Image sensor and manufacturing method thereof

Abstract

The invention provides an image sensor and a manufacturing method thereof, the image sensor comprises a transition area and a cutting area surrounding the transition area, the cutting area is provided with a metal bonding pad, and the transition area is provided with a substrate, a resin layer, a lens structure and an anti-reflection layer which are stacked in sequence. The resin layer located in the transition area has a recess away from the cutting area and a protrusion toward the cutting area, and the protrusion is located on the side, away from the substrate, of the recess. In other words, the bottom of the resin layer located in the transition area is concave inwards, the protrusions located at the top of the resin layer located in the transition area can still support the anti-reflection layer, and the inwards-hollowed degree of the resin layer located in the transition area is low, so that the anti-reflection layer located in the transition area is prevented from falling off, and finally the defects of the image sensor are reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor, in particular to an image sensor and a manufacturing method thereof. BACKGROUND

[0002] The image sensor includes a core region capable of imaging, a dummy region surrounding the core region, and a cutting region surrounding the dummy region. In the process of manufacturing the image sensor, after forming an anti-reflection layer in the core region, the dummy region and the cutting region of the image sensor, it is necessary to remove the anti-reflection layer of the cutting region and the resin layer covered by the anti-reflection layer. In the process of removing the resin layer of the cutting region, the resin layer of the dummy region will also be damaged, that is, there is a situation of the resin layer of the dummy region being scooped out. The situation of the resin layer being scooped out is relatively serious, which causes the anti-reflection layer of the resin layer covering the dummy region to fall off, and further causes the image sensor manufactured to have defects. SUMMARY

[0003] Therefore, the purpose of the present application is to provide an image sensor and a manufacturing method thereof, which can reduce the scooping-out degree of the resin layer in the dummy region, avoid the anti-reflection layer from falling off, and reduce the defects of the image sensor.

[0004] The present application provides an image sensor, which includes a dummy region and a cutting region surrounding the dummy region.

[0005] The cutting region is provided with a metal pad, and the dummy region is provided with a substrate, a resin layer, a lens structure and an anti-reflection layer which are stacked in sequence.

[0006] The resin layer in the dummy region has a recess away from the cutting region and a protrusion towards the cutting region, and the protrusion is located on the side of the recess away from the substrate.

[0007] Optionally, the maximum horizontal distance between the recess and the cutting region is less than or equal to 0.6 microns.

[0008] Optionally, the resin layer includes a color layer and a glue coating layer, and the glue coating layer is located on the side of the color layer away from the substrate.

[0009] Optionally, along the direction from the glue coating layer towards the substrate, the horizontal distance between the sidewall of the glue coating layer in the dummy region and the cutting region gradually increases.

[0010] Optionally, a horizontal distance between a sidewall of the glue layer at the transition region and the cutting region is a first distance, and a horizontal distance between a sidewall of the color layer at the transition region and the cutting region is a second distance, the first distance being less than or equal to the second distance.

[0011] Optionally, a sidewall of the resin layer at the transition region is a flat surface, a multi-fold surface, or a curved surface.

[0012] The present application provides a method for manufacturing an image sensor, the image sensor including a transition region and a cutting region surrounding the transition region, the image sensor including a substrate and a resin layer stacked one on top of the other;

[0013] The method includes:

[0014] In a direction from the resin layer toward the substrate, a first etching gas is used to etch a portion of the thickness of the resin layer at the cutting region using a target bias voltage, and a second etching gas is used to etch the remaining thickness of the resin layer to expose the metal pad, such that the resin layer at the transition region has a recess away from the cutting region and a protrusion toward the cutting region, the protrusion being on a side of the recess away from the substrate.

[0015] Optionally, the second etching gas is controlled such that a maximum horizontal distance between the recess and the cutting region is less than or equal to 0.6 microns.

[0016] Optionally, the thickness of the protrusion is controlled by controlling the thickness of the resin layer etched by the first etching gas and the second etching gas.

[0017] Optionally, the first etching gas includes at least argon, and the second etching gas includes at least oxygen.

[0018] The present application provides an image sensor, the image sensor including a transition region and a cutting region surrounding the transition region, the cutting region being provided with a metal pad, and the transition region being provided with a substrate, a resin layer, a lens structure, and an anti-reflection layer stacked one on top of the other. The resin layer at the transition region has a recess away from the cutting region and a protrusion toward the cutting region, the protrusion being on a side of the recess away from the substrate. That is, the bottom of the resin layer at the transition region is concave, the protrusion at the top of the resin layer at the transition region is still able to support the anti-reflection layer, the resin layer at the transition region is less hollow, thereby avoiding the anti-reflection layer at the transition region from falling off, and ultimately reducing defects of the image sensor. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to make the technical solutions in the embodiments of the present application clearer, the accompanying drawings needed in the embodiment description will be briefly introduced. Obviously, the accompanying drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0020] Figure 1 A cross-sectional structure schematic diagram of an image sensor is shown;

[0021] Figure 2 A flowchart of a manufacturing method of an image sensor is shown;

[0022] Figure 3 A top view structure schematic diagram of an image sensor is shown;

[0023] Figures 4-9 A structure schematic diagram of an image sensor manufactured by a manufacturing method of an image sensor is shown. DETAILED DESCRIPTION

[0024] In order to make the technical solutions in the embodiments of the present application clearer, the accompanying drawings needed in the embodiment description will be briefly introduced. Obviously, the accompanying drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0025] In the following description, many specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced without the specific details. In other instances, well-known methods, procedures and components have not been described in detail so as not to obscure the present application. As such, the present application is not intended to be limited to the embodiments described herein.

[0026] The present application is described in detail in conjunction with the schematic diagrams. In the detailed description of the embodiments of the present application, the cross-sectional diagrams of the device structure are partially enlarged without the general proportion for the convenience of description, and the schematic diagrams are only examples, which should not limit the scope of protection of the present application. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in the actual manufacture.

[0027] The image sensor does not have photoelectric conversion effect in the transition area and the cutting area except the core area of imaging. The metal pad is arranged in the cutting area, and the metal pad can realize electrical lead-out of the image sensor. Therefore, after the anti-reflection layer is formed in the transition area and the cutting area of the image sensor, the anti-reflection layer in the cutting area and the resin layer covered by the anti-reflection layer need to be removed to expose the metal pad.

[0028] In the process of removing the resin layer in the cutting area, in order to avoid damage to the metal pad, oxygen etching is used to remove the resin layer. However, the oxygen etching of the resin layer is isotropic etching. When the resin layer in the cutting area is removed, the resin layer in the transition area is also damaged, that is, the resin layer in the transition area is undercut. Figure 1 As shown, the resin layer includes a color layer 40 and a glue coating layer 50, Figure 1 It is shown that the color layer 40 and the glue coating layer 50 are arranged on the substrate 30 in the cutting area 10 and the transition area 20, respectively. The lens structure 60 and the anti-reflection layer 70 are further arranged on the glue coating layer 50 in the transition area 20. After the glue coating layer 50 and the color layer 40 in the cutting area 10 are removed, the glue coating layer 50 and the color layer 40 in the transition area 20 are undercut seriously, which causes the anti-reflection layer 70 covering the glue coating layer 50 and the color layer 40 in the transition area 20 to fall off, and further causes the manufactured image sensor to have defects.

[0029] Based on this, the present application provides an image sensor. The image sensor includes a transition area and a cutting area surrounding the transition area. The cutting area is provided with a metal pad, and the transition area is provided with a substrate, a resin layer, a lens structure and an anti-reflection layer which are stacked in sequence. The resin layer in the transition area has a recess away from the cutting area and a protrusion towards the cutting area. The protrusion is located on the side of the recess away from the substrate. That is, the bottom of the resin layer in the transition area is concave. The protrusion on the top of the resin layer in the transition area can still support the anti-reflection layer. The resin layer in the transition area is undercut to a low degree, thereby avoiding the anti-reflection layer in the transition area from falling off, and finally reducing defects of the image sensor.

[0030] In order to better understand the technical solutions and technical effects of the present application, specific embodiments will be described in detail below with reference to the drawings.

[0031] Referring to Figure 2 The figure is a flowchart of a manufacturing method of an image sensor provided by an embodiment of the present application.

[0032] The image sensor provided by the embodiment of the present application includes a core area 110, a transition area 120 and a cutting area 130. Referring to Figure 3As shown. The transition region 120 surrounds the core region 110, and the cutting region 130 surrounds the transition region 120. The core region 110 is the area capable of photoelectric conversion; the core region 110 is the imaging area of ​​the image sensor. Neither the transition region 120 nor the cutting region 130 has photoelectric conversion capabilities. The cutting region 130 is provided with metal pads 250, which are used to implement electrical leads for the image sensor. The transition region 120 serves as a transition between the core region 110 and the cutting region 130. The transition region 120 includes a first sub-region 121 near the cutting region 130 and a second sub-region 122 near the core region 110; that is, the second sub-region 122 is surrounded by the first sub-region 121.

[0033] refer to Figure 4 or Figure 5 As shown, along Figure 3 The diagram shows a cross-sectional structure of an image sensor with a cross-section along the AA direction. In the transition region 120 and the cutting region 130, the image sensor includes a substrate 200 and a resin layer stacked together. The resin layer may include a color layer 210 and a coating layer 220. The coating layer 220 is disposed on the surface of the color layer 210 away from the substrate 200. (Refer to...) Figure 5 As shown. The resin layer may also consist only of the adhesive layer 220, see reference. Figure 4 As shown, the resin layer is made of resin material, while the color layer 210 and the adhesive layer 220 are made of different types of resin materials. In the transition region 120, a lens structure 230 is also provided on the surface of the adhesive layer 220, and an anti-reflective layer 240 is also covered on the lens structure 230, wherein the anti-reflective layer 240 is made of silicon oxide.

[0034] Considering the need to remove the resin layer located in the cutting area 130, expose the metal pads 250 disposed on the surface of the substrate 200, and minimize the degree of indentation of the resin layer located in the transition area 120, and prevent the anti-reflection layer 240 located in the transition area 120 from falling off, the image sensor is manufactured using the image sensor manufacturing method provided in the embodiments of this application.

[0035] The method for manufacturing an image sensor provided in this application includes the following steps:

[0036] S101, along the direction from the resin layer toward the substrate, the first etching gas is controlled by the target bias to etch a portion of the resin layer located in the cutting region.

[0037] In the embodiments of the present application, considering that the damage of the etching process to the resin layer located in the transition area 120 is to be minimized, the first etching gas can be controlled by the target bias to etch the resin layer with a partial thickness located in the cutting area 130 in a preset direction, which can be a direction from the resin layer toward the substrate 200.

[0038] When the resin layer with a partial thickness located in the cutting area 130 is etched by the first etching gas controlled by the target bias, since the etching is performed in a direction from the resin layer toward the substrate 200, the damage to the sidewall of the resin layer located in the transition area 120 during etching can be minimized or even eliminated by controlling the etching direction, thereby reducing the degree of undercutting of the resin layer located in the transition area 120 during etching by the first etching gas.

[0039] Referring to Figure 6 When the resin layer only includes the glue coating layer 220, the glue coating layer 220 with a partial thickness located in the cutting area 130 can be etched by the first etching gas controlled by the target bias in a direction from the glue coating layer 220 toward the substrate 200.

[0040] Referring to Figure 7 When the resin layer includes the color layer 210 and the glue coating layer 220, the glue coating layer 220 and the color layer 210 with a partial thickness located in the cutting area 130 can be etched by the first etching gas controlled by the target bias in a direction from the glue coating layer 220 toward the substrate 200. Alternatively, only the glue coating layer 220 located in the cutting area 130 can be etched by the first etching gas controlled by the target bias in a direction from the glue coating layer 220 toward the substrate 200.

[0041] Specifically, the first etching gas can be an anisotropic etching gas, so that when the first etching gas is used to etch in a direction from the glue coating layer 220 toward the substrate 200, it will not etch in other directions except the direction from the glue coating layer 220 toward the substrate 200. As an example, the first etching gas at least includes argon.

[0042] When the color layer 210 with a partial thickness located in the cutting area 130 is actually etched by the first etching gas, the surface of the lens structure 230 located in the transition area 120 is provided with a patterned first photoresist layer 310, so as to protect the lens structure 230 and the resin layer located in the transition area 120 by the patterned first photoresist layer 310.

[0043] Considering that when etching a portion of the resin layer in the cutting region 130 along the direction from the resin layer toward the substrate 200, it is necessary to minimize damage to the resin layer in the transition region 120, the direction from the resin layer toward the substrate 200 can be vertical or perpendicular to the surface of the substrate 200. When etching a portion of the resin layer in the cutting region 130 in a vertical or perpendicular direction to the surface of the substrate 200, there is almost no damage to the resin layer in the transition region 120, thereby avoiding the resin layer in the transition region 120 being hollowed out.

[0044] Accordingly, the target bias is the bias that controls the first etching gas to etch along the direction from the resin layer toward the substrate 200. The target bias can be adjusted according to the actual situation.

[0045] In practical applications, although etching the resin layer of the entire thickness in the cutting region 130 in a vertical direction or a direction perpendicular to the surface of the substrate 200 will cause almost no damage to the resin layer in the transition region 120, it will damage the metal pads 250 in the cutting region 130. Therefore, only etching a portion of the resin layer in the cutting region 130 in a vertical direction or a direction perpendicular to the surface of the substrate 200 is performed.

[0046] As one possible implementation, when the resin layer includes a coating layer 220 and a color layer 210, in order to further avoid the probability of the metal pad 250 being etched and damaged, the first etching gas can be controlled by the target bias voltage along the direction from the resin layer toward the substrate 200, and only the coating layer 220 located in the cutting region 130 can be etched. The first etching gas is not used to etch the color layer 210 located in the cutting region 130. That is, the full thickness of the color layer 210 is used to protect the metal pad 250 from being etched by the first etching gas.

[0047] In practical applications, since the resin layer is covered by the anti-reflective layer 240, when etching away the resin layer located in the cutting region 130, the anti-reflective layer 240 located in the cutting region 130 is also removed in advance, while the anti-reflective layer 240 located in the transition region 120 is retained.

[0048] S102, the remaining thickness of the resin layer is etched using a second etching gas to expose the metal pads, such that the resin layer in the transition region has a depression away from the cutting region and a protrusion towards the cutting region, with the protrusion located on the side of the depression away from the substrate.

[0049] In embodiments of this application, after etching a portion of the resin layer in the cut region 130 using a first etching gas along the direction from the resin layer toward the substrate 200, the remaining thickness of the resin layer in the cut region 130 can be etched using a second etching gas to expose the metal pads 250 in the cut region 130. (Refer to...) Figure 8 or Figure 9 As shown.

[0050] refer to Figure 8 As shown, when the resin layer only includes the adhesive layer 220, the remaining thickness of the adhesive layer 220 can be etched using a second etching gas to expose the metal pads 250.

[0051] refer to Figure 9 As shown, when the resin layer includes a color layer 210 and a coating layer 220, when the first etching gas is used to etch only the coating layer 220 located in the cutting region 130, the second etching gas can be used to etch the entire thickness of the color layer 210. When the first etching gas is used to etch the coating layer 220 located in the cutting region 130 and a portion of the color layer 210, the second etching gas can be used to etch the remaining thickness of the color layer 210.

[0052] When the second etching gas is used to etch the remaining thickness of the resin layer in the cutting region 130, a patterned second photoresist layer is also provided on the surface of the lens structure 230 in the transition region 120, so as to protect the lens structure 230 and the resin layer in the transition region 120 by using the patterned second photoresist layer. After the etching is completed, the patterned second photoresist layer is removed.

[0053] Specifically, considering that the second etching gas should reduce damage to the metal pads 250, there is no need to increase the bias voltage of the second etching gas, i.e., there is no need to design the etching direction of the second etching gas. The second etching gas is isotropic. Thus, when the second etching gas is used to etch the remaining thickness of the resin layer located in the cutting region 130, it will also etch the resin layer located in the transition region 120, causing the resin layer in the transition region 120 to be hollowed out. As an example, the second etching gas includes at least oxygen.

[0054] Although the resin layer in the transition region 120 is also hollowed out when the second etching gas etches the remaining thickness of the resin layer in the cutting region 130, the degree of hollowing out of the resin layer in the cutting region 130 is low because only a portion of the resin layer in the cutting region 130 is etched using the second etching gas. This results in the resin layer in the transition region 120 having a recess 400 away from the cutting region 130 and a protrusion 500 towards the cutting region. The protrusion 500 is located on the side of the recess 400 away from the substrate 200. In other words, the bottom of the resin layer in the transition region 120 is recessed, and the top of the resin layer is protruding. The top of the resin layer in the transition region 120 can still support the anti-reflective layer 240, thereby preventing the anti-reflective layer 240 in the transition region 120 from falling off and ultimately reducing defects in the image sensor.

[0055] In this process, since the first etching gas causes almost no damage to the resin layer in the transition region 120, and damage begins during the second etching gas etching, the bottom of the resin layer in the transition region 120 is hollowed out to a greater extent than the top, resulting in a protrusion 500 at the top and a depression 400 at the bottom. The top of the transition region 120 is hollowed out less, forming a protrusion 500, which still supports the anti-reflective layer 240 in the transition region 120, preventing it from detaching.

[0056] In the embodiments of this application, the thickness of the protrusion 500 and the maximum horizontal distance between the sidewall of the resin layer in the transition region 120 and the cutting region 130 can be controlled by controlling the thickness of the resin layer etched by the first etching gas and the second etching gas. In other words, the thickness of the protrusion 500 and the degree to which the resin layer in the transition region 120 is hollowed out can be controlled by controlling the thickness of the resin layer etched by the first etching gas and the second etching gas. Specifically, the more the first etching gas etches the resin layer in the cutting region 130, and the less the second gas etches the resin layer in the cutting region 130, the less damage the first etching gas causes to the resin layer in the transition region 120. This results in a thicker protrusion 500, a lower degree of hollowing out of the resin layer in the transition region 120, a lower probability of the anti-reflective layer 240 detaching, and correspondingly, a higher probability of damage to the metal pad 250. The less the resin layer in the cutting region 130 is etched by the first etching gas, the more the resin layer in the cutting region 130 is etched by the second gas. This results in greater damage to the resin layer in the transition region 120 by the first etching gas. The thinner the protrusion 500, the more the resin layer in the transition region 120 is hollowed out. Correspondingly, the probability of damage to the metal pad 250 is also lower.

[0057] As one possible implementation, when the resin layer includes a color layer 210 and a coating layer 220, to further reduce the probability of etching damage to the metal pads 250, the coating layer 220 located in the cutting region 130 can be etched using only the target bias voltage-controlled first etching gas, without using the first etching gas to etch the color layer 210 located in the cutting region 130. That is, the second etching gas can be used to etch the entire thickness of the color layer 210 to expose the metal pads 250. In the embodiments of this application, the maximum horizontal distance between the sidewall of the resin layer located in the transition region 120 and the cutting region 130 is less than a preset threshold, i.e., the maximum horizontal distance between the recess 400 and the cutting region 130 is L1, where L1 is less than or equal to the preset threshold. Figure 8 or Figure 9 As shown, this means that the maximum horizontal length of the resin layer in the transition region 120 that is hollowed out is less than a preset threshold.

[0058] The preset threshold is less than or equal to 0.6 micrometers. Compared with the current method of removing the resin layer in the cutting region 130 by only using the second etching gas, the maximum horizontal length of the resin layer in the transition region 120 being hollowed out is greater than 2.4 micrometers. The embodiment of this application provides that the resin layer in the cutting region 130 is pre-etched by the first etching gas, which can greatly reduce the degree of the resin layer in the transition region 120 being hollowed out, thereby greatly reducing the probability of the anti-reflective layer 240 falling off.

[0059] In embodiments of this application, the horizontal distance between the sidewall of the resin layer in the transition region 120 and the cutting region 130 gradually increases and then decreases along the direction from the resin layer toward the substrate 200. When the resin layer only includes the adhesive layer 220, the horizontal distance between the sidewall of the adhesive layer 220 in the transition region 120 and the cutting region 130 gradually increases and then decreases along the direction from the adhesive layer 220 toward the substrate 200, as referenced. Figure 8 As shown.

[0060] When the resin layer includes a color layer 210 and a coating layer 220, since the coating layer 220 located in the cutting region 130 is less damaged when etched with the first etching gas, the horizontal distance between the sidewall of the coating layer 220 located in the transition region 120 and the cutting region 130 gradually increases along the direction from the coating layer 220 towards the substrate 200. Considering that the remaining color layer 210 may be more likely to be damaged when etched with the second etching gas, the horizontal distance between the sidewall of the coating layer 220 located in the transition region 120 and the cutting region 130 is less than or equal to the horizontal distance between the sidewall of the color layer 210 located in the transition region 120 and the cutting region 130.

[0061] As one possible implementation, when the first etching gas only etches the resist layer 220 and the second etching gas etches the full thickness of the color layer 210, the etching damage of the color layer 210 located in the transition region 120 is greater than or equal to the etching damage of the resist layer 220 located in the transition region 120. At this time, the horizontal distance between the sidewall of the resist layer 220 located in the transition region 120 and the cutting region 130 is the first distance, and the horizontal distance between the sidewall of the color layer 210 located in the transition region 120 and the cutting region 130 is the second distance. The first distance is less than or equal to the second distance.

[0062] As another possible implementation, when the first etching gas etches the resist layer 220 and a portion of the color layer 210, and the second etching gas etches the remaining thickness of the color layer 210, the etching damage of the color layer 210 located in the transition region 120 is greater than or equal to the etching damage of the resist layer 220 located in the transition region 120. At this time, the horizontal distance between the sidewall of the resist layer 220 located in the transition region 120 and the cutting region 130 is the first distance, and the horizontal distance between the sidewall of the color layer 210 located in the transition region 120 and the cutting region 130 is the second distance. The first distance is less than or equal to the second distance.

[0063] In the embodiments of this application, the sidewalls of the resin layer located in the transition region 120 can be planar, multi-faceted, or curved. The specific shape of the sidewalls of the resin layer in the transition region 120 is determined according to the actual etching conditions.

[0064] Therefore, the image sensor manufacturing method provided in this application embodiment utilizes a two-stage etching process to remove the resin layer located in the cutting area. The first etching process uses a first etching gas to etch and remove a portion of the resin layer thickness along the direction from the resin layer towards the substrate. The second etching process uses a second etching gas to remove the remaining resin layer thickness. The combination of the two etching processes can improve the degree of inward hollowing of the resin layer in the transition region, ensuring that the top of the resin layer in the transition region still exists and can still support the anti-reflective layer. This application embodiment uses a two-stage etching process to solve the problem of anti-reflective layer detachment. Compared with other process solutions to prevent anti-reflective layer detachment, it can significantly reduce the manufacturing time of the image sensor and greatly reduce the manufacturing cost.

[0065] Based on the image sensor manufacturing method provided in the above embodiments, this application also provides an image sensor, referencing... Figure 8 or Figure 9 The diagram shown is a cross-sectional structural schematic of an image sensor provided in an embodiment of this application. The image sensor provided in this embodiment includes: a transition region 120 and a cut-out region 130 surrounding the transition region 120. (Refer to...) Figure 3As shown, the image sensor also includes a core region 110. A transition region 120 serves as a transition between the core region 110 and the cutting region 130. The transition region 120 includes a first sub-region 121 near the cutting region 130 and a second sub-region 122 near the core region 110, i.e., the second sub-region 122 is surrounded by the first sub-region 121.

[0066] refer to Figure 8 or Figure 9 As shown, along Figure 3 The diagram shows a cross-sectional structure of an image sensor with a cross-section along the AA direction. A metal pad 250 is provided in the cut region 130 for electrical lead-out of the image sensor. In the transition region 120, the image sensor includes a substrate 200, a resin layer, a lens structure 230, and an anti-reflective layer 240 stacked sequentially. The resin layer may include a color layer 210 and an adhesive layer 220. The adhesive layer 220 is disposed on the surface of the color layer 210 away from the substrate 200. (Refer to...) Figure 9 As shown. The resin layer may also consist only of the adhesive layer 220, see reference. Figure 8 As shown. The resin layer is made of resin, while the color layer 210 and the adhesive layer 220 are made of different types of resin. The anti-reflective layer 240 is made of silicon dioxide.

[0067] The resin layer located in the transition region 120 has a recess 400 away from the cutting region 130 and a protrusion 500 towards the cutting region. The protrusion 500 is located on the side of the recess 400 away from the substrate 200. That is, the bottom of the resin layer in the transition region 120 is concave and the top of the resin layer is convex. The top of the resin layer in the transition region 120 can still support the anti-reflection layer 240, thereby preventing the anti-reflection layer 240 in the transition region 120 from falling off and ultimately reducing defects in the image sensor.

[0068] In the embodiments of this application, the maximum horizontal distance between the sidewall of the resin layer located in the transition region 120 and the cutting region 130 is less than a preset threshold, that is, the maximum horizontal distance between the recess 400 and the cutting region 130 is L1, and L1 is less than or equal to the preset threshold. Figure 8 or Figure 9 As shown, this means that the maximum horizontal length of the resin layer in the transition region 120 that is hollowed out is less than a preset threshold.

[0069] The preset threshold is less than or equal to 0.6 micrometers. Compared with the current method of removing the resin layer in the cutting region 130 by only using the second etching gas, the maximum horizontal length of the resin layer in the transition region 120 being hollowed out is greater than 2.4 micrometers. The embodiment of this application provides that the resin layer in the cutting region 130 is pre-etched by the first etching gas, which can greatly reduce the degree of the resin layer in the transition region 120 being hollowed out, thereby greatly reducing the probability of the anti-reflective layer 240 falling off.

[0070] In the embodiments of this application, the sidewall of the resin layer located in the transition region 120 can be a plane, a multi-faceted surface, or a curved surface.

[0071] As an example, see reference Figure 8 As shown, the resin layer only includes the adhesive layer 220, and the sidewall of the adhesive layer 220 located in the transition region 120 is curved.

[0072] As another example, see Figure 9 As shown, the resin layer includes a color layer 210 and an adhesive layer 220. The sidewalls of the color layer 210 and the adhesive layer 220 located in the transition region 120 are curved surfaces.

[0073] Therefore, the image sensor provided in this application embodiment includes a transition region and a cut-out region surrounding the transition region. The cut-out region is provided with metal pads, and the transition region is provided with a substrate, a resin layer, a lens structure, and an anti-reflective layer stacked sequentially. The resin layer located in the transition region has a recess away from the cut-out region and a protrusion facing the cut-out region, with the protrusion located on the side of the recess away from the substrate. That is, the bottom of the resin layer in the transition region is recessed, while the protrusion at the top of the resin layer in the transition region can still support the anti-reflective layer. The resin layer in the transition region is less recessed, thereby preventing the anti-reflective layer in the transition region from falling off, ultimately reducing defects in the image sensor.

[0074] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.

Claims

1. An image sensor, characterized in that, The image sensor includes a transition region and a cut-out region surrounding the transition region; The cutting area is provided with metal pads; the transition area is provided with a substrate, a resin layer, a lens structure and an anti-reflection layer stacked in sequence. The resin layer located in the transition region has a depression away from the cutting region and a protrusion toward the cutting region, the protrusion being located on the side of the depression away from the substrate.

2. The image sensor according to claim 1, characterized in that, The maximum horizontal distance between the depression and the cut area is less than or equal to 0.6 micrometers.

3. The image sensor according to claim 2, characterized in that, The resin layer includes a color layer and an adhesive layer, with the adhesive layer located on the side of the color layer away from the substrate.

4. The image sensor according to claim 3, characterized in that, Along the direction from the adhesive layer toward the substrate, the horizontal distance between the sidewall of the adhesive layer and the cutting area in the transition region gradually increases.

5. The image sensor according to claim 4, characterized in that, The horizontal distance between the sidewall of the adhesive layer located in the transition region and the cutting region is the first distance, and the horizontal distance between the sidewall of the color layer located in the transition region and the cutting region is the second distance, wherein the first distance is less than or equal to the second distance.

6. The image sensor according to any one of claims 1-5, characterized in that, The sidewalls of the resin layer located in the transition region are planar, multi-faceted, or curved.

7. A method for manufacturing an image sensor, characterized in that, The image sensor includes a transition region and a cut-out region surrounding the transition region, and the image sensor includes a substrate and a resin layer stacked together. The method includes: Along the direction from the resin layer toward the substrate, a first etching gas is used to etch a portion of the resin layer located in the cut region using a target bias voltage; a second etching gas is used to etch the remaining thickness of the resin layer to expose the metal pads, such that the resin layer located in the transition region has a depression away from the cut region and a protrusion toward the cut region, the protrusion being located on the side of the depression away from the substrate.

8. The method according to claim 7, characterized in that, By controlling the second etching gas, the maximum horizontal distance between the recess and the cut area is made less than or equal to 0.6 micrometers.

9. The method according to claim 7, characterized in that, The thickness of the protrusion is controlled by controlling the thickness of the resin layer etched by the first etching gas and the second etching gas.

10. The method according to any one of claims 7-9, characterized in that, The first etching gas includes at least argon, and the second etching gas includes at least oxygen.

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