Method for manufacturing semiconductor module, and semiconductor module

Abstract

This method for manufacturing a semiconductor module is provided with: a first conductor plate to which a plurality of semiconductor elements are joined; a second conductor plate disposed adjacent to the first conductor plate such that side surfaces thereof face each other; and a sealing member for molding and sealing the semiconductor element, the first conductor plate, and the second conductor plate, in which a plate-like member having a convex portion formed in the arrangement direction in which the first conductor plate and the second conductor plate are arranged is formed, and the first conductor plate and the second conductor plate are separated and formed by cutting the plate-like member. The plurality of semiconductor elements are bonded to the surface of the first conductor plate on the opposite side from the convex portion, and are sealed by the sealing member so that a part of the convex portion on the first conductor plate is exposed. Alternatively, a thermally conductive sheet-like member is attached to a portion of the protruding portion on the first conductor plate exposed after being sealed by the sealing member, and the second conductor plate is deformed. The surface of the protruding portion formed on the second conductor plate is positioned closer to the inner side of the sealing member than the surface of the protruding portion formed on the first conductor plate.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a semiconductor module and a semiconductor module. Background Technology

[0002] Patent document 1 disclosed below discloses a structure in which a resin sheet is provided on the surface opposite to the surface on which the semiconductor element is mounted on a lead frame on which the semiconductor element is mounted, and is sealed with molding resin, wherein the surface opposite to the resin sheet bonded to the lead frame is not covered by the molding resin.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-232313 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] Regarding the bonding of lead frames, which serve as heat dissipation paths for semiconductor components, to insulating thermally conductive sheets, in the presence of upper and lower lead frames clamping the chip, bonding can be achieved by applying high pressure to the heat dissipation surface of the lead frames if a load is applied from the top and bottom. However, it is difficult to apply high pressure to areas where only one side of the lead frame exists. When bonding cannot be achieved through high pressure, the lead frames may peel off from the insulating thermally conductive sheets, compromising insulation. Therefore, the object of this invention is to provide a method for manufacturing a semiconductor module and a semiconductor module that ensures reliable insulation.

[0008] Technical solutions to solve technical problems

[0009] A method for manufacturing a semiconductor module includes: a first conductor plate for bonding a plurality of semiconductor elements; a second conductor plate disposed adjacent to the first conductor plate such that their sides face each other; and a sealing member for molding and sealing the semiconductor elements, the first conductor plate, and the second conductor plate, comprising: forming a plate-shaped member having a convex portion formed along the arrangement direction of the first and second conductor plates; separating and forming the first and second conductor plates by cutting the plate-shaped member; bonding the plurality of semiconductor elements to a surface of the first conductor plate opposite to the convex portion; sealing with the sealing member to expose a portion of the convex portion on the first conductor plate, or attaching a thermally conductive sheet member to a portion of the convex portion exposed after sealing with the sealing member; and deforming the second conductor plate such that the surface of the convex portion formed on the second conductor plate is located closer to the inner side of the sealing member than the surface of the convex portion formed on the first conductor plate.

[0010] Invention Effects

[0011] According to the present invention, a method for manufacturing a semiconductor module and a semiconductor module that ensures insulation reliability can be provided. Attached Figure Description

[0012] Figure 1 This is a three-dimensional view of the semiconductor module with the thermally conductive sheet bonded to it.

[0013] Figure 2 This is an explanatory diagram of the bonding surface between the semiconductor module and the thermally conductive sheet.

[0014] Figure 3 This is a perspective view of a circuit body according to an embodiment of the present invention.

[0015] Figure 4 From Figure 2 The diagram when viewed from the R direction.

[0016] Figure 5 This is an exploded perspective view of a semiconductor module according to one embodiment of the present invention.

[0017] Figure 6 This is a cross-sectional view of a semiconductor module according to an embodiment of the present invention.

[0018] Figure 7 yes Figure 6 (b) is a magnified view of a portion of the image. Detailed Implementation

[0019] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The following description and drawings are examples for illustrating the present invention, and appropriate omissions and simplifications have been made to clarify the description. The present invention may also be implemented in various other forms. Unless otherwise specified, the structural elements may be singular or plural.

[0020] To facilitate understanding of the present invention, the positions, dimensions, shapes, and extents of the constituent elements shown in the accompanying drawings may not represent their actual positions, dimensions, shapes, or extents. Therefore, the present invention is not necessarily limited to the positions, dimensions, shapes, and extents disclosed in the accompanying drawings.

[0021] (Manufacturing method)

[0022] ( Figure 1 )

[0023] The semiconductor module 100 is formed by molding and sealing it with a sealing resin 101, which serves as a sealing member. The upper arm control terminal 102A, P main terminal 102B, N main terminal 103A, AC main terminal 104A, and lower arm control terminal 104B protrude outward from the sealing resin 101. Thermally conductive sheets 105 are bonded to both surfaces of the semiconductor module 100. Thus, the semiconductor module 100 and the thermally conductive sheets 105 become a single unit.

[0024] ( Figure 2 )

[0025] By temporarily bonding a portion of the surface of the third conductor plate 106 and a portion of the surface of the fifth conductor plate 107 (described later) to the thermally conductive sheet 105, and then forming a sealing resin 101, a semiconductor module 100 is formed. At this time, since the sealing resin 101 is formed along the surface of the thermally conductive sheet 105, the surface of the sealing resin 101, a portion of the exposed surface of the third conductor plate 106 that is not sealed by the sealing resin 101, and a portion of the exposed surface of the fifth conductor plate 107 are approximately on the same plane.

[0026] ( Figure 3 )

[0027] The circuit body 200, before the semiconductor module 100 is sealed with sealing resin 101, includes a first conductor plate 102, a second conductor plate 103, a third conductor plate 106, a fourth conductor plate 104, a fifth conductor plate 107, and a semiconductor element 109. The semiconductor element 109 is, for example, a SiC chip, and constitutes an upper arm circuit and a lower arm circuit.

[0028] The first conductor plate 102, the second conductor plate 103, and the fourth conductor plate 104 are arranged on the same plane. The first conductor plate 102 is positioned opposite the third conductor plate 106, and at least one semiconductor element 109, forming an upper arm circuit in an electrically parallel manner, is sandwiched between them. The semiconductor element 109 sandwiched therebetween is electrically bonded to the first conductor plate 102 and the third conductor plate 106 using solder or the like. Figure 3 In this configuration, two semiconductor elements 109 are arranged side-by-side on the first conductor plate 102. Additionally, at least one semiconductor element 109 sandwiched between the first conductor plate 102 and the third conductor plate 106 is arranged on the first conductor plate 102 along a configuration direction that places the first conductor plate 102 and the second conductor plate 103 side-by-side, thereby connecting the first conductor plate 102 and the third conductor plate 106.

[0029] The fourth conductor plate 104 and the fifth conductor plate 107 are positioned opposite each other, and at least one semiconductor element 109 (not shown) constituting the lower arm circuit is sandwiched between them. The semiconductor element 109 sandwiched therebetween is electrically bonded to the fourth conductor plate 104 and the fifth conductor plate 107 using solder or the like. Although Figure 3 Not shown, but similar to the two semiconductor elements 109 disposed on the first conductor plate 102, the two semiconductor elements 109 are disposed side by side on the fourth conductor plate 104.

[0030] Using aluminum wire (not shown) or the like, a plurality of semiconductor elements 109 disposed on the first conductor plate 102 and the fourth conductor plate 104 are electrically connected to the upper arm control terminal 102A and the lower arm control terminal 104B, respectively.

[0031] A temperature sensor 108 is disposed on the surface side of the semiconductor element 109 connected to at least one of the first conductor plate 102 and the fourth conductor plate 104. The output terminal of the temperature sensor 108 is connected to at least one of the upper arm control terminal 102A and the lower arm control terminal 104B. Thus, the temperature sensor 108 detects the temperature of the semiconductor element 109 and outputs a temperature signal.

[0032] ( Figure 4 )

[0033] A portion of the surface of the convex portion 102C and a portion of the surface of the convex portion 104C (described later) are temporarily bonded to the thermally conductive sheet 105. Then, the semiconductor module 100 is formed by forming a sealing resin 101. Since the sealing resin 101 is formed along the surface of the thermally conductive sheet 105 after the convex portions 102C and 104C are temporarily bonded to the thermally conductive sheet 105, the sealing resin 101 is approximately on the same plane as a portion of the surface of the convex portion 102C and a portion of the surface of the convex portion 104C that are not sealed by the sealing resin 101.

[0034] Alternatively, the surface of the protruding portion 102C is exposed to the surface of the sealing resin 101, and a thermally conductive sheet 105 is attached thereto. However, due to structural reasons, the thermally conductive sheet 105 may not be attached even when the surface of the protruding portion 102C is exposed.

[0035] ( Figure 5 )

[0036] By cutting a plate-shaped member, a portion of the cut plate-shaped member is separated to form a first conductor plate 102, a third conductor plate 106, and a fourth conductor plate 104. That is, the first conductor plate 102, the third conductor plate 106, and the fourth conductor plate 104 are the same member. The first conductor plate 102 and the second conductor plate 103 are arranged adjacent to each other so that their sides face each other.

[0037] In the first conductor plate 102, a convex portion 102C is provided on the surface opposite to the surface where the plurality of semiconductor elements 109 are bonded. In the second conductor plate 103, a convex portion 103C is provided, protruding in the same direction as the protruding direction of the convex portion 102C. Furthermore, the convex portions 102C and 103C are formed along the arrangement direction in which the first conductor plate 102 and the second conductor plate 103 are arranged side by side. Thus, even a semiconductor module 100 having a structure in which no other chips, such as diode chips, are provided on the second conductor plate 103, and a conductor plate with a convex shape, can realize the structure of the present invention described later.

[0038] In the fourth conductor plate 104, a protrusion 104C is provided on the surface opposite to the surface on which the semiconductor element 109 is bonded. The protrusion 104C is formed from a protrusion that is separate from the protrusion 102C before the separation process, but is disposed on the same plane as the protrusion 102C.

[0039] Multiple semiconductor elements 109 are bonded to the surface opposite to the convex portion 102C. Furthermore, multiple semiconductor elements 109 are bonded to the surface opposite to the convex portion 104C.

[0040] The first conductor plate 102, the second conductor plate 103, and the fourth conductor plate 104 are integrally formed from plate-shaped members and are located in the same plane. However, by forming a bent portion 103D on the second conductor plate 103, the second conductor plate 103 is deformed, thereby causing the convex portion 103C on the plane to be located in a more inward direction than the convex portion 102C. In addition, the third conductor plate 106 and the fifth conductor plate 107 are arranged in the same plane.

[0041] The third conductor plate 106 has a base portion 106B electrically connected to at least one semiconductor element 109. The fifth conductor plate 107 has a base portion 107B electrically connected to at least one semiconductor element 109.

[0042] ( Figure 6 )

[0043] Figure 6 (a) is a cross-sectional view illustrating the connection relationship between the first conductor plate 102, the third conductor plate 106, the fourth conductor plate 104, and the fifth conductor plate 107. Figure 6 (b) is a cross-sectional view of a semiconductor module used to illustrate the connection relationship between the second conductor plate 103, the fourth conductor plate 104 and the fifth conductor plate 107.

[0044] In the first conductor plate 102, a protrusion 102C is provided on the surface opposite to the surface of the semiconductor element 109, and the protrusion 102C is exposed from the sealing resin 101. In the fourth conductor plate 104, a protrusion 104C is provided on the surface opposite to the surface of the semiconductor element 109, and the protrusion 104C is exposed from the sealing resin 101. The protrusions 102C and 104C exposed from the sealing resin 101 are placed on the same plane and bonded to the thermally conductive sheet 105.

[0045] A base portion 106B is provided on the third conductor plate 106. A semiconductor element 109 is sandwiched between the first conductor plate 102 and the base portion 106B, and is electrically connected to both the first conductor plate 102 and the base portion 106B, thereby positioning the third conductor plate 106 opposite to the first conductor plate 102. A base portion 107B is provided on the fifth conductor plate 107. A semiconductor element 109 is sandwiched between the fourth conductor plate 104 and the base portion 107B, and is electrically connected to both the fourth conductor plate 104 and the base portion 107B.

[0046] In the third conductor plate 106, the surface opposite to the surface where the base portion 106B is disposed is exposed from the sealing resin 101. In the fifth conductor plate 107, the surface opposite to the surface where the base portion 107B is disposed is exposed from the sealing resin 101. The surfaces of the third conductor plate 106 and the fifth conductor plate 107 exposed from the sealing resin 101 are placed on the same plane and bonded to the thermally conductive sheet 105. A connecting portion 106A is formed on the third conductor plate 106, and the third conductor plate 106 is connected to the fourth conductor plate 104 via the connecting portion 106A.

[0047] A connecting portion 107A is provided on the fifth conductor plate 107. The fifth conductor plate 107 is electrically connected to the second conductor plate 103 via the connecting portion 107A using solder or the like.

[0048] ( Figure 7 )

[0049] By forming the bend 103D, the surface of the convex portion 103C is positioned closer to the inside of the sealing resin 101 than the surface of the convex portion 102C, thereby deforming the second conductor plate 103. Thus, after cutting the plate-shaped member, the connection between the convex portion 103C and other regions is bent to form the bend 103D, such that the surface of the convex portion 103C is positioned on a plane different from the surface of the convex portion 102C.

[0050] After forming the curved portion 103D, a sealing resin 101 is filled and formed, and then molded and sealed to form the semiconductor module 100. When filling the sealing resin 101, the protruding portion 103C differs from the protruding portion 104C, which protrudes from the sealing resin 101 and is bonded to the thermally conductive sheet 105. The protruding portion 103C does not protrude from the sealing resin 101 nor is it bonded to the thermally conductive sheet 105. The sealing resin 101 is formed between the protruding portion 103C and the thermally conductive sheet 105.

[0051] In addition, voltage is applied to the first conductor plate 102, the second conductor plate 103, the third conductor plate 106, the fourth conductor plate 104, and the fifth conductor plate 107. By applying pressure to the thermally conductive sheet 105 at high temperature, an adhesive force is generated to it to the semiconductor module 100.

[0052] The semiconductor element 109 is sandwiched between the fourth conductor plate 104 and the base portion 107B and electrically connected. Since the fourth conductor plate 104 and the base portion 107B are integrally and rigidly fixed via the semiconductor element 109, the fourth conductor plate 104 and the fifth conductor plate 107 will not deform when the thermally conductive sheet 105 is bonded from the two surfaces of the structure and a load is applied, thus generating the surface pressure required for bonding.

[0053] Together with the third conductor plate 106, which sandwiches the semiconductor element 109 and is opposite to the first conductor plate 102, a rigid structure is formed. When a load is applied to the thermally conductive sheet 105 from the two surfaces of the structure and the sheets are bonded, the first conductor plate 102 and the third conductor plate 106 will not deform, and the surface pressure required for bonding can be generated.

[0054] Furthermore, for the portion of the lead frame, namely the convex portion 103C, located on a different plane from the convex portion 102C of the first conductor, where it is difficult to apply pressure for bonding / adhesion to adhere the thermally conductive sheet 105, and where pressure can only be applied from a single surface by load, a gap is provided between it and the thermally conductive sheet 105, allowing the sealing resin 101 to flow in. This eliminates the need for bonding with the thermally conductive sheet 105, thus preventing corona discharge. Moreover, with the above structure, in the medium to long term, damage to the thermally conductive sheet 105 caused by corona discharge and thermal stress can be suppressed, and reliable insulation can be stably ensured without compromising the insulation between the resin-made thermally conductive sheet 105 and the conductor plate.

[0055] According to the embodiments of the present invention described above, the following effects are achieved.

[0056] (1) A method for manufacturing a semiconductor module 100, the semiconductor module 100 comprising: a first conductor plate 102 for bonding a plurality of semiconductor elements 109; a second conductor plate 103 disposed adjacent to the first conductor plate 102 such that their sides face each other; and a sealing member 101 for molding and sealing the semiconductor elements 109, the first conductor plate 102 and the second conductor plate 103, forming a plate-shaped member having a convex portion formed along the arrangement direction of the first conductor plate 102 and the second conductor plate 103, wherein the first conductor plate 102 and the second conductor plate 103 are separated and formed by cutting the plate-shaped member. 03. A plurality of semiconductor elements 109 are bonded to the surface of the first conductor plate 102 opposite to the protrusion 102C, such that a portion of the protrusion 102C of the first conductor plate 102 is exposed on the surface of the sealing member 101, or a thermally conductive sheet 105 is attached to a portion of the protrusion 102C of the first conductor plate 102 exposed from the sealing member 101, and the second conductor plate 103 is deformed such that the surface of the protrusion 103C formed on the second conductor plate 103 is located closer to the inner side of the sealing member 101 than the surface of the protrusion 102C formed on the first conductor plate 102.

[0057] Furthermore, when attaching the thermally conductive sheet 105, or after pre-bonding it to the thermally conductive sheet 105 under high temperature and pressure, the thermally conductive sheet 105 is sealed together with the sealing resin 101 in such a way that a portion of the thermally conductive sheet 105 is exposed. This enables a method for manufacturing a semiconductor module 100 that ensures reliable insulation.

[0058] (2) After cutting the plate-shaped member, the connection between the convex portion and other areas is bent so that the surface of the convex portion provided on the second conductor plate 103 is on a different plane than the surface of the convex portion provided on the first conductor plate 102. As a result, the convex portion 103C will not be exposed when the sealing resin 101 is formed.

[0059] Furthermore, (4) a sealing member 101 is formed between the deformed second conductor plate 103 and the sheet member 105. Thus, insulation can be ensured even in the part of the lead frame that can only be pressured by a load from a single surface, namely the convex portion 103C.

[0060] (3) The third conductor plate 106 is positioned opposite the first conductor plate 102 while sandwiching the semiconductor element 109, and the sealing member 101 is formed by molding and sealing the semiconductor element 109 while it is sandwiched between the first conductor plate 102 and the third conductor plate 106. As a result, sufficient pressure can be generated by applying loads from both surfaces under high temperature and high pressure.

[0061] (5) Among the plurality of semiconductor elements 109, groups of electrically parallel semiconductor elements 109 are arranged on the surface opposite to the convex portion provided on the first conductor plate 102, along the arrangement direction of the first conductor plate 102 and the second conductor plate 103. Thus, even a semiconductor module 100 that is equipped with a SiC chip that does not separately mount a diode chip and cannot generate surface pressure can generate surface pressure through the structure of the present invention.

[0062] (6) The semiconductor module 100 of the present invention includes: a first conductor plate 102 for bonding a plurality of semiconductor elements 109; a second conductor plate 103 disposed adjacent to the first conductor plate 102 such that their sides face each other; and a sealing member 101 for molding and sealing the semiconductor elements 109, the first conductor plate 102 and the second conductor plate 103. The first conductor plate 102 and the second conductor plate 103 are respectively provided with protrusions formed along the arrangement direction of the first conductor plate 102 and the second conductor plate 103. The plurality of semiconductor elements 109 are bonded to the opposite side of the protrusions 102C of the first conductor plate 102. A portion of the protrusions 102C of the first conductor plate 102 is exposed on the surface of the sealing member 101, or a thermally conductive sheet member 105 is attached to the surface of the sealing member. The protrusions 103C of the second conductor plate 103 are not exposed from the sealing member 101.

[0063] Furthermore, when the thermally conductive sheet 105 is attached, or after being pre-bonded to the thermally conductive sheet 105 under high temperature and pressure, the thermally conductive sheet 105 is sealed together with the thermally conductive sheet 105 in such a way that a portion of the thermally conductive sheet 105 is exposed. This provides a semiconductor module 100 that ensures reliable insulation.

[0064] Furthermore, the present invention is not limited to the embodiments described above, and various modifications or combinations of other structures can be made without departing from its spirit. Additionally, the present invention is not limited to having all the structures described in the above embodiments, but also includes structures obtained by deleting a portion of those structures.

[0065] Label Explanation

[0066] 100 Semiconductor Modules

[0067] 101 Sealing Resin

[0068] 102 First Conductor Plate

[0069] 102A Upper Arm Control Terminal

[0070] 102B P Main Terminal

[0071] 102C Convex portion

[0072] 103 Second Conductor Plate

[0073] 103A N main terminal

[0074] 103C Convex portion

[0075] 103D Bend

[0076] 104 Fourth Conductor Plate

[0077] 104A AC main terminal

[0078] 104B Lower Arm Control Terminal

[0079] 104C convex part

[0080] 105 Thermally Conductive Sheets

[0081] 106 Third Conductor Plate

[0082] 106A Connecting Part

[0083] 106B Base

[0084] 107 Fifth Conductor Plate

[0085] 107A Connecting Part

[0086] 107B Base Section

[0087] 108 Temperature Sensor

[0088] 109 Semiconductor Components

[0089] 200 circuit body.

Claims

1. A method for manufacturing a semiconductor module, the semiconductor module comprising: A first conductor plate that bonds multiple semiconductor elements; A second conductor plate is disposed adjacent to the first conductor plate such that their sides face each other. as well as A sealing member for molding and sealing the semiconductor element, the first conductor plate, and the second conductor plate, characterized in that, A plate-shaped member having a convex portion formed along the arrangement direction of the first conductor plate and the second conductor plate is formed. By cutting the plate-shaped member, the first conductor plate and the second conductor plate are separated and formed. The plurality of semiconductor elements are bonded to the surface of the first conductor plate opposite to the convex portion. The sealing member is used to seal the surface so that a portion of the protrusion on the first conductor plate is exposed, or a thermally conductive sheet member is attached to a portion of the protrusion exposed on the first conductor plate after sealing with the sealing member. The second conductor plate is deformed such that the surface of the protrusion formed on the second conductor plate is located closer to the inner side of the sealing member than the surface of the protrusion formed on the first conductor plate.

2. The method for manufacturing a semiconductor module as described in claim 1, characterized in that, After cutting the plate-shaped member, the connection between the convex portion and other regions is bent so that the surface of the convex portion provided on the second conductor plate is positioned on a different plane than the surface of the convex portion provided on the first conductor plate.

3. The method for manufacturing a semiconductor module as described in claim 1, characterized in that, The third conductor plate is positioned opposite the first conductor plate, sandwiching the semiconductor element. The sealing member is formed by molding and sealing the semiconductor element while it is sandwiched between the first conductor plate and the third conductor plate.

4. The method for manufacturing a semiconductor module as described in claim 1, characterized in that, The sealing member is formed between the deformed second conductor plate and the sheet member.

5. The method for manufacturing a semiconductor module as described in claim 1, characterized in that, Among the plurality of semiconductor elements, a group of the semiconductor elements that are electrically connected in parallel is arranged along the configuration direction on the surface opposite to the convex portion provided on the first conductor plate.

6. A semiconductor module, characterized in that, include: A first conductor plate that bonds multiple semiconductor elements; A second conductor plate is disposed adjacent to the first conductor plate such that their sides face each other. as well as A sealing member for molding and sealing the semiconductor element, the first conductor plate, and the second conductor plate. The first conductor plate and the second conductor plate are respectively provided with convex portions formed along the arrangement direction of the first conductor plate and the second conductor plate. The plurality of semiconductor elements are joined to the opposite side of the convex portion of the first conductor plate. A portion of the convex portion of the first conductor plate is exposed on the surface of the sealing member, or a thermally conductive sheet-like member is attached to the surface of the discharged sealing member. The convex portion of the second conductor plate is not exposed from the sealing member.

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