Terahertz radiation power efficient thermoelectric conversion technology based on on-chip micro-nano integration technology

Abstract

The invention discloses a terahertz radiation power efficient thermoelectric conversion technology based on an on-chip micro-nano integration process, and belongs to the field of terahertz power measurement device integration. The terahertz radiation power efficient thermoelectric conversion technology comprises the following steps: preparing a thermosensitive element on a substrate through a micro-nano deposition process; an absorption unit is prepared on a thermosensitive element through processes such as thermal evaporation, magnetron sputtering or laser direct writing, so that a weak thermal signal is directly conducted to the thermosensitive element; a patterned electrode is prepared on a thermosensitive element through ultraviolet lithography, magnetron sputtering and other processes, and integration of a detection unit is achieved. Through stable connection between the plurality of absorption units and the heat insulation material, integration of the detection array is realized. And high-stability connection of the detection array, the thermoelectric conversion circuit and the supporting part is realized through a threaded connection mode and the like, the terahertz signal thermoelectric conversion array with an integrated structure is integrated, and high-reliability measurement of the terahertz signal radiation power is realized. Furthermore, the terahertz power of different spectrum bands can be measured by replacing the detection arrays with different absorption responses; by replacing thermoelectric conversion circuits with different measurement resolutions and measurement ranges, high-resolution measurement of terahertz signals with different powers can be realized, so that the requirements of thermoelectric conversion performance of different terahertz signals are met.

Description

Technical Field

[0001] This invention belongs to the field of terahertz power measurement device integration, and specifically relates to a high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process. Background Technology

[0002] Terahertz waves are electromagnetic waves located between the microwave and infrared bands, with frequencies ranging from 0.1 THz to 10 THz. With technological advancements and cost reductions, terahertz instruments are moving from the laboratory to industrial applications, becoming one of the core tools driving the development of next-generation high-tech industries. However, for a long time, due to the lack of effective detection technologies, existing terahertz technologies have been unable to meet the rapidly developing needs of important fields such as medical imaging, environmental monitoring, biomedicine, security inspection, and military communications. Therefore, there is an urgent need to develop terahertz testing instruments such as power meters, signal analyzers, and frequency meters to ensure the development and application of terahertz technology.

[0003] Among the terahertz measurement parameters, power is one of the most fundamental and crucial. Power measurement is typically based on converting terahertz energy into thermal energy. Therefore, a terahertz power meter generally consists of a terahertz induction absorption and heat signal conversion section and a measurement and display section that performs the thermoelectric conversion. However, the absorption efficiency, conduction efficiency, and conversion efficiency of the integrated terahertz power meter all affect the performance of the terahertz thermoelectric conversion, making it difficult to achieve accurate and efficient measurement of terahertz power. To address these issues, this design proposes a high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration technology. This technology achieves the integration of a high-performance terahertz power meter while ensuring absorption efficiency, conduction efficiency, and conversion efficiency. Summary of the Invention

[0004] A high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration is characterized by: to measure the weak temperature signal generated by the absorption of terahertz waves, a thermistor is deposited between the absorbing unit and the substrate using a micro-nano deposition process to efficiently sense the temperature change of the absorbing unit after terahertz absorption. Patterned electrodes are photolithographically fabricated on the thermistor to form detection units, and multiple detection units are integrated with an insulating material to form a detection array. The detection array is then connected to a thermoelectric conversion circuit via the patterned electrodes to form a thermoelectric conversion array, achieving high-performance thermoelectric conversion of the terahertz signal.

[0005] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that: the substrate used is usually quartz or the like, and there are two wire holes on the substrate for connecting the patterned electrodes and the thermoelectric conversion circuit.

[0006] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that: the thermistor used is usually vanadium oxide, niobium pentanitride, etc.

[0007] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that: the selected absorption unit can be a coating, an absorption film, or a metasurface, etc.

[0008] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that: the thermistor is prepared by directly depositing it on the substrate through processes such as magnetron sputtering or thermal evaporation.

[0009] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that: the absorption unit used is usually a coating material, thin film structure and metasurface with high absorption efficiency in the required spectrum, which is prepared on the thermistor by processes such as imprinting, thermal evaporation, magnetron sputtering deposition or ultraviolet lithography.

[0010] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that the patterned electrodes used are usually made of platinum, gold, silver, copper, etc.

[0011] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology is characterized in that the patterned electrode is prepared on the thermistor by processes such as ultraviolet lithography and magnetron sputtering deposition.

[0012] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that the insulation material used is usually polyimide, epoxy resin and other materials.

[0013] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized by: multiple detection units are arrayed and connected by means of threaded connection, adhesive bonding or key connection to form an integrated detection array, and each detection unit is separated by heat insulation material and then fixed on a fixed base by means of adhesive bonding.

[0014] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology is characterized in that: the thermoelectric conversion circuit used is usually a temperature measurement circuit with μK resolution, and the noise equivalent power is as low as possible and the sensitivity is as high as possible.

[0015] The above-mentioned high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integration process is characterized in that: the patterned electrode and the thermoelectric conversion circuit are connected by wires through wire holes, and the fixed base of the detection array and the thermoelectric conversion circuit are fixed to the support structure and the support base by means of threaded connection, key connection or adhesive bonding, etc., and then the support structure and the support base are connected by means of threaded connection, key connection or adhesive bonding, etc., to realize the integration of the terahertz signal thermoelectric conversion array.

[0016] This invention has the following innovations and advantages:

[0017] 1. This invention proposes a method for efficient conduction of weak temperature signals based on on-chip micro-nano integration technology. A thermistor with a high temperature coefficient of resistance is deposited on a substrate material using processes such as thermal evaporation or magnetron sputtering. Then, an absorption unit is fabricated on the thermistor using processes such as ultraviolet lithography and magnetron sputtering deposition, forming an integrated structure of the absorption unit and the thermistor with direct interface thermal coupling. This structure eliminates the interface thermal resistance of traditional attached structures, significantly reducing heat loss and response hysteresis, thereby achieving lossless conduction of the thermal signal to the thermistor. This allows the thermistor to effectively detect the weak thermal signal converted by the absorption unit under terahertz radiation energy, ensuring high-resolution measurement of terahertz power.

[0018] 2. This invention proposes a method for the efficient integration of a detector array and a thermoelectric conversion circuit based on patterned electrodes. The patterned electrodes are typically made of metallic materials with high electrical conductivity. The patterned electrodes are fabricated on a thermistor using processes such as ultraviolet lithography and magnetron sputtering deposition, providing a foundation for the subsequent integration of the thermistor and the thermoelectric conversion circuit. The detector array is integrated through reliable connections between multiple detector units and insulating materials, enabling high-resolution detection of terahertz signals over a wide incident range. The integration of the detector array and the thermoelectric conversion circuit is achieved through patterned electrodes, and further integration of the terahertz signal thermoelectric conversion array is achieved through reliable connections with a support structure and base, providing the possibility for efficient thermoelectric conversion of terahertz signals.

[0019] 3. This invention proposes a highly efficient integration method for terahertz signal thermoelectric conversion arrays based on variable detector arrays and thermoelectric conversion circuits. By integrating terahertz signal thermoelectric conversion arrays with detector arrays having different efficient absorption response spectral bands, the power of terahertz signals in different spectral bands can be measured. By employing bidirectional constant-voltage driven differential amplifier circuits with different temperature measurement resolutions and temperature measurement ranges as the thermoelectric conversion circuit, high-resolution measurement of terahertz signals with different power can be achieved. By changing the detector array and thermoelectric conversion circuit, the required thermoelectric conversion performance for different terahertz signals can be met.

[0020] The specific embodiments of the present invention will now be described in further detail with reference to the accompanying drawings. Attached Figure Description

[0021] The accompanying drawings described below are merely some examples. Those skilled in the art can derive other drawings from these drawings without any inventive effort. In the drawings:

[0022] Figure 1 This is a schematic diagram of the terahertz signal thermoelectric conversion array device described in this invention.

[0023] Figure 2 This is a schematic diagram of the fabrication of a thermistor on a substrate using a magnetron sputtering process as described in this invention.

[0024] Figure 3 This is a schematic diagram of the fabrication of an absorption unit on a thermistor as described in this invention.

[0025] Figure 4 This is a schematic diagram of the fabrication of patterned electrodes on a thermistor by ultraviolet lithography and magnetron sputtering as described in this invention.

[0026] Figure 5 This is a schematic diagram of a reliable integrated detection array consisting of multiple detection units and insulation materials as described in this invention.

[0027] Figure 6 This is a schematic diagram illustrating the reliable connection between the detection array and the fixed base described in this invention.

[0028] Figure 7 This is a schematic diagram of the terahertz signal thermoelectric conversion array integrating the detection array and thermoelectric conversion circuit described in this invention. Detailed Implementation

[0029] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings:

[0030] Appendix Figure 1 This is a schematic diagram of the terahertz signal thermoelectric conversion array device described in this invention. Wherein 1 is the terahertz detection array; 2 is the fixed base; 3 is the support structure; and 4 is the supporting base.

[0031] Appendix Figure 2 This is a schematic diagram of the thermistor described in this invention fabricated on a substrate using a magnetron sputtering process. 5 represents the thermistor, 6 represents the substrate with a wire hole, and 7 represents the integrated structure of the thermistor and the substrate. The thermistor is deposited on the substrate using magnetron sputtering or other processes.

[0032] Appendix Figure 3This is a schematic diagram illustrating the fabrication of an absorption unit on a thermistor according to the present invention. In the diagram, 8 represents the absorption unit, and 9 represents the integrated structure of the absorption unit, the thermistor, and the substrate. Since the absorption unit can be a coating, a thin film structure, or a metasurface, it can be fabricated on the thermistor using methods such as imprinting, magnetron sputtering deposition, or laser direct writing. This forms a directly interface-coupled integrated structure of the absorption unit and the thermistor, enabling effective detection of the weak thermal signal generated by the absorption unit by the thermistor, thus ensuring high-resolution measurement of terahertz power.

[0033] Appendix Figure 4 This is a schematic diagram illustrating the fabrication of patterned electrodes on a thermistor using ultraviolet lithography and magnetron sputtering, as described in this invention. In the diagram, 10 represents the patterned electrode, 11 represents the wire, and 12 represents the detection unit. The patterned electrode is typically made of a highly conductive metal material and is fabricated on the thermistor using processes such as ultraviolet lithography and magnetron sputtering. This enables the integration of the terahertz detection unit, providing the foundation for the subsequent connection and integration of various absorption units and thermoelectric conversion circuits, as well as the effective detection of weak temperature signals.

[0034] Appendix Figure 5 This is a schematic diagram of the reliably connected integrated detection array of multiple detection units and insulation materials described in this invention. 13 represents the insulation material. Multiple detection units are connected to the integrated detection array via adhesive bonding or other methods, and the independence of detection is ensured by the insulation material separating each detection unit. Through the integrated detection array, high-resolution detection of terahertz signals with a wide incident range can be achieved.

[0035] Appendix Figure 6 This is a schematic diagram illustrating the reliable connection between the detection array and the fixed base described in this invention. The reliable connection between the detection array and the fixed base is achieved through methods such as adhesive bonding, providing a structural basis for the subsequent integration of the detection array with the thermoelectric conversion circuit.

[0036] Appendix Figure 7 This is a schematic diagram of the terahertz signal thermoelectric conversion array integrating the detection array and thermoelectric conversion circuit described in this invention. 14 represents the thermoelectric conversion circuit, and 15 represents a bolt. High-stability connections are achieved between the detection array and the support structure, the thermoelectric conversion circuit and the support base, and the support structure and the support base through threaded connections and other methods. This integrates a structurally unified terahertz signal thermoelectric conversion array, thereby enabling highly reliable measurement of terahertz signal radiation power.

Claims

1. A high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology, characterized in that: To measure the weak temperature signal generated by the absorption of terahertz waves, a thermistor is deposited between the absorbing unit and the substrate using a micro-nano deposition process, efficiently sensing the temperature change after the absorbing unit absorbs terahertz waves. Patterned electrodes are photolithographically fabricated on the thermistor to form detection units, and multiple detection units are integrated with an insulating material to form a detection array. The detection array is then connected to a thermoelectric conversion circuit via the patterned electrodes to form a thermoelectric conversion array, achieving high-performance thermoelectric conversion of the terahertz signal.

2. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: The substrate used is usually quartz or similar material, and there are two wire holes on the substrate for connecting the patterned electrodes and the thermoelectric conversion circuit.

3. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: The thermistors used are typically made of vanadium oxide, niobium pentanitride, etc.

4. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: Thermistors are fabricated by directly depositing them on a substrate using processes such as magnetron sputtering or thermal evaporation.

5. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: The absorption units used are typically coating materials, thin film structures, and metasurfaces with high absorption efficiency in the required spectral range, and are fabricated on the thermistor through processes such as imprinting, thermal evaporation, magnetron sputtering deposition, or ultraviolet lithography.

6. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: The patterned electrodes used are typically made of platinum, gold, silver, copper, etc.

7. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: Patterned electrodes are fabricated on thermistors using processes such as ultraviolet lithography and magnetron sputtering deposition.

8. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: The insulation materials used are usually polyimide, epoxy resin, etc.

9. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: Multiple detection units are connected in an array using methods such as threaded connection, adhesive bonding or key connection to form an integrated detection array, and each detection unit is separated from the others by heat insulation material.

10. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: The thermoelectric conversion circuit used is typically a temperature measurement circuit with μK resolution, and the noise equivalent power is as low as possible, while the sensitivity is as high as possible.

11. The high-efficiency thermoelectric conversion technology for terahertz radiation power based on on-chip micro-nano integrated technology according to claim 1, characterized in that: The patterned electrodes and the thermoelectric conversion circuit are connected by wires through wire holes. The detection array and the thermoelectric conversion circuit are fixed to the support structure and the support base by means of threaded connection, key connection or adhesive bonding. The support structure and the support base are then connected by means of threaded connection, key connection or adhesive bonding to realize the integration of the terahertz signal thermoelectric conversion array.

Images