A film layer thickness control device

Abstract

The application provides a film layer thickness control device, which comprises an evaporation substrate, at least one evaporation point source for heating and evaporating evaporation material to form an evaporation film layer on the side of the evaporation substrate facing the evaporation point source, a shielding plate arranged between the evaporation substrate and the evaporation point source, wherein the shielding plate has a spacing with the evaporation substrate, the orthographic projection of the shielding plate on the evaporation substrate is located in the evaporation substrate and covers the orthographic projection of the evaporation point source on the evaporation substrate, and a rotating mechanism connected with the evaporation substrate for driving the evaporation substrate to rotate, wherein the shielding plate shields the evaporation material particles close to the evaporation point source to form the evaporation film layer with uniform film thickness on the evaporation substrate during the rotation of the evaporation substrate. The application aims to provide a control device for controlling the deposition amount of evaporation material particles on the evaporation substrate to form an evaporation film layer with uniform film thickness on the evaporation substrate.

Description

Technical Field

[0001] This invention relates to the field of vapor deposition technology, and in particular to a film thickness control device. Background Technology

[0002] Organic light-emitting diode (OLED) devices offer several advantages over traditional liquid crystal displays (LCDs), including self-illumination, thinness, high contrast, wide viewing angles, and vibrant colors. Furthermore, OLED devices are significantly thinner than LCD devices, allowing them to be manufactured in various shapes such as bent, curved, and rolled forms, breaking through traditional screen designs and enabling their widespread application in wearable devices.

[0003] OLED devices are composed of multi-layer structures and are generally manufactured using vacuum evaporation processes, which deposit organic and metal materials layer by layer onto a substrate.

[0004] Currently, the commonly used evaporation equipment is point source evaporation equipment. However, the gaseous particles of the evaporated or sublimated organic materials are not evenly distributed in space, which leads to differences in the film thickness deposited on the substrate. Summary of the Invention

[0005] In view of this, the present invention aims to provide a film thickness control device to solve the problem of uneven film thickness in current substrate vapor deposition.

[0006] To achieve the above objectives, the technical solution of the present invention is implemented as follows:

[0007] A film thickness control device, comprising:

[0008] Evaporated substrate;

[0009] At least one vapor deposition point source is used to heat and evaporate the vapor deposition material so that the vaporized vapor deposition material particles form a vapor deposition film layer on the side of the vapor deposition substrate facing the vapor deposition point source.

[0010] A shielding plate is disposed between the vapor deposition substrate and the vapor deposition point source; wherein, there is a gap between the shielding plate and the vapor deposition substrate, the orthographic projection of the shielding plate on the vapor deposition substrate is located inside the vapor deposition substrate, and covers the orthographic projection of the vapor deposition point source on the vapor deposition substrate.

[0011] A rotating mechanism is connected to the vapor deposition substrate and is used to drive the vapor deposition substrate to rotate. During the rotation of the vapor deposition substrate, the shielding plate blocks vapor deposition material particles near the vapor deposition point source from forming on the shielding plate, so as to form a vapor deposition film layer with uniform film thickness on the vapor deposition substrate.

[0012] Furthermore, the baffle is a fan-shaped baffle;

[0013] The width of the fan-shaped shielding plate and the thickness of the vapor-deposited film layer at the orthogonal projection of the fan-shaped shielding plate on the vapor-deposited substrate are negatively correlated. The width of the fan-shaped shielding plate is a plurality of chord lengths formed by the lines connecting two points on the two sides that are equidistant from the vertex.

[0014] Furthermore, the vapor-deposited substrate and the at least one vapor deposition point source are located within the vapor deposition chamber. In the case of multiple vapor deposition point sources, the multiple vapor deposition point sources are evenly distributed at the bottom of the vapor deposition chamber.

[0015] The shielding plate is connected to the rotating mechanism and rotates with the rotating mechanism so that the shielding plate rotates sequentially to be directly above the multiple vapor deposition point sources, so as to sequentially shield the vapor deposition material particles evaporated by the vapor deposition point sources.

[0016] Furthermore, when there is only one vapor deposition point source, the orthographic projection of the vapor deposition point source on the vapor deposition substrate is located at the center of the rotating circumferential surface where the vapor deposition substrate is located, or is off-center; the rotating circumferential surface is the circular trajectory of the vapor deposition substrate as it rotates.

[0017] Furthermore, the shielding plate is disposed in the area between the first line and the second line with the vapor deposition point source as the endpoint;

[0018] Wherein, the first connecting line is the line connecting the vapor deposition point source and the center of the rotating circumferential surface where the vapor deposition substrate is located, and the second connecting line is the line connecting the vapor deposition point source and the edge of the rotating circumferential surface where the vapor deposition substrate is located.

[0019] Furthermore, the size of the shielding plate and the vertical distance from the shielding plate to the vapor deposition point source are positively correlated;

[0020] The dimensions of the shielding plate include its radius and multiple chord widths, where the chord length is the length of the line connecting two points on each side of the shielding plate that are equidistant from the vertex.

[0021] Furthermore, the shield is a hollow shield, and the thickness of the shield is 1mm to 5mm.

[0022] Furthermore, the device also includes

[0023] Evaporation tray;

[0024] The vapor deposition substrate is located on the side of the vapor deposition tray facing the vapor deposition point source;

[0025] The vapor deposition tray is connected to the rotating mechanism so that it rotates under the drive of the rotating mechanism.

[0026] Furthermore, the vapor deposition tray includes a plurality of receiving slots, each of the receiving slots being used to accommodate one of the vapor deposition substrates;

[0027] The width of the shielding plate is negatively correlated with the thickness of the vapor-deposited film layer at its orthogonal projection on the vapor deposition tray. The width of the shielding plate is a plurality of chord lengths formed by the lines connecting two points on the two sides that are equidistant from the vertex.

[0028] Furthermore, the vapor-deposited substrate is a glass substrate containing electrodes.

[0029] Compared with the prior art, the film thickness control device provided by the present invention has the following advantages:

[0030] This invention discloses a film thickness control device, comprising: a vapor deposition substrate; at least one vapor deposition point source for heating and evaporating a vapor deposition material, so that vaporized vapor deposition material particles form a vapor deposition film layer on the side of the vapor deposition substrate facing the vapor deposition point source; a shielding plate disposed between the vapor deposition substrate and the vapor deposition point source; wherein the shielding plate and the vapor deposition substrate are spaced apart, the orthographic projection of the shielding plate on the vapor deposition substrate is located within the vapor deposition substrate, and covers the orthographic projection of the vapor deposition point source on the vapor deposition substrate; and a rotating mechanism connected to the vapor deposition substrate for driving the vapor deposition substrate to rotate, wherein during the rotation of the vapor deposition substrate, the shielding plate blocks vapor deposition material particles near the vapor deposition point source from forming on the shielding plate, thereby forming a vapor deposition film layer with uniform thickness on the vapor deposition substrate.

[0031] By setting a shielding plate between the evaporation point source and the evaporation substrate, the orthographic projection of the shielding plate on the evaporation substrate covers the orthographic projection of the evaporation point source on the evaporation substrate, so that the shielding plate partially blocks the evaporation material particles ejected from the evaporation point source. In this way, the amount of evaporation material particles deposited on the evaporation substrate is controlled, so as to form a evaporation film layer with uniform film thickness on the evaporation substrate. Attached Figure Description

[0032] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0033] Figure 1 A schematic diagram of the particle distribution of the vapor deposition material inside the vapor deposition chamber is shown;

[0034] Figure 2 A schematic diagram of a film thickness control device according to Embodiment 1 of the present invention is shown;

[0035] Figure 3A schematic diagram of the shape of the fan-shaped baffle plate according to an embodiment of the present invention is shown;

[0036] Figure 4 This diagram illustrates a projection of the vapor deposition point source onto the vapor deposition substrate, with the projection located at the center of the rotating circumferential surface of the vapor deposition substrate, according to an embodiment of the present invention.

[0037] Figure 5 This diagram illustrates a point where the orthographic projection of the vapor deposition point source on the vapor deposition substrate is located within the rotating circumferential surface of the vapor deposition substrate and is offset from the center.

[0038] Figure 6 This diagram illustrates a coordinate system according to an embodiment of the present invention, with the orthographic projection of the vapor deposition point source onto the vapor deposition substrate as the origin.

[0039] Figure 7 This diagram illustrates a coordinate system according to an embodiment of the present invention, with the orthographic projection of the vapor deposition point source onto the vapor deposition substrate as the origin.

[0040] Figure 8 The figure shows an example of the thickness of the vapor-deposited film at point C under different q values ​​according to an embodiment of the present invention;

[0041] Figure 9 The graph showing the thickness variation of the vapor-deposited film layer according to an embodiment of the present invention is shown.

[0042] Figure 10 This diagram illustrates a scenario where the orthographic projection of the vapor deposition point source on the vapor deposition substrate is located outside the rotating circumferential surface of the vapor deposition substrate.

[0043] Figure 11 The following diagram shows example images of the vapor-deposited film thickness at point C under different q values ​​according to an embodiment of the present invention;

[0044] Figure 12 The graph showing the thickness variation of the vapor-deposited film layer according to an embodiment of the present invention is shown.

[0045] Figure 13 A schematic diagram showing the position setting of the shield according to an embodiment of the present invention is shown;

[0046] Figure 14 A schematic diagram of the fan-shaped baffle structure according to an embodiment of the present invention is shown.

[0047] Figure label:

[0048] 101 - Evaporation substrate; 102 - At least one evaporation point source; 103 - Baffle plate; 104 - Rotation mechanism. Detailed Implementation

[0049] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0050] It should be noted that, without conflict, the embodiments and features in the embodiments of the present invention can be combined with each other.

[0051] Example 1

[0052] Organic light-emitting diode (OLED) devices offer several advantages over traditional liquid crystal displays (LCDs), including self-illumination, thinness, high contrast, wide viewing angles, and vibrant colors. Furthermore, OLED devices are significantly thinner than LCD devices, allowing for various forms such as bending, curvature, and curling, breaking through traditional screen designs and leading to their widespread use in wearable devices.

[0053] OLED devices are composed of a multi-layer structure and are manufactured using a vacuum evaporation process, in which organic and metal materials are deposited layer by layer on a substrate.

[0054] Vacuum evaporation deposition is a process in which a material is evaporated under vacuum conditions using a specific heating and evaporation method. The vaporized material particles rise to the substrate surface and condense to form a film. Vacuum evaporation deposition offers advantages such as simple film formation methods, high film purity and density, and unique film structure and properties.

[0055] Currently, most commonly used vacuum evaporation equipment is point source evaporation equipment.

[0056] A point source refers to a vapor deposition crucible with a small opening radius and a circular shape.

[0057] In point-source evaporation, the point-source crucible is heated under high vacuum, causing the evaporation material contained within to evaporate or sublimate into gaseous particles. These gaseous particles are rapidly transported from the point-source crucible to the substrate surface, moving in a straight line to the surface of the rotating substrate. There, they nucleate and grow into a solid thin film, ultimately resulting in atomic reconstruction and / or the breaking and recombination of chemical bonds.

[0058] A point source vapor deposition equipment typically contains multiple point sources, evenly distributed on the circumference of the bottom of the chamber. During vapor deposition, the deposition substrate rotates at a certain speed driven by a rotating mechanism, ensuring that the vapor deposition thickness is consistent on the same rotating circumference of the deposition substrate for point sources whose orthographic projection on the deposition substrate does not coincide with the center of the rotating circumference.

[0059] The rotating circumferential surface of the vapor-deposited substrate refers to the circular trajectory of the vapor-deposited substrate as it rotates under the drive of the rotating mechanism.

[0060] However, since the vaporized or sublimated material particles are not evenly distributed at the same horizontal height in the vapor deposition chamber, the film thickness deposited on the vapor deposition substrate also varies.

[0061] Reference Figure 1 , Figure 1 A schematic diagram of the particle distribution of the vapor deposition material inside the vapor deposition chamber is shown, such as... Figure 1 As shown, within the vapor deposition chamber, at the same horizontal height 1, the amount of vapor deposition material particles distributed in regions 1, 2, and 3 is different, which results in different actual vapor deposition film thicknesses in different regions of the vapor deposition substrate.

[0062] Therefore, embodiments of the present invention provide a film thickness control device to ensure that the thickness of the vapor-deposited film layer deposited on the vapor-deposited substrate is uniform.

[0063] Reference Figure 2 , Figure 2 A schematic diagram of a film thickness control device according to Embodiment 1 of the present invention is shown, as follows: Figure 2 As shown, it includes:

[0064] Evaporated substrate 101;

[0065] At least one vapor deposition point source 102 is used to heat and evaporate the vapor deposition material so that the vaporized vapor deposition material particles form a vapor deposition film layer on the side of the vapor deposition substrate 101 facing the vapor deposition point source 102.

[0066] A shielding plate 103 is disposed between the vapor deposition substrate 101 and the vapor deposition point source 102; wherein, there is a gap between the shielding plate 103 and the vapor deposition substrate 101, and the orthographic projection of the shielding plate 103 on the vapor deposition substrate 101 is located inside the vapor deposition substrate 101 and covers the orthographic projection of the vapor deposition point source 102 on the vapor deposition substrate 101.

[0067] The rotating mechanism 104 is connected to the vapor deposition substrate 101 and is used to drive the vapor deposition substrate 101 to rotate. During the rotation of the vapor deposition substrate 101, the shielding plate 103 blocks vapor deposition material particles near the vapor deposition point source 102 from forming on the shielding plate 103, so as to form a vapor deposition film layer with uniform film thickness on the vapor deposition substrate 101.

[0068] In the chamber of the point source vapor deposition equipment, the vapor deposition substrate 101 is typically located at the top of the chamber. The vapor deposition substrate 101 is connected to a rotating mechanism 104, which is connected to the top of the vapor deposition chamber. Driven by the rotating mechanism, the vapor deposition substrate rotates at a first preset speed during the vapor deposition process.

[0069] At least one vapor deposition point source 102 is located at the bottom of the vapor deposition chamber. When there is only one vapor deposition point source 102, its orthographic projection onto the vapor deposition substrate 101 is located at or off-center from the center of the rotating circumferential surface of the vapor deposition substrate 101. When there are multiple vapor deposition point sources 102, they are evenly distributed in a circular pattern at the bottom of the vapor deposition chamber. The orthographic projections of these multiple vapor deposition point sources 102 onto the vapor deposition substrate 101 are off-center from the center of the rotating circumferential surface of the vapor deposition substrate 101. Specifically, the orthographic projections of these multiple vapor deposition point sources 102 onto the vapor deposition substrate 101 are located either within or outside the rotating circumferential surface of the vapor deposition substrate 101.

[0070] In one specific implementation, the rotating mechanism 104 is a concentric rotating axis.

[0071] A concentric rotating shaft is a type of rotating shaft that achieves different rotational speeds on the same axis through methods such as ball bearings.

[0072] A shielding plate 103 is disposed between the vapor deposition substrate 101 and the vapor deposition point source 102, and is connected to the rotation mechanism 104. There is a gap between the shielding plate 103 and the vapor deposition substrate 101, and a gap between the shielding plate 103 and the vapor deposition point source 102.

[0073] The spacing between the shielding plate 103 and the vapor deposition substrate 101, as well as the spacing between the shielding plate 103 and the vapor deposition point source 102, can be set based on actual application requirements and are not limited here.

[0074] The orthographic projection of the shielding plate 103 on the vapor deposition substrate 101 is located inside the vapor deposition substrate 101 and covers the orthographic projection of the vapor deposition point source 102 on the vapor deposition substrate 101, so as to shield the vapor deposition material particles ejected by the vapor deposition point source 101.

[0075] The size of the shielding plate 103 is smaller than the size of the vapor deposition substrate 101, so as to shield a part of the vapor deposition substrate 101, such as a fan-shaped area.

[0076] During the vapor deposition process on the vapor deposition substrate 101, the vapor deposition material evaporates as the vapor deposition point source 102 heats up, vaporizes into particles, and gradually deposits onto the vapor deposition substrate 101. The vapor deposition substrate 101 rotates at a certain speed under the drive of the rotation mechanism 104. The shielding plate 103 remains relatively stationary with the vapor deposition point source 102. During the process of the vapor deposition substrate 101 rotating and depositing the vapor deposition film layer, the shielding plate 103 shields the fan-shaped area of ​​the vapor deposition substrate 101 that has rotated directly above it. By shielding more of the part of the rotating circumference of the vapor deposition substrate 101 near the center and less of the part far from the center, the film layer thickness of each area on the vapor deposition substrate 101 is balanced, thereby achieving the purpose of making the vapor deposition film layer thickness of each area on the vapor deposition substrate 101 uniform.

[0077] In one optional embodiment, the vapor deposition substrate and the at least one vapor deposition point source are located in the vapor deposition chamber, and if there are multiple vapor deposition point sources, the multiple vapor deposition point sources are evenly distributed at the bottom of the vapor deposition chamber.

[0078] The shielding plate is connected to the rotating mechanism and rotates with the rotating mechanism so that the shielding plate rotates sequentially to be directly above the multiple vapor deposition point sources, so as to sequentially shield the vapor deposition material particles evaporated by the vapor deposition point sources.

[0079] In one optional embodiment, when there is only one vapor deposition point source, the orthographic projection of the vapor deposition point source on the vapor deposition substrate is located at the center of the rotating circumferential surface on which the vapor deposition substrate is located, or is off-center; the rotating circumferential surface is the circular trajectory of the vapor deposition substrate as it rotates.

[0080] When there is only one vapor deposition point source 102, the shielding plate 103 is positioned on a straight line between the vapor deposition point source 102 and the vapor deposition substrate 101 and does not rotate; when there are multiple vapor deposition point sources 102, the shielding plate 103 rotates with the rotation mechanism 104 so that it rotates sequentially to be directly above multiple vapor deposition point sources 102 during the vapor deposition process.

[0081] During the vapor deposition process on the vapor deposition substrate 101, at least one vapor deposition point source 102 heats and evaporates the vapor deposition material, causing it to vaporize. Driven by the rotation mechanism 104, the shielding plate 103 rotates to be directly above the vapor deposition point source 102 currently in operation, thereby shielding the vapor deposition material particles ejected from it, ensuring that the amount of vapor deposition material particles deposited in each area of ​​the vapor deposition substrate 101 is the same, thus forming a vapor deposition film layer with uniform thickness.

[0082] During this process, if multiple vapor deposition point sources 102 work in sequence, the shielding plate 103 will rotate sequentially to be directly above the vapor deposition point source 102 that is currently working; if multiple vapor deposition point sources 102 work at the same time, the shielding plate 103 will continue to rotate at a second preset speed.

[0083] The second preset speed is different from the first preset speed. The second preset speed may be less than or greater than the first preset speed, but this is not limited here.

[0084] This invention provides a film thickness control device, comprising: a vapor deposition substrate; at least one vapor deposition point source for heating and evaporating vapor deposition material, so that vaporized vapor deposition material particles form a vapor deposition film layer on the side of the vapor deposition substrate facing the vapor deposition point source; a shielding plate disposed between the vapor deposition substrate and the vapor deposition point source; wherein the shielding plate and the vapor deposition substrate are spaced apart, the orthographic projection of the shielding plate on the vapor deposition substrate is located within the vapor deposition substrate, and covers the orthographic projection of the vapor deposition point source on the vapor deposition substrate; and a rotating mechanism connected to the vapor deposition substrate for driving the vapor deposition substrate to rotate, wherein during the rotation of the vapor deposition substrate, the shielding plate blocks vapor deposition material particles near the vapor deposition point source from forming on the shielding plate, thereby forming a vapor deposition film layer with uniform thickness on the vapor deposition substrate.

[0085] By setting a shielding plate between the evaporation point source and the evaporation substrate, the orthographic projection of the shielding plate on the evaporation substrate covers the orthographic projection of the evaporation point source on the evaporation substrate, so that the shielding plate partially blocks the evaporation material particles ejected from the evaporation point source. In this way, the amount of evaporation material particles deposited on the evaporation substrate is controlled, so as to form a evaporation film layer with uniform film thickness on the evaporation substrate.

[0086] In one alternative embodiment, the vapor-deposited substrate is a glass substrate containing electrodes.

[0087] In one optional embodiment, the baffle is a fan-shaped baffle;

[0088] The width of the fan-shaped shielding plate and the thickness of the vapor-deposited film layer at the orthogonal projection of the fan-shaped shielding plate on the vapor-deposited substrate are negatively correlated. The width of the fan-shaped shielding plate is a plurality of chord lengths formed by the lines connecting two points on the two sides that are equidistant from the vertex.

[0089] In this embodiment of the invention, the shape of the shield 103 is fan-shaped.

[0090] The width of the fan-shaped baffle plate is negatively correlated with the thickness of the vapor-deposited film layer at its orthogonal projection onto the vapor-deposited substrate. The width of the fan-shaped baffle plate is defined by multiple chord lengths formed by the lines connecting two points on each side that are equidistant from the vertex.

[0091] In this embodiment of the invention, the shape of the shielding plate is set to a fan shape to shield the corresponding area of ​​the vapor deposition substrate. Since more parts of the rotating circumference of the vapor deposition substrate are shielded near the center and less parts are shielded away from the center, the film thickness of each area on the vapor deposition substrate is balanced, so as to achieve the purpose of making the vapor deposition film thickness of each area on the vapor deposition substrate uniform.

[0092] Reference Figure 3 , Figure 3 A schematic diagram of the shape of the fan-shaped baffle plate according to an embodiment of the present invention is shown, such as... Figure 3 As shown, based on the fan-shaped shape of the fan-shaped baffle, the concept of its width is the multiple chord lengths formed by the lines connecting two points on the two sides that are equidistant from the vertex. These multiple chord lengths are different from each other.

[0093] For example, points A and a are two points on the two sides of the fan-shaped baffle that are equidistant from the vertex O. The length of the chord formed by the lines connecting points A and a is the width of region 1 of the fan-shaped baffle.

[0094] Points B and b are two points on the two sides of the fan-shaped baffle that are equidistant from the vertex O. The length of the chord formed by the line connecting points B and b is the width of region 2 of the fan-shaped baffle.

[0095] It is understood that the above examples are only for better understanding of the solutions provided in the embodiments of the present invention, and do not constitute the only limitation of the present invention.

[0096] When determining the width of each region of the fan-shaped baffle, the thickness of the vapor-deposited film layer in each region of the vapor-deposited substrate is first calculated to determine the thinnest point of the vapor-deposited film layer. Based on the difference between the thickness of the vapor-deposited film layer in each region of the vapor-deposited substrate and the thickness of the vapor-deposited film layer at the thinnest point, the width of each region of the corresponding fan-shaped baffle is determined.

[0097] The method for calculating the thickness of the vapor-deposited film layer in each region of the vapor-deposited substrate is explained below.

[0098] Reference Figure 4 , Figure 4 This diagram illustrates an embodiment of the invention where the orthographic projection of the evaporation point source on the evaporation substrate is located at the center of a circular surface of rotation on the evaporation substrate. Figure 4 As shown, in this case, assuming the radius of the rotating circular trajectory of the vapor deposition substrate is R and the vertical distance between the vapor deposition substrate and the vapor deposition point source is h, then when the vapor deposition substrate does not rotate, the film thickness T deposited at any point C on the vapor deposition substrate per unit time satisfies the following formula (1):

[0099]

[0100] Where r is the distance from point C to the center of the rotating circumferential surface of the vapor deposition substrate, m is the straight-line distance from the vapor deposition point source to the edge of the rotating circumferential surface of the vapor deposition substrate, and ρ is the polar radius of point C in the polar coordinate system with the center of the rotating circumferential surface of the substrate as the pole.

[0101] Assuming the time for the vapor deposition substrate to rotate one revolution is t seconds, the film thickness T1 deposited at point C after one revolution of the vapor deposition substrate satisfies the following formula (2):

[0102]

[0103] As can be seen from formula (2), when the distance h between the evaporation point source and the evaporation substrate is fixed, the smaller the distance r from point C to the center of the rotating circumferential surface of the evaporation substrate, the larger the film thickness T1 deposited by point C after the evaporation substrate rotates once. That is to say, on the rotating circumferential surface of the evaporation substrate, the closer the area is to the center of the rotating circumferential surface, the thicker the deposited evaporation film layer; while the area is far away from the center of the rotating circumferential surface, the thinner the deposited evaporation film layer.

[0104] Reference Figure 5 , Figure 5 This diagram illustrates a point where the orthographic projection of the evaporation point source onto the evaporation substrate, according to an embodiment of the present invention, lies within the rotating circumferential surface of the evaporation substrate and is offset from the center. Figure 5 As shown, in this case, assuming that the distance from the orthographic projection point O of the evaporation point source on the evaporation substrate to the center O' of the rotating circumferential surface of the evaporation substrate is n, the film thickness T2 deposited at any point C on the evaporation substrate per unit time satisfies the following formula (3):

[0105]

[0106] Where r1 is the straight-line distance from point C to point O, m is the straight-line distance from the vapor deposition point source to the edge of the rotating circumferential surface of the vapor deposition substrate, and ρ is the polar radius of point C in the polar coordinate system with the center of the rotating circumferential surface of the substrate as the pole.

[0107] Reference Figure 6 , Figure 6 This diagram illustrates a coordinate system according to an embodiment of the present invention, with the orthographic projection of the evaporation point source onto the evaporation substrate as the origin. Figure 6 As shown, when the orthographic projection point O of the evaporation point source on the evaporation substrate is within the circumferential surface of the evaporation substrate and deviates from the center O', in order to calculate the thickness of the evaporation film layer in each region on the evaporation substrate, a coordinate system is first established with point O as the origin, and the x-axis passes through point O'. Then, for points located between point O and point O', the calculation of the evaporation film layer thickness satisfies the following formula:

[0108] Assuming the coordinates of any point C between point O and point O' are (x1, y1), then the circular surface of revolution of point C satisfies the following formula (4):

[0109]

[0110] Where n is the straight-line distance between point O and point O', and q is the straight-line distance between the points of intersection of the rotating circular surface of point O and point C with the x-axis closest to point O.

[0111] Then, by formula (4), the distance r1 between point C and point O' satisfies the following formula (5):

[0112]

[0113] Then, integrating formula (5), the thickness T3 of the vapor-deposited film layer deposited at point C after the vapor-deposited substrate is rotated by ts satisfies the following formula (6):

[0114]

[0115] Where n is the straight-line distance between point O and point O', q is the straight-line distance between the intersection points of the rotating circumferential surface of point O and point C and the x-axis that are closest to point O, x is the abscissa of point C, m is the straight-line distance from the vapor deposition point source to the edge of the rotating circumferential surface of the vapor deposition substrate, and h is the vertical distance between the vapor deposition substrate and the vapor deposition point source.

[0116] Reference Figure 7 , Figure 7 This diagram illustrates a coordinate system according to an embodiment of the present invention, with the orthographic projection of the evaporation point source onto the evaporation substrate as the origin. Figure 7 As shown, when the orthographic projection point O of the evaporation point source on the evaporation substrate is within the rotating circumferential surface of the evaporation substrate and deviates from the center O', in order to calculate the thickness of the evaporation film layer in each region of the evaporation substrate, a coordinate system is first established with point O as the origin and the x-axis passing through point O'. Then, for a point located between point O and the edge of the rotating circumferential surface of the evaporation substrate, the calculation of its evaporation film layer thickness satisfies the following formula:

[0117] Assuming that the coordinates of any point C between point O and the edge of the rotating circumferential surface of the vapor-deposited substrate are (x2, y2), then the rotating circumferential surface of point C satisfies the following formula (7):

[0118]

[0119] Where n is the straight-line distance between point O and point O', and q is the straight-line distance between the points of intersection of the rotating circular surface of point O and point C with the x-axis closest to point O.

[0120] Then, by formula (7), the distance r1 between point C and point O' satisfies the following formula (8):

[0121]

[0122] Then, integrating equation (8), the thickness T4 of the vapor-deposited film layer deposited at point C after the vapor-deposited substrate is rotated by ts satisfies the following equation (9):

[0123]

[0124] Where n is the straight-line distance between point O and point O', q is the straight-line distance between the intersection points of the rotating circumferential surface of point O and point C and the x-axis that are closest to point O, x is the abscissa of point C, m is the straight-line distance from the vapor deposition point source to the edge of the rotating circumferential surface of the vapor deposition substrate, and h is the vertical distance between the vapor deposition substrate and the vapor deposition point source.

[0125] Combining the two scenarios above, the thickness T of the deposited vapor-deposited film after rotating point C by ts tol The following formulas (10) to (11) are satisfied:

[0126] If 0 ≤ x ≤ 2n, then

[0127]

[0128] If x ≤ 0, x > 2n, then

[0129]

[0130] Where n is the straight-line distance between point O and point O', q is the straight-line distance between the intersection points of the rotating circumferential surface of point O and point C and the x-axis that are closest to point O, x is the abscissa of point C, m is the straight-line distance from the vapor deposition point source to the edge of the rotating circumferential surface of the vapor deposition substrate, and h is the vertical distance between the vapor deposition substrate and the vapor deposition point source.

[0131] As can be seen from formulas (10) to (11), in a fixed vapor deposition chamber, the thickness of the vapor deposition film layer deposited on the vapor deposition substrate is only related to the q value.

[0132] Reference Figure 8 , Figure 8 The following diagram illustrates example images of the vapor-deposited film thickness at point C under different q values ​​according to embodiments of the present invention. Figure 8 As shown, assuming h is 10, n is 2, and R is 3, the thickness of the vapor-deposited film increases as the value of q increases from -1 to 2.

[0133] Reference Figure 9 , Figure 9 The following is a graph showing the thickness variation of the vapor-deposited film layer according to an embodiment of the present invention, such as... Figure 9 As shown, the thickness of the vapor-deposited film gradually decreases as the distance from the center of the rotating circumference of the vapor-deposited substrate gradually increases.

[0134] Reference Figure 10 , Figure 10This diagram illustrates an embodiment of the invention where the orthographic projection of the evaporation point source on the evaporation substrate is located outside the circumferential surface of the evaporation substrate. Figure 10 As shown, in this case, all areas on the vapor deposition substrate are located between the orthographic projection point O of the vapor deposition point source on the vapor deposition substrate and the center O' of the rotating circumferential surface of the vapor deposition substrate. Then, for any point C on the substrate, the thickness T5 of the vapor deposition film layer deposited after rotation ts satisfies the following formula (12):

[0135]

[0136] Where n is the straight-line distance between point O and point O', q is the straight-line distance between the intersection points of the rotating circumferential surface of point O and point C and the x-axis that are closest to point O, x is the abscissa of point C, m is the straight-line distance from the vapor deposition point source to the edge of the rotating circumferential surface of the vapor deposition substrate, and h is the vertical distance between the vapor deposition substrate and the vapor deposition point source.

[0137] Reference Figure 11 , Figure 11 The following diagram illustrates example images of the vapor-deposited film thickness at point C under different q values ​​according to embodiments of the present invention. Figure 11 As shown, assuming h is 8, n is 4, and R is 2, the thickness of the vapor-deposited film increases as the value of q increases from 2 to 4.

[0138] Reference Figure 12 , Figure 12 The following is a graph showing the thickness variation of the vapor-deposited film layer according to an embodiment of the present invention, such as... Figure 12 As shown, the thickness of the vapor-deposited film gradually decreases as the distance from the center of the rotating circumference of the vapor-deposited substrate gradually increases.

[0139] After determining the thickness of the vapor-deposited film layer in each region of the vapor-deposited substrate, the width of each region of the fan-shaped shielding plate is determined based on the difference between the thickness of the vapor-deposited film layer in each region and the thickness of the film layer at the thinnest point at the edge.

[0140] Taking the thinnest point at the edge as a reference, the difference between the thickness of the vapor-deposited film in each region and the thickness of the film at the thinnest point at the edge is calculated. Then, at any radius of the rotating circumference of the vapor-deposited substrate, the difference between the thickness of the film at each point and the thickness of the film at the thinnest point at the edge satisfies the following formula (13):

[0141] ΔT=TT Least (13)

[0142] Assuming the width of the sector-shaped baffle corresponding to the thinnest point on the circumferential edge of the vapor-deposited substrate is w, then the width of the sector-shaped baffle corresponding to any point C on the vapor-deposited substrate satisfies the following formula (14):

[0143]

[0144] Where r is the distance from point C to the center of the rotating circumference of the vapor deposition substrate, and T is the thickness of the vapor deposition film after point C has rotated one revolution.

[0145] In one optional embodiment, the shield is a hollow shield, and the thickness of the shield is 1mm to 5mm.

[0146] The fan-shaped baffle can be hollow and has a thickness of 1mm to 5mm.

[0147] In this embodiment of the invention, the fan-shaped baffle is made hollow to reduce the weight of the baffle.

[0148] In one alternative embodiment, the shield is disposed in the area between a first line and a second line with the vapor deposition point source as the endpoint;

[0149] Wherein, the first connecting line is the line connecting the vapor deposition point source and the center of the rotating circumferential surface where the vapor deposition substrate is located, and the second connecting line is the line connecting the vapor deposition point source and the edge of the rotating circumferential surface where the vapor deposition substrate is located.

[0150] In one alternative embodiment, the size of the shielding plate is positively correlated with the vertical distance from the shielding plate to the vapor deposition point source;

[0151] The dimensions of the shielding plate include its radius and multiple chord widths, where the chord length is the length of the line connecting two points on each side of the shielding plate that are equidistant from the vertex.

[0152] Reference Figure 13 , Figure 13 A schematic diagram of the baffle position setting according to an embodiment of the present invention is shown, such as... Figure 13 As shown, in practical applications, the shielding plate is disposed between the evaporation point source and the evaporation substrate, with a gap between the shielding plate and the evaporation point source, and a gap between the shielding plate and the evaporation substrate.

[0153] The width of the sector-shaped shielding plate calculated based on formula (14) is the width of the sector-shaped shielding plate when the interval between the sector-shaped shielding plate and the vapor deposition substrate is within the preset interval threshold. At this time, the radius length of the sector-shaped shielding plate is the same as the radius length of the rotating circumference of the vapor deposition substrate.

[0154] The preset interval threshold indicates that the size of the fan-shaped baffle does not need to be changed within the threshold to meet production requirements. If the preset interval threshold is exceeded, the fan-shaped baffle needs to be reduced in size by a certain ratio to meet production requirements.

[0155] When reducing the size of the fan-shaped baffle, the length and width of the fan-shaped baffle are reduced simultaneously according to a certain ratio.

[0156] The length of a sector-shaped baffle refers to its radius; the width of a sector-shaped baffle refers to the length of multiple chords formed by connecting two points on its two sides that are equidistant from the vertex.

[0157] Within a fixed vapor deposition chamber, the size of the baffle plate is positively correlated with the vertical distance between the baffle plate and the vapor deposition point source.

[0158] In other words, the smaller the vertical distance between the shielding plate and the vapor deposition point source, the smaller the size of the shielding plate.

[0159] When calculating the scaling ratio of the shield, the ratio between the first distance and the second distance is first calculated, and the size of the shield is reduced based on this ratio.

[0160] The first distance is the vertical distance between the shielding plate and the vapor deposition point source, and the second distance is the vertical distance between the vapor deposition substrate and the vapor deposition point source.

[0161] For example, assuming the first distance is L1 and the second distance is h, the ratio between the first distance and the second distance is L1 / h. Then, the length and width of the shield calculated based on formula (14) are reduced according to L1 / h.

[0162] Assuming the first distance is L2 and the second distance is h, the ratio between the first distance and the second distance is L2 / h. Then, the length and width of the shield calculated based on formula (14) are reduced according to L2 / h.

[0163] Reference Figure 14 , Figure 14 A schematic diagram of the fan-shaped baffle structure according to an embodiment of the present invention is shown, as follows: Figure 14 As shown, assuming a point source evaporation chamber with h=10, n=2, and R=3, the geometric shape of the fan-shaped baffle is as follows: Figure 14 As shown.

[0164] The embodiments of the present invention improve the applicability and flexibility of the shielding plate in various evaporation conditions by adjusting the size of the shielding plate based on the vertical distance between the shielding plate and the evaporation point source.

[0165] In an optional embodiment, the film thickness control device further includes

[0166] Evaporation tray;

[0167] The vapor deposition substrate is located on the side of the vapor deposition tray facing the vapor deposition point source;

[0168] The vapor deposition tray is connected to the rotating mechanism so that it rotates under the drive of the rotating mechanism.

[0169] When the vapor deposition substrate is small in size, it needs to be placed in a vapor deposition tray for vapor deposition, with the vapor deposition substrate located on the side of the vapor deposition tray facing the vapor deposition point source.

[0170] The vapor deposition tray is connected to the rotating mechanism. During the vapor deposition process, the vapor deposition tray rotates at a certain speed under the drive of the rotating mechanism.

[0171] In one alternative embodiment, the vapor deposition tray includes a plurality of receiving slots, each of the receiving slots being used to accommodate one of the vapor deposition substrates;

[0172] The width of the shielding plate is negatively correlated with the thickness of the vapor-deposited film layer at its orthogonal projection on the vapor deposition tray. The width of the shielding plate is a plurality of chord lengths formed by the lines connecting two points on the two sides that are equidistant from the vertex.

[0173] The vapor deposition tray contains multiple receiving slots, in which smaller vapor deposition substrates are placed, with each receiving slot corresponding to one vapor deposition substrate.

[0174] The vapor deposition tray is located at the top of the vapor deposition chamber, and the vapor deposition point source is located at the bottom of the vapor deposition chamber.

[0175] The baffle is positioned between the vapor deposition tray and the vapor deposition point source, with a gap between them.

[0176] The baffle is a fan-shaped baffle, and the width of each region is negatively correlated with the thickness of the vapor-deposited film at its orthogonal projection onto the vapor deposition tray. That is, the thicker the vapor-deposited film at the orthogonal projection of any region of the fan-shaped baffle onto the vapor deposition tray, the smaller the width of the baffle at that location.

[0177] The width of a sector-shaped baffle refers to the length of multiple chords formed by connecting two points on each side that are equidistant from the vertex.

[0178] The embodiments of the present invention effectively improve the film thickness difference between the vapor deposition substrates located at the center and edge of the vapor deposition tray by setting a shielding plate between the vapor deposition tray and the vapor deposition point source, so that the multiple vapor deposition substrates placed in the vapor deposition tray have similar performance and improve utilization.

[0179] The application of the film thickness control device provided by the present invention will be described in detail below with an example.

[0180] First, based on the relative position between the vapor deposition substrate and the vapor deposition point source inside the vapor deposition chamber, the width of each area of ​​the fan-shaped baffle is calculated using a formula. Then, based on the vertical distance between the fan-shaped baffle and the vapor deposition point source, the radius and width of the fan-shaped baffle are adjusted.

[0181] Hollow fan-shaped baffles are prepared according to these width values, and the thickness is taken as any value between 1mm and 5mm based on actual application requirements.

[0182] The prepared fan-shaped baffle is placed at the target height position between the vapor deposition substrate and the vapor deposition point source, and the baffle is connected to the rotating shaft.

[0183] There are multiple evaporation point sources in the evaporation chamber, which are evenly distributed in a circular pattern at the bottom of the evaporation chamber.

[0184] During the vapor deposition process on the substrate, the vapor deposition point source sequentially heats and evaporates various vapor deposition materials, causing them to vaporize. Driven by the rotating shaft, the shielding plates rotate sequentially to position themselves directly above the vapor deposition point source, blocking the ejected vapor deposition material particles. Because more material is blocked near the center of the rotating circumference of the substrate, and less is blocked further away, the amount of vapor deposition material particles deposited in all areas of the substrate is the same, resulting in a vapor deposition film layer of uniform thickness.

[0185] While the embodiments disclosed in this invention are as described above, the content is merely for the purpose of facilitating understanding of the invention and is not intended to limit the invention. Any person skilled in the art may make any modifications and changes to the form and details of the implementation without departing from the spirit and scope disclosed in this invention; however, the scope of patent protection of this invention shall still be determined by the scope defined in the appended claims.

[0186] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0187] Those skilled in the art will understand that embodiments of this disclosure can be provided as methods, apparatus, or computer program products. Therefore, embodiments of this disclosure can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, embodiments of this disclosure can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0188] This disclosure describes embodiments of methods, terminal devices (systems), and computer program products according to embodiments of this disclosure with reference to flowchart illustrations and / or block diagrams. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, generate instructions for implementing the flowchart illustrations. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0189] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing terminal device to operate in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0190] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal equipment, causing a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable terminal equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0191] While preferred embodiments of the present disclosure have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the present disclosure.

[0192] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0193] The above provides a detailed description of a film thickness control device provided by this disclosure. Specific examples have been used to illustrate the principles and implementation methods of this disclosure. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this disclosure. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this disclosure. Therefore, the content of this specification should not be construed as a limitation of this disclosure.

Claims

1. A film thickness control device, characterized in that, The device includes: Evaporated substrate; At least one vapor deposition point source is used to heat and evaporate the vapor deposition material so that the vaporized vapor deposition material particles form a vapor deposition film layer on the side of the vapor deposition substrate facing the vapor deposition point source. A shielding plate is disposed between the vapor deposition substrate and the vapor deposition point source; wherein, there is a gap between the shielding plate and the vapor deposition substrate, the orthographic projection of the shielding plate on the vapor deposition substrate is located inside the vapor deposition substrate, and covers the orthographic projection of the vapor deposition point source on the vapor deposition substrate; the width of the shielding plate gradually increases from a position away from the center of the vapor deposition substrate to a position at the center of the rotation axis of the vapor deposition substrate. A rotating mechanism is connected to the vapor deposition substrate and is used to drive the vapor deposition substrate to rotate. During the rotation of the vapor deposition substrate, the shielding plate blocks vapor deposition material particles near the vapor deposition point source from forming on the shielding plate, so as to form a vapor deposition film layer with uniform film thickness on the vapor deposition substrate. The vapor deposition substrate and the shielding plate are coaxial but rotate at different speeds.

2. The apparatus according to claim 1, characterized in that, The shield is a fan-shaped shield; The width of the fan-shaped shielding plate and the thickness of the vapor-deposited film layer at the orthogonal projection of the fan-shaped shielding plate on the vapor-deposited substrate are negatively correlated. The width of the fan-shaped shielding plate is a plurality of chord lengths formed by the lines connecting two points on the two sides that are equidistant from the vertex.

3. The apparatus according to claim 1, characterized in that, The vapor deposition substrate and the at least one vapor deposition point source are located in the vapor deposition chamber. When there are multiple vapor deposition point sources, the multiple vapor deposition point sources are evenly distributed at the bottom of the vapor deposition chamber. The shielding plate is connected to the rotating mechanism and rotates with the rotating mechanism so that the shielding plate rotates sequentially to be directly above the multiple vapor deposition point sources, so as to sequentially shield the vapor deposition material particles evaporated by the vapor deposition point sources.

4. The apparatus according to claim 1, characterized in that, When there is only one vapor deposition point source, the orthographic projection of the vapor deposition point source on the vapor deposition substrate is located at the center of the rotating circumferential surface where the vapor deposition substrate is located, or is off-center; the rotating circumferential surface is the circular trajectory of the vapor deposition substrate as it rotates.

5. The apparatus according to claim 3 or 4, characterized in that, The shielding plate is disposed in the area between the first line and the second line with the vapor deposition point source as the endpoint; Wherein, the first connecting line is the line connecting the vapor deposition point source and the center of the rotating circumferential surface where the vapor deposition substrate is located, and the second connecting line is the line connecting the vapor deposition point source and the edge of the rotating circumferential surface where the vapor deposition substrate is located.

6. The apparatus according to claim 1, characterized in that, The size of the shielding plate and the vertical distance from the shielding plate to the vapor deposition point source are positively correlated. The dimensions of the shielding plate include its radius and multiple chord widths, where the chord length is the length of the line connecting two points on each side of the shielding plate that are equidistant from the vertex.

7. The apparatus according to claim 1, characterized in that, The shield is a hollow shield, and the thickness of the shield is 1mm to 5mm.

8. The apparatus according to claim 1, characterized in that, The device also includes Evaporation tray; The vapor deposition substrate is located on the side of the vapor deposition tray facing the vapor deposition point source; The vapor deposition tray is connected to the rotating mechanism so that it rotates under the drive of the rotating mechanism.

9. The apparatus according to claim 8, characterized in that, The vapor deposition tray includes a plurality of receiving slots, each of the receiving slots being used to accommodate one of the vapor deposition substrates; The width of the shielding plate is negatively correlated with the thickness of the vapor-deposited film layer at its orthogonal projection on the vapor deposition tray. The width of the shielding plate is a plurality of chord lengths formed by the lines connecting two points on the two sides that are equidistant from the vertex.

10. The apparatus according to claim 1, characterized in that, The vapor-deposited substrate is a glass substrate containing electrodes.

Images