Substrate processing method and substrate processing apparatus

Abstract

The invention provides a substrate processing method and a substrate processing device, and relates to the field of semiconductor manufacturing equipment.The substrate processing method comprises the steps that a substrate is fixed to a substrate holder; driving the substrate holder to rotate; spraying a treating fluid to the substrate for the first time to perform first etching, wherein the distance from a liquid contact point of the treating fluid sprayed for the first time to the edge of the substrate is smaller than a preset etching width, wherein the liquid contact point falls on the substrate; obtaining the edge coating gradient of the substrate after the first etching; and comparing the edge coating gradient with a target edge coating gradient, adjusting the spraying angle of the treatment liquid relative to the substrate according to a comparison result, and spraying the treatment liquid to the substrate for the second time by taking the preset etching width as a liquid point. According to the substrate processing method provided by the invention, the spraying angle and position of the processing liquid relative to the substrate can be adjusted, so that the etching gradient of the edge coating film on the substrate by the processing liquid is influenced, and the uniformity of the gradient of the edge coating film after the substrate is etched is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment, and more specifically, to a substrate processing method and a substrate processing apparatus. Background Technology

[0002] As integrated circuit technology continues to advance, semiconductor devices are increasingly located near the edges of the substrate. Various defects transferred from these substrate edges have become a major factor limiting device yield. During device manufacturing, the complex interactions between thin film deposition, photolithography, etching, and chemical mechanical polishing create unstable thin film deposits at the substrate edges. The weak adhesion between these films and the inherent stress of the ultra-thick dielectric film in the substrate edge region can lead to severe peeling defects, particle contamination, and other problems, thus affecting product yield.

[0003] The importance of substrate edge etching in complex thin-film stacked chip manufacturing processes is becoming increasingly prominent. Different chemical solutions can be used to effectively remove various types of useless masks, residues, thin films, etc. on the substrate edges, avoiding their impact on subsequent processes, thereby improving chip manufacturing yield.

[0004] However, due to its special geometry, the coating at the edge of the substrate is very sensitive to the angle of the chemical liquid spraying. The uniformity of the edge coating slope after substrate etching is also affected by the angle of the chemical liquid spraying, which in turn affects the effectiveness of removing thin films and contaminants.

[0005] Therefore, it is of great significance to design a substrate processing device that can effectively control the edge coating slope during etching. Summary of the Invention

[0006] In view of this, this application provides a substrate processing method and a substrate processing apparatus, which can adjust the spray angle and position of the processing liquid relative to the substrate, thereby affecting the etching slope of the coating on the upper edge of the substrate by the processing liquid, thereby improving the uniformity of the edge coating slope after the substrate is etched.

[0007] In a first aspect, a substrate processing method is provided, comprising: fixing a substrate to a substrate holder; driving the substrate holder to rotate; spraying a processing liquid onto the substrate for a first etching, wherein the distance from the contact point of the first sprayed processing liquid on the substrate to the edge of the substrate is less than a preset etching width; obtaining the edge coating slope of the substrate after the first etching; comparing the edge coating slope with a target edge coating slope; adjusting the spray angle of the processing liquid relative to the substrate according to the comparison result; and spraying the processing liquid onto the substrate a second time with the preset etching width as the contact point.

[0008] Optionally, adjusting the spray angle of the treatment liquid relative to the substrate based on the comparison results specifically involves: if the edge coating slope is less than the target edge coating slope, then the angle between the nozzle spraying the treatment liquid and the substrate is reduced; if the edge coating slope is greater than the target edge coating slope, then the angle between the nozzle spraying the treatment liquid and the substrate is increased; wherein, the angle between the nozzle and the substrate is the acute angle between the movement path of the treatment liquid sprayed from the nozzle and the surface of the substrate.

[0009] Optionally, adjusting the spray angle of the processing liquid relative to the substrate based on the comparison results specifically involves: if the edge coating slope is less than the target edge coating slope, then reducing the gas pressure inside the processing chamber of the substrate; if the edge coating slope is greater than the target edge coating slope, then increasing the gas pressure inside the chamber.

[0010] Furthermore, if the spray angle of the processing liquid relative to the substrate is adjusted by reducing the gas pressure inside the cavity, the nozzle is moved horizontally towards the edge of the substrate; if the spray angle of the processing liquid relative to the substrate is adjusted by increasing the gas pressure inside the cavity, the nozzle is moved horizontally towards the center of the substrate.

[0011] Optionally, the pressure inside the processing chamber can be adjusted via an exhaust pipe connected to the processing chamber.

[0012] In a second aspect, a substrate processing apparatus is provided, comprising: a substrate holder for holding and rotating a substrate; a nozzle disposed obliquely above the substrate relative to the edge of the substrate for spraying a processing liquid onto the edge of the substrate; and a control unit for adjusting the spray angle of the processing liquid relative to the substrate in order to adjust the edge coating slope of the substrate.

[0013] The control unit is configured to control the nozzle to perform the first etching with the distance from the liquid landing point of the processing liquid on the substrate to the edge of the substrate being less than a preset etching width, so as to obtain the edge coating slope after the first etching.

[0014] The spray angle of the treatment liquid relative to the substrate is adjusted according to the comparison between the edge coating slope and the target edge coating slope, and the nozzle is controlled to spray the treatment liquid onto the substrate a second time with the preset etching width as the liquid contact point.

[0015] Optionally, the control unit includes an angle adjustment module for controlling the spray angle of the treatment liquid by adjusting the angle between the nozzle and the substrate.

[0016] Optionally, the control unit further includes: a pressure regulating module, used to control the spray angle of the processing liquid by adjusting the pressure inside the substrate processing device.

[0017] Optionally, the substrate processing apparatus further includes an exhaust pipe communicating with the processing chamber within the substrate processing apparatus, and the air pressure regulating module regulates the air pressure by controlling the exhaust pipe.

[0018] Optionally, the substrate processing apparatus further includes a motor for driving the substrate holder to rotate.

[0019] In summary, compared with the prior art, the substrate processing method and substrate processing apparatus of this application can change the spray angle and position of the processing liquid relative to the substrate by adjusting the angle between the nozzle and the substrate or the air pressure in the cavity, thereby affecting the etching slope of the coating on the upper edge of the substrate by the processing liquid, and thus improving the uniformity of the edge coating slope after the substrate is etched. Attached Figure Description

[0020] Figure 1 This is a simplified schematic diagram of a substrate processing apparatus provided according to an embodiment of this application.

[0021] Figure 2 This is a diagram showing the relationship between the angle between the nozzle and the substrate and the edge coating slope of the substrate after etching, according to an embodiment of this application.

[0022] Figure 3 This is a schematic diagram of gas flow according to an embodiment of this application.

[0023] Figures 4(a) and 4(b) are schematic diagrams of the edge coating slope of the substrate after etching under different air pressures according to embodiments of this application.

[0024] Figure 5 This is a schematic flowchart of a substrate processing method provided according to an embodiment of this application. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0026] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used in the description of this application is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms "comprising" and "having" and any variations thereof in the description, claims and foregoing drawings of this application are intended to cover non-exclusive inclusion.

[0027] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0028] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected," "linked," and "attached" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0029] The structures, proportions, and sizes depicted in the accompanying drawings are solely for illustrative purposes and to aid those skilled in the art. They are not intended to limit the scope of this application and therefore have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, provided they do not affect the effectiveness or purpose of this application, should still fall within the scope of the technical content disclosed herein. Furthermore, terms such as "upper," "lower," "left," "right," "middle," and "a" used in this specification are merely for clarity and not intended to limit the scope of this application. Changes or adjustments to their relative relationships, without any substantial alteration to the technical content, should also be considered within the scope of this application. To maintain brevity, the same structures are avoided from being repeatedly labeled in the accompanying drawings.

[0030] It should be understood that "multiple" in the following context refers to two or more (including two).

[0031] Figure 1 A simplified schematic diagram of a substrate processing apparatus provided in an embodiment of this application is shown. When the processing liquid is an etching liquid, the substrate processing apparatus is used as an etching device; when the processing liquid is a cleaning liquid, the substrate processing apparatus is used as a cleaning device. This application does not limit the scope of the application. For ease of understanding, the structure of the substrate processing apparatus provided in this application is described below using an etching device as an example.

[0032] like Figure 1As shown, the substrate processing apparatus 100 includes a substrate holder 10 and a nozzle 20. The substrate holder 10 supports the substrate w. The nozzle 20 is located at the upper edge of the substrate w and sprays a processing liquid toward the edge of the substrate w. The nozzle 20 can change the spray angle and position of the processing liquid 21 relative to the edge of the substrate w, where the spray position refers to the position where the processing liquid 21 reaches the upper surface of the substrate w.

[0033] When the substrate processing apparatus 100 is in operation, the substrate holder 10, while holding the substrate w, is rotated by the rotation drive unit 40, thereby rotating the substrate w. To avoid hindering edge etching of the substrate w, the diameter of the substrate holder 10 is smaller than the diameter of the substrate w, so that the substrate holder 10 does not contact the edge of the substrate w, but only holds the substrate w horizontally. The substrate holder 10 can be a vacuum chuck that adsorbs the central portion of the lower surface of the substrate w. The rotation drive unit 40 includes a rotation drive shaft 41 supporting the substrate holder 10 and a motor 42 that rotates the rotation drive shaft 41. By rotating the rotation drive shaft 41 using the motor 42, the substrate w held by the substrate holder 10 is rotated. In one specific embodiment, the substrate processing apparatus 100 performs edge etching of the substrate w by spraying a processing liquid 21 (e.g., an etching liquid) onto the edge of the rotating disk-shaped substrate w through a nozzle 20. For example, if the surface of the substrate w is coated with a silicon nitride (SiN) film, edge etching removes the SiN film from the edge of the substrate w using a processing liquid capable of removing the SiN film. It should be understood that the processing liquid 21 is sprayed from the nozzle 20 towards the edge of the substrate w. Due to the centrifugal force caused by the rotation of the substrate w, the processing liquid 21 will not flow into the central area (device area) of the upper surface of the substrate w, but will fall from the edge of the substrate w, thus preventing the thin film in the device area of ​​the substrate w from being etched. This application does not particularly limit the processing liquid used for edge etching. For example, titanium nitride films, aluminum films, and tungsten films can use a mixed solution of ammonia, hydrogen peroxide, and pure water (i.e., SC-1 solution) as the processing liquid. For example, silicon oxide films and silicon nitride films can use hydrofluoric acid as the processing liquid. For example, polycrystalline silicon films can use a mixed solution of hydrogen fluoride and pure water (i.e., HF solution) as the processing liquid.

[0034] The nozzle's angle relative to the substrate edge affects the spray angle between the processing liquid and the substrate edge, thus affecting the etching of the substrate's upper edge coating and consequently the uniformity of the edge coating slope after etching. Furthermore, an improper nozzle angle relative to the substrate edge can easily damage the device area of ​​the substrate. For example, if the nozzle 20 is positioned at a perpendicular angle (90°) to the edge of the substrate w, the processing liquid 21 may splash onto the central area of ​​the upper surface of the substrate w, contaminating the device area. Therefore, the nozzle 20 should be positioned at an angle relative to the substrate w above the edge, allowing for the spraying of the processing liquid 21 at an angle relative to the substrate w. Figure 1As shown, to prevent the processing liquid 21 from splashing into the central area, the nozzle 20 is typically sprayed towards the edge of the substrate, with the acute angle θ between the movement path of the processing liquid sprayed from the nozzle 20 and the substrate surface. Generally, the smaller the angle θ, the gentler the etching slope of the coating on the upper edge of the substrate w by the processing liquid 21. Figure 2 The diagram illustrates the relationship between the included angle θ and the edge coating slope after etching at multiple included angles (i.e., multiple spray angles of the processing liquid) between the nozzle 20 and the substrate w, as shown in the figure. Figure 2 As shown, the vertical axis represents the substrate film thickness after etching, and the horizontal axis represents the radial position of the substrate. The included angle θ is exemplified by 20°, 30°, and 35°. It should be understood that... Figure 2 The curve in the figure is used to represent the outline of the edge coating of the etched substrate. This curve shows the thickness variation of the coating at a specific location (e.g., the etching line at the edge of the substrate), reflecting the change in the shape of the coating on the substrate surface. Multiple sets of experiments were conducted in this embodiment (e.g., Figure 2 The first, second, and third groups were used to verify the relationship between the angle between the nozzle and the substrate and the edge coating slope of the etched substrate. The experimental results show that the smaller the angle θ between the nozzle 20 and the substrate w (i.e., the smaller the spray angle θ of the processing liquid 21 from the nozzle 20), the gentler the edge coating slope of the etched substrate, meaning a gentler change in the thickness of the edge coating. For example, in the first group, within the radial position (147.8, 148.1) mm of the substrate, when the angle θ is 20°, the edge coating slope of the etched substrate is less than that when the angle θ is 35°. Similarly, in the second group, within the radial position (147.9, 148) mm of the substrate, when the angle θ is 20°, the edge coating slope of the etched substrate is less than that when the angle θ is 30°.

[0035] Based on the above, by controlling the included angle between the nozzle and the substrate, the etching slope of the coating on the edge of the substrate can be effectively controlled, improving the uniformity of the edge coating slope after substrate etching. This allows for effective etching to remove unwanted films present at the edge of the substrate, without causing additional damage to semiconductor devices or cells and wiring in the device area of ​​the substrate.

[0036] It should be understood that the upper and lower surfaces of the substrate are the faces located above and below when the substrate is held horizontally, respectively. The edge of the substrate is the end region of the outer periphery of the substrate and is typically an area where no semiconductor device pattern is formed (i.e., a non-device area). Furthermore, the edge plating slope of the substrate refers to the degree of inclination of the plating surface at the substrate edge, that is, the angle or slope between the plating thickness at the substrate edge and the substrate.

[0037] It should be noted that the number of nozzles mentioned above is one, but this application does not limit this, and two or more nozzles can be set as needed.

[0038] Continue to refer to Figure 1 In some embodiments, the substrate processing apparatus 100 further includes an exhaust pipe 30 communicating with the processing chamber for discharging the gas fed into the substrate w to the outside of the apparatus. As the gas is exhausted through the exhaust path, a negative pressure is formed in the internal space of the apparatus (i.e., inside the processing chamber). Generally, the higher the gas pressure inside the chamber, the faster the gas flows under the action of the pressure difference, forming a faster airflow. This causes the processing liquid 21 ejected from the nozzle 20 to tilt, that is, the spray angle of the processing liquid 21 relative to the substrate w changes, and the landing point of the processing liquid 21 on the substrate w also changes. Ultimately, this leads to changes in the slope and etching width of the edge coating of the substrate w after etching. Figure 3 This illustrates the gas flow within the device, such as... Figure 3 As shown, the gas above the substrate w flows along the gas flow path 31 from the center region of the substrate w to the edge region and into the space below the substrate w, finally exiting from the exhaust pipe 30. When the gas pressure inside the cavity increases, the airflow in the gas flow path 31 also increases, causing the processing liquid 21a sprayed from the nozzle 20 relative to the substrate w to be tilted to the processing liquid 21b. At this time, the angle of the processing liquid relative to the substrate w changes. Specifically, when the position and angle of the nozzle 20 remain unchanged, when the gas pressure inside the cavity increases, the airflow accelerates, the tilt of the liquid column of the processing liquid increases, that is, the spray angle of the processing liquid 21 relative to the substrate w decreases, resulting in a gentler slope of the edge coating of the etched substrate w, that is, a gentler change in the thickness of the edge coating of the etched substrate. At the same time, due to the tilt of the liquid column, the position of the actual contact point of the processing liquid also changes, causing the actual etching width to be smaller than the preset etching width. Referring to Figures 4(a) and 4(b), the horizontal axis represents the substrate film thickness after etching, and the vertical axis represents the radial position of the substrate. At this point, the angle θ between the nozzle 20 and the substrate w is 20°. As can be seen from the figures, within the radial position (147.8, 147.9) mm of the substrate, the slope of the edge coating gradient of the etched substrate is greater when the intracavity gas pressure is 150 Pa than when the intracavity gas pressure is 400 Pa. In other words, the higher the intracavity gas pressure, the gentler the edge coating gradient during substrate etching.

[0039] It should be noted that adjusting the diameter, length, valve, and position of the exhaust pipe can affect the air pressure. For air pressure adjustment, please refer to existing technology, which will not be elaborated here.

[0040] In some embodiments, when etching the edge coating of a substrate coated with multiple thin films, it is necessary to carefully consider factors such as the etching degree of each film layer and the difference in thickness between layers to avoid excessive changes in the edge coating slope during the etching process. Therefore, continue to refer to Figure 1The substrate processing apparatus 100 also includes a control unit 50 for overall control of the entire apparatus. The control unit 50 controls the operation of all functional components of the substrate processing apparatus 100 (e.g., motor 42, exhaust pipe 30, nozzle 20, etc.).

[0041] The control unit 50 adjusts the spray angle and position of the processing liquid 21 relative to the substrate w based on information related to the deformation (especially the deformation in the thickness direction) of the edge coating after the first etching of the substrate w, in order to perform a second etching on the substrate w so that the slope of the edge coating after the second etching of the substrate w is similar to the target edge coating slope. Specifically, the control unit 50 adjusts the spray angle and position of the processing liquid 21 relative to the substrate w based on a comparison between the slope of the edge coating after the first etching of the substrate w and the target edge coating slope.

[0042] Optionally, the control unit 50 includes an angle adjustment module. This module adjusts the angle between the nozzle 20 and the substrate w based on a comparison between the edge coating slope after the first etching of the substrate w and the target edge coating slope, thereby adjusting the spray angle and position of the processing liquid 21 relative to the edge of the substrate w. In one embodiment, the nozzle 20 rotates under the control of the angle adjustment module of the control unit 50, changing the angle between the nozzle 20 and the substrate w, thus altering the spray angle and position of the processing liquid 21. In another embodiment, a motor (not shown) that can change the orientation of the nozzle 20 in any direction can be installed within the nozzle 20. Driven under the control of the control unit 50, the motor changes the angle between the nozzle 20 and the substrate w, thereby changing the spray angle and position of the processing liquid 21 from the nozzle 20 relative to the edge of the substrate w.

[0043] Optionally, the control unit 50 also includes a pressure regulation module. This module can adjust the air pressure within the processing chamber via the exhaust pipe 30 based on a comparison between the edge coating slope of the substrate w after the first etching and the target edge coating slope. This adjustment allows for the control of the spray angle and position of the processing liquid 21 relative to the edge of the substrate w. In one specific embodiment, an electric valve (not shown) can be installed in the exhaust pipe 30. Under the control of the pressure regulation module in the control unit 50, the opening degree of the electric valve can be adjusted to change the air pressure within the device, thereby altering the spray angle and position of the processing liquid 21 relative to the edge of the substrate w.

[0044] Based on the above, the control unit 50 can adjust the components in the device in a timely manner according to the etching requirements of each film layer during the etching process, thereby improving the smoothness of the overall film thickness slope at the substrate edge. The control unit 50 can be implemented by a combination of hardware and software. For example, a general-purpose computer can be used as the hardware, and a program (device control program and processing procedure, etc.) used to operate the general-purpose computer can be used as the software. The software is stored on any storage medium that can be read by the hardware (i.e., a non-transitory computer-readable storage medium). Therefore, the software can be stored on a storage medium such as a hard disk drive that is fixedly installed in the computer, or it can be stored on a storage medium that can be removably installed in the computer, such as a CD-ROM, DVD, or flash memory.

[0045] Accordingly, this application also provides a substrate processing method, which involves performing a first etching within the edge etching line to be etched on the substrate to obtain the current etching coating slope, determining whether the current coating slope meets the process requirements, and if it does, directly performing a second etching on the etching line; if it does not meet the requirements, adjusting the nozzle angle and then performing a second etching on the etching line. (Reference) Figure 5 As shown, the substrate processing method includes the following steps:

[0046] S1, Fix the substrate to the substrate holder;

[0047] S2, drive the substrate holder to rotate, so that the substrate rotates;

[0048] S3, spray the treatment liquid onto the substrate surface for the first time to obtain the edge coating slope of the etched substrate, wherein the landing point of the first sprayed treatment liquid on the substrate is within the preset etching width of the substrate.

[0049] S4. Compare the edge coating slope with the target edge coating slope, and adjust the spray angle of the treatment liquid relative to the substrate based on the comparison result, so as to spray the treatment liquid onto the substrate surface a second time.

[0050] It should be noted that the etching lines on the edge surface of the substrate correspond to the preset etching width of the substrate.

[0051] In one specific embodiment, the spray angle of the treatment liquid relative to the substrate is adjusted by adjusting the angle between the nozzle and the substrate. Specifically, if the edge coating slope is less than the target edge coating slope, the angle between the nozzle spraying the treatment liquid and the substrate is reduced; if the edge coating slope is greater than the target edge coating slope, the angle between the nozzle spraying the treatment liquid and the substrate is increased.

[0052] In another specific embodiment, the spray angle of the processing liquid relative to the substrate is adjusted by adjusting the gas pressure inside the processing chamber. Specifically, if the edge coating slope is less than the target edge coating slope, the gas pressure inside the chamber is reduced; if the edge coating slope is greater than the target edge coating slope, the gas pressure inside the chamber is increased.

[0053] Furthermore, adjusting the air pressure within the chamber causes the liquid column to tilt, changing the actual contact point of the liquid and consequently affecting the actual etching width, making it larger or smaller than the preset etching width. Therefore, when adjusting the spray angle of the liquid relative to the substrate by adjusting the air pressure within the chamber, it is also necessary to adjust the horizontal position of the nozzle to ensure that the contact point of the second spray of liquid falls on the etching line. Increasing the air pressure within the chamber will cause the actual contact point of the liquid to be closer to the edge of the substrate, requiring the nozzle to be moved horizontally towards the center of the substrate; conversely, decreasing the air pressure within the chamber will cause the actual contact point of the liquid to be closer to the center of the substrate, requiring the nozzle to be moved horizontally towards the edge of the substrate.

[0054] It should be noted that the specific adjustment operations for the angle between the nozzle and the substrate and the air pressure inside the processing chamber are detailed in the description of the substrate processing device section, and will not be repeated here.

[0055] It should also be noted that the edge coating slope of the substrate can be obtained by transferring the substrate to a measurement machine. For details, please refer to the prior art, which will not be repeated here.

[0056] As can be seen from the above, by adjusting the angle between the nozzle and the substrate or the air pressure inside the cavity, the spray angle and position of the processing liquid relative to the substrate can be changed, thereby affecting the etching slope of the coating on the upper edge of the substrate and improving the uniformity of the coating slope at the edge of the substrate etching.

[0057] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A substrate processing method, characterized in that, include: Fix the substrate to the substrate holder; Drive the substrate holder to rotate; The substrate is first etched by spraying a processing liquid onto it. The distance from the point where the first sprayed processing liquid lands on the substrate to the edge of the substrate is less than a preset etching width. Obtain the edge coating slope of the substrate after the first etching; The edge coating slope is compared with the target edge coating slope. Based on the comparison result, the spray angle of the treatment liquid relative to the substrate is adjusted, and the treatment liquid is sprayed onto the substrate a second time with the preset etching width as the liquid application point.

2. The substrate processing method according to claim 1, characterized in that, The adjustment of the spray angle of the treatment liquid relative to the substrate based on the comparison results specifically involves: if the edge coating slope is less than the target edge coating slope, then the angle between the nozzle spraying the treatment liquid and the substrate is reduced; if the edge coating slope is greater than the target edge coating slope, then the angle between the nozzle spraying the treatment liquid and the substrate is increased; wherein, the angle between the nozzle and the substrate is the acute angle between the movement path of the treatment liquid sprayed from the nozzle and the surface of the substrate.

3. The substrate processing method according to claim 1, characterized in that, The adjustment of the spray angle of the processing liquid relative to the substrate based on the comparison results specifically involves: if the edge coating slope is less than the target edge coating slope, then the air pressure inside the processing chamber of the substrate is reduced; if the edge coating slope is greater than the target edge coating slope, then the air pressure inside the chamber is increased.

4. The substrate processing method according to claim 3, characterized in that, Also includes: If the spray angle of the treatment liquid relative to the substrate is adjusted by reducing the air pressure inside the cavity, the nozzle of the treatment liquid is moved horizontally toward the edge of the substrate. If the spray angle of the treatment liquid relative to the substrate is adjusted by increasing the air pressure inside the cavity, the nozzle of the treatment liquid is moved horizontally toward the center of the substrate.

5. The substrate processing method according to claim 3, characterized in that, The air pressure inside the processing chamber is adjusted by an exhaust pipe connected to the processing chamber.

6. A substrate processing apparatus, characterized in that, include: A substrate holder is used to hold and rotate the substrate. A nozzle is disposed at an angle above the substrate relative to the edge of the substrate, for spraying a treatment liquid toward the edge of the substrate; The control unit is used to adjust the spray angle of the treatment liquid relative to the substrate, so as to adjust the edge coating slope of the substrate; The control unit is configured to control the nozzle to perform the first etching with the distance from the liquid landing point of the processing liquid on the substrate to the edge of the substrate being less than a preset etching width, so as to obtain the edge coating slope after the first etching. The spray angle of the treatment liquid relative to the substrate is adjusted according to the comparison between the edge coating slope and the target edge coating slope, and the nozzle is controlled to spray the treatment liquid onto the substrate a second time with the preset etching width as the liquid contact point.

7. The substrate processing apparatus according to claim 6, characterized in that, The control unit includes: An angle adjustment module is used to control the spray angle of the treatment liquid by adjusting the angle between the nozzle and the substrate.

8. The substrate processing apparatus according to claim 6, characterized in that, The control unit also includes: The air pressure regulating module is used to control the spray angle of the processing liquid by adjusting the air pressure inside the substrate processing device.

9. The substrate processing apparatus according to claim 8, characterized in that, The substrate processing apparatus further includes an exhaust pipe communicating with the processing chamber within the substrate processing apparatus, and the air pressure regulating module regulates the air pressure by controlling the exhaust pipe.

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