Perovskite crystalline silicon laminated cell structure
By using single-walled carbon nanotubes as the tunneling layer material in perovskite-silicon tandem solar cells, the sputtering damage and cost issues of transparent conductive oxides were solved, achieving efficient photoelectric conversion and improved stability.
Patent Information
- Application Number
- CN202411326042.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-23
- Publication Date
- 2026-03-27
AI Technical Summary
In existing perovskite-silicon tandem solar cells, the preparation method of using transparent conductive oxide as the intermediate layer has the risk of sputtering energy damage, and increases costs and affects electrical and optical performance.
Single-walled carbon nanotubes are used as the tunneling layer material, and the top cell and crystalline silicon cell are connected by methods such as chemical vapor deposition to ensure good conductivity and transparency.
It improves the photoelectric conversion efficiency of perovskite-silicon tandem solar cells, enhances electrical and optical performance, reduces production costs, and improves stability and mechanical durability.
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Figure CN121751881A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of solar cells, and designs a perovskite cell, in particular to a perovskite crystalline silicon laminated cell structure. BACKGROUND
[0002] The efficiency of the perovskite crystalline silicon laminated cell exceeds the theoretical limit of the crystalline silicon cell, and is expected to further reduce the cost by improving the conversion efficiency, so as to realize the cheap and flat price of the solar cell. In the laminated cell, the intermediate layer between the bottom cell and the top cell is the core part, and the quality of the intermediate layer is a key factor affecting the performance of the solar cell.
[0003] For example, for the perovskite crystalline silicon laminated cell structure using TCO (transparent conductive oxide) as the intermediate layer, the common method for preparing TCO is magnetron sputtering, which has the risk of sputtering energy damage to the crystalline silicon bottom cell; and using TCO and / or a heavily doped silicon layer as the intermediate layer will increase the preparation cost of the intermediate layer on the one hand, and will also affect the electrical and optical properties of the perovskite crystalline silicon laminated cell structure due to the large absorption of TCO to the near-infrared spectrum. SUMMARY
[0004] The purpose of the present application is to provide a perovskite crystalline silicon laminated cell structure, which connects the top cell and the crystalline silicon cell through single-walled carbon nanotubes, so that the perovskite crystalline silicon laminated cell structure has both electrical and optical properties, thereby improving the photoelectric conversion efficiency.
[0005] To achieve this purpose of the application, the following technical solutions are adopted:
[0006] The present application provides a perovskite crystalline silicon laminated cell structure, which comprises a top cell, a bottom cell and a tunneling layer connecting the top cell and the bottom cell;
[0007] The top cell is a perovskite cell;
[0008] The material of the tunneling layer comprises single-walled carbon nanotubes;
[0009] The bottom cell is a crystalline silicon cell.
[0010] The single-walled carbon nanotube has excellent transparency and conductivity, which is beneficial to improve the photoelectric conversion efficiency of the perovskite crystalline silicon tandem battery structure; the single-walled carbon nanotube also has good chemical stability and thermal stability, which is helpful to improve the stability and service life of the perovskite crystalline silicon tandem battery structure; the high strength and flexibility of the single-walled carbon nanotube can also improve the mechanical durability of the perovskite crystalline silicon tandem battery structure, so that it can withstand bending and folding in daily use. The perovskite crystalline silicon tandem battery structure provided by the application realizes the connection of the top cell and the crystalline silicon cell through the single-walled carbon nanotube, so that the perovskite crystalline silicon tandem battery structure has both electrical performance and optical performance, thereby improving the photoelectric conversion efficiency.
[0011] Preferably, the thickness of the tunneling layer is 5-15 nm.
[0012] Preferably, the bottom cell comprises an HJT cell, a TOP-Con cell or a PERC cell, preferably an HJT cell.
[0013] Preferably, the band gap of the bottom cell is 0.9-1.2 eV.
[0014] Preferably, the band gap of the top cell is 1.6-1.8 eV.
[0015] Preferably, the perovskite crystalline silicon tandem battery structure comprises a bottom electrode layer, a bottom cell, a tunneling layer, a top cell, a light-transmitting layer and a gate electrode arranged in layers.
[0016] Preferably, the hole transport layer or the electron transport layer in the perovskite cell is connected with the tunneling layer.
[0017] Preferably, the material of the hole transport layer comprises a carbazole phosphoric acid self-assembled material.
[0018] As a preferred technical scheme of the perovskite crystalline silicon tandem battery structure provided by the application, the perovskite crystalline silicon tandem battery structure comprises a bottom electrode layer, a bottom cell, a tunneling layer, a top cell, a light-transmitting layer and a gate electrode arranged in layers.
[0019] The bottom cell is an HJT cell, and the band gap is 0.9-1.2 eV.
[0020] The material of the tunneling layer is a single-walled carbon nanotube, and the thickness is 5-15 nm.
[0021] The top cell is a perovskite cell, and the band gap is 1.6-1.8 eV.
[0022] The hole transport layer in the perovskite cell is connected with the tunneling layer, and the material of the hole transport layer is Me-4PACz.
[0023] Compared with the prior art, the application has the following beneficial effects:
[0024] The perovskite crystalline silicon tandem cell structure provided by the application realizes the connection of the top cell and the crystalline silicon heterojunction cell through the conductive carbon material, so that the perovskite crystalline silicon tandem cell structure has both electrical performance and optical performance, thereby improving the photoelectric conversion efficiency. BRIEF DESCRIPTION OF DRAWINGS
[0025] Figure 1 A schematic diagram of the perovskite crystalline silicon tandem cell structure provided for Embodiment 1 of the application.
[0026] 1, a bottom electrode layer; 2, a transparent conductive layer; 3, a P-type hydrogenated amorphous silicon layer; 4, a first intrinsic hydrogenated amorphous silicon layer; 5, a single crystal silicon layer; 6, a second intrinsic hydrogenated amorphous silicon layer; 7, an N-type hydrogenated amorphous silicon layer; 8, a tunneling layer; 9, a hole transport layer; 10, a perovskite layer; 11, a C60 layer; 12, a SnO2 layer; 13, a light transmission layer; 14, a gate electrode; and 15, an anti-reflection layer. DETAILED DESCRIPTION
[0027] The technical solutions of the application will be further described below through specific embodiments. Those skilled in the art should understand that the embodiments are only used to help understand the application and should not be regarded as specific limitations on the application.
[0028] In a conventional perovskite crystalline silicon tandem cell structure, a transparent conductive oxide is generally used to connect the top cell and the bottom cell, but the preparation method of the transparent conductive oxide is generally magnetron sputtering, which will cause sputtering energy damage to the bottom cell. Moreover, the transparent conductive oxide itself has a parasitic absorption problem, and it is difficult to simultaneously satisfy the electrical performance and the optical performance. For example, if the electrical performance of the transparent conductive oxide is to be good, the thickness of the transparent conductive oxide needs to be increased to improve the electrical performance, but the increase of the thickness of the transparent conductive oxide film will lead to a decrease in the optical performance and an increase in the parasitic absorption of the cell. If the optical performance is to be improved, the thickness of the transparent conductive oxide needs to be reduced, which will not only lead to a decrease in the electrical performance, but also cause the risk of electric leakage due to poor wrapping of the transparent conductive oxide on the textured surface of the bottom cell.
[0029] An embodiment of the application provides a perovskite crystalline silicon tandem cell structure, which comprises a top cell, a bottom cell, and a tunneling layer connecting the top cell and the bottom cell.
[0030] The top cell is a perovskite cell.
[0031] The material of the tunneling layer comprises single-walled carbon nanotubes.
[0032] The bottom cell is a crystalline silicon cell.
[0033] The single-walled carbon nanotube has excellent transparency and conductivity, which is conducive to improving the photoelectric conversion efficiency of the perovskite crystalline silicon tandem battery structure; the single-walled carbon nanotube also has good chemical stability and thermal stability, which is helpful to improve the stability and service life of the perovskite crystalline silicon tandem battery structure; the high strength and flexibility of the single-walled carbon nanotube can also improve the mechanical durability of the perovskite crystalline silicon tandem battery structure, so that it can withstand bending and folding in daily use. The perovskite crystalline silicon tandem battery structure provided by the present application realizes the connection of the top cell and the crystalline silicon cell through the single-walled carbon nanotube, so that the perovskite crystalline silicon tandem battery structure has both electrical and optical properties, thereby improving the photoelectric conversion efficiency.
[0034] As a tunneling layer, the single-walled carbon nanotube can reduce optical absorption and ensure that the perovskite crystalline silicon tandem battery structure has the best optical absorption; moreover, unlike high sheet resistance indium tin oxide, the single-walled carbon nanotube has a sheet resistance of 80-200Ω as a material for the tunneling layer, and the thickness can be as low as 5-15nm, and the optical transmittance can be maintained at more than 90%; furthermore, compared with traditional TCO, the single-walled carbon nanotube has excellent electrical, mechanical and mechanical properties, which can effectively reduce the breakage rate in the production process of the battery end and the component end; in addition, the price of the single-walled carbon nanotube is cheaper than that of general TCO, which can reduce the production cost of the perovskite crystalline silicon tandem battery and improve the yield.
[0035] In some embodiments, the preparation method of the tunneling layer includes but is not limited to any one of chemical vapor deposition (CVD), laser evaporation, laser sputtering, flame synthesis, catalytic cracking, arc discharge or electrochemical synthesis, preferably chemical vapor deposition.
[0036] Using CVD to prepare the tunneling layer can avoid damage caused by magnetron sputtering to prepare the tunneling layer.
[0037] Therefore, in the present application, the single-walled carbon nanotube is used as the material of the tunneling layer, so that the perovskite crystalline silicon tandem battery structure has both electrical and optical properties, thereby improving its photoelectric conversion efficiency and making the perovskite crystalline silicon tandem battery structure more competitive and sustainable.
[0038] For example, when the material of the tunneling layer is a single-walled carbon nanotube, the preparation method of the tunneling layer includes: using hydrogen-argon mixed gas as a catalytic gas, using carbon-containing material as a carbon source, using Fe(CO) 5 and elemental sulfur as a catalyst, injecting a mixed solution of the carbon source, ferrocene, elemental sulfur and water into a device for CVD at a catalytic temperature of 400-800℃, and growing the tunneling layer.
[0039] In some embodiments, the carbon source includes dimethylbenzene.
[0040] In certain embodiments, the amount of carbon source used per unit of time during the growth of the tunneling layer is 150-200 mL, for example, it can be 150 mL, 160 mL, 180 mL, 190 mL or 200 mL, but is not limited to the listed values, and the remaining values in the range are also applicable.
[0041] The amount of ferrocene used per unit of time during the growth of the tunneling layer is 30-40 g, for example, it can be 30 g, 32 g, 35 g, 38 g or 40 g, but is not limited to the listed values, and the remaining values in the range are also applicable.
[0042] The amount of elemental sulfur used per unit of time during the growth of the tunneling layer is 1-1.5 g, for example, it can be 1 g, 1.2 g, 1.3 g, 1.4 g or 1.5 g, but is not limited to the listed values, and the remaining values in the range are also applicable.
[0043] The perovskite crystalline silicon tandem cell structure provided by the present application can reduce the thickness of the tunneling layer while ensuring electrical performance by specifically selecting the material of the tunneling layer.
[0044] In certain embodiments, the thickness of the tunneling layer is 5-15 nm, for example, it can be 5 nm, 8 nm, 10 nm, 12 nm or 15 nm, but is not limited to the listed values, and the remaining values in the range are also applicable, preferably 5-8 nm.
[0045] In certain embodiments, the bottom cell includes a HJT cell (Hereto-junction with Intrinsic Thin-layer), a TOP-Con cell (Tunnel Oxide Passivated Contact) or a PERC cell (Passivated Emitter and Rear Cell), preferably a HJT cell.
[0046] For example, the structure of the HJT cell includes a transparent conductive layer, a P-type hydrogenated amorphous silicon layer, a first intrinsic hydrogenated amorphous silicon layer, a monocrystalline silicon layer, a second intrinsic hydrogenated amorphous silicon layer and an N-type hydrogenated amorphous silicon layer arranged in layers.
[0047] Alternatively, the structure of the HJT cell includes a transparent conductive layer, an N-type hydrogenated amorphous silicon layer, a first intrinsic hydrogenated amorphous silicon layer, a monocrystalline silicon layer, a second intrinsic hydrogenated amorphous silicon layer and a P-type hydrogenated amorphous silicon layer arranged in layers.
[0048] In some embodiments, the band gap of the bottom cell is 0.9-1.2 eV, for example, it can be 0.9 eV, 1 eV, 1.1 eV or 1.2 eV, but is not limited to the listed values, and the remaining unlisted values within the value range are also applicable.
[0049] In some embodiments, the band gap of the top cell is 1.6-1.8 eV, for example, it can be 1.6 eV, 1.63 eV, 1.7 eV, 1.72 eV or 1.8 eV, but is not limited to the listed values, and the remaining unlisted values within the value range are also applicable, preferably 1.63-1.72 eV.
[0050] In some embodiments, the perovskite crystalline silicon tandem cell structure comprises a bottom electrode layer, a bottom cell, a tunneling layer, a top cell, a light-transmitting layer and a gate electrode arranged in layers.
[0051] In some embodiments, the hole transport layer or the electron transport layer in the perovskite cell is connected to the tunneling layer.
[0052] In some embodiments, the material of the hole transport layer comprises a carbazole phosphonic acid self-assembled material.
[0053] In some embodiments, the carbazole phosphonic acid self-assembled material comprises any one of Me-4PACz (4-(3,6-dimethyl-9H-carbazol-9-yl) butylphosphonic acid), MeO-2PACz ((2-(3,6-dimethoxy-9H-carbazol-9-yl) ethyl) phosphonic acid), 2PACz (2-(9H-carbazol-9-yl) ethyl phosphonic acid) or 4PACz (4-(3,6-dimethyl-9H-carbazol-9-yl) butylphosphonic acid).
[0054] As a preferred technical solution of the perovskite crystalline silicon tandem cell structure provided by the present application, the perovskite crystalline silicon tandem cell structure comprises a bottom electrode layer, a bottom cell, a tunneling layer, a top cell, a light-transmitting layer and a gate electrode arranged in layers.
[0055] The bottom cell is an HJT cell, and the band gap is 0.9-1.2 eV.
[0056] The material of the tunneling layer is a single-walled carbon nanotube, and the thickness is 5-15 nm.
[0057] The top cell is a perovskite cell, and the band gap is 1.6-1.8 eV.
[0058] The hole transport layer in the perovskite cell is connected to the tunneling layer, and the material of the hole transport layer is Me-4PACz.
[0059] Illustratively, the preparation method of the perovskite crystalline silicon tandem cell structure comprises the following steps:
[0060] (1) A metal layer is arranged on the bottom of the bottom cell to obtain a bottom electrode layer;
[0061] (2) Then a tunneling layer is arranged on the surface of the N-type hydrogenated amorphous silicon layer of the bottom cell by CVD method: using hydrogen and argon mixed gas as catalytic gas, using xylene as carbon source, using Fe(CO)5 and elemental sulfur as catalyst, injecting the mixed solution of xylene, ferrocene, elemental sulfur and water into the device for CVD at a catalytic temperature of 400-800℃, and growing the tunneling layer;
[0062] When growing the tunneling layer, the dosage ratio of xylene, ferrocene and elemental sulfur is (150-200 mL):(30-40 g):(1-1.5 g);
[0063] (3) Me-4PACz is added into a solvent for ultrasonic dispersion to obtain a precursor solution; the precursor solution is coated on the surface of the tunneling layer, and heating annealing treatment is performed to obtain a hole transport layer;
[0064] (4) CsBr is evaporated on the surface of the hole transport layer at a rate of 0.5 A / S, and PbI2 is evaporated at a rate of 5 A / S to obtain an inorganic salt layer with a thickness of 300-600 nm; FAI (methyl ether hydroiodic acid salt), FABr (bromomethyl imidazole salt) and MACl (methyl ammonium chloride) are prepared into a spin coating solution with a concentration of 0.8-1.2 mol / L at a molar ratio of 4:2:1, and the solvent is isopropanol; spin coating is performed, and then annealing is performed at 95-105℃ for 8-12 min to obtain a perovskite layer;
[0065] (5) A C60 layer with a thickness of 5-35 nm is evaporated on the surface of the perovskite layer by evaporation method;
[0066] (6) A SnO2 layer with a thickness of 10-30 nm is deposited by atomic layer deposition (ALD) method;
[0067] (7) An IZO (indium zinc oxide) light transmission layer with a thickness of 40-150 nm is magnetron sputtered; then a gate electrode is obtained by evaporation mask method; and then a MgF anti-reflection layer with a thickness of 70-200 nm is evaporated by evaporation method.
[0068] In some embodiments, the solvent in step (3) includes any one or a combination of at least two of ethanol, isopropanol, methanol or DMF (N,N-dimethylformamide), and typical but non-limiting combinations include a combination of ethanol and isopropanol, a combination of isopropanol and methanol, a combination of methanol and DMF, or a combination of ethanol, isopropanol, methanol and DMF.
[0069] In some embodiments, the heating annealing temperature in step (3) is 95-105°C, for example, it can be 95°C, 98°C, 100°C, 102°C or 105°C, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0070] In some embodiments, the heating and annealing time in step (3) is 8-12 min, for example, it can be 8 min, 9 min, 10 min, 11 min or 12 min, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0071] Example 1
[0072] This embodiment provides a method such as Figure 1 The perovskite-silicon tandem solar cell structure shown includes a bottom electrode layer 1, a bottom cell, a tunneling layer 8, a top cell, a light-transmitting layer 13, and a gate electrode 14 stacked together.
[0073] The bottom electrode layer is made of Ag.
[0074] The bottom battery is an HJT commercial M6 battery with a battery efficiency of 24%. It includes a transparent conductive layer 2, a P-type hydrogenated amorphous silicon layer 3, a first intrinsic hydrogenated amorphous silicon layer 4, a monocrystalline silicon layer 5, a second intrinsic hydrogenated amorphous silicon layer 6, and an N-type hydrogenated amorphous silicon layer 7 stacked together, with a band gap of 1eV.
[0075] The tunneling layer 8 is made of single-walled carbon nanotubes with a thickness of 5 nm.
[0076] The top cell is a perovskite cell with a band gap of 1.7 eV;
[0077] The hole transport layer 9 in the perovskite solar cell is connected to the tunneling layer 8; the N-type hydrogenated amorphous silicon layer 7 in the HJT solar cell is connected to the tunneling layer 8.
[0078] The fabrication method of the perovskite-silicon tandem solar cell structure provided in this embodiment includes the following steps:
[0079] (1) The bottom cell is an HJT commercial M6 cell with a thickness of 200μm. The N-side is polished and the bottom surface is textured. The thickness of the bottom transparent conductive layer 2 is 100nm. The bottom transparent conductive layer 2 is vapor-deposited to obtain a bottom electrode layer 1 with a thickness of 1μm. Then it is cut into 25×25mm silicon wafers.
[0080] (2) Then, a tunneling layer 8 is provided on the surface of the N-type hydrogenated amorphous silicon layer 7 of the bottom cell by CVD method: using hydrogen and argon mixed gas as catalytic gas, using xylene as carbon source, using Fe(CO)5 and elemental sulfur as catalyst, injecting the mixed solution of xylene, ferrocene, elemental sulfur and water into the device for CVD at a catalytic temperature of 600 DEG C, and growing the tunneling layer 8;
[0081] In the growing of the tunneling layer 8, the dosage ratio of xylene, ferrocene and elemental sulfur is 180 mL: 35 g: 1.3 g;
[0082] (3) Me-4PACz is added into ethanol for ultrasonic dispersion to obtain a precursor solution; the precursor solution is coated on the surface of the tunneling layer, and heated annealing treatment is carried out at 100 DEG C for 10 min to obtain a hole transport layer 9;
[0083] (4) CsBr is evaporated on the surface of the hole transport layer 9 at a rate of 0.5 A / S, and PbI2 is evaporated at a rate of 5 A / S to obtain an inorganic salt layer with a thickness of 450 nm; FAI (methanol hydroiodide), FABr (bromomethyl imine salt) and MACl (methyl ammonium chloride) are prepared into a spin coating solution with a concentration of 1 mol / L at a molar ratio of 4:2:1, and the solvent is isopropanol; spin coating is carried out at 3000 rpm for 30 s under nitrogen atmosphere, and then annealing treatment is carried out at 100 DEG C for 10 min to obtain a perovskite layer 10;
[0084] (5) A C60 layer 11 with a thickness of 20 nm is evaporated on the surface of the perovskite layer by evaporation method;
[0085] (6) A SnO2 layer 12 with a thickness of 20 nm is deposited by atomic layer deposition (ALD) method;
[0086] (7) IZO (indium zinc oxide) light transmission layer 13 with a thickness of 100 nm is prepared by magnetron sputtering; then, Au gate electrode 14 with a thickness of 500 nm is obtained by evaporation mask method; and then, MgF anti-reflection layer 15 with a thickness of 100 nm is evaporated by evaporation method.
[0087] Example 2
[0088] The perovskite crystalline silicon tandem cell structure provided in the example is the same as that in Example 1, except that the thickness of the tunneling layer is 8 nm.
[0089] Example 3
[0090] The perovskite crystalline silicon tandem cell structure provided in the example is the same as that in Example 1, except that the thickness of the tunneling layer is 12 nm.
[0091] Example 4
[0092] The embodiment provides a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the thickness of the tunneling layer is 15 nm.
[0093] Embodiment 5
[0094] The embodiment provides a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the thickness of the tunneling layer is 3 nm.
[0095] Embodiment 6
[0096] The embodiment provides a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the material of the hole transport layer is MeO-2PACz.
[0097] Embodiment 7
[0098] The embodiment provides a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the material of the hole transport layer is 2PACz.
[0099] Embodiment 8
[0100] The embodiment provides a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the material of the hole transport layer is 4PACz.
[0101] Comparative example 1
[0102] The comparative example provides a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the tunneling layer is replaced by a 5-nm ITO layer.
[0103] The comparative example provides a preparation method of a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the preparation condition of the tunneling layer is changed.
[0104] In the comparative example, the method for preparing the ITO layer comprises the following steps:
[0105] An ITO layer is arranged on the surface of the N-type hydrogenated amorphous silicon layer of the bottom cell by using a PVD method: hydrogen-argon mixed gas is used as a catalytic gas (the volume ratio of argon to oxygen is 100:3), under the condition that the absolute pressure is 0.3 Pa, an In2O3 target and a SnO2 target are used to deposit the ITO layer, so that the molar ratio of In2O3 to SnO2 in the ITO layer is 90:10.
[0106] Comparative example 2
[0107] The comparative example provides a perovskite crystalline silicon laminated battery structure, which is the same as that in the embodiment 1 except that the material of the tunneling layer is a multi-walled carbon nanotube with a thickness of 5 nm.
[0108] In the present comparative example, the method for preparing the tunneling layer comprises the following steps:
[0109] A tunneling layer was formed on the surface of the N-type hydrogenated amorphous silicon layer of the bottom cell by CVD, using a hydrogen-argon mixture as the catalytic gas, ethylene as the carbon source, Fe(CO)5 and elemental sulfur as the catalyst, injecting a mixture of ethylene, ferrocene, elemental sulfur and water into the CVD device at a catalytic temperature of 750 DEG C, and growing the tunneling layer;
[0110] When growing the tunneling layer, the ratio of the amounts of ethylene, ferrocene and elemental sulfur was 180 mL: 35 g: 1.3 g.
[0111] Performance characterization
[0112] The performance of the perovskite crystalline silicon tandem cell structure obtained in the above examples and comparative examples was characterized, and the sheet resistance and transmittance of the tunneling layer were tested; wherein the performance test of the perovskite crystalline silicon tandem cell structure included the open-circuit voltage (Voc), the fill factor (FF), the conversion efficiency (PCE) and the short-circuit current (Jsc), and the results are shown in Table 1; the results of the sheet resistance and the transmittance are shown in Table 2. Wherein, the test was carried out under the conditions of atmospheric factor AM1.5G, 1sun.
[0113] Table 1
[0114] VOC (V) FF (%) PCE (%) Jsc(mA / cm 2 )]]> Example 1 1.86 80.31 30.64 20.51 Example 2 1.86 80.31 30.34 20.31 Example 3 1.84 79.31 28.70 19.67 Example 4 1.81 78.34 27.14 19.14 Example 5 1.79 77.27 26.21 18.96 Example 6 1.85 80.25 30.51 20.55 Example 7 1.85 80.3 30.37 20.45 Example 8 1.86 80.35 30.61 20.48 Comparative Example 1 1.85 78.84 29.41 20.17 Comparative Example 2 1.78 74.55 25.37 19.12
[0115] Table 2
[0116]
[0117]
[0118] In summary, the perovskite crystalline silicon tandem cell structure provided by the present application connects the top cell and the crystalline silicon cell through single-walled carbon nanotubes, so that the perovskite crystalline silicon tandem cell structure has both electrical and optical properties, thereby improving the photoelectric conversion efficiency.
[0119] The above merely provides a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and those skilled in the art should understand that any changes or replacements within the technical scope disclosed by the present application can be easily conceived by those skilled in the art, and all such changes or replacements fall within the protection scope and disclosure scope of the present application.
Claims
1. A perovskite-silicon tandem solar cell structure, characterized in that, The perovskite-silicon tandem solar cell structure includes a top cell, a bottom cell, and a tunneling layer connecting the top cell and the bottom cell. The top cell is a perovskite cell; The tunneling layer is made of single-walled carbon nanotubes; The bottom battery is a crystalline silicon battery.
2. The perovskite-silicon tandem solar cell structure according to claim 1, characterized in that, The thickness of the tunneling layer is 5-15 nm.
3. The perovskite-silicon tandem solar cell structure according to claim 1, characterized in that, The base battery includes HJT batteries, TOP-Con batteries, or PERC batteries.
4. The perovskite-silicon tandem solar cell structure according to claim 1, characterized in that, The bottom battery is an HJT battery.
5. The perovskite-silicon tandem solar cell structure according to claim 1 or 4, characterized in that, The band gap of the bottom cell is 0.9-1.2 eV.
6. The perovskite-silicon tandem solar cell structure according to claim 1, characterized in that, The band gap of the top cell is 1.6-1.8 eV.
7. The perovskite-silicon tandem solar cell structure according to claim 1, characterized in that, The perovskite-silicon tandem solar cell structure includes a bottom electrode layer, a bottom cell, a tunneling layer, a top cell, a light-transmitting layer, and a grid electrode stacked together.
8. The perovskite-silicon tandem solar cell structure according to claim 7, characterized in that, The hole transport layer or electron transport layer in the perovskite solar cell is connected to the tunneling layer.
9. The perovskite-silicon tandem solar cell structure according to claim 7, characterized in that, The hole transport layer is made of carbazole phosphate-based self-assembling materials.
10. The perovskite-silicon tandem solar cell structure according to claim 1, characterized in that, The perovskite-silicon tandem solar cell structure includes a bottom electrode layer, a bottom cell, a tunneling layer, a top cell, a light-transmitting layer, and a grid electrode stacked together. The bottom cell is an HJT cell with a band gap of 0.9-1.2 eV; The tunneling layer is made of single-walled carbon nanotubes with a thickness of 5-15 nm. The top cell is a perovskite cell with a band gap of 1.6-1.8 eV; The hole transport layer and tunneling layer in the perovskite solar cell are connected, and the hole transport layer is made of Me-4PACz.