Substrate processing apparatus and control method

Abstract

The invention relates to a substrate processing apparatus and a control method. The substrate processing apparatus includes: a plurality of branch pipes which are branched by a merging pipe (20b) downstream of a pump (15) and convey processing liquid to a plurality of types of processing units in a chamber; and a control unit (139) that controls the pump (15). The plurality of branch pipes include: a pre-wetting pipe (PW) in which the flow rate of the processing liquid is maximum; and a tank flushing pipe (PTR) in which the flow rate of the treatment liquid is less than the flow rate of the pre-wetting pipe (PW). A pressure sensor (51) for detecting the pressure of the processing liquid is provided in the pre-wetting piping (PW) among the plurality of branch pipes. The control unit (139) controls the output of the pump (15) such that the pressure sensor (15) detects a predetermined value.

Description

[0001] This application claims priority to Japanese Patent Application No. 2024-165267, filed on September 24, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This invention relates to a substrate processing apparatus and a control method thereof having a chamber for liquid processing of a horizontally oriented substrate. The substrate may be, for example, a semiconductor wafer, a liquid crystal display substrate, an organic EL (Electroluminescence) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, an optical disc substrate, an optical disk substrate, a photomask substrate, or a solar cell substrate. Background Technology

[0003] Patent Document 1 describes an organic solvent supply source for a substrate processing apparatus. The organic solvent supply source includes a pump and is configured to continuously supply organic solvent to a nozzle at a predetermined pressure. The nozzle sprays the organic solvent supplied from the organic solvent supply source toward a horizontally positioned substrate.

[0004] <List of existing technical documents>

[0005] Japanese Patent Application Publication No. 2017-69346

[0006] However, according to the above structure, when the organic solvent supply source is connected to multiple organic solvent supply destinations, there is no technology to fix the pressure in the piping connected to the nozzles that are the organic solvent supply destinations. The pressure of the organic solvent applied to the nozzle varies depending on the usage of the organic solvent at the organic solvent supply destination. That is, in the substrate processing apparatus, when only a single nozzle uses organic solvent, the pressure of the organic solvent applied to the nozzle is high enough to perform proper substrate processing. On the other hand, in the substrate processing apparatus, when a large amount of organic solvent is used simultaneously in multiple nozzles, the pressure of the organic solvent applied to the nozzle decreases, making proper substrate processing impossible. This results in uneven substrate processing when organic solvents are used on the substrate.

[0007] The present invention was made in view of the following circumstances, and its object is to provide a substrate processing apparatus capable of reliably performing substrate processing. Furthermore, one object of the present invention is to provide a control method for the substrate processing apparatus capable of reliably performing substrate processing. Summary of the Invention

[0008] To address the aforementioned issues, the present invention adopts the following structure.

[0009] That is, the substrate processing apparatus of the present invention is characterized by having:

[0010] A chamber that performs liquid treatment on a horizontally oriented substrate;

[0011] The tank, which stores the treatment liquid;

[0012] The main body, which allows the treatment fluid to flow from the tank;

[0013] A pump, which is located in the main pipe, delivers the treatment fluid;

[0014] Multiple branch pipes, which branch off from the main pipe downstream of the pump, deliver treatment fluid to various treatment sections within the chamber; and

[0015] The control unit controls the pump.

[0016] The multiple branch pipes include a first branch pipe with the highest flow rate of the treated liquid and a second branch pipe with a flow rate of the treated liquid that is lower than that of the first branch pipe.

[0017] A pressure gauge for detecting the pressure of the treatment fluid is installed in the first branch pipe of the plurality of branch pipes.

[0018] The control unit controls the pump's output, causing the pressure gauge to detect a specified value.

[0019] [Function / Effect] According to the above structure, a pressure gauge for detecting the pressure of the liquid in the first branch pipe and a control unit for controlling the pump are provided. The flow rate of the liquid in the first branch pipe is high, while the flow rate of the liquid in the second branch pipe is low. The control unit controls the pump output so that the pressure gauge detects a predetermined value. Even if the pressure of the liquid in the first branch pipe decreases due to increased flow of liquid in the second branch pipe, the pump output can be increased to compensate for this decrease. If a large amount of liquid is required in the first branch pipe, a high pressure is always required within the first branch pipe. The above structure satisfies this requirement, and the chamber can perform substrate processing under appropriate conditions. With such a configuration, substrate processing can be reliably performed.

[0020] Furthermore, in the above structure,

[0021] Preferably, the first branch pipe is connected to a nozzle that sprays a treatment liquid onto the upper surface of the substrate inside the cavity.

[0022] [Function / Effect] According to the above structure, the first branch pipe is connected to a nozzle that sprays processing liquid onto the upper surface of the substrate inside the chamber. This structure enables the supply of processing liquid at an appropriate pressure to the nozzle, which requires a large amount of processing liquid within the chamber.

[0023] Furthermore, in the above structure,

[0024] Preferably, the second branch pipe is a back flushing pipe for cleaning the back side of the substrate of the chamber.

[0025] [Function / Effect] According to the above structure, the second branch pipe is a back-rinsing pipe for cleaning the back side of the substrate in the chamber. Therefore, the pressure applied to the nozzle provided in the first branch pipe will not change regardless of whether back-rinsing is performed. With this configuration, substrate processing can be reliably performed.

[0026] Furthermore, in the above structure,

[0027] Preferably, the second branch pipe is a tank flushing pipe for cleaning the nozzles of the chamber.

[0028] [Function / Effect] According to the above structure, the second branch pipe is a tank rinsing pipe for cleaning the nozzles of the chamber. Therefore, the pressure applied to the nozzles provided in the first branch pipe will not change regardless of whether tank rinsing is performed. With this configuration, substrate processing can be reliably performed.

[0029] Furthermore, in the above structure,

[0030] Preferably, the second branch pipe is an edge flushing pipe for cleaning the periphery of the substrate of the chamber.

[0031] [Function / Effect] According to the above structure, the second branch pipe is an edge rinsing pipe for cleaning the periphery of the substrate in the chamber. Therefore, the pressure applied to the nozzle provided in the first branch pipe will not change regardless of whether edge rinsing treatment is performed. With this configuration, substrate processing can be reliably performed.

[0032] In the above structure,

[0033] Preferably, the second branch pipe has a regulator that reduces the pressure of the liquid.

[0034] [Function / Effect] Based on the above structure, the amount of liquid flowing in the second branch can be suppressed, thus suppressing the unnecessary consumption of liquid.

[0035] In addition, the present invention is particularly applicable to substrate processing apparatuses having multiple chambers.

[0036] [Function / Effect] In substrate processing apparatuses with multiple chambers, it is common for liquid to flow through both the first branch pipe and the second branch pipe simultaneously. Specifically, for example, processing using the first branch pipe is performed in the first chamber, while liquid processing with liquid flowing through the second branch pipe is performed in the second chamber. If multiple chambers are present in this way, the pressure in the first branch pipe is prone to decrease. Even with such a substrate processing apparatus structure, substrate processing can be performed without causing a decrease in the pressure of the liquid in the first branch pipe.

[0037] In addition, the present invention is applicable to a substrate processing apparatus in which the first branch is located downstream of the second branch.

[0038] [Function / Effect] In a substrate processing apparatus where the first branch pipe is downstream of the second branch pipe, the pressure in the first branch pipe is particularly prone to decrease due to the flow of liquid in the second branch pipe. According to the present invention, the pressure in the first branch pipe can be reliably stabilized through feedback control, thus preventing such a problem from occurring.

[0039] The following inventions are also disclosed in this specification.

[0040] A control method for a substrate processing apparatus, the substrate processing apparatus comprising: a chamber for performing liquid processing while rotating a horizontally oriented substrate; a tank for retaining liquid; a main pipe for allowing liquid to flow from the tank to the chamber; a pump disposed on the main pipe and dispensing liquid; a first branch pipe and a second branch pipe branching from the main pipe downstream of the pump; and a pressure gauge disposed on the first branch pipe for detecting the pressure of the liquid.

[0041] Its features are,

[0042] The pump is controlled by feedback based on the detected liquid pressure.

[0043] [Function / Effect] Based on the above structure, it achieves the same effect as the substrate processing apparatus of the present invention.

[0044] According to the present invention, a substrate processing apparatus capable of reliably performing substrate processing can be provided. Attached Figure Description

[0045] Figure 1 This is a top view illustrating the overall structure of the substrate processing apparatus of the embodiment.

[0046] Figure 2 This is a piping diagram illustrating the degassing unit and its surrounding structure in an embodiment.

[0047] Figure 3 This is a cross-sectional view illustrating the degassing mode of the degassing device in the embodiment.

[0048] Figure 4 This is a cross-sectional view illustrating the degassing mode of the degassing device in the embodiment.

[0049] Figure 5 This is a cross-sectional view illustrating the structure of the foamer in the embodiment.

[0050] Figure 6 This is a cross-sectional view illustrating the structure of the foamer in the embodiment.

[0051] Figure 7 This is a cross-sectional view illustrating the structure of the foamer in the embodiment.

[0052] Figure 8This is a flowchart illustrating the operation of the degassing unit in the embodiment.

[0053] Figure 9 This is a piping diagram illustrating the operation of the degassing unit in the embodiment.

[0054] Figure 10 This is a piping diagram illustrating the operation of the degassing unit in the embodiment.

[0055] Figure 11 This is a piping diagram illustrating the operation of the degassing unit in the embodiment.

[0056] Figure 12 This is a piping diagram illustrating the operation of the degassing unit in the embodiment.

[0057] Figure 13 This is a piping diagram illustrating the operation of the degassing unit in the embodiment.

[0058] Figure 14 This is a piping diagram illustrating the operation of the degassing unit in the embodiment.

[0059] Figure 15 This is a piping diagram illustrating the effects of the embodiments.

[0060] Figure 16 This is a piping diagram illustrating the effects of the embodiments.

[0061] Figure 17 This is a cross-sectional view illustrating the structure of a degassing apparatus according to a modified embodiment of the present invention.

[0062] Figure 18 This is a piping diagram illustrating the structure of a degassing device according to a modified embodiment of the present invention.

[0063] Figure 19 This is a piping diagram illustrating the structure of a degassing device according to a modified embodiment of the present invention.

[0064] Figure 20 This is a top view illustrating the overall structure of a substrate processing apparatus according to a modified embodiment of the present invention.

[0065] Figure 21 This is a piping diagram illustrating the structure of the degassing unit and its surrounding area in a modified embodiment of the present invention. Detailed Implementation

[0066] The degassing apparatus of the present invention is, for example, mounted on a substrate processing apparatus for processing semiconductor substrates. Therefore, as an embodiment of the present invention, a substrate processing apparatus for substrate processing required before and after exposure processing in a photolithography process will be described as an example.

[0067] Example

[0068] <1. Overall Structure>

[0069] Figure 1 This is a top view showing the overall structure of the substrate processing apparatus in this example. The substrate processing apparatus 1 in this example is connected to an exposure machine 2, which serves as an external device for exposure. The substrate processing apparatus 1 also includes: an indexer block 3, a coating block 5, a developing block 7, and an interface block 9. The indexer block 3, coating block 5, developing block 7, and interface block 9 are arranged sequentially to form the substrate processing apparatus 1. The substrate processing apparatus 1 has a housing 1A that houses all the blocks. The housing 1A is approximately rectangular in shape when viewed from above. A load port 4 protrudes from the wall at one end of the housing 1A.

[0070] In this specification, for convenience, the orientation of the indexing block 3, coating block 5, developing block 7, and interface block 9 in the substrate processing apparatus 1 is referred to as the front-back direction (X direction). This X direction extends horizontally. The direction from the coating block 5 towards the indexing block 3 in the substrate processing apparatus 1 is referred to as the front. The direction opposite to the front is referred to as the rear. The horizontal direction orthogonal to the X direction is referred to as the left-right direction (Y direction). The Y direction is also the orientation in which the multiple loading ports 4 are arranged. For convenience, one side of the Y direction is referred to as the right, and the opposite direction of the right is referred to as the left. The height direction (Z direction) is orthogonal to both the X and Y directions and is consistent with the vertical direction. In the figures, for reference, front, rear, right, left, top, and bottom are appropriately indicated.

[0071] <2. Indexing Block>

[0072] like Figure 1 As shown, the indexing block 3 has a loading port 4, which is the entrance for inserting a carrier C into the block, wherein multiple substrates W are accommodated in the carrier C at predetermined intervals in a horizontal orientation in the Z direction. The loading port 4 can hold the carrier C.

[0073] Multiple (e.g., 25) substrates W are stacked and stored in a carrier C. The carrier C, which contains the unprocessed substrates W, is first placed in the loading port 4 after being brought into the substrate processing apparatus 1.

[0074] An indexing robot IR is configured in indexing block 3, capable of transporting horizontally oriented substrates W one by one. The indexing robot IR can approach and be positioned within... Figure 1 The path 34, which marks the boundary between the indexing block 3 and the coating block 5, and one of the four loading ports 4, facilitates the transfer of the substrate W between the path 34 and the carrier C located at the loading port 4. The robotic arm 36 enables the transfer of the substrate W performed by the indexing robot IR.

[0075] <3. Coating Block>

[0076] The coating block 5 is a structure that forms a photoresist layer primarily on the substrate W before exposure processing. The coating block 5 has: a second column CL2 located at the rear of path 34, a first column CL1 located to the left of the second column CL2, and a third column CL3 located to the right of the second column CL2. Therefore, the second column CL2 is positioned between the first column CL1 and the third column CL3.

[0077] In the first column CL1, chemical treatment chambers are arranged along the X direction. Each chemical treatment chamber has a rotating chuck 8 that supports the substrate W and is rotatable, and a nozzle 10 for spraying the chemical solution. Therefore, the chemical treatment chamber is a structure for coating the chemical solution onto the surface of the substrate W. The chemical treatment chamber includes a bottom anti-reflective coating chamber 45 for forming an anti-reflective film and resist chambers 41, 42, 43, and 44 for forming a photoresist layer. For in... Figure 1 The first column CL1 will be described with either two resist chambers 41, 42, 43, 44 or two bottom anti-reflective coating chambers 45 arranged sequentially. In the first column CL1, the bottom anti-reflective coating chambers 45 and the resist chambers 41, 42, 43, 44 are stacked across three layers. The bottom anti-reflective coating chambers 45 and the resist chambers 41, 42, 43, 44 can be appropriately interchanged in their vertical arrangement. Alternatively, the first column CL1 may have four or more layers of chemical treatment chambers. The resist chambers 41, 42, 43, 44 are structures for liquid treatment of a horizontally positioned substrate W, corresponding to the chambers of the present invention.

[0078] The edge exposure section is located in the third column CL3 (described later) or the sixth column CL6 (described later) of the developing block 7. The edge exposure section is capable of performing edge exposure to remove the photoresist layer at the periphery of the substrate W.

[0079] Furthermore, the first column CL1 has a degassing chamber 6, which has a first degassing device 6a and a second degassing device 6b that supply the degassed solvent to the resist chambers 41, 42, 43, and 44. Figure 2 The structure of the degassing chamber 6 will be described later. The degassing chamber 6 supplies liquid to the resist chambers 41, 42, 43, and 44, which will be described later. In addition, the degassing chamber 6 in this example can also supply liquid to the bottom anti-reflective coating chamber 45.

[0080] The second column CL2 serves as a pathway for the first central robot C1 to move back and forth while transporting the horizontally positioned substrate W. In addition to the aforementioned path 34, the first central robot C1 can also access the bottom anti-reflective coating chamber 45, resist chambers 41, 42, 43, and 44 of the first column CL1, the heat treatment chamber 55 (described later) and cooling section 58 located in the third column CL3, and the section located in… Figure 1 The path 57 is shown as the boundary between the coating block 5 and the developing block 7. The resist chambers 41, 42, 43, and 44 correspond to the chambers of this invention.

[0081] The first central robot C1 can move freely forward and backward in the X direction and rise and fall freely in the Z direction, so as to transport the substrate W to various accessible positions. Furthermore, the first central robot C1 can orient the robotic arm 56 holding the substrate W to any side, front, back, left, or right.

[0082] In the third column CL3, a heat treatment chamber 55 for heating the substrate W and a cooling section 58 for cooling the substrate W are arranged along the X direction. In the heat treatment chamber 55, a circular heating plate 55a for heating the substrate W and a circular post-heating treatment plate 55b for reducing the temperature of the substrate W, which has reached a high temperature, are arranged along the Y direction. On the other hand, a circular cooling treatment plate 58a for cooling the substrate W at room temperature is provided in the cooling section 58. In the third column CL3, the heat treatment chamber 55 and the cooling section 58 are not only arranged along the X direction but also stacked along the Z direction to form a laminate of chambers. The number of layers in the laminate can be appropriately varied.

[0083] <4. Developing Block>

[0084] The developing block 7 is a structure primarily used for developing the exposed substrate W. The developing block 7 has: a fifth column CL5 located at the rear of path 57, a fourth column CL4 located to the left of the fifth column CL5, and a sixth column CL6 located to the right of the fifth column CL5. Therefore, the fifth column CL5 is positioned between the fourth column CL4 and the sixth column CL6.

[0085] In the fourth column CL4, developing chambers 77 are arranged along the X direction. Each developing chamber 77 has a rotating chuck 8 that supports the substrate W for rotation and a nozzle 10 that ejects the chemical solution. Figure 1 The following describes the case where two developing chambers 77 are arranged sequentially in the fourth column CL4. The developing chambers 77 are stacked in the fourth column CL4. The number of layers in the stack formed by the developing chambers 77 can be appropriately varied.

[0086] The fifth column CL5 serves as a pathway for the second central robot C2 to move back and forth while transporting the horizontally positioned substrate W. In addition to the aforementioned path 57, the second central robot C2 can also access the developing chamber 77 of the fourth column CL4, the heat treatment chamber 75 (described later) located in the sixth column CL6, the cooling section 78, and the path 79.

[0087] Like the first central robot C1, the second central robot C2 can move freely forward and backward in the X direction and rise and fall freely in the Z direction, so as to transport the substrate W to various accessible positions. Furthermore, the second central robot C2 can position the robotic arm 76 holding the substrate W at least in any of the following directions: forward, left, or right.

[0088] In the sixth column CL6, a heat treatment chamber 75 for the heating substrate W and a cooling section 78 for the cooling substrate W are arranged along the X direction. The heat treatment chamber 75 has the same structure as the heat treatment chamber 55 in the third column. Therefore, the heat treatment chamber 75 is configured such that a circular heating plate 75a and a circular post-heating treatment plate 75b are arranged along the Y direction. The cooling section 78 has the same structure as the cooling section 58 in the third column CL3. Therefore, a circular cooling plate 78a is provided in the cooling section 78.

[0089] Path 79 is located at the rear end of the sixth column CL6. The horizontally oriented substrate W can travel back and forth between the developing block 7 and the interface block 9 via path 79.

[0090] <5. Interface Block>

[0091] Interface block 9 includes: a path 95 capable of cooling the placed substrate W, a first robot R1 capable of accessing the path 95 and the aforementioned path 79, and a second robot R2 capable of accessing the path 95 and the exposure machine 2. The first robot R1 has a manipulator 961 capable of holding the substrate W placed in a horizontal position on the path 79, and the second robot R2 has a manipulator 962 capable of holding the substrate W placed in a horizontal position on the path 95.

[0092] Path 95 is stacked in the Z direction to form a stacked body.

[0093] <6. Exposure Machine>

[0094] Exposure machine 2 receives the substrate W, which is to be exposed before exposure, from the second robot R2, and performs exposure processing, sintering the circuit pattern of the device onto the photoresist layer of the substrate W. The exposed substrate W is then handed over to the second robot R2. Specific structures of exposure machine 2 may include, for example, a stepper exposure device or a scanner.

[0095] <7. Control Department>

[0096] like Figure 1 As shown, the substrate processing apparatus 1 includes a control unit 139 related to the control of the apparatus. Additionally, although in Figure 1Although not shown in the figure, a corresponding storage unit is provided in the control unit 139. The control unit 139 is, for example, composed of a CPU (Central Processing Unit). The specific structure of the control unit is not limited; for example, each control of the board processing device 1 may be composed of a single processor, or each control may be composed of independent processors.

[0097] As controls related to the control unit 139, there are, for example, controls related to the indexing robot IR, the first central robot C1, the second central robot C2, the first robot R1, and the second robot R2.

[0098] That is, in this example, the control unit 139 is a structure that controls pumps 15 and 25, and controls pump 15 based on the output of sensor 14. Specifically, when it can be determined by sensor 14 that degassing has ended, the control unit 139 stops pump 15, thus ending the degassing mode described above.

[0099] The control unit 139 controls the output of the pump 15 so that the pressure sensor 51 reaches a specified value.

[0100] The control unit 139 in this example has the following function: switching between the first degassing device 6a and the second degassing device 6b for degassing treatment. The function of the control unit 139 as a switching control unit will be described later.

[0101] The storage unit stores programs, parameters, and other data related to control. The storage unit can be a single device or a set of independent devices corresponding to each control function. Furthermore, the substrate processing apparatus 1 in this example does not impose any particular limitation on the structure of the device implementing the storage unit.

[0102] <8. Degassing Chamber>

[0103] Figure 2 The structure of the degassing chamber 6 and the various piping connections between the degassing chamber 6 and the corrosion resist chambers 41, 42, 43, and 44 are described. For example... Figure 2 As shown, the degassing chamber 6 has multiple degassing devices. In this example, the degassing chamber 6 has a first degassing device 6a and a second degassing device 6b. In this example, the first degassing device 6a and the second degassing device 6b are structured to ensure uninterrupted liquid supply during the degassing process by alternately performing solvent degassing.

[0104] As a solvent, the photoresist solution used for substrate treatment in resist chambers 41, 42, 43, and 44 during resist film formation can be used. Examples of solvents specifically include diluents, PGME (Propylene glycol monomethyl ether), PGMEA (Propylene glycol monomethyl ether acetate), ethyl lactate, cyclohexane, MIBC (4-Methyl-2-pentanol), IPA (Isopropyl alcohol), and other organic solvents.

[0105] Reference Figure 2 The specific structure of the first degassing device 6a is described below. For example... Figure 2 As shown, the first degassing device 6a includes: a first tank 11 for storing solvent; a three-way valve 12 for injecting solvent into the first tank 11; a foamer 13 for foaming the solvent flowing from the first tank 11; a sensor 14 disposed downstream of the foamer 13 and for detecting the foaming status of the solvent; a pump 15 disposed downstream of the sensor 14; and a valve 16 disposed downstream of the pump 15. The first tank 11 corresponds to the tank of the present invention and is a structure for storing the liquid to be degassed. The foamer 13 is a structure for generating bubbles from the liquid, and the pump 15 is a structure for allowing the liquid to flow through the foamer 13.

[0106] Three through holes are provided in the first tank 11. That is, an inlet 105 and an outlet 106 are provided on the bottom surface of the first tank 11, and an exhaust port 107 is provided on the cover of the first tank 11.

[0107] <9. First degassing unit: piping and three-way valve>

[0108] The piping and three-way valve 12 associated with the first degassing unit 6a will be described. The inlet 105 of the first tank 11 is located downstream of the three-way valve 12, and the inlet 105 and the three-way valve 12 are interconnected via inlet piping 19a.

[0109] Three-way valve 12 is connected to solvent supply source 50 via upstream piping 20c. Additionally, three-way valve 12 is connected to pump 15 via return piping 19c. Therefore, three-way valve 12 can connect solvent supply source 50 to inlet 105, and also connect pump 15 to inlet 105. Three-way valve 12 can selectively connect either solvent supply source 50 to inlet 105 or pump 15 to inlet 105. For example, Figure 2The three-way valve 12 is in a closed state, preventing the flow path from the solvent supply source 50 to the inlet 105. The case where solvent flows from the solvent supply source 50 to the inlet 105 will be described later. Additionally, the three-way valve 12 may sometimes be in a blocked state, where neither the solvent supply source 50 nor the pump 15 is connected to the inlet 105. The blocked state of the three-way valve 12 will also be described later.

[0110] The return piping 19c has the following structure: it connects the first tank 11 to the foamer 13, allowing the liquid to circulate between the first tank 11 and the foamer 13.

[0111] The outlet 106 of the first tank 11 is located upstream of the foamer 13. The outlet 106, the foamer 13, the sensor 14, the pump 15, and the valve 16 are arranged sequentially from upstream to downstream and are connected in series via the outflow pipe 19b. Therefore, the solvent flowing out of the outlet 106 of the first tank 11 passes through the foamer 13, the sensor 14, and the pump 15 to reach the valve 16.

[0112] Return pipe 19c is a branch pipe from the outflow pipe 19b between pump 15 and valve 16. Return pipe 19c connects to three-way valve 12 from the branch point 19d of the outflow pipe 19b.

[0113] like Figure 3 As shown, when the three-way valve 12 in this example is switched to the return piping 19c side and the valve 16 is in the closed state, the first degassing device 6a enters the degassing mode. The degassing mode is a mode in which the gas dissolved in the solvent stored in the first tank 11 is foamed by the foamer 13 to remove it from the solvent, and it is a mode in which the solvent is circulated between the first tank 11 and the foamer 13 via the return piping 19c.

[0114] like Figure 4 As shown, when the three-way valve 12 is in the closed state and the valve 16 is in the open state, the first degassing device 6a enters the liquid supply mode. The liquid supply mode is the mode in which the solvent stored in the first tank 11 is supplied to the resist chambers 41, 42, 43, and 44. The closed state of the three-way valve 12 means that the three-way valve 12 does not allow the solvent to flow.

[0115] The first tank 11 has a vent 107. This vent 107 is connected to a drain pipe 18 via a valve 17. The purpose of providing the vent 107 is to allow the gas stored in the upper part of the first tank 11 to be released from the first tank 11. In the following description in this example, the valve 17 is appropriately opened to release gas from the first tank 11.

[0116] <10. First degassing device: foamer>

[0117] Figure 5The structure of the foamer 13 in this example will be described. The foamer 13 in this example is a tubular structure located between the upstream outlet pipe 19b and the downstream outlet pipe 19b. Specifically, the foamer 13 has a cylindrical base 131. An inlet for introducing solvent and an outlet for discharging solvent are provided on the base 131. The inlet of the base 131 is connected to the upstream outlet pipe 19b via a connector 101. The outlet of the base 131 is connected to the downstream outlet pipe 19b via a connector 102.

[0118] The inner diameter of the base 131 varies depending on its location. Specifically, the inlet and outlet of the base 131 have larger inner diameters, while the central CT portion sandwiched between the inlet and outlet has a smaller inner diameter. A first transfer section CH1 with a gradually narrowing inner diameter is provided between the inlet and the central CT portion. A second transfer section CH2 with a gradually widening inner diameter is provided between the central CT portion and the outlet.

[0119] The central section CT is a narrower flow path for the liquid than the second transfer section CH2, and it is the structure that introduces the liquid into the second transfer section CH2. The first transfer section CH1 is the structure that introduces the liquid, which is the target for degassing, into the central section CT.

[0120] The needle 133 is a structure that can move freely within the internal space of the base 131, which is CT-positioned at the center of the base 131. When the elongation of the needle 133 changes, the resistance to solvent flow in the base 131 can be adjusted.

[0121] For example, when the needle 133 is completely withdrawn from the interior space of the base 131, the bubbler 13 is in a fully open state. And, for example, when the needle 133 is completely protruding into the interior space of the base 131, the bubbler 13 is in a fully closed state.

[0122] Motor 132 drives needle 133. Foamer control unit 134 controls motor 132 to realize the opening and closing of foamer 13.

[0123] Needle 133 is a structure that adjusts the cross-sectional area of ​​the flow path formed by the central CT.

[0124] When the foamer 13 is fully open, the resistance to solvent flow through the base 131 is minimal, and the solvent easily flows to the base 131. When the foamer 13 is fully closed, the resistance to solvent flow through the base 131 is maximum, making it difficult for the solvent to flow to the base 131, or the flow may stop. When the foamer 13 is fully closed, solvent flow may or may not be permitted.

[0125] Figure 6This describes the solvent foaming process when the foamer 13 is nearly fully open. If the solvent is passed through the foamer 13 in this state, the pressure applied to the solvent at the central portion CT of the base 131 increases. This pressure returns to normal when the solvent leaves the central portion CT. By causing this pressure change, the gas dissolved in the solvent becomes insoluble and forms bubbles B. Thus, the foamer 13 foams the solvent.

[0126] Figure 7 This describes the solvent foaming process when the foamer 13 is nearly fully closed. If the solvent is passed through the foamer 13 in this state, the pressure applied to the solvent at the center CT of the base 131 is higher than... Figure 6 The situation is even more pronounced. The pressure drops sharply as the solvent leaves the central section CT. By causing such a pressure change, the gas dissolved in the solvent becomes insoluble, generating a large number of bubbles B. Thus, by opening and closing the foamer 13, the amount of bubbles generated relative to the solvent can be adjusted.

[0127] <11. First degassing device: sensor>

[0128] Sensor 14 is located downstream of foamer 13 and measures the amount of bubbles contained in the flowing solvent. Sensor 14 has a structure comprising a emitter that emits a laser beam and a receiver that detects the laser beam. The emitter and receiver are arranged to sandwich the path of the solvent. If the flowing solvent contains a large number of bubbles, the laser beam is correspondingly disturbed by the bubbles. If the flowing solvent does not contain bubbles, such disturbance does not occur. Thus, sensor 14 can measure the amount of bubbles contained in the flowing solvent based on the output of the receiver. Sensor 14 is not limited to a photosensitive sensor; for example, it can also be constructed as an ultrasonic sensor. Thus, sensor 14 is a structure used to detect the degassing status of a liquid during a degassing process.

[0129] <12. First degassing device: pump>

[0130] Pump 15, located downstream of sensor 14, is the structure that forms the solvent flow. When pump 15 is operating, the solvent stored in the first tank 11 reaches the branch point 19d through outlet 106, foamer 13, and sensor 14. Thus, pump 15 is positioned at the outlet pipe 19b to deliver the processed liquid.

[0131] A specific example of pump 15 is a liquid delivery pump. A liquid delivery pump is a pump that, when a pressure setpoint is given by the control unit, can maintain a constant liquid pressure while adjusting the motor speed. If such a liquid delivery pump is used, even in a structure with multiple nozzles 10 downstream, the amount of liquid ejected from each nozzle 10 can be kept constant. The pump 15 in this example is not limited to the liquid delivery pump described above; other pumps can also be used.

[0132] <13. Second Degassing Device>

[0133] like Figure 2 As shown, the degassing chamber 6 in this example has two degassing devices. That is, the degassing chamber 6 has the first degassing device 6a described above and a second degassing device 6b with the same structure as the first degassing device 6a. The second degassing device 6b, like the first degassing device 6a, can operate in both degassing mode and liquid supply mode.

[0134] That is, the second degassing device 6b, like the first degassing device 6a, includes: a second tank 21, a three-way valve 22, a foamer 23, a sensor 24, a pump 25, and a valve 26. The second tank 21 has three through holes: an inlet 205, an outlet 206, and an exhaust port 207, just like the first degassing device 6a. Furthermore, the structure where the inlet pipe 29a connects the inlet 205 to the three-way valve 22, and the structure where the three-way valve 22 connects the solvent supply source 50 to the inlet 205 and also connects the pump 25 to the inlet 105 via the return pipe 29c, are also the same as the first degassing device 6a. In addition, the foamer 23, sensor 24, pump 25, and valve 26 are arranged in series via the outlet pipe 29b, and the return pipe 29c connects the branch point 29d to the three-way valve 22, are also the same as the first degassing device 6a. Also, like the first degassing device 6a, the second tank 21 has an exhaust port 207. The vent 207 is connected to the drain pipe 28 via valve 27.

[0135] In this example, the degassing chamber 6 is configured such that the first degassing device 6a and the second degassing device 6b are arranged side by side. Specifically, the upstream pipe 20c connected to the solvent supply source 50 branches at branch point 19e into a branch pipe leading to the first degassing device 6a and a branch pipe leading to the second degassing device 6b. Furthermore, the outflow pipe 19b extending from the first degassing device 6a and the outflow pipe 29b extending from the second degassing device 6b are connected to the confluence pipe 20b at confluence point 20a. In other words, the solvent in the solvent supply source 50 is degassed in either the first degassing device 6a or the second degassing device 6b before reaching the confluence pipe 20b. The outflow pipe 19b and the confluence pipe 20b are structures that allow the solvent to flow from the first tank 11, corresponding to the main pipe of this invention.

[0136] <14. Night supply to the resist chamber>

[0137] Next, refer to Figure 2 The piping used when the degassed solvent flowing in the confluence pipe 20b is supplied to the resist chambers 41, 42, 43, and 44 will be described. These pipes are the piping that constitutes the coating block 5. That is, the solvent arriving at the confluence pipe 20b is distributed to the four resist chambers 41, 42, 43, and 44 through various pipes.

[0138] The combined pipe 20b is connected to regulators 52, 53, 54, and pressure sensor 51. Valve 61, etc., is a structure located midway through the pipe that controls whether solvent flows downstream. Regulator 52, etc., is a structure located midway through the pipe that controls the downstream solvent pressure. Regulator 52, etc., can set the downstream solvent pressure within a range from 0 to a specified pressure. The specified pressure refers to the pressure upstream of regulator 52, etc. That is, regulator 52, etc., cannot set the secondary solvent pressure higher than the primary solvent pressure.

[0139] The merging pipe 20b has a first branch point TP1, a second branch point TP2, and a third branch point TP3 from which various branch pipes branch off. At the first branch point TP1, a pot rinse pipe (PTR) branching off from the merging pipe 20b toward the regulator 52 branches off. The regulator 52 is located midway along the pot rinse pipe PTR. Additionally, downstream of the first branch point TP1, a second branch point TP2 is located on the merging pipe 20b. At the second branch point TP2, a back rinse pipe (BR) and a cup rinse pipe (CR) branching off from the merging pipe 20b toward the regulator 53 branches off. The regulator 53 is located midway along the back rinse pipe BR and the cup rinse pipe CR. Similarly, downstream of the second branch point TP2, a third branch point TP3 is located on the merging pipe 20b. At the third branch point TP3, an edge rinse pipe (EBR) branching off from the merging pipe 20b toward the regulator 54 branches off. The regulator 54 is located midway through the edge flush piping EBR.

[0140] The tank flushing piping PTR, back flushing piping BR, cup flushing piping CR, and edge flushing piping EBR are equivalent to the second branch pipe of this invention.

[0141] At the third branch point TP3, a pre-wetting pipe PW branches off from the confluence pipe 20b. The pre-wetting pipe PW corresponds to the first branch pipe of this invention. Thus, the substrate processing apparatus 1 of this example has multiple branch pipes that branch off from the confluence pipe 20b downstream of the pump 15 and supply solvent to various processing sections within the resist chamber 41. Specifically, the branch pipes are the first branch pipe and the second branch pipe. That is, in this example, the branch pipes include the pre-wetting pipe PW, which has the highest solvent flow rate, and the tank rinsing pipe PTR, which has a lower solvent flow rate than the pre-wetting pipe PW.

[0142] The pre-wetted piping PW, serving as the first branch pipe, is connected to the nozzle 10 that sprays solvent onto the upper surface of the substrate W within the resist chambers 41, 42, 43, and 44. The pre-wetted piping PW, serving as the first branch pipe, is located downstream of the aforementioned second branch pipes: the tank flushing piping PTR, the back flushing piping BR, the cup flushing piping CR, and the edge flushing piping EBR.

[0143] The PTR branch, serving as the second branch, consists of four branch pipes: PTR1, PTR2, PTR3, and PTR4. These are assigned to the respective resist chambers 41, 42, 43, and 44. Similarly, the BR branch, also serving as the second branch, consists of four branch pipes: BR1, BR2, BR3, and BR4. These are assigned to the respective resist chambers 41, 42, 43, and 44. Likewise, the CR branch, also serving as the second branch, consists of four branch pipes: CR1, CR2, CR3, and CR4. These are assigned to the respective resist chambers 41, 42, 43, and 44. Finally, the EBR branch, also serving as the second branch, consists of four branch pipes: EBR1, EBR2, EBR3, and EBR4. These are assigned to the respective resist chambers 41, 42, 43, and 44. Similarly, the pre-wetting piping PW branch, which serves as the second branch pipe, consists of four pre-wetting branch pipes: PW1, PW2, PW3, and PW4. These are distributed to the respective resist chambers 41, 42, 43, and 44.

[0144] Pressure sensor 51 is a pressure gauge located between the third branch point TP3 and valve 61, and is a structure that measures the pressure applied to the solvent reaching valve 61. In addition, downstream of pressure sensor 51, in addition to valve 61, valves 62, 63, and 64 are connected in parallel.

[0145] The resist chamber 41 has multiple solvent outlets consisting of nozzles or the like. The coating block 5 has valves that control whether liquid is sprayed from the various outlets.

[0146] In the coating block 5, the piping for supplying solvent to the resist chamber 41 includes: tank rinsing branch pipe PTR1, back rinsing branch pipe BR1, cup rinsing branch pipe CR1, edge rinsing branch pipe EBR1, and pre-wetting branch pipe PW1.

[0147] The tank rinsing branch pipe PTR1 is a piping designed to supply solvent to the standby tank used for cleaning the nozzles 10. Tank rinsing refers to the cleaning process of the standby tank for the photoresist nozzles. By supplying solvent to the standby tank, the tip of the nozzle 10, which sprays the photoresist liquid, can be cleaned. In addition, by filling the standby tank with solvent vapor, the drying of the tip of the nozzle 10 can be prevented. The solvent flow rate to the photoresist chamber 41 during tank rinsing is, for example, 95 ml / min to 130 ml / min.

[0148] The back rinse branch pipe BR1 is a piping line intended to supply solvent to the resist chamber 41 during back rinse of cleaning the back side of the substrate W. The cup rinse branch pipe CR1 is a piping line intended to supply solvent to the resist chamber 41 during cleaning of the cup used to prevent the photoresist liquid from splashing onto the outside of the rotary chuck 8. The solvent flow rate to the resist chamber 41 during back rinse is, for example, 100 ml / min to 130 ml / min.

[0149] The edge flushing branch pipe EBR1 is a piping system designed to supply solvent to the resist chamber 41 when removing photoresist solution from the periphery of a substrate W coated with photoresist. The solvent flow rate to the resist chamber 41 during edge flushing is, for example, 15 ml / min to 30 ml / min.

[0150] The pre-wetting branch pipe PW1 is a piping system designed to supply solvent to the resist chamber 41 during pre-wetting, before supplying the photoresist solution to the substrate W. The solvent flow rate to the resist chamber 41 during pre-wetting is, for example, 75 ml / min to 150 ml / min.

[0151] The tank flushing branch pipe PTR1 is connected to regulator 52. Similarly, the back flushing branch pipe BR1 and the cup flushing branch pipe CR1 are connected to regulator 53. In addition, the edge flushing branch pipe EBR1 is connected to regulator 54.

[0152] The pre-humidification branch line PW1 is connected directly to the pressure sensor 51 without a regulator. Pre-humidification requires a relatively large amount of solvent, and preferably, a high pressure is applied to the pre-humidification branch line PW1. In this example, to meet this requirement, there is no regulator upstream of the pre-humidification branch line PW1 to reduce the solvent pressure.

[0153] Valve 91, located midway through the tank rinsing branch pipe PTR1, controls whether solvent flows through it. Valve 81, located midway through the back rinsing branch pipe BR1 and the cup rinsing branch pipe CR1, controls whether solvent flows through these two branches. Valve 71, located midway through the edge rinsing branch pipe EBR1, controls whether solvent flows through it. Valve 61, located midway through the pre-wetting branch pipe PW1, controls whether solvent flows through it.

[0154] The coating block 5 has multiple resist chambers identical to those in the resist chamber 41. The piping supplying solvent to these resist chambers has the same structure as that in the resist chamber 41.

[0155] That is, in the coating block 5, the piping for supplying solvent to the resist chamber 42 includes: tank rinsing branch pipe PTR2, back rinsing branch pipe BR2, cup rinsing branch pipe CR2, edge rinsing branch pipe EBR2, and pre-wetting branch pipe PW2.

[0156] The tank flushing branch pipe PTR2 is connected to regulator 52. Similarly, the back flushing branch pipe BR2 and the cup flushing branch pipe CR2 are connected to regulator 53. Furthermore, the edge flushing branch pipe EBR2 is connected to regulator 54. The pre-wetting branch pipe PW2 is connected directly to pressure sensor 51 without going through the regulator.

[0157] Valve 92, located midway through the tank rinsing branch pipe PTR2, controls whether solvent flows through it. Valve 82, located midway through the back rinsing branch pipe BR2 and the cup rinsing branch pipe CR2, controls whether solvent flows through these two branches. Valve 72, located midway through the edge rinsing branch pipe EBR2, controls whether solvent flows through it. Valve 62, located midway through the pre-wetting branch pipe PW2, controls whether solvent flows through it.

[0158] In addition, the coating block 5 includes the following piping for supplying solvent to the resist chamber 43: tank rinsing branch pipe PTR3, back rinsing branch pipe BR3, cup rinsing branch pipe CR3, edge rinsing branch pipe EBR3, and pre-wetting branch pipe PW3.

[0159] The tank flushing branch pipe PTR3 is connected to regulator 52. Similarly, the back flushing branch pipe BR3 and the cup flushing branch pipe CR3 are connected to regulator 53. Furthermore, the edge flushing branch pipe EBR3 is connected to regulator 54. The pre-wetting branch pipe PW3 is connected directly to pressure sensor 51 without going through the regulator.

[0160] Valve 93, located midway through the tank rinsing branch pipe PTR3, controls whether solvent flows through it. Valve 83, located midway through the back rinsing branch pipe BR3 and the cup rinsing branch pipe CR3, controls whether solvent flows through these two branches. Valve 73, located midway through the edge rinsing branch pipe EBR3, controls whether solvent flows through it. Valve 63, located midway through the pre-wetting branch pipe PW3, controls whether solvent flows through it.

[0161] Similarly, in the coating block 5, the piping for supplying solvent to the resist chamber 44 includes: tank rinsing branch pipe PTR4, back rinsing branch pipe BR4, cup rinsing branch pipe CR4, edge rinsing branch pipe EBR4, and pre-wetting branch pipe PW4.

[0162] The tank flushing branch pipe PTR4 is connected to regulator 52. Similarly, the back flushing branch pipe BR4 and the cup flushing branch pipe CR4 are connected to regulator 53. Furthermore, the edge flushing branch pipe EBR4 is connected to regulator 54. The pre-wetting branch pipe PW4 is connected directly to pressure sensor 51 without going through the regulator.

[0163] Valve 94, located midway through the tank rinsing branch pipe PTR4, controls whether solvent flows through it. Valve 84, located midway through the back rinsing branch pipe BR4 and the cup rinsing branch pipe CR4, controls whether solvent flows through these two branches. Valve 74, located midway through the edge rinsing branch pipe EBR4, controls whether solvent flows through it. Valve 64, located midway through the pre-wetting branch pipe PW4, controls whether solvent flows through it.

[0164] <15. Operation of the degassing device>

[0165] The following is for reference Figure 8 The flowchart below illustrates the operation of the degassing device in this example.

[0166] Step S11: Start injecting solvent from solvent supply source 50 into the first tank 11 in the first degassing device 6a. Figure 9 This indicates the solvent flow in this step. In this step, the three-way valve 12 is switched to the solvent supply source 50 side. Therefore, the solvent from the solvent supply source 50 reaches the first tank 11 through the upstream pipe 20c, the three-way valve 12, the inflow pipe 19a, and the inlet 105. At this time, the pump 15 is not operating, and the valve 16 is closed. Therefore, the solvent in this step does not flow through the outflow pipe 19b and the return pipe 19c. That is, the solvent from the solvent supply source 50 is stored in the first tank 11.

[0167] Furthermore, in this step, the three-way valve 22 of the second degassing device 6b is switched to the return piping 29c side, so the solvent will not flow from the solvent supply source 50 to the second tank 21.

[0168] Step S12: When the storage of solvent in the first tank 11 is completed, the first degassing device 6a enters degassing mode. In degassing mode, firstly, the three-way valve 12 is switched to the return piping 19c side. Then, the pump 15 is activated. Figure 10 This indicates the solvent flow in this step. The solvent from the first tank 11 in this step passes through outlet 106, foamer 13, sensor 14, and pump 15, then from branch point 19d via return pipe 19c to three-way valve 12, and from there via inflow pipe 19a to inlet 105 of the first tank 11. Furthermore, valve 16 is closed at this time.

[0169] The bubbles generated by the foamer 13 are returned to the first tank 11 in a state of being mixed with the solvent via return piping 19c. The bubbles are lighter than the solvent, so they accumulate in the upper part of the first tank 11 to form a gas phase.

[0170] The solvent stored in the first tank 11 was repeatedly along Figure 10 The degassing is carried out continuously along the path shown. That is, the degree of degassing in the first degassing device 6a in this example can be appropriately adjusted by increasing or decreasing the number of times the solvent is degassed. Such adjustment can also be performed in the second degassing device 6b, which has the same structure as the first degassing device 6a. The detection result of the sensor 14 can be used to determine whether degassing is sufficiently completed.

[0171] Step S13: Figure 11 This indicates the solvent flow in this step. When the degassing of the solvent stored in the first tank 11 is completed, the first degassing device 6a enters the liquid supply mode. In the liquid supply mode, the three-way valve 12 is initially closed. The closed three-way valve 12 does not allow solvent flow. Therefore, the solvent in this step will not flow into the first tank 11 from the inlet 105. Furthermore, the valve 16 is open. Thus, the solvent stored in the first tank 11 reaches the valve 16 through the foamer 13, sensor 14, pump 15, and branch point 19d, and flows towards the first branch point TP1. In addition, the foamer 13 is preferably fully open at this time.

[0172] When one of the valves 61, 62, 63, 64, 71, 72, 73, 74, 81, 82, 83, 84, 91, 92, 93, 94, which were closed in this step, becomes open, the solvent reaching the pressure sensor 51 reaches the resist chamber through the piping corresponding to the valve that is open.

[0173] Step S14: After the first degassing device 6a enters liquid supply mode, solvent is supplied to the second tank 21 in the second degassing device 6b. This action takes into account the measure of emptying the first tank 11 in the first degassing device 6a. Figure 11 This also indicates the solvent flow in this step. In this step, the three-way valve 22 is switched to the solvent supply source 50 side. Therefore, the solvent from the solvent supply source 50 reaches the second tank 21 through the upstream pipe 20c, the three-way valve 22, the inflow pipe 29a, and the inlet 205. At this time, the pump 25 is not operating, and the valve 26 is closed. Therefore, the solvent in this step does not flow through the outflow pipe 29b or the return pipe 29c. That is, the solvent from the solvent supply source 50 is stored in the second tank 21.

[0174] Step S15: When the storage of solvent in the second tank 21 is completed, the second degassing device 6b enters degassing mode. In degassing mode, firstly, the three-way valve 22 is switched to the return piping 29c side. Then, the pump 25 is activated. Figure 12 This indicates the solvent flow in this step. The solvent from the second tank 21 in this step passes through outlet 206, foamer 23, sensor 24, and pump 25, then from branch point 29d via return pipe 29c to three-way valve 22, and from there via inflow pipe 29a to inlet 205 of the second tank 21. Furthermore, valve 26 is closed at this time. Thus, solvent degassing based on the second degassing device 6b is performed.

[0175] Step S16: When the first tank 11 of the first degassing device 6a, which is in liquid supply mode, becomes empty, the second degassing device 6b enters liquid supply mode. In liquid supply mode, firstly, the three-way valve 22 is in a closed state. The closed state of the three-way valve 22 does not allow the flow of solvent. Therefore, the solvent in this step will not flow from the inlet 205 into the second tank 21. Furthermore, the valve 26 becomes open. Thus, the solvent stored in the second tank 21 reaches the valve 26 through the foamer 23, sensor 24, pump 25, and branch point 29d, and flows towards the first branch point TP1. In addition, the foamer 23 is preferably fully open at this time. Figure 13 This indicates the solvent flow in this step.

[0176] Step S17: When the second degassing device 6b is in liquid supply mode, the first tank 11 is started to be filled with liquid. Figure 13 This indicates the solvent flow in this step.

[0177] Step S18: When the liquid injection of the first tank 11 is completed, the first degassing device 6a enters the degassing mode. Figure 14 This indicates the solvent flow in this step. When degassing of the first tank 11 is complete, preparation is complete to set the first degassing device 6a to liquid supply mode. Thus, the operation of the degassing chamber 6 in this example is finished.

[0178] <16. Switching Control Unit>

[0179] The control unit 139 sets the first degassing device 6a to liquid supply mode and the second degassing device 6b to degassing mode. Thus, solvent is supplied to the resist chambers 41, 42, 43, and 44 via the first degassing device 6a, and the solvent is degassed via the second degassing device 6b. Alternatively, the control unit 139 sets the second degassing device 6b to liquid supply mode and the first degassing device 6a to degassing mode, thereby also supplying solvent to the resist chambers 41, 42, 43, and 44 via the second degassing device 6b, and degassing via the first degassing device 6a. If the control unit 139 performs substrate processing while switching the liquid supply source between the first degassing device 6a and the second degassing device 6b, the supply of solvent from the degassing chamber 6 will not be interrupted.

[0180] <17. Feedback Control of Pressure Sensors>

[0181] Next, refer to Figure 2 The feedback control of pressure sensor 51 will be explained. When the first degassing device 6a or the second degassing device 6b is in liquid supply mode, pressure sensor 51 measures the pressure of the solvent supplied to the pre-wetting branch pipes PW1, PW2, PW3, and PW4. At this time, if the measured pressure does not meet the reference pressure, the substrate pre-wetting treatment may not be sufficient due to insufficient solvent pressure. Therefore, the control unit 139 increases the output of pump 15 or pump 25 based on the detection result of pressure sensor 51, so that the pressure of the solvent supplied to the pre-wetting branch pipes PW1, PW2, PW3, and PW4 becomes the reference pressure. In this feedback control, which pump is used and which degassing device is in liquid supply mode is determined.

[0182] Thus, by using the pressure of the solvent supplied to the pre-wetting branches PW1, PW2, PW3, and PW4 as a reference for feedback control of the solvent pressure, various processes using solvent can be reliably performed. Compared to other piping such as the tank rinsing branch PTR1, the pre-wetting branches PW1, PW2, PW3, and PW4 have a larger solvent flow. Therefore, the pressure of the solvent supplied to the pre-wetting branches PW1, PW2, PW3, and PW4 is higher than the pressure supplied to other piping. This pressure difference is achieved by regulators 52, 53, and 54. Therefore, by adjusting the pressure of the solvent supply system based on the pre-wetting branches PW1, PW2, PW3, and PW4, the highest pressure among all piping types can be reliably achieved.

[0183] That is, according to the substrate processing system of this example, the pressure fluctuations caused by the fluctuating amount of solvent due to the multiple resist chambers are eliminated by feedback control, so that substrate processing can be performed while the solvent is stably supplied.

[0184] For example, such as Figure 15As explained, one of the four resist chambers 41, 42, 43, and 44, resist chamber 41, allows solvent to flow in the pre-wetted branch pipe PW1. The remaining three resist chambers 42, 43, and 44 do not use solvent during the substrate W transfer process. In this state, pressure sensor 51 can easily detect high pressure. This is because, in current substrate processing systems, only a small amount of solvent is used.

[0185] On the other hand, such as Figure 16 As shown, when the solvent flows through the pre-wetting branch pipe PW1 in the resist chamber 41, and the remaining resist chambers 42, 43, and 44 are all filled with solvent flowing through the tank rinsing branch pipes PTR2, PTR3, and PTR4, the pressure sensor 51 easily detects low pressure. This is because a large amount of solvent is used in current substrate processing systems.

[0186] In the substrate processing system of this example, such as Figure 16 As shown, the pump 15 is controlled by feedback based on the detection result of the pressure sensor 51. Therefore, the detection result of the pressure sensor 51 is a fixed value regardless of the state of the substrate processing system. Thus, according to the present invention, a fixed pressure is applied to the pre-wetting piping PW regardless of the operating conditions of the resist chambers 41, 42, 43, and 44. This is because the pressure sensor 51 is located in the middle of the pre-wetting piping PW. If configured in this way, substrate processing using the nozzle 10 is performed at an appropriate hydraulic pressure. This is because the nozzle 10 receives the liquid supply from the pre-wetting piping PW. A decrease in the hydraulic pressure in the pre-wetting piping PW affects the substrate processing. However, according to this example, the pressure of the pre-wetting piping PW is appropriate and fixed under all circumstances, therefore, such a problem does not occur.

[0187] <18. Effects of the Invention>

[0188] According to the above structure, a pressure sensor 51 for detecting the pressure of the liquid in the pre-wetting pipe PW and a control unit 139 for controlling the pump 15 are included. The flow rate of the processing liquid in the pre-wetting pipe PW is high, while the flow rate of the processing liquid in the second branch pipe, represented by the tank flushing pipe PTR, is low. The control unit 139 controls the output of the pump 15 so that the pressure sensor 51 detects a predetermined value. Even if the pressure of the liquid in the pre-wetting pipe PW decreases due to the increased flow of liquid in the tank flushing pipe PTR, the output of the pump 15 can be increased to compensate for this decrease. If the pre-wetting pipe PW requires a large amount of liquid, a high pressure is always required within the pre-wetting pipe PW. The above structure satisfies this requirement, and the resist chamber 41 can perform substrate processing under appropriate conditions. With such a configuration, substrate processing can be reliably performed.

[0189] According to the above structure, the pre-wetting piping PW is connected to the nozzle 10 that sprays the processing liquid onto the upper surface of the substrate inside the resist chamber 41. This structure enables the nozzle 10, which requires a large amount of processing liquid within the resist chamber 41, to supply the processing liquid at an appropriate pressure.

[0190] According to the above structure, the second branch pipe is the back rinse pipe BR for cleaning the back side of the substrate in the resist chamber 41. Therefore, the pressure applied to the nozzle provided in the pre-wetting pipe PW will not change regardless of whether back rinse treatment is performed. With this configuration, substrate processing can be reliably performed.

[0191] According to the above structure, the second branch pipe is the tank rinsing pipe PTR for cleaning the nozzles of the resist chamber 41. Therefore, the pressure applied to the nozzles installed in the pre-wetting pipe PW will not change regardless of whether tank rinsing is performed. With this configuration, substrate processing can be reliably performed.

[0192] According to the above structure, the second branch pipe is the edge rinsing pipe (EBR) for cleaning the substrate periphery of the resist chamber 41. Therefore, the pressure applied to the nozzles provided in the pre-wetting pipe (PW) will not change regardless of whether edge rinsing treatment is performed. With this configuration, substrate processing can be reliably performed.

[0193] Based on the above structure, the amount of liquid flowing in the second branch pipe can be suppressed by the regulators 52, 53, and 54, thus suppressing the unnecessary consumption of liquid.

[0194] In substrate processing apparatuses with multiple resist chambers 41, as in this example, it is common for liquid to flow simultaneously through the pre-wetting piping PW and the second branch pipe. Specifically, for example, liquid treatment of the substrate surface using the nozzle 10 is performed in the first resist chamber 41, while liquid treatment through the second branch pipe is performed in the second resist chamber 41. According to the present invention, the pressure in the pre-wetting piping PW can be easily reduced. Even with such a substrate processing apparatus structure, substrate processing can be performed without reducing the pressure of the liquid in the nozzle 10.

[0195] In a substrate processing apparatus 1, where the pre-wetting pipe PW, serving as the first branch pipe as in this example, is located downstream of the tank flushing pipe PTR, back flushing pipe BR, cup flushing pipe CR, and edge flushing pipe EBR, serving as the second branch pipe, the pressure of the pre-wetting pipe is particularly prone to decrease due to the flow of liquid in the tank flushing pipe PTR, back flushing pipe BR, cup flushing pipe CR, and edge flushing pipe EBR. According to the present invention, the pressure of the pre-wetting pipe PW can be reliably stabilized through feedback control, thus preventing this problem.

[0196] <19. Variations>

[0197] The present invention is not limited to the above structure and can be modified as follows.

[0198] <Variation Example 1>

[0199] The degassing chamber 6 in the embodiment has two degassing devices, but the number of degassing devices can be increased or decreased depending on the purpose of the degassing chamber 6.

[0200] <Variation Example 2>

[0201] The sensor 14 in the embodiment is not a necessary structure for the present invention. If the conditions required for degassing are determined in advance, it is sufficient to reproduce those conditions during the degassing process. Therefore, according to this modified example, the degassing chamber 6 can be constructed even without confirming the disappearance of bubbles using the sensor 14.

[0202] <Variation Example 3>

[0203] Instead of sensor 14 in the embodiment, an electrostatic capacitive sensor that detects the water level in the first tank 11 can also be used to construct the degassing chamber 6 in this example. Figure 17 The structure of the first container 11 in this modified example will be described. A liquid guide tube 11a extending vertically is attached to the first container 11. The upper and lower ends of the liquid guide tube 11a are connected to the first container 11. Therefore, the height of the liquid level P1 of the solvent stored in the first container 11 is the same as the height of the liquid level P2 of the solvent guided into the liquid guide tube 11a. An electrostatic capacitive sensor 14a is located midway through the liquid guide tube 11a and is used to detect the presence or absence of the liquid level P2. If degassing of the solvent stored in the first container 11 is performed, bubbles generated from the liquid are stored in the first container 11, thereby lowering the liquid level P1 of the first container 11. Since the liquid guide tube 11a is connected to the first container 11, as the liquid level P1 decreases, the liquid level P2 of the liquid guide tube 11a also decreases. When the liquid level P2 in the liquid guide tube 11a decreases, the electrostatic capacitive sensor 14a detects this decrease in liquid level P2. The detection result of such an electrostatic capacitive sensor 14a can be used to determine the end time of the degassing mode in the first degassing device 6a. Alternatively, the electrostatic capacitive sensor 14a can be configured to be placed on the side of the first tank 11 to directly measure the liquid level P1. In this case, the liquid guide tube 11a may not be necessary.

[0204] <Variation Example 4>

[0205] The foamer 13 in the embodiment is provided with needles 133 for controlling the foaming process, but the present invention is not limited to this structure. A foamer 13a without needles 133 can also be constructed. Figure 18This illustrates an example of a structure related to this modified example. The foamer 13a of this modified example has multiple bases 131a and 131b, and the diameter of the path through which the solvent passes in the central portion CT differs between each base 131a and 131b. For example, when the solvent passes through base 131a, the solvent can be degassed through a wider path. Conversely, for example, when the solvent passes through base 131b, the solvent can be degassed through a narrower path. The base switching for degassed processing is achieved by switching the opening and closing state of the valve 135 attached to each base. The foamer control unit 134 controls the opening and closing of the valve 135.

[0206] <Variation Example 5>

[0207] In addition, such as Figure 18 As shown, it can also be configured with a bypass passage 19y that does not pass through the bases 131a and 131b. The bypass passage 19y serves as a flow path that short-circuits the solvent inlet and outlet of the foamer 13 or the foamer 13a described above. By providing such a bypass passage 19y, the solvent can be rapidly discharged into each of the resist chambers 41, 42, 43, and 44 in the liquid supply mode of the degassing device. At this time, the flow of solvent is not obstructed by the foamer 13, and therefore, the load on the pump 15 in the liquid supply mode is minimized.

[0208] <Variation Example 6>

[0209] In the embodiment, the needle 133 is not adjusted in the degassing mode, but it can be operated during the degassing mode. For example, it can be configured such that the foamer 13, which is in a fully open state, gradually becomes fully closed as the solvent degassing process in the degassing mode proceeds. With this configuration, reliable degassing can be performed on solvents that are difficult to foam during degassing. Alternatively, it can be configured such that the foamer 13, which is in a fully closed state, gradually becomes fully open as the solvent degassing process in the degassing mode proceeds. With this configuration, the flow rate of the solvent through the foamer 13 can be increased over time, enabling efficient degassing.

[0210] In this modified example, the foamer control unit 134 is configured such that the control needle 133 adjusts the cross-sectional area of ​​the flow path of the central CT as the degassing process proceeds.

[0211] <Variation Example 7>

[0212] In addition to the structure of the embodiments, such as Figure 19As shown, the device can also be configured such that a collection tank 11b for collecting bubbles is located downstream of the foamer 13 in the first degassing device 6a. The collection tank 11b has an inlet 105a and an outlet 106a at its bottom. The inlet 105a is connected to an outlet pipe 19b, and the outlet 106a is connected to a return pipe 19c. The solvent containing bubbles, flowing through the outlet pipe 19b, reaches the collection tank 11b through the inlet 105a. In the collection tank 11b, the solvent separates from the bubbles. The solvent with the bubbles removed flows out of the collection tank 11b through the outlet 106a and returns to the first tank 11 through the return pipe 19c. If configured in this way, the bubbles in the solvent can be reliably removed. Furthermore, this modification can also be applied to the second degassing device 6b.

[0213] <Variation Example 8>

[0214] The base 131 in the embodiment is a straight line, but the present invention is not limited to this structure. The base 131 can also be bent.

[0215] <Variation Example 9>

[0216] In the embodiment, the cross-sectional shape of the central CT is tapered, but the present invention is not limited to this structure and can also be configured as a flow path with a fixed inner diameter of the central CT.

[0217] <Variation Example 10>

[0218] The degassing device in the above structure is located on the coating block 5 and is a structure for supplying liquid to the resist chambers 41, 42, 43, and 44, but the present invention is not limited to this structure. Figure 20 As shown, it is also possible to configure the developing block 7 to have a degassing device. In this modified example, the degassing chamber 6 is disposed in the fourth column CL4 of the developing block 7, which has a developing chamber 77. In this modified example, the degassing chamber 6 is a structure that supplies developing solution to the developing chamber 77.

[0219] Figure 21 The structure of the degassing chamber 6 and the piping connection between the degassing chamber 6 and the developing chambers 77a, 77b, 77c, and 77d will be described. Thus, the developing block 7 is configured such that four developing chambers 77a, 77b, 77c, and 77d are provided, and they operate independently, thereby allowing for the simultaneous developing of up to four substrates W.

[0220] like Figure 21 As shown, the upstream structure of the combined pipe 20b is similar to... Figure 2 The structures of the embodiments described herein are the same, therefore, detailed descriptions related thereto are omitted.

[0221] According to this modification, a pressure sensor 701 is installed downstream of the combined pipe 20b. The pressure sensor 701 has the same structure as the pressure sensor 51 in the embodiment, and measures the pressure applied to the developer solution reaching the regulator 711. Furthermore, downstream of the pressure sensor 701, in addition to the regulator 711, regulators 712, 713, and 714 are connected in parallel.

[0222] The regulator 711, etc., is a structure installed midway through the piping and is capable of controlling the pressure of the downstream developer. This is the same structure as the regulator 52, etc., in the embodiment.

[0223] The primary side of the regulator 711 is connected to the pressure sensor 701, and the secondary side is connected to the nozzle 10 of the developing chamber 77a. Developer solution supplied through the regulator 711 is supplied to the nozzle 10 via developer solution piping N1. Valve 721 is located on the secondary side of the regulator 711 and midway through the developer solution piping N1. Valve 721 is a control valve that selects whether developer solution is ejected from the nozzle 10.

[0224] The primary side of the regulator 712 is connected to the pressure sensor 701, and the secondary side is connected to the nozzle 10 of the developing chamber 77b. Developer solution supplied to the nozzle 10 via the regulator 712 is supplied to the nozzle 10 through the developer solution piping N2. Valve 722 is located on the secondary side of the regulator 712 and midway through the developer solution piping N2. Valve 722 is a control valve that selects whether developer solution is ejected from the nozzle 10.

[0225] The primary side of the regulator 713 is connected to the pressure sensor 701, and the secondary side is connected to the nozzle 10 of the developing chamber 77c. Developer supplied to the nozzle 10 via the regulator 713 through the developer piping N3. A valve 723 is located on the secondary side of the regulator 713 and midway through the developer piping N3. The valve 723 is a control valve that selects whether developer is ejected from the nozzle 10.

[0226] The primary side of the regulator 714 is connected to the pressure sensor 701, and the secondary side is connected to the nozzle 10 of the developing chamber 77d. Developer supplied to the nozzle 10 via the regulator 714 through the developer piping N4. A valve 724 is located on the secondary side of the regulator 714, midway through the developer piping N1. The valve 724 is a control valve that selects whether developer is ejected from the nozzle 10.

[0227] According to this modified example, the degassing of the developer can be reliably performed. Furthermore, according to this modified example, since multiple degassing devices are provided, one degassing device can be switched to liquid supply mode while another degassing device is in degassing mode, thus preventing interruption of the developer supply due to the degassing process.

Claims

1. A substrate processing apparatus characterized by comprising: Having: a chamber that performs liquid processing on a substrate in a horizontal posture; a tank that stores a processing liquid; a main pipe that allows the processing liquid to flow from the tank; a pump that is provided to the main pipe and sends out the processing liquid; a plurality of branch pipes that branch from the main pipe downstream of the pump and deliver the processing liquid to a plurality of processing sections in the chamber; and a control section that controls the pump, the plurality of branch pipes include a first branch pipe in which the flow rate of the processing liquid is the largest and a second branch pipe in which the flow rate of the processing liquid is smaller than that of the first branch pipe, a pressure gauge for detecting the pressure of the processing liquid is provided to the first branch pipe among the plurality of branch pipes, the control section controls the output of the pump so that the pressure gauge detects a prescribed value.

2. The substrate processing apparatus according to claim 1, wherein the first branch pipe is connected to a nozzle that sprays the processing liquid toward the upper surface of the substrate in the chamber.

3. The substrate processing apparatus according to claim 1, wherein the second branch pipe is a back flush pipe for back surface cleaning of the substrate in the chamber.

4. The substrate processing apparatus according to claim 1, wherein the second branch pipe is a groove flush pipe for nozzle cleaning in the chamber.

5. The substrate processing apparatus according to claim 1, wherein the second branch pipe is an edge flush pipe for edge cleaning of the substrate in the chamber.

6. The substrate processing apparatus according to claim 1, wherein the second branch pipe has a regulator that reduces the pressure of the liquid.

7. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has a plurality of chambers.

8. The substrate processing apparatus according to claim 1, wherein the first branch pipe is located downstream of the second branch pipe.

9. A control method of a substrate processing apparatus that has a chamber that performs liquid processing on a substrate in a horizontal posture while rotating the substrate, a tank that retains a liquid, a main pipe that allows the liquid to flow from the tank to the chamber, a pump that is provided to the main pipe and sends out the liquid, a first branch pipe and a second branch pipe that branch from the main pipe downstream of the pump and are connected to the chamber, respectively, and a pressure gauge that is provided to the first branch pipe and detects the pressure of the liquid, characterized by performing feedback control of the pump in accordance with the detected pressure of the liquid. ​

Images