Self-adaptive control method, system and equipment for magnetron sputtering power supply and medium

Abstract

The invention provides a magnetron sputtering power supply self-adaptive control method, system and device and a medium, and the method comprises the steps: collecting a multi-source operation signal used for representing a reactive sputtering operation state for a magnetron sputtering process under a reactive sputtering working condition; based on the multi-source operation signals, reactive sputtering operation states are analyzed and divided into operation state types including a stable operation state, a transition operation state and an abnormal trend operation state; selecting a corresponding intermediate frequency pulse to participate in a modulation strategy based on the operation state category; based on a preset modulation parameter sub-gear set, mapping an intermediate-frequency pulse participation proportion interval and an intermediate-frequency pulse participation duration interval limited by each intermediate-frequency pulse participation modulation strategy into a plurality of intermediate-frequency pulse modulation parameter sub-gears, and determining a target intermediate-frequency pulse modulation parameter sub-gear based on the reactive sputtering operation state deviation, and controlling the output of the magnetron sputtering power supply according to the target intermediate frequency pulse modulation parameter sub-gear.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to an adaptive control method, system, device and medium for magnetron sputtering power supply. Background Technology

[0002] Magnetron sputtering technology is widely used in the deposition of thin film materials during semiconductor device manufacturing. In reactive sputtering, reactive gases are introduced during the magnetron sputtering process to achieve reactive deposition of the target material, such as nitriding and oxidation. However, the introduction of reactive gases significantly alters the plasma discharge conditions during magnetron sputtering under reactive sputtering conditions. This results in greater fluctuations in the output voltage, current, and discharge behavior of the magnetron sputtering power supply, easily leading to problems such as arc discharge and target surface reaction imbalance, thus affecting the stable operation of the magnetron sputtering process under reactive sputtering conditions.

[0003] In existing technologies, stability control of magnetron sputtering processes under reactive sputtering conditions typically relies on fixed power output or simple adjustments based on a single electrical parameter threshold, making it difficult to comprehensively reflect the overall changing characteristics of the discharge state under reactive sputtering conditions. Furthermore, some technical solutions indirectly adjust the system by introducing additional process monitoring methods or target / wafer surface monitoring devices, which not only increases system complexity but also makes it difficult to respond promptly to rapid changes in the discharge state.

[0004] Therefore, there is an urgent need for an adaptive control method, system, device, and medium for magnetron sputtering power supplies. Without introducing additional process detection methods, this method should effectively evaluate the discharge state under reactive sputtering conditions based on the operating signals of the magnetron sputtering power supply itself, and achieve adaptive adjustment of the output of the magnetron sputtering power supply to improve the operational stability of the magnetron sputtering process under reactive sputtering conditions. Summary of the Invention

[0005] This application provides an adaptive control method, system, device, and medium for magnetron sputtering power supplies to solve the problems in the prior art.

[0006] In a first aspect, this application provides an adaptive control method for a magnetron sputtering power supply, comprising: The acquisition of multi-source operating signals is aimed at the magnetron sputtering process under reactive sputtering conditions, and the acquisition of multi-source operating signals to characterize the reactive sputtering operating status. The reactive sputtering operation status is graded and evaluated based on the multi-source operation signal. The reactive sputtering operation status is analyzed and classified into operation status categories including stable operation status, transitional operation status and abnormal trend operation status. The determination of the intermediate frequency pulse participation modulation strategy is based on the operation state category, and the corresponding intermediate frequency pulse participation modulation strategy is selected. The intermediate frequency pulse participation modulation strategy includes low participation modulation strategy, medium participation modulation strategy and high participation modulation strategy. The adaptive determination of intermediate frequency pulse modulation parameters and power supply control are based on a preset set of modulation parameter sub-levels. The intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by each intermediate frequency pulse participation modulation strategy are mapped to multiple intermediate frequency pulse modulation parameter sub-levels. Based on the deviation of the reaction sputtering operation state, the target intermediate frequency pulse modulation parameter sub-level is determined, and the output of the magnetron sputtering power supply is controlled according to the target intermediate frequency pulse modulation parameter sub-level.

[0007] In one possible design, the graded evaluation of the reactive sputtering operating status includes: The multi-source operating signals are analyzed within a preset analysis window to extract operating features that characterize the discharge state formed by the output of the magnetron sputtering power supply. Based on the aforementioned operating characteristics and the corresponding process status identification signals, the reactive sputtering operating status within the current analysis window is determined and classified into operating status categories including stable operating status, transitional operating status, and abnormal trend operating status.

[0008] In one possible design, the low-participation modulation strategy, the medium-participation modulation strategy, and the high-participation modulation strategy all include a participation ratio range of the intermediate frequency pulse and a participation duration range of the intermediate frequency pulse, wherein: The intermediate frequency pulse participation ratio range corresponding to the low participation modulation strategy is the first preset ratio range, and the intermediate frequency pulse participation duration range is the first preset time range. The intermediate frequency pulse participation ratio range corresponding to the intermediate participation modulation strategy is the second preset ratio range, and the intermediate frequency pulse participation duration range is the second preset time range. The intermediate frequency pulse participation ratio range corresponding to the high participation modulation strategy is the third preset ratio range, and the intermediate frequency pulse participation duration range is the third preset time range. Wherein, the first preset ratio range is smaller than the second preset ratio range, and the second preset ratio range is smaller than the third preset ratio range; The first preset time interval is shorter than the second preset time interval, and the second preset time interval is shorter than the third preset time interval.

[0009] In one possible design, the adaptive determination of the intermediate frequency pulse modulation parameters and power supply control include: For each intermediate frequency pulse participating in the modulation strategy, a corresponding set of modulation parameter sub-levels is configured, and each set of modulation parameter sub-levels includes multiple preset intermediate frequency pulse modulation parameter sub-levels; Based on the selected intermediate frequency pulse participation modulation strategy, a target modulation parameter sub-level set is determined. Within the intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by the intermediate frequency pulse participation modulation strategy, the consistency of the intermediate frequency pulse modulation parameter sub-levels in the target modulation parameter sub-level set is verified. Based on operational characteristics, calculate the deviation of the reactive sputtering operational state within the current analysis window; Based on the deviation of the reactive sputtering operation state and the target modulation parameter sub-level set, the target intermediate frequency pulse modulation parameter sub-level is determined according to the preset classification rules; The output of the magnetron sputtering power supply is controlled based on the target intermediate frequency pulse modulation parameter sub-level.

[0010] In one possible design, the deviation of the reactive sputtering operating state is calculated based on the characteristics of output voltage variation, output current variation, and arc occurrence frequency. The reactive sputtering operating state deviation is used to characterize the overall deviation of the discharge state of the magnetron sputtering power supply from the preset reference operating state under the current reactive sputtering condition. The larger the value of the reactive sputtering operating state deviation, the higher the fluctuation of the discharge state of the magnetron sputtering power supply or the more obvious the abnormal trend.

[0011] In one possible design, after determining the target modulation parameter sub-level set, a corresponding sub-level index is generated for the intermediate frequency pulse modulation parameter sub-level in the target modulation parameter sub-level set; The sub-gear index is used to establish a correspondence with the deviation of the reactive sputtering operating state.

[0012] In one possible design, determining the target intermediate frequency pulse modulation parameter sub-level includes: Based on the established intermediate frequency pulse participation modulation strategy, obtain the target modulation parameter sub-level set corresponding to the intermediate frequency pulse participation modulation strategy; The effective range of the deviation of the reactive sputtering operation state is divided into N deviation regions according to a preset grading rule; The N deviation regions are arranged in ascending order, and a corresponding deviation region index is assigned to each deviation region. The deviation of the reactive sputtering operating state is compared with N deviation regions respectively; When the deviation of the reactive sputtering operation state falls into a deviation region, the deviation index of the reactive sputtering operation state deviation is the deviation region index of the deviation region. Based on the correspondence between the deviation index and the sub-gear index, the intermediate frequency pulse modulation parameter sub-gear corresponding to the deviation index is selected from the target modulation parameter sub-gear set; The intermediate frequency pulse participation ratio parameter and the intermediate frequency pulse participation duration parameter in the intermediate frequency pulse modulation parameter sub-level are determined as the target intermediate frequency pulse modulation parameter.

[0013] Secondly, this application provides an adaptive control system for a magnetron sputtering power supply, comprising: The multi-source operation signal acquisition module acquires multi-source operation signals to characterize the reactive sputtering operation status of the magnetron sputtering process under reactive sputtering conditions. The reactive sputtering operation status classification and evaluation module analyzes the reactive sputtering operation status based on the multi-source operation signal and classifies it into operation status categories including stable operation status, transitional operation status and abnormal trend operation status. The intermediate frequency pulse participation modulation strategy module selects a corresponding intermediate frequency pulse participation modulation strategy based on the operating state category. The intermediate frequency pulse participation modulation strategy includes a low participation modulation strategy, a medium participation modulation strategy, and a high participation modulation strategy. The adaptive determination and power control module for intermediate frequency pulse modulation parameters maps the intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by each intermediate frequency pulse participation modulation strategy to multiple intermediate frequency pulse modulation parameter sub-ranges based on a preset set of modulation parameter sub-ranges. Based on the deviation of the reaction sputtering operation state, the module determines the target intermediate frequency pulse modulation parameter sub-range and controls the output of the magnetron sputtering power supply according to the target intermediate frequency pulse modulation parameter sub-range.

[0014] Thirdly, this application provides an electronic device, comprising: Processor; and, Memory for storing the executable instructions of the processor; The processor is configured to perform any of the possible methods described in the first aspect by executing the executable instructions.

[0015] Fourthly, this application provides a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, are used to implement any of the possible methods described in the first aspect.

[0016] Compared with the prior art, this application has the following beneficial effects: This application provides an adaptive control method, system, device, and medium for magnetron sputtering power supplies. The method achieves closed-loop regulation of the discharge state of the magnetron sputtering power supply under reactive sputtering conditions by acquiring multi-source operating signals, classifying and evaluating the reactive sputtering operating state, and adaptively determining the intermediate frequency pulse participation modulation strategy. This enables the power supply output to be dynamically adjusted according to changes in the operating state, thereby effectively improving the operational stability of the magnetron sputtering process under reactive sputtering conditions and avoiding discharge fluctuation problems caused by fixed output or single parameter control.

[0017] Furthermore, this application transforms the continuous variation characteristics of the discharge state of the magnetron sputtering power supply into a control object that can be graded, evaluated, and finely adjusted by introducing an analysis window, a set of operating state deviations, and a set of modulation parameter sub-levels. Through the correspondence mechanism between the deviation index and the sub-level index, it achieves smooth selection of intermediate frequency pulse modulation parameters, reduces the secondary disturbances caused by modulation abrupt changes in the discharge process, and improves the reliability and controllability of the control process.

[0018] Furthermore, this application achieves coordinated operation of multi-source operating signal acquisition, operating status evaluation, modulation strategy determination, and power control functions through a modular structure, thereby realizing adaptive adjustment of the magnetron sputtering power supply output and improving the operational stability of the magnetron sputtering process under reactive sputtering conditions. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0020] Figure 1 This is a schematic flowchart illustrating an adaptive control method for a magnetron sputtering power supply according to an example embodiment of this application; Figure 2 This is a schematic flowchart illustrating the graded evaluation of reactive sputtering operation status according to an example embodiment of this application; Figure 3 This is a schematic flowchart illustrating the determination of an intermediate frequency pulse modulation strategy according to an example embodiment of this application; Figure 4 This is a schematic diagram illustrating the adaptive determination of intermediate frequency pulse modulation parameters and power supply control according to an example embodiment of this application; Figure 5 This is a schematic diagram of the structure of an adaptive control system for a magnetron sputtering power supply according to an example embodiment of this application; Figure 6 This is a schematic diagram of the structure of an electronic device according to an example embodiment of this application.

[0021] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0022] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0023] This embodiment proposes an adaptive control method, system, device, and medium for magnetron sputtering power supplies, applicable to magnetron sputtering processes under reactive sputtering conditions, such as reactive sputtering conditions where reactive gases are introduced for nitriding or oxidation during magnetron sputtering. This method is used to adaptively adjust the output of the magnetron sputtering power supply to improve the stability of reactive sputtering operation.

[0024] This embodiment does not directly detect or control the state of the target material or wafer surface. Instead, it takes the stability of the plasma discharge state during magnetron sputtering under reactive sputtering conditions as the control object. By collecting the output voltage signal, output current signal, and arc indication signal of the magnetron sputtering power supply, the current reactive sputtering operating state is evaluated. Based on the evaluation results, the participation ratio and duration of the intermediate frequency pulse in the output of the magnetron sputtering power supply are adaptively adjusted to intervene in the discharge behavior of the magnetron sputtering process, thereby improving the operating stability of the magnetron sputtering process under reactive sputtering conditions.

[0025] This embodiment achieves fine-tuning of the discharge stability of magnetron sputtering under reactive sputtering conditions without introducing additional process detection methods, suppressing arc generation and target surface reaction imbalance, thereby improving the stability of reactive sputtering operation and indirectly improving the uniformity of the deposited film.

[0026] It should be noted that the reactive sputtering operating state described in this application refers to the operating state exhibited by the plasma discharge behavior during magnetron sputtering under reactive sputtering conditions. It is a manifestation of the operating state of the magnetron sputtering process under specific operating conditions and is indirectly characterized by the voltage, current and arc indication signals on the output side of the magnetron sputtering power supply.

[0027] Figure 1 This is a schematic flowchart illustrating an adaptive control method for a magnetron sputtering power supply according to an example embodiment of this application. Figure 1As shown, the adaptive control method for magnetron sputtering power supply provided in this embodiment includes: Step S101: Acquisition of multi-source operating signals. For the magnetron sputtering process under reactive sputtering conditions, multi-source operating signals are acquired to characterize the reactive sputtering operating status.

[0028] In this step, multi-source runtime information includes: The output voltage and current signals of the magnetron sputtering power supply are used to characterize the basic characteristics of the discharge state of the magnetron sputtering power supply during the magnetron sputtering process. The output voltage and current signals are acquired by voltage detection circuit and current detection circuit set on the output side of the magnetron sputtering power supply.

[0029] Arc indication signal is used to characterize abnormal discharge behavior that occurs during magnetron sputtering under reactive sputtering conditions.

[0030] In this embodiment, the arc indication signal is not an independent sensor signal, but is obtained by detecting the output voltage and output current signals of the magnetron sputtering power supply.

[0031] Specifically, within a preset detection time window, the output voltage signal and output current signal are monitored in real time. When an instantaneous drop or jump in the output voltage signal exceeding the voltage change threshold is detected, or an instantaneous spike change in the output current signal exceeding the current change threshold is detected, an arc discharge event is determined to have occurred within the current detection time window, and a corresponding arc indication signal is generated.

[0032] Among them, the voltage change threshold and the current change threshold are preset values, which can be set or calibrated according to the rated parameters, process conditions or historical operating data of the magnetron sputtering power supply. This embodiment does not make specific limitations on them.

[0033] A process status identification signal is used to characterize the stage of the reactive sputtering process. The process status identification signal is provided by the semiconductor equipment control system and is used to indicate whether the reactive gas has been introduced into the magnetron sputtering cavity, so as to distinguish the different operating stages before and after the introduction of the reactive gas.

[0034] In this embodiment, when the reactive gas has been introduced into the magnetron sputtering cavity, the process status indicator signal is in the reactive sputtering enabled state; when the reactive gas has not yet been introduced into the magnetron sputtering cavity, the process status indicator signal is in the non-reactive sputtering state.

[0035] Step S102: Grading and evaluation of reactive sputtering operation status. Based on the multi-source operation signal, the reactive sputtering operation status is analyzed and classified into operation status categories including stable operation status, transitional operation status and abnormal trend operation status.

[0036] In this step, by comprehensively analyzing the operating information reflecting the output voltage variation characteristics, output current variation characteristics, and arc occurrence frequency characteristics of the magnetron sputtering power supply in the multi-source operating signals, the discharge state formed by the magnetron sputtering power supply under reactive sputtering conditions is determined, so that the current reactive sputtering operating state can be characterized in the form of discrete operating state categories, thereby providing a clear state basis for the selection of subsequent intermediate frequency pulse participation modulation strategies.

[0037] By classifying and evaluating the operating status of reactive sputtering, the continuous fluctuation characteristics of the discharge state during magnetron sputtering are transformed into operating status categories with clear semantics. This enables the determination of the intermediate frequency pulse modulation strategy to be carried out in a hierarchical manner based on the operating status category, avoiding unnecessary frequent switching of modulation strategies caused by instantaneous electrical parameter fluctuations, and improving the stability and reliability of magnetron sputtering power supply operation regulation under reactive sputtering conditions.

[0038] Step S103: Determine the intermediate frequency pulse participation modulation strategy. Select the corresponding intermediate frequency pulse participation modulation strategy based on the operating state category. The intermediate frequency pulse participation modulation strategy includes low participation modulation strategy, medium participation modulation strategy and high participation modulation strategy.

[0039] In this step, based on the reactive sputtering operating state category obtained in step S102, the operating state of the magnetron sputtering power supply under the current reactive sputtering condition is matched with the pre-set intermediate frequency pulse participation modulation strategy, so that the participation mode of the intermediate frequency pulse in the output of the magnetron sputtering power supply can be selected according to the operating state category, thereby limiting the allowable participation intensity range and participation duration range of the subsequent intermediate frequency pulse modulation parameter selection.

[0040] By establishing a correspondence between the operating state category and the intermediate frequency pulse participation modulation strategy, the intermediate frequency pulse participation modulation is transformed from a fixed mode to a hierarchical strategy control process based on the reactive sputtering operating state. This avoids over-modulation intervention when the reactive sputtering operating state is stable, and timely introduces modulation constraints with a higher degree of participation when the operating state is in a transitional or abnormal trend. This is beneficial to improving the operating stability and adjustment adaptability of the magnetron sputtering power supply under reactive sputtering conditions.

[0041] Step S104: Adaptive determination of intermediate frequency pulse modulation parameters and power supply control. Based on a preset set of modulation parameter sub-levels, the intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by each intermediate frequency pulse participation modulation strategy are mapped to multiple intermediate frequency pulse modulation parameter sub-levels. Based on the deviation of the reaction sputtering operation state, the target intermediate frequency pulse modulation parameter sub-level is determined, and the output of the magnetron sputtering power supply is controlled according to the target intermediate frequency pulse modulation parameter sub-level.

[0042] In this step, under the constraint of the determined intermediate frequency pulse participation modulation strategy, the intermediate frequency pulse participation ratio parameter and intermediate frequency pulse participation duration parameter are discretized and organized by the modulation parameter sub-level set. Based on the deviation of the reactive sputtering operation state, the corresponding target intermediate frequency pulse modulation parameter sub-level is selected from the modulation parameter sub-level set, so that the determination process of the intermediate frequency pulse modulation parameter is limited to the parameter range allowed by the strategy.

[0043] By limiting the determination process of intermediate frequency pulse modulation parameters to the set of modulation parameter sub-levels corresponding to the intermediate frequency pulse participation modulation strategy, and further combining the deviation of reactive sputtering operation state for fine selection, adaptive adjustment of the intermediate frequency pulse participation ratio and participation duration at the parameter level is achieved. This ensures control response sensitivity while avoiding secondary disturbances caused by sudden changes in modulation parameters to the magnetron sputtering discharge process, thereby improving the stability and controllability of magnetron sputtering power supply output control under reactive sputtering conditions.

[0044] Figure 2 This is a schematic flowchart illustrating the graded evaluation of reactive sputtering operation status according to an example embodiment of this application. Figure 2 As shown, the method for grading and evaluating the operating status of reactive sputtering provided in this embodiment includes: Step S1021: Analyze the multi-source operating signal within a preset analysis window and extract operating features to characterize the discharge state formed by the output of the magnetron sputtering power supply.

[0045] In this step, the running characteristics include: The output voltage variation characteristic is determined by statistically analyzing the sampled values ​​of the output voltage signal within a preset analysis window. The difference between the maximum and minimum values ​​of the output voltage signal within this analysis window is calculated, and this difference serves as the output voltage variation characteristic characterizing the degree of output voltage fluctuation. The analysis window serves as a unified calculation time reference for reflecting sputtering operation-related characteristics and is used for statistical analysis of the voltage, current, and arc indication signals on the output side of the magnetron sputtering power supply. The specific length and update method of the analysis window can be set according to actual operating conditions; this embodiment does not impose specific limitations on this.

[0046] The output current variation characteristic is obtained by statistically analyzing the sampled values ​​of the output current signal within a preset analysis window, and calculating the difference between the maximum and minimum values ​​of the output current signal within the analysis window. This difference is used as the output current variation characteristic to characterize the degree of output current fluctuation.

[0047] The discharge stability index is generated based on the output voltage and output current variation characteristics within a preset analysis window. It is used to comprehensively characterize the stability of the current reactive sputtering operation. When the output voltage change characteristic is less than or equal to the preset voltage change threshold, and the output current change characteristic is less than or equal to the current change threshold, the discharge stability index characteristic is identified as stable discharge state. Otherwise, the discharge stability index is characterized by an unstable discharge state.

[0048] It should be noted that the preset voltage change threshold and current change threshold can be set or calibrated according to the equipment model, process conditions or historical operating data, and this embodiment does not impose any restrictions.

[0049] The frequency characteristics of electric arc occurrence are analyzed by counting the number of times the electric arc indicator signal appears within a preset analysis window.

[0050] In addition, in this step, a process status indicator signal corresponding to the analysis window is also acquired. The process status indicator signal is provided by the semiconductor equipment control system and is used to indicate whether the reactive gas in the current analysis window has been introduced into the sputtering cavity.

[0051] Step S1022: Based on the operating characteristics and the corresponding process status identification signal, determine the reactive sputtering operating status within the current analysis window and classify it into operating status categories including stable operating status, transitional operating status, and abnormal trend operating status.

[0052] In this step, the operating status category of reactive sputtering is determined only when the process status indicator signal indicates that the current analysis window is in the reactive sputtering enabled state.

[0053] The operating status categories include stable operating status, transitional operating status, and abnormal trend operating status. Specifically: When the output voltage change characteristic is less than or equal to the preset voltage change threshold, the output current change characteristic is less than or equal to the preset current change threshold, the discharge stability index characteristic is that the discharge state is stable, and the arc occurrence frequency characteristic is less than or equal to the arc frequency threshold, it is determined to be a stable operating state.

[0054] The system is considered to be in a transitional operating state when any of the following conditions are met: The output voltage change characteristic is greater than the voltage change threshold and less than or equal to the preset voltage anomaly threshold; The output current change characteristic is greater than the current change threshold and less than or equal to the preset current abnormality threshold; The discharge stability index is characterized by an unstable discharge state; The frequency of the electric arc is greater than the electric arc frequency threshold but less than or equal to the preset electric arc anomaly threshold.

[0055] An abnormal trend in operation is determined when any of the following conditions are met: The output voltage variation characteristics exceed the preset voltage anomaly threshold; The output current variation characteristics are greater than the preset current anomaly threshold; The frequency of electric arc occurrences exceeds the preset electric arc anomaly threshold.

[0056] By using the above method, the reactive sputtering operation status is mapped to the corresponding intermediate frequency pulse modulation strategy according to the current operation status category, thereby providing a strategy basis for determining the sub-level of the target intermediate frequency pulse modulation parameter.

[0057] Figure 3 This is a schematic flowchart illustrating the determination of an intermediate frequency pulse modulation strategy according to an example embodiment of this application. Figure 3 As shown, the determination of the intermediate frequency pulse modulation strategy provided in this embodiment includes: Step S1031: Construct an intermediate frequency pulse participation modulation strategy.

[0058] In this step, the intermediate frequency (IF) pulse participation modulation strategy is used to define the participation mode of the IF pulse in the magnetron sputtering power supply output under reactive sputtering conditions. The IF pulse participation modulation strategy is preset and stored by the semiconductor device control system during the system configuration phase.

[0059] Intermediate frequency pulse participation modulation strategies include three types: low participation modulation strategy, medium participation modulation strategy, and high participation modulation strategy.

[0060] Low-participation, medium-participation, and high-participation modulation strategies all include the participation ratio range and duration range of the intermediate frequency (IF) pulse. Specifically: The participation ratio range of the intermediate frequency pulse is used to limit the allowable participation intensity range of the intermediate frequency pulse relative to the DC output in the magnetron sputtering power supply output.

[0061] The participation duration range of the intermediate frequency pulse is used to limit the time range within which the intermediate frequency pulse is allowed to participate in output modulation within the current analysis window.

[0062] The intermediate frequency pulse participation ratio range corresponding to the low participation modulation strategy is the first preset ratio range, and the intermediate frequency pulse participation duration range is the first preset time range. The intermediate frequency pulse participation ratio range corresponding to the intermediate frequency participation modulation strategy is the second preset ratio range, and the intermediate frequency pulse participation duration range is the second preset time range. The intermediate frequency pulse participation ratio range corresponding to the high participation modulation strategy is the third preset ratio range, and the intermediate frequency pulse participation duration range is the third preset time range.

[0063] Wherein, the first preset ratio range is smaller than the second preset ratio range, and the second preset ratio range is smaller than the third preset ratio range; The first preset time interval is less than the second preset time interval, and the second preset time interval is less than the third preset time interval.

[0064] It should be noted that the first preset ratio range, the second preset ratio range, the third preset ratio range, the first preset time range, the second preset time range, and the third preset time range are all preset values. They can be set or adjusted according to the operational constraints of the magnetron sputtering power supply, the requirements of the reactive sputtering process on discharge stability and target surface condition, and the range of stable operating parameters obtained during the historical operation or debugging and calibration of the equipment. This embodiment does not limit the specific values ​​of the preset values.

[0065] Step S1032: Select the corresponding intermediate frequency pulse to participate in the modulation strategy according to the operating state category.

[0066] In this embodiment, it includes: When the operating state category is stable, a low-participation modulation strategy is selected; When the operating state category is transitional operating state, a medium participation modulation strategy is selected; When the operating state category is an abnormal trend operating state, a high participation modulation strategy is selected.

[0067] In this way, the operating state category is directly mapped to a specific executable intermediate frequency pulse modulation strategy, providing clear strategy constraints for the subsequent fine determination of intermediate frequency pulse modulation parameters.

[0068] Figure 4 This is a schematic diagram illustrating the adaptive determination of intermediate frequency pulse modulation parameters and power supply control according to an example embodiment of this application. Figure 4 As shown, the adaptive determination of intermediate frequency pulse modulation parameters and power supply control method provided in this embodiment includes: Step S1041: Configure a corresponding set of modulation parameter sub-levels for each intermediate frequency pulse participating in the modulation strategy. Each set of modulation parameter sub-levels includes multiple preset intermediate frequency pulse modulation parameter sub-levels.

[0069] In this step, the modulation parameter sub-sets are pre-configured parameter sets, stored in advance in the form of parameter tables or parameter mapping relationships. The modulation parameter sub-sets include three categories: low-participation modulation parameter sub-sets, medium-participation modulation parameter sub-sets, and high-participation modulation parameter sub-sets, each corresponding one-to-one with a low-participation modulation strategy, a medium-participation modulation strategy, and a high-participation modulation strategy, respectively. These sets are used to define the range of selectable intermediate frequency pulse modulation parameter sub-sets under different intermediate frequency pulse participation modulation strategies.

[0070] The low-participation modulation parameter sub-range set, the medium-participation modulation parameter sub-range set, and the high-participation modulation parameter sub-range set each include N intermediate frequency pulse modulation parameter sub-ranges. Here, N is a preset positive integer. Each intermediate frequency pulse modulation parameter sub-range includes: The intermediate frequency pulse participation ratio parameter is used to limit the participation ratio of the intermediate frequency pulse relative to the DC output in the magnetron sputtering power supply output, so as to characterize the influence of the intermediate frequency pulse on the discharge state under reactive sputtering conditions.

[0071] The intermediate frequency pulse participation duration parameter is used to limit the duration for which the intermediate frequency pulse is allowed to participate in output modulation within the current analysis window, so as to characterize the degree of participation of the intermediate frequency pulse in the time dimension.

[0072] The intermediate frequency pulse participation ratio parameter and the intermediate frequency pulse participation duration parameter are both discrete control parameter values ​​preset by the semiconductor equipment control system. They can be configured according to the operating capability of the magnetron sputtering power supply, the stability requirements of the reactive sputtering process, or the historical debugging and calibration results. In this embodiment, their specific values ​​are not limited.

[0073] Step S1042: Based on the selected intermediate frequency pulse participation modulation strategy, determine the target modulation parameter sub-level set, and perform consistency verification on the intermediate frequency pulse modulation parameter sub-levels in the target modulation parameter sub-level set within the intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by the intermediate frequency pulse participation modulation strategy.

[0074] In this step, based on the determined intermediate frequency pulse participation modulation strategy, a target modulation parameter sub-set corresponding to the intermediate frequency pulse participation modulation strategy is selected from a pre-configured set of modulation parameter sub-sets, including: When the selected intermediate frequency pulse participation modulation strategy is a low participation modulation strategy, the target modulation parameter sub-level set is the low participation modulation parameter sub-level set. When the selected intermediate frequency pulse participation modulation strategy is a medium participation modulation strategy, the target modulation parameter sub-level set is a medium participation modulation parameter sub-level set. When the selected intermediate frequency pulse participation modulation strategy is a high participation modulation strategy, the target modulation parameter sub-level set is the high participation modulation parameter sub-level set.

[0075] After selecting the corresponding target modulation parameter sub-range set, the consistency of the intermediate frequency pulse participation ratio parameter and the intermediate frequency pulse participation duration parameter of the target modulation parameter sub-range set is verified, including: Determine whether the intermediate frequency pulse participation ratio parameter falls within the intermediate frequency pulse participation ratio range defined by the current intermediate frequency pulse participation modulation strategy; Determine whether the intermediate frequency pulse participation duration parameter falls within the intermediate frequency pulse participation duration range defined by the current intermediate frequency pulse participation modulation strategy; When the intermediate frequency pulse participation ratio parameter falls within the intermediate frequency pulse participation ratio range and the intermediate frequency pulse participation duration parameter falls within the intermediate frequency pulse participation duration range, the intermediate frequency pulse modulation parameter sub-level is determined to be a valid sub-level. Otherwise, the intermediate frequency pulse modulation parameter sub-range is determined to be an invalid sub-range.

[0076] For the intermediate frequency pulse modulation parameter sub-levels that are determined to be valid sub-levels, they are sorted in order of increasing intermediate frequency pulse participation ratio parameter, and a corresponding sub-level index is generated for each intermediate frequency pulse modulation parameter sub-level based on the sorting result.

[0077] The sub-position index is used to establish a correspondence with the deviation of the reactive sputtering operating status.

[0078] It should be noted that when an invalid sub-range exists, the preset default intermediate frequency pulse modulation parameter sub-range is selected for output control of the magnetron sputtering power supply. The preset default intermediate frequency pulse modulation parameter sub-range is a safety control parameter pre-set during the configuration phase of the semiconductor equipment control system. It is used to ensure that the magnetron sputtering power supply can operate stably when the modulation parameter configuration is abnormal or does not meet the constraints of the current intermediate frequency pulse participation modulation strategy.

[0079] The sub-level index is used to characterize the relative participation intensity position of the intermediate frequency pulse modulation parameter sub-level within the target modulation parameter sub-level set.

[0080] The sub-level index is a positive integer starting from 1 and incrementing sequentially. It is numbered in order of increasing intermediate frequency pulse participation ratio parameter, so that the larger the sub-level index value, the higher the corresponding intermediate frequency pulse participation intensity.

[0081] The sub-gap index is used to match the index with the deviation of the reactive sputtering operating state in subsequent steps, so as to select the corresponding target intermediate frequency pulse modulation parameter sub-gap from the modulation parameter sub-gap set according to the index correspondence.

[0082] Step S1043: Based on the operating characteristics, calculate the deviation of the reaction sputtering operating state within the current analysis window.

[0083] In this step, the deviation of the reactive sputtering operating state is calculated based on the characteristics of output voltage change, output current change, and arc occurrence frequency.

[0084] The reactive sputtering operating state deviation is used to characterize the overall deviation of the discharge state of the magnetron sputtering power supply under the current reactive sputtering condition from the preset reference operating state (including preset voltage change characteristic threshold, current change characteristic threshold and arc occurrence frequency characteristic threshold). The larger the value of the reactive sputtering operating state deviation, the higher the fluctuation of the discharge state of the magnetron sputtering power supply or the more obvious the abnormal trend.

[0085] The formula for calculating the deviation of reactive sputtering operating conditions is:

[0086] Where ΔV represents the output voltage variation characteristic; ΔI represents the output current variation characteristic; F arc This represents the frequency characteristics of electric arc occurrence; V th I th and F th The preset threshold values ​​are: voltage change characteristic threshold, current change characteristic threshold, and arc occurrence frequency characteristic threshold; ω V ω I and ω A The preset weights are the voltage change characteristic weights, current change characteristic weights, and arc occurrence frequency characteristic weights.

[0087] It should be noted that the preset voltage change characteristic threshold, current change characteristic threshold, arc occurrence frequency characteristic threshold, voltage change characteristic weight, current change characteristic weight, and arc occurrence frequency characteristic weight can be set or calibrated according to the equipment model, reactive sputtering process conditions, or historical operating data. This embodiment does not limit their specific values.

[0088] Step S1044: Based on the deviation of the reactive sputtering operation state and the target modulation parameter sub-level set, determine the target intermediate frequency pulse modulation parameter sub-level according to the preset grading rules.

[0089] In this step, the target intermediate frequency pulse modulation parameter sub-range is determined, including: Based on the established intermediate frequency pulse participation modulation strategy, obtain the target modulation parameter sub-level set corresponding to the intermediate frequency pulse participation modulation strategy; The effective range of the deviation D of the reactive sputtering operation state is divided into N deviation regions according to the preset classification rules; The N deviation regions are arranged in ascending order, and a corresponding deviation region index is assigned to each deviation region. The deviation of the reactive sputtering operating state is compared with N deviation regions respectively; When the deviation of the reactive sputtering operation state falls into a deviation region, the deviation index of the reactive sputtering operation state deviation is the deviation region index of the deviation region. Based on the correspondence between the deviation index and the sub-gear index (in this embodiment, when the deviation index and the sub-gear index are the same), the intermediate frequency pulse modulation parameter sub-gear corresponding to the deviation index is selected from the target modulation parameter sub-gear set; The intermediate frequency pulse participation ratio parameter and the intermediate frequency pulse participation duration parameter in the intermediate frequency pulse modulation parameter sub-level are determined as the target intermediate frequency pulse modulation parameter.

[0090] The effective range of the deviation of the reactive sputtering operation status D can be obtained based on equipment capacity constraints, reactive sputtering process conditions, historical operation data statistics, or the debugging and calibration stage. This embodiment does not limit the specific value of the effective range.

[0091] The grading rules are pre-defined grading rules used to divide the effective range of values ​​for the deviation D of the reactive sputtering operation state into multiple discrete deviation regions.

[0092] The grading rules can be set based on the operational capability constraints of the magnetron sputtering power supply, the discharge stability requirements of the reactive sputtering process, the statistical distribution characteristics of historical operating data, or empirical parameters obtained during the debugging and calibration phase.

[0093] In one implementation, the grading rule can use an equal interval division method; in another implementation, a non-equal interval division method can also be used, such as division based on empirical thresholds, statistical quantiles, or segmented mapping relationships. This embodiment only requires that the grading rule can divide the effective value range of the reactive sputtering operating state deviation into no less than N deviation regions for generating the corresponding reactive sputtering operating state deviation index, and does not limit the specific division method.

[0094] It should be noted that the deviation region index is a positive integer starting from 1 and increasing sequentially, and its value range is consistent with the value range of the sub-level index in the target modulation parameter sub-level set.

[0095] The deviation index of the reactive sputtering operation status deviation is determined by the deviation area index, so there is a one-to-one correspondence between the deviation index and the sub-gear index.

[0096] The deviation region index is used to characterize the degree of deviation of the current reactive sputtering operation state from the stable state; a larger index value indicates a higher degree of deviation. In this embodiment, when the deviation of the reactive sputtering operation state falls into the corresponding deviation region, the deviation region index serves as the deviation index for that reactive sputtering operation state deviation and is used in the selection of modulation parameters in subsequent processes.

[0097] The size of the sub-level index is used to characterize the relative participation intensity level of the intermediate frequency pulse modulation parameter sub-level in the current modulation parameter sub-level set. The larger the index value of the sub-level index, the higher the participation intensity of the intermediate frequency pulse.

[0098] By matching the reactive sputtering operating state deviation index with the sub-gear index, the level of the reactive sputtering operating state deviation is made consistent with the participation intensity level of the intermediate frequency pulse modulation parameter, thereby enabling the selection of intermediate frequency pulse modulation parameter sub-gear based on the deviation level.

[0099] It should be further clarified that the intermediate frequency pulse participation ratio parameter and the intermediate frequency pulse participation duration parameter in the intermediate frequency pulse modulation parameter sub-level are both preset discrete parameter values. The reactive sputtering operating state deviation D is only used to determine the specific intermediate frequency pulse modulation parameter sub-level within a subset of the selected modulation parameter sub-level set, and does not participate in the classification of operating state categories or the selection of intermediate frequency pulse participation modulation strategies. In this way, the scope of the reactive sputtering operating state deviation is limited to the fine selection level of the intermediate frequency pulse modulation parameter sub-level, avoiding frequent switching of the intermediate frequency pulse participation modulation strategy caused by short-term fluctuations in the reactive sputtering operating state deviation, which is beneficial to improving the stability of the intermediate frequency pulse modulation process. Therefore, this embodiment achieves fine adjustment of the intermediate frequency pulse under reactive sputtering conditions while maintaining the stability of the intermediate frequency pulse participation modulation strategy.

[0100] Step S1045: Control the output of the magnetron sputtering power supply based on the target intermediate frequency pulse modulation parameter sub-level.

[0101] In this step, based on the intermediate frequency pulse participation ratio parameter and intermediate frequency pulse participation duration parameter contained in the target intermediate frequency pulse modulation parameter sub-level, the participation mode of the intermediate frequency pulse in the magnetron sputtering power supply output is set so that the magnetron sputtering power supply outputs according to the modulation mode corresponding to the intermediate frequency pulse modulation parameter sub-level within the current analysis window.

[0102] Specifically, the participation ratio of the intermediate frequency pulse in the output of the magnetron sputtering power supply is determined according to the intermediate frequency pulse participation ratio parameter of the target intermediate frequency pulse modulation parameter sub-level; the participation duration of the intermediate frequency pulse in the current analysis window is determined according to the intermediate frequency pulse participation duration parameter of the target intermediate frequency pulse modulation parameter sub-level; and the output of the magnetron sputtering power supply is controlled based on the above parameters.

[0103] The above method enables adaptive adjustment of the proportion and duration of the intermediate frequency pulse in the output of the magnetron sputtering power supply under reactive sputtering conditions, thereby improving the stability of the discharge state formed by the magnetron sputtering power supply under reactive sputtering conditions.

[0104] Figure 5This is a schematic diagram of the structure of an adaptive control system for a magnetron sputtering power supply according to an example embodiment of this application. Figure 5 As shown, the magnetron sputtering power supply adaptive control system 500 provided in this embodiment includes: a multi-source operating signal acquisition module 510, a reactive sputtering operating status hierarchical evaluation module 520, an intermediate frequency pulse participation modulation strategy module 530, and an intermediate frequency pulse modulation parameter adaptive determination and power control module 540.

[0105] The multi-source operation signal acquisition module 510 acquires multi-source operation signals to characterize the operation status of the magnetron sputtering process under reactive sputtering conditions. The reactive sputtering operation status classification and evaluation module 520 analyzes the reactive sputtering operation status based on the multi-source operation signal and classifies it into operation status categories including stable operation status, transitional operation status and abnormal trend operation status. The intermediate frequency pulse participation modulation strategy module 530 selects a corresponding intermediate frequency pulse participation modulation strategy based on the operating state category. The intermediate frequency pulse participation modulation strategy includes a low participation modulation strategy, a medium participation modulation strategy, and a high participation modulation strategy. The adaptive determination and power control module 540 for intermediate frequency pulse modulation parameters maps the intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by each intermediate frequency pulse participation modulation strategy to multiple intermediate frequency pulse modulation parameter sub-levels based on a preset set of modulation parameter sub-levels. Based on the deviation of the reaction sputtering operation state, it determines the target intermediate frequency pulse modulation parameter sub-level and controls the output of the magnetron sputtering power supply according to the target intermediate frequency pulse modulation parameter sub-level.

[0106] Figure 6 This is a schematic diagram of the structure of an electronic device according to an example embodiment of this application. For example... Figure 6 As shown, the electronic device 600 provided in this embodiment includes: a processor 601 and a memory 602; wherein: Memory 602 is used to store computer programs, and the memory may also be flash memory.

[0107] Processor 601 is used to execute the execution instructions stored in the memory to implement the various steps in the above method. For details, please refer to the relevant descriptions in the preceding method embodiments.

[0108] Alternatively, the memory 602 can be either standalone or integrated with the processor 601.

[0109] When the memory 602 is a device independent of the processor 601, the electronic device 600 may further include: Bus 603 is used to connect the memory 602 and the processor 601.

[0110] This embodiment also provides a readable storage medium storing a computer program, which, when executed by at least one processor of an electronic device, enables the electronic device to perform the methods provided in the various embodiments described above.

[0111] This embodiment also provides a program product including a computer program stored in a readable storage medium. At least one processor of an electronic device can read the computer program from the readable storage medium, and the at least one processor executes the computer program to cause the electronic device to perform the methods provided in the various embodiments described above.

[0112] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the foregoing claims.

[0113] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope.

Claims

1. An adaptive control method for a magnetron sputtering power supply, characterized in that, include: The acquisition of multi-source operating signals is aimed at the magnetron sputtering process under reactive sputtering conditions, and the acquisition of multi-source operating signals to characterize the reactive sputtering operating status. The reactive sputtering operation status is graded and evaluated based on the multi-source operation signal. The reactive sputtering operation status is analyzed and classified into operation status categories including stable operation status, transitional operation status and abnormal trend operation status. The determination of the intermediate frequency pulse participation modulation strategy is based on the operation state category, and the corresponding intermediate frequency pulse participation modulation strategy is selected. The intermediate frequency pulse participation modulation strategy includes low participation modulation strategy, medium participation modulation strategy and high participation modulation strategy. The adaptive determination of intermediate frequency pulse modulation parameters and power supply control are based on a preset set of modulation parameter sub-levels. The intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by each intermediate frequency pulse participation modulation strategy are mapped to multiple intermediate frequency pulse modulation parameter sub-levels. Based on the deviation of the reaction sputtering operation state, the target intermediate frequency pulse modulation parameter sub-level is determined, and the output of the magnetron sputtering power supply is controlled according to the target intermediate frequency pulse modulation parameter sub-level.

2. The adaptive control method for magnetron sputtering power supply according to claim 1, characterized in that, The graded evaluation of the reactive sputtering operation status includes: The multi-source operating signals are analyzed within a preset analysis window to extract operating features that characterize the discharge state formed by the output of the magnetron sputtering power supply. Based on the aforementioned operating characteristics and the corresponding process status identification signals, the reactive sputtering operating status within the current analysis window is determined and classified into operating status categories including stable operating status, transitional operating status, and abnormal trend operating status.

3. The adaptive control method for magnetron sputtering power supply according to claim 1, characterized in that, The low-participation modulation strategy, medium-participation modulation strategy, and high-participation modulation strategy all include the participation ratio range of the intermediate frequency pulse and the participation duration range of the intermediate frequency pulse, wherein: The intermediate frequency pulse participation ratio range corresponding to the low participation modulation strategy is the first preset ratio range, and the intermediate frequency pulse participation duration range is the first preset time range. The intermediate frequency pulse participation ratio range corresponding to the intermediate participation modulation strategy is the second preset ratio range, and the intermediate frequency pulse participation duration range is the second preset time range. The intermediate frequency pulse participation ratio range corresponding to the high participation modulation strategy is the third preset ratio range, and the intermediate frequency pulse participation duration range is the third preset time range. Wherein, the first preset ratio range is smaller than the second preset ratio range, and the second preset ratio range is smaller than the third preset ratio range; The first preset time interval is shorter than the second preset time interval, and the second preset time interval is shorter than the third preset time interval.

4. The adaptive control method for magnetron sputtering power supply according to claim 1, characterized in that, The adaptive determination of the intermediate frequency pulse modulation parameters and power supply control include: For each intermediate frequency pulse participating in the modulation strategy, a corresponding set of modulation parameter sub-levels is configured, and each set of modulation parameter sub-levels includes multiple preset intermediate frequency pulse modulation parameter sub-levels; Based on the selected intermediate frequency pulse participation modulation strategy, a target modulation parameter sub-level set is determined. Within the intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by the intermediate frequency pulse participation modulation strategy, the consistency of the intermediate frequency pulse modulation parameter sub-levels in the target modulation parameter sub-level set is verified. Based on operational characteristics, calculate the deviation of the reactive sputtering operational state within the current analysis window; Based on the deviation of the reactive sputtering operation state and the target modulation parameter sub-level set, the target intermediate frequency pulse modulation parameter sub-level is determined according to the preset classification rules; The output of the magnetron sputtering power supply is controlled based on the target intermediate frequency pulse modulation parameter sub-level.

5. The adaptive control method for magnetron sputtering power supply according to claim 1, characterized in that, The deviation of the reactive sputtering operating state is calculated based on the characteristics of output voltage change, output current change, and arc occurrence frequency. The reactive sputtering operating state deviation is used to characterize the overall deviation of the discharge state of the magnetron sputtering power supply from the preset reference operating state under the current reactive sputtering condition. The larger the value of the reactive sputtering operating state deviation, the higher the fluctuation of the discharge state of the magnetron sputtering power supply or the more obvious the abnormal trend.

6. The adaptive control method for magnetron sputtering power supply according to claim 4, characterized in that, After determining the target modulation parameter sub-level set, a corresponding sub-level index is generated for the intermediate frequency pulse modulation parameter sub-level in the target modulation parameter sub-level set; The sub-gear index is used to establish a correspondence with the deviation of the reactive sputtering operating state.

7. The adaptive control method for magnetron sputtering power supply according to claim 1, characterized in that, Determining the target intermediate frequency pulse modulation parameter sub-level includes: Based on the established intermediate frequency pulse participation modulation strategy, obtain the target modulation parameter sub-level set corresponding to the intermediate frequency pulse participation modulation strategy; The effective range of the deviation of the reactive sputtering operation state is divided into N deviation regions according to a preset grading rule; The N deviation regions are arranged in ascending order, and a corresponding deviation region index is assigned to each deviation region. The deviation of the reactive sputtering operating state is compared with N deviation regions respectively; When the deviation of the reactive sputtering operation state falls into a deviation region, the deviation index of the reactive sputtering operation state deviation is the deviation region index of the deviation region. Based on the correspondence between the deviation index and the sub-gear index, the intermediate frequency pulse modulation parameter sub-gear corresponding to the deviation index is selected from the target modulation parameter sub-gear set; The intermediate frequency pulse participation ratio parameter and the intermediate frequency pulse participation duration parameter in the intermediate frequency pulse modulation parameter sub-level are determined as the target intermediate frequency pulse modulation parameter.

8. An adaptive control system for a magnetron sputtering power supply, characterized in that, include: The multi-source operation signal acquisition module acquires multi-source operation signals to characterize the reactive sputtering operation status of the magnetron sputtering process under reactive sputtering conditions. The reactive sputtering operation status classification and evaluation module analyzes the reactive sputtering operation status based on the multi-source operation signal and classifies it into operation status categories including stable operation status, transitional operation status and abnormal trend operation status. The intermediate frequency pulse participation modulation strategy module selects a corresponding intermediate frequency pulse participation modulation strategy based on the operating state category. The intermediate frequency pulse participation modulation strategy includes a low participation modulation strategy, a medium participation modulation strategy, and a high participation modulation strategy. The adaptive determination and power control module for intermediate frequency pulse modulation parameters maps the intermediate frequency pulse participation ratio range and intermediate frequency pulse participation duration range defined by each intermediate frequency pulse participation modulation strategy to multiple intermediate frequency pulse modulation parameter sub-ranges based on a preset set of modulation parameter sub-ranges. Based on the deviation of the reaction sputtering operation state, the module determines the target intermediate frequency pulse modulation parameter sub-range and controls the output of the magnetron sputtering power supply according to the target intermediate frequency pulse modulation parameter sub-range.

9. An electronic device, characterized in that, include: processor; as well as, Memory for storing the executable instructions of the processor; The processor is configured to execute the method of any one of claims 1 to 7 by executing the executable instructions.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which, when executed by a processor, are used to implement the method as described in any one of claims 1 to 7.

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