Broadband Schottky frequency tripling circuit structure and related components

Abstract

The invention discloses a broadband Schottky frequency tripling circuit structure and related components, and relates to the field of signal processing. Two groups of Schottky diode strings which are reversely connected in parallel are integrated on a single radio frequency circuit substrate, and an input split-phase structure and a synthesis output structure are matched, so that independent frequency doubling and power synthesis of two paths of differential signals in a single-chip circuit are realized, the effective power capacity is improved to twice that of a traditional single-channel structure, and the output power is improved. According to the structure, while the power is improved, a complex waveguide network and a plurality of independent radio frequency circuit substrates required by a traditional multi-channel power synthesis technology are avoided, the problems of transmission loss, volume expansion and channel consistency caused by the complex waveguide network and the plurality of independent radio frequency circuit substrates are eliminated, and the unification of high power, broadband, miniaturization and high integration level is really realized.

Description

Technical Field

[0001] This invention relates to the field of signal processing, and in particular to a broadband Schottky third harmonic circuit structure and related components. Background Technology

[0002] Terahertz technology is increasingly widely used in radar communication, imaging security inspection and other fields, among which broadband frequency multiplier circuits are key components. However, current mainstream solid-state broadband Schottky frequency multiplier sources are usually based on a single anti-parallel diode. Due to its inherent junction capacitance and junction resistance characteristics (junction capacitance / junction resistance < 1), it has significant drawbacks such as low power capacity and insufficient output power, making it difficult to meet the high-power signal requirements of broadband terahertz systems.

[0003] To improve output power, a common method is to use multi-channel power combining technology to combine multiple frequency multiplier circuits. However, this introduces significant waveguide transmission loss, increases system size, and is not conducive to integrated applications. At the same time, it has extremely high requirements for the consistency of single-channel circuits, resulting in inherent drawbacks such as high cost and limited performance in practical applications.

[0004] Therefore, how to effectively expand the power capacity on a single circuit substrate has become a technical problem that urgently needs to be solved to promote the development of terahertz broadband systems. Summary of the Invention

[0005] The purpose of this invention is to provide a broadband Schottky tripler circuit structure and related components, which realizes independent frequency multiplication and power synthesis of two differential signals in a single circuit, increasing the effective power capacity to twice that of the traditional single-channel structure and improving the output power.

[0006] In a first aspect, the present invention provides a broadband Schottky third-harmonic circuit structure, comprising:

[0007] Radio frequency circuit substrate;

[0008] The input phase-splitting structure includes an input terminal and two output terminals. It is used to receive the waveguide mode input signal through the input terminal and output two differential signals with equal amplitude and opposite phase through the two output terminals.

[0009] Two mode conversion and matching structures are integrated on the RF circuit substrate. The input terminal of each mode conversion and matching structure is connected to one output terminal of the input phase splitting structure, which is used to convert the received differential signal from waveguide mode to planar circuit transmission mode and perform impedance matching.

[0010] Two sets of anti-parallel Schottky diode strings are integrated on the RF circuit substrate and arranged symmetrically. The input terminal of each set of Schottky diode strings is connected to the output terminal of the corresponding mode conversion and matching structure, and each set of Schottky diode strings includes at least two Schottky diodes connected in series; it can be a single Schottky anode or composed of multiple Schottky anodes connected in the same direction.

[0011] The two output matching networks, each of the output matching networks, are used to process the frequency multiplication signal generated by the corresponding Schottky diode string to adapt it to the input of the synthesized output structure;

[0012] The synthesized output structure has its input terminals connected to two output matching networks, which are used to synthesize the frequency multiplication signals generated by the two sets of Schottky diode strings after processing, and output the third harmonic signal of the waveguide mode.

[0013] Preferably, the input phase splitting structure is an E-plane Y-junction or an E-plane T-junction.

[0014] Preferably, the mode conversion and matching structure includes an input waveguide-suspended microstrip conversion structure and a suspended microstrip matched filter structure connected in sequence.

[0015] Preferably, the suspended microstrip matched filter structure is implemented by one or more combinations of high and low impedance lines, fan-shaped stubs, or quarter-wavelength stubs, and is used for impedance matching and third harmonic cancellation.

[0016] Preferably, the Schottky diode is assembled onto the RF circuit substrate using a hybrid integration process, a flip-chip bonding process, or a monolithic integration process.

[0017] Preferably, the two sets of Schottky diode strings connected in anti-parallel are arranged symmetrically with respect to the central axis of the input phase splitting structure and the center of the combined output structure.

[0018] Preferably, the material of the radio frequency circuit substrate is quartz, aluminum nitride, or ceramic.

[0019] Preferably, the synthesized output structure is connected to a height-reducing waveguide, the cutoff frequency of which is between the fundamental frequency and the third harmonic frequency of the input signal.

[0020] Secondly, the present invention provides a terahertz broadband signal source device, including the broadband Schottky tripler circuit structure as described above; and further including a driving signal source, the output terminal of which is connected to the input terminal of the input phase split structure of the broadband Schottky tripler circuit structure, for providing the input signal to be multiplied.

[0021] Thirdly, the present invention provides an electronic device, including the terahertz broadband signal source device as described above; and further including a signal processing module connected to the terahertz broadband signal source device for processing or applying the third harmonic signal generated by the terahertz broadband signal source device.

[0022] This invention provides a broadband Schottky third-harmonic circuit structure and related components, relating to the field of signal processing. By integrating two sets of anti-parallel Schottky diode strings on a single RF circuit substrate, and in conjunction with an input phase-splitting structure and a synthesized output structure, independent frequency doubling and power combining of two differential signals are achieved within a single circuit, doubling the effective power capacity to twice that of traditional single-channel structures and increasing output power. This structure, while increasing power, avoids the complex waveguide networks and multiple independent RF circuit substrates required by traditional multi-channel power combining techniques, eliminating the transmission loss, size expansion, and channel consistency problems associated with them, truly achieving a unity of high power, broadband, miniaturization, and high integration. Attached Figure Description

[0023] To more clearly illustrate the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 A schematic diagram of the on-chip circuit structure of a broadband Schottky third harmonic circuit provided by the present invention;

[0025] Figure 2 A schematic diagram of the overall circuit structure of a broadband Schottky third harmonic circuit provided by the present invention;

[0026] Figure 3 A schematic diagram of the current in a broadband Schottky third harmonic circuit structure provided by the present invention;

[0027] Figure 4 A schematic diagram of a Schottky diode string with only one Schottky anode on one side, provided by the present invention;

[0028] Figure 5 A schematic diagram of two sets of anti-parallel Schottky diode strings arranged in a circuit according to the present invention;

[0029] Figure 6 This is a schematic diagram of a suspended microstrip matched filter structure provided by the present invention. Detailed Implementation

[0030] The core of this invention is to provide a broadband Schottky tripler circuit structure and related components, which realizes independent frequency multiplication and power synthesis of two differential signals in a single circuit, increasing the effective power capacity to twice that of the traditional single-channel structure and improving the output power.

[0031] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0032] like Figure 1 and Figure 2 In a first aspect, the present invention provides a broadband Schottky third-harmonic circuit structure, comprising:

[0033] Radio frequency circuit substrate;

[0034] The input phase-splitting structure 11 includes an input terminal and two output terminals, used to receive the waveguide mode input signal through the input terminal and output two differential signals with equal amplitude and opposite phase through the two output terminals;

[0035] Two mode conversion and matching structures are integrated on the RF circuit substrate. The input of each mode conversion and matching structure is connected to one output of the input phase split structure 11, which is used to convert the received differential signal from waveguide mode to planar circuit transmission mode and perform impedance matching.

[0036] Two sets of anti-parallel Schottky diode strings 14 are integrated on the RF circuit substrate and arranged symmetrically. The input terminal of each set of Schottky diode strings 14 is connected to the output terminal of the corresponding mode conversion and matching structure, and each set of Schottky diode strings 14 includes at least two Schottky diodes connected in series; they can be a single Schottky anode or composed of multiple Schottky anodes connected in the same direction.

[0037] Two output matching networks, each used to process the frequency multiplication signal generated by the corresponding Schottky diode string 14 to adapt it to the input of the synthesized output structure;

[0038] The synthesized output structure 15 has its input connected to two output matching networks, which are used to synthesize the frequency multiplication signals generated by the two sets of Schottky diode strings 14 after processing, and output the third harmonic signal of the waveguide mode.

[0039] In this embodiment, the input phase splitting structure 11 is disposed on the RF circuit substrate. The function of this structure is to redistribute the amplitude and phase of the waveguide mode input signal from the input terminal. The single-channel waveguide mode signal received by this structure is split into two differential signals (e.g., those with equal amplitude and opposite phase) after passing through a preset distribution network. Figure 3 In and This differential signal has a distinct odd-mode property and can be implemented, but is not limited to, through symmetrical waveguide stubs, coupling structures, or balanced distribution networks. This phase-splitting method ensures that the two signals are naturally in opposite phase when entering the subsequent mode conversion and matching structure, providing the foundation for subsequent symmetrical excitation, balanced frequency doubling, and the final synthesized output within a single substrate.

[0040] In this embodiment, the output of each input phase-splitting structure 11 is connected to a mode conversion and matching structure, which together form two completely symmetrical signal branches. The mode conversion and matching structure is used to gradually convert the mode signal propagating in the waveguide into a planar circuit transmission mode suitable for use on the RF circuit substrate, and in the process, it achieves impedance matching with the input impedance of the Schottky diode string 14. Such mode conversion can be implemented using, but is not limited to, stepped transition structures, microstrip-waveguide transition structures, coplanar waveguide transition structures, etc. The core is to ensure that the differential signal obtained from the phase splitting maintains consistent amplitude and stable phase relationship before entering the diode string. The matching structure uses the geometric parameters of the planar transmission line or local adjustment units to achieve impedance matching between the signal and the input of the diode string, so that the frequency doubling process can operate under near-voltage peak drive conditions.

[0041] In this embodiment, two sets of anti-parallel Schottky diode strings 14 are symmetrically arranged on the RF circuit substrate. Each set of Schottky diode strings 14 consists of at least two Schottky diodes connected in series. The input terminals of each diode string are connected to the output terminals of the corresponding mode conversion and matching structures. Because the input is a differential signal with opposite phase, the two sets of diode strings exhibit symmetrical but opposite current-voltage dynamics in the driving state. The nonlinear characteristics of Schottky diodes enable them to generate harmonic components of various orders under AC excitation, with the third harmonic component being enhanced in the anti-parallel structure (e.g., ...). Figure 3 I1 and I2 in the middle, where Because it uses two sets of diode strings, its equivalent breakdown voltage and power carrying capacity are extended compared to a single diode string or a single diode. Therefore, a high drive amplitude can be maintained within the same substrate without creating additional external channels or independent modules. Figure 4 14 is a series of Schottky diodes with only one Schottky anode on one side. Figure 5 Two sets of anti-parallel Schottky diodes are arranged in the circuit.

[0042] In this embodiment, the output terminals of the two sets of anti-parallel Schottky diode strings 14 are connected to the combined output structure 15. This structure is used to coherently combine the third harmonics generated in the two branches, so that the third harmonic is output in waveguide mode (e.g., Figure 3 In Since the two diode strings generate the same third harmonic frequency and phase after frequency doubling, and originate from symmetrical excitation, the synthesized output structure 15 only needs to provide an energy convergence path suitable for the third harmonic frequency band to achieve synthesis. This structure can, but is not limited to, employ microstrip-waveguide transitions, radiating slots, and waveguide opening coupling designed for the third harmonic, allowing the synthesized harmonic energy to be concentrated and coupled back to the waveguide mode. In this way, a continuous workflow of differential excitation, frequency doubling, and power synthesis is achieved on a single RF circuit substrate, obtaining the third harmonic output. Furthermore, an output matching network can be provided between the synthesized output structure 15 and the corresponding Schottky diode string 14 for signal matching between them.

[0043] In summary, the broadband Schottky tripler circuit structure provided by this invention integrates two sets of anti-parallel Schottky diode strings 14 on a single RF circuit substrate, and, in conjunction with the input phase splitting structure 11 and the synthesized output structure 15, achieves independent frequency multiplication and power synthesis of two differential signals within a single circuit. This doubles the effective power capacity compared to traditional single-channel structures, thereby increasing output power. While increasing power, this structure avoids the complex waveguide networks and multiple independent RF circuit substrates required by traditional multi-channel power combining techniques, eliminating the transmission loss, volume expansion, and channel consistency issues associated with them. It truly achieves a balance between high power, broadband, miniaturization, and high integration.

[0044] As a preferred embodiment, the input phase splitting structure 11 is an E-plane Y-junction or an E-plane T-junction.

[0045] In this embodiment, the input phase splitting structure 11 is an E-plane Y-junction or an E-plane T-junction. This structure is based on the distribution characteristics of the electric field in the waveguide along the E-plane direction. By leading two symmetrical branches out of the main waveguide, the incident waveguide mode signal is naturally split into two outputs with equal amplitude under the action of electromagnetic field boundary conditions. Under the combined action of geometric symmetry and the opposite distribution of the electric field in the E-plane, a differential signal with opposite phase is formed. Both the E-plane Y-junction and the E-plane T-junction can achieve energy equalization while ensuring low reflection, and the symmetrical layout of the branches maintains the balanced excitation state of the two signals, making them suitable as the input phase splitting structure 11 in this embodiment.

[0046] It is important to understand that an E-plane Y-junction or an E-plane T-junction specifically refers to a physical structure in which the main waveguide is bifurcated into two branches in the E-plane (the plane where the electric field vector is located, usually the plane where the wide side of the waveguide is located) of a rectangular waveguide, and their shapes are similar to the letters Y or T, respectively.

[0047] As a preferred embodiment, the mode conversion and matching structure includes an input waveguide-suspended microstrip conversion structure 12 and a suspended microstrip matched filter structure 13 connected in sequence.

[0048] In this embodiment, the mode conversion and matching structure includes an input waveguide-suspended microstrip conversion structure 12 and a suspended microstrip matched filter structure 13 connected in sequence. Utilizing the field pattern relationship between the electromagnetic field distribution at the waveguide port and the quasi-TEM mode of the suspended microstrip transmission line, the waveguide mode gradually evolves into a suspended microstrip mode suitable for planar circuits through a transition section. After completing the mode conversion, the suspended microstrip matched filter structure 13 (e.g., ...) Figure 6 Furthermore, by adjusting the equivalent impedance of the suspended microstrip through preset linewidth variations, segment lengths, or local resonant units, the input terminal forms a matching state consistent with the electrical characteristics of the Schottky diode string 14. At the same time, it provides the necessary bandpass or bandstop characteristics in the frequency doubling operation band, thereby ensuring that the differential signal maintains a stable amplitude and phase relationship before entering the diode string.

[0049] As a preferred embodiment, the suspended microstrip matched filter structure 13 is implemented by one or more combinations of high and low impedance lines, fan-shaped stubs, or quarter-wavelength stubs, for impedance matching and third harmonic cancellation.

[0050] In this embodiment, the suspended microstrip matched filter structure 13 is implemented by one or more combinations of high and low impedance lines, fan-shaped stubs, or quarter-wavelength stubs. This structure is based on the principle that the suspended microstrip transmission line presents different characteristic impedances under different geometric dimensions. By introducing continuous or discrete impedance changes in the signal path, the equivalent input impedance of the transmission line is matched with the input impedance of the Schottky diode string 14. At the same time, the fan-shaped stubs or quarter-wavelength stubs can form specific resonances or short-circuit / open-circuit equivalences at the third harmonic frequency, so that the third harmonic current is suppressed or reflected on the unwanted path. Thus, while completing impedance matching, selective cancellation of the third harmonic is achieved, so that the signal entering the diode string is kept in the predetermined fundamental or differential mode.

[0051] High- and low-impedance lines refer to structures formed by connecting a transmission line with a first characteristic impedance and a transmission line with a second characteristic impedance, where the first characteristic impedance is greater than the second characteristic impedance, used to achieve impedance transformation. Sector stubs / quarter-wavelength stubs refer to transmission line branches of a specific shape (sector) or a specific electrical length (quarter-wavelength), typically used as resonators or to achieve short-circuit / open-circuit functions for filtering or matching.

[0052] As a preferred embodiment, the Schottky diode is assembled onto the RF circuit substrate using a hybrid integration process, a flip-chip bonding process, or a monolithic integration process.

[0053] In this embodiment, the Schottky diode is mounted on the RF circuit substrate using hybrid integration, flip-chip bonding, or monolithic integration processes. Different chip mounting methods achieve a low-parasitic, electrically continuous connection between the diode chip and the suspended microstrip circuit. Hybrid integration uses gold wire bonding or conductive adhesive to achieve physical fixation and electrical conduction between the chip and the circuit. Flip-chip bonding uses solder balls or gold bumps to directly connect the diode chip to the metal pads face down, reducing lead inductance and improving high-frequency performance. Monolithic integration simultaneously processes the transmission line and diode structure on the same substrate, ensuring consistency between the diode and the circuit in terms of materials, electromagnetic environment, and parasitic parameters, thereby guaranteeing stable operation of the frequency multiplier under high-frequency conditions.

[0054] In a preferred embodiment, the two sets of anti-parallel Schottky diode strings 14 are arranged symmetrically with respect to the central axis of the input phase splitting structure 11 and the center of the combined output structure 15.

[0055] In this embodiment, the two sets of anti-parallel Schottky diode strings 14 are symmetrically arranged with respect to the central axis of the input phase splitting structure 11 and the center of the synthesized output structure 15. Utilizing the geometric symmetry of the electromagnetic structure, the two differential signals with equal amplitude and opposite phase from the input phase splitting structure 11 can maintain a completely consistent electrical environment when applied to the paired diode strings. Through this symmetrical arrangement, the two sets of diode strings maintain approximately the same driving conditions, parasitic parameters, transmission paths, and boundary conditions, enabling them to generate third harmonic components with comparable amplitude and consistent phase during the frequency doubling process. This provides a stable phase relationship and equivalent path for the subsequent coherent synthesis of the third harmonic in the synthesized output structure 15, thereby ensuring balanced excitation and symmetrical output of the overall third harmonic structure on a single substrate.

[0056] As a preferred embodiment, the material of the radio frequency circuit substrate is quartz, aluminum nitride, or ceramic.

[0057] In this embodiment, the substrate material for the RF circuit is quartz, aluminum nitride, or ceramic. This selection is based on the dielectric constant, loss tangent, and thermal conductivity of different dielectric materials under high-frequency conditions. Quartz has the characteristics of stable dielectric constant and low loss, which can maintain the consistency of electromagnetic parameters between the suspended microstrip and waveguide coupling structure over a wide frequency range. Aluminum nitride has higher thermal conductivity, which is suitable for the local heat accumulation environment that may occur during diode frequency doubling. The dielectric constant of ceramic materials can be customized according to the process formulation, and it has high mechanical strength, which is beneficial for realizing a smaller-sized high-frequency structure. Regardless of which material is used, the core principle is to provide a stable electromagnetic support and mechanical bearing environment for the high-frequency operation of the suspended microstrip transmission line, mode conversion structure, and Schottky diode through reasonable dielectric parameters.

[0058] In a preferred embodiment, the synthesized output structure 15 is connected to a height reduction waveguide, the cutoff frequency of which is between the fundamental frequency and the third harmonic frequency of the input signal.

[0059] In this embodiment, the synthesized output structure 15 is connected to a height-reducing waveguide. This waveguide lowers its continuous mode cutoff frequency by reducing its height, and the cutoff frequency is designed to be between the fundamental frequency and the third harmonic frequency of the input signal. Therefore, for the fundamental frequency, the height-reducing waveguide is in a cutoff or near-cutoff state, highly suppressing or reflecting the fundamental energy as it enters this segment; while for the third harmonic frequency, the height-reducing waveguide is in the transmittable band, allowing the third harmonic energy to be transmitted outward in waveguide mode. This approach separates the third harmonic generated by the frequency harmonic branch from the fundamental frequency in spatial frequency selection, achieving frequency-selective coupling of the output spectrum. Simultaneously, the height-reducing waveguide maintains impedance continuity at its connection with the synthesized output structure 15 to reduce unnecessary reflections and standing waves, ensuring that the synthesized third harmonic is stably output in waveguide mode.

[0060] Secondly, the present invention provides a terahertz broadband signal source device, including the broadband Schottky tripler circuit structure as described above; it also includes a driving signal source, the output terminal of which is connected to the input terminal of the input phase split structure of the broadband Schottky tripler circuit structure, for providing the input signal to be multiplied.

[0061] Specifically, the terahertz broadband signal source device adopts the broadband Schottky third harmonic circuit structure described above, and further configures a signal driving module as the excitation source for the input. The output of the driving signal source is connected to the input of the input phase-divider structure. When the driving signal source generates the fundamental frequency signal to be multiplied, this signal is injected into the input phase-divider structure as an input signal in waveguide mode. Through the aforementioned phase-divider mechanism, two differential signals with the same amplitude but opposite phase are formed, and then undergo mode conversion, impedance matching, diode frequency multiplication, and third harmonic synthesis processes in sequence within the third harmonic circuit structure. With this configuration, the single-frequency input provided by the driving signal source can be directly converted into a third harmonic output within the same device, giving the entire terahertz broadband signal source device a continuous and compact signal link structure, and enabling integrated high-frequency excitation and frequency multiplication conversion on a single substrate.

[0062] For further details regarding the terahertz broadband signal source device, please refer to the above embodiments; these will not be repeated here.

[0063] Thirdly, the present invention provides an electronic device, including the terahertz broadband signal source device as described above; and further including a signal processing module connected to the terahertz broadband signal source device for processing or applying the third harmonic signal generated by the terahertz broadband signal source device.

[0064] Specifically, the electronic device employs a terahertz broadband signal source device as described above as a high-frequency signal generation unit, and further includes a signal processing module connected to it. After the terahertz broadband signal source device generates a third harmonic output under fundamental frequency excitation, the output is sent to the signal processing module in waveguide mode or adapter interface form. The signal processing module performs subsequent frequency domain analysis, intensity detection, modulation processing, or specific functional applications on the third harmonic signal based on its internal channel structure or processing circuit. This embodiment encapsulates the frequency multiplier structure and the subsequent application module within the same electronic device, ensuring a continuous transmission path for the third harmonic signal from generation to application. It also enables the electronic device to directly acquire terahertz-level broadband signals without the need for an external frequency multiplier unit, meeting the high-frequency processing requirements in different scenarios.

[0065] In this embodiment, the electronic device may be, but is not limited to, a terahertz imaging device, a terahertz radar device, a terahertz communication terminal, a broadband spectrum analyzer, or a security detection device. Its core is to use the third harmonic signal generated by the terahertz broadband signal source device to provide high-frequency excitation or test signals for subsequent signal processing modules, thereby completing functions such as imaging, detection, communication, or spectrum analysis.

[0066] For further details regarding the electronic device, please refer to the above embodiments; this application will not repeat them here.

[0067] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0068] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A broadband Schottky tripler circuit structure, characterized by The application relates to a broadband Schottky tripler circuit structure, which comprises the following components: a radio frequency circuit substrate; an input phase-splitting structure, which comprises an input end and two output ends, is used for receiving an input signal in a waveguide mode through the input end, and outputs two differential signals with equal amplitude and opposite phase through the two output ends; two mode conversion and matching structures, which are integrated on the radio frequency circuit substrate, and the input end of each mode conversion and matching structure is connected to one output end of the input phase-splitting structure, and is used for converting the received differential signal from a waveguide mode into a planar circuit transmission mode and performing impedance matching; two groups of reverse-parallel Schottky diode strings, which are integrated on the radio frequency circuit substrate and are arranged in a symmetrical manner, the input end of each group of Schottky diode strings is connected to the output end of the corresponding mode conversion and matching structure, and each group of Schottky diode strings comprises at least two Schottky diodes connected in series; a single Schottky anode or a plurality of Schottky anodes connected in the same direction in series; two output matching networks, each of which is used for processing a frequency-doubled signal generated by the corresponding Schottky diode string to adapt to the input of a synthetic output structure; and the synthetic output structure, the input end of which is connected to the two output matching networks, is used for synthesizing the processed frequency-doubled signals generated by the two groups of Schottky diode strings, and outputting a third harmonic signal in a waveguide mode. The input phase-splitting structure is an E-plane Y-junction or an E-plane T-junction. The mode conversion and matching structure comprises an input waveguide-suspended microstrip conversion structure and a suspended microstrip matching filter structure connected in sequence. The input waveguide-suspended microstrip conversion structure is used for converting the received differential signal from a waveguide mode into a planar circuit transmission mode. The suspended microstrip matching filter structure is used for filtering and impedance matching of the signal output by the input waveguide-suspended microstrip conversion structure. The suspended microstrip matching filter structure comprises one or more combinations of high-low impedance lines, fan-shaped branches or quarter-wave stubs, and is used for impedance matching and third harmonic elimination. The Schottky diodes are assembled on the radio frequency circuit substrate through a hybrid integrated process, a flip-chip bonding process or a monolithic integrated process.

2. The broadband Schottky tripler circuit structure of claim 1, wherein, The two groups of reverse-parallel Schottky diode strings are symmetrically arranged relative to the central axis of the input phase-splitting structure and the center of the synthetic output structure.

3. The broadband Schottky tripler circuit structure of claim 1, wherein, The material of the radio frequency circuit substrate is quartz, aluminum nitride or ceramic. The synthetic output structure is connected to a reduced-height waveguide, and the cutoff frequency of the reduced-height waveguide is between the fundamental frequency and the third harmonic frequency of the input signal. The application further relates to a terahertz broadband signal source device, which comprises the broadband Schottky tripler circuit structure as claimed in any one of claims 1 to 8, and a driving signal source, the output end of the driving signal source being connected to the input end of the input phase-splitting structure of the broadband Schottky tripler circuit structure, and being used for providing an input signal to be frequency-doubled.

4. The broadband Schottky tripler circuit structure of claim 3, wherein, The application further relates to a signal processing module, which is connected to the terahertz broadband signal source device and is used for processing or applying the third harmonic signal generated by the terahertz broadband signal source device.

5. The broadband Schottky tripler circuit structure of claim 1, wherein, ​ 6. The broadband Schottky tripler circuit structure of claim 1, wherein, ​ 7. The broadband Schottky tripler circuit structure of claim 1, wherein, ​ 8. The broadband Schottky tripler circuit structure of any of claims 1-7, wherein, ​ 9. A terahertz broadband signal source apparatus, characterized by comprising: ​ 10. An electronic device, comprising: ​

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