, The direction of the magnetic pole of the second permanent magnet is defined such that the first permanent magnet and the second permanent magnet enhance each other's magnetic field in the space upstream of the first electrode and adjacent to the first beam irradiation surface in the direction of travel.

9. The ion implantation apparatus according to claim 5, wherein, The magnetic field generator has a magnetic yoke connecting the plurality of first permanent magnets and the plurality of second permanent magnets.

10. The ion implantation apparatus according to claim 9, wherein, The magnetic yoke is positioned downstream of the first electrode in the direction of travel, and has a front side facing the first electrode and a back side facing the side opposite to the first electrode. The plurality of first permanent magnets are disposed on the front side of the yoke, and the plurality of second permanent magnets are disposed on the back side of the yoke.

11. The ion implantation apparatus according to claim 4, wherein, The plurality of apertures each have an aperture width in the first direction and an aperture length in a second direction orthogonal to the ion beam travel direction and the first direction, wherein the aperture length is longer than the aperture width.

12. The ion implantation apparatus according to claim 4, wherein, The dimension of the ion beam in the first direction is smaller than the dimension of the first electrode in the first direction, and larger than the dimension of each of the plurality of apertures in the first direction.

13. The ion implantation apparatus according to any one of claims 4 to 12, further comprising: A beam scanner that applies at least one of an electric field and a magnetic field to the ion beam by being positioned upstream of the first electrode in the direction of travel of the ion beam, thereby enabling it to scan the ion beam in the first direction.

14. The ion implantation apparatus according to claim 1, wherein, The beam current measuring device includes: A first current detector, electrically connected to the first electrode, detects ions from the ion beam irradiated onto the first beam irradiation surface as the first ion beam current; and The second current detector is electrically connected to the plurality of second electrodes respectively, and detects the ions of the ion beam irradiated on the second beam irradiation surface as the second ion beam current.

15. A beam current measuring device, comprising: The first electrode has a first beam irradiation surface, detects ions of an ion beam irradiating the first beam irradiation surface, and has a plurality of apertures formed on the first beam irradiation surface in a predetermined configuration. A plurality of second electrodes are disposed downstream of the first electrode in the direction of ion beam travel and respectively correspond to the plurality of apertures. Each of the plurality of second electrodes has a second beam irradiation surface, and each detects ions of the ion beam that pass through the plurality of apertures and irradiate the respective second beam irradiation surface of the plurality of second electrodes; and The magnetic field generator is configured to apply a first magnetic field that suppresses the inflow of electrons into and outflow of electrons from the first electrode, and a second magnetic field that suppresses the inflow of electrons into and outflow of electrons from each of the plurality of second electrodes.

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