Warping simulation method and device of packaging structure and electronic equipment
By constructing a warpage simulation method for the packaging structure, the structural model at each time point is dynamically simulated, which solves the problem of warpage deformation of the packaging structure, improves the simulation accuracy and reliability, and supports the optimization of process parameters.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-30
- Publication Date
- 2026-03-27
AI Technical Summary
During the manufacturing process, the packaging structure warps due to differences in the coefficients of thermal expansion of the materials, affecting reliability and performance. Existing technologies cannot effectively simulate process dynamics and layer activation sequence, and cannot accurately predict warping behavior.
By constructing a warpage simulation method for the encapsulated structure, material and process parameters are obtained, the structural model at each time point is dynamically simulated, the target stiffness matrix, thermal internal force and thermal bending moment are calculated, and the overall equilibrium equation is constructed in combination with the birth state to simulate the warpage value and the position of the neutral axis. Hierarchical birth and death simulation technology is used to improve the simulation accuracy.
It achieves accurate simulation of package structure warpage, reduces computational costs, improves simulation reliability and accuracy, supports dynamic adjustment of process parameters, and reduces warpage deformation.
Smart Images
Figure CN121744709A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of packaging technology, and more specifically, to a method, apparatus, and electronic device for simulating the warpage of a packaging structure. Background Technology
[0002] In the manufacturing process of packaging structures, temperature variations and differences in the coefficients of thermal expansion between different materials in the packaging structure can easily lead to warping and deformation, which seriously affects the reliability and performance of the packaging structure. Summary of the Invention
[0003] In order to at least overcome the above-mentioned deficiencies in the prior art, the purpose of this application is to provide a method, apparatus and electronic device for simulating the warpage of a packaging structure.
[0004] In a first aspect, embodiments of this application provide a warpage simulation method for a packaging structure, the warpage simulation method for the packaging structure comprising: Obtain the material characteristic parameters and process parameters of the packaging structure; A target time point set is determined based on the process parameters, and the target time point set includes multiple different time points; Based on the target time point set, determine the encapsulation structure model corresponding to each of the time points; Based on the material characteristic parameters, determine the target characteristic parameters of each active layer in the encapsulation structure model corresponding to the current temperature; Based on the target characteristic parameters, determine the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature; Obtain the birth state of each active layer in the encapsulation structure model corresponding to the current time point, and determine the birth additional load of the encapsulation structure model based on the birth state; Based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, an overall equilibrium equation is constructed to determine the target warpage value of the encapsulation structure model corresponding to the current temperature. The target warpage value is the difference between the maximum deflection value and the minimum deflection value corresponding to each corner point in the encapsulation structure model.
[0005] In one possible implementation, the method further includes: Obtain the structural parameters of the packaging structure; The steps for determining the target warpage value of the encapsulation structure model corresponding to the current temperature by constructing an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load are as follows: Based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, construct the overall equilibrium equation and calculate the strain vector and curvature vector corresponding to the current temperature. The target warpage value of the encapsulation structure model corresponding to the current temperature is calculated based on the curvature vector and the structural parameters.
[0006] In one possible implementation, the target characteristic parameters include the target elastic modulus, the target Poisson's ratio, and the target coefficient of thermal expansion; The steps for determining the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature based on the target characteristic parameters include: Calculate the stiffness matrix of each active layer of the encapsulation structure model corresponding to the current temperature based on the target elastic modulus and the target Poisson's ratio; The target stiffness matrix of the encapsulation structure model is calculated based on the stiffness matrix of each active layer corresponding to the current temperature. The thermal strain change of each active layer is calculated based on the target thermal expansion coefficient, and the target thermal internal force and target thermal bending moment of the encapsulation structure model are calculated based on the thermal strain change. After calculating the stiffness matrix of each active layer of the encapsulation structure model corresponding to the current temperature based on the target elastic modulus and the target Poisson's ratio, the method further includes: The position of the neutral axis is determined by weighting the thickness direction based on the stiffness matrix of each active layer at the current temperature.
[0007] In one possible implementation, the step of calculating the change in thermal strain of each activated layer based on the target coefficient of thermal expansion includes: Obtain the target reference temperature corresponding to each active layer; For each active layer, the thermal strain change of each active layer is obtained by integrating the target thermal expansion coefficient based on the target reference temperature and the current temperature using a piecewise integral function.
[0008] In one possible implementation, the step of obtaining the birth state of each activation layer in the encapsulation structure model corresponding to the current time point includes: The activation layers in the encapsulation structure model corresponding to the current time point are compared with the activation layers in the encapsulation structure model corresponding to the reference time point to determine the birth layer corresponding to the current time point; wherein, the reference time point is a time point in the target time point set that is adjacent to the current time point and located before the current time point; Obtain the strain vector and curvature vector of the encapsulated structure model corresponding to the reference time point, and use the strain vector and curvature vector as the birth state of the birth layer corresponding to the current time point, thereby obtaining the birth state of each active layer in the encapsulated structure model corresponding to the current time point.
[0009] In one possible implementation, the step of determining the target time point set based on the process parameters includes: Based on the process parameters, the activation time point, failure time point, and process time point corresponding to each temperature node of the process curve for each activation layer in the packaging structure are obtained. The activation time points, failure time points, and process time points are sorted according to time order to obtain a set of time points to be processed. Obtain a preset temperature difference value, and judge the temperature change within the time interval corresponding to adjacent time points in the set of time points to be processed based on the preset temperature difference value; If the temperature change between adjacent time points is greater than the preset temperature difference value, then at least one interpolation time point is inserted between the adjacent time points, and the set of time points to be processed after the insertion of the interpolation time point is taken as the target time point set.
[0010] In one possible implementation, the step of determining the encapsulation structure model corresponding to each of the target time points based on the target time point set includes: Obtain the target geometry pattern; Based on the target geometric pattern, the geometry construction function is invoked to determine the encapsulation structure model corresponding to each time point in the target time point set.
[0011] In one possible implementation, after determining the target warpage value of the encapsulation structure model corresponding to the current temperature by constructing an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, the method further includes: The process parameters of the target packaging structure are adjusted based on the target warpage value of the packaging structure model.
[0012] Secondly, embodiments of this application also provide a warpage simulation device for a packaging structure, comprising: The acquisition module is used to acquire the material characteristic parameters and process parameters of the packaging structure. The first determining module is used to determine a target time point set based on the process parameters, wherein the target time point set includes multiple different time points; The second determining module is used to determine the encapsulation structure model corresponding to each of the target time points based on the target time point set. The third determining module is used to determine the target feature parameters of each activation layer in the packaging structure model corresponding to the current temperature based on the material feature parameters. The fourth determining module is used to determine the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature based on the target characteristic parameters. The fifth determining module is used to obtain the birth state of each activation layer in the encapsulation structure model corresponding to the current time point, and determine the birth additional load of the encapsulation structure model based on the birth state; The sixth determining module is used to construct an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, and to determine the target warpage value of the encapsulation structure model corresponding to the current temperature.
[0013] Thirdly, embodiments of this application also provide an electronic device, including: Memory, used to store one or more programs; The processor, when the one or more programs are executed by the processor, implements the warpage simulation method of the packaging structure provided in the first aspect above.
[0014] Based on any of the above aspects, the warpage simulation method, apparatus, and electronic device for packaging structures provided in this application can accurately simulate the warpage of the packaging structure at different process stages by constructing packaging structure models corresponding to each time point and calculating the target warpage value of the packaging structure models. This method not only considers the influence of material characteristic parameters and process parameters on the warpage of the packaging structure, but also realizes the dynamic simulation of the packaging structure manufacturing process through hierarchical birth and death simulation technology, thereby improving the accuracy and reliability of warpage simulation. Attached Figure Description
[0015] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0016] Figure 1 A flowchart illustrating the warpage simulation method for the packaging structure provided in this embodiment; Figure 2a A histogram showing the contribution of the target thermal bending moment provided in this embodiment; Figure 2b This is a schematic diagram of the neutral axis position provided in this embodiment; Figure 2c This is a schematic diagram of the diagonal deflection curve provided in this embodiment; Figure 3 This is a schematic diagram of the sub-steps of step S170 provided in this embodiment; Figure 4 This is a schematic diagram of the sub-steps of step S150 provided in this embodiment; Figure 5 This is a schematic diagram of the sub-steps of step S153 provided in this embodiment; Figure 6 This is a schematic diagram of the sub-steps of step S160 provided in this embodiment; Figure 7 This is a schematic diagram of the sub-steps of step S120 provided in this embodiment; Figure 8 This is a schematic diagram of the sub-steps of step S130 provided in this embodiment; Figure 9 This is a schematic structural block diagram of the electronic device provided in this embodiment; Figure 10 A schematic diagram of the functional modules of the warp simulation device for the packaging structure provided in this embodiment.
[0017] Icons: 700 - Electronic device; 710 - Processor; 720 - Computer-readable storage medium; 730 - Warp simulation device for package structure; 731 - Acquisition module; 732 - First determination module; 733 - Second determination module; 734 - Third determination module; 735 - Fourth determination module; 736 - Fifth determination module; 737 - Sixth determination module. Detailed Implementation
[0018] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0019] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0020] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0021] In the description of this application, it should be noted that the terms "upper," "lower," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0022] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.
[0023] The inventors discovered that, currently, the warpage of encapsulation structures is typically predicted numerically using finite element analysis tools or simplified warpage calculation tools based on Classical Laminated Plate Theory (CLPT). However, finite element analysis tools are cumbersome to model and have high computational costs, while simplified warpage calculation tools based on Classical Laminated Plate Theory (CLPT) cannot meet the system simulation requirements for process dynamics, layer activation sequence, and "stress free birth" behavior, and cannot reflect the influence of the construction sequence on stiffness distribution and warpage behavior.
[0024] This embodiment provides a solution to the above problems. The specific implementation of this application will be described in detail below with reference to the accompanying drawings.
[0025] Please refer to Figure 1 , Figure 1 Example: A flowchart illustrating the warpage simulation method for the packaging structure provided in this embodiment. The warpage simulation method for the packaging structure may include the following steps.
[0026] Step S110: Obtain the material characteristic parameters and process parameters of the packaging structure.
[0027] In this embodiment, the material characteristic parameters of the encapsulation structure may include the elastic modulus E, Poisson's ratio ν, and the coefficient of thermal expansion α. The process parameters of the encapsulation structure may include the thickness of each layer in the encapsulation structure, activation time, failure time, reference temperature, anchoring direction, and process curve. The activation time can represent the point at which a certain layer of the encapsulation structure begins to participate in the structure, for example, the moment when the polymer coating is cured or the metal layer electroplating is completed. The failure time can represent the point at which a certain layer of the encapsulation structure peels off from the encapsulation structure, such as the moment when the temporary carrier is desorbed or the sacrificial layer is removed. The reference temperature can be a pre-set temperature value for a certain layer of the encapsulation structure, where reference_t is the reference temperature field. The anchoring direction can represent the stacking direction of a certain layer of the encapsulation structure relative to the current encapsulation structure, for example, the layer is stacked upwards or downwards relative to the current encapsulation structure. The process curve can represent the temperature change over time during the manufacturing process of the encapsulation structure.
[0028] Specifically, users can configure the material characteristic parameters and process parameters of the packaging structure in the material library module through operations such as creating, editing, and deleting, and save the configuration after completion so that the material characteristic parameters and process parameters can be used directly in the future.
[0029] In some examples, when configuring material characteristic parameters, users can sequentially input "Temperature (°C) – Elastic Modulus (MPa) – Poisson's Ratio" data in the elastic properties window of the material library module based on the temperature point. The material library module automatically performs floating-point format verification and saves the data. Users can then input "Temperature (°C) – CTE (1 / °C)" data in the coefficient of thermal expansion window and save it. When configuring process parameters, users can sequentially input information for each layer in the stack configuration window according to the position of each layer in the packaging structure, and input "Time – Temperature (°C)" data in the process curve window to generate a temperature-time curve.
[0030] Step S120: Determine a target time point set based on the process parameters. The target time point set includes multiple different time points.
[0031] In this embodiment, the activation time, failure time of each layer and the process curve of the packaging structure can be obtained from the process parameters. Then, the target time point set is obtained based on the activation time, failure time and process curve. The target time point set includes multiple different time points.
[0032] Step S130: Determine the encapsulation structure model corresponding to each of the target time points based on the target time point set.
[0033] In this embodiment, for each time point in the target time point set, the activation status of each layer in the packaging structure at each time point can be determined by the function _layer_is_active(), thereby determining the packaging structure model corresponding to different time points. In this way, the life and death simulation of the layers can be realized at the analytical level, which can truly reflect the dynamic structural changes in the process without the need for a complex finite element model, thereby reducing the computational cost.
[0034] Step S140: Determine the target feature parameters of each activation layer in the encapsulation structure model corresponding to the current temperature based on the material feature parameters.
[0035] In this embodiment, the target feature parameters of each active layer in the packaging structure model corresponding to the current temperature can be calculated using the interpolation function based on the material feature parameters obtained in step S110. The target feature parameters may include the target elastic modulus E(T), the target Poisson's ratio ν(T), and the target coefficient of thermal expansion α(T).
[0036] Step S150: Determine the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature based on the target characteristic parameters.
[0037] In this embodiment, the target stiffness matrix, target thermal internal force, and target thermal bending moment of the packaging structure model corresponding to the current temperature can be calculated based on the target characteristic parameters obtained in step S140. The target thermal internal force and target thermal bending moment are the resultant force or resultant moment obtained by integrating over the thickness direction.
[0038] Step S160: Obtain the birth state of each active layer in the encapsulation structure model corresponding to the current time point, and determine the birth additional load of the encapsulation structure model based on the birth state.
[0039] In this embodiment, the current time point of the target time point set can be obtained, and the birth state of each active layer in the encapsulation structure model can be determined based on the current time point. Then, the birth state can be converted into the birth additional load of the encapsulation structure model corresponding to the current time point through the function _birth_loads_vec(). The birth additional load may include equivalent additional internal force and equivalent additional internal moment.
[0040] Step S170: Construct an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, and determine the target warpage value of the encapsulation structure model corresponding to the current temperature.
[0041] In this embodiment, an overall equilibrium equation can be constructed based on the target stiffness matrix, target thermal internal force, target thermal bending moment obtained in step S150, and the additional load obtained in step S160. This equation is then solved to obtain the strain vector and curvature vector. Based on these strain and curvature vectors, the target warpage value of the encapsulation structure model corresponding to the current temperature can be calculated. This facilitates adjustments to the process parameters of the encapsulation structure during its fabrication, thereby improving its reliability. The target warpage value is the difference between the maximum and minimum deflection values at each corner point of the encapsulation structure model.
[0042] In addition, the neutral axis position of the packaging structure model corresponding to the current temperature can be determined based on the target feature parameters.
[0043] Please refer to Figure 2a , Figure 2a The target thermal bending moment contribution histogram provided in this embodiment, after obtaining the neutral axis position and target warpage value of the packaging structure model corresponding to each temperature point, can be used to create a hierarchical thermal bending moment contribution histogram to show the magnitude and sign of the contribution of each layer in the packaging structure to the overall warpage moment. This helps to identify the dominant warpage layer, for example... Figure 2a This diagram illustrates the moment contribution of the glass substrate (Pi), polymer coating (Pi), and metal layer (Cu) to the overall warpage moment in the encapsulation structure; please refer to [reference needed]. Figure 2b , Figure 2b The neutral axis position diagram provided in this embodiment can also be used to create a neutral axis position diagram, using thickness coordinates (Height z) to represent the position and thickness of each layer in the packaging structure, and marking the current neutral axis Z0 position; at the same time, please refer to Figure 2c , Figure 2c This is a schematic diagram of the diagonal deflection curve provided in this embodiment. The horizontal axis can represent different positions of the package structure, and the vertical axis can represent the deflection value. A diagonal deflection curve can also be created based on the deflection of the package structure at different positions to show the deflection change along the diagonal direction of the package structure, and the target warp value and the maximum absolute deflection of the corner of the package structure can be marked.
[0044] As can be seen, based on the above design, the warpage simulation method for the packaging structure provided in this application can accurately simulate the warpage of the packaging structure at different process stages by constructing packaging structure models corresponding to each time point and calculating the neutral axis position and target warpage value of the packaging structure models. This method not only considers the influence of material characteristic parameters and process parameters on the warpage of the packaging structure, but also realizes the dynamic simulation of the packaging structure manufacturing process through hierarchical birth and death simulation technology, thereby improving the accuracy and reliability of warpage simulation.
[0045] In one possible implementation, in step S110, the structural parameters of the encapsulation structure can also be obtained.
[0046] Specifically, users can input the package structure dimensions (e.g., 120mm × 120mm) in the process and geometry window, and select the geometry mode for constructing the package structure. The geometry mode can include a fixed geometry mode and an anchored dynamic mode. The fixed geometry mode means that before the simulation begins, the final stack boundary is established according to the user-defined final stacking order and thickness, and the currently existing layers are selected / filtered from the final stack boundary based on the set of active layers at each time point to participate in the calculation. For example, if the final stack structure has 5 layers, but t j If only 3 layers are activated at a given time point, then t j The geometry construction at each time point only uses the thickness range of these 3 layers, but the z-coordinate still refers to the final boundary. The anchored dynamic mode means that at each time point, the stacked geometry is reconstructed according to the geometry of the currently active layer. Specifically, the active layers can be sorted according to the activation time and input order, and the stacking direction is determined according to the anchoring direction of each active layer, thereby obtaining the thickness stacking boundary corresponding to the current time point. The geometric center of the thickness stacking boundary in the thickness direction is translated to the zero point of the z-coordinate. For example, if layer A is activated earliest and the anchor is "bottom", it is located at the center position; if layer B is activated later and the anchor is "top", it is stacked upwards to form a dynamic z-boundary.
[0047] In the above design, by introducing parameters such as activation time, failure time, and anchoring direction into the Classical Laminated Plate Theory (CLPT) framework, the current effective geometry and neutral axis position can be dynamically reconstructed on the time axis. At the same time, by setting two switchable geometry construction methods, namely fixed geometry mode and anchored dynamic mode, users can be compatible with the traditional static Classical Laminated Plate Theory (CLPT) method and simulate the influence of process construction sequence on warpage, which facilitates subsequent adjustment of process parameters.
[0048] Please refer to Figure 3 Step S170 may include the following sub-steps.
[0049] Step S171: Construct an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, and calculate the strain vector and curvature vector corresponding to the current temperature.
[0050] In this embodiment, a 6×6 linear equation system can be constructed based on the target stiffness matrix, target thermal internal force, target thermal bending moment, and additional load. If the stiffness matrix is a non-singular matrix (i.e., the determinant is not zero), the linear equation system can be solved directly. If the stiffness matrix is a singular matrix, the linear equation system can be solved using the pseudo-inverse to obtain the strain vector and curvature vector corresponding to the current temperature, thus ensuring numerical stability.
[0051] Step S172: Calculate the target warpage value of the packaging structure model corresponding to the current temperature based on the curvature vector and the structural parameters.
[0052] In this embodiment, the deflection at each position in the packaging structure model corresponding to the current temperature can be calculated based on the size information of the packaging structure in the structural parameters and the curvature vector obtained in step S171, and the diagonal deflection curve of the packaging structure model can be obtained. Then, the deflection of the four corner points and the center of the plate of the packaging structure model can be determined based on the diagonal deflection curve, thereby obtaining the target warpage value. The target warpage value can be the difference between the maximum and minimum deflection values corresponding to the four corner points.
[0053] In one possible implementation, the target characteristic parameters may include the target elastic modulus E(T), the target Poisson's ratio ν(T), and the target coefficient of thermal expansion α(T).
[0054] Please refer to Figure 4 Step S150 may include the following sub-steps.
[0055] Step S151: Calculate the stiffness matrix of each active layer of the encapsulation structure model corresponding to the current temperature based on the target elastic modulus and the target Poisson's ratio.
[0056] In this embodiment, the stiffness matrix Q(T) of each active layer of the encapsulation structure model corresponding to the current temperature can be calculated based on the target elastic modulus and target Poisson's ratio in the target characteristic parameters.
[0057] Step S152: Calculate the target stiffness matrix of the encapsulation structure model based on the stiffness matrix of each active layer corresponding to the current temperature.
[0058] In this embodiment, the stiffness matrix Q(T) of each active layer corresponding to the current temperature can be integrated over the thickness interval [z1, z2] of each active layer, and the sum of the integral values of each active layer can be used as the target stiffness matrix of the encapsulation structure model. The target stiffness matrix may include tensile stiffness A, coupling stiffness B, and bending stiffness D.
[0059] Step S153: Calculate the thermal strain change of each active layer based on the target thermal expansion coefficient, and calculate the target thermal internal force and target thermal bending moment of the encapsulation structure model based on the thermal strain change.
[0060] In this embodiment, the thermal strain change of each active layer at the current temperature can be calculated based on the target thermal expansion coefficient in the target characteristic parameters, and the target thermal internal force N of the encapsulation structure model can be further calculated using the thermal strain change. th and target thermal bending moment M th .
[0061] In addition, after calculating the stiffness matrix Q(T) of each active layer of the encapsulation structure model corresponding to the current temperature based on the target elastic modulus and target Poisson's ratio in the target characteristic parameters, the neutral axis derivation function _z0_at_T() can be used to weight the thickness direction based on the stiffness matrix of each active layer at the current temperature to determine the position of the neutral axis.
[0062] In one possible implementation, please refer to Figure 5 Step S153 may include the following sub-steps.
[0063] Step S153a: Obtain the target reference temperature corresponding to each activated layer.
[0064] In this embodiment, when obtaining the target reference temperature, either the stress-free generation mode or the explicit reference temperature mode can be selected. The stress-free generation mode is as follows: if no reference temperature for the active layer is set in step S110, the temperature of the active layer at the activation moment can be used as the target reference temperature T for that layer. ref The target reference temperature T ref The reference temperature can be calculated using an interpolation function based on the process curve in step S110. The explicit reference temperature mode is as follows: if a reference temperature for the activation layer is set in step S110, the reference temperature set in step S110 can be directly used as the target reference temperature T for that layer. ref .
[0065] Step S153b: For each active layer, the thermal strain change of each active layer is obtained by integrating the target thermal expansion coefficient based on the target reference temperature and the current temperature using a piecewise integral function.
[0066] In this embodiment, for each activated layer, the piecewise integration function _integrate_piecewise() can be used to evaluate the target thermal expansion coefficient at the target reference temperature T. ref Integrating with the current temperature range yields the change in thermal strain for each activated layer.
[0067] In the above design, by introducing a reference temperature treatment for free stress birth and a birth state recording mechanism, it is possible to model the birth element without initial stress at the analytical level.
[0068] In one possible implementation, please refer to Figure 6 Step S160 may include the following sub-steps.
[0069] Step S161: Compare each active layer in the encapsulation structure model corresponding to the current time point with each active layer in the encapsulation structure model corresponding to the reference time point to determine the birth layer corresponding to the current time point; wherein, the reference time point is a time point in the target time point set that is adjacent to the current time point and located before the current time point.
[0070] Step S162: Obtain the strain vector and curvature vector of the encapsulation structure model corresponding to the reference time point, and use the strain vector and curvature vector as the birth state of the birth layer corresponding to the current time point, thereby obtaining the birth state of each active layer in the encapsulation structure model corresponding to the current time point.
[0071] In this embodiment, the set of activation layers in the encapsulation structure model corresponding to the current time point can be compared with the set of activation layers in the encapsulation structure model corresponding to the previous time point in the target time point set to determine whether there is a newly activated birth layer at the current time point. If there is a birth layer, the strain vector and curvature vector of the encapsulation structure model corresponding to the previous time point can be obtained, and the strain vector and curvature vector of the encapsulation structure model corresponding to the previous time point can be used as the birth state of the birth layer. In this way, the birth state of each activation layer can be obtained by the same method.
[0072] For the first birth layer in the encapsulation structure, its birth state can be solved using either incremental or absolute mode. Incremental mode treats the birth state of the birth layer as a zero state and then updates it incrementally with subsequent temperature / structural changes. Absolute mode directly solves the global equilibrium equations for the birth layer at the initial temperature to obtain its birth state.
[0073] In the above design, by combining the stress-free birth reference temperature with the birth state additional load, the simulation results of this application can be made closer to the real process conditions, thereby improving the accuracy of warpage prediction under complex packaging structures and multi-material systems.
[0074] In one possible implementation, please refer to Figure 7 Step S120 may include the following sub-steps.
[0075] Step S121: Based on the process parameters, obtain the activation time point, failure time point, and process time point corresponding to each temperature node of the process curve for each activation layer in the packaging structure.
[0076] Step S122: Sort the activation time points, failure time points and process time points according to the time sequence to obtain a set of time points to be processed.
[0077] Step S123: Obtain a preset temperature difference value, and judge the temperature change within the time interval corresponding to adjacent time points in the set of time points to be processed based on the preset temperature difference value.
[0078] Step S124: If the temperature change corresponding to adjacent time points is greater than the preset temperature difference value, then at least one interpolation time point is inserted between the adjacent time points, and the set of time points to be processed after the insertion of the interpolation time point is taken as the target time point set.
[0079] In this embodiment, the activation time point, failure time point, and process time point corresponding to each temperature node of the process curve can be obtained from the process parameters. These time points are then sorted chronologically, and duplicate time points are removed to obtain a set of time points to be processed. A preset temperature difference value can then be obtained, and the temperature change within the time interval corresponding to adjacent time points in the set of time points to be processed can be compared with this preset temperature difference value. If the temperature change within the time interval corresponding to adjacent time points is greater than the preset temperature difference value, at least one interpolation time point is inserted at the midpoint of the adjacent time points to ensure that the temperature change within the time interval corresponding to adjacent time points is less than the preset temperature difference value, thus guaranteeing the numerical integration accuracy of the temperature change. The preset temperature difference value is the maximum temperature difference value corresponding to adjacent time points set in advance. The process curve can include multiple heating, holding, cooling, and reheating stages to simulate complex packaging processes.
[0080] In some cases, if the preset temperature difference is 10℃, the time point corresponding to the adjacent time point t1 in the set of time points to be processed is 10s, the time point corresponding to t2 is 20s, and the temperature change corresponding to t1 and t2 is greater than 10℃, then t3 can be inserted between t1 and t2, and the time point corresponding to t3 can be 15s.
[0081] In one possible implementation, please refer to Figure 8 Step S130 may include the following sub-steps.
[0082] Step S131: Obtain the target geometry pattern.
[0083] Step S132: Based on the target geometric pattern, call the geometry construction function to determine the encapsulation structure model corresponding to each time point in the target time point set.
[0084] In this embodiment, the corresponding geometry construction function can be called according to the selected target geometry mode (fixed geometry mode or anchored dynamic mode) to activate the activation layer at each time point, thereby obtaining the encapsulation structure model corresponding to each time point.
[0085] In one possible implementation, after obtaining the neutral axis position and target warpage value of the package structure model corresponding to the current temperature, the process parameters of the target package structure can be adjusted according to the neutral axis position and target warpage value to optimize the temperature control strategy in the process flow, thereby reducing the warpage deformation of the package structure and improving the manufacturing quality and reliability of the package structure.
[0086] Based on the same inventive concept, this embodiment also provides an electronic device 700, please refer to... Figure 9 , Figure 9 This is a block diagram of the electronic device 700. The electronic device 700 includes a warp simulation device 730 with a package structure, a computer-readable storage medium 720, and a processor 710.
[0087] The computer-readable storage medium 720 and the processor 710 are electrically connected directly or indirectly to achieve data transmission or interaction. For example, these components can be electrically connected to each other through one or more communication buses or signal lines. The warp simulation device 730 of the package structure includes multiple software functional modules that can be stored in the computer-readable storage medium 720 in the form of software or firmware or embedded in the operating system (OS) of the warp simulation device 730 of the package structure. The processor 710 is used to execute the executable modules stored in the computer-readable storage medium 720, such as the software functional modules and computer programs included in the warp simulation device 730 of the package structure.
[0088] The computer-readable storage medium 720 may be, but is not limited to, random access memory (RAM), read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), etc. The computer-readable storage medium 720 is used to store a program, which the processor 710 executes upon receiving an execution instruction.
[0089] The processor 710 may be an integrated circuit chip with signal processing capabilities. The processor 710 can be a general-purpose processor 710, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. The general-purpose processor 710 can be a microprocessor 710, or any conventional processor 710, etc.
[0090] Please refer to Figure 10 This application also provides a warpage simulation device 730 for a packaged structure. The warpage simulation device 730 includes multiple functional modules that can be stored in software form in a computer-readable storage medium 720. Functionally, the warpage simulation device 730 may include an acquisition module 731, a first determination module 732, a second determination module 733, a third determination module 734, a fourth determination module 735, a fifth determination module 736, and a sixth determination module 737. Wherein: The acquisition module 731 can be used to acquire the material characteristic parameters and process parameters of the packaging structure.
[0091] In this embodiment, the acquisition module 731 can be used to perform... Figure 1 For a detailed description of the acquisition module 731, please refer to the description of step S110 shown.
[0092] The first determining module 732 can be used to determine a target time point set based on the process parameters, wherein the target time point set includes multiple different time points.
[0093] In this embodiment, the first determining module 732 can be used to perform... Figure 1 For a detailed description of the first determining module 732, please refer to the description of step S120 shown.
[0094] The second determining module 733 can be used to determine the encapsulation structure model corresponding to each of the target time points based on the target time point set.
[0095] In this embodiment, the second determining module 733 can be used to perform... Figure 1 For a detailed description of the second determining module 733, please refer to the description of step S130 shown.
[0096] The third determining module 734 can be used to determine the target feature parameters of each active layer in the packaging structure model corresponding to the current temperature based on the material feature parameters.
[0097] In this embodiment, the third determining module 734 can be used to perform... Figure 1 For a detailed description of the third determining module 734, please refer to the description of step S140 shown.
[0098] The fourth determining module 735 can be used to determine the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature based on the target characteristic parameters.
[0099] In this embodiment, the fourth determining module 735 can be used to perform... Figure 1 For a detailed description of step S150 shown, please refer to the description of step S150.
[0100] The fifth determining module 736 can be used to obtain the birth state of each active layer in the encapsulation structure model corresponding to the current time point, and determine the birth additional load of the encapsulation structure model based on the birth state.
[0101] In this embodiment, the fifth determining module 736 can be used to perform... Figure 1 For a detailed description of step S160 shown, please refer to the description of step S160.
[0102] The sixth determining module 737 can be used to construct an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, and determine the target warpage value of the encapsulation structure model corresponding to the current temperature.
[0103] In this embodiment, the sixth determining module 737 can be used to perform... Figure 1 For a detailed description of step S170 shown, please refer to the description of step S170.
[0104] In summary, the warpage simulation method, apparatus, and electronic device for packaging structures provided in this application can accurately simulate the warpage of packaging structures at different process stages by constructing packaging structure models corresponding to each time point and calculating the neutral axis position and target warpage value of the packaging structure models. This method not only considers the influence of material characteristic parameters and process parameters on the warpage of packaging structures, but also realizes the dynamic simulation of the packaging structure manufacturing process through hierarchical birth and death simulation technology, thereby improving the accuracy and reliability of warpage simulation.
[0105] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
[0106] It will be apparent to those skilled in the art that this application is not limited to the details of the exemplary embodiments described above, and that this application can be implemented in other specific forms without departing from the spirit or essential characteristics of this application. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this application is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this application. No reference numerals in the claims should be construed as limiting the scope of the claims.
Claims
1. A method for simulating the warpage of an encapsulation structure, characterized in that, The method includes: Obtain the material characteristic parameters and process parameters of the packaging structure; A target time point set is determined based on the process parameters, and the target time point set includes multiple different time points; Based on the target time point set, determine the encapsulation structure model corresponding to each of the time points; Based on the material characteristic parameters, determine the target characteristic parameters of each active layer in the encapsulation structure model corresponding to the current temperature; Based on the target characteristic parameters, determine the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature; Obtain the birth state of each active layer in the encapsulation structure model corresponding to the current time point, and determine the birth additional load of the encapsulation structure model based on the birth state; Based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, an overall equilibrium equation is constructed to determine the target warpage value of the encapsulation structure model corresponding to the current temperature. The target warpage value is the difference between the maximum deflection value and the minimum deflection value corresponding to each corner point in the encapsulation structure model.
2. The warpage simulation method for the packaging structure according to claim 1, characterized in that, The method further includes: Obtain the structural parameters of the packaging structure; The steps for determining the target warpage value of the encapsulation structure model corresponding to the current temperature by constructing an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load are as follows: Based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, construct the overall equilibrium equation and calculate the strain vector and curvature vector corresponding to the current temperature. The target warpage value of the encapsulation structure model corresponding to the current temperature is calculated based on the curvature vector and the structural parameters.
3. The warpage simulation method for the packaging structure according to claim 1, characterized in that, The target characteristic parameters include the target elastic modulus, the target Poisson's ratio, and the target coefficient of thermal expansion. The steps for determining the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature based on the target characteristic parameters include: Calculate the stiffness matrix of each active layer of the encapsulation structure model corresponding to the current temperature based on the target elastic modulus and the target Poisson's ratio; The target stiffness matrix of the encapsulation structure model is calculated based on the stiffness matrix of each active layer corresponding to the current temperature. The thermal strain change of each active layer is calculated based on the target thermal expansion coefficient, and the target thermal internal force and target thermal bending moment of the encapsulation structure model are calculated based on the thermal strain change. After calculating the stiffness matrix of each active layer of the encapsulation structure model corresponding to the current temperature based on the target elastic modulus and the target Poisson's ratio, the method further includes: The position of the neutral axis is determined by weighting the thickness direction based on the stiffness matrix of each active layer at the current temperature.
4. The warpage simulation method for the packaging structure according to claim 3, characterized in that, The steps for calculating the thermal strain change of each active layer based on the target thermal expansion coefficient include: Obtain the target reference temperature corresponding to each active layer; For each active layer, the thermal strain change of each active layer is obtained by integrating the target thermal expansion coefficient based on the target reference temperature and the current temperature using a piecewise integral function.
5. The warpage simulation method for the packaging structure according to claim 1, characterized in that, The steps for obtaining the birth state of each activation layer in the encapsulation structure model corresponding to the current time point include: The activation layers in the encapsulation structure model corresponding to the current time point are compared with the activation layers in the encapsulation structure model corresponding to the reference time point to determine the birth layer corresponding to the current time point; wherein, the reference time point is a time point in the target time point set that is adjacent to the current time point and located before the current time point; Obtain the strain vector and curvature vector of the encapsulated structure model corresponding to the reference time point, and use the strain vector and curvature vector as the birth state of the birth layer corresponding to the current time point, thereby obtaining the birth state of each active layer in the encapsulated structure model corresponding to the current time point.
6. The warpage simulation method for the packaging structure according to claim 1, characterized in that, The steps for determining the target time point set based on the process parameters include: Based on the process parameters, the activation time point, failure time point, and process time point corresponding to each temperature node of the process curve for each activation layer in the packaging structure are obtained. The activation time points, failure time points, and process time points are sorted according to time order to obtain a set of time points to be processed. Obtain a preset temperature difference value, and judge the temperature change within the time interval corresponding to adjacent time points in the set of time points to be processed based on the preset temperature difference value; If the temperature change between adjacent time points is greater than the preset temperature difference value, then at least one interpolation time point is inserted between the adjacent time points, and the set of time points to be processed after the insertion of the interpolation time point is taken as the target time point set.
7. The warpage simulation method for the packaging structure according to claim 1, characterized in that, The steps of determining the encapsulation structure model corresponding to each of the target time points based on the target time point set include: Obtain the target geometry pattern; Based on the target geometric pattern, the geometry construction function is invoked to determine the encapsulation structure model corresponding to each time point in the target time point set.
8. The warpage simulation method for the packaging structure according to claim 1, characterized in that, After determining the target warpage value of the encapsulation structure model corresponding to the current temperature by constructing an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, the method further includes: The process parameters of the target packaging structure are adjusted based on the target warpage value of the packaging structure model.
9. A warpage simulation device with a packaged structure, characterized in that, include: The acquisition module is used to acquire the material characteristic parameters and process parameters of the packaging structure. The first determining module is used to determine a target time point set based on the process parameters, wherein the target time point set includes multiple different time points; The second determining module is used to determine the encapsulation structure model corresponding to each of the target time points based on the target time point set. The third determining module is used to determine the target feature parameters of each activation layer in the packaging structure model corresponding to the current temperature based on the material feature parameters. The fourth determining module is used to determine the target stiffness matrix, target thermal internal force, and target thermal bending moment of the encapsulation structure model corresponding to the current temperature based on the target characteristic parameters. The fifth determining module is used to obtain the birth state of each activation layer in the encapsulation structure model corresponding to the current time point, and determine the birth additional load of the encapsulation structure model based on the birth state; The sixth determining module is used to construct an overall equilibrium equation based on the target stiffness matrix, the target thermal internal force, the target thermal bending moment, and the additional load, and to determine the target warpage value of the encapsulation structure model corresponding to the current temperature.
10. An electronic device, characterized in that, include: Memory, used to store one or more programs; A processor, when the one or more programs are executed by the processor, implements the method as described in any one of claims 1-8.