Method and system for eliminating influence of busbar structure difference on current distribution of IGBT (Insulated Gate Bipolar Translator) device
By acquiring the structural parameters of the busbar and IGBT devices, measuring the mutual inductance parameters, and calculating the mutual inductance offset coefficient, the influence of busbar structural differences on the current distribution of IGBT devices was eliminated, realizing cross-platform reproduction and current sharing research of IGBT device current distribution.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-12
- Publication Date
- 2026-03-17
AI Technical Summary
Existing technologies have failed to effectively eliminate the impact of busbar structure differences on IGBT device current distribution, resulting in significant differences in IGBT device current distribution results on different test platforms, making it difficult to reproduce across platforms and hindering a unified understanding of the influence of IGBT device current distribution.
By acquiring the structural parameters of the target busbar and the IGBT device, selecting the chip branch as the reference branch, measuring the mutual inductance parameters of the busbar-reference branch pair, and calculating the mutual inductance offset coefficient, the influence of the busbar is eliminated, thereby achieving balanced current distribution in each chip branch of the IGBT device.
This study achieved cross-platform reproduction of the impact of current distribution in IGBT devices, reduced current differences, and provided a theoretical basis for the study of current sharing in IGBT devices.
Smart Images
Figure CN121681978A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of IGBT device technology, and in particular to a method and system for eliminating the influence of busbar structure differences on current distribution in IGBT devices. Background Technology
[0002] IGBTs (Insulated Gate Bipolar Transistors), as core components in power electronic devices, are widely used in various flexible DC transmission projects due to their ease of driving and low on-state voltage drop. They are essential components for modern power conversion and transmission. With the increasing current capacity requirements of high-power power conversion systems, multi-chip parallel connection technology has become an effective means to improve the power density of IGBT devices. However, the parallel connection method leads to uneven current distribution among the chips, affecting device reliability and reducing the upper limit of the parallel device's capacity.
[0003] Among the many factors affecting current sharing in parallel IGBT devices, besides internal factors such as chip parameters and parasitic parameters, the external busbar also influences current distribution through mutual inductance. Because the busbar affects the current distribution of IGBT devices, researchers obtaining significantly different results from current sharing tests on the same IGBT device on test platforms with different spatial structures make it difficult to corroborate conclusions drawn from the same influencing factor on different test platforms. This severely hinders a unified understanding of the influence of the busbar on current distribution in IGBT devices.
[0004] Currently, academic research on the impact of busbars on IGBT current distribution remains largely at the circuit analysis level, without in-depth analysis of the specific effects of busbar structure on IGBT current distribution. Furthermore, the extraction of mutual inductance between the busbar and IGBT devices often relies on three-dimensional finite element electromagnetic simulation software. This method is highly specific and struggles to reveal the common patterns of influence of busbars with different spatial structures on devices. Consequently, it cannot propose a universal method for eliminating busbar influence, and no researcher has yet systematically summarized a complete process for eliminating busbar influence. Summary of the Invention
[0005] The purpose of this application is to provide a method and system for eliminating the influence of busbar structure differences on IGBT device current distribution, which can eliminate the influence of busbar mutual inductance on IGBT current distribution, so that the conclusions obtained from the same IGBT current distribution influencing factors can be reproduced across platforms.
[0006] To achieve the above objectives, this application provides the following solution: In a first aspect, this application provides a method for eliminating the influence of busbar structure differences on the current distribution of IGBT devices, the method comprising: Obtain the busbar structure parameters of the target busbar, wherein the target busbar includes at least one vertical branch and at least one horizontal branch; A chip branch is selected from the IGBT device as a reference branch. The IGBT device includes multiple chip branches arranged in parallel. The reference branch includes a vertical reference branch and a horizontal reference branch. The first parameter of the busbar-reference branch pair is measured, wherein the busbar-reference branch pair includes a first mutual inductance pair formed by the vertical branch of the reference branch and the vertical branch of the busbar, and a second mutual inductance pair formed by the horizontal branch of the reference branch and the horizontal branch of the busbar; the first parameter includes a first spatial parameter of the first mutual inductance pair and a second spatial parameter of the second mutual inductance pair. The second parameter of the busbar-reference branch pair is calculated based on the first parameter. The second parameter includes the first projection parameter of the first spatial parameter in the direction of the vertical branch current of the reference branch, the second projection parameter of the second spatial parameter in the direction of the horizontal branch current of the reference branch, and the horizontal distance between the vertical branch of the reference branch and the vertical branch of the busbar in the first mutual inductance pair. Calculate the mutual inductance offset coefficient between the target busbar and the target IGBT device based on the busbar structure parameters, the first parameter, and the second parameter; The branch current of each chip branch in the IGBT device after eliminating the influence of the busbar is calculated based on the mutual inductance offset coefficient.
[0007] Secondly, this application provides a system for eliminating the influence of busbar structure differences on the current distribution of IGBT devices. The system for eliminating the influence of busbar structure differences on the current distribution of IGBT devices includes: The parameter acquisition module is used to acquire the busbar structure parameters of the target busbar, wherein the target busbar includes at least one vertical branch and at least one horizontal branch. A reference branch determination module is used to select a chip branch from an IGBT device as a reference branch. The IGBT device includes multiple chip branches arranged in parallel. The reference branch includes a vertical reference branch and a horizontal reference branch. The parameter measurement module is used to measure the first parameter of the busbar-reference branch pair, wherein the busbar-reference branch pair includes a first mutual inductance pair formed by the vertical branch of the reference branch and the vertical branch of the busbar, and a second mutual inductance pair formed by the horizontal branch of the reference branch and the horizontal branch of the busbar; the first parameter includes a first spatial parameter of the first mutual inductance pair and a second spatial parameter of the second mutual inductance pair. The data calculation module is used to calculate the second parameter of the busbar-reference branch pair based on the first parameter. The second parameter includes a first projection parameter of the first spatial parameter in the direction of the vertical branch current of the reference branch, a second projection parameter of the second spatial parameter in the direction of the horizontal branch current of the reference branch, and the horizontal distance between the vertical branch of the reference branch and the vertical branch of the busbar in the first mutual inductance pair. The module also calculates the mutual inductance offset coefficient between the target busbar and the target IGBT device based on the busbar structural parameters, the first parameter, and the second parameter. Finally, the module calculates the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar based on the mutual inductance offset coefficient.
[0008] Thirdly, this application provides a computer device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the method described above for eliminating the influence of busbar structure differences on IGBT device current distribution.
[0009] Fourthly, this application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method described above for eliminating the influence of busbar structure differences on IGBT device current distribution.
[0010] Fifthly, this application provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the method described above for eliminating the influence of busbar structure differences on IGBT device current distribution.
[0011] According to the specific embodiments provided in this application, the following technical effects are disclosed: This application provides a method and system for eliminating the influence of busbar structure differences on IGBT device current distribution. First, a chip branch in the IGBT device is selected as a reference branch. Based on this reference branch, spatial parameters between the target busbar and the reference branch are measured and obtained. These spatial parameters are used to describe the spatial relationship between the IGBT device and the target busbar, and the corresponding projection parameters and the horizontal distance between the vertical branch of the reference branch and the vertical branch of the busbar are calculated. Second, the mutual inductance offset coefficient between the target busbar and the target IGBT device is calculated based on the above data. Finally, the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar is calculated based on the mutual inductance offset coefficient. This eliminates the influence of busbar mutual inductance on IGBT current distribution, allowing conclusions obtained from the same IGBT current distribution influencing factors to be reproduced across platforms, providing a theoretical basis for IGBT device current sharing research. Attached Figure Description
[0012] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0013] Figure 1 This is a flowchart illustrating a method for eliminating the influence of busbar structure differences on IGBT device current distribution in one embodiment of this application. Figure 2 This is a flowchart illustrating the application of a method for eliminating the influence of busbar structure differences on IGBT device current distribution in an experimental platform according to an embodiment of this application. Figure 3 This is a schematic diagram of the relative spatial relationship between the IGBT device and the target busbar in a method for eliminating the influence of busbar structure differences on the current distribution of IGBT devices in an embodiment of this application. Figure 4 This is a schematic diagram of the test results of an experimental platform for a method to eliminate the influence of busbar structure differences on the current distribution of IGBT devices according to an embodiment of this application. Detailed Implementation
[0014] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0015] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0016] First Embodiment like Figure 1 As shown, this application provides a method for eliminating the influence of busbar structure differences on IGBT device current distribution, including the following steps S101 to S106. Wherein: Step S101: Obtain the busbar structure parameters of the target busbar, wherein the target busbar includes at least one vertical branch and at least one horizontal branch; in step S101, obtaining the busbar structure parameters of the target busbar includes obtaining the number of vertical branches, the number of horizontal branches, and the width of the target busbar. As an optional implementation method, such as... Figure 3 As shown, the busbar has three vertical branches and three horizontal branches.
[0017] Step S102: Select a chip branch from the IGBT device as a reference branch. The IGBT device includes multiple chip branches connected in parallel. The reference branch includes a vertical reference branch and a horizontal reference branch. The method for selecting a chip branch from the IGBT device as a reference branch in step S102 includes: determining the reference branch of the target IGBT device according to preset selection conditions. The preset selection conditions are: selecting a chip branch located at the center of the target IGBT device and having a preset distance from the target busbar as the reference branch. The principle of setting the selection conditions is to select a branch located at the center of the IGBT device and maintaining a relatively large distance from the target busbar as a reference. This selection condition can effectively reduce calculation errors. The reference branch of the IGBT device is as follows: Figure 3 As shown, according to electromagnetic field theory, there is no magnetic coupling between vertical conductors. Therefore, the mutual inductance between the busbar and the IGBT device can be decomposed into the mutual inductance between the vertical branch components and the mutual inductance between the horizontal branch components. That is, the mutual inductance between the busbar and the IGBT device can be divided into two types: one is the mutual inductance between the IGBT chip branch (vertical branch) and the busbar vertical branch, and the other is the mutual inductance between the IGBT collector and emitter plates (horizontal branch) and the busbar horizontal branch.
[0018] Step S103: Measure the first parameter of the busbar-reference branch pair, wherein the busbar-reference branch pair includes a first mutual inductance pair formed by the vertical branch of the reference branch and the vertical branch of the busbar, and a second mutual inductance pair formed by the horizontal branch of the reference branch and the horizontal branch of the busbar; the first parameter includes a first spatial parameter of the first mutual inductance pair and a second spatial parameter of the second mutual inductance pair.
[0019] It is understood that, since there are multiple vertical branches and horizontal branches of the busbar in this embodiment, there are multiple first mutual inductance pairs and second mutual inductance pairs. That is, each vertical branch of the busbar forms a first mutual inductance pair with the vertical branch of the reference branch, and each horizontal branch of the busbar forms a second mutual inductance pair with the horizontal branch of the reference branch.
[0020] In step S103 of this application embodiment, the measurement of the first parameter of the busbar-reference branch pair includes measuring the first spatial parameter and measuring the second spatial parameter, wherein, for each first mutual inductance pair and each second mutual inductance pair, as follows: Figure 3 As shown: The first spatial parameter includes the first spatial distance between the first mutual inductance pairs. Second spatial distance Third space distance and the distance to the fourth space ;in, The first spatial distance between the first mutual induction pairs The distance between the current injection point of the reference branch vertical branch and the current injection point of the busbar vertical branch; the second spatial distance of the first mutual inductance pair. The distance between the current outflow point of the reference branch vertical branch and the current injection point of the busbar vertical branch; the third spatial distance of the first mutual inductance pair. The distance between the current injection point of the reference branch vertical branch and the current outflow point of the busbar vertical branch; the fourth spatial distance of the first mutual inductance pair. This refers to the distance between the current outflow point of the reference branch vertical branch and the current outflow point of the busbar vertical branch. It should be noted that... Figure 3 In the left-hand diagram, the solid lines in the IGBT device represent the current flowing through the vertical branch of the chip branch, and the arrows indicate the direction of the current, that is, from the current injection point of the vertical branch of the chip branch to the current outflow point of the vertical branch of the chip branch. The same applies to the direction of the current flowing through the vertical branch of the busbar.
[0021] The second spatial parameter includes the first spatial distance of the second mutual inductance pair. Second spatial distance Third space distance and the distance to the fourth space ;in, The first spatial distance of the second mutual induction pair The distance between the current injection point of the reference branch horizontal branch and the current outflow point of the busbar horizontal branch; the second spatial distance of the second mutual inductance pair. The distance between the current outflow point of the reference branch horizontal branch and the current outflow point of the busbar horizontal branch; the third spatial distance of the second mutual inductance pair. The distance between the current injection point of the reference branch horizontal branch and the current injection point of the busbar horizontal branch; the fourth spatial distance of the second mutual inductance pair. This refers to the distance between the current outflow point of the reference branch horizontal line and the current injection point of the busbar horizontal line. It should be noted that... Figure 3 In the diagram on the right, the solid lines in the IGBT device represent the current flowing through the horizontal branch of the chip branch, and the arrows indicate the direction of the current, that is, from the current injection point of the horizontal branch of the chip branch to the current outflow point of the horizontal branch of the chip branch. The same applies to the direction of the current flowing through the horizontal branch of the busbar.
[0022] Step S104: Calculate the second parameter of the busbar-reference branch pair based on the first parameter. The second parameter includes the first projection parameter of the first spatial parameter in the direction of the vertical branch current of the reference branch, the second projection parameter of the second spatial parameter in the direction of the horizontal branch current of the reference branch, and the horizontal distance between the vertical branch of the reference branch and the vertical branch of the busbar in the first mutual inductance pair.
[0023] In step S104 of this application embodiment, calculating the second parameter of the busbar-reference branch pair based on the first parameter includes calculating the first projection parameter based on the first spatial parameter and calculating the second projection parameter based on the second spatial parameter, wherein: The first projection parameter includes the first spatial distance of the first mutual inductance pair. The first projected distance in the vertical branch current direction of the reference branch, and the second spatial distance of the first mutual inductance pair. The second projected distance in the direction of the vertical branch current of the reference branch, and the third spatial distance of the first mutual inductance pair. The third projected distance in the vertical branch current direction of the reference branch and the fourth spatial distance of the first mutual inductance pair. The fourth projected distance in the direction of the vertical branch current of the reference branch; The second projection parameter includes the first spatial distance of the second mutual inductance pair. The first projected distance in the direction of the horizontal branch current of the reference branch, and the second spatial distance of the second mutual inductance pair. The second projected distance in the direction of the horizontal branch current of the reference branch, and the third spatial distance of the second mutual inductance pair. The third projected distance in the direction of the horizontal branch current of the reference branch and the fourth spatial distance of the second mutual inductance pair. The fourth projected distance in the direction of the horizontal branch current of the reference branch.
[0024] It should be noted that, although Figure 3 The projection distance is not shown in the image, but it can be determined based on... Figure 3 The projection distance is calculated based on spatial geometric relationships. The calculation method for the above projection distance is existing technology and will not be elaborated upon here. Furthermore, the horizontal distance between the reference branch vertical branch and the busbar vertical branch... It can also be calculated from spatial geometric relationships, specifically as follows: Figure 3 As shown in the left-hand diagram.
[0025] Step S105: Calculate the mutual inductance offset coefficient between the target busbar and the target IGBT device based on the busbar structure parameters, the first parameter, and the second parameter.
[0026] In step S105 of this application embodiment, the calculation formula for calculating the mutual inductance offset coefficient between the target busbar and the target IGBT device based on the busbar structure parameters, the first parameter, and the second parameter is as follows: ; ; In the formula: Indicates the mutual inductance offset coefficient; Indicates magnetic permeability; Indicates the target busbar width; Indicates the number of vertical branches of the busbar; Indicates the number of horizontal branches of the busbar; Indicates the first The first mutual attraction Spatial distance; Indicates the first The first mutual attraction Projection distance, i.e., the distance from the first mutual inductance pair to the first... The projected distance obtained from spatial distance calculation; Indicates the first The second mutual intuition pair Spatial distance; Indicates the first The second mutual intuition pair Projection distance, i.e., the distance between the second mutual inductance pairs... The projected distance obtained from spatial distance calculation; Indicates the first The horizontal distance between the vertical branch of the first mutual inductance reference branch and the vertical branch of the busbar.
[0027] Step S106: Calculate the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar based on the mutual inductance offset coefficient.
[0028] In step S106 of this application embodiment, the calculation formula for calculating the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar based on the mutual inductance offset coefficient is as follows: ; ; ; In the formula: This represents the total current flowing through the IGBT device; These represent the currents flowing through the 1st, 2nd...nth chip branches of the IGBT device, respectively; vectors This represents the measured current distribution vector of each IGBT chip branch; vector This represents a vector indicating the current distribution ratio of each chip branch in the IGBT device after eliminating the influence of the busbar; vector L n Let n be the stray inductance matrix between n chip branches of an IGBT device, and let the vector be... D Let be the vector representing the relative distance between each vertical branch of the IGBT device and the reference branch. E for n identity matrix of order 1, vectorG for n A vector of all 1s.
[0029] It is worth noting that in the calculation formulas for the branch currents of each chip branch mentioned above, the vector... D This is a vector representing the relative distance between each vertical branch of the IGBT device and the reference branch. Specifically, for any non-reference branch, the vector represents the distance between the vertical branches. Its relative distance to the reference branch is For a reference branch, the relative distance between it and the reference branch is 0.
[0030] By implementing steps S101 to S106 above, firstly, a chip branch is selected from the IGBT device as a reference branch. Based on this reference branch, the spatial parameters between the target busbar and the reference branch are measured and obtained. The spatial parameters are used to describe the spatial relationship between the IGBT device and the target busbar, and the corresponding projection parameters and the horizontal distance between the vertical branch of the reference branch and the vertical branch of the busbar are calculated. Secondly, the mutual inductance offset coefficient between the target busbar and the target IGBT device is calculated based on the above data. Finally, the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar is calculated based on the mutual inductance offset coefficient. This eliminates the influence of busbar mutual inductance on IGBT current distribution, so that the conclusions obtained from the same IGBT current distribution influencing factors can be reproduced across platforms, providing a theoretical basis for IGBT device current sharing research.
[0031] Please see Figure 4 The method for eliminating the influence of busbar structure differences on IGBT current distribution was applied to an IGBT device experimental platform. Experimental platform 1 used a concave busbar as the target busbar, and experimental platform 2 used a convex busbar as the target busbar. The same IGBT devices were selected for testing, and the testing procedure is as follows: Figure 2 As shown, the test method adopted is the method described in this embodiment for eliminating the influence of busbar structure differences on IGBT device current distribution. The test results are as follows. Figure 4 As shown in the test results, the current difference between the two platforms before the busbar influence was eliminated was reduced from 13.5% to 0.7%, thus effectively eliminating the interference of busbar structure differences between different test platforms on IGBT current distribution. This avoids the inconsistent impact of the same influencing factor on IGBT devices due to different platform structures, solves the problem of cross-platform verification of conclusions in traditional research, and realizes cross-platform reproduction and verification of experimental conclusions.
[0032] Based on the same inventive concept, this application also provides a system for eliminating the influence of busbar structure differences on the current distribution of IGBT devices. The system includes a parameter acquisition module, a reference branch determination module, a parameter measurement module, and a data calculation module. Wherein: The parameter acquisition module is used to acquire the busbar structure parameters of the target busbar, wherein the target busbar includes at least one vertical branch and at least one horizontal branch. A reference branch determination module is used to select a chip branch from an IGBT device as a reference branch. The IGBT device includes multiple chip branches arranged in parallel. The reference branch includes a vertical reference branch and a horizontal reference branch. The parameter measurement module is used to measure the first parameter of the busbar-reference branch pair, wherein the busbar-reference branch pair includes a first mutual inductance pair formed by the vertical branch of the reference branch and the vertical branch of the busbar, and a second mutual inductance pair formed by the horizontal branch of the reference branch and the horizontal branch of the busbar; the first parameter includes a first spatial parameter of the first mutual inductance pair and a second spatial parameter of the second mutual inductance pair. The data calculation module is used to calculate the second parameter of the busbar-reference branch pair based on the first parameter. The second parameter includes a first projection parameter of the first spatial parameter in the direction of the vertical branch current of the reference branch, a second projection parameter of the second spatial parameter in the direction of the horizontal branch current of the reference branch, and the horizontal distance between the vertical branch of the reference branch and the vertical branch of the busbar in the first mutual inductance pair. The module also calculates the mutual inductance offset coefficient between the target busbar and the target IGBT device based on the busbar structural parameters, the first parameter, and the second parameter. Finally, the module calculates the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar based on the mutual inductance offset coefficient.
[0033] Second Embodiment The second embodiment of this application discloses a method for deriving the formula for calculating the mutual inductance offset coefficient in the first embodiment. The method for deriving the formula for calculating the mutual inductance offset coefficient includes the following steps: Step 1: Use four spatial parameters to describe the spatial relationship between conductor k and conductor m. Based on this spatial relationship, the mutual inductance formula between conductor k and conductor m is expressed as: ; In the formula: , , and The spatial parameters represent the distances between the current injection point of conductor k and the injection point of conductor m, the distances between the current outflow point of conductor k and the injection point of conductor m, the distances between the injection point of conductor k and the outflow point of conductor m, and the distances between the outflow point of conductor k and the outflow point of conductor m, respectively. This represents the mutual inductance between conductors k and m; Indicates magnetic permeability, and These represent the current paths of conductors k and m, respectively.
[0034] It should be noted that two conductors k and m of unequal length have four spatial degrees of freedom, therefore at least four spatial parameters are required to fully describe their spatial relationship.
[0035] Step 2: Introduce the function The mutual inductance formula in step one is decomposed into four highly symmetrical parts, each of which is related to only a single spatial parameter. Based on this, the mutual inductance formula in step one is rewritten as follows: ; In the formula, Representing spatial parameters The vertical component.
[0036] Extending the derivation methods of steps one and two above to the mutual inductance between the target busbar and the parallel IGBT devices in this application, in order to accurately describe the spatial relationship between the target busbar and the IGBT devices, a suitable reference branch needs to be selected. Based on this: Step 3: Select a reference branch. Based on the reference branch, determine the spatial parameters of other parallel branches in the IGBT device. After selecting the reference branch, the spatial parameters of other parallel branches can be uniquely determined by their relative spatial parameters to the reference branch. The relevant function expression can be expressed as follows: ; In the formula, Indicates the spatial parameters of the reference branch. This indicates the difference in spatial parameters between the target branch and the reference branch.
[0037] Combine the above formula with the function in step two. After simultaneously solving the expressions and performing a Taylor expansion down to the first-order terms, and then performing error analysis, we obtain: ; In the formula: Indicates error.
[0038] Step 4: By analyzing the spatial relationship between the target busbar and the IGBT device, the relative spatial parameters are determined. Converted to relative distance between branches The expression for this transformation relationship is: ; In the formula: Indicates error.
[0039] As we know from prior knowledge, the current distribution of IGBT devices is mainly affected by the difference in mutual inductance between the busbar and each IGBT chip branch, rather than the mutual inductance itself. Based on this conclusion: Step 5: Express the mutual inductance difference between the parallel IGBT chip branch and the target busbar as the mutual inductance difference of the vertical branch component and the mutual inductance difference of the horizontal branch component, where: the mutual inductance difference of the vertical branch component is expressed as: ; In the formula, This represents the mutual inductance difference of the vertical branch components.
[0040] The mutual inductance difference of the horizontal branch components is expressed as: ; In the formula, This represents the mutual inductance difference of the horizontal branch components.
[0041] When extending the mutual inductance between the target busbar and the parallel IGBT devices in this application to two thin conductors k and m, the conductor width needs to be considered. When the conductor width is considered, the original problem changes from solving the mutual inductance between multiple thin conductors to solving the mutual inductance between a rectangular plane and multiple parallel conductors. Under low-frequency conditions, the current density is basically uniform, and the average current path coincides with the geometric center of the busbar; at this time, treating the busbar as a thin conductor has a negligible impact on the accuracy of the mutual inductance calculation. However, when calculating high-frequency currents, the current distribution exhibits significant edge-clustering characteristics, causing the average current path to no longer coincide with the geometric center of the busbar. Assuming the current is completely concentrated at the edge of the busbar, based on this assumption: Step 6: Adjust the distance between the busbar and each IGBT chip branch from the original distance. Increase to equivalent distance After considering the busbar width, the mutual inductance difference of the vertical branch components is expressed as: ; In the formula, This indicates the current transformer error taking into account the busbar width. For the width of the busbar, .
[0042] Regarding step six, it should be noted that, considering the skin effect of both horizontal plates of the IGBT device and the horizontal branch of the busbar, after considering the busbar width, the mutual inductance of the horizontal branch component is basically consistent with the mutual inductance value directly calculated by the calculation model of the mutual inductance difference of the horizontal branch component in step five, and there is no need to consider the correction of the equivalent distance.
[0043] Step 7: Based on the derivation methods in Steps 5 and 6, the mutual inductance difference between the target busbar and each IGBT chip branch is expressed as: ; ; In the formula, vector D This is a vector representing the relative distance between each vertical branch of the IGBT device and the reference branch. The number of vertical branches of the busbar is the same as in the first embodiment. ; The number of horizontal branches of the busbar is the same as in the first embodiment. ; , , Representing the first Parameters of each busbar branch corresponding to the reference branch , , That is, the corresponding parameters of the reference vertical branch and the reference horizontal branch in the first embodiment, including , , , as well as .
[0044] In summary, by implementing steps one through seven, we obtain the formula for calculating the mutual inductance offset coefficient in the first embodiment.
[0045] The second embodiment of this application also discloses a method for deriving the calculation formula of the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar in the first embodiment. The method for deriving the calculation formula of the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar includes the following steps: First, considering the influence of busbar mutual inductance, the current distribution ratio of the chip branch in the IGBT device can be expressed in vector form; where, the vector expression for the current distribution ratio of the chip branch in the IGBT device is: ; in, , , express The current flowing through the parallel chip branches numbered 1, 2, ... n inside the IGBT device, while the total current... It is the sum of the currents flowing into each branch of the device.
[0046] Secondly, the current distribution ratio vector of the chip branch in the above IGBT device is decomposed into two current components: ; In the formula, the first current component is , ; Represents a vector consisting entirely of 1s. This represents the inductance matrix extracted from the IGBT device. This current component depends solely on the layout of the chips within the device and is an inherent characteristic of the IGBT device; it cannot be adjusted by changing the busbar structure.
[0047] The second current component is , ; Represents the identity matrix. This represents the mutual inductance offset coefficient. This current component is jointly determined by the chip layout and the busbar structure. Specifically, the chip layout, as an inherent property, determines the overall trend of the current distribution, while the busbar structure, as an external adjustment variable, only changes the magnitude of the overall trend.
[0048] Finally, by combining the current distribution ratio vector of the chip branches in the IGBT device and the second current component, the calculation formula for the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar is obtained, as follows: ; In the formula, Represents the reference mutual inductance offset coefficient, when When the target busbar is set to zero, it has no effect on the current distribution of the IGBT device. This yields the calculation formula for the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar in the first embodiment.
[0049] In one exemplary embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above-described method embodiments.
[0050] In one exemplary embodiment, a computer-readable storage medium is provided storing a computer program that, when executed by a processor, implements the steps in the above-described method embodiments.
[0051] In one exemplary embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above-described method embodiments.
[0052] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, data stored, data displayed, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data must comply with relevant regulations.
[0053] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM).
[0054] The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.
[0055] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0056] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A method for eliminating the influence of busbar structure difference on the current distribution of an IGBT device, characterized in that, The method for eliminating the influence of busbar structure difference on current distribution of IGBT device comprises: obtaining busbar structure parameters of a target busbar, the target busbar comprising at least one busbar vertical branch and at least one busbar horizontal branch; selecting a chip branch from an IGBT device as a reference branch, the IGBT device comprising a plurality of chip branches arranged in parallel, the reference branch comprising a reference branch vertical branch and a reference branch horizontal branch; measuring first parameters of a busbar-reference branch pair, the busbar-reference branch pair comprising a first mutual inductance pair formed by the reference branch vertical branch and the busbar vertical branch and a second mutual inductance pair formed by the reference branch horizontal branch and the busbar horizontal branch; the first parameters comprising first spatial parameters of the first mutual inductance pair and second spatial parameters of the second mutual inductance pair; calculating second parameters of the busbar-reference branch pair according to the first parameters, the second parameters comprising a first projection parameter of the first spatial parameters in a current direction of the reference branch vertical branch, a second projection parameter of the second spatial parameters in a current direction of the reference branch horizontal branch, and a horizontal distance between the reference branch vertical branch and the busbar vertical branch in the first mutual inductance pair; calculating a mutual inductance offset coefficient between the target busbar and the target IGBT device according to the busbar structure parameters, the first parameters and the second parameters; calculating branch currents of each chip branch in the IGBT device after eliminating the influence of busbar according to the mutual inductance offset coefficient.
2. The method of eliminating the impact of busbar structure difference on IGBT device current sharing according to claim 1, wherein, The obtaining of the busbar structure parameters of the target busbar comprises obtaining the number of busbar vertical branches, the number of busbar horizontal branches and the width of the target busbar.
3. The method of eliminating the impact of busbar structure difference on IGBT device current sharing according to claim 1, wherein, The method for selecting a chip branch from an IGBT device as a reference branch comprises: determining a reference branch of a target IGBT device according to a preset selection condition, the preset selection condition being: selecting a chip branch located at the center of the target IGBT device and having a preset distance from the target busbar as the reference branch.
4. The method of eliminating the impact of busbar structure difference on IGBT device current sharing according to claim 2, wherein, The measuring of the first parameters of the busbar-reference branch pair comprises: measuring the first spatial parameters, the first spatial parameters comprising first spatial distances, second spatial distances, third spatial distances and fourth spatial distances of the first mutual inductance pair; wherein, the first spatial distance of the first mutual inductance pair is a distance between a current injection point of the reference branch vertical branch and a current injection point of the busbar vertical branch; the second spatial distance of the first mutual inductance pair is a distance between a current outflow point of the reference branch vertical branch and the current injection point of the busbar vertical branch; the third spatial distance of the first mutual inductance pair is a distance between the current injection point of the reference branch vertical branch and a current outflow point of the busbar vertical branch; and the fourth spatial distance of the first mutual inductance pair is a distance between the current outflow point of the reference branch vertical branch and the current outflow point of the busbar vertical branch; measuring the second spatial parameters, the second spatial parameters comprising first spatial distances, second spatial distances, third spatial distances and fourth spatial distances of the second mutual inductance pair; wherein, The first spatial distance of the second mutual inductance pair is a distance between a current injection point of the reference branch horizontal branch and a current outflow point of the busbar horizontal branch; the second spatial distance of the second mutual inductance pair is a distance between the current outflow point of the reference branch horizontal branch and the current outflow point of the busbar horizontal branch; the third spatial distance of the second mutual inductance pair is a distance between the current injection point of the reference branch horizontal branch and the current injection point of the busbar horizontal branch; and the fourth spatial distance of the second mutual inductance pair is a distance between the current outflow point of the reference branch horizontal branch and the current injection point of the busbar horizontal branch.
5. The method of eliminating the impact of busbar structure difference on IGBT device current sharing according to claim 4, wherein, The calculating the second parameter of the busbar-reference branch pair according to the first parameter comprises: calculating a first projection parameter according to the first spatial parameter, the first projection parameter comprising a first projection distance of the first spatial distance of the first mutual inductance pair in the current direction of the reference branch vertical branch, a second projection distance of the second spatial distance of the first mutual inductance pair in the current direction of the reference branch vertical branch, a third projection distance of the third spatial distance of the first mutual inductance pair in the current direction of the reference branch vertical branch, and a fourth projection distance of the fourth spatial distance of the first mutual inductance pair in the current direction of the reference branch vertical branch; calculating a second projection parameter according to the second spatial parameter, the second projection parameter comprising a first projection distance of the first spatial distance of the second mutual inductance pair in the current direction of the reference branch horizontal branch, a second projection distance of the second spatial distance of the second mutual inductance pair in the current direction of the reference branch horizontal branch, a third projection distance of the third spatial distance of the second mutual inductance pair in the current direction of the reference branch horizontal branch, and a fourth projection distance of the fourth spatial distance of the second mutual inductance pair in the current direction of the reference branch horizontal branch.
6. The method of eliminating the impact of busbar structure difference on IGBT device current sharing according to claim 5, wherein, The calculation formula for calculating the mutual inductance offset coefficient between the target busbar and the target IGBT device according to the busbar structure parameter, the first parameter and the second parameter is: ； ； In the formula: Indicates the mutual inductance offset coefficient; Indicates magnetic permeability; Indicates the target busbar width; Indicates the number of vertical branches of the busbar; Indicates the number of horizontal branches of the busbar; Indicates the first The first mutual attraction Spatial distance; Indicates the first The first mutual attraction Projection distance; Indicates the first The second mutual intuition pair Spatial distance; Indicates the first The second mutual intuition pair Projection distance; Indicates the first The horizontal distance between the vertical branch of the first mutual inductance reference branch and the vertical branch of the busbar.
7. The method of eliminating the impact of busbar structure difference on IGBT device current sharing according to claim 6, wherein, The calculation formula for calculating the branch current of each chip branch in the IGBT device after eliminating the influence of the busbar according to the mutual inductance offset coefficient is: ； ； ； In the formula: represents the total current flowing through the IGBT device; represents the current flowing through the 1st, 2nd, …, nth chip branch in the IGBT device, respectively; vector represents the measured IGBT device chip branch current distribution proportion vector; vector represents the IGBT device chip branch current distribution proportion vector after eliminating the bus influence; vector L n is the stray inductance matrix between the n chip branches of the IGBT device, vector D is the vector of the relative distances between the vertical branches of the IGBT device relative to the reference branch, vector E is the n is the order unit matrix, vector G is the n is a 1 vector of dimension n.
8. A system for eliminating the effect of busbar structure difference on current sharing of IGBT devices, comprising: The system for eliminating the influence of busbar structure difference on IGBT device current distribution comprises: a parameter acquisition module configured to acquire a busbar structure parameter of a target busbar, the target busbar comprising at least one busbar vertical branch and at least one busbar horizontal branch; a reference branch determination module configured to select a chip branch from an IGBT device as a reference branch, the IGBT device comprising a plurality of chip branches arranged in parallel, the reference branch comprising a reference branch vertical branch and a reference branch horizontal branch; a parameter measurement module configured to measure a first parameter of a busbar-reference branch pair, the busbar-reference branch pair comprising a first mutual inductance pair composed of the reference branch vertical branch and the busbar vertical branch, and a second mutual inductance pair composed of the reference branch horizontal branch and the busbar horizontal branch; the first parameter comprising a first spatial parameter of the first mutual inductance pair and a second spatial parameter of the second mutual inductance pair; The data calculation module is configured to calculate a second parameter of the busbar-reference branch pair according to the first parameter, the second parameter including a first projection parameter of the first spatial parameter in a vertical branch current direction of the reference branch, a second projection parameter of the second spatial parameter in a horizontal branch current direction of the reference branch, and a horizontal distance between the reference branch vertical branch and the busbar vertical branch in the first mutual inductance pair; calculate a mutual inductance offset coefficient between the target busbar and the target IGBT device according to the busbar structure parameter, the first parameter and the second parameter; and calculate branch currents of each chip branch in the IGBT device after eliminating the influence of the busbar according to the mutual inductance offset coefficient.
9. A computer device comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method for eliminating the influence of busbar structure difference on IGBT device current distribution according to any one of claims 1-7.
10. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the method for eliminating the influence of busbar structure difference on IGBT device current distribution according to any one of claims 1-7.