Band-gap reference voltage source circuit, calibration method, chip and electronic equipment

Abstract

The invention provides a band-gap reference voltage source circuit, a calibration method, a chip and electronic equipment, and relates to the technical field of power management chips, the band-gap reference voltage source circuit comprises a band-gap reference core circuit, a positive temperature coefficient voltage generation circuit, a low-temperature compensation point judgment circuit, a high-temperature compensation point judgment circuit, a low-temperature compensation circuit and a high-temperature compensation circuit; the band-gap reference core circuit generates band-gap reference voltage, low-temperature / high-temperature compensation zero-temperature voltage and negative temperature coefficient voltage. The positive temperature coefficient voltage generating circuit generates positive temperature coefficient voltage; the low-temperature compensation point judgment circuit determines a low-temperature compensation initial temperature according to the low-temperature compensation zero-temperature voltage and the negative temperature coefficient voltage; the high-temperature compensation point judgment circuit determines a high-temperature compensation initial temperature according to the high-temperature compensation zero-temperature voltage and the positive temperature coefficient voltage; and when the current temperature is lower than the low-temperature compensation initial temperature or higher than the high-temperature compensation initial temperature, low-temperature / high-temperature compensation is carried out on the band-gap reference voltage through the low-temperature / high-temperature compensation circuit. And the area is reduced.

Description

Technical Field

[0001] This application relates to the field of power management chip technology, and in particular to a bandgap reference voltage source circuit, calibration method, chip, and electronic device. Background Technology

[0002] Bandgap voltage reference circuits are widely used in analog systems such as digital-to-analog converters, analog-to-digital converters, and linear regulators. The temperature drift, accuracy, and stability of the bandgap voltage reference circuit directly affect the performance of the entire system. Traditional bandgap voltage references use first-order temperature compensation and single-point calibration to linearly compensate for the temperature coefficient of the BE junction (i.e., the emitter junction of a transistor or the PN junction between the base and emitter of a transistor), obtaining a single temperature inflection point; or, by using second-order curvature compensation and dual-point calibration, they perform discontinuous compensation at high and low temperatures on the basis of first-order temperature compensation, obtaining two to three temperature inflection points. Second-order curvature compensation and discontinuous compensation can greatly improve the accuracy of the output voltage, making its temperature drift less than 10ppm.

[0003] One bandgap reference voltage source solution provided by related technologies involves, on the one hand, generating a positive temperature coefficient current through a CTAT current generation circuit and a negative temperature coefficient current through a PTAT current generation circuit to perform segmented compensation for the bandgap reference voltage at high and low temperatures. This results in a high-precision bandgap reference voltage with two temperature inflection points within the operating temperature range and low temperature drift. However, the CTAT and PTAT current generation circuits require transistors to generate the positive and negative temperature coefficient currents, which consumes additional area. On the other hand, a first compensation circuit and a second compensation circuit are also needed to perform high-temperature and low-temperature compensation for the bandgap reference voltage. These circuits require current comparators to obtain the segmented compensation temperature points, but these points are susceptible to the influence of device process corners and mismatches, making single-point calibration methods unable to guarantee accuracy.

[0004] The key problem to be solved is how to reduce the area consumed by the bandgap reference voltage source to lower the cost, and on this basis, obtain higher accuracy through single-point calibration. Summary of the Invention

[0005] This application provides a bandgap reference voltage source circuit, calibration method, chip, and electronic device to reduce the area consumed by the bandgap reference voltage source, thereby reducing the cost.

[0006] In a first aspect, this application provides a bandgap reference voltage source circuit, which includes: a bandgap reference core circuit, a positive temperature coefficient voltage generation circuit, a low temperature compensation point determination circuit, a high temperature compensation point determination circuit, a low temperature compensation circuit, and a high temperature compensation circuit. The bandgap reference core circuit is electrically connected to the positive temperature coefficient voltage generating circuit, the low temperature compensation point judgment circuit, the high temperature compensation point judgment circuit, the low temperature compensation circuit, and the high temperature compensation circuit, respectively; the positive temperature coefficient voltage generating circuit is electrically connected to the high temperature compensation point judgment circuit, the low temperature compensation point judgment circuit is electrically connected to the low temperature compensation circuit, and the high temperature compensation point judgment circuit is electrically connected to the high temperature compensation circuit. The bandgap reference core circuit is used to generate a bandgap reference voltage, a low-temperature compensated zero-temperature voltage, a high-temperature compensated zero-temperature voltage, and output a negative temperature coefficient voltage. The positive temperature coefficient voltage generating circuit is used to generate a positive temperature coefficient voltage; The low-temperature compensation point determination circuit is used to determine the low-temperature compensation starting temperature based on the low-temperature compensation zero-temperature voltage and the negative temperature coefficient voltage. The high-temperature compensation point determination circuit is used to determine the high-temperature compensation starting temperature based on the high-temperature compensation zero-temperature voltage and the positive temperature coefficient voltage. The low-temperature compensation circuit is used to perform low-temperature compensation on the bandgap reference voltage when the current temperature is lower than the low-temperature compensation start temperature. The high-temperature compensation circuit is used to perform high-temperature compensation on the bandgap reference voltage when the current temperature is higher than the high-temperature compensation start temperature.

[0007] In one possible design, the bandgap reference core circuit includes: a reference generation circuit, a first-order temperature coefficient correction circuit, a voltage correction circuit, a voltage divider circuit, and a compensation point correction circuit. The reference generation circuit is electrically connected to the first-order temperature coefficient correction circuit and the voltage correction circuit, respectively. The voltage correction circuit is electrically connected to the voltage divider circuit, and the voltage divider circuit is electrically connected to the compensation point correction circuit. The reference generation circuit is used to generate the bandgap reference voltage and output the negative temperature coefficient voltage. The first-order temperature coefficient correction circuit is used to adjust its own resistance value according to the correction adjustment signal in order to adjust the temperature drift of the bandgap reference voltage. The voltage correction circuit is used to adjust its own resistance value according to the voltage adjustment signal in order to adjust the voltage value of the bandgap reference voltage. The voltage divider circuit is used to generate a first voltage, a second voltage, a third voltage, and a fourth voltage; The compensation point correction circuit is used to generate the low-temperature compensation zero-temperature voltage and the high-temperature compensation zero-temperature voltage based on the first voltage, the second voltage, the third voltage, the fourth voltage, the low-temperature control signal, and the high-temperature control signal.

[0008] In one possible design, the reference generation circuit includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a first transistor, a second transistor, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, and a thirteenth transistor. The first end of the first resistor is electrically connected to the first end of the second resistor and the second end of the fourth resistor, respectively. The second end of the first resistor is electrically connected to the emitter of the first transistor and the gate of the third transistor, respectively, and serves as the first output terminal of the reference generation circuit for outputting the negative temperature coefficient voltage. The second end of the second resistor is electrically connected to the first end of the third resistor, the second end of the third resistor is electrically connected to the emitter of the second transistor and the gate of the fourth transistor, and the base of the first transistor is electrically connected to the base of the second transistor. The drain of the third transistor is electrically connected to the drain of the fifth transistor and the source of the seventh transistor, respectively. The source of the third transistor is electrically connected to the source of the fourth transistor, the drain of the first transistor, and the drain of the second transistor, respectively. The drain of the fourth transistor is electrically connected to the drain of the sixth transistor and the source of the eighth transistor, respectively. The gate of the first transistor is electrically connected to the gate of the second transistor, the gate of the eleventh transistor, and the gate of the twelfth transistor, respectively. The source of the fifth transistor is electrically connected to the source of the sixth transistor and the source of the thirteenth transistor, respectively, for connecting to the power supply voltage. The gate of the fifth transistor is electrically connected to the gate of the sixth transistor, the drain of the eighth transistor, and the drain of the tenth transistor, respectively. The gate of the seventh transistor is electrically connected to the gate of the eighth transistor. The drain of the seventh transistor is electrically connected to the gate of the thirteenth transistor and the drain of the ninth transistor, respectively. The gate of the ninth transistor is electrically connected to the gate of the tenth transistor. The source of the ninth transistor is electrically connected to the drain of the eleventh transistor. The source of the tenth transistor is electrically connected to the drain of the twelfth transistor. The drain of the thirteenth transistor is electrically connected to the first terminal of the fifth resistor and the first terminal of the voltage correction circuit, and serves as the second output terminal of the reference generation circuit for outputting the bandgap reference voltage; the second terminal of the fifth resistor is electrically connected to the first terminal of the first-order temperature coefficient correction circuit, and the second terminal of the first-order temperature coefficient correction circuit is electrically connected to the first terminal of the fourth resistor. The collectors of the first transistor, the second transistor, the source of the first transistor, the source of the second transistor, the source of the eleventh transistor, and the source of the twelfth transistor are all grounded.

[0009] In one possible design, the correction adjustment signal includes: a first correction adjustment signal, a second correction adjustment signal, a third correction adjustment signal, a fourth correction adjustment signal, a fifth correction adjustment signal, and a sixth correction adjustment signal; the first-order temperature coefficient correction circuit includes: a first adjustment resistor, a second adjustment resistor, a third adjustment resistor, a fourth adjustment resistor, a fifth adjustment resistor, a sixth adjustment resistor, a seventh adjustment resistor, a first switching transistor, a second switching transistor, a third switching transistor, a fourth switching transistor, a fifth switching transistor, and a sixth switching transistor; The first end of the first regulating resistor is electrically connected to the first end of the second regulating resistor and the source of the first switching transistor, and serves as the first end of the first-order temperature coefficient correction circuit; the second end of the first regulating resistor is electrically connected to the second end of the second regulating resistor, the first end of the third regulating resistor, the drain of the first switching transistor, and the source of the second switching transistor. The drain of the second switching transistor is electrically connected to the second terminal of the third adjusting resistor, the first terminal of the fourth adjusting resistor, and the source of the third switching transistor, respectively. The drain of the third switching transistor is electrically connected to the second terminal of the fourth adjusting resistor, the first terminal of the fifth adjusting resistor, and the source of the fourth switching transistor, respectively. The drain of the fourth switching transistor is electrically connected to the second terminal of the fifth adjusting resistor, the first terminal of the sixth adjusting resistor, and the source of the fifth switching transistor, respectively. The drain of the fifth switching transistor is electrically connected to the second terminal of the sixth adjusting resistor, the first terminal of the seventh adjusting resistor, and the source of the sixth switching transistor, respectively. The drain of the sixth switching transistor is electrically connected to the second terminal of the seventh adjusting resistor, and serves as the second terminal of the first-order temperature coefficient correction circuit. The gate of the first switch is connected to the first correction adjustment signal, the gate of the second switch is connected to the second correction adjustment signal, the gate of the third switch is connected to the third correction adjustment signal, the gate of the fourth switch is connected to the fourth correction adjustment signal, the gate of the fifth switch is connected to the fifth correction adjustment signal, and the gate of the sixth switch is connected to the sixth correction adjustment signal.

[0010] In one possible design, the voltage regulation signal includes: a first voltage regulation signal, a second voltage regulation signal, a third voltage regulation signal, a fourth voltage regulation signal, a fifth voltage regulation signal, and a sixth voltage regulation signal; the voltage correction circuit includes: an eighth regulating resistor, a ninth regulating resistor, a tenth regulating resistor, an eleventh regulating resistor, a twelfth regulating resistor, a thirteenth regulating resistor, a fourteenth regulating resistor, a fifteenth regulating resistor, a sixteenth regulating resistor, a seventeenth regulating resistor, a seventh switching transistor, an eighth switching transistor, a ninth switching transistor, a tenth switching transistor, an eleventh switching transistor, and a twelfth switching transistor; The source of the seventh switching transistor is electrically connected to the first terminals of the eighth, ninth, tenth, and eleventh adjusting resistors, respectively, and serves as the first terminal of the voltage correction circuit; the drain of the seventh switching transistor is electrically connected to the second terminals of the eighth, ninth, tenth, eleventh, twelfth, and thirteenth adjusting resistors, respectively, and the source of the eighth switching transistor. The drain of the eighth switching transistor is electrically connected to the second terminal of the twelfth regulating resistor, the second terminal of the thirteenth regulating resistor, the first terminal of the fourteenth regulating resistor, and the source of the ninth switching transistor, respectively. The drain of the ninth switching transistor is electrically connected to the second terminal of the fourteenth adjusting resistor, the first terminal of the fifteenth adjusting resistor, and the source of the tenth switching transistor, respectively. The drain of the tenth switching transistor is electrically connected to the second terminal of the fifteenth adjusting resistor, the first terminal of the sixteenth adjusting resistor, and the source of the eleventh switching transistor, respectively. The drain of the eleventh switching transistor is electrically connected to the second terminal of the sixteenth adjusting resistor, the first terminal of the seventeenth adjusting resistor, and the source of the twelfth switching transistor. The drain of the twelfth switching transistor is electrically connected to the second terminal of the seventeenth adjusting resistor and serves as the second terminal of the voltage correction circuit. The gate of the seventh switch is connected to the first voltage adjustment signal, the gate of the eighth switch is connected to the second voltage adjustment signal, the gate of the ninth switch is connected to the third voltage adjustment signal, the gate of the tenth switch is connected to the fourth voltage adjustment signal, the gate of the eleventh switch is connected to the fifth voltage adjustment signal, and the gate of the twelfth switch is connected to the sixth voltage adjustment signal.

[0011] In one possible design, the voltage divider circuit includes: a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, and a tenth resistor; The second terminal of the sixth resistor is grounded, and the first terminal of the sixth resistor is electrically connected to the second terminal of the seventh resistor, serving as the first output terminal of the voltage divider circuit for outputting the first voltage. The first end of the seventh resistor is electrically connected to the second end of the eighth resistor, and serves as the second output terminal of the voltage divider circuit for outputting the second voltage; The first end of the eighth resistor is electrically connected to the second end of the ninth resistor, and serves as the third output terminal of the voltage divider circuit for outputting the third voltage; The first end of the ninth resistor is electrically connected to the second end of the tenth resistor and serves as the fourth output terminal of the voltage divider circuit for outputting the fourth voltage. The first terminal of the tenth resistor is electrically connected to the second terminal of the voltage correction circuit.

[0012] In one possible design, the low-temperature control signal includes: a first low-temperature control signal, a second low-temperature control signal, a third low-temperature control signal, and a fourth low-temperature control signal; the high-temperature control signal includes: a first high-temperature control signal, a second high-temperature control signal, a third high-temperature control signal, and a fourth high-temperature control signal; the compensation point correction circuit includes: a thirteenth switch, a fourteenth switch, a fifteenth switch, a sixteenth switch, a seventeenth switch, an eighteenth switch, a nineteenth switch, and a twentieth switch. The source of the thirteenth switch is used as the fourth input terminal of the compensation point correction circuit and is electrically connected to the fourth output terminal of the voltage divider circuit to receive the fourth voltage. The drain of the thirteenth switch is electrically connected to the drain of the fourteenth switch, the drain of the fifteenth switch, and the drain of the sixteenth switch to output the low temperature compensation zero temperature voltage. The source of the fourteenth switch serves as the third input terminal of the compensation point correction circuit and is electrically connected to the third output terminal of the voltage divider circuit to receive the third voltage; the source of the fifteenth switch serves as the second input terminal of the compensation point correction circuit and is electrically connected to the second output terminal of the voltage divider circuit to receive the second voltage; the source of the sixteenth switch serves as the first input terminal of the compensation point correction circuit and is electrically connected to the first output terminal of the voltage divider circuit to receive the first voltage. The source of the seventeenth switch is used as the fourth input terminal of the compensation point correction circuit and is electrically connected to the fourth output terminal of the voltage divider circuit to receive the fourth voltage. The drain of the seventeenth switch is electrically connected to the drain of the eighteenth switch, the drain of the nineteenth switch, and the drain of the twentieth switch to output the high temperature compensation zero temperature voltage. The source of the eighteenth switch serves as the third input terminal of the compensation point correction circuit and is electrically connected to the third output terminal of the voltage divider circuit to receive the third voltage; the source of the nineteenth switch serves as the second input terminal of the compensation point correction circuit and is electrically connected to the second output terminal of the voltage divider circuit to receive the second voltage; the source of the twentieth switch serves as the first input terminal of the compensation point correction circuit and is electrically connected to the first output terminal of the voltage divider circuit to receive the first voltage. The gate of the thirteenth switch is connected to the first low-temperature control signal, the gate of the fourteenth switch is connected to the second low-temperature control signal, the gate of the fifteenth switch is connected to the third low-temperature control signal, and the gate of the sixteenth switch is connected to the fourth low-temperature control signal; the gate of the seventeenth switch is connected to the first high-temperature control signal, the gate of the eighteenth switch is connected to the second high-temperature control signal, the gate of the nineteenth switch is connected to the third high-temperature control signal, and the gate of the twentieth switch is connected to the fourth high-temperature control signal.

[0013] In one possible design, the positive temperature coefficient voltage generating circuit includes: an eleventh resistor, a twelfth resistor, a fourteenth transistor, and a fifteenth transistor; The source of the fourteenth transistor is connected to the power supply voltage, the gate of the fourteenth transistor is electrically connected to the gate of the thirteenth transistor, and the drain of the fourteenth transistor is electrically connected to the first terminal of the eleventh resistor and the first terminal of the twelfth resistor, respectively, and serves as the output terminal of the positive temperature coefficient voltage generating circuit for outputting the positive temperature coefficient voltage. The second end of the eleventh resistor is electrically connected to the second end of the twelfth resistor and the drain of the fifteenth transistor, the source of the fifteenth transistor is grounded, and the gate of the fifteenth transistor is connected to the first enable signal.

[0014] In one possible design, the low-temperature compensation point determination circuit includes: a sixteenth transistor, a seventeenth transistor, an eighteenth transistor, a nineteenth transistor, a twentieth transistor, a twenty-first transistor, a twenty-second transistor, and a first current source; The gate of the 22nd transistor is connected to a second enable signal, the source of the 22nd transistor is connected to the power supply voltage, and the drain of the 22nd transistor is electrically connected to the input terminal of the first current source. The output terminal of the first current source is electrically connected to the source of the sixteenth transistor and the source of the seventeenth transistor, respectively. The drain of the sixteenth transistor is electrically connected to the drain of the eighteenth transistor and the gate of the eighteenth transistor, respectively. The source of the eighteenth transistor is electrically connected to the drain of the twentieth transistor and the gate of the twentieth transistor, respectively. The drain of the seventeenth transistor is electrically connected to the drain of the nineteenth transistor and the gate of the nineteenth transistor, respectively, and the source of the nineteenth transistor is electrically connected to the drain of the twenty-first transistor and the gate of the twenty-first transistor, respectively. The gate of the sixteenth transistor is connected to the low-temperature compensation zero-temperature voltage, the gate of the seventeenth transistor is connected to the negative temperature coefficient voltage, the source of the twentieth transistor is grounded, and the source of the twenty-first transistor is grounded.

[0015] In one possible design, the high-temperature compensation point determination circuit includes: a 23rd transistor, a 24th transistor, a 25th transistor, a 26th transistor, a 27th transistor, a 28th transistor, a 29th transistor, and a second current source; The gate of the 29th transistor is connected to a second enable signal, the source of the 29th transistor is connected to the power supply voltage, and the drain of the 29th transistor is electrically connected to the input terminal of the second current source. The output terminal of the second current source is electrically connected to the source of the 23rd transistor and the source of the 24th transistor, respectively. The drain of the 24th transistor is electrically connected to the drain of the 25th transistor and the gate of the 25th transistor, respectively. The source of the 25th transistor is electrically connected to the drain of the 27th transistor and the gate of the 27th transistor, respectively. The drain of the 23rd transistor is electrically connected to the drain of the 26th transistor and the gate of the 26th transistor, respectively; and the source of the 26th transistor is electrically connected to the drain of the 28th transistor and the gate of the 28th transistor, respectively. The gate of the 23rd transistor is connected to the positive temperature coefficient voltage, the gate of the 24th transistor is connected to the high temperature compensation zero temperature voltage, the source of the 27th transistor is grounded, and the source of the 28th transistor is grounded.

[0016] In one possible design, the low-temperature compensation circuit includes: a thirtieth transistor, a thirty-first transistor, a thirty-second transistor, a thirty-third transistor, and a third current source; the thirtieth transistor is a Native NMOS transistor. The gate of the thirtieth transistor is connected to the bandgap reference voltage, the drain of the thirtieth transistor is connected to the power supply voltage, the source of the thirtieth transistor is electrically connected to the drain of the thirty-first transistor, the gate of the thirty-first transistor is electrically connected to the gate of the nineteenth transistor, the gate of the thirty-second transistor is electrically connected to the gate of the eighteenth transistor, and the drain of the thirty-second transistor is electrically connected to the second terminal of the fifth resistor. The source of the thirty-first transistor is electrically connected to the source of the thirty-second transistor and the input terminal of the third current source, respectively. The output terminal of the third current source is electrically connected to the drain of the thirty-third transistor. The gate of the thirty-third transistor is connected to the first enable signal, and the source of the thirty-third transistor is grounded.

[0017] In one possible design, the high-temperature compensation circuit includes: a thirty-fourth transistor, a thirty-fifth transistor, a thirty-sixth transistor, a thirty-seventh transistor, and a fourth current source; the thirty-fourth transistor is a Native NMOS transistor. The gate of the thirty-fourth transistor is connected to the bandgap reference voltage, the drain of the thirty-fourth transistor is connected to the power supply voltage, the source of the thirty-fourth transistor is electrically connected to the drain of the thirty-fifth transistor, the gate of the thirty-fifth transistor is electrically connected to the gate of the twenty-fifth transistor, the gate of the thirty-seventh transistor is electrically connected to the gate of the twenty-sixth transistor, and the drain of the thirty-seventh transistor is electrically connected to the second terminal of the fifth resistor. The source of the thirty-fifth transistor is electrically connected to the source of the thirty-seventh transistor and the input terminal of the fourth current source, respectively. The output terminal of the fourth current source is electrically connected to the drain of the thirty-sixth transistor. The gate of the thirty-sixth transistor is connected to the first enable signal, and the source of the thirty-sixth transistor is grounded.

[0018] In a second aspect, this application provides a method for calibrating a bandgap reference voltage source, wherein the method is applied to a bandgap reference voltage source circuit as described in the first aspect, and the method includes: After fabrication, for each trimming code value, the bandgap reference voltage corresponding to the trimming code value is detected, and the temperature curve of the bandgap reference voltage is obtained. The trimming code value is a positive integer greater than or equal to zero, and the correction adjustment signal is the signal obtained after binary conversion of the trimming code value. For each of the temperature curves, determine the extreme temperature of the temperature curve; For each temperature curve, with the extreme temperature as the center, record the voltages corresponding to the same preset step size temperatures on the left and right sides to obtain the first deviation voltage and the second deviation voltage. Calculate the absolute value of the difference between the first deviation voltage and the second deviation voltage to obtain multiple deviation voltages; Find the minimum value among the multiple deviation voltages, and take the adjustment code value corresponding to the minimum value among the multiple deviation voltages as the target adjustment code value, and burn the target adjustment code value into the chip where the bandgap reference voltage source circuit is located; The absolute value of the bandgap reference voltage is detected at room temperature; When the absolute value of the bandgap reference voltage is greater than or equal to 1.246V, the target adjustment code value is subtracted from the preset code value to determine the final adjustment code value; When the absolute value of the bandgap reference voltage is less than or equal to 1.21V, the target adjustment code value is added to the preset code value to determine the final adjustment code value. After the final adjustment code value is determined, the bandgap reference voltage is compensated for either high temperature or low temperature.

[0019] Thirdly, this application provides a chip including: a bandgap reference voltage source circuit as described in the first aspect.

[0020] Fourthly, this application provides an electronic device that includes the chip described in the third aspect.

[0021] The beneficial effects of the embodiments of this application are as follows: In this embodiment, a negative temperature coefficient voltage (VLT) is directly generated by the bandgap reference core circuit, and a positive temperature coefficient voltage (VHT) is generated by the positive temperature coefficient voltage generation circuit. Compared with solutions provided by related technologies, there is no need for an additional CTAT current generation circuit to generate a positive temperature coefficient current, or a PTAT current generation circuit to generate a negative temperature coefficient current. This results in fewer components and less area required in the bandgap reference voltage source circuit, thus reducing costs. Furthermore, the bandgap reference core circuit also generates a bandgap reference voltage, a low-temperature compensation zero-temperature voltage, and a high-temperature compensation zero-temperature voltage. This allows the low-temperature compensation point determination circuit and the high-temperature compensation point determination circuit to determine the low-temperature compensation start temperature and the high-temperature compensation start temperature, respectively. Based on these temperatures, the low-temperature compensation circuit and the high-temperature compensation circuit perform high-temperature compensation and low-temperature compensation on the bandgap reference voltage, thereby reducing the temperature drift of the bandgap reference voltage and making it more stable. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained based on these drawings.

[0023] Figure 1 A bandgap reference voltage source provided for related technologies; Figure 2 A schematic diagram of the circuit structure of a bandgap reference voltage source circuit provided in this application; Figure 3 A circuit diagram of a bandgap reference voltage source circuit provided in this application; Figure 4 A schematic diagram of the circuit structure of a first-order temperature coefficient correction circuit provided in an embodiment of this application; Figure 5 A schematic diagram of the circuit structure of a voltage correction circuit provided in an embodiment of this application; Figure 6 This is a schematic diagram of the circuit structure of a compensation point correction circuit provided in an embodiment of this application. Detailed Implementation

[0024] In this application, "at least one" means one or more, and "more than one" means two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can mean: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c alone can mean: a alone, b alone, c alone, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0025] The terms “center,” “longitudinal,” “lateral,” “up,” “down,” “left,” “right,” “front,” and “rear,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0026] The terms "connected" and "connected" should be interpreted broadly. For example, in circuit structures, "connected" or "connected" can refer not only to physical connections but also to electrical or signal connections. This could be a direct connection (physical connection) or an indirect connection via at least one intermediate component, as long as the circuit is connected. It could also refer to the internal connection between two components. Similarly, a signal connection can refer to a connection via a circuit or a medium, such as radio waves. Those skilled in the art will understand the specific meaning of these terms in this application based on the specific circumstances.

[0027] See Figure 1 , Figure 1 A bandgap reference voltage source provided for related technologies, such as Figure 1 As shown, the circuit includes: a CTAT current generating circuit, a PTAT current generating circuit, a first compensation circuit, a second compensation circuit, a high-temperature / low-temperature compensation current correction circuit, a core circuit, a first-order correction circuit, a compensation resistor, and a switch KM. The CTAT current generating circuit is electrically connected to the first compensation circuit and the second compensation circuit, respectively. The PTAT current generating circuit is electrically connected to the first compensation circuit and the second compensation circuit, respectively. Both the first compensation circuit and the second compensation circuit are electrically connected to the high-temperature / low-temperature compensation current correction circuit. The high-temperature / low-temperature compensation current correction circuit is electrically connected to the first-order correction circuit and the compensation resistor through the switch KM, respectively. The core circuit is electrically connected to the first-order correction circuit, and one end of the compensation resistor is grounded. The core circuit generates a bandgap reference voltage. A first-order correction circuit is used to calibrate the bandgap reference voltage. A CTAT current generation circuit generates a positive temperature coefficient current, and a PTAT current generation circuit generates a negative temperature coefficient current. A first compensation circuit and a second compensation circuit obtain a first compensation current and a second compensation current based on the positive temperature coefficient current and the negative temperature coefficient current. A high-temperature / low-temperature compensation current correction circuit performs high-temperature compensation and low-temperature compensation on the bandgap reference voltage when switch KM is turned on, based on the first compensation current and the second compensation current. The bandgap reference voltage is adjusted through a compensation resistor.

[0028] This scheme generates a positive temperature coefficient current through a CTAT current generation circuit and a negative temperature coefficient current through a PTAT current generation circuit to perform segmented compensation for the bandgap reference voltage at high and low temperatures. This results in a high-precision bandgap reference voltage with two temperature inflection points within the operating temperature range, achieving low temperature drift. While the above circuit achieves low temperature drift, it requires additional CTAT and PTAT current generation circuits to generate the corresponding positive and negative temperature coefficient currents for higher-order compensation. Furthermore, the CTAT and PTAT current generation circuits require transistors to generate the positive and negative temperature coefficient currents, consuming additional area. Additionally, the first and second compensation circuits require current comparators to obtain the segmented compensation temperature points. Although the current comparators have high gain and can quickly increase the compensation current to the set value, the segmented compensation temperature points are susceptible to the influence of device process angles and mismatches. Under the influence of device process angles and mismatches, the temperature drift curve of the first-order corrected bandgap reference voltage will exhibit a positive or negative temperature trend, making single-point calibration unable to guarantee accuracy.

[0029] To address the aforementioned problems in related technologies, this application provides a bandgap reference voltage source circuit, see [link to relevant documentation]. Figure 2 , Figure 2 A circuit structure diagram of a bandgap reference voltage source circuit provided in this application is shown below. Figure 2 As shown, the bandgap reference voltage source circuit 1000 may include: a bandgap reference core circuit 100, a positive temperature coefficient voltage generation circuit 200, a low temperature compensation point determination circuit 300, a high temperature compensation point determination circuit 400, a low temperature compensation circuit 500, and a high temperature compensation circuit 600.

[0030] The bandgap reference core circuit 100 is electrically connected to the positive temperature coefficient voltage generating circuit 200, the low temperature compensation point judgment circuit 300, the high temperature compensation point judgment circuit 400, the low temperature compensation circuit 500, and the high temperature compensation circuit 600, respectively. The positive temperature coefficient voltage generating circuit 200 is electrically connected to the high temperature compensation point judgment circuit 400, the low temperature compensation point judgment circuit 300 is electrically connected to the low temperature compensation circuit 500, and the high temperature compensation point judgment circuit 400 is electrically connected to the high temperature compensation circuit 600.

[0031] The bandgap reference core circuit 100 is used to generate the bandgap reference voltage VBG, the low-temperature compensation zero-temperature voltage VCONST_LT, the high-temperature compensation zero-temperature voltage VCONST_HT, and output the negative temperature coefficient voltage VLT.

[0032] Positive temperature coefficient voltage generation circuit 200 is used to generate positive temperature coefficient voltage VHT.

[0033] The low-temperature compensation point determination circuit 300 is used to determine the low-temperature compensation starting temperature based on the low-temperature compensation zero-temperature voltage VCONST_LT and the negative temperature coefficient voltage VLT.

[0034] The high temperature compensation point determination circuit 400 is used to determine the high temperature compensation start temperature based on the high temperature compensation zero temperature voltage VCONST_HT and the positive temperature coefficient voltage VHT.

[0035] The low-temperature compensation circuit 500 is used to perform low-temperature compensation on the bandgap reference voltage VBG when the current temperature is lower than the low-temperature compensation start temperature.

[0036] The high-temperature compensation circuit 600 is used to perform high-temperature compensation on the bandgap reference voltage VBG when the current temperature is higher than the high-temperature compensation start temperature.

[0037] The bandgap reference voltage source circuit 1000 in this application is used in analog system chips such as digital-to-analog converters, analog-to-digital converters, and linear regulators to output a bandgap reference voltage VBG. The bandgap reference voltage source circuit 1000 typically has a temperature compensation function, which makes the bandgap reference voltage VBG more stable by performing first-order and higher-order temperature compensation on the bandgap reference voltage VBG.

[0038] In this embodiment, the bandgap reference voltage VBG, the low-temperature compensation zero-temperature voltage VCONST_LT, and the high-temperature compensation zero-temperature voltage VCONST_HT are generated by the bandgap reference core circuit 100, and a negative temperature coefficient voltage VLT is also output. Additionally, a positive temperature coefficient voltage VHT is generated by the positive temperature coefficient voltage generation circuit 200. This allows the low-temperature compensation point determination circuit 300 to determine the low-temperature compensation starting temperature based on the low-temperature compensation zero-temperature voltage VCONST_LT and the negative temperature coefficient voltage VLT. When the current temperature is lower than the low-temperature compensation starting temperature, the bandgap reference voltage VBG is compensated for low temperature using the low-temperature compensation circuit 500. Similarly, the high-temperature compensation point determination circuit 400 can determine the high-temperature compensation starting temperature based on the high-temperature compensation zero-temperature voltage VCONST_HT and the positive temperature coefficient voltage VHT. When the current temperature is higher than the high-temperature compensation starting temperature, the bandgap reference voltage VBG is compensated for high temperature using the high-temperature compensation circuit 600. This achieves segmented compensation of the bandgap reference voltage VBG for both high and low temperatures.

[0039] In this embodiment, a negative temperature coefficient voltage (VLT) is directly generated by the bandgap reference core circuit, and a positive temperature coefficient voltage (VHT) is generated by the positive temperature coefficient voltage generation circuit. Compared with solutions provided by related technologies, there is no need for an additional CTAT current generation circuit to generate a positive temperature coefficient current, or a PTAT current generation circuit to generate a negative temperature coefficient current. This results in fewer components and less area required in the bandgap reference voltage source circuit, thus reducing costs. Furthermore, the bandgap reference core circuit also generates a bandgap reference voltage, a low-temperature compensation zero-temperature voltage, and a high-temperature compensation zero-temperature voltage. This allows the low-temperature compensation point determination circuit and the high-temperature compensation point determination circuit to determine the low-temperature compensation start temperature and the high-temperature compensation start temperature, respectively. Based on these temperatures, the low-temperature compensation circuit and the high-temperature compensation circuit perform high-temperature compensation and low-temperature compensation on the bandgap reference voltage, thereby reducing the temperature drift of the bandgap reference voltage and making it more stable.

[0040] In one possible embodiment, see Figure 3 , Figure 3 A circuit diagram of a bandgap reference voltage source circuit provided in this application is shown below. Figure 3 As shown, the bandgap reference core circuit 100 may include: a reference generation circuit 10, a first-order temperature coefficient correction circuit 11 (i.e., TC TRIM), a voltage correction circuit 12 (i.e., VT TRIM), a voltage divider circuit 13, and a compensation point correction 14 (i.e., VCONST_TRIM).

[0041] The reference generation circuit 10 is electrically connected to the first-order temperature coefficient correction circuit 11 and the voltage correction circuit 12, respectively. The voltage correction circuit 12 is electrically connected to the voltage divider circuit 13, and the voltage divider circuit 13 is electrically connected to the compensation point correction circuit 14.

[0042] The reference generation circuit 10 is used to generate the bandgap reference voltage VBG and output the negative temperature coefficient voltage VLT.

[0043] The first-order temperature coefficient correction circuit 11 is used to adjust its own resistance value according to the correction adjustment signal TC_TRIM<5:0> to adjust the temperature drift of the bandgap reference voltage VBG.

[0044] The voltage correction circuit 12 is used to adjust its own resistance value according to the voltage adjustment signal V_TRIM<5:0>, so as to adjust the voltage value of the bandgap reference voltage VBG.

[0045] Voltage divider circuit 13 is used to generate a first voltage V1, a second voltage V2, a third voltage V3, and a fourth voltage V4.

[0046] The compensation point correction circuit 14 is used to generate the low-temperature compensation zero-temperature voltage VCONST_LT and the high-temperature compensation zero-temperature voltage VCONST_HT based on the first voltage V1, the second voltage V2, the third voltage V3, the fourth voltage V4, the low-temperature control signal TR_COMP_HT<3:0>, and the high-temperature control signal TR_COMP_LT<3:0>.

[0047] Based on the above embodiments, the bandgap reference core circuit 100 is used to generate a bandgap reference voltage VBG, a low-temperature compensation zero-temperature voltage VCONST_LT, and a high-temperature compensation zero-temperature voltage VCONST_HT, and outputs a negative temperature coefficient voltage VLT. In this embodiment, the bandgap reference core circuit 100 may include: a reference generation circuit 10, a first-order temperature coefficient correction circuit 11, a voltage correction circuit 12, a voltage divider circuit 13, and a compensation point correction circuit 14. The reference generation circuit 10 generates a bandgap reference voltage VBG and outputs a negative temperature coefficient voltage VLT. The compensation point correction circuit 14 generates the low-temperature compensation zero-temperature voltage VCONST_LT and the high-temperature compensation zero-temperature voltage VCONST_HT based on the first voltage V1, the second voltage V2, the third voltage V3, and the fourth voltage V4 generated by the voltage divider circuit, and the low-temperature control signal TR_COMP_LT<3:0> and the high-temperature control signal TR_COMP_HT<3:0> output by the system.

[0048] Based on this, the first-order temperature coefficient correction circuit 11 adjusts its resistance according to the system output correction adjustment signal TC_TRIM<5:0> to regulate the temperature drift of the bandgap reference voltage VBG. The voltage correction circuit 12 adjusts its resistance according to the system output voltage adjustment signal V_TRIM<5:0> to regulate the voltage value of the bandgap reference voltage VBG. Furthermore, the connection point between the voltage correction circuit 12 and the voltage divider circuit 13 serves as the output terminal of the reference voltage, outputting a 1.2V reference voltage (i.e., VREF_1p2) to provide a reference voltage for external circuits. After the bandgap reference voltage VBG is calibrated, by adjusting the voltage correction circuit 12, the voltage value of the bandgap reference voltage VBG is adjusted so that the output terminal of the reference voltage outputs a 1.2V reference voltage that is closer to the true 1.2V.

[0049] In one possible embodiment, see Figure 3The reference generation circuit 10 may include: a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first transistor QP1, a second transistor QP2, a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a ninth transistor M9, a tenth transistor M10, an eleventh transistor M11, a twelfth transistor M12, and a thirteenth transistor M13.

[0050] The first end of the first resistor R1 is electrically connected to the first end of the second resistor R2 and the second end of the fourth resistor R4. The second end of the first resistor R1 is electrically connected to the emitter QP1 of the first transistor and the gate of the third transistor M3, and serves as the first output terminal of the reference generation circuit 10 for outputting the negative temperature coefficient voltage VLT.

[0051] The second end of the second resistor R2 is electrically connected to the first end of the third resistor R3. The second end of the third resistor R3 is electrically connected to the emitter of the second transistor QP2 and the gate of the fourth transistor M4, respectively. The base of the first transistor QP1 is electrically connected to the base of the second transistor QP2.

[0052] The drain of the third transistor M3 is electrically connected to the drain of the fifth transistor M5 and the source of the seventh transistor M7. The source of the third transistor M3 is electrically connected to the source of the fourth transistor M4, the drain of the first transistor M1, and the drain of the second transistor M2. The drain of the fourth transistor M4 is electrically connected to the drain of the sixth transistor M6 and the source of the eighth transistor M8. The gate of the first transistor M1 is electrically connected to the gate of the second transistor M2, the gate of the eleventh transistor M11, and the gate of the twelfth transistor M12.

[0053] The source of the fifth transistor M5 is electrically connected to the source of the sixth transistor M6 and the source of the thirteenth transistor M13, respectively, for connecting to the power supply voltage VDD. The gate of the fifth transistor M5 is electrically connected to the gate of the sixth transistor M6, the drain of the eighth transistor M8, and the drain of the tenth transistor M10, respectively. The gate of the seventh transistor M7 is electrically connected to the gate of the eighth transistor M8.

[0054] The drain of the seventh transistor M7 is electrically connected to the gate of the thirteenth transistor M13 and the drain of the ninth transistor M9. The gate of the ninth transistor M9 is electrically connected to the gate of the tenth transistor M10. The source of the ninth transistor M9 is electrically connected to the drain of the eleventh transistor M11. The source of the tenth transistor M10 is electrically connected to the drain of the twelfth transistor M12.

[0055] The drain of the thirteenth transistor M13 is electrically connected to the first terminal of the fifth resistor R5 and the first terminal of the voltage correction circuit 12, and serves as the second output terminal of the reference generation circuit 10 for outputting the bandgap reference voltage VBG; the second terminal of the fifth resistor R5 is electrically connected to the first terminal of the first-order temperature coefficient correction circuit 11, and the second terminal of the first-order temperature coefficient correction circuit 11 is electrically connected to the first terminal of the fourth resistor R4.

[0056] The collectors of the first transistor QP1, the collector of the second transistor QP2, the source of the first transistor M1, the source of the second transistor M2, the source of the eleventh transistor M11, and the source of the twelfth transistor M12 are all grounded (AVSS).

[0057] Among them, the first transistor QP1 and the second transistor QP2 are bipolar junction transistors (BJTs), and both the first transistor QP1 and the second transistor QP2 are NPN bipolar junction transistors.

[0058] The first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the ninth transistor M9, the tenth transistor M10, the eleventh transistor M11, and the twelfth transistor M12 can be any one of gallium nitride transistors, insulated-gate bipolar transistors, and metal-oxide-semiconductor field-effect transistors. Furthermore, the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the ninth transistor M9, the tenth transistor M10, the eleventh transistor M11, and the twelfth transistor M12 are all N-type transistors. For example, the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the ninth transistor M9, the tenth transistor M10, the eleventh transistor M11, and the twelfth transistor M12 can all be N-type MOSFETs.

[0059] The fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, and the thirteenth transistor M13 can be any of the following types: gallium nitride transistor, insulated-gate bipolar transistor, and metal-oxide-semiconductor field-effect transistor. Furthermore, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, and the thirteenth transistor M13 are P-type transistors. For example, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, and the thirteenth transistor M13 can all be P-type MOSFETs.

[0060] See Figure 3The reference generation circuit 10 utilizes the negative temperature coefficient voltage characteristic of the bipolar junction transistor (BJT) to output a negative temperature coefficient voltage VLT through the emitter of the first transistor QP1.

[0061] Furthermore, an operational amplifier is constructed using transistors M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, and M12. The gates of transistors M3 and M4 serve as the non-inverting and inverting inputs of the operational amplifier, respectively. The drain of transistor M7 serves as the output of the operational amplifier and is electrically connected to the gate of transistor M13. The drain of transistor M13 serves as the second output of the reference generation circuit 10, outputting the bandgap reference voltage VBG.

[0062] In one possible embodiment, see Figure 4 , Figure 4 A schematic diagram of a first-order temperature coefficient correction circuit provided in this application embodiment is shown below. Figure 4 As shown, the correction adjustment signal TC_TRIM<5:0> includes: the first correction adjustment signal TC_TRIM <0> Second correction adjustment signal TC_TRIM <1> The third correction adjustment signal TC_TRIM <2> Fourth correction adjustment signal TC_TRIM <3> Fifth correction adjustment signal TC_TRIM <4> And the sixth correction adjustment signal TC_TRIM <5> The first-order temperature coefficient correction circuit 11 (i.e., TC TRIM) includes: a first regulating resistor RT1, a second regulating resistor RT2, a third regulating resistor RT3, a fourth regulating resistor RT4, a fifth regulating resistor RT5, a sixth regulating resistor RT6, a seventh regulating resistor RT7, a first switching transistor Q1, a second switching transistor Q2, a third switching transistor Q3, a fourth switching transistor Q4, a fifth switching transistor Q5, and a sixth switching transistor Q6.

[0063] The first end of the first regulating resistor RT1 is electrically connected to the first end of the second regulating resistor RT2 and the source of the first switching transistor Q1, and serves as the first end of the first-order temperature coefficient correction circuit 11; the second end of the first regulating resistor RT1 is electrically connected to the second end of the second regulating resistor RT2, the first end of the third regulating resistor RT3, the drain of the first switching transistor Q1, and the source of the second switching transistor Q2.

[0064] The drain of the second switch Q2 is electrically connected to the second terminal of the third regulating resistor RT3, the first terminal of the fourth regulating resistor RT4, and the source of the third switch Q3, respectively. The drain of the third switch Q3 is electrically connected to the second terminal of the fourth regulating resistor RT4, the first terminal of the fifth regulating resistor RT5, and the source of the fourth switch Q4, respectively.

[0065] The drain of the fourth switch Q4 is electrically connected to the second terminal of the fifth regulating resistor RT5, the first terminal of the sixth regulating resistor RT6, and the source of the fifth switch Q5, respectively. The drain of the fifth switch Q5 is electrically connected to the second terminal of the sixth regulating resistor RT6, the first terminal of the seventh regulating resistor RT7, and the source of the sixth switch Q6, respectively.

[0066] The drain of the sixth switching transistor Q6 is electrically connected to the second terminal of the seventh regulating resistor RT7, and serves as the second terminal of the first-order temperature coefficient correction circuit 11.

[0067] The gate of the first switch Q1 is connected to the first correction adjustment signal TC_TRIM. <0> The gate of the second switch Q2 is connected to the second correction adjustment signal TC_TRIM. <1> The gate of the third switch Q3 is connected to the third correction adjustment signal TC_TRIM. <2> The gate of the fourth switch Q4 is connected to the fourth correction adjustment signal TC_TRIM. <3> The gate of the fifth switch Q5 is connected to the fifth correction adjustment signal TC_TRIM. <4> The gate of the sixth switch Q5 is connected to the sixth correction adjustment signal TC_TRIM. <5> .

[0068] The first switch Q1, second switch Q2, third switch Q3, fourth switch Q4, fifth switch Q5, and sixth switch Q6 can be any one of the following: gallium nitride transistor, bipolar junction transistor, insulated gate bipolar transistor, metal-oxide-semiconductor field-effect transistor, field-controlled thyristor, gate turn-off thyristor, and transmission gate. Furthermore, the first switch Q1, second switch Q2, third switch Q3, fourth switch Q4, fifth switch Q5, and sixth switch Q6 are P-type transistors. For example, the first switch Q1, second switch Q2, third switch Q3, fourth switch Q4, fifth switch Q5, and sixth switch Q6 can all be P-type MOSFETs.

[0069] The correction adjustment signal TC_TRIM<5:0> is obtained through the first correction adjustment signal TC_TRIM <0> Second correction adjustment signal TC_TRIM <1> The third correction adjustment signal TC_TRIM <2> Fourth correction adjustment signal TC_TRIM <3> Fifth correction adjustment signal TC_TRIM <4> And the sixth correction adjustment signal TC_TRIM <5> The signal is a six-bit binary sequence, where "0" represents a low level and "1" represents a high level. In one example, if the correction adjustment signal TC_TRIM<5:0> is 001011, then the first correction adjustment signal TC_TRIM... <0> 1. Second correction adjustment signal TC_TRIM <1> 1. The third correction adjustment signal TC_TRIM <2> 0, fourth correction adjustment signal TC_TRIM <3> 1. Fifth correction adjustment signal TC_TRIM <4> =0, sixth correction adjustment signal TC_TRIM <5> It is 0.

[0070] By controlling the first correction adjustment signal TC_TRIM <0> Second correction adjustment signal TC_TRIM <1> The third correction adjustment signal TC_TRIM <2> Fourth correction adjustment signal TC_TRIM <3> Fifth correction adjustment signal TC_TRIM <4> And the sixth correction adjustment signal TC_TRIM <5> The circuit is set to a high or low level to control the switching states of the first switch Q1, the second switch Q2, the third switch Q3, the fourth switch Q4, the fifth switch Q5, and the sixth switch Q6. By adjusting the series and parallel relationships between the first regulating resistor RT1, the second regulating resistor RT2, the third regulating resistor RT3, the fourth regulating resistor RT4, the fifth regulating resistor RT5, the sixth regulating resistor RT6, and the seventh regulating resistor RT7, the resistance value of the first-order temperature coefficient correction circuit 11 is adjusted to regulate the temperature drift of the bandgap reference voltage VBG.

[0071] It should be noted that the number of series or parallel regulating resistors in the first-order temperature coefficient correction circuit 11 can be set according to user needs. Similarly, the number of switching transistors can also be set according to user needs. When the number of switching transistors changes, the number of bits in the corresponding correction adjustment signal also needs to change accordingly to achieve control of the switching state of each switching transistor through the correction adjustment signal. For example, when the number of switching transistors is 10, the number of bits in the correction adjustment signal is also 10 bits.

[0072] In one possible embodiment, see Figure 5 , Figure 5 A schematic diagram of the circuit structure of a voltage correction circuit provided in an embodiment of this application is shown below. Figure 5As shown, the voltage regulation signal V_TRIM<5:0> includes: the first voltage regulation signal V_TRIM <0> Second voltage regulation signal V_TRIM <1> The third voltage regulation signal V_TRIM <2> Fourth voltage regulation signal V_TRIM <3> Fifth voltage regulation signal V_TRIM <4> And the sixth voltage adjustment signal V_TRIM <5> The voltage correction circuit 12 may include: an eighth regulating resistor RT8, a ninth regulating resistor RT9, a tenth regulating resistor RT10, an eleventh regulating resistor RT11, a twelfth regulating resistor RT12, a thirteenth regulating resistor RT13, a fourteenth regulating resistor RT14, a fifteenth regulating resistor RT15, ​​a sixteenth regulating resistor RT16, a seventeenth regulating resistor RT17, a seventh switching transistor Q7, an eighth switching transistor Q8, a ninth switching transistor Q9, a tenth switching transistor Q10, an eleventh switching transistor Q11, and a twelfth switching transistor Q12.

[0073] The source of the seventh switch Q7 is electrically connected to the first terminal of the eighth regulating resistor RT8, the first terminal of the ninth regulating resistor RT9, the first terminal of the tenth regulating resistor RT10, and the first terminal of the eleventh regulating resistor RT11, and serves as the first terminal of the voltage correction circuit 12; the drain of the seventh switch Q7 is electrically connected to the second terminal of the eighth regulating resistor RT8, the second terminal of the ninth regulating resistor RT9, the second terminal of the tenth regulating resistor RT10, the second terminal of the eleventh regulating resistor RT11, the first terminal of the twelfth regulating resistor RT12, the first terminal of the thirteenth regulating resistor RT13, and the source of the eighth switch Q8.

[0074] The drain of the eighth switch Q8 is electrically connected to the second terminal of the twelfth regulating resistor RT12, the second terminal of the thirteenth regulating resistor RT13, the first terminal of the fourteenth regulating resistor RT14, and the source of the ninth switch Q9.

[0075] The drain of the ninth switch Q9 is electrically connected to the second terminal of the fourteenth regulating resistor RT14, the first terminal of the fifteenth regulating resistor RT15, ​​and the source of the tenth switch Q10. The drain of the tenth switch Q10 is electrically connected to the second terminal of the fifteenth regulating resistor RT15, ​​the first terminal of the sixteenth regulating resistor RT16, and the source of the eleventh switch Q11.

[0076] The drain of the eleventh switch Q11 is electrically connected to the second terminal of the sixteenth regulating resistor RT16, the first terminal of the seventeenth regulating resistor RT17, and the source of the twelfth switch Q12. The drain of the twelfth switch Q12 is electrically connected to the second terminal of the seventeenth regulating resistor RT17, and serves as the second terminal of the voltage correction circuit 12.

[0077] The gate of the seventh switch Q7 is connected to the first voltage adjustment signal V_TRIM. <0> The gate of the eighth switch Q8 is connected to the second voltage adjustment signal V_TRIM. <1> The gate of the ninth switch Q9 is connected to the third voltage adjustment signal V_TRIM. <2> The gate of the tenth switch Q10 is connected to the fourth voltage adjustment signal V_TRIM. <3> The gate of the eleventh switching transistor Q11 is connected to the fifth voltage adjustment signal V_TRIM. <4> The gate of the twelfth switch Q12 is connected to the sixth voltage adjustment signal V_TRIM. <5> .

[0078] Among them, the seventh switch Q7, the eighth switch Q8, the ninth switch Q9, the tenth switch Q10, the eleventh switch Q11, and the twelfth switch Q12 can be any one of the following: gallium nitride transistor, bipolar junction transistor, insulated gate bipolar transistor, metal-oxide-semiconductor field-effect transistor, field-controlled thyristor, gate turn-off thyristor, and transmission gate. Furthermore, the seventh switch Q7, the eighth switch Q8, the ninth switch Q9, the tenth switch Q10, the eleventh switch Q11, and the twelfth switch Q12 are P-type transistors. For example, the seventh switch Q7, the eighth switch Q8, the ninth switch Q9, the tenth switch Q10, the eleventh switch Q11, and the twelfth switch Q12 can all be P-type MOSFETs.

[0079] The voltage regulation signal V_TRIM<5:0> is obtained through the first voltage regulation signal V_TRIM <0> Second voltage regulation signal V_TRIM <1> The third voltage regulation signal V_TRIM <2> Fourth voltage regulation signal V_TRIM <3> Fifth voltage regulation signal V_TRIM <4> And the sixth voltage adjustment signal V_TRIM <5> The signal is a six-bit binary sequence, where "0" represents a low level and "1" represents a high level. In one example, if the voltage adjustment signal V_TRIM<5:0> is 001011, then the first voltage adjustment signal V_TRIM... <0> 1. Second voltage adjustment signal V_TRIM <1> 1. The third voltage regulation signal V_TRIM <2> =0, fourth voltage adjustment signal V_TRIM <3> 1. Fifth voltage regulation signal V_TRIM <4> =0, sixth voltage adjustment signal V_TRIM <5> It is 0.

[0080] By controlling the first voltage regulation signal V_TRIM <0> Second voltage regulation signal V_TRIM <1> The third voltage regulation signal V_TRIM <2> Fourth voltage regulation signal V_TRIM <3> Fifth voltage regulation signal V_TRIM <4> And the sixth voltage adjustment signal V_TRIM <5> The voltage level is set to high or low to control the switching states of the eighth, ninth, tenth, eleventh, eleventh, twelfth, thirteenth, fourteenth, fifteenth, sixteenth, and seventeenth adjusting resistors RT17. By adjusting the series and parallel relationships among these resistors, the resistance value of the voltage correction circuit 12 is adjusted, thereby adjusting the voltage value of the bandgap reference voltage VBG. This makes the 1.2V reference voltage output at the reference voltage output terminal closer to the true 1.2V.

[0081] It should be noted that the number of series or parallel regulating resistors in the voltage correction circuit 12 can be set according to user needs. Similarly, the number of switching transistors can also be set according to user needs. When the number of switching transistors changes, the number of bits in the corresponding voltage regulation signal also needs to change accordingly to control the switching state of each switching transistor through the voltage regulation signal. For example, when the number of switching transistors is 10, the number of bits in the voltage regulation signal is also 10.

[0082] In one possible embodiment, see Figure 3 The voltage divider circuit 13 may include: a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, and a tenth resistor R10.

[0083] The second terminal of the sixth resistor R6 is grounded to AVSS. The first terminal of the sixth resistor R6 is electrically connected to the second terminal of the seventh resistor R7 and serves as the first output terminal P1 of the voltage divider circuit 13, used to output the first voltage V1.

[0084] The first end of the seventh resistor R7 is electrically connected to the second end of the eighth resistor R8, and serves as the second output terminal P2 of the voltage divider circuit 13, used to output the second voltage V2.

[0085] The first end of the eighth resistor R8 is electrically connected to the second end of the ninth resistor R9, and serves as the third output terminal P3 of the voltage divider circuit 13, used to output the third voltage V3.

[0086] The first end of the ninth resistor is electrically connected to the second end of the tenth resistor and serves as the fourth output terminal P4 of the voltage divider circuit, used to output the fourth voltage V4.

[0087] The first terminal of the tenth resistor R10 is electrically connected to the second terminal of the voltage correction circuit 12.

[0088] In one possible embodiment, see Figure 6 , Figure 6 This is a schematic diagram of the circuit structure of a compensation point correction circuit provided in an embodiment of this application, as shown below. Figure 6 As shown, the cryogenic control signal TR_COMP_LT<3:0> may include: the first cryogenic control signal TR_COMP_LT <0> Second cryogenic control signal TR_COMP_LT <1> The third cryogenic control signal TR_COMP_LT <2> and the fourth cryogenic control signal TR_COMP_LT <3> The high-temperature control signal TR_COMP_HT<3:0> may include: the first high-temperature control signal TR_COMP_HT <0> Second high-temperature control signal TR_COMP_HT <1> The third high-temperature control signal TR_COMP_HT <2> And the fourth high-temperature control signal TR_COMP_HT <3> The compensation point correction circuit 14 includes: the thirteenth switch Q13, the fourteenth switch Q14, the fifteenth switch Q15, the sixteenth switch Q16, the seventeenth switch Q17, the eighteenth switch Q18, the nineteenth switch Q19, and the twentieth switch Q20.

[0089] The source of the thirteenth switch Q13 serves as the fourth input terminal T4 of the compensation point correction circuit 14 and is electrically connected to the fourth output terminal P4 of the voltage divider circuit 13 to connect to the fourth voltage V4. The drain of the thirteenth switch Q13 is electrically connected to the drains of the fourteenth switch Q14, the fifteenth switch Q15, and the sixteenth switch Q16 respectively, to output the low-temperature compensation zero-temperature voltage VCONST_LT.

[0090] The source of the fourteenth switch Q14 serves as the third input terminal T3 of the compensation point correction circuit 14 and is electrically connected to the third output terminal P3 of the voltage divider circuit 13 to connect to the third voltage V3; the source of the fifteenth switch Q15 serves as the second input terminal T2 of the compensation point correction circuit 14 and is electrically connected to the second output terminal P2 of the voltage divider circuit 13 to connect to the second voltage V2; the source of the sixteenth switch Q16 serves as the first input terminal T1 of the compensation point correction circuit 14 and is electrically connected to the first output terminal P1 of the voltage divider circuit 13 to connect to the first voltage V1.

[0091] The source of the seventeenth switch Q17 serves as the fourth input terminal T4 of the compensation point correction circuit 14 and is electrically connected to the fourth output terminal P4 of the voltage divider circuit 13 to connect to the fourth voltage V4. The drain of the seventeenth switch Q17 is electrically connected to the drains of the eighteenth switch Q18, the nineteenth switch Q19, and the twentieth switch Q20 respectively, and is used to output the high temperature compensation zero temperature voltage VCONST_HT.

[0092] The source of the eighteenth switch Q18 serves as the third input terminal T3 of the compensation point correction circuit 14 and is electrically connected to the third output terminal P3 of the voltage divider circuit 13 to connect to the third voltage V3; the source of the nineteenth switch Q19 serves as the second input terminal T2 of the compensation point correction circuit 14 and is electrically connected to the second output terminal P2 of the voltage divider circuit 13 to connect to the second voltage V2; the source of the twentieth switch Q20 serves as the first input terminal T1 of the compensation point correction circuit 14 and is electrically connected to the first output terminal P1 of the voltage divider circuit 13 to connect to the first voltage V1.

[0093] The gate of the thirteenth switch Q13 is connected to the first cryogenic control signal TR_COMP_LT. <0> The gate of the fourteenth switch Q14 is connected to the second cryogenic control signal TR_COMP_LT. <1> The gate of the fifteenth switching transistor Q15 is connected to the third cryogenic control signal TR_COMP_LT. <2> The gate of the sixteenth switch Q16 is connected to the fourth cryogenic control signal TR_COMP_LT. <3> The gate of the seventeenth switch Q17 is connected to the first high-temperature control signal TR_COMP_HT. <0> The gate of the eighteenth switching transistor Q18 is connected to the second high-temperature control signal TR_COMP_HT. <1> The gate of the nineteenth switch Q19 is connected to the third high-temperature control signal TR_COMP_HT. <2> The gate of the twentieth switching transistor Q20 is connected to the fourth high-temperature control signal TR_COMP_HT. <3> .

[0094] Among them, the thirteenth switch Q13, the fourteenth switch Q14, the fifteenth switch Q15, the sixteenth switch Q16, the seventeenth switch Q17, the eighteenth switch Q18, the nineteenth switch Q19, and the twentieth switch Q20 can be any one of the following: gallium nitride transistor, bipolar junction transistor, insulated gate bipolar transistor, metal-oxide-semiconductor field-effect transistor, field-controlled thyristor, gate turn-off thyristor, and transmission gate. Furthermore, the thirteenth switch Q13, the fourteenth switch Q14, the fifteenth switch Q15, the sixteenth switch Q16, the seventeenth switch Q17, the eighteenth switch Q18, the nineteenth switch Q19, and the twentieth switch Q20 are N-type transistors. For example, the thirteenth switch Q13, the fourteenth switch Q14, the fifteenth switch Q15, the sixteenth switch Q16, the seventeenth switch Q17, the eighteenth switch Q18, the nineteenth switch Q19, and the twentieth switch Q20 are all N-type MOSFETs.

[0095] The cryogenic control signal TR_COMP_LT<3:0> is obtained through the first cryogenic control signal TR_COMP_LT. <0> Second cryogenic control signal TR_COMP_LT <1> The third cryogenic control signal TR_COMP_LT <2> and the fourth cryogenic control signal TR_COMP_LT <3> This constitutes a 4-bit binary sequence signal, where "0" represents a low level and "1" represents a high level. In one example, if TR_COMP_LT<3:0> is 1011, then the first cryogenic control signal TR_COMP_LT... <0> 1. The second cryogenic control signal TR_COMP_LT <1> 1. The third cryogenic control signal TR_COMP_LT <2> The fourth cryogenic control signal TR_COMP_LT is 0. <3> The value is 1.

[0096] Similarly, the high-temperature control signal TR_COMP_HT<3:0> is obtained through the first high-temperature control signal TR_COMP_HT <0> Second high-temperature control signal TR_COMP_HT <1> The third high-temperature control signal TR_COMP_HT <2> And the fourth high-temperature control signal TR_COMP_HT <3> The signal is a 4-bit binary sequence, where "0" represents a low level and "1" represents a high level. In one example, if TR_COMP_HT<3:0> is 1011, then the first high-temperature control signal TR_COMP_HT... <0> 1. The second high-temperature control signal TR_COMP_HT <1> 1. The third high-temperature control signal TR_COMP_HT <2> The fourth high-temperature control signal TR_COMP_HT is 0. <3> The value is 1.

[0097] The compensation point correction circuit 14 is electrically connected to the first output terminal P1, second output terminal P2, third output terminal P3, and fourth output terminal P4 of the voltage divider circuit 13 through its first input terminal T1, second input terminal T2, third input terminal T3, and fourth output terminal P4, respectively, and is connected to the first voltage V1, second voltage V2, third voltage V3, and fourth voltage V4 respectively. Since the first voltage V1, the second voltage V2, the third voltage V3, and the fourth voltage V4 output by the voltage divider circuit 13 are different voltage values, the switching state of each switching transistor is controlled by the low-temperature control signal TR_COMP_LT<3:0> and the high-temperature control signal TR_COMP_HT<3:0>. The different voltage values ​​of the first voltage V1, the second voltage V2, the third voltage V3, and the fourth voltage V4 are used as the low-temperature compensation zero-temperature voltage VCONST_LT or the high-temperature compensation zero-temperature voltage VCONST_HT. Based on the first voltage V1, the second voltage V2, the third voltage V3, the fourth voltage V4, the low-temperature control signal TR_COMP_LT<3:0>, and the high-temperature control signal TR_COMP_HT<3:0>, the low-temperature compensation zero-temperature voltage VCONST_LT and the high-temperature compensation zero-temperature voltage VCONST_HT are generated, and the adjustment of the low-temperature compensation zero-temperature voltage VCONST_LT and the high-temperature compensation zero-temperature voltage VCONST_HT is realized.

[0098] In one possible embodiment, see Figure 3 The positive temperature coefficient voltage generating circuit 200 includes: an eleventh resistor R11, a twelfth resistor R12, a fourteenth transistor M14, and a fifteenth transistor M15.

[0099] The source of the fourteenth transistor M14 is connected to the power supply voltage VDD. The gate of the fourteenth transistor M14 is electrically connected to the gate of the thirteenth transistor M13. The drain of the fourteenth transistor M14 is electrically connected to the first terminal of the eleventh resistor R11 and the first terminal of the twelfth resistor R12, respectively, and serves as the output terminal of the positive temperature coefficient voltage generating circuit 200, used to output the positive temperature coefficient voltage VHT.

[0100] The second terminal of the eleventh resistor R11 is electrically connected to the second terminal of the twelfth resistor R12 and the drain of the fifteenth transistor M15. The source of the fifteenth transistor M15 is grounded to AVSS, and the gate of the fifteenth transistor M15 is connected to the first enable signal BG_COMP_EN.

[0101] The fourteenth transistor M14 and the fifteenth transistor M15 can be any of the following types: gallium nitride transistor, insulated-gate bipolar transistor, and metal-oxide-semiconductor field-effect transistor. The fourteenth transistor M14 is an N-type transistor. For example, all fourteenth transistors M14 are N-type MOSFETs. The fifteenth transistor M15 is a P-type transistor. For example, all fifteenth transistors M15 are P-type MOSFETs.

[0102] See Figure 3 To make the wiring clearer when drawing the circuit, the same net label indicates that the two corresponding nodes are connected. For example, if the net label of the gate of the fourteenth transistor M14 is LOOP_IN, and the net label of the gate of the thirteenth transistor M13 is also LOOP_IN, then the gate of the fourteenth transistor M14 is electrically connected to the gate of the thirteenth transistor M13.

[0103] When performing high-order compensation, the first enable signal BG_COMP_EN is required to control the fifteenth transistor M15 to turn on, and the positive temperature coefficient voltage VHT is output through the positive temperature coefficient voltage generation circuit 200.

[0104] In one possible embodiment, see Figure 3 The low-temperature compensation point determination circuit 300 includes: the sixteenth transistor M16, the seventeenth transistor M17, the eighteenth transistor M18, the nineteenth transistor M19, the twentieth transistor M20, the twenty-first transistor M21, the twenty-second transistor M22, and the first current source IS1.

[0105] The gate of the 22nd transistor M22 is connected to the second enable signal BG_COMP_ENZ, the source of the 22nd transistor M22 is connected to the power supply voltage VDD, and the drain of the 22nd transistor M22 is electrically connected to the input terminal of the first current source IS1.

[0106] The output terminal of the first current source IS1 is electrically connected to the source of the sixteenth transistor M16 and the source of the seventeenth transistor M17, respectively. The drain of the sixteenth transistor M16 is electrically connected to the drain of the eighteenth transistor M18 and the gate of the eighteenth transistor M18, respectively. The source of the eighteenth transistor M18 is electrically connected to the drain of the twentieth transistor M20 and the gate of the twentieth transistor M20, respectively.

[0107] The drain of the seventeenth transistor M17 is electrically connected to the drain and gate of the nineteenth transistor M19, respectively. The source of the nineteenth transistor M19 is electrically connected to the drain and gate of the twenty-first transistor M21, respectively.

[0108] The gate of the sixteenth transistor M16 is connected to the low-temperature compensation zero-temperature voltage VCONST_LT, the gate of the seventeenth transistor M17 is connected to the negative temperature coefficient voltage VLT, the source of the twentieth transistor M20 is grounded to AVSS, and the source of the twenty-first transistor M21 is grounded to AVSS.

[0109] Transistors M16 (16th), M17 (17th), M18 (18th), M19 (19th), M20 (20th), M21 (21st), and M22 (22nd) can be any of the following types: gallium nitride transistors, insulated-gate bipolar transistors (IGBTs), and metal-oxide-semiconductor field-effect transistors (MOSFETs). Transistors M18, M19, M20, and M21 are N-type transistors. For example, they can all be N-type MOSFETs. Transistors M16, M17, and M22 are P-type transistors. For example, they can all be P-type MOSFETs.

[0110] The low-temperature compensation point determination circuit 300 determines the low-temperature compensation starting temperature based on the low-temperature compensation zero-temperature voltage VCONST_LT connected to the gate of the sixteenth transistor M16 and the negative temperature coefficient voltage VLT connected to the gate of the seventeenth transistor M17.

[0111] In one possible embodiment, see Figure 3 The high temperature compensation point determination circuit 400 includes: the twenty-third transistor M23, the twenty-fourth transistor M24, the twenty-fifth transistor M25, the twenty-sixth transistor M26, the twenty-seventh transistor M27, the twenty-eighth transistor M28, the twenty-ninth transistor M29, and the second current source IS2.

[0112] The gate of the twenty-ninth transistor M29 is connected to the second enable signal BG_COMP_ENZ, the source of the twenty-ninth transistor M29 is connected to the power supply voltage VDD, and the drain of the twenty-ninth transistor M29 is electrically connected to the input terminal of the second current source IS2.

[0113] The output terminal of the second current source IS2 is electrically connected to the source of the twenty-third transistor M23 and the source of the twenty-fourth transistor M24, respectively. The drain of the twenty-fourth transistor M24 is electrically connected to the drain of the twenty-fifth transistor M25 and the gate of the twenty-fifth transistor M25, respectively. The source of the twenty-fifth transistor M25 is electrically connected to the drain of the twenty-seventh transistor M27 and the gate of the twenty-seventh transistor M27, respectively.

[0114] The drain of the twenty-third transistor M23 is electrically connected to the drain and gate of the twenty-sixth transistor M26, respectively. The source of the twenty-sixth transistor M26 is electrically connected to the drain and gate of the twenty-eighth transistor M28, respectively.

[0115] The gate of the twenty-third transistor M23 is connected to a positive temperature coefficient voltage VHT, the gate of the twenty-fourth transistor M24 is connected to a high temperature compensation zero temperature voltage VCONST_HT, the source of the twenty-seventh transistor M27 is grounded to AVSS, and the source of the twenty-eighth transistor M28 is grounded to AVSS.

[0116] Transistors M23 (23), M24 (24), M25 (25), M26 (26), M27 (27), M28 (28), and M29 (29) can be any of the following types: gallium nitride transistors, insulated-gate bipolar transistors (IGBTs), and metal-oxide-semiconductor field-effect transistors (MOSFETs). Transistors M25, M26, M27, and M28 are N-type transistors. For example, all of them are N-type MOSFETs. Transistors M23, M24, and M29 are P-type transistors. For example, all of them are P-type MOSFETs.

[0117] The high temperature compensation point determination circuit 400 determines the high temperature compensation starting temperature based on the high temperature compensation zero temperature voltage VCONST_HT connected to the gate of the twenty-fourth transistor M24 and the positive temperature coefficient voltage VHT connected to the gate of the twenty-third transistor M23.

[0118] In one possible embodiment, see Figure 3 The low-temperature compensation circuit 500 includes: the thirtieth transistor M30, the thirty-first transistor M31, the thirty-second transistor M32, the thirty-third transistor M33, and the third current source IS3; the thirtieth transistor M30 is a Native NMOS transistor.

[0119] The gate of the 30th transistor M30 is connected to the bandgap reference voltage VBG, the drain of the 30th transistor M30 is connected to the power supply voltage VDD, the source of the 30th transistor M30 is electrically connected to the drain of the 31st transistor M31, the gate of the 31st transistor M31 is electrically connected to the gate of the 19th transistor M19, the gate of the 32nd transistor M32 is electrically connected to the gate of the 18th transistor M18, and the drain of the 32nd transistor M32 is electrically connected to the second terminal of the fifth resistor R5.

[0120] The source of the thirty-first transistor M31 is electrically connected to the source of the thirty-second transistor M32 and the input of the third current source IS3. The output of the third current source IS3 is electrically connected to the drain of the thirty-third transistor M33. The gate of the thirty-third transistor M33 is connected to the first enable signal BG_COMP_EN. The source of the thirty-third transistor M33 is grounded to AVSS.

[0121] See Figure 3 To make the wiring clearer when drawing the circuit, the same net label indicates that the two corresponding nodes are connected. For example, if the net label of the gate of the eighteenth transistor M18 is VON_LT, and the net label of the gate of the thirty-second transistor M32 is also VON_LT, then the gate of the eighteenth transistor M18 is electrically connected to the gate of the thirty-second transistor M32. If the net label of the gate of the nineteenth transistor M19 is VOP_LT, and the net label of the gate of the thirty-first transistor M31 is also VOP_LT, then the gate of the nineteenth transistor M19 is electrically connected to the gate of the thirty-first transistor M31. If the net label of the drain of the thirty-second transistor M32 is VCOMP, and the net label of the second terminal of the fifth resistor R5 is also VCOMP, then the drain of the thirty-second transistor M32 is electrically connected to the second terminal of the fifth resistor R5.

[0122] Transistors M31 (31), M32 (32), and M33 (33) can be of any type: gallium nitride transistor, insulated-gate bipolar transistor, or metal-oxide-semiconductor field-effect transistor. Furthermore, transistors M31, M32, and M33 are N-type transistors. For example, transistors M31, M32, and M33 can all be N-type MOSFETs.

[0123] The first enable signal BG_COMP_EN and the second enable signal BG_COMP_ENZ are mutually exclusive signals. When the first enable signal BG_COMP_EN is high, the second enable signal BG_COMP_ENZ is low; when the first enable signal BG_COMP_EN is low, the second enable signal BG_COMP_ENZ is high.

[0124] Temperature compensation in the low-temperature range is achieved through the low-temperature compensation point determination circuit 300 and the low-temperature compensation circuit 500. Since the thirty-third transistor M33 is an N-type MOS transistor and the twenty-second transistor M22 is a P-type MOS transistor, both the low-temperature compensation point determination circuit 300 and the low-temperature compensation circuit 500 are turned on when the first enable signal BG_COMP_EN is high and the second enable signal BG_COMP_ENZ is low. After the low-temperature compensation point determination circuit 300 determines the low-temperature compensation start temperature, when the current temperature is lower than the low-temperature compensation start temperature, the bandgap reference voltage VBG is compensated for low temperature through the low-temperature compensation circuit 500.

[0125] In one possible embodiment, see Figure 3 The high-temperature compensation circuit 600 includes: the thirty-fourth transistor M34, the thirty-fifth transistor M35, the thirty-sixth transistor M36, the thirty-seventh transistor M37, and the fourth current source IS4; the thirty-fourth transistor M34 is a Native NMOS transistor.

[0126] The gate of the thirty-fourth transistor M34 is connected to the bandgap reference voltage VBG, the drain of the thirty-fourth transistor M34 is connected to the power supply voltage VDD, the source of the thirty-fourth transistor M34 is electrically connected to the drain of the thirty-fifth transistor M35, the gate of the thirty-fifth transistor M35 is electrically connected to the gate of the twenty-fifth transistor M25, the gate of the thirty-seventh transistor M37 is electrically connected to the gate of the twenty-sixth transistor M26, and the drain of the thirty-seventh transistor M37 is electrically connected to the second terminal of the fifth resistor R5.

[0127] The source of the thirty-fifth transistor M35 is electrically connected to the source of the thirty-seventh transistor M37 and the input of the fourth current source IS4. The output of the fourth current source IS4 is electrically connected to the drain of the thirty-sixth transistor M36. The gate of the thirty-sixth transistor M36 is connected to the first enable signal BG_COMP_EN. The source of the thirty-sixth transistor M36 is grounded to AVSS.

[0128] See Figure 3To make the wiring clearer when drawing the circuit, the same net label indicates that the two corresponding nodes are connected. For example, if the net label of the gate of the 25th transistor M25 is VON_HT, and the net label of the gate of the 35th transistor M35 is also VON_HT, then the gates of the 25th transistor M25 and the 35th transistor M35 are electrically connected. Similarly, if the net label of the gate of the 26th transistor M26 is VOP_HT, and the net label of the gate of the 37th transistor M37 is also VOP_HT, then the gates of the 26th transistor M26 and the 37th transistor M37 are electrically connected. Finally, if the net label of the drain of the 37th transistor M37 is VCOMP, and the net label of the second terminal of the fifth resistor R5 is also VCOMP, then the drain of the 37th transistor M37 is electrically connected to the second terminal of the fifth resistor R5.

[0129] Transistors M35 (35), M36 (36), and M37 (37) can be any of the following types: gallium nitride transistor, insulated-gate bipolar transistor, or metal-oxide-semiconductor field-effect transistor. Furthermore, transistors M35, M36, and M37 are N-type transistors. For example, transistors M35, M36, and M37 can all be N-type MOSFETs.

[0130] Temperature compensation in the high-temperature range is achieved through the high-temperature compensation point determination circuit 400 and the high-temperature compensation circuit 600. Since the thirty-sixth transistor M36 is an N-type MOS transistor and the twenty-ninth transistor M29 is a P-type MOS transistor, both the high-temperature compensation point determination circuit 400 and the high-temperature compensation circuit 600 are turned on when the first enable signal BG_COMP_EN is high and the second enable signal BG_COMP_ENZ is low. After the high-temperature compensation point determination circuit 400 determines the high-temperature compensation start temperature, when the current temperature is higher than the high-temperature compensation start temperature, the high-temperature compensation circuit 600 performs high-temperature compensation on the bandgap reference voltage VBG.

[0131] In view of the bandgap reference voltage source circuit provided in the above embodiments, this application also provides a bandgap reference voltage source calibration method, the method comprising: S1. After fabrication, for each trimming code value, the bandgap reference voltage corresponding to the trimming code value is detected, and the temperature curve of the bandgap reference voltage is obtained. The trimming code value is a positive integer greater than or equal to zero, and the correction adjustment signal is the signal obtained after binary conversion of the trimming code value.

[0132] After fabrication, the chip containing the bandgap reference voltage source circuit 1000 is set to first-order temperature compensation mode. The adjustment code value 'code' is a positive integer greater than or equal to zero, and the value of the adjustment code value 'code' can be 0, 1, 2, 3, 4, etc. The adjustment code value is a decimal number, and the correction adjustment signal is the signal obtained by converting the adjustment code value into binary.

[0133] For example, see Figure 3 and Figure 4 The correction adjustment signal TC_TRIM<5:0> is obtained through the first correction adjustment signal TC_TRIM <0> Second correction adjustment signal TC_TRIM <1> The third correction adjustment signal TC_TRIM <2> Fourth correction adjustment signal TC_TRIM <3> Fifth correction adjustment signal TC_TRIM <4> And the sixth correction adjustment signal TC_TRIM <5> This constitutes a six-bit binary sequence signal. The correction adjustment signal TC_TRIM<5:0> can then represent the adjustment code value code from 0 to 63. When the adjustment code value code is 2, the correction adjustment signal TC_TRIM<5:0> is 000010. At this time, the first correction adjustment signal TC_TRIM... <0> The second correction adjustment signal TC_TRIM is 0. <1> 1. The third correction adjustment signal TC_TRIM <2> 0, fourth correction adjustment signal TC_TRIM <3> The fifth correction adjustment signal TC_TRIM is 0. <4> =0, sixth correction adjustment signal TC_TRIM <5> It is 0.

[0134] The first correction adjustment signal TC_TRIM <0> The second correction adjustment signal TC_TRIM is 0. <1> 1. The third correction adjustment signal TC_TRIM <2> 0, fourth correction adjustment signal TC_TRIM <3> The fifth correction adjustment signal TC_TRIM is 0. <4> =0, sixth correction adjustment signal TC_TRIM <5> The value is 0, which controls the switching states of the first switch Q1, the second switch Q2, the third switch Q3, the fourth switch Q4, the fifth switch Q5, and the sixth switch Q6. By adjusting the series and parallel relationship between the first regulating resistor RT1, the second regulating resistor RT2, the third regulating resistor RT3, the fourth regulating resistor RT4, the fifth regulating resistor RT5, the sixth regulating resistor RT6, and the seventh regulating resistor RT7, the resistance value of the first-order temperature coefficient correction circuit 11 is adjusted, thereby obtaining the bandgap reference voltage VBG corresponding to the adjustment code value.

[0135] Then, adjust the temperature and obtain the temperature curve of the bandgap reference voltage VBG. For example, in the temperature range of -40℃ to 85℃, obtain the voltage value of the bandgap reference voltage VBG to obtain the temperature curve.

[0136] For each trimming code value, the bandgap reference voltage corresponding to the trimming code value is detected, and the temperature curve of the bandgap reference voltage is obtained. For multiple different values ​​of the trimming code value, multiple temperature curves can be obtained.

[0137] S2, for each temperature curve, determine the extreme temperature of the temperature curve.

[0138] Temperature curves are generally convex parabolas. For each temperature curve, the extreme temperature T1 of that temperature curve is determined. The extreme temperature T1 is the extreme value of the convex parabola.

[0139] S3. For each temperature curve, with the extreme temperature as the center, record the voltage corresponding to the same preset step size temperature on the left and right sides to obtain the first deviation voltage and the second deviation voltage.

[0140] Centered on the extreme temperature T1, record the voltages corresponding to the same preset step temperature ΔT on both the left and right sides to obtain the first deviation voltage VBG(T1+ΔT) and the second deviation voltage VBG(T1-ΔT). The preset step temperature ΔT can be set by the user according to their needs.

[0141] For example, when the extreme temperature T1 is 25℃ and the preset step temperature ΔT is 5℃, the bandgap reference voltage VBG corresponding to 20℃ in the temperature curve is detected to obtain the second deviation voltage VBG(T1-ΔT); the bandgap reference voltage VBG corresponding to 30℃ in the temperature curve is detected to obtain the first deviation voltage VBG(T1+ΔT).

[0142] S4, calculate the absolute value of the difference between the first deviation voltage and the second deviation voltage to obtain multiple deviation voltages.

[0143] For a given temperature curve, calculate the absolute value of the difference between the first deviation voltage VBG(T1+ΔT) and the second deviation voltage VBG(T1-ΔT) to obtain a deviation voltage ΔV. Then, ΔV = |VBG(T1+ΔT) - VBG(T1-ΔT)|. For multiple temperature curves, multiple deviation voltages can be obtained.

[0144] S5. Find the minimum value among multiple deviation voltages, take the adjustment code value corresponding to the minimum value among multiple deviation voltages as the target adjustment code value, and burn the target adjustment code value into the chip where the bandgap reference voltage source circuit is located.

[0145] Find the minimum value among multiple deviation voltages and use the adjustment code value corresponding to the minimum value among multiple deviation voltages as the target adjustment code value. For example, the adjustment code value code takes the range of 0 to 63. For each adjustment code value, detect the temperature curve corresponding to the adjustment code value to obtain 64 temperature curves and 64 deviation voltages. Among them, the adjustment code value corresponding to the minimum value of the deviation voltage is 2. Then, 2 is used as the target adjustment code value and the target adjustment code value is burned into the chip where the bandgap reference voltage source circuit is located.

[0146] The process of determining the target adjustment code value described above is to determine the bandgap reference voltage VBG with the minimum temperature drift by adjusting the adjustment code value.

[0147] S6, at room temperature, detects the absolute value of the bandgap reference voltage.

[0148] After determining the target correction code value, the absolute value of the bandgap reference voltage VBG needs to be detected at room temperature (e.g., 25°C).

[0149] S7: When the absolute value of the bandgap reference voltage is greater than or equal to 1.246V, the target adjustment code value is subtracted from the preset code value to determine the final adjustment code value.

[0150] When the absolute value of the bandgap reference voltage VBG is greater than or equal to 1.246V, the target adjustment code value is subtracted from the preset code value to determine the final adjustment code value. The preset code value can be set by the user according to their needs.

[0151] For example, if the target adjustment code value is 10 and the preset code value is 5, when the absolute value of the bandgap reference voltage VBG is greater than or equal to 1.246V, the target adjustment code value is subtracted from the preset code value, i.e., 10-5=5. At this time, the final adjustment code value is 5.

[0152] S8, when the absolute value of the bandgap reference voltage is less than or equal to 1.21V, adds the preset code value to the target adjustment code value and determines it as the final adjustment code value.

[0153] For example, if the target adjustment code value is 10 and the preset code value is 5, when the absolute value of the bandgap reference voltage VBG is less than or equal to 1.21V, the target adjustment code value is added to the preset code value, i.e., 10+5=15. At this time, the final adjustment code value is 15.

[0154] S9 performs high-temperature or low-temperature compensation on the bandgap reference voltage after the final adjustment code value is determined.

[0155] After the final adjustment code value is determined, the first-order compensation of the bandgap reference voltage source circuit 1000 is completed. Then, by controlling the first enable signal BG_COMP_EN and the second enable signal BG_COMP_ENZ, higher-order compensation is enabled. Through the low-temperature compensation point judgment circuit 300, the high-temperature compensation point judgment circuit 400, the low-temperature compensation circuit 500, and the high-temperature compensation circuit 600, high-temperature compensation or low-temperature compensation is achieved for the bandgap reference voltage VBG.

[0156] The bandgap reference voltage source calibration method provided in this application is a single-point calibration method, that is, calibration of the bandgap reference voltage VBG based on the extreme temperature T1.

[0157] See Figure 3 This application provides a bandgap reference voltage source circuit and calibration method. When the current temperature is higher than the high-temperature compensation starting temperature, the 37th transistor M37 is turned on; when the current temperature is between the high-temperature compensation starting temperature and the low-temperature compensation starting temperature, both the 32nd transistor M32 and the 37th transistor M37 are turned off; when the current temperature is lower than the low-temperature compensation starting temperature, the 32nd transistor M32 is turned on. This achieves high-temperature and low-temperature compensation for the bandgap reference voltage VBG. The low-temperature compensation zero-temperature voltage VCONST_LT and the high-temperature compensation zero-temperature voltage VCONST_HT are adjusted through the compensation point correction circuit 14 and the voltage divider circuit 13 to adjust the low-temperature compensation starting temperature and the high-temperature compensation starting temperature.

[0158] When the high-temperature compensation zero-temperature voltage VCONST_HT is increased, the corresponding high-temperature compensation starting temperature rises synchronously, and the compensation current begins to flow at a higher temperature. Conversely, when the high-temperature compensation zero-temperature voltage VCONST_HT is decreased, the corresponding high-temperature compensation starting temperature decreases synchronously, and the compensation current begins to flow at a lower temperature. Similarly, when the low-temperature compensation zero-temperature voltage VCONST_LT is increased, the corresponding low-temperature compensation starting temperature decreases, and the compensation current begins to flow at a lower temperature; conversely, when the low-temperature compensation zero-temperature voltage VCONST_LT is decreased, the corresponding high-temperature compensation starting temperature rises, and the compensation current begins to flow at a higher temperature. After the compensation current begins to flow, the current magnitude exhibits a linear relationship with the temperature change, and the current gradually increases until it reaches the maximum compensation current.

[0159] Due to process angles and mismatches after chip fabrication, the bandgap reference voltage VBG of the chip varies. The first-order temperature coefficient correction circuit 11 (TC TRIM) performs first-order compensation on the bandgap reference voltage VBG. When the absolute value of the bandgap reference voltage VBG at room temperature is greater than or equal to 1.246V or less than or equal to 1.21V, the target trimming code value is adjusted again to determine the final trimming code value.

[0160] Compared with related technologies, the bandgap reference voltage source circuit provided in this application does not introduce additional CTAT and PTAT current generation circuits, resulting in fewer components, reduced area consumption, and lower cost. Without introducing additional CTAT and PTAT current generation circuits, a single-point calibration method is used to perform first-order compensation on the bandgap reference voltage VBG. Then, based on whether the absolute value of the bandgap reference voltage VBG at room temperature is greater than or equal to 1.246V or less than or equal to 1.21V, it is determined whether to readjust the target trimming code value. This achieves an effect similar to two-point calibration, reducing the impact of process corners and mismatches. While reducing the area consumed by the bandgap reference voltage source and lowering the cost, higher accuracy is achieved through single-point calibration.

[0161] This application also provides a chip, which includes: the bandgap reference voltage source circuit as described above.

[0162] This chip can be used as a digital-to-analog converter, an analog-to-digital converter, and a linear regulator.

[0163] This application also provides an electronic device, including: the chip as described above.

[0164] Electronic devices may include, but are not limited to: adapters, chargers, tablets, smart home devices, vehicles, and wearable devices.

[0165] Finally, it should be noted that the above embodiments are merely specific implementations of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A bandgap reference voltage source circuit, characterized in that, The bandgap reference voltage source circuit includes: a bandgap reference core circuit, a positive temperature coefficient voltage generation circuit, a low temperature compensation point determination circuit, a high temperature compensation point determination circuit, a low temperature compensation circuit, and a high temperature compensation circuit. The bandgap reference core circuit is electrically connected to the positive temperature coefficient voltage generating circuit, the low temperature compensation point judgment circuit, the high temperature compensation point judgment circuit, the low temperature compensation circuit, and the high temperature compensation circuit, respectively; the positive temperature coefficient voltage generating circuit is electrically connected to the high temperature compensation point judgment circuit, the low temperature compensation point judgment circuit is electrically connected to the low temperature compensation circuit, and the high temperature compensation point judgment circuit is electrically connected to the high temperature compensation circuit. The bandgap reference core circuit is used to generate a bandgap reference voltage, a low-temperature compensated zero-temperature voltage, a high-temperature compensated zero-temperature voltage, and output a negative temperature coefficient voltage. The positive temperature coefficient voltage generating circuit is used to generate a positive temperature coefficient voltage; The low-temperature compensation point determination circuit is used to determine the low-temperature compensation starting temperature based on the low-temperature compensation zero-temperature voltage and the negative temperature coefficient voltage. The high-temperature compensation point determination circuit is used to determine the high-temperature compensation starting temperature based on the high-temperature compensation zero-temperature voltage and the positive temperature coefficient voltage. The low-temperature compensation circuit is used to perform low-temperature compensation on the bandgap reference voltage when the current temperature is lower than the low-temperature compensation start temperature. The high-temperature compensation circuit is used to perform high-temperature compensation on the bandgap reference voltage when the current temperature is higher than the high-temperature compensation start temperature.

2. The bandgap reference voltage source circuit according to claim 1, characterized in that, The core circuit of the bandgap reference includes: a reference generation circuit, a first-order temperature coefficient correction circuit, a voltage correction circuit, a voltage divider circuit, and a compensation point correction circuit. The reference generation circuit is electrically connected to the first-order temperature coefficient correction circuit and the voltage correction circuit, respectively. The voltage correction circuit is electrically connected to the voltage divider circuit, and the voltage divider circuit is electrically connected to the compensation point correction circuit. The reference generation circuit is used to generate the bandgap reference voltage and output the negative temperature coefficient voltage. The first-order temperature coefficient correction circuit is used to adjust its own resistance value according to the correction adjustment signal in order to adjust the temperature drift of the bandgap reference voltage. The voltage correction circuit is used to adjust its own resistance value according to the voltage adjustment signal in order to adjust the voltage value of the bandgap reference voltage. The voltage divider circuit is used to generate a first voltage, a second voltage, a third voltage, and a fourth voltage; The compensation point correction circuit is used to generate the low-temperature compensation zero-temperature voltage and the high-temperature compensation zero-temperature voltage based on the first voltage, the second voltage, the third voltage, the fourth voltage, the low-temperature control signal, and the high-temperature control signal.

3. The bandgap reference voltage source circuit according to claim 2, characterized in that, The reference generation circuit includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a first transistor, a second transistor, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, and a thirteenth transistor; The first end of the first resistor is electrically connected to the first end of the second resistor and the second end of the fourth resistor, respectively. The second end of the first resistor is electrically connected to the emitter of the first transistor and the gate of the third transistor, respectively, and serves as the first output terminal of the reference generation circuit for outputting the negative temperature coefficient voltage. The second end of the second resistor is electrically connected to the first end of the third resistor, the second end of the third resistor is electrically connected to the emitter of the second transistor and the gate of the fourth transistor, and the base of the first transistor is electrically connected to the base of the second transistor. The drain of the third transistor is electrically connected to the drain of the fifth transistor and the source of the seventh transistor, respectively. The source of the third transistor is electrically connected to the source of the fourth transistor, the drain of the first transistor, and the drain of the second transistor, respectively. The drain of the fourth transistor is electrically connected to the drain of the sixth transistor and the source of the eighth transistor, respectively. The gate of the first transistor is electrically connected to the gate of the second transistor, the gate of the eleventh transistor, and the gate of the twelfth transistor, respectively. The source of the fifth transistor is electrically connected to the source of the sixth transistor and the source of the thirteenth transistor, respectively, for connecting to the power supply voltage. The gate of the fifth transistor is electrically connected to the gate of the sixth transistor, the drain of the eighth transistor, and the drain of the tenth transistor, respectively. The gate of the seventh transistor is electrically connected to the gate of the eighth transistor. The drain of the seventh transistor is electrically connected to the gate of the thirteenth transistor and the drain of the ninth transistor, respectively. The gate of the ninth transistor is electrically connected to the gate of the tenth transistor. The source of the ninth transistor is electrically connected to the drain of the eleventh transistor. The source of the tenth transistor is electrically connected to the drain of the twelfth transistor. The drain of the thirteenth transistor is electrically connected to the first terminal of the fifth resistor and the first terminal of the voltage correction circuit, and serves as the second output terminal of the reference generation circuit for outputting the bandgap reference voltage; the second terminal of the fifth resistor is electrically connected to the first terminal of the first-order temperature coefficient correction circuit, and the second terminal of the first-order temperature coefficient correction circuit is electrically connected to the first terminal of the fourth resistor. The collectors of the first transistor, the second transistor, the source of the first transistor, the source of the second transistor, the source of the eleventh transistor, and the source of the twelfth transistor are all grounded.

4. The bandgap reference voltage source circuit according to claim 2, characterized in that, The correction adjustment signals include: a first correction adjustment signal, a second correction adjustment signal, a third correction adjustment signal, a fourth correction adjustment signal, a fifth correction adjustment signal, and a sixth correction adjustment signal; the first-order temperature coefficient correction circuit includes: a first adjustment resistor, a second adjustment resistor, a third adjustment resistor, a fourth adjustment resistor, a fifth adjustment resistor, a sixth adjustment resistor, a seventh adjustment resistor, a first switching transistor, a second switching transistor, a third switching transistor, a fourth switching transistor, a fifth switching transistor, and a sixth switching transistor; The first end of the first regulating resistor is electrically connected to the first end of the second regulating resistor and the source of the first switching transistor, and serves as the first end of the first-order temperature coefficient correction circuit; the second end of the first regulating resistor is electrically connected to the second end of the second regulating resistor, the first end of the third regulating resistor, the drain of the first switching transistor, and the source of the second switching transistor. The drain of the second switching transistor is electrically connected to the second terminal of the third adjusting resistor, the first terminal of the fourth adjusting resistor, and the source of the third switching transistor, respectively. The drain of the third switching transistor is electrically connected to the second terminal of the fourth adjusting resistor, the first terminal of the fifth adjusting resistor, and the source of the fourth switching transistor, respectively. The drain of the fourth switching transistor is electrically connected to the second terminal of the fifth adjusting resistor, the first terminal of the sixth adjusting resistor, and the source of the fifth switching transistor, respectively. The drain of the fifth switching transistor is electrically connected to the second terminal of the sixth adjusting resistor, the first terminal of the seventh adjusting resistor, and the source of the sixth switching transistor, respectively. The drain of the sixth switching transistor is electrically connected to the second terminal of the seventh adjusting resistor, and serves as the second terminal of the first-order temperature coefficient correction circuit. The gate of the first switch is connected to the first correction adjustment signal, the gate of the second switch is connected to the second correction adjustment signal, the gate of the third switch is connected to the third correction adjustment signal, the gate of the fourth switch is connected to the fourth correction adjustment signal, the gate of the fifth switch is connected to the fifth correction adjustment signal, and the gate of the sixth switch is connected to the sixth correction adjustment signal.

5. The bandgap reference voltage source circuit according to claim 2, characterized in that, The voltage adjustment signals include: a first voltage adjustment signal, a second voltage adjustment signal, a third voltage adjustment signal, a fourth voltage adjustment signal, a fifth voltage adjustment signal, and a sixth voltage adjustment signal; the voltage correction circuit includes: an eighth adjustment resistor, a ninth adjustment resistor, a tenth adjustment resistor, an eleventh adjustment resistor, a twelfth adjustment resistor, a thirteenth adjustment resistor, a fourteenth adjustment resistor, a fifteenth adjustment resistor, a sixteenth adjustment resistor, a seventeenth adjustment resistor, a seventh switch, an eighth switch, a ninth switch, a tenth switch, an eleventh switch, and a twelfth switch; The source of the seventh switching transistor is electrically connected to the first terminals of the eighth, ninth, tenth, and eleventh adjusting resistors, respectively, and serves as the first terminal of the voltage correction circuit; the drain of the seventh switching transistor is electrically connected to the second terminals of the eighth, ninth, tenth, eleventh, twelfth, and thirteenth adjusting resistors, respectively, and the source of the eighth switching transistor. The drain of the eighth switching transistor is electrically connected to the second terminal of the twelfth regulating resistor, the second terminal of the thirteenth regulating resistor, the first terminal of the fourteenth regulating resistor, and the source of the ninth switching transistor, respectively. The drain of the ninth switching transistor is electrically connected to the second terminal of the fourteenth adjusting resistor, the first terminal of the fifteenth adjusting resistor, and the source of the tenth switching transistor, respectively. The drain of the tenth switching transistor is electrically connected to the second terminal of the fifteenth adjusting resistor, the first terminal of the sixteenth adjusting resistor, and the source of the eleventh switching transistor, respectively. The drain of the eleventh switching transistor is electrically connected to the second terminal of the sixteenth adjusting resistor, the first terminal of the seventeenth adjusting resistor, and the source of the twelfth switching transistor. The drain of the twelfth switching transistor is electrically connected to the second terminal of the seventeenth adjusting resistor and serves as the second terminal of the voltage correction circuit. The gate of the seventh switch is connected to the first voltage adjustment signal, the gate of the eighth switch is connected to the second voltage adjustment signal, the gate of the ninth switch is connected to the third voltage adjustment signal, the gate of the tenth switch is connected to the fourth voltage adjustment signal, the gate of the eleventh switch is connected to the fifth voltage adjustment signal, and the gate of the twelfth switch is connected to the sixth voltage adjustment signal.

6. The bandgap reference voltage source circuit according to claim 2, characterized in that, The voltage divider circuit includes: a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, and a tenth resistor; The second terminal of the sixth resistor is grounded, and the first terminal of the sixth resistor is electrically connected to the second terminal of the seventh resistor, serving as the first output terminal of the voltage divider circuit for outputting the first voltage. The first end of the seventh resistor is electrically connected to the second end of the eighth resistor, and serves as the second output terminal of the voltage divider circuit for outputting the second voltage; The first end of the eighth resistor is electrically connected to the second end of the ninth resistor, and serves as the third output terminal of the voltage divider circuit for outputting the third voltage; The first end of the ninth resistor is electrically connected to the second end of the tenth resistor and serves as the fourth output terminal of the voltage divider circuit for outputting the fourth voltage. The first terminal of the tenth resistor is electrically connected to the second terminal of the voltage correction circuit.

7. The bandgap reference voltage source circuit according to claim 6, characterized in that, The low-temperature control signal includes: a first low-temperature control signal, a second low-temperature control signal, a third low-temperature control signal, and a fourth low-temperature control signal; the high-temperature control signal includes: a first high-temperature control signal, a second high-temperature control signal, a third high-temperature control signal, and a fourth high-temperature control signal; the compensation point correction circuit includes: a thirteenth switch, a fourteenth switch, a fifteenth switch, a sixteenth switch, a seventeenth switch, an eighteenth switch, a nineteenth switch, and a twentieth switch; The source of the thirteenth switch is used as the fourth input terminal of the compensation point correction circuit and is electrically connected to the fourth output terminal of the voltage divider circuit to receive the fourth voltage. The drain of the thirteenth switch is electrically connected to the drain of the fourteenth switch, the drain of the fifteenth switch, and the drain of the sixteenth switch to output the low temperature compensation zero temperature voltage. The source of the fourteenth switch serves as the third input terminal of the compensation point correction circuit and is electrically connected to the third output terminal of the voltage divider circuit to receive the third voltage; the source of the fifteenth switch serves as the second input terminal of the compensation point correction circuit and is electrically connected to the second output terminal of the voltage divider circuit to receive the second voltage; the source of the sixteenth switch serves as the first input terminal of the compensation point correction circuit and is electrically connected to the first output terminal of the voltage divider circuit to receive the first voltage. The source of the seventeenth switch is used as the fourth input terminal of the compensation point correction circuit and is electrically connected to the fourth output terminal of the voltage divider circuit to receive the fourth voltage. The drain of the seventeenth switch is electrically connected to the drain of the eighteenth switch, the drain of the nineteenth switch, and the drain of the twentieth switch to output the high temperature compensation zero temperature voltage. The source of the eighteenth switch serves as the third input terminal of the compensation point correction circuit and is electrically connected to the third output terminal of the voltage divider circuit to receive the third voltage; the source of the nineteenth switch serves as the second input terminal of the compensation point correction circuit and is electrically connected to the second output terminal of the voltage divider circuit to receive the second voltage; the source of the twentieth switch serves as the first input terminal of the compensation point correction circuit and is electrically connected to the first output terminal of the voltage divider circuit to receive the first voltage. The gate of the thirteenth switch is connected to the first low-temperature control signal, the gate of the fourteenth switch is connected to the second low-temperature control signal, the gate of the fifteenth switch is connected to the third low-temperature control signal, and the gate of the sixteenth switch is connected to the fourth low-temperature control signal; the gate of the seventeenth switch is connected to the first high-temperature control signal, the gate of the eighteenth switch is connected to the second high-temperature control signal, the gate of the nineteenth switch is connected to the third high-temperature control signal, and the gate of the twentieth switch is connected to the fourth high-temperature control signal.

8. The bandgap reference voltage source circuit according to claim 3, characterized in that, The positive temperature coefficient voltage generating circuit includes: an eleventh resistor, a twelfth resistor, a fourteenth transistor, and a fifteenth transistor; The source of the fourteenth transistor is connected to the power supply voltage, the gate of the fourteenth transistor is electrically connected to the gate of the thirteenth transistor, and the drain of the fourteenth transistor is electrically connected to the first terminal of the eleventh resistor and the first terminal of the twelfth resistor, respectively, and serves as the output terminal of the positive temperature coefficient voltage generating circuit for outputting the positive temperature coefficient voltage. The second end of the eleventh resistor is electrically connected to the second end of the twelfth resistor and the drain of the fifteenth transistor, the source of the fifteenth transistor is grounded, and the gate of the fifteenth transistor is connected to the first enable signal.

9. The bandgap reference voltage source circuit according to claim 8, characterized in that, The low-temperature compensation point determination circuit includes: the sixteenth transistor, the seventeenth transistor, the eighteenth transistor, the nineteenth transistor, the twentieth transistor, the twenty-first transistor, the twenty-second transistor, and a first current source; The gate of the 22nd transistor is connected to a second enable signal, the source of the 22nd transistor is connected to the power supply voltage, and the drain of the 22nd transistor is electrically connected to the input terminal of the first current source. The output terminal of the first current source is electrically connected to the source of the sixteenth transistor and the source of the seventeenth transistor, respectively. The drain of the sixteenth transistor is electrically connected to the drain of the eighteenth transistor and the gate of the eighteenth transistor, respectively. The source of the eighteenth transistor is electrically connected to the drain of the twentieth transistor and the gate of the twentieth transistor, respectively. The drain of the seventeenth transistor is electrically connected to the drain of the nineteenth transistor and the gate of the nineteenth transistor, respectively, and the source of the nineteenth transistor is electrically connected to the drain of the twenty-first transistor and the gate of the twenty-first transistor, respectively. The gate of the sixteenth transistor is connected to the low-temperature compensation zero-temperature voltage, the gate of the seventeenth transistor is connected to the negative temperature coefficient voltage, the source of the twentieth transistor is grounded, and the source of the twenty-first transistor is grounded.

10. The bandgap reference voltage source circuit according to claim 8, characterized in that, The high-temperature compensation point determination circuit includes: a 23rd transistor, a 24th transistor, a 25th transistor, a 26th transistor, a 27th transistor, a 28th transistor, a 29th transistor, and a second current source; The gate of the 29th transistor is connected to a second enable signal, the source of the 29th transistor is connected to the power supply voltage, and the drain of the 29th transistor is electrically connected to the input terminal of the second current source. The output terminal of the second current source is electrically connected to the source of the 23rd transistor and the source of the 24th transistor, respectively. The drain of the 24th transistor is electrically connected to the drain of the 25th transistor and the gate of the 25th transistor, respectively. The source of the 25th transistor is electrically connected to the drain of the 27th transistor and the gate of the 27th transistor, respectively. The drain of the 23rd transistor is electrically connected to the drain of the 26th transistor and the gate of the 26th transistor, respectively; and the source of the 26th transistor is electrically connected to the drain of the 28th transistor and the gate of the 28th transistor, respectively. The gate of the 23rd transistor is connected to the positive temperature coefficient voltage, the gate of the 24th transistor is connected to the high temperature compensation zero temperature voltage, the source of the 27th transistor is grounded, and the source of the 28th transistor is grounded.

11. The bandgap reference voltage source circuit according to claim 9, characterized in that, The low-temperature compensation circuit includes: a thirtieth transistor, a thirty-first transistor, a thirty-second transistor, a thirty-third transistor, and a third current source; the thirtieth transistor is a Native NMOS transistor. The gate of the thirtieth transistor is connected to the bandgap reference voltage, the drain of the thirtieth transistor is connected to the power supply voltage, the source of the thirtieth transistor is electrically connected to the drain of the thirty-first transistor, the gate of the thirty-first transistor is electrically connected to the gate of the nineteenth transistor, the gate of the thirty-second transistor is electrically connected to the gate of the eighteenth transistor, and the drain of the thirty-second transistor is electrically connected to the second terminal of the fifth resistor. The source of the thirty-first transistor is electrically connected to the source of the thirty-second transistor and the input terminal of the third current source, respectively. The output terminal of the third current source is electrically connected to the drain of the thirty-third transistor. The gate of the thirty-third transistor is connected to the first enable signal, and the source of the thirty-third transistor is grounded.

12. The bandgap reference voltage source circuit according to claim 10, characterized in that, The high-temperature compensation circuit includes: a 34th transistor, a 35th transistor, a 36th transistor, a 37th transistor, and a fourth current source; the 34th transistor is a Native NMOS transistor. The gate of the thirty-fourth transistor is connected to the bandgap reference voltage, the drain of the thirty-fourth transistor is connected to the power supply voltage, the source of the thirty-fourth transistor is electrically connected to the drain of the thirty-fifth transistor, the gate of the thirty-fifth transistor is electrically connected to the gate of the twenty-fifth transistor, the gate of the thirty-seventh transistor is electrically connected to the gate of the twenty-sixth transistor, and the drain of the thirty-seventh transistor is electrically connected to the second terminal of the fifth resistor. The source of the thirty-fifth transistor is electrically connected to the source of the thirty-seventh transistor and the input terminal of the fourth current source, respectively. The output terminal of the fourth current source is electrically connected to the drain of the thirty-sixth transistor. The gate of the thirty-sixth transistor is connected to the first enable signal, and the source of the thirty-sixth transistor is grounded.

13. A method for calibrating a bandgap reference voltage source, characterized in that, The bandgap reference voltage source calibration method is applied to the bandgap reference voltage source circuit as described in any one of claims 2-12, and the bandgap reference voltage source calibration method includes: After fabrication, for each trimming code value, the bandgap reference voltage corresponding to the trimming code value is detected, and the temperature curve of the bandgap reference voltage is obtained. The trimming code value is a positive integer greater than or equal to zero, and the correction adjustment signal is the signal obtained after binary conversion of the trimming code value. For each of the temperature curves, determine the extreme temperature of the temperature curve; For each temperature curve, with the extreme temperature as the center, record the voltages corresponding to the same preset step size temperatures on the left and right sides to obtain the first deviation voltage and the second deviation voltage. Calculate the absolute value of the difference between the first deviation voltage and the second deviation voltage to obtain multiple deviation voltages; Find the minimum value among the multiple deviation voltages, and take the adjustment code value corresponding to the minimum value among the multiple deviation voltages as the target adjustment code value, and burn the target adjustment code value into the chip where the bandgap reference voltage source circuit is located; The absolute value of the bandgap reference voltage is detected at room temperature; When the absolute value of the bandgap reference voltage is greater than or equal to 1.246V, the target adjustment code value is subtracted from the preset code value to determine the final adjustment code value; When the absolute value of the bandgap reference voltage is less than or equal to 1.21V, the target adjustment code value is added to the preset code value to determine the final adjustment code value. After the final adjustment code value is determined, the bandgap reference voltage is compensated for either high temperature or low temperature.

14. A chip, characterized in that, include: The bandgap reference voltage source circuit as described in any one of claims 1-12.

15. An electronic device, characterized in that, include: The chip as described in claim 14.

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