Display device

Abstract

A display device is provided. The display device includes an active area and a non-active area, the non-active area including a first non-active area adjacent to the active area, a bending area extending from the first non-active area, and a second non-active area extending from one side of the bending area. The display device includes: a first glass substrate disposed in an active area; a second glass substrate disposed in the second non-active area; an etch stop layer disposed to overlap the bending region; a link line disposed on the etch stop layer across the bending region; a micro-coating layer disposed to overlap with at least a portion of the second non-active region and the first non-active region, and disposed on the link line in the bending region; and a rigid member disposed on the micro-coating layer adjacent to the bending region to overlap at least a portion of the second glass substrate.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0131865, filed with the Korean Intellectual Property Office on September 27, 2024, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to display devices, and more specifically, to display devices that reduce stress while bending the bezel. Background Technology

[0004] Typically, display devices are widely used as displays for a wide variety of electronic devices, such as mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation systems, ultra-mobile PCs (UMPCs), mobile phones, smartphones, tablet PCs (personal computers), watch phones, electronic pads, wearable devices, portable information devices, vehicle control displays, televisions, laptops, and monitors.

[0005] Recently, research and development are underway on display devices that maximize screen size by reducing the bezel area where images are not displayed at the same size as the display panel. Summary of the Invention

[0006] One objective of this disclosure is to provide a display device that minimizes the width of the border area.

[0007] Another objective of this disclosure is to provide a display device that reduces deformation of the microcoating while bending the bezel.

[0008] Another objective of this disclosure is to provide a display device that reduces stress generated in bending regions and improves reliability.

[0009] The purpose of this disclosure is not limited to the purposes mentioned above, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0010] According to one aspect of this disclosure, a display device includes an active region and an active region, the active region including a first active region adjacent to the active region, a curved region extending from the first active region, and a second active region extending from one side of the curved region. The display device includes: a first glass substrate disposed in the active region; a second glass substrate disposed in the second active region; an etch stop layer disposed overlapping the curved region; a connecting line disposed across the curved region on the etch stop layer; a microcoating disposed on the connecting line in the curved region; and a rigid member disposed adjacent to the curved region on the microcoating to overlap at least a portion of the second glass substrate.

[0011] Further details of the exemplary embodiments are included in the detailed description and accompanying drawings.

[0012] According to this disclosure, when the frame is bent, the deformation of the microcoating in the bent area is suppressed to reduce the stress caused by bending.

[0013] According to this disclosure, rigid members are disposed on the microcoating to reduce stress on the link lines in the bending region.

[0014] According to this disclosure, the stress generated in the bending region due to expansion and contraction in high and low temperature environments is reduced, thereby improving reliability.

[0015] The effects of this disclosure are not limited to those illustrated above, and many more effects are included in this specification. Attached Figure Description

[0016] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0017] Figure 1 This is a plan view of a display device according to an exemplary embodiment of the present disclosure;

[0018] Figure 2 This is a cross-sectional view of the active region of a display device according to an exemplary embodiment of the present disclosure;

[0019] Figure 3A It is along Figure 1 A cross-sectional view of the state before bending, taken from section A-A';

[0020] Figure 3B It is along Figure 1 A cross-sectional view of the bent state taken from A-A';

[0021] Figure 4 This is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure;

[0022] Figure 5A and Figure 5B This is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0023] Figure 6A and Figure 6B This is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0024] Figure 7A and Figure 7B This is a plan view of a display device according to another exemplary embodiment of the present disclosure;

[0025] Figure 8A and Figure 8B The results are based on simulations of the stress in the display device of the comparative implementation scheme;

[0026] Figure 9A and Figure 9B The simulation results of the stress of a display device according to an exemplary embodiment of this disclosure; and

[0027] Figure 10 The graph is obtained by analyzing the stress of the link line in the bending region of the rigid member according to an exemplary embodiment of this disclosure via the finite element method. Detailed Implementation

[0028] The advantages and features of this disclosure, as well as methods for achieving these advantages and features, will become apparent from the exemplary embodiments and accompanying drawings described in the following detailed description. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. Exemplary embodiments have been provided by way of example only to enable those skilled in the art to fully understand the scope and nature of this disclosure.

[0029] The shapes, dimensions, ratios, angles, numbers, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, the same reference numerals generally denote the same elements. Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “consisting of” as used herein are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural form.

[0030] Even without explicit explanation, components are interpreted as including the normal tolerance range.

[0031] When using terms such as “on top of,” “above,” “below,” and “next to” to describe the positional relationship between two parts, one or more parts may be positioned between the two parts unless these terms are used with the terms “immediately adjacent” or “directly.”

[0032] When a component or layer is placed "on" another component or layer, the other layer or component can be directly inserted on or between the other component.

[0033] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may be the second component in the technical concept of this disclosure.

[0034] Throughout the specification, the same reference numerals generally denote the same elements.

[0035] For ease of description, the dimensions and thickness of each component shown in the accompanying drawings are illustrated by example, and this disclosure is not limited to the dimensions and thickness of the components shown.

[0036] The features of various embodiments of this disclosure may be partially or completely dependent on or combined with each other and may be interlocked and operated in technically different ways, and the embodiments may be implemented independently or in relation to each other.

[0037] In the following, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0038] Figure 1 This is a plan view of a display device according to an exemplary embodiment of the present disclosure.

[0039] Reference Figure 1 The glass substrate 110 of the display device 100 according to an exemplary embodiment of the present disclosure includes an active region AA and a non-active region NA surrounding the periphery of the active region AA. In the active region, sub-pixels are provided that actually emit light through thin-film transistors and light-emitting diodes.

[0040] The active region AA can be an area with a plurality of sub-pixels for displaying an image. Each of the plurality of sub-pixels is a separate unit that emits light, and a light-emitting diode and a driving circuit can be formed in each of the plurality of sub-pixels PX. For example, a display element for displaying an image and a circuit unit for driving the display element can be provided in the plurality of sub-pixels. At this time, when the display device 100 is an organic light-emitting display device, the display element may include an organic light-emitting diode, and when the display device 100 is a liquid crystal display device, the display element may include a liquid crystal element. The plurality of sub-pixels may include red sub-pixels, green sub-pixels, blue sub-pixels, and white sub-pixels, but are not limited thereto. The driving circuit may include a variety of thin-film transistors, storage capacitors, and wiring for driving the plurality of sub-pixels. For example, the driving circuit may be configured with a variety of components such as driving thin-film transistors, switching thin-film transistors, sensing thin-film transistors, storage capacitors, gate lines, and data lines, but is not limited thereto.

[0041] In the non-active region NA, circuitry such as the gate driver GD for driving the display device 100 and various signal lines such as scan lines SL for gate lines can be provided. Furthermore, the gate driver GD for driving the display device 100 can be disposed on the glass substrate 110 as a gate-in-panel (GIP), or connected to the glass substrate 110 as a tape carrier package (TCP) or chip-on-film (COF).

[0042] The non-active region NA may include a first non-active region NA1 adjacent to the active region AA, a curved region BA extending from the first non-active region NA1, and a second non-active region NA2 extending from one side of the curved region BA.

[0043] Specifically, the first non-active region NA1 is the region in which no image is displayed and which is configured to surround the active region AA. Various wiring and driving ICs for driving a plurality of sub-pixels disposed in the active region AA can be configured in the first non-active region NA1. The first non-active region NA1 in which no image is displayed may be a border region, and exemplary embodiments of this disclosure are not limited thereto.

[0044] A portion of the non-active region NA can be generated by Figure 1 The region bends in the direction indicated by the arrow. As described above, the region that is bent can be referred to as the bending region BA. In other words, the bending region BA is a portion of the first non-active region NA1 extending from one side of the non-active region NA, and can be the region to be bent.

[0045] Pad units are provided in the second non-active region NA2, which extends from one side of the curved region BA.

[0046] PAD. A pad unit (PAD) may include a plurality of pad electrodes connected to an external module.

[0047] Various wirings are formed on the glass substrate 110. These wirings can be located in the active region AA of the glass substrate 110, and also in the non-active region NA. Specifically, the link line LNK formed in the non-active region NA is connected to a driving circuit, such as a gate driver GD or a data driver, to transmit signals.

[0048] The link line LNK is formed of a conductive material, and can be formed of a conductive material with excellent ductility to reduce cracking when the glass substrate 110 is bent. For example, the link line LNK can be formed of conductive materials with excellent ductility such as gold (Au), silver (Ag), and aluminum (Al), and can be formed of one of a variety of conductive materials for the active region AA. The link line LNK can also be configured as an alloy of molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and silver (Ag) and magnesium (Mg). Furthermore, the link line LNK can be configured as a multilayer structure containing a variety of conductive materials, and can be configured, for example, as a three-layer structure of titanium (Ti) / aluminum (Al) / titanium (Ti), but the structure of the link line LNK according to this disclosure is not limited to this.

[0049] When the link line LNK formed in the bending region BA bends, a tensile force is applied to it. For example, a maximum tensile force is applied to the link line LNK extending on the glass substrate 110 in the same direction as the bending direction (indicated by the arrow), making it possible for cracks to form. When the cracks are severe, the line may break. Therefore, the rigid member 160 is provided adjacent to the bending region BA on the link line LNK to minimize the tensile force, thereby minimizing the formation of cracks. (Refer to...) Figure 3A and Figure 3B Describe the rigid component in detail.

[0050] Figure 2 This is a cross-sectional view of the active region of a display device according to an exemplary embodiment of the present disclosure.

[0051] Reference Figure 2 The display device 100 includes a glass substrate 110, a thin-film transistor (TFT), a connecting electrode (CE), and a light-emitting diode (LED) 130.

[0052] The glass substrate 110 is used to support and protect the components of the display device 100 disposed thereon. The glass substrate may be formed of glass.

[0053] A buffer layer 111 is disposed on the glass substrate 110. The buffer layer 111 can prevent moisture or other impurities from penetrating through the glass substrate 110 and can planarize the surface of the glass substrate 110. However, the buffer layer 111 is not a necessary configuration and can be omitted depending on the type of thin-film transistor (TFT) disposed on the glass substrate 110.

[0054] A thin-film transistor (TFT) is disposed on a glass substrate 110. The TFT can drive a light-emitting diode (LED) 130. The TFT includes a gate electrode GE, a source electrode SE, a drain electrode DE, and a semiconductor layer ACT.

[0055] A semiconductor layer ACT is disposed on the buffer layer 111. When driving the thin-film transistor (TFT), a channel is formed in the semiconductor layer ACT. The semiconductor layer ACT can be configured with amorphous silicon or polycrystalline silicon, but is not limited to these. Polycrystalline silicon has better mobility than amorphous silicon and offers lower power consumption and superior reliability for use in driving thin-film transistors in pixels.

[0056] Furthermore, the semiconductor layer ACT can be configured using oxide semiconductors. Oxide semiconductors exhibit excellent mobility and uniformity. The semiconductor layer ACT can be configured using oxide semiconductors in the following ways: quaternary metal oxides based on indium tin gallium zinc oxide (InSnGaZnO); ternary metal oxides based on indium gallium zinc oxide (InGaZnO), indium tin zinc oxide (InSnZnO), indium aluminum zinc oxide (InAlZnO), tin gallium zinc oxide (SnGaZnO), aluminum gallium zinc oxide (AlGaZnO), and tin aluminum zinc oxide (SnAlZnO). Materials based on indium zinc oxide (InZnO), tin zinc oxide (SnZnO), aluminum zinc oxide (AlZnO), zinc magnesium oxide (ZnMgO), tin magnesium oxide (SnMgO), indium magnesium oxide (InMgO), and indium gallium oxide (InGaO); materials based on indium oxide (InO), tin oxide (SnO), and zinc oxide (ZnO), but the composition ratio of each element is not limited.

[0057] The semiconductor layer ACT may include a source region and a drain region containing p-type or n-type impurities, as well as a channel region between the source and drain regions, and also includes a lightly doped region between the source and drain regions adjacent to the channel region.

[0058] The source and drain regions are highly doped with impurities, and the source electrode SE and drain electrode DE of a thin-film transistor (TFT) can be connected to the source and drain regions, respectively. P-type or n-type impurities can be used as impurity ions. P-type impurities can be one of boron (B), aluminum (Al), gallium (Ga), and indium (In), while n-type impurities can be one of phosphorus (P), arsenic (As), and antimony (Sb).

[0059] Depending on the NMOS or PMOS thin-film transistor structure, the channel region of the semiconductor layer ACT can be doped with n-type or p-type impurities. NMOS or PMOS thin-film transistors can be used as thin-film transistors included in an electroluminescent display device according to an exemplary embodiment of this disclosure.

[0060] The first insulating layer 112 is an insulating layer used to insulate the semiconductor layer ACT from the gate electrode GE, and is configured as a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), and is configured to prevent current flowing through the semiconductor layer ACT from flowing to the gate electrode GE. Silicon oxide has lower ductility than metals but better ductility than silicon nitrides, and can be formed from a single layer or multiple layers depending on its properties.

[0061] The gate electrode (GE) functions as a switch, turning the thin-film transistor (TFT) on or off based on an electrical signal transmitted from the outside via the gate line. The gate electrode can be configured from a single layer or multiple layers of conductive metals or alloys thereof, such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd), but is not limited thereto.

[0062] The source electrode SE and drain electrode DE are connected to the data line and transmit electrical signals from the thin-film transistor TFT to the light-emitting diode 130. The source electrode SE and drain electrode DE may be configured as a single layer or multiple layers of a metallic material that is a conductive metal or an alloy thereof, such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd), but are not limited thereto.

[0063] To insulate the gate electrode GE from the source electrode SE and the drain electrode DE, a second insulating layer 113 can be provided between the gate electrode GE and the source electrode SE and the drain electrode DE. The second insulating layer 113 is configured as a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx). The source electrode SE and the drain electrode DE are electrically connected to the semiconductor layer ACT through contact holes in the first insulating layer 112 and the second insulating layer 113.

[0064] A passivation layer, configured as an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx), can be further disposed on the thin-film transistor (TFT). The passivation layer can be used to suppress unwanted electrical connections between components above and below it, and to suppress contamination or damage from external sources. However, depending on the configuration and characteristics of the thin-film transistor (TFT) and the light-emitting diode (LED) 130, the passivation layer can be omitted.

[0065] Based on the placement of the components in the thin-film transistor (TFT), TFTs can be classified into anti-interlaced structures and coplanar structures. In a thin-film transistor with an anti-interlaced structure, the gate electrode is located on the side opposite to the source and drain electrodes relative to the semiconductor layer. For example... Figure 2 As shown, in a thin-film transistor (TFT) with a coplanar structure, the gate electrode GE is located on the same side as the source electrode SE and the drain electrode DE relative to the semiconductor layer ACT.

[0066] Despite Figure 2 Coplanar thin-film transistors (TFTs) have been shown in the present disclosure, but the display device 100 according to the present disclosure may include, but is not limited to, thin-film transistors having an anti-interlaced structure.

[0067] For ease of description, Figure 2 Only the driving thin-film transistor, which can be included in the various thin-film transistors in the display device 100, is shown. However, a switching thin-film transistor and a capacitor may also be included in the display device 100. When a signal is applied from the gate line, the switching thin-film transistor transmits the signal from the data line to the gate electrode of the driving thin-film transistor. The driving thin-film transistor transmits current through the power line via the signal transmitted from the switching thin-film transistor to the anode 131, and controls the emission by the current transmitted to the anode 131.

[0068] A planarization layer 114 is disposed on the thin-film transistor TFT to protect the thin-film transistor TFT, reduce the step caused by the thin-film transistor TFT, and reduce the parasitic capacitance generated between the thin-film transistor TFT, the gate line and the data line and the light-emitting diode 130.

[0069] The planarization layer 114 is an insulating layer that planarizes the upper part of the glass substrate 110. The planarization layer 114 can be formed of organic materials, and can be formed of one or more materials selected from acrylic resins, epoxy resins, phenolic resins, polyamide resins, polyimide resins, unsaturated polyester resins, polyphenylene sulfide resins, and benzocyclobutene, but is not limited thereto.

[0070] A display device 100 according to an exemplary embodiment of the present disclosure may include a first planarization layer 114a and a second planarization layer 114b, which are a plurality of planarization layers 114 sequentially laminated.

[0071] For example, the first planarization layer 114a can be disposed on the thin-film transistor TFT, and the second planarization layer 114b can be disposed on the first planarization layer 114a.

[0072] Furthermore, a buffer layer may be disposed on the first planarization layer 114a. The buffer layer may be configured to protect components disposed on the first planarization layer 114a, and may be configured, for example, as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx). Depending on the configuration and characteristics of the thin-film transistor (TFT) and the light-emitting diode (LED) 130, the buffer layer may be omitted.

[0073] The connection electrode CE is disposed through a contact hole formed in the first planarization layer 114a, and the connection electrode CE is electrically connected to the thin-film transistor TFT. That is, the connection electrode CE is an electrode used to connect the drain electrode DE of the thin-film transistor TFT to the anode 131 of the light-emitting diode 130. The connection electrode CE may be configured from multiple layers, which are formed from conductive materials such as copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0074] A passivation layer, configured as an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx), may be further disposed on the first planarization layer 114a and the connection electrode CE. The passivation layer can be used to suppress unwanted electrical connections between components and to suppress contamination or damage from external sources. However, depending on the configuration and characteristics of the thin-film transistor (TFT) and the light-emitting diode (LED) 130, the passivation layer may be omitted.

[0075] The light-emitting diode 130 is disposed on the second planarization layer 114b and includes an anode 131, a light-emitting layer 133 and a cathode 135.

[0076] The anode 131 can be disposed on the second planarization layer 114b. The anode 131 is an electrode for supplying holes to the light-emitting layer 133 and is connected to the connection electrode CE through a contact hole on the second planarization layer 114b to be electrically connected to the thin-film transistor TFT.

[0077] For example, the anode 131 may be configured with indium tin oxide (ITO) and indium zinc oxide (IZO), which are transparent conductive materials, but is not limited thereto.

[0078] When the display device 100 according to this disclosure is a top-emitting type (which emits light to the upper part on which the cathode 135 is disposed), the anode 131 may also include a reflective layer that allows the emitted light reflected from the anode 131 to be emitted more smoothly to the upper part on which the cathode 135 is disposed.

[0079] For example, the anode 131 may have a two-layer structure in which a transparent conductive layer and a reflective layer, configured of a transparent conductive material, are sequentially laminated, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially laminated. The reflective layer may be silver (Ag) or an alloy containing silver.

[0080] A dam layer 137 is disposed on the anode 131 and the second planarization layer 114b. The dam layer 137 delineates the actual light-emitting area to define the pixel. The dam layer 137 can be formed by photolithography after photoresist is formed on the anode 131. A photoresist is a photosensitive resin whose solubility in a developer changes with the action of light, and a specific pattern can be obtained by exposing and developing the photoresist. Photoresists can be classified into positive photoresists and negative photoresists. A positive photoresist is one in which the solubility of its exposed portion in the developer increases with exposure. When a positive photoresist is developed, a pattern in which the exposed portion is removed is obtained. A negative photoresist is one in which the solubility of its exposed portion in the developer is significantly reduced with exposure. When a negative photoresist is developed, a pattern in which the unexposed portion is removed is obtained.

[0081] To form the light-emitting layer 133 of the light-emitting diode 130, a fine metal mask (FMM) can be used as a deposition mask. To suppress potential damage caused by contact with the deposition mask disposed on the dike layer 137 and to maintain a predetermined distance between the dike layer 137 and the deposition mask, a spacer configured of one of the following transparent organic materials—polyimide, photoacryl, and benzocyclobutene (BCB)—can be disposed above the dike layer 137.

[0082] A light-emitting layer 133 is disposed between the anode 131 and the cathode 135. The light-emitting layer 133 is used to emit light and may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an organic layer, an electron transport layer (ETL), and an electron injection layer (EIL). Depending on the structure or characteristics of the display device 100, some components of the light-emitting layer 133 may be omitted.

[0083] A hole injection layer is disposed on the anode 131 to facilitate hole injection. The hole injection layer can be composed of...

[0084] It is formed by any one or more of HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexanitrile), CuPc (phthalocyanine) and NPD (N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine).

[0085] A hole transport layer is disposed on the hole injection layer to facilitate the transport of holes to the organic layer. For example, the hole transport layer may be formed of any or more of NPD (N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine), TPD (N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), s-TAD (2,2',7,7'-tetratetra(N,N-dimethylamino)-9,9-spirofluorene) and MTDATA (4,4',4”-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine).

[0086] An organic layer is disposed on the hole transport layer and contains a material that emits light of a specific color. The luminescent material can be formed using phosphorescent or fluorescent materials.

[0087] When the organic layer emits red light, the peak emission wavelength can be in the range of 600 nm to 650 nm. The organic layer may comprise a host material, including CBP (4,4'-bis(carbazole-9-yl)biphenyl) or mCP (1,3-bis(carbazole-9-yl)benzene), and the organic layer may be formed from a phosphorescent material containing dopant materials, including one or more of PIQIr(acac) (bis(1-phenylisoquinoline)(acetylacetone)iridium), PQIr(acac) (bis(1-phenylquinoline)(acetylacetone)iridium), PQIr (tris(1-phenylquinoline)iridium), and PtOEP (octaethylporphyrin platinum). Alternatively, the organic layer may be formed from a fluorescent material containing PBD:Eu(DBM)3(Phen) or perylene.

[0088] Here, the peak wavelength λ refers to the maximum wavelength of electroluminescence (EL). The wavelength of light emitted by the organic layer constituting the organic layer is called photoluminescence (PL), and the light emitted due to the influence of the thickness or optical properties of the organic layer is called emissivity. In this case, electroluminescence (EL) refers to the light ultimately emitted by the display device 100, and can be represented by the product of photoluminescence (PL) and emissivity.

[0089] When the organic layer emits green light, the peak emission wavelength is in the range of 520 nm to 540 nm. The organic layer may comprise a host material, including CBP or mCP, and may be formed from a phosphorescent material containing a dopant material, such as an Ir complex, for example, Ir(ppy)3 (tris(2-phenylpyridine)iridium). Alternatively, the organic layer may be formed from a fluorescent material containing Alq3 (tris(8-hydroxyquinoline)aluminum).

[0090] When the organic layer emits blue light, the emission peak wavelength is in the range of 440 nm to 480 nm. The organic layer may comprise a host material, including CBP or mCP, and may be formed of a phosphorescent material comprising a dopant material, including FIrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium). Alternatively, the organic layer may be formed of a fluorescent material, including any one of spiro-DPVBi (4,4'-bis(2,2-diphenyl-vinyl-1-yl)biphenyl), DSA (1,4-di-[4-(N,N-diphenyl)amino]styrylbenzene), a PFO-based polymer, and a PPV-based polymer.

[0091] An electron transport layer is disposed on the organic layer and serves to facilitate the movement of electrons into the organic layer. For example, the electron transport layer can be formed from any or more of the following: Liq (lithium 8-hydroxyquinoline), PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4- (diazole), TAZ (3-(4-biphenyl)4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and BAlq (bis(2-methyl-8-quinoline)-4-(phenylphenol)aluminum).

[0092] An electron injection layer may be further disposed on the electron transport layer. The electron injection layer is an organic layer from which electrons are smoothly injected from the cathode 135, and may be omitted depending on the structure and characteristics of the display device 100. The electron injection layer may be a metal inorganic compound such as BaF2, LiF, NaCl, CsF, Li2O and BaO, or may be any one or more organic compounds selected from HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexanitrile), CuPc (phthalocyanine) and NPD (N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine).

[0093] An electron blocking layer or hole blocking layer that blocks the flow of holes or electrons can be further disposed adjacent to the organic layer. When electrons are injected into the organic layer, they move from the organic layer to pass through the adjacent hole transport layer, or when holes are injected into the organic layer, they move from the organic layer to pass through the adjacent electron transport layer. Therefore, the electron blocking layer or hole blocking layer suppresses this problem, thereby improving luminous efficiency.

[0094] A cathode 135 is disposed on the light-emitting layer 133 to supply electrons to the light-emitting layer 133. Since the cathode 135 needs to supply electrons, the cathode 135 can be made of a metallic material with a low work function, such as magnesium (Mg) or silver-magnesium (Ag:Mg), but is not limited thereto.

[0095] When the display device 100 is a top-emitting type, the cathode 135 can be formed of a transparent conductive oxide based on indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TiO).

[0096] The encapsulation layer 139 may be disposed on the light-emitting diode 130 to prevent the thin-film transistor TFT and the light-emitting diode 130, which are components of the display device 100, from oxidation or damage due to moisture, oxygen, or impurities introduced from the outside. For example, the encapsulation layer 139 may include a first encapsulation layer 139a, a second encapsulation layer 139b, and a third encapsulation layer 139c, but is not limited thereto.

[0097] At this time, the first encapsulation layer 139a and the third encapsulation layer 139c can be configured as inorganic films, and the second encapsulation layer 139b can be configured as an organic film. Among the first encapsulation layer 139a, the second encapsulation layer 139b and the third encapsulation layer 139c, the second encapsulation layer 139b is the thickest and can be used as a planarization layer.

[0098] The first encapsulation layer 139a can be disposed on the cathode 135 and can be positioned as the nearest neighbor to the light-emitting diode 130. The first encapsulation layer 139a can be formed of an inorganic insulating material on which low-temperature deposition can be performed. For example, the first encapsulation layer 139a can be configured as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3), but is not limited thereto. The first encapsulation layer 139a is deposited at a low-temperature atmosphere, so that damage to the light-emitting layer 133, which contains organic materials susceptible to high-temperature atmospheres, can be suppressed during the deposition process.

[0099] The second encapsulation layer 139b can be formed to have a smaller area than the first encapsulation layer 139a. In this case, the second encapsulation layer 139b can be formed to expose both ends of the first encapsulation layer 139a. The second encapsulation layer 139b can serve as a buffer to alleviate interlayer stress caused by bending of the display device 100 and enhance planarization performance.

[0100] For example, the second encapsulation layer 139b can be formed of an organic insulating material, such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon-oxygen carbon (SiOC), but the material of the second encapsulation layer is not limited to these. For example, the second encapsulation layer 139b can be formed by an inkjet method, but is not limited to these.

[0101] The third encapsulation layer 139c can be formed above the glass substrate 110 on which the second encapsulation layer 139b is formed, to cover the top and side surfaces of the second encapsulation layer 139b and the first encapsulation layer 139a. In this case, the third encapsulation layer 139c can minimize or prevent external moisture or oxygen from penetrating into the first encapsulation layer 139a and the second encapsulation layer 139b. For example, the third encapsulation layer 139c can be made of inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3), but is not limited thereto.

[0102] A barrier film may be further disposed on the encapsulation layer 139. The barrier film can delay the penetration of oxygen and moisture from the outside. The barrier film is configured to be a semi-transparent and double-sided adhesive film, and may be configured from any of the following insulating materials: olefin-based insulating materials, acrylic insulating materials, and silicon-based insulating materials. Alternatively, a barrier film configured from any of the following materials may be laminated, but is not limited thereto.

[0103] A polarizer 140 is disposed on the encapsulation layer 139 to selectively transmit light, thereby reducing the reflection of external light incident on the glass substrate 110. Specifically, various metallic materials used in the thin-film transistor TFT, wiring, and light-emitting diode 130 can be disposed on the glass substrate 110. Therefore, external light incident on the glass substrate 110 can be reflected from the metallic materials, potentially reducing the visibility of the display device 100 due to the reflection of external light. In contrast, when the polarizer 140 is provided, it suppresses the reflection of external light, thereby increasing the outdoor visibility of the display device 100. However, depending on the embodiment of the display device 100, the polarizer 140 may be omitted, but is not limited thereto.

[0104] Figure 3A It is along Figure 1A cross-sectional view of the state before bending, taken from section A-A'. Figure 3B It is along Figure 1 A cross-sectional view of the bending state taken from point A-A'. Figure 3A and Figure 3B For ease of explanation, among the various components of the display device 100, only the first glass substrate 110a, the second glass substrate 110b, the etch stop layer 120, the link line LNK, the planarization layer 114, the polarizer 140, the microcoating 150, and the rigid member 160 are schematically shown.

[0105] Reference Figure 3A and Figure 3B The glass substrate 110 includes a first glass substrate 110a disposed in a first non-active region NA1 adjacent to the active region AA, and a second glass substrate 110b disposed in a second non-active region NA2 extending from the curved region BA. The figures show the first glass substrate 110a and the second glass substrate 110b spaced apart from each other, with the curved region BA located therebetween; however, the first glass substrate 110a and the second glass substrate 110b may be at least partially connected.

[0106] Simultaneously, when the mother glass substrate is etched, holes and cells are separated to form a first glass substrate 110a and a second glass substrate 110b of the glass substrate 110. That is, the glass substrate 110 with the curved region BA selectively removed is formed simultaneously, thereby forming a structure with a flexible frame. For example, the process of forming the curved region BA on the glass substrate 110 will be described. A mask is formed on the back surface of the mother glass substrate, and a portion of the mask is removed to form a hole. At this time, the process of forming the hole can be referred to as a process of removing the mask from the glass substrate by laser cutting and separating the hole and cells from the mother glass substrate. Next, after performing primary etching on a portion of the glass substrate through the mask according to the portion where the curved region BA is to be formed, the mask is removed, and the entire back surface of the glass substrate can be etched. After reducing the thickness of the back surface of the glass substrate, the portion of the primary etching is completely removed to form the curved region BA on the glass substrate 110.

[0107] The first glass substrate 110a may be disposed in the active region AA and the first non-active region NA1 adjacent to the active region AA. The first glass substrate 110a may be disposed adjacent to the curved region BA extending from the first non-active region NA1.

[0108] The first glass substrate 110a may include a top surface 110a1 in contact with the etch stop layer 120, a bottom surface 110a2 opposite to the top surface 110a1, and a side surface 110a3 connecting the end of the top surface 110a1 adjacent to the bending region BA to the end of the bottom surface 110a2.

[0109] The end of the top surface 110a1 of the first glass substrate 110a can be positioned closer to the bending region BA than the end of the bottom surface 110a2. Therefore, the side surface 110a3 can be defined by an inclined surface connecting the end of the top surface 110a1 and the end of the bottom surface 110a2. The inclination angle of the side surface 110a3 can be 45 degrees, but is not limited thereto. The side surface 110a3 can be formed by an inclined surface or a concave surface.

[0110] The second glass substrate 110b is disposed in the second non-active region NA2. That is, the second glass substrate 110b can be disposed in the second non-active region NA2 extending from the curved region BA. Therefore, one end of the second glass substrate 110b can contact the curved region BA.

[0111] The end of the top surface 110b1 of the second glass substrate 110b can be positioned closer to the bending region BA than the end of the bottom surface 110b2. The inclination angle of the side surface 110b3 can be 45 degrees, but is not limited thereto. The side surface 110b3 adjacent to the bending region BA can be formed by an inclined surface or a concave surface.

[0112] The first glass substrate 110a and the second glass substrate 110b may have a thickness of 0.01 mm to 1.0 mm to maintain the flatness of the top surfaces 110a1 and 110b1 or to prevent moisture or oxygen from penetrating into the display device 100. Ideally, the thickness of the first glass substrate 110a and the second glass substrate 110b may be 100 μm. However, the thickness of the first glass substrate 110a and the second glass substrate 110b is not limited to this and may vary depending on the design requirements of the display device 100.

[0113] The etch stop layer 120 is configured to overlap with the curved region BA. In this case, the bottom surface of the etch stop layer 120 can be exposed from the first glass substrate 110a and the second glass substrate 110b within the curved region BA. Specifically, the etch stop layer 120 can be configured to suppress damage caused by etching during the etching process required to form the first glass substrate 110a and the second glass substrate 110b. That is, the etch stop layer 120 can be configured to protect the area above the etch stop layer 120 during the process of forming the side surfaces 110a3 and 110b3 of the first glass substrate 110a and the second glass substrate 110b. Therefore, the etch stop layer 120 can be configured to overlap with the curved region BA of the display device 100. The etch stop layer 120 can have a larger area than the area overlapping the top surface 110a1 of the first glass substrate 110a and the top surface 110b1 of the second glass substrate 110b, or a larger area than the curved region BA.

[0114] Furthermore, the etch stop layer 120 can be disposed in the curved region BA and overlap with the top surface 110a1 of the first glass substrate 110a extending to one side of the curved region BA and with the top surface 110b1 of the second glass substrate 110b extending to the other side of the curved region BA. That is, the etch stop layer 120 can be disposed on the first glass substrate 110a of the first non-active region NA1 and the second glass substrate 110b of the second non-active region NA2. Furthermore, the etch stop layer 120 can be disposed only in the non-active region NA corresponding to the curved region BA, or it can be disposed in the entire first non-active region NA1 including the active region AA, but is not limited thereto.

[0115] The etch stop layer 120 can be configured with organic materials, specifically, with materials resistant to glass etchants and materials with corrosion resistance. For example, etchants including phosphoric acid (H3PO4) or hydrofluoric acid (HF) can be used as etchants for glass etching. The etch stop layer 120 can contain any of the following: silicon-based organic materials, urethane, polyimide, photopolymer acrylic, chromium (Cr), aluminum (Al), platinum (Pt), gold (Au), and nickel (Ni).

[0116] Furthermore, the etch stop layer 120 can be formed by spraying material onto a location set by a mechanical method (e.g., a slot coater, inkjet printer, or dispenser) or by a patterning process using a photomask. In this case, the thickness of the etch stop layer 120 can be from 1 μm to 5 μm. Ideally, the thickness of the etch stop layer 120 can be from 2 μm to 3 μm, but is not limited thereto. However, when the thickness of the etch stop layer 120 is less than 1 μm, the etch stop layer 120 is damaged during the glass etching process that forms the side surfaces 110a3 and 110b3 of the first glass substrate 110a and the second glass substrate 110b. Therefore, the etch stop layer cannot protect the configuration located above the etch stop layer 120. Furthermore, when the thickness of the etch stop layer 120 exceeds 5 μm, there is a risk that the etch stop layer may act as a component hindering bending or be damaged due to compressive forces during bending.

[0117] Therefore, the etch stop layer 120 disposed between the first glass substrate 110a, the second glass substrate 110b, and the link line LNK is included in the bending region BA. Therefore, damage to the display device 100 caused by the glass etching process that forms the side surfaces 110a3 and 110b3 of the first glass substrate 110a and the second glass substrate 110b can be suppressed.

[0118] The link line LNK can be disposed on the etch stop layer 120 across the bending region BA. The link line LNK can be disposed on the same layer as the connection electrode CE. The link line LNK is formed of a conductive material, and can be formed of a conductive material with excellent ductility to reduce cracking when the glass substrate 110 is bent. For example, the link line LNK can be formed of conductive materials with excellent ductility such as gold (Au), silver (Ag), and aluminum (Al), and can be formed of one of a variety of conductive materials for the active region AA. The link line LNK can also be configured as an alloy of molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and silver (Ag) and magnesium (Mg). Furthermore, the link line LNK can be configured as a multilayer structure containing a variety of conductive materials, and for example as a three-layer structure of titanium (Ti) / aluminum (Al) / titanium (Ti), but the structure of the link line LNK according to this disclosure is not limited to this.

[0119] The planarization layer 114 extends over the curved region BA to be applied to the link line LNK.

[0120] Planarization layer 114 is an organic layer and can have a structure in which the second planarization layer 114b is configured to extend to planarize the top surface of the link line LNK and adjust its thickness, while the first planarization layer 114a may not extend. Meanwhile, when the link electrode CE is not provided and the drain electrode DE is directly connected to the anode 131, the link line LNK can be the same layer as the drain electrode DE or the source electrode SE, and can be implemented as a single planarization layer. Although not shown in the figure, the dam layer 137 can also be configured to extend into the bending region BA.

[0121] Polarizer 140 is disposed on the first glass substrate 110a. Polarizer 140 is disposed on the first glass substrate 110a and can contact the microcoating 150 in the first non-active region NA1.

[0122] The microcoating 150 is configured to overlap at least a portion of the first active region NA1 and the second active region NA2, and is disposed on the link line LNK in the curved region BA. The microcoating 150 may be configured to extend into the first active region NA1 to contact the polarizer 140.

[0123] Since microcracks are caused by the tensile force applied to the link line LNK disposed on the etch stop layer 120 during bending, a microcoating 150 can be formed to protect the link line LNK by coating the area to be bent with a resin of a small thickness. The microcoating can be made of resin, and for example, can be made of acrylic materials or urethane acrylates, but is not limited thereto.

[0124] The microcoating 150 can adjust the neutral plane of the bending region BA. The neutral plane refers to a virtual plane that experiences no stress when a structure bends because the compressive and tensile forces applied to the structure cancel each other out. Virtual neutral planes can be formed between structures when two or more structures are laminated. When the entire structure bends in one direction, the structure positioned relative to the neutral plane in the bending direction is compressed by the bending, resulting in a compressive force being applied to it. In contrast, the structure positioned relative to the neutral plane in the opposite direction of the bending direction is stretched by the bending, resulting in a tensile force being applied to it. Typically, when a structure is subjected to tensile force (compressive or tensile), it is more susceptible to stress, making it more prone to fracture when tensile force is applied.

[0125] The etch stop layer 120, located on the lower portion relative to the neutral plane, is compressed and subjected to compressive force, while the link line LNK, located on the upper portion, can be subjected to tensile force, potentially causing cracking due to the tensile force. Therefore, to minimize the tensile force applied to the link line LNK, the microcoating 150 can be located on the neutral plane.

[0126] A microcoating 150 is applied to the bending region BA to raise the neutral plane upwards, and the neutral plane is formed at the same location as the wiring, or the wiring is positioned above the neutral plane. Therefore, no stress or compressive force is applied during bending, thereby suppressing cracking. The modulus of the microcoating 150 can be from 50 MPa to 200 MPa.

[0127] A rigid member 160 is disposed adjacent to the bending region BA on the microcoating 150 to overlap with at least a portion of the second glass substrate 110b. Specifically, the rigid member 160 may be configured to overlap with the end of the top surface 110b1 of the second glass substrate 110b and with the side surface 110b3 of the second glass substrate 110b on the microcoating 150.

[0128] Furthermore, one end of the rigid member 160 adjacent to the bending region BA can be configured to mate with the end of the top surface 110b1 of the second glass substrate 110b. The other end of the rigid member 160 can be configured to mate with the end of the bottom surface 110b2 of the second glass substrate 110b.

[0129] Meanwhile, when one end of the rigid member 160 is positioned further inside the bending region BA than the end of the top surface 110b1 of the second glass substrate 110b, i.e., offset to the left relative to the state shown in the figure, deformation of the microcoating 150 can be suppressed. However, the increased force required for bending makes it difficult to bend the frame.

[0130] Furthermore, when one end of the rigid member 160 is disposed further outward from the bending region BA compared to the end of the top surface 110b1 of the second glass substrate 110b, i.e., offset to the right relative to the state shown in the figure, the deformation of the microcoating 150 may not be significantly suppressed. Therefore, the end of the rigid member 160 adjacent to the bending region BA can be configured to match the end of the top surface 110b1 of the second glass substrate 110b.

[0131] When the rigid member 160 bends, greater stress can be applied to the link line LNK due to the deformation of the microcoating 150, thus suppressing the deformation of the microcoating 150 at the stress-applied corner portion S. At this time, the rigid member 160 can comprise any of polymeric, metallic, and ceramic materials with a stiffness higher than that of the microcoating 150. For example, considering adhesion to the microcoating 150, acrylic polymeric materials are most desirable as the rigid member 160. Acrylic polymeric materials can increase their modulus by adding multifunctional groups to the same material to increase the crosslinking density (structural densification). Furthermore, due to the properties of the material, the rigid member 160 can have high adhesion to metallic materials such as stainless steel, aluminum, and titanium.

[0132] The thickness of the rigid member 160 can be 10% to 50% of the thickness of the microcoating 150. For example, when the thickness of the microcoating 150 is 10 μm, the thickness of the rigid member 160 can be 2 μm.

[0133] Furthermore, the modulus of the rigid member 160 can be 20 to 200 times that of the microcoating 150. Ideally, when the modulus of the microcoating 150 is 109 MPa, the modulus of the rigid member 160 can be 2180 MPa, but is not limited thereto. For example, during bending, the maximum tensile force is applied to the link line LNK extending in the same direction as the bending direction, which may cause cracks. When the cracks are severe, the line may break. That is, during bending, the thickness of the microcoating 150 changes in the corner portion S of the second glass substrate 110b, thereby applying stress to the link line LNK.

[0134] Therefore, the rigid member 160 is positioned on the microcoating 150 adjacent to the bending region BA, which overlaps with the link line LNK, thereby reducing the deformation of the microcoating 150, reducing the stress on the link line LNK and minimizing the tensile stress, thus minimizing the generation of cracks.

[0135] In the following text, we will refer to... Figures 8A to 9B Describe the effects of a display device according to an exemplary embodiment of the present disclosure.

[0136] Figure 8A and Figure 8B The results are based on the simulation of the stress of the display device in the comparative implementation scheme. Figure 9A and Figure 9B These are simulation results of the stress of a display device according to an exemplary embodiment of this disclosure. Here, compared with the display device 100 according to the exemplary embodiment of this disclosure, the display device according to the comparative embodiment does not use the rigid member 160.

[0137] For example, the common conditions of the comparative implementation scheme and the display device 100 according to the exemplary implementation scheme are shown in Table 1.

[0138] [Table 1]

[0139]

[0140]

[0141] Furthermore, in the display device 100 of the exemplary embodiment of the present disclosure, the rigid member 160 has a thickness of 2 μm and a modulus of 2180 MPa.

[0142] In the figure, the X-axis is the distance (mm) from the first glass substrate 110a to the second glass substrate 110b of the display device 100, the Y-axis is the bending angle (°), and the contour line to be measured represents the von Mises stress (MPa). Here, the distance along the X-axis from 0 mm to 0.2 mm is the left portion of the display device 100 (first glass substrate 110a), 0.2 mm to 1.6 mm is the bending region BA, and 1.6 mm to 1.8 mm is the right portion (second glass substrate 110b). When the bezel of the display device bends, the maximum stress is applied to the link line in the right bending region. Therefore, in the magnified view, in the right bending region BA portion (1.55 mm to 1.64 mm), the stress applied to the link line LNK is specifically shown according to the bending angle along the Y-axis.

[0143] Here, von Mises stress represents other stresses, that is, tension and compression represent direction and stress. However, von Mises stress has a scalar form without direction, making it imply complex stress values, such as tension and compression. Therefore, when the von Mises stress reaches the yield stress, it is analyzed that the material yields, and when the von Mises stress decreases, it is analyzed that it moves away from the yield stress value.

[0144] Figure 8A and Figure 8B The plan and cross-sectional views of the display device according to the comparative embodiment show the von Mises stress values ​​applied to the link line according to the bending angle. Figure 9A and Figure 9B The plan and cross-sectional views of a display device 100 according to an exemplary embodiment of the present disclosure show the von Mises stress values ​​applied to the link line according to the bending angle.

[0145] Reference Figure 8A and Figure 8B When the bezel bends, that is, when the 1.61mm to 1.63mm portion of the display device bends 180°, the von Mises stress value applied to the link line LNK located at the end of the second glass substrate 110b is determined to be 1930 MPa. When it bends 60°, the von Mises stress value applied to the link line LNK located at the end of the second glass substrate 110b is determined to be 1591 MPa.

[0146] Reference Figure 9A and Figure 9BWhen the bezel bends, that is, when the 1.61mm to 1.63mm portion of the display device bends 180°, the von Mises stress value applied to the link line LNK located at the end of the second glass substrate 110b is determined to be 1254 MPa. When it bends 60°, the von Mises stress value applied to the link line LNK located at the end of the second glass substrate 110b is determined to be 1160 MPa.

[0147] In other words, it was determined that the maximum stress in the display device 100 according to the exemplary embodiment was reduced by approximately 35.0%.

[0148] Therefore, as a simulation result, in the display device of the comparative embodiment, when the bezel is bent, the microcoating deforms in the bending region BA of the second glass substrate 110b, causing an increase in stress in the underlying layer of the microcoating. It should be understood that as the stress increases as a result, very high stress is locally applied to the corner portion S of the second glass substrate 110b in the bending region BA, and the stress concentrated on the link line LNK is likely to cause cracks.

[0149] Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, stress can be reliably reduced when the bezel bends. Specifically, in the display device 100 according to the exemplary embodiment of the present disclosure, a rigid member 160 is disposed on the microcoating 150 adjacent to the bending region BA. At this time, the rigid member 160 is disposed on the microcoating 150 to overlap at least a portion of the second glass substrate 110b to suppress deformation of the microcoating 150. Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, the rigid member 160 is configured to suppress deformation of the microcoating 150, thereby reducing stress caused by bending.

[0150] Furthermore, in the display device 100 according to an exemplary embodiment of the present disclosure, a rigid member 160 with a stiffness higher than that of the microcoating 150 is provided to reduce the stress on the link line LNK. Specifically, in the display device 100 according to an exemplary embodiment of the present disclosure, a rigid member 160 with a modulus 200 times higher than that of the microcoating 150 is provided to reduce the stress concentrated on the link line LNK. Therefore, in the display device 100 according to an exemplary embodiment of the present disclosure, the rigid member 160 with high stiffness is provided to reduce the stress on the link line LNK and alleviate the stress in the bending area caused by expansion and contraction that may occur in high and low temperature environments. Therefore, the reliability of the display device 100 can be improved.

[0151] Figure 4 This is a cross-sectional view of a display device according to another exemplary embodiment of this disclosure. Figure 4For ease of explanation, only the first glass substrate 110a, the second glass substrate 110b, the etch stop layer 120, the link line LNK, the planarization layer 114, the polarizer 140, the microcoating 150, and the rigid member 260 are shown schematically. Except for the rigid member 260, Figure 4 The display device 200 shown in the figure and Figures 1 to 3B The display device 100 shown is substantially the same, which allows redundant descriptions to be omitted or simplified.

[0152] Reference Figure 4 According to another exemplary embodiment of the present disclosure, the display device 200 may include pad units PAD disposed on a second glass substrate 110b in a second non-active region NA2. In this case, a rigid member 260 is configured to extend toward the pad unit PAD to the end of the microcoating 150. The rigid member 260 is disposed on the microcoating 150 to overlap with the second glass substrate 110b to suppress deformation of the microcoating 150.

[0153] Specifically, the rigid member 260 may be disposed adjacent to the curved region BA on the microcoating 150 to overlap with the second glass substrate 110b. The rigid member 260 may be disposed to overlap with the end of the top surface 110b1 of the second glass substrate 110b and with the microcoating 150 on the second glass substrate 110b. That is, the rigid member 260 may be disposed to overlap with the second non-active region NA2, in addition to the first non-active region NA1 and the curved region BA.

[0154] Furthermore, one end of the rigid member 260 adjacent to the bending region BA can be configured to mate with the end of the top surface 110b1 of the second glass substrate 110b. The other end of the rigid member 260 can be configured to mate with the end of the microcoating 150 on the second glass substrate 110b.

[0155] Meanwhile, when one end of the rigid member 260 is positioned further inside the bending region BA than the end of the top surface 110b1 of the second glass substrate 110b, that is, when it is offset to the left relative to the state shown in the figures, deformation of the microcoating 150 can be suppressed. However, the magnitude of the force required for bending increases, making it difficult to bend the frame.

[0156] Furthermore, when one end of the rigid member 260 is positioned further outward from the end of the top surface 110b1 of the second glass substrate 110b, that is, offset to the right relative to the state shown in the figures, deformation of the microcoating 150 may not be significantly suppressed. Therefore, the end of the rigid member 260 adjacent to the bending region BA can be configured to match the end of the top surface 110b1 of the second glass substrate 110b.

[0157] When the rigid member 260 bends, stress can be further applied to the link line LNK due to the deformation of the microcoating 150, thus suppressing deformation of the microcoating 150 in the portion where stress is applied. At this time, the rigid member 260 can comprise any of a polymeric material, a metallic material, and a ceramic material having a higher stiffness than the microcoating 150. For example, considering adhesion to the microcoating 150, an acrylic polymeric material is most desirable as the rigid member 260. The modulus of acrylic polymeric materials can be increased by adding multifunctional groups to the same material to increase the crosslinking density (structural densification). Furthermore, due to the properties of the material, the rigid member 260 can have high adhesion to metallic materials such as stainless steel, aluminum, and titanium.

[0158] The thickness of the rigid member 260 can be 10% to 50% of the thickness of the microcoating 150. For example, when the thickness of the microcoating 150 is 10 μm, the thickness of the rigid member 260 can be 2 μm.

[0159] Furthermore, the modulus of the rigid member 260 can be 20 to 200 times that of the microcoating 150. Ideally, when the modulus of the microcoating 150 is 109 MPa, the modulus of the rigid member 260 can be 2180 MPa, but is not limited thereto.

[0160] The rigid member 260 is positioned on the microcoating 150 adjacent to the bending region BA, thereby reducing the deformation of the microcoating 150, reducing the stress on the link line LNK and minimizing the tensile force, so as to minimize the occurrence of cracks.

[0161] Therefore, in a display device 200 according to another exemplary embodiment of the present disclosure, the rigid member 260 is configured to extend toward the end of the microcoating 150 toward the pad unit PAD to suppress deformation of the microcoating 150, thereby reducing stress caused by bending.

[0162] Figure 5A and Figure 5B This is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure. Figure 5A and Figure 5B For ease of explanation, only the first glass substrate 110a, the second glass substrate 110b, the etch stop layer 120, the link line LNK, the planarization layer 114, the polarizer 140, the microcoatings 350_1 and 350_2, and the rigid members 160 and 260 are shown schematically. Except for the microcoating 350_1, Figure 5A The display device 300_1 shown in the figure and Figure 3A and Figure 3B The display device 100 shown is essentially the same as that shown, except for the microcoating 350_2. Figure 5B The display device 300_2 shown in the figure and Figure 4 The display device 200 shown is essentially the same. Therefore, redundant descriptions will be omitted or simplified.

[0163] Reference Figure 5A The microcoating 350_1 includes a recess H recessed from the top surface 350f to accommodate the rigid member 160. Therefore, the rigid member 160 can be disposed in the recess H. In this case, the top surface 160f of the rigid member 160 is coplanar with the top surface 350f of the microcoating 350_1, or it can protrude from the top surface 350f of the microcoating 350_1. That is, the top surface 160f of the rigid member 160 can be positioned below the top surface of the polarizer 140.

[0164] The groove H of the microcoating 350_1 is formed adjacent to the curved region BA to overlap with at least a portion of the second glass substrate 110b. Specifically, the groove H of the microcoating 350_1 is formed to overlap with the end of the top surface 110b1 of the second glass substrate 110b and with the side surface 110b3 of the second glass substrate 110b.

[0165] The groove H of the microcoating 350_1 can define the position of the rigid member 160. That is, the rigid member 160 is positioned according to the position of the groove H on which the microcoating 350_1 is formed. One end of the groove H of the microcoating 350_1 can be configured to match the end of the top surface 110b1 of the second glass substrate 110b, and the other end of the groove H of the microcoating 350_1 can be configured to match the end of the bottom surface 110b2 of the second glass substrate 110b.

[0166] Therefore, in a display device 300_1 according to another exemplary embodiment of this disclosure, a rigid member 160 is disposed in a groove H of the microcoating 350_1 overlapping with the link line LNK. Consequently, the deformation of the microcoating 350_1 is reduced, thereby reducing the stress on the link line LNK and minimizing tensile force, thus minimizing crack initiation.

[0167] Reference Figure 5B The microcoating 350_2 includes a recess H from the top surface 350f to accommodate the rigid member 260. The rigid member 260 is disposed in the recess H and extends toward the pad unit PAD to the end of the microcoating 350_2. The top surface 260f of the rigid member 260 is coplanar with the top surface 350f of the microcoating 350_2, or may protrude from the top surface 350f of the microcoating 350_2. That is, the top surface 260f of the rigid member 260 can be configured to be lower than the top surface of the polarizer 140.

[0168] The groove H of the microcoating 350_2 is adjacent to the curved region BA to overlap with the second glass substrate 110b. Specifically, the groove H of the microcoating 350_2 can be formed to match and overlap with the end of the top surface 110b1 of the second glass substrate 110b.

[0169] Furthermore, the groove H of the microcoating 350_2 can define the position of the rigid member 260. That is, the rigid member 260 is positioned according to the position of the groove H on which the microcoating 350_2 is formed. One end of the groove H of the microcoating 350_2 can be formed to match the end of the top surface 110b1 of the second glass substrate 110b, and the other end of the groove H of the microcoating 350_2 can be formed to the end of the microcoating 350_2 on the second glass substrate 110b.

[0170] Therefore, in a display device 300_2 according to another exemplary embodiment of this disclosure, a rigid member 260 is disposed in a groove H of the microcoating 350_2 overlapping with the link line LNK. Consequently, the deformation of the microcoating 350_2 is reduced, thereby reducing the stress on the link line LNK and minimizing tensile force, thus minimizing crack initiation.

[0171] Figure 6A and Figure 6B This is a cross-sectional view of a display device according to another exemplary embodiment of this disclosure. Figure 6A and Figure 6B For ease of explanation, only the first glass substrate 110a, the second glass substrate 110b, the etch stop layer 120, the link line LNK, the planarization layer 114, the polarizer 140, the microcoating 150, the rigid members 160 and 260, and the auxiliary rigid member 461 are shown schematically. Except for the auxiliary rigid member 461, Figure 6A The display device 400_1 shown in the figure and Figure 3A and Figure 3B The display device 100 shown is essentially the same as that shown, except for the auxiliary rigid member 461. Figure 6B The display device 400_2 shown in the figure and Figure 4 The display device 200 shown is essentially the same. Therefore, redundant descriptions will be omitted or simplified.

[0172] Reference Figure 6A and Figure 6B An auxiliary rigid member 461 is disposed adjacent to the bending region BA on the microcoating 150 to overlap with at least a portion of the first glass substrate 110a. In this case, the auxiliary rigid member 461 can be used to suppress deformation of the microcoating 150 by assisting the rigid members 160 and 260.

[0173] Specifically, the auxiliary rigid member 461 can be disposed adjacent to the bending region BA on the microcoating 150 to overlap with the first glass substrate 110a, and can be disposed to overlap with the end and side surfaces 110a3 of the top surface 110a1 of the first glass substrate 110a. That is, the auxiliary rigid member 461 can be disposed to overlap with the first non-active region NA1, and the rigid members 160 and 260 can be disposed to overlap with the second non-active region NA2. The auxiliary rigid member 461 and the rigid members 160 and 260 can be disposed in areas of the microcoating 150 other than the bending region BA.

[0174] Furthermore, the end of the auxiliary rigid member 461 adjacent to the bending region BA can be configured to match the end of the top surface 110a1 of the first glass substrate 110a, and the other end of the auxiliary rigid member 461 can be configured to contact the polarizer 140.

[0175] Meanwhile, when the other end of the auxiliary rigid member 461 is positioned further inside the bending region BA than the end of the top surface 110a1 of the first glass substrate 110a, that is, when it is offset to the right relative to the state shown in the figures, deformation of the microcoating 150 can be suppressed. However, the magnitude of the force required for bending increases, making it difficult to bend the frame. Therefore, the other end of the auxiliary rigid member 461 adjacent to the bending region BA can be configured to match the end of the top surface 110a1 of the first glass substrate 110a.

[0176] The auxiliary rigid member 461 can comprise any of a polymeric material, a metallic material, and a ceramic material having a higher stiffness than the microcoating 150. For example, considering adhesion to the microcoating 150, an acrylic polymeric material is most desirable as the auxiliary rigid member 461. Acrylic polymeric materials can increase their modulus by adding multifunctional groups to the same material to increase the crosslinking density (structural densification). Furthermore, due to the properties of the material, the rigid member 260 can have high adhesion to metallic materials such as stainless steel, aluminum, and titanium.

[0177] The thickness of the auxiliary rigid member 461 can be 10% to 50% of the thickness of the microcoating 150. For example, when the thickness of the microcoating 150 is 10 μm, the thickness of the auxiliary rigid member 461 can be 2 μm.

[0178] Furthermore, the modulus of the auxiliary rigid member 461 can be 20 to 200 times that of the microcoating 150. Ideally, when the modulus of the microcoating 150 is 109 MPa, the modulus of the auxiliary rigid member 461 can be 2180 MPa, but is not limited thereto.

[0179] Therefore, in display devices 400_1 and 400_2 according to another exemplary embodiment of this disclosure, rigid members 160 and 260 and auxiliary rigid member 461 are disposed on microcoating 150 adjacent to the bending region BA. Thus, deformation of microcoating 150 is reduced to decrease stress on the link line LNK and minimize tensile force, thereby minimizing crack initiation.

[0180] Figure 7A and Figure 7B This is a plan view of a display device according to another exemplary embodiment of this disclosure. Figure 7A and Figure 7B For ease of explanation, only the first glass substrate 110a, the second glass substrate 110b, the etch stop layer 120, the link line LNK, the planarization layer 114, the polarizer 140, the microcoatings 550_1 and 550_2, the rigid members 160 and 260, and the auxiliary rigid member 461 are shown schematically. Except for the microcoating 550_1, Figure 7A The display device 500_1 shown in the figure and Figure 6A The display device 400_1 shown is essentially the same, except for the microcoating 550_2. Figure 7B The display device 500_2 shown in the figure and Figure 6B The display device 400_2 shown is essentially the same. Therefore, redundant descriptions will be omitted or simplified.

[0181] Reference Figure 7A The microcoating 550_1 includes a plurality of recesses H1 and H2 recessed from the top surface 550f to accommodate the auxiliary rigid member 461 and the rigid member 160. The plurality of recesses H1 and H2 may include a first recess H1 and a second recess H2.

[0182] The plurality of grooves H1 and H2 of the microcoating 550_1 can define the positions of the auxiliary rigid member 461 and the rigid member 160. That is, the auxiliary rigid member 461 and the rigid member 160 can be positioned according to the positions of the plurality of grooves H1 and H2 on which the microcoating 550_1 is formed. Specifically, the auxiliary rigid member 461 can be disposed in the first groove H1, and the rigid member 160 can be disposed in the second groove H2.

[0183] The first groove H1 of the microcoating 550_1 is formed adjacent to the curved region BA on the microcoating 550_1 to overlap with the first glass substrate 110a in the first non-active region NA1. Specifically, the first groove H1 of the microcoating 550_1 can be formed to overlap with the end of the top surface 110a1 and the side surface 110a3 of the first glass substrate 110a.

[0184] Furthermore, the end of the first groove H1 adjacent to the curved region BA can be configured to match the end of the top surface 110a1 of the first glass substrate 110a, and the other end of the first groove H1 can be configured to contact the polarizer 140.

[0185] The second groove H2 of the microcoating 550_1 is formed adjacent to the curved region BA to overlap with at least a portion of the second glass substrate 110b in the second non-active region NA2. Specifically, the second groove H2 of the microcoating 550_1 may be formed to overlap with the end of the top surface 110b1 of the second glass substrate 110b and with the side surface 110b3 of the second glass substrate 110b.

[0186] Furthermore, the end of the second groove H2 adjacent to the curved region BA is formed to match the end of the top surface 110b1 of the second glass substrate 110b, and the other end of the second groove H2 can be configured to match the end of the bottom surface 110b2 of the second glass substrate 110b.

[0187] The top surface 461f of the auxiliary rigid member 461 and the top surface 160f of the rigid member 160 can be the same plane as the top surface 550f of the microcoating 550_1, or protrude from the top surface 550f of the microcoating 550_1. That is, the top surface 461f of the auxiliary rigid member 461 and the top surface 160f of the rigid member 160 can be set below the top surface of the polarizer 140.

[0188] Therefore, in a display device 500_1 according to another exemplary embodiment of this disclosure, auxiliary rigid members 461 and rigid members 160 are disposed in a plurality of grooves H1 and H2 of the microcoating 550_1 overlapping with the link line LNK. Thus, the deformation of the microcoating 550_1 is reduced, thereby reducing the stress on the link line LNK and minimizing tensile forces, thereby minimizing crack initiation.

[0189] Reference Figure 7B The microcoating 550_2 includes a plurality of recesses H1 and H3 recessed from the top surface 550f to accommodate the auxiliary rigid member 461 and the rigid member 260. The plurality of recesses H1 and H3 may include a first recess H1 and a third recess H3.

[0190] The plurality of grooves H1 and H3 of the microcoating 550_2 can define the positions of the auxiliary rigid member 461 and the rigid member 260. That is, the auxiliary rigid member 461 and the rigid member 260 can be positioned according to the positions of the plurality of grooves H1 and H3 on which the microcoating 550_2 is formed. Specifically, the auxiliary rigid member 461 can be disposed in the first groove H1, and the rigid member 260 can be disposed in the third groove H3.

[0191] The first groove H1 of the microcoating 550_2 is formed adjacent to the curved region BA on the microcoating 550_2 to overlap with the first glass substrate 110a in the first non-active region NA1. Specifically, the first groove H1 of the microcoating 550_2 may be formed to overlap with the end of the top surface 110a1 and the side surface 110a3 of the first glass substrate 110a.

[0192] Furthermore, the end of the first groove H1 adjacent to the curved region BA can be configured to match the end of the top surface 110a1 of the first glass substrate 110a, and the other end of the first groove H1 can be configured to contact the polarizer 140.

[0193] The third groove H3 of the microcoating 550_2 is formed adjacent to the curved region BA to overlap with the second glass substrate 110b in the second non-active region NA2. Specifically, one end of the third groove H3 of the microcoating 550_2 can be formed to match the end of the top surface 110b1 of the second glass substrate 110b, and the other end of the third groove H3 of the microcoating 550_2 can be formed to the end of the microcoating 550_2 on the second glass substrate 110b. Therefore, the rigid member 260 is disposed in the third groove H3 and extends toward the pad unit PAD to the end of the microcoating 550_2.

[0194] At this time, the top surface 461f of the auxiliary rigid member 461 and the top surface 260f of the rigid member 260 can be the same plane as the top surface 550f of the micro-coating 550_2, or protrude from the top surface 550f of the micro-coating 550_2. That is, the top surface 461f of the auxiliary rigid member 461 and the top surface 260f of the rigid member 260 can be set to be lower than the top surface of the polarizer 140.

[0195] Therefore, in a display device 500_2 according to another exemplary embodiment of this disclosure, auxiliary rigid members 461 and rigid members 260 are disposed in a plurality of grooves H1 and H3 of the microcoating 550_2 overlapping with the link line LNK, extending toward the end of the microcoating 550_2 toward the pad unit PAD. Thus, the deformation of the microcoating 550_2 is reduced, thereby reducing the stress on the link line LNK and minimizing tensile forces to minimize crack initiation.

[0196] Figure 10 The graph is obtained by analyzing the stress in the bending region along the link line of the modulus of a rigid member according to an exemplary embodiment of this disclosure using the finite element method. Figure 10 The experimental conditions used to analyze the stress of the link wire are shown in Table 1.

[0197] Reference Figure 10The X-axis is a multiple of the modulus of the microcoating 150. For example, when the value of the X-axis is 10, this means the value obtained by multiplying the modulus of the microcoating by 10. The Y-axis is the maximum von Mises stress of the link line LNK.

[0198] In other words, this graph confirms the change in the maximum von Mises stress of the link line LNK after bending when the modulus of the rigid member 160 analyzed by the finite element method increases to a multiple of the modulus of the micro-coating 150.

[0199] As an experimental result, the modulus of the rigid member 160 gradually increases based on the modulus of the microcoating 150, leading to the understanding that the von Mises stress of the link line LNK gradually decreases during bending. That is, it is understood that at a point where the modulus of the rigid member 160 is 20 times that of the microcoating 150, the von Mises stress of the link line LNK decreases from an initial value of approximately 1900 MPa or higher with a steep slope to approximately 1400 MPa.

[0200] Subsequently, in the section where the modulus of the rigid member 160 is 20 to 80 times that of the microcoating 150, the von Mises stress of the link line LNK decreases from about 1400 MPa to about 1300 MPa with a gentle slope, and at the point where the modulus of the rigid member 160 is greater than 80 times that of the microcoating 150, that is, in the section where the modulus of the rigid member 160 is 80 to 200 times that of the microcoating 150, the von Mises stress of the link line LNK is saturated.

[0201] Therefore, the display device 100 according to an exemplary embodiment of this disclosure includes a rigid member 160, the modulus of which is 20 to 200 times that of the microcoating 150. Thus, the thickness of the microcoating 150 changes during bending at the corner portion S of the second glass substrate 110b to reduce the stress applied to the link line LNK.

[0202] Therefore, the display device 100 according to the exemplary embodiment of this disclosure reduces the deformation of the microcoating 150 to reduce the stress on the link line LNK and minimize tensile force, thereby minimizing crack formation. Furthermore, it alleviates the stress in the bending region BA caused by expansion and contraction in high and low temperature environments, thereby improving the reliability of the display device 100.

[0203] Exemplary embodiments of this disclosure can also be described as follows:

[0204] According to one aspect of this disclosure, a display device is provided. The display device includes an active region and an passive region, the passive region including a first passive region adjacent to the active region, a curved region extending from the first passive region, and a second passive region extending from one side of the curved region. The display device includes: a first glass substrate disposed in the active region; a second glass substrate disposed in the second passive region; an etch stop layer disposed overlapping the curved region; a link line disposed on the etch stop layer across the curved region; a microcoating disposed overlapping at least a portion of the second passive region and the first passive region, and disposed on the link line in the curved region; and a rigid member disposed adjacent to the curved region on the microcoating to overlap at least a portion of the second glass substrate.

[0205] The microcoating may include a recess from the top surface to accommodate the rigid member, and the rigid member is disposed in the recess.

[0206] The top surface of the rigid member may be coplanar with the top surface of the microcoating or protrude from the top surface of the microcoating.

[0207] The display device may further include: an auxiliary rigid member disposed adjacent to the bending region on the micro-coating to overlap with at least a portion of the first glass substrate.

[0208] The rigid member can be configured to overlap with the end of the top surface of the second glass substrate.

[0209] The ends of the top surfaces of the first glass substrate and the second glass substrate may be positioned closer to the curved region than the ends of the bottom surfaces.

[0210] The first glass substrate and the second glass substrate may have inclined or recessed side surfaces adjacent to the curved region.

[0211] The rigid member can be disposed on the microcoating to overlap with the side surface of the second glass substrate.

[0212] One end of the rigid member adjacent to the bending region may be configured to match the end of the top surface of the second glass substrate.

[0213] The display device may further include: a pad unit disposed in the second non-active region. The rigid member may extend toward the pad unit to the end of the microcoating.

[0214] The thickness of the rigid member can be 10% to 50% of the thickness of the microcoating.

[0215] The modulus of the microcoating can be from 50 MPa to 200 MPa.

[0216] The modulus of the rigid component can be 20 to 200 times that of the micro-coating.

[0217] The rigid component may comprise any one of polymeric, metallic, and ceramic materials with a stiffness higher than that of the microcoating.

[0218] The etch stop layer may be disposed on the first glass substrate in the first non-active region and on the second glass substrate in the second non-active region, and the bottom surface of the etch stop layer is exposed between the first glass substrate and the second glass substrate in the curved region.

[0219] The thickness of the etch stop layer can be from 1 μm to 5 μm.

[0220] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in many different forms without departing from the technical spirit of the present disclosure. Therefore, exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical spirit of the present disclosure. The scope of the technical spirit of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. The scope of protection of the present disclosure should be interpreted based on the appended claims, and all technical ideas within their equivalents should be interpreted as falling within the scope of the present disclosure.

Claims

1. A display device comprising an active region and an passive region, the passive region comprising a first passive region adjacent to the active region, a curved region extending from the first passive region, and a second passive region extending from one side of the curved region, the display device comprising: A first glass substrate, wherein the first glass substrate is disposed in the active region; A second glass substrate is disposed in the second non-active region; An etch stop layer is provided, the etch stop layer being configured to overlap with the curved region; A link line is disposed on the etch stop layer and extends across the bending region; A microcoating, wherein the microcoating is configured to overlap with at least a portion of the second non-active region and the first non-active region, and is disposed on the link line in the curved region; as well as A rigid member is disposed adjacent to the curved region on the microcoating to overlap with at least a portion of the second glass substrate.

2. The display device of claim 1, wherein the microcoating includes a groove recessed from the top surface of the microcoating to receive the rigid member, and the rigid member is disposed in the groove.

3. The display device according to claim 2, wherein the top surface of the rigid member is coplanar with or protrudes from the top surface of the microcoating.

4. The display device according to claim 1, further comprising: An auxiliary rigid member is disposed adjacent to the bending region on the microcoating to overlap with at least a portion of the first glass substrate.

5. The display device according to claim 1, wherein the rigid member is configured to overlap with an end of the top surface of the second glass substrate.

6. The display device according to claim 1, wherein the end of the top surface of the first glass substrate and the end of the top surface of the second glass substrate are each configured to be closer to the curved region than the end of the bottom surface of the first glass substrate and the end of the bottom surface of the second glass substrate.

7. The display device according to claim 6, wherein the first glass substrate and the second glass substrate have inclined or recessed side surfaces adjacent to the curved region.

8. The display device of claim 7, wherein the rigid member is disposed on the microcoating to overlap with the side surface of the second glass substrate.

9. The display device according to claim 7, wherein one end of the rigid member adjacent to the bending region is configured to match the end of the top surface of the second glass substrate.

10. The display device according to claim 1, further comprising: The pad unit is disposed in the second non-active region. The rigid member extends toward the pad unit to the end of the microcoating.

11. The display device according to claim 1, wherein the thickness of the rigid member is 10% to 50% of the thickness of the microcoating.

12. The display device according to claim 1, wherein the modulus of the microcoating is from 50 MPa to 200 MPa.

13. The display device according to claim 12, wherein the modulus of the rigid member is 20 to 200 times the modulus of the micro-coating.

14. The display device according to claim 1, wherein the rigid member comprises any one of a polymer material, a metallic material, and a ceramic material having a stiffness higher than that of the microcoating.

15. The display device according to claim 1, wherein the etch stop layer is disposed on the first glass substrate in the first non-active region and on the second glass substrate in the second non-active region, and The bottom surface of the etch stop layer is exposed between the first glass substrate and the second glass substrate in the curved region.

16. The display device according to claim 1, wherein the thickness of the etch stop layer is 1 μm to 5 μm.

Images