Substrate processing apparatus and substrate processing system

Abstract

A substrate processing apparatus for processing a substrate is provided with a processing chamber and a support member which is disposed in the processing chamber and has, on the upper surface thereof, a tray support surface for supporting a tray in which a recess for accommodating the substrate via a first heat transfer material is formed. The tray support surface is configured so that a second heat transfer material is sandwiched between the tray support surface and the lower surface side of the tray.

Description

Technical Field

[0001] This disclosure relates to substrate processing apparatus and substrate processing system. Background Technology

[0002] Patent Document 1 discloses a substrate processing system in which a wafer to be processed and an edge ring arranged in a manner surrounding the wafer are electrostatically adsorbed onto a tray having a disk shape, and the processing module is transported in this state. Furthermore, in the substrate processing system described in Patent Document 1, the wafer and edge ring are placed on a base within the processing module via the tray, and plasma processing such as etching is performed in this state.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-34390 Summary of the Invention

[0006] The technology disclosed herein appropriately improves the in-plane temperature uniformity of the substrate during substrate processing.

[0007] One aspect of this disclosure is a substrate processing apparatus for processing a substrate, comprising a processing chamber and a support member disposed within the processing chamber and having a tray support surface thereon, wherein the tray has a recess thereon for receiving the substrate via a first heat transfer material, and the tray support surface is configured to have a second heat transfer material sandwiched between it and the underside of the tray.

[0008] Invention Effects

[0009] According to this disclosure, the in-plane temperature uniformity of the substrate can be appropriately improved during substrate processing. Attached Figure Description

[0010] Figure 1 This is a top view schematically illustrating an example of the structure of a wafer processing system.

[0011] Figure 2 This is a cross-sectional view schematically illustrating an example of the structure of a wafer processing module.

[0012] Figure 3 It is a diagram illustrating the wafer processing flow in a wafer processing system.

[0013] Figure 4 This is a cross-sectional view schematically showing an example of the structure of the tray involved in this embodiment.

[0014] Figure 5 This is a cross-sectional schematic diagram illustrating the spacer installed on the tray.

[0015] Figure 6 This is a cross-sectional schematic diagram illustrating other methods of mounting wafers on a tray.

[0016] Figure 7 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0017] Figure 8 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0018] Figure 9 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0019] Figure 10 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0020] Figure 11 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0021] Figure 12 This is a cross-sectional view schematically illustrating an example of a method for supplying liquid heat transfer material to a tray.

[0022] Figure 13 This is a timing diagram illustrating the process of supplying liquid heat transfer material to a tray.

[0023] Figure 14 This is a cross-sectional view schematically illustrating an example of a method for supplying liquid heat transfer material to a tray.

[0024] Figure 15 This is a diagram illustrating the wafer processing flow when using liquid heat transfer materials.

[0025] Figure 16 This is a diagram illustrating the wafer processing flow when using sheet heat transfer materials.

[0026] Figure 17 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0027] Figure 18 This is an illustrative diagram showing an example of a method for mounting / separating wafers on a tray.

[0028] Figure 19 This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0029] Figure 20 This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0030] Figure 21 This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0031] Figure 22 This is an illustrative diagram showing an example of a method for separating a wafer from a tray.

[0032] Figure 23 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0033] Figure 24 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0034] Figure 25 This is a cross-sectional view schematically illustrating other structural examples of the tray.

[0035] Figure 26 This is an explanatory diagram showing an example of a pallet transport method.

[0036] Figure 27 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0037] Figure 28 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0038] Figure 29 This is an explanatory diagram showing an example of control using the sheath of an electrostatic chuck.

[0039] Figure 30 This is an explanatory diagram showing an example of control using the sheath of an electrostatic chuck.

[0040] Figure 31 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0041] Figure 32 This is a perspective view showing a structural example of a locking mechanism for securing a tray to a support component.

[0042] Figure 33 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0043] Figure 34 This is a cross-sectional view schematically illustrating an example of a method for securing a tray to a support component.

[0044] Figure 35 This is a cross-sectional view schematically illustrating an example of a method for detaching a pallet from a support member.

[0045] Figure 36 This is a cross-sectional view schematically showing other structural examples of the support components.

[0046] Figure 37 This is a top view schematically illustrating other structural examples of the supporting components.

[0047] Figure 38This is a schematic cross-sectional view illustrating a structural example of a cleaning tray.

[0048] Figure 39 This is a top view schematically illustrating an example of the structure of a cleaning tray.

[0049] Figure 40 This is a top view schematically illustrating an example of the structure of a cleaning tray.

[0050] Explanation of reference numerals in the attached figures

[0051] 7: Wafer processing module;

[0052] 10: Plasma processing chamber;

[0053] 11: Supporting components;

[0054] 103: concave part;

[0055] 104: Primary heat transfer material;

[0056] 105: Second heat transfer material;

[0057] T: tray;

[0058] Tw: (a tray containing a wafer)

[0059] W: Wafer. Detailed Implementation

[0060] In the manufacturing process of semiconductor devices, various plasma treatments are performed on semiconductor substrates (hereinafter sometimes referred to as "wafers"), such as etching, film deposition, and diffusion. In these plasma treatments, it is important to maintain the wafer temperature in a uniform manner during the process in order to achieve in-plane uniform processing results.

[0061] In a substrate processing system, where the wafer and edge ring of the substrate being processed are held in a disk-shaped tray and transported to a processing module for plasma processing in this state, it is necessary to, for example, suppress the contact points of the lifting pins that connect the tray to the base or to the outer periphery of the wafer that is not in direct contact with the base.

[0062] The technology disclosed herein was developed in view of the above circumstances, and appropriately improves the in-plane temperature uniformity of the substrate during substrate processing. Hereinafter, a wafer processing system equipped with the wafer processing module according to this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, elements having substantially the same functional structure are omitted from repeated description by using the same reference numerals.

[0063] <Wafer Processing System>

[0064] Figure 1This is a schematic top view showing the structural outline of the wafer processing system 1.

[0065] In wafer processing system 1, various processes are performed on a wafer W, which serves as a substrate. Wafer W is an example of a substrate. Wafer W is, for example, a semiconductor wafer such as a semiconductor substrate, and in one embodiment, a device layer (not shown) containing multiple devices is formed on its surface. In the wafer processing system 1 according to this embodiment, the wafer W to be processed is transported and processed in a state where it is placed on a tray T described later (see reference...). Figure 2 The wafer W is mounted on the tray T with the surface where the device layer is formed facing upwards. Hereinafter, for the sake of simplicity, the tray T, which holds the transported and processed wafer W in the wafer processing system 1, will sometimes be referred to as "tray Tw". The detailed structure of the tray T will be described later.

[0066] Furthermore, in the following embodiments, as described above, the case in which a device layer is formed on the surface of wafer W will be used as an example, but wafer W is not necessarily a device wafer with a device layer formed thereon.

[0067] like Figure 1 As shown, the wafer processing system 1 has an integrated structure consisting of an atmospheric transport module 2 and a vacuum transport module 3 connected via a load locking module 4. The atmospheric transport module 2 transports the tray Tw in an atmospheric environment. The vacuum transport module 3 transports the tray Tw in a vacuum (reduced pressure) environment.

[0068] The load locking module 4 has one or more load locking chambers 4a, and in this embodiment, for example, it has two load locking chambers 4a. The load locking chambers 4a are configured to communicate with the internal space of the atmospheric delivery module 2 and the internal space of the vacuum delivery module 3 via a delivery port. The delivery port is configured to be freely openable via a gate valve 4b.

[0069] The load locking module 4 is configured to temporarily hold the tray Tw. Furthermore, the load locking module 4 is configured to switch the internal environment between atmospheric and depressurized (vacuum) environments. That is, the load locking module 4 is configured to appropriately transfer the tray Tw between the atmospheric transport module 2 in an atmospheric environment and the vacuum transport module 3 in a depressurized environment.

[0070] The atmospheric conveying module 2 consists of a rectangular frame, the interior of which is maintained in the atmospheric environment. On one side of the long side of the atmospheric conveying module 2 along the negative Y-axis, multiple, for example, three, loading ports 5 are connected in parallel. On the other side of the long side of the atmospheric conveying module 2 along the positive Y-axis, the aforementioned two load locking chambers 4a are connected in parallel. Additionally, the atmospheric conveying module 2 can also be connected to an orientation module (not shown) for adjusting the horizontal orientation of the trays Tw, or a storage module (not shown) for storing multiple trays Tw.

[0071] A front-opening wafer transfer box F capable of holding multiple trays Tw is mounted at loading port 5. Above the wafer processing system 1, a top conveyor mechanism (OHT: not shown) is provided that moves freely along a track configured on the top surface of the cleanroom where the wafer processing system 1 is located. The front-opening wafer transfer box F approaches the wafer processing system 1 via this top conveyor mechanism and is handed over at loading port 5.

[0072] Additionally, a first conveying mechanism 6 for the conveying tray Tw is provided inside the atmospheric conveying module 2. The first conveying mechanism 6 is configured to convey the tray Tw between the front-opening wafer transfer box F of the loading port 5 and the loading locking chamber 4a of the loading locking module 4. Furthermore, the structure of the first conveying mechanism 6 is not particularly limited.

[0073] The vacuum transport module 3 is constructed of a planar rectangular frame, the interior of which is maintained in a vacuum (reduced pressure) environment. Multiple, for example, four, wafer processing modules 7 are connected to the side of the vacuum transport module 3. The internal space of the wafer processing modules 7 communicates with the internal space of the vacuum transport module 3 via a transport port. The transport port is configured to be freely openable and closed via a gate valve 7a. Furthermore, the number or configuration of the wafer processing modules 7 is not limited to this embodiment and can be arbitrarily set.

[0074] Additionally, a second conveying mechanism 8 for the conveying tray Tw is provided inside the vacuum conveying module 3. The second conveying mechanism 8 is configured to convey the tray Tw between the loading locking chamber 4a of the loading locking module 4 and one or more wafer processing modules 7. Furthermore, the structure of the second conveying mechanism 8 is not particularly limited.

[0075] In one example, the wafer processing module 7, which serves as a substrate processing device, performs plasma processing such as etching on the wafer W placed on the tray T. Figure 2 This diagram is used as an example to illustrate a plasma processing device in which the wafer processing module 7 is a capacitively coupled type.

[0076] The wafer processing module 7, as a capacitively coupled plasma processing apparatus, includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Additionally, the wafer processing module 7 includes a support member 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a nozzle 15. The support member 11 is disposed within the plasma processing chamber 10. The nozzle 15 is disposed above the support member 11. In one embodiment, the nozzle 15 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the nozzle 15, the sidewall 10a of the plasma processing chamber 10, and the support member 11. The plasma processing chamber 10 is grounded. The nozzle 15 and the support member 11 are electrically insulated from the frame of the plasma processing chamber 10.

[0077] The support component 11 includes a base 12, an electrostatic chuck 13, and a lift 14. The base 12 includes a conductive component. The conductive component of the base 12 can function as a lower electrode. The electrostatic chuck 13 is disposed on the base 12. The electrostatic chuck 13 includes a ceramic component 13a and an electrostatic electrode 13b disposed within the ceramic component 13a. The ceramic component 13a is made of a dielectric and has a tray support surface for supporting the tray Tw. In one embodiment, the diameter of the tray support surface of the ceramic component 13a is larger than the diameter of the wafer W placed on the tray T, and the diameter is smaller than the diameter of the tray T or the size is approximately the same as the size of the tray T.

[0078] Additionally, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 (described later) can be disposed within the ceramic component 13a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal (described later) are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Furthermore, the conductive components of the base 12 and the at least one RF / DC electrode can also function as multiple lower electrodes. Additionally, the electrostatic electrode 13b can also function as a lower electrode. Therefore, the support member 11 includes at least one lower electrode.

[0079] The lifting platform 14 has multiple lifting pins 14a (three in this embodiment) and an actuator 14b serving as a drive mechanism for moving the lifting pins 14a longitudinally. Multiple through holes 12h and 13h (three in this embodiment) are formed in the base 12 and the electrostatic chuck 13, respectively, extending along the thickness direction. The lifting pins 14a of the lifting platform 14 are inserted into these through holes 12h and 13h. An example of the actuator 14b includes an electric actuator, a cylinder, an electric motor, etc.

[0080] Furthermore, the elevator 14 moves the lifting pin 14a axially (longitudinally) via the actuator 14b, lifting the tray Tw on the electrostatic chuck 13. This causes the tray Tw to move between the handover height with the second conveying mechanism 8 and the processing height for wafer processing on the electrostatic chuck 13.

[0081] Additionally, the support member 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 13, the tray T, and the wafer W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 12a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 12a. In one embodiment, the flow path 12a is formed within the base 12, and one or more heaters are disposed within the ceramic component 13a of the electrostatic chuck 13. Furthermore, the support member 11 may also include a gas supply section configured to supply gas (e.g., nitrogen (N2)) to the gap between the back surface of the tray T and the tray support surface of the electrostatic chuck 13. This gas supply section may also be shared with the gas supply section 20 described later.

[0082] The nozzle 15 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The nozzle 15 has at least one gas supply port 15a, at least one gas diffusion chamber 15b, and a plurality of gas inlets 15c. The process gas supplied to the gas supply port 15a is introduced into the plasma processing space 10s through the gas diffusion chamber 15b and the plurality of gas inlets 15c. Additionally, the nozzle 15 includes at least one upper electrode. Furthermore, in addition to the nozzle 15, the gas inlet unit may also include one or more side gas injectors (SGIs) mounted on one or more openings formed in the sidewall 10a.

[0083] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from each corresponding gas source 21 to the nozzle 15 via each corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsedizing the flow rate of the at least one processing gas.

[0084] The power supply 30 includes a radio frequency (RF) power supply 31, which is coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to provide at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Plasma is thus formed by at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a portion of the plasma generation section 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the wafer W, enabling the introduction of ionic components from the formed plasma into the wafer W.

[0085] In one embodiment, the radio frequency (RF) power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to be coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0086] The second radio frequency (RF) generation unit 31b is configured to couple to at least one lower electrode via at least one impedance matching circuit to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0087] Furthermore, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is configured to be connected to at least one lower electrode to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is configured to be connected to at least one upper electrode to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0088] In various embodiments, the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses in one cycle. Additionally, the first and second DC generation units 32a and 32b can be configured based on the RF power supply 31, and the first DC generation unit 32a can also be configured instead of the second RF generation unit 31b.

[0089] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0090] The wafer processing module 7 is configured as described above in one example, but the structure of the wafer processing module 7 is not limited to this.

[0091] For example, in Figure 2The example shown illustrates the case of capacitively coupled plasma (CCP) generated by the plasma generation unit of wafer processing module 7. However, the plasma generated by the plasma generator can be inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-Resonance Plasma), Helicon Wave Plasma (HWP), or Surface Wave Plasma (SWP), etc. Furthermore, various types of plasma generation units, including alternating current (AC) and direct current (DC) plasma generation units, can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0092] return Figure 1 Explanation.

[0093] like Figure 1As shown, a control unit 9 is provided in the wafer processing system 1 described above. The control unit 9 processes computer-executable instructions that cause the wafer processing system 1 to execute the various processes described herein. The control unit 9 may be configured to control the various elements of the wafer processing system 1 to execute the various processes described herein. In one embodiment, part or all of the control unit 9 may be included in the wafer processing system 1. The control unit 9 may also include a processing unit 9a1, a storage unit 9a2, and a communication interface 9a3. The control unit 9 is implemented, for example, by a computer 9a. The processing unit 9a1 may be configured to perform various control operations by reading a program from the storage unit 9a2 and executing the read program. The program may be pre-stored in the storage unit 9a2 or obtained via a medium when needed. The obtained program is stored in the storage unit 9a2 and read and executed by the processing unit 9a1 from the storage unit 9a2. The medium may be various storage media readable by the computer 9a and may be a communication loop connected to the communication interface 9a3. The processing unit 9a1 may be a CPU (Central Processing Unit). The storage unit 9a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 9a3 may also communicate with the wafer processing system 1 via a communication loop such as a LAN (Local Area Network). Furthermore, the aforementioned storage medium may be temporary or non-temporary.

[0094] <Processing flow in a wafer processing system>

[0095] Next, the wafer processing performed using the wafer processing system 1 configured as described above will be explained along the transport flow of the tray Tw. Figure 3 This diagram illustrates the main processes involved in wafer processing. Furthermore, as described above, the following explanation uses the case where wafer W is a device wafer with a device layer formed on its surface as an example; however, it is also possible to have no device layer formed on wafer W.

[0096] First, before conveying the front-opening wafer transfer box F to the wafer processing system 1, the wafer W to be processed is mounted on a tray T in a mounting device (not shown) disposed externally to the wafer processing system 1. The tray Tw (which is prepared to mount the wafer W) Figure 3 Step S1). At this time, the wafer W is mounted on the tray T with the surface where the device layer is formed facing upwards. The tray Tw containing the wafer W is stored in the front-opening wafer transfer box F. Figure 3 Step S2). In the front-opening wafer transfer box F, the tray Tw is stored with the wafer support side of the wafer W facing upwards.

[0097] Next, the front-opening wafer transfer box F, containing multiple trays Tw, is transported by a top transport mechanism (OHT) (not shown) and mounted on the loading port 5 of the wafer processing system 1. Figure 3 Step S3). Next, the tray Tw is taken out from the front-opening wafer transfer box F by the first conveying mechanism 6, and conveyed to a wafer processing module 7 via the loading locking chamber 4a of the loading locking module 4 and the second conveying mechanism 8. In the wafer processing module 7, the back side of the tray Tw carrying the wafer W (the side opposite to the wafer support surface on which the wafer W is placed) is held by the electrostatic chuck 13 of the support member 11. Figure 3 Step S4). In addition, as will be described later, if the wafer W can be sufficiently cooled by the weight of the tray Tw making full contact with the support member 11, the electrostatic adsorption of the electrostatic chuck 13 is not required.

[0098] In wafer processing module 7, any processing corresponding to the purpose of wafer processing, such as plasma processing like etching, is performed. Figure 3 Step S5).

[0099] Specifically, for example, after the wafer W is loaded, the interior of the plasma processing chamber 10 is depressurized to the desired vacuum level, and the desired processing gas is supplied to the plasma processing space 10s. Then, at least one radio frequency signal (radio frequency power) is supplied by the radio frequency power supply 31 to at least one lower electrode and / or at least one upper electrode to excite the processing gas to generate plasma. Then, plasma processing is performed on the wafer W by the action of the plasma thus generated. At this time, the plasma processing of the wafer W is performed while the wafer W is placed on the tray T.

[0100] When the desired wafer processing is performed on wafer W, the tray Tw is then removed from the wafer processing module 7 via the second transport mechanism 8. The tray Tw removed from the wafer processing module 7 is then returned to the front-opening wafer transfer box F via the load locking chamber 4a of the load locking module 4 and the first transport mechanism 6. Figure 3 Step S6).

[0101] Next, a top transport mechanism (OHT), not shown, removes a front-opening wafer transfer box F containing the processed wafer W from wafer processing system 1. Figure 3 Step S7).

[0102] Then, using a separation device (not shown) located outside the wafer processing system 1, the tray T and the wafer W are separated. Figure 3 (Step S8). Thus, the series of wafer processing using wafer processing system 1 is completed.

[0103] According to this embodiment, as described above, with the wafer W to be processed mounted on the tray T, the wafer processing system 1 is transported and the wafer processing module 7 is processed sequentially.

[0104] Additionally, in the above explanation, such as Figure 3 As shown, the example described is the case where wafers W are pre-loaded onto tray T outside the wafer processing system 1, or in other words, tray Tw is moved into the wafer processing system 1. However, loading wafers W onto tray T does not necessarily have to be done outside the wafer processing system 1; it can also be done inside the wafer processing system 1. In this case, front-opening wafer transfer boxes F containing multiple trays T and front-opening wafer transfer boxes F containing multiple wafers W are moved into the wafer processing system 1, for example, in a loading device (not shown) / separation device (not shown) connected to the atmospheric transport module 2, and the loading / separation of wafers W relative to tray T is performed. Alternatively, the loading device and separation device can be configured independently, and the loading / separation of wafers W relative to tray T can be performed in different devices, or the loading device and separation device can be integrated into one device, and the loading / separation of wafers W relative to tray T can be performed in the same device.

[0105] <Detailed Construction of the Pallet>

[0106] Next, the detailed structure of the tray T that carries the wafer W will be explained. Figure 4 This is a schematic cross-sectional view illustrating an example of the structure of the tray T, showing its configuration above the support member 11 of the wafer processing module 7. Additionally, in Figure 4 In order to simplify the illustration, the through holes 12h and 13h are omitted.

[0107] like Figure 4 As shown, the tray T has a generally circular shape and, in a cross-sectional view, a concave cross-section in which the thickness of the central portion is smaller than the thickness of the outer peripheral portion. Hereinafter, for convenience, the central portion of the tray T with the smaller thickness in the cross-sectional view will be referred to as the "circular plate portion 101," and the outer peripheral portion of the tray T with the larger thickness in the cross-sectional view will be referred to as the "annular portion 102." Additionally, the concave cross-section formed by the circular plate portion 101 and the annular portion 102 is sometimes referred to as the "recess 103." Furthermore, the tray T has a first heat transfer material 104 disposed between the wafer W and the upper surface of the circular plate portion 101 when the wafer W is housed, and a second heat transfer material 105 disposed between the tray mounting surface of the electrostatic chuck 13 and the lower surface of the circular plate portion 101 when the wafer W is placed on the tray mounting surface of the electrostatic chuck 13.

[0108] The circular plate portion 101 is made of at least one material selected from Si, SiC, SiN, C, SiO2, Al2O3, Y2O3, YOF, W, Ti, TiN, ZeO2, and green sheet. Therefore, the circular plate portion 101 can be made of a conductive material or an insulating material. Furthermore, the relative permittivity of the circular plate portion 101 can be 8.0 or less. Additionally, the volume resistivity of the circular plate portion 101 can be, for example, 1 × 10e12 [Ω·cm] or less when the electrostatic chuck 13 is of the Johnson-Rahbek type, and 1 × 10e13 [Ω·cm] or more when it is of the coulomb type.

[0109] The diameter r1 of the circular plate portion 101 is slightly larger than the diameter r3 of the wafer W, allowing the wafer W to be housed internally. Therefore, the circular plate portion 101 of the tray T has a wafer mounting surface for supporting the wafer W, and the tray T has a recess 103 for housing the wafer W. When the wafer W is mounted on the wafer mounting surface, the gap G (the difference between diameter r1 and diameter r3) generated between the outer end of the wafer W and the inner circumferential surface of the annular portion 102 is preferably 0.1 mm or less. Furthermore, to effectively cool the wafer W (described later), the diameter r1 of the circular plate portion 101 is preferably less than or equal to the diameter r4 of the support member 11 (electrostatic chuck 13) holding the tray Tw in the wafer processing module 7.

[0110] In addition, the thickness t1 of the circular plate portion 101 is not particularly limited, but it is preferably set to a thickness that can effectively cool the wafer W as described later and ensure the mechanical strength of the tray T.

[0111] The annular portion 102 is made of at least one material selected from Si, SiC, SiN, C, SiO2, Al2O3, Y2O3, YOF, W, Ti, TiN, ZeO2, and green ceramic sheets. It can be made of the same material as the circular plate portion 101 or a different material. Therefore, the annular portion 102 can be made of a conductive material or an insulating material. However, as described later, when the annular portion 102 is used as an edge ring during plasma processing, it can also be made of the same material as conventional edge rings. Furthermore, the relative permittivity or volume resistivity of the annular portion 102 is preferably the same as that of the wafer W.

[0112] The thickness t2 of the annular portion 102 can be appropriately varied depending on the purpose of wafer processing. Therefore, the height of the upper surface of the annular portion 102 can be higher, lower, or the same as the height of the upper surface of the wafer W. In one example, the thickness t2 of the annular portion 102 is 3 mm to 5 mm. Furthermore, when the wafer processing module 7 performs plasma processing, the annular portion 102, arranged to surround the wafer W held on the circular plate portion 101, also functions as an edge ring (also called a focusing ring) to reduce the non-uniformity of the plasma processing. Therefore, the thickness t2 and width r2 of the annular portion 102 can also be configured to be approximately the same as the thickness and width of an edge ring (not shown) used in conventional plasma processing.

[0113] The overall diameter of the tray T (i.e., the outer diameter of the annular portion 102, diameter r1 + width r2) can also be larger than or equal to the diameter r4 of the support member 11 (electrostatic chuck 13) that holds the tray Tw in the wafer processing module 7 (diameter r1 + width r2 ≥ diameter r4). In this case, by increasing the size of the tray T compared to the support member 11, the surface of the support member 11 (electrostatic chuck 13) can be prevented from being exposed to plasma during plasma processing in the wafer processing module 7. Therefore, the consumption of the support member 11 can be reduced, and the time or frequency required for maintenance of the wafer processing module 7 can be reduced.

[0114] Furthermore, as described above, a gap G is formed between the outer end of the wafer W and the inner circumferential surface of the annular portion 102. During plasma processing in the wafer processing module 7, the corner of the recess 103 in this gap G formation area is sometimes exposed to plasma. In this case, wear is easily generated at the corner due to the material of the tray T, which may lead to a reduction in the lifespan of the tray T or particle generation. Moreover, this wear at the corner is more likely to occur when the corner is a right angle.

[0115] Therefore, in order to suppress the consumption at the corners of the recess 103, the shape of the corners can be made non-right angles, instead filling the space between the wafer W and the tray T. Specifically, for example... Figure 5 As shown, a rounded-corner spacer 106 is preferably provided at the corner 103a of the recess 103. Alternatively, although not shown in the figure, a spacer with a shape consistent with the outer end of the wafer W can be provided instead of a rounded-corner shape. In this case, the spacer 106 is composed of at least a plasma-resistant component. By providing the spacer 106 at the corner 103a in this way, exposure of the corner 103a to plasma can be suppressed during plasma processing in the wafer processing module 7, thereby suppressing a decrease in the lifespan of the tray T or particle generation.

[0116] Additionally, for the spacer 106 disposed at the corner 103a, instead of... Figure 5The portion shown is separate from the tray T (circular plate portion 101 and circular ring portion 102). Although the illustration is omitted, it can also be integrally formed with at least one of the circular plate portion 101 or the circular ring portion 102.

[0117] In addition, Figure 4 and Figure 5 In the example shown, the wafer W is held on the circular plate portion 101 of the tray T, but as Figure 6 As shown, a stepped portion 107 for holding the outer periphery of the wafer W can also be provided in the annular portion 102, and the wafer W can be held on the stepped portion 107. Alternatively, the wafer W can be held instead of the stepped portion 107. Figure 5 The spacer 106 shown. In other words, the spacer 106 has a rectangular shape in cross-section, and may also form a stepped portion 107 for holding the outer periphery of the wafer W.

[0118] In this case, a gap is created between the back side of the wafer W and the circular plate portion 101 of the tray T. By filling the gap with the first heat transfer material 104 (described later), the wafer W can be cooled appropriately as described later.

[0119] In addition, Figure 4 The illustration shows an example where the circular plate portion 101 and the ring portion 102 of the tray T are integrally constructed using the same material, but the structure of the tray T is not limited to this.

[0120] Specifically, for example Figure 4 As shown, instead of making the circular plate portion 101 and the annular portion 102 a single unit, the circular plate portion 101 and the annular portion 102 can also be separately constructed and then joined together to form the tray T. In this case, the circular plate portion 101 and the annular portion 102 can be bonded, for example, using adhesive sheets or adhesives, or mechanically or chemically joined. Furthermore, the circular plate portion 101 and the annular portion 102 can be as follows... Figure 7 The figures shown are made of different materials, but although the illustrations are omitted, they could also be made of the same materials.

[0121] In addition, Figure 4 and Figure 7 In the illustration, the circular plate portion 101 is surrounded by the annular portion 102; in other words, the diameter r1 of the circular plate portion 101 is the same as the inner diameter of the annular portion 102. However, as... Figure 8As shown, the tray T can also be configured such that the diameter r1 of the circular plate portion 101 is the same as the outer diameter of the annular portion 102, with the annular portion 102 disposed on the top of the circular plate portion 101. In this case, the circular plate portion 101 has a mounting surface (ring mounting surface) on its surface for the annular portion 102, which serves as an edge ring. Furthermore, although the illustration is omitted, even in this case, the circular plate portion 101 and the annular portion 102 can be made of the same material. Additionally, in this case, a conventional edge ring can be used as the annular portion 102.

[0122] In addition, Figure 4 , Figure 7 and Figure 8 In this process, the circular plate portion 101 and the annular portion 102 are each composed of a single component, but at least one of the circular plate portion 101 and the annular portion 102 is as follows: Figure 9 As shown, it can also be constructed by stacking two or more components. In this case, as... Figure 9 As shown, the multiple stacked components can be made of different materials, although the illustration is omitted, they can also be made of the same material.

[0123] Furthermore, in Figure 4 and Figures 7-9 The illustration shows an example where a recess 103 is formed on the upper side (wafer mounting surface) of the tray T, but this can be substituted or modified as follows: Figure 10 and Figure 11 As shown, a recess 108 is further formed on the underside of the tray T. In this case, as... Figure 11 As shown, the recess 108 formed on the underside of the tray T preferably has a shape that fits into the tray support surface of the electrostatic chuck 13.

[0124] like Figure 4 As shown, a first heat transfer material 104 is disposed between the wafer W and the wafer mounting surface of the tray T. Therefore, the first heat transfer material 104 is disposed in the recess 103 of the tray T. As the first heat transfer material 104, a liquid heat transfer material or a heat transfer sheet can be used, as described later. The wafer W mounted on the tray T makes thermal contact with the entire surface of the tray T via the first heat transfer material 104, thereby improving the cooling efficiency of the wafer W through the heat transfer fluid flowing through the flow path 12a formed on the substrate 12.

[0125] More specifically, in existing plasma processing apparatuses, to suppress the surface of the electrostatic chuck from being exposed to plasma and thus consumed, the wafer-carrying surface of the electrostatic chuck is typically made smaller than the wafer being held (wafer diameter > electrostatic chuck outer diameter). However, in this case, the outer periphery of the wafer is not directly held by the electrostatic chuck, and as a result, the cooling of the outer periphery may become insufficient compared to the center of the wafer.

[0126] In addition, for example, when the wafer W is deformed due to warping, it is difficult to make the electrostatic chuck make uniform solid contact with the entire surface of the wafer. As a result, the pressure on the electrostatic chuck is weakened in a part of the wafer surface (the part that is warped upwards), and the part of the wafer surface may become insufficiently cooled.

[0127] In this respect, as the technology involved in this embodiment is described, by housing the wafer W inside the recess 103 of the tray T and then providing a first heat transfer material 104 between the wafer W and the circular plate portion 101 of the tray T, the wafer W and the tray T can easily make full-surface contact through the first heat transfer material 104, and the entire surface of the wafer W can be cooled uniformly.

[0128] As the first heat transfer material 104, one example can be a liquid heat transfer material or a sheet heat transfer material. However, as long as the wafer W and the tray T can make proper full-surface contact and improve the heat transfer efficiency between the wafer W and the tray T, a gas can also be used as the first heat transfer material 104. Details regarding liquid heat transfer materials and sheet heat transfer materials will be described later.

[0129] like Figure 4 As shown, a second heat transfer material 105 is disposed between the tray T and the tray mounting surface of the electrostatic chuck 13. As described later, the second heat transfer material 105 can be a liquid heat transfer material or a heat transfer sheet. The second heat transfer material 105 can be the same material as the first heat transfer material 104, or a different material can be used. The tray T, held in the electrostatic chuck 13, is in full thermal contact with the entire surface of the electrostatic chuck 13 via this second heat transfer material 105. This improves the cooling efficiency of the tray T through the heat transfer fluid flowing through the flow path 12a formed on the substrate 12, thereby improving the cooling efficiency of the wafer W mounted on the tray T.

[0130] More specifically, in existing plasma processing devices, in order to adequately cool the wafer on the electrostatic chuck, it is necessary to increase the pressure of the wafer on the wafer mounting surface of the electrostatic chuck through electrostatic force, and to properly maintain solid contact between the electrostatic chuck and the wafer.

[0131] In this respect, as the technology involved in this embodiment is described, by providing a second heat transfer material 105 between the tray T and the tray support surface of the electrostatic chuck 13, the tray T and the electrostatic chuck 13 can easily make thermal contact through the second heat transfer material 105 without applying stress such as electrostatic adsorption. The full cooling effect of the wafer W can be expected through the weight of the tray Tw itself.

[0132] Furthermore, by sandwiching the second heat transfer material 105 in this way, the wafer W can be cooled by the weight of the tray Tw itself. However, the tray T can also be held on the electrostatic chuck 13 by electrostatic adsorption or the like. In this case, the pressing force of the tray T on the electrostatic chuck 13 is increased, which can further improve the cooling efficiency of the wafer W.

[0133] As an example, the tray T involved in this embodiment is configured as described above. According to this embodiment, as described above, the annular portion 102, which functions as an existing edge ring, is transported together with the wafer W. In other words, during the monolithic processing of the wafer processing module 7, the edge ring (annular portion 102) and the wafer W are integrated and removed from the wafer processing module 7. Therefore, even if the edge ring (annular portion 102) is consumed due to plasma processing, it is not necessary to stop the operation of the wafer processing module 7 used for edge ring exchange as in the past; the annular portion 102 removed from the wafer processing module 7 for monolithic processing can be directly replaced outside the wafer processing module 7. Therefore, the operating time of the wafer processing module 7 can be maximized.

[0134] Furthermore, since the edge ring (circular portion 102) is replaced in a single-wafer process, the consumption of the edge ring caused by continuous wafer processing in the wafer processing module 7 is suppressed. As a result, the impact of edge ring consumption on the processing results is suppressed.

[0135] Furthermore, the tray T consumed through plasma processing can be additively regenerated only in its consumed portion after being removed from the wafer processing module 7, and then remounted on the wafer W and transported back to the wafer processing module 7. For example, the consumed portion can be additively regenerated through thermal spraying, or through CVD, PVD, sol-gel, or lamination molding technology (3D printing technology).

[0136] Alternatively, the tray T can be coarsely sorted and surface-blasted to classify it according to each constituent material, and then reused as a new processed product different from the tray T. Furthermore, the Si powder obtained through sorting can be granulated and used for additive regeneration of the consumed portion of the tray T.

[0137] <Liquid heat transfer materials>

[0138] Next, the liquid heat transfer materials used as the first heat transfer material 104 and / or the second heat transfer material will be described in detail.

[0139] When using a liquid heat transfer material as the first heat transfer material 104 and / or the second heat transfer material 105, the liquid heat transfer material should be selected as a material that does not volatilize under vacuum (reduced pressure) and has high heat transfer properties. An example of a liquid heat transfer material is a low vapor pressure liquid, which can be selected from any one of ionic liquids, silicone oils (silicone liquids), or fluorinated oils.

[0140] Ionic liquids are ionic compounds that are liquid at room temperature, also known as molten salts at room temperature. Ionic liquids are characterized by their near-zero vapor pressure and non-volatility (they do not volatilize at high temperatures or in a vacuum). They are composed of cations and anions.

[0141] Examples of cations constituting ionic liquids include nitrogen-containing pyridinium, imidazolium, ammonium, pyrrolidineium, piperidinium, and phosphorus-containing phosphonium cations. These cations contain alkyl groups [-(CH2)]. n CH3] and other substances can be used as side chains. In addition, other cations that constitute ionic liquids include morpholinium type and sulfonium type.

[0142] Examples of anions constituting ionic liquids include TfO-, Tf2N-(TFSA-), Tf3C-, FSA-, CH3COO-, CF3COO-, BF4-, PF6-, (CN)2N-, AlCl4-, and Al2Cl7-, but these are not limited to these. Additionally, other anions constituting ionic liquids include PF6- and Cl-.

[0143] Furthermore, specific examples of ionic liquids include potassium bis(trifluoromethanesulfonyl)imide, potassium bis(nonafluorobutyryl)imide, 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, 1-methyl-1-propylpyrrolidine bis(trifluoromethanesulfonyl)imide, and 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide.

[0144] Next, an example of a method for supplying liquid heat transfer materials, which are the first heat transfer material 104 and the second heat transfer material 105, will be described. Figure 12 This is a cross-sectional view showing an example of the structure of the support member 11 when supplying liquid heat transfer material inside the wafer processing module 7. Additionally, in Figure 12 In order to simplify the illustration, the flow path 12a formed on the base 12 is omitted.

[0145] When supplying liquid heat transfer material inside the wafer processing module 7, for example, through holes 12h and 13h formed in the support member 11 can be utilized. That is, as Figure 12As an example, by connecting the liquid supply section 110 to the through holes 12h and 13h formed on the base 12 of the support member 11 and the electrostatic chuck 13, respectively, liquid heat transfer material (second heat transfer material 105) can be supplied to the underside of the tray T through the through holes 12h and 13h. Alternatively, by forming a through hole 101h for liquid supply in the circular plate portion 101 of the tray T, liquid heat transfer material (first heat transfer material 104) can be supplied to the interior of the tray T. Since the through hole 101h does not obstruct the transfer of the tray Tw by the lifting pin 14a, it is preferable to form it circumferentially and / or radially offset from the through hole 13h.

[0146] The liquid supply unit 110 includes a liquid supply source 111, a flow controller 112, a pressurizing mechanism 113, and a pressure reducing mechanism 114. Furthermore, the liquid supply unit 110 has a liquid supply path 110a and a liquid discharge path 110b. The flow controller 112 and the pressurizing mechanism 113 are respectively disposed in the liquid supply path 110a, and the pressure reducing mechanism 114 is disposed in the liquid discharge path 110b. Additionally, valves V1 to V5 for controlling the flow of liquid heat transfer material are disposed in the liquid supply path 110a and the liquid discharge path 110b.

[0147] Liquid supply source 111 stores liquid heat transfer material (first heat transfer material 104 and / or second heat transfer material 105) supplied to tray T.

[0148] The flow controller 112 controls the flow rate of the liquid heat transfer material supplied to the tray T.

[0149] The pressurization mechanism 113 supplies an inert gas (e.g., N2 gas) to the liquid supply source 111, thereby delivering the liquid heat transfer material stored in the liquid supply source 111 to the tray T.

[0150] The pressure reduction mechanism 114 reduces the pressure inside the liquid supply source 111, thereby recovering the liquid heat transfer material supplied to the tray T back to the liquid supply source 111.

[0151] Valves V1, V2, and V3 are disposed on one side of the liquid supply path 110a. Specifically, valves V1 and V2 are disposed upstream and downstream of the flow controller 112, respectively, and valve V3 is disposed near the pressurizing mechanism 113.

[0152] Valves V4 and V5 are located on one side of the liquid discharge path 110b. Specifically, valve V4 is located near the liquid supply source 111 in the liquid discharge path 110b, and valve V5 is located near the pressure reducing mechanism 114.

[0153] Furthermore, when using liquid heat transfer materials as the first heat transfer material 104 and the second heat transfer material 105, a sealing component for preventing leakage of the liquid heat transfer material is provided in the support member 11. Specifically, as... Figure 12 As shown, at least a first sealing member 115 is configured to prevent leakage from the interface between the tray T and the electrostatic chuck 13 to the outer periphery of the support member 11, and a second sealing member 116 is configured to prevent leakage to the underside of the support member 11 via the through hole 12h. As sealing members, for example, an O-ring of FKM or FFKM can be used.

[0154] Figure 13 This is a timing diagram showing the operation of valves V1 to V5 when the liquid heat transfer material is supplied / discharged through the liquid supply section 110 configured as described above.

[0155] like Figure 13 As shown, during wafer processing, when supplying liquid heat transfer material to tray T, valves V1 to V3 on the liquid supply path 110a side are opened, and valves V4 and V5 on the liquid discharge path 110b side are closed. Thus, as the pressurizing mechanism 113 pressurizes the liquid supply source 111, the liquid heat transfer material within the liquid supply source 111 is supplied to the flow controller 112. The liquid heat transfer material, whose flow rate is controlled by the flow controller 112, is then supplied to the underside of tray T as second heat transfer material 105 through through holes 12h and 13h, and to the interior of tray T as first heat transfer material 104 through through hole 101h.

[0156] On the other hand, when the liquid heat transfer material supplied to the tray T is recovered during the removal of the tray, valves V4 and V5 on the side of the liquid discharge path 110b are opened, and valves V1 to V3 on the side of the liquid supply path 110a are closed. In this way, as the pressure reducing mechanism 114 reduces the pressure on the liquid supply source 111, the first heat transfer material 104 is recovered to the liquid supply source 111 through the through hole 101h, the lower side of the tray T, and the through holes 12h and 13h, and the second heat transfer material 105 is recovered to the liquid supply source 111 through the through holes 12h and 13h.

[0157] As described above, liquid heat transfer material, serving as the first and / or second heat transfer material 105, is supplied to the tray T. Thus, by using the through holes 12h and 13h of the existing lifting pin 14a of the tray T for supplying the liquid heat transfer material, it is not necessary to form a new through hole for supplying the liquid heat transfer material in the support member 11, enabling efficient supply / discharge of the liquid heat transfer material.

[0158] In addition, Figure 12The illustration is given as an example of supplying liquid heat transfer material from liquid supply source 111 to both the interior of tray T (first heat transfer material 104) and the lower part of tray T (second heat transfer material 105), but the liquid heat transfer material supplied from liquid supply source 111 can be either one.

[0159] For example, when liquid heat transfer material is supplied from liquid supply source 111 only to the interior of tray T (first heat transfer material 104) (e.g., when the second heat transfer material 105 is a heat transfer sheet described later), such as Figure 14 As shown, the first sealing member 115 is configured at least around the through holes 13h and 101h. In this case, in order to supply liquid heat transfer material only to the interior of the tray T, the heat transfer plate is not configured in a portion between the tray T and the tray mounting surface of the electrostatic chuck 13.

[0160] Additionally, for example, when liquid heat transfer material is supplied from liquid supply source 111 only to the underside of tray T (second heat transfer material 105) (e.g., when the first heat transfer material 104 is a heat transfer sheet described later), the arrangement of the first sealing member 115 may not be from... Figure 12 The modification can be made simply by forming a through hole 101h in the circular plate portion 101 of the tray T.

[0161] In this way, even if the liquid heat transfer material is supplied from the liquid supply source 111 to either the interior of the tray T (first heat transfer material 104) or the lower part of the tray T (second heat transfer material 105), the supply / discharge of the liquid heat transfer material can be carried out efficiently by using the lifting through holes 12h and 13h of the tray T.

[0162] In addition, Figure 12 and Figure 14 In the example shown, the first heat transfer material 104 and / or the second heat transfer material 105, which are liquid heat transfer materials, are supplied inside the wafer processing module 7, but at least the first heat transfer material 104 inside the tray T can also be supplied in advance outside the wafer processing module 7.

[0163] Specifically, such as Figure 15 As shown in the flowchart, before the wafer W is mounted relative to the tray T, a liquid heat transfer material (first heat transfer material 104) is supplied to the recess 103 of the tray T in a coating apparatus (not shown). Figure 15 Step S0). The method of supplying the liquid heat transfer material to the tray T is not particularly limited, for example... Figure 15 As shown, liquid heat transfer material can also be supplied via spin coating, a process known as supplying liquid heat transfer material through nozzles positioned above the tray T, while the tray T is rotated. The tray T supplying the liquid heat transfer material then... Figure 3 The same method is used to implement various transport / processing procedures as shown in the process diagram.

[0164] Additionally, the tray T, having undergone all processing and separated from the wafer W, is then cleaned in a cleaning apparatus (not shown) to clean the recess 103 and remove the first heat transfer material 104. The cleaning method for the tray is not particularly limited; for example, [example method would be inserted here]. Figure 15 As shown, a so-called rotary cleaning process can also be performed by rotating the tray T while supplying cleaning fluid from nozzles positioned above the tray T.

[0165] Furthermore, the coating device for supplying liquid heat transfer material to the tray T or the cleaning device for cleaning the tray T can be installed inside the wafer processing system 1, similar to the aforementioned mounting device (not shown) or separating device (not shown), or it can be installed outside. Therefore, the supply of liquid heat transfer material (first heat transfer material 104) to the tray T can be performed inside the wafer processing system 1 or outside.

[0166] As described above, by using a liquid heat transfer material as the first heat transfer material 104, the wafer W can be properly thermally contacted with the entire surface of the tray T via this liquid heat transfer material. Therefore, the heat transfer efficiency between the wafer W and the tray T can be improved. Furthermore, by using a liquid heat transfer material as the second heat transfer material 105, the tray T and the entire surface of the electrostatic chuck 13 can be properly thermally contacted via this liquid heat transfer material. Therefore, the heat transfer efficiency between the tray T and the electrostatic chuck 13 can be improved, thereby improving the heat transfer efficiency between the wafer W and the electrostatic chuck 13. As a result, the entire surface of the wafer W can be properly cooled by the heat transfer fluid flowing inside the substrate 12.

[0167] In addition, Figure 14 In the example shown, the through holes 12h and 13h pre-formed in the support member 11 for the lifting pin 14a are used as the flow path for supplying liquid heat transfer material. However, it is also possible to form new through holes (not shown) in the support member 11 for supplying liquid heat transfer material.

[0168] <Sheet heat transfer materials>

[0169] Next, the sheet heat transfer materials used as the first heat transfer material 104 and / or the second heat transfer material will be described in detail.

[0170] When using sheet heat transfer materials as the first heat transfer material 104 and / or the second heat transfer material 105, the sheet heat transfer material should be selected as one that does not deteriorate under vacuum (reduced pressure) and has high thermal conductivity and plasma resistance. In one example, the thickness of the sheet heat transfer material is less than 100 μm. Examples of sheet heat transfer materials include Si-containing materials, SiC-containing materials, W-containing materials, Al2O3-containing materials, AlN-containing materials, nano-SiC-containing materials, diamond powder-containing materials, CNT-containing materials, fluororubber sheets, silicone sheets, acrylic sheets, or mesh sheets impregnated with the aforementioned liquid heat transfer materials. Furthermore, when using the aforementioned fluororubber sheets, silicone sheets, or acrylic sheets as the first heat transfer material 104, the sheet heat transfer material preferably has UV (Ultra Violet) curability, as described later. Additionally, the sheet heat transfer material as the first heat transfer material 104 preferably has thermoplasticity, as described later.

[0171] Figure 16 This diagram illustrates the main wafer processing steps when using sheet heat transfer material as the first heat transfer material 104. Furthermore, the following description uses the case where the sheet heat transfer material 104 has UV curability and thermoplasticity as an example. Additionally, the type of the second heat transfer material 105 is not particularly limited in the following description.

[0172] First, before wafer processing is performed in wafer processing module 7, a mounting device (not shown) located outside or inside wafer processing system 1 is used to place the wafer W to be processed onto tray T. Figure 16 (Step P1). At this time, a sheet heat transfer material serving as the first heat transfer material 104 is pre-positioned in the recess 103 of the tray T on which the wafer W is placed. Therefore, the wafer W is placed on the circular plate portion 101 of the tray T via the first heat transfer material 104.

[0173] When wafer W is placed on tray T, wafer W is then brought into close contact with tray T with its entire surface in contact. Figure 16 Step P2). Specifically, for example, an electrostatic adsorption voltage is applied to the stage holding the tray T to increase the pressure of the wafer W on the tray T through Coulomb force.

[0174] Furthermore, if the tightness of the fit between the wafer W and the tray T (the pressure exerted by the wafer W on the tray T) can be increased, then the operation of step P2 is not particularly limited. For example, vacuum force can be used, or the pressing of the tray T and the wafer W can be performed physically.

[0175] Next, with the wafer W and the tray T in full contact, UV light is irradiated onto the first heat transfer material 104 between the wafer W and the tray T. Figure 16(Step P3). Thus, due to the influence of UV irradiation, the first heat transfer material 104 is cured, and the wafer W and the tray T are maintained in a state of close adhesion without the application of Coulomb force, etc. As a result, the bonding between the tray T and the wafer W in the mounting device (not shown) is completed, and the tray Tw is ready to mount the wafer W.

[0176] Next, the tray Tw carrying the wafer W is transported to the wafer processing module 7 ( Figure 16 Step P4). Additionally, the tray Tw, transported to the wafer processing module 7, is held on the electrostatic chuck 13 of the support member 11 by the second heat transfer material 105. Figure 16 Step P5).

[0177] In wafer processing module 7, arbitrary processing is performed according to the purpose of wafer processing, such as plasma processing like etching. Figure 16 Step P6). Specifically, for example, after the wafer W is loaded, the interior of the plasma processing chamber 10 is depressurized to the desired vacuum level, and the desired processing gas is supplied to the plasma processing space 10s. Then, at least one radio frequency signal (radio frequency power) is supplied by the radio frequency power supply 31 to at least one lower electrode and / or at least one upper electrode to excite the processing gas to generate plasma. Then, the wafer W is subjected to plasma processing by the action of the plasma thus generated. At this time, the plasma processing of the wafer W is performed while the wafer W is placed on the tray T.

[0178] At this point, the wafer W and the tray T are in full-surface contact via the first heat transfer material 104, and the tray T and the electrostatic chuck 13 are in full-surface contact via the second heat transfer material 105. As a result, the entire surface of the wafer W is properly thermally connected to the electrostatic chuck 13, effectively utilizing the heat transfer fluid inside the circulating platform 12 for cooling of the wafer W.

[0179] When the desired wafer processing is performed on the tray Tw (wafer W), the tray Tw is then transported to a separation device (not shown) located outside or inside the wafer processing system 1. Figure 16 Step P7).

[0180] In the separation device, the tray Tw on the heated platform ( Figure 16 Step P8). Thus, the thermoplastic first heat transfer material 104 softens, and the wafer W is peeled off from the tray T. Afterwards, if the wafer W peeled off from the tray T is completely separated from the tray T ( Figure 16 Step P9) then concludes the series of wafer processing using wafer processing system 1.

[0181] As described above, by using a sheet heat transfer material as the first heat transfer material 104, the wafer W can be appropriately brought into full thermal contact with the tray T via this sheet heat transfer material, thereby improving the cooling efficiency of the wafer W. Since the sheet heat transfer material is UV-curable, it is cured while the wafer W is pressed (full-surface contact) against the tray T with surface pressure applied. This ensures that even after the surface pressure is released, the full-surface contact between the tray T and the wafer W can be appropriately maintained, further improving the cooling efficiency of the wafer W. Furthermore, since the sheet heat transfer material is thermoplastic, the wafer W can be easily peeled from the tray T by heating and curing the sheet heat transfer material.

[0182] Furthermore, by using sheet heat transfer material as the second heat transfer material 105, the tray T can be properly thermally contacted with the entire surface of the electrostatic chuck 13 via the sheet heat transfer material, which can further improve the cooling efficiency of the wafer W.

[0183] Furthermore, by using a UV-curable sheet heat transfer material to bond the wafer W and the tray T, it is unnecessary to apply an electrostatic adsorption voltage to absorb the warpage of the wafer W during the process of the wafer processing module 7. Therefore, as described above, the cooling efficiency of the wafer W can be improved with high heat transfer, energy saving can be achieved by omitting the application of electrostatic voltage, and the device structure can be simplified.

[0184] <Other heat transfer materials>

[0185] Furthermore, in the above description, the case of using liquid heat transfer material or sheet heat transfer material as the first heat transfer material 104 and the second heat transfer material 105 was described as an example. However, in the case of newly setting the first heat transfer material 104 and the second heat transfer material 105 externally attached to the tray T, compared with the conventional case of holding the wafer W on the electrostatic chuck 13, there is an increase in the interface between the wafer W and the base 12, which increases the total thermal resistance for cooling the wafer W using the heat transfer fluid in the flow path 12a.

[0186] Therefore, in the tray T involved in this embodiment, instead of placing the first heat transfer material 104 and the second heat transfer material 105 externally as described above, or based on this, such as... Figure 17 As shown, CNTs (Carbon Nanotubes) can also be synthesized as a heat transfer layer on the surface of tray T (recess 103 and the underside of tray T).

[0187] According to this embodiment, it is not necessary to apply an electrostatic adsorption voltage to the support member 11 in order to reduce the total thermal resistance as in the past. As long as the CNT is in contact with the electrostatic chuck 13, efficient high heat transfer can be achieved. In addition, this can reduce the interfacial thermal resistance generated in the tray structure according to this embodiment, and can reduce or lower the power of the electrostatic electrode used to apply the electrostatic adsorption voltage, and simplify the structure around the lower electrode.

[0188] In addition, CNTs synthesized in this way in tray T are particularly prone to reacting with O (oxygen) plasma and being consumed during plasma processing in wafer processing module 7, which may become a cause of particle generation.

[0189] Therefore, in the case of CNTs being synthesized on the surface of tray T, a sealing component 117 can also be configured to protect the CNTs from the effects of plasma. FKM or FFKM can be used as the material for the sealing component 117.

[0190] In addition, the heat transfer layer synthesized on the surface of tray T (recess 103 and the underside of tray T) is not limited to CNT. Any material that can be synthesized on tray T and improve heat transfer performance can be appropriately selected, such as nano-SiC, diamond film, sol-gel film, etc.

[0191] <Wafer mounting / detachment method relative to tray>

[0192] Next, an example of the method for mounting the wafer W in the mounting device (not shown) relative to the tray T and the method for separating the wafer W from the tray T in the separation device (not shown) will be described.

[0193] (1) Using lifting pins

[0194] When mounting / separating wafers W relative to tray T, it is possible to utilize... Figure 12 The through hole 101h formed in the circular plate portion 101 shown.

[0195] That is, such as Figure 18 As shown, in the mounting / separating device, with the tray T placed on the stage, a lifting pin is formed by freely extending and retracting from the top of the circular plate portion 101 via a through hole 101h formed on the circular plate portion 101 of the tray T. Thus, the wafer W mounted on the tray T can be supported by the lifting pin and moved longitudinally (lifted), enabling the mounting / separation of the wafer W relative to the tray T.

[0196] Furthermore, the wafer W is transported between the mounting device / separation device and the outside of the mounting device / separation device, for example, by holding the wafer W in a transport mechanism provided outside the mounting device / separation device. In this case, to suppress damage to the device layer formed on the surface side of the wafer W, the transport mechanism holds the back side or the outer end of the wafer W opposite to the surface where the device layer is formed. For example, when the transport mechanism holds the back side of the wafer W, such as... Figure 18 As shown, the device is configured such that when the wafer W is lifted by the lifting pin, it can be inserted between the wafer W and the stage.

[0197] (2) Using the insertion component

[0198] When separating wafer W relative to tray T, the gap G formed between the annular portion 102 that can be inserted into tray T and wafer W can also be utilized (see reference). Figure 4 Insertion component in ).

[0199] Specifically, when separating wafer W from tray T, such as Figure 19 As shown, an insertion member In for separating the wafer W from the tray T can also be inserted into the gap G, through which the wafer W is pushed upward to separate the wafer W from the tray T. The wafer W separated from the tray T by the insertion member In is carried out from the separation device, for example by a conveying mechanism, with its back side or outer end held in place.

[0200] Furthermore, the insertion component In can be inserted at only one location relative to the gap G, or it can be inserted at multiple locations relative to the circumferential gap G. In this case, the insertion component In has one insertion portion, which can be continuously inserted into multiple locations in the gap G, or it can have multiple insertion portions, with multiple insertion portions being inserted simultaneously at multiple locations in the gap G.

[0201] (3) Utilizing fluids

[0202] When separating the wafer W from the tray T, the lifting pin or insertion component In described above can be used instead, or, based on this, fluid can be introduced between the wafer W and the tray T, i.e., into the recess 103.

[0203] Specifically, such as Figure 20 As shown, in the separation apparatus, fluid is supplied between the wafer W and the tray T via through holes formed in the stage and through holes 101h formed in the circular plate portion 101 of the tray T, thereby causing the wafer W to float from the tray T. In this state, by utilizing... Figure 18 , Figure 19 The lifting pin or insertion component In shown allows for easy separation of the tray T and the wafer W. Alternatively, in this state, the wafer W can be removed from the separation device by using a conveying mechanism to hold the outer end of the wafer W.

[0204] In addition, an inert gas (e.g., N2 gas) or the aforementioned ionic liquid can be used as the fluid supplied to the recess 103.

[0205] (4) Dividing the tray

[0206] When loading / unloading wafer W onto / from tray T, at least a portion of tray T may be divided, and wafer W may be moved in / out from the divided portion relative to the recess 103 of tray T.

[0207] Specifically, for example Figure 21 As shown in (a), part or all of the annular portion 102 of the tray T can also be configured to be longitudinally movable (lifted) relative to the circular plate portion 101 for segmentation. In other words, it can also be configured to segment part of the tray T (especially the annular portion 102).

[0208] Then, the segment 102p is raised, and in this state, as... Figure 21 As shown in (b), by sliding the wafer W relative to the recess 103, the wafer W can be mounted / separated relative to the tray T.

[0209] (5) Other methods of dividing the pallet

[0210] In addition, in the example of (4) above, a portion of the annular portion 102 of the tray T is divided, but it may also be configured to divide at least a portion of the circular plate portion 101 instead of the annular portion 102.

[0211] Specifically, for example Figure 22 As shown, it can also be configured as part or all of the circular plate portion 101 that can buffer and drive (lift) the dividing tray T in the longitudinal direction. In other words, it can also be configured as part of the dividing tray T (especially the circular plate portion 101).

[0212] Then, the segmented portion 101p is raised using a lifting pin. In this state, the wafer W can be mounted / separated relative to the tray T by inserting the transport arm of the transport mechanism, which is located outside the mounting / separating device, into the back side of the wafer W.

[0213] Furthermore, when the circular plate portion 101 forming the tray T is divided in this way, to prevent leakage when the divided portion 101p is lifted, sheet heat transfer materials are preferably selected as the first heat transfer material 104 and the second heat transfer material 105, rather than liquid heat transfer materials. Thus, when sheet heat transfer materials are selected as the first heat transfer material 104 and the second heat transfer material 105, the first heat transfer material 104 and the second heat transfer material 105 can also be... Figure 22The material is divided in a shape consistent with the segmented portion 101p of the circular plate portion 101, as shown. Alternatively, the first heat transfer material 104 and the second heat transfer material 105 may not be divided, and a sheet heat transfer material with elasticity, such as... Figure 23 As shown, it stretches and extends longitudinally in conjunction with the lifting of the segmented portion 101p. Furthermore, for example, as... Figure 24 As shown, either the first heat transfer material 104 or the second heat transfer material 105 can be divided according to the shape of the divided portion 101p (in the example shown, the second heat transfer material 105).

[0214] Furthermore, for example in Figures 22-24 In the example shown, a portion of the circular plate portion 101 is divided into a segmented portion 101p, which is configured to be liftable, but as... Figure 25 As shown, a through hole 101h for inserting a lifting pin can also be formed in part or all of the circular plate portion 101. The wafer W can be lifted by the lifting pin via the first heat transfer material 104 or the second heat transfer material 105 (the second heat transfer material 105 in the illustrated example). Therefore, a segmented portion 101p capable of buffering the drive can be provided in the through hole 101h formed in the circular plate portion 101 of the tray T, or the segmented portion 101p can be omitted.

[0215] In addition, Figures 22-25 In the example shown, the through hole 101h (segmentation portion 101p) for mounting / separating the wafer W relative to the tray T is only disposed at the center of the circular plate portion 101. However, the number of through holes 101h (segmentation portion 101p) is not limited to this, and can also be disposed at multiple locations (preferably three or more) within the plane of the circular plate portion 101.

[0216] In addition, the shape of the through hole 101h (divided part 101p) is not particularly limited, and can be any shape such as circle or rectangle when viewed from above.

[0217] <Tray conveying / positioning method relative to electrostatic chucks>

[0218] Next, the method for conveying / placing the tray Tw configured as described above to the electrostatic chuck 13 in the wafer processing module 7 will be explained.

[0219] (1) Use lifting pins

[0220] When the tray Tw is placed on the tray support surface of the electrostatic chuck 13, the lifting pin 14a that is inserted through the through holes 12h and 13h can be used.

[0221] That is, for example, when the tray Tw is positioned above the electrostatic chuck 13 via the second conveying mechanism 8 (see also...). Figure 3The lifting pin 14a protrudes from the top of the electrostatic chuck 13 via the through holes 12h and 13h, and the tray Tw is transferred from the second conveying mechanism 8 to the upper end of the lifting pin 14a. Then, after the second conveying mechanism 8 is retracted, the lifting pin 14a is lowered, and the tray Tw can be transferred from the lifting pin 14a to the tray support surface of the electrostatic chuck 13.

[0222] In this way, by using the second conveying mechanism 8 and the lifting pin 14a to support the lower side of the tray Tw for conveying / handling, the tray Tw can be handed over on the electrostatic chuck 13 without damaging the device layer formed on the surface of the wafer W mounted on the tray T.

[0223] (2) Hold the tray from the top / side

[0224] In addition, when transporting wafer W to electrostatic chuck 13, it is necessary to prevent damage to the device layer formed on the surface of wafer W. In conventional wafer processing without using tray T, it is generally necessary to keep the back side of wafer W during transport / handover.

[0225] In this respect, during wafer processing according to this embodiment, as described above, the wafer W is transported / transferred while mounted on the tray T. Furthermore, in this embodiment, the tray T has an annular portion 102 disposed radially outside the wafer W.

[0226] Therefore, in the wafer processing involved in this embodiment, as described above, instead of using the second conveying mechanism 8 and the lifting pin 14a to support the lower side of the tray Tw, the tray T can also be held from the upper side or the side side and conveyed / transferred between the tray T and the electrostatic chuck 13.

[0227] Specifically, such as Figure 26 As an example, the second transport mechanism 8 can also be used to hold the annular portion 102 of the tray T carrying the wafer W from above for transport. In this case, by holding the annular portion 102 of the tray T, damage to the device layer formed on the surface of the wafer W can be suppressed. Therefore, the second transport mechanism 8 can also physically hold the annular portion 102 of the tray T and transport it. The second transport mechanism 8 is not particularly limited in the method of holding the tray T; any method such as magnet, vacuum adsorption, or electrostatic adsorption can be selected.

[0228] Thus, in the wafer processing according to this embodiment, in which the wafer W to be processed is mounted on the tray T for transport / transfer, by holding the tray T, it is not necessary for the wafer W and the second transport mechanism 8 to come into direct contact. Therefore, the tray Tw on which the wafer W is mounted can be approached from above for holding / transportation.

[0229] Furthermore, since the tray Tw can be held from above in this manner, when transferring the tray Tw to the electrostatic chuck 13, it is not necessary to use the lifting pin 14a as in the past; instead, the tray Tw can be transferred directly from the second conveying mechanism 8 to the electrostatic chuck 13. Therefore, by holding the tray Tw from above or to the side in this way, the lifting mechanism 14 for transferring the tray Tw to the electrostatic chuck 13 can be omitted, simplifying the structure of the wafer processing module 7.

[0230] <Method for securing the tray relative to the supporting components>

[0231] Next, an example of a method for fixing the tray Tw transported as described above to the support member 11 (electrostatic chuck 13) in the wafer processing module 7 will be described.

[0232] As described above, the tray Tw is held on the tray support surface of the support member 11. However, in order to effectively utilize the heat transfer fluid flowing in the flow path 12a formed on the base 12 to cool the wafer W, it is necessary to increase the pressing force (surface pressure) of the tray Tw on the electrostatic chuck 13. Therefore, in the following description, a method for holding the tray Tw on the electrostatic chuck 13 with a pressing force greater than its own weight will be described to improve the cooling efficiency of the wafer W.

[0233] (1) Electrostatic adsorption

[0234] like Figure 2 As shown, the electrostatic chuck 13 of the support member 11 has an electrostatic electrode 13b on the tray support surface for supporting the tray Tw. The support member 11 can be held in place by adsorption with the tray Tw using the electrostatic electrode 13b.

[0235] First, the case where the circular plate portion 101 of the tray T is made of a conductive material will be explained.

[0236] During the adsorption and retention of the tray T, firstly, as Figure 27 As shown in (a), a voltage (positive (+) charge in the illustrated example) is applied to the electrostatic electrode 13b. This causes the electrostatic electrode 13b to become positively (+) charged.

[0237] When the electrostatic electrode 13b is positively charged, as follows: Figure 27 As shown in (b), a charge with the opposite polarity (i.e., negative) to the charge stored in the electrostatic electrode 13b is accumulated in the circular plate portion 101 of the tray T or the wafer W, separated by the ceramic component 13a which serves as a dielectric. In this way, a Coulomb force is generated with the tray T (wafer W) and the electrostatic electrode 13b as the two poles, thereby attracting and holding the tray Tw by the tray support surface of the electrostatic chuck 13.

[0238] Furthermore, in the case where the tray Tw is held adsorbed and held on the electrostatic chuck 13 by Coulomb force, the Coulomb force can be increased by generating plasma in the wafer processing module 7, thereby improving the adsorption and holding force of the electrostatic chuck 13. Specifically, as... Figure 27 As shown in (c), by generating plasma in the plasma processing space 10s, a charge with the opposite polarity (i.e., negative (-)) to the charge stored in the electrostatic electrode 13b is moved from the plasma to the circular plate portion 101 of the tray T or the wafer W. That is, the Coulomb force can be increased by replenishing the charge with plasma, and the tray Tw can be more firmly adsorbed and held.

[0239] Next, the case where the circular plate portion 101 of the tray T is made of insulating material will be described. When the circular plate portion 101 of the tray T is made of insulating material, a charged electrode 101b is disposed inside the circular plate portion 101.

[0240] During the adsorption and retention of the tray T, firstly, as Figure 28 As shown in (a), a voltage (positive (+) charge in the illustrated example) is applied to the electrostatic electrode 13b. Thus, the electrostatic electrode 13b becomes positively (+) charged.

[0241] When the electrostatic electrode 13b is positively charged, as follows: Figure 28 As shown in (b), with the ceramic component 13a serving as the dielectric and the circular plate portion 101 serving as the insulating component separated, a charge with the opposite polarity (i.e., negative (-)) to the charge accumulated on the electrostatic electrode 13b is stored in the charged electrode 101b or the wafer W disposed on the circular plate portion 101. In this way, a Coulomb force is generated with the charged electrode 101b (wafer W) and the electrostatic electrode 13b as the two poles, thereby the tray Tw is attracted and held by the tray support surface of the electrostatic chuck 13.

[0242] Furthermore, even when the circular plate portion 101 of the tray T is made of insulating material, the adsorption and holding force of the electrostatic chuck 13 can be improved by generating plasma in the wafer processing module 7, thereby increasing the Coulomb force. Specifically, as... Figure 28 As shown in (c), by generating plasma in the plasma processing space for 10s, a charge with the opposite polarity (i.e., negative (-)) to the charge stored in the electrostatic electrode 13b is transferred from the plasma to the charged electrode 101b or the wafer W. That is, the Coulomb force can be increased by replenishing the charge with plasma, and the holding tray Tw can be more firmly adsorbed.

[0243] Thus, even if the circular plate portion of the tray T is composed of either a conductive or an insulating component, the tray Tw can be properly held and adhered to the tray support surface by applying a voltage to the electrostatic electrode 13b of the electrostatic chuck 13. Furthermore, by generating plasma in the plasma processing space 10s, the Coulomb force between the tray Tw and the electrostatic chuck 13 can be increased, resulting in a more secure adhesion and retention of the tray Tw.

[0244] Furthermore, by utilizing Coulomb force in this way, the adsorption and retention of the tray Tw can be controlled simply by controlling the voltage applied to the electrostatic electrode 13b. Therefore, the tray Tw can be adsorbed and retained without complicating the structure of the support member 11. In addition, since adsorption and retention can be performed solely by voltage control, the controllability is excellent, and the in-plane adsorption force of the tray Tw can be uniformly controlled, i.e., the surface pressure of the tray Tw relative to the electrostatic chuck 13 can be uniformly controlled, improving the cooling efficiency of the wafer W and enhancing the repeatability of this adsorption force.

[0245] Furthermore, by controlling the in-plane adsorption force of the tray Tw, the tilt of the outermost periphery of the wafer W can be controlled when the wafer processing module 7 performs an etching process as a plasma process, while the wafer processing module 7 is performing wafer processing using Coulomb force.

[0246] When the height of the annular portion 102 of the tray T changes due to plasma processing, the position of the plasma sheath layer formed above the outer periphery of the wafer W is lower than the position of the plasma sheath layer formed above the center of the wafer W. As a result, the ion incident angle is tilted relative to the wafer W, and the etching groove formed at the outermost periphery of the wafer W is tilted.

[0247] Therefore, in the wafer processing module 7 of this embodiment, the adsorption force is controlled within the surface of the tray Tw of the electrostatic chuck 13 (more specifically, the two regions of the radially inner circular region and the radially outer annular region) according to the consumption rate (consumption amount) of the annular portion 102 of the tray T.

[0248] Specifically, for example, by making the adsorption force on the outer periphery of the tray Tw stronger than the adsorption force on the center of the tray Tw, such as... Figure 29 As shown, the adsorption shape of the tray Tw in the cross-sectional view is deformed into an upper convex shape. Thus, the upper surface height of the outer periphery or annular portion 102 of the wafer W is lower than the upper surface height of the center portion of the wafer W. Consequently, the position of the plasma sheath layer formed above the outer periphery side of the wafer W is lower, such as... Figure 29 As shown, the ion incident angle can be tilted radially inward towards the wafer W.

[0249] On the other hand, for example, by making the adsorption force on the outer periphery of the tray Tw weaker compared to the adsorption force on the center of the tray Tw, such as... Figure 30 As shown, the adsorption shape of the tray Tw in the cross-sectional view is deformed into an upper concave shape. Thus, the upper surface height of the outer periphery or annular portion 102 of the wafer W becomes higher than the upper surface height of the center portion of the wafer W. Consequently, the position of the plasma sheath layer formed above the outer periphery side of the wafer W becomes higher, such as... Figure 30 As shown, this allows the ion incident angle to be tilted radially outward towards the wafer W.

[0250] According to this embodiment, by controlling the in-plane adsorption force of the tray Tw based on the consumption rate (consumption amount) of the annular portion 102 of the tray T and the purpose of the etching process, the ion incident angle relative to the wafer W can be controlled, and the tilt of the etching groove formed on the outermost periphery of the wafer W can be controlled.

[0251] (2) Clamping

[0252] In addition, in the above Figures 27-30 The example shown illustrates the case where the tray Tw is electrostatically attracted using the electrostatic chuck 13 of the support member 11. However, the method of holding the tray Tw relative to the support member 11 is not limited to this. Therefore, in the wafer processing module 7, the support member 11 may not necessarily have the electrostatic chuck 13.

[0253] Specifically, for example Figure 31 As shown, multiple, such as two or more, pins 130 can be provided on the underside of the tray T. After the pins 130 are inserted into the fixing holes formed in the support member 11, the tray T and the support member 11 are mechanically held / fixed by the locking mechanism 131. The pins 130 and the locking mechanism 131 preferably have a structure that introduces the pins 130 into the fixing holes (support member 11) when the tray T is fixed (locked) relative to the support member 11, and pushes the pins 130 relative to the fixing holes (support member 11) when it is released (unlocked). In this way, by locking the pins 130 provided on the tray T relative to the support member 11, the tightness (surface pressure) of the tray T and the support member 11 (electrostatic chuck 13) can be improved, the heat transfer can be improved, and the cooling efficiency of the wafer W can be improved.

[0254] In addition, the construction of the locking mechanism 131 is only required to improve the tight fit between the support member 11 (electrostatic chuck 13) and the tray T when the tray T is fixed (locked), and there are no particular limitations.

[0255] One example of the locking mechanism 131 is a clamping chuck mechanism, such as... Figure 31As shown, the sliding mechanism 131c can also move the tapered introduction member 131a for introducing the pin member 130 and the tapered ejection member 131b for ejecting the pin member 130 in the horizontal direction.

[0256] Alternatively, for example, the locking mechanism 131 is a ring-shaped rotating mechanism, such as... Figure 32 As shown, the locking mechanism 131 can also be configured to rotate circumferentially relative to the pin member 130 after the pin member 130 is inserted into the fixing hole. In this case, the rotating mechanism that rotates the tray T and the support member 11 relative to each other can also be an electric motor. Alternatively, the annular rotating mechanism can rotate only the locking mechanism 131 relative to the pin member 130, or it can rotate the entire support member 11 relative to the pin member 130.

[0257] When configured to allow only rotation of the locking mechanism 131, the structure of the locking mechanism 131 can be miniaturized. When configured as a whole capable of rotating the support member 11, the structure of the locking mechanism 131 becomes larger. On the other hand, when liquid heat transfer material is supplied through the aforementioned through holes 12h and 13h (see...) Figure 12 By rotating, the through holes 12h and 13h can be moved circumferentially during the handover of tray T and the supply of liquid heat transfer material. In other words, the handover of tray T and the supply of liquid heat transfer material can be achieved without causing the position of the through hole 101h formed on tray T to be offset circumferentially and / or radially from the position of the through holes 12h and 13h.

[0258] (3) Magnetic retention

[0259] Alternatively, the tray Tw can also be held in place by magnetic attraction on the support component 11.

[0260] Specifically, such as Figure 33 As shown, magnets 102m and 11m are arranged inside the annular portion 102 of the tray T and inside the support member 11, on the outer periphery (position opposite to the annular portion 102). As the magnets 102m and 11m arranged inside these annular portions 102 and support members 11, electromagnets or permanent magnets can be selected.

[0261] Furthermore, by arranging the tray Tw above the support member 11 with the magnet 11m facing each other, a magnetic force is generated with the magnet 11m and the magnet 102m as the two poles, which can attract and hold the tray Tw on the support member 11.

[0262] Additionally, at this time, for example, Figure 33As shown, the demagnetizing body 140 is configured to be freely insertable and detachable between the annular portion 102 of the tray Tw and the outer periphery of the support member 11. Thus, by distributing the demagnetizing body 140 between the annular portion 102 and the support member 11, the magnetic force generated between the magnets 11m and 102m can be eliminated, and the tray Tw can be transported from the tray support surface of the support member 11.

[0263] Thus, in the wafer processing module 7 of this embodiment, it can also be configured such that magnets are arranged inside the tray T and the support member 11, so that the support member 11 can be attracted and held to hold the tray T.

[0264] (4) Vacuum adsorption

[0265] Alternatively, the support component 11 of the wafer processing module 7 can also be equipped with a vacuum chuck instead of the electrostatic chuck 13. In this case, as the second heat transfer material 105 disposed at least on the underside of the tray T, a sheet heat transfer material with elasticity is preferably selected.

[0266] Specifically, for example Figure 34 As shown in (a), a through hole 105h is formed in the second heat transfer material 105 (sheet heat transfer material) disposed on the lower side of the tray T at a position corresponding to the vacuum line 11v formed on the support member 11 in the top view. Thus, as... Figure 34 As shown in (b), by starting the vacuum pump connected to the vacuum line 11v, the tray Tw is held in place on the tray support surface of the support member 11 by vacuum force.

[0267] Furthermore, at this time, by selecting a sheet heat transfer material with elasticity as the second heat transfer material 105, and simultaneously pressing the tray T against the tray support surface using vacuum force, the second heat transfer material 105 is compressed in the thickness direction. Thus, through the plastic deformation of the second heat transfer material 105, the through-hole 105h is blocked, and the entire surface of the tray T and the support member 11 comes into contact via the second heat transfer material 105. This allows for proper vacuum adsorption of the tray T and improves the cooling efficiency of the wafer W mounted on the tray T.

[0268] <Methods for detaching a tray from an electrostatic suction cup>

[0269] Next, an example of a method for detaching the tray Tw, which is fixed to the support member 11 (electrostatic chuck 13) as described above, from the support member 11 will be described.

[0270] As described above, the support member 11 in this embodiment is provided with a lift 14, which is configured to be able to detach from the tray support surface of the support member 11 (electrostatic chuck 13) by means of a lifting pin 14a from the lower support tray Tw.

[0271] However, when the tray Tw and support member 11 using the lifting pin 14a are detached, there are concerns that the tray Tw may not be easily peeled off from the tray support surface due to residual adsorption or vacuum adsorption. Moreover, in the presence of residual adsorption, there are concerns that overload may cause damage to the tray T or wafer W when the tray Tw is raised using the lifting pin 14a.

[0272] Therefore, in the wafer processing module 7 of this embodiment, in order to suppress the damage caused by the overload involved in the above-mentioned lifting, an inert gas (e.g., N2 gas) is supplied to the interface between the tray Tw and the support member 11.

[0273] More specifically, such as Figure 35 As shown, an inert gas supply path 151, connected to a gas supply unit 150 equipped with a gas supply source, is added to the through holes 12h and 13h through which the lifting pin 14a for raising and lowering the tray Tw is inserted. Furthermore, when the tray Tw detaches, the inert gas supply begins before the tray Tw is raised using the lifting pin 14a, thereby assisting in the detachment of the tray Tw from the support member 11 by pressurizing the interface between the tray Tw and the support member 11. Additionally, the gas supply unit 150 can also be connected to... Figure 2 The gas supply unit 20 shown is shared.

[0274] According to this embodiment, by supplying inert gas when detaching the tray Tw from the support member 11, the tray Tw can be easily disassembled.

[0275] In addition, as described above, the support member 11 has three through holes 12h and 13h for inserting multiple, in this embodiment, three lifting pins 14a, but the inert gas used to detach the tray Tw only needs to be supplied to at least one of them.

[0276] Furthermore, in the above embodiment, an inert gas (N2 gas) is supplied to the interface between the tray Tw and the support member 11. However, the supplied gas is not limited to an inert gas, as long as the interface between the tray Tw and the support member 11 can be appropriately pressurized under vacuum. Specifically, for example, the aforementioned ionic liquid may also be supplied to the interface between the tray Tw and the support member 11 when the tray Tw is detached.

[0277] <Effective properties of the technology disclosed herein>

[0278] In the wafer processing system 1 disclosed herein, wafers W to be processed are mounted on trays T, and these trays T and wafers W are transported / processed as a single unit. Furthermore, a first heat transfer material 104 and a second heat transfer material 105 are respectively disposed at the interface between the tray T and the wafer W (inside the recess 103) and at the interface between the tray T and the support member 11 (electrostatic chuck 13), thereby ensuring full-surface contact between the wafer W and the tray T, and between the tray T and the support member 11 (electrostatic chuck 13).

[0279] Therefore, in the wafer processing module 7 disclosed herein, the heat transfer performance from the wafer W to the support member 11 is improved, and the entire surface of the wafer W can be cooled appropriately and uniformly by the heat transfer fluid flowing in the flow path 12a of the base 12 formed in the support member 11.

[0280] Furthermore, by ensuring that the wafer W and the tray T, and the tray T and the support member 11 (electrostatic chuck 13) make full-surface contact respectively, gaps that would have previously formed between the back side of the wafer W and the outer periphery of the electrostatic chuck 13 can be suppressed. Therefore, the accumulation of deposits (so-called "shoulder deposits"), particularly on the shoulder of the outer periphery of the electrostatic chuck 13, can be suppressed, reducing the frequency of the wafer-level dry cleaning (WLDC) process in the wafer processing module 7.

[0281] Furthermore, in the wafer processing module 7 disclosed herein, as described above, the pressing force (surface pressure) of the tray T on the tray support surface of the support member 11 is increased by electrostatic adsorption or clamping. As a result, the heat transfer performance from the wafer W to the support member 11 is further improved, and the cooling efficiency of the wafer W can be more appropriately improved.

[0282] Furthermore, in the wafer processing module 7 disclosed herein, the wafer W can be cooled uniformly in-plane by sandwiching the first heat transfer material 104 and the second heat transfer material 105. However, in the formation of through holes (e.g., through holes 12h and 13h for lifting pins 14a, He gas supply holes, through holes for supplying electrostatic adsorption power or radio frequency power cable insertion, etc.) in the plane of the support member 11, temperature anomalies with reduced cooling efficiency may occur.

[0283] Therefore, in the support member 11 of the wafer processing module 7 according to this embodiment, it is preferable that the through holes formed in the support member 11 do not coincide with the wafer W to be processed, at least in the longitudinal direction. More specifically, in the tray Tw held on the tray support surface of the support member 11, it is preferable to change the formation position of these through holes so that through holes are not formed directly below the circular plate portion 101 (recess 103) on which the wafer W is mounted.

[0284] In this case, the locations where these through holes are formed, such as Figure 36 and Figure 37 As shown, preferably directly below the annular portion 102 in the tray T. In this case, the PCD (Pitch Circle Diameter) of the desired through-hole (through-holes 12h and 13h in the illustrated example) is set to be larger than the outer diameter r3 of the wafer W to be processed (see also...). Figure 4 The sum of the diameter of the through hole and the diameter of the through hole, r5 (PCD > r3 + r5).

[0285] According to this embodiment, the through holes formed in the support member 11, such as through holes 12h and 13h for the lifting pin 14a, or He gas supply holes, and through holes for cable insertion for supplying electrostatic adsorption power or radio frequency power, are configured so that they do not overlap with the wafer W in the longitudinal direction. Therefore, during wafer processing, the generation of in-plane temperature anomalies on the wafer W can be suppressed, and the wafer W can be cooled more appropriately.

[0286] Furthermore, in the wafer processing system 1 described above, as mentioned above, by conveying / processing the tray T carrying the wafer W in the wafer processing module 7, it is possible to suppress the accumulation of shoulder deposits on the support member 11 (electrostatic chuck 13), thereby reducing the cleaning process of the wafer processing module 7. However, during wafer processing in the wafer processing module 7, in addition to the shoulder of the support member 11, deposits also adhere to, for example, the sidewall 10a of the plasma processing chamber 10 or the nozzle 15, thus requiring a cleaning process accompanying the process.

[0287] At this time, as described above, if the cleaning (WLDC) process is performed while the tray T and the wafer W are being transported together, and the tray T is not being held in the support member 11, the surface of the support member 11 may be worn away due to the influence of the plasma generated during the cleaning process.

[0288] Therefore, in the cleaning process of the wafer processing module 7 according to this embodiment, a tray T, either in a state where the wafer W to be processed is not mounted or in a state where a virtual wafer for cleaning is mounted, is placed on the support member 11. Hereinafter, for convenience, the tray T used in this cleaning process will sometimes be referred to as "tray Tc". The tray Tc that is moved into the wafer processing module 7 in the cleaning process can be the same as the tray T that mounts the wafer W to be processed, but it is preferably made of a low-pollution material that does not produce deposits in the cleaning process, such as Si, SiC, Al2O3 or Y2O3. In addition, the first heat transfer material 104 and the second heat transfer material 105 may not be provided on the cleaning tray Tc.

[0289] Furthermore, as described above, since it is not necessary to mount the virtual wafer on the cleaning tray Tc during the cleaning process, the recess 103 for mounting the wafer W may not need to be formed on the cleaning tray Tc. Therefore, as Figure 10 As shown, the cleaning tray Tc may have a recess 108 formed only on its underside, or although the illustration is omitted, it may be composed of only a generally disc-shaped portion. Therefore, the cleaning tray Tc does not necessarily need to have an annular portion 102, and may be composed of only a circular plate portion 101.

[0290] In addition, during the cleaning process, when removing deposits attached to the inside of the wafer processing module 7, most of the particle components (the removed deposits) are discharged with the exhaust gas in the plasma processing chamber 10, but some remain in the plasma processing chamber 10, which may affect subsequent processing.

[0291] Therefore, in the cleaning process of wafer processing module 7, Coulomb force or dielectric electrophoresis force can also be used to capture particle components.

[0292] Specifically, for example Figure 38 As an example, a cleaning electrode 160 capable of applying voltage is disposed within the circular plate portion 101 of the cleaning tray Tc. The cleaning electrode 160 preferably has a bipolar configuration capable of applying voltages of opposite polarities to each electrode. Furthermore, the arrangement of the cleaning electrode 160 as viewed from above is not particularly limited, but a configuration that easily generates a potential difference between the two (bipolar) electrodes is preferred, for example... Figure 39 The structure shown depicts two semicircles arranged opposite each other, as... Figure 40 The configuration shown is roughly spiral (vortex).

[0293] Furthermore, during the cleaning process, by applying voltage to the cleaning electrode 160 configured in this way, the generated Coulomb force or dielectric electrophoretic force is used to capture the particle components onto the cleaning tray Tc, thus enabling more appropriate cleaning of the wafer processing module 7.

[0294] In addition, there is no particular limitation on the timing of the cleaning process. It can be carried out in the wafer processing module 7 as a single wafer, or it can be carried out according to the preset number of wafers processed each time or 25 wafers W per batch.

[0295] Furthermore, in the above description, the example given is that wafer processing module 7 is a plasma processing module that performs plasma processing such as etching on wafer W. However, the wafer processing performed by wafer processing module 7 is not limited to plasma processing. For example, the techniques disclosed herein can be applied whenever it is necessary to maintain the temperature of the wafer W to be processed at an in-plane uniform temperature.

[0296] The embodiments disclosed herein should be considered exemplary in all respects, not limiting. The above embodiments may be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit. For example, the constituent elements of the above embodiments can be arbitrarily combined. Based on such arbitrary combinations, the functions and effects of each structural element related to the combination can naturally be obtained, and based on the description herein, those skilled in the art can obtain obvious other functions and effects.

[0297] Furthermore, the effects described in this specification are merely illustrative or exemplary and are not intended to be limiting. In other words, the technology disclosed herein can be used in conjunction with or in lieu of the aforementioned effects, and may have other obvious effects on those skilled in the art based on the description in this specification.

Claims

1. A substrate processing apparatus, the substrate processing apparatus processing a substrate, comprising: Treatment chamber; and A support component, disposed within the processing chamber, has a tray support surface thereon for supporting the tray. The tray has a recess formed thereon on which the substrate is received via a first heat transfer material. The tray support surface is configured such that a second heat transfer material is sandwiched between it and the underside of the tray.

2. The substrate processing apparatus according to claim 1, wherein, The tray has: The circular plate portion has a substrate support surface on it; and The annular portion is configured to surround the substrate on the substrate support surface.

3. The substrate processing apparatus according to claim 2, wherein, The annular portion has an outer diameter that is at least larger than the outer diameter of the support member supporting the tray.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The first heat transfer material and the second heat transfer material are selected from either liquid heat transfer materials or sheet heat transfer materials.

5. The substrate processing apparatus according to claim 4, wherein, The liquid heat transfer material is a low vapor pressure liquid.

6. The substrate processing apparatus according to claim 5, wherein, The low vapor pressure liquid is selected from at least one of ionic liquids, silicone liquids, or fluorinated oils.

7. The substrate processing apparatus according to claim 4, wherein, The sheet heat transfer material is selected from any one of the following: Si-containing materials, SiC-containing materials, W-containing materials, fluororubber sheets, silicone sheets, acrylic sheets, or mesh sheets.

8. The substrate processing apparatus according to claim 2 or 3, wherein, The support component includes a lifting pin on the pallet support surface that allows the pallet to be raised and lowered. The support component has a through hole through which the lifting pin inserts. The through hole is configured so that it does not coincide with the circular plate portion when viewed from above.

9. The substrate processing apparatus according to claim 8, wherein, The substrate processing apparatus further includes a gas supply unit for supplying fluid to the interface between the tray support surface and the tray. The gas supply unit supplies the fluid to the interface between the tray support surface and the tray via the through hole.

10. The substrate processing apparatus according to claim 9, wherein, The fluid is selected from either an inert gas or an ionic liquid.

11. A substrate processing apparatus, the substrate processing apparatus processing a substrate, comprising: Processing chamber; A support member, disposed within the processing chamber, has a tray support surface thereon; and The tray has a recess formed on it to receive the substrate. The tray has: A first heat transfer material is disposed in the recess and sandwiched between the substrate and the tray; and A second heat transfer material is disposed on the underside of the tray, sandwiched between the tray support surface and the tray.

12. The substrate processing apparatus according to claim 11, wherein, The tray has: The circular plate portion has a substrate support surface on it; and The annular portion is configured to surround the substrate on the substrate support surface.

13. The substrate processing apparatus according to claim 12, wherein, The annular portion has an outer diameter that is at least larger than the outer diameter of the support member supporting the tray.

14. The substrate processing apparatus according to any one of claims 11 to 13, wherein, The first heat transfer material and the second heat transfer material are selected from either liquid heat transfer materials or sheet heat transfer materials.

15. A substrate processing system, wherein the substrate processing system processes a substrate, The substrate is transported and processed while mounted on a tray, the tray having a recess formed on it for receiving the substrate. The substrate processing system includes: A mounting device that mounts the substrate onto the tray; A conveying mechanism that holds and conveys the tray carrying the substrate; The processing module performs the desired processing on the substrate; and A separation device separates the substrate from the tray.

16. The substrate processing system according to claim 15, wherein, The tray has: The circular plate portion has a substrate support surface on it; and The annular portion is configured to surround the periphery of the substrate on the substrate support surface. The conveying mechanism holds the annular portion of the tray from above and conveys it.

17. The substrate processing system according to claim 15 or 16, wherein, The tray has: A first heat transfer material is disposed in the recess and sandwiched between the substrate and the tray; and A second heat transfer material is disposed on the underside of the tray, sandwiched between a support member disposed within the processing module and the tray. The substrate processing system also includes: The coating apparatus supplies the first heat transfer material to the recess before mounting the substrate onto the tray; and The cleaning device removes the first heat transfer material remaining in the recess after separating the substrate from the tray.

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