Capacitance measurement system and method based on continuous charging single electron transistor

Abstract

The invention relates to the technical field of capacitance measurement, in particular to a capacitance measurement system and method based on a continuously-charged single-electron transistor, electronic equipment and a storage medium, and the system comprises a capacitance detection circuit which enables the capacitance value to change when a gyroscope rotates, so that the voltage difference between the two ends of a bridge changes; the circuit balancing unit closes the discharge switch according to the target frequency to balance the bridge voltage; the single-electron pump module comprises a first single-electron transistor and a second single-electron transistor which are connected in series, the first single-electron transistor and the second single-electron transistor are both connected with the two ends of the bridge, and the first single-electron transistor and the second single-electron transistor are continuously charged through pumping electrons to expand the pressure difference between the two ends of the bridge until the pumping limit is reached; the counting module is used for counting the number of single electrons flowing through the single electron pump; the processing module calculates capacitance variation according to the number of single electrons and calculates the capacitance of the gyroscope according to the capacitance variation and the limit voltage difference between the two ends of the bridge. Therefore, the problems of limited signal-to-noise ratio, large noise interference, insufficient measurement precision and the like in capacitance measurement are solved.

Description

Technical Field

[0001] This application relates to the field of capacitance measurement technology, and in particular to a capacitance measurement system, method, electronic device and storage medium based on a continuously charged single-electron transistor. Background Technology

[0002] Microelectromechanical systems (MEMS) gyroscopes are a crucial type of inertial sensor. Their core working principle involves detecting the minute displacements of a silicon structure caused by the Coriolis force during rotation. This displacement is precisely characterized by the slight change in capacitance between the electrodes on the sensitive structure (typically on the order of aF or even zF). Therefore, high-precision and high-sensitivity detection of these minute capacitance changes is a key factor determining the performance of a MEMS gyroscope.

[0003] Currently, mainstream gyroscope capacitance detection circuits for microelectromechanical systems (MEMS) primarily rely on analog signal processing technology. Common solutions include using a differential capacitor bridge to convert capacitance changes into voltage or charge signals, which are then amplified and processed using high-gain operational amplifiers, switched capacitor circuits, charge integrators, or synchronous demodulation techniques to obtain the magnitude of the capacitance change and calculate the gyroscope angular velocity. However, this approach suffers from limitations in capacitance measurement signal-to-noise ratio, susceptibility to noise interference, and insufficient measurement accuracy. Summary of the Invention

[0004] This application provides a capacitance measurement system, method, electronic device, and storage medium based on a continuously charged single-electron transistor to solve problems such as limited signal-to-noise ratio, high susceptibility to noise interference, and insufficient measurement accuracy in capacitance measurement.

[0005] The first aspect of this application provides a capacitance measurement system based on a continuously charged single-electron transistor, comprising: a capacitance detection circuit, whose capacitance changes when the gyroscope rotates, thereby changing the voltage difference across the bridge; a circuit balancing unit, used to close a discharge switch according to a target frequency to balance the voltage across the bridge; a single-electron pump module, comprising a first single-electron transistor and a second single-electron transistor connected in series, both the first and second single-electron transistors being connected across the bridge, the first and second single-electron transistors pumping electrons to expand the voltage difference across the bridge through continuous charging until a pumping limit is reached; a counting module, used to count the number of individual electrons flowing through the single-electron pump module; and a processing module, used to calculate the capacitance change of the capacitance detection circuit based on the number of individual electrons, and to calculate the capacitance of the gyroscope based on the capacitance change and the limit voltage difference across the bridge.

[0006] According to one embodiment of this application, the capacitance detection circuit includes a differential capacitor, a fixed capacitor, and a carrier wave.

[0007] According to one embodiment of this application, the circuit balancing unit includes a discharge switch and a discharge resistor.

[0008] According to one embodiment of this application, the discharge switch is a MOSFET high-frequency switch with a frequency higher than a preset value.

[0009] According to one embodiment of this application, both the first single-electron transistor and the second single-electron transistor include a source and a drain and two gates. The source and drain of the first single-electron transistor and the second single-electron transistor are connected to the two ends of a bridge to provide an electron flow path. The gates of the first single-electron transistor and the second single-electron transistor are connected to a modulation signal.

[0010] According to one embodiment of this application, the counting module includes a first radio frequency single-electron detection circuit and a second radio frequency single-electron detection circuit. The first radio frequency single-electron detection circuit is used to detect the number of single electrons flowing through the first single-electron transistor, and the second radio frequency single-electron detection circuit is used to detect the number of single electrons flowing through the second single-electron transistor.

[0011] According to one embodiment of this application, both the first radio frequency single-electron detection circuit and the second radio frequency single-electron detection circuit include a radio frequency signal sub-circuit, a bidirectional coupler, an LC resonant circuit, and a single-electron transistor. The radio frequency signal frequency of the radio frequency signal sub-circuit is matched with the LC resonant frequency of the LC resonant circuit so that the LC resonant circuit operates in the resonant mode. After the radio frequency single-electron transistor system detects the gate voltage, it changes the impedance of the LC resonant circuit, thereby affecting the output voltage amplitude of the bidirectional coupler. The number of electrons entering the Coulomb island can be obtained based on the mode change of the output voltage.

[0012] A second aspect of this application provides an electronic device including the above-described capacitance measurement system based on a continuously charged single-electron transistor.

[0013] The third aspect of this application provides a capacitance measurement method based on a continuously charged single-electron transistor, applied to the processing module of the capacitance measurement system based on a continuously charged single-electron transistor as described in claim 1. The method includes the following steps: when a change in voltage difference across the bridge is detected, a discharge switch is closed according to the target frequency control circuit balancing unit to balance the voltage across the bridge. The capacitance detection circuit changes its capacitance value when the gyroscope rotates, causing a change in voltage difference across the bridge. Electrons are pumped through the first and second single-electron transistors of the single-electron pump module to expand the voltage difference across the bridge through continuous charging until the pumping limit is reached. The number of single electrons flowing through the single-electron pump module is obtained. Since the voltage difference at the pumping limit is fixed, the capacitance change of the capacitance detection circuit can be calculated based on the difference in the number of moving electrons. The capacitance change and the limit voltage difference across the bridge are used to calculate the capacitance of the gyroscope.

[0014] A fourth aspect of this application provides a computer-readable storage medium having a computer program stored thereon, which is executed by a processor to implement the capacitance measurement method based on a continuously charged single-electron transistor as described in the above embodiments.

[0015] Therefore, this application has the following beneficial effects: The capacitance detection circuit changes its capacitance as the gyroscope rotates, causing a change in the voltage difference across the bridge. This amplifies the minute capacitance change, improving detection sensitivity. The circuit balancing unit closes the discharge switch according to the target frequency to balance the voltage across the bridge, ensuring a consistent reference for each measurement. The single-electron pump module includes a first and a second single-electron transistor connected in series. Both transistors are connected to the bridge, and they pump electrons to continuously increase the voltage difference across the bridge until the pumping limit is reached, achieving precise single-electron measurement. The system employs a unidirectional transport mechanism and a counting module to count the number of individual electrons flowing through the single-electron pump module. This converts the weak capacitance change into a quantized signal of the number of countable electrons, avoiding the thermal and flicker noise introduced by multi-stage amplification and filtering in traditional analog circuits. The processing module calculates the capacitance change by measuring the number of electrons transported when the limit voltage is reached during charge transport. It then uses the capacitance change and the bridge voltage difference to calculate the gyroscope capacitance. Since the limit voltage difference of the single-electron pump is a known parameter, the capacitance can be calculated after obtaining the charge quantity, significantly improving the sensitivity and resolution of capacitance measurement. This solves the technical problems of limited signal-to-noise ratio, high susceptibility to noise interference, and insufficient measurement accuracy in capacitance measurement.

[0016] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0017] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 This is an example diagram of a capacitance measurement system based on a continuously charged single-electron transistor according to an embodiment of this application; Figure 2 This is a block diagram of a single electronic pump system according to an embodiment of this application; Figure 3 A stable state diagram of the single-electron pump gate modulation according to an embodiment of this application; Figure 4 The circuit diagrams for each node of the single electronic pump system according to embodiments of this application are shown below. Figure 5 This is a circuit schematic diagram of a radio frequency single-electron transistor according to an embodiment of this application; Figure 6 This is a schematic diagram of the measurement results of a radio frequency single-electron transistor system according to an embodiment of this application; Figure 7 This describes the changes in pressure difference and electron number on Coulomb Island during electronic transport according to embodiments of this application. Figure 8 This is a simulation diagram showing the voltage difference reaching the transport limit according to an embodiment of this application; Figure 9 This is an overall framework diagram of a capacitance measurement system based on a continuously charged single-electron transistor according to an embodiment of this application; Figure 10 This is a flowchart of a capacitance measurement method based on a continuously charged single-electron transistor according to an embodiment of this application; Figure 11 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application. Detailed Implementation

[0018] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0019] The following description, with reference to the accompanying drawings, describes a capacitance measurement system, method, electronic device, and storage medium based on a continuously charging single-electron transistor according to embodiments of this application. Addressing the problems of limited signal-to-noise ratio, high susceptibility to noise interference, and insufficient measurement accuracy in capacitance measurement mentioned in the background art, this application provides a capacitance measurement system based on a continuously charging single-electron transistor. In this system, the capacitance detection circuit changes its capacitance value as the gyroscope rotates, causing a change in the voltage difference across the bridge; a circuit balancing unit is used to close a discharge switch according to a target frequency to balance the voltage across the bridge; a single-electron pump module includes a first single-electron transistor and a second single-electron transistor connected in series, with both the first and second single-electron transistors connected to the bridge; the first and second single-electron transistors pump electrons to continuously charge and expand the voltage difference across the bridge until a pumping limit is reached; a counting module is used to count the number of individual electrons flowing through the single-electron pump module; and a processing module is used to calculate the capacitance change of the capacitance detection circuit based on the number of individual electrons, and to calculate the capacitance of the gyroscope based on the capacitance change and the ultimate voltage difference across the bridge. This solves the problems of limited signal-to-noise ratio, high susceptibility to noise interference, and insufficient measurement accuracy in capacitance measurement.

[0020] like Figure 1As shown, the capacitance measurement system 10 based on a continuously charged single-electron transistor integrates a capacitance detection circuit 110, a circuit balancing unit 120, a single-electron pump module 130, a counting module 140, and a processing module 150.

[0021] The circuit includes a capacitance detection circuit 110, whose capacitance changes as the gyroscope rotates, causing a change in the voltage difference across the bridge; a circuit balancing unit 120, used to close a discharge switch according to a target frequency to balance the voltage across the bridge; a single-electron pump module 130, comprising a first single-electron transistor and a second single-electron transistor connected in series, with both the first and second single-electron transistors connected across the bridge; the first and second single-electron transistors pump electrons to continuously charge and expand the voltage difference across the bridge until the pumping limit is reached; a counting module 140, used to count the number of individual electrons flowing through the single-electron pump module 130; and a processing module 150, used to calculate the capacitance change of the capacitance detection circuit 110 based on the number of individual electrons, and to calculate the capacitance of the gyroscope based on the capacitance change and the ultimate voltage difference across the bridge.

[0022] Understandably, when the gyroscope rotates, a tiny displacement causes a change in capacitance. The capacitance detection circuit 110 characterizes the voltage difference change across the bridge, and amplifies the tiny capacitance change to improve detection sensitivity. The circuit balancing unit 120 uses a fast switch to adjust the voltage across its two sides, allowing the voltage to change from zero voltage difference, ensuring a consistent reference for each measurement. A single electron pump module 130 transports individual electrons, achieving charge transport and compensation at the single electron level, thus improving the sensitivity and resolution of capacitance measurement. The counting module 140 counts the passing electrons. The movement of electrons causes the voltage difference across the two sides to increase until it reaches the transport limit of the single electron pump, converting the weak capacitance change into a quantized signal of the number of countable electrons. This avoids the thermal noise and flicker noise introduced by multi-stage amplification and filtering in traditional analog circuits. The processing module 150 calculates the capacitance change of the circuit based on the number of individual electrons, and finally calculates the capacitance of the gyroscope based on the capacitance change and the limiting voltage difference, significantly improving the sensitivity and resolution of capacitance measurement. This application has low requirements for control algorithms. The system uses the limit of electronic transport to perform capacitance detection, and the detection content is relatively simple. It converts capacitance changes into a countable number of electrons, which overcomes the inherent drawbacks of amplification and noise introduction in traditional circuits and improves the performance of the detection circuit.

[0023] According to one embodiment of this application, the capacitance detection circuit 110 includes a differential capacitor, a fixed capacitor, and a carrier wave.

[0024] As can be understood, a differential capacitor is a paired unit consisting of two capacitors with completely symmetrical structures and identical performance parameters. When the gyroscope rotates and generates displacement, the capacitance of the differential capacitor changes. A fixed capacitor is a capacitor unit whose capacitance value is determined during circuit design and does not change with external factors during operation. The carrier wave provides a high-frequency, stable AC power supply to the differential capacitor circuit 110. When the carrier wave is connected to a bridge composed of differential capacitors, the change in capacitance will cause a change in the voltage amplitude across the bridge, i.e., a change in voltage difference. This design is compatible with the gyroscope's detection circuit structure and is easy to integrate.

[0025] For example, the capacitance detection circuit 110 includes a pair of differential capacitors, a pair of fixed capacitors, and a carrier wave. When the gyroscope rotates and generates displacement, the differential capacitors will change their capacitance. The carrier wave power supply converts the capacitance change into a voltage signal. The larger the capacitance change, the larger the amplitude of the output voltage, thereby converting the capacitance difference into a measurable voltage difference, so that the voltage difference across the bridge changes.

[0026] According to one embodiment of this application, the circuit balancing unit 120 includes a discharge switch and a discharge resistor.

[0027] Understandably, the circuit balancing unit 120 includes a discharge switch and a discharge resistor. The resistance value of the discharge resistor can be relatively small to increase the bandwidth. The circuit balancing unit 120 is used to quickly balance the voltage across the bridge.

[0028] For example, by setting a smaller discharge resistor value, the short circuit can be balanced by closing the discharge switch at a certain frequency when the circuit is unbalanced.

[0029] According to one embodiment of this application, the discharge switch is a MOSFET high-frequency switch with a frequency higher than a preset value.

[0030] Understandably, the discharge switch uses a MOSFET high-frequency switch, suitable for MEMS (Micro Electromechanical Systems) systems requiring higher detection frequencies. The preset value refers to the actual operating frequency of the circuit, used to define the operating trigger boundary of the MOSFET high-frequency switch. The MOSFET high-frequency switch must match the system's operating frequency, and the upper limit of the MOSFET high-frequency switch's performance must be higher than the system's actual operating frequency.

[0031] For example, MOSFET high-frequency switches can switch at high speed and have low high-frequency loss, which can meet the high detection frequency requirements of MEMS systems.

[0032] According to one embodiment of this application, both the first single-electron transistor and the second single-electron transistor include a source and a drain and two gates. The source and drain of the first single-electron transistor and the second single-electron transistor are connected to the two ends of a bridge to provide an electron flow path. The gates of the first single-electron transistor and the second single-electron transistor are connected to a modulation signal.

[0033] Understandably, the single-electron pump module 130 is a nanoelectronic device composed of two single-electron transistors. Based on the Coulomb blockade effect of single-electron transistors, it can be controlled to operate in a conducting or blocked state by a gate pump signal. By alternately turning on the two single-electron transistors, a single-electron pump can be formed. The Coulomb blockade effect refers to the fact that when the conductor size is small enough, electrons cannot pass through arbitrarily; they must overcome a certain energy barrier to pass through, providing a physical basis for the precise control of individual electrons. The gate pump signal is a periodic control voltage signal applied to the gate of the single-electron transistor, which controls the conduction / blocking of the two single-electron transistors in a timing sequence, allowing electrons to be pumped directionally and continuously. Compared with a single single-electron transistor, the dual single-electron transistor structure reduces the error in electron counting and ensures measurement accuracy.

[0034] The system balances the circuit by closing the discharge switch at a certain frequency. Then, it activates the single-electron pump module 120 to transport electrons and increase the voltage difference across the bridge. When the voltage difference reaches the pumping limit of the single-electron pump, electron transport becomes impossible, and the pumping limit is reached. The limiting voltage depends on the capacitance and resistance of each component of the single-electron pump module 130 and is a fixed value. The system calculates the voltage difference across the bridge based on the number of electrons required to create this voltage difference.

[0035] Each single-electron transistor includes a source and a drain, and two gates. The source and drain are connected across the bridge circuit, providing a path for electrons to flow; in both single-electron transistors, one gate is connected to the modulation signal. For example... Figure 2 As shown, a single electronic pump is connected in series with two single electronic transistors 1301 and 1302, whose source and drain are connected to the two ends of the bridge, which can transport electrons between the bridges. The two gates are connected to two modulation voltages 1303 and 1304 respectively.

[0036] For example, under a specific voltage, a modulation signal can affect the Fermi level of electrons on a quantum dot in a single-electron transistor, controlling its conductivity and causing electrons to tunnel towards lower energy levels, thus enabling the transport of individual electrons. Quantum dots can achieve the quantized storage of electrons, ensuring that electrons move directionally in single units and allowing for precise control of individual electron transport. Figure 3 As shown, under different voltage conditions, the number of electrons on the quantum dot has different stable states, and the boundary of the stable state obeys the boundary line where the energy change is 0. The circuit diagram of each node of the single-electron pump system is shown below. Figure 4 As shown, the stability boundary is calculated as follows, where the M matrix represents the capacitance between nodes in the single-electron pump system:

[0037] Obviously, the matrix has At this point, CM can be decomposed into:

[0038] in Given the interconnection matrix between voltage nodes, Given the interconnection matrix between charge nodes, Representation matrix The transpose of. Take. The matrix representing the unknown charge quantity, Characterizing a matrix of known charge quantities, Characterize the electric potential at a known point. Characterize the electric potential at the unknown point. Note this. and It is a characterization of different electrical properties of the same set of points, the same and It represents the different electrical characteristics of the same set of points. For the source-drain-gate junction, its charge represents the charge on the connected capacitor.

[0039] Due to the electrical properties of capacitors, the following formulas exist in circuits:

[0040] The quantity to be solved in this formula is and The analysis is as follows:

[0041] At this point, according to the definition of Helmholtz free energy... ,have

[0042] Taking the energy change as 0 as the boundary, the result is as follows: Figure 3 As shown.

[0043] According to one embodiment of this application, the counting module 140 includes a first radio frequency single-electron detection circuit and a second radio frequency single-electron detection circuit. The first radio frequency single-electron detection circuit is used to detect the number of single electrons flowing through the first single-electron transistor, and the second radio frequency single-electron detection circuit is used to detect the number of single electrons flowing through the second single-electron transistor.

[0044] Understandably, the counting module 140 consists of an RF single-electron detection system. This system is coupled to the gate of the single-electron transistor under test via the gate of the single-electron transistor. When an electron passes through the single-electron transistor, a voltage pulse is generated on its Coulomb island. The coupling of this pulse to the gate of the RF single-electron detection system causes a change in its conduction performance, thus affecting the impedance coefficient and allowing the measurement of the number of electrons entering the Coulomb island. The Coulomb island is extremely small, significantly amplifying the Coulomb repulsion force of a single electron, resulting in a Coulomb blocking effect. This ensures that only one electron can overcome the energy barrier and tunnel through at a time, achieving precise control of individual electrons. The counting module 140 has two detection circuits: a first RF single-electron detection circuit and a second RF single-electron detection circuit. These two circuits enable dual verification and accurate counting of electron transport, providing bidirectional confirmation of the complete electron transport process. Simultaneously, the two detection circuits provide real-time feedback on the operating status of the two single-electron transistors, helping the system adjust promptly and avoid imbalances.

[0045] For example, to transport electrons from one end of a bridge to the other, they must pass through a first single-electron transistor and a second single-electron transistor. A first radio frequency (RF) single-electron detection circuit records the number of electrons entering the transport path, while a second RF single-electron monitoring circuit records the number of electrons successfully reaching the target end. Comparing the counts from the two circuits determines the number of electrons effectively transported, reducing counting errors. If the first RF single-electron detection circuit counts but the second RF single-electron detection circuit does not, it indicates that electrons are staying on the quantum dots of the two single-electron transistors. In this case, the system can quickly adjust the modulation signal to restore electron transport and maintain the stability of the bridge balance.

[0046] According to one embodiment of this application, both the first radio frequency single-electron detection circuit and the second radio frequency single-electron detection circuit include a radio frequency signal sub-circuit, a bidirectional coupler, an LC resonant circuit, and a single-electron transistor. The radio frequency signal frequency of the radio frequency signal sub-circuit is matched with the LC resonant frequency of the LC resonant circuit so that the LC resonant circuit operates in the resonant mode. After the radio frequency single-electron transistor system detects the gate voltage, it changes the impedance of the LC resonant circuit, thereby affecting the output voltage amplitude of the bidirectional coupler. The number of electrons entering the Coulomb island can be obtained based on the mode change of the output voltage.

[0047] Understandably, the first and second radio frequency (RF) single-electron detection circuits use RF signals, bidirectional couplers, LC resonant circuits, and single-electron transistors to count electrons passing through a single-electron pump. The RF signal sub-circuit transmits RF signals, the frequency of which matches the LC (Inductor-Capacitor Circuit) resonant frequency, allowing the LC circuit to operate in resonant mode. The bidirectional coupler couples the high-frequency signal generated by the RF signal sub-circuit to the LC resonant circuit and also couples the voltage pulse generated by the single-electron transistor back to the signal processing terminal. The single-electron transistor, connected in parallel with the LC resonant circuit, determines its conduction state based on the magnitude of the voltage coupled to its gate, which originates from the voltage pulse generated on the Coulomb islands when electrons pass through. After the RF single-electron system couples external pulse signals through its gate, it affects the impedance of the LC resonant circuit, thereby changing the output voltage amplitude of the bidirectional coupler. By capturing changes in the amplitude of the reflected signal, it determines whether electrons have passed through, thus measuring the number of electrons. The Coulomb islands are charge storage regions that achieve precise capture, storage, and transport of individual electrons through the Coulomb blocking effect.

[0048] For example, the first and second radio frequency single-electron detection circuits, such as Figure 5 As shown, the LC circuit operates in a resonant state using a carrier signal. When a pulse is generated at the input signal, it affects the impedance of the SET region, thus affecting the resonant point of the LC circuit, causing a transmitted signal to be generated in the circuit. After passing through a bidirectional coupler, the signal of electrons passing through can be observed at the output. Operating the single-electron transistor at a relatively low voltage allows it to have the highest sensitivity to changes in gate voltage; therefore, the carrier voltage is set to 0.1mV and the frequency to 1.7GHz, matching the resonant frequency of the LC. When electrons pass through, the impedance of the SET changes significantly, allowing the signal of electrons passing through to be received at the reflecting end of the bidirectional coupler, such as... Figure 6 As shown.

[0049] It should be noted that the counting module 140 counts the passing electrons, and the processing module 150 calculates the capacitance change of the capacitance detection circuit 110 based on the number of electrons. The movement of electrons causes the pressure difference across the circuit to increase until it reaches the transport limit of the single electron pump. The capacitance of the gyroscope can then be calculated based on the ultimate pressure difference and the capacitance change of the capacitance detection circuit 110. By using a single electron pump to transport electrons and change the pressure difference until the single electron pump fails, the electron transport characteristic curve is shown below. Figure 7 As shown, the voltage difference gradually increases until it reaches a certain level and then stops increasing, which is the limit voltage difference. In the initial transport process, the number of electrons on Coulomb Island 1 and Coulomb Island 2 changes alternately, representing electrons passing through the two Coulomb Islands one by one.

[0050] This limiting voltage is an inherent property of single-electron transistors and can be measured in advance through calibration. The method for determining whether the transport limit has been reached is to detect, using a radio frequency single-electron detection system, that the charge number changes on the two Coulomb islands satisfy a specific mode. A specific mode refers to the condition where, after reaching the transport limiting voltage, the number of electrons on Coulomb island 1 and Coulomb island 2 no longer follows an alternating pattern; this is considered a transport limit reached, and its characteristic changes are as follows: Figure 8 As shown.

[0051] like Figure 9 As shown below, embodiments are listed to illustrate the capacitance measurement system 10 based on a continuously charged single-electron transistor proposed in this application.

[0052] 1. When the gyroscope rotates, it causes the capacitance values ​​of the two sets of differential capacitors to change, which in turn causes the voltage difference across the bridge to change.

[0053] 2. A single electron pump is used to transport electrons individually, and its two grids can make a single electron flow in one direction under a specific voltage.

[0054] 3. Simultaneously, a radio frequency (RF) single-electron system is used to count the passing electrons. The movement of electrons causes the voltage difference between the two sides to increase. The RF single-electron system can measure the reflection coefficient by measuring the effect of a single-electron transistor on the impedance of the RF circuit, thereby obtaining the number of electrons passing through the single-electron transistor and determining how many electrons flowed through the bridge.

[0055] 4. Once the pressure difference reaches the transport limit of the single-electron pump, the capacitance can be calculated based on the pressure difference and the number of transported electrons. This limiting pressure difference is an inherent property of the single-electron transistor and can be measured in advance through calibration. The method to determine when the transport limit has been reached is to detect, using an RF single-electron detection system, that the change in charge number on the two Coulomb islands satisfies a specific mode.

[0056] According to the capacitance measurement system based on a continuously charging single-electron transistor proposed in this application, the capacitance detection circuit changes the capacitance value when the gyroscope rotates, thereby changing the voltage difference across the bridge and improving the detection sensitivity by amplifying the small capacitance change; the circuit balancing unit is used to close the discharge switch according to the target frequency to balance the voltage across the bridge, ensuring that the reference for each measurement is the same; the single-electron pump module includes a first single-electron transistor and a second single-electron transistor connected in series. Both the first and second single-electron transistors are connected across the bridge, and the first and second single-electron transistors pump electrons to expand the voltage difference across the bridge through continuous charging until a certain value is reached. The system achieves precise, unidirectional transport of individual electrons at the pumping limit. A counting module counts the number of individual electrons flowing through the single-electron pump module, converting minute capacitance changes into a countable quantum signal of electron count, thus avoiding thermal and flicker noise introduced by multi-stage amplification and filtering in traditional analog circuits. A processing module calculates the capacitance change by measuring the number of electrons transported when the charge transport reaches its limiting voltage. It then uses the capacitance change and the bridge voltage difference to calculate the gyroscope capacitance. Since the limiting voltage difference of the single-electron pump is a known parameter, the capacitance can be calculated after obtaining the charge quantity, significantly improving the sensitivity and resolution of capacitance measurement. This solves the technical problems of limited signal-to-noise ratio, high susceptibility to noise interference, and insufficient measurement accuracy in capacitance measurement.

[0057] Specifically, Figure 10 This is a flowchart illustrating a capacitance measurement method based on a continuously charged single-electron transistor, provided as an embodiment of this application.

[0058] like Figure 10 As shown, the capacitance measurement method based on a continuously charged single-electron transistor includes the following steps: In step S101, if a change in the voltage difference across the bridge is detected, the discharge switch is closed according to the target frequency control circuit balance unit to balance the voltage across the bridge. The capacitance of the capacitor detection circuit changes when the gyroscope rotates, so that the voltage difference across the bridge changes.

[0059] In step S102, the first and second single-electron transistors of the single-electron pump module pump electrons to expand the voltage difference across the bridge through continuous charging until the pumping limit is reached.

[0060] In step S103, the number of individual electrons flowing through the single-electron pump module is obtained. Since the pressure difference at the limit of the pump is fixed, the capacitance change of the capacitance detection circuit can be calculated based on the difference in the number of moving electrons. The capacitance change and the limit pressure difference across the bridge are used to calculate the capacitance of the gyroscope.

[0061] It should be noted that the foregoing explanation of the embodiment of the capacitance measurement system based on a continuously charged single-electron transistor also applies to the capacitance measurement method based on a continuously charged single-electron transistor in this embodiment, and will not be repeated here.

[0062] According to the capacitance measurement method based on continuously charged single-electron transistors proposed in this application, when a change in the voltage difference across the bridge is detected, the discharge switch is closed by the balancing unit of the target frequency control circuit to balance the voltage across the bridge. The capacitance detection circuit changes its capacitance value as the gyroscope rotates, thus changing the voltage difference across the bridge. The first and second single-electron transistors of the single-electron pump module pump electrons to continuously expand the voltage difference across the bridge until the pumping limit is reached, achieving charge transport and compensation at the single-electron level, improving the sensitivity and resolution of capacitance measurement. The number of single electrons flowing through the single-electron pump module is obtained. Since the voltage difference at the pumping limit is fixed, the capacitance change of the capacitance detection circuit can be calculated based on the number of single electrons. The capacitance change and the ultimate voltage difference across the bridge are used to calculate the gyroscope's capacitance. The number of electrons is counted, converting the weak capacitance change into a quantized signal, avoiding the inherent thermal and flicker noise of traditional analog circuits, and improving the performance of the detection circuit. Therefore, the problems of limited signal-to-noise ratio, high susceptibility to noise interference, and insufficient measurement accuracy in capacitance measurement are solved.

[0063] Figure 11 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. The electronic device 200 includes the above-described single-electronic pump-based feedback differential capacitance measurement system 10.

[0064] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the capacitance measurement method based on a continuously charged single-electron transistor as described above.

[0065] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0066] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0067] Any process or method described in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or N executable instructions for implementing custom logic functions or processes, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.

[0068] It should be understood that various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. If implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (FPGAs), field-programmable gate arrays (FPGAs), etc.

[0069] Those skilled in the art will understand that all or part of the steps of the methods implementing the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, the program includes one or a combination of the steps of the method embodiments.

[0070] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A capacitance measurement system based on a continuously charged single-electron transistor, characterized in that, include: The capacitance detection circuit changes as the gyroscope rotates, thus causing a change in the voltage difference across the bridge. The circuit balancing unit is used to close the discharge switch according to the target frequency in order to balance the voltage across the bridge. A single-electron pump module includes a first single-electron transistor and a second single-electron transistor connected in series. Both the first and second single-electron transistors are connected to both ends of a bridge circuit. The first and second single-electron transistors pump electrons to expand the voltage difference across the bridge circuit through continuous charging until the pumping limit is reached. A counting module is used to count the number of individual electrons flowing through the single-electron pump module; The processing module is used to calculate the capacitance change of the capacitance detection circuit based on the number of individual electrons, and to calculate the capacitance of the gyroscope based on the capacitance change and the ultimate voltage difference across the bridge.

2. The capacitance measurement system based on a continuously charged single-electron transistor according to claim 1, characterized in that, The capacitance detection circuit includes a differential capacitor, a fixed capacitor, and a carrier wave.

3. The capacitance measurement system based on a continuously charged single-electron transistor according to claim 1, characterized in that, The circuit balancing unit includes a discharge switch and a discharge resistor.

4. The capacitance measurement system based on a continuously charged single-electron transistor according to claim 3, characterized in that, The discharge switch is a MOSFET high-frequency switch with a frequency higher than a preset value.

5. The capacitance measurement system based on a continuously charged single-electron transistor according to claim 1, characterized in that, The first single-electron transistor and the second single-electron transistor each include a source and a drain and two gates. The source and drain of the first single-electron transistor and the second single-electron transistor are connected to the two ends of the bridge to provide an electron flow path. The gates of the first single-electron transistor and the second single-electron transistor are connected to the modulation signal.

6. The capacitance measurement system based on a continuously charged single-electron transistor according to claim 1, characterized in that, The counting module includes a first radio frequency single-electron detection circuit and a second radio frequency single-electron detection circuit. The first radio frequency single-electron detection circuit is used to detect the number of single electrons flowing through the first single-electron transistor, and the second radio frequency single-electron detection circuit is used to detect the number of single electrons flowing through the second single-electron transistor.

7. The capacitance measurement system based on a continuously charged single-electron transistor according to claim 1, characterized in that, Both the first and second RF single-electron detection circuits include an RF signal sub-circuit, a bidirectional coupler, an LC resonator circuit, and a single-electron transistor. The RF signal frequency of the RF signal sub-circuit is matched with the LC resonator circuit's LC resonator frequency, so that the LC resonator circuit operates in resonant mode. After the RF single-electron transistor system detects the gate voltage, it changes the impedance of the LC resonator circuit, thereby affecting the output voltage amplitude of the bidirectional coupler. The number of electrons entering the Coulomb island can be obtained based on the mode change of the output voltage.

8. An electronic device, characterized in that, The capacitance measurement system based on a continuously charged single-electron transistor as described in any one of claims 1-7.

9. A capacitance measurement method based on a continuously charged single-electron transistor, characterized in that, The method, applied to the processing module of the capacitance measurement system based on a continuously charged single-electron transistor as described in any one of claims 1-7, includes the following steps: If a change in voltage difference across the bridge is detected, the discharge switch is closed by the balancing unit of the target frequency control circuit to balance the voltage across the bridge. The capacitance of the capacitor detection circuit changes when the gyroscope rotates, thus causing a change in voltage difference across the bridge. The first and second single-electron transistors of the single-electron pump module pump electrons to expand the voltage difference across the bridge through continuous charging until the pumping limit is reached. The number of individual electrons flowing through the single-electron pump module is obtained. Since the pressure difference at the limit of the pump is fixed, the capacitance change of the capacitance detection circuit can be calculated based on the difference in the number of moving electrons. The capacitance change and the limit pressure difference across the bridge are used to calculate the capacitance of the gyroscope.

10. A computer-readable storage medium having a computer program or instructions stored thereon, characterized in that, When the computer program or instructions are executed, they implement the capacitance measurement method based on a continuously charged single-electron transistor as described in claim 9.

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