X-ray imaging in-situ photo-thermal coupling characterization device and imaging method for wafer-level packaging chip

Abstract

The invention relates to an X-ray imaging in-situ photo-thermal coupling characterization device of a wafer level packaging chip, the device comprises a physical control assembly, a heating assembly and an optical assembly, the physical control assembly comprises a base, a lifting rod, a rotating table, a sample bin and a sample table; the heating assembly comprises a bin cover with an infrared heating plate, an infrared temperature probe and an infrared heating temperature controller; the bin cover is matched with the sample bin; the optical assembly comprises an adjustable laser, a silica fiber, a focusing lens and an optical power meter; the device can be used in cooperation with a 4D X-ray CT system, and three-dimensional dynamic evolution imaging of the internal structure of a packaged chip under the photo-thermal effect is achieved through dynamic scanning and temperature control dimming control. Compared with the prior art, the device has the advantages of photo-thermal coupling in-situ synchronous control, photo-thermal decoupling accurate adjustment, parameter closed-loop stable control, large-size sample compatibility, convenience in dynamic evolution observation and the like.

Description

Technical Field

[0001] This invention relates to the field of chip inspection, and in particular to an X-ray imaging in-situ photothermal coupling characterization device and imaging method for wafer-level packaged chips. Background Technology

[0002] As integrated circuit (IC) packaging technology advances towards higher density, miniaturization, and three-dimensional heterogeneous integration, the internal structure of chips is becoming increasingly complex. This leads to a significant increase in the coupling effects of multiple physical fields, including heat, stress, electric fields, and optical fields, during operation. These synergistic effects result in problems such as thermal expansion mismatch, stress concentration, metal migration, and abnormal carrier behavior at material interfaces, profoundly impacting the long-term reliability and performance stability of chips. Therefore, achieving in-situ non-destructive characterization of the multi-physical field coupling behavior within integrated circuits has become a key scientific problem in the field of advanced packaging reliability engineering.

[0003] Existing methods for characterizing thermal stress and failure, such as scanning electron microscopy (SEM) and infrared thermography (IR Thermography), can reveal certain structural and thermal stress information, but they usually have shortcomings such as being highly destructive, having limited spatial resolution, and being unable to observe the dynamic evolution process in real time, making it difficult to meet the high-precision dynamic detection requirements for complex three-dimensional encapsulated structures.

[0004] In recent years, 4D X-ray computed tomography (4D X-ray CT), which introduces a time dimension into the three-dimensional spatial dimension, enables continuous and non-destructive observation of structural changes over time, providing a new approach to studying the dynamic evolution of integrated circuit packaging structures under high temperature and stress. By combining with in-situ devices, this technology can, to a certain extent, achieve three-dimensional dynamic reconstruction of the internal structure of chips, thereby revealing the spatiotemporal evolution of the failure process.

[0005] However, existing in-situ characterization devices based on 4D X-ray CT mostly focus on single-field measurements of thermodynamic behavior, and still have significant limitations in detecting key physical processes such as changes in optical properties. Specifically, current devices typically only have heating functions and cannot comprehensively reflect the multi-physics coupling characteristics of chips under combined operating conditions such as high temperature, high pressure, electric field, and illumination. Patent CN113871313B discloses a chip detection system and detection method. The detection system includes: a sample stage for supporting the chip; an X-ray imaging device configured to obtain X-ray images of the chip; a control device configured to determine the position information of a target region in the chip based on the X-ray image; and a local processing device configured to generate an energy beam and focus the energy beam onto the chip for local processing. However, it still has design deficiencies such as photothermal coupling control, parameter closed-loop control, large-size sample compatibility, and dynamic evolution observation, which cannot meet the reliability analysis requirements of chips under photothermal multi-physics fields.

[0006] Therefore, those skilled in the art urgently desire to develop a detection system capable of in-situ simultaneous optical and thermal characterization in a multi-physics environment. This system can achieve dynamic three-dimensional imaging of controllable temperature field and light intensity on large-size wafer-level packaged chips, providing a new technological path for revealing the multi-physics failure mechanism and reliability optimization of complex packaging structures. Summary of the Invention

[0007] The purpose of this invention is to overcome the shortcomings of the prior art and provide an X-ray imaging in-situ photothermal coupling characterization device and imaging method for wafer-level packaged chips that achieves in-situ synchronous control of photothermal coupling, precise adjustment of photothermal decoupling, stable closed-loop control of parameters, and has the ability to accommodate large-size samples, dynamic evolution observation function and modular adaptability.

[0008] The objective of this invention can be achieved through the following technical solutions: An in-situ photothermal coupling characterization device for X-ray imaging of a wafer-level packaged chip includes a physical control component, a heating component, and an optical component, wherein... The physical control component includes a base, a lifting rod, a rotating stage, a sample chamber, and a sample stage. The lifting rod connects the base and the rotating stage. The sample chamber is disposed on the rotating stage, and the sample stage is located inside the sample chamber to accommodate the packaged chip sample under test. The heating assembly includes a chamber cover with an infrared heating plate, an infrared temperature probe, and an infrared heating temperature controller. The chamber cover is matched with the sample chamber. The infrared heating temperature controller is connected to the plate-shaped infrared heater and the infrared temperature probe, respectively. The infrared temperature probe is set on the chamber cover. The optical components include an adjustable laser, a quartz fiber, a focusing lens, and an optical power meter. The quartz fiber is connected to the adjustable laser and extends into the sample chamber. The focusing lens is located at the light-emitting end of the quartz fiber. The optical power meter is electrically connected to the adjustable laser.

[0009] Furthermore, the adjustable laser is a low-thermal-effect laser source. One end of the quartz optical fiber is connected to the adjustable laser, and the other end enters the sample chamber through the internal channel of the lifting rod and is fixed to the inner wall of the sample chamber, facing the sample.

[0010] Furthermore, the sample chamber is made of high-temperature resistant non-metallic material to avoid attenuation interference with X-ray imaging.

[0011] Furthermore, the sample chamber is made of alumina ceramic or quartz.

[0012] Furthermore, the optical power meter is installed above the sample chamber or on the chamber cover, and can provide real-time feedback on the optical power value inside the chamber, forming a closed-loop control of the optical power.

[0013] Furthermore, the rotating stage can achieve continuous rotation from 0 to 360° with a rotation accuracy better than ±0.1°, which facilitates multi-angle imaging with X-ray CT systems.

[0014] Furthermore, the quartz optical fiber is a multi-core fiber bundle and is made of high-temperature resistant material, with a core diameter of less than or equal to 200μm, in order to improve the uniformity of illumination.

[0015] Furthermore, the wavelength range of the adjustable laser is 400nm to 1100nm, and the output power is continuously adjustable within the range of 0 to 2W, so as to achieve controllable light intensity without significantly affecting the sample temperature.

[0016] Furthermore, a set distance is maintained between the light-emitting end of the quartz fiber and the sample surface, and the incident angle of the beam is adjustable to avoid the laser light irradiation having a significant impact on the overall temperature of the sample.

[0017] Furthermore, the optical power meter is electrically connected to the adjustable laser.

[0018] Furthermore, the sample stage is adapted to a maximum sample size of 8-12 inches.

[0019] Furthermore, the infrared heating temperature controller, the plate-shaped infrared heater, and the infrared temperature probe form a closed-loop control system to achieve precise temperature regulation.

[0020] Furthermore, the optical and heating components are modularly designed, allowing for the replacement of adjustable lasers, heating elements, or sensors according to testing requirements.

[0021] Furthermore, the device is used in conjunction with a 4D X-ray CT system to achieve three-dimensional dynamic evolution imaging of the internal structure of the packaged chip under photothermal effects through dynamic scanning and temperature-controlled dimming.

[0022] The present invention also provides a chip three-dimensional dynamic evolution imaging method using the wafer-level packaged chip X-ray imaging in-situ photothermal coupling characterization device as described above, comprising the following steps: Fix the sample in the center area of ​​the sample stage, and adjust the relationship between the X-ray source, the in-situ photothermal coupling characterization device, and the detector to align the center of the sample with the center of the X-ray beam. Set the sample's measured temperature and illumination power, and control the adjustable laser and plate infrared heater to stabilize the temperature and illumination. Set the scanning parameters, control the rotation of the rotary stage, scan the sample, and obtain multi-angle projection data of the sample; A three-dimensional reconstructed image of the sample is obtained based on the multi-angle projection data; The three-dimensional reconstructed image is visualized and processed to enable in-situ non-destructive observation of the sample's internal structure under photothermal coupling conditions.

[0023] Compared with the prior art, the present invention has the following beneficial effects: 1. Achieved in-situ synchronous control of optical-thermal coupling: This invention integrates an optical irradiation system and an infrared heating system into an X-ray imaging platform, enabling synchronous control of illumination and temperature during three-dimensional imaging. This allows for in-situ observation of the optical and thermal multi-physics coupling characteristics of wafer-level packaged chips, providing a precise experimental platform for exploring chip failure mechanisms under multiple field effects.

[0024] 2. Precise control of photothermal decoupling is achieved: The optical part adopts a low-thermal-effect laser light source, and guides the beam to the sample surface through a quartz fiber, avoiding the influence of light on the temperature field, so that the light intensity and heating temperature can be adjusted independently.

[0025] 3. Closed-loop stable control of photothermal parameters was achieved: A closed-loop temperature control system was formed by an infrared temperature probe and an infrared temperature controller, with a temperature adjustment accuracy of ±0.5 ℃, which can accurately maintain the stability of the ambient temperature of the sample; at the same time, the optical power meter monitors the light power on the sample surface in real time and feeds it back to the laser control system, realizing dynamic and stable adjustment of the light power, ensuring that the photothermal parameters remain stable throughout the detection process, and improving the repeatability and reliability of experimental data.

[0026] 4. Compatibility with large-size samples: The device of this invention is compatible with 8-inch to 12-inch wafer-level packaged chip samples. While ensuring the spatial resolution of X-ray imaging, it enables in-situ non-destructive testing of large-size packaged chips in complex thermal and optical environments, thus broadening the applicability of the device.

[0027] 5. Dynamic evolution observation of chip internal structure was realized: By combining 4D X-ray CT technology with the device of this invention, a time dimension can be introduced on the basis of three-dimensional structural information to obtain the dynamic evolution process of the chip under illumination and heating conditions. This reveals the stress evolution, deformation migration and crack initiation process of solder joints, interconnect layers, and packaging material interfaces under the action of multiple physical fields, thus providing key experimental support for packaging reliability analysis.

[0028] 6. Modular adaptability: The optical and heating components of the device are modularly designed, allowing for the replacement of light source types, heating elements, or sensors according to different packaging structures or testing requirements. This eliminates the need for significant adjustments to the overall structure of the device, making it suitable for non-destructive testing research on various integrated circuit packaging forms. Attached Figure Description

[0029] Figure 1 A schematic diagram of an in-situ photothermal coupling characterization device for X-ray imaging of a wafer-level packaged chip; Figure 2 This is a side view of the device; Among them, the rotating stage 1-01, lifting rod 1-02, base 1-03, sample chamber 1-04, sample stage 1-05, chamber cover 2-01, infrared temperature probe 2-02, infrared heating temperature controller 2-03, adjustable laser 3-01, quartz fiber optic cable 3-02, focusing lens 3-03, and optical power meter 3-04 are included. Detailed Implementation

[0030] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. These embodiments are based on the technical solution of the present invention and provide detailed implementation methods and specific operating procedures. However, the scope of protection of the present invention is not limited to the following embodiments.

[0031] This embodiment proposes an in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging, mainly comprising three parts: a physical control component, a heating component, and an optical component; such as Figure 1 , 2As shown, the physical control components include a base 1-03, a lifting rod 1-02, a rotating stage 1-01, a sample chamber 1-04, and a sample stage 1-05; the heating components include a chamber cover 2-01 with a plate-shaped infrared heater, an infrared temperature probe 2-02, and an infrared heating temperature controller 2-03; the optical components include an adjustable laser 3-01, a quartz fiber 3-02, a focusing lens 3-03, and an optical power meter 3-04.

[0032] Specifically, in the physical control component, the lifting rod 1-02 connects the base 1-03 and the rotating stage 1-01, the sample chamber 1-04 is set on the rotating stage 1-01, and the sample stage 1-05 is located in the sample chamber 1-04 to accommodate the packaged chip sample under test. In the heating assembly, the chamber cover 2-01 is matched with the sample chamber 1-04, and the infrared heating temperature controller 2-03 is connected to the plate-shaped infrared heater and the infrared temperature probe 2-02 respectively. The infrared temperature probe 2-02 is set on the chamber cover 2-01. In the optical assembly, the quartz fiber 3-02 is connected to the adjustable laser 3-01 and extends into the sample chamber 1-04. The focusing lens 3-03 is set at the light-emitting end of the quartz fiber 3-02. The optical power meter 3-04 is electrically connected to the adjustable laser 3-01.

[0033] The assembly process of the above-mentioned in-situ photothermal coupling characterization device includes: First, the physical control components are assembled and fixed. The lower end of the lifting rod 1-02 is vertically fixed to the upper center of the base 1-01 to ensure that the lifting rod 1-02 does not shift or wobble during the lifting and adjusting process. Then, the rotating stage 1-03 is horizontally installed on the upper end of the lifting rod 1-02. This rotating stage can achieve continuous rotation from 0 to 360° with a rotation accuracy better than ±0.1°. Through this connection structure, the scanning trajectory and imaging requirements of the X-ray CT system can be precisely matched by adjusting the height of the lifting rod 1-02 and the angle of the rotating stage 1-03. The sample chamber 1-04 is then placed securely on the upper surface of the rotating stage 1-03. The sample chamber is made of high-temperature resistant non-metallic materials such as alumina ceramic or quartz, which can effectively avoid attenuation interference to X-ray imaging and ensure imaging clarity. The sample stage 1-05 is then fixed in the central area inside the sample chamber 1-04 to support and fix the packaged chip sample under test.

[0034] Next, the heating components are connected. The chamber cover 2-01 with the plate-shaped infrared heater is placed on the upper end of the sample chamber 1-04 to ensure that a relatively closed environment is formed inside the sample chamber to reduce temperature loss. Then, the infrared temperature probe 2-02 is embedded in the preset hole of the chamber cover 2-01, with the probe detection end facing the inside of the sample chamber 1-04 to ensure accurate acquisition of temperature data inside the chamber. Finally, the infrared heating temperature controller 2-03 is electrically connected to the plate-shaped infrared heater and the infrared temperature probe 2-02 inside the chamber cover 2-01 through wires to build a closed-loop temperature control system to achieve real-time temperature feedback and precise adjustment.

[0035] Finally, the optical components are connected. One end of the quartz fiber 3-02 is fixedly connected to the output port of the adjustable laser 3-01. This adjustable laser is a visible to near-infrared light source with a wavelength range of 400nm to 1100nm, and its output power is continuously adjustable within the range of 0 to 2W. It can achieve controllable light intensity without significantly affecting the sample temperature. The quartz fiber 3-02 is made of multi-core fiber bundle and high-temperature resistant quartz material, with a core diameter of no more than 200μm, which can improve the uniformity of light illumination. The other end of the quartz fiber 3-02 is passed through the preset channel inside the lifting rod 1-02, extended into the sample chamber 1-04, and fixed at a preset position on the inner wall of the chamber. The fiber optic output end is kept at a certain distance from the sample surface, and the incident angle of the beam is adjustable to avoid significant impact of laser illumination on the overall temperature of the sample. A focusing lens 3-03 is installed at the output end of the quartz fiber 3-02 to refocus the diverging beam emitted from the fiber end face onto the sample surface. The spot size or focal position can be adjusted according to testing requirements. An optical power meter 3-04 is fixed in the preset mounting position of the chamber cover 2-01, with its detection end facing the inside of the sample chamber 1-04, to detect the illumination power inside the chamber in real time. The optical power meter 3-04 is then electrically connected to the adjustable laser 3-01 through wires to construct a closed-loop optical power control system, realizing dynamic and stable adjustment of the laser output power.

[0036] After the device is assembled, it is fixed inside the X-ray CT system. The position of sample chamber 1-04 is adjusted to ensure that X-rays can penetrate sample chamber 1-04 and the sample inside smoothly, thus ensuring imaging quality.

[0037] This embodiment also provides a chip three-dimensional dynamic evolution imaging method using the wafer-level packaged chip X-ray imaging in-situ photothermal coupling characterization device as described above, including the following steps: S1. Fix the sample in the central area of ​​sample stage 1-05, and adjust the relationship between the X-ray source, the in-situ photothermal coupling characterization device and the detector to align the center of the sample with the center of the X-ray beam. S2. Set the sample's measured temperature and illumination power, and control the adjustable laser 3-01 and plate infrared heater to stabilize the temperature and illumination. S3. Set the scanning parameters, control the rotary stage 1-01 to rotate, scan the sample, and obtain multi-angle projection data of the sample; S4. Obtain a three-dimensional reconstructed image of the sample based on multi-angle projection data; S5. Visualize and process the 3D reconstructed images to enable in-situ non-destructive observation of the internal structure of the sample under photothermal coupling conditions.

[0038] The specific process of the above imaging method is explained as follows: First, sample preparation and device calibration are performed. The packaged chip to be tested is fixed to the center area of ​​the sample stage 1-05 using a clamp or adhesive to ensure that the sample is firmly fixed and to avoid displacement during the rotational scanning process, which would affect the imaging accuracy. Then, by adjusting the height of the lifting rod 1-02 and the angle of the rotating stage 1-03, the relative positions of the X-ray source, this device, and the detector of the X-ray CT system are adjusted so that the center of the sample is aligned with the center of the X-ray beam and as close to the detector as possible, in order to shorten the X-ray transmission path, reduce radiation attenuation, and ensure the spatial resolution of the imaging.

[0039] Next, the photothermal parameters are set and the system is preheated. The target temperature is set on the infrared heating temperature controller 2-03, and the target illumination power is set on the adjustable laser 3-01. The heating system and light source system are then simultaneously activated. The infrared heating temperature controller 2-03 collects real-time temperature data from the sample chamber 1-04 via the infrared temperature probe 2-02. If the detected temperature deviates from the target temperature, the controller automatically adjusts the heating power of the plate-shaped infrared heater to stabilize the temperature within the chamber near the target value, with a temperature adjustment accuracy of ±0.5℃. The beam is guided to the sample surface via the quartz optical fiber 3-02, avoiding… Illumination affects the temperature field. Meanwhile, the optical power meter 3-04 monitors the illumination power in the sample chamber 1-04 in real time and feeds the data back to the adjustable laser 3-01. If the illumination power deviates from the target value, the laser will automatically adjust the output power to achieve dynamic and stable adjustment of the illumination power. After the temperature and illumination power in the chamber reach the target value and stabilize for a period of time, the system preheating is completed. This process ensures that the sample is in a stable photothermal coupling environment during scanning, ensuring the repeatability and reliability of experimental data. At the same time, through photothermal decoupling design, illumination and temperature regulation are independent of each other, avoiding interference from illumination on the temperature field.

[0040] Subsequently, CT scanning and data acquisition were performed. Based on the sample characteristics, an appropriate scanning mode was selected in the X-ray CT system, parameters were set, and 4D X-ray CT scanning was initiated. During the scanning process, the rotating stage 1-03 drove the sample chamber 1-04 and the internal sample to rotate continuously from 0 to 360°, cooperating with the X-ray CT system to complete multi-angle projection data acquisition. This operation can simultaneously acquire structural information of the sample from different angles in an in-situ environment with photothermal coupling, providing comprehensive raw data for subsequent three-dimensional reconstruction. At the same time, 4D X-ray CT technology can introduce a time dimension into the three-dimensional spatial dimension, laying the foundation for capturing the dynamic evolution process of the sample. Next, data reconstruction processing is performed. The collected multi-angle projection data is imported into VoxeStudio Recon software, and projection preprocessing, tomographic reconstruction, and 3D reconstruction are performed in sequence. Projection preprocessing can remove noise and artifacts in the original data and improve data quality. Tomographic reconstruction can convert 2D projection data into 2D tomographic images. 3D reconstruction constructs a 3D stereoscopic image of the sample based on the 2D tomographic image. Finally, a clear 3D reconstructed image of the sample is obtained. This process can accurately restore the internal structural morphology of the sample under photothermal coupling conditions, providing clear and accurate image support for subsequent structural analysis.

[0041] Finally, image visualization and data analysis are performed. The 3D reconstructed data volume is imported into Dragonfly software for visualization and data processing. Through the software's analysis function, the internal structure of the chip under photothermal coupling can be clearly observed, and the stress evolution, deformation migration, and crack initiation process of key parts such as solder joints, interconnect layers, and packaging material interfaces can be accurately captured. This enables in-situ non-destructive observation of the chip under photothermal conditions. This step can intuitively reveal the dynamic evolution law of the chip under the action of multiple physical fields, providing key experimental support for failure mechanism analysis, reliability assessment, and structural optimization of packaged chips.

[0042] Throughout the entire process, the device is compatible with 8-inch to 12-inch wafer-level packaged chip samples without requiring sample pretreatment or damage, thus broadening the device's applicability. Meanwhile, the optical and heating modules adopt a modular design, allowing for the replacement of light source types, heating elements, or sensors according to different packaging structures or testing requirements, making it suitable for non-destructive testing research of various integrated circuit packaging forms.

[0043] The software used in the above implementation process is publicly available, genuine commercial software.

[0044] While the specific embodiments of the present invention have been described above in conjunction with the accompanying drawings, this is not intended to limit the scope of protection of the present invention. Those skilled in the art should understand that various modifications or variations that can be made by those skilled in the art without creative effort based on the technical solutions of the present invention are still within the scope of protection of the present invention.

Claims

1. An in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging, characterized in that, It includes physical control components, heating components, and optical components, among which, The physical control component includes a base (1-03), a lifting rod (1-02), a rotating stage (1-01), a sample chamber (1-04), and a sample stage (1-05). The lifting rod (1-02) connects the base (1-03) and the rotating stage (1-01). The sample chamber (1-04) is disposed on the rotating stage (1-01), and the sample stage (1-05) is located inside the sample chamber (1-04) for accommodating the packaged chip sample under test. The heating assembly includes a chamber cover (2-01) with an infrared heating plate, an infrared temperature probe (2-02), and an infrared heating temperature controller (2-03). The chamber cover (2-01) is matched with the sample chamber (1-04). The infrared heating temperature controller (2-03) is connected to the plate-shaped infrared heater and the infrared temperature probe (2-02) respectively. The infrared temperature probe (2-02) is set on the chamber cover (2-01). The optical components include an adjustable laser (3-01), a quartz fiber (3-02), a focusing lens (3-03), and an optical power meter (3-04). The quartz fiber (3-02) is connected to the adjustable laser (3-01) and extends into the sample chamber (1-04). The focusing lens (3-03) is disposed at the light-emitting end of the quartz fiber (3-02). The optical power meter (3-04) is electrically connected to the adjustable laser (3-01).

2. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The adjustable laser (3-01) is a low-thermal-effect laser source. One end of the quartz optical fiber (3-02) is connected to the adjustable laser (3-01), and the other end enters the sample chamber (1-04) through the internal channel of the lifting rod (1-02) and is fixed to the inner wall of the sample chamber (1-04) facing the sample.

3. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The sample chamber (1-04) is made of high-temperature resistant non-metallic material.

4. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The optical power meter (3-04) is located above the sample chamber (1-04) or on the chamber cover (2-01).

5. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The rotary table (1-01) can achieve continuous rotation from 0 to 360° with a rotation accuracy better than ±0.1°.

6. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The quartz optical fiber (3-02) is a multi-core fiber bundle and is made of high-temperature resistant material, with a core diameter of less than or equal to 200μm.

7. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The adjustable laser (3-01) has a wavelength range of 400nm to 1100nm and its output power is continuously adjustable within the range of 0 to 2W.

8. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The quartz optical fiber (3-02) maintains a set distance between its light-emitting end and the sample surface, and the incident angle of the beam is adjustable.

9. The in-situ photothermal coupling characterization device for wafer-level packaged chips using X-ray imaging according to claim 1, characterized in that, The sample stage (1-05) is compatible with samples of a maximum size of 8-12 inches.

10. A method for three-dimensional dynamic evolution imaging of a chip using an in-situ photothermal coupling characterization device for wafer-level packaged chips as described in any one of claims 1-9, characterized in that, Includes the following steps: Fix the sample in the central area of ​​the sample stage (1-05), and adjust the relationship between the X-ray source, the in-situ photothermal coupling characterization device, and the detector to align the center of the sample with the center of the X-ray beam. Set the sample's test temperature and illumination power, and control the adjustable laser (3-01) and plate infrared heater to stabilize the temperature and illumination. Set the scanning parameters, control the rotation of the rotary stage (1-01) to scan the sample, and obtain multi-angle projection data of the sample; A three-dimensional reconstructed image of the sample is obtained based on the multi-angle projection data; The three-dimensional reconstructed image is visualized and processed to enable in-situ non-destructive observation of the sample's internal structure under photothermal coupling conditions.

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