Modeling method of FDSOI-SRAM device at extremely low temperature

By constructing an FDSOI transistor model at extremely low temperatures and optimizing the aspect ratio of the 6T structure, the problem of insufficient adaptability of existing TCAD models to the low-temperature characteristics of FDSOI-SRAM devices was solved, achieving accurate device modeling and high-precision simulation results.

CN121787359APending Publication Date: 2026-04-03SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-23
Publication Date
2026-04-03

AI Technical Summary

Technical Problem

Existing TCAD models are not well adapted to the low-temperature characteristics of FDSOI processes, making it difficult to accurately characterize the physical and electrical properties of FDSOI-SRAM devices under low-temperature conditions.

Method used

A thermodynamic model was used to couple the carrier transport equation with the lattice temperature to construct an FDSOI transistor model at extremely low temperatures. By optimizing the aspect ratio of the 6T structure, an FDSOI-SRAM device model was built to accurately capture the low-temperature characteristics of the device.

Benefits of technology

It achieves accurate modeling of FDSOI-SRAM devices at extremely low temperatures, improves the accuracy of the model in the subthreshold and linear regions, and ensures the accuracy of simulation results.

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Abstract

The technical problem to be solved by the invention is to provide the modeling method for the FDSOI-SRAM device at the extremely low temperature, and the physical behavior and the electrical performance of the FDSOI-SRAM device at the low temperature are accurately represented. In order to solve the problem, the modeling method of the FDSOI-SRAM device at the extremely low temperature, provided by the invention, comprises the following steps of: modeling and calibrating an FDSOI transistor at normal temperature; establishing and calibrating an FDSOI transistor model at extremely low temperature; and modeling the FDSOI-SRAM device at an extremely low temperature. According to the technical scheme, a foundation is laid through normal-temperature FDSOI transistor modeling and calibration, during extremely-low-temperature modeling, a thermodynamic model is adopted to couple a carrier transport equation and lattice temperature, various low-temperature physical models such as thin silicon layer mobility are incorporated, the low-temperature behavior of the device is accurately captured, and the precision of a sub-threshold region and a linear region is ensured.
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