Passivation solution for perovskite film layer interface, passivation layer, preparation method of passivation layer and battery

Abstract

The invention relates to the technical field of perovskite batteries, in particular to a passivation solution for a perovskite film layer interface, a passivation layer, a preparation method of the passivation layer and a battery. The invention provides a passivation solution for a perovskite film interface, the passivation solution comprises a passivator and a solvent, and the passivator comprises a nicotinic acid compound and / or an isonicotinic acid compound. The passivation solution acts on a perovskite film layer interface and can passivate perovskite defects, lone electron pairs of C = O on carboxyl interact with under-coordinated Pb < 2 + >, non-radiative recombination loss can be reduced, defect ion migration is inhibited, meanwhile, the passivation effect is improved through cooperation with different substituted functional groups on pyridine, the quality of a perovskite film layer is improved, and the perovskite film layer is prepared. The ultraviolet light stability of the cell is improved, and the photoelectric conversion efficiency is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of perovskite batteries, in particular to a passivation liquid for perovskite film layer interface, a passivation layer, a preparation method thereof and a battery. BACKGROUND

[0002] The decomposition failure of perovskite under ultraviolet light irradiation seriously affects the photoelectric performance of the perovskite assembly and reduces the power generation efficiency, so it is essential to carry out effective ultraviolet light protection before using the perovskite solar cell. However, there are still few reports on improving the ultraviolet light stability of perovskite.

[0003] The ultraviolet light stability of the perovskite assembly in the prior art is poor, and the ultraviolet cutoff layer will reduce the light utilization rate and reduce the power.

[0004] Therefore, it is crucial to improve the ultraviolet light stability of the perovskite battery assembly and improve the photoelectric conversion efficiency.

[0005] Therefore, the present application is proposed. SUMMARY

[0006] One object of the present application is to provide a passivation liquid for perovskite film layer interface to solve the technical problems of poor ultraviolet light stability and low photoelectric conversion efficiency of the perovskite assembly in the prior art.

[0007] Another object of the present application is to provide a passivation layer acting on the perovskite film layer interface, which can improve the quality of the perovskite thin film and further improve the ultraviolet light stability of the perovskite battery.

[0008] Another object of the present application is to provide a preparation method of the passivation layer.

[0009] Another object of the present application is to provide a perovskite battery.

[0010] In order to achieve the above objects of the present application, the following technical solutions are adopted:

[0011] A passivation liquid for perovskite film layer interface, the passivation liquid comprising a passivation agent and a solvent, the passivation agent comprising a nicotinic acid compound and / or an isonicotinic acid compound.

[0012] In some embodiments, the nicotinic acid compound comprises at least one of 5-aminonicotinic acid, 5-hydroxynicotinic acid, 5-bromo-2-aminonicotinic acid and 2-chloronicotinic acid.

[0013] In some embodiments, the isonicotinic acid compound comprises isonicotinic acid and / or an isonicotinic acid derivative, the isonicotinic acid derivative comprising at least one of 2-fluoroisonicotinic acid, 2-aminoisonicotinic acid and 2-hydroxyisonicotinic acid.

[0014] In some embodiments, the concentration of the passivation agent is 0.05-0.2 mg / mL.

[0015] In some embodiments, the solvent comprises an alcohol solvent.

[0016] In some embodiments, the functional group of the passivation agent comprises a carbonyl and a pyridine, and one or at least two of an ester group, an amino group, and a halogen.

[0017] In some embodiments, the preparation method of the passivation solution comprises mixing the passivation agent and the solvent, wherein the mixing comprises at least one of ultrasonic, stirring, and heating.

[0018] In some embodiments, the temperature of the heating is 40-60℃.

[0019] A passivation layer is prepared by using the passivation solution, and the passivation layer covers the surface of the perovskite film layer, and / or the passivation layer covers at least the surface of the exposed perovskite layer at the scribe line.

[0020] In some embodiments, the thickness of the passivation layer is 1-10 nm.

[0021] The preparation method of the passivation layer comprises the following steps:

[0022] The passivation solution is coated on the surface of the perovskite film layer in the substrate, and then heat treatment is performed.

[0023] And / or, the passivation solution is coated on the surface of the back electrode layer in the substrate, and then heat treatment is performed.

[0024] And / or, the passivation solution is coated on the scribe line in the substrate, and then heat treatment is performed.

[0025] In some embodiments, the temperature of the heat treatment is 70-120℃, and the time of the heat treatment is 5-15 min.

[0026] A perovskite battery comprises a substrate and the passivation layer on the surface of the substrate, and the substrate comprises a conductive substrate, a first charge transport layer, and a perovskite film layer arranged in sequence.

[0027] In some embodiments, the perovskite battery further comprises a second charge transport layer and a back electrode layer arranged in sequence on the surface of the passivation layer.

[0028] Compared with the prior art, the present application has the following advantages:

[0029] (1) The passivation solution of the present application acts on the interface of the perovskite film layer, and can passivate the perovskite defects, wherein the lone pair of electrons of C=O on the carboxyl group interacts with the under-coordinated Pb 2+The interaction can reduce non-radiative recombination loss and inhibit defect ion migration, and meanwhile, the different functional groups substituted on the pyridine can improve the passivation effect, improve the quality of the perovskite film layer, improve the ultraviolet light stability of the battery, and improve the photoelectric conversion efficiency.

[0030] (2) The passivation layer is used on the interface of the perovskite film layer, is conducive to reducing non-radiative recombination loss, inhibiting defect ion migration, improving the quality of the perovskite film layer, and further improving the ultraviolet light stability of the perovskite battery and the photoelectric conversion efficiency.

[0031] (3) The preparation method of the passivation layer is simple and easy to implement, the passivation layer can be obtained by coating a passivation liquid on the surface of the perovskite film layer and then performing heat treatment, the passivation layer is used on the perovskite film layer, can have a suitable passivation effect, improve the quality of the perovskite film layer, improve the ultraviolet light stability of the perovskite battery, and improve the photoelectric conversion efficiency of the battery. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or the prior art description. Obviously, the drawings described below are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0033] Figure 1 Stability curves of perovskite batteries in Examples 1-4 and Comparative Example 2 of the present application. DETAILED DESCRIPTION

[0034] The embodiments of the present application will be described in detail below with reference to the examples, but those skilled in the art will understand that the following examples are only used to illustrate the present application and should not be regarded as limiting the scope of the present application. If the specific conditions are not specified in the examples, the conventional conditions or the conditions recommended by the manufacturer are used. If the reagents or instruments used are not specified by the manufacturer, they are all conventional products that can be obtained by purchase.

[0035] According to one aspect of the present application, the present application relates to a passivation liquid for the interface of a perovskite film layer, the passivation liquid comprising a passivation agent and a solvent, the passivation agent comprising a nicotinic acid compound and / or an isonicotinic acid compound.

[0036] The passivation liquid of the present application is used on the interface of the perovskite film layer and can passivate perovskite defects, wherein the lone pair of C=O on the carboxyl group interacts with the under-coordinated Pb 2+The interaction can reduce non-radiative recombination loss and inhibit defect ion migration, while the different functional groups substituted on the pyridine can enhance the passivation effect, improve the quality of the perovskite film layer, improve the ultraviolet light stability of the battery, and improve the photoelectric conversion efficiency.

[0037] In some embodiments, the functional groups of the passivation agent contain a carbonyl group and a pyridine group, and one or at least two of an ester group, an amino group, and a halogen group.

[0038] In some embodiments, the nicotinic acid compound includes at least one of 5-aminonicotinic acid, 5-hydroxynicotinic acid, 5-bromo-2-aminonicotinic acid, and 2-chloronicotinic acid. In some embodiments, the isonicotinic acid compound includes isonicotinic acid and / or an isonicotinic acid derivative, and the isonicotinic acid derivative includes at least one of 2-fluoroisonicotinic acid, 2-aminoisonicotinic acid, and 2-hydroxyisonicotinic acid. Taking 5-aminonicotinic acid as an example, in addition to the passivation effect of the carboxyl group and the pyridine group, the amino group can also form a hydrogen bond to inhibit ion migration and improve the ultraviolet light stability of the perovskite. In some embodiments, the passivation agent can be any one or a combination of the above, such as a combination of 5-aminonicotinic acid and 5-hydroxynicotinic acid, a combination of 5-bromo-2-aminonicotinic acid and isonicotinic acid, a combination of 2-chloronicotinic acid, 5-bromo-2-aminonicotinic acid, and isonicotinic acid, and the like.

[0039] In some embodiments, the passivation agent is selected from a nicotinic acid compound and an isonicotinic acid compound, and the mass ratio of the nicotinic acid compound to the isonicotinic acid compound is (2-4):1, such as 2:1, 2.5:1, 3:1, 3.5:1, or 4:1, and the like.

[0040] In some embodiments, the concentration of the passivation agent is 0.05-0.2 mg / mL, including but not limited to 0.05 mg / mL, 0.08 mg / mL, 0.1 mg / mL, 0.12 mg / mL, 0.15 mg / mL, 0.18 mg / mL, 0.2 mg / mL, and the like, or a range value between any two thereof.

[0041] In some embodiments, the solvent includes an alcohol solvent, such as at least one of isopropyl alcohol and ethanol.

[0042] In some embodiments, the preparation method of the passivation solution for the perovskite film layer interface includes: mixing and processing a passivation agent and a solvent, and the mixing and processing includes at least one of ultrasonic, stirring, and heating. In some embodiments, the temperature of the heating is 40-60°C, such as 40°C, 43°C, 45°C, 48°C, 50°C, 52°C, 55°C, 58°C, or 60°C, and the like, or a range value between any two thereof. Adopting a suitable heat treatment temperature is conducive to accelerating the solvent and ensuring the passivation effect of the passivation solution.

[0043] According to another aspect of the present application, the present application also relates to a passivation layer prepared by the passivation solution, which covers the surface of the perovskite film layer. And / or, the passivation layer covers at least the surface of the perovskite layer exposed at the scribe line.

[0044] The passivation layer of the present application acts on the interface of the perovskite film layer, which can reduce the non-radiative recombination loss, inhibit the migration of defect ions, improve the quality of the perovskite film, and further improve the ultraviolet light stability of the perovskite solar cell. After laser scribing of the perovskite, the passivation material is coated in the scribe groove for further protection of the exposed perovskite after scribing, and improvement of the stability.

[0045] In some embodiments, the thickness of the passivation layer is 1-10 nm, including but not limited to 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any range between any two of them. The present application uses a passivation layer with a suitable thickness to improve the ultraviolet light stability of the perovskite solar cell, while ensuring light utilization and power.

[0046] According to another aspect of the present application, the present application also relates to a preparation method of the passivation layer, which comprises the following steps:

[0047] The passivation solution is coated on the surface of the perovskite film layer in the substrate, and then heat treated.

[0048] And / or, the passivation solution is coated on the surface of the back electrode layer in the substrate, and then heat treated.

[0049] And / or, the passivation solution is coated at the scribe line in the substrate, and then heat treated.

[0050] The preparation method of the passivation layer of the present application is simple and easy to operate. By coating the passivation solution on the surface of the perovskite film layer, and / or coating the passivation solution on the surface of the back electrode layer in the substrate, and / or coating the passivation solution at the scribe line in the substrate, and then heat treated, the passivation layer can be obtained. The passivation layer acts on the perovskite film layer, which can have a suitable passivation effect, improve the quality of the perovskite film layer, improve the ultraviolet light stability of the perovskite solar cell, and improve the photoelectric efficiency. In fact, nicotinic acid compounds or isonicotinic acid compounds do not belong to ultraviolet absorbers, but after using nicotinic acid compounds or isonicotinic acid compounds as the passivation layer in the present application, the inventors unexpectedly found that the passivation layer can greatly improve the ultraviolet light stability of the perovskite solar cell.

[0051] In some embodiments, the temperature of the heat treatment is 70-120℃, including but not limited to 70℃, 80℃, 85℃, 90℃, 95℃, 100℃, 110℃, 115℃ or 120℃, or a range between any two of them. The time of the heat treatment is 5-15min, including but not limited to 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min or 15min, or a range between any two of them. The present application adopts appropriate heat treatment temperature and time, thereby ensuring that the passivation solution and the perovskite film layer fully act, so as to improve the film layer quality and the ultraviolet light stability of the perovskite.

[0052] In some embodiments, based on a substrate of 2.5*2.5cm 2 , the coating volume of the passivation solution is 20-50μL, such as 20μL, 25μL, 30μL, 35μL, 40μL or 50μL, etc.

[0053] According to another aspect of the present application, the present application also relates to a perovskite battery, comprising a substrate and a passivation layer on the surface of the substrate, wherein the substrate comprises a conductive substrate, a first charge transport layer and a perovskite film layer arranged in sequence.

[0054] The perovskite battery of the present application can improve the ultraviolet light stability of the battery and improve the photoelectric conversion efficiency by preparing a passivation layer on the surface of the perovskite film layer.

[0055] In some embodiments, the perovskite battery further comprises a second charge transport layer and a back electrode layer arranged in sequence on the surface of the passivation layer.

[0056] In some embodiments, the perovskite film layer is prepared from a perovskite solution, and the concentration of the perovskite solution is 1-1.5mol / L, and the perovskite precursor in the perovskite solution is Cs n FA 1-n BX3 or Cs n MA 1-n BX3, wherein 0 + n<1, wherein the A-site cation can be an organometallic cation (K+, Rb+, Cs+) or an organic cation (MA + , FA 2+ , B-site is Pb 2 and / or Sn +X is a halogen element. In some embodiments, raw materials cesium iodide (Csl), formamidinium iodide (FAI), methylammonium chloride (MACl), and lead iodide (Pbl2) are dissolved in DMF, DMSO or other suitable solvents in proportion, and a perovskite solution is obtained by shaking and mixing uniformly. The perovskite solution is coated on a substrate with a first electron transport layer by spin coating, blade coating or slot coating, and the like. After two-step annealing, the first step is 60-80°C for 1-10 min, and the second step is 100-150°C for 10-60 min, a perovskite film layer with a thickness of 1-10 nm is formed.

[0057] In some embodiments, the perovskite battery structure can be a formal structure or an inverse structure, both of which include a transparent substrate (a conductive layer ITO or FTO), a first charge transport layer, a perovskite film layer, a second charge transport layer, and an electrode layer. In some embodiments, a perovskite solar cell using an inverse structure is transparent conductive layer, hole transport layer (NiOx, PTAA or SAM material), perovskite film layer, electron transport layer (C60 / PCB composite layer, PCB is 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), and back electrode (Cu and / or Ag).

[0058] The following specific examples and comparative examples are further explained.

[0059] Example 1

[0060] A method for preparing a perovskite battery includes the following steps:

[0061] (1) A 20 nm thick nickel oxide hole transport layer is prepared on a conductive substrate (transparent conductive layer FTO) with a size of 2.5x2.5 cm 2 by magnetron sputtering.

[0062] (2) A perovskite solution is prepared: raw materials cesium iodide (Csl), formamidinium iodide (FAI), and lead iodide (Pbl2) are dissolved in 1 mL of DMF solvent in proportion, and the perovskite precursor is Cs 0.15 FA 0.85 P b I3, the concentration of the perovskite solution is 1.2 mol / L, and the perovskite solution is obtained by shaking and mixing uniformly. On the nickel oxide layer, the perovskite solution is coated by a doctor blade, the amount is 35 μL, first annealed at 70°C on a heating table for 2 min, and then annealed at 120°C for 30 min, finally forming a 3D perovskite film layer, and obtaining a substrate.

[0063] (3) 35 μL of passivation solution is coated on the perovskite film layer of the substrate by using a doctor blade, the passivation solution comprising a passivation agent 5-aminonicotinic acid and a solvent isopropyl alcohol, the concentration of 5-aminonicotinic acid being 0.05 mg / mL; the passivation solution is obtained by ultrasonic treatment of a mixture of 5-aminonicotinic acid and isopropyl alcohol at 50°C; then annealing at 70°C for 10 min to form a passivation layer with a thickness of 5 nm.

[0064] (4) C60 with a thickness of 20 nm and BCP with a thickness of 7 nm are respectively evaporated on the surface of the passivation layer to form an electron transport layer.

[0065] (5) Cu is deposited on the surface of the electron transport layer by using a vacuum evaporation method to form a back electrode layer with a thickness of 90 nm.

[0066] Example 2

[0067] A preparation method of a perovskite battery, which is different from that of Example 1 is that:

[0068] The concentration of 5-aminonicotinic acid is 0.1 mg / mL.

[0069] Example 3

[0070] A preparation method of a perovskite battery, which is different from that of Example 1 is that:

[0071] The concentration of 5-aminonicotinic acid is 0.15 mg / mL.

[0072] Example 4

[0073] A preparation method of a perovskite battery, which is different from that of Example 1 is that:

[0074] The concentration of 5-aminonicotinic acid is 0.2 mg / mL.

[0075] Example 5

[0076] A preparation method of a perovskite battery, which is different from that of Example 2 is that:

[0077] The passivation agent is 5-hydroxy nicotinic acid.

[0078] Example 6

[0079] A preparation method of a perovskite battery, which is different from that of Example 2 is that:

[0080] The passivation agent is 5-bromo-2-aminonicotinic acid.

[0081] Example 7

[0082] A preparation method of a perovskite battery, which is different from that of Example 2 is that:

[0083] The passivating agent is isonicotinic acid (C6H5NO2).

[0084] Example 8

[0085] The method for preparing a perovskite solar cell differs from that in Example 2 in that:

[0086] The passivating agent is 2-chloronicotinic acid.

[0087] Example 9

[0088] The method for preparing a perovskite solar cell differs from that in Example 2 in that:

[0089] The passivating agents are 2-hydroxyisonicotinic acid and 5-bromo-2-aminonicotinic acid, with a mass ratio of 1:2.

[0090] Example 10

[0091] The method for preparing a perovskite solar cell differs from that in Example 2 in that:

[0092] The passivating agents are 2-fluoroisonicotinic acid, 5-hydroxynicotinic acid and 5-bromo-2-aminonicotinic acid, with a mass ratio of 1:1:2.

[0093] Example 11

[0094] The method for preparing a perovskite solar cell differs from that in Example 2 in that:

[0095] The passivation solution had a volume of 45 μL and was obtained by ultrasonic treatment of a mixture of 5-aminonicotinic acid and isopropanol at 40 °C. Then, it was annealed at 90 °C for 8 min to form a passivation layer with a thickness of 7 nm.

[0096] Example 12

[0097] The method for preparing a perovskite solar cell differs from that in Example 2 in that:

[0098] The passivation solution had a volume of 30 μL and was obtained by ultrasonic treatment of a mixture of 5-aminonicotinic acid and isopropanol at 60 °C. Then, it was annealed at 120 °C for 5 min to form a passivation layer with a thickness of 4 nm.

[0099] Comparative Example 1

[0100] A method for preparing a perovskite solar cell differs from that in Example 1 in that:

[0101] Without performing step (3), the electron transport layer and the back electrode layer will be prepared directly on the perovskite film layer of the substrate.

[0102] Comparative Example 2

[0103] A method for preparing a perovskite solar cell includes the following steps:

[0104] (1) Perform the operation according to step (1) of Example 1.

[0105] (2) Take the raw materials cesium iodide (CsI), formamidinium hydroiodate (FAI), and lead iodide (PbI2) and dissolve them in 1 mL of DMF solvent according to the specified ratio. The perovskite precursor is CsI. 0.15 FA 0.85 P b I3 was used to prepare a perovskite solution with a concentration of 1.2 mol / L. The solution was shaken and mixed thoroughly to obtain a perovskite solution. Then, 0.1 mg of 5-aminonicotinic acid was added to the perovskite solution to make its concentration 0.1 mg / mL, resulting in a perovskite mixture. The perovskite mixture was then coated onto the nickel oxide layer using a scraper with a volume of 35 μL. The mixture was first annealed at 70 °C for 2 min on a heating stage, and then annealed at 120 °C for 30 min to finally form a 3D perovskite film.

[0106] (3) C60 with a thickness of 20 nm and BCP with a thickness of 7 nm are deposited on the surface of the above perovskite film to form an electron transport layer.

[0107] (4) Cu is deposited on the surface of the electron transport layer by vacuum evaporation to form a back electrode layer with a thickness of 90 nm.

[0108] Experimental Example

[0109] The perovskite solar cells obtained in each embodiment and comparative example were subjected to performance testing. The test light intensity using a solar simulator was 100 mW / cm². 2 The test results are shown in Table 1. In the table, Isc represents the short-circuit current; Voc represents the open-circuit voltage; FillFactor represents the fill factor, which is used to represent the ratio between the battery output current and the output voltage; Efficiency represents the efficiency, which is the proportion of input energy that the perovskite battery converts into useful output energy.

[0110] The stability curves of the perovskite solar cells in Examples 1-4 and Comparative Example 2 under 365nm ultraviolet light irradiation are shown below. Figure 1 As shown.

[0111] Table 1 Test Results

[0112]

[0113]

[0114] As can be seen from the above, the passivation liquid in each embodiment of the present invention, as an interface passivation liquid for perovskite films, is beneficial to reduce non-radiative recombination loss, suppress defect ion migration, improve the quality of perovskite films, improve the ultraviolet light stability of perovskite solar cells, and improve the photoelectric conversion efficiency of solar cells. Figure 1 The UV stability of the battery in Example 1 is improved by nearly 30%, and it still retains more than 90% efficiency after 600 hours.

[0115] The perovskite film layer of the battery in Comparative Example 1 was not passivated, resulting in poor ultraviolet light stability and poor photoelectric conversion efficiency.

[0116] Comparative Example 2 uses a passivation liquid for bulk passivation, resulting in a battery with poor ultraviolet light stability and poor photoelectric conversion efficiency.

[0117] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A passivation solution for perovskite film interfaces, characterized in that, The passivation solution for the perovskite film interface includes a passivating agent and a solvent, wherein the passivating agent includes nicotinic acid compounds and / or isonicotinic acid compounds.

2. The passivation solution for the perovskite film interface according to claim 1, characterized in that, It includes at least one of the following features (1) to (5): (1) The nicotinic acid compounds include at least one of 5-aminonicotinic acid, 5-hydroxynicotinic acid, 5-bromo-2-aminonicotinic acid and 2-chloronicotinic acid; (2) The isonicotinic acid compounds include isonicotinic acid and / or isonicotinic acid derivatives, wherein the isonicotinic acid derivatives include at least one of 2-fluoroisonicotinic acid, 2-aminoisonicotinic acid and 2-hydroxyisonicotinic acid; (3) The concentration of the passivating agent is 0.05–0.2 mg / mL; (4) The solvent includes alcohol solvents; (5) The functional groups of the passivating agent contain carbonyl and pyridine, as well as one or more of ester, amino, and halogen groups.

3. The passivation solution for the perovskite film interface according to claim 1, characterized in that, The method for preparing the passivation solution includes: mixing a passivating agent and a solvent, wherein the mixing process includes at least one of ultrasound, stirring and heating.

4. The passivation solution for the perovskite film interface according to claim 3, characterized in that, The heating temperature is 40–60°C.

5. A passivation layer, characterized in that, The passivation layer is prepared using any one of the passivation solutions described in claims 1 to 4, and the passivation layer covers the surface of the perovskite film. And / or, the passivation layer at least covers the surface of the exposed perovskite layer at the scribing lines.

6. The passivation layer according to claim 5, characterized in that, The thickness of the passivation layer is 1–10 nm.

7. The method for preparing the passivation layer as described in claim 5 or 6, characterized in that, Includes the following steps: The passivation solution is coated onto the surface of the perovskite film in the substrate, and then heat-treated. And / or, apply passivation solution to the surface of the back electrode layer in the substrate, and then perform heat treatment; And / or, apply passivation solution to the scribing lines in the substrate and then perform heat treatment.

8. The method for preparing the passivation layer according to claim 7, characterized in that, The heat treatment temperature is 70–120°C, and the heat treatment time is 5–15 min.

9. A perovskite battery, characterized in that, The substrate includes a substrate and a passivation layer as described in claim 5 or 6 located on the surface of the substrate, wherein the substrate includes a conductive substrate, a first charge transport layer and a perovskite film layer disposed sequentially.

10. The perovskite solar cell according to claim 9, characterized in that, The perovskite solar cell further includes a second charge transport layer and a back electrode layer sequentially stacked on the surface of the passivation layer.

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