Detection apparatus, lithographic apparatus, and article manufacturing method

Abstract

The invention provides an inspection apparatus, a lithographic apparatus, and an article manufacturing method. A detection apparatus for detecting a surface position of a detection surface includes: a mask having a slit; a projection optical system configured to form an image on the detection surface by irradiating the detection surface with light having passed through the slit; an image sensor; and a light receiving optical system configured to form an image of light reflected from the detection surface on the image sensor, in which the following conditions are satisfied: [beta] 1 = tan [theta] 2 / tan [theta] 1, 70 degree lt; [theta] 1lt; 85 degrees, theta 2lt; 70 degrees, and 0.03 lt; beta 1lt; [theta] 1 represents an angle of incidence of the light to the detection surface, [theta] 2 represents an angle of incidence of the light to the image sensor, and [beta] 1 represents an optical magnification of the light receiving optical system.

Description

Technical Field

[0001] This disclosure relates to a testing device, a photolithography device, and a method for manufacturing an article. Background Technology

[0002] Japanese Patent No. 3204406 discloses a surface position detection device in which the object and the light-receiving optical system satisfy the Scheimpflug relation, and a diffraction grating for tilt correction is arranged on the image plane of the light-receiving optical system. Japanese Patent Application Publication No. 10-004054 discloses a surface position detection device in which the object and the light-receiving optical system satisfy the Scheimpflug relation, and a diffuser is arranged on the image plane of the light-receiving optical system. Japanese Patent No. 3271720 discloses a surface position detection device in which the object and the light-receiving optical system satisfy the Scheimpflug relation, and a prism for tilt correction is arranged on the image plane of the light-receiving optical system.

[0003] However, in conventional surface position detection devices, a deflecting optical element is required in the middle of the light receiving optical system to change the angle of incidence to the image sensor. In this case, an optical system is needed to form an image from the detection surface on the deflecting optical element, as well as an optical system to form images on both the deflecting optical element and the image sensor. Therefore, the cost of the optical system increases, and the device size also increases. Furthermore, the cost of the deflecting optical element increases. Diffraction gratings, which increase the intensity of diffracted light to a specific angle, are particularly expensive. Summary of the Invention

[0004] This disclosure provides a technique that is advantageous in balancing the accuracy and cost of surface position detection.

[0005] This disclosure provides, in its first aspect, a detection apparatus for detecting the surface position of a detection surface, comprising: a mask having a plurality of slits; a projection optical system configured to form an image on the detection surface by illuminating the detection surface from an oblique direction with light that has passed through the plurality of slits; an image sensor; and a light receiving optical system configured to form an image on the image sensor of light reflected from the detection surface, wherein the following conditions are satisfied: β1 = tanθ2 / tanθ1, 70° < θ1 < 85°, θ2 < 70°, and 0.03 < β1 < 0.40, where θ1 represents the angle of incidence of the light illuminating the detection surface by the projection optical system, θ2 represents the angle of incidence of the light illuminating the image sensor by the light receiving optical system, and β1 represents the optical magnification of the light receiving optical system.

[0006] This disclosure provides, in a second aspect, a photolithography apparatus for forming a pattern on a substrate using a master copy, comprising: a stage configured to hold the substrate; a detection device defined in the first aspect, the detection device being configured to detect the surface position of the substrate held by the stage; and a controller configured to control the position of the stage based on the detection result of the detection device.

[0007] This disclosure provides a method for manufacturing an article in its third aspect, the method comprising: a forming step of forming a pattern on a substrate using a photolithography apparatus as defined in the second aspect; a processing step of processing the substrate that has been patterned in the forming step; and a manufacturing step of manufacturing an article from the substrate processed in the processing step.

[0008] The features of this disclosure will become apparent from the following description of embodiments with reference to the accompanying drawings. The following description of embodiments is given by way of example. Attached Figure Description

[0009] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the embodiments.

[0010] Figure 1 This is a diagram showing the structure of a surface position detection device;

[0011] Figure 2 It is a graph showing the relationship between the incident angle and the surface reflectivity;

[0012] Figure 3 This is a diagram illustrating the relationships within the Schiemfleur optical system;

[0013] Figure 4 This is a diagram showing the relationship of the Schiemfle optical system in a projection optical system;

[0014] Figure 5 This is a diagram showing the relationship of the Schiemfle optical system in a light-receiving optical system;

[0015] Figure 6 This is a graph illustrating the light-receiving sensitivity of an image sensor at different incident angles;

[0016] Figure 7 It is a diagram showing an image of a projected pattern on a detection surface;

[0017] Figure 8 It is a graph showing the relationship between the optical magnification of the imaging optical system, the incident angle of the image sensor, and the pixel sensitivity to changes in surface position;

[0018] Figure 9This is an example diagram showing a projected pattern on an image sensor;

[0019] Figure 10 This is a diagram showing the structure of a surface position detection device; and

[0020] Figure 11 This is a diagram showing the structure of the exposure apparatus. Detailed Implementation

[0021] In the following, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claims. Several features are described in the embodiments, but not all of these features are necessary, and multiple features can be appropriately combined. Furthermore, in the drawings, the same reference numerals are given the same or similar constructions, and redundant descriptions are omitted.

[0022] This disclosure relates to a detection apparatus for detecting the surface position of a detection surface. The detection apparatus according to this disclosure can be applied to the control of the surface position (e.g., focus control) of a substrate in a photolithography apparatus such as an exposure apparatus or an imprinting apparatus, and can also be applied to other apparatuses such as processing apparatuses, inspection apparatuses, and microscopes.

[0023] <First Embodiment>

[0024] Reference Figure 1 The structure of the surface position detection apparatus 100 (detection apparatus) according to this embodiment is described. The surface position detection apparatus 100 detects the surface position (height of the detection target portion) of the detection surface 300. The surface position detection apparatus 100 may include a light projector 110, a light receiver 120, and a controller 130. The light projector 110 may include: a light source 111; a mask 112, which includes a plurality of slits forming a projection pattern 112a; and a projection optical system 113 that projects the projection pattern 112a onto the detection surface 300. Note that, depending on the arrangement constraints of the light projector 110, the light projector 110 may include one or more intermediate imaging points in the middle of the projection optical system 113.

[0025] The projection optical system 113 is configured to form a patterned image on the detection surface 300 by irradiating it with light that has passed through multiple slits at a predetermined angle relative to the normal of the detection surface 300 (i.e., from the tilt direction relative to the detection surface 300). In particular, in semiconductor exposure apparatuses, a photoresist 302 is coated on the detection surface 300, and most of it is light-transmitting. Figure 2The reflectance is shown in a transparent layer with a refractive index n of 1.5. Around incident angles of 0° to 45°, the average reflectance of S-polarized and P-polarized light is less than or equal to 10%, and the light transmittance is greater than or equal to 90%. If light enters at an angle greater than the Brewster angle (where the reflectance of P-polarized light is 0), the reflectance increases. To avoid the influence of the pattern under resist 302, an incident angle of 70° or greater is desirable for high reflectance.

[0026] The light receiver 120 may include an image sensor 121 and a light-receiving optical system 122. The image sensor 121 includes a plurality of pixels, and the light-receiving optical system 122 forms an image on the image sensor 121 of light reflected from the detection surface 300. Note that, depending on the arrangement constraints of the light-receiving optical system 122 and the image sensor 121, the light receiver 120 may include one or more intermediate imaging points in the middle of the light-receiving optical system 122.

[0027] The controller 130, for example, is a computer including a CPU and memory, and calculates the height of the detection surface 300 based on the detection results received by the image sensor 121. As an example of the height measurement method performed by the controller 130, there is a method that obtains the height based on the change in the direction in which the pattern image acquired via the image sensor 121 is projected onto the detection surface 300 by the light projector 110. When the height of the detection surface 300 changes, the projected pattern onto the detection surface 300 changes according to the projection direction from the light projector 110 onto the detection surface 300. The controller 130 calculates the height of the detection surface 300 by measuring the positional change of the pattern image captured on the image sensor 121.

[0028] When the mask 112 and the detection surface 300 have a relationship relative to the projection optics system 113 that satisfies the Scheimfuller condition, the entire surface of the projected pattern 112a is focused onto the detection surface 300. This improves measurement accuracy. Furthermore, when measuring the height of the detection surface 300, it prevents the measured value from being altered due to local tilting of the detection surface 300. Similarly, when the detection surface 300 and the image sensor 121 have a relationship relative to the light-receiving optics system 122 that satisfies the Scheimfuller condition, the entire surface of the image sensor 121 is focused onto the detection surface 300. This also improves measurement accuracy.

[0029] Typically, when the relationships in the Schiemfler optical system hold, the following equation is obtained. (Refer to...) Figure 3 When θ a θ represents the angle formed by the normal to the object plane 501 and the optical axis 500 of the imaging optical system 510. bWhen β represents the angle formed by the normal of the image plane 502 and the optical axis 500 of the imaging optical system 510, and β represents the optical magnification of the imaging optical system 510, the following equation (1) is obtained.

[0030] β=tanθ b / tanθ a ...(1)

[0031] Reference Figure 4 Describe the relationship of the Schiemfuller optical system in projection optical system 113. From θ1 (corresponding to...) Figure 3 θ b θ3 represents the angle of incidence of the light irradiated by the projection optics system 113 onto the detection surface 300 (resist 302). θ3 (corresponding to...) Figure 3 θ a ) represents the angle formed by the optical axis of the projection optical system 113 and the normal to the surface of the mask 112. β2 represents the optical magnification of the projection optical system 113. In this case, the optical magnification β2 of the projection optical system 113 is given by the following equation (2):

[0032] β2=tanθ1 / tanθ3...(2)

[0033] When equation (2) is satisfied, the mask 112 and the detection surface 300 have a relationship with respect to the projection optical system 113 that satisfies the Schiemfler condition.

[0034] When θ1 = 70° and the optical magnification β2 of the projection optical system 113 is 2, according to equation (2), the angle θ3 formed by the optical axis of the projection optical system 113 and the normal of the surface of the mask 112 is 54°.

[0035] Similarly, refer to Figure 5 Describe the relationship of the Schiemfler optical system in the light receiving optical system 122. θ1 represents the angle of incidence of the light irradiated by the projection optical system 113 to the detection surface 300 (resist 302). θ2 (corresponding to...) Figure 3 θ a ) represents the angle of incidence of light from the light-receiving optical system 122 to the image sensor 121. β1 represents the optical magnification of the light-receiving optical system 122. In this case, the optical magnification β1 of the light-receiving optical system 122 is given by the following equation (3):

[0036] β1=tanθ2 / tanθ1...(3)

[0037] When equation (3) is satisfied, the detection surface 300 and the image sensor 121 have a relationship with respect to the light receiving optical system 122 that satisfies the Schiemfler condition.

[0038] Here, we assume the incident angle θ1 to the detection surface 300 (resistor 302) is (corresponding to...) Figure 3 θ a The angle of incidence θ2 to the image sensor 121 is 70°, and the optical magnification β1 of the light receiving optical system 122 is 1 (i.e., equal magnification imaging). In this case, according to equation (3), the angle of incidence θ2 to the image sensor 121 is 70°, and the optical magnification β1 of the light receiving optical system 122 is 1 (i.e., equal magnification imaging). b The angle of incidence is 70°. At large incident angles, due to surface reflections on the protective surface of the image sensor 121 and the internal wiring layer of the image sensor 121, the light beam may not reach the photoelectric conversion plane, and therefore the effective light energy may not reach the pixel.

[0039] To address this situation, in the surface position detection device 100 of this embodiment, considering equation (3), the optical magnification β1 of the light receiving optical system 122 is set to be less than 1. Therefore, when θ1 is fixed, the incident angle θ2 of the image sensor 121 can be reduced. Figure 5 As an example, when θ1 = 80° and the optical magnification β1 of the light receiving optical system 122 is 0.2, θ2 = 49° is obtained. By using an image sensor 121 with sensitivity to θ2 = 49°, the image sensor 121 can be arranged on the image plane of the light receiving optical system 122 and the measurement can be performed.

[0040] Note that if an intermediate imaging is provided in the middle of the light receiving optical system 122, then even if the optical magnification of a part of the light receiving optical system 122 is greater than 1, the optical magnification from the detection surface 300 to the image sensor 121 only needs to be less than 1.

[0041] As image sensor 121, there are front-side illumination (FSI) image sensors with multi-layer wiring between the image sensor surface and the light-receiving surface, and rear-side illumination (BSI) image sensors with a light-receiving surface between the image sensor surface and the multi-layer wiring. Generally, since BSI image sensors do not include multi-layer wiring between the image sensor surface and the light-receiving surface, they are sensitive to large incident angles. In cases where light enters image sensor 121 at a large incident angle, as in this embodiment, it is desirable to use a BSI image sensor.

[0042] Figure 6 An example of light-receiving sensitivity for an image sensor at the angle of incidence is shown. (Refer to...) Figure 6Typically, as the angle of incidence to the image sensor increases from 0°, the light-receiving sensitivity of the image sensor decreases. This is due to the reduced transmittance caused by the cover glass on the surface of the image sensor and the light beam incident into the wiring layer of the image sensor. Effective light-receiving sensitivity for use is obtained when the angle of incidence is less than 70° (θ2 < 70°). The angle of incidence θ2 is preferably set to be equal to or less than the angle used to obtain the light-receiving sensitivity of the image sensor. Therefore, optical elements that deflect the angle of incidence θ2 to obtain the light-receiving sensitivity of the image sensor are not required.

[0043] Based on the measurement accuracy of the surface position detection device 100, the optical magnification β1 of the light receiving optical system 122 is preferably made closer to 1 within a range less than 1. When ds represents the change in image position on the image sensor 121 due to a change in surface position dz, the pixel sensitivity dz / ds is given by the following formula:

[0044]

[0045] When θ1 is fixed, increasing the optical magnification β1 of the light-receiving optical system 122 reduces pixel sensitivity, thereby improving measurement accuracy. For example, when θ1 = 85°, β1 = 0.2, and the pixel size of the image sensor 121 is 2.0 μm / pixel (micrometer / pixel), the pixel sensitivity to surface position changes is 2.0 μm / pixel. In contrast, if β1 is set to 0.5 and made closer to 1 within a range less than 1, the pixel sensitivity is 0.34 μm / pixel, and the measurement accuracy is improved by 5.8 times. Based on the necessary measurement accuracy, the pixel sensitivity of the image sensor 121 to the surface position changes of the detection surface 300 is preferably 0.1 μm / pixel or greater. Measurement accuracy is improved when the optical magnification is closer to 1 within the range of effective light energy obtained relative to the light-receiving sensitivity of the image sensor 121.

[0046] To obtain effective light energy relative to the light-receiving sensitivity of the image sensor 121 while prioritizing measurement speed, the optical magnification β1 of the light-receiving optical system 122 is preferably made closer to 0 in the range of less than 1. As an example, when θ1 = 70°, β1 = 0.05, and the pixel size of the image sensor 121 is 10 μm / pixel, the pixel sensitivity to surface position changes is 105 μm / pixel. Conversely, when θ1 = 85°, β1 = 0.2, and the pixel size of the image sensor 121 is 2.0 μm / pixel, the light energy per pixel increases by 3.9 times. According to equation (3), the incident angle becomes smaller, thus improving the light-receiving sensitivity. When the light energy per pixel is increased, the exposure time of the image sensor can be shortened, thereby shortening the measurement time.

[0047] In the example, the projection pattern 112a may include multiple patterns. In other words, the multiple slits of the mask 112 are formed to create multiple pattern images on the detection surface 300. Figure 7 An example of a pattern image 301 of a projected pattern 112a on a detection surface is shown. Each pattern image 301 may include multiple partial patterns 312. This allows surface position detection to be performed in multiple inspection areas 303 on the detection surface. The mask 112 and the detection surface 300 satisfy the conditions of the Scheremfuhrer optical system, and the detection surface 300 and the image sensor 121 also satisfy the conditions of the Scheremfuhrer optical system. Therefore, the pattern image 301 on the detection surface is formed with constant imaging performance, independent of position.

[0048] Figure 8 The relationship between the optical magnification β1 of the light-receiving optical system 122, the incident angle θ2 to the image sensor 121, and the pixel sensitivity dz / ds of the image sensor 121 to the surface position change of the detection surface 300 is shown. Here, it is assumed that θ1 = 80° and the pixel size is 5.5 μm / pixel. The incident angle to the image sensor 121 is determined according to equation (3), and the pixel sensitivity of the image sensor 121 to the surface position change of the detection surface 300 is determined according to equation (4). Considering that the incident angle for obtaining the effective light-receiving sensitivity of the image sensor 121 is less than 65°, the upper limit of the settable optical magnification β1 is determined based on the incident angle to the image sensor 121, and for… Figure 8 The case shown yields β1 < 0.40. Furthermore, the image sensor 121 has a pixel sensitivity of 100 μm / pixel or less to detecting changes in the surface position of the surface 300. The lower limit of the settable optical magnification is determined based on 100 μm / pixel as the upper limit of the pixel sensitivity to changes in surface position, and for… Figure 8 The case shown yields β1 > 0.03. Therefore, with θ1 = 80° and a pixel size of 5.5 μm / pixel, the optical magnification is set in the range of 0.03 < β1 < 0.40.

[0049] In summary, when θ1 represents the incident angle of the light irradiated by the projection optical system 113 to the detection surface 300, θ2 represents the incident angle of the light irradiated by the light receiving optical system 122 to the image sensor 121, and β1 represents the optical magnification of the light receiving optical system 122, the following conditions are preferably met:

[0050] 70° < θ1 < 85°

[0051] θ2 < 70°, and

[0052] 0.03 < β1 < 0.40

[0053] exist Figure 4In the configuration shown, when θ3 represents the angle formed by the optical axis of the projection optical system 113 and the normal to the surface of the mask 112, and β2 represents the optical magnification of the projection optical system, it is preferable to satisfy:

[0054] β2=tanθ1 / tanθ3

[0055] Figure 9 An example of a patterned image 304 on an image sensor 121 is shown. Because the image is formed on an image plane that satisfies the conditions of the Schiemfler optical system, its aspect ratio differs from that of the patterned image 301 on the detection surface. Figure 7 The aspect ratio of the image sensor 121 is as follows: The image sensor 121 can be an area sensor comprising two-dimensional pixels. Since an area sensor can be used to detect the surface position of the entire surface across multiple inspection areas 303 on the surface, more accurate surface position detection can be achieved.

[0056] <Second Embodiment>

[0057] Reference Figure 10 The structure of the surface position detection device 100 according to the second embodiment is described. (Refer to...) Figure 10 Image sensor 121 includes a line sensor 124 that comprises pixels in only one direction. From the viewpoint of pixel count, line sensors are faster than area sensors and have an advantage in measurement speed. Generally, line sensors are cheaper than area sensors and have an advantage in device cost.

[0058] Cylindrical lens 123 can be used in light-receiving optical system 122. When cylindrical lens 123 is used to focus light, the amount of light per pixel is increased. By using cylindrical lens 123, the reduced light energy when the light beam is incident at an angle relative to the normal of the image sensor can be compensated for, thereby obtaining the necessary amount of light.

[0059] By configuring multiple line sensors 124, surface position detection can be performed at multiple measurement locations on the detection surface 300. A beam splitter 125 can be used in the light-receiving optical system 122. By using the beam splitter 125, the number of line sensors 124 can be increased, thereby enabling more detailed surface position detection of the detection surface 300.

[0060] <Third Embodiment>

[0061] Reference Figure 11 The description includes a photolithography apparatus containing the aforementioned surface position detection device. Figure 11This diagram illustrates the construction of an exposure apparatus 400, an example of a photolithography apparatus. The exposure apparatus 400 may include, for example, an illumination optics system 401, a master stage 403 holding a master image 402, a projection optics system 404, a substrate stage 406 holding a substrate 405, a position measurement unit 407, a focus detector 408, and a controller 410. The controller 410 is, for example, formed by a computer including a CPU and memory, and controls the process of transferring the pattern of the master image 402 onto the substrate 405 (the process of exposing the substrate 405).

[0062] Exposure apparatus 400 may be an exposure apparatus (stepper) that fixes the original plate 402 (i.e., by a step-repeat method) and projects the pattern of the original plate 402 onto the substrate 405. Alternatively, exposure apparatus 400 may be a scanning exposure apparatus (scanner) that transfers the pattern of the original plate 402 onto the substrate 405 while simultaneously scanning the original plate 402 and the substrate 405 along the scanning direction (i.e., by a step-scan method).

[0063] The illumination optics system 401 uniformly illuminates the master plate 402 held by the master plate stage 403 using light emitted from a light source (not shown). Examples of exposure light are gamma rays and i rays from an ultra-high pressure mercury lamp, a KrF excimer laser, an ArF excimer laser, and an F2 laser. To fabricate smaller semiconductor devices, extreme ultraviolet (EUV) light ranging from a few nanometers (nm) to several hundred nanometers can be used as the exposure light.

[0064] The projection optics system 404 has a predetermined projection magnification and projects the pattern of the original 402 onto the substrate 405. The substrate stage 406 may include, for example, a substrate chuck 406a for holding the substrate 405 and a substrate driver 406b for driving the substrate chuck 406a (substrate 405). The substrate driver 406b is configured to move the substrate chuck 406a (substrate 405) at least in directions orthogonal to the optical axis of the projection optics system 404 (X direction, Y direction). The position measurement unit 407 includes, for example, a laser interferometer and measures the position of the substrate stage 406. The laser interferometer irradiates a laser beam onto a mirror 411 disposed on the substrate stage 406 and detects the displacement of the substrate stage 406 using the laser beam reflected by the mirror 411. Therefore, the position measurement unit 407 can obtain the current position of the substrate stage 406 based on the displacement detected by the laser interferometer.

[0065] The number of substrate stages is not limited to one. The exposure apparatus 400 may be, for example, a dual-stage exposure apparatus including two substrate stages 406. Using this dual-stage exposure apparatus, for example, while exposing a substrate on one substrate stage, a predictive exposure can be performed on another substrate on the other substrate stage.

[0066] The focus detector 408 may include the configuration of the surface position detection device 100 according to the above embodiments. By setting the area to which the pattern of the original 402 is transferred as a precision inspection area, measurements can be performed with high accuracy and high throughput.

[0067] The controller 410 can control the position of the substrate stage 406 based on the detection results of the surface position detection device (focus detector 408). While exposing the substrate 405, the controller 410 can perform focus control, such that the surface of the substrate 405 is positioned on the imaging plane (focus plane) of the projection optical system 404 according to the position on the substrate to be exposed (the position of the imaging area). For example, focus control can be achieved by driving optical elements (lenses) disposed in the projection optical system 404 or by driving the substrate stage 406 in a direction parallel to the optical axis of the projection optical system 404.

[0068] <Example of Article Manufacturing Method>

[0069] The article manufacturing method according to this embodiment is suitable for manufacturing articles, such as micro-devices like semiconductor devices or elements with fine structures. The article manufacturing method according to this embodiment includes: a formation step, forming a master pattern on a substrate using the aforementioned photolithography apparatus (exposure apparatus, imprint apparatus, etc.); and a processing step, processing the substrate on which the pattern has been formed in the aforementioned step. Furthermore, the manufacturing method includes other known steps (oxidation, film formation, deposition, doping, planarization, etching, resist removal, dicing, bonding, encapsulation, etc.). The article manufacturing method according to this embodiment is more advantageous than conventional methods in at least one aspect of article performance, quality, productivity, and production cost.

[0070] According to the various embodiments described above, a technology that is advantageous in terms of both the accuracy and cost of balancing surface position detection can be provided.

[0071] Although this disclosure has been described with reference to embodiments, it should be understood that this disclosure is not limited to the disclosed embodiments. The scope of the appended claims should be given the broadest interpretation to cover all such variations and equivalent structures and functions.

Claims

1. A detection device for detecting the surface position of a detection surface, comprising: A mask with multiple slits is formed; A projection optical system configured to form an image on the detection surface by illuminating the detection surface from an oblique direction with light that has passed through the plurality of slits; Image sensor; as well as A light-receiving optical system configured to form an image of light reflected from the detection surface on the image sensor. in, The following conditions must be met: β1 = tanθ2 / tanθ1, 70° < θ1 < 85° θ2 < 70°, and 0.03<β1<0.40， Wherein, θ1 represents the incident angle of the light irradiated by the projection optical system to the detection surface, θ2 represents the incident angle of the light irradiated by the light receiving optical system to the image sensor, and β1 represents the optical magnification of the light receiving optical system.

2. The detection device according to claim 1, wherein, Satisfying β2=tanθ1 / tanθ3, Wherein, θ3 represents the angle formed by the optical axis of the projection optical system and the normal to the mask surface, and β2 represents the optical magnification of the projection optical system.

3. The detection device according to claim 1, wherein, Under the condition that β1=tanθ2 / tanθ1, the mask and the detection surface have a relationship with respect to the projection optical system that satisfies the Schiemfler condition.

4. The detection device according to claim 2, wherein, Under the condition that β2=tanθ1 / tanθ3 is satisfied, the detection surface and the image sensor have a relationship with respect to the light receiving optical system that satisfies the Schiemfler condition.

5. The detection device according to claim 1, wherein, The image sensor has a pixel sensitivity of not less than 0.1 μm / pixel to changes in the surface position of the detected surface.

6. The detection device according to claim 1, wherein, The image sensor has a pixel sensitivity of no more than 100 μm / pixel to changes in the surface position of the detected surface.

7. The detection device according to claim 1, wherein, The plurality of slits in the mask are formed to create a plurality of patterned images on the detection surface.

8. A photolithography apparatus for forming a pattern on a substrate using a master template, comprising: A stage configured to hold the substrate; The detection apparatus as defined in any one of claims 1 to 7, wherein the detection apparatus is configured to detect the surface position of the substrate held by the stage; as well as The controller is configured to control the position of the stage based on the detection results of the detection device.

9. A method for manufacturing an article, comprising: The forming step involves forming a pattern on a substrate using the photolithography apparatus as defined in claim 8; The processing step involves processing the substrate on which the pattern has been formed in the forming step; as well as The manufacturing step involves producing an article from the substrate processed in the processing step.

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