Wafer processing device and semiconductor processing equipment
By coordinating the power supply and liquid supply components in the wafer processing equipment, and utilizing the reaction of the process liquid between the electrode assembly and the wafer, the problem of probe damage to the pads forming aluminum pins was solved, achieving efficient removal of aluminum pins and improving wafer quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-29
- Publication Date
- 2026-03-27
AI Technical Summary
After the wafer is tested, the probes damage the pads, forming protruding aluminum pins, which makes it impossible to guarantee the quality of the wafer.
Using a wafer processing device, through the cooperation of power supply components and liquid supply components, a continuous liquid flow is formed between the electrode components and the wafer using process liquid to achieve the reduction and oxidation reaction of aluminum pins and eliminate aluminum pins on the pads.
Effective removal of aluminum pins improves wafer quality, reduces reaction time and side-penetration, and ensures wafer integrity.
Smart Images
Figure CN121752003A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor technology, and in particular to a wafer processing device and a semiconductor processing equipment. BACKGROUND
[0002] After the wafer manufacturing is completed and before the wafer is packaged, the wafer needs to be subjected to wafer acceptance testing to detect the electrical performance of the wafer. In the process of wafer acceptance testing, the probe on the wafer testing device and the pad on the wafer are used to perform contact testing. Thus, the probe is easy to cause damage to the pad to form a protruding aluminum needle on the surface of the pad. Therefore, the quality of the wafer after the wafer acceptance testing cannot be guaranteed. SUMMARY
[0003] To solve the above technical problems, the present application provides a wafer processing device and a semiconductor processing equipment for guaranteeing the quality of the wafer after the wafer acceptance testing.
[0004] The present application is implemented through the following technical solutions.
[0005] The first aspect of the present application provides a wafer processing device, which comprises a body and at least one electrode mechanism. The body has a containing space for containing a wafer. The electrode mechanism comprises an electrode assembly, a liquid supply assembly and a power supply assembly. The electrode assembly is contained in the containing space and is spaced apart from one side of the wafer along a first direction. The liquid supply assembly is arranged on the body and is used to supply a process liquid between the electrode assembly and the wafer. The power supply assembly is arranged on the body, and a positive electrode end of the power supply assembly is electrically connected to the wafer, and a negative electrode end of the power supply assembly is electrically connected to the electrode assembly. In the case of power supply of the power supply assembly, the process liquid forms a continuous liquid flow and simultaneously contacts the electrode assembly and the protruding aluminum needle on the wafer. A reduction reaction occurs at the electrode assembly, and an oxidation reaction occurs at the wafer.
[0006] In the technical solution of the present application, the containing space inside the body is used to provide a containing space for the wafer and the electrode assembly. Since the positive electrode end of the power supply assembly is electrically connected to the wafer, and the negative electrode end of the power supply assembly is electrically connected to the electrode assembly, after the power supply assembly is powered on, the wafer will be positively charged, and the electrode assembly will be negatively charged. Since the liquid supply assembly supplies the process liquid between the electrode assembly and the wafer, and the process liquid can form a continuous liquid flow which simultaneously contacts the wafer and the electrode assembly, in the case of power supply of the power supply assembly, electrons will be on the electrode assembly, and the cations in the process liquid can obtain electrons at the electrode assembly to be reduced, and the anions in the process liquid will contact the protruding aluminum needle on the pad of the wafer to cause the aluminum needle to undergo an oxidation reaction, thereby corroding the aluminum needle. In this way, the effect of eliminating the aluminum needle on the pad is achieved. The power supply of the power supply assembly and the tip charge aggregation effect of the aluminum needle accelerate the efficiency of the removal of the aluminum needle, thereby guaranteeing the quality of the wafer.
[0007] In some embodiments of the present application, the process liquid comprises a hydrofluoric acid solution; or, the process liquid comprises hydrogen peroxide, ammonia water and deionized water.
[0008] In this way, when the process liquid is a hydrofluoric acid solution, the hydrogen ions in the hydrofluoric acid solution will gain electrons to generate hydrogen gas at the electrode assembly, and the fluorine ions in the hydrofluoric acid solution will combine with the protruding aluminum needles on the wafer to generate hexafluoroaluminate ions at the same time, so as to achieve the effect of eliminating the aluminum needles. When the process liquid is a mixture of hydrogen peroxide, ammonia water and deionized water, the hydrogen peroxide will also gain electrons to generate hydroxyl ions at the electrode assembly, and the hydroxyl ions will exist in the process liquid. Then, at the wafer, the hydroxyl ions will combine with the protruding aluminum needles on the wafer to generate aluminum hydroxide and ammonia water at the same time, so as to achieve the effect of eliminating the aluminum needles. Through the above two process liquids, the aluminum needles on the wafer can be effectively eliminated, so as to ensure the quality of the wafer.
[0009] In some embodiments of the present application, the electrode assembly has a channel inside, a first end of the channel is in communication with the liquid supply assembly and is used to receive the process liquid from the liquid supply assembly, and a second end of the channel is located at one end of the electrode assembly close to the wafer in the first direction, and the process liquid flowing out of the second end of the channel can form a continuous liquid flow to flow through the wafer.
[0010] In this way, since the first end of the channel is in communication with the liquid supply assembly, and the second end of the channel is located at one end of the electrode assembly close to the wafer, when the liquid supply assembly provides the process liquid to the first end of the channel, the process liquid will flow through the channel, and then flow to the wafer through the second end of the channel to contact the wafer, so as to ensure the full reaction of the process liquid with the aluminum needles on the wafer and the electrode assembly. Since the channel is located inside the electrode assembly, when the process liquid flows through the channel, the cations in the process liquid can quickly and fully combine with the electrons to generate reduction reaction, so as to ensure the sufficient amount of anions in the process liquid for oxidation reaction with the aluminum needles, thereby ensuring the efficiency of removing the aluminum needles.
[0011] In some embodiments of the present application, the electrode assembly comprises an electrode part and a spraying part, the spraying part is connected to one end of the electrode part close to the wafer in the first direction, the channel is located in the electrode part, and the second end of the channel is provided at one end of the electrode part close to the wafer, the spraying part has a spraying space inside in communication with the second end of the channel, and the spraying part further has a plurality of spraying openings in communication with the spraying space and facing the wafer on the side away from the electrode part; and the negative end of the power supply assembly is at least electrically connected to the electrode part.
[0012] In this way, when the process liquid flows, the process liquid first passes through the channel, and in this process, the process liquid contacts the electrode component. Since the negative end of the power supply assembly is at least electrically connected to the electrode component, a reduction reaction occurs when the process liquid contacts the electrode component. Then, the process liquid enters the spraying space and flows out through the plurality of spray nozzles to spray onto the wafer. The cooperation of the spraying space and the plurality of spray nozzles can ensure that the process liquid flowing out of the spray nozzles has a higher pressure, so as to ensure that a stable and continuous liquid flow can be formed between the spray nozzles and the wafer, thereby ensuring the stable progress of the oxidation-reduction reaction.
[0013] In some embodiments of the present application, the spraying component includes a cooperation part and a distribution part. In the first direction, the distribution part is arranged at one end of the electrode component close to the wafer and is spaced apart from the electrode component, and the cooperation part is connected to the outer periphery of the electrode component around the second end of the channel and is connected with the distribution part to form the spraying space, and the plurality of spray nozzles are located in the distribution part.
[0014] In this way, the cooperation part is responsible for connecting the distribution part and the electrode component, and cooperates with the distribution part to form a spraying space with a notch, and the end of the second end of the channel on the electrode component extends into the spraying space through the notch, so that the spraying space and the second end of the channel can be communicated. The spraying component with this structure improves the convenience of cooperation with the electrode component, ensures the reliability and convenience of the structure.
[0015] In some embodiments of the present application, the distribution part includes a spraying area and a sealing area. In the first direction, the spraying area is arranged opposite to the second end of the channel, and the plurality of spray nozzles are located in the spraying area, and the sealing area surrounds the outer periphery of the spraying area; and the electrode assembly further includes a sealing component, which is sealingly arranged between the sealing area and the electrode component and surrounds the spraying area in the first direction.
[0016] In this way, in the first direction, the second end of the channel can be opposite to the spraying area to guide the process liquid to the spray nozzles. Since the sealing area surrounds the outer periphery of the spraying area, and the sealing component is arranged between the sealing area and the electrode component and surrounds the spraying area, the sealing component can be sealed outside the area where the second end of the channel and the spray nozzles are communicated, so as to prevent the process liquid between the second end of the channel and the spray nozzles from leaking out of the gap between the cooperation part and the electrode component, to ensure that the spraying space has sufficient pressure, to ensure the continuity and stability of the process liquid flowing out of the spray nozzles, and to ensure the removal efficiency of the aluminum needles on the wafer.
[0017] In some embodiments of the present application, the distance between the side of the spraying component where the plurality of spray nozzles are located and the wafer is in the range of 2mm-4mm in the first direction.
[0018] In this way, the distance between the side of the plurality of spray nozzles on the spray component and the wafer in the first direction is within a suitable range, which can ensure that a continuous liquid flow is formed between the spray nozzles and the wafer, and the oxidation-reduction reaction can be continuously and stably performed, and the efficiency of removing the aluminum needle can be ensured. The lower limit of 2 mm can make the fluid pressure of the process liquid sprayed from the spray nozzles not too large, so that the process liquid can form a continuous and stable liquid flow between the wafer and the spray nozzles, and the upper limit of 4 mm can not only ensure that a continuous and stable liquid flow is formed between the spray nozzles and the wafer, but also avoid the distance between the wafer and the spray nozzles being too close, which is convenient for the position setting of the wafer and the electrode assembly.
[0019] In some embodiments of the present application, the liquid supply assembly includes a liquid storage component, a pipeline, and a power component. The liquid storage component is configured to store the process liquid. The pipeline has a liquid inlet end in communication with the inside of the liquid storage component and a liquid outlet end in communication with the first end of the channel. The power component is arranged in the pipeline and configured to drive the process liquid to flow through the pipeline.
[0020] In this way, the liquid storage component is configured to store the process liquid, the pipeline is configured to connect the liquid storage component and the first end of the channel, and the power component is configured to drive the process liquid to flow through the pipeline. When the liquid supply is started, the power component can suck the process liquid in the liquid storage component into the pipeline, and the process liquid can flow into the channel through the pipeline, and then flow to the wafer through the channel. Through the cooperation of the liquid storage component, the pipeline, and the power component, the automation, efficiency, and convenience of the liquid supply can be ensured.
[0021] In some embodiments of the present application, the liquid supply assembly further includes a valve arranged in the pipeline and configured to open or close the pipeline. The wafer processing device further includes a controller electrically connected to the valve of at least one electrode mechanism and electrically connected to the power supply assembly of at least one electrode mechanism. The controller is configured to control the power supply assembly to supply power based on the opening signal of the valve.
[0022] In this way, the valve is arranged on the pipeline, and the valve can open the pipeline when the valve is opened, and the valve can close the pipeline when the valve is closed. Since the valve and the controller are electrically connected, when the valve is opened to open the pipeline, the opening signal of the valve can also be transmitted to the controller. At this time, the controller can control the power supply assembly to supply power based on the opening signal, that is, the power supply of the electrode assembly and the start of the liquid supply are almost synchronous. In this way, the process liquid can be fully utilized to process the wafer, and the control accuracy can be ensured.
[0023] In some embodiments of the present application, the number of electrode mechanisms is two, and the electrode mechanisms include a first electrode mechanism and a second electrode mechanism. The process liquid provided by the liquid supply assembly of the first electrode mechanism includes a hydrofluoric acid solution, and the process liquid provided by the liquid supply assembly of the second electrode mechanism includes hydrogen peroxide, ammonia water, and deionized water.
[0024] In this way, the wafer processing device in the present application is provided with two electrode mechanisms, which can be used to process the wafer with hydrofluoric acid solution and a mixed solution of hydrogen peroxide, ammonia and deionized water, so that the wafer processing device can simultaneously use the hydrofluoric acid solution and the mixed solution of hydrogen peroxide, ammonia and deionized water, thereby improving the utilization rate of the solution.
[0025] The second aspect of the present application provides a semiconductor processing device, which comprises a wafer testing device and the wafer processing device in any of the above embodiments. The wafer testing device comprises a probe, which is used to contact the pads on the wafer to detect the electrical properties of the wafer. The wafer after detection is accommodated in the accommodation space of the wafer processing device.
[0026] In the technical scheme of the present application, the probe of the wafer testing device contacts the pads on the wafer to detect the electrical properties of the wafer. After the contact, an aluminum needle can be formed on the surface of the pad. Then, the wafer with the aluminum needle is placed in the accommodation space of the wafer processing device, so that the aluminum needle can be efficiently removed by the wafer processing device, thereby ensuring the quality of the wafer. BRIEF DESCRIPTION OF DRAWINGS
[0027] Figure 1 FIG. 1 is a structural schematic diagram of a semiconductor processing device provided by an embodiment of the present application; Figure 2 FIG. 2 is a first structural schematic diagram of a wafer processing device provided by an embodiment of the present application; Figure 3 FIG. 3 is a second structural schematic diagram of a wafer processing device provided by an embodiment of the present application; Figure 4 FIG. 4 is a structural schematic diagram of a spraying component provided by an embodiment of the present application; Figure 5 FIG. 5 is a third structural schematic diagram of a wafer processing device provided by an embodiment of the present application.
[0028] It should be noted that the above-mentioned "first" and "second" are only used to distinguish different schemes, and do not represent the degree of superiority or priority in the implementation process.
[0029] BRIEF DESCRIPTION OF DRAWINGS 1000 - Semiconductor processing apparatus; 100 - Wafer testing device; 110 - Probe; 200 - Wafer processing device; 201 - Body; a - Containment space; 202 - Electrode mechanism; 210 - Electrode assembly; b - Passage; 211 - Electrode part; 212 - Spray part; c - Spray opening; d - Spray space; 2121 - Fitting part; 2122 - Distributing part; 213 - Sealing part; 220 - Liquid supply assembly; 221 - Liquid storage part; 222 - Conduit; 223 - Power part; 224 - Valve; 230 - Power supply assembly; 240 - Controller; 1 - Wafer; 11 - Aluminum needle; X - First direction. DETAILED DESCRIPTION
[0030] The embodiments of the technical solutions of the present application will be described in detail below with reference to the drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot limit the protection scope of the present application.
[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application; the terms "include" and "have" and any variations thereof used in the specification and the above description of the drawings are intended to cover the non-exclusive inclusion.
[0032] In the description of the embodiments of the present application, the technical terms "first", "second", "third" and the like are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited.
[0033] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearance of the phrase in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily independent or alternative embodiments to other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0034] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which means that there are three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents the "or" relationship between the front and rear associated objects.
[0035] In the description of the embodiments of the present application, the directions or positional relationships indicated by the technical terms "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "circumferential" and the like are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed, operated or used in a particular orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.
[0036] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the technical terms "mounting", "connecting", "connecting", "fixing" and the like should be understood broadly, for example, can be fixed connection, can also be detachable connection, or integral; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.
[0037] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the technical term "contact" should be understood broadly, which can be direct contact or contact through an intermediate medium layer, and can be contact between two objects in contact without interaction force, or contact between two objects in contact with interaction force.
[0038] In the following, the present application will be described in detail.
[0039] After the wafer manufacturing is completed and before the packaging, the wafer needs to be subjected to wafer acceptance test (WAT) to detect the electrical performance of the wafer. In the process of wafer acceptance test, the probe on the wafer test device is used to contact test the pads on the wafer. However, after the contact test is completed, the probe will cause damage to the pads to form protruding aluminum needles on the surface of the pads. The height of the aluminum needles is generally high, and therefore it is difficult to remove. Therefore, the quality of the wafer after the wafer acceptance test cannot be guaranteed.
[0040] Based on this, as shown in Figure 1 The present application provides a semiconductor processing equipment 1000, which comprises a wafer test device 100 and a wafer processing device 200. The wafer test device 100 comprises a probe 110, which is used to contact the pads on the wafer 1 to detect the electrical performance of the wafer 1. The wafer 1 after detection is contained in the containing space a of the wafer processing device 200.
[0041] The wafer testing device 100 refers to a device for performing WAT testing on the wafer 1, and the electrical performance of the wafer 1 can be obtained after testing. The wafer processing device 200 refers to a device that can reprocess the wafer 1. If the wafer testing device 100 detects the wafer 1, resulting in the presence of the aluminum needle 11 on the surface of the wafer 1, the wafer processing device 200 can remove the aluminum needle 11.
[0042] Through the above arrangement, the probe 110 of the wafer testing device 100 contacts the pad on the wafer 1 to detect the electrical performance of the wafer 1. After the contact, the aluminum needle 11 can be formed on the surface of the pad. Then, the wafer 1 with the aluminum needle 11 is placed in the accommodation space a of the wafer processing device 200 to efficiently remove the aluminum needle 11 by using the wafer processing device 200, thereby ensuring the quality of the wafer 1.
[0043] In order to remove the aluminum needle 11, the related art uses standard cleaning solution No. 1 and hydrofluoric acid solution to eliminate the aluminum needle 11, and the following related tests are performed.
[0044] Table 1
[0045] For Table 1, the related art example 1 refers to the fact that after the passage of 130 seconds (s) of hydrofluoric acid solution and 70 seconds of standard cleaning solution No. 1, aluminum remains in the middle region, center, and edge of the aluminum needle 11, and at this time, the effect of eliminating the aluminum needle 11 is limited. The related art example 2 refers to the fact that after the passage of 130 seconds (s) of hydrofluoric acid solution and 130 seconds of standard cleaning solution No. 1, aluminum remains in the middle region and edge of the aluminum needle 11, and the height of the aluminum remaining in the center of the aluminum needle 11 is 1000 nm, and at this time, the effect of eliminating the aluminum needle 11 is also limited. The related art example 3 refers to the fact that after the passage of 130 seconds (s) of hydrofluoric acid solution and 160 seconds of standard cleaning solution No. 1, aluminum is removed from the middle region, center, and edge of the aluminum needle 11, and at this time, the removal effect is better. The related art example 4 refers to the fact that after the passage of 130 seconds (s) of hydrofluoric acid solution and 150 seconds of standard cleaning solution No. 1, aluminum remains in the middle region and edge of the aluminum needle 11, and the center of the aluminum needle 11 remains 400 nm, and at this time, as the time of the passage of standard cleaning solution No. 1 is shortened, the removal effect also decreases.
[0046] According to the above data, in order to eliminate the aluminum needle 11, the passage time of the hydrofluoric acid and the standard cleaning solution No. 1 is relatively long, and therefore the reaction time is relatively long and the efficiency is relatively low.
[0047] In addition, according to the data of the related technical embodiment 3, the wafer 1 was also tested in all directions and the following data was obtained. At the center point of the aluminum needle 11, 171 nm of aluminum remained and the pad was undamaged. At this time, a small amount of aluminum remained at the center point, and the height of the side digging along the thickness direction of the wafer was 1.4 μm. In the middle region of the aluminum needle 11, there was no aluminum residue and the pad was undamaged, and the side digging was 1.91 μm. At the edge, there was no aluminum residue and the pad was undamaged, and the side digging was 1.8 μm. Through further testing, it was found that although the related technical embodiment 3 achieved the effect of removing the aluminum needle 11, it also caused a serious side digging phenomenon (the bottom of the wafer side was corroded and hollowed out by the hydrogen fluoride acid and / or standard cleaning solution No. 1).
[0048] That is, the scheme for eliminating the aluminum needle 11 in the related art not only takes a long time, but also causes a side digging phenomenon, which easily leads to wafer defects.
[0049] Based on this, as shown in Figure 2 、 Figure 3 The wafer processing device 200 provided by the present application includes a body 201 and at least one electrode mechanism 202. The electrode mechanism 202 includes an electrode assembly 210, a liquid supply assembly 220, and a power supply assembly 230. The body 201 has a containing space a for containing the wafer 1. The electrode assembly 210 is contained in the containing space a and is spaced apart from one side of the wafer 1 along a first direction X. The liquid supply assembly 220 is arranged on the body 201 and is used to supply a process liquid between the electrode assembly 210 and the wafer 1. The power supply assembly 230 is arranged on the body 201, and a positive electrode end of the power supply assembly 230 is electrically connected to the wafer 1, and a negative electrode end of the power supply assembly 230 is electrically connected to the electrode assembly 210. When the power supply assembly 230 supplies power, the process liquid forms a continuous liquid flow and simultaneously contacts the electrode assembly 210 and the protruding aluminum needle 11 on the wafer 1. A reduction reaction occurs at the electrode assembly 210, and an oxidation reaction occurs at the wafer 1.
[0050] The first direction X can be any suitable manner, for example, the first direction X can be a direction inclined relative to the direction of gravity of the electrode assembly 210, or the first direction X is the direction of gravity of the electrode assembly 210. For the sake of understanding and illustration, the present application is described by taking the first direction X as the direction of gravity of the electrode assembly 210 as an example.
[0051] In some examples, the containing space a is formed inside the body 201 and is a closed chamber. The wafer 1 and the electrode assembly 210 are both contained in the closed chamber, and a closed processing environment is adopted to reduce environmental interference.
[0052] In some examples, the electrode assembly 210 is made of N-type heavily doped silicon carbide (SiC) material, so that when the power supply assembly 230 supplies negative electricity to the electrode assembly 210, and when the process liquid contacts the electrode assembly 210, the electrons can be easily transmitted from the electrode assembly 210 to the process liquid to cause a reduction reaction at the electrode assembly 210. In addition, the electrode assembly 210 made of this material can resist corrosion of the process liquid and has a long service life.
[0053] In some examples, along the first direction X, the wafer 1 is arranged below the electrode assembly 210. In order to facilitate the arrangement of the wafer 1, the wafer processing device 200 can further include a bearing assembly. The bearing assembly is arranged in the accommodation space a and is arranged below the electrode assembly 210 along the first direction X. The wafer 1 is arranged on one side of the bearing assembly close to the electrode assembly 210. When the power supply assembly 230 is electrically connected to the wafer 1, the bearing assembly has a conductive property and the positive electrode of the power supply assembly 230 is electrically connected to the bearing assembly. Thus, when the power supply assembly 230 supplies electricity, the wafer 1 carried on the bearing assembly can be supplied with electricity by supplying electricity to the bearing assembly. Thus, the placement and power supply of the wafer 1 are simultaneously solved.
[0054] In some examples, the liquid supply assembly 220 can include a power component 223 and a pipeline 222. The pipeline 222 can flow the process liquid. The power component 223 is used to drive the process liquid to flow through the pipeline 222. The liquid supply is realized by the cooperation of the pipeline 222 and the power component 223.
[0055] In some examples, the positive electrode of the power supply assembly 230 is electrically connected to the wafer 1, which means that when the power supply assembly 230 supplies electricity, positive electricity is transmitted to the wafer 1. The negative electrode of the power supply assembly 230 is electrically connected to the electrode assembly 210, which means that when the power supply assembly 230 supplies electricity, negative electricity is transmitted to the electrode assembly 210.
[0056] It can be understood that the power supply assembly 230 provides direct current. The power supply assembly 230 can be a direct current stabilized power supply, which directly provides a stable direct current. Alternatively, the power supply assembly 230 can be a rectifier transformer, which converts alternating current into direct current. Alternatively, the power supply assembly 230 can be a combination of a transformer and a rectifier cabinet, which reduces the voltage by the transformer and outputs direct current by the rectifier cabinet.
[0057] In addition, the process liquid can include a mixed solution of hydrogen peroxide, ammonia water and deionized water, or a hydrogen fluoride solution, etc.
[0058] It can be understood that the number of electrode mechanisms 202 should be based on the type of process liquid used in the actual processing of the wafer 1 in the wafer processing device 200. For example, if only hydrofluoric acid solution is used in the wafer processing device 200, only one electrode mechanism 202 is provided. If only a mixed solution of hydrogen peroxide, ammonia and deionized water is used, only one electrode mechanism 202 is provided. If both hydrofluoric acid solution and a mixed solution of hydrogen peroxide, ammonia and deionized water are used, two electrode mechanisms 202 are provided, and the liquid supply assembly 220 of one electrode mechanism 202 provides hydrofluoric acid solution, and the liquid supply assembly 220 of the other electrode mechanism 202 provides a mixed solution of hydrogen peroxide, ammonia and deionized water.
[0059] Through the above arrangement, the accommodation space a inside the body 201 is used to provide accommodation space a for the wafer 1 and the electrode assembly 210. Since the positive terminal of the power supply assembly 230 is electrically connected to the wafer 1, and the negative terminal of the power supply assembly 230 is electrically connected to the electrode assembly 210, when the power supply assembly 230 is powered on, the wafer 1 will be positively charged, and the electrode assembly 210 will be negatively charged. Since the liquid supply assembly 220 provides process liquid between the electrode assembly 210 and the wafer 1, and the process liquid can form a continuous liquid flow in contact with the wafer 1 and the electrode assembly 210, under the condition of power supply of the power supply assembly 230, electrons will be on the electrode assembly 210, and cations in the process liquid can obtain electrons at the electrode assembly 210 to be reduced, and anions in the process liquid will contact the protruding aluminum needle 11 on the pad of the wafer 1 to cause the aluminum needle 11 to oxidize and corrode, thereby achieving the effect of eliminating the aluminum needle 11 on the pad. The power supply of the power supply assembly 230 and the tip charge accumulation effect of the aluminum needle 11 accelerate the efficiency of removing the aluminum needle 11, and ensure the quality of the wafer 1. Since the efficiency of removing the aluminum needle 11 is accelerated, the time of the process liquid flowing in is correspondingly shortened, and the side digging phenomenon of the wafer 1 is controlled, and the quality of the wafer 1 is ensured.
[0060] In some embodiments of the present application, the process liquid includes hydrofluoric acid solution; or, the process liquid includes hydrogen peroxide, ammonia and deionized water.
[0061] In some examples, the process liquid includes hydrofluoric acid (HF) solution, that is, the aluminum needle 11 is removed by using hydrofluoric acid solution. The following lists the chemical reaction equations of the total reaction, the reduction reaction at the electrode assembly 210 and the oxidation reaction at the wafer 1 when hydrofluoric acid solution is used.
[0062] Total reaction when using hydrofluoric acid:
[0063] wherein the chemical reaction equation means that aluminum and fluoride ions and hydrogen ions react to form hydrogen gas, hexafluoroaluminate ions, and hydrogen ions.
[0064] Reduction reaction at the electrode assembly 210 when using hydrofluoric acid:
[0065] wherein the chemical reaction equation means that hydrogen ions are reduced to hydrogen gas by gaining electrons.
[0066] Oxidation reaction of the aluminum needles 11 at the wafer 1 when using hydrofluoric acid:
[0067] wherein the chemical reaction equation means that aluminum combines with fluoride ions and loses electrons to oxidize to form hexafluoroaluminate ions.
[0068] In some examples, the process liquid includes hydrogen peroxide, ammonia, and deionized water, that is, a mixed solution of hydrogen peroxide, ammonia, and deionized water is used to remove the aluminum needles 11. In this case, the following lists the chemical reaction equations for the overall reaction, the reduction reaction at the electrode assembly 210, and the oxidation reaction at the wafer 1 when using a mixed solution of hydrogen peroxide, ammonia, and deionized water.
[0069] Overall reaction when using hydrogen peroxide, ammonia, and deionized water:
[0070] wherein the chemical reaction equation means that aluminum, ammonia, and hydrogen peroxide react to form aluminum hydroxide and ammonia.
[0071] Reduction reaction at the electrode assembly 210 when using hydrogen peroxide, ammonia, and deionized water:
[0072] wherein the chemical reaction equation means that hydrogen peroxide is reduced to hydroxide by gaining two electrons.
[0073] Oxidation reaction of the aluminum needles 11 at the wafer 1 when using hydrogen peroxide, ammonia, and deionized water:
[0074] wherein the chemical reaction equation means that aluminum reacts with hydroxide to form aluminum hydroxide by losing electrons.
[0075] Exemplarily, the process liquid is standard cleaning solution No. 1 (SC1), and ammonia, hydrogen peroxide, and deionized water are mixed in a volume ratio of 1:2:5 to form the standard cleaning solution No. 1.
[0076] Through the above arrangement, when the hydrofluoric acid solution is used, the hydrogen ions in the hydrofluoric acid solution will obtain electrons to generate hydrogen gas at the electrode assembly 210, and the fluorine ions in the hydrofluoric acid solution will combine with the protruding aluminum needles 11 on the wafer 1 to generate hexafluoroaluminate ions at the same time, so as to achieve the effect of eliminating the aluminum needles 11. When the process liquid mixed by hydrogen peroxide, ammonia water and deionized water is used, the hydrogen peroxide will also obtain electrons to generate hydroxyl at the electrode assembly 210, and the hydroxyl will exist in the process liquid, so that the hydroxyl will combine with the protruding aluminum needles 11 on the wafer 1 to generate aluminum hydroxide and ammonia water at the same time at the wafer 1, so as to achieve the effect of eliminating the aluminum needles 11. Through the above two process liquids, the aluminum needles 11 on the wafer 1 can be effectively eliminated, so as to ensure the quality of the wafer 1.
[0077] In some embodiments of the present application, as shown in Figure 2 、 Figure 3 The electrode assembly 210 has a channel b inside, a first end of the channel b is in communication with the liquid supply assembly 220 and is used to receive the process liquid from the liquid supply assembly 220, a second end of the channel b is located at one end of the electrode assembly 210 close to the wafer 1, and the process liquid flowing out of the second end of the channel b can form a continuous liquid flow to flow through the wafer 1.
[0078] In some examples, the channel b extends along the first direction X to penetrate through the electrode assembly 210, so that the channel b can be arranged conveniently, and the process liquid can flow along the direction of gravity to contact the wafer 1 under the action of gravity.
[0079] Through the above arrangement, since the first end of the channel b is in communication with the liquid supply assembly 220, and the second end of the channel b is located at one end of the electrode assembly 210 close to the wafer 1, when the liquid supply assembly 220 provides the process liquid for the first end of the channel b, the process liquid will flow through the channel b, and then flow to the wafer 1 through the second end of the channel b to contact the wafer 1, so as to ensure the full reaction of the process liquid with the aluminum needles 11 on the electrode assembly 210 and the wafer 1. Since the channel b is located inside the electrode assembly 210, when the process liquid flows through the channel b, the process liquid can fully contact the electrode assembly 210, so that the cations in the process liquid can quickly and fully combine with the electrons to generate reduction reaction, so as to ensure the sufficient number of anions in the process liquid for oxidation reaction with the aluminum needles 11, thereby ensuring the efficiency of removing the aluminum needles 11.
[0080] In some other embodiments of the present application, the process liquid can also be directly introduced between the two surfaces opposite to the electrode assembly 210 and the wafer 1, and the pressure of the process liquid flowing out can be used to form a continuous liquid flow between the electrode assembly 210 and the wafer 1.
[0081] In some embodiments of the present application, as shown in Figure 2 、 Figure 3 、 Figure 4 electrode assembly 210 includes an electrode part 211 and a spraying part 212, the spraying part 212 is connected to the electrode part 211 near one end of the wafer 1 along the first direction X, the channel b is located in the electrode part 211, and the second end of the channel b is located at the end of the electrode part 211 near the wafer 1, the spraying part 212 has a spraying space d inside the spraying part 212 which is connected to the second end of the channel b, and the side of the spraying part 212 away from the electrode part 211 also has a plurality of spraying openings c which are connected to the spraying space d and face the wafer 1; the negative end of the power supply assembly 230 is at least electrically connected to the electrode part 211.
[0082] The negative end of the power supply assembly 230 can be electrically connected only to the electrode part 211, at which time the power supply assembly 230 provides negative electricity to the electrode part 211, so that a reduction reaction can occur during the process liquid flowing through the channel b. Alternatively, the negative end of the power supply assembly 230 is electrically connected to the electrode part 211 and the spraying part 212 at the same time, so as to provide negative electricity to the electrode part 211 and the spraying part 212 at the same time, so that a reduction reaction can occur during the process liquid flowing through the channel b and the spraying space d.
[0083] In addition, the spraying openings c can be regular shapes such as square, circular or oval, so as to facilitate processing. Alternatively, the spraying openings c can also be irregular shapes. The density of the spraying openings c on the side of the spraying part 212 away from the electrode part 211 can be selected as needed.
[0084] In some examples, the electrode part 211 includes a first part and a second part, the second part is located between the first part and the spraying part 212 along the first direction X, and the projection area of the second part is greater than the projection area of the first part when projected onto the same projection plane along the first direction X, so as to form a structure with a small upper part and a large lower part, and the spraying part 212 is connected to the second part.
[0085] In some examples, the distance between the electrode part 211 and the upper surface of the wafer 1 along the first direction X is in the range of 8-10 mm. In this way, it can be ensured that the process liquid flowing out of the second end of the channel b can form a continuous liquid flow after passing through the spraying part 212, so as to ensure the normal progress of the oxidation-reduction reaction.
[0086] Through the above arrangement, when the process liquid flows, the process liquid first passes through the channel b, in this process, the process liquid contacts the electrode component 211, because the negative electrode end of the power supply assembly 230 is at least electrically connected with the electrode component 211, so in the process that the process liquid contacts the electrode component 211, a reduction reaction will occur, then the process liquid will enter the spraying space d, and then flow out through the plurality of spray nozzles c to spray to the wafer 1, through the cooperation of the spraying space d and the plurality of spray nozzles c, it can be ensured that the process liquid flowing out of the spray nozzles c has higher pressure, so as to ensure that a stable and continuous liquid flow can be formed between the spray nozzles c and the wafer 1, thereby ensuring the stable progress of the oxidation-reduction reaction.
[0087] In some embodiments of the present application, the electrode assembly 210 has a channel b, and the second end of the channel b faces the wafer 1 along the first direction X, so that the process liquid flowing out of the second end of the channel b can flow through the wafer 1.
[0088] In some embodiments of the present application, as shown in Figure 2 , Figure 3 , Figure 4 The spraying component 212 includes a cooperation part 2121 and a distribution part 2122, the distribution part 2122 is arranged at one end of the electrode component 211 close to the wafer 1 along the first direction X and is spaced apart from the electrode component 211, the cooperation part 2121 is connected to the outer periphery of the second end of the channel b and is connected with the distribution part 2122 to form the spraying space d, and the plurality of spray nozzles c are located in the distribution part 2122.
[0089] In some examples, the electrode component 211 includes a first part and a second part, and the cooperation part 2121 is connected to the outer periphery of the second end of the channel b, because the projection area of the second part is larger than that of the first part when projected to the same projection plane along the first direction X, the cooperation part 2121 cooperating with the second part has a larger volume perpendicular to the first direction X, which can make the spraying space d formed by the cooperation part 2121 and the distribution part 2122 have a larger space perpendicular to the first direction X, so that more spray nozzles c can be arranged on the distribution part 2122.
[0090] Through the above arrangement, the cooperation part 2121 is responsible for connecting the distribution part 2122 and the electrode component 211, and cooperating with the distribution part 2122 to form the spraying space d with a notch, and the end of the second end of the channel b on the electrode component 211 extends into the spraying space d through the notch, so that the spraying space d and the second end of the channel b can be communicated, and the spraying component 212 with such structure improves the convenience of cooperating with the electrode component 211, and ensures the reliability and convenience of the structure.
[0091] In some embodiments of the present application, the spraying space d can also be a cavity formed inside the spraying component 212, and the second end of the channel b communicates with the spraying space d through a connecting pipe to deliver the process liquid into the spraying space d, and then to the aluminum needles 11 on the wafer 1 through the spraying openings c.
[0092] In some embodiments of the present application, as shown in Figure 2 , Figure 3 The distribution component 2122 includes a spraying area and a sealing area, and the spraying area is arranged opposite to the second end of the channel b along the first direction X, and the spraying openings c are located in the spraying area, and the sealing area surrounds the periphery of the spraying area; the electrode assembly 210 further includes a sealing component 212, which is arranged between the sealing area and the electrode component 211 along the first direction X and surrounds the spraying area.
[0093] The sealing component 212 can be a sealing ring, or the sealing component 212 can also include a plurality of sealing blocks arranged around the spraying area.
[0094] Through the above arrangement, the second end of the channel b can be opposite to the spraying area along the first direction X to deliver the process liquid to the spraying openings c, and since the sealing area surrounds the periphery of the spraying area, and the sealing component 212 is arranged between the sealing area and the electrode component 211 and surrounds the spraying area, the sealing component 212 can seal the periphery of the area where the spraying openings c and the second end of the channel b communicate, so as to prevent the process liquid between the second end of the channel b and the spraying openings c from leaking out of the gap between the assembly 2121 and the electrode component 211, to ensure that the spraying space d has sufficient pressure, to ensure the continuity and stability of the process liquid flowing out of the spraying openings c, and to ensure the removal efficiency of the aluminum needles 11 on the wafer 1.
[0095] In some embodiments of the present application, as shown in Figure 2 , Figure 3 The distance between the side of the spraying component 212 where the spraying openings c are located and the wafer 1 along the first direction X is in the range of 2mm-4mm.
[0096] The distance between the side of the spraying component 212 where the spraying openings c are located and the wafer 1 along the first direction X can be 2mm, 2.5mm, 3mm, 3.5mm or 4mm.
[0097] In some examples, the distance between the side of the spraying component 212 where the spraying openings c are located and the wafer 1 is 2mm, so that the fluid pressure of the process liquid sprayed out of the spraying openings c is not too large, and the process liquid can form a continuous and stable liquid flow between the wafer 1 and the spraying openings c.
[0098] In some examples, the distance between the side of the plurality of spray openings c on the spray component 212 and the wafer 1 is 4 mm. This not only ensures that a continuous and stable liquid flow can be formed between the spray openings c and the wafer 1, but also avoids the distance between the wafer 1 and the spray openings c being too close, facilitating the position setting of the wafer 1 and the electrode assembly 210.
[0099] Through the above setting, the distance between the side of the plurality of spray openings c on the spray component 212 and the wafer 1 along the first direction X is within a suitable range, which can ensure that a continuous liquid flow can be formed between the spray openings c and the wafer 1, ensure the continuous and stable progress of the redox reaction, and ensure the efficiency of removing the aluminum needle 11. The lower limit value of 2 mm can make the fluid pressure of the process liquid sprayed from the spray openings c not too large, so that a continuous and stable liquid flow can be formed between the wafer 1 and the spray openings c. The upper limit value of 4 mm not only ensures that a continuous and stable liquid flow can be formed between the spray openings c and the wafer 1, but also avoids the distance between the wafer 1 and the spray openings c being too close, facilitating the position setting of the wafer 1 and the electrode assembly 210.
[0100] In some embodiments of the present application, as shown in Figure 5 The liquid supply assembly 220 includes a liquid storage component 221, a pipeline 222, and a power component 223. The liquid storage component 221 is used to store the process liquid. The inlet end of the pipeline 222 is in communication with the inside of the liquid storage component 221, and the outlet end of the pipeline 222 is in communication with the first end of the channel b. The power component 223 is arranged in the pipeline 222 and is used to drive the process liquid to flow through the pipeline 222.
[0101] In some examples, the liquid storage component 221 has a first center line extending along the first direction X, and the electrode assembly 210 has a second center line extending along the first direction X. In a direction perpendicular to the first direction X, the first center line and the second center line have a first distance therebetween, and the second center line has a second distance from the side of the electrode assembly 210. The second distance is equal to 148 mm minus the first distance. This can ensure that the electrode assembly 210 and the liquid storage component 221 have a reasonable distance, taking into account the efficiency of liquid supply and the rationality of layout.
[0102] The power component 223 can be a centrifugal pump, a gear pump, or a piston pump, etc.
[0103] Through the above arrangement, the liquid storage component 221 is configured to store the process liquid, the pipeline 222 is configured to connect the liquid storage component 221 and the first end of the channel b, and the power component 223 is configured to drive, so that when the process liquid is supplied, the power component 223 is started, the power component 223 can suck the process liquid in the liquid storage component 221 into the pipeline 222, and the process liquid can enter the channel b after passing through the pipeline 222, and then flow to the wafer 1 through the channel b. Through the cooperation of the liquid storage component 221, the pipeline 222 and the power component 223, the automation, efficiency and convenience of the liquid supply are ensured.
[0104] In some embodiments of the present application, as shown in Figure 5 the liquid supply assembly 220 further comprises a valve 224, the valve 224 is arranged in the pipeline 222 and is configured to open or close the pipeline 222; the wafer processing device 200 further comprises a controller 240, the controller 240 is electrically connected with the valve 224 of the at least one electrode mechanism 202 and is electrically connected with the power supply assembly 230 of the at least one electrode mechanism 202, and the controller 240 is configured to control the power supply assembly 230 to supply power based on an opening signal of the valve 224.
[0105] It can be understood that the valve 224 can be opened to open the pipeline 222, and the valve 224 can be closed to close the pipeline 222.
[0106] In some examples, the number of electrode mechanisms 202 is two, so that the controller 240 can be electrically connected with the power supply assembly 230 and the valve 224 of the two electrode mechanisms 202 at the same time, so that the same controller 240 can be used to control the two electrode mechanisms 202, and the centralized management of the equipment can be facilitated.
[0107] The valve 224 can be a stop valve, a solenoid valve or a regulating valve, etc.
[0108] Through the above arrangement, the valve 224 is arranged on the pipeline 222, the valve 224 is opened to open the pipeline 222, and the valve 224 is closed to close the pipeline 222. Since the valve 224 is electrically connected with the controller 240, when the valve 224 is opened to open the pipeline 222, the opening signal of the valve 224 is also transmitted to the controller 240, and at this time the controller 240 controls the power supply assembly 230 to supply power based on the opening signal. That is, the power supply of the electrode assembly 210 and the start of the liquid supply are almost synchronous, so that the process liquid can be fully utilized to process the wafer, and the control precision is ensured.
[0109] In some embodiments of the present application, the number of electrode mechanisms 202 is two, and includes a first electrode mechanism and a second electrode mechanism, the liquid supply assembly 220 of the first electrode mechanism is used to supply process liquid including hydrofluoric acid solution, and the second electrode mechanism is used to supply process liquid including hydrogen peroxide, ammonia water and deionized water.
[0110] That is, the wafer 1 in the present application can be sequentially treated by hydrofluoric acid solution and hydrogen peroxide, ammonia water and deionized water solution, which can ensure the effect of removing the aluminum needle.
[0111] Through the above setting, the wafer processing device 200 in the present application is provided with two electrode mechanisms 202, which can use the two electrode mechanisms 202 to respectively perform process treatment of the wafer 1 by hydrofluoric acid solution and process treatment of the wafer 1 by hydrogen peroxide, ammonia water and deionized water mixed solution, so that the wafer processing device 200 can simultaneously use the hydrofluoric acid solution and the hydrogen peroxide, ammonia water and deionized water mixed solution, thereby improving the utilization rate of the solution.
[0112] In some embodiments of the present application, as shown in Figure 5 the positive terminal of the power supply assembly 230 and / or the wafer 1 is grounded.
[0113] That is, this embodiment includes three cases, the first case is that the positive terminal of the power supply assembly 230 is grounded. The second case is that the wafer 1 is grounded. The third case is that the positive terminal of the power supply assembly 230 and the wafer 1 are both grounded.
[0114] Through the above setting, during the power supply process of the power supply assembly 230, the positive terminal of the power supply assembly 230 and / or the wafer 1 is grounded, so that the metal ions formed on the wafer 1 can migrate to the grounded side, which can reduce the corrosion of the metal ions to the wafer 1, thereby ensuring the quality of the wafer 1.
[0115] The above is only an embodiment of the present application, and is not used to limit the protection scope of the present application. Any modification, equivalent replacement and improvement made within the spirit and scope of the present application shall be included in the protection scope of the present application.
Claims
1. A wafer processing apparatus, characterized in that, include: The body has a storage space for accommodating the wafer; At least one electrode mechanism includes an electrode assembly, a liquid supply assembly, and a power supply assembly. The electrode assembly is housed within the receiving space and is spaced apart on one side of the wafer along a first direction. The liquid supply assembly is disposed on the body and is used to supply process liquid between the electrode assembly and the wafer. The power supply assembly is disposed on the body, with its positive terminal electrically connected to the wafer and its negative terminal electrically connected to the electrode assembly. When powered by the power supply assembly, the process liquid forms a continuous liquid flow and simultaneously contacts the electrode assembly and the protruding aluminum pins on the wafer. A reduction reaction occurs at the electrode assembly, and an oxidation reaction occurs at the wafer.
2. The wafer processing apparatus according to claim 1, characterized in that, The process liquid includes a hydrofluoric acid solution; or, the process liquid includes hydrogen peroxide, ammonia, and deionized water.
3. The wafer processing apparatus according to claim 1 or 2, characterized in that, The electrode assembly has a channel inside, the first end of the channel is connected to the liquid supply assembly and is used to receive the process liquid from the liquid supply assembly. Along the first direction, the second end of the channel is located at the end of the electrode assembly closer to the wafer, and the process liquid flowing out from the second end of the channel can form a continuous liquid flow to flow through the wafer.
4. The wafer processing apparatus according to claim 3, characterized in that, The electrode assembly includes an electrode component and a spray component. Along the first direction, the spray component is connected to one end of the electrode component near the wafer. The channel is located on the electrode component, and the second end of the channel is located at one end of the electrode component near the wafer. The spray component has a spray space communicating with the second end of the channel. The side of the spray component away from the electrode component also has a plurality of spray nozzles communicating with the spray space. The spray nozzles face the wafer. The negative terminal of the power supply component is electrically connected to at least the electrode component.
5. The wafer processing apparatus according to claim 4, characterized in that, The spraying component includes a mating part and a distributing part. Along the first direction, the distributing part is located at one end of the electrode component near the wafer and is spaced apart from the electrode component. The mating part is connected to the outer periphery of the electrode component around the second end of the channel and is connected to the distributing part to form the spraying space. The plurality of spray nozzles are located in the distributing part.
6. The wafer processing apparatus according to claim 5, characterized in that, The distribution section includes a spray area and a sealing area. Along the first direction, the spray area is disposed opposite to the second end of the channel. The plurality of spray nozzles are located in the spray area, and the sealing area surrounds the outer periphery of the spray area. The electrode assembly also includes a sealing component. Along the first direction, the sealing component is sealed between the sealing area and the electrode component and is disposed around the spray area.
7. The wafer processing apparatus according to claim 4, characterized in that, Along the first direction, the distance between the side where the plurality of spray nozzles on the spraying component are located and the wafer is in the range of 2mm-4mm.
8. The wafer processing apparatus according to claim 3, characterized in that, The liquid supply assembly includes a liquid storage component, a pipeline, and a power component. The liquid storage component is used to store the process liquid. The inlet end of the pipeline is connected to the interior of the liquid storage component, and the outlet end of the pipeline is connected to the first end of the channel. The power component is located in the pipeline and is used to drive the process liquid to flow through the pipeline.
9. The wafer processing apparatus according to claim 8, characterized in that, The liquid supply assembly further includes a valve located in the pipeline and used to open or close the pipeline; the wafer processing apparatus further includes a controller electrically connected to a valve of at least one of the electrode mechanisms and electrically connected to a power supply assembly of at least one of the electrode mechanisms, the controller being configured to control the power supply assembly to supply power based on the opening signal of the valve.
10. The wafer processing apparatus according to claim 1 or 2, characterized in that, The number of electrode mechanisms is two, including a first electrode mechanism and a second electrode mechanism. The liquid supply component of the first electrode mechanism is used to supply the process liquid, which includes hydrofluoric acid solution. The process liquid supplied by the second electrode mechanism includes hydrogen peroxide, ammonia, and deionized water.
11. A semiconductor processing apparatus, characterized in that, include: A wafer testing apparatus, comprising a probe for contacting pads on a wafer to detect the electrical properties of the wafer; The wafer processing apparatus according to any one of claims 1-10, wherein the inspected wafer is housed within the housing space of the wafer processing apparatus.